Etching method and etching solution
By using a dual-component etching solution consisting of a main etching solution and additives, the problems of reverse etching section angle and etching residue in the etching of copper-molybdenum composite metal wires were solved, achieving a smooth etching effect for the composite metal wires and improving the stability and etching effect of the etching solution.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HKC CORP LTD
- Filing Date
- 2022-06-30
- Publication Date
- 2026-05-19
AI Technical Summary
When etching composite metal lines composed of copper and molybdenum, there are defects such as reverse etching section angle, double-section angle, and etching residue, which affect product performance.
A dual-agent etching solution using a main etching solution and additives, including oxidants, fluoride ions, chelating agents, organic bases, azole compounds, surfactants, and anti-potential etching agents, is used to improve the etching effect by controlling the ion concentration and the addition of additives in the etching solution, adjusting the pH value and etching angle of the etching solution.
It achieves a smooth profile after etching composite metal lines, eliminating issues such as reverse etching section angle, double-segment angle, and etching residue, thereby improving the stability of the etching solution and the etching effect.
Smart Images
Figure CN115132584B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of wet etching technology, and in particular to an etching method and etching solution. Background Technology
[0002] With the trend towards higher resolution and higher frequency in display panels, copper, as a highly conductive metal, is widely used. In LCD panel applications, while using copper to fabricate metal lines in the array substrate, a molybdenum alloy is typically used as a transition layer to increase the adhesion between the conductive layer and the substrate, preventing diffusion of conductive elements from the conductive layer into the substrate. Therefore, composite metals composed of copper and molybdenum are widely used as conductive metal lines, and their fabrication process mainly includes film formation, exposure, development, and etching. Generally, hydrogen peroxide-based copper etching solutions are used in the etching process because they do not introduce other metal ions that could affect the circuitry, and they offer high etching efficiency and a long service life.
[0003] However, when using hydrogen peroxide-based copper etching solutions, the concentrations of hydrogen peroxide and acid ions in the etching solution decrease due to its recycling. Furthermore, the increased copper ion concentration accelerates the decomposition of hydrogen peroxide in the solution, increasing reaction instability. Particularly in the etching of composite metal wires composed of copper and molybdenum, the potential difference between the molybdenum and copper wires creates a galvanic cell effect during etching. This results in defects such as reverse etching cross-sectional angles, double-angles, and etching residues on the etched contour, severely impacting product performance. Summary of the Invention
[0004] The purpose of this application is to provide an etching method and etching solution that makes the composite metal wires smooth after etching, without the defects of reverse etching section angle, double angle, and etching residue.
[0005] This application discloses an etching method for etching a composite metal line, the composite metal line comprising a stacked conductive layer and a transition metal layer, the etching method comprising the steps of:
[0006] A substrate is provided, wherein a composite metal layer is disposed on the surface of the substrate, and an etch barrier layer pattern is formed on the composite metal layer;
[0007] Spraying the main etching solution onto the composite metal layer; and
[0008] The concentration of conductive layer metal ions in the main etching solution is detected. When the concentration of conductive layer metal ions in the main etching solution increases, an additive is added to the main etching solution to etch the composite metal layer into a composite metal line.
[0009] The main etching solution and additives include: oxidant, fluoride ions, chelating agent, organic base, azole compound, surfactant, anti-potential etching agent and solvent.
[0010] Optionally, the main etching solution is sprayed onto the composite metal layer at an etching temperature of 30°C-35°C.
[0011] Optionally, when the concentration of the conductive layer metal ions in the main etching solution increases to 1000 ppm, the amount of the additive added to the main etching solution is 1%-2% of the content of the main etching solution.
[0012] Optionally, the conductive layer is made of copper metal, and the transition metal layer is made of molybdenum-containing metal.
[0013] This application also discloses an etching solution for etching using the etching method described above. The etching solution includes a main etching solution and additives, both of which include: oxidant, fluoride ions, chelating agents, organic bases, azole compounds, surfactants, anti-potential etching agents, and solvents.
[0014] Optionally, in the main etching solution, the concentration of the oxidant is 8%-12%, the concentration of the fluoride ion is no more than 0.05%, the concentration of the chelating agent is 3%-10%, the concentration of the organic base is 3%-10%, the concentration of the azole compound is no more than 3%, the concentration of the surfactant is no more than 3%, and the concentration of the anti-potential etching agent is no more than 3%.
[0015] Optionally, in the main etching solution, the oxidant includes hydrogen peroxide, the solvent for the fluoride ions includes hydrogen fluoride or ammonium fluoride, the chelating agent includes one or more of glycine, malonic acid, alanine, malic acid, iminodiacetic acid, hypozinotriacetic acid, and glutamic acid; the organic base includes one or more of diethanolamine, triethanolamine, and propanolamine; the azole compound includes one or more of benzotriazole, aminotetrazole, and 1,2,4-triazole; the surfactant includes one or more of polyethylene glycol, glycerol, and sorbitol; the anti-potential etching agent includes one or more of phosphoric acid and phosphates; and the solvent includes deionized water.
[0016] Optionally, in the additive, the concentration of the oxidant in the additive is 8%-12%, the concentration of the fluoride ion in the additive is no more than 0.05%, the concentration of the chelating agent in the additive is 10%-30%, the concentration of the organic base in the additive is 10%-30%, the concentration of the azole compound in the additive is no more than 3%, the concentration of the surfactant in the additive is no more than 3%, and the concentration of the anti-potential etching agent in the additive is no more than 3%.
[0017] Optionally, in the additive, the oxidant includes hydrogen peroxide, the solvent for the fluoride ions includes hydrogen fluoride or ammonium fluoride, the chelating agent includes one or more of glycine, malonic acid, alanine, malic acid, iminodiacetic acid, hypozinotriacetic acid, and glutamic acid; the organic base includes one or more of diethanolamine, triethanolamine, and propanolamine; the azole compound includes one or more of benzotriazole, aminotetrazole, and 1,2,4-triazole; the surfactant includes one or more of polyethylene glycol, glycerol, and sorbitol; the antipotential etching agent includes one or more of phosphoric acid and phosphates; and the solvent includes deionized water.
[0018] Optionally, the pH value of the main etching solution is 4-6, and the pH value of the additive is 3-4.
[0019] This application employs a dual-agent etching solution combining a main etching solution and an additive to etch composite metal lines composed of a conductive layer and a transition metal layer. The main etching solution is used first, and the additive is added only after the concentration of conductive layer metal ions in the main etching solution increases, ensuring the ion concentration in the etching solution and guaranteeing the etching effect. Furthermore, by using a mixture of oxidants, fluoride ions, chelating agents, organic bases, azole compounds, surfactants, anti-potential etching agents, and solvents in both the main etching solution and the additives, the application leverages the chelating agents in the etching solution to extend the stable etching period, the organic bases to adjust the pH of the etching solution, the azole compounds to adjust the etching angle after etching, the surfactants to adjust the etching uniformity of each layer and cause oxidized metal to fall off the metal surface, and the anti-potential etching agents to improve the etching angle and reduce etching defects. This comprehensive approach results in a smooth outline of the composite metal line after etching, free from defects such as reverse etching cross-section angles, double-angle defects, and etching residues. Attached Figure Description
[0020] The accompanying drawings, which form part of the specification, are used to provide a further understanding of the embodiments of this application and illustrate the implementation methods of this application, together with the textual description, to explain the principles of this application. Obviously, the drawings described below are merely some embodiments of this application, and those skilled in the art can obtain other drawings based on these drawings without any creative effort. In the drawings:
[0021] Figure 1 This is a schematic flowchart of an etching method provided in an embodiment of this application;
[0022] Figure 2 This is an exemplary etched schematic diagram provided in this application;
[0023] Figure 3 This is a schematic diagram of an etching solution after etching, provided in an embodiment of this application. Detailed Implementation
[0024] It should be understood that the terminology, specific structural and functional details used herein are merely for describing particular embodiments and are representative. However, this application may be implemented in many alternative forms and should not be construed as being limited to the embodiments set forth herein.
[0025] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating relative importance or implying the number of technical features indicated. Furthermore, terms indicating orientation or positional relationships, such as "center," "lateral," "upper," "lower," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," are based on the orientation or relative positional relationships shown in the accompanying drawings and are merely for the purpose of simplifying the description of this application. They do not indicate that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as limiting this application.
[0026] The present application will now be described in detail with reference to the accompanying drawings and optional embodiments.
[0027] This application provides an etching solution for etching metal lines in display panels, semiconductors, or other devices. The metal lines are composite metal lines consisting of two or more layers, including conductive layers and transition metal layers stacked on top of each other. The lower transition metal layer can be composed of other molybdenum-containing metal materials such as Mo, MoTiNi, MoTiAl, MoTiNiCu, or MoTiZr. The molybdenum content in the transition metal layer is greater than 50% and not less than 100%, while the total content of other metals is greater than 0 and less than 50%. Alternatively, the transition metal layer can also be made of other metals and alloys.
[0028] The upper conductive layer can be made of copper or other metallic materials. This application uses a composite metal wire as an example with a two-layer structure, where the conductive layer is made of copper and the transition metal layer is made of molybdenum-containing metal.
[0029] The etching solution is a two-component etching solution, comprising a main etching solution and an additive. Both the main etching solution and the additive include: an oxidant, fluoride ions, a chelating agent, an organic base, an azole compound, a surfactant, an anti-potential etching agent, and a solvent. The additive is added to the main etching solution after the copper ion concentration in the main etching solution increases.
[0030] This application employs a dual-agent etching solution combining a main etching solution and an additive to etch composite metal lines composed of copper and molybdenum. The main etching solution is used first, and the additive is added only after the copper ion concentration in the main etching solution has increased, ensuring the ion concentration in the etching solution and guaranteeing the etching effect. Furthermore, both the main etching solution and the additive are mixtures of oxidants, fluoride ions, chelating agents, organic bases, azole compounds, surfactants, anti-potential etching agents, and solvents. The chelating agents in the etching solution extend the stable etching period; the organic bases adjust the pH of the etching solution; the azole compounds adjust the etching angle after etching; the surfactants adjust the etching uniformity of each plating layer and cause oxidized metal to fall off the metal surface; and the anti-potential etching agents improve the etching angle and reduce etching defects. All these combined methods result in a smooth outline of the composite metal line after etching, free from defects such as reverse etching cross-section angles, double-angle defects, and etching residues.
[0031] Specifically, as shown in Table 1, in the main etching solution (Agent A), the oxidant is hydrogen peroxide, and its concentration in the main etching solution is 8%-12%; the fluoride is one of hydrogen fluoride and ammonium fluoride, and its concentration in the main etching solution does not exceed 0.05%, used to remove Ti, Ni, and Zr, which are difficult to etch; the chelating agent is an organic acid, selected from one or more of glycine, malonic acid, alanine, malic acid, iminodiacetic acid, hyponitrotriacetic acid, or glutamic acid, and its concentration in the main etching solution is 3%-10%, its main function is to react with copper ions during the etching process to form a stable substance, reduce the concentration of copper ions in the solvent, and prolong the stable etching period of the etching solution; the organic base is selected from one or more of diethanolamine, triethanolamine, propanolamine, etc., and its concentration in the main etching solution is 3%-10%, its main function is as a dissociation agent, causing the oxidized metal to fall off the metal surface, and also to adjust the pH in the etching solution.
[0032] The azole compound is selected from one or more of benzotriazole, aminotetrazole, 1,2,4-triazole, etc., and its concentration in the main etching solution does not exceed 3%. It mainly improves the isotropy during the etching process and adjusts the etching angle after etching. The surfactant is selected from one or more of polyethylene glycol, glycerol, sorbitol, etc., and its concentration in the main etching solution does not exceed 3%. It mainly enhances the surface tension of the reactants, adjusts the etching uniformity and stability of each coating layer, and causes the oxidized metal to fall off the metal surface. The anti-potential etching agent is selected from one or more of phosphoric acid and phosphates, and its concentration in the main etching solution does not exceed 3%. It improves the etching angle and reduces etching defects by adjusting the large potential difference in the composite metal wire etching solution. The solvent is deionized water.
[0033] Preferably, in the main etching solution, the concentration of hydrogen peroxide is 9%-10%; the solvent for fluoride ions is hydrogen fluoride, and the concentration of hydrogen fluoride in the main etching solution is 0.01%-0.03%; the chelating agent is one or more of malonic acid, alanine, malic acid, or iminodiacetic acid, and the concentration of the chelating agent in the main etching solution is 5%-9%; the organic base is one or more of triethanolamine and propanolamine, and the concentration of the organic base in the main etching solution is 5%-9%; the azole compound is one or more of benzotriazole and aminotetrazole, and the concentration of the azole compound in the main etching solution does not exceed 1%; the surfactant is one or more of polyethylene glycol or glycerol, and the concentration of the surfactant in the main etching solution does not exceed 2%; the anti-potential etching agent is phosphoric acid, and the concentration of the anti-potential etching agent in the main etching solution does not exceed 2%.
[0034]
[0035] Table 1: Composition of the main etching solution
[0036] As shown in Table 2, in the additive (Agent B), the oxidant is hydrogen peroxide, and its concentration in the main etching solution is 8%-12%; the fluoride is derived from one of hydrogen fluoride and ammonium fluoride, and its concentration in the additive does not exceed 0.05%, used to remove Ti, Ni, and Zr, which are difficult to etch; the chelating agent is an organic acid, selected from one or more of glycine, malonic acid, alanine, malic acid, iminodiacetic acid, hyponitrotriacetic acid, or glutamic acid, and its concentration in the additive is 10%-30%, its main function is to react with copper ions during the etching process to form a stable substance, reduce the concentration of copper ions in the solvent, and prolong the stable etching period of the etching solution; the organic base is selected from one or more of diethanolamine, triethanolamine, propanolamine, etc., and its concentration in the additive is 10%-30%, its main function is as a dissociation agent, causing the oxidized metal to fall off the metal surface, and also to adjust the pH in the etching solution.
[0037] The azole compound is selected from one or more of benzotriazole, aminotetrazole, 1,2,4-triazole, etc., and its concentration in the additive does not exceed 3%. It mainly improves the isotropy during the etching process and adjusts the etching angle after etching. The surfactant is selected from one or more of polyethylene glycol, glycerol, sorbitol, etc., and its concentration in the additive does not exceed 3%. It mainly enhances the surface tension of the reactants, adjusts the etching uniformity and stability of each coating layer, and causes the oxidized metal to fall off the metal surface. The anti-potential etching agent is selected from one or more of phosphoric acid and phosphates, and its concentration in the additive does not exceed 3%. It improves the etching angle and reduces etching defects by adjusting the large potential difference in the composite metal wire etching solution. The solvent is deionized water.
[0038] Preferably, in the additive, the concentration of hydrogen peroxide in the additive is 9%-10%; the solvent for fluoride ions is hydrogen fluoride, and the concentration of hydrogen fluoride in the additive is 0.01%-0.03%; the chelating agent is one or more of malonic acid, alanine, malic acid, or iminodiacetic acid, and the concentration of the chelating agent in the main etching solution is 20%-30%; the organic base is one or more of triethanolamine and propanolamine, and the concentration of the organic base in the additive is 20%-30%; the azole compound is one or more of benzotriazole and aminotetrazole, and the concentration of the azole compound in the additive does not exceed 1%; the surfactant is one or more of polyethylene glycol or glycerol, and the concentration of the surfactant in the additive does not exceed 2%; the anti-potential etching agent is phosphoric acid, and the concentration of the anti-potential etching agent in the additive does not exceed 2%.
[0039]
[0040] Table 2: Additive components
[0041] In the etching solution of this application embodiment, the main etching solution plays the main etching role. As production continues, additives need to be continuously added. Therefore, the main etching solution and the additives have the same composition. However, in order to maintain the stability of the etching solution, the concentration of the additives is higher and the pH value is lower. That is, the pH value of the main etching solution is 4-6 and the pH value of the additives is 3-4.
[0042] Correspondingly, this application also discloses an etching method using the aforementioned etching solution for etching the aforementioned composite metal lines, specifically including the following steps:
[0043] S1: A substrate is provided, wherein a composite metal layer is disposed on the surface of the substrate, and an etching barrier layer pattern is formed on the composite metal layer.
[0044] S2: Spray the main etching solution onto the composite metal layer;
[0045] S3: Detect the concentration of conductive layer metal ions in the main etching solution. When the concentration of conductive layer metal ions in the main etching solution increases, add an additive to the main etching solution to etch the composite metal layer into a composite metal line.
[0046] The main etching solution and additives include: oxidant, fluoride ions, chelating agent, organic base, azole compound, surfactant, anti-potential etching agent and solvent.
[0047] In step S3, taking an example where the conductive layer is made of copper and the transition metal layer is made of molybdenum-containing metal, the concentration of copper ions in the main etching solution is detected. When the concentration of copper ions in the main etching solution increases by 1000 ppm, the amount of additive added to the main etching solution is 1%-2% of the main etching solution content. As etching proceeds, by adding additives, the concentration of copper ions in the etching solution is kept from increasing, the concentration of each ion in the etching solution is maintained, the etching effect is prevented from weakening, and the overall effect of the etching solution is maintained, effectively improving problems such as reverse cross-section angle, double-angle, and etching residue that occur during etching.
[0048] Furthermore, in step S2, the etching temperature is 30℃-35℃, meaning the main etching solution is sprayed at an etching temperature of 30℃-35℃. As the etching temperature increases, the etching reaction accelerates; although the decomposition of hydrogen peroxide also accelerates, shortening its lifespan, the addition of additives solves the problem of insufficient hydrogen peroxide in the etching solution, thus stabilizing the concentration of hydrogen peroxide and allowing the etching reaction to continue rapidly.
[0049] Combining Table 1, Table 2, and Figure 2 and Figure 3 As shown, the inventors fabricated two composite metal wires on a glass substrate by magnetron sputtering. The composite metal wires consisted of a molybdenum-containing transition metal layer and a Cu metal conductive layer (the thickness of the molybdenum-containing transition metal layer was 30 nm, and the thickness of the Cu metal conductive layer was 5000 nm). Considering the usage environment of the liquid crystal panel wiring layer, the samples were subjected to etching experiments. One sample was etched using a commercially available etching solution, while the other was etched using the etching solution provided in the embodiments of this application. The etching results after the same standard etching (Cu ion concentration 5000 ppm, etching time 110 s) are as follows:
[0050] Figure 2This diagram illustrates the etching process using a commercially available etching solution. The inventor demonstrates the post-etching state through five sets of experiments. Each set includes a cross-sectional view, a profile view, and a top view of the etched object. The profile view allows observation of the cross-sectional angles, bisection angles, and reverse cross-sectional angles. The top view allows observation of any etching residue.
[0051] In the first set of experiments, Cu was used as the conductive layer and Mo as the transition metal layer. The conductive layer was located between the glass substrate and the transition metal layer. After etching, the taper angle was 46 degrees, which raised issues of two-segment angle and reverse taper angle. Specific details are as follows... Figure 2 As shown at point A, there is a clear problem with the reverse cross-section angle; however, there is no etching residue.
[0052] In the second group of experiments, Cu was used as the conductive layer, and Mo... 60 Ti 20 Ni 20 As a transition metal layer, the conductive layer is located between the glass substrate and the transition metal layer. After etching, the cross-sectional angle (taper) is 46 degrees, without the problems of double angle and reverse cross-sectional angle, and there is no etching residue.
[0053] In the third group of experiments, Cu was used as the conductive layer, and Mo... 60 Ti 20 Al 20 As a transition metal layer, the conductive layer is located between the glass substrate and the transition metal layer. After etching, the taper angle is 37 degrees, without the issues of double angles or reverse taper angles, but there are etching residues. Specific details are as follows... Figure 2 As shown at point B, there is a clear problem with etching residue.
[0054] In the fourth group of experiments, Cu was used as the conductive layer, and Mo... 60 Ti 19 Ni 13 Cu2 serves as the transition metal layer, with the conductive layer located between the glass substrate and the transition metal layer. After etching, the taper angle is 37 degrees, without the issues of double angle or reverse taper angle, but there are etching residues.
[0055] In the fifth group of experiments, Cu was used as the conductive layer, and Mo... 60 Ti 20 Zr 20 As a transition metal layer, the conductive layer is located between the glass substrate and the transition metal layer. After etching, the taper angle is 29 degrees, which raises issues of two-segment angle and reverse taper angle. Specific details are as follows... Figure 2 As shown at point C, there is a clear problem with the reverse cross-section angle; however, there is no etching residue.
[0056] It can be seen that using the etching solutions currently available on the market can easily lead to problems such as two-segment angles, reverse cross-section angles, and etching residues.
[0057] Figure 3 This is a schematic diagram showing the etching result after etching using the etching solution provided in the embodiments of this application. The inventors also described the etched state using five sets of experiments. Each set of experiments includes a cross-sectional view, a profile view, and a top view of the etched object. The profile view shows the cross-sectional angle, bisection angle, and reverse cross-sectional angle of the experimental object. The top view shows whether there are any etching residues on the experimental object.
[0058] In the first set of experiments, Cu was used as the conductive layer and Mo was used as the transition metal layer. The conductive layer was located between the glass substrate and the transition metal layer. After etching, the cross-sectional angle (taper) was 44 degrees. There were no issues with double angles or reverse cross-sectional angles, and there was no etching residue.
[0059] In the second group of experiments, Cu was used as the conductive layer, and Mo... 60 Ti 20 Ni 20 As a transition metal layer, the conductive layer is located between the glass substrate and the transition metal layer. After etching, the cross-sectional angle (taper) is 46 degrees, without the problems of double angle and reverse cross-sectional angle, and there is no etching residue.
[0060] In the third group of experiments, Cu was used as the conductive layer, and Mo... 60 Ti 20 Al 20 As a transition metal layer, the conductive layer is located between the glass substrate and the transition metal layer. After etching, the cross-sectional angle (taper) is 42 degrees, without the problems of double angle and reverse cross-sectional angle, and there is no etching residue.
[0061] In the fourth group of experiments, Cu was used as the conductive layer, and Mo... 60 Ti 19 Ni 13 Cu2 serves as the transition metal layer, with the conductive layer located between the glass substrate and the transition metal layer. After etching, the taper angle is 38 degrees, without any issues of double angle or reverse taper angle, and there is no etching residue.
[0062] In the fifth group of experiments, Cu was used as the conductive layer, and Mo... 60 Ti 20 Zr 20 As a transition metal layer, the conductive layer is located between the glass substrate and the transition metal layer. After etching, the cross-sectional angle (taper) is 29 degrees, without the problems of double angle and reverse cross-sectional angle, and there is no etching residue.
[0063] It can be seen that etching using the etching solution provided in this application does not result in issues such as double-angle, reverse cross-section angle, or etching residue. Furthermore, as... Figure 3 As shown, after etching, the composite metal wire has a smooth outline with no reverse etching section angle or double-angle, thus proving that the electrochemical reaction during the etching of each element is good; in addition, Figure 3 The absence of residue after etching demonstrates that this etching solution can completely dissolve sparingly soluble elements such as Ti, Ni, and Zr. Therefore, the etching solution in this application exhibits excellent overall performance, effectively addressing issues such as reverse etching cross-sectional angle, second-stage angle, and residue during etching. It can be applied to various alloy layers including Mo, MoTiNi, MoTiAl, MoTiNiCu, and MoTiZr, and is suitable for industries such as LCD and semiconductors.
[0064] It should be noted that the limitations on each step involved in this solution are not considered as limiting the order of steps, provided that they do not affect the implementation of the specific solution. The steps listed first can be executed first, later, or even simultaneously. As long as this solution can be implemented, it should be considered to fall within the scope of protection of this application.
[0065] The above description, in conjunction with specific optional embodiments, provides a further detailed explanation of this application and should not be construed as limiting the specific implementation of this application to these descriptions. For those skilled in the art, various simple deductions or substitutions can be made without departing from the concept of this application, and all such modifications or substitutions should be considered within the scope of protection of this application.
Claims
1. An etching method for etching a composite metal wire, the composite metal wire comprising a stacked conductive layer and a transition metal layer, characterized in that, The etching method includes the following steps: A substrate is provided, wherein a composite metal layer is disposed on the surface of the substrate, and an etch barrier layer pattern is formed on the composite metal layer; Spraying the main etching solution onto the composite metal layer; and The concentration of conductive layer metal ions in the main etching solution is detected. When the concentration of conductive layer metal ions in the main etching solution increases, an additive is added to the main etching solution to etch the composite metal layer into a composite metal line. The main etching solution and additives both include: an oxidant, fluoride ions, a chelating agent, an organic base, an azole compound, a surfactant, an anti-potential etching agent, and a solvent; the oxidant includes hydrogen peroxide; in the main etching solution, the concentration of the chelating agent is 3%-10%, and the concentration of the organic base is 3%-10%; in the additives, the concentration of the chelating agent is 10%-30%, and the concentration of the organic base is 10%-30%; the pH value of the main etching solution is 4-6, and the pH value of the additives is 3-4; When the concentration of the conductive layer metal ions in the main etching solution increases by 1000 ppm, the amount of the additive added to the main etching solution is 1%-2% of the content of the main etching solution; The conductive layer is made of copper metal, and the transition metal layer is made of MoTiNi, MoTiAl, MoTiNiCu or MoTiZr, and the molybdenum content in the transition metal layer is more than 50% and less than 100%.
2. The etching method as described in claim 1, characterized in that, The main etching solution is sprayed onto the composite metal layer at an etching temperature of 30℃-35℃.
3. An etching solution for etching using the etching method as described in any one of claims 1-2, characterized in that, It includes a main etching solution and additives, wherein the main etching solution and additives each include: oxidant, fluoride ions, chelating agent, organic base, azole compound, surfactant, anti-potential etching agent and solvent; The oxidant includes hydrogen peroxide; in the main etching solution, the concentration of the chelating agent in the main etching solution is 3%-10%, and the concentration of the organic base in the main etching solution is 3%-10%; in the additive, the concentration of the chelating agent in the additive is 10%-30%, and the concentration of the organic base in the additive is 10%-30%; the pH value of the main etching solution is 4-6, and the pH value of the additive is 3-4.
4. The etching solution as described in claim 3, characterized in that, In the main etching solution, the concentration of the oxidant is 8%-12%, the concentration of the fluoride ion is no more than 0.05%, the concentration of the azole compound is no more than 3%, the concentration of the surfactant is no more than 3%, and the concentration of the anti-potential etching agent is no more than 3%.
5. The etching solution as described in claim 4, characterized in that, In the main etching solution, the solvent for the fluoride ions includes hydrogen fluoride or ammonium fluoride, and the chelating agent includes one or more of glycine, malonic acid, alanine, malic acid, iminodiacetic acid, hypotriacetic acid, and glutamic acid. The organic base includes one or more of diethanolamine, triethanolamine, and propanolamine; the azole compound includes one or more of benzotriazole, aminotetrazole, and 1,2,4-triazole; the surfactant includes one or more of polyethylene glycol, glycerol, and sorbitol; the antipotential etching agent includes one or more of phosphoric acid and phosphates; and the solvent includes deionized water.
6. The etching solution as described in claim 3, characterized in that, In the additive, the concentration of the oxidant in the additive is 8%-12%, the concentration of the fluoride ion in the additive is no more than 0.05%, the concentration of the azole compound in the additive is no more than 3%, the concentration of the surfactant in the additive is no more than 3%, and the concentration of the anti-potential etching agent in the additive is no more than 3%.
7. The etching solution as described in claim 6, characterized in that, In the additive, the solvent for the fluoride ion includes hydrogen fluoride or ammonium fluoride, and the chelating agent includes one or more of glycine, malonic acid, alanine, malic acid, iminodiacetic acid, hypotriacetic acid, and glutamic acid. The organic base includes one or more of diethanolamine, triethanolamine, and propanolamine; the azole compound includes one or more of benzotriazole, aminotetrazole, and 1,2,4-triazole; the surfactant includes one or more of polyethylene glycol, glycerol, and sorbitol; the antipotential etching agent includes one or more of phosphoric acid and phosphates; and the solvent includes deionized water.