A Capacitive Pressure Sensor Based on a Low-Dimensional Tellurium Network and Its Preparation Method

Abstract

The present invention discloses a capacitive pressure sensor based on a low-dimensional tellurium network and its manufacturing method, belonging to the field of flexible pressure sensors. It includes a first electrode layer, a low-dimensional tellurium dielectric sensitive layer, and a second electrode layer arranged in sequence from top to bottom. The first electrode layer and the second electrode layer are obtained by micro-nano processing such as laser direct writing. The low-dimensional tellurium dielectric sensitive layer is prepared by manufacturing a mixed powder of two-dimensional tellurium nanosheets and one-dimensional tellurium nanowires, and mixing this powder with a polymer elastomer to obtain a dielectric elastomer film. Since tellurium has a high dielectric constant and low conductivity, this makes the low-dimensional tellurium-filled polymer composite have a high dielectric constant and low dielectric loss. In addition, the one-dimensional and two-dimensional tellurium form a multi-structural hybrid network. When an external force is applied to the surface of the sensor, in addition to the thickness change of the dielectric sensitive layer, as the low-dimensional tellurium network changes, the dielectric constant also changes accordingly, which significantly increases the sensitivity of the sensor.

Description

Technical Field

[0001] The present invention relates to the technical field of flexible pressure sensors, and particularly relates to a capacitive pressure sensor based on a low-dimensional tellurium network and a preparation method thereof. Background Art

[0002] Flexible pressure sensors have characteristics such as bendability and conformability, portability and lightness, and are often mounted on some curved interfaces to replace traditional rigid pressure sensors. They can be used in fields such as intelligent robots and wearable devices.

[0003] According to the sensing principle, flexible pressure sensors can be divided into piezoresistive, capacitive, piezoelectric, and triboelectric types. Among them, flexible capacitive pressure sensors have high detection accuracy, fast response speed, and low power consumption, and are one of the main types of flexible pressure sensors. Currently, flexible capacitive pressure sensors mainly sense the magnitude of the externally applied pressure based on the thickness change of the dielectric layer, which results in low sensitivity. In addition, elastic materials belong to low dielectric constant materials, which leads to small signals and poor detection accuracy.

[0004] In recent years, in order to improve their sensitivity and signal stability, the dielectric sensitive materials of flexible capacitive pressure sensors mainly include ionic gels and particle-filled elastomeric polymers. Compared with ionic gel dielectric materials, particle-filled elastomeric polymers have better robustness. Common filler particles include high dielectric constant particles and conductive particles. High dielectric constant particles such as barium titanate are mostly spherical in shape and are difficult to form a network. Therefore, when used as the dielectric material of a capacitive pressure sensor, the improvement of sensitivity is limited. Conductive particles have high conductivity, which increases the dielectric constant of their composite materials, but also leads to large dielectric losses in their capacitive pressure sensors. Therefore, it is extremely important to develop a flexible capacitive pressure sensor with high sensitivity, high dielectric constant, and low dielectric loss. Summary of the Invention

[0005] Aiming at the deficiencies of the prior art, the present invention provides an elastic dielectric material based on a low-dimensional tellurium network and a manufacturing method thereof, which has high pressure sensitivity, high dielectric constant, and low dielectric loss, and solves the problems raised in the above background art.

[0006] To achieve the above objectives, the present invention is realized through the following technical solutions: A preparation method of a capacitive pressure sensor based on a low-dimensional tellurium network, including three parts: synthesis of low-dimensional tellurium powder, preparation of a low-dimensional tellurium dielectric sensitive layer, and preparation of a capacitive pressure sensor based on a low-dimensional tellurium network.

[0007] Preferably, the synthesis of the low-dimensional tellurium powder includes the following steps:

[0008] A1: Take sodium tellurite powder and polyvinylpyrrolidone in proportion and place them in a reaction kettle. Add a solvent to the reaction kettle and stir magnetically for 15 minutes;

[0009] A2: Add hydrazine hydrate and ammonia water to the uniformly stirred solution and stir evenly;

[0010] A3: Place the reaction kettle containing the solution in an oven for reaction. After the reaction is completed, pour the solution in the reaction kettle into a centrifuge tube, and obtain tellurene powder mixed with two-dimensional layered structure and one-dimensional structure through centrifugation, washing, and drying;

[0011] A4: Put the obtained tellurene powder into a ball mill or a sand mill and grind it to obtain low-dimensional tellurium powder.

[0012] Preferably, in step A1, the mass ratio of sodium tellurite powder to polyvinylpyrrolidone is 1 g:(5.3 - 5.5) g.

[0013] Preferably, in step A1, the mass ratio of sodium tellurite powder to polyvinylpyrrolidone is 1 g:5.4 g.

[0014] Preferably, in step A1, the solvent is deionized water, and the mass-volume ratio of polyvinylpyrrolidone to the solvent is 1 g:66 mL.

[0015] Preferably, in step A2, the ratio of hydrazine hydrate to ammonia water is 1:2, and the ratio of hydrazine hydrate to the solvent is 1:20.

[0016] Preferably, in step A3, the reaction time in the oven is 35 - 45 hours, and the reaction temperature is 180 °C; the centrifugation speed is 10000 - 15000 rpm, and the centrifugation time is 5 minutes; the organic solvent for washing is acetone or isopropanol, the addition amount is 30 ml, and the washing times are 3 - 5 times; the drying time is 12 hours, and the drying temperature is 80 °C.

[0017] Preferably, in step A3, the reaction time in the oven is 40 hours, and the centrifugation speed is 12500 rpm.

[0018] Preferably, the preparation of the low-dimensional tellurium dielectric sensitive layer includes the following steps:

[0019] B1: Take low-dimensional tellurium powder and put it into a container, and pour in an organic solvent;

[0020] B2: Disperse it ultrasonically with a cell crusher for 30 minutes;

[0021] B3: Put the mixture into a polymer, mechanically stir for 20 minutes, then heat the mixture to 80 °C, evaporate the solvent, and continue to stir the mixture for 30 minutes.

[0022] B4: Apply the mixture onto a glass slide using a film applicator and cure it in an oven.

[0023] B5: After taking the sample out of the oven, peel the film from the glass slide to obtain a low-dimensional tellurium dielectric sensitive layer.

[0024] Preferably, the polymer in step B3 is polydimethylsiloxane or polyvinylidene fluoride or thermoplastic polyurethane elastomer rubber.

[0025] Preferably, the preparation of the capacitive pressure sensor based on a low-dimensional tellurium network includes the following steps:

[0026] C1: Use micro-nano processing technology to fabricate two symmetrical capacitive electrodes on a flexible substrate, and then fold the flexible substrate in half so that the two capacitive electrodes are symmetrically arranged above and below to obtain a first electrode layer and a second electrode layer.

[0027] C2: Cut the low-dimensional tellurium dielectric sensitive material into a specified shape and place it on the flexible substrate so that it can cover the capacitive electrodes of the first electrode layer and the second electrode layer.

[0028] C3: Package the folded first electrode layer and second electrode layer to fabricate a capacitive pressure sensor based on a low-dimensional tellurium network.

[0029] The present invention also provides a capacitive pressure sensor based on a low-dimensional tellurium network, which includes a first electrode layer, a second electrode layer, and a low-dimensional tellurium dielectric sensitive material layer. Capacitive electrodes are provided on both the first electrode layer and the second electrode layer. The first electrode layer and the second electrode layer are obtained by folding a single flexible substrate in half, and their capacitive electrodes are symmetrically arranged. The low-dimensional tellurium dielectric sensitive material layer is disposed between the two capacitive electrodes and packages the first electrode layer and the second electrode layer.

[0030] The present invention has the following beneficial effects: The low-dimensional tellurium dielectric sensitive layer is prepared by fabricating a mixed powder of two-dimensional tellurium nanosheets and one-dimensional tellurium nanowires, and mixing this powder with a polymer elastomer to obtain a dielectric elastomer film. Since tellurium has a high dielectric constant and low conductivity, this makes the low-dimensional tellurium-filled polymer composite material have a high dielectric constant and low dielectric loss. In addition, the one-dimensional and two-dimensional tellurium form a multi-structural hybrid network. When an external force is applied to the surface of the sensor, in addition to the thickness change of the dielectric sensitive layer, with the change of the low-dimensional tellurium network, the dielectric constant also changes accordingly, which significantly increases the sensitivity of the sensor. Description of the Drawings

[0031] Figure 1 It is a schematic structural diagram of the present invention. Detailed Embodiments

[0032] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments.

[0033] A capacitive pressure sensor based on a low-dimensional tellurium network according to the present invention has a structural diagram as Figure 1 shown, including a first electrode layer 1, a second electrode layer 4, and a low-dimensional tellurium dielectric sensitive material layer 3. Capacitive electrodes 2 are provided on both the first electrode layer 1 and the second electrode layer 4. The first electrode layer 1 and the second electrode layer 4 are obtained by folding a single flexible substrate in half, and the capacitive electrodes 2 of the two are made symmetric. The low-dimensional tellurium dielectric sensitive material layer 3 is disposed between the two capacitive electrodes 2 and encapsulates the first electrode layer 1 and the second electrode layer 4.

[0034] The preparation method of the present invention includes three parts: the synthesis of low-dimensional tellurium powder, the preparation of a low-dimensional tellurium dielectric sensitive layer, and the preparation of a capacitive pressure sensor based on a low-dimensional tellurium network.

[0035] The synthesis of the low-dimensional tellurium powder includes the following steps:

[0036] A1: Take sodium tellurite powder and polyvinylpyrrolidone in proportion and place them in a reaction kettle. Add a solvent to the reaction kettle and stir magnetically for 15 minutes;

[0037] A2: Add hydrazine hydrate and ammonia water to the uniformly stirred solution and stir evenly;

[0038] A3: Place the reaction kettle containing the solution in an oven for reaction. After the reaction is completed, pour the solution in the reaction kettle into a centrifuge tube, and obtain tellurene powder mixed with two-dimensional layered structure and one-dimensional structure through centrifugation, washing, and drying;

[0039] A4: Put the obtained tellurene powder into a ball mill or a sand mill and grind it to obtain low-dimensional tellurium powder.

[0040] Among them, in step A1, the mass ratio of sodium tellurite powder to polyvinylpyrrolidone is 1 g:(5.3 - 5.5) g.

[0041] Among them, in step A1, the mass ratio of sodium tellurite powder to polyvinylpyrrolidone is 1 g:5.4 g.

[0042] Among them, in step A1, the solvent is deionized water, and the mass-volume ratio of polyvinylpyrrolidone to the solvent is 1 g:66 mL.

[0043] Among them, in step A2, the ratio of hydrazine hydrate to ammonia water is 1:2, and the ratio of hydrazine hydrate to the solvent is 1:20.

[0044] Among them, in step A3, the reaction time in the oven is 35 to 45 hours, and the reaction temperature is 180°C; the centrifugation speed is 10,000 to 15,000 rpm, and the centrifugation time is 5 minutes; the organic solvent for washing is acetone or isopropyl alcohol, the addition amount is 30 ml, and the washing times are 3 to 5 times; the drying time is 12 hours, and the drying temperature is 80°C.

[0045] Among them, in step A3, the reaction time in the oven is 40 hours, and the centrifugation speed is 12,500 rpm.

[0046] The preparation of the low-dimensional tellurium dielectric sensitive layer includes the following steps:

[0047] B1: Take low-dimensional tellurium powder and put it into a container, and pour in an organic solvent;

[0048] B2: Ultrasonically disperse for 30 minutes with a cell crusher;

[0049] B3: Put the mixture into a polymer, mechanically stir for 20 minutes, then heat the mixture to 80°C, evaporate the solvent, and continue to stir the mixture for 30 minutes.

[0050] B4: Coat the mixture onto a glass slide with a film coater and cure it in an oven;

[0051] B5: After taking the sample out of the oven, peel the film from the glass slide to obtain the low-dimensional tellurium dielectric sensitive layer.

[0052] Among them, the polymer in step B3 is polydimethylsiloxane or polyvinylidene fluoride or thermoplastic polyurethane elastomer rubber.

[0053] The preparation of the capacitive pressure sensor based on the low-dimensional tellurium network includes the following steps:

[0054] C1: Use micro-nano processing technology to prepare two symmetric capacitive electrodes on a flexible substrate, and then fold the flexible substrate in half so that the two capacitive electrodes are symmetric up and down to obtain a first electrode layer and a second electrode layer;

[0055] C2: Cut the low-dimensional tellurium dielectric sensitive material into a specified shape and place it on the flexible substrate so that it can cover the capacitive electrodes of the first electrode layer and the second electrode layer;

[0056] C3: Package the folded first electrode layer and the second electrode layer to prepare a capacitive pressure sensor based on the low-dimensional tellurium network.

[0057] Example 1

[0058] A capacitive pressure sensor based on a low-dimensional tellurium network is successively provided with a first electrode layer 1, a low-dimensional tellurium dielectric sensitive layer 3, and a second electrode layer 4 from top to bottom. The first electrode layer and the second electrode layer are both obtained by micro-nano processing of capacitive electrodes 2 on a flexible substrate.

[0059] The above-mentioned low-dimensional tellurium dielectric sensitive layer is obtained by filling low-dimensional tellurium powder into polydimethylsiloxane (PDMS), and the low-dimensional tellurium powder is obtained by hydrothermal synthesis of sodium tellurite and PVP.

[0060] The above-mentioned flexible substrate uses polyimide (PI).

[0061] The capacitive electrodes 2 of the above-mentioned first electrode layer 1 and second electrode layer 4 are both conductive metals.

[0062] Step 1: Synthesis of low-dimensional tellurium powder

[0063] Take 0.1 g of sodium tellurite powder and put it into a reaction kettle, and add 0.53 g of polyvinylpyrrolidone (PVP) into the reaction kettle. Then pour 35 ml of deionized water into the reaction kettle, stir magnetically for 15 minutes, add 3.5 ml of ammonia water, then add 1.75 ml of hydrazine hydrate and stir magnetically until evenly mixed. Take out the magnetic stirrer from the reaction kettle, put the reaction kettle into an oven at 180 °C, and let it react for 35 hours. Take out the reaction kettle, pour the suspension in the reaction kettle into two centrifuge tubes respectively, make the volume of the suspension in the two centrifuge tubes close, and centrifuge it for 5 minutes at a rotation speed of 10000 rpm. Take out the centrifuge tubes, remove the upper liquid in the centrifuge tubes, add 30 mL of isopropanol solvent to the centrifuge tubes, and then centrifuge for 5 minutes at a rotation speed of 10000 rpm. Repeat the above steps 3 times, put the finally centrifuged suspension into an oven to dry, the oven temperature is 80 °C, and the drying time is 12 hours. Finally, take out the sample from the oven and grind the sample into powder with a ball mill.

[0064] Step 2: Preparation of the low-dimensional tellurium dielectric sensitive layer

[0065] Take 0.05 g of low-dimensional tellurium powder and put it into a container and pour 30 mL of isopropanol into it. Disperse it ultrasonically with a cell crusher for 30 minutes. Then put 5 g of polydimethylsiloxane (PDMS) into the mixture and stir mechanically for 20 minutes. Heat the mixture to 80 °C to evaporate the solvent. Then, add a cross-linking agent of polydimethylsiloxane (PDMS) to the mixture and continue to stir for 5 minutes. Then smear the mixture on a glass slide and put it into an oven at 80 °C. After curing for 2 hours, take out the sample from the oven, peel the polydimethylsiloxane (PDMS) and low-dimensional tellurium composite material film from the glass slide to obtain the low-dimensional tellurium dielectric sensitive material 2.

[0066] Step 3: Preparation of the capacitive pressure sensor based on the low-dimensional tellurium network

[0067] Two symmetrical capacitive electrodes 2 are prepared on polyimide (PI) by laser direct writing and magnetron sputtering. Then, the flexible substrate is folded in half so that the two capacitive electrodes are symmetrically arranged up and down, obtaining the first electrode layer 1 and the second electrode layer 4. A low-dimensional tellurium dielectric sensitive material 2 is cut into a square by a cutting machine or other equipment and placed on polyimide (PI) so that it can cover the capacitive electrodes 2 of the first electrode layer 1 and the second electrode layer 4. The folded first electrode layer 1 and second electrode layer 4 are encapsulated with transparent double-sided tape to prepare a capacitive pressure sensor based on a low-dimensional tellurium network.

[0068] Example 2

[0069] A capacitive pressure sensor based on a low-dimensional tellurium network is provided with a first electrode layer 1, a low-dimensional tellurium dielectric sensitive layer 3, and a second electrode layer 4 from top to bottom. The first electrode layer and the second electrode layer are both micro-nano processed on a flexible substrate to obtain capacitive electrodes 2.

[0070] The above-mentioned low-dimensional tellurium dielectric sensitive layer is obtained by filling poly(dimethylsiloxane) (PDMS) with low-dimensional tellurium powder, and the low-dimensional tellurium powder is obtained by hydrothermal synthesis of sodium tellurite and PVP.

[0071] The above-mentioned flexible substrate includes polyimide (PI).

[0072] The capacitive electrodes 2 of the above-mentioned first electrode layer 1 and second electrode layer 4 are both conductive metals.

[0073] The above-mentioned capacitive pressure sensor based on a low-dimensional tellurium network is characterized in that the preparation includes the following steps:

[0074] Step 1: Synthesis of low-dimensional tellurium powder.

[0075] Take 0.1 g of sodium tellurite powder and put it into a reaction kettle, and add 0.54 g of polyvinylpyrrolidone (PVP) into the reaction kettle. Then pour 35.6 ml of deionized water into the reaction kettle, stir magnetically for 15 minutes, add 3.56 ml of ammonia water, then add 1.78 ml of hydrazine hydrate and stir magnetically until evenly mixed. Take out the magnetic stirrer from the reaction kettle, put the reaction kettle into an oven at 180 °C, and let it react for 40 hours. Take out the reaction kettle, pour the suspension in the reaction kettle into two centrifuge tubes respectively, make the suspension volumes in the two centrifuge tubes close, and centrifuge for 5 minutes at a rotation speed of 12500 rpm. Take out the centrifuge tubes, remove the upper liquid in the centrifuge tubes, add 30 mL of isopropanol solvent to the centrifuge tubes, and centrifuge for 5 minutes at a rotation speed of 12500 rpm. Repeat the above steps 4 times, put the finally centrifuged suspension into an oven to dry, the oven temperature is 80 °C, and the drying time is 12 hours. Finally, take out the sample from the oven and grind the sample into powder with a ball mill.

[0076] Step 2: Preparation of the low-dimensional tellurium dielectric sensitive layer

[0077] Take 0.1 g of low-dimensional tellurium powder and put it into a container, then pour 30 mL of isopropanol into it. Disperse it by ultrasonic wave with a cell crusher for 30 minutes. Then put 5 g of polyvinylidene fluoride (PVDF) into the mixture and stir it mechanically for 20 minutes. Heat the mixture to 80 °C to evaporate the solvent. Then apply the mixture onto a glass slide and put it into an oven at 80 °C. After curing for 2 hours, take out the sample from the oven, and peel off the polyvinylidene fluoride (PVDF) and low-dimensional tellurium composite material film from the glass slide to obtain the low-dimensional tellurium dielectric sensitive material 2.

[0078] Step 3: Preparation of the capacitive pressure sensor based on the low-dimensional tellurium network

[0079] Use laser direct writing and magnetron sputtering to prepare two symmetric capacitive electrodes 2 on polyimide (PI). Then fold the flexible substrate in half so that the two capacitive electrodes are symmetric up and down to obtain the first electrode layer 1 and the second electrode layer 4. Use equipment such as a cutting machine to cut the low-dimensional tellurium dielectric sensitive material 2 into a square shape, and place it on the polyimide (PI) so that it can cover the capacitive electrodes 2 of the first electrode layer 1 and the second electrode layer 4. Use transparent double-sided tape to encapsulate the folded first electrode layer 1 and the second electrode layer 4 to prepare the capacitive pressure sensor based on the low-dimensional tellurium network.

[0080] Example 3

[0081] A capacitive pressure sensor based on a low-dimensional tellurium network is provided with a first electrode layer 1, a low-dimensional tellurium dielectric sensitive layer 3, and a second electrode layer 4 from top to bottom. The first electrode layer and the second electrode layer are both micro-nano processed on a flexible substrate to obtain capacitive electrodes 2.

[0082] The above-mentioned low-dimensional tellurium dielectric sensitive layer is obtained by filling poly(dimethylsiloxane) (PDMS) with low-dimensional tellurium powder, and the low-dimensional tellurium powder is obtained by hydrothermal synthesis of sodium tellurite and PVP.

[0083] The above-mentioned flexible substrate includes polyimide (PI).

[0084] The capacitive electrodes 2 of the above-mentioned first electrode layer 1 and second electrode layer 4 are both conductive metals.

[0085] The above-mentioned capacitive pressure sensor based on a low-dimensional tellurium network is characterized in that its preparation includes the following steps:

[0086] Step 1: Synthesis of low-dimensional tellurium powder.

[0087] Put 0.1 g of sodium tellurite powder into the reaction kettle, and add 0.55 g of polyvinylpyrrolidone (PVP) into the reaction kettle. Then pour 36.3 ml of deionized water into the reaction kettle, stir magnetically for 15 minutes, add 3.63 ml of ammonia water, then add 1.82 ml of hydrazine hydrate and stir magnetically until evenly mixed. Take out the magnetic stirrer from the reaction kettle, put the reaction kettle into an oven at 180 °C and let it react for 45 hours. Take out the reaction kettle, pour the suspension in the reaction kettle into two centrifuge tubes respectively, make the volume of the suspension in the two centrifuge tubes close, and centrifuge it for 5 minutes at a rotation speed of 15000 rpm. Take out the centrifuge tubes, remove the upper liquid in the centrifuge tubes, add 30 mL of acetone solvent into the centrifuge tubes, and centrifuge for 5 minutes at a rotation speed of 15000 rpm. Repeat the above steps 5 times, put the finally centrifuged suspension into the oven to dry, the oven temperature is 80 °C, and the drying time is 12 hours. Finally, take out the sample from the oven and grind the sample into powder with a ball mill.

[0088] Step 2: Preparation of low-dimensional tellurium dielectric sensitive layer

[0089] Put 0.15 g of low-dimensional tellurium powder into a container and pour 30 mL of isopropanol into it. Disperse it ultrasonically with a cell crusher for 30 minutes. Then put 5 g of thermoplastic polyurethane elastomer rubber (TPU) into the mixture and stir mechanically for 20 minutes. Heat the mixture to 80 °C to evaporate the solvent. Then smear the mixture onto a glass slide and put it into an oven at 80 °C. After curing for 2 hours, take out the sample from the oven, peel the thermoplastic polyurethane elastomer rubber (TPU) and the low-dimensional tellurium composite material film from the glass slide to obtain the low-dimensional tellurium dielectric sensitive material 2.

[0090] Step 3: Preparation of capacitive pressure sensor based on low-dimensional tellurium network

[0091] Use laser direct writing and magnetron sputtering to prepare two symmetrical capacitive electrodes 2 on polyimide (PI). Then fold the flexible substrate in half so that the two capacitive electrodes are symmetrically upper and lower to obtain the first electrode layer 1 and the second electrode layer 4. Use equipment such as a cutting machine to cut the low-dimensional tellurium dielectric sensitive material 2 into a square and place it on polyimide (PI) so that it can cover the capacitive electrodes 2 of the first electrode layer 1 and the second electrode layer 4. Seal the folded first electrode layer 1 and the second electrode layer 4 with transparent double-sided tape to prepare a capacitive pressure sensor based on the low-dimensional tellurium network.

[0092] As mentioned above, it is only the preferred specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention, according to the technical solution of the present invention and its inventive concept, makes equivalent substitutions or changes, and all should be covered within the protection scope of the present invention.

Claims

1. A preparation method of a capacitive pressure sensor based on a low-dimensional tellurium network, characterized in that: It includes three parts: the synthesis of low-dimensional tellurium powder, the preparation of a low-dimensional tellurium dielectric sensitive layer, and the preparation of a capacitive pressure sensor based on a low-dimensional tellurium network; The synthesis of the low-dimensional tellurium powder includes the following steps: A1: Take sodium tellurite powder and polyvinylpyrrolidone in proportion and place them in a reaction kettle. Add a solvent to the reaction kettle and stir evenly with a magnetic stirrer; A2: Add hydrazine hydrate and ammonia water to the evenly stirred solution and stir evenly; A3: Place the reaction kettle containing the solution in an oven for reaction. After the reaction is completed, pour the solution in the reaction kettle into a centrifuge tube, and obtain tellurene powder mixed with two-dimensional layered structure and one-dimensional structure through centrifugation, washing, and drying; A4: Put the obtained tellurene powder into a ball mill or a sand mill and grind to obtain low-dimensional tellurium powder; The preparation of the low-dimensional tellurium dielectric sensitive layer includes the following steps: B1: Take the low-dimensional tellurium powder and put it into a container, and pour in an organic solvent; B2: Disperse it ultrasonically with a cell crusher; B3: Put the mixture into a polymer, stir evenly mechanically, then heat the mixture to evaporate the solvent, and continue to stir the mixture; B4: Coat the mixture onto a glass slide with a film coater and cure it in an oven; B5: After taking the sample out of the oven, peel the film from the glass slide to obtain a low-dimensional tellurium dielectric sensitive layer; The preparation of the capacitive pressure sensor based on the low-dimensional tellurium network includes the following steps: C1: Use micro-nano processing technology to prepare two symmetrical capacitive electrodes on a flexible substrate, and then fold the flexible substrate in half so that the two capacitive electrodes are symmetrically arranged up and down to obtain a first electrode layer and a second electrode layer; C2: Cut the low-dimensional tellurium dielectric sensitive material into a specified shape and place it on the flexible substrate so that it can cover the capacitive electrodes of the first electrode layer and the second electrode layer; C3: Package the folded first electrode layer and the second electrode layer to prepare a capacitive pressure sensor based on a low-dimensional tellurium network.

2. The preparation method of a capacitive pressure sensor based on a low-dimensional tellurium network according to claim 1, characterized in that: In step A1, the mass ratio of sodium tellurite powder to polyvinylpyrrolidone is 1 g:(5.3 - 5.5) g.

3. The preparation method of a capacitive pressure sensor based on a low-dimensional tellurium network according to claim 2, characterized in that: In step A1, the mass ratio of sodium tellurite powder to polyvinylpyrrolidone is 1 g:5.4 g.

4. The preparation method of a capacitive pressure sensor based on a low-dimensional tellurium network according to claim 1, characterized in that: In step A1, the solvent is deionized water, and the mass-volume ratio of polyvinylpyrrolidone to the solvent is 1 g:66 mL, and the magnetic stirring time is 15 minutes.

5. The preparation method of a capacitive pressure sensor based on a low-dimensional tellurium network according to claim 1, characterized in that: In step A2, the ratio of hydrazine hydrate to ammonia water is 1:2, and the ratio of hydrazine hydrate to the solvent is 1:

20.

6. The preparation method of a capacitive pressure sensor based on a low-dimensional tellurium network according to claim 1, characterized in that: In step A3, the reaction time in the oven is 35 - 45 hours, and the reaction temperature is 180 °C; the centrifugation speed is 10000 - 15000 rpm, and the centrifugation time is 5 minutes; the organic solvent used for washing is acetone or isopropyl alcohol, the addition amount is 30 ml, and the washing times are 3 - 5 times; the drying time is 12 hours, and the drying temperature is 80 °C.

7. The preparation method of a capacitive pressure sensor based on a low-dimensional tellurium network according to claim 6, wherein: In step A3, the reaction time in the oven is 40 hours, and the centrifugation speed is 12500 rpm.

8. The preparation method of a capacitive pressure sensor based on a low-dimensional tellurium network according to claim 1, characterized in that: In step B2, the ultrasonic dispersion time with a cell crusher is 30 minutes.

9. The preparation method of a capacitive pressure sensor based on a low-dimensional tellurium network according to claim 1, characterized in that: The polymer in step B3 is polydimethylsiloxane or polyvinylidene fluoride or thermoplastic polyurethane elastomer rubber. The stirring time before heating is 20 minutes, and the stirring time after heating is 30 minutes.

10. A capacitive pressure sensor based on a low-dimensional tellurium network, characterized in that: Prepared by using the preparation method of a capacitance pressure sensor based on a low-dimensional tellurium network according to any one of claims 1 to 9, comprising a first electrode layer, a second electrode layer, and a low-dimensional tellurium dielectric sensitive material layer. Capacitance electrodes are provided on both the first electrode layer and the second electrode layer. The first electrode layer and the second electrode layer are obtained by folding a same flexible substrate in half, and the capacitance electrodes of the two are made symmetrical. The low-dimensional tellurium dielectric sensitive material layer is disposed between the two capacitance electrodes, and the first electrode layer and the second electrode layer are encapsulated.

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