Control device, film forming device, control method, and method for manufacturing electronic device

Abstract

The present application relates to a control device, a film forming device, a control method, and a manufacturing method of an electronic device, and provides a technology for preventing failure of film forming processing caused by poor adsorption and poor peeling of a substrate. The control device of the film forming device is a control device of a film forming device provided with an electrostatic chuck, a voltage supply member, and a measurement member, the electrostatic chuck includes a plurality of adsorption portions and adsorbs a substrate, the voltage supply member is provided for each adsorption portion and applies a voltage to an electrode provided in the adsorption portion, and the measurement member is provided for each adsorption portion and measures an electrostatic capacitance between the electrode provided in the adsorption portion and a conductor, characterized in that the control device of the film forming device is provided with a control member that controls the voltage applied to the electrodes of the plurality of adsorption portions by the voltage supply member based on the measurement result of the measurement member.

Description

Technical Field

[0001] This invention relates to a control device, a film-forming device, a control method, and a method for manufacturing electronic devices. Background Technology

[0002] In the manufacture of organic EL display panels, a film is formed on a substrate by vapor deposition using a mask. The film formation process is sometimes performed while the substrate is attached to an electrostatic chuck. It is known to incorporate an electrostatic capacitive sensor (Patent Documents 1 and 2) to determine whether the substrate is properly attached to the electrostatic chuck during the attachment process.

[0003] Prior art literature

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2017-195351

[0006] Patent Document 2: Japanese Patent Application Publication No. 2020-070493 Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] If film deposition is performed when the substrate is not sufficiently adhered to by the electrostatic chuck, the film deposition accuracy may be reduced. For example, a so-called "film blurring" may occur, where the film is not deposited according to the shape and size of the opening provided in the mask. In addition, if the substrate is handled for subsequent processing while the electrostatic chuck is not sufficiently separated from the substrate, the substrate may be damaged due to contact with the handling equipment, electrostatic chuck, etc.

[0009] This invention provides a technique to prevent problems caused by processing a substrate when the electrostatic chuck is not sufficiently adsorbed or peeled off from the substrate.

[0010] Methods for solving problems

[0011] According to one aspect of the present invention, a control device is provided, which is a control device for a film-forming apparatus comprising an electrostatic chuck, a voltage supply component, and a measuring component. The electrostatic chuck includes a plurality of adsorption portions and adsorbs a substrate. The voltage supply component is provided for each of the adsorption portions and applies a voltage to the electrodes of the adsorption portions. The measuring component is provided for each of the adsorption portions and measures the electrostatic capacitance between the electrodes of the adsorption portions and the conductor. The control device is characterized in that it includes a control component that controls the voltage applied by the voltage supply component to the electrodes of the plurality of adsorption portions based on the measurement results of the measuring component.

[0012] Furthermore, according to one aspect of the present invention, a film-forming apparatus is provided, characterized in that the film-forming apparatus comprises: an electrostatic chuck including a plurality of adsorption portions and adsorbing a substrate; a film-forming component performing film formation on the substrate adsorbed on the electrostatic chuck; a voltage supply component disposed according to each of the adsorption portions and applying a voltage to an electrode disposed on the adsorption portion; a measuring component disposed according to each of the adsorption portions and measuring the electrostatic capacitance of the electrode disposed on the adsorption portion; and a control component controlling the voltage applied by the voltage supply component to the electrodes of the plurality of adsorption portions based on the measurement result of the measuring component.

[0013] Furthermore, according to one aspect of the present invention, a control method is provided, which is a control method for a control device of a film-forming apparatus comprising an electrostatic chuck, a voltage supply component, and a measuring component. The electrostatic chuck includes a plurality of adsorption portions and adsorbs a substrate. The voltage supply component is provided for each of the adsorption portions and applies a voltage to the electrodes provided in the adsorption portions. The measuring component is provided for each of the adsorption portions and measures the electrostatic capacitance of the electrodes provided in the adsorption portions. The control method is characterized in that the control step includes a control step in which the voltage applied by the voltage supply component to the electrodes of the plurality of adsorption portions is controlled based on the measurement results of the measuring component.

[0014] The effects of the invention

[0015] According to the present invention, errors caused by processing the substrate when the electrostatic chuck is not sufficiently adsorbed or peeled off from the substrate can be prevented. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of a part of an electronic device production line.

[0017] Figure 2 This is a schematic diagram of a film-forming apparatus according to one embodiment.

[0018] Figure 3 This is an explanatory diagram of the substrate support unit and the adsorption plate.

[0019] Figure 4 This is a diagram illustrating an example of the hardware structure of a film-forming apparatus.

[0020] Figure 5 This is a flowchart illustrating an example of the manufacturing process of a film-forming apparatus.

[0021] Figure 6 yes Figure 5 The flowchart illustrates the state of the film-forming apparatus in each process step.

[0022] Figure 7 (A) is a schematic diagram showing the relationship between the electrostatic chuck and the substrate when the electrostatic chuck adsorbs the substrate, and (B) is a diagram showing an example of a conductive film pattern formed on the substrate.

[0023] Figure 8 This is a flowchart illustrating a processing example of the processing unit in the adsorption process.

[0024] Figure 9 This is a graph showing the relationship between the applied voltage and electrostatic capacitance during the adsorption process.

[0025] Figure 10 This is a flowchart illustrating a processing example of the processing unit in the stripping process.

[0026] Figure 11 This is a graph showing the relationship between the applied voltage and electrostatic capacitance during the stripping process.

[0027] Figure 12 This is a diagram showing the applied voltage during reverse voltage removal.

[0028] Figure 13 (A) is an overall view of an organic EL display device, and (B) is a view showing the cross-sectional structure of a pixel.

[0029] Explanation of reference numerals in the attached figures

[0030] 1. Film forming apparatus, 5. Mask stage, 6. Substrate support unit, 141. Processing unit, 15. Electrostatic chuck, 151. Electrode unit, 16. Detection unit, 100. Substrate, 101. Mask. Detailed Implementation

[0031] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Furthermore, the following embodiments do not limit the technical solutions of the claims. Although multiple features are described in the embodiments, not all of these features are necessarily essential to the invention, and multiple features can be arbitrarily combined. Moreover, in the drawings, the same or identical structures are labeled with the same reference numerals, and repeated descriptions are omitted.

[0032] <Production Line of Electronic Components>

[0033] Figure 1 This is a schematic diagram showing a portion of the structure of an electronic device production line to which the film-forming apparatus of the present invention can be applied. Figure 1 In production lines, for example, for manufacturing display panels for organic EL display devices used in smartphones, substrate 100 is sequentially transported to film deposition module 301, and organic EL elements are deposited on substrate 100.

[0034] In the film-forming module 301, a plurality of film-forming chambers 303a to 303d for film-forming the substrate 100 and a mask storage chamber 305 for storing the mask before and after use are arranged around a transport chamber 302, which has an octagonal shape when viewed from above. A transport robot 302a for transporting the substrate 100 is arranged in the transport chamber 302. The transport robot 302a includes a hand that holds the substrate 100 and a multi-joint arm that moves the hand in the horizontal direction. In other words, the film-forming module 301 is a cluster-type film-forming unit in which a plurality of film-forming chambers 303a to 303d are arranged around the transport robot 302a. Furthermore, when referring to the film-forming chambers 303a to 303d collectively or without distinction, they are referred to as film-forming chamber 303.

[0035] Along the transport direction (arrow direction) of the substrate 100, a buffer chamber 306, a rotary chamber 307, and a transfer chamber 308 are respectively arranged on the upstream and downstream sides of the film deposition module 301. During manufacturing, each chamber is maintained in a vacuum state. Furthermore, in Figure 1 Only one film-forming module 301 is illustrated, but the production line of this embodiment has multiple film-forming modules 301, which are connected by a connecting device consisting of a buffer chamber 306, a rotary chamber 307, and a transfer chamber 308. Furthermore, the structure of the connecting device is not limited to this; for example, it may consist of only the buffer chamber 306 or the transfer chamber 308.

[0036] The transport robot 302a performs the following operations: moving the substrate 100 from the upstream transfer chamber 308 to the transport chamber 302; transporting the substrate 100 between the film forming chambers 303; transporting the mask between the mask storage chamber 305 and the film forming chamber 303; and moving the substrate 100 from the transport chamber 302 to the downstream buffer chamber 306.

[0037] The buffer chamber 306 is a chamber used to temporarily store the substrates 100 according to the operating conditions of the production line. The buffer chamber 306 is equipped with a substrate storage shelf, also referred to as a box, and a lifting mechanism. The substrate storage shelf has a multi-layer structure capable of storing multiple substrates 100 while maintaining a horizontal state with the processed surface (film-forming surface) of the substrate 100 facing downwards in the direction of gravity. The lifting mechanism raises and lowers the substrate storage shelf to match the layer into which the substrates 100 are moved or removed with the transport position. Thus, multiple substrates 100 can be temporarily stored and held in the buffer chamber 306.

[0038] The rotary chamber 307 is equipped with a device for changing the orientation of the substrate 100. In this embodiment, the rotary chamber 307 rotates the orientation of the substrate 100 by 180 degrees using a transport robot provided in the rotary chamber 307. The transport robot provided in the rotary chamber 307 rotates 180 degrees while supporting the substrate 100 received from the buffer chamber 306 and delivers it to the transfer chamber 308, thereby exchanging the front and rear ends of the substrate in the buffer chamber 306 and the transfer chamber 308. As a result, the orientation of the substrate 100 when it is moved into the film deposition chamber 303 is the same in each film deposition module 301, thus making the scanning direction of the evaporation source relative to the substrate 100 and the orientation of the mask consistent in each film deposition module 301. With such a structure, the orientation of the mask placed in the mask storage chamber 305 in each film deposition module 301 can be consistent, simplifying mask management and improving usability.

[0039] The production line control system includes a host device 300 that controls the entire production line as the main unit, and control devices 14a-14d, 309, and 310 that control various structures. These devices can communicate via wired or wireless communication line 300a. Control devices 14a-14d are provided corresponding to film-forming chambers 303a-303d and control the film-forming apparatus 1, which will be described later. Furthermore, control devices 14a-14d are referred to collectively, or, if no distinction is made, as control device 14.

[0040] Control device 309 controls the handling robot 302a. Control device 310 controls the device in the rotary chamber 307. The host device 300 sends information related to the substrate 100, handling timing, and other instructions to each control device 14, 309, and 310. Each control device 14, 309, and 310 controls its respective structure based on the received instructions.

[0041] <Overview of the film-forming device>

[0042] Figure 2This is a schematic diagram of a film-forming apparatus 1 according to one embodiment. The film-forming apparatus 1, provided in the film-forming chamber 303, is an apparatus for forming a film of vapor-deposited material on a substrate 100, forming a thin film of vapor-deposited material with a predetermined pattern via a mask 101. The material of the substrate 100 used for film formation by the film-forming apparatus 1 can be appropriately selected from materials such as glass, resin, and metal, and preferably a material on which a resin layer such as polyimide is formed. The vapor-deposited material can be organic materials, inorganic materials (metals, metal oxides, etc.), etc. The film-forming apparatus 1 can be applied, for example, to manufacturing apparatuses for electronic devices and optical components such as display devices (flat panel displays, etc.), thin-film solar cells, and organic photoelectric conversion elements (organic thin-film imaging elements), and is particularly applicable to manufacturing apparatuses for organic EL panels. In the following description, an example of film formation on a substrate 100 by vacuum vapor deposition using the film-forming apparatus 1 will be described, but this embodiment is not limited to this and can also be applied to various film-forming methods such as sputtering or CVD. In addition, in each figure, arrow Z represents the up-down direction (the direction of gravity), and arrows X and Y represent mutually orthogonal horizontal directions.

[0043] The film-forming apparatus 1 has a box-shaped vacuum chamber 3 (also simply referred to as a chamber) capable of maintaining an internal vacuum. The internal space 3a of the vacuum chamber 3 is maintained in a vacuum environment or an inert gas environment such as nitrogen. In this embodiment, the vacuum chamber 3 is connected to a vacuum pump (not shown). Furthermore, in this specification, "vacuum" refers to a state filled with a gas at a pressure lower than atmospheric pressure; in other words, it refers to a depressurization state. Inside the internal space 3a of the vacuum chamber 3, there are a substrate support unit 6 that supports the substrate 100 in a horizontal orientation, a mask stage 5 that supports the mask 101, a film-forming unit 4, a plate unit 9, and an electrostatic chuck 15. The mask 101 is a metal mask having an opening pattern corresponding to the thin film pattern formed on the substrate 100, and is placed on the mask stage 5. Furthermore, the mask stage 5 can be replaced with other components that fix the mask 101 in a predetermined position. As the mask 101, a mask having a structure in which a mask foil with a thickness of about a few μm to tens of μm is welded and fixed on a frame-shaped mask frame can be used. The material of the mask 101 is not particularly limited; for example, a metal with a low coefficient of thermal expansion, such as Invar alloy, can also be used. The film formation process is performed with the substrate 100 placed on the mask 101 and the substrate 100 and the mask 101 overlapping each other.

[0044] The plate unit 9 includes a cooling plate 10 and a magnet plate 11. The cooling plate 10 is suspended below the magnet plate 11 in a manner that allows it to be displaced relative to the magnet plate 11 in the Z direction. The cooling plate 10 has the function of cooling the substrate 100, which is adsorbed onto the electrostatic chuck 15 during film formation, by contacting it during film formation. The cooling plate 10 is not limited to actively cooling the substrate 100 by having a water cooling mechanism or the like; it can also be a plate-shaped member that absorbs heat from the substrate 100 by contacting the electrostatic chuck 15 even without a water cooling mechanism or the like. The magnet plate 11 is a plate that attracts the mask 101 by magnetic force and is placed above the substrate 100, thereby improving the adhesion between the substrate 100 and the mask 101 during film formation.

[0045] Furthermore, the cooling plate 10 and the magnet plate 11 can be omitted appropriately. For example, if the cooling mechanism is provided in the electrostatic chuck 15, the cooling plate 10 may not be necessary. Additionally, if the electrostatic chuck 15 adsorbs the mask 101, the magnet plate 11 may also be omitted.

[0046] The film-forming unit 4, comprising a heater, baffles, a drive mechanism for the evaporation source, and an evaporation rate monitor, is a deposition source for depositing the vapor-deposited material onto the substrate 100. More specifically, in this embodiment, the film-forming unit 4 is a linear evaporation source in which multiple nozzles (not shown) are arranged in the X direction and discharge vapor-deposited material from each nozzle. For example, the linear evaporation source reciprocates in the Y direction (depth direction of the device) via an evaporation source moving mechanism (not shown). In this embodiment, the film-forming unit 4 is disposed in the vacuum chamber 3 where the alignment process described later is performed. However, in embodiments where the film-forming process is performed using a different chamber than the vacuum chamber 3 where alignment is performed, the film-forming unit 4 is not disposed in the vacuum chamber 3.

[0047] Apart from Figure 2 In addition, refer to Figure 3 Please provide an explanation. Figure 3 This is an explanatory diagram of the substrate support unit 6 and the electrostatic chuck 15, and it is a view of them from below.

[0048] The substrate support unit 6 supports the peripheral portion of the substrate 100. The substrate support unit 6 includes multiple base portions 61a to 61d forming its outer frame and multiple mounting portions 62 and 63 protruding inward from the base portions 61a to 61d. Furthermore, the mounting portions 62 and 63 are sometimes referred to as "receiving claws" or "finger-like members." The base portions 61a to 61d are each supported by a support shaft R3. The multiple mounting portions 62 are spaced apart on the base portions 61a to 61d, receiving the long side of the peripheral portion of the substrate 100. Additionally, the multiple mounting portions 63 are spaced apart on the base portions 61a to 61d, receiving the short side of the peripheral portion of the substrate 100. The substrate 100, which is moved into the film forming apparatus 1 by the handling robot 302a, is supported by the multiple mounting portions 62 and 63. Hereinafter, the base portions 61a to 61d will be referred to collectively or, without distinction, as base portion 61.

[0049] In this embodiment, the plurality of mounting portions 62 and 63 are composed of leaf springs. When the substrate 100 supported by the plurality of mounting portions 62 and 63 is adsorbed onto the electrostatic chuck 15, the periphery of the substrate 100 can be pressed against the electrostatic chuck 15 by the elastic force of the leaf springs.

[0050] In addition, Figure 3 In the example, four base portions 61 form a rectangular frame with partial cutouts, but this is not a limitation; the base portions 61 can also be seamless rectangular frames surrounding the outer periphery of the rectangular substrate 100. However, by using multiple base portions 61 with cutouts, the transport robot 302a can avoid the base portions 61 and retreat when handing over the substrate 100 to the mounting portions 62 and 63. This improves the efficiency of transporting and handing over the substrate 100.

[0051] Alternatively, a plurality of clamping portions may be provided in the substrate support unit 6 corresponding to the plurality of mounting portions 62 and 63, and the peripheral portion of the substrate 100 mounted on the mounting portions 62 and 63 may be clamped and held by the clamping portions.

[0052] An electrostatic chuck 15 adsorbs the substrate 100. In this embodiment, the electrostatic chuck 15 is disposed between the substrate support unit 6 and the plate unit 9 and is supported by one or more support shafts R1. In this embodiment, the electrostatic chuck 15 is supported by four support shafts R1. In one embodiment, the support shafts R1 are cylindrical shafts.

[0053] The electrostatic chuck 15 is constructed, for example, by embedding circuitry such as metal electrodes within a ceramic substrate (also referred to as the substrate). The surface of the electrostatic chuck 15 can be polyimide (resin) or anodized aluminum. In this embodiment, the electrostatic chuck 15 has multiple electrode portions 151. Each electrode portion 151 includes an electrode 1511 to which a positive (+) voltage is applied and an electrode 1512 to which a negative (-) voltage is applied. When a voltage is applied to the electrodes 1511 and 1512, polarized charges are guided to the substrate 100 through the ceramic substrate, and the substrate 100 is adsorbed and fixed to the adsorption surface 150 of the electrostatic chuck 15 by the electrostatic attraction (electrostatic force) between the substrate 100 and the electrostatic chuck 15. In other words, the electrode portions 151 function as adsorption portions for adsorbing the substrate 100.

[0054] In this embodiment, electrodes 1511 and 1512 each have comb-shaped metal members, and the comb-shaped portions are alternately arranged in an interlaced structure. However, the structure of the electrode portion 151 can be appropriately set, as long as electrostatic attraction can be generated between it and the substrate 100, which is the adsorbed object. Furthermore, the shape and number of electrode portions 151 can also be appropriately changed. In this embodiment, as... Figure 3 As shown, the electrode section 151 is arranged in a 3×3 matrix.

[0055] In addition, multiple openings 152 are formed in the electrostatic chuck 15. By having the measurement units (first measurement unit 7 and second measurement unit 8 described later) take pictures of the alignment marks described later through the multiple openings 152, information related to the relative positional relationship between the substrate 100 and the mask 101 can be obtained.

[0056] The position adjustment unit 20 adjusts the relative position of the substrate 100, whose peripheral portion is supported by the substrate support unit 6, or the substrate 100 adsorbed by the electrostatic chuck 15, with the mask 101. The position adjustment unit 20 adjusts the relative position of the substrate 100 with respect to the mask 101 by displacing the substrate support unit 6 or the electrostatic chuck 15 in the XY plane. That is, the position adjustment unit 20 can also be described as a unit that adjusts the horizontal positional relationship between the mask 101 and the substrate 100. For example, the position adjustment unit 20 can displace the substrate support unit 6 in the X and Y directions and rotate it about the Z-axis. In this embodiment, the position of the mask 101 is fixed and the substrate 100 is displaced to adjust their relative position. However, adjustment can be performed by displacing the mask 101, or by displacing both the substrate 100 and the mask 101. For example, the position adjustment unit 20 can also use a known structure such as a motor as a drive source and a ball screw mechanism that converts the motor's driving force into linear motion to displace the substrate support unit 6.

[0057] The distance adjustment unit 22 adjusts the distance between the electrostatic chuck 15 and the substrate support unit 6 and the mask stage 5 by raising and lowering them, so that the substrate 100 and the mask 101 approach and separate (move away) in the thickness direction (Z direction) of the substrate 100. In this embodiment, the distance adjustment unit 22 includes a first lifting plate 220 that supports the electrostatic chuck 15 via multiple support shafts R1 and supports the substrate support unit 6 via multiple support shafts R3. The distance adjustment unit 22 raises and lowers the electrostatic chuck 15 and the substrate support unit 6 by raising and lowering the first lifting plate 220. That is, the distance adjustment unit 22 makes the substrate 100 and the mask 101 approach each other in the overlapping direction or separate them in the opposite direction. Furthermore, the "distance" adjusted by the distance adjustment unit 22 is the so-called vertical distance (or vertical distance), and the distance adjustment unit can also be described as a unit that adjusts the vertical position of the mask 101 and the substrate 100. For example, the position adjustment unit 20 can also use a known structure such as a motor as a drive source and a ball screw mechanism that converts the driving force of the motor into linear motion to displace the first lifting plate 220. In addition, the distance adjustment unit 22 includes an actuator 65 that moves the substrate support unit 6 relative to the first lifting plate 220, thereby changing the relative position of the substrate support unit 6 relative to the electrostatic chuck 15.

[0058] Furthermore, the distance adjustment unit 22 of this embodiment fixes the position of the mask stage 5 and moves the substrate support unit 6 and the electrostatic chuck 15 to adjust their distance in the Z direction, but it is not limited to this. The position of the substrate support unit 6 or the electrostatic chuck 15 can be fixed and the mask stage 5 moved for adjustment, or each of the substrate support unit 6, the electrostatic chuck 15, and the mask stage 5 can be moved to adjust their distance from each other.

[0059] The plate unit lifting unit 13 lifts and lowers the plate unit 9, which is connected to the second lifting plate 12 and disposed inside the vacuum chamber 3, by lifting and lowering the second lifting plate 12 disposed outside the vacuum chamber 3. The plate unit 9 is connected to the second lifting plate 12 via one or more support shafts R2. In this embodiment, the plate unit 9 is supported by two support shafts R2. The support shafts R2 extend upward from the magnet plate 11 and are connected to the second lifting plate 12 through the openings of the upper wall portion 30, the openings of the fixed plate 20a and the movable plate 20b, and the opening of the first lifting plate 220. For example, the position adjustment unit 20 may also use a known structure such as a motor as a drive source and a ball screw mechanism that converts the driving force of the motor into linear motion to displace the second lifting plate 12.

[0060] The opening of the upper wall portion 30 of the vacuum chamber 3 through which the aforementioned support shafts R1 to R3 pass has a size that allows each support shaft R1 to R3 to move in the X and Y directions. In order to maintain the airtightness of the vacuum chamber 3, a bellows or the like is provided at the opening of the upper wall portion 30 through which each support shaft R1 to R3 passes.

[0061] The measuring units (first measuring unit 7 and second measuring unit 8) measure the positional offset between the mask 101 and the substrate 100 whose peripheral portion is supported by the substrate support unit 6. In this embodiment, both the first measuring unit 7 and the second measuring unit 8 are imaging devices (cameras) for capturing images. The first measuring unit 7 and the second measuring unit 8 are disposed above the upper wall portion 30 and are capable of capturing images of the vacuum chamber 3 through a window (not shown) formed in the upper wall portion 30.

[0062] In this embodiment, alignment marks for aligning the substrate 100 and the mask 101 are formed respectively. Furthermore, coarse alignment marks for making approximate position adjustments and fine alignment marks for making more precise position adjustments are provided on the substrate 100 and the mask 101 respectively.

[0063] The first measurement unit 7 is a low-magnification CCD camera (coarse camera) with a relatively wide field of view but low resolution, which measures the approximate positional offset between the substrate 100 and the mask 101. For example, two first measurement units 7 are provided so as to take pictures of coarse alignment marks respectively set near the center of the short side of the substrate 100 and the mask 101 through the opening 152.

[0064] The second measurement unit 8 is a high-magnification CCD camera (fine camera) with a relatively narrow field of view but high resolution (e.g., on the order of a few μm), which measures the positional offset between the substrate 100 and the mask 101 with high precision. For example, four second measurement units 8 are provided so as to capture images of fine alignment marks respectively set at the four corners of the substrate 100 and the mask 101 through the opening 152.

[0065] In this embodiment, after the approximate position adjustment of the substrate 100 and the mask 101 is performed based on the measurement results of the first measurement unit 7, the precise position adjustment of the substrate 100 and the mask 101 is performed based on the measurement results of the second measurement unit 8.

[0066] <Hardware Structure>

[0067] Figure 4 This is a diagram showing an example of the hardware structure of the film-forming apparatus 1. Furthermore, Figure 4 The diagram is centered on the structure related to the features of this embodiment, and some parts of the structure are omitted.

[0068] The control device 14 controls the entire film-forming apparatus 1. The control device 14 includes a processing unit 141, a storage unit 142, an input / output interface (I / O) 143, and a communication unit 144. The processing unit 141 is a processor, such as a CPU, that executes programs stored in the storage unit 142 to control the film-forming apparatus 1. The storage unit 142 is a storage device such as ROM, RAM, or HDD, which stores various control information in addition to the programs executed by the processing unit 141. The I / O 143 is the interface for transmitting and receiving signals between the processing unit 141 and the various components of the film-forming apparatus 1. The communication unit 144 is a communication device that communicates with the host device 300 or other control devices 14, 309, 310, etc., via the communication line 300a. The processing unit 141 receives information from or sends information to the host device 300 via the communication unit 144. Furthermore, all or part of the control device 14 and the host device 300 may also be composed of a PLC, ASIC, or FPGA.

[0069] The power supply unit 17 is a power supply circuit that receives power from an external power source 90, such as an AC power source, and converts it into a specified power. In this embodiment, the power supply unit 17 includes a plurality of power supplies 171, each corresponding to a plurality of electrode sections 151. The power supply 171 is an example of a voltage supply member that operates to apply a specified DC voltage to the electrode sections 151 based on an instruction from the processing unit 141.

[0070] The detection unit 16 is an example of a measuring component that detects the electrostatic capacitance of the electrode portion 151 of the electrostatic chuck 15. In this embodiment, the detection unit 16 includes multiple detectors 161, each corresponding to a plurality of electrode portions 151. That is, in this embodiment, multiple groups of electrode portions 151, detectors 161, and power supply 171 are provided. Furthermore, in this embodiment, the detection unit 16 is disposed outside the chamber 3.

[0071] In this embodiment, the detection unit 16 does not require the separate provision of electrodes for electrostatic capacitance detection on the electrostatic chuck 15 for detecting the electrostatic capacitance of the electrode portion 151 of the electrostatic chuck 15. As a result, the arrangement area of ​​the electrode portion 151 of the electrostatic chuck 15 can be ensured to be wider, thereby improving the adsorption force of the electrostatic chuck 15.

[0072] In this embodiment, the processing unit 141 determines the adsorption state of the substrate 100 performed by the electrostatic chuck 15 based on the measurement results of the detection unit 16. When the voltage applied to the electrode portion 151 by the power supply 171 is constant, the electrostatic capacitance between the electrode portion 151 and the substrate 100 depends on the electrode portion 151 and the conductive film pattern formed on the substrate 100 (see reference). Figure 7The electrostatic capacitance between the electrode portion 151 and the substrate 100 varies depending on the distance between them (A, etc.). Therefore, during the adsorption of the substrate 100, the electrostatic capacitance between the electrode portion 151 and the substrate 100 increases as the distance between them decreases. On the other hand, when the substrate 100 is adsorbed onto the electrostatic chuck 15 and the distance between the substrate 100 and the electrode portion 151 no longer changes, the electrostatic capacitance takes a constant value. Therefore, after the processing unit 141 applies voltage to the power supply unit 17, if the measured value is smaller than a predetermined value, compared to the case where the substrate 100 is adsorbed normally, it can determine that the distance between the substrate 100 and the electrode portion 151 is large, i.e., the substrate 100 is not adsorbed normally. In addition, after the processing unit 141 stops applying voltage to the power supply unit 17, if the measured value is larger than a predetermined value, compared to the case where the substrate 100 is normally peeled off from the electrostatic chuck 15, it can determine that the distance between the substrate 100 and the electrode portion 151 is small, i.e., the substrate 100 is not peeled off normally.

[0073] In addition, in this embodiment, as described later, the processing unit 141 is an example of a control unit that controls the voltage value of the voltage applied by the power supply unit 17 to the plurality of electrode portions 151 or the timing of the power supply unit 17 applying voltage to the plurality of electrode portions 151 based on the detection result of the detection unit 16.

[0074] <Manufacturing process of film-forming device>

[0075] Figure 5 This is a flowchart illustrating an example of the manufacturing process of the film-forming apparatus 1. This flowchart shows a general outline of the processes performed by the film-forming apparatus 1 on a substrate 100. Furthermore, Figure 6 This is an explanatory diagram illustrating the state of film-forming device 1 in each process.

[0076] Step S1 (hereinafter referred to as S1, and the same applies to other steps) is the loading process. In this process, the substrate 100 is loaded into the film forming apparatus 1 using the handling robot 302a. The loaded substrate 100 is supported by the substrate support unit 6 (state ST100).

[0077] S2 is the adsorption process. For example, the processing unit 141 raises the substrate support unit 6 of the substrate 100 to a predetermined position (state ST101). Here, in state ST101, the peripheral portion of the substrate 100 supported by the substrate support unit 6 is in contact with or slightly away from the electrostatic chuck 15. On the other hand, since the central portion of the substrate 100 will flex due to its own weight, it is located further away from the electrostatic chuck 15 compared to the peripheral portion. The processing unit 141 generates an adsorption force by applying voltage to the electrode portion 151 using the power supply unit 17 in state ST101, causing the electrostatic chuck 15 to adsorb the substrate 100 (state ST102).

[0078] S3 is the alignment process. The processing unit 141 uses the distance adjustment unit 22 to lower the electrostatic chuck 15 on which the substrate 100 is attached, so that the substrate 100 is close to the mask 101. Then, the position adjustment unit 20 is used to adjust the horizontal position of the substrate 100 and the mask 101 (state ST103).

[0079] S4 is the film deposition process. As preparation, the processing unit 141 brings the aligned substrate 100 into contact with the mask 101. Next, the processing unit 141 lowers the plate unit 9, and the substrate 100 and mask 101 are further brought into close contact by the magnetic force of the magnet plate 11 (state ST104). In this state, the processing unit 141 uses the film deposition unit 4 to deposit a vapor-deposited material onto the substrate 100.

[0080] S5 is the peeling process. The processing unit 141 peels the substrate 100 from the electrostatic chuck 15 by stopping the voltage applied to the electrode 151 (state ST100). Alternatively, the processing unit 141 may reduce the voltage applied to the electrode 151 to a level where the electrostatic chuck 15 can no longer maintain the adhesion of the substrate 100 without stopping the voltage applied to the electrode 151.

[0081] S6 is the removal process. In this process, the substrate 100 is removed to the outside of the film forming apparatus 1 using a handling robot 302a.

[0082] <Adsorption of substrate by electrostatic chuck>

[0083] Figure 7 (A) is a schematic diagram showing the relationship between the electrostatic chuck 15 and the substrate 100 when the electrostatic chuck 15 adsorbs the substrate 100. Figure 7 (B) is a diagram showing an example of a conductive film pattern formed on substrate 100.

[0084] First, the adsorption force on the substrate 100 generated by the electrostatic chuck 15 will be explained. The adsorption force F of the electrostatic chuck 15 is calculated by the following equation (1).

[0085] F=Kε0εV2 / 2r2· · · (1)

[0086] Here, K is a constant resulting from the overlap rate between the electrode pattern of the electrostatic chuck 15 and the conductive film pattern of the substrate 100. Additionally, ε0 ​​is the dielectric constant of vacuum, ε is the dielectric constant of the dielectric layer (the combined dielectric constant of the dielectric layer 153 of the electrostatic chuck 15, the vacuum from the surface of the electrostatic chuck 15 to the substrate adsorption surface, and the substrate thickness), V is the applied voltage based on the power supply 171, and r is the thickness of the dielectric layer. Furthermore, the thickness r of the dielectric layer is the sum of the thickness of the dielectric layer 153 of the electrostatic chuck 15 and the distance from the adsorption surface 150 to the conductive film 1000 of the substrate 100.

[0087] In this embodiment, since the electrode pattern on the electrostatic chuck 15 side is substantially constant, the constant K is determined to be a value corresponding to the conductive film pattern density of the substrate 100. Specifically, the higher the conductive film pattern density of the substrate 100, the larger the constant K becomes. For example, Figure 7 (A) The conductive film pattern density ratio of the conductive film 1000 of the substrate 100 shown Figure 7 (B) The conductive film 1000a of the substrate 100 shown is large. Therefore, Figure 7 The constant K of substrate 100 in (A) is compared to Figure 7 (B) The constant K of substrate 100 is large.

[0088] With the applied voltage V constant, according to equation (1), the larger the constant K, the greater the adsorption force F of the electrostatic chuck 15. The greater the adsorption force F, the shorter the adsorption time from the application of voltage from power source 171 until the substrate 100 is adsorbed onto the electrostatic chuck 15. Therefore, Figure 7 (A) shows the adsorption time of substrate 100 compared to Figure 7 (B) shows a short substrate. In this way, when the applied voltage V is constant, the adsorption time varies accordingly with the type of substrate 100, and more specifically, with the density of the conductive film pattern of substrate 100.

[0089] Furthermore, in the manufacturing process based on the film-forming apparatus 1, the following situation exists: the process plan is managed by starting the next process after a predetermined time has elapsed, based on the start of the adsorption of the substrate 100 by the electrostatic chuck 15. If using... Figure 5 For example, the process plan is managed such that the application of voltage V to the electrode portion 151 of the electrostatic chuck 15 begins in the adsorption process (S2) and the alignment process (S3) begins as the next process after a predetermined time has elapsed. In such cases, when the adsorption time varies depending on the type of substrate 100, the next process may sometimes begin when the adsorption of the substrate 100 by the electrostatic chuck 15 is insufficient.

[0090] If the next process begins when the substrate 100 is not sufficiently adhered to by the electrostatic chuck 15, the film deposition accuracy in the subsequent film deposition process (S4) may be reduced. For example, if the next process is an alignment process, alignment may be performed while the substrate 100 is flexed, which may reduce the alignment accuracy. This reduction in alignment accuracy may affect the film deposition accuracy. Furthermore, if film deposition is performed while the substrate 100 is not sufficiently adhered to by the electrostatic chuck 15, the flexing of the substrate 100 may result in a reduction in film deposition accuracy, such as "film blurring," where the film is not deposited according to the shape and size of the opening provided on the mask.

[0091] Therefore, in this embodiment, by having the structure described below and performing the processing described later, the reduction in film formation accuracy is suppressed.

[0092] <Example 1>

[0093] Figure 8 This is a flowchart illustrating a processing example of the processing unit 141. The flowchart generally refers to the following situation: the voltage applied to the power supply 171 corresponding to the detector 161 is controlled based on the measurement results of the detector 161. Figure 5 This process flow chart is executed in the adsorption process S2.

[0094] In S10, the processing unit 141 controls the power supply 171 and applies the voltage required for adsorption (chuck) of the electrode section 151 to adsorb the substrate. In this embodiment, since multiple power supplies 171 are provided for each of the multiple electrode sections 151, the processing unit 141 applies the adsorption voltage to each electrode section 151, for example. Furthermore, the applied voltage value can be appropriately set; if a different voltage is set for each of the multiple power supplies 171, a different voltage can also be set for each of the multiple power supplies 171.

[0095] In S11, the processing unit 141 obtains the measurement result from the detector 161. For example, the processing unit 141 may also obtain the electrostatic capacitance value detected by the detection unit 16 after a predetermined time has elapsed since the reference voltage VS was applied. For example, as described above, the processing unit 141 may also standby from the start of applying the applied voltage V to the electrode 151 until the electrostatic capacitance value detected by the detection unit 16 becomes constant, and obtain the electrostatic capacitance value after it becomes constant.

[0096] Here, refer to Figure 9 An example of the measurement results of the detector 161 obtained by the processing unit 141 will be explained. Figure 9The relationship between the applied voltage 100a and the electrostatic capacitance value 100b detected by the detection unit 16 and time is shown. For example, based on the measurement results of the detector 161 obtained by the processing unit 141, the processing unit 141 obtains the electrostatic capacitance value at the time point (t=T1) when the applied voltage becomes the reference voltage VS, and the electrostatic capacitance value at the time point (t=T2) after the applied voltage becomes the reference voltage VS. In this embodiment, the electrostatic capacitance value at the time point (t=T2) when the electrostatic capacitance value becomes constant is set as Cm. Furthermore, for multiple detectors 161, the time point at which the electrostatic capacitance value becomes constant may be different for each detector. Therefore, the processing unit 141 may continuously obtain the electrostatic capacitance values ​​detected by multiple detectors 161, and output the electrostatic capacitance value after all the electrostatic capacitance values ​​of multiple detectors 161 have become constant.

[0097] Next, the processing unit 141 proceeds to S12, determining whether the obtained electrostatic capacitance value is greater than a threshold Th1 (first threshold). Threshold Th1 is the electrostatic capacitance value output by the detector 161 under the assumption that the substrate is normally adsorbed. Threshold Th1 can be preset accordingly to the conductive film pattern of the substrate, or it can be a threshold determined based on past measurement results, such as the average value of previously measured electrostatic capacitance values ​​obtained during repeated adsorption processes of the same type of substrate. In another example, the preset threshold can be updated based on the electrostatic capacitance values ​​obtained during repeated adsorption processes of substrates with the same conductive film pattern.

[0098] If the obtained electrostatic capacitance value is smaller than the threshold ("Yes" in S12), that is, if the obtained electrostatic capacitance value is smaller than the value that is presumed to be normally adsorbed, the processing unit 141 causes the processing to proceed to S13 and performs a recovery process.

[0099] In one example, the recovery process performed in S13 could involve reapplying voltage to the electrode 151 corresponding only to the detector 161 that detected an electrostatic capacitance value smaller than a threshold after stopping the application of voltage to that electrode. This allows adsorption of only areas deemed insufficiently adsorbed, even when adsorption is already considered to be occurring in areas where it is expected to be adsorbed normally. Alternatively, the recovery process performed in S13 could involve reapplying voltage after stopping the application of voltage to all electrode 151s. This allows temporary detachment of the electrostatic chuck from the substrate and eliminates substrate deflection during adsorption, enabling normal substrate adsorption.

[0100] Furthermore, the voltage applied again can be the same as or higher than the voltage applied in S10. For example, the voltage applied to the electrode portion 151 corresponding to the detector 161 that detects an electrostatic capacitance value smaller than the threshold can be increased, and the voltage applied to the electrode portion 151 corresponding to the detector 161 that detects an electrostatic capacitance value greater than the threshold can be increased. As a result, it is possible to adsorb the difficult-to-adsorb portions of the substrate with a stronger force.

[0101] In another example, the recovery process performed in S13 could involve removing the substrate 100 from the vacuum chamber 3 and installing a new substrate 100 after stopping the application of voltage to all electrode sections 151. This allows the substrate 100 to be replaced with another substrate even if it is damaged by cracks or fissures, or if foreign matter adheres to it, thus enabling the manufacturing process to continue.

[0102] In another example, the recovery process performed in S13 could involve interrupting the manufacturing process after stopping the application of voltage to all electrode sections 151. Furthermore, the processing unit 141 could also notify the operator of at least one abnormal termination of the manufacturing process, either by requesting the operator to stop the process or by requesting cleaning of the electrostatic chuck, via I / O 143 or communication unit 144 and via a notification unit. Thus, even if a foreign object adheres to the electrostatic chuck 15 and the manufacturing process terminates abnormally, and the notification unit notifies the operator of the abnormal termination, the foreign object can be removed and the manufacturing process can be restarted. Additionally, during notification, the position of the electrode section 151 within the electrostatic chuck corresponding to the detector 161 that detected an electrostatic capacitance value smaller than a threshold value can also be displayed.

[0103] Furthermore, the above-described recovery processes can be combined arbitrarily. For example, if the electrostatic capacitance value obtained after reapplying voltage to all electrode sections 151 three times (or a predetermined number of times) is less than a threshold, the substrate 100 can be removed from the vacuum chamber 3 after the voltage application to all electrode sections 151 is stopped. Alternatively, if any of the electrostatic capacitance values ​​measured after removing the substrate 100 from the vacuum chamber 3 and replacing the substrate 100 after stopping the voltage application to all electrode sections 151 are less than a threshold, the manufacturing process can be interrupted after the voltage application to the electrode sections 151 is stopped.

[0104] Furthermore, the thresholds used to determine whether to perform the above-mentioned recovery process can be different from each other. For example, if the obtained electrostatic capacitance value is smaller than a first threshold, voltage can be reapplied to all electrode sections 151; if the obtained electrostatic capacitance value is smaller than a second threshold (which is smaller than the first threshold), the substrate can be replaced after stopping the application of voltage to all electrode sections 151. Thus, it is possible to switch between recovery processes performed according to the magnitude of the deviation between the expected electrostatic capacitance value and the measured electrostatic capacitance value.

[0105] As explained above, according to this processing example, since insufficient adsorption of the substrate is detected and a recovery process is performed based on the measurement results of multiple detectors 161 when the substrate is adsorbed onto the electrostatic chuck, problems caused by performing the manufacturing process in a state where the adsorption between the electrostatic chuck and the substrate is insufficient can be prevented.

[0106] <Example 2>

[0107] Figure 10 This is a flowchart illustrating a processing example of the processing unit 141. The flowchart essentially refers to a situation where the voltage applied to the power supply 171 corresponding to the detector 161 during dechucking is controlled independently based on the measurement results from the detector 161. This flowchart is, for example, shown as... Figure 5 The S5 process is used for execution.

[0108] In S21, the processing unit 141 controls the power supply 171 and stops applying voltage to the electrode section 151. In this processing example, since multiple power supplies 171 are provided for each of the multiple electrode sections 151, the processing unit 141, for example, stops applying voltage to each electrode section 151 simultaneously.

[0109] Next, in S22, the processing unit 141 obtains the measurement result from the detector 161. For example, the processing unit 141 may obtain the electrostatic capacitance value detected by the detection unit 16 after a predetermined time has elapsed since the application of the stop voltage. For example, as described above, the processing unit 141 may also standby from the time the application of voltage to the electrode 151 stops until the electrostatic capacitance value detected by the detection unit 16 becomes constant, and then obtain the electrostatic capacitance value after it becomes constant.

[0110] Here, refer to Figure 11 An example of the measurement results of the detector 161 obtained by the processing unit 141 will be explained. Figure 11The diagram illustrates the relationship between the applied voltage 110a and the electrostatic capacitance value 110b detected by the detection unit 16 and time. For example, based on the measurement results of the detector 161, the processing unit 141 obtains the electrostatic capacitance value at the time point when the applied voltage becomes 0 (t = T3), the electrostatic capacitance value at the time point when the electrostatic capacitance value becomes constant after the applied voltage becomes 0 (t > T3) (t = T4), and the electrostatic capacitance value before the application of the stop voltage, etc. In this embodiment, the electrostatic capacitance value that becomes constant after the applied voltage becomes 0 (t > T3) based on the measurement results of the detector 161 obtained by the processing unit 141 is defined as Cs. Furthermore, for multiple detectors 161, the time point at which the electrostatic capacitance value becomes constant can be different depending on the detector. Therefore, the processing unit 141 can continuously obtain the electrostatic capacitance values ​​detected by multiple detectors 161, and output the electrostatic capacitance value after all the electrostatic capacitance values ​​of multiple detectors 161 become constant.

[0111] Next, the processing unit 141 proceeds to step S23, determining whether the obtained electrostatic capacitance value is greater than a threshold Th2 (second threshold). The threshold is the electrostatic capacitance value output by the detector 161 under the assumption that the substrate has been properly peeled off (released). The threshold Th2 can be preset in accordance with the conductive film pattern of the substrate, or it can be updated based on the electrostatic capacitance values ​​obtained during repeated peeling processes of substrates with the same type of conductive film pattern. Alternatively, the processing unit 141 can also determine the threshold Th2 based on past measurement results.

[0112] If the obtained electrostatic capacitance value is greater than the threshold ("yes" in S23), that is, if the obtained electrostatic capacitance value is greater than the value presumed to be stripped, the processing unit 141 causes the processing to proceed to S24 and performs the recovery processing.

[0113] In one example, the recovery process performed in S24 could involve applying voltage again to the electrode 151 corresponding to the detector 161 that detected an electrostatic capacitance value greater than the threshold Th2, and then stopping the voltage application after a predetermined time. Alternatively, voltage could be applied to all electrode 151 again, and then stopped after a predetermined time. Thus, when the electrostatic capacitance value is greater than the threshold due to deflection of the substrate 100 placed on the mounting portions 62 and 63, remounting the substrate 100 can remove the deflection and allow for normal peeling of the substrate.

[0114] In another example, the recovery process performed in S24 could also involve applying voltage to electrode 151 again and performing reverse voltage removal. Here, refer to... Figure 12 The reverse voltage removal process is explained. Figure 12 The voltage value 120a applied to one port of an electrode portion 151 relative to time and the voltage value 120b applied to the other port of the same electrode portion 151 relative to time are shown. As shown, as time passes, after applying voltage in a phased decay manner while reversing the positive and negative values ​​of the voltage applied to each port, the application of voltage is stopped, thereby reducing the charge remaining on the substrate 100. Furthermore, in Figure 12 In the example, a rectangular wave is used to illustrate reverse voltage removal, but it can also be a sine wave or other waveforms. Additionally, in... Figure 12 In this system, when the voltage applied to a port is reversed, a time is set for the voltage to become 0, but the voltage can also be reversed continuously.

[0115] In another example, the recovery process performed in S24 could be interrupted after the voltage applied to all electrode sections 151 is stopped. Furthermore, the processing unit 141 can also notify the operator of at least one of the following abnormal terminations via I / O 143 or communication unit 144: interruption of the manufacturing process, removal of the substrate 100, and cleaning of the electrostatic chuck. This prevents damage to the substrate 100 within the film deposition apparatus 1 due to insufficient separation of the substrate from the electrostatic chuck 15, thus preventing a decrease in manufacturing efficiency. Additionally, during notification, the position of the electrode section 151 within the electrostatic chuck corresponding to the detector 161 that detected an electrostatic capacitance value greater than a threshold value can be displayed.

[0116] Furthermore, the above-described recovery processes can be combined arbitrarily. For example, after applying a decaying voltage to the electrode section 151, the application of voltage can be stopped, and if the electrostatic capacitance value obtained even after a predetermined time is greater than a threshold, the manufacturing process can be interrupted and a notification can be issued while the application of voltage to all electrode sections 151 is stopped.

[0117] Alternatively, if the determination is based on the electrostatic capacitance value detected by detector 161 before the application of the stop voltage, the process in S21 can be omitted. In this case, for example, if the electrostatic capacitance value is greater than the threshold when the voltage obtained in S22 is applied ("Yes" in S23), the application of voltage is stopped while reverse voltage de-energizing is performed in S24; if the measured electrostatic capacitance value is less than the threshold ("No" in S23), the application of voltage can be stopped in S24 without reverse voltage de-energizing.

[0118] As explained above, in this processing example, when the substrate is peeled from the electrostatic chuck 15, the voltage applied by the power supply 171 is controlled based on the electrostatic capacitance value measured by the detector 161. Therefore, by detecting insufficient peeling of the electrostatic chuck from the substrate and causing the film deposition apparatus 1 to perform a recovery process, it is possible to prevent a decrease in manufacturing efficiency due to substrate 100 breakage.

[0119] <Methods for Manufacturing Electronic Devices>

[0120] Next, an example of a method for manufacturing an electronic device will be described. Hereinafter, as an example of an electronic device, the structure and manufacturing method of an organic EL display device will be illustrated. In this example, Figure 1 The film-forming module 301 is exemplified by having three locations on the production line.

[0121] First, let me describe the organic EL display device to be manufactured. Figure 13 (A) is an overall view showing the organic EL display device 50. Figure 13 (B) is a diagram showing the cross-sectional structure of a pixel.

[0122] like Figure 13 As shown in (A), a plurality of pixels 52, each equipped with a plurality of light-emitting elements, are arranged in a matrix in the display area 51 of the organic EL display device 50. Details will be described later, but each light-emitting element has a structure having an organic layer sandwiched between a pair of electrodes.

[0123] Furthermore, the term "pixel" as used herein refers to the smallest unit capable of displaying a desired color within the display area 51. In the case of a color organic EL display device, pixel 52 is constructed by combining multiple sub-pixels, namely a first light-emitting element 52R, a second light-emitting element 52G, and a third light-emitting element 52B, which emit different colors. Pixel 52 is typically composed of a combination of three sub-pixels: a red (R) light-emitting element, a green (G) light-emitting element, and a blue (B) light-emitting element, but is not limited thereto. Pixel 52 may contain at least one sub-pixel, preferably two or more sub-pixels, and more preferably three or more sub-pixels. For example, the sub-pixels constituting pixel 52 may be a combination of four sub-pixels: a red (R) light-emitting element, a green (G) light-emitting element, a blue (B) light-emitting element, and a yellow (Y) light-emitting element.

[0124] Figure 13 (B) is Figure 13(A) is a partial cross-sectional view at line AB. Pixel 52 has multiple sub-pixels on substrate 53 composed of organic EL elements. The organic EL elements include a first electrode (anode) 54, a hole transport layer 55, one of a red layer 56R, a green layer 56G, or a blue layer 56B, an electron transport layer 57, and a second electrode (cathode) 58. The hole transport layer 55, red layer 56R, green layer 56G, blue layer 56B, and electron transport layer 57 are equivalent to organic layers. The red layer 56R, green layer 56G, and blue layer 56B are respectively formed into patterns corresponding to light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue light.

[0125] Furthermore, the first electrode 54 is formed separately for each light-emitting element. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 can be formed either shared across multiple light-emitting elements 52R, 52G, and 52B, or they can be formed separately for each light-emitting element. That is, as shown... Figure 13 As shown in (B), it is also possible that, based on the hole transport layer 55 being formed as a shared layer across multiple sub-pixel regions, the red layer 56R, the green layer 56G, and the blue layer 56B are formed separately according to each sub-pixel region, and then the electron transport layer 57 and the second electrode 58 are formed as a shared layer across multiple sub-pixel regions on top of it.

[0126] In addition, to prevent short circuits between the adjacent first electrodes 54, an insulating layer 59 is provided between the first electrodes 54. Furthermore, since the organic EL layer is susceptible to deterioration due to moisture and oxygen, a protective layer 60 is provided to protect the organic EL element from the effects of moisture and oxygen.

[0127] exist Figure 13 In (B), the hole transport layer 55 and the electron transport layer 57 are represented by a single layer, but depending on the structure of the organic EL display element, they may be formed by multiple layers having a hole blocking layer and an electron blocking layer. Alternatively, a hole injection layer with a band structure that allows for smooth injection of holes from the first electrode 54 to the hole transport layer 55 may be formed between the first electrode 54 and the hole transport layer 55. Similarly, an electron injection layer may also be formed between the second electrode 58 and the electron transport layer 57.

[0128] Each of the red layer 56R, green layer 56G, and blue layer 56B can be formed either by a single emitting layer or by stacking multiple layers. For example, the red layer 56R can be constructed using two layers: a red emitting layer forming the upper layer and a hole transport layer or an electron blocking layer forming the lower layer. Alternatively, a red emitting layer can form the lower layer, and an electron transport layer or a hole blocking layer can form the upper layer. By placing layers on the lower or upper side of the emitting layer in this way, the emitting position of the emitting layer can be adjusted, and by adjusting the optical path length, the color purity of the emitting element can be improved.

[0129] Furthermore, an example of red layer 56R is shown here, but the same structure can also be used in green layer 56G and blue layer 56B. Additionally, the number of layers can be two or more. Moreover, layers of different materials can be stacked, such as light-emitting layers and electron-blocking layers, or layers of the same material can be stacked, for example, by stacking two or more light-emitting layers.

[0130] Next, an example of a method for manufacturing an organic EL display device will be specifically described. Here, it is assumed that the red layer 56R is composed of two layers, the lower layer 56R1 and the upper layer 56R2, and the green layer 56G and the blue layer 56B are composed of a single light-emitting layer.

[0131] First, a substrate 53 is prepared, which has a circuit (not shown) for driving an organic EL display device and a first electrode 54. Furthermore, the material of the substrate 53 is not particularly limited and can be made of glass, plastic, metal, etc. In this embodiment, a substrate with a polyimide film laminated on a glass substrate is used as the substrate 53.

[0132] An acrylic or polyimide resin layer is coated onto a substrate 53 on which the first electrode 54 is formed by rod coating or spin coating. The resin layer is patterned by photolithography to form an opening in the portion where the first electrode 54 is formed, and an insulating layer 59 is formed. This opening corresponds to the light-emitting area where the light-emitting element actually emits light.

[0133] A substrate 53 with a patterned insulating layer 59 is moved into a first film-forming chamber 303, and a hole transport layer 55 is formed on the first electrode 54 of the display area as a common layer. The hole transport layer 55 is formed using a mask with openings in each display area 51 of the panel portion that ultimately becomes an organic EL display device.

[0134] Next, the substrate 53 to which the hole transport layer 55 is formed is moved into the second film deposition chamber 303. Alignment is performed between the substrate 53 and the mask, and the substrate is placed on the mask. A red layer 56R is formed on the portion of the hole transport layer 55 where the red light-emitting element of the substrate 53 is disposed (the region forming the red sub-pixel). Here, the mask used in the second film deposition chamber is a high-precision mask with openings formed only in the regions of the substrate 53 that become red sub-pixels, among the multiple regions that become sub-pixels in the organic EL display device. Therefore, the red layer 56R containing the red light-emitting layer is formed only in the regions of the multiple sub-pixels on the substrate 53 that become red sub-pixels. In other words, the red layer 56R is selectively formed only in the regions of the multiple sub-pixels on the substrate 53 that become red sub-pixels, without forming blue or green sub-pixels.

[0135] Similar to the deposition of the red layer 56R, the green layer 56G is deposited in the third deposition chamber 303, and the blue layer 56B is deposited in the fourth deposition chamber 303. After the deposition of the red layer 56R, green layer 56G, and blue layer 56B is completed, the electron transport layer 57 is deposited over the entire display area 51 in the fifth deposition chamber 303. The electron transport layer 57 is formed as a common layer on the three color layers 56R, 56G, and 56B.

[0136] The substrate to which the electron transport layer 57 is formed is moved to the sixth film deposition chamber 303, where the second electrode 58 is deposited. In this embodiment, each layer is deposited by vacuum evaporation in the first to sixth film deposition chambers 303. However, the present invention is not limited to this; for example, the second electrode 58 in the sixth film deposition chamber 303 can also be deposited by sputtering. Afterward, the substrate to which the second electrode 58 is formed is moved to a sealing device, where the protective layer 60 is deposited by plasma CVD (sealing process), and the organic EL display device 50 is completed. Furthermore, while the protective layer 60 is formed by CVD, it is not limited to this method; it can also be formed by ALD or inkjet printing.

[0137] Here, for film deposition in the first to sixth film deposition chambers 303, a mask with openings corresponding to the patterns of each layer to be formed is used for film deposition. During film deposition, after adjusting (aligning) the relative positions of the substrate 53 and the mask, the substrate 53 is placed on the mask and film deposition is performed. Here, the alignment process performed in each film deposition chamber is performed as described above.

[0138] <Other Implementation Methods>

[0139] In the above embodiment, the processing unit 141 of the control device 14 of the film-forming apparatus 1 performs the processing described in <Processing Example 1> or <Processing Example 2>. However, the upper-level device 300 or the like, which uniformly controls the production line of electronic devices, can also perform the processing described in <Processing Example 1> or <Processing Example 2>. Alternatively, the processing described in <Processing Example 1> or <Processing Example 2> can also be performed by other devices capable of communicating with the control device 14.

[0140] The present invention can also be implemented by supplying a program that implements one or more functions of the above embodiments to a system or device via a network or storage medium, and having one or more processors in the computer of the system or device read and execute the program. Alternatively, the present invention can also be implemented by a circuit (e.g., an ASIC) that implements one or more functions.

[0141] This invention is not limited to the embodiments described above, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the claims are appended to disclose the scope of the invention.

Claims

1. A control device comprising a film-forming apparatus including an electrostatic chuck, a voltage supply component, and a measuring component, wherein the electrostatic chuck includes a plurality of adsorption portions and adsorbs a substrate, the voltage supply component is arranged according to each of the adsorption portions and applies a voltage to the electrodes of the adsorption portions, and the measuring component is arranged according to each of the adsorption portions and measures the electrostatic capacitance of the electrodes of the adsorption portions, characterized in that... The control device includes a control component that, when peeling the substrate from the electrostatic chuck, controls the voltage applied by the voltage supply component to the electrodes of the plurality of adsorption portions based on the measurement results of the measurement component. When the substrate is being peeled from the electrostatic chuck, after the voltage supply component stops applying the prescribed voltage, if the electrostatic capacitance value measured by the measuring component is greater than a threshold, the control component applies voltage again to the adsorption portion on which the measuring component is located. After the voltage is applied again and then stopped, if the electrostatic capacitance value measured by the measuring component is greater than the threshold, the control component controls the voltage supply component to apply voltage to all of the adsorption units again.

2. A control device comprising a film-forming apparatus including an electrostatic chuck, a voltage supply component, and a measuring component, wherein the electrostatic chuck includes a plurality of adsorption portions and adsorbs a substrate, the voltage supply component is arranged according to each of the adsorption portions and applies a voltage to the electrodes of the adsorption portions, and the measuring component is arranged according to each of the adsorption portions and measures the electrostatic capacitance of the electrodes of the adsorption portions, characterized in that... The control device includes a control component that, when peeling the substrate from the electrostatic chuck, controls the voltage applied by the voltage supply component to the electrodes of the plurality of adsorption portions based on the measurement results of the measurement component. When the substrate is being peeled from the electrostatic chuck, after the voltage supply component stops applying a predetermined voltage, if the electrostatic capacitance value measured by the measuring component is greater than a threshold, the control component controls the voltage supply component to apply voltage again. The threshold is preset in accordance with the conductive film pattern of the substrate.

3. The control device according to claim 2, characterized in that, When the substrate is peeled off from the electrostatic chuck, the control unit individually controls the voltage applied by the plurality of voltage supply units based on the measurement results of the measuring unit.

4. The control device according to any one of claims 1 to 3, characterized in that, When the substrate is peeled off from the electrostatic chuck, if the electrostatic capacitance value measured by the measuring component is greater than a threshold, the control component controls the voltage supply component to stop the application of voltage, and then controls the film forming apparatus to stop the manufacturing process.

5. The control device according to any one of claims 1 to 3, characterized in that, When the substrate is being peeled from the electrostatic chuck, if the electrostatic capacitance value measured by at least one of the measuring components is greater than the threshold, the control component controls the voltage supply component to perform reverse voltage removal.

6. The control device according to claim 5, characterized in that, When the substrate is peeled off from the electrostatic chuck, if the electrostatic capacitance value measured by the measuring component is greater than the threshold, the control component controls the voltage supply component to reduce the amplitude of the applied voltage in stages.

7. The control device according to any one of claims 1 to 3, characterized in that, The control component determines the threshold based on past measurement results from the measuring component.

8. The control device according to claim 4, characterized in that, The control device also includes a notification component that notifies of abnormal termination of the manufacturing process. When the control component controls the film-forming apparatus in a manner that causes the manufacturing process to stop, the notification component notifies the abnormal termination of the manufacturing process.

9. A film-forming apparatus, characterized in that, The film-forming apparatus includes: An electrostatic chuck, comprising multiple adsorption sections, adsorbs a substrate; A film-forming component, wherein the film-forming component forms a film on a substrate adsorbed onto the electrostatic chuck; A voltage supply component is provided for each of the adsorption portions and applies a voltage to the electrodes provided in the adsorption portions; A measuring component is provided for each of the adsorption portions, and the measuring component measures the electrostatic capacitance of the electrodes provided in the adsorption portions; as well as The control unit, when peeling the substrate from the electrostatic chuck, controls the voltage applied by the voltage supply unit to the electrodes of the plurality of adsorption portions based on the measurement results of the measuring unit. When the substrate is being peeled from the electrostatic chuck, after the voltage supply component stops applying the prescribed voltage, if the electrostatic capacitance value measured by the measuring component is greater than a threshold, the control component applies voltage again to the adsorption portion on which the measuring component is located. After the voltage is applied again and then stopped, if the electrostatic capacitance value measured by the measuring component is greater than the threshold, the control component controls the voltage supply component to apply voltage to all of the adsorption units again.

10. A film-forming apparatus, characterized in that, The film-forming apparatus includes: An electrostatic chuck, comprising multiple adsorption sections, adsorbs a substrate; A film-forming component, wherein the film-forming component forms a film on a substrate adsorbed onto the electrostatic chuck; A voltage supply component is provided for each of the adsorption portions and applies a voltage to the electrodes provided in the adsorption portions; A measuring component is provided for each of the adsorption portions, and the measuring component measures the electrostatic capacitance of the electrodes provided in the adsorption portions; as well as The control unit, when peeling the substrate from the electrostatic chuck, controls the voltage applied by the voltage supply unit to the electrodes of the plurality of adsorption portions based on the measurement results of the measuring unit. When the substrate is being peeled from the electrostatic chuck, after the voltage supply component stops applying a predetermined voltage, if the electrostatic capacitance value measured by the measuring component is greater than a threshold, the control component controls the voltage supply component to apply voltage again. The threshold is preset in accordance with the conductive film pattern of the substrate.

11. The film-forming apparatus according to claim 9 or 10, characterized in that, The plurality of adsorption units are arranged in a matrix.

12. A control method for a film-forming apparatus comprising an electrostatic chuck, a voltage supply component, and a measuring component, wherein the electrostatic chuck includes a plurality of adsorption portions and adsorbs a substrate, the voltage supply component is disposed at each of the adsorption portions and applies a voltage to electrodes provided in the adsorption portions, and the measuring component is disposed at each of the adsorption portions and measures the electrostatic capacitance of the electrodes provided in the adsorption portions, characterized in that... The control method includes a control step in which, when the substrate is peeled from the electrostatic chuck, the voltage applied by the voltage supply component to the electrodes of the plurality of adsorption portions is controlled based on the measurement results of the measuring component. In the control process, when the substrate is peeled from the electrostatic chuck, after the voltage supply component stops applying the predetermined voltage, if the electrostatic capacitance value measured by the measuring component is greater than a threshold, the voltage is applied again to the adsorption portion on which the measuring component is located. After the voltage is applied again and then stopped, if the electrostatic capacitance value measured by the measuring component is greater than the threshold, the voltage supply component is controlled to apply voltage to all the adsorption units again.

13. A control method for a film-forming apparatus comprising an electrostatic chuck, a voltage supply component, and a measuring component, wherein the electrostatic chuck includes a plurality of adsorption portions and adsorbs a substrate, the voltage supply component is disposed at each of the adsorption portions and applies a voltage to electrodes provided in the adsorption portions, and the measuring component is disposed at each of the adsorption portions and measures the electrostatic capacitance of the electrodes provided in the adsorption portions, characterized in that... The control method includes a control step in which, when the substrate is peeled from the electrostatic chuck, the voltage applied by the voltage supply component to the electrodes of the plurality of adsorption portions is controlled based on the measurement results of the measuring component. In the control process, when the substrate is peeled from the electrostatic chuck, after the voltage supply component stops applying a predetermined voltage, if the electrostatic capacitance value measured by the measuring component is greater than a threshold, the voltage supply component is controlled to apply voltage again. The threshold is preset in accordance with the conductive film pattern of the substrate.

14. A method for manufacturing an electronic device, characterized in that, The method for manufacturing the electronic device includes: In the adsorption process, the substrate is adsorbed onto the electrostatic chuck by the control method described in claim 12 or 13. The alignment process involves aligning the substrate, which was adsorbed onto the electrostatic chuck in the adsorption process, with the mask placed on the mask stage; and The film-forming process involves forming a film on the substrate via the mask.

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