Radiation detector, radiation image photographing apparatus, and method for manufacturing radiation detector

Abstract

The radiation detector includes a sensor substrate, a conversion layer, and a reinforcement substrate. The sensor substrate has a plurality of pixels formed in a pixel region of a flexible substrate, which accumulate charges generated by light converted from radiation. The conversion layer is provided on one side of a first surface of the substrate where the pixels are provided, and converts radiation into light. The reinforcement substrate is for strengthening the rigidity of the substrate, is provided on a surface of the conversion layer opposite to the surface on the substrate side, and includes a porous layer having a plurality of through holes.

Description

Technical Field

[0001] The present invention relates to a radiation detector, a radiation image photographing apparatus, and a method for manufacturing a radiation detector. Background Art

[0002] Conventionally, there has been known a radiation image photographing apparatus that performs radiation photography for medical diagnosis purposes. In these radiation image photographing apparatuses, a radiation detector is used to detect radiation that has passed through a subject and generate a radiation image.

[0003] As the radiation detector, there is a radiation detector that includes: a conversion layer such as a scintillator that converts radiation into light; and a substrate provided with a plurality of pixels that accumulate charges generated from the light converted by the conversion layer. It is known that a flexible substrate is used as the base material of the sensor substrate of such a radiation detector. By using a flexible substrate, the radiation image photographing apparatus can be made lighter, and it is sometimes easier to photograph a subject.

[0004] However, there is known the following technique: when a load or impact is applied to the radiation image photographing apparatus, etc., the substrate using a flexible substrate is likely to be bent, and therefore, in order to suppress the influence of the impact, etc., on the radiation detector, the bending rigidity of the radiation detector is made high.

[0005] For example, Japanese Unexamined Patent Application Publication No. 2012 - 173275 discloses the following technique: a reinforcing member that serves as a reinforcing substrate is provided on the side opposite to the scintillator side of a thin film portion that detects fluorescence as an electric signal. And, for example, Japanese Unexamined Patent Application Publication No. 2014 - 081363 discloses the following technique: a reinforcing substrate is attached to the radiation incident side or the side opposite to the radiation incident side of a photoelectric conversion panel. Summary of the Invention

[0006] Technical Problem to be Solved by the Invention

[0007] In the techniques described in Japanese Unexamined Patent Application Publication No. 2012 - 173275 and Japanese Unexamined Patent Application Publication No. 2014 - 081363, as described above, although the bending rigidity of the radiation detector can be increased, the overall weight of the radiation detector increases due to the reinforcing substrate. Therefore, in the techniques described in Patent Document 1 and Patent Document 2, the effect of making the radiation image photographing apparatus lighter by using a flexible substrate is sometimes not fully obtained.

[0008] The present invention provides a radiation detector, a radiation image photographing apparatus, and a method for manufacturing a radiation detector that have high bending rigidity and are lightweight.

[0009] Means for Solving the Technical Problem

[0010] The radiation detector according to the first aspect of the present invention includes: a substrate that forms a plurality of pixels for accumulating charges generated from light converted from radiation in a pixel region of a flexible substrate; a conversion layer that is provided on one side of the surface of the substrate where the pixels are provided and converts radiation into light; and a reinforcement substrate that is used to reinforce the rigidity of the substrate, is provided on the surface of the conversion layer opposite to the surface on the substrate side, and includes a porous layer having a plurality of through holes.

[0011] Moreover, in the radiation detector according to the second aspect of the present invention, in the radiation detector according to the first aspect, the opening diameter of each of the plurality of through holes is 0.5 mm or more and 50 mm or less, the pitch is 1 mm or more and 50 mm or less, and the aperture ratio is 10% or more and 50% or less.

[0012] Furthermore, in the radiation detector according to the third aspect of the present invention, in the radiation detector according to the first or second aspect, the porous layer has a plurality of through holes with hexagonal openings.

[0013] In addition, in the radiation detector according to the fourth aspect of the present invention, in the radiation detector according to the third aspect, the porous layer has a honeycomb structure.

[0014] Also, in the radiation detector according to the fifth aspect of the present invention, in the radiation detector according to the first aspect, the porous layer has a porous structure with a porosity of 15% or more and 50% or less and a pore diameter of 0.3 μm or more and 5 mm or less.

[0015] In addition, in the radiation detector according to the sixth aspect of the present invention, in the radiation detector according to the first aspect, the porous layer has a groove structure in which the extending direction of the grooves is in the in-plane direction of the reinforcement substrate.

[0016] Moreover, in the radiation detector according to the seventh aspect of the present invention, in the radiation detector according to the sixth aspect, the pitch of the groove structure is not less than the thickness of the groove structure and not more than three times the thickness.

[0017] Further, in the radiation detector according to the eighth aspect of the present invention, in the radiation detector according to any one of the first to seventh aspects, the material of the porous layer includes at least one of CFRP (Carbon Fiber Reinforced Plastic), CFRTP (Carbon Fiber Reinforced Thermo Plastics), PVC (Polyvinyl Chloride), PET (Polyethylene Terephthalate), PP (PolyPropylene), PE (PolyEthylene), aluminum, and magnesium.

[0018] Further, in the radiation detector according to the ninth aspect of the present invention, in the radiation detector according to any one of the first to seventh aspects, the main component of the material of the porous layer is CFRP (Carbon Fiber Reinforced Plastic).

[0019] Further, in the radiation detector according to the tenth aspect of the present invention, in the radiation detector according to any one of the first to ninth aspects, the density of the through holes in each of the plurality of regions where the porous layer is arranged along the surface of the substrate on which the pixels are provided is different.

[0020] Further, in the radiation detector according to the eleventh aspect of the present invention, in the radiation detector according to the tenth aspect, the density of the through holes in the region corresponding to the position where the circuit unit is provided is smaller than the density of the through holes in other regions, and the circuit unit is used to read the charge accumulated in the pixels.

[0021] Further, in the radiation detector according to the twelfth aspect of the present invention, in the radiation detector according to the tenth aspect, the density of the through holes in the region corresponding to the power supply unit that supplies power to the circuit unit is greater than the density of the through holes in other regions, and the circuit unit is used to read the charge accumulated in the pixels.

[0022] Further, in the radiation detector according to the thirteenth aspect of the present invention, in the radiation detector according to any one of the first to twelfth aspects, the reinforcement substrate includes a laminate formed by laminating a plurality of porous layers.

[0023] Further, in the radiation detector according to the fourteenth aspect of the present invention, in the radiation detector according to any one of the first to thirteenth aspects, the porous layer has a protective plate on at least one of the surface on the conversion layer side and the surface on the side opposite to the conversion layer.

[0024] Further, the radiation detector according to the 15th aspect of the present invention further includes an antistatic layer provided on one side of the substrate on the surface opposite to the surface on which the pixels are provided, among the radiation detectors according to any one of the 1st to 14th aspects.

[0025] Further, in the radiation detector according to the 16th aspect of the present invention, among the radiation detectors according to the 15th aspect, the antistatic layer is a laminated film of a resin film and a metal film.

[0026] Further, the radiation image photographing apparatus according to the 17th aspect of the present invention includes: the radiation detector according to the present invention; and a circuit unit configured to read charges accumulated in a plurality of pixels.

[0027] Further, the method for manufacturing a radiation detector according to the 18th aspect of the present invention includes: a step of providing a flexible substrate on a support and forming a substrate, wherein a plurality of pixels configured to accumulate charges generated from light converted from radiation are provided in a pixel region on a first surface of the substrate; a step of providing a conversion layer configured to convert radiation into light on one side of the surface of the substrate on which the pixels are provided; a step of providing a reinforcing substrate configured to enhance the rigidity of the substrate on a surface of the conversion layer opposite to the surface on the substrate side, the reinforcing substrate including a porous layer having a plurality of through holes; and a step of peeling the substrate from the support.

[0028] Further, in the method for manufacturing a radiation detector according to the 19th aspect of the present invention, among the methods for manufacturing a radiation detector according to the 18th aspect, the step of peeling the substrate from the support is performed after the reinforcing substrate is provided on the substrate.

[0029] Advantageous Effects of the Invention

[0030] According to the present invention, the bending rigidity is high and the heat resistance can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 is a block diagram showing an example of the main part structure of the electrical system in the radiation image photographing apparatus according to the embodiment.

[0032] Figure 2 is a plan view showing an example of the radiation detector according to the embodiment as viewed from the first surface side of the substrate.

[0033] Figure 3 is Figure 2 a cross-sectional view taken along line A-A of an example of the radiation detector shown.

[0034] Figure 4A is a plan view showing an example of the porous layer having a punching structure as viewed from the upper surface side of the radiation detector.

[0035] Figure 4B is Figure 4AAn example of a cross-sectional view taken along line B-B of the porous layer shown.

[0036] Figure 5A It is a plan view of another example of a porous layer having a punching structure as viewed from the upper surface side of the radiation detector.

[0037] Figure 5B It is a plan view of another example of a porous layer having a punching structure as viewed from the upper surface side of the radiation detector.

[0038] Figure 6A It is a plan view of an example of a porous layer having a honeycomb structure as viewed from the upper surface side of the radiation detector.

[0039] Figure 6B It is viewed from the side of the radiation detector Figure 6A A side view of the porous layer shown.

[0040] Figure 6C It is a side view of another example of a porous layer having a honeycomb structure as viewed from the side of the radiation detector.

[0041] Figure 7A It is a side view of an example of a porous layer having a groove structure as viewed from the side of the radiation detector.

[0042] Figure 7B It is a side view of another example of a porous layer having a groove structure as viewed from the side of the radiation detector.

[0043] Figure 8 It is a side view of an example of a porous layer having a porous structure as viewed from the side of the radiation detector.

[0044] Figure 9A It is a cross-sectional view of an example of a radiation image capturing device according to an embodiment.

[0045] Figure 9B It is a cross-sectional view of an example of a radiation image capturing device according to an embodiment.

[0046] Figure 10A It is a diagram showing an example of a method for manufacturing a radiation image capturing device according to an embodiment.

[0047] Figure 10B It is a diagram showing an example of a method for manufacturing a radiation image capturing device according to an embodiment.

[0048] Figure 10C It is a diagram showing an example of a method for manufacturing a radiation image capturing device according to an embodiment.

[0049] Figure 10D It is a diagram showing an example of a method for manufacturing a radiation image capturing device according to an embodiment.

[0050] Figure 10E It is a diagram showing an example of a method for manufacturing a radiation image photographing apparatus according to an embodiment.

[0051] Figure 10F It is a diagram showing an example of a method for manufacturing a radiation image photographing apparatus according to an embodiment.

[0052] Figure 11A It is a sectional view taken along line A-A of another example of a radiation detector according to an embodiment.

[0053] Figure 11B It is a sectional view taken along line A-A of another example of a radiation detector according to an embodiment.

[0054] Figure 11C It is a sectional view taken along line A-A of another example of a radiation detector according to an embodiment.

[0055] Figure 12A It is a sectional view taken along line A-A of an example of a radiation detector according to Modification 1.

[0056] Figure 12B It is a sectional view taken along line A-A of another example of a radiation detector according to Modification 1.

[0057] Figure 13 It is a sectional view taken along line A-A of an example of a radiation detector according to Modification 2.

[0058] Figure 14A It is a diagram showing an example of a porous layer for explaining Modification 3.

[0059] Figure 14B It is a diagram showing another example of a porous layer for explaining Modification 3.

[0060] Figure 15A It is a sectional view of an example of a radiation image photographing apparatus according to Modification 4.

[0061] Figure 15B It is a sectional view of another example of a radiation image photographing apparatus according to Modification 4.

[0062] Figure 15C It is a sectional view of another example of a radiation image photographing apparatus according to Modification 4. Detailed Embodiments

[0063] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In addition, the present embodiment does not limit the present invention.

[0064] The radiation detector according to the present embodiment has a function of detecting radiation that has passed through a subject and outputting image information representing a radiation image of the subject. The radiation detector according to the present embodiment includes a sensor substrate and a conversion layer that converts radiation into light (refer to Figure 3 the sensor substrate 12 and the conversion layer 14 of the radiation detector 10). The sensor substrate 12 of the present embodiment is an example of the substrate of the present invention.

[0065] First, Figure 1 an outline of an example of the structure of the electrical system in the radiation image photographing apparatus according to the present embodiment will be described. Figure 1 is a block diagram showing an example of the main part structure of the electrical system in the radiation image photographing apparatus according to the present embodiment.

[0066] As Figure 1 shown, the radiation image photographing apparatus 1 according to the present embodiment includes a radiation detector 10, a control unit 100, a driving unit 102, a signal processing unit 104, an image memory 106, and a power supply unit 108. At least one of the control unit 100, the driving unit 102, and the signal processing unit 104 in the present embodiment is an example of the circuit unit of the present invention. Hereinafter, the control unit 100, the driving unit 102, and the signal processing unit 104 will be collectively referred to as the "circuit unit".

[0067] The radiation detector 10 includes a sensor substrate 12 and a conversion layer 14 that converts radiation into light (refer to Figure 3 ). The sensor substrate 12 includes a flexible base material 11 and a plurality of pixels 30 provided on the first surface 11A of the base material 11. In addition, hereinafter, the plurality of pixels 30 may sometimes be simply referred to as "pixels 30".

[0068] As Figure 1 shown, each pixel 30 in the present embodiment includes a sensor unit 34 that generates and accumulates charges according to the light converted by the conversion layer, and a switching element 32 that reads the charges accumulated by the sensor unit 34. In the present embodiment, as an example, a thin film transistor (TFT: Thin Film Transistor) is used as the switching element 32. Therefore, hereinafter, the switching element 32 will be referred to as "TFT32". In the present embodiment, the sensor unit 34 and the TFT32 are formed, and as a planarization layer, a layer for forming the pixel 30 on the first surface 11A of the base material 11 is provided.

[0069] The pixels 30 are two-dimensionally arranged on the pixel region 35 of the sensor substrate 12 along one direction (the scanning wiring direction corresponding to the horizontal direction of Figure 1 , hereinafter also referred to as the "row direction") and a direction intersecting the row direction (the signal wiring direction corresponding to the vertical direction of Figure 1 , hereinafter also referred to as the "column direction").Figure 1 In this figure, the arrangement of pixels 30 is simply shown. For example, 1024 pixels are arranged in the row direction and 1024 pixels are arranged in the column direction for the pixels 30.

[0070] Moreover, in the radiation detector 10, a plurality of scan wirings 38 for controlling the switching states (on and off) of the TFTs 32 provided for each row of the pixels 30 and a plurality of signal wirings 36 for reading the charges accumulated in the sensor section 34 provided for each column of the pixels 30 are provided so as to cross each other. Each of the plurality of scan wirings 38 is connected to the drive section 102 via a flexible cable 112A, whereby the drive signals for driving the TFTs 32 to control the switching states output from the drive section 102 flow on each of the plurality of scan wirings 38. Also, each of the plurality of signal wirings 36 is connected to the signal processing section 104 via a flexible cable 112B, whereby the charges read from each pixel 30 are output as electrical signals to the signal processing section 104. The signal processing section 104 generates and outputs image data corresponding to the input electrical signals. In addition, in the present embodiment, when referring to the flexible cable 112 as being "connected", it means an electrical connection.

[0071] A control section 100 described later is connected to the signal processing section 104, and the image data output from the signal processing section 104 is sequentially output to the control section 100. An image memory 106 is connected to the control section 100, and the image data sequentially output from the signal processing section 104 is sequentially stored in the image memory 106 under the control of the control section 100. The image memory 106 has a storage capacity capable of storing a prescribed number of pieces of image data, and each time a radiation image is taken, the image data obtained by the taking is sequentially stored in the image memory 106.

[0072] The control section 100 includes a CPU (Central Processing Unit) 100A, a memory 100B including a ROM (ReadOnly Memory) and a RAM (Random Access Memory), and a nonvolatile storage section 100C such as a flash memory. As an example of the control section 100, a microcomputer or the like can be cited. The control section 100 controls the overall operation of the radiation image photographing apparatus 1.

[0073] In addition, in the radiation image photographing apparatus 1 of the present embodiment, the image memory 106, the control section 100, etc. are formed on a control substrate 110.

[0074] Further, in order to apply a bias voltage to each pixel 30, a common wiring 39 is provided in the signal wiring 36 direction in the sensor section 34 of each pixel 30. The common wiring 39 is connected to a bias power supply (not shown) outside the sensor substrate 12, whereby a bias voltage is applied from the bias power supply to each pixel 30.

[0075] The power supply unit 108 supplies power to various components and various circuits such as the control unit 100, the drive unit 102, the signal processing unit 104, the image memory 106, and the power supply unit 108. In addition, in Figure 1 order to avoid complication, the illustration of the wiring connecting the power supply unit 108 to various components and various circuits is omitted.

[0076] In addition, the radiation detector 10 will be described in detail. Figure 2 is an example of a plan view of the radiation detector 10 of the present embodiment as viewed from the first surface 11A side of the base material 11. And, Figure 3 is Figure 2 an example of a cross-sectional view taken along line A-A of the radiation detector 10 in

[0077] The base material 11 is flexible and is, for example, a resin sheet containing a plastic such as PI (PolyImide). The thickness of the base material 11 may be a thickness that can obtain the desired flexibility according to the hardness of the material and the size of the sensor substrate 12, that is, according to the area of the first surface 11A or the second surface 11B. As an example of having flexibility, it means that when the rectangular base material 11 is a single body, in a state where one side of the base material 11 is fixed, at a position 10 cm away from the fixed side, the base material 11 sags by 2 mm or more (becomes lower than the height of the fixed side) due to the gravity of its own weight. As a specific example in the case where the base material 11 is a resin sheet, the thickness may be 5 μm to 125 μm, and more preferably 20 μm to 50 μm.

[0078] In addition, the base material 11 has characteristics that can withstand the manufacture of the pixel 30. In the present embodiment, it has characteristics that can withstand the manufacture of amorphous silicon TFT (a-Si TFT). As the characteristics of such a base material 11, the coefficient of thermal expansion (CTE: Coefficient of Thermal Expansion) at 300 °C to 400 °C is preferably the same level as that of an amorphous silicon (a-Si) wafer (for example, ±5 ppm / K), and specifically, it is preferably 20 ppm / K or less. And, as the thermal shrinkage rate of the base material 11, the thermal shrinkage rate at 400 °C in a state where the thickness is 25 μm is preferably 0.5% or less. And, the elastic modulus of the base material 11 preferably does not have a transition point that a normal PI has in the temperature range between 300 °C and 400 °C, and the elastic modulus at 500 °C is 1 GPa or more.

[0079] Further, in order to suppress backward scattered light based on itself, the base material 11 of the present embodiment preferably has a particle layer containing inorganic particles for absorbing backward scattered light with an average particle diameter of 0.05 μm or more and 2.5 μm or less. In addition, as such inorganic particles, in the case of the resin base material 11, an inorganic substance having an atomic number greater than that of the organic substance constituting the base material 11 and an atomic number of 30 or less is preferably used. Specific examples of such particles include SiO2, which is an oxide of Si with an atomic number of 14, MgO, which is an oxide of Mg with an atomic number of 12, Al2O3, which is an oxide of Al with an atomic number of 13, and TiO2, which is an oxide of Ti with an atomic number of 22. Specific examples of the resin sheet having such characteristics include XENOMAX (registered trademark).

[0080] In addition, the above thickness in the present embodiment was measured using a micrometer. The coefficient of thermal expansion was measured in accordance with JIS K7197:1991. Further, for the measurement, test pieces were cut by changing the angle by 15 degrees each time from the main surface of the base material 11, the coefficient of thermal expansion of each cut test piece was measured, and the highest value was set as the coefficient of thermal expansion of the base material 11. In the MD (Machine Direction: longitudinal) direction and the TD (Transverse Direction: transverse) direction, the coefficient of thermal expansion was measured at intervals of 10 °C from -50 °C to 450 °C, and (ppm / °C) was converted to (ppm / K). For the measurement of the coefficient of thermal expansion, a TMA4000S device manufactured by MAC Science Co., Ltd. was used, the sample length was set to 10 mm, the sample width was set to 2 mm, the initial load was set to 34.5 g / mm 2 , the heating rate was set to 5 °C / minute, and the environment was set to argon.

[0081] The base material 11 having the desired flexibility is not limited to resin base materials such as resin sheets. For example, the base material 11 can be a relatively thin glass substrate or the like. As a specific example of the case where the base material 11 is a glass substrate, when the size of one side is about 43 cm, if the thickness is 0.3 mm or less, it has flexibility. Therefore, as long as the thickness is 0.3 mm or less, it can be a desired glass substrate.

[0082] As Figure 2 and Figure 3 shown, a plurality of pixels 30 are provided on the first surface 11A of the base material 11. In the present embodiment, the region of the first surface 11A of the base material 11 where the pixels 30 are provided is defined as a pixel region 35.

[0083] Further, a conversion layer 14 is provided on the first surface 11A of the base material 11. The conversion layer 14 of the present embodiment covers the pixel region 35. In the present embodiment, as an example of the conversion layer 14, a scintillator containing CsI (cesium iodide) is used. As such a scintillator, preferably, for example, CsI:Tl (cesium iodide added with thallium) or CsI:Na (cesium iodide added with sodium) having an emission spectrum of 400 nm to 700 nm when irradiated with X-rays is used. In addition, the emission peak wavelength of CsI:Tl in the visible light region is 565 nm.

[0084] In the case where the conversion layer 14 is formed by a vapor deposition method, as Figure 3 shown, the conversion layer 14 is formed to have an inclination such that the thickness gradually thins toward its outer edge. Hereinafter, the central region of the conversion layer 14, where the thickness is regarded as substantially constant when manufacturing errors and measurement errors are ignored, is referred to as the central portion 14A. And, the outer peripheral region of the conversion layer 14 having a thickness of, for example, 90% or less with respect to the average thickness of the central portion 14A of the conversion layer 14 is referred to as the peripheral portion 14B. That is, the conversion layer 14 has an inclined surface inclined with respect to the sensor substrate 12 in the peripheral portion 14B. In addition, hereinafter, for the sake of convenience of explanation, when referring to "upper" and "lower" in the sensor substrate 12, based on the conversion layer 14, the side of the conversion layer 14 facing the sensor substrate 12 is referred to as "lower", and the opposite side is referred to as "upper". For example, the conversion layer 14 is provided on the sensor substrate 12, and the inclined surface in the peripheral portion 14B of the conversion layer 14 is inclined such that the conversion layer 14 gradually expands from the upper side toward the lower side.

[0085] Further, as Figure 3 shown, an adhesive layer 60, a reflective layer 62, an adhesive layer 64, and a protective layer 66 are provided on the conversion layer 14 of the present embodiment.

[0086] The adhesive layer 60 covers the entire surface of the conversion layer 14. The adhesive layer 60 has the function of fixing the reflective layer 62 to the conversion layer 14. The adhesive layer 60 preferably has light transmissivity. As the material of the adhesive layer 60, for example, acrylic adhesives, hot-melt adhesives, and silicone adhesives can be used. As acrylic adhesives, for example, polyurethane acrylate, acrylic resin acrylate, and epoxy resin acrylate can be cited. As hot-melt adhesives, for example, thermoplastics such as EVA (ethylene / vinyl acetate copolymer resin), EAA (ethylene-acrylic acid copolymer resin), EEA (ethylene-ethyl acrylate copolymer resin), and EMMA (ethylene-methyl methacrylate copolymer) can be cited. The thickness of the adhesive layer 60 is preferably 2 μm or more and 7 μm or less. By setting the thickness of the adhesive layer 60 to 2 μm or more, the effect of fixing the reflective layer 62 to the conversion layer 14 can be fully exerted. In addition, the risk of forming an air layer between the conversion layer 14 and the reflective layer 62 can be suppressed. If an air layer is formed between the conversion layer 14 and the reflective layer 62, multiple reflections may occur in which the light emitted from the conversion layer 14 is repeatedly reflected between the air layer and the conversion layer 14 and between the air layer and the reflective layer 62. And, by setting the thickness of the adhesive layer 60 to 7 μm or less, a decrease in MTF (Modulation Transfer Function) and DQE (Detective Quantum Efficiency) can be suppressed.

[0087] The reflective layer 62 covers the entire surface of the adhesive layer 60. The reflective layer 62 has the function of reflecting the light converted by the conversion layer 14. As the material of the reflective layer 62, it is preferably composed of a metal or a resin material containing a metal oxide. As the material of the reflective layer 62, for example, white PET (Polyethylene Terephthalate), TiO2, Al2O3, foamed white PET, and specularly reflective aluminum can be used. White PET is PET to which a white pigment such as TiO2 or barium sulfate is added, and foamed white PET refers to white PET having a porous surface. And, as the material of the reflective layer 62, a laminated film of a resin film and a metal film can be used. As the laminated film of a resin film and a metal film, for example, an ALPET (registered trademark) sheet in which aluminum foil or the like is adhered to an insulating sheet (film) such as polyethylene terephthalate and aluminum is laminated can be cited. The thickness of the reflective layer 62 is preferably 10 μm or more and 40 μm or less. Thus, by providing the reflective layer 62 on the conversion layer 14, the light converted by the conversion layer 14 can be effectively guided to the pixels 30 of the sensor substrate 12.

[0088] The adhesive layer 64 covers the entire surface of the reflective layer 62. The end of the adhesive layer 64 extends to the first surface 11A of the base material 11. That is, the adhesive layer 64 adheres to the base material 11 of the sensor substrate 12 at its end. The adhesive layer 64 has a function of fixing the reflective layer 62 and the protective layer 66 to the conversion layer 14. As the material of the adhesive layer 64, the same material as that of the adhesive layer 60 can be used, but the adhesive force of the adhesive layer 64 is preferably greater than that of the adhesive layer 60.

[0089] The protective layer 66 is provided in a state of covering the entire conversion layer 14 and its end covering a part of the sensor substrate 12. The protective layer 66 functions as a moisture-proof film for preventing moisture from entering the conversion layer 14. As the material of the protective layer 66, for example, an organic film containing organic materials such as PET, PPS (PolyPhenylone Sulfide), OPP (Oriented PolyPropylene), PEN (PolyEthylene Naphthalate), PI, etc., or PARYLENE (registered trademark) can be used. Also, as the protective layer 66, a laminated film of a resin film and a metal film can be used. As the laminated film of a resin film and a metal film, for example, a sheet of ALPET (registered trademark) can be cited.

[0090] On the other hand, as Figure 2 and Figure 3 shown, a plurality of (16 in Figure 2 ) terminals 113 are provided at the outer edge portion of the first surface 11A of the base material 11. As the terminals 113, an anisotropic conductive film or the like is used. As Figure 2 and Figure 3 shown, the flexible cable 112 is electrically connected to each of the plurality of terminals 113. Specifically, as Figure 2 shown, the flexible cable 112A is thermocompression bonded to each of the plurality of (8 in Figure 2 ) terminals 113 provided on one side of the base material 11. The flexible cable 112A is a so-called COF (Chip on Film), and a driving IC (Integrated Circuit) 210 is mounted on the flexible cable 112A. The driving IC 210 is connected to a plurality of signal lines included in the flexible cable 112A. In addition, in the present embodiment, when the flexible cable 112A and the flexible cable 112B described later are collectively referred to without distinction, they are simply referred to as "flexible cable 112".

[0091] The other end of the flexible cable 112A, which is opposite to one end electrically connected to the terminal 113 of the sensor substrate 12, is electrically connected to the driving substrate 200. As an example, in the present embodiment, a plurality of signal lines included in the flexible cable 112A are thermocompression bonded to the driving substrate 200, thereby being electrically connected to circuits, components, etc. (not shown) mounted on the driving substrate 200. In addition, the method of electrically connecting the driving substrate 200 and the flexible cable 112A is not limited to the present embodiment. For example, it can be set to be electrically connected by a connector. As such a connector, a connector with a ZIF (Zero Insertion Force) structure or a Non-ZIF (non-zero insertion force) structure connector, etc. can be cited.

[0092] The driving substrate 200 of the present embodiment is a flexible PCB (Printed Circuit Board) substrate, which is a so-called flexible substrate. And the circuit components (not shown) mounted on the driving substrate 200 are mainly components for processing digital signals (hereinafter referred to as "digital components"). The digital components tend to have a relatively smaller area (size) than the analog components described later. As a specific example of the digital components, a digital buffer, a bypass capacitor, a pull-up / pull-down resistor, a damping resistor, an EMC (Electro Magnetic Compatibility) countermeasure chip component, a power supply IC, etc. can be cited. In addition, the driving substrate 200 does not necessarily have to be a flexible substrate, and can be a non-flexible rigid substrate or a rigid-flexible substrate.

[0093] In the present embodiment, the driving unit 102 is implemented by the driving substrate 200 and the driving IC 210 mounted on the flexible cable 112A. In addition, the driving IC 210 includes circuits different from the digital components mounted on the driving substrate 200 among various circuits and components for implementing the driving unit 102.

[0094] On the other hand, the flexible cable 112B is electrically connected to each of a plurality of ( Figure 2 in this case, eight) terminals 113 provided on a side intersecting with a side of the base material 11 to which the flexible cable 112A is electrically connected. Similar to the flexible cable 112A, the flexible cable 112B is a so-called COF, and a signal processing IC 310 is mounted on the flexible cable 112B. The signal processing IC 310 is connected to a plurality of signal lines (not shown) included in the flexible cable 112B.

[0095] The other end of the flexible cable 112B, which is opposite to one end electrically connected to the terminal 113 of the sensor substrate 12, is electrically connected to the signal processing substrate 300. As an example, in the present embodiment, a plurality of signal lines included in the flexible cable 112B are thermocompression bonded to the signal processing substrate 300, thereby being electrically connected to circuits, components, etc. (not shown) mounted on the signal processing substrate 300. In addition, the method of electrically connecting the signal processing substrate 300 and the flexible cable 112B is not limited to the present embodiment. For example, it can be set to be electrically connected by a connector. As such a connector, a ZIF structure connector, a Non-ZIF structure connector, etc. can be cited. And, the method of electrically connecting the flexible cable 112A and the driving substrate 200 and the method of electrically connecting the flexible cable 112B and the signal processing substrate 300 can be the same or different. For example, it can be set to be such that the flexible cable 112A is electrically connected to the driving substrate 200 by thermocompression bonding and the flexible cable 112B is electrically connected to the signal processing substrate 300 by a connector.

[0096] Similar to the above-described driving substrate 200, the signal processing substrate 300 of the present embodiment is a flexible PCB substrate, which is a so-called flexible substrate. The circuit components (not shown) mounted on the signal processing substrate 300 are mainly components for processing analog signals (hereinafter referred to as "analog components"). As a specific example of the analog component, a charge amplifier, an analog-to-digital converter (ADC), a digital-to-analog converter (DAC), a power supply IC, etc. can be cited. And, the circuit components of the present embodiment also include a coil around the power supply and a large-capacity capacitor for smoothing, which are relatively large in component size. In addition, the signal processing substrate 300 does not necessarily have to be a flexible substrate, and can be a non-flexible rigid substrate or a rigid-flexible substrate.

[0097] In the present embodiment, the signal processing unit 104 is implemented by the signal processing substrate 300 and the signal processing IC 310 mounted on the flexible cable 112B. In addition, the signal processing IC 310 includes circuits different from the analog components mounted on the signal processing substrate 300 among various circuits and components for implementing the signal processing unit 104.

[0098] In addition, in Figure 2 the manner in which a plurality of (two each) driving substrates 200 and signal processing substrates 300 are respectively provided has been described, but the number of the driving substrates 200 and the signal processing substrates 300 is not limited to Figure 2 the number shown. For example, it can be a manner in which at least one of the driving substrate 200 and the signal processing substrate 300 is used as one substrate.

[0099] On the other hand, as Figure 3As shown, in the radiation detector 10 of the present embodiment, the flexible cable 112 is thermocompression bonded to the terminal 113, whereby the flexible cable 112 is electrically connected to the terminal 113. In addition, Figure 3 FIG. Figure 3 is an example of a structure related to the electrical connection between the flexible cable 112B and the radiation detector 10. However, the structure related to the electrical connection between the flexible cable 112A of the present embodiment and the radiation detector 10 is also the same as that exemplified in Figure 3 the manner shown.

[0100] And, as Figure 3 shown, on the second surface 11B of the base material 11 in the sensor substrate 12 of the radiation detector 10 of the present embodiment, an antistatic layer 48 and an electromagnetic shielding layer 44 are sequentially provided from the side closer to the second surface 11B.

[0101] The antistatic layer 48 has a function of preventing the sensor substrate 12 from being charged and has a function of suppressing the influence of static electricity. As the antistatic layer 48, an antistatic coating "COLCOAT" (trade name: manufactured by COLCOAT Co., Ltd.), PET, PP (PolyPropylene), etc. can be used.

[0102] The electromagnetic shielding layer 44 has a function of suppressing the influence of electromagnetic wave noise from the outside. As the material of the electromagnetic shielding layer 44, for example, a laminated film of a resin film such as ALPET (registered trademark) and a metal film can be used.

[0103] And, as Figure 2 and Figure 3 shown, a reinforcing substrate 40 including a porous layer 50 is provided on the conversion layer 14 (specifically, on the protective layer 66) through an adhesive 42.

[0104] The reinforcing substrate 40 has a function of strengthening the rigidity of the base material 11. The bending rigidity of the reinforcing substrate 40 of the present embodiment is higher than that of the base material 11, and the dimensional change (deformation) with respect to the force applied in the vertical direction to the surface facing the conversion layer 14 is smaller than the dimensional change with respect to the force applied in the vertical direction to the second surface 11B of the base material 11. In addition, specifically, the bending rigidity of the reinforcing substrate 40 is preferably 100 times or more that of the base material 11. And the thickness of the reinforcing substrate 40 of the present embodiment is thicker than the thickness of the base material 11. For example, when XENOMAX (registered trademark) is used as the base material 11, the thickness of the reinforcing substrate 40 is preferably about 0.1 mm to 0.25 mm.

[0105] Specifically, the reinforcing substrate 40 of the present embodiment preferably uses a raw material having a flexural modulus of elasticity of 150 MPa or more and 2500 MPa or less. From the viewpoint of suppressing the flexure of the base material 11, it is preferable that the flexural rigidity of the reinforcing substrate 40 is higher than that of the base material 11. In addition, if the flexural modulus of elasticity decreases, the flexural rigidity also decreases. In order to obtain the desired flexural rigidity, it is necessary to increase the thickness of the reinforcing substrate 40, resulting in an increase in the overall thickness of the radiation detector 10. Considering the material of the reinforcing substrate 40 as described above, when attempting to obtain a flexural rigidity exceeding 140000 Pacm 4 there is a tendency for the thickness of the reinforcing substrate 40 to become relatively thick. Therefore, if an appropriate rigidity can be obtained and the overall thickness of the radiation detector 10 is considered, the flexural modulus of elasticity of the raw material for the reinforcing substrate 40 is more preferably 150 MPa or more and 2500 MPa or less. Moreover, the flexural rigidity of the reinforcing substrate 40 is preferably 540 Pacm 4 or more and 140000 Pacm 4 or less.

[0106] Furthermore, the coefficient of thermal expansion of the reinforcing substrate 40 of the present embodiment preferably approximates the coefficient of thermal expansion of the material of the conversion layer 14. More preferably, the ratio of the coefficient of thermal expansion of the reinforcing substrate 40 to the coefficient of thermal expansion of the conversion layer 14 (coefficient of thermal expansion of the reinforcing substrate 40 / coefficient of thermal expansion of the conversion layer 14) is preferably 0.5 or more and 2 or less. The coefficient of thermal expansion of such a reinforcing substrate 40 is preferably 30 ppm / K or more and 80 ppm / K or less. For example, when the conversion layer 14 is made of CsI:Tl, the coefficient of thermal expansion of the conversion layer 14 is 50 ppm / K. At this time, as materials relatively close to the conversion layer 14, PVC (Polyvinyl Chloride) having a coefficient of thermal expansion of 60 ppm / K to 80 ppm / K, PET having a coefficient of thermal expansion of 65 ppm / K to 70 ppm / K, PC (Polycarbonate) having a coefficient of thermal expansion of 65 ppm / K, etc. can be cited.

[0107] From the viewpoint of elasticity, the reinforcing substrate 40 more preferably includes a material having a yield point. In addition, in the present embodiment, the "yield point" refers to the phenomenon in which the stress temporarily drops sharply when the material is stretched, refers to the point at which the strain increases without an increase in stress on the curve representing the relationship between stress and deformation, and refers to the peak in the stress-strain curve during a tensile strength test of the material. As resins having a yield point, generally, hard and highly viscous resins and soft and highly viscous resins having medium strength can be cited. As hard and highly viscous resins, for example, PC etc. can be cited. And, as soft and highly viscous resins having medium strength, for example, PP etc. can be cited.

[0108] Further, as described above, the reinforcing substrate 40 of the present embodiment includes a porous layer 50. Figure 4A FIG. is a plan view showing an example of the porous layer 50 of the present embodiment as viewed from the upper surface side of the radiation detector 10. And Figure 4B is Figure 4A an example of a cross-sectional view taken along line B-B of the porous layer 50 in

[0109] As Figure 4A and Figure 4B shown, the porous layer 50 has a plurality of through holes 51. Figure 4A and Figure 4B shown, the porous layer 50 has a so-called punched structure in which a plurality of through holes 51 having a circular opening and penetrating from the upper surface 50A to the lower surface 50B are arranged in parallel. Thus, by having a plurality of through holes 51, the reinforcing substrate 40 is made lightweight.

[0110] In addition, the opening diameter D, pitch P, and opening ratio of the through holes 51 of the porous layer 50 affect the bending rigidity of the reinforcing substrate 40. For example, there is a tendency that the larger the opening ratio of the through holes 51, the lower the bending rigidity of the reinforcing substrate 40. In addition, the opening ratio is the ratio of the total area of the opening portions of the through holes 51, and if the pitch P becomes smaller relative to the opening diameter D, the opening ratio becomes higher. For example, in the case of the porous layer 50 shown in Figure 4A the opening ratio is calculated by the following formula (1).

[0111] Opening ratio (%) = (78.5 × D 2 ) / P 2 ......(1)

[0112] Therefore, in order to make the reinforcing substrate 40 lightweight and obtain the above-described desired bending rigidity, it is preferable that the pitch P of the through holes 51 is 1 mm or more and 50 mm or less, the opening diameter D is 0.5 mm or more and 50 mm or less, and the opening ratio is 10% or more and 50% or less.

[0113] In addition, the shape of the through holes 51 (for example, the shape of the opening portions of the through holes 51) and the arrangement thereof are not limited to the Figure 4A and Figure 4B shown manner. For example, as Figure 5A shown, the through holes 51 may be arranged in a staggered manner. In the example shown in Figure 5A it shows a manner in which the through holes 51 are arranged with a deviation of half a pitch in each column. And, for example, as Figure 5B shown, the shape of the opening portion of the through holes 51 may be hexagonal.

[0114] Further, the porous layer 50 only needs to have a plurality of through-holes 51, and is not limited to a porous layer having a punched structure. Further, the through-holes 51 only need to penetrate at least a part of the porous layer 50, and are not limited to through-holes that penetrate the upper surface 50A and the lower surface 50B, for example.

[0115] As another example of the porous layer 50, in Figure 6A and Figure 6B an example of a porous layer 50 having a honeycomb structure is shown. Figure 6A is a plan view of an example of a porous layer 50 having a honeycomb structure as viewed from the upper surface side of the radiation detector 10. Further, Figure 6B is as viewed from the side surface side of the radiation detector 10 Figure 6A an example of a side view of the porous layer 50 shown.

[0116] Figure 6A and Figure 6B The porous layer 50 shown has a plurality of hexagonal through-holes 51 forming a honeycomb structure. Further, even in the porous layer 50 having a honeycomb structure, since the opening diameter D and the pitch P of the through-holes 51 affect the bending rigidity of the reinforcing substrate 40, the values of the opening diameter D and the pitch P of the through-holes 51 are preferably within the above ranges.

[0117] Further, in the case where it is a porous layer 50 having a honeycomb structure, as Figure 6C shown in an example, it can be a sandwich structure in which a porous plate 501 having a honeycomb structure is sandwiched between a protective plate 502 and a protective plate 503 that do not have through-holes 51. Further, the porous layer 50 can be a laminate of either the protective plate 502 or the protective plate 503 and the porous plate 501. In this way, by having at least one of the protective plate 502 and the protective plate 503, the surface area of the bonding surface becomes larger, and thus, for example, it is easy to bond the porous layer 50 to the upper surface of the conversion layer 14, and the porous layer 50 is firmly fixed to the conversion layer 14.

[0118] Further, in Figure 7A an example of a side view of an example of a porous layer 50 having a groove structure as viewed from the side surface side of the radiation detector 10 is shown. Figure 7A The porous layer 50 shown can be a groove structure in which a corrugated core 504 is sandwiched between a protective plate 505 and a protective plate 506 corresponding to a gasket. Further, in the case where it is a porous layer 50 having a groove structure, it is not limited to Figure 7A the manner shown, and only needs to have at least one of the protective plate 505 and the protective plate 506.

[0119] In Figure 7AIn the porous layer 50 shown, the extending direction of the groove formed by the core 504 is the in-plane direction of the reinforcing substrate 40. Thus, in the case of the porous layer 50 having a groove structure, a plurality of through holes 51 penetrating from one side surface of the porous layer 50 to the opposite side surface are formed by the core 504.

[0120] In the case of the porous layer 50 having a groove structure, the pitch P and the thickness T affect the bending rigidity of the reinforcing substrate 40. For example, there is a tendency that the larger the pitch is compared with the thickness T, the lower the bending rigidity is. Therefore, in order to make the reinforcing substrate 40 lightweight and obtain the above-described desired bending rigidity, it is preferable that the pitch P of the groove structure is not less than the thickness T and not more than three times the thickness T. And, as the thickness T, it is preferably 2 mm or less.

[0121] And, in Figure 8 FIG. shows a side view example of observing the porous layer 50 having a porous structure from the side surface side of the radiation detector 10. In the case of the porous layer 50 having a porous structure, the porosity based on the specification of JIS H 7009 (particularly the porosity of the through holes 51 as through pores) and the pore diameter affect the bending rigidity of the reinforcing substrate 40. For example, there is a tendency that the larger the porosity is, the lower the bending rigidity is. In addition, the porosity means the ratio of the pore volume to the total volume, the total volume being the volume of the porous structure including all pores and not limited to through pores, and the through pore rate means the ratio of the volume of the through pores to the total volume. And, the pore diameter is the diameter of the pores, and in the case of anisotropic pores, it is the diameter of the pores in the cross section perpendicular to the major axis direction. Therefore, in order to make the reinforcing substrate 40 lightweight and obtain the above-described desired bending rigidity, it is preferable that the porosity of the porous structure is not less than 15% and not more than 50%, and the pore diameter is not less than 0.3 μm and not more than 5 mm.

[0122] Examples of the resin as the material of the porous layer 50 as described above include at least one of CFRP (Carbon Fiber Reinforced Plastics), CFRTP (Carbon Fiber Reinforced ThermoPlastics), PVC, PET, PP, and PE. And, examples of the metal as the material of the porous layer 50 include at least one of aluminum and magnesium. In addition, among these, the porous layer 50 is more preferably CFRP. In particular, Figure 6C the protective plates 502 and 503 in the honeycomb structure porous layer 50 shown, Figure 7A each of the protective plates 505 and 506 in the groove structure shown can further improve the bending rigidity by combining two layers of CFRP having different extending directions of carbon fibers, and thus is preferable.

[0123] In addition, the reinforcing substrate 40 may include a laminate formed by laminating a plurality of porous layers 50. For example, the reinforcing substrate 40 may include a laminate formed by laminating a resin porous layer 50 and a metal porous layer 50. In this case, the reinforcing substrate 40 can suppress charging caused by the resin porous layer 50 through the metal porous layer 50. And, for example, the reinforcing substrate 40 may include a laminate formed by laminating a plurality of porous layers 50 with different positions of through-holes 51. In this case, the reinforcing substrate 40 can improve thermal conductivity by staggering the positions of the through-holes 51 (more specifically, the positions of the openings) in each porous layer 50.

[0124] And, for example, the reinforcing substrate 40 may include a laminate formed by laminating two porous layers 50 with different pitches P and thicknesses T of the groove structure. In Figure 7B FIG. shows a side view of an example of the porous layer 50 having the groove structure at this time as viewed from the side of the radiation detector 10. Figure 7B The shown reinforcing substrate 40 includes a laminate formed by laminating a porous layer 507 having a groove structure with a pitch of P1 and a thickness of T1 and a porous layer 508 having a groove structure with a pitch of P2 and a thickness of T2. The reinforcing substrate 40 at this time can further improve the bending rigidity.

[0125] In addition, the radiation image photographing apparatus 1 will be described in detail. Figure 9A FIG. is an example of a cross-sectional view of the radiation image photographing apparatus 1 when the radiation detector 10 of the present embodiment is applied to the ISS (Irradiation Side Sampling) method of irradiating radiation from the second surface 11B side of the base material 11. And, Figure 9B FIG. is an example of a cross-sectional view of the radiation image photographing apparatus 1 when the radiation detector 10 of the present embodiment is applied to the PSS (Penetration Side Sampling) method of irradiating radiation from the conversion layer 14 side.

[0126] As Figure 9A and Figure 9B shown, the radiation image photographing apparatus 1 using the above radiation detector 10 is used in a state of being housed in the housing 120. As Figure 9A and Figure 9B shown, in the housing 120, a radiation detector 10, a power supply unit 108, a signal processing substrate 300, and other circuit units are arranged in the incident direction of the radiation. Figure 9AThe radiation detector 10 is arranged in a state where the second surface 11B side of the base material 11 faces the top plate on the irradiation surface 120A side of the frame 120 irradiated with the radiation that has passed through the subject. More specifically, it is arranged in a state where the reinforcing substrate 40 faces the top plate on the irradiation surface 120A side of the frame 120. And, Figure 9B The radiation detector 10 is arranged in a state where the first surface 11A side of the base material 11 faces the top plate on the irradiation surface 120A side of the frame 120. More specifically, it is arranged in a state where the upper surface of the conversion layer 14 faces the top plate on the irradiation surface 120A side of the frame 120.

[0127] And, as Figure 9A and Figure 9B shown, inside the frame 120, a middle plate 116 is also provided on the side where the radiation transmitted through the radiation detector 10 exits. As the middle plate 116, for example, a thin sheet made of aluminum or copper can be cited. Since the copper thin sheet is less likely to generate secondary radiation due to the incident radiation, it has the function of preventing scattering backward (i.e., toward the conversion layer 14 side). In addition, the middle plate 116 preferably covers at least the entire surface on the side where the radiation of the conversion layer 14 exits, and covers the entire conversion layer 14. And, a circuit part such as a signal processing substrate 300 is fixed on the middle plate 116.

[0128] The frame 120 is preferably made of a material that is lightweight, has a low absorption rate of radiation (especially X-rays), and has high rigidity, and more preferably made of a material with a sufficiently high elastic modulus. As the material of the frame 120, a material with a flexural modulus of 10000 MPa or more is preferably used. As the material of the frame 120, carbon or CFRP with a flexural modulus of about 20000 MPa to 60000 MPa can be appropriately used.

[0129] During the radiation image photography of the radiation image photography apparatus 1, a load from the subject is applied to the irradiation surface 120A of the frame 120. If the rigidity of the frame 120 is insufficient, the sensor substrate 12 may flex due to the load from the subject, resulting in failures such as damage to the pixels 30. By accommodating the radiation detector 10 inside the frame 120 made of a material with a flexural modulus of 10000 MPa or more, the flexure of the sensor substrate 12 caused by the load from the subject can be suppressed.

[0130] In addition, in the frame 120, the irradiation surface 120A of the frame 120 and other parts can be formed of different materials. For example, it can be formed as follows: the part corresponding to the irradiation surface 120A is formed of a material with a low absorption rate of radiation, high rigidity, and a sufficiently high elastic modulus as described above, and other parts are formed of a material different from the part corresponding to the irradiation surface 120A (for example, a material with an elastic modulus lower than that of the part of the irradiation surface 120A).

[0131] In addition, the porous layer 50 of the present embodiment has a plurality of through-holes 51. Therefore, since the transmission amount of radiation in the part of the through-holes 51 and the part other than the through-holes 51 is different, the amount of radiation reaching the conversion layer 14 may be different. At this time, image non-uniformity may occur in the radiation image obtained by the radiation detector 10. Therefore, the radiation detector 10 of the present embodiment is preferably applied to the radiation image photographing apparatus 1 of the ISS method.

[0132] Reference Figures 10A to 10F A method for manufacturing the radiation image photographing apparatus 1 of the present embodiment will be described. In addition, the method for manufacturing the radiation image photographing apparatus 1 of the present embodiment includes the method for manufacturing the radiation detector 10 of the present embodiment.

[0133] As Figure 10A shown, in order to form the sensor substrate 12, the base material 11 is provided on a support 400 such as a glass substrate having a thickness thicker than that of the base material 11 with a release layer 402 interposed therebetween. For example, in the case of forming the base material 11 by a lamination method, a sheet that will become the base material 11 is bonded to the support 400. The second surface 11B of the base material 11 is in contact with the release layer 402. In addition, the method for forming the base material 11 is not limited to the present embodiment. For example, it may be a method of forming the base material 11 by a coating method.

[0134] In addition, pixels 30 and terminals 113 are formed on the first surface 11A of the base material 11. The pixels 30 are formed on the pixel regions 35 of the first surface 11A with a bottom coating (not shown) formed using SiN or the like interposed therebetween. And a plurality of terminals 113 are formed along two sides of the base material 11, respectively.

[0135] And, as Figure 10B shown, a conversion layer 14 is formed on the layer on which the pixels 30 are formed (hereinafter, simply referred to as "pixels 30"). In the present embodiment, the conversion layer 14 of CsI as columnar crystals is directly formed on the sensor substrate 12 by a vapor deposition method such as a vacuum evaporation method, a sputtering method, and a CVD (Chemical Vapor Deposition) method. At this time, the side of the conversion layer 14 in contact with the pixels 30 becomes the growth direction base point side of the columnar crystals.

[0136] In addition, when using a CsI scintillator as the conversion layer 14, the conversion layer 14 can also be formed on the sensor substrate 12 by a method different from that of the present embodiment. For example, a material obtained by vapor-depositing CsI on a substrate such as aluminum or carbon by chemical vapor deposition can be prepared, and the side not in contact with the CsI substrate is bonded to the pixel 30 of the sensor substrate 12 through an adhesive sheet or the like, thereby forming the conversion layer 14 on the sensor substrate 12. At this time, it is preferable to bond the material in a state where the entire conversion layer 14 including the substrate such as aluminum is covered with a protective layer to the pixel 30 of the sensor substrate 12. In addition, in this case, the side of the conversion layer 14 in contact with the pixel 30 becomes the front end side of the growth direction of the columnar crystal.

[0137] Moreover, different from the radiation detector 10 of the present embodiment, GOS (Gd2O2S:Tb) or the like can also be used as the conversion layer 14 instead of CsI. At this time, for example, a sheet obtained by dispersing GOS in an adhesive such as resin is prepared and bonded to a support formed of white PET or the like through an adhesive layer or the like, and the side of GOS not bonded to the support is bonded to the pixel 30 of the sensor substrate 12 through an adhesive sheet or the like, thereby forming the conversion layer 14 on the sensor substrate 12. In addition, compared with the case of using GOS, when CsI is used for the conversion layer 14, the conversion efficiency from radiation to visible light becomes higher.

[0138] In addition, on the conversion layer 14 formed on the sensor substrate 12, a reflective layer 62 is provided with a bonding layer 60 interposed therebetween. In addition, a protective layer 66 is provided with an adhesive layer 64 interposed therebetween.

[0139] Next, as Figure 10C shown, the flexible cable 112 is electrically connected to the sensor substrate 12. Specifically, the flexible cable 112 carrying the driving IC 210 or the signal processing IC 310 is thermocompression bonded to the terminal 113 to electrically connect the terminal 113 and the flexible cable 112. Thereby, the flexible cable 112 is electrically connected to the sensor substrate 12.

[0140] Next, as Figure 10D shown, a reinforcing substrate 40 is provided on the conversion layer 14. Specifically, the reinforcing substrate 40 provided with an adhesive 42 is bonded to the conversion layer 14 covered with the protective layer 66.

[0141] After that, as Figure 10E shown, the sensor substrate 12 provided with the conversion layer 14 is peeled off from the support 400. Hereinafter, this process is referred to as a peeling process. In the case of mechanical peeling, Figure 10EIn one example shown, the side of the base material 11 of the sensor substrate 12 that faces the side to which the flexible cable 112B is electrically connected is taken as the starting point of peeling. Then, starting from the side that is the starting point, and moving towards the side to which the flexible cable 112 is electrically connected, the sensor substrate 12 is gradually peeled from the support 400 along Figure 10E the arrow D direction shown, so as to peel the sensor substrate 12 from the support 400.

[0142] In addition, as the side that is the starting point of peeling, it is preferably the side that intersects the longest side when looking down at the sensor substrate 12. In other words, the side along the flexure direction Y that flexes due to peeling is preferably the longest side. As an example, in the present embodiment, the side that faces the side to which the flexible cable 112B is electrically connected is taken as the starting point of peeling.

[0143] Next, as Figure 10F shown, an antistatic layer 48, an electromagnetic shielding layer 44, and a reinforcement substrate 40 are sequentially provided on the second surface 11B of the base material 11. Specifically, the antistatic layer 48 and the electromagnetic shielding layer 44 are formed on the second surface 11B of the base material 11 by coating or the like.

[0144] In addition, the radiation image imaging apparatus 1 is manufactured by housing the radiation detector 10, the circuit unit, etc. in the housing 120. Figure 9A or Figure 9B shown. Specifically, the radiation image imaging apparatus 1 is manufactured by housing the radiation detector 10 in the housing 120 in a state where the radiation detector 10 faces the irradiation surface 120A on the second surface 11B side (specifically, the electromagnetic shielding layer 44) of the base material 11. Figure 9A shown. And the radiation image imaging apparatus 1 is manufactured by housing the radiation detector 10 in the housing 120 in a state where the reinforcement substrate 40 faces the irradiation surface 120A. Figure 9B shown.

[0145] In addition, the above process is an example. For example, after the peeling process described with reference to Figure 10E , the process of connecting the flexible cable 112 described with reference to Figure 10C to the sensor substrate 12 can be performed. That is, after peeling the sensor substrate 12 in a state where the flexible cable 112 is not connected to the terminal 113 from the support 400, the flexible cable 112 can be electrically connected to the terminal 113. And, for example, after the peeling process described with reference to Figure 10E , the process of providing the reference described with reference to Figure 10DProcess of strengthening substrate 40. That is, after the sensor substrate 12 in the state without the strengthening substrate 40 is peeled off from the support 400, the strengthening substrate 40 can be provided on the conversion layer 14. In addition, as in the above process, by providing the strengthening substrate 40 on the sensor substrate 12 before the peeling process, the sensor substrate 12 in the state where the rigidity is strengthened by the strengthening substrate 40 is peeled off from the support 400 in the peeling process. Therefore, for example, peeling of the conversion layer 14 from the substrate 11 caused by bending of the substrate 11 in the peeling process can be suppressed.

[0146] In addition, in the above, the case where the size (area) of the strengthening substrate 40 is the same as that of the substrate 11 of the sensor substrate 12 has been described, but the size (area) of the strengthening substrate 40 is not limited to the above case. For example, as Figure 11A shown, it can be set such that the strengthening substrate 40 is larger than the substrate 11. In addition, the specific size of the strengthening substrate 40 can be determined according to the size inside the housing 120 that houses the radiation detector 10, etc. In the Figure 11A radiation detector 10 shown, the end portion of the strengthening substrate 40 is located at a position more outward than the end portion of the substrate 11 (i.e., the sensor substrate 12).

[0147] By making the size of the strengthening substrate 40 larger than that of the substrate 11 in this way, for example, when the radiation imaging apparatus 1 etc. is dropped and an impact is applied to the housing 120 and the side surface (the surface intersecting the irradiation surface 120A) of the housing 120 is dented, the strengthening substrate 40 will interfere with the side surface of the housing 120. On the other hand, since the sensor substrate 12 is smaller than the strengthening substrate 40, it is less likely to interfere with the side surface of the housing 120. Therefore, according to the Figure 11A radiation detector 10 shown, the influence of the impact applied to the radiation imaging apparatus 1 on the sensor substrate 12 can be suppressed.

[0148] In addition, from the viewpoint of suppressing the influence of the impact applied to the radiation imaging apparatus 1 by the strengthening substrate 40 on the sensor substrate 12, as Figure 11A shown, at least a part of the end portion of the strengthening substrate 40 may protrude more outward than the end portion of the substrate 11. For example, even when the size of the strengthening substrate 40 is smaller than that of the substrate 11, the end portion of the strengthening substrate 40 that protrudes more outward than the end portion of the substrate 11 will interfere with the side surface of the housing 120, so the influence of the impact on the sensor substrate 12 can be suppressed.

[0149] And, for example, as Figure 11B and Figure 11C shown, it can be set such that the strengthening substrate 40 is smaller than the substrate 11. In the Figure 11BIn the example shown, the reinforcing substrate 40 is not provided at a position opposite to the terminal 113. That is, the area of the reinforcing substrate 40 in the radiation detector 10 is smaller than the value obtained by subtracting the area of the region where the terminal 113 is provided from the area of the base material 11. On the other hand, in Figure 11C the example shown, the end portion of the reinforcing substrate 40 is located at the peripheral portion 14B of the conversion layer 14, and the reinforcing substrate 40 is provided in a region narrower than the region where the conversion layer 14 covers the entire first surface 11A of the base material 11.

[0150] When the flexible cable 112 or component electrically connected to the base material 11 (sensor substrate 12) is disassembled and reconnected due to a failure or positional deviation, etc., it is called rework. Thus, by making the reinforcing substrate 40 smaller than the base material 11, rework can be performed without being hindered by the end portion of the reinforcing substrate 40, and therefore rework of the flexible cable 112 can be easily performed.

[0151] In addition, the structures and manufacturing methods of the radiation imaging apparatus 1 and the radiation detector 10 are not limited to the above-described manner. For example, they can be set to the manners shown in the following modification examples 1 to 4. In addition, they can be set to the manner of appropriately combining each of the above-described manner and modification examples 1 to 4, and are not limited to modification examples 1 to 4.

[0152] (Modification example 1)

[0153] In this modification example, a manner in which the reinforcing substrate 40 in the radiation detector 10 is supported by the support member 72 will be described with reference to Figure 12A and Figure 12B . Examples of cross-sectional views of the radiation detector 10 of this modification example corresponding to the A-A line cross-sectional view of the radiation detector 10 shown in the above Figure 12A and Figure 12B are respectively shown in Figure 3 .

[0154] In Figure 12A the radiation detector 10 shown, the end portion of the reinforcing substrate 40 is supported by the support member 72. That is, one end of the support member 72 is connected to the flexible cable 112 or the first surface 11A of the base material 11, and the other end of the support member 72 is connected to the end portion of the reinforcing substrate 40 by the adhesive 42. In addition, the support member 72 can be provided on the entire outer edge portion of the base material 11 or a part of the outer edge portion. Thus, by supporting the end portion of the reinforcing substrate 40 that forms a space and extends between the base material 11 with the support member 72, peeling of the conversion layer 14 from the sensor substrate 12 can be suppressed. And by providing the support member 72 on the flexible cable 112 connected to the terminal 113, peeling of the flexible cable 112 from the terminal 113 can be suppressed.

[0155] On the other hand, inFigure 12B In the radiation detector 10 shown, a position closer to the inside than the end of the reinforcement substrate 40 is supported by the support member 72. In Figure 12B the example shown, the position where the support member 72 is provided is only outside the area where the flexible cable 112 and the terminal 113 are provided. In Figure 12B the example shown, one end of the support member 72 is connected to the first surface 11A of the base material 11, and the other end of the support member 72 is connected to the end of the reinforcement substrate 40 via the adhesive 42. Thus, by not providing the support member 72 on the flexible cable 112 and the terminal 113, rework of the flexible cable 112 can be easily performed.

[0156] Thus, in the radiation detector 10 according to this modification example, by supporting the reinforcement substrate 40 with the support member 72, a strengthening effect based on the rigidity of the reinforcement substrate 40 can be obtained up to the vicinity of the end of the base material 11, and the effect of suppressing the bending of the base material 11 can be achieved. Therefore, in the radiation detector 10 according to this modification example, peeling of the conversion layer 14 from the sensor substrate 12 can be suppressed.

[0157] (Modification Example 2)

[0158] In this modification example, a method of sealing the periphery of the conversion layer 14 in the radiation detector 10 will be described with reference to Figure 13 FIG. An example of a cross-sectional view of the radiation detector 10 of this modification example corresponding to the A-A line cross-sectional view of the radiation detector 10 shown above in Figure 13 is shown in Figure 3 FIG.

[0159] As Figure 13 shown, it can be set to a method of sealing the peripheral portion 14B of the conversion layer 14 with the sealing member 70. In Figure 13 the example shown, as described above, the sealing member 70 is provided in the space formed by the base material 11, the conversion layer 14, and the reinforcement substrate 40. Specifically, in the region corresponding to the peripheral portion 14B of the conversion layer 14 and the region more outside thereof, the sealing member 70 is provided in the space formed between the conversion layer 14 (protective layer 66) and the reinforcement substrate 40. The material of the sealing member 70 is not particularly limited, and for example, a resin can be used.

[0160] The method of setting the sealing member 70 is not particularly limited. For example, after the reinforcing substrate 40 is provided on the conversion layer 14 covered by the adhesive layer 60, the reflective layer 62, the adhesive layer 64, and the protective layer 66 by the adhesive 42, a fluid sealing member 70 is injected into the space formed between the conversion layer 14 (protective layer 66) and the reinforcing substrate 40, and the reinforcing substrate 40 is cured. And, for example, after the conversion layer 14, the adhesive layer 60, the reflective layer 62, the adhesive layer 64, and the protective layer 66 are sequentially formed on the base material 11, the sealing member 70 is formed, and in a state where the conversion layer 14 and the sealing member 70 covered by the adhesive layer 60, the reflective layer 62, the adhesive layer 64, and the protective layer 66 are covered, the reinforcing substrate 40 is provided by the adhesive 42.

[0161] And, the area where the sealing member 70 is provided is not limited to Figure 13 the manner shown. For example, the sealing member 70 can be provided on the entire first surface 11A of the base material 11, and the terminal 113 to which the flexible cable 112 is electrically connected and the flexible cable 112 can be sealed together.

[0162] In this way, the sealing member 70 is filled in the space formed between the conversion layer 14 and the reinforcing substrate 40 and the conversion layer 14 is sealed, thereby suppressing the peeling of the reinforcing substrate 40 from the conversion layer 14. In addition, the conversion layer 14 is structured to be fixed to the sensor substrate 12 by both the reinforcing substrate 40 and the sealing member 70, so the rigidity of the base material 11 can be further enhanced.

[0163] In addition, when this modification example and the above-described modification example 1 are combined, in other words, when the radiation detector 10 includes the sealing member 70 and the support member 72, it can be set in the following manner: The sealing member 70 is filled in a part or the whole of the space surrounded by the support member 72, the reinforcing substrate 40, the conversion layer 14, and the base material 11 and sealed by the sealing member 70.

[0164] (Modification Example 3)

[0165] In the above manner, a manner in which the density of the plurality of through holes 51 in the porous layer 50 is uniform has been described, but it can also be a manner in which the density of the plurality of through holes 51 in the porous layer 50 is non-uniform. More specifically, the density of the through holes 51 in each of the plurality of regions where the porous layer 50 is arranged along the first surface 11A of the base material 11 can be different.

[0166] In the porous layer 50, the thermal conductivity of the porous layer 50 is relatively high compared to the atmosphere. Therefore, the smaller the density of the through-holes 51, the higher the thermal conductivity of the porous layer 50. For example, there is a tendency for the heat generation amount of a circuit portion such as the signal processing substrate 300 to be more than that of other components. Therefore, in the vicinity of a heat-generating component or at a position where the heat becomes high within the housing 120, etc., the density of the through-holes 51 in the porous layer 50 can be made smaller than that of other portions to increase the thermal conductivity.

[0167] An example of the porous layer 50 at this time is shown in Figure 14A . In Figure 14A In the shown porous layer 50, the density of the through-holes 51 in the region 52 corresponding to the position where the circuit portion is provided is smaller than the density of the through-holes 51 in other regions 53.

[0168] In Figure 14A In the shown radiation detector 10, the density of the through-holes 51 in the region 52 of the porous layer 50 is smaller than the density of the through-holes 51 in other regions 53. Therefore, the heat dissipation property in the region 52 can be improved. Therefore, it is possible to suppress the heat in the housing 120 from becoming uneven. For example, when heat is unevenly transferred in the plane direction of the sensor substrate 12, the dark current generated in the sensor portion 34 of the pixel 30 sometimes changes according to the transferred heat, resulting in image unevenness on the radiation image. In contrast, in Figure 14A In the shown radiation detector 10, the thermal conductivity of the region 52 corresponding to the position with a large heat generation amount can be increased. Therefore, it is possible to suppress the uneven transfer of heat in the plane direction of the sensor substrate 12, and thus it is possible to suppress the image unevenness of the radiation image.

[0169] On the other hand, the larger the density of the through-holes 51 in the porous layer 50, the more lightweight it can be made. Depending on the arrangement of the components within the housing 120, it is sometimes difficult to balance the weight of the entire housing 120. For example, there is a tendency for the power supply unit 108 to be heavier than other components. Therefore, in the vicinity of a heavy component, etc., the density of the through-holes 51 in the porous layer 50 can be made smaller than that of other portions to reduce the weight of this portion.

[0170] An example of the porous layer 50 at this time is shown in Figure 14B . In Figure 14B In the shown porous layer 50, the density of the through-holes 51 in the region 54 corresponding to the position where the power supply unit 108 is provided is larger than the density of the through-holes 51 in other regions 55.

[0171] In Figure 14B In the shown radiation detector 10, the density of the through-holes 51 in the region 54 of the porous layer 50 is larger than the density of the through-holes 51 in other regions 55. Therefore, compared with other regions 55, the region 54 can be made lightweight. Therefore, inFigure 14B In the radiation detector 10 shown, the balance of the overall weight of the housing 120 can be adjusted, thereby improving the usability of the radiation image photographing apparatus 1.

[0172] (Modification Example 4)

[0173] In this modification example, refer to Figures 15A to 15C A modification example of the radiation image photographing apparatus 1 will be described. Figures 15A to 15C These are examples of cross-sectional views of the radiation image photographing apparatus 1 of this modification example.

[0174] In Figure 15A an example of the ISS type radiation image photographing apparatus 1 in which the radiation detector 10 is in contact with the inner wall surface of the top plate on the irradiation surface 120A side of the housing 120 is shown. In Figure 15A the example shown, the electromagnetic shielding layer 44 is in contact with the inner wall surface of the top plate on the irradiation surface 120A side of the housing 120. At this time, the radiation detector 10 and the inner wall surface of the housing 120 may be bonded via an adhesive layer, or may be in contact without passing through an adhesive layer. Thus, by the contact between the radiation detector 10 and the inner wall surface of the housing 120, the rigidity of the radiation detector 10 is further ensured.

[0175] And, in Figure 15B an example of the ISS type radiation image photographing apparatus 1 in which circuit parts such as the radiation detector 10, the control substrate 110, and the power supply unit 108 are juxtaposed in the horizontal direction in the figure is shown. In other words, in Figure 15B the radiation image photographing apparatus 1 shown, the radiation detector 10 and the circuit parts are arranged in parallel in a direction intersecting the radiation irradiation direction.

[0176] In addition, in Figure 15B a method of disposing both the power supply unit 108 and the control substrate 110 on one side of the radiation detector 10 (specifically, on one side of one side of the rectangular pixel region 35) is shown, but the positions of disposing circuit parts such as the power supply unit 108 and the control substrate 110 are not limited to Figure 15B the method shown. For example, the power supply unit 108, the control substrate 110, and other circuit parts may be dispersedly disposed on each of the two opposite sides of the pixel region 35, or may be dispersedly disposed on each of two adjacent sides. Thus, by arranging the radiation detector 10 and the circuit parts in parallel in a direction intersecting the radiation irradiation direction, the thickness of the housing 120 (more specifically, the thickness in the radiation transmission direction) can be reduced, thereby realizing the thinning of the radiation image photographing apparatus 1.

[0177] And, in the case of arranging the radiation detector 10 and the circuit parts in parallel in a direction intersecting the radiation irradiation direction, asFigure 15C In the radiographic imaging apparatus 1 shown, the thickness of the housing 120 can be different between the portion of the housing 120 where circuit components such as the power supply unit 108 and the control substrate 110 are respectively provided and the portion of the housing 120 where the radiation detector 10 is provided.

[0178] As Figure 15B and Figure 15C shown in the example, the thickness of circuit components such as the power supply unit 108 and the control substrate 110 is sometimes thicker than the thickness of the radiation detector 10. In this case, as Figure 15C shown in the example, the thickness of the portion of the housing 120 where the radiation detector 10 is provided can be thinner than the thickness of the portion of the housing 120 where circuit components such as the power supply unit 108 and the control substrate 110 are respectively provided. According to Figure 15C the radiographic imaging apparatus 1 shown, a very thin radiographic imaging apparatus 1 corresponding to the thickness of the radiation detector 10 can be configured.

[0179] In addition, as Figure 15C shown in the example, when the thicknesses of the portion of the housing 120 where circuit components such as the power supply unit 108 and the control substrate 110 are respectively provided and the portion of the housing 120 where the radiation detector 10 is provided are different, if a step difference occurs at the boundary portion between the two portions, it may cause discomfort to the subject in contact with the boundary portion 120B. Therefore, the boundary portion 120B is preferably in a state having an inclination. Also, the portion of the housing 120 that houses circuit components such as the power supply unit 108 and the control substrate 110 and the portion of the housing 120 that houses the radiation detector 10 can be formed of different materials.

[0180] As described above, each of the above radiation detectors 10 includes a sensor substrate 12, a conversion layer 14, and a reinforcement substrate 40. The sensor substrate 12 forms a plurality of pixels 30 that accumulate charges generated according to light converted from radiation in the pixel region 35 of the flexible substrate 11. The conversion layer 14 is provided on one side of the first surface 11A of the substrate 11 where the pixels 30 are provided, and converts radiation into light. The reinforcement substrate 40 is provided on the surface of the conversion layer 14 opposite to the surface on the substrate 11 side, and includes a porous layer 50 having a plurality of through holes 51 to reinforce the rigidity of the substrate 11.

[0181] Therefore, in each of the above radiation detectors 10, the bending rigidity is high and the heat resistance can be improved. In particular, in the radiographic imaging apparatus 1 of the ISS method, the above effects can be obtained while suppressing the influence of the through holes 51 of the porous layer 50 of the reinforcement substrate 40 on the radiographic image.

[0182] In addition, the structures and manufacturing methods of the radiographic imaging apparatus 1 and the radiation detector 10 are not limited to the referenceFigures 1 to 15C The ways of explanation. For example, in the above, the way that the reinforcement substrate 40 only includes the porous layer 50 is explained, but the reinforcement substrate 40 may include components other than the porous layer 50. For example, the reinforcement substrate 40 may include a laminate formed by laminating the porous layer 50 and a rigid plate (formed of CFRP or the like). And, in each of the above radiation detectors 10, the way that the reinforcement substrate 40 is provided on the upper side of the conversion layer 14 is explained, but the reinforcement substrate 40 may also be provided on the second surface 11B side of the base material 11. For example, the reinforcement substrate 40 may be attached to the electromagnetic shielding layer 44. And, a rigid plate formed of CFRP or the like for strengthening the rigidity of the base material 11 may be provided on the second surface 11B of the base material 11.

[0183] And, for example, as described above Figure 1 As shown, the way that the pixels 30 are two-dimensionally arranged in a matrix is explained, but it is not limited thereto. For example, they may be arranged in one dimension or in a honeycomb arrangement. And, the shape of the pixels is not limited either. It may be rectangular or a polygon such as a hexagon. In addition, the shape of the pixel region 35 is not limited, which is natural.

[0184] In addition, the structures, manufacturing methods, etc. of the radiation image photographing apparatus 1, the radiation detector 10, etc. in the above embodiments and each modification example are an example, and it is natural that they can be changed according to the situation without departing from the gist of the present invention.

[0185] The entire contents of the invention of Japanese Patent Application No. 2020-038171 filed on March 5, 2020 are incorporated herein by reference.

[0186] All documents, patent applications, and technical specifications described in this specification are incorporated herein by reference to the same extent as if each of the documents, patent applications, and technical specifications incorporated by reference is specifically and individually described.

[0187] Reference Signs

[0188] 1 - Radiation image photographing apparatus, 10 - Radiation detector, 11 - Substrate, 11A - First surface, 11B - Second surface, 12 - Sensor substrate, 14 - Conversion layer, 14A - Central portion, 14B - Peripheral portion, 30 - Pixel, 32 - TFT (switching element), 34 - Sensor portion, 35 - Pixel region, 36 - Signal wiring, 38 - Scan wiring, 39 - Common wiring, 40, 401, 402 - Reinforcing substrate, 42, 421, 422 - Adhesive, 44 - Electromagnetic shielding layer, 48 - Antistatic layer, 50, 507, 508 - Porous layer, 50A - Upper surface, 50B - Lower surface, 501 - Porous plate, 502, 503, 505, 506 - Protective plate, 504 - Core, 52, 53, 54, 55 - Region, 51 - Through hole, 60 - Adhesive layer, 62 - Reflective layer, 64 - Bonding layer, 66 - Protective layer, 70 - Sealing member, 72 - Support member, 100 - Control unit, 100A - CPU, 100B - Memory, 100C - Storage unit, 102 - Driving unit, 104 - Signal processing unit, 106 - Image memory, 108 - Power supply unit, 110 - Control substrate, 112, 112A, 112B - Flexible cable, 113 - Terminal, 116 - Middle plate, 120 - Housing, 120A - Irradiation surface, 120B - Boundary portion, 200 - Driving substrate, 210 - Driving IC, 300 - Signal processing substrate, 310 - Signal processing IC, 400 - Support, 402 - Release layer, D - Opening diameter, P, P1, P2 - Pitch, T, T1, T2 - Thickness.

Claims

1. A radiation detector, comprising: A substrate having a plurality of pixels formed in a pixel region of a flexible base material and accumulating charges generated from light converted from radiation; A conversion layer disposed on one side of the surface of the base material where the pixels are provided, and converting the radiation into the light; and A reinforcing substrate for reinforcing the rigidity of the base material, disposed on the surface of the conversion layer opposite to the surface on the base material side, and including a porous layer having a plurality of through holes, The porous layer has a porous structure with a porosity of 15% or more and 50% or less, and a pore diameter of 0.3 μm or more and 5 mm or less.

2. The radiation detector according to claim 1, wherein, The opening diameter of each of the plurality of through-holes is 0.5 mm or more and 50 mm or less, the pitch is 1 mm or more and 50 mm or less, and the aperture ratio is 10% or more and 50% or less.

3. The radiation detector according to claim 1, wherein, The porous layer has the plurality of through-holes with hexagonal openings.

4. The radiation detector according to claim 3, wherein, The porous layer has a honeycomb structure.

5. The radiation detector according to claim 1, wherein, The porous layer has a groove structure in which the extending direction of the grooves is in-plane direction of the reinforcing substrate.

6. The radiation detector according to claim 5, wherein, The pitch of the groove structure is equal to or greater than the thickness of the groove structure and equal to or less than three times the thickness.

7. The radiation detector according to claim 1, wherein, The material of the porous layer includes at least one of CFRP (carbon fiber reinforced plastic), CFRTP (carbon fiber reinforced thermoplastic), PVC (polyvinyl chloride), PET (polyethylene terephthalate), PP (polypropylene), PE (polyethylene), aluminum, and magnesium.

8. The radiation detector according to claim 1, wherein, The material of the porous layer includes CFRP (carbon fiber reinforced plastic).

9. The radiation detector according to claim 1, wherein, The density of the through-holes in each of the plurality of regions where the porous layer is arranged along the surface of the substrate on which the pixels are provided is different.

10. The radiation detector according to claim 9, wherein, The density of the through-holes in the region corresponding to the position where the circuit portion is provided, which is used to read the charge accumulated in the pixel, is less than the density of the through-holes in other regions.

11. The radiation detector according to claim 9, wherein, The density of the through-holes in the region corresponding to the power supply portion that supplies power to the circuit portion, which is used to read the charge accumulated in the pixel, is greater than the density of the through-holes in other regions.

12. The radiation detector according to claim 1, wherein, The reinforcing substrate includes a laminate in which a plurality of the porous layers are laminated.

13. The radiation detector according to claim 1, wherein, The porous layer has a protective plate on at least one of the surface on the conversion layer side and the surface on the side opposite to the conversion layer.

14. The radiation detector according to claim 1, further comprising: An antistatic layer provided on one side of the substrate on the surface opposite to the surface where the pixels are provided.

15. The radiation detector according to claim 14, wherein The antistatic layer is a laminated film of a resin film and a metal film.

16. A radiation image photographing apparatus, comprising: The radiation detector according to any one of claims 1 to 15; and A circuit unit configured to read the charges accumulated in the plurality of pixels.

17. A method for manufacturing a radiation detector, comprising: A step of providing a flexible substrate on a support and forming a substrate, wherein A plurality of pixels for accumulating charges generated from light converted from radiation are provided in the pixel region on the first surface of the substrate; A step of providing a conversion layer for converting the radiation into the light on one side of the surface of the substrate on which the pixels are provided; A step of providing a reinforcing substrate for strengthening the rigidity of the substrate on the surface of the conversion layer opposite to the surface on the substrate side, the reinforcing substrate including a porous layer having a plurality of through-holes; and A step of peeling the substrate from the support.

18. The method for manufacturing a radiation detector according to claim 17, wherein The step of peeling the substrate from the support is performed after the reinforcing substrate is provided on the substrate.

Images