Wafer angle adjusting system and adjusting method for wafer proton irradiation

Abstract

The application discloses a wafer angle adjusting system and method for wafer proton irradiation, and the adjusting system comprises: a clamping part used for placing a wafer; an adjusting part connected with the clamping part; the adjusting part comprises a connecting piece used for connecting the clamping part; an adjusting piece connected with the connecting piece, at least three groups of the adjusting pieces are arranged and are equidistantly distributed, the clamping part is adjusted in a given area, and uniform irradiation of the wafer is completed; and a base frame used for placing the adjusting piece. The adjusting piece is designed to be at least three groups and equidistantly distributed, the clamping part is adjusted in a given area, and then the irradiation angle of the wafer is adjusted, so that the wafer receiving irradiation is matched with the beam incidence angle, and the wafer irradiation is more uniform.

Description

TECHNICAL FIELD

[0001] The application relates to the field of wafer irradiation, and particularly relates to a wafer angle adjusting system for wafer proton irradiation. BACKGROUND

[0002] The wafer refers to a silicon wafer used for manufacturing a silicon semiconductor circuit, and the raw material of the wafer is silicon. High-purity polysilicon is dissolved and added into a silicon crystal seed, and then the silicon crystal seed is slowly pulled to form a cylindrical single crystal silicon. After the silicon crystal rod is ground, polished and sliced, a silicon wafer is formed, that is, the wafer.

[0003] The existing wafer is generally provided with a scanning magnet at the upper end of a beam outlet during proton irradiation. The angle of the beam is adjusted by changing the input current of the scanning magnet. However, after the beam incidence angle is adjusted, the wafer is not adjusted in time, and thus the wafer irradiation is not uniform. SUMMARY

[0004] The application aims to provide a wafer angle adjusting system for wafer proton irradiation and an adjusting method to solve the above problems in the prior art.

[0005] Technical scheme: A wafer angle adjusting system for wafer proton irradiation comprises the following components.

[0006] A clamping device is used for placing the wafer.

[0007] An adjusting part is connected with the clamping device.

[0008] The adjusting part comprises a connecting piece used for connecting the clamping device.

[0009] An adjusting member is connected with the connecting piece, and at least three groups of the adjusting members are arranged at equal intervals so that the clamping device adjusts the angle in a given area and completes uniform irradiation of the wafer.

[0010] A base frame is used for placing the adjusting member.

[0011] The application is characterized in that at least three groups of the adjusting members are arranged at equal intervals so that the clamping device adjusts the angle in a given area and completes the irradiation angle adjustment of the wafer, and thus the wafer receives the irradiation and matches the beam incidence angle, and the wafer irradiation is more uniform.

[0012] In a further embodiment, the clamping device comprises a receiving shell.

[0013] The receiving shell is provided with a groove, and the groove is matched with the wafer and used for placing the wafer.

[0014] The groove is provided with a plurality of through holes.

[0015] In a further embodiment, the adjusting member comprises an adjusting frame, an adjusting motor mounted on the adjusting frame, an adjusting input shaft arranged at an output end of the adjusting motor, an input gear sleeved with the adjusting input shaft, an adjusting gear meshed with the input gear, an adjusting screw rod inserted in the adjusting gear and arranged in the adjusting frame, an adjusting sliding block sleeved with the adjusting screw rod and in sliding connection with the adjusting frame, and an adjusting shaft hinged with the adjusting sliding block.

[0016] In a further embodiment, an end of the adjusting shaft is provided with a universal joint.

[0017] In a further embodiment, the universal joint is connected with a connecting member; the universal joint is designed such that when the angle is adjusted, the phenomenon that the angle cannot be adjusted slightly is avoided.

[0018] The entire adjusting system is made of materials that are not easy to be activated in a proton irradiation environment, so that the system can be repeatedly used, thereby reducing the use cost.

[0019] The adjusting frame is mounted on a base frame.

[0020] In the beam irradiation process, the beam pipeline, the deflection magnet, and the deflection detector are included, the deflection detector is in communication with a control terminal, the adjusting system is in communication with the control terminal, the deflection detector detects the beam incidence angle through the control terminal, and then the adjusting system is controlled to adapt the wafer to the beam.

[0021] The beam enters through the beam pipeline, changes the input current through the deflection magnet to adjust the incidence angle of the beam, detects the incidence angle value through the deflection detector, and then completes the angle adjustment of the wafer through the adjusting part, so that the irradiation of the wafer is more uniform.

[0022] The change of the incidence angle can be mainly according to the selection of the beam incidence angle in the proton irradiation stage according to different processes.

[0023] A wafer angle adjusting method for wafer proton irradiation comprises:

[0024] Step 1, the beam enters through the beam pipeline, changes the input current through the deflection magnet to adjust the incidence angle of the beam;

[0025] Step 2, the incidence angle value is detected through the deflection detector, and then the angle adjustment of the wafer is completed through the adjusting part.

[0026] In a further embodiment, the step 2 further comprises:

[0027] Step 21, by adjusting the motor to drive the adjustment input shaft to rotate, so that the input gear rotates, and then drives the adjustment gear to rotate, drives the adjustment screw to rotate, so that the adjustment slide moves up and down along the adjustment frame, and then drives the adjustment shaft to move, and then drives the universal joint to move, so that the connecting piece swings, and through the cooperation of at least three groups of adjustment pieces, the connecting piece adjusts the angle in the specified area, and then drives the wafer to adjust the angle in the specified area, and then adapts to the incident angle adjustment of the beam.

[0028] Beneficial effects: The wafer angle adjusting system for wafer proton irradiation is disclosed, and the wafer angle adjusting system for wafer proton irradiation is disclosed. The present application is designed to be at least three groups and equidistantly distributed adjustment pieces, so that the clamped angle in the specified area is adjusted, and then the irradiation angle of the wafer is adjusted, and then the wafer receiving irradiation is matched with the beam incident angle, so that the wafer irradiation is more uniform. BRIEF DESCRIPTION OF DRAWINGS

[0029] Figure 1 It is a schematic diagram of the wafer proton irradiation state.

[0030] Figure 2 It is a schematic diagram of the adjusting system of the application.

[0031] Figure 3 It is a clamping schematic diagram of the application.

[0032] Figure 4 It is a schematic diagram of the adjustment piece of the application.

[0033] The reference signs are:

[0034] 1, clamping; 11, wafer; 12, receiving shell; 13, groove; 14, through hole;

[0035] 2, connecting piece; 3, adjustment piece; 31, adjustment frame; 32, adjustment motor; 33, input gear; 34, adjustment input shaft; 35, adjustment screw; 36, adjustment gear; 37, adjustment slide; 38, adjustment shaft; 39, universal joint; 4, base. DETAILED DESCRIPTION

[0036] The present application relates to a wafer angle adjusting system for wafer proton irradiation and adjusting method, which will be explained in detail through specific embodiments.

[0037] A wafer angle adjusting system for wafer proton irradiation, comprising:

[0038] Clamping 1 is used for placing wafer 11;

[0039] The adjusting part is connected with the clamping 1;

[0040] The adjusting part includes a connecting piece 2 for connecting the clamping 1;

[0041] The connecting piece 2 can be annular or other shapes, as long as the clamp 1 can be fixed.

[0042] The adjusting piece 3 is connected with the connecting piece 2, and at least three groups are arranged at equal intervals to adjust the angle of the clamp 1 in a predetermined area, and the uniform irradiation of the wafer 11 is completed.

[0043] The base frame 4 is used for placing the adjusting piece 3.

[0044] The adjusting piece 3 is designed to be at least three groups and arranged at equal intervals, so that the clamp 1 can adjust the angle in a predetermined area, and then the irradiation angle of the wafer 11 is adjusted, so that the wafer 11 matches the beam incidence angle when receiving irradiation, and the irradiation of the wafer 11 is more uniform.

[0045] The adjusting piece 3 is designed to be at least three groups and arranged at equal intervals, so that the clamp 1 can adjust the angle in a predetermined area, and then the irradiation angle of the wafer 11 is adjusted, so that the wafer 11 matches the beam incidence angle when receiving irradiation, and the irradiation of the wafer 11 is more uniform.

[0046] The clamp 1 comprises a receiving shell 12.

[0047] The receiving shell 12 is provided with a groove 13, and the groove 13 is matched with the wafer 11 and used for placing the wafer 11.

[0048] The groove 13 is provided with a plurality of through holes 14.

[0049] The adjusting piece 3 comprises an adjusting frame 31, an adjusting motor 32 installed on the adjusting frame 31, an adjusting input shaft 34 arranged at the output end of the adjusting motor 32, an input gear 33 sleeved with the adjusting input shaft 34, an adjusting gear 36 engaged with the input gear 33, an adjusting lead screw 35 inserted in the adjusting gear 36 and arranged in the adjusting frame 31, an adjusting sliding block 37 sleeved with the adjusting lead screw 35 and slidably connected with the adjusting frame 31, and an adjusting shaft 38 hinged with the adjusting sliding block 37.

[0050] The end of the adjusting shaft 38 is provided with a universal joint 39.

[0051] The universal joint 39 is connected with the connecting piece 2, and the universal joint 39 is designed to avoid the phenomenon that the angle cannot be adjusted.

[0052] The entire adjusting system is made of materials that are not easy to activate in a proton irradiation environment, so that it can be repeatedly used, thereby reducing the use cost.

[0053] The adjusting frame 31 is installed on the base frame 4.

[0054] The beam irradiation process mainly comprises a beam pipeline, a deflection magnet, and a deflection detector, the deflection detector being in communication with a control terminal, an adjusting system being in communication with the control terminal, the deflection detector detecting the incident angle of the beam through the control terminal, and the adjusting system being controlled to adapt the wafer 11 to the beam.

[0055] The beam enters through the beam pipeline, changes the input current through the deflection magnet to adjust the incident angle of the beam, detects the incident angle value through the deflection detector, and then adjusts the angle of the wafer 11 through the adjusting part to make the irradiation of the wafer 11 more uniform.

[0056] Working principle: the adjusting motor 32 drives the adjusting input shaft 34 to rotate, the input gear 33 rotates, the adjusting gear 36 rotates, the adjusting screw 35 rotates, the adjusting slide block 37 ascends along the adjusting frame 31, the adjusting shaft 38 moves, the universal joint moves, the connecting piece 2 swings, at least three groups of adjusting pieces 3 work together to adjust the angle of the connecting piece 2 in a given area, the wafer 11 is adjusted in a given area, the incident angle of the beam is adjusted, and the wafer 11 is irradiated more uniformly.

[0057] The preferred embodiments of the present application are described in detail above with reference to the drawings, but the present application is not limited to the specific details in the above embodiments, and various equivalent transformations can be made to the technical solutions of the present application within the technical concept of the present application, and these equivalent transformations all belong to the protection scope of the present application.

Claims

1. A wafer angle adjustment system for proton irradiation, comprising: Clamp (1) is used to place the wafer (11); The adjustment part is connected to the clamp (1); The adjustment part is characterized in that it includes a connector (2) for connecting the clamp (1). Adjustment component (3), connected to connector (2), at least three sets are provided and distributed at equal intervals, so that clamp (1) can adjust the angle within a predetermined area to complete the uniform irradiation of wafer (11); the adjustment component (3) includes adjustment frame (31), adjustment motor (32) mounted on adjustment frame (31), adjustment input shaft (34) set at the output end of adjustment motor (32), input gear (33) sleeved on adjustment input shaft (34), adjustment gear (36) meshing with input gear (33), adjustment screw (35) inserted into adjustment gear (36) and set in adjustment frame (31), adjustment slider (37) sleeved on adjustment screw (35) and slidably connected to adjustment frame (31), and adjustment shaft (38) hinged to adjustment slider (37); The base frame (4) is used to place the adjustment parts (3); The clamp (1) includes a housing (12).

2. The wafer angle adjustment system for proton irradiation according to claim 1, characterized in that: The storage shell (12) has a groove (13) inside, which is adapted to the wafer (11) and is used to place the wafer (11). The groove (13) has several through holes (14). The end of the adjusting shaft (38) is provided with a universal joint (39); the universal joint (39) is connected to the connector (2); the adjusting frame (31) is mounted on the base frame (4).

3. A method for adjusting the wafer angle for proton irradiation, based on the wafer angle adjustment system for proton irradiation as described in claim 1 or 2, characterized in that it comprises: Step 1: The beam enters through the beam tube, and the input current is changed by the deflecting magnet to adjust the incident angle of the beam. Step 2: The incident angle value is detected by the deflection detector, and then the angle of wafer 11 is adjusted by the adjustment unit. The specific steps include: by adjusting the motor (32) to drive the adjustment input shaft (34) to rotate, the input gear (33) to rotate, which in turn drives the adjustment gear (36) to rotate, drives the adjustment screw (35) to rotate, and causes the adjustment slider (37) to rise and fall along the adjustment frame (31), which in turn drives the adjustment shaft (38) to move, which in turn drives the universal joint to move, causing the connector (2) to swing. Through the coordinated work of at least three sets of adjustment components (3), the connector (2) adjusts the angle in the predetermined area, which in turn drives the wafer (11) to adjust the angle in the predetermined area, thereby adapting to the adjustment of the incident angle of the beam.

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