A butterfly valve, a semiconductor device, and a control method of a butterfly valve

By using elliptical or eccentric circular valve plate design and nonlinear speed control, the problem of unstable pressure control in butterfly valves during minor adjustments has been solved, and the pressure stability and control accuracy of the reaction chamber have been improved under low gas flow rates.

CN115163848BActive Publication Date: 2025-11-07SICENTURY SEMICONDUCTOR TECHNOLOGY (SUZHOU) CO LTD
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Patent Information

Application Number
CN202210704404.3
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-06-21
Publication Date
2025-11-07
Estimated Expiration
2042-06-21

AI Technical Summary

Technical Problem

Existing butterfly valves are difficult to achieve stable pressure control during minor adjustments, the valve plate movement is unstable, and a large gas flow is required to maintain pressure when closed, resulting in a limited control range.

Method used

The valve plate adopts an elliptical or eccentric circular design, combined with a reducer and a slot structure. The valve plate rotation is controlled by nonlinear speed control, which increases the gas flow variation in the range of 0° to 5° and optimizes the gap between the valve plate and the channel to achieve rapid pressure stabilization.

Benefits of technology

The pressure control efficiency of the butterfly valve is enhanced, which can maintain stable pressure in the reaction chamber under relatively small gas flow rates, reduce valve plate movement instability, and improve control accuracy and efficiency.

✦ Generated by Eureka AI based on patent content.

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Abstract

The application discloses a butterfly valve, a semiconductor device and a control method of the butterfly valve. The semiconductor device comprises a reaction module having a reaction cavity therein, a spraying device arranged on the reaction module, a gas supply part connected to the spraying device, a reaction gas inlet into the reaction cavity through the spraying device, and an exhaust port arranged on the reaction module; and a butterfly valve arranged between the reaction module and a vacuumizing device, wherein the butterfly valve comprises a vacuumizing device connected to the exhaust port of the reaction module through a pipeline, a valve body and a controller arranged on the valve body, a flow channel arranged in the valve body, a circular valve plate arranged in the flow channel, a rotating shaft connected to the middle part of the valve plate, an oval-shaped end section of the valve body, and an output end of the rotating shaft connected to the controller, wherein the rotating shaft is rotated to drive the valve plate to rotate based on the control of the controller, so as to open or close the flow channel. The butterfly valve can effectively control the pressure in the range of 0° to 90°, the pressure control range is increased, the pressure control efficiency of the butterfly valve is increased, and the pressure is kept stable by using a smaller gas flow.
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Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor equipment, in particular to a butterfly valve, a semiconductor equipment and a control method of the butterfly valve. BACKGROUND

[0002] In the manufacturing process of semiconductor, the gas pressure in the reaction cavity needs to be kept constant, and at present, the pressure is controlled by the combination of butterfly valve and vacuum pumping device. In this way, the vacuum pumping device acts at the same time as the rotation opening of the butterfly valve is controlled to make the gas flow and then control the gas pressure in the reaction cavity. At present, the cross section of the butterfly valve is usually a concentric circle with the rotating shaft as the center. When the valve plate is opened and closed between 0-5°, the gas flow changes little, and it needs to be expanded to more than 5° to effectively control the pressure. The control range of the butterfly valve is very limited, and it is difficult to achieve stable pressure control in small adjustments.

[0003] In addition, the movement control of the valve plate is usually linear, which may cause the valve plate to move too fast or too slow, resulting in too long time for stable pressure control, and the gap between the valve plate and the valve body is large, so a large gas flow is needed to maintain the pressure in the closed state of the butterfly valve. SUMMARY

[0004] To overcome the above-mentioned shortcomings, the purpose of the present application is to provide a semiconductor equipment based on butterfly valve control and a control method of the butterfly valve, which can keep the pressure of the reaction cavity stable with small gas flow.

[0005] In order to achieve the above purpose, the present application adopts the following technical scheme:

[0006] A butterfly valve comprises:

[0007] a valve body and a controller arranged on the valve body,

[0008] a flow channel is arranged in the valve body, a valve plate in the shape of a circle is arranged in the flow channel, the middle part of the valve plate is connected to a rotating shaft, the end section of the valve body is in the shape of an ellipse, and the rotating shaft is connected to the output end of the controller,

[0009] The rotating shaft is controlled to rotate by the controller to drive the valve plate to rotate, so as to open or close the flow channel.

[0010] Optionally, as an embodiment of the butterfly valve,

[0011] The two sides of the valve body are respectively provided with a first connecting part and a second connecting part, and the first connecting part and the second connecting part are respectively sealedly connected with the connecting pipeline.

[0012] Optionally, as an embodiment of the butterfly valve,

[0013] The valve plate section is in the shape of an elliptical arc with the long side in the diameter direction of the valve body and the short side in the gas movement direction, and the elliptical equation is y2 / a 2 +x 2 / b 2 =1, where a is the length of the long side of the ellipse, b is the length of the short side of the ellipse, the gap d1 between the valve plate and the channel wall is D / 2-a*cosθ, where D is the diameter of the channel, and θ is the angle of rotation of the valve plate around the rotation axis.

[0014] Optionally, the butterfly valve is one embodiment,

[0015] The two ends of the cross section of the valve plate are eccentric circles with an eccentric distance of R1 and a radius of R2, and both R1 and R2 are smaller than the maximum radius of the valve plate, and the gap d2 between the valve plate and the channel wall is D / 2-(R1*COSθ+R2), where D is the diameter of the channel, and θ is the angle of rotation of the valve plate around the rotation axis.

[0016] Optionally, the butterfly valve is one embodiment,

[0017] The rotation axis is provided with a first clamping groove, and the valve plate is embedded in the first clamping groove and fixedly connected through the connecting piece.

[0018] Optionally, the butterfly valve is one embodiment,

[0019] The slotting depth of the first clamping groove is equal to the radius of the rotation axis.

[0020] Optionally, the butterfly valve is one embodiment,

[0021] The middle part of the valve plate is provided with a second clamping groove, the slotting depth of the second clamping groove is half of the thickness of the valve plate, and the first clamping groove and the second clamping groove are connected in cooperation, so that the valve plate coincides with the central axis of the rotation axis.

[0022] Optionally, the butterfly valve is one embodiment,

[0023] A speed reducer (such as a turbine speed reducer) is arranged between the controller and the rotation axis.

[0024] The application contains a semiconductor device which includes the butterfly valve of any one of the above embodiments, and the semiconductor device further includes:

[0025] A reaction module having a reaction cavity therein, a spraying device arranged on the reaction module, the spraying device being connected to a gas supply part, reaction gas being sent into the reaction cavity through the spraying device, and an exhaust port arranged on the reaction module;

[0026] A vacuumizing device connected to the exhaust port of the reaction module through a pipeline;

[0027] The butterfly valve is arranged in the connecting pipeline between the reaction module and the vacuumizing device.

[0028] Another aspect of the present application provides a control method of the butterfly valve, which comprises:

[0029] The rotation speed of the valve plate in the range of 0° to 5° is greater than the rotation speed of the valve plate in the range of 5° to 90°.

[0030] Advantages

[0031] The semiconductor device based on the butterfly valve control and the control method of the butterfly valve provided by the present application have the advantages that, through the optimized design of the valve plate section, the valve plate still has sufficient gas flow change when rotating between 0° and 5°, and the non-linear speed control is realized to control the gas pressure rapidly, thereby increasing the pressure control efficiency of the butterfly valve, and in addition, the structure of the valve plate is more compact, and a smaller gas inlet amount is used to maintain the constant pressure in the closed state. BRIEF DESCRIPTION OF DRAWINGS

[0032] The accompanying drawings are included to provide an understanding of the present technical solution, and constitute a part of the specification, and together with the embodiments of the present disclosure serve to explain the technical solution of the present disclosure, and do not constitute a limitation on the technical solution of the present disclosure. The shapes and sizes of the components in the drawings do not reflect the true proportions, and the purpose is only to schematically illustrate the content of the present application.

[0033] Figure 1 A schematic diagram for comparison between the prior art and the embodiments of the present application;

[0034] Figure 2 A schematic diagram of the three-dimensional structure of the semiconductor device based on the butterfly valve control of the embodiments of the present application;

[0035] Figure 3 A schematic diagram of the three-dimensional structure of the butterfly valve of the embodiments of the present application;

[0036] Figure 4 A schematic diagram of the rear view structure of the butterfly valve of the embodiments of the present application;

[0037] Figure 5 A schematic diagram of the three-dimensional structure of the valve plate of the embodiments of the present application;

[0038] Figure 6 A schematic diagram of the three-dimensional structure of the shaft of the embodiments of the present application;

[0039] Figure 7 A schematic diagram of the half-section structure of the valve plate section of the embodiments of the present application;

[0040] Figure 8 A schematic diagram of the section of the valve plate opened to 5° of the embodiments of the present application;

[0041] Figure 9 A Figure 8 A schematic diagram of the enlarged A part;

[0042] Figure 10 A half-section schematic diagram of an eccentric circle scheme of another embodiment of the present application;

[0043] Figure 11 A rotation acceleration control curve of an embodiment of the present application;

[0044] Figure 12 A gas passing area increment curve of an embodiment of the present application;

[0045] Fig. 1 is a prior art; Fig. 2 is an embodiment of the present application; Fig. 10 is a valve body; Fig. 20 is a valve plate; Fig. 21 is a second clamping groove; Fig. 30 is a controller; Fig. 40 is a rotating shaft; Fig. 41 is a first clamping groove; Fig. 50 is a first connecting part; Fig. 60 is a second connecting part; Fig. 100 is a vacuumizing device; Fig. 200 is a reaction cavity; Fig. 210 is a spraying device; Fig. 300 is a connecting pipeline; a is an ellipse long side; b is an ellipse short side; d is a gap between the valve body and the valve plate; D is a valve body passage diameter; E is a gas flow direction; F is a valve body rotation direction. DETAILED DESCRIPTION

[0046] The above scheme will be further described in combination with specific embodiments. It should be understood that these embodiments are used to illustrate the present application and do not limit the scope of the present application. The implementation conditions used in the embodiments can be further adjusted according to the specific manufacturer's conditions, and the implementation conditions not mentioned are usually the conditions in the conventional experiments.

[0047] The present application discloses a butterfly valve and a semiconductor device, which comprises: a reaction module having a reaction cavity therein, a spraying device arranged on the reaction module, the spraying device being connected to a gas supply part, the spraying device being used to send reaction gas into the reaction cavity, and an exhaust port arranged on the reaction module; and a butterfly valve arranged between the reaction module and a vacuumizing device, the butterfly valve comprising: the vacuumizing device being connected to the exhaust port of the reaction module through a pipeline; a valve body and a controller arranged on the valve body, a flow passage being arranged in the valve body, a valve plate in a circular shape being arranged in the flow passage, a rotating shaft being connected to a middle part of the valve plate, an end part of the valve body being in an elliptical shape, the rotating shaft being connected to an output end of the controller, the rotating shaft being rotated to drive the valve plate to rotate based on the control of the controller, so as to open or close the flow passage. The effective pressure control is realized in the range of 0° to 90°, the pressure control range is increased, the pressure control efficiency of the butterfly valve is increased, and the pressure can be kept stable with a small gas flow. The flow passage is also referred to as a passage in the embodiment.

[0048] Next, the butterfly valve constant pressure control device proposed in the present application will be described in combination with the accompanying Figures 1-12

[0049] A semiconductor device based on butterfly valve control, which comprises:

[0050] ​The reaction module has a reaction chamber 200 and a spray device 210. The spray device 210 is connected to a gas supply unit and sends reaction gas into the reaction chamber 200 through the spray device 210. The reaction module is also equipped with an exhaust port. The reaction chamber 200 is equipped with a pressure sensor 220, which is used to know the current pressure in the reaction chamber.

[0051] A vacuum pumping device 100 is connected to the exhaust port of the reaction module via a pipe;

[0052] The reaction chamber 200 is connected to the vacuum pumping device 100 via a connecting pipe 300;

[0053] and a butterfly valve disposed between the reaction module and the vacuum device, which is disposed on the connecting pipe 300, the butterfly valve comprising:

[0054] The valve body 10 has a first connecting part 50 and a second connecting part 60 respectively on both sides, and the first connecting part 50 and the second connecting part 60 are combined with the connecting pipe 300 to form a seal;

[0055] A controller 30 is disposed on the valve body 10, and the controller 30 includes a motor and control circuitry;

[0056] A rotating shaft 40 is disposed inside the valve body 10 and is connected to the controller 30;

[0057] Valve plate 20, which is connected to rotating shaft 40. (Reference) Figure 7 A schematic diagram of the cross-section of valve plate 20 is shown. The cross-section of valve plate 20 at both ends of the valve body 10 radially is an elliptical arc with the longer side a in the diameter direction of valve body 10 and the shorter side b in the gas movement direction. The equation of this ellipse is y. 2 / a 2 +x 2 / b 2 =1, where a is the length of the longer side of the ellipse and b is the length of the shorter side of the ellipse. From this, we can derive the gap d1 between the valve plate and the valve body channel wall: d1 = D / 2 - a*COSθ (where D is the channel diameter and θ is the angle of rotation of the valve plate around the axis). The equation shows that within the range of 0° to 90°, the gap d(d1 / d2) increases with the increase of the rotation angle θ, and the rate of increase becomes increasingly larger. (Refer to...) Figure 1 1 represents a valve plate from the prior art, the cross-section of which is a concentric circle centered on the axis of rotation; 2 represents a valve plate from the present application embodiment, where the minimum clearance between the valve plate and the valve body is the same, but the side clearances differ by Δd. This difference is achieved through a combination of... Figure 8 and Figure 9It can be seen that, due to Δd being greater than 0. Taking 5° of rotation as an example, the position of the end 21 of the valve plate 20 on one side to the axis when the valve plate 20 is rotated by 5°, and the angle θ of the rotation (e.g. to 90°) can adjust the flow of the gas in the flow channel. In other embodiments, it can also be 4° or 3°. By this design, the angle of the valve plate that can be adjusted (the angle that can be adjusted in the range of θ ~ 90°) is increased. In the present embodiment, when the small angle θ of rotation is at or below a preset value (e.g. 5°), the gap between the valve plate with an elliptical cross section and the channel is greater than the gap between the valve plate with a concentric circular cross section and the channel.

[0058] In the present embodiment, the pressure sensor 220 is electrically connected to the control module, and the pressure sensor 220 is used to detect the pressure in the reaction chamber and feed back to the control module. When adjusting the pressure, the control module controls and adjusts the pressure by a PID method. When the reaction chamber is running, the amount of gas entering the reaction gas in the chamber is different according to different processes, which will cause the change of the pressure in the reaction chamber (also referred to as the chamber). The pressure in the reaction chamber is monitored by the pressure sensor, and the pressure information is fed back to the butterfly valve through the calculation of the upper computer. The angle of the opening of the valve plate of the butterfly valve is adjusted by the motor on the butterfly valve, and the vacuum pump at the tail gas end is always working during this period. The cooperation of the butterfly valve and the pressure gauge realizes the balance of the gas inlet and outlet in the chamber, so as to achieve a stable process pressure. Compared with the original circular structure valve plate, when the valve plate is adjusted slightly, a mutation and a sudden change of the opening angle will occur, which will cause the pressure to be unstable. The butterfly valve proposed in the present application can adjust the opening size from greater than 0°, and the pressure can be smoothly stabilized.

[0059] Reference Figure 10 , Figure 10 Fig. 6 is a schematic view of a half-section of an eccentric circle scheme of another embodiment of the present application. The two ends of the cross section of the valve plate are eccentric circles with an eccentric distance of R1 and an edge radius of R2, and R1 and R2 are both smaller than the maximum radius of the valve plate. The gap d2 between the valve plate and the channel wall is D / 2-(R1*COSθ+R2), where D is the diameter of the channel, and θ is the angle of rotation of the valve plate around the rotation axis. At this time, the gap Δd between the end and the channel wall is greater than 0, so that when the valve plate is rotated to 5° or below, the gap between the valve plate with an elliptical cross section and the channel (also referred to as the flow channel) is greater than the gap between the valve plate with a concentric circular cross section and the channel.

[0060] In the present embodiment, a turbine reducer (not shown in the figure) is arranged between the controller 30 and the rotation shaft 40, so that the valve plate 20 has a self-locking capability and can stop at any position.

[0061] In the embodiment, the rotating shaft 40 is provided with a first clamping slot 41, the slot depth of the first clamping slot 41 is equal to the radius of the rotating shaft 40, the valve plate 20 is provided with a second clamping slot in the middle, the slot depth of the second clamping slot 21 is half of the thickness of the valve plate 20, the first clamping slot 41 is connected with the second clamping slot 21 in a matched mode, so that the valve plate and the central axis of the rotating shaft coincide.

[0062] In another aspect of the embodiment, a control method of the butterfly valve is provided, the rotating speed of the valve plate 20 in the range of 0° to 5° is greater than the rotating speed of the valve plate 20 in the range of 5° to 90°. Through software analysis, the data of Figure 11 and Figure 12 can be obtained, Figure 11 is the rotating acceleration control curve of the embodiment, Figure 12 is the gas passing area increment curve of the embodiment; Figure 7 the longitudinal coordinate is the rotating acceleration of the valve plate 20, Figure 12 the longitudinal coordinate is the gas passing area increment, and the transverse coordinate is the rotating angle of the valve plate 20, the curve of series 1 indicates that when the rotating speed of the valve plate is constant, the gas passing area increment increases with the increase of the rotating angle, the curve of series 2 indicates that the rotating acceleration of the valve plate in the range of 0° to 5° is much greater than the rotating speed in the range of 5° to 90°, so that the gas passing area increment is a constant value, and the constant pressure control is realized.

[0063] The above embodiment is only for illustrating the technical concept and characteristics of the application, the purpose is to enable the person skilled in the art to understand the content of the application and to implement it, and cannot limit the protection scope of the application. Any equivalent transformation or modification according to the spirit and essence of the application should be covered in the protection scope of the application.

Claims

1. A butterfly valve, characterized in that, The butterfly valve comprises: a valve body and a controller arranged on the valve body, a flow channel is arranged in the valve body, a circular valve plate is arranged in the flow channel, a rotating shaft is connected to the middle part of the valve plate, the valve plate is oval-shaped in the axial cross section of the valve plate, the long side of the oval is in the diameter direction of the valve body, and the short side of the oval is in the thickness direction of the valve plate, the gap d1 between the valve plate and the wall of the flow channel is D / 2-a*cosθ, wherein D is the diameter of the flow channel, θ is the angle of rotation of the valve plate around the rotating shaft, and a is the length of the long side of the oval, the rotating shaft is connected to the output end of the controller, the rotating shaft is controlled to rotate by the controller to drive the valve plate to rotate, so as to open or close the flow channel, when the valve plate rotates between 0° and 5°, there is sufficient gas flow change, and the speed is controlled in a non-linear manner, so that the gas pressure is quickly and stably controlled.

2. The butterfly valve of claim 1, wherein first and second connecting portions are arranged on the two sides of the valve body respectively, and the first and second connecting portions are respectively and sealingly connected with a connecting pipeline.

3. The butterfly valve of claim 1, wherein the rotating shaft is provided with a first clamping groove, the valve plate is embedded in the first clamping groove, and the valve plate is fixedly connected by a connecting piece.

4. The butterfly valve of claim 3, wherein the slotting depth of the first clamping groove is equal to the radius of the rotating shaft.

5. The butterfly valve of claim 4, wherein a second clamping groove is arranged in the middle part of the valve plate, the slotting depth of the second clamping groove is half of the thickness of the valve plate, and the first clamping groove and the second clamping groove are connected in cooperation, so that the valve plate and the central axis of the rotating shaft coincide.

6. The butterfly valve of claim 1, wherein a speed reducer is arranged between the controller and the rotating shaft.

7. A semiconductor device, characterized by comprising: The butterfly valve according to any one of claims 1-6 is included, and the semiconductor device further comprises: a reaction module having a reaction cavity therein, a spraying device is arranged on the reaction module, the spraying device is connected with a gas supply part, reaction gas is sent into the reaction cavity through the spraying device, and an exhaust port is arranged on the reaction module; a vacuumizing device connected with the exhaust port of the reaction module through a pipeline; the butterfly valve is arranged in the connecting pipeline between the reaction module and the vacuumizing device.

8. A control method for a butterfly valve, for a butterfly valve as claimed in any one of claims 1-6, characterized in that, The method comprises: the rotating speed of the valve plate is greater when the rotating angle of the valve plate is in the range of 0° to 5° than when the rotating angle of the valve plate is in the range of 5° to 90°.

Citation Information

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