Semiconductor structure and method of manufacturing the same
By introducing indium-containing components into the semiconductor structure, the problems of contact resistance and Schottky barrier in device integration are solved, thereby improving device performance and reducing size.
CN115116950BActive Publication Date: 2026-07-03TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
- Filing Date
- 2022-01-29
- Publication Date
- 2026-07-03
AI Technical Summary
Technical Problem
In semiconductor manufacturing, as devices become smaller, the integration of these devices faces challenges, especially in reducing contact resistance and Schottky barrier to improve device performance.
Method used
Introducing indium-containing components into semiconductor structures, by forming indium-containing components on an oxide semiconductor layer and forming source/drain contacts thereon, reduces contact resistance and decreases the Schottky barrier.
Benefits of technology
By introducing indium-containing components, contact resistance is reduced, semiconductor device performance is improved, and device size can be reduced.
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Smart Images
Figure CN115116950B_ABST
Abstract
Semiconductor structures and methods of fabricating the same are provided. The semiconductor structure includes an interconnect structure and an electrode layer formed over the interconnect structure. The semiconductor structure further includes a gate dielectric layer formed over the electrode layer and an oxide semiconductor layer formed over the gate dielectric layer. The semiconductor structure further includes an indium-containing component covering a surface of the oxide semiconductor layer and a source / drain contact formed over the indium-containing component.
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