A method for measuring contact hole size and automatically determining defocus

By automatically measuring the contact hole size using an SEM machine and comparing it with a reference size, the problem of inaccurate identification of defocus defects in existing technologies is solved, thus improving the accuracy and efficiency of classification.

CN115116878BActive Publication Date: 2026-07-17SHANGHAI HUALI INTEGRATED CIRCUIT CORP

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHANGHAI HUALI INTEGRATED CIRCUIT CORP
Filing Date
2022-06-30
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

In existing technologies, yield engineers struggle to quickly and accurately identify defocusing defects, leading to inaccurate data and wasted human resources.

Method used

The contact hole size is automatically measured using an SEM machine, and when the size difference exceeds a threshold, it is defined as out of focus, thus achieving automatic classification.

Benefits of technology

It improves the accuracy of capturing and classifying out-of-focus defects, and reduces the waste of human resources and time consumption.

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Abstract

The present application provides a method for measuring contact hole size and automatically judging defocus, a plurality of pattern structures are prepared on a wafer; the pattern structures include polysilicon structure, contact hole and metal layer; a SEM machine is used to take a photo of a target pattern, and the size of the target pattern is measured according to the obtained photo; the target pattern on the wafer is taken in the way of taking a photo of die, and the area of the photo includes a plurality of dies in adjacent positions; the size of the target pattern in the plurality of dies is measured; the size of the target pattern in one die of the plurality of dies in adjacent positions is taken as a reference size, the size of the target pattern in the remaining dies is compared with the reference size, if there is a difference between the size of the target pattern in the remaining dies and the reference size, and the difference between the two sizes exceeds a threshold value, it is judged as defocus, and the target pattern in the remaining dies is classified as a defocus class; if the size of the target pattern in the remaining dies is consistent with the reference size, the target pattern in the remaining dies is classified as a normal class.
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