A high-voltage starting device and power management system

Abstract

The present invention discloses a high-voltage startup device including a controllable startup resistor, a controller circuit and a capacitor. The controllable startup resistor includes a semiconductor substrate, an N-well formed on the semiconductor substrate, a field oxide layer formed on the N-well, a barrier layer formed on the field oxide layer, a voltage-resistant layer formed on the barrier layer, a polysilicon layer formed on the voltage-resistant layer, a dielectric layer located on the field oxide layer, the voltage-resistant layer and the polysilicon layer and connected to the barrier layer, a high-voltage electrode and a low-voltage electrode formed on the dielectric layer and extending through the dielectric layer to the polysilicon layer, a gate formed on the dielectric layer and located between the high-voltage electrode and the low-voltage electrode, a capacitor connected between the controllable startup resistor and the controller circuit, for powering a controller chip connected to the controller circuit, when the gate access voltage is in a floating state until the controllable startup resistor is turned on, the capacitor starts to charge, and works normally when the charging voltage exceeds the startup voltage. The performance of the startup circuit is improved and the standby loss is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and in particular to a high-voltage starting device and a power management system. Background Art

[0002] In AC / DC switching power supply applications, the controller chip requires a startup circuit to provide the necessary voltage to start up. Traditionally, this circuit involves connecting a large resistor in series from the output of a rectifier bridge to the power supply terminal of the controller chip. The rectifier bridge output charges the controller chip's bypass capacitor through the large resistor. When the capacitor voltage reaches the controller chip's startup voltage, the controller chip starts operating, outputting a switching pulse signal to the switching transistor, which begins switching. The output voltage or current is fed back to the controller chip's port, where the controller adjusts the switching timing to stabilize the output voltage or current. However, even after the traditional controller chip's circuit is started, the external startup circuit resistor still consumes a certain amount of energy, which in turn affects the overall efficiency of the power management system.

[0003] There are two main solutions to this problem. The first is to increase the resistance of the startup resistor, reducing the startup current of the control chip and thus reducing losses in the startup circuit. With method one, increasing the resistance of the startup resistor also increases the charging time of the startup capacitor, thereby prolonging the system startup time. Furthermore, because traditional startup resistors must withstand peak high voltages exceeding 500V, they are generally difficult to integrate into conventional medium- and low-voltage control chips. Even if they can be integrated, the control chip's circuitry must be upgraded to increase its voltage tolerance from below 50V to above 500V, and isolation between the high- and low-voltage areas is required. Since the resistance of conventional integrated circuit thin-film resistors is typically below 3kohm / square, integrating a 100M startup resistor would require more than 30,000 squares. If the resistor strip is designed to be 2µm wide, the strip length would reach a staggering 60,000µm. This significantly increases the area of ​​the resistor on the control chip, further increasing the difficulty and cost of manufacturing the control chip.

[0004] The second method is to add a high-voltage startup circuit by integrating a high-voltage JFET. After startup, the control circuit shuts off the JFET tube, preventing energy loss caused by continuous leakage from the startup resistor during normal operation. The high-voltage JFET device must be integrated into the normal medium and low voltage control chip on a single chip. However, because the manufacturing process used for high-voltage devices is far more complex than that of medium and low voltage devices, more than four additional lithography steps (HVNW, DNW, Ptop, BP, etc.) are required. In addition, the high-voltage JFET must be isolated from the medium and low voltage control devices and its size must be at least 500um*500um. Its single-chip manufacturing cost is approximately twice that of the traditional low-voltage control chip. Although the second method has achieved performance improvements, it also significantly increases costs. Summary of the Invention

[0005] The problem studied in this invention is how to improve the performance of the starting circuit at the lowest cost, reduce the standby loss of the starting circuit, and improve the efficiency of the power management system by high-voltage starting devices and systems to achieve the purpose of energy saving and loss reduction.

[0006] In view of this, the present invention provides a high-voltage starting device and system, which can integrate a high-voltage resistor in the control chip so that the resistor reaches a square resistance of more than 1Mohm / square, and can control the resistor by applying a control gate to the resistor. After the control circuit is started, the resistor is turned off by an electric field, thereby achieving the purpose of reducing standby loss. The following technical solution is specifically adopted to achieve this.

[0007] In a first aspect, the present invention provides a high-voltage starting device, comprising a controllable starting resistor, a controller circuit, and a capacitor;

[0008] The controllable startup resistor includes a semiconductor substrate, an N-well formed on the semiconductor substrate, a field oxide layer formed on the N-well, a barrier layer formed on the field oxide layer, a voltage-resistant layer formed on the barrier layer, a polysilicon layer formed on the voltage-resistant layer, a dielectric layer located on the field oxide layer, the voltage-resistant layer, and the polysilicon layer and connected to the barrier layer, a high-voltage electrode and a low-voltage electrode spaced apart and extending through the dielectric layer to the polysilicon layer, and a gate formed on the dielectric layer and located between the high-voltage electrode and the low-voltage electrode, wherein the high-voltage electrode is used to connect a high-voltage input signal, and the low-voltage electrode is connected to a capacitor at a low-voltage end, the N-well is circular, the voltage-resistant layer is a concentric circle with a radius smaller than that of the N-well, and the polysilicon layer on the voltage-resistant layer is spirally distributed starting from the central circle, the high-voltage electrode of the controllable startup resistor is located at the center of the concentric circle, the low-voltage electrode is located at the edge of the concentric circle, and the distance between the gate and the low-voltage electrode is less than 1% of the distance between the gate and the high-voltage electrode;

[0009] The controller circuit includes a first power tube connected to the controllable startup resistor and a second power tube connected to the first power tube, wherein the first power tube, the second power tube and the controllable startup resistor share the same semiconductor substrate, the first power tube is a low-voltage NMOS, and the second power tube is a low-voltage PMOS;

[0010] The capacitor is connected between the controllable starting resistor and the controller circuit, and is used to supply power to the controller chip connected to the controller circuit;

[0011] When the gate access voltage is in a floating state until the controllable startup resistor is turned on, the capacitor starts to charge, and when the voltage of the charged capacitor exceeds the startup voltage of the controller chip, the controller chip works normally.

[0012] As a further improvement of the above technical solution, the high-voltage starting device further includes:

[0013] A diode, wherein the anode of the diode is connected to the controllable starting resistor, and the cathode of the diode is connected to the capacitor, is used to prevent current interference and voltage clamping of the capacitor.

[0014] As a further improvement of the above technical solution, the high-voltage starting device further includes:

[0015] A level shift circuit, configured to convert a control logic signal generated inside the controller chip into a high-voltage control logic signal;

[0016] An inverter is connected to the controllable startup resistor. When the controller chip is working normally, the internal logic circuit of the controller chip determines the potential of the supply voltage of the capacitor. When the supply voltage exceeds the startup voltage of the controller chip, a high-level signal is output at both ends of the capacitor and converted into a low-level signal that turns off the high-voltage resistor through the level shift circuit and the inverter.

[0017] As a further improvement of the above technical solution, when the gate of the controllable starting resistor receives a low-level signal, the controllable starting resistor is turned off.

[0018] As a further improvement of the above technical solution, when the power supply voltage is lower than the preset voltage, the gate of the controllable starting resistor floats, the controllable resistor is turned on and charges the capacitor, so that the circuit is restarted.

[0019] As a further improvement of the above technical solution, the doping impurity of the polysilicon layer is N-type phosphorus, the doping concentration is between 1~8*10E13 / cm2, the injection energy is between 30~100Kev, and the sheet resistance is 100K~10M ohm / square.

[0020] As a further improvement of the above technical solution, the barrier layer and the voltage-resistant layer are made of different materials. The barrier layer is made of silicon nitride with a thickness of 200 to 1000 angstroms; the voltage-resistant layer is made of silicon dioxide with a thickness of 5000 to 10000 angstroms.

[0021] As a further improvement of the above technical solution, the dielectric layer is prepared by a chemical mechanical planarization process, and the thickness of the dielectric layer is between 1000 and 3000 angstroms.

[0022] As a further improvement of the above technical solution, a contact hole connected to the polysilicon layer is provided below the high-voltage electrode, and a welding block for leading out the pins of the voltage input end during packaging is provided above the high-voltage electrode.

[0023] In the second aspect, the present invention also provides a high-voltage starting system, including the above-mentioned high-voltage starting device, a voltage input end, a voltage output end and a comparator, one end of the comparator is connected to the controller chip, the other end of the comparator is connected to the voltage output end, the controllable starting resistor is connected in series with the controller circuit and connected between the voltage input end and the voltage output end, the high-voltage electrode is connected to the voltage input end, the low-voltage electrode is connected to the capacitor, and the gate is close to the low-voltage electrode.

[0024] Compared with the prior art, the present invention provides a high-voltage starting device and system with the following beneficial effects:

[0025] 1. Prepare a field oxide layer, a barrier layer and a voltage-resistant layer in the controllable startup resistor as a resistor voltage-resistant layer. Connect the controllable startup resistor to the controller circuit and share the same semiconductor substrate. The controller resistor includes a low-voltage NMOS and a low-voltage PMOS, which can effectively reduce the conduction loss of the high-voltage startup device.

[0026] 2. The concentration of the polysilicon layer is lower than that of the traditional square resistor. The high-voltage electrode above the polysilicon layer is directly connected to the high-voltage signal at the power input end, the low-voltage electrode is connected to the capacitor, and the gate is close to the low-voltage electrode. This can ensure that when the controllable starting resistor withstands a peak withstand voltage of about 700V, the resistance withstand voltage layer under the polysilicon layer will not be broken down.

[0027] 3. Integrating a discrete fixed-value startup resistor into the controller chip and increasing its resistance improves the reliability of the high-voltage startup system and reduces manufacturing costs. The traditional fixed-value startup resistor is transformed into a controllable startup resistor through special processes and design. After the controller chip starts, the resistor is turned off, reducing startup losses. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0029] Figure 1 A schematic structural diagram of a high-voltage starting device provided in an embodiment of the present invention;

[0030] Figure 2 A top view of a high-voltage starting device provided in an embodiment of the present invention;

[0031] Figure 3 A structural block diagram of a high-voltage startup device provided in an embodiment of the present invention;

[0032] Figure 4 A circuit diagram of a high-voltage starting system provided by an embodiment of the present invention.

[0033] The main component symbols are described as follows:

[0034] 1-Controllable start-up resistor; 2-Controller circuit; 3-Semiconductor substrate; 4-N well; 5-Field oxide layer; 6-Barrier layer; 7-Voltage-resistant layer; 8-Polysilicon layer; 9-Dielectric layer; 10-High voltage electrode; 11-Low voltage electrode; 12-Gate; 13-First power tube; 14-Second power tube; 15-Capacitor; 16-Controller chip; 17-Diode; 18-Level shift circuit; 19-Inverter; 20-Voltage input terminal; 21-Voltage output terminal; 22-Comparator; 23-Contact hole. DETAILED DESCRIPTION

[0035] The following describes embodiments of the present invention in detail. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended only to explain the present invention and are not to be construed as limiting the present invention.

[0036] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be an intermediate element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be an intermediate element. Conversely, when an element is referred to as being "directly on" another element, there is no intermediate element. The terms "vertical," "horizontal," "left," "right," and similar expressions used herein are for illustrative purposes only.

[0037] In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "connect," "fixed," etc. should be understood broadly. For example, they may refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0038] See Figure 1 、 Figure 2 and Figure 3 , the present invention provides a high-voltage starting device, including a controllable starting resistor 1, a controller circuit 2 and a capacitor 15;

[0039] The controllable startup resistor 1 includes a semiconductor substrate 3, an N-well 4 formed on the semiconductor substrate 3, a field oxide layer 5 formed on the N-well 4, a barrier layer 6 formed on the field oxide layer 5, a voltage-resistant layer 7 formed on the barrier layer 6, a polysilicon layer 8 formed on the voltage-resistant layer 7, a dielectric layer 9 located on the field oxide layer 5, the voltage-resistant layer 7 and the polysilicon layer 8 and connected to the barrier layer 6, a high-voltage electrode 10 and a low-voltage electrode 11 formed on the dielectric layer 9 and extending to the polysilicon layer 8 at intervals, and a dielectric layer 9 located on the dielectric layer 9. The gate 12 is between the electrode 10 and the low-voltage electrode 11, wherein the high-voltage electrode 10 is used to connect to the high-voltage input signal, the low-voltage electrode 11 is connected to the capacitor 15 at the low-voltage end, the N-well 4 is circular, the voltage-resistant layer 7 is a concentric circle with a radius smaller than the N-well 4, and the polysilicon layer 8 on the voltage-resistant layer 7 is spirally distributed starting from the central circle. The high-voltage electrode 10 of the controllable starting resistor 1 is located at the center of the concentric circle, and the low-voltage electrode 11 is located at the edge of the concentric circle. The distance between the gate 12 and the low-voltage electrode 11 is less than 1% of the distance between the gate 12 and the high-voltage electrode 10;

[0040] The controller circuit 2 includes a first power tube 13 connected to the controllable startup resistor 1 and a second power tube 14 connected to the first power tube 13. The first power tube 13, the second power tube 14 and the controllable startup resistor 1 share the same semiconductor substrate 3. The first power tube 13 is a low-voltage NMOS, and the second power tube 14 is a low-voltage PMOS.

[0041] The capacitor 15 is connected between the controllable starting resistor 1 and the controller circuit 2 and is used to supply power to the controller chip 16 connected to the controller circuit 2;

[0042] Among them, when the gate 12 is connected to the voltage and is in a floating state until the controllable starting resistor 1 is turned on, the capacitor 15 starts to charge. When the voltage charged by the capacitor 15 exceeds the starting voltage of the controller chip 16, the controller chip 16 works normally.

[0043] In this embodiment, the preparation process of the controllable starting resistor 1 mainly adopts photolithography and etching technology, and the control circuit and the controllable starting resistor are integrated on the same semiconductor substrate. The junction depth of the N well 4 is greater than the field oxide layer 5, the barrier layer 6 is a corrosion barrier layer, and the voltage-resistant layer 7 is a resistance voltage-resistant layer. The materials of the corrosion barrier layer and the resistance voltage-resistant layer are different. The material of the barrier layer 6 is silicon nitride with a thickness between 200 and 1000 angstroms. The material of the voltage-resistant layer 7 is silicon dioxide with a thickness between 5000 and 10000 angstroms. The combined thickness of the corrosion barrier layer, the resistance voltage-resistant layer and the field oxide layer is greater than 10000 angstroms, which can ensure that when the controlled starting resistor withstands a peak withstand voltage of about 700V, the internal structure of the controlled resistor will not be broken down. Unlike conventional resistor films, polysilicon layer 8 has a doping concentration far lower than conventional thin films with a sheet resistance of 1-3k ohm / square. It is doped with an N-type impurity, preferably phosphorus, at a concentration between 1 and 8*10E13 / cm2, with an injection energy between 30 and 100 keV. The sheet resistance is 100k to 10M ohm / square. Because its doping concentration is far lower than the conventional high-resistance polysilicon layer of approximately 3k, the charge within it is more easily directly influenced and controlled by the electric field. The controllable startup resistor 1, first power transistor 13, and second power transistor 14 share the same semiconductor substrate 3. First power transistor 13 is a low-voltage NMOS transistor, and second power transistor 14 is a low-voltage PMOS transistor. When turned on, both first and second power transistors 13 and 14 have an on-resistance. Current dissipates energy in this resistance, which is known as conduction loss.

[0044] It should be noted that the dielectric planarization process of the dielectric layer above the polysilicon layer adopts CMP (chemical mechanical planarization process), which can accurately control the thickness of the dielectric layer above the polysilicon film. The preferred thickness is between 1000 and 3000 angstroms. The thinner the thickness, the stronger the gate's control ability over the polysilicon film below.

[0045] See Figure 2A high-voltage electrode 10 (HV), a low-voltage electrode 11 (LV), and a gate 12 (G) are located above the polysilicon layer 8. The HV terminal is directly connected to the high-voltage power input terminal 20 (Vin) signal and can withstand high voltage. The LV terminal is used to connect to the low-voltage capacitor, and the gate 12 is located near the LV terminal. The circular N-well below the polysilicon layer 8 improves the voltage resistance of the controllable startup resistor 1. The field oxide layer 5, barrier layer 6, and voltage-resistant layer 7 form the resistance voltage-resistant layer. The resistance voltage-resistant layer is a concentric circle with a slightly smaller radius. The polycrystalline high-resistance resistors on the resistance voltage-resistant layer are distributed in a spiral shape starting from the central circle, and the spacing between the resistor strips is between 2 and 5 microns. Preferably, the square resistance of the polysilicon layer is 100Kohm, and the diameter of the polycrystalline in the central area is 50 microns; the length of the polycrystalline high resistor is 300 microns, the width is 3 microns, the spacing is 3 microns, the resistance value of the resistor is 10Mohm, the diameter of the resistor voltage-resistant layer is 80 microns, and the diameter of the N well is 100um. The HV end of the controllable starting resistor is connected to the high-voltage signal of the power input end and is located in the center of the concentric circle, while the LV end is located at the edge of the concentric circle. The gate metal block of the controllable starting resistor is close to the side of the LV end, and the distance from the LV end is less than 1% of the distance from the HV end. When a voltage of more than 500V is applied to the HV end, the induced voltage under the gate is below 5V, which can ensure that the controllable starting resistor is turned off under a lower voltage signal and the dielectric layer below it will not be damaged by high voltage breakdown.

[0046] It should be noted that the field oxide layer of the controllable startup resistor is connected to the field oxide layer of the low-voltage NMOS, which is in turn connected to the field oxide layer of the low-voltage PMOS (LVPMOS). A contact hole connecting to the polysilicon layer is provided below the high-voltage electrode, and a pad is provided above the high-voltage electrode for connecting the voltage input pins during packaging. The overall diameter of the controllable startup resistor is approximately 100 microns, while the area of ​​a traditional high-voltage device is approximately 500 x 500 microns, reducing the device's fabrication area and power loss.

[0047] It should be understood that the polysilicon layer, or high-resistance thin film, is doped with N-type impurities. When a negative electric field is applied across it, positive charges are induced in the film, gradually depleting the electrons within it, thereby gradually increasing the resistance. Under a certain bias voltage, the resistor can be transformed from a conductor to an insulator, effectively shutting off. When a positive electric field is applied across it, negative charges are induced in the film, significantly reducing its resistance and increasing its conductivity.

[0048] Optionally, the high-voltage starting device further includes:

[0049] The diode 17 has an anode connected to the controllable starting resistor 1 and a cathode connected to the capacitor 15 , and is used to prevent current interference and voltage clamping of the capacitor 15 .

[0050] a level shift circuit 18 for converting a control logic signal generated inside the controller chip 16 into a high-voltage control logic signal;

[0051] The inverter 19 is connected to the controllable starting resistor 1. When the controller chip 16 is working normally, the internal logic circuit of the controller chip 16 determines the potential of the supply voltage of the capacitor 15. When the supply voltage exceeds the starting voltage of the controller chip 16, a high-level signal is output at both ends of the capacitor 15 and converted into a low-level signal that turns off the high-voltage resistor through the level shift circuit 18 and the inverter 19.

[0052] In this embodiment, when the gate of the controllable startup resistor receives a low-level signal, the controllable startup resistor is turned off. When the supply voltage is lower than the preset voltage, the gate of the controllable startup resistor floats, the controllable resistor is turned on and charges the capacitor, restarting the circuit.

[0053] See Figure 4 The present invention also provides a power management system, including the above-mentioned high-voltage starting device, a voltage input terminal 20, a voltage output terminal 21 and a comparator 22, one end of the comparator 22 is connected to the controller chip 16, and the other end of the comparator 22 is connected to the voltage output terminal 21, the controllable starting resistor 1 is connected in series with the controller circuit 2 and connected between the voltage input terminal 20 and the voltage output terminal 21, the high-voltage electrode 10 is connected to the voltage input terminal 20, the low-voltage electrode 11 is connected to the capacitor 15, and the gate 12 is close to the low-voltage electrode 11.

[0054] In this embodiment, the power management system is primarily used in AC / DC switching power supplies. The voltage input terminal of the controller chip is connected between a controllable startup resistor and a capacitor input terminal. The feedback terminal of the controller chip is connected to a comparator. The driver terminal of the controller chip is connected to a power switch M1. The ground terminal of the controller chip is grounded. The voltage input terminal of the controller chip is also connected to another circuit containing other diodes, capacitors, etc. The gate of the controllable startup resistor R is in a floating state with no signal. When the controllable startup resistor is turned on, the Vin terminal charges the capacitor C through the controllable startup resistor R and the forward diode D1. When the capacitor voltage VCC exceeds the controller chip's startup voltage Vst, the controller chip operates normally. After the controller chip operates normally, its internal logic circuit logically determines the voltage level of VCC. When VCC exceeds Vst, it outputs a high-level signal VCC1. This high-level signal is converted to a low-level signal, which turns off the high-voltage resistor, through a level shift circuit and an inverter. When the gate of the controlled startup resistor R receives a low-level signal, it turns off the resistor, eliminating losses in the controlled startup circuit. Diode D1 prevents capacitive current interference and acts as a voltage clamp. When VCC falls below the normal operating voltage, no electrical signal is output, the gate of the controlled startup resistor floats, and the controlled startup resistor turns on, starting to charge the startup capacitor and restarting the circuit.

[0055] It should be noted that integrating a traditional discrete fixed-resistance startup resistor into the controller chip and increasing its resistance improves the reliability of the high-voltage startup system and reduces manufacturing costs. Through special processing and design, the traditional fixed-resistance startup resistor is transformed into a controllable startup resistor. After the controller chip starts, the resistor is turned off, thereby reducing startup losses.

[0056] The present invention provides a high-voltage startup device and system. By preparing a field oxide layer, a barrier layer, and a voltage-resistant layer within a controllable startup resistor as the resistor's voltage-resistant layer, the controllable startup resistor is connected to a controller circuit and shares the same semiconductor substrate. The controller resistor includes LVNMOS and LVPMOS, which can effectively reduce the conduction loss of the high-voltage startup device. The polysilicon layer uses a concentration lower than that of traditional square resistors. The high-voltage electrode above the polysilicon layer is directly connected to the high-voltage signal at the power input end, the low-voltage electrode is connected to the capacitor, and the gate is close to the low-voltage electrode. This ensures that when the controllable startup resistor withstands a peak withstand voltage of approximately 700V, the dielectric below the polysilicon layer will not be broken down. The discrete fixed-resistance startup resistor is integrated into the controller chip, and the resistance value is increased to improve the reliability of the high-voltage startup system and save preparation costs. The traditional fixed-resistance startup resistor is converted into a controllable startup resistor through special processes and procedures. The resistor is turned off after the controller chip is started, thereby reducing startup losses.

[0057] In all examples shown and described herein, any specific values ​​should be interpreted as merely exemplary and not limiting, and thus other examples of the exemplary embodiments may have different values.

[0058] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0059] The above-described embodiments merely illustrate several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that variations and modifications are possible without departing from the scope of the present invention, and such variations and modifications are fully within the scope of protection of the present invention.

Claims

1. A high voltage starting device, characterized in that: Includes controllable startup resistor, controller circuit and capacitor; The controllable startup resistor includes a semiconductor substrate, an N-well formed on the semiconductor substrate, a field oxide layer formed on the N-well, a barrier layer formed on the field oxide layer, a voltage-resistant layer formed on the barrier layer, a polysilicon layer formed on the voltage-resistant layer, a dielectric layer located on the field oxide layer, the voltage-resistant layer and the polysilicon layer and connected to the barrier layer, a high-voltage electrode and a low-voltage electrode formed at intervals on the dielectric layer and extending through the dielectric layer to the polysilicon layer, and a gate formed on the dielectric layer and located between the high-voltage electrode and the low-voltage electrode, wherein the high-voltage electrode The gate is used to connect to a high-voltage input signal, the low-voltage electrode is connected to a capacitor at a low-voltage end, the N-well is circular, the voltage-resistant layer is a concentric circle with a radius smaller than that of the N-well, and the polysilicon layer on the voltage-resistant layer is distributed in a spiral shape starting from the central circle. The high-voltage electrode of the controllable startup resistor is located at the center of the concentric circle, and the low-voltage electrode is located at the edge of the concentric circle. The distance between the gate and the low-voltage electrode is less than 1% of the distance between the gate and the high-voltage electrode. The doping impurity of the polysilicon layer is N-type phosphorus, the injection energy is 30-100Kev, and the sheet resistance is 100K-10M ohm / square. The controller circuit includes a first power tube connected to the controllable startup resistor and a second power tube connected to the first power tube, wherein the first power tube, the second power tube and the controllable startup resistor share the same semiconductor substrate, the first power tube is a low-voltage NMOS, and the second power tube is a low-voltage PMOS; The capacitor is connected between the controllable starting resistor and the controller circuit, and is used to supply power to the controller chip connected to the controller circuit; When the gate access voltage is in a floating state until the controllable startup resistor is turned on, the capacitor starts to charge, and when the voltage of the charged capacitor exceeds the startup voltage of the controller chip, the controller chip works normally.

2. The high-voltage starting device according to claim 1, characterized in that: The high-voltage starting device further includes: A diode, wherein the anode of the diode is connected to the controllable starting resistor, and the cathode of the diode is connected to the capacitor, is used to prevent current interference and voltage clamping of the capacitor.

3. The high-voltage starting device according to claim 1, characterized in that: The high-voltage starting device further includes: A level shift circuit, configured to convert a control logic signal generated inside the controller chip into a high-voltage control logic signal; An inverter is connected to the controllable startup resistor. When the controller chip is working normally, the internal logic circuit of the controller chip determines the potential of the supply voltage of the capacitor. When the supply voltage exceeds the startup voltage of the controller chip, a high-level signal is output at both ends of the capacitor and converted into a low-level signal that turns off the high-voltage resistor through the level shift circuit and the inverter.

4. The high-voltage starting device according to claim 3, characterized in that: When the gate of the controllable startup resistor receives a low-level signal, the controllable startup resistor is turned off.

5. The high-voltage starting device according to claim 3, characterized in that: When the supply voltage is lower than the preset voltage, the gate of the controllable startup resistor floats, the controllable resistor is turned on and charges the capacitor, restarting the circuit.

6. The high-voltage starting device according to claim 1, characterized in that: The barrier layer and the voltage-resistant layer are made of different materials. The barrier layer is made of silicon nitride with a thickness of 200 to 1000 angstroms; the voltage-resistant layer is made of silicon dioxide with a thickness of 5000 to 10000 angstroms.

7. The high-voltage starting device according to claim 1, characterized in that: The dielectric layer is prepared by a chemical mechanical planarization process, and the thickness of the dielectric layer is between 1000 and 3000 angstroms.

8. The high-voltage starting device according to claim 1, characterized in that: A contact hole connected to the polysilicon layer is provided below the high-voltage electrode, and a welding block for leading out the pins of the voltage input end during packaging is provided above the high-voltage electrode.

9. A power management system, comprising a high-voltage starting device, a voltage input terminal, a voltage output terminal and a comparator as described in any one of claims 1 to 8, one end of the comparator is connected to a controller chip, the other end of the comparator is connected to the voltage output terminal, the controllable starting resistor is connected in series with the controller circuit and connected between the voltage input terminal and the voltage output terminal, the high-voltage electrode is connected to the voltage input terminal, the low-voltage electrode is connected to the capacitor, and the gate is close to the low-voltage electrode.

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