PIP packaging structure and manufacturing method thereof

Abstract

The application provides a PIP packaging structure and a manufacturing method thereof. The PIP packaging structure comprises: an intermediate packaging structure, a plurality of electrical connection structures, an outer plastic packaging layer, a first pre-wiring substrate, a second pre-wiring substrate, and a passive device. The individual dies or multiple dies with various functions are firstly packaged to form a single die primary packaging or a die assembly primary packaging, and a primary re-wiring process is realized. Then, the intermediate packaging structure is secondarily packaged to form the PIP packaging structure. The pre-wiring substrate comprises complex multiple circuits, which re-wires the intermediate packaging structure, improves the performance of the entire PIP packaging structure, and realizes the integration of the passive device into the PIP packaging structure. The pre-wiring substrate can be tested before packaging, avoiding the use of known defective pre-wiring substrates. The pre-wiring substrate is a prefabricated substrate, and its manufacturing process is independent of the packaging process, which can save the packaging time of the entire packaging process.

Description

Technical Field

[0001] This invention relates to the field of chip packaging technology, and in particular to a PIP packaging structure and its manufacturing method. Background Technology

[0002] As electronic devices become smaller and lighter, semiconductor packaging structures with compact structures and small volumes are gaining increasing market favor.

[0003] As chips become more integrated and perform more complex functions, chip packaging has become increasingly demanding in recent years, leading to challenges in routing due to the small surface area of ​​the chips. Furthermore, overly dense routing can cause short circuits in the fine wiring, affecting product yield and reducing chip lifespan. This is especially true when multiple wiring layers are required, as the complexity of the process makes process control difficult. Summary of the Invention

[0004] The purpose of this invention is to provide a PIP (Package in Package) packaging structure and its manufacturing method to solve the problems in related technologies.

[0005] To achieve the above objectives, a first aspect of the present invention provides a PIP packaging structure, comprising:

[0006] The intermediate encapsulation structure has an external connection terminal;

[0007] Multiple electrical connection structures are located on the side of the intermediate encapsulation structure, and each electrical connection structure includes a first end and a second end opposite to each other.

[0008] An outer plastic seal covers the intermediate packaging structure and the plurality of electrical connection structures. The front side of the outer plastic seal exposes the external connection terminal of the intermediate packaging structure and the first terminal of the electrical connection structure, and the back side of the outer plastic seal exposes the second terminal of the electrical connection structure.

[0009] A first pre-wiring substrate has a first pre-wiring line inside. The first pre-wiring line includes a first front electrical connection point and a first back electrical connection point. The first front electrical connection point is exposed on the front side of the first pre-wiring substrate, and the first back electrical connection point is exposed on the back side of the first pre-wiring substrate. The back side of the first pre-wiring substrate faces the front side of the outer molding layer. A portion of the first back electrical connection points are connected to a first end of the electrical connection structure, and a portion of the first back electrical connection points are connected to an external connection end of the intermediate packaging structure.

[0010] A second pre-wiring substrate has a second pre-wiring line internally, the second pre-wiring line including a second front electrical connection point and a second back electrical connection point. The second front electrical connection point is exposed on the front side of the second pre-wiring substrate, and the second back electrical connection point is exposed on the back side of the second pre-wiring substrate. The back side of the second pre-wiring substrate faces the back side of the outer molding layer. The second back electrical connection point is connected to the second end of the electrical connection structure.

[0011] A passive device, electrically connected to the first front electrical connection point of the first pre-wiring substrate or the second front electrical connection point of the second pre-wiring substrate.

[0012] Optionally, the intermediate package structure includes: a first die, the first die including a plurality of first pads, the first pads being located on the active surface of the first die; an inner molding layer covering the first die, the front side of the inner molding layer exposing the active surface of the first die; a first inner conductive trace located on the front side of the first pads and the inner molding layer; a first inner conductive bump connected to the first inner conductive trace; and a first inner dielectric layer embedding the first inner conductive trace and the first inner conductive bump, the first inner conductive bump being exposed outside the first inner dielectric layer, the first inner conductive bump being the external connection terminal.

[0013] Optionally, the active side of the first die is covered with a first protective layer, the first protective layer exposing the first pad; the front side of the inner molding compound exposes the first protective layer and the first pad; the first inner conductive trace is also located on the first protective layer.

[0014] Optionally, the intermediate packaging structure is an MCM packaging structure, and the MCM packaging structure further includes: a second die, the second die including a plurality of second pads, the second pads being located on the active surface of the second die; the inner molding layer further covers the second die, and the front side of the inner molding layer further exposes the active surface of the second die; the first inner conductive trace is also located on the second pads for electrically connecting the first die and the second die.

[0015] Optionally, the active side of the first die is covered with a first protective layer, which exposes the first pad; the active side of the second die is covered with a second protective layer, which exposes the second pad; the front side of the inner molding compound exposes the first protective layer, the first pad, the second protective layer, and the second pad; the first inner conductive trace is located on the first protective layer and the second protective layer.

[0016] Optionally, the electrical connection structure is a conductive post or a conductive plug.

[0017] Optionally, the intermediate packaging structure has two or more.

[0018] Optionally, the intermediate packaging structure includes at least a first intermediate packaging structure and a second intermediate packaging structure, wherein the first intermediate packaging structure is an MCM packaging structure and the second intermediate packaging structure is a single-chip packaging structure.

[0019] Optionally, the intermediate packaging structure further includes: a second inner conductive trace located on the first inner conductive bump and the first inner dielectric layer;

[0020] The second inner conductive bump is connected to the second inner conductive trace;

[0021] The second inner dielectric layer encapsulates the second inner conductive trace and the second inner conductive bump, with the second inner conductive bump exposed outside the second inner dielectric layer; the second inner conductive bump is connected to the first back electrical connection point, and the second inner conductive bump is the external connection terminal.

[0022] Optionally, the intermediate packaging structure further includes: a third inner dielectric layer located on the active surface of the first die, the first end of the electrical connection structure, and the front side of the inner molding compound; the third inner dielectric layer exposes the first pad and the first end of the electrical connection structure; the first inner conductive trace is located on the first pad, the first end of the electrical connection structure, and the third inner dielectric layer.

[0023] Optionally, it further includes: a first outer dielectric layer, which encloses the first pre-wiring substrate, with the front side of the first pre-wiring substrate exposed outside the first outer dielectric layer; and / or a second outer dielectric layer, which encloses the second pre-wiring substrate, with the front side of the second pre-wiring substrate exposed outside the second outer dielectric layer.

[0024] A second aspect of the present invention provides a method for manufacturing a PIP package structure, comprising:

[0025] Multiple sets of first molded components are provided, each set of first molded components includes: an intermediate encapsulation structure and multiple conductive pillars located on the side of the intermediate encapsulation structure, the intermediate encapsulation structure having an external connection terminal; the conductive pillars include opposing first ends and second ends;

[0026] An outer plastic seal is formed, which covers the plurality of first molded components. The front side of the outer plastic seal exposes the external connection terminals of each intermediate encapsulation structure and the first end of each conductive post, while the back side of the outer plastic seal exposes the second end of each conductive post.

[0027] The back side of each of the first pre-wiring substrates corresponding to the first components to be molded in each group is connected to the front side of the outer molding layer. The first pre-wiring substrate has a first pre-wiring line, which includes a first front electrical connection point and a first back electrical connection point. The first front electrical connection point is exposed on the front side of the first pre-wiring substrate, and the first back electrical connection point is exposed on the back side of the first pre-wiring substrate. A portion of the first back electrical connection points of each first pre-wiring substrate are connected to the first end of the conductive pillar in the group, and a portion of the first back electrical connection points are connected to the external connection end of the intermediate packaging structure in the group.

[0028] The back side of each second pre-wiring substrate corresponding to the first molded component in each group is connected to the back side of the outer molding layer; the second pre-wiring substrate is provided with a second pre-wiring line, the second pre-wiring line includes a second front electrical connection point and a second back electrical connection point, the second front electrical connection point is exposed on the front side of the second pre-wiring substrate, and the second back electrical connection point is exposed on the back side of the second pre-wiring substrate; the second back electrical connection point of each second pre-wiring substrate is connected to the second end of the conductive pillar in the group;

[0029] Each passive device is electrically connected to the first front electrical connection point of the corresponding first pre-wiring substrate or the second front electrical connection point of the corresponding second pre-wiring substrate.

[0030] The process involves cutting to form multiple PIP package structures, each of which includes a set of the first molded components.

[0031] Optionally, the plurality of first encapsulated components are carried on a first carrier plate, with the external connection end of each intermediate encapsulation structure and the first end of each conductive post facing the first carrier plate;

[0032] An outer plastic seal layer is formed on the surface of the first carrier plate to embed each of the first sets of the first plastic sealant; the outer plastic seal layer is thinned until the second end of the conductive post is exposed.

[0033] Remove the first carrier board to expose the external connection terminals of each of the intermediate packaging structures, the first ends of each of the conductive pillars, and the front side of the outer plastic seal.

[0034] Optionally, the method for forming the intermediate packaging structure includes:

[0035] A second carrier board is provided, and multiple sets of second molded components are supported on the second carrier board. Each set of second molded components includes: a first die, the first die including a plurality of first pads, the first pads being located on the active surface of the first die; the active surface of the first die facing the second carrier board;

[0036] An inner molding layer is formed on the surface of the second carrier plate to embed each group of the second components to be molded;

[0037] Remove the second carrier plate to expose the active side of the first die and the front side of the inner molding layer;

[0038] A first internal conductive trace is formed on the front side of the first pad and the inner molding layer to electrically connect the first pad of the same first die.

[0039] A first internal conductive bump is formed on the first internal conductive trace, and a first internal dielectric layer is formed to encapsulate the first internal conductive trace and the first internal conductive bump. The first internal conductive bump is exposed outside the first internal dielectric layer to serve as an external connection terminal of the intermediate packaging structure.

[0040] The process involves cutting to form multiple intermediate packaging structures, each of which includes a set of the second molded components.

[0041] Optionally, the active surface of the first die is covered with a first protective layer, the first protective layer having a first opening that exposes the first pad; the first opening serves as an alignment pattern feature to arrange the first die on the second substrate according to a predetermined arrangement position.

[0042] Optionally, each group of the second die to be molded further includes: a second die, the second die including a plurality of second pads, the second pads being located on the active surface of the second die; the active surface of the second die facing the second carrier board; after removing the second carrier board, the active surface of the second die is also exposed; the first internal conductive trace is also formed on the second pads to electrically connect the first die and the second die in the group.

[0043] Optionally, it further includes: forming a first outer dielectric layer that encloses the first pre-wiring substrate, with the front side of the first pre-wiring substrate exposed outside the first outer dielectric layer; and / or forming a second outer dielectric layer that encloses the second pre-wiring substrate, with the front side of the second pre-wiring substrate exposed outside the second outer dielectric layer.

[0044] Optionally, each of the first pre-wiring substrates corresponding to each group of the first components to be molded is connected together, and each of the first pre-wiring substrates is cut apart in the step of cutting to form multiple PIP package structures; and / or each of the second pre-wiring substrates corresponding to each group of the first components to be molded is connected together, and each of the second pre-wiring substrates is cut apart in the step of cutting to form multiple PIP package structures.

[0045] A third aspect of the present invention provides a method for manufacturing a PIP package structure, comprising:

[0046] Multiple sets of third molded components are provided, each set of the third molded components includes: an intermediate packaging structure, the intermediate packaging structure having an external connection terminal;

[0047] An outer molding layer is formed, which covers the plurality of third components to be molded, and the front side of the outer molding layer exposes the external connection ends of each of the intermediate encapsulation structures.

[0048] The back side of each first pre-wiring substrate corresponding to the third molded component in each group is connected to the front side of the outer molding layer. The first pre-wiring substrate has a first pre-wiring line, which includes a first front electrical connection point and a first back electrical connection point. The first front electrical connection point is exposed on the front side of the first pre-wiring substrate, and the first back electrical connection point is exposed on the back side of the first pre-wiring substrate. A portion of the first back electrical connection points of each first pre-wiring substrate are connected to the external connection terminal of the intermediate packaging structure in the group.

[0049] Multiple conductive plugs are formed within the outer plastic encapsulation layer. The conductive plugs are located on the side of the intermediate packaging structure. Each conductive plug includes a first end and a second end opposite to each other. The first end is exposed on the front side of the outer plastic encapsulation layer and connected to a first back electrical connection point corresponding to a portion of the first pre-wiring substrate. The second end is exposed on the back side of the outer plastic encapsulation layer.

[0050] The back side of each second pre-wiring substrate corresponding to the third molded component in each group is connected to the back side of the outer molding layer; the second pre-wiring substrate has a second pre-wiring line, the second pre-wiring line includes a second front electrical connection point and a second back electrical connection point, the second front electrical connection point is exposed on the front side of the second pre-wiring substrate, and the second back electrical connection point is exposed on the back side of the second pre-wiring substrate; the second back electrical connection point of each second pre-wiring substrate is connected to the second end of the conductive plug in the group;

[0051] Each passive device is electrically connected to the first front electrical connection point of the corresponding first pre-wiring substrate or the second front electrical connection point of the corresponding second pre-wiring substrate.

[0052] The process involves cutting to form multiple PIP package structures, each of which includes a set of the third molded components.

[0053] A fourth aspect of the present invention provides a method for manufacturing a PIP package structure, comprising:

[0054] Multiple sets of third molded components are provided, each set of the third molded components includes: an intermediate packaging structure, the intermediate packaging structure having an external connection terminal;

[0055] An outer molding layer is formed, which covers the plurality of third components to be molded, and the front side of the outer molding layer exposes the external connection ends of each of the intermediate encapsulation structures.

[0056] The back side of each of the second pre-wiring substrates corresponding to the third molded component in each group is connected to the back side of the outer molding layer; the second pre-wiring substrate is provided with a second pre-wiring line, the second pre-wiring line includes a second front electrical connection point and a second back electrical connection point, the second front electrical connection point is exposed on the front side of the second pre-wiring substrate, and the second back electrical connection point is exposed on the back side of the second pre-wiring substrate.

[0057] Multiple conductive plugs are formed within the outer plastic encapsulation layer. The conductive plugs are located on the side of the intermediate package structure. Each conductive plug includes a first end and a second end opposite to each other. The first end is exposed on the front side of the outer plastic encapsulation layer, and the second end is exposed on the back side of the outer plastic encapsulation layer and connected to the second back side electrical connection point corresponding to the second pre-wiring substrate.

[0058] The back side of each of the first pre-wiring substrates corresponding to the third molded component in each group is connected to the front side of the outer molding layer. The first pre-wiring substrate has a first pre-wiring line, which includes a first front electrical connection point and a first back electrical connection point. The first front electrical connection point is exposed on the front side of the first pre-wiring substrate, and the first back electrical connection point is exposed on the back side of the first pre-wiring substrate. A portion of the first back electrical connection points of each first pre-wiring substrate are connected to the first end of the conductive plug in the group, and a portion of the first back electrical connection points are connected to the external connection end of the intermediate packaging structure in the group.

[0059] Each passive device is electrically connected to the first front electrical connection point of the corresponding first pre-wiring substrate or the second front electrical connection point of the corresponding second pre-wiring substrate.

[0060] The process involves cutting to form multiple PIP package structures, each of which includes a set of the third molded components.

[0061] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0062] First, individual or multiple bare dies with various functions are first packaged, forming a single-die primary package or a primary package of bare die assemblies, achieving a rewiring process. Then, the intermediate package structure is secondary packaged to form a PIP (Package In-Package) structure. In the PIP structure, a pre-wiring substrate is used to achieve rewiring of the intermediate package structure. The pre-wiring substrate includes complex multi-circuit circuits, which rewire the intermediate package structure, improving the overall performance of the PIP structure and enabling the inclusion of passive devices. Second, transferring the fine wiring in the rewiring layer to the pre-wiring substrate reduces the probability of short circuits, increases product yield, and reduces the number of conductive trace layers, lowering process complexity. Third, providing a pre-formed pre-wiring substrate allows for testing before packaging, avoiding the use of known defective pre-wiring substrates. Fourth, the pre-wiring substrate is a pre-fabricated substrate, and its fabrication process is independent of the packaging process, saving packaging time. Fifth, the pre-wiring substrate includes a first pre-wiring substrate and a second pre-wiring substrate, which realizes double-sided wiring. Compared with single-sided wiring, it can further improve the wiring complexity of the PIP package structure.

[0063] In addition, this PIP packaging structure has the advantages of small size and compact structure, making it suitable for small and lightweight electronic devices. Attached Figure Description

[0064] Figure 1 This is a cross-sectional schematic diagram of the PIP packaging structure according to the first embodiment of the present invention;

[0065] Figure 2 yes Figure 1 A flowchart illustrating the fabrication method of the PIP packaging structure in [the document / document / etc.].

[0066] Figures 3 to 14 yes Figure 2 A schematic diagram of the intermediate structure corresponding to the process in the document;

[0067] Figure 15 This is a cross-sectional schematic diagram of the PIP packaging structure according to the second embodiment of the present invention;

[0068] Figure 16 This is a cross-sectional schematic diagram of the PIP packaging structure according to the third embodiment of the present invention;

[0069] Figure 17 This is a cross-sectional schematic diagram of the PIP packaging structure according to the fourth embodiment of the present invention;

[0070] Figure 18 This is a cross-sectional schematic diagram of the PIP packaging structure according to the fifth embodiment of the present invention;

[0071] Figure 19This is a cross-sectional schematic diagram of the PIP packaging structure according to the sixth embodiment of the present invention;

[0072] Figure 20 This is a cross-sectional schematic diagram of the PIP packaging structure according to the seventh embodiment of the present invention;

[0073] Figures 21 to 23 yes Figure 20 The diagram shows the intermediate structure corresponding to the manufacturing method of the PIP package structure.

[0074] To facilitate understanding of this invention, all reference numerals appearing in the accompanying drawings are listed below:

[0075] PIP package structures 1-1, 1-2, 1-3, 1-4, 1-5, 1-6, 1-7; Intermediate package structure 10.

[0076] First die 11, first pad 111

[0077] The active side of the first blank 11a; the back side of the first blank 11b

[0078] Inner molding layer 12, front side 12a of the inner molding layer

[0079] 12b Back side of inner encapsulation layer 13 First inner conductive trace

[0080] First inner conductive bump 14 First inner dielectric layer 15

[0081] Electrical connection structure 20; First end 20a of the electrical connection structure

[0082] The second end 20b of the electrical connection structure has an outer plastic seal 30.

[0083] Front side of outer plastic seal 30a Back side of outer plastic seal 30b

[0084] First pre-wiring substrate 40 First pre-wiring line 400

[0085] First front electrical connection point 401 First rear electrical connection point 402

[0086] Front side 40a of the first pre-wiring substrate; Back side 40b of the first pre-wiring substrate

[0087] Second pre-wiring substrate 50 Second pre-wiring line 500

[0088] Second front electrical connection point 501 Second rear electrical connection point 502

[0089] Front side 50a of the second pre-wiring substrate; Back side 50b of the second pre-wiring substrate

[0090] Passive device 60 First protective layer 110

[0091] First opening 110a, conductive post 21

[0092] First end 21a of the conductive post; Second end 21b of the conductive post

[0093] Conductive plug 22, first end 22a of the conductive plug

[0094] The first end 22a of the conductive plug and the second bare die 31

[0095] Second pad 311, active surface 31a of the second die

[0096] The back of the second nude piece 31b and the second opening 310a

[0097] Second protective layer 310 Second internal conductive trace 16

[0098] Second inner conductive bump 17 Second inner dielectric layer 18

[0099] Metal pattern blocks 13a, 16a, through hole 221

[0100] External connection terminal 10a First outer dielectric layer 41

[0101] Second outer dielectric layer 51 First intermediate packaging structure 10-1

[0102] Second intermediate packaging structure 10-2 First molded component 2

[0103] First carrier plate 3 Second carrier plate 4

[0104] Second piece to be molded 5; First support plate 6

[0105] Second support plate 7 Third support plate 8

[0106] Third item awaiting molding 9 Detailed Implementation

[0107] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0108] Figure 1 This is a cross-sectional schematic diagram of the PIP packaging structure according to the first embodiment of the present invention.

[0109] Reference Figure 1 As shown, the PIP package structure 1-1 includes:

[0110] The intermediate encapsulation structure 10 has an external connection terminal 10a;

[0111] Multiple electrical connection structures 20 are located on the side of the intermediate encapsulation structure 10, and each electrical connection structure 20 includes a first end 20a and a second end 20b opposite to each other.

[0112] An outer plastic seal 30 covers an intermediate package structure 10 and multiple electrical connection structures 20. The front side 30a of the outer plastic seal 30 exposes the external connection terminal 10a of the intermediate package structure 10 and the first terminal 20a of the electrical connection structure 20. The back side 30b of the outer plastic seal 30 exposes the second terminal 20b of the electrical connection structure 20.

[0113] The first pre-wiring substrate 40 has a first pre-wiring line 400. The first pre-wiring line 400 includes a first front electrical connection point 401 and a first back electrical connection point 402. The first front electrical connection point 401 is exposed on the front side 40a of the first pre-wiring substrate 40, and the first back electrical connection point 402 is exposed on the back side 40b of the first pre-wiring substrate 40. The back side 40b of the first pre-wiring substrate 40 faces the front side 30a of the outer molding layer 30. A portion of the first back electrical connection points 402 are connected to the first end 20a of the electrical connection structure 20, and a portion of the first back electrical connection points 402 are connected to the external connection end 10a of the intermediate packaging structure 10.

[0114] The second pre-wiring substrate 50 has a second pre-wiring line 500 therein. The second pre-wiring line 500 includes a second front electrical connection point 501 and a second back electrical connection point 502. The second front electrical connection point 501 is exposed on the front side 50a of the second pre-wiring substrate 50, and the second back electrical connection point 502 is exposed on the back side 50b of the second pre-wiring substrate 50. The back side 50b of the second pre-wiring substrate 50 faces the back side 30b of the outer molding layer 30. The second back electrical connection point 502 is connected to the second end 20b of the electrical connection structure 20.

[0115] The passive device 60 is electrically connected to the second front electrical connection point 501 of the second pre-wiring substrate 50.

[0116] In this embodiment, refer to Figure 1 As shown, the intermediate package structure 10 includes: a first die 11, the first die 11 including a plurality of first pads 111, the first pads 111 being located on the active surface 11a of the first die 11; an inner molding compound 12, covering the first die 11, the front side 12a of the inner molding compound 12 exposing the active surface 11a of the first die 11; a first inner conductive trace 13, located on the first pads 111 and the front side 12a of the inner molding compound 12; a first inner conductive bump 14, connected to the first inner conductive trace 13; and a first inner dielectric layer 15, embedding the first inner conductive trace 13 and the first inner conductive bump 14, the first inner conductive bump 14 being exposed outside the first inner dielectric layer 15, the first inner conductive bump 14 being an external connection terminal 10a.

[0117] The first die 11 can be a power die, a memory die, a sensor die, or a radio frequency die, etc.

[0118] Reference Figure 1 As shown, the first die 11 includes an active surface 11a and a back surface 11b. A first pad 111 is exposed on the active surface 11a. The first die 11 may contain various devices formed on a semiconductor substrate, as well as electrical interconnect structures electrically connected to each device. The first pad 111 is connected to the electrical interconnect structures for inputting / outputting electrical signals from each device.

[0119] It should be noted that in this invention, " / " represents "or".

[0120] In this embodiment, the active surface 11a of the first die 11 is provided with a first protective layer 110. In other embodiments, the first protective layer 110 may be omitted from the active surface 11a of the first die 11.

[0121] The first protective layer 110 is an insulating material, which can be an organic polymer insulating material, an inorganic insulating material, or a composite material. Examples of organic polymer insulating materials include polyimide, epoxy resin, ABF (Ajinomoto buildup film), PBO (Polybenzoxazole), organic polymer films, or other organic materials with similar insulating properties. Examples of inorganic insulating materials include at least one of silicon dioxide and silicon nitride. Composite materials are inorganic-organic composite materials, such as inorganic-organic polymer composite materials, for example, SiO2 / resin polymer composite materials.

[0122] The inner molding layer 12 can be made of epoxy resin, polyimide resin, benzocyclobutene resin, polybenzoxazole resin, polybutylene terephthalate, polycarbonate, polyethylene terephthalate, polyethylene, polypropylene, polyolefin, polyurethane, polyolefin, polyethersulfone, polyamide, polyurethane, ethylene-vinyl acetate copolymer, or polyvinyl alcohol, etc. The inner molding layer 12 can also be made of various polymers or composite materials of resins and polymers.

[0123] The inner molding compound 12 includes a front side 12a and a back side 12b. In this embodiment, the front side 12a of the inner molding compound 12 exposes the first protective layer 110 and the first pad 111.

[0124] Figure 1In the illustrated embodiment, the first internal conductive trace 13 includes a plurality of metal pattern blocks 13a, having a layer. A portion of the metal pattern blocks 13a are selectively electrically connected to a plurality of first pads 111 to realize the circuit layout or electrical conduction of the first pads 111.

[0125] The layout of the first internal conductive trace 13 can be determined according to the preset circuit layout.

[0126] The material of the first inner dielectric layer 15 can be an organic polymer insulating material, an inorganic insulating material, or a composite material. Examples of organic polymer insulating materials include polyimide, epoxy resin, ABF (Ajinomoto buildup film), PBO (Polybenzoxazole), organic polymer films, or other organic materials with similar insulating properties. Examples of inorganic insulating materials include at least one of silicon dioxide and silicon nitride. The composite material is an inorganic-organic composite material, such as an inorganic-organic polymer composite material, for example, a SiO2 / resin polymer composite material. Compared to inorganic insulating materials, organic polymer insulating materials and composite materials have lower tensile stress, which can prevent warping of the surface of the intermediate encapsulation structure 10.

[0127] In this embodiment, refer to Figure 1 As shown, the electrical connection structure 20 is specifically a conductive post 21. The conductive post 21 includes a first end 21a and a second end 21b opposite to each other. The material of the conductive post 21 can be a metal with excellent conductivity, such as copper.

[0128] The number and position of the conductive posts 21 can be determined according to the preset circuit layout.

[0129] The material of the outer plastic seal 30 can be the same as that of the inner plastic seal 12.

[0130] The first pre-wiring substrate 40 includes first pre-wiring lines 400 and insulating material layers filling the spaces between the first pre-wiring lines 400. The first pre-wiring substrate 40 may include a front side 40a and a back side 40b, with first front electrical connection points 401 exposed on the front side 40a and first back electrical connection points 402 exposed on the back side 40b. There may be multiple first front electrical connection points 401 exposed on the front side 40a and multiple first back electrical connection points 402 exposed on the back side 40b.

[0131] The second pre-wiring substrate 50 includes second pre-wiring lines 500 and an insulating material layer filling the spaces between the second pre-wiring lines 500. The second pre-wiring substrate 50 may include a front side 50a and a back side 50b, with second front side electrical connection points 501 exposed on the front side 50a and second back side electrical connection points 502 exposed on the back side 50b. There may be multiple second front side electrical connection points 501 exposed on the front side 50a and multiple second back side electrical connection points 502 exposed on the back side 50b.

[0132] Continue to refer to Figure 1 As shown, the areas of the first pre-wiring substrate 40 and the second pre-wiring substrate 50 are both larger than the area of ​​the intermediate packaging structure 10, so as to expose the first back electrical connection point 402 and the second back electrical connection point 502 respectively.

[0133] Compared to the approach of fabricating the redistribution layer on the molding compound of the first die 11, the advantages of using the first pre-wiring substrate 40 and the second pre-wiring substrate 50 in this approach are as follows: First, transferring the fine wiring in the redistribution layer to the first pre-wiring substrate 40 and the second pre-wiring substrate 50 reduces the probability of short circuits, increases product yield, and reduces the number of conductive trace layers, thus lowering process complexity. Second, providing pre-formed first pre-wiring substrates 40 and 50 allows for testing of the first pre-wiring substrates 40 and 50 before packaging, avoiding the use of known defective pre-wiring substrates. Third, since the first pre-wiring substrates 40 and 50 are pre-fabricated substrates, their fabrication process is independent of the packaging process, saving packaging time throughout the entire packaging process. Fifth, the wiring on the front side 30a of the outer plastic seal layer is led to the back side 30b of the outer plastic seal layer through the electrical connection structure 20. The front side 30a of the outer plastic seal layer has a first pre-wiring substrate 40, and the back side 30b of the outer plastic seal layer has a second pre-wiring substrate 50, realizing double-sided wiring. Compared with single-sided wiring, the wiring complexity of the PIP package structure 1-1 can be further improved.

[0134] Furthermore, by incorporating the passive device 60 into the PIP package structure 1-1 through the first pre-wiring substrate 40 and the second pre-wiring substrate 50, the functionality of the PIP package structure 1-1 is enriched. Since the first pre-wiring substrate 40 and the second pre-wiring substrate 50 include complex multi-circuits, complex wiring between the passive device 60 and the first die 11 can also be realized.

[0135] The passive device 60 may include resistors, inductors, and capacitors, all of which are characterized by operating in the presence of a signal without requiring a power supply in the circuit. The passive device 60 includes an electrical connection point that is connected to the front electrical connection point 501 of the second pre-wiring substrate 50 to enable the passive device 60 to input / output electrical signals.

[0136] This embodiment does not limit the number or type of the first die 11 and the passive device 60.

[0137] In this embodiment, the first front electrical connection point 401 of the first pre-wiring substrate 40 serves as the external electrical connection terminal of the PIP package structure 1-1.

[0138] In other embodiments, the passive device 60 may also be electrically connected to the first front electrical connection point 401 of the first pre-wiring substrate 40. In other words, the second front electrical connection point 501 of the second pre-wiring substrate 50 serves as the external electrical connection terminal of the PIP package structure 1-1.

[0139] An embodiment of the present invention provides Figure 1 A method for fabricating the PIP package structure 1-1 in the image. Figure 2 It is a flowchart of the production method. Figures 3 to 14 yes Figure 2 The diagram shows the intermediate structure corresponding to the process flow.

[0140] First, refer to Figure 2 Step S1 in Figures 3 to 9 As shown, multiple sets of first molded components 2 are provided. Each set of first molded components 2 includes: an intermediate encapsulation structure 10 and multiple conductive pillars 21 located on the side of the intermediate encapsulation structure 10. The intermediate encapsulation structure 10 has an external connection end 10a. The conductive pillars 21 include a first end 21a and a second end 21b opposite to each other.

[0141] In this embodiment, refer to Figure 4 As shown, the intermediate package structure 10 includes: a first die 11, the first die 11 including a plurality of first pads 111, the first pads 111 being located on the active surface 11a of the first die 11; an inner molding compound 12, covering the first die 11, the front side 12a of the inner molding compound 12 exposing the active surface 11a of the first die 11; a first inner conductive trace 13, located on the first pads 111 and the front side 12a of the inner molding compound 12; a first inner conductive bump 14, connected to the first inner conductive trace 13; and a first inner dielectric layer 15, embedding the first inner conductive trace 13 and the first inner conductive bump 14, the first inner conductive bump 14 being exposed outside the first inner dielectric layer 15, the first inner conductive bump 14 being an external connection terminal 10a.

[0142] Specifically: refer to Figure 3 and Figure 4As shown, a first carrier board 3 and multiple sets of first molding compounds 2 supported on the first carrier board 3 are provided. Each set of first molding compounds 2 includes: an intermediate encapsulation structure 10 and multiple conductive pillars 21 located on the side of the intermediate encapsulation structure 10. The first inner conductive bump 14, the first inner dielectric layer 15 of the intermediate encapsulation structure 10, and the first end 21a of the conductive pillar 21 face the first carrier board 3. Figure 3 This is a top view of the first carrier plate and multiple sets of the first molded parts; Figure 4 It is along Figure 3 A cross-sectional view along line AA in the diagram.

[0143] Specifically, forming the intermediate packaging structure 10 may include steps S111 to S113.

[0144] Step S111: Refer to Figure 5 and Figure 6 As shown, a second carrier board 4 and multiple sets of second molded components 5 supported on the second carrier board 4 are provided. Each set of second molded components 5 includes: a first die 11, the first die 11 including a plurality of first pads 111, the first pads 111 being located on the active surface 11a of the first die 11; the active surface 11a of the first die 11 faces the second carrier board 4. Figure 5 This is a top view of the second carrier plate and multiple sets of second parts to be molded; Figure 6 It is along Figure 5 A cross-sectional view of the BB line.

[0145] The first die 11 can be a power die, a memory die, a sensor die, or a radio frequency die, etc.

[0146] Reference Figure 6 As shown, the first die 11 includes an active surface 11a and a back surface 11b. The first die 11 may contain various devices formed on a semiconductor substrate, as well as electrical interconnect structures electrically connected to each device. The first pad 111 exposed on the active surface 11a of the first die 11 is connected to the electrical interconnect structure for inputting / outputting electrical signals from each device.

[0147] In this embodiment, the active surface 11a of the first die 11 is provided with a first protective layer 110 to buffer the stress on the first pad 111 when the inner molding compound 12 is thinned. In other embodiments, the first protective layer 110 may be omitted from the active surface 11a of the first die 11.

[0148] The first die 11 is formed by dicing a wafer. The wafer includes an active side and a back side, with the active side exposing first pads 111 and an insulating layer (not shown) protecting the first pads 111. The first die 11 is formed after the wafer is diced. Accordingly, the first die 11 includes an active side 11a and a back side 11b, with the first pads 111 and the insulating layer of the electrically insulating adjacent first pads 111 exposed on the active side 11a.

[0149] A first protective layer 110 is applied to the active surface 11a of the first die 11. The application process of the first protective layer 110 can be as follows: before the wafer is diced into the first die 11, the first protective layer 110 is applied to the active surface of the wafer, and the wafer with the first protective layer 110 is diced to form the first die 11 with the first protective layer 110. Alternatively, the first protective layer 110 can be applied to the active surface 11a of the first die 11 after the wafer is diced into the first die 11.

[0150] The first protective layer 110 is an insulating material, which can be an organic polymer insulating material, an inorganic insulating material, or a composite material. Examples of organic polymer insulating materials include polyimide, epoxy resin, ABF (Ajinomoto buildup film), PBO (Polybenzoxazole), organic polymer films, or other organic materials with similar insulating properties. Composite materials are inorganic-organic composite materials, such as inorganic-organic polymer composite materials, for example, SiO2 / resin polymer composite materials.

[0151] Organic polymer insulating materials can be a) laminated onto the insulating layer between the first pad 111 and adjacent first pads 111 by a lamination process, or b) coated or printed onto the insulating layer between the first pad 111 and adjacent first pads 111 and then cured, or c) cured onto the insulating layer between the first pad 111 and adjacent first pads 111 by an injection molding process.

[0152] When the material of the first protective layer 110 is an inorganic material such as silicon dioxide or silicon nitride, it can be formed on the insulating layer between the first pad 111 and the adjacent first pad 111 by a deposition process.

[0153] The first protective layer 110 may include one or more layers.

[0154] In this embodiment, refer to Figure 6 As shown, a first opening 110a is also formed within the first protective layer 110 to expose the first pad 111. The first opening 110a can be achieved by dry etching or wet etching.

[0155] The wafer can be thinned from the back side before dicing to reduce the thickness of the first die 11.

[0156] The second carrier plate 4 is a rigid plate, which may include plastic plates, glass plates, ceramic plates or metal plates, etc.

[0157] When multiple sets of second moldable components 5 are disposed on the surface of the second carrier plate 4, they may include:

[0158] The first protective layer 110 faces the second carrier plate 4, and multiple first bare films 11 are arranged on the second carrier plate 4. Specifically, the surface of the second carrier plate 4 is provided with multiple first mounting areas, each of which is provided with an alignment mark. The first opening 110a can be used as an alignment pattern feature to arrange the first bare films 11 on the second carrier plate 4 according to a predetermined arrangement position. The surface of the second carrier plate 4 can be coated with an adhesive layer to fix the multiple first bare films 11.

[0159] The adhesive layer can be made of an easily peelable material so that the multiple first bare sheets 11 can be peeled off from the second carrier plate 4. For example, it can be made of a thermally separating material that can be de-adhesive by heating or a UV separating material that can be de-adhesive by ultraviolet irradiation.

[0160] A set of second molded components 5 is located in a region on the surface of the second carrier plate 4, which facilitates subsequent cutting. Multiple sets of second molded components 5 are fixed on the surface of the second carrier plate 4 to simultaneously fabricate multiple intermediate packaging structures 10, which is beneficial for mass production and cost reduction.

[0161] Step S112: Refer to Figure 7 As shown, an inner molding layer 12 is formed on the surface of the second carrier plate 4 to embed each group of second molded parts 5.

[0162] The inner molding compound 12 can be made of epoxy resin, polyimide resin, benzocyclobutene resin, polybenzoxazole resin, polybutylene terephthalate, polycarbonate, polyethylene terephthalate, polyethylene, polypropylene, polyolefin, polyurethane, polyolefin, polyethersulfone, polyamide, polyimide, ethylene-vinyl acetate copolymer, or polyvinyl alcohol, etc. The material of the inner molding compound 12 can also be various polymers or composite materials of resins and polymers. Correspondingly, encapsulation can be performed by filling the spaces between the first bare wafers 11 with liquid molding compound, followed by high-temperature curing using a molding die. In some embodiments, the inner molding compound 12 can also be formed using methods such as thermoforming or transfer molding of plastic materials.

[0163] The inner molding layer 12 may include a front side 12a and a back side 12b.

[0164] In some embodiments, the inner molding layer 12 may be thinned. The thinning of the inner molding layer 12 may be performed from the back side 12b, for example by mechanical grinding, such as grinding with an abrasive wheel.

[0165] During the formation of the inner molding layer 12 and the grinding of the inner molding layer 12, the first protective layer 110 can provide stress buffering for the first pad 111.

[0166] Step S113: Refer to Figure 8 As shown, the second carrier plate 4 is removed, exposing the active surface 11a of the first die 11 and the front surface 12a of the inner molding layer 12.

[0167] The removal method for the second carrier plate 4 can be existing removal methods such as laser ablation or UV irradiation.

[0168] After removing the second carrier plate 4, a first support plate 6 can be provided on the back side 12b of the inner molding layer 12. The first support plate 6 is a rigid plate, which may include a glass plate, a ceramic plate, a metal plate, etc. The first support plate 6 can play a supporting role in the subsequent processes of forming the first inner conductive trace 13, and / or forming the first inner conductive bump 14, and / or forming the first inner dielectric layer 15.

[0169] Step S114: Continue to refer to Figure 8 As shown, a first internal conductive trace 13 is formed on the first pad 111 and the front side 12a of the inner molding compound 12 to electrically connect to the first pad 111 of the same first die 11.

[0170] In this embodiment, forming the first internal conductive trace 13 includes the following steps S1141 to S1144.

[0171] Step S1141: A photoresist layer is formed on the first protective layer 110 of each first die 11, the first pad 111 exposed by the first protective layer 110, and the front side 12a of the inner molding compound 12.

[0172] In step S1141, in one optional embodiment, the formed photoresist layer can be a photosensitive film. The photosensitive film can be peeled off from the tape and applied to the first protective layer 110 of each first die 11, the first pads 111 exposed by the first protective layer 110, and the front side 12a of the inner molding compound 12. In other optional embodiments, the photoresist layer can also be formed by first coating liquid photoresist and then heating and curing it.

[0173] Step S1142: Expose and develop the photoresist layer, retain the photoresist layer in the first predetermined area, the first predetermined area is complementary to the area where the metal pattern block 13a of the first internal conductive trace 13 to be formed is located.

[0174] Step S1143: Fill the complementary region of the first predetermined region with a metal layer to form a metal pattern block 13a of the first internal conductive trace 13.

[0175] A number of metal pattern blocks 13a are selectively electrically connected to a plurality of first pads 111 to realize the circuit layout of the first pads 111.

[0176] This step S1143 can be completed using an electroplating process. Electroplating copper or aluminum is a relatively mature process.

[0177] Specifically, before forming the photoresist layer in step S1141, a seed layer can be formed on the first protective layer 110 of each first die 11, the first pad 111 exposed by the first protective layer 110, and the front side 12a of the inner molding compound 12 by physical vapor deposition or chemical vapor deposition. The seed layer can serve as a power supply layer for electroplating copper or aluminum.

[0178] Electroplating can include electrolytic plating or electrodeless plating. Electrolytic plating uses the workpiece to be plated as the cathode and electrolyzes the electrolyte to form a metal layer on the workpiece. Electroless plating is a method of reducing and precipitating metal ions in a solution onto the workpiece to form a metal layer. In some embodiments, a method of sputtering followed by etching can also be used to form the metal pattern block 13a.

[0179] Step S1144: Ashing removes the remaining photoresist layer in the first predetermined area.

[0180] After ashing, the seed crystal layer of the first predetermined region is removed by dry etching or wet etching.

[0181] The metal pattern block 13a of the first internal conductive trace 13 can achieve a smooth upper surface through a polishing process, such as chemical mechanical polishing.

[0182] It should be noted that the metal pattern blocks 13a of the first internal conductive trace 13 in this step S114 are arranged according to design requirements. The distribution of the first internal conductive trace 13 on different groups of second molded parts 5 can be the same or different.

[0183] In other embodiments, if the first pad 111 is covered with a first protective layer 110, before fabricating the first internal conductive trace 13, a first opening 110a is formed in the first protective layer 110 to expose the first pad 111.

[0184] If the material of the first protective layer 110 is a laser-reactive material, such as epoxy resin, the first opening 110a can be formed by denaturing it through laser irradiation. If the material of the first protective layer 110 is a photosensitive material, such as polyimide, the first opening 110a can be formed by exposure followed by development. If the material of the first protective layer 110 is a dry-etchable or wet-etchable material, such as silicon dioxide or silicon nitride, the first opening 110a can be formed by dry-etching or wet-etching.

[0185] Step S115: Continue to refer to Figure 8 As shown, a first inner conductive bump 14 is formed on the first inner conductive trace 13, and a first inner dielectric layer 15 is formed to embed the first inner conductive trace 13 and the first inner conductive bump 14. The first inner conductive bump 14 is exposed outside the first inner dielectric layer 15.

[0186] Forming the first inner conductive bump 14 and the first inner dielectric layer 15 may include steps S1151-S1155.

[0187] Step S1151: A photoresist layer is formed on the metal pattern block 13a, the first protective layer 110 exposed by the metal pattern block 13a, and the front side 12a of the inner molding layer 12.

[0188] In step S1151, in one optional embodiment, the formed photoresist layer can be a photosensitive film. The photosensitive film can be peeled off from the tape and applied to the metal pattern block 13a, the first protective layer 110 exposed on the metal pattern block 13a, and the front side 12a of the inner molding layer 12. In other optional embodiments, the photoresist layer can also be formed by first coating liquid photoresist and then heating and curing it.

[0189] Step S1152: Expose and develop the photoresist layer, retaining the photoresist in the second predetermined area. The second predetermined area is complementary to the area where the first internal conductive bump 14 is to be formed.

[0190] Step S1152 patternes the photoresist layer. Alternatively, other easily removable sacrificial materials can be used instead of the photoresist layer.

[0191] Step S1153: Fill the complementary region of the second predetermined region with a metal layer to form the first internal conductive bump 14.

[0192] This step S1153 can be completed using an electroplating process. Electroplating copper or aluminum is a relatively mature process. Before electroplating copper or aluminum, a seed layer can be deposited as a power supply layer using physical vapor deposition or chemical vapor deposition.

[0193] Step S1154: Ashing removes the remaining photoresist layer in the second predetermined area.

[0194] The first internal conductive bump 14 can achieve a smooth upper surface through a polishing process, such as chemical mechanical polishing.

[0195] Step S1155: Refer to Figure 8As shown, a first inner dielectric layer 15 is formed on the inner first inner conductive bump 14, the metal pattern block 13a, the first protective layer 110 exposed by the metal pattern block 13a, and the front side 12a of the inner molding layer 12; the first inner dielectric layer 15 is thinned until the first inner conductive bump 14 is exposed.

[0196] The first inner dielectric layer 15 is an insulating material, which can be an organic polymer insulating material, an inorganic insulating material, or a composite material. Examples of organic polymer insulating materials include polyimide, epoxy resin, ABF (Ajinomoto buildup film), PBO (Polybenzoxazole), organic polymer films, or other organic materials with similar insulating properties. Composite materials are inorganic-organic composite materials, such as inorganic-organic polymer composite materials, for example, SiO2 / resin polymer composite materials.

[0197] The organic polymer insulating material can be laminated onto the front surface 12a of the first inner conductive trace 13, the first inner conductive bump 14, the first protective layer 110 not covering the first inner conductive trace 13, and the inner encapsulation layer 12 by a) lamination process, or b) first coated onto the front surface 12a of the first inner conductive trace 13, the first inner conductive bump 14, the first protective layer 110 not covering the first inner conductive trace 13, and the inner encapsulation layer 12, and then cured, or c) cured onto the front surface 12a of the first inner conductive trace 13, the first inner conductive bump 14, the first protective layer 110 not covering the first inner conductive trace 13, and the inner encapsulation layer 12 by injection molding process.

[0198] When the material of the first inner dielectric layer 15 is an inorganic insulating material such as silicon dioxide or silicon nitride, it can be formed on the front side 12a of the first inner conductive trace 13, the first inner conductive bump 14, the first protective layer 110 that does not cover the first inner conductive trace 13, and the inner molding layer 12 by a deposition process.

[0199] Compared to inorganic insulating materials, organic polymer insulating materials and composite materials have lower tensile stress, which can prevent warping of the encapsulation body when the first inner dielectric layer 15 is formed over a large area.

[0200] The first inner dielectric layer 15 may include one or more layers.

[0201] When the first inner dielectric layer 15 covers the first inner conductive bump 14, the first inner dielectric layer 15 is polished until the first inner conductive bump 14 is exposed.

[0202] After exposing the first internal conductive bump 14, refer to Figure 8 As shown, the first internal conductive bump 14 serves as the external connection terminal of the intermediate packaging structure 10.

[0203] After exposing the first internal conductive bump 14, refer to Figure 9 As shown, the first support plate 6 is removed.

[0204] The removal method for the first support plate 6 can be existing removal methods such as laser stripping or UV irradiation.

[0205] Step S116: Refer to Figure 9 As shown, multiple intermediate packaging structures 10 are formed by cutting, and each intermediate packaging structure 10 includes a set of second molded components 5.

[0206] Next, refer to Figure 2 Step S2 in Figure 10 and Figure 11 As shown, an outer plastic seal 30 is formed, which covers multiple sets of first components to be molded 2. The front side 30a of the outer plastic seal 30 exposes the external connection terminals 10a of each intermediate encapsulation structure 10 and the first end 21a of each conductive post 21. The back side 30b of the outer plastic seal 30 exposes the second end 21b of each conductive post 21.

[0207] In this embodiment, step S2 specifically includes steps S21 to S22.

[0208] Step S21: Refer to Figure 10 As shown, an outer molding layer 30 is formed on the surface of the first carrier plate 3 to embed each group of the first molded components 2; refer to Figure 11 As shown, the outer plastic sealant 30 is thinned until the second end 21b of each conductive post 21 is exposed.

[0209] The material and formation method of the outer plastic sealant 30 can be referred to the material and formation method of the inner plastic sealant 12.

[0210] The outer plastic seal 30 may include a front side 30a and a back side 30b.

[0211] Reference Figure 11 As shown, the thinning of the outer plastic seal 30 is performed from the back side 30b, which can be done by mechanical grinding, such as grinding with a grinding wheel, to expose the second ends 21b of each conductive post 21.

[0212] Step S22: Refer to Figure 12 As shown, the first carrier board 3 is removed, exposing the first inner conductive bump 14, the first inner dielectric layer 15, the first end 21a of each conductive post 21, and the front side 30a of the outer plastic seal 30 of each intermediate package structure 10.

[0213] The removal method for the first carrier plate 3 can be existing removal methods such as laser ablation or UV irradiation.

[0214] After removing the first carrier plate 3, a second support plate 7 can be provided on the back surface 30b of the outer molding layer 30 and on the second end 21b of each conductive post 21. The second support plate 7 is a rigid plate and may include a glass plate, ceramic plate, metal plate, etc. The second support plate 7 can play a supporting role in the subsequent process of applying the first pre-wiring substrate 40.

[0215] Next, refer to Figure 2 Step S3 and Figure 12 As shown, the back side 40b of each first pre-wiring substrate 40 corresponding to each group of first molded components 2 is connected to the front side 30a of the outer molding layer 30. The first pre-wiring substrate 40 is provided with a first pre-wiring line 400. The first pre-wiring line 400 includes a first front electrical connection point 401 and a first back electrical connection point 402. The first front electrical connection point 401 is exposed on the front side 40a of the first pre-wiring substrate 40, and the first back electrical connection point 402 is exposed on the back side 40b of the first pre-wiring substrate 40. A portion of the first back electrical connection points 402 of each first pre-wiring substrate 40 are connected to the first end 21a of the conductive post 21 in the group, and a portion of the first back electrical connection points 402 are connected to the external connection end 10a of the intermediate packaging structure 10 in the group.

[0216] In this embodiment, the first back electrical connection point 402 can be connected to the first end 21a of the conductive post 21 or the first inner conductive bump 14 by means of soldering or other methods.

[0217] In this embodiment, the first pre-wiring substrates 40 corresponding to each group of first components to be molded 2 are connected together. In other embodiments, the first pre-wiring substrates 40 corresponding to each group of first components to be molded 2 can also be separate from each other.

[0218] After the back side 40b of the first pre-wiring substrate 40 is connected to the front side 30a of the outer molding layer 30, refer to Figure 13 As shown, the second support plate 7 is removed.

[0219] The second support plate 7 can be removed by existing methods such as laser stripping or UV irradiation.

[0220] After removing the second support plate 7, a third support plate 8 can be provided on the front side 40a of the first pre-wiring substrate 40. The third support plate 8 is a rigid plate and may include a glass plate, ceramic plate, metal plate, etc. The third support plate 8 can play a supporting role in the subsequent process of applying the second pre-wiring substrate 50.

[0221] Then, refer to Figure 2 Step S4 and Figure 13As shown, the back side 50b of each second pre-wiring substrate 50 corresponding to each group of first molded components 2 is connected to the back side 30b of the outer molding layer 30; the second pre-wiring substrate 50 is provided with a second pre-wiring line 500, the second pre-wiring line 500 includes a second front electrical connection point 501 and a second back electrical connection point 502, the second front electrical connection point 501 is exposed on the front side 50a of the second pre-wiring substrate 50, and the second back electrical connection point 502 is exposed on the back side 50b of the second pre-wiring substrate 50; the second back electrical connection point 502 of each second pre-wiring substrate 50 is connected to the second end 21b of the conductive post 21 in the group.

[0222] The second back electrical connection point 502 can be connected to the second end 21b of the conductive post 21 by means of soldering or other methods.

[0223] In this embodiment, the second pre-wiring substrates 50 corresponding to each group of first components to be molded 2 are connected together. In other embodiments, the second pre-wiring substrates 50 corresponding to each group of first components to be molded 2 can also be separate from each other.

[0224] Next, refer to Figure 2 Step S5 and Figure 13 As shown, each passive device 60 is electrically connected to the second front electrical connection point 501 of the corresponding second pre-wiring substrate 50.

[0225] After the passive device 60 is electrically connected to the second front electrical connection point 501 of the second pre-wiring substrate 50, refer to Figure 14 As shown, remove the third support plate 8.

[0226] The removal method for the third support plate 8 can be existing removal methods such as laser stripping or UV irradiation.

[0227] As can be seen, in this embodiment, the first front electrical connection point 401 of the first pre-wiring substrate 40 serves as the external electrical connection terminal of the PIP package structure 1-1. In other embodiments, solder balls may also be provided on the first front electrical connection point 401 of the first pre-wiring substrate 40.

[0228] In other embodiments, each passive device 60 may be electrically connected to the corresponding first front electrical connection point 401 of the first pre-wiring substrate 40. In other words, the second front electrical connection point 501 of the second pre-wiring substrate 50 serves as the external electrical connection terminal of the PIP package structure 1-1.

[0229] The passive device 60 may include resistors, inductors, and capacitors, all of which share the characteristic of operating in the presence of a signal without requiring a power supply. The passive device 60 includes electrical connection points that connect to electrical connection points 501 on the front side of the second pre-wiring substrate 50, enabling the passive device 60 to input / output electrical signals. The electrical connection points of the passive device 60 and the electrical connection points 501 on the front side of the second pre-wiring substrate 50 can be connected together by solder.

[0230] Then, refer to Figure 2 Step S6 in Figure 14 and Figure 1 As shown, multiple PIP package structures 1-1 are formed by cutting, and each PIP package structure 1-1 includes a set of first molded components 2.

[0231] In the embodiment where the first pre-wiring substrates 40 corresponding to each group of first molded components 2 are connected together, each first pre-wiring substrate 40 is cut apart during the cutting process in step S6. In the embodiment where the second pre-wiring substrates 50 corresponding to each group of first molded components 2 are connected together, each second pre-wiring substrate 50 is cut apart during the cutting process in step S6.

[0232] In the PIP package structure 1-1 formed by the above steps, individual or multiple bare dies with various functions are first packaged, that is, a single bare die package or a bare die assembly package is formed, realizing a rewiring process; then the intermediate package structure is packaged a second time to form the PIP package structure.

[0233] Figure 15 This is a cross-sectional schematic diagram of the PIP packaging structure according to the second embodiment of the present invention. (Refer to...) Figure 15 As shown, the PIP packaging structure 1-2 in this embodiment is largely the same as the PIP packaging structure 1-1 in the previous embodiment, except that the intermediate packaging structure 10 further includes:

[0234] The second inner conductive trace 16 is located on the first inner conductive bump 14 and the first inner dielectric layer 15;

[0235] The second inner conductive bump 17 is connected to the second inner conductive trace 16;

[0236] The second inner dielectric layer 18 encapsulates the second inner conductive trace 16 and the second inner conductive bump 17, with the second inner conductive bump 17 exposed outside the second inner dielectric layer 18.

[0237] In other words, in this embodiment, the second internal conductive bump 17 on the second internal conductive trace 16 serves as the external connection end 10a of the intermediate packaging structure 10, and is used to connect to the first back electrical connection point 402.

[0238] Figure 15 In the illustrated embodiment, the second inner conductive trace 16 includes a plurality of metal pattern blocks 16a, having one layer. The second inner conductive trace 16 enables a further circuit layout between the second inner conductive trace 16 and the first inner conductive bump 14.

[0239] Accordingly, the manufacturing method differs from the aforementioned embodiment in that: after step S115 and before step S116, the following is also performed:

[0240] A second inner conductive trace 16 is formed on the first inner conductive bump 14 and the first inner dielectric layer 15;

[0241] A second inner conductive bump 17 is formed on the second inner conductive trace 16, and a second inner dielectric layer 18 is formed to embed the second inner conductive trace 16 and the second inner conductive bump 17, with the second inner conductive bump 17 exposed outside the second inner dielectric layer 18.

[0242] The material and forming process of the second internal conductive trace 16 can refer to the material and forming process of the first internal conductive trace 13.

[0243] The material and forming process of the second internal conductive bump 17 can be referred to the material and forming process of the first internal conductive bump 14.

[0244] The material and forming process of the second inner dielectric layer 18 can refer to the material and forming process of the first inner dielectric layer 15.

[0245] In other embodiments, the second inner conductive trace 16 and the first inner conductive bump 14 may also have one or more conductive traces.

[0246] Figure 16 This is a cross-sectional schematic diagram of the PIP packaging structure according to the third embodiment of the present invention. (Refer to...) Figure 16 As shown, the PIP packaging structure 1-3 in this embodiment is largely the same as the PIP packaging structures 1-1 and 1-2 in the previous embodiments, except that: in the intermediate packaging structure 10, the first protective layer 110 is omitted and replaced by: a third inner dielectric layer 19 is provided on the active surface 11a of the first die 11 and the front surface 12a of the inner molding layer 12; the third inner dielectric layer 19 has a third opening 19a that exposes the first pad 111; the first inner conductive trace 13 is located on the first pad 111 and the third inner dielectric layer 19.

[0247] Accordingly, the manufacturing method differs from the aforementioned embodiment in that: in step S1, before forming the first inner conductive trace 13, a third inner dielectric layer 19 is formed on the active surface 11a of the exposed first die 11 and the front surface 12a of the inner molding compound 12; a plurality of third openings 19a are formed in the third inner dielectric layer 19, and the third openings 19a expose the first pad 111; then the first inner conductive trace 13 is formed on the first pad 111 and the third inner dielectric layer 19.

[0248] The material of the third inner dielectric layer 19 is the same as that of the first inner dielectric layer 15.

[0249] If the material of the third inner dielectric layer 19 is a laser-reactive material, such as epoxy resin, the third opening 19a can be formed by denaturing it through laser irradiation. If the material of the third inner dielectric layer 19 is a photosensitive material, such as polyimide, the third opening 19a can be formed by exposure followed by development. If the material of the third inner dielectric layer 19 is a dry-etchable or wet-etchable material, such as silicon dioxide or silicon nitride, the third opening 19a can be formed by dry-etching or wet-etching.

[0250] Figure 17 This is a cross-sectional schematic diagram of the PIP packaging structure according to the fourth embodiment of the present invention. (Refer to...) Figure 17 As shown, the PIP packaging structure 1-4 in this embodiment is largely the same as the PIP packaging structures 1-1 and 1-2 in the previous embodiments, except that: the second die to be molded 5 further includes: a second die 31, the second die 31 includes a plurality of second pads 311, the second pads 311 are located on the active surface 31a of the second die 31; the first internal conductive trace 13 is also formed on the second pads 311 to electrically connect the first die 11 and the second die 31 in the group.

[0251] The second pad 311 can be a power die, memory die, sensor die, or radio frequency die, etc.

[0252] The second die 31 includes an active surface 31a and a back surface 31b. A second pad 311 is exposed on the active surface 31a. The second die 31 may contain various devices formed on a semiconductor substrate, as well as electrical interconnect structures electrically connected to each device. The second pad 311 is connected to the electrical interconnect structures for inputting / outputting electrical signals from each device.

[0253] In this embodiment, the active surface 31a of the second die 31 is provided with a second protective layer 310. In other embodiments, the second protective layer 310 may be omitted from the active surface 31a of the second die 31.

[0254] The second die 31 may have a different function than the first die 11. In addition, the thickness of the first protective layer 110 on the first die 11 and the second protective layer 310 on the second die 31 may also be different.

[0255] The material and formation method of the second protective layer 310 can refer to the material and formation method of the first protective layer 110.

[0256] Accordingly, the method for manufacturing PIP packaging structures 1-4 differs from the aforementioned embodiment in that: when forming the intermediate packaging structure 10 in step S111, each group of second die-to-be-molded components 5 further includes: a second die 31; the active surface 31a of the second die 31 faces the second carrier plate 4; in step S113, after removing the second carrier plate 4, the active surface 31a of the second die 31 is also exposed.

[0257] Before forming the inner molding compound 12, a second opening 310a may be formed in the second protective layer 310 to expose the second pad 311. In step S111, the second opening 310a may serve as an alignment pattern feature to arrange the second die 31 on the second substrate 4 according to a predetermined arrangement position. Alternatively, before forming the inner molding compound 12, the second protective layer 310 may also cover the second pad 311, and the second opening 310a may be formed before forming the first inner conductive trace 13.

[0258] Figure 18 This is a cross-sectional schematic diagram of the PIP packaging structure according to the fifth embodiment of the present invention. (Refer to...) Figure 18 As shown, the PIP packaging structure 1-5 in this embodiment is largely the same as the PIP packaging structures 1-1, 1-2, 1-3, and 1-4 in the previous embodiments. The only difference is that the intermediate packaging structure 10 includes at least a first intermediate packaging structure 10-1 and a second intermediate packaging structure 10-2. The first intermediate packaging structure 10-1 is an MCM packaging structure, and the second intermediate packaging structure 10-2 is a single-chip packaging structure.

[0259] Figure 19 This is a cross-sectional schematic diagram of the PIP packaging structure according to the sixth embodiment of the present invention. (Refer to...) Figure 19 As shown, the PIP packaging structure 1-6 in this embodiment is largely the same as the PIP packaging structures 1-1, 1-2, 1-3, 1-4, and 1-5 in the previous embodiments, except that: it also includes: a first outer dielectric layer 41 that encapsulates the first pre-wiring substrate 40, with the front side 40a of the first pre-wiring substrate 40 exposed outside the first outer dielectric layer 41; and a second outer dielectric layer 51 that encapsulates the second pre-wiring substrate 50, with the front side 50a of the second pre-wiring substrate 50 exposed outside the second outer dielectric layer 51.

[0260] Accordingly, the method for fabricating PIP package structures 1-6 differs from the aforementioned embodiments in that: after step S3, it further includes: forming a first outer dielectric layer 41 that embeds the first pre-wiring substrate 40, with the front side 40a of the first pre-wiring substrate 40 exposed outside the first outer dielectric layer 41; and after step S4, it further includes: forming a second outer dielectric layer 51 that embeds the second pre-wiring substrate 50, with the front side 50a of the second pre-wiring substrate 50 exposed outside the second outer dielectric layer 51.

[0261] In other embodiments, either the first outer dielectric layer 41 or the second outer dielectric layer 51 may be used.

[0262] Figure 20 This is a cross-sectional schematic diagram of the PIP packaging structure according to the seventh embodiment of the present invention. (Refer to...) Figure 20 As shown, the PIP packaging structure 1-7 in this embodiment is largely the same as the PIP packaging structures 1-1, 1-2, 1-3, 1-4, 1-5, and 1-6 in the previous embodiments, with the only difference being that the conductive plug 22 replaces the conductive post 21. In other words, the electrical connection structure 20 in this embodiment is the conductive plug 22.

[0263] Accordingly, the method for fabricating PIP packaging structures 1-7 differs from the aforementioned embodiments in that: step S1, referring to... Figure 21 and Figure 22 As shown, Figure 22 It is along Figure 21 In the cross-sectional view of the CC line, relative to the first molded component 2, the conductive pillar 21 of the third molded component 9 is omitted and replaced with: after step S3 and before step S4, a plurality of conductive plugs 22 are formed in the outer molding layer 30. The conductive plugs 22 are located on the side of the intermediate packaging structure 10. The conductive plugs 22 include a first end 22a and a second end 22b opposite to each other. The first end 22a is connected to a first back electrical connection point 402 corresponding to a portion of the first pre-wiring substrate 40. The second end 22b is exposed on the back side 30b of the outer molding layer 30. After the second pre-wiring substrate 50 is applied in step S4, the second end 22b of the conductive plug 22 is connected to the second back electrical connection point 502 of the second pre-wiring substrate 50 in the group.

[0264] In this embodiment, refer to Figure 23 As shown, multiple through holes 221 can be formed in the outer plastic seal 30 first, with the bottom of the through holes 221 exposing the first back electrical connection point 402; then, a metal layer is filled in the through holes 221 to form a conductive plug 22.

[0265] Through-hole 221 can be formed by dry etching, wet etching or laser drilling.

[0266] In other embodiments, a second pre-wiring substrate 50 may be applied to the back side 30b of the outer molding layer 30 first, then conductive plugs 22 may be fabricated, and then a first pre-wiring substrate 40 may be applied to the front side 30a of the outer molding layer 30.

[0267] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A method for fabricating a PIP (Package In-Package) structure, characterized in that, include: Multiple sets of first molded components are provided, each set of first molded components includes: an intermediate encapsulation structure and multiple conductive pillars located on the side of the intermediate encapsulation structure, the intermediate encapsulation structure having an external connection terminal; the conductive pillars include opposing first ends and second ends; An outer plastic seal is formed, which covers the plurality of first molded components. The front side of the outer plastic seal exposes the external connection terminals of each intermediate encapsulation structure and the first end of each conductive post. The back side of the outer plastic seal exposes the second end of each conductive post. The conductive post is an electrical connection structure formed before the outer plastic seal is formed. The back side of each first pre-wiring substrate corresponding to the first component to be molded in each group is connected to the front side of the outer molding layer; the first pre-wiring substrate is provided with a first pre-wiring line, the first pre-wiring line includes a first front electrical connection point and a first back electrical connection point, the first front electrical connection point is exposed on the front side of the first pre-wiring substrate, and the first back electrical connection point is exposed on the back side of the first pre-wiring substrate; a portion of the first back electrical connection points of each first pre-wiring substrate are connected to the first end of the conductive pillar in the group, and a portion of the first back electrical connection points are connected to the external connection end of the intermediate packaging structure in the group. The back side of each second pre-wiring substrate corresponding to the first component to be molded in each group is connected to the back side of the outer molding layer; the second pre-wiring substrate has a second pre-wiring line, the second pre-wiring line includes a second front electrical connection point and a second back electrical connection point, the second front electrical connection point is exposed on the front side of the second pre-wiring substrate, and the second back electrical connection point is exposed on the back side of the second pre-wiring substrate; the second back electrical connection point of each second pre-wiring substrate is connected to the second end of the conductive pillar in the group; both the first pre-wiring substrate and the second pre-wiring substrate are prefabricated substrates; Each passive device is electrically connected to the first front electrical connection point of the corresponding first pre-wiring substrate or the second front electrical connection point of the corresponding second pre-wiring substrate. The process involves cutting to form multiple PIP package structures, each of which includes a set of the first molded components. The method for forming the intermediate packaging structure includes: A second carrier board is provided, and multiple sets of second molded components are supported on the second carrier board. Each set of second molded components includes: a first die, the first die including a plurality of first pads, the first pads being located on the active surface of the first die; the active surface of the first die facing the second carrier board; The active side of the first die is covered with a first protective layer, the first protective layer having a first opening that exposes the first pad; the first opening serves as an alignment pattern feature to arrange the first die on the second substrate according to a predetermined arrangement position.

2. The method for manufacturing a PIP packaging structure according to claim 1, characterized in that, The multiple sets of first molded components are carried on a first carrier plate, and the external connection end of each intermediate encapsulation structure and the first end of each conductive post face the first carrier plate. An outer plastic seal layer is formed on the surface of the first carrier plate to embed each of the first sets of the first plastic sealant; the outer plastic seal layer is thinned until the second end of the conductive post is exposed. Remove the first carrier board to expose the external connection terminals of each of the intermediate packaging structures, the first ends of each of the conductive pillars, and the front side of the outer plastic seal.

3. The method for manufacturing a PIP packaging structure according to claim 1, characterized in that, In providing a second carrier board and multiple sets of second molded components carried on the second carrier board, each set of second molded components includes: a first die, the first die including a plurality of first pads, the first pads being located on the active surface of the first die; after the active surface of the first die faces the second carrier board, the method for forming the intermediate package structure includes: An inner molding layer is formed on the surface of the second carrier plate to embed each group of the second components to be molded; Remove the second carrier plate to expose the active side of the first die and the front side of the inner molding layer; A first internal conductive trace is formed on the front side of the first pad and the inner molding layer to electrically connect the first pad of the same first die. A first internal conductive bump is formed on the first internal conductive trace, and a first internal dielectric layer is formed to encapsulate the first internal conductive trace and the first internal conductive bump. The first internal conductive bump is exposed outside the first internal dielectric layer to serve as an external connection terminal of the intermediate packaging structure. The process involves cutting to form multiple intermediate packaging structures, each of which includes a set of the second molded components.

4. The method for manufacturing a PIP packaging structure according to claim 3, characterized in that, Each group of the second die to be molded further includes: a second die, the second die including a plurality of second pads, the second pads being located on the active surface of the second die; the active surface of the second die facing the second carrier board; after the second carrier board is removed, the active surface of the second die is also exposed; the first internal conductive trace is also formed on the second pads to electrically connect the first die and the second die in the group.

5. The method for manufacturing a PIP packaging structure according to claim 1, characterized in that, Also includes: A first outer dielectric layer is formed to encapsulate the first pre-wiring substrate, with the front side of the first pre-wiring substrate exposed outside the first outer dielectric layer; And / or form a second outer dielectric layer that encapsulates the second pre-wiring substrate, wherein the front side of the second pre-wiring substrate is exposed outside the second outer dielectric layer.

6. The method for manufacturing a PIP packaging structure according to any one of claims 1 to 5, characterized in that, Each group of the first pre-wired substrates corresponding to the first component to be molded is connected together, and each of the first pre-wired substrates is cut apart in the step of cutting to form multiple PIP package structures. And / or each of the second pre-wiring substrates corresponding to the first group of molded components are connected together, and each of the second pre-wiring substrates is cut open in the step of cutting to form multiple PIP package structures.

7. A PIP packaging structure, said PIP packaging structure being prepared by the method for manufacturing a PIP packaging structure according to any one of claims 1 to 6, characterized in that, include: The intermediate encapsulation structure has an external connection terminal; Multiple electrical connection structures are located on the side of the intermediate encapsulation structure, and each electrical connection structure includes a first end and a second end opposite to each other. An outer plastic seal covers the intermediate packaging structure and the plurality of electrical connection structures. The front side of the outer plastic seal exposes the external connection terminal of the intermediate packaging structure and the first terminal of the electrical connection structure, and the back side of the outer plastic seal exposes the second terminal of the electrical connection structure. A first pre-wiring substrate has a first pre-wiring line inside. The first pre-wiring line includes a first front electrical connection point and a first back electrical connection point. The first front electrical connection point is exposed on the front side of the first pre-wiring substrate, and the first back electrical connection point is exposed on the back side of the first pre-wiring substrate. The back side of the first pre-wiring substrate faces the front side of the outer molding layer. A portion of the first back electrical connection points are connected to a first end of the electrical connection structure, and a portion of the first back electrical connection points are connected to an external connection end of the intermediate packaging structure. A second pre-wiring substrate has a second pre-wiring line internally, the second pre-wiring line including a second front electrical connection point and a second back electrical connection point. The second front electrical connection point is exposed on the front side of the second pre-wiring substrate, and the second back electrical connection point is exposed on the back side of the second pre-wiring substrate. The back side of the second pre-wiring substrate faces the back side of the outer molding layer. The second back electrical connection point is connected to the second end of the electrical connection structure. A passive device, electrically connected to the first front electrical connection point of the first pre-wiring substrate or the second front electrical connection point of the second pre-wiring substrate.

8. The PIP packaging structure according to claim 7, characterized in that, The intermediate package structure includes: a first die, the first die including a plurality of first pads, the first pads being located on the active surface of the first die; an inner molding layer covering the first die, the front side of the inner molding layer exposing the active surface of the first die; a first inner conductive trace located on the front side of the first pads and the inner molding layer; a first inner conductive bump connected to the first inner conductive trace; and a first inner dielectric layer embedding the first inner conductive trace and the first inner conductive bump, the first inner conductive bump being exposed outside the first inner dielectric layer, the first inner conductive bump being the external connection terminal.

9. The PIP packaging structure according to claim 8, characterized in that, The active side of the first die is covered with a first protective layer, which exposes the first pad; the front side of the inner molding compound exposes the first protective layer and the first pad; the first inner conductive trace is also located on the first protective layer.

10. The PIP packaging structure according to claim 8, characterized in that, The intermediate packaging structure is an MCM packaging structure, which further includes: a second die, the second die including a plurality of second pads, the second pads being located on the active surface of the second die; the inner molding layer further covers the second die, and the front side of the inner molding layer also exposes the active surface of the second die; the first inner conductive trace is also located on the second pads for electrically connecting the first die and the second die.

11. The PIP packaging structure according to claim 10, characterized in that, The active side of the first die is covered with a first protective layer, which exposes the first pad; the active side of the second die is covered with a second protective layer, which exposes the second pad; the front side of the inner molding compound exposes the first protective layer, the first pad, the second protective layer, and the second pad; the first inner conductive trace is located on the first and second protective layers.

12. The PIP packaging structure according to claim 7, characterized in that, The intermediate packaging structure has two or more.

13. The PIP packaging structure according to claim 12, characterized in that, The intermediate packaging structure includes at least a first intermediate packaging structure and a second intermediate packaging structure, wherein the first intermediate packaging structure is an MCM packaging structure and the second intermediate packaging structure is a single-chip packaging structure.

14. The PIP packaging structure according to claim 8, characterized in that, The intermediate packaging structure further includes: a second inner conductive trace located on the first inner conductive bump and the first inner dielectric layer; The second inner conductive bump is connected to the second inner conductive trace; The second inner dielectric layer encapsulates the second inner conductive trace and the second inner conductive bump, with the second inner conductive bump exposed outside the second inner dielectric layer. The second inner conductive bump serves as the external connection terminal.

15. The PIP packaging structure according to claim 8, characterized in that, The intermediate packaging structure further includes: a third inner dielectric layer located on the active surface of the first die, the first end of the electrical connection structure, and the front side of the inner molding compound; the third inner dielectric layer exposes the first pad and the first end of the electrical connection structure; the first inner conductive trace is located on the first pad, the first end of the electrical connection structure, and the third inner dielectric layer.

16. The PIP packaging structure according to claim 7, characterized in that, Also includes: A first outer dielectric layer is used to embed the first pre-wiring substrate, with the front side of the first pre-wiring substrate exposed outside the first outer dielectric layer. And / or a second outer dielectric layer, which encapsulates the second pre-wiring substrate, with the front side of the second pre-wiring substrate exposed outside the second outer dielectric layer.

Images