A source-drain breakdown voltage testing device and system for power MOS devices

Abstract

The application provides a kind of source-drain breakdown voltage testing device of power MOS device, including transverse bottom plate, mounting frame, top tight cylinder, connecting seat, temperature detection frame structure, pressure detection bearing frame structure, test frame structure, processor, touch display screen and register, the upper right side bolt mounting of the transverse bottom plate is equipped with mounting frame;The left side bolt mounting of the mounting frame is equipped with top tight cylinder;The lower part bolt mounting of the top tight cylinder is equipped with connecting seat;The lower part of the connecting seat is equipped with temperature detection frame structure;The upper left side of the transverse bottom plate is equipped with pressure detection bearing frame structure;The right side of the mounting frame is equipped with test frame structure;The upper part of the mounting frame is equipped with processor.The current voltage of the application can be flexibly adjusted, and test function is increased.

Description

Technical Field

[0001] This invention belongs to the field of MOS device testing technology, and particularly relates to a source-drain breakdown voltage testing device and system for power MOS devices. Background Technology

[0002] MOSFETs are common power electronic devices, consisting of a source region and a drain region, with a channel region between them. Above the channel region is a gate oxide layer and a polysilicon gate. As a switching device, it exists in two states: on and off. Internally, only a single charge carrier participates in conduction, making it a unipolar device. Its working principle is relatively simple: the source and drain regions have the same conductivity type, while the channel region has the opposite conductivity type. By controlling the voltage on the polysilicon gate, the conductivity type of the channel region is inverted, thus turning the device on or off. Power MOSFETs have advantages such as fast switching speed, high input impedance, easy driving, and no secondary breakdown phenomenon, making them widely used. Drain-source breakdown voltage (BVDSS) is a common test item for power MOSFETs, typically measured when the drain current is 250µA. Existing power MOSFET source-drain breakdown voltage testing devices and systems still suffer from limitations such as limited testing functionality, inconvenience in stress testing MOSFETs, and difficulty in flexibly adjusting the voltage. Summary of the Invention

[0003] To address the aforementioned technical problems, this invention provides a source-drain breakdown voltage testing device for power MOS devices, comprising a horizontal base plate, a mounting bracket, a clamping cylinder, a connecting seat, a temperature detection frame structure, a pressure detection support frame structure, a test frame structure, a processor, a touch screen display, and a register. The mounting bracket is bolted to the upper right side of the horizontal base plate; the clamping cylinder is bolted to the left side of the mounting bracket; the connecting seat is bolted to the lower part of the clamping cylinder; the temperature detection frame structure is mounted on the lower part of the connecting seat; and the pressure detection frame structure is mounted on the upper left side of the horizontal base plate. The mounting frame includes a load-bearing frame structure; a test frame structure is mounted on the right side of the mounting frame; a processor is mounted on the upper part of the mounting frame; a touch screen is mounted on the front side of the mounting frame; a register is mounted on the lower right side of the touch screen; the temperature detection frame structure includes a pressure detection plate, a temperature sensor, a thermally conductive copper plate, a transparent cover, and a counterweight ring; a temperature sensor is mounted in the middle of the inner side of the pressure detection plate; a thermally conductive copper plate is embedded in the lower inner side of the pressure detection plate; a transparent cover is glued to the outer side of the pressure detection plate; and a counterweight ring is glued to the lower part of the transparent cover.

[0004] Preferably, the pressure detection plate is bolted to the lower part of the connecting seat, which facilitates the easy disassembly and assembly of the pressure detection plate according to requirements during use.

[0005] Preferably, the thermally conductive copper plate is in contact with the temperature sensor.

[0006] Preferably, the counterweight ring is placed on the lower outer side of the pressure detection plate.

[0007] A source-drain breakdown voltage testing system for a power MOS device specifically includes the following steps:

[0008] Step 1: Install the device. Insert the source and drain pins of the MOS device into the source and drain connectors respectively to install the MOS device, and then place the MOS device on the carrier board.

[0009] Step 2: Perform voltage tests on the installed devices. Select AC or DC power supply as required. Use a potentiometer to adjust the voltage and current to the minimum value, and then use the potentiometer to adjust the voltage and current upwards in sequence. Test each voltage and current 20 to 100 times. Use a temperature sensor to detect the temperature when the MOS device undergoes avalanche breakdown. At the same time, use a register to store the current, voltage and temperature of each avalanche breakdown.

[0010] Step 3: Perform a pressure test on the device after the voltage test. Use a clamping cylinder to squeeze the MOS device through the pressure detection plate under the connector to achieve the pressure test of the MOS device. Use a pressure sensor to test the pressure value and use a register to store the pressure when the MOS device is crushed.

[0011] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0012] 1. In this invention, the pressure detection plate is bolted to the lower part of the connecting seat, which facilitates the easy disassembly and assembly of the pressure detection plate according to requirements during use.

[0013] 2. In this invention, the thermally conductive copper plate is in contact with the temperature sensor, which is beneficial to utilizing the good thermal conductivity of the thermally conductive copper plate during use, thereby enabling better temperature detection of the MOS device by the temperature sensor.

[0014] 3. In this invention, the counterweight ring is placed on the lower outer side of the pressure detection plate, which is beneficial to keep the transparent cover in the unfolded state during use, so as to avoid crushing and splashing of the MMOS device during pressure detection. At the same time, the transparent cover does not affect the observation of the MMOS device. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the structure of the present invention.

[0016] Figure 2 This is a schematic diagram of the temperature detection frame structure of the present invention.

[0017] Figure 3 This is a structural schematic diagram of the pressure detection load-bearing frame structure of the present invention.

[0018] Figure 4 This is a schematic diagram of the test fixture structure of the present invention.

[0019] Figure 5 This is a flowchart of the present invention.

[0020] In the picture:

[0021] 1. Horizontal base plate; 2. Mounting bracket; 3. Clamping cylinder; 4. Connecting seat; 5. Temperature detection frame structure; 51. Pressure detection plate; 52. Temperature sensor; 53. Thermally conductive copper plate; 54. Transparent cover; 55. Counterweight ring; 6. Pressure detection load-bearing frame structure; 61. Mounting plate; 62. Pressure sensor; 63. Bearing plate; 64. Dust cover; 65. Protective ring; 7. Test frame structure; 71. Battery; 72. Inverter; 73. Potentiometer; 74. Source area connector; 75. Drain area connector; 8. Processor; 9. Touch screen; 10. Register. Detailed Implementation

[0022] The present invention will be further described below with reference to the accompanying drawings:

[0023] Example:

[0024] As attached Figure 1 and attached Figure 2As shown, this invention provides a source-drain breakdown voltage testing device for power MOS devices, including a horizontal base plate 1, a mounting bracket 2, a clamping cylinder 3, a connecting seat 4, a temperature detection frame structure 5, a pressure detection load-bearing frame structure 6, a test frame structure 7, a processor 8, a touch screen display 9, and a register 10. The mounting bracket 2 is bolted to the upper right side of the horizontal base plate 1; the clamping cylinder 3 is bolted to the left side of the mounting bracket 2; the connecting seat 4 is bolted to the lower part of the clamping cylinder 3; the temperature detection frame structure 5 is mounted on the lower part of the connecting seat 4; the pressure detection load-bearing frame structure 6 is mounted on the upper left side of the horizontal base plate 1; the test frame structure 7 is mounted on the right side of the mounting bracket 2; the processor 8 is mounted on the upper part of the mounting bracket 2; the touch screen display 9 is mounted on the front side of the mounting bracket 2; and the register 10 is mounted on the lower right side of the touch screen display 9. The temperature detection frame structure 5 includes a pressure detection plate 51 and a temperature sensor. 52, a thermally conductive copper plate 53, a transparent cover 54, and a counterweight ring 55. The pressure detection plate 51 is bolted to the lower part of the connecting seat 4, allowing for easy disassembly and assembly as needed. A temperature sensor 52 is installed in the middle of the inner side of the pressure detection plate 51. A thermally conductive copper plate 53 is embedded in the lower inner part of the pressure detection plate 51, and the thermally conductive copper plate 53 contacts the temperature sensor 52. During use, the good thermal conductivity of the thermally conductive copper plate 53 allows for better temperature detection of the MOS device using the temperature sensor 52. A transparent cover 54 is glued to the outer side of the pressure detection plate 51. A counterweight ring 55 is glued to the lower part of the transparent cover 54. The counterweight ring 55 is placed in the lower outer part of the pressure detection plate 51, allowing the transparent cover 54 to be in an unfolded state during use, so as to avoid crushing and splashing of the MOS device during pressure detection. At the same time, the transparent cover 54 does not affect the observation of the MMOS device.

[0025] As attached Figure 3 As shown in the above embodiment, specifically, the pressure detection load-bearing frame structure 6 includes a mounting plate 61, a pressure sensor 62, a bearing plate 63, a dust cover 64, and a protective ring 65. The mounting plate 61 is bolted to the upper left side of the transverse base plate 1, making it easy to unscrew the bolts when not in use for disassembly and assembly. Pressure sensors 62 are installed at the four upper corners of the mounting plate 61 to facilitate real-time monitoring of the force and pressure when the tightening cylinder 3 is tightened downwards. The bearing plate 63 is installed above the pressure sensor 62. A dust cover 64 is sleeved on the lower outer side of the bearing plate 63. The outer side of the dust cover 64 is sleeved on the outer side of the mounting plate 61, which facilitates the protection between the mounting plate 61 and the bearing plate 63 and prevents dust and debris from easily entering between the mounting plate 61 and the bearing plate 63 and affecting the detection of the pressure sensor 62. A protective ring 65 is glued to the lower part of the dust cover 64.

[0026] As attached Figure 4 As shown in the above embodiment, specifically, the test frame structure 7 includes a battery 71, an inverter 72, a potentiometer 73, a source connector 74, and a drain connector 75. The battery 71 is installed on the right side of the mounting frame 2. The inverter 72 is installed on the upper part of the battery 71. The inverter 72 facilitates the conversion of DC power to AC power, thereby enabling the detection of power supply to the MOS device at different currents. The potentiometer 73 is installed on the right side of the inverter 72. The potentiometer 73 can be rotated to adjust the magnitude of different voltages and currents. The potentiometer 73 is connected to the source connector 74 and the drain connector 75 wires respectively.

[0027] As attached Figure 5 As shown: A source-drain breakdown voltage testing system for a power MOS device specifically includes the following steps:

[0028] S101: Install the device by inserting the source and drain pins of the MOS device into the source connector 74 and drain connector 75 respectively, and then place the MOS device on the carrier plate 63.

[0029] S102: Perform voltage testing on the installed device. Select AC or DC power supply according to requirements. Use potentiometer 73 to adjust the voltage and current to the minimum value. Then use potentiometer 73 to adjust the voltage and current upwards in sequence. Test each voltage and current 20 to 100 times. Use temperature sensor 52 to detect the temperature when the MOS device undergoes avalanche breakdown. At the same time, use register 10 to store the current, voltage and temperature of each avalanche breakdown.

[0030] S103: Perform a pressure test on the device after voltage testing. Use the clamping cylinder 3 to squeeze the MOS device through the pressure detection plate 51 under the connecting seat 4 to achieve pressure testing of the MOS device. Use the pressure sensor 62 to test the pressure value and use the register 10 to store the pressure when the MOS device is crushed.

[0031] Working principle

[0032] In the operation of this invention, the MOS device to be tested is placed on the carrier plate 63. Then, the source region connector 74 and the drain region connector 75 are connected to the source region pin and drain region pin of the MOS device, respectively. AC or DC power supply is selected according to the requirements. The voltage and current are adjusted to the minimum value using potentiometer 73. Then, the voltage and current are adjusted upwards sequentially using potentiometer 73. Each voltage and current is tested 20 to 100 times. The temperature is detected by temperature sensor 52 when the MOS device undergoes avalanche breakdown. At the same time, the current, voltage and temperature of each avalanche breakdown are stored by register 10. Then, according to the requirements, the clamping cylinder 3 is used to squeeze the MOS device through the pressure detection plate 51 under the connecting seat 4 to realize the pressure test of the MOS device. The pressure sensor 62 is used to test the pressure value, and the pressure when the MOS device is crushed is stored by register 10. During the pressure test, the transparent cover 54 can be used to protect the pressure detection plate 51 from all sides.

[0033] Any technical solution that achieves the above-mentioned technical effects by utilizing the technical solutions described in this invention, or by designing similar technical solutions by those skilled in the art under the inspiration of the technical solutions described in this invention, falls within the protection scope of this invention.

Claims

1. A source-drain breakdown voltage testing device for a power MOS device, characterized in that, The source-drain breakdown voltage testing device for this power MOS device includes a horizontal base plate (1), a mounting bracket (2), a clamping cylinder (3), a connecting seat (4), a temperature detection frame structure (5), a pressure detection load-bearing frame structure (6), a test frame structure (7), a processor (8), a touch screen display (9), and a register (10). The mounting bracket (2) is bolted to the upper right side of the horizontal base plate (1); the clamping cylinder (3) is bolted to the left side of the mounting bracket (2); the connecting seat (4) is bolted to the lower part of the clamping cylinder (3); the temperature detection frame structure (5) is mounted on the lower part of the connecting seat (4); the horizontal base plate (1)... A pressure detection load-bearing frame structure (6) is installed on the upper left side; a test frame structure (7) is installed on the right side of the mounting frame (2); a processor (8) is installed on the upper part of the mounting frame (2); a touch screen display (9) is installed on the front side of the mounting frame (2); a register (10) is installed on the lower right side of the touch screen display (9); the temperature detection frame structure (5) includes a pressure detection plate (51), a temperature sensor (52), a heat-conducting copper plate (53), a transparent cover (54), and a counterweight ring (55); a temperature sensor (52) is installed in the middle of the inner side of the pressure detection plate (51); a temperature sensor (52) is installed in the lower inner side of the pressure detection plate (51); A heat-conducting copper plate (53) is embedded in the pressure detection plate (51); a transparent cover (54) is glued to the outside of the pressure detection plate (51); a counterweight ring (55) is glued to the lower part of the transparent cover (54); the pressure detection load-bearing frame structure (6) includes a mounting plate (61), a pressure sensor (62), a bearing plate (63), a dust cover (64), and a protective ring (65); the mounting plate (61) is bolted to the upper left side of the transverse base plate (1); pressure sensors (62) are installed at the four upper corners of the mounting plate (61); a bearing plate (63) is installed above the pressure sensor (62); and a counterweight ring (55) is sleeved on the lower part of the outer side of the bearing plate (63). A dust cover (64) is provided; the outer side of the dust cover (64) is fitted with the outer side of the mounting plate (61); a protective ring (65) is glued to the lower part of the dust cover (64); the test frame structure (7) includes a battery (71), an inverter (72), a potentiometer (73), a source area connector (74) and a drain area connector (75), the battery (71) is installed on the right side of the mounting frame (2); the inverter (72) is installed on the upper part of the battery (71); the potentiometer (73) is installed on the right side of the inverter (72); the potentiometer (73) is connected to the wires of the source area connector (74) and the drain area connector (75) respectively.

2. The source-drain breakdown voltage testing device for power MOS devices as described in claim 1, characterized in that, The pressure detection plate (51) is bolted to the lower part of the connecting seat (4).

3. The source-drain breakdown voltage testing device for power MOS devices as described in claim 1, characterized in that, The heat-conducting copper plate (53) is in contact with the temperature sensor (52).

4. The source-drain breakdown voltage testing device for power MOS devices as described in claim 1, characterized in that, The counterweight ring (55) is placed on the lower outer side of the pressure detection plate (51).

5. The source-drain breakdown voltage test system for the power MOS device according to claim 1, characterized in that, The source-drain breakdown voltage test system for this power MOS device includes the following steps: Step 1: Install the device by inserting the source and drain pins of the MOS device into the source connector (74) and drain connector (75) respectively, and then place the MOS device on the carrier plate (63). Step 2: Perform voltage tests on the installed devices. Select AC or DC power supply according to the requirements. Use potentiometer (73) to adjust the voltage and current to the minimum value. Then use potentiometer (73) to adjust the voltage and current upwards in sequence. Test each voltage and current 20 to 100 times. Use temperature sensor (52) to detect the temperature when the MOS device undergoes avalanche breakdown. At the same time, use register (10) to store the current, voltage and temperature of each avalanche breakdown. Step 3: Perform a pressure test on the device after the voltage test. Use the clamping cylinder (3) to squeeze the MOS device through the pressure detection plate (51) under the connecting seat (4) to achieve the pressure test of the MOS device. Use the pressure sensor (62) to test the pressure value and use the register (10) to store the pressure when the MOS device is crushed.

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