Stacked electronic components

Abstract

This invention relates to a laminated electronic component. The electronic component includes: first and second inductor constituent portions integrated with a laminate, and a connecting conductor layer inside the laminate connecting the first and second inductor constituent portions. In the first inductor constituent portion, two first via rows are connected to a wide portion of the first inductor conductor layer, and two second via rows are connected to a narrow portion of the first inductor conductor layer. In the second inductor constituent portion, two first via rows are connected to a wide portion of the second inductor conductor layer, and two second via rows are connected to a narrow portion of the second inductor conductor layer.

Description

Technical Field

[0001] This invention relates to a stacked electronic component that includes an inductor. Background Technology

[0002] In recent years, market demands for miniaturization and space-saving in small mobile communication devices have led to a need for miniaturization of bandpass filters used in these devices. Bandpass filters suitable for miniaturization are known to utilize stacks of multiple dielectric and conductor layers.

[0003] Bandpass filters can be constructed using multiple resonators. These resonators are arranged in a circuit structure where adjacent resonators are electromagnetically coupled.

[0004] Chinese Patent Application Publication No. 109643977A discloses a stacked LC filter containing multiple LC resonators within a laminate. In this stacked LC filter, the inductor of each LC resonator is composed of a linear conductor pattern and multiple through-hole conductors. The linear conductor patterns are formed with their opposing long sides non-parallel. On the two opposing short sides of each linear conductor pattern, two through-hole conductors are connected to the longer short side, and one through-hole conductor is connected to the shorter short side.

[0005] As bandpass filters are miniaturized and inductors are reduced in size, both inductance and Q-value decrease. In inductors with structures disclosed in Chinese Patent Application Publication No. 109643977A, the inductance can be increased by increasing the number of turns. In this case, it is preferable to design an inductor with a larger Q-value. However, such designs have not been adequately studied in the past.

[0006] The above problems are not limited to bandpass filters, but apply to all stacked electronic components that include inductors. Summary of the Invention

[0007] The purpose of this invention is to provide a stacked electronic component with good characteristics and containing an inductor suitable for miniaturization.

[0008] The stacked electronic component of the present invention includes: a stack comprising a plurality of stacked dielectric layers; a first inductor configuration portion and a second inductor configuration portion integrally formed with the stack; and a connecting conductor layer that connects the first inductor configuration portion and the second inductor configuration portion inside the stack. The first inductor configuration portion and the second inductor configuration portion respectively include an inductor conductor layer, a plurality of first via rows, and a plurality of second via rows.

[0009] Multiple first via rows are each formed by connecting two or more first vias in series. Multiple second via rows are each formed by connecting two or more second vias in series. The number of multiple first via rows is the same as the number of multiple second via rows. In both the first inductor configuration and the second inductor configuration, the multiple first via rows are arranged in a direction orthogonal to the stacking direction of the dielectric layer, and the multiple second via rows are arranged in another direction orthogonal to the stacking direction of the dielectric layer.

[0010] The conductor layer for an inductor has wide ends and narrow ends located at both ends along its long side. The conductor layer includes a wide portion including the wide ends and a narrow portion including the narrow ends. The dimension of the narrow portion along its short side is smaller than the dimension of the wide portion along its short side. The wide portion of the conductor layer in the first inductor configuration is adjacent to the narrow portion of the conductor layer in the second inductor configuration, separated by a predetermined interval. The narrow portion of the conductor layer in the first inductor configuration is adjacent to the wide portion of the conductor layer in the second inductor configuration, separated by a predetermined interval.

[0011] In both the first and second inductor configurations, a plurality of first via rows are connected to one of the wide and narrow portions, and a plurality of second via rows are connected to the other of the wide and narrow portions. A connecting conductor layer connects multiple portions of the plurality of second via rows in the first inductor configuration that are away from the inductor conductor layer, and multiple portions of the plurality of second via rows in the second inductor configuration that are away from the inductor conductor layer.

[0012] In the stacked electronic component of the present invention, a plurality of first via rows may be arranged in a first direction, and a plurality of second via rows may be arranged in a second direction intersecting the first direction. In this case, the first direction and the second direction may be orthogonal to each other. In addition, one of the first direction and the second direction may be parallel to the long side direction of the conductor layer for inductors, and the other of the first direction and the second direction may be parallel to the short side direction of the conductor layer for inductors.

[0013] Furthermore, in the stacked electronic component of the present invention, the conductor layer for the inductor may also include a width variation portion between a narrow portion and a wide portion. In this case, the size of the width variation portion in the short side direction of the conductor layer for the inductor may also increase as it moves away from the narrow portion.

[0014] Furthermore, in the stacked electronic component of the present invention, the first inductor component, the second inductor component, and the connecting conductor layer may also constitute a single inductor. In this case, the stacked electronic component of the present invention may also further include: a first port; a second port; and a plurality of resonators disposed between the first port and the second port in the circuit structure, and configured such that two resonators adjacent in the circuit structure are electromagnetically coupled. The first port, the second port, and the plurality of resonators may also be integrated with the stack. In addition, the plurality of resonators may also include a first resonator closest to the first port in the circuit structure and a second resonator closest to the second port in the circuit structure. Each of the first resonator and the second resonator may also include an inductor.

[0015] In the stacked electronic component of the present invention, in each of the first inductor configuration section and the second inductor configuration section, a plurality of first via rows are connected to one of the wide and narrow portions of the inductor conductor layer, and a plurality of second via rows are connected to the other of the wide and narrow portions of the inductor conductor layer. The number of the plurality of first via rows is the same as the number of the plurality of second via rows. Thus, according to the present invention, a stacked electronic component with good characteristics and inductors suitable for miniaturization can be realized.

[0016] Other objects, features and benefits of the present invention will become fully apparent from the following description. Attached Figure Description

[0017] Figure 1 This is a circuit diagram illustrating the circuit structure of a stacked electronic component according to one embodiment of the present invention.

[0018] Figure 2 This is a perspective view showing the appearance of a stacked electronic component according to one embodiment of the present invention.

[0019] Figures 3A to 3C This is an explanatory diagram showing the pattern formation surface of the dielectric layer of the first to third layers in a laminated electronic component according to an embodiment of the present invention.

[0020] Figures 4A to 4C This is an explanatory diagram showing the pattern formation surface of the fourth to sixth dielectric layers in a laminated electronic component according to an embodiment of the present invention.

[0021] Figure 5A This is an explanatory diagram showing the pattern formation surface of the dielectric layer, the seventh layer, in a stack of laminated electronic components according to an embodiment of the present invention.

[0022] Figure 5BThis is an explanatory diagram showing the pattern formation surface of the dielectric layers of the eighth to seventeenth layers in a laminated electronic component according to an embodiment of the present invention.

[0023] Figure 5C This is an explanatory diagram showing the pattern formation surface of the eighteenth dielectric layer in a laminated electronic component according to an embodiment of the present invention.

[0024] Figures 6A to 6C This is an explanatory diagram showing the pattern formation surface of the nineteenth to twenty-first dielectric layers in a laminated electronic component according to an embodiment of the present invention.

[0025] Figure 7 This is a perspective view showing the interior of a laminated electronic component according to one embodiment of the present invention.

[0026] Figure 8 It means Figure 7 A top view of a portion of the interior of the stacked structure shown.

[0027] Figure 9 This is a characteristic diagram illustrating an example of the attenuation characteristics of a stacked electronic component according to an embodiment of the present invention.

[0028] Figure 10 This is a characteristic diagram illustrating an example of the reflection attenuation characteristics of the first port of a stacked electronic component according to an embodiment of the present invention.

[0029] Figure 11 This is a characteristic diagram illustrating an example of the reflection attenuation characteristics of the second port of a stacked electronic component according to an embodiment of the present invention. Detailed Implementation

[0030] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. First, referring to... Figure 1 The structure of a stacked electronic component (hereinafter referred to as electronic component) 1 according to one embodiment of the present invention will be described in general. The electronic component 1 according to this embodiment includes at least an inductor. Figure 1 In the example shown, a bandpass filter is illustrated as an electronic component 1 containing an inductor.

[0031] Electronic component 1 includes a first port 2, a second port 3, and multiple resonators disposed between the first port 2 and the second port 3 in a circuit structure. The multiple resonators are configured such that two adjacent resonators are electromagnetically coupled in the circuit structure. Each of the multiple resonators includes an inductor.

[0032] In this embodiment, the multiple resonators are four resonators 11, 12, 13, and 14. Resonator 11 is closest to the first port 2 in the circuit structure. Resonator 14 is closest to the second port 3 in the circuit structure. Resonators 12 and 13 are arranged between resonators 11 and 14 in the circuit structure. It should be noted that in this application, the expression "in the circuit structure" does not refer to the arrangement in the physical structure, but rather to the arrangement in the circuit diagram.

[0033] Resonator 11 corresponds to the "first resonator" in this invention. Resonator 14 corresponds to the "second resonator" in this invention.

[0034] The following is for reference Figure 1 An example of the circuit structure of electronic component 1, which includes a bandpass filter, will be described. Figure 1 The diagram shows the components of the bandpass filter included in electronic component 1. Electronic component 1 also includes inductors L1, L2, L3, L4, L5, L6 and capacitors C1, C2, C3, C4, C5, C6, C7, C8, C9, C10.

[0035] One end of inductor L1 is connected to the first port 2. Capacitor C1 connects one end of inductor L1 to one end of inductor L2. One end of inductor L4 is connected to the second port 3. Capacitor C2 connects one end of inductor L3 to one end of inductor L4. Inductor L5 connects the other end of each of inductors L1 to L4 to the ground wire.

[0036] One end of each capacitor C3 and C7 is connected to one end of inductor L1. One end of each capacitor C4 and C8 is connected to one end of inductor L2. One end of each capacitor C5 and C9 is connected to one end of inductor L3. One end of each capacitor C6 and C10 is connected to one end of inductor L4. Inductor L6 connects the other end of each capacitor (C3-C6) to ground. The other ends of each capacitor (C7-C10) are interconnected.

[0037] Resonator 11 includes inductor L1. Resonator 12 includes inductor L2. Resonator 13 includes inductor L3. Resonator 14 includes inductor L4.

[0038] Next, refer to Figure 2 The other structures of electronic component 1 will be described. Figure 2 This is a perspective view showing the appearance of electronic component 1.

[0039] The electronic component 1 also includes a laminate 50 comprising multiple dielectric layers. Figure 1 The components of the bandpass filter shown are integrated with the laminate 50. As described later, the components of the bandpass filter consist of a plurality of conductors formed in the laminate 50.

[0040] The laminate 50 has a bottom surface 50A and a top surface 50B located at both ends of the lamination direction T of the plurality of dielectric layers, and four side surfaces 50C to 50F connecting the bottom surface 50A and the top surface 50B. Side surfaces 50C and 50D face opposite sides to each other, and side surfaces 50E and 50F also face opposite sides to each other. Side surfaces 50C to 50F are perpendicular to the top surface 50B and the bottom surface 50A.

[0041] Here, as Figure 2 As shown, the X, Y, and Z directions are defined. The X, Y, and Z directions are orthogonal to each other. In this embodiment, the direction parallel to the stacking direction T is designated as the Z direction. Furthermore, the direction opposite to the X direction is designated as the -X direction, the direction opposite to the Y direction as the -Y direction, and the direction opposite to the Z direction as the -Z direction.

[0042] like Figure 2 As shown, bottom surface 50A is located at one end of the laminate 50 in the -Z direction. Top surface 50B is located at one end of the laminate 50 in the Z direction. Both bottom surface 50A and top surface 50B are rectangular shapes, with the longer side surface 50A in the X direction. Side surface 50C is located at one end of the laminate 50 in the -X direction. Side surface 50D is located at one end of the laminate 50 in the X direction. Side surface 50E is located at one end of the laminate 50 in the -Y direction. Side surface 50F is located at one end of the laminate 50 in the Y direction.

[0043] The electronic component 1 also includes a plurality of terminals 111, 112, and 113 disposed on the bottom surface 50A of the laminate 50. Terminal 111 extends in the Y direction near the side surface 50C. Terminal 112 extends in the Y direction near the side surface 50D. Terminal 113 is disposed between terminal 111 and terminal 112.

[0044] Terminal 111 corresponds to the first port 2, and terminal 112 corresponds to the second port 3. Therefore, the first and second ports 2 and 3 are disposed on the bottom surface 50A of the laminate 50. Terminal 113 is connected to the ground wire.

[0045] Next, refer to Figures 3A to 6C An example of multiple dielectric layers constituting the laminate 50 will be described. In this example, the laminate 50 has 21 stacked dielectric layers. Hereinafter, these 21 dielectric layers will be referred to as the first layer to the twenty-first layer from bottom to top. The first layer to the twenty-first layer will be represented by the symbols 51 to 71.

[0046] Figure 3AThis indicates the patterned surface of the first dielectric layer 51. Terminals 111, 112, and 113 are formed on the patterned surface of the dielectric layer 51. Additionally, two through-holes 51T1, three through-holes 51T2, 51T3, and 51T4, and two through-holes 51T11 are formed on the dielectric layer 51. Through-hole 51T1 is connected to terminal 111. Through-holes 51T2 to 51T4 are connected to terminal 113. Through-hole 51T11 is connected to terminal 112.

[0047] Figure 3B This indicates the patterned surface of the second dielectric layer 52. Conductor layers 521, 522, 523, and 524 are formed on the patterned surface of the dielectric layer 52. Conductor layer 524 is connected to conductor layer 523. Additionally, two vias 52T1, three vias 52T2, and two vias 52T11 are formed in the dielectric layer 52. Vias 51T1 and 52T1 formed in the dielectric layer 51 are connected to conductor layer 521. Vias 51T2 formed in the dielectric layer 51 are connected to each other. Vias 51T3 formed in the dielectric layer 51 are connected to conductor layer 523. Vias 51T4 formed in the dielectric layer 51 are connected to conductor layer 524. Vias 51T11 and 52T11 formed in the dielectric layer 51 are connected to conductor layer 522.

[0048] Figure 3C This indicates the patterned surface of the third dielectric layer 53. Conductor layers 531, 532, 533, 534, 535, 536, and 537 are formed on the patterned surface of the dielectric layer 53. Conductor layer 533 is connected to conductor layer 531. Conductor layer 534 is connected to conductor layer 532. Additionally, two through-holes 53T1, two through-holes 53T3, 53T5, 53T7, 53T8, two through-holes 53T9, two through-holes 53T11, and through-holes 53T13 and 53T14 are formed in the dielectric layer 53. Through-holes 52T1 and 52T11 formed in the dielectric layer 52 are connected to through-holes 53T1 and 53T11, respectively. Through-holes 52T2 and 53T3, 53T5, and 53T9 formed in the dielectric layer 52 are connected to conductor layer 537. Through holes 53T7, 53T8, 53T13, and 53T14 are connected to conductor layers 533, 534, 535, and 536, respectively.

[0049] Figure 4AThis indicates the patterned surface of the fourth dielectric layer 54. A conductor layer 541 is formed on the patterned surface of the dielectric layer 54. Through-holes 53T13 and 53T14 formed in the dielectric layer 53 are connected to the conductor layer 541. In addition, two through-holes 54T1, two through-holes 54T3, 54T5, 54T7, 54T8, two through-holes 54T9, and two through-holes 54T11 are formed in the dielectric layer 54. The through-holes 53T1, 53T3, 53T5, 53T7, 53T8, 53T9, and 53T11 formed in the dielectric layer 53 are connected to the through-holes 54T1, 54T3, 54T5, 54T7, 54T8, 54T9, and 54T11, respectively.

[0050] Figure 4B This indicates the pattern formation surface of the fifth dielectric layer 55. Two vias 55T1, two vias 55T3, 55T5, 55T7, 55T8, two vias 55T9, and two vias 55T11 are formed in the dielectric layer 55. The vias 54T1, 54T3, 54T5, 54T7, 54T8, 54T9, and 54T11 formed in the dielectric layer 54 are connected to the vias 55T1, 55T3, 55T5, 55T7, 55T8, 55T9, and 55T11, respectively.

[0051] Figure 4C This indicates the patterned surface of the sixth dielectric layer 56. Connecting conductor layers 561 and 562 are formed on the patterned surface of the dielectric layer 56. Conductor layer 561 has a first end and a second end located at both ends along its long side. Conductor layer 562 has a first end and a second end located at both ends along its long side.

[0052] Additionally, two through-holes 56T1, two through-holes 56T2, two through-holes 56T3, two through-holes 56T4, through-holes 56T5, 56T7, 56T8, two through-holes 56T9, two through-holes 56T10, two through-holes 56T11, and two through-holes 56T12 are formed in the dielectric layer 55. The through-holes 55T1, 55T3, 55T5, 55T7, 55T8, 55T9, and 55T11 formed in the dielectric layer 55 are connected to the through-holes 56T1, 56T3, 56T5, 56T7, 56T8, 56T9, and 56T11, respectively.

[0053] Through-hole 56T2 is connected to a portion near the first end of conductor layer 561. Through-hole 56T4 is connected to a portion near the second end of conductor layer 561. Through-hole 56T10 is connected to a portion near the first end of conductor layer 562. Through-hole 56T12 is connected to a portion near the second end of conductor layer 562.

[0054] Figure 5AThis indicates the patterned surface of the seventh dielectric layer 57. Connecting conductor layers 571, 572, and 573 are formed on the patterned surface of the dielectric layer 57. Conductor layer 571 has a first end and a second end located at both ends along its long side. Conductor layer 572 has a first end and a second end located at both ends along its long side.

[0055] Additionally, two through-holes 57T1, two through-holes 57T2, two through-holes 57T3, two through-holes 57T4, two through-holes 57T5, 57T6, 57T7, 57T8, two through-holes 57T9, two through-holes 57T10, two through-holes 57T11, and two through-holes 57T12 are formed in the dielectric layer 57. The through-holes 56T1, 56T3, 56T7, 56T8, 56T9, and 56T11 formed in the dielectric layer 56 are connected to the through-holes 57T1, 57T3, 57T7, 57T8, 57T9, and 57T11, respectively.

[0056] Vias 56T2 and 57T2 formed in dielectric layer 56 are connected to the portion near the first end of conductor layer 571. Vias 56T4 and 57T4 formed in dielectric layer 56 are connected to the portion near the second end of conductor layer 571. Vias 56T5, 57T5, and 57T6 formed in dielectric layer 56 are connected to conductor layer 573. Vias 56T10 and 57T10 formed in dielectric layer 56 are connected to the portion near the first end of conductor layer 572. Vias 56T12 and 57T12 formed in dielectric layer 56 are connected to the portion near the second end of conductor layer 572.

[0057] Figure 5B The diagram shows the pattern formation surfaces of dielectric layers 58-67, layers eight through seventeen. Two through-holes 58T1, 58T2, 58T3, 58T4, 58T5, 58T6, 58T7, 58T8, 58T9, 58T10, 58T11, and 58T12 are formed in dielectric layers 58-67, respectively. The through-holes 57T1-57T11 formed in dielectric layer 57 are connected to the through-holes 58T1-58T11 formed in dielectric layer 58. Furthermore, in dielectric layers 58-67, adjacent through-holes with the same symbol are interconnected.

[0058] Figure 5C This indicates the patterning surface of the eighteenth dielectric layer 68. Inductor conductor layers 681, 682, 683, 684, 685, and 686 are formed on the patterning surface of the dielectric layer 68. The inductor conductor layers 681, 682, 683, 684, 685, and 686 are respectively... Figure 5CThe up and down directions in the middle, that is, with Figure 2 The Y-direction extends parallel to the direction shown. The conductor layer 681 for inductors has wide ends and narrow ends located at both ends in the long side direction of the conductor layer 681 for inductors. It should be noted that the wide ends are the ends with relatively larger widths, and the narrow ends are the ends with relatively smaller widths.

[0059] Similar to inductor conductor layer 681, inductor conductor layer 682 has wide ends and narrow ends located at both ends along its long side. Inductor conductor layer 685 has wide ends and narrow ends located at both ends along its long side. Inductor conductor layer 686 has wide ends and narrow ends located at both ends along its long side.

[0060] The conductor layer 683 for inductors has a first end and a second end located at both ends along its long side. The conductor layer 684 for inductors has a first end and a second end located at both ends along its long side.

[0061] Additionally, two through holes 68T1, two through holes 68T2, two through holes 68T3, two through holes 68T4, two through holes 68T5, 68T6, 68T7, 68T8, two through holes 68T9, two through holes 68T10, two through holes 68T11, and two through holes 68T12 are formed in the dielectric layer 68.

[0062] Through-holes 58T1 and 68T1 formed in dielectric layer 67 are connected to the vicinity of the wide end of conductor layer 681 for inductors. Through-holes 58T2 and 68T2 formed in dielectric layer 67 are connected to the vicinity of the narrow end of conductor layer 681 for inductors. Through-holes 58T3 and 68T3 formed in dielectric layer 67 are connected to the vicinity of the wide end of conductor layer 682 for inductors. Through-holes 58T4 and 68T4 formed in dielectric layer 67 are connected to the vicinity of the narrow end of conductor layer 682 for inductors.

[0063] Vias 58T5 and 68T5 formed in dielectric layer 67 are connected to the portion near the first end of conductor layer 683 for inductors. Vias 58T6 and 68T6 formed in dielectric layer 67 are connected to the portion near the first end of conductor layer 684 for inductors. Vias 58T7 and 68T7 formed in dielectric layer 67 are connected to the portion near the second end of conductor layer 683 for inductors. Vias 58T8 and 68T8 formed in dielectric layer 67 are connected to the portion near the second end of conductor layer 684 for inductors.

[0064] Vias 58T9 and 68T9 formed in dielectric layer 67 are connected to the vicinity of the wide end of conductor layer 685 for inductors. Vias 58T10 and 68T10 formed in dielectric layer 67 are connected to the vicinity of the narrow end of conductor layer 685 for inductors. Vias 58T11 and 68T11 formed in dielectric layer 67 are connected to the vicinity of the wide end of conductor layer 686 for inductors. Vias 58T12 and 68T12 formed in dielectric layer 67 are connected to the vicinity of the narrow end of conductor layer 686 for inductors.

[0065] Figure 6A This indicates the patterning surface of the nineteenth dielectric layer 69. Inductor conductor layers 691, 692, 693, 694, 695, and 696 are formed on the patterning surface of the dielectric layer 69. The inductor conductor layers 691, 692, 693, 694, 695, and 696 are respectively located on... Figure 6A The up and down directions in the middle, that is, with Figure 2 The Y-direction extends in a direction parallel to the Y-direction shown. The conductor layer 691 for inductors has wide ends and narrow ends located at both ends in the long side direction of the conductor layer 691 for inductors.

[0066] Similar to inductor conductor layer 691, inductor conductor layer 692 has wide ends and narrow ends located at both ends along its long side. Inductor conductor layer 695 has wide ends and narrow ends located at both ends along its long side. Inductor conductor layer 696 has wide ends and narrow ends located at both ends along its long side.

[0067] The conductor layer 693 for inductors has a first end and a second end located at both ends along the long side of the conductor layer 693. The conductor layer 694 for inductors has a first end and a second end located at both ends along the long side of the conductor layer 694.

[0068] Additionally, two through holes 69T1, two through holes 69T2, two through holes 69T3, two through holes 69T4, two through holes 69T5, 69T6, 69T7, 69T8, two through holes 69T9, two through holes 69T10, two through holes 69T11, and two through holes 69T12 are formed in the dielectric layer 69.

[0069] Through-holes 68T1 and 69T1 formed in dielectric layer 68 are connected to the vicinity of the wide end of conductor layer 691 for inductors. Through-holes 68T2 and 69T2 formed in dielectric layer 68 are connected to the vicinity of the narrow end of conductor layer 691 for inductors. Through-holes 68T3 and 69T3 formed in dielectric layer 68 are connected to the vicinity of the wide end of conductor layer 692 for inductors. Through-holes 68T4 and 69T4 formed in dielectric layer 68 are connected to the vicinity of the narrow end of conductor layer 692 for inductors.

[0070] Vias 68T5 and 69T5 formed in dielectric layer 68 are connected to the portion near the first end of conductor layer 693 for inductor. Vias 68T6 and 69T6 formed in dielectric layer 68 are connected to the portion near the first end of conductor layer 694 for inductor. Vias 68T7 and 69T7 formed in dielectric layer 68 are connected to the portion near the second end of conductor layer 693 for inductor. Vias 68T8 and 69T8 formed in dielectric layer 68 are connected to the portion near the second end of conductor layer 694 for inductor.

[0071] Vias 68T9 and 69T9 formed in dielectric layer 68 are connected to the vicinity of the wide end of conductor layer 695 for inductors. Vias 68T10 and 69T10 formed in dielectric layer 68 are connected to the vicinity of the narrow end of conductor layer 695 for inductors. Vias 68T11 and 69T11 formed in dielectric layer 68 are connected to the vicinity of the wide end of conductor layer 696 for inductors. Vias 68T12 and 69T12 formed in dielectric layer 68 are connected to the vicinity of the narrow end of conductor layer 696 for inductors.

[0072] Figure 6B This indicates the patterning surface of the twentieth dielectric layer 70. Inductor conductor layers 701, 702, 703, 704, 705, and 706 are formed on the patterning surface of the dielectric layer 70. The inductor conductor layers 701, 702, 703, 704, 705, and 706 are respectively... Figure 6B The up and down directions in the middle, that is, with Figure 2 The conductor layer 701 for inductors extends in a direction parallel to the Y direction shown. The conductor layer 701 for inductors has wide ends and narrow ends located at both ends in the long side direction of the conductor layer 701 for inductors.

[0073] Similar to inductor conductor layer 701, inductor conductor layer 702 has wide ends and narrow ends located at both ends along its long side. Inductor conductor layer 705 has wide ends and narrow ends located at both ends along its long side. Inductor conductor layer 706 has wide ends and narrow ends located at both ends along its long side.

[0074] The conductor layer 703 for inductors has a first end and a second end located at both ends along its long side. The conductor layer 704 for inductors has a first end and a second end located at both ends along its long side.

[0075] A via 69T1 formed in dielectric layer 69 is connected to a portion near the wide end of conductor layer 701 for inductors. A via 69T2 formed in dielectric layer 69 is connected to a portion near the narrow end of conductor layer 701 for inductors. A via 69T3 formed in dielectric layer 69 is connected to a portion near the wide end of conductor layer 702 for inductors. A via 69T4 formed in dielectric layer 69 is connected to a portion near the narrow end of conductor layer 702 for inductors.

[0076] A via 69T5 formed in dielectric layer 69 is connected to a portion near the first end of conductor layer 703 for inductors. A via 69T6 formed in dielectric layer 69 is connected to a portion near the first end of conductor layer 704 for inductors. A via 69T7 formed in dielectric layer 69 is connected to a portion near the second end of conductor layer 703 for inductors. A via 69T8 formed in dielectric layer 69 is connected to a portion near the second end of conductor layer 704 for inductors.

[0077] A via 69T9 formed in dielectric layer 69 is connected to a portion near the wide end of conductor layer 705 for inductors. A via 69T10 formed in dielectric layer 69 is connected to a portion near the narrow end of conductor layer 705 for inductors. A via 69T11 formed in dielectric layer 69 is connected to a portion near the wide end of conductor layer 706 for inductors. A via 69T12 formed in dielectric layer 69 is connected to a portion near the narrow end of conductor layer 706 for inductors.

[0078] Figure 6C This indicates the pattern forming surface of the twenty-first dielectric layer 71. A mark 711 composed of a conductor layer is formed on the pattern forming surface of the dielectric layer 71.

[0079] Figure 2The stack 50 shown is constructed by stacking the first to the twenty-first dielectric layers 51 to 71 in such a way that the pattern-forming surface of the first dielectric layer 51 becomes the bottom surface 50A of the stack 50, and the surface of the twenty-first dielectric layer 71 opposite to the pattern-forming surface becomes the upper surface 50B of the stack 50.

[0080] Figure 7 This refers to the interior of the laminate 50, which consists of the first to twentieth dielectric layers 51 to 71. For example... Figure 7 As shown, inside the laminate 50, there are laminated... Figures 3A to 6C The diagram shows multiple conductor layers and multiple vias. It should be noted that... Figure 7 In the text, mark 711 is omitted.

[0081] The following is about Figure 1 The circuit components of the electronic component 1 shown are similar to Figures 3A to 6C The correspondence of the internal components of the stacked body 50 shown is explained. The inductor L1 is composed of... Figures 3C to 6B The conductor layers 561, 571, 681, 682, 691, 692, 701, 702 and the through holes 53T1, 53T3, 54T1, 54T3, 55T1, 55T3, 56T1~56T4, 57T1~57T4, 58T1~58T4, 68T1~68T4, 69T1~69T4 are shown.

[0082] Inductor L2 is composed of Figures 3C to 6B The conductor layers 683, 693, 703 and the vias 53T7, 54T7, 55T7, 56T7, 57T5, 57T7, 58T5, 58T7, 68T5, 68T7, 69T5, 69T7 are shown.

[0083] Inductor L3 is composed of Figures 3C to 6B The conductor layers 684, 694, 704 and vias 53T8, 54T8, 55T8, 56T8, 57T6, 57T8, 58T6, 58T8, 68T6, 68T8, 69T6, and 69T8 are shown.

[0084] Inductor L4 is composed of Figures 3C to 6B The conductor layers 562, 572, 685, 686, 695, 696, 705, 706 and the through holes 53T9, 53T11, 54T9, 54T11, 55T9, 55T11, 56T9~56T12, 57T9~57T12, 58T9~58T12, 68T9~68T12, 69T9~69T12 are shown.

[0085] Inductor L5 is made of Figure 3A as well as Figure 3BThe through holes 51T2 and 52T2 shown constitute the inductor L6. Figure 3A The through holes 51T3 and 51T4 shown are formed.

[0086] Capacitor C1 is composed of Figure 3B and Figure 3C The capacitor C2 is composed of conductor layers 521 and 531 and the dielectric layer 52 between these conductor layers. Figure 3B and Figure 3C The conductor layers 522 and 532 shown are formed by the dielectric layer 52 between these conductor layers.

[0087] Capacitor C3 is composed of Figure 3A Terminal 111 shown Figure 3C The capacitor C4 is composed of a conductor layer 537 and dielectric layers 51 and 52 between the terminal 111 and the conductor layer 537. Figure 3B and Figure 3C The capacitor C5 is composed of conductor layers 523 and 533 and the dielectric layer 52 between these conductor layers. Figure 3B and Figure 3C The capacitor C6 is composed of conductor layers 524 and 534 and the dielectric layer 52 between these conductor layers. Figure 3A Terminal 112 shown Figure 3C The conductor layer 537 shown is composed of the dielectric layers 51 and 52 between the terminal 112 and the conductor layer 537.

[0088] Capacitor C7 is made of Figure 3B and Figure 3C The capacitor C8 is composed of conductor layers 521 and 535 and the dielectric layer 52 between these conductor layers. Figure 3C as well as Figure 4A The capacitor C9 is composed of conductor layers 533 and 541 and the dielectric layer 53 between these conductor layers. Figure 3C and Figure 4A The capacitor C10 is composed of conductor layers 534 and 541 and the dielectric layer 53 between these conductor layers. Figure 3B and Figure 3C The conductor layers 522 and 536 shown are formed by the dielectric layer 52 between these conductor layers.

[0089] Next, refer to Figures 3A to 8 The structural features of the electronic component 1 involved in this embodiment will be described. Figure 8 This is a top view showing a portion of the interior of the laminate 50, specifically inductors L1 and L4. First, inductor L1 will be described. (As...) Figure 8 As shown, the inductor L1 is composed of a first inductor component L1A, a second inductor component L1B, and connecting conductor layers 561 and 571.

[0090] The first inductor configuration L1A and the second inductor configuration L1B each include a plurality of first through-hole rows and a plurality of second through-hole rows. The plurality of first through-hole rows are formed by connecting two or more first through-holes in series. The plurality of second through-hole rows are formed by connecting two or more second through-holes in series. In each of the first and second inductor configurations L1A and L1B, the number of plurality of first through-hole rows is the same as the number of plurality of second through-hole rows.

[0091] In each of the first inductor configuration L1A and the second inductor configuration L1B, a plurality of first via rows are arranged in a direction orthogonal to the stacking direction T of the dielectric layers 51-71. A plurality of second via rows are arranged in another direction orthogonal to the stacking direction T of the dielectric layers 51-71. In this embodiment, the plurality of first via rows are arranged in the first direction in both the first inductor configuration L1A and the second inductor configuration L1B. Alternatively, in this embodiment, the plurality of second via rows are arranged in a second direction intersecting the first direction in both the first inductor configuration L1A and the second inductor configuration L1B. The first and second directions may also be orthogonal to each other. In this embodiment, one of the first and second directions is perpendicular to the long side direction of the conductor layer for the inductor (…). Figures 5C to 6B The vertical direction (i.e., the Y direction) is parallel to the direction of the conductor layer of the inductor, and the other of the first and second directions is parallel to the direction of the short side of the conductor layer of the inductor. Figures 5C to 6B (The left and right directions in the middle) are parallel, that is, the X direction is parallel.

[0092] In this embodiment, the plurality of first through-hole rows in the first inductor configuration L1A are two first through-hole rows T1a and T1b, and the plurality of second through-hole rows in the first inductor configuration L1A are two second through-hole rows T2a and T2b. In the first inductor configuration L1A, the vertically adjacent through-holes in through-holes 52T1, 53T1, 54T1, 55T1, 56T1, 57T1, 58T1, 68T1, and 69T1 are interconnected, thereby forming two first through-hole rows T1a and T1b. Furthermore, in the first inductor configuration L1A, the vertically adjacent through-holes in through-holes 56T2, 57T2, 58T2, 68T2, and 69T2 are interconnected, thereby forming two second through-hole rows T2a and T2b. For example... Figure 8 As shown, the two first through-hole rows T1a and T1b are arranged in a direction parallel to the X direction. The two second through-hole rows T2a and T2b are arranged in a direction parallel to the Y direction.

[0093] Furthermore, in this embodiment, the plurality of first through-hole rows in the second inductor constituent part L1B are two first through-hole rows T3a and T3b, and the plurality of second through-hole rows in the second inductor constituent part L1B are two second through-hole rows T4a and T4b. In the second inductor constituent part L1B, the vertically adjacent through-holes in through-holes 53T3, 54T3, 55T3, 56T3, 57T3, 58T3, 68T3, and 69T3 are interconnected, thereby forming two first through-hole rows T3a and T3b. Similarly, in the second inductor constituent part L1B, the vertically adjacent through-holes in through-holes 56T4, 57T4, 58T4, 68T4, and 69T4 are interconnected, thereby forming two second through-hole rows T4a and T4b. Figure 8 As shown, the two first through-hole rows T3a and T3b are arranged in a direction parallel to the X direction. The two second through-hole rows T4a and T4b are arranged in a direction parallel to the Y direction.

[0094] The first inductor component L1A further includes inductor conductor layers 681, 691, and 701. The second inductor component L1B further includes inductor conductor layers 682, 692, and 702. The inductor conductor layers 681, 682, 691, 692, 701, and 702 each include: a wide portion including a wide end; a narrow portion including a narrow end; and a width variation portion between the narrow portion and the wide portion. Figures 5C to 6B , Figure 8 In the diagram, dashed lines represent the boundaries between the wide section and the section with varying width, as well as the boundaries between the narrow section and the section with varying width. Figure 6B In the diagram, symbols 701a, 701b, and 701c represent the wide portion, narrow portion, and width-varying portion of the conductor layer 701 for inductors, respectively. Symbols 702a, 702b, and 702c represent the wide portion, narrow portion, and width-varying portion of the conductor layer 702 for inductors, respectively.

[0095] Here, the short side direction of the conductor layer of the inductor is... Figure 8 The dimensions of the wide portion, narrow portion, and width variation portion in the direction parallel to the X direction shown are called the width.

[0096] In each of the conductor layers 681, 682, 691, 692, 701, and 702 for inductors, the width of the narrow portion is smaller than the width of the wide portion. Furthermore, in each of the conductor layers 681, 682, 691, 692, 701, and 702 for inductors, the width of the width-changing portion increases with distance from the narrow portion. In each of the conductor layers 681, 682, 691, 692, 701, and 702 for inductors, the widths of both the narrow and wide portions can be constant regardless of the distance from the width-changing portion. Alternatively, the width of at least a portion of both the narrow and wide portions can vary depending on the distance from the width-changing portion.

[0097] The wide portions of each of the inductor conductor layers 681, 691, and 701 are adjacent to the narrow portions of each of the inductor conductor layers 682, 692, and 702, separated by a predetermined interval. The narrow portions of each of the inductor conductor layers 681, 691, and 701 are adjacent to the wide portions of each of the inductor conductor layers 682, 692, and 702, separated by a predetermined interval.

[0098] Multiple first through-hole rows are connected to one side of the wide portion and the narrow portion, and multiple second through-hole rows are connected to the other side of the wide portion and the narrow portion. In the first inductor configuration L1A, two first through-hole rows T1a and T1b are connected to the wide portions of each of the inductor conductor layers 681, 691, and 701, and two second through-hole rows T2a and T2b are connected to the narrow portions of each of the inductor conductor layers 681, 691, and 701. In the second inductor configuration L1B, two first through-hole rows T3a and T3b are connected to the wide portions of each of the inductor conductor layers 682, 692, and 702, and two second through-hole rows T4a and T4b are connected to the narrow portions of each of the inductor conductor layers 682, 692, and 702.

[0099] The connecting conductor layers 561 and 571 connect multiple portions of the conductor layers 681, 691, and 701 away from the inductor of the plurality of second through-hole rows T2a and T2b of the first inductor component L1A to multiple portions of the conductor layers 682, 692, and 702 away from the inductor of the plurality of second through-hole rows T4a and T4b of the second inductor component L1B.

[0100] Next, inductor L4 will be described. The structural features of inductor L4 are the same as those of inductor L1, except that the conductor layers and vias that constitute inductor L4 differ from those of inductor L1. The structure of inductor L4 will be described below. Figure 8 As shown, the inductor L4 is composed of a first inductor component L4A, a second inductor component L4B, and connecting conductor layers 562 and 572.

[0101] The first inductor configuration L4A includes two first through-hole rows T11a and T11b and two second through-hole rows T12a and T12b. In the first inductor configuration L4A, adjacent through-holes 52T11, 53T11, 54T11, 55T11, 56T11, 57T11, 58T11, 68T11, and 69T11 are interconnected, thereby forming the two first through-hole rows T11a and T11b. Similarly, adjacent through-holes 56T12, 57T12, 58T12, 68T12, and 69T12 are interconnected, thereby forming the two second through-hole rows T12a and T12b. Figure 8 As shown, the two first through-hole rows T11a and T11b are arranged in a direction parallel to the X direction. The two second through-hole rows T12a and T12b are arranged in a direction parallel to the Y direction.

[0102] The second inductor configuration L4B includes two first through-hole rows T9a and T9b and two second through-hole rows T10a and T10b. In the second inductor configuration L4B, adjacent through-holes 53T9, 54T9, 55T9, 56T9, 57T9, 58T9, 68T9, and 69T9 are interconnected, thereby forming the two first through-hole rows T9a and T9b. Similarly, adjacent through-holes 56T10, 57T10, 58T10, 68T10, and 69T10 are interconnected, thereby forming the two second through-hole rows T10a and T10b. Figure 8 As shown, the two first through-hole rows T9a and T9b are arranged in a direction parallel to the X direction. The two second through-hole rows T10a and T10b are arranged in a direction parallel to the Y direction.

[0103] The first inductor component L4A further includes inductor conductor layers 686, 696, and 706. The second inductor component L4B further includes inductor conductor layers 685, 695, and 705. The inductor conductor layers 685, 686, 695, 696, 705, and 706 each include: a wide portion including a wide end; a narrow portion including a narrow end; and a width variation portion between the narrow portion and the wide portion. Figure 6B In the diagram, symbols 705a, 705b, and 705c represent the wide portion, narrow portion, and width-varying portion of the conductor layer 705 for inductors, respectively. Symbols 706a, 706b, and 706c represent the wide portion, narrow portion, and width-varying portion of the conductor layer 706 for inductors, respectively.

[0104] The wide portions of each of the inductor conductor layers 685, 695, and 705 are adjacent to the narrow portions of each of the inductor conductor layers 686, 696, and 706, separated by a predetermined interval. The narrow portions of each of the inductor conductor layers 685, 695, and 705 are adjacent to the wide portions of each of the inductor conductor layers 686, 696, and 706, separated by a predetermined interval.

[0105] In the first inductor configuration L4A, two first through-hole rows T11a and T11b are connected to the wide portions of each of the inductor conductor layers 686, 696, and 706, and two second through-hole rows T12a and T12b are connected to the narrow portions of each of the inductor conductor layers 686, 696, and 706. In the second inductor configuration L4B, two first through-hole rows T9a and T9b are connected to the wide portions of each of the inductor conductor layers 685, 695, and 705, and two second through-hole rows T10a and T10b are connected to the narrow portions of each of the inductor conductor layers 685, 695, and 705.

[0106] The connecting conductor layers 562 and 572 connect multiple portions of the conductor layers 686, 696, and 706 away from the inductor of the plurality of second through-hole rows T12a and T12b of the first inductor component L4A, and multiple portions of the conductor layers 685, 695, and 705 away from the inductor of the plurality of second through-hole rows T10a and T10b of the second inductor component L4B.

[0107] Next, an example of the characteristics of the electronic component 1 involved in this embodiment will be shown. Figure 9 This is a characteristic diagram representing an example of the attenuation characteristics of electronic component 1. Figure 10 This is a characteristic diagram illustrating an example of the reflection attenuation characteristics of the first port 2 of electronic component 1.

[0108] Figure 11 This is a characteristic diagram illustrating an example of the reflection attenuation characteristics of the second port 3 of electronic component 1. Figures 9 to 11 In the diagram, the horizontal axis represents frequency, and the vertical axis represents attenuation.

[0109] Next, the function and effects of the electronic component 1 according to this embodiment will be explained. The electronic component 1 according to this embodiment includes: a laminate 50 comprising a plurality of stacked dielectric layers 51 to 71; first and second inductor constituent portions L1A and L1B integrated with the laminate 50; and connecting conductor layers 561 and 571 that connect the first inductor constituent portion L1A and the second inductor constituent portion L1B within the laminate 50. The first and second inductor constituent portions L1A and L1B and the connecting conductor layers 561 and 571 constitute an inductor L1. It should be noted that an inductor refers to an inductor represented as a single inductor in a circuit diagram. There are no branch points between one end and the other end of an inductor.

[0110] In this embodiment, the inductor L1 is wound approximately twice around an axis parallel to the X direction. Therefore, according to this embodiment, the inductance of the inductor L1 can be increased.

[0111] Furthermore, in this embodiment, the wide portions of the inductor conductor layers 681, 691, and 701 of the first inductor configuration L1A are adjacent to the narrow portions of the inductor conductor layers 682, 692, and 702 of the second inductor configuration L1B, separated by a predetermined interval. Additionally, the narrow portions of the inductor conductor layers 681, 691, and 701 of the first inductor configuration L1A are adjacent to the wide portions of the inductor conductor layers 682, 692, and 702 of the second inductor configuration L1B, separated by a predetermined interval. Therefore, according to this embodiment, the placement space of the inductor L1 can be reduced.

[0112] Furthermore, in the first inductor configuration L1A, two first through-hole rows T1a and T1b are connected to the wide portions of each of the inductor conductor layers 681, 691, and 701, and two second through-hole rows T2a and T2b are connected to the narrow portions of each of the inductor conductor layers 681, 691, and 701. In the second inductor configuration L1B, two first through-hole rows T3a and T3b are connected to the wide portions of each of the inductor conductor layers 682, 692, and 702, and two second through-hole rows T4a and T4b are connected to the narrow portions of each of the inductor conductor layers 682, 692, and 702. Thus, in this embodiment, the number of via rows connecting to the narrow portions of each of the inductor conductor layers 681, 691, and 701 is the same as the number of via rows connecting to the wide portions of each of the inductor conductor layers 681, 691, and 701, and the number of via rows connecting to the narrow portions of each of the inductor conductor layers 682, 692, and 702 is the same as the number of via rows connecting to the wide portions of each of the inductor conductor layers 682, 692, and 702. Therefore, according to this embodiment, compared to the case where the number of via rows connected to the narrow portions is less than the number of via rows connected to the wide portions, the Q value of the inductor L1 can be increased.

[0113] It should be noted that the laminate 50 is manufactured, for example, by a low-temperature simultaneous firing method. Typically, the shrinkage rates during firing differ between the dielectric material constituting the dielectric layer and the conductive material constituting the through-holes. When the number of through-hole rows connected to one of the narrow and wide portions is greater than the number connected to the other, the through-hole distribution is biased towards one side. In this case, unexpected internal stress is generated in the fired dielectric layer, making it difficult to obtain the desired characteristics. Therefore, in this embodiment, the number of through-hole rows connected to the narrow portion and the number of through-hole rows connected to the wide portion are made the same to suppress the generation of unexpected internal stress.

[0114] The description of inductor L1 above also applies to inductor L4.

[0115] As described above, according to this embodiment, inductors L1 and L4 with good characteristics and suitable for miniaturization of electronic components 1 can be realized.

[0116] It should be noted that the present invention is not limited to the above-described embodiments and various modifications are possible. For example, the electronic component of the present invention may replace the bandpass filter, or may include an electronic component that provides a filter other than the bandpass filter. In the latter case, the filter other than the bandpass filter may or may not include the inductor of the present invention.

[0117] Furthermore, as long as the necessary conditions of the claims are met, the planar shape (shape viewed from above) of the conductor layer for the inductor is not limited to the examples shown in the embodiments, and can be arbitrary. For example, the planar shape of the conductor layer for the inductor can also be L-shaped.

[0118] Alternatively, the first and second via rows can be arranged in directions intersecting the long or short side direction of the conductor layer for the inductor, respectively. Furthermore, the number of the first and second via rows can be three or more.

[0119] Based on the above description, various modes and variations of the present invention can be implemented. Therefore, within the equivalent scope of the claims, the present invention can also be implemented in modes other than the preferred mode described above.

Claims

1. A stacked electronic component, characterized in that, have: A laminate, comprising multiple stacked dielectric layers; The first inductor component and the second inductor component integrated with the laminate; and A connecting conductor layer connects the first inductor component and the second inductor component within the laminate. The first inductor component and the second inductor component each include an inductor conductor layer, a plurality of first via rows, and a plurality of second via rows. The plurality of first through-hole rows are each formed by connecting two or more first through holes in series. The plurality of second through-hole rows are each formed by connecting two or more second through-holes in series. The number of the plurality of first through-hole rows is the same as the number of the plurality of second through-hole rows. In each of the first inductor configuration and the second inductor configuration, the plurality of first via rows are arranged in a direction orthogonal to the stacking direction of the dielectric layer, and the plurality of second via rows are arranged in another direction orthogonal to the stacking direction of the dielectric layer. The conductor layer for the inductor has wide ends and narrow ends located at both ends along the long side of the conductor layer for the inductor. The conductor layer for the inductor includes: a wide portion including the wide end, and a narrow portion including the narrow end. The size of the narrow portion in the short side direction of the conductor layer for the inductor is smaller than the size of the wide portion in the short side direction of the conductor layer for the inductor. The wide portion of the inductor conductor layer of the first inductor configuration portion and the narrow portion of the inductor conductor layer of the second inductor configuration portion are adjacent to each other at a predetermined interval. The narrow portion of the inductor conductor layer of the first inductor configuration portion and the wide portion of the inductor conductor layer of the second inductor configuration portion are adjacent to each other at a predetermined interval. In each of the first inductor configuration section and the second inductor configuration section, the plurality of first through-hole rows are connected to one of the wide portion and the narrow portion, and the plurality of second through-hole rows are connected to the other of the wide portion and the narrow portion. The connecting conductor layer connects multiple portions of the plurality of second through-hole rows of the first inductor configuration that are away from the conductor layer for inductors, and multiple portions of the plurality of second through-hole rows of the second inductor configuration that are away from the conductor layer for inductors.

2. The stacked electronic component according to claim 1, characterized in that, The plurality of first through holes are arranged in a first direction. The plurality of second through-holes are arranged in a second direction that intersects the first direction.

3. The stacked electronic component according to claim 2, characterized in that, The first direction and the second direction are orthogonal to each other.

4. The stacked electronic component according to claim 2, characterized in that, One of the first and second directions is parallel to the long side direction of the conductor layer for the inductor. The other of the first and second directions is parallel to the short side direction of the conductor layer for the inductor.

5. The stacked electronic component according to claim 1, characterized in that, The conductor layer for the inductor further includes a width variation portion between the narrow portion and the wide portion. The size of the width variation portion in the short side direction of the conductor layer for the inductor increases as it moves away from the narrow portion.

6. The stacked electronic component according to claim 1, characterized in that, The first inductor component, the second inductor component, and the connecting conductor layer constitute an inductor.

7. The stacked electronic component according to claim 6, characterized in that, It also has: First port; Second port; as well as Multiple resonators are arranged in the circuit structure between the first port and the second port, and are configured such that two adjacent resonators are electromagnetically coupled. The first port, the second port, and the plurality of resonators are integrated with the laminate. The plurality of resonators includes a first resonator that is closest to the first port in terms of circuit structure and a second resonator that is closest to the second port in terms of circuit structure. The first resonator and the second resonator each include the inductor.

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