Heating shields for physical vapor deposition chambers

Abstract

Embodiments of process shields for use in process chambers are provided herein. In some embodiments, a process shield for use in a process chamber includes a body having a cylindrical shape, wherein the body includes an upper portion and a lower portion, the upper portion having an outer lip and the lower portion extending downwardly and radially inwardly from the upper portion, wherein the outer lip includes a plurality of openings for receiving fasteners, a plurality of alignment slots extending radially inwardly from an outer surface of the outer lip, and a notched lower peripheral edge, and wherein the lower surface of the outer lip includes a plurality of grooves.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to substrate processing facilities. Background Art

[0002] Physical vapor deposition (PVD) is a process that can be used to deposit thin films onto substrates. A PVD process generally involves bombarding a target comprising a source material with ions from a plasma, causing the source material to be sputtered from the target. The sputtered source material is then accelerated toward the substrate to be processed, resulting in the deposition of the source material with or without reaction with other reactants. The source material is deposited in a PVD chamber, accompanied by coating the interior surfaces of the PVD chamber.

[0003] A process kit that may include multiple components may be provided to reduce or prevent unwanted deposition on the inner surface of the PVD chamber. However, deposits that accumulate on the process kit may require cleaning or replacement. Maintenance of the process kit typically includes removing the process kit from the PVD chamber, chemically etching the process kit, and reinstalling the process kit into the PVD chamber. The inventors suggest performing the chemical etching process in situ. However, for some in-situ cleaning processes, high chamber temperatures may be required.

[0004] Accordingly, the inventors herein provide improved process kits for high chamber temperature processing. Summary of the invention

[0005] Embodiments of process shields for use in process chambers are provided herein. In some embodiments, a process shield for use in a process chamber includes a body having a cylindrical shape, wherein the body includes an upper portion and a lower portion, the upper portion having an outer lip and the lower portion extending downwardly and radially inwardly from the upper portion, wherein the outer lip includes a plurality of openings for receiving fasteners, a plurality of alignment slots extending radially inwardly from an outer surface of the outer lip, and a notched lower peripheral edge, and wherein the lower surface of the outer lip includes a plurality of grooves.

[0006] In some embodiments, a process kit for use in a process chamber includes: a process shield, the process shield having a cylindrical body, the cylindrical body having an upper portion and a lower portion, the upper portion having an outer lip and the lower portion extending downwardly and radially inwardly from the upper portion, wherein a plurality of alignment slots extend radially inwardly from an outer surface of the outer lip; and a heater ring, the heater ring coupled to the upper portion of the process shield via a plurality of openings in the outer lip, wherein the heater ring includes a resistive heating element embedded in the heater ring, and wherein the heater ring includes a plurality of pin slots corresponding to positions of the plurality of alignment slots of the process shield.

[0007] In some embodiments, a processing chamber includes: a chamber body defining an interior volume in the chamber body; a target disposed in the interior volume near a top of the chamber body; a substrate support disposed in the interior volume relative to the target; a shield having a cylindrical body extending from the target to the substrate support, the shield having an outer lip; an adapter surrounding the shield, the adapter having cooling channels disposed in the adapter; and a heater ring secured to the outer lip of the shield via a plurality of openings in the outer lip to sandwich the adapter between the outer lip and the heater ring.

[0008] Other and further embodiments of the disclosure are described below. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Embodiments of the present disclosure, briefly summarized above and discussed in more detail below, may be understood by reference to the illustrative embodiments of the disclosure depicted in the accompanying drawings. However, the drawings illustrate only typical embodiments of the disclosure and are therefore not to be considered limiting of the scope of the invention, as the disclosure may admit to other equally effective embodiments.

[0010] Figure 1 is a schematic side view of a processing chamber according to some embodiments of the present disclosure.

[0011] Figure 2 is a partial cross-sectional isometric view of a processing chamber according to some embodiments of the present disclosure.

[0012] Figure 3 is a partial cross-sectional isometric view of a processing chamber according to some embodiments of the present disclosure.

[0013] Figure 4 is a partial cross-sectional isometric view of a processing chamber according to some embodiments of the present disclosure.

[0014] Figure 5 is a top isometric view of a heater ring according to some embodiments of the present disclosure.

[0015] Figure 6 is a partial top view of a process shield according to some embodiments of the present disclosure.

[0016] Figure 7 is a partial top view of a process shield according to some embodiments of the present disclosure.

[0017] Figure 8 is a partial bottom view of a process shield according to some embodiments of the present disclosure.

[0018] Fig. 9 is a cross-sectional side view of a process shield according to some embodiments of the present disclosure.

[0019] For ease of understanding, the same reference numerals are used as much as possible to designate the same elements common to the figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated into other embodiments without further description. DETAILED DESCRIPTION

[0020] Embodiments of a process kit for a PVD chamber are provided herein. As described herein, the process kit may include a plurality of components, including a process shield. In some embodiments, the process shield is advantageously thermally separated from an adjacent cooling component of the process chamber (e.g., a water-cooled adapter or a water-cooled sidewall of the process chamber) so that the process shield can be heated to a high temperature (e.g., a temperature of 250 degrees Celsius or more). In some embodiments, the process shield is advantageously electrically coupled to a cooling adapter or a cooling sidewall of the process chamber to electrically ground the process shield.

[0021] Figure 1 A schematic side view of a processing chamber 100 according to some embodiments of the present disclosure is depicted. In some embodiments, the processing chamber 100 is a physical vapor deposition (PVD) chamber. Examples of PVD chambers suitable for use with the present disclosure include APPLIED ENDURA IMPULSE TM and other PVD processing chambers commercially available from Applied Materials, Inc. of Santa Clara, Calif. Other processing chambers from Applied Materials, Inc. or other manufacturers may also benefit from the inventive apparatus disclosed herein.

[0022] The processing chamber 100 includes chamber walls 106 that enclose an inner volume having a processing volume 108 and a non-processing volume 109. The chamber walls 106 include sidewalls 116, a bottom wall 126, and a ceiling 124. The ceiling 124 may be a chamber lid or similar cover to seal the inner volume. The processing chamber 100 may be a stand-alone chamber or part of a multi-chamber platform (not shown), such as any processing system having a cluster of internally connected chambers connected by a substrate transfer mechanism. or The processing chamber 100 may be a PVD chamber capable of sputtering a material onto the substrate 104. Non-limiting examples of suitable materials for sputtering deposition include one or more of the following: aluminum, copper, tantalum, tantalum nitride, titanium, titanium nitride, tungsten, tungsten nitride, and the like.

[0023] The processing chamber 100 includes a substrate support 130, which includes a pedestal 134 that supports a substrate 104. The pedestal 134 has a substrate supporting surface 138, which has a plane that is substantially parallel to a sputtering surface 139 of a target 140 disposed in an upper section of the processing chamber 100. The target 140 may include a material to be sputtered onto the substrate 104 and the backing plate. The substrate supporting surface 138 of the pedestal 134 is configured to receive and support the substrate 104 during processing. The pedestal 134 may include an electrostatic chuck having an electrode 118 or a heater (e.g., a resistive heater, a heat exchanger, or other suitable heating device). The electrode 118 may be coupled to an electrode power source 170a. The electrode power source 170a may be a DC power source or an RF power source. In operation, the substrate 104 is introduced into the non-processing volume 109 of the processing chamber 100 through a slit valve 142 in the sidewall 116 of the processing chamber 100, and the substrate 104 is placed on the substrate support 130 in a non-processing position during loading of the substrate 104. The substrate support 130 may be raised or lowered by a support lift mechanism, and during placement of the substrate 104 on the substrate support 130 by a robot, a lift finger assembly may be used to raise and lower the substrate 104 onto the substrate support 130. The pedestal 134 may be maintained at an electrically floating potential or grounded during plasma operation.

[0024] The processing chamber 100 also contains a process kit 150, which includes various components that can be easily removed from the processing chamber 100, for example, to clean sputtering deposits off the surface of the components, replace or repair corroded components, or adapt the processing chamber 100 for other processes. The process kit 150 includes a process shield 152. The process shield 152 has a diameter that is sized to surround the sputtering surface 139 of the target 140 and the substrate support 130 (e.g., a diameter that is larger than the sputtering surface 139 and larger than the support surface of the substrate support 130). The process shield 152 can be made of aluminum, an aluminum alloy, titanium, a titanium alloy, stainless steel, or a ceramic.

[0025] The DC power source 190 may apply a bias voltage to the target 140 relative to the process shield 152 of the process kit 150, which bias voltage may be electrically floating during the sputtering process and / or the cleaning process. The process kit 150 may include a heater ring 132 coupled to the process shield 152 to heat the process shield 152 to a suitable temperature to perform the sputtering process or the cleaning process. In some embodiments, the process kit 150 includes an adapter 120 surrounding the process shield 152. In some embodiments, the process shield 152 and the heater ring 132 are coupled so that they sandwich the adapter 120 or a portion of the sidewall 116 between the process shield 152 and the heater ring 132 (described in further detail below). In some embodiments, the adapter 120 includes a cooling channel 232 disposed in the adapter 120. The cooling channel 232 is configured to facilitate the flow of a coolant therethrough to cool the adapter. In some embodiments, the adapter is cooled to a temperature of about 20 degrees Celsius to about 50 degrees Celsius.

[0026] In some embodiments, the process mask 152 includes a plurality of grooves (see Figure 8 ) to accommodate a spring member 176, such as an RF gasket, disposed between the process shield 152 and the adapter 120. The spring member 176 is configured to electrically couple the process shield 152 and the adapter 120. In some embodiments, the process shield 152 includes a plurality of grooves 602 (see Figure 6 and Figure 7 ) to accommodate a spring member 174, such as an RF gasket, disposed between the process shield 152 and the insulator ring 114. The insulator ring 114 is configured to electrically isolate the target 140 from the process shield 152. The spring member 174 advantageously maintains a uniform gap between the process shield 152 and the target 140.

[0027] In some embodiments, the heater ring 132 includes copper or a copper alloy. The heater 136 may include a heating element, such as a resistive heating element, embedded within or otherwise coupled to the heater ring 132. In some embodiments, a suitable temperature for performing the cleaning process is about 250 degrees Celsius to about 350 degrees Celsius. The DC power source 190 or the second DC power source 190a may also be used to apply a bias voltage to the heater 136 of the heater ring 132 (e.g., when performing a cleaning process of the process shield 152).

[0028] In some embodiments, the process kit 150 further includes a deposition ring 154 disposed on the pedestal 134 and between the process shield 152 and the substrate support 130. The deposition ring 154 and the process shield 152 define a tortuous gas flow path therebetween and cooperate to reduce the formation of sputtering deposits on the peripheral walls of the substrate support 130 and the extended edge 153 of the substrate 104.

[0029] In some embodiments, the process kit 150 includes a reflective liner 148 to protect the interior surfaces of the process chamber 100 from unwanted sputtering deposition and to reduce heat loss by reflecting heat from the heater ring 132 back to the process shield 152. In some embodiments, the reflective liner 148 is coupled to at least one of the heater ring 132 and the adapter 120. In some embodiments, the reflective liner 148 has an "L"-shaped or "C"-shaped cross-section.

[0030] In some embodiments, the process kit 150 includes a ground support 146 coupled to the substrate support 130. In some embodiments, the ground support is coupled to a ground return 156. The ground return 156 is configured to contact a bottom surface of the process shield 152 and electrically ground the process shield 152 when the substrate support 130 is in the raised position, and to be spaced apart from the process shield 152 when the substrate support 130 is in the lowered position.

[0031] The processing chamber 100 is coupled to a gas delivery system 160 having a gas source 161, and the gas delivery system 160 is configured to supply a processing gas to the processing volume 108. In some embodiments, the processing gas from the gas source 161 flows through a conduit 163 to the processing kit 150, and flows through the processing kit 150 into the processing volume 108 (hereinafter referred to as Figure 2 108). In some embodiments, the process kit 150 includes at least one gas delivery channel 128. In some embodiments, the at least one gas delivery channel 128 includes two diametrically opposed gas delivery channels to provide more uniform gas delivery. In some embodiments, the at least one gas delivery channel 128 extends from the outer surface of the adapter 120 to the inner surface of the adapter 120. In some embodiments, the at least one gas delivery channel 128 extends downwardly and radially inwardly from the outer surface of the adapter 120 to the inner surface of the adapter 120. The inventors have discovered that by incorporating the gas supply into the process kit 150, the throughput can be advantageously increased because the processing volume 108 receives the processing gas, thereby reducing the time to provide the processing gas to the processing volume 108. In some embodiments, the processing gas from the gas source 161 flows through the sidewall 116 via the conduit 165, then flows to the non-processing volume 109, and then flows to the processing volume 108. The conduit 163 and the conduit 165 may include gas flow control valves (not shown) (e.g., mass flow controllers) to allow a set flow rate of the processing gas to pass therethrough.

[0032] The process gas may include a non-reactive gas, such as argon or xenon, capable of energetically striking and sputtering material from the target 140 onto the substrate 104. The process gas may include a reactive gas, such as one or more of an oxygen-containing gas and a nitrogen-containing gas that may react with the sputtered material to form a layer on the substrate 104. The gas is then energized by the RF power source 170 to form or generate a plasma to sputter the target 140. For example, the process gas is ionized by energetic electrons and the ionized gas is attracted to the sputtered material, which is biased to a negative voltage. In some embodiments, the reactive gas may react directly with the target 140 to produce a compound that is then sputtered from the target 140. In the embodiment, the target 140 may be energized by both the DC power source 190 and the RF power source 170. In some embodiments, the DC power source 190 may be configured to provide pulsed DC to power the target 140.

[0033] For cleaning processes around the process kit 150, the process gas may include oxygen or other oxygen-containing gases, including, for example, ozone, hydroxides, or peroxides. In some embodiments, the process gas may include chlorine, diatomic chlorine, or other chlorine-containing gases. The type of gas used may depend on, for example, the type of target material, the type of chamber (e.g., PVD, CVD, etc.), the manufacturer's preference, etc.

[0034] In some embodiments, the frequency range of the RF energy supplied by the RF power source 170 may be from about 2 MHz to about 60 MHz, or, for example, non-limiting frequencies, such as 2 MHz, 13.56 MHz, 27.12 MHz, or 60 MHz may be used. In some embodiments, multiple RF power sources (i.e., two or more) may be provided to provide RF energy in multiple of the above frequencies. Additional RF power sources may also be used to supply bias voltages to the pedestal 134 and / or the processing shield 152 (e.g., when performing a cleaning process of the area around the processing kit 150). For example, in some embodiments, additional RF power sources 170a may be used to energize the electrode 118. The electrode 118 may be used to supply power to the processing shield 152 and / or the pedestal 134. In addition, in some embodiments, the RF power source 170 may be configured to energize the electrode 118. One or more additional components (e.g., a switching circuit) may be provided to switch the electrical path from the lid or ceiling 124 to the electrode 118.

[0035] The spent process gas and byproducts are exhausted from the process chamber 100 via an exhaust pump 162. The exhaust pump 162 receives the spent process gas via an exhaust conduit 168 having a throttle valve (not shown) to control the pressure of the gas in the process chamber 100. The exhaust conduit 168 is connected to the exhaust pump 162 including one or more pumps (one is shown).

[0036] In some embodiments, the processing chamber 100 may include a magnetic field generator 164 disposed above the target 140 to form a magnetic field around the target 140 to improve sputtering of the target 140. Capacitively generated plasma may be enhanced by the magnetic field generator 164, in which, for example, a permanent magnet or an electromagnetic coil may provide a magnetic field in the processing chamber 100, the magnetic field having a rotating magnetic field having a rotation axis orthogonal to the plane of the substrate 104. The processing chamber 100 may additionally or alternatively include a magnetic field generator 164 to generate a magnetic field near the target 140 of the processing chamber 100 to increase the ion density in a high-density plasma region adjacent to the target 140 to improve sputtering of the target material.

[0037] The various components of the processing chamber 100 may be controlled by a controller 180. The controller 180 includes program code having a set of instructions for operating the components to process the substrate 104. For example, the controller 180 may include program code including: a substrate placement instruction set to operate the substrate support 130 and the substrate transport mechanism; power control of the microwave power source 181 configured to generate a plasma in the processing volume 108 of the processing chamber 100 when cleaning of the area around the process kit 150 is required; a gas flow control instruction set to operate a gas flow control valve to set the flow of sputtering gas to the processing chamber 100; a gas pressure control instruction set to operate to maintain the pressure in the processing chamber 100; temperature control of one or more heating components of the heater 136; a cleaning process instruction set for the area around the process kit 150; a gas energizer control instruction set to operate the RF power source 170 to set the gas energization power level; a temperature control instruction set to control the temperature control system or heat transfer medium supply in the substrate support 130 to control the flow rate of the heat transfer medium to the one or more annular heat transfer channels; and a process monitoring instruction set to monitor the process in the processing chamber 100. Various components of the processing chamber 100 may be controlled by the controller 180.

[0038] Figure 22 is a partial cross-sectional isometric view of a processing chamber according to some embodiments of the present disclosure. In some embodiments, the processing shield 152 includes a body 202 having a cylindrical shape. The body includes an upper portion 206 and a lower portion 204. In some embodiments, the processing shield 152 includes a plurality of vents 252 to increase the flow conductance through the processing shield 152. In some embodiments, the plurality of vents 252 are arranged around the processing shield 152. In some embodiments, the plurality of vents 252 are arranged around the processing shield 152 at regular intervals. In some embodiments, the plurality of vents 252 are arranged around the processing shield 152 in an axisymmetric pattern relative to a central axis extending along a central opening of the processing shield 152. In some embodiments, each vent of the plurality of vents 252 is a circular, elliptical, or other shaped opening. The lower portion 204 extends downwardly and radially inwardly from the upper portion 206. The surface of the upper portion 206 facing the processing volume is continuous with the surface of the lower portion 204 facing the processing volume. In some embodiments, the outer surface 240 of the lower portion 204 is substantially vertical from the bottom of the upper portion 206 to the bottom of the process shield 152. In some embodiments, the outer surface 240 is disposed generally radially outwardly on the surface of the upper portion 206 that faces the process volume.

[0039] In some embodiments, the upper surface 208 of the lower portion 204 is substantially horizontal. In some embodiments, the upper surface 208 is substantially coplanar with adjacent portions of the upper surface 212 of the deposition ring 154. In some embodiments, the lower portion 204 includes an inner lip 230 extending radially inward from the body of the lower portion 204. In some embodiments, a first leg 236 extends downwardly from an innermost portion of the inner lip 230. In some embodiments, the first leg 236 extends to a position between the upper surface 208 and the lower surface of the lower portion 204. The inner surface of the first leg 236 defines the innermost surface of the lower portion 204.

[0040] In some embodiments, the deposition ring 154 includes an inner portion 218 disposed on the pedestal 134. In some embodiments, an upper surface of the inner portion 218 defines an upper surface 212 of the deposition ring 154. In some embodiments, a first leg 222 of the deposition ring 154 extends downwardly from the inner portion 218. In some embodiments, the deposition ring 154 includes an outer portion 224 extending radially inwardly from the first leg 222. In some embodiments, a second leg 226 of the deposition ring 154 extends upwardly from the outer portion 224. In some embodiments, the first leg 222, the outer portion 224, and the second leg 226 are disposed about the first leg 236 of the process shield 152 to define a tortuous gas flow path therebetween.

[0041] In some embodiments, the upper portion 206 includes an outer lip 214. The outer lip 214 includes a plurality of openings 216 to receive fasteners 220 for fastening the heater ring 132 to the process shield 152. Figure 6 and Figure 7 is a partial top view of a process shield 152 according to some embodiments of the present disclosure. In some embodiments, each of the plurality of openings 216 includes a counterbore 606 to accommodate one of the fasteners 220. In some embodiments, as Figure 6 As shown in FIG. 1 , the counterbore 606 has a substantially circular shape. In some embodiments, each of the plurality of openings 216 includes a counterbore 708 to accommodate one of the fasteners 220. In some embodiments, as shown in FIG. Figure 7 , the counterbore 708 has a substantially elliptical or elongated circular shape. In some embodiments, the outer lip 214 of the process shield 152 includes a plurality of radial gas distribution channels 604 extending from the plurality of openings 216 to the outer surface 610 of the outer lip 214 .

[0042] In some embodiments, the upper surface 612 of the outer lip 214 includes a plurality of grooves 602 to accommodate the spring members 174. In some embodiments, the plurality of grooves 602 are disposed at regular intervals around the process shield 152. The spring members 174, when disposed in the plurality of grooves 602, extend beyond the upper surface 612 of the outer lip 214 to maintain a desired gap between the process shield 152 and the target 140. In some embodiments, each of the plurality of grooves 602 extends between adjacent openings of the plurality of openings 216. In some embodiments, each of the plurality of grooves 602 extends from a sidewall of an adjacent counterbore 606, 708.

[0043] Figure 8 8 is a partial bottom view of a process shield according to some embodiments of the present disclosure. In some embodiments, the lower surface 802 of the outer lip 214 includes a plurality of grooves 804 to accommodate the spring members 176. In some embodiments, the plurality of grooves 804 are arranged at regular intervals around the process shield 152. In some embodiments, the plurality of grooves 804 on the lower surface 802 of the outer lip 214 extend a shorter length than the plurality of grooves 602 on the upper surface 612 of the outer lip 214. For example, the spring member 174 may have a length of about 1.5 inches to 3.5 inches. For example, the spring member 176 may have a length of about 0.5 inches to about 1.5 inches. The plurality of grooves 804 are configured to accommodate the spring members 176 to maintain electrical coupling between the process shield 152 and another chamber component (e.g., the adapter 120 or the sidewall 116).

[0044] return Figure 2In some embodiments, an insert 238 is disposed in each of the plurality of openings 216 between each of the fasteners 220 and the process shield 152 (e.g., in the counterbore 606 or the counterbore 708) to increase the contact area between the process shield and the fastener 220. The increased contact area advantageously reduces deformation of the process shield 152 and reduces loosening of the fastener 220. Similarly, the counterbore 708 can accommodate the insert 238 having a larger contact area with the process shield 152 than the counterbore 606. In some embodiments, the insert 238 includes at least one of a tapered washer and a flat washer. In some embodiments, the shape of the insert 238 is similar to the counterbore 708.

[0045] In some embodiments, the outer lip 214 includes a notched lower peripheral edge to accommodate the adapter 120. In some embodiments, the inner lip 246 of the adapter 120 is advantageously sandwiched between the outer lip 214 and the heater ring 132 via the fastener 220. In some embodiments, the outer lip 214 includes a notched upper peripheral edge to accommodate the insulator ring 114.

[0046] The process kit 150 defines a gas flow path through the process kit 150. In some embodiments, the gas flow path extends from an area between the adapter 120 and the process shield 152, through the plurality of radial gas distribution channels 604, through a first gap 254 between the insulator ring 114 and the process shield 152, and through a second gap 250 between the target 140 and the process shield 152 to an area within the cylindrical body of the process shield 152. The first gap 254 and the second gap are sized to accommodate thermal expansion of the process shield 152 when the process shield 152 is heated without contacting the target 140 or the insulator ring 114.

[0047] Figure 32 is a partial cross-sectional isometric view of a process chamber according to some embodiments of the present disclosure. In some embodiments, the inner lip 246 of the adapter 120 includes a plurality of alignment pins 302 to align the process shield 152 to the adapter 120. Each of the plurality of alignment pins 302 extends into an alignment slot 304 of the process shield 152 to align the process shield 152 to the adapter 120. In some embodiments, the process shield 152 is seated on a shoulder 308 of each of the alignment pins 302. The alignment pins 302 are configured to provide a gap between the inner lip 246 of the adapter 120 and the outer lip 214 of the process shield 152 to reduce or prevent thermal coupling between the adapter 120 and the process shield 152. The thermal decoupling of the adapter 120 and the process shield 152 advantageously facilitates heating the process shield 152 to a temperature greater than 250 degrees Celsius while the adapter 120 has a temperature of about 20 degrees Celsius to about 50 degrees Celsius. In some embodiments, the alignment pins 302 include three pins spaced approximately 120 degrees apart from one another. In some embodiments, the alignment pins 302 provide a gap of approximately 0.005 inches to approximately 0.02 inches between the upper surface of the inner lip 246 of the adapter 120 and the lower surface of the outer lip 214 of the process shield 152.

[0048] In some embodiments, the heater ring 132 includes a cooling channel 314 for circulating a coolant through the cooling channel 314 to provide increased temperature control of the heater ring 132 and the process shield 152. In some embodiments, the upper surface of the sidewall 116 includes an O-ring groove 310 to receive an O-ring 312 to form a vacuum seal between the adapter 120 and the sidewall 116. In some embodiments, the adapter 120 includes a notched upper inner edge to accommodate the insulator ring 114. In some embodiments, the surface defined by the notched upper inner edge includes an O-ring groove 316 to receive an O-ring 320 to form a vacuum seal between the adapter 120 and the insulator ring 114.

[0049] Figure 44 is a partial cross-sectional isometric view of a processing chamber according to some embodiments of the present disclosure. In some embodiments, the reflective pad 148 is coupled to the adapter 120. In some embodiments, the reflective pad 148 is coupled to the adapter 120 via a plurality of standoffs 402. In some embodiments, the plurality of standoffs 402 extend into a plurality of cutouts 408 of the heater ring 132. In some embodiments, the plurality of cutouts 408 extend radially inward from the outer surface of the heater ring 132. In some embodiments, the plurality of standoffs 402 include a central opening 412. A plurality of first fasteners 406 may extend through openings 420 in the adapter 120 and into the central opening 412 at a first end of each corresponding standoff in the plurality of standoffs 402 to couple the adapter 120 to the plurality of standoffs 402. A plurality of second fasteners 404 may extend through openings 410 in the reflective pad 148 and into the central opening 412 at a second end of each corresponding standoff in the plurality of standoffs 402 to couple the reflective pad 148 to the plurality of standoffs 402 and, by extension, to the adapter 120.

[0050] Figure 5 is a top isometric top view of the heater ring 132 according to some embodiments of the present disclosure. The heater ring 132 includes a plurality of openings 504 corresponding to the plurality of openings 216 of the process shield 152 to facilitate coupling the process shield 152 to the heater ring 132. In some embodiments, the heater ring 132 includes a plurality of latch slots 508 corresponding to the positions of the alignment latches 302. In some embodiments, the plurality of latch slots 508 includes three slots. In some embodiments, the plurality of cutouts 408 includes eight cutouts.

[0051] In some embodiments, the heater ring 132 includes a plurality of locating lugs 506 extending radially outward from a body 510 of the heater ring 132. When the heater ring 132 is disposed in the processing chamber 100, the plurality of locating lugs 506 may be disposed on chamber components to align the heater ring 132. For example, in some embodiments, the plurality of locating lugs 506 are disposed on the sidewall 116.

[0052] Fig. 9 2 is a cross-sectional side view of a process shield according to some embodiments of the present disclosure. In some embodiments, the outer surface 240 of the lower portion 204 includes a first portion 904 extending downwardly and radially inwardly from the outer lip 214. In some embodiments, the outer surface 240 includes a second portion 906 extending downwardly from the first portion 904 to the lower surface 910 of the process shield 152. In some embodiments, the second portion 906 extends substantially vertically downwardly. In some embodiments, the second portion 906 is disposed radially inwardly of the first portion 904.

[0053] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof.

Claims

1. A process shield for use in a process chamber, comprising: A body having a cylindrical shape, wherein the body includes an upper portion and a lower portion, the upper portion having an outer lip and the lower portion extending downwardly and radially inwardly from the upper portion, wherein the outer lip includes a plurality of openings for accommodating fasteners, a plurality of alignment slots extending radially inwardly from an outer surface of the outer lip, and a recessed lower peripheral edge, and wherein the lower surface of the outer lip includes a plurality of grooves.

2. The process shield of claim 1, wherein the outer lip of the process shield comprises radial gas distribution channels extending from the plurality of openings in the outer lip to the outer surface of the outer lip.

3. The process shield of claim 1, wherein an upper surface of the outer lip includes a plurality of grooves to accommodate spring members.

4. The process shield of claim 1, wherein the plurality of holes comprise counterbores.

5. The process shield of claim 1, wherein the outer surface of the lower portion includes a portion extending vertically downward.

6. The process shield of any one of claims 1 to 5, wherein the outer lip comprises a notched upper peripheral edge.

7. The process shield of any one of claims 1 to 5, wherein the lower portion comprises an inner lip and a leg portion, the inner lip extending radially inwardly, the leg portion extending vertically downwardly from an innermost portion of the inner lip.

8. A process kit for use in a process chamber, comprising: A processing shield as claimed in any one of claims 1 to 5; and a heater ring coupled to the upper portion of the process shield via a plurality of openings in the outer lip, wherein the heater ring includes a resistive heating element embedded in the heater ring, and wherein the heater ring includes a plurality of latch slots corresponding to positions of the plurality of alignment slots of the process shield.

9. The process kit of claim 8, further comprising a deposition ring disposed between the process shield and a substrate support.

10. The process kit of claim 8, wherein the heater ring comprises a heating element embedded in the heater ring.

11. The process kit of claim 8, further comprising an adapter surrounding the process shield, the adapter having a cooling channel disposed therein, wherein the adapter is sandwiched between the process shield and the heater ring.

12. The process kit of claim 11, wherein the adapter comprises a gas delivery channel extending from an outer surface of the adapter to an inner surface of the adapter.

13. The process kit of claim 11, wherein one or more spring members are disposed between the process shield and the adapter to electrically couple the process shield to the adapter.

14. The process kit of claim 11, wherein the adapter comprises an inner lip and the inner lip comprises a plurality of alignment pins to align the process shield to the adapter, and wherein the alignment pins are configured to provide a gap between the inner lip of the adapter and the outer lip of the process shield.

15. The process kit of claim 11, further comprising a reflective pad coupled to the adapter via a standoff through a cutout in the heater ring.

16. A processing chamber comprising: a chamber body defining an interior volume within the chamber body; a target disposed in the interior volume proximate a top portion of the chamber body; a substrate support disposed in the interior volume relative to the target; The process shield of any one of claims 1 to 5, wherein the process shield extends from the target to the substrate support, the shield having an outer lip; an adapter surrounding the process shield, the adapter having a cooling channel disposed therein; and A heater ring is coupled to the outer lip of the process shield via a plurality of openings in the outer lip to sandwich the adapter between the outer lip and the heater ring.

17. The processing chamber of claim 16, wherein the adapter comprises an inner lip and the inner lip comprises a plurality of alignment pins, wherein each of the plurality of alignment pins extends into an alignment slot of the process shield to align the process shield to the adapter while providing a gap between the inner lip of the adapter and the outer lip of the shield.

18. The processing chamber of any one of claims 16 to 17, further comprising a deposition ring disposed between the process shield and the substrate support, wherein the deposition ring comprises an upper surface that is substantially coplanar with an upper surface of a lower portion of the process shield.

19. The processing chamber of any one of claims 16 to 17, further comprising a grounding bracket coupled to the substrate support and configured to electrically couple to the process shield to ground the process shield when the substrate support is in a raised position, and to be spaced apart from the process shield when the substrate support is in a lowered position.

20. The processing chamber of any one of claims 16-17, further comprising an isolation ring, wherein a gas flow path extends through a first gap between the isolation ring and the process shield and through a second gap between the target and the process shield to a region within the cylindrical body of the process shield.

Images