Solid-state imaging device and electronic apparatus

Abstract

The present application relates to a solid-state imaging device and an electronic apparatus. In the solid-state imaging device, normal pixels and phase difference detection pixels are arranged in a mixed manner, the normal pixels generate pixel signals of an image, and the phase difference detection pixels generate pixel signals to be used in calculating a phase difference signal for controlling an image plane phase difference autofocus function, in the phase difference detection pixels, a shared type on-chip lens corresponding to each group of a plurality of adjacent phase difference detection pixels is formed for condensing incident light to a photoelectric conversion section that generates the pixel signals to be used in calculating the phase difference signal, in the normal pixels, a discrete type on-chip lens corresponding to each normal pixel is formed for condensing incident light to a photoelectric conversion section, and a boundary between the discrete type on-chip lens formed in the normal pixels and the shared type on-chip lens formed in the phase difference detection pixels is rectangular or hexagonal.

Description

[0001] This application is a divisional application of patent application No. 201580067441.6, filed on December 8, 2015, entitled "Solid-State Imaging Device and Electronic Apparatus". Technical Field

[0002] The present invention relates to solid-state imaging devices and electronic devices, and more particularly, to solid-state imaging devices and electronic devices suitable for use in the presence of phase difference detection pixels for realizing image-surface phase difference (AF) autofocus. Background Technology

[0003] Conventionally, image plane phase difference AF is known as an AF function used in electronic devices with photographic capabilities, such as digital cameras (see, for example, Patent Document 1). In solid-state imaging devices capable of implementing image plane phase difference AF, normal pixels for obtaining pixel signals (color signals) for constituting an image and phase difference detection pixels for pupil splitting of incident light are arranged at predetermined positions.

[0004] In a conventional phase difference detection pixel, a metal light-shielding film is formed between the on-chip lens and the photoelectric conversion layer. This metal light-shielding film has an opening offset relative to the optical axis (optical center) of the on-chip lens. Furthermore, a light-shielding structure is provided between pairs of phase difference detection pixels arranged adjacent to each other. This light-shielding structure is used to reduce optical color mixing.

[0005] A phase difference signal is calculated based on the outputs of the phase difference detection pixel pairs with different opening positions (e.g., a phase difference detection pixel with an opening on the left and a phase difference detection pixel with an opening on the right). The calculated phase difference signal is used to control focusing.

[0006] List of cited references

[0007] Patent documents

[0008] Patent Document 1: Japanese Patent Application Publication No. 2007-304188 Summary of the Invention

[0009] Technical problems to be solved

[0010] In the conventional phase difference detection pixels described above, a metal light-blocking film restricts the opening. Therefore, a decrease in sensitivity to incident light compared to normal pixels is unavoidable. This can have adverse effects in practical applications. For example, in low-light photography, image plane phase difference autofocus (AF) cannot be utilized.

[0011] Furthermore, with the increasing number of pixels in solid-state imaging devices in the future, pixels will become miniaturized. In this case, not only the reflection of incident light on the metal light-shielding film, but also the effects of electromagnetic wave-related behaviors such as diffraction will become significant. For example, a decrease in the accuracy of phase difference detection and a degradation in image quality characteristics due to the incorporation of reflected / diffracted components into adjacent pixels may occur.

[0012] Furthermore, phase difference detection pixels that include a metallic light-blocking film exhibit a very narrow angular range of sensitivity to changes in the angle of incidence. Therefore, such phase difference detection pixels are difficult to use with components such as lenses with small f-numbers or optical zoom lenses where the chief ray angle (CRA) can vary significantly.

[0013] The present invention was made in view of the above-mentioned situation, and the object of the present invention is to provide a phase difference detection pixel that can avoid defects such as decreased sensitivity to incident light and decreased accuracy of phase difference detection.

[0014] Technical solutions to solve technical problems

[0015] The solid-state imaging device of the first aspect of the present invention is a solid-state imaging device in which normal pixels and phase difference detection pixels are arranged in a mixed manner. The normal pixels generate pixel signals for an image, and the phase difference detection pixels generate pixel signals to be used in calculating a phase difference signal for controlling the image plane phase difference AF function. Here, in the phase difference detection pixels, a shared on-chip lens is formed in such a way that it corresponds to each group of multiple adjacent phase difference detection pixels. The shared on-chip lens is used to focus incident light onto a photoelectric conversion unit, which generates pixel signals to be used in calculating the phase difference signal.

[0016] In the normal pixels, a discrete on-chip lens can be formed in a manner corresponding to each normal pixel. The discrete on-chip lens is used to focus incident light onto the photoelectric conversion unit that generates the pixel signal of the image.

[0017] An inter-pixel light-blocking structure can be provided between the normal pixels and between the normal pixels and the phase difference detection pixel.

[0018] A pixel-to-pixel light-blocking structure can also be provided between the phase difference detection pixels.

[0019] The phase difference detection pixel may include an opening-blocking structure that restricts the opening of the photoelectric conversion section of the phase difference detection pixel.

[0020] In the phase difference detection pixels, a common on-chip lens can be formed in such a way that it corresponds to each group of two adjacent pixels.

[0021] In the phase difference detection pixels, two shared on-chip lenses can be formed in such a way that they correspond to each group of three adjacent pixels.

[0022] The boundary between the discrete on-chip lens formed in the normal pixel and the shared on-chip lens formed in the phase difference detection pixel can be approximately rectangular or approximately hexagonal.

[0023] A pseudo-focusing element structure can be formed between the discrete on-chip lens formed in the normal pixels and the shared on-chip lens formed in the plurality of adjacent phase difference detection pixels.

[0024] The pseudo-focusing element structure can be formed in an asymmetric manner relative to the plurality of phase difference detection pixels that share the common type on-chip lens.

[0025] The plurality of phase difference detection pixels sharing the common type on-chip lens can be arranged in a checkerboard pattern.

[0026] The phase difference detection pixels can be arranged in a straight line in at least one of the row and column directions.

[0027] The phase difference detection pixels can be arranged in a strip pattern in at least one of the row and column directions.

[0028] The phase difference detection pixels, arranged in a strip pattern in adjacent strips, are able to have phases offset from each other.

[0029] The device can be configured with color filters that have selective sensitivity to three or more different wavelengths in a manner corresponding to each pixel, and the plurality of phase difference detection pixels that share the common type on-chip lens can include the color filters that have selective sensitivity to the same wavelength.

[0030] The plurality of phase difference detection pixels sharing the common type on-chip lens can be provided with color filters that have selective sensitivity to three or more different wavelengths in a manner corresponding to each pixel, and the color filters that have selective sensitivity to different wavelengths can be included in the plurality of phase difference detection pixels sharing the common type on-chip lens.

[0031] The pixel size of the phase difference detection pixel can be larger than the pixel size of the normal pixel.

[0032] All pixels including color filters that have selective sensitivity to a specific wavelength among three or more different wavelengths can be said phase difference detection pixels, and the output of said phase difference detection pixels can also be used as pixel signals of an image.

[0033] The size of the phase difference detection pixel sharing the common type on-chip lens can be an integer multiple of the size of the normal pixel. The photoelectric conversion section of the phase difference detection pixel is divided into multiple regions including a central region. The same oblique incidence characteristics as the photoelectric conversion section of the normal pixel can be obtained from the central region, and the output of the central region can also be used as the pixel signal of the image.

[0034] The size of the phase difference detection pixel sharing the common type on-chip lens can be twice the size of the normal pixel. The photoelectric conversion section of the phase difference detection pixel is divided into three regions of approximately 0.5:1:0.5, and the output of the region corresponding to 1 in the above ratio can also be used as the pixel signal of the image.

[0035] The size of the phase difference detection pixel sharing the common type on-chip lens can be twice the size of the normal pixel. The photoelectric conversion section of the phase difference detection pixel is divided into four regions of approximately 0.5:0.5:0.5:0.5. The sum of the outputs of the two regions corresponding to the 0.5 and 0.5 located at the center of the above ratio can also be used as the pixel signal of the image.

[0036] The electronic device, as a second aspect of the present invention, is an electronic device including a solid-state imaging device. In the solid-state imaging device, normal pixels and phase difference detection pixels are arranged in a mixed manner. The normal pixels generate pixel signals for an image, and the phase difference detection pixels generate pixel signals to be used in calculating a phase difference signal for controlling the image plane phase difference (AF) function. Here, in each phase difference detection pixel, a shared on-chip lens is formed in a manner corresponding to each group of multiple adjacent phase difference detection pixels. The shared on-chip lens is used to focus incident light onto a photoelectric conversion unit, which generates the pixel signals to be used in calculating the phase difference signal.

[0037] Beneficial effects of the present invention

[0038] According to a first aspect of the present invention, a solid-state imaging device can be realized that avoids defects such as decreased sensitivity to incident light and decreased accuracy of phase difference detection.

[0039] According to a second aspect of the present invention, a high-precision electronic device with image plane phase difference (AF) function can be realized. Attached Figure Description

[0040] Figure 1 This is a perspective view showing an example of the construction of a normal pixel in a solid-state imaging device to which the present invention is applied.

[0041] Figure 2 Is with Figure 1 The corresponding cross-sectional view.

[0042] Figure 3 This is a perspective view showing a first construction example of a phase difference detection pixel in a solid-state imaging device to which the present invention is applied.

[0043] Figure 4 Is with Figure 3 The corresponding cross-sectional view.

[0044] Figure 5 yes Figure 3 A top view of the shared type on-plate lens.

[0045] Figure 6 This is a cross-sectional view showing a second construction example of a phase difference detection pixel in a solid-state imaging device to which the present invention is applied.

[0046] Figure 7 yes Figure 6 A top view of the shared type on-plate lens.

[0047] Figure 8 This is a cross-sectional view showing a third construction example of a phase difference detection pixel in a solid-state imaging device to which the present invention is applied.

[0048] Figure 9 yes Figure 8 A top view of the shared type on-plate lens.

[0049] Figure 10 This is a diagram used to illustrate the relationship between the position of the pseudo-focusing element structure and the correction amount of the pupil correction in the third construction example of the phase difference detection pixel.

[0050] Figure 11 This is a diagram used to illustrate the relationship between the position of the pseudo-focusing element structure and the correction amount of the pupil correction in the third construction example of the phase difference detection pixel.

[0051] Figure 12This is a diagram used to illustrate the relationship between the position of the pseudo-focusing element structure and the correction amount of the pupil correction in the third construction example of the phase difference detection pixel.

[0052] Figure 13 This is a cross-sectional view showing a variant of the third construction example of the phase difference detection pixel.

[0053] Figure 14 This is a perspective view showing a fourth construction example of a phase difference detection pixel in a solid-state imaging device to which the present invention is applied.

[0054] Figure 15 Is with Figure 14 The corresponding cross-sectional view.

[0055] Figure 16 yes Figure 14 A top view of the shared type on-plate lens.

[0056] Figure 17 This is a cross-sectional view showing a fifth construction example of a phase difference detection pixel in a solid-state imaging device to which the present invention is applied.

[0057] Figure 18 yes Figure 17 A top view of the shared type on-plate lens.

[0058] Figure 19 This is a graph used to illustrate the incident angle dependence of the device sensitivity in the first and fourth construction examples.

[0059] Figure 20 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0060] Figure 21 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0061] Figure 22 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0062] Figure 23 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0063] Figure 24 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0064] Figure 25 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0065] Figure 26 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0066] Figure 27 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0067] Figure 28 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0068] Figure 29 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0069] Figure 30 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0070] Figure 31 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0071] Figure 32 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0072] Figure 33 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0073] Figure 34 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0074] Figure 35 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0075] Figure 36 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0076] Figure 37 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0077] Figure 38 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0078] Figure 39 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0079] Figure 40 This is a diagram showing an example of the arrangement of a variant of the phase difference detection pixels.

[0080] Figure 41 This diagram illustrates the problem when the output of the phase difference detection pixel is used as a color signal.

[0081] Figure 42 This is a diagram illustrating a fourth construction example of a phase difference detection pixel in a solid-state imaging device to which the present invention is applied.

[0082] Figure 43 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0083] Figure 44This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0084] Figure 45 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0085] Figure 46 This is a diagram illustrating a fifth construction example of a phase difference detection pixel in a solid-state imaging device to which the present invention is applied.

[0086] Figure 47 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0087] Figure 48 This is a diagram illustrating a sixth construction example of a phase difference detection pixel and its arrangement example.

[0088] Figure 49 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0089] Figure 50 This is a diagram showing a seventh construction example of phase difference detection pixels and an example of their arrangement.

[0090] Figure 51 This is a diagram showing the arrangement changes of the phase difference detection pixels.

[0091] Figure 52 This is a diagram illustrating an example of the use of a solid-state imaging device applying the present invention. Detailed Implementation

[0092] The best mode for carrying out the invention (hereinafter referred to as the embodiment) will be described in detail below with reference to the accompanying drawings.

[0093] Construction example of a normal pixel in a solid-state imaging device applying the present invention

[0094] First, although the present invention mainly relates to phase difference detection pixels arranged in solid-state imaging devices, in order to compare with phase difference detection pixels, a construction example of a normal pixel arranged together with phase difference detection pixels in a solid-state imaging device to which the present invention is applied will be described first.

[0095] Figure 1 This is a schematic perspective view showing only the normal pixels 30 in the solid-state imaging device to which the present invention is applied, which are in a 4×4 pixel range. Figure 2 It is along Figure 1 A schematic cross-sectional view of section A-A'.

[0096] The normal pixel 30 includes a discrete on-chip lens 31, a color filter layer 32, an inter-pixel light-shielding structure 33, a photoelectric conversion unit 34, and a signal wiring layer 35, which are arranged sequentially from the upper surface side (incident surface side).

[0097] The discrete on-chip lens 31 is formed corresponding to each pixel so that the incident electromagnetic wave (hereinafter referred to as incident light) can more effectively enter the photoelectric conversion unit 34 corresponding to the layer below the discrete on-chip lens 31. The color filter layer 32 is formed in such a way that each pixel is covered with a color filter colored according to any of the R, G and B colors arranged, for example, in a Bayer array, so that the portion of the incident light with a specific wavelength passes through and goes to the layer below the color filter layer 32.

[0098] The inter-pixel light-shielding structure 33 is made of a metal material or the like to reduce optical color mixing between adjacent pixels. The photoelectric conversion unit 34 includes a photodiode that generates and accumulates charge, which depends on incident light entering the photoelectric conversion unit 34 via a discrete on-chip lens 31 and a color filter layer 32. The signal wiring layer 35 reads out the signal charge generated and accumulated by the photoelectric conversion unit 34 and outputs the read-out signal charge to subsequent stages.

[0099] First Construction Example of Phase Difference Detection Pixel in Solid-State Imaging Device of the Present Invention

[0100] Next, a first construction example of the phase difference detection pixel in the solid-state imaging device of the present invention will be described. Figure 3 This is a schematic perspective view illustrating the range of 16 (=4×4) pixels in a solid-state imaging device to which the present invention is applied. Two of these 16 pixels are phase difference detection pixels 40, which serve as a first construction example. The other 14 pixels are normal pixels 30. Figure 4 It is along Figure 3 The diagram shows a schematic cross-sectional view taken from line A-A'. In this figure, the two pixels located in the center are phase difference detection pixels 40. It should be noted that components common to both phase difference detection pixels 40 and normal pixels 30 are labeled with the same symbols. Therefore, descriptions of these components will be appropriately omitted. This also applies to the second construction example, etc., which will be described later.

[0101] The phase difference detection pixel 40 includes a common type on-chip lens 41, a color filter layer 32, an inter-pixel light-blocking structure 33, a photoelectric conversion unit 34, and a signal wiring layer 35 arranged sequentially from the upper surface side (incident surface side).

[0102] Figure 5 A top view of the shared on-chip lens 41 is shown. As shown in this figure, the shared on-chip lens 41 is formed to cover a plurality of (two in this figure) adjacent phase difference detection pixels 40. That is, Figure 3 and Figure 4The first construction example shown has a configuration in which two phase difference detection pixels 40 share a common type on-chip lens 41.

[0103] It should be noted that the inter-pixel light-blocking structure 33, which is formed between normal pixels 30 and between normal pixels 30 and phase difference detection pixels 40, is not formed between multiple phase difference detection pixels 40 that share a common on-chip lens 41. It should also be noted that the inter-pixel light-blocking structure 33 can also be formed between multiple phase difference detection pixels 40 that share a common on-chip lens 41.

[0104] As shown in this figure, in a solid-state imaging device with normal pixels 30 and phase difference detection pixels 40 arranged, the resolution and quality of the captured image can be improved through the normal pixels 30. Furthermore, in the phase difference detection pixels 40, light is not blocked by a light-blocking structure, and the phase difference is detected by the light-gathering capability of the shared on-chip lens 41. Therefore, phase difference detection with high sensitivity and good separation ratio characteristics becomes possible. Moreover, there are no obstacles in the optical path that cause light scattering or diffraction. Therefore, color mixing between adjacent pixels that may occur due to light scattering or diffraction can be suppressed. Thus, image quality degradation can also be prevented.

[0105] Second Construction Example of Phase Difference Detection Pixel in Solid-State Imaging Device of the Present Invention

[0106] Next, a second construction example of the phase difference detection pixel in the solid-state imaging device of the present invention will be described. Figure 6 This is a schematic cross-sectional view of four adjacent pixels in a solid-state imaging device using the present invention. In this figure, the two pixels located in the center are phase difference detection pixels 50, which are used as a second construction example.

[0107] The phase difference detection pixel 50, as the second construction example, is obtained by replacing the common on-chip lens 41 of the phase difference detection pixel 40, as the first construction example, with the common on-chip lens 51. That is, Figure 6 The second construction example shown has a configuration in which two phase difference detection pixels 50 share a common type on-chip lens 51.

[0108] Figure 7 A top view is shown of a shared on-chip lens 51 covering two phase difference detection pixels 50 and a discrete on-chip lens 31 covering adjacent normal pixels 30.

[0109] When the shared on-chip lens 51 is formed using a manufacturing method similar to that used for the discrete on-chip lens 31, the discrete on-chip lens 31 is embedded with virtually no gap between adjacent pixels, and its shape is approximately rectangular. On the other hand, the shared on-chip lens 51 is approximately hexagonal. Therefore, no gap is formed between the normal pixel 30 and the light-gathering element structure (on-chip lens) of the phase difference detection pixel 50. This improves the sensitivity of the phase difference detection pixel 50.

[0110] Third construction example of phase difference detection pixel in solid-state imaging device of the present invention

[0111] Next, a third construction example of a phase difference detection pixel in a solid-state imaging device using the present invention will be described. Figure 8 This is a schematic cross-sectional view of four adjacent pixels in a solid-state imaging device using the present invention. In this figure, the two pixels located in the center are phase difference detection pixels 60, which are used as a third construction example.

[0112] The phase difference detection pixel 60, as a third construction example, is obtained by replacing the common on-chip lens 41 of the phase difference detection pixel 40, as a first construction example, with a common on-chip lens 52 and a pseudo-condenser structure 53. That is, Figure 8 The third construction example shown has a configuration in which two phase difference detection pixels 60 share a common type on-chip lens 52 and a pseudo-focusing element structure 53.

[0113] Figure 9 A top view is shown of a shared on-chip lens 52 covering two phase difference detection pixels 60 and a pseudo-condenser structure 53, as well as a discrete on-chip lens 31 covering an adjacent normal pixel 30.

[0114] A pseudo-condenser structure 53 is formed between a shared on-chip lens 52 covering the phase difference detection pixel 60 and a discrete on-chip lens 31 covering the adjacent normal pixel 30. Due to the pseudo-condenser structure 53, the discrete on-chip lens 31 and the shared on-chip lens 52 can be fitted together with virtually no gaps between adjacent pixels. Furthermore, structural deformation of adjacent pixels can be minimized, and a phase difference detection pixel with reduced optical color mixing can be achieved.

[0115] The relationship between the position of the pseudo-focusing element structure 53 in the phase difference detection pixel 60 (as a third construction example) and the correction amount of the pupil correction.

[0116] then, Figures 10 to 12 It is used to explain as Figure 8The diagram illustrates the relationship between the position of the pseudo-condenser structure 53 in the phase difference detection pixel 60 of the third construction example and the correction amount of the pupil correction. It should be noted that figure A shows a top view of the shared on-chip lens 52 and the pseudo-condenser structure 53, as well as the discrete on-chip lens 31 of the adjacent normal pixel 30; figure B shows a cross-sectional view; and figure C shows the relationship between the device sensitivity and the incident angle of the incident light at each phase difference detection pixel.

[0117] Figure 10 The diagram illustrates a situation where the center of a shared on-chip lens 52 covering adjacent phase difference detection pixels 60A and 60B is formed at a position biased towards phase difference detection pixel 60A, and a pseudo-focusing element structure 53 is formed between the shared on-chip lens 52 and the discrete on-chip lens 31 of the normal pixel 30 adjacent to phase difference detection pixel 60B on the right side of this figure. In this case, phase difference detection pixel 60A has a higher sensitivity than phase difference detection pixel 60B for light along the vertical direction (incident angle of 0). As a result, phase difference detection pixel 60A has a higher sensitivity for light with an incident angle closer to the vertical direction. Therefore, it is possible to achieve a pair of phase difference detection pixels (phase difference detection pixels 60A and 60B) with an angle response such that phase difference detection pixel 60B has a relatively higher sensitivity to incident light from the left side of this figure along the oblique direction.

[0118] Figure 11 The diagram illustrates a scenario where the center of a shared on-chip lens 52 covering adjacent phase difference detection pixels 60A and 60B is formed at a position consistent with the center of these two pixels, and a pseudo-focusing element structure 53 is formed between the shared on-chip lens 52 and the discrete on-chip lenses 31 of the normal pixels 30 adjacent to phase difference detection pixels 60A and 60B, respectively. In this case, phase difference detection pixels 60A and 60B have equal sensitivity for light along the vertical direction (incident angle of 0 degrees). Therefore, for incident light along the left and right tilt directions, a pair of phase difference detection pixels (phase difference detection pixels 60A and 60B) with symmetrical angular responses based on a 0-degree incident angle can be realized.

[0119] Figure 12The diagram illustrates a situation where the center of a shared on-chip lens 52 covering adjacent phase difference detection pixels 60A and 60B is formed at a position biased towards phase difference detection pixel 60B, and a pseudo-focusing element structure 53 is formed between the shared on-chip lens 52 and the discrete on-chip lens 31 of the normal pixel 30 adjacent to phase difference detection pixel 60A on the left side of this figure. In this case, phase difference detection pixel 60B has a higher sensitivity than phase difference detection pixel 60A for light along the vertical direction (incident angle of 0). As a result, phase difference detection pixel 60B has a higher sensitivity for light with an incident angle closer to the vertical direction. Therefore, it is possible to achieve a pair of phase difference detection pixels (phase difference detection pixels 60A and 60B) with an angle response such that phase difference detection pixel 60A has a relatively higher sensitivity to incident light from the right side of this figure along the oblique direction.

[0120] By Figures 10 to 12 By arranging the paired phase difference detection pixels as shown in the figure at appropriate positions in a solid-state imaging device, a solid-state imaging device that is also suitable for zoom lenses with a wide CRA range can be realized.

[0121] A variation of the third construction example of the phase difference detection pixel in the solid-state imaging device of the present invention

[0122] then, Figure 13 It was shown as Figure 10 B to Figure 12 The third construction example shown in B is a variant of the phase difference detection pixel 60. Specifically, the shared on-chip lens 52 and the pseudo-condenser structure 53 covering the phase difference detection pixels 60A and 60B are formed in an offset manner so as to also cover the adjacent normal pixel 30, and the discrete on-chip lens 31 of the adjacent normal pixel 30 is also formed in an offset manner accordingly.

[0123] exist Figure 13 In a variant of A, the discrete on-plate lens 31, the shared on-plate lens 52, and the pseudo-condenser structure 53 are used to... Figure 10 The state shown in B is shifted to the right in this figure. In this case, the discrete on-chip lens 31 of the normal pixel 30C is offset to the right, and the pupil correction of the discrete on-chip lens 31 can be designed to be equivalent to the pupil correction of the main beam of the lens optical system. On the other hand, regarding the phase difference detection pixels 60A and 60B, a pseudo-condenser element structure 53 is formed on the right side, and therefore, for light coming from the left side, the phase difference becomes 0, or the outputs of the phase difference detection pixels 60A and 60B can be made equal.

[0124] exist Figure 13In the variant of B, the discrete on-plate lens 31, the shared on-plate lens 52, and the pseudo-condenser structure 53 are used to... Figure 11 The state shown in B is shifted to the right in this figure. In this case, the discrete on-chip lens 31 of the normal pixel 30C is offset to the right, and the pupil correction of the discrete on-chip lens 31 can be designed to be equivalent to the pupil correction of the main beam of the lens optical system. On the other hand, regarding the phase difference detection pixels 60A and 60B, pseudo-condenser element structures 53 are formed equally on the left and right sides, and therefore the outputs of the phase difference detection pixels 60A and 60B can be made equal at the same angle as the incident angle direction when the sensitivity at the normal pixel 30C becomes maximum.

[0125] exist Figure 13 In the variant of C, the discrete on-plate lens 31, the shared on-plate lens 52, and the pseudo-condenser structure 53 are used to... Figure 12 The state shown in B is shifted to the right in this figure. In this case, the discrete on-chip lens 31 of the normal pixel 30C is offset to the right, and the pupil correction of the discrete on-chip lens 31 can be designed to be equivalent to the pupil correction of the main beam of the lens optical system. On the other hand, regarding the phase difference detection pixels 60A and 60B, a pseudo-condenser element structure 53 is formed on the left side, and therefore, for light coming from the right side, the phase difference becomes 0, or the outputs of the phase difference detection pixels 60A and 60B can be made equal.

[0126] like Figure 13 As shown, if the pupil correction amount between the normal pixel 30 and the phase difference detection pixel 60 is designed to be at different levels by changing the size, width and arrangement of the pseudo-focusing element structure 53, then high-precision phase difference detection becomes possible even when the main beam angle varies greatly in a manner that depends on the focal length, such as in an optical zoom lens.

[0127] Fourth Construction Example of Phase Difference Detection Pixel in Solid-State Imaging Device of the Present Invention

[0128] Next, a fourth construction example of a phase difference detection pixel in a solid-state imaging device using the present invention will be described. Figure 14 This is a schematic perspective view illustrating the range of 16 (=4×4) pixels in a solid-state imaging device to which the present invention is applied. Three of these 16 pixels are phase difference detection pixels 80, which is a fourth construction example. The other 13 pixels are normal pixels 30. Figure 15 It is along Figure 14 A schematic cross-sectional view taken from A-A'. Figure 15 In the middle, the three pixels on the left are phase difference detection pixels 80.

[0129] The phase difference detection pixel 80 includes a common type on-chip lens 81, a color filter layer 32, an inter-pixel light-shielding structure 33, a photoelectric conversion unit 34, and a signal wiring layer 35 arranged sequentially from the upper surface side (incident surface side).

[0130] Figure 16 A top view of the shared on-chip lens 81 is shown. As shown in this figure, the shared on-chip lens 81 is formed by two shared on-chip lenses 81-1 and 81-2 to cover three adjacent phase difference detection pixels 80. That is, Figure 14 and Figure 15 The fourth construction example shown has a structure in which three phase difference detection pixels 80 share two common type on-chip lenses 81-1 and 81-2.

[0131] It should be noted that approximately half of the pixel opening of the central phase difference detection pixel 80, one of the three phase difference detection pixels 80 sharing two common on-chip lenses 81-1 and 81-2, is covered and blocked from light.

[0132] Fifth construction example of phase difference detection pixel in solid-state imaging device using the present invention

[0133] Next, a fifth construction example of a phase difference detection pixel in a solid-state imaging device using the present invention will be described. Figure 17 This is a schematic cross-sectional view of four adjacent pixels in a solid-state imaging device using the present invention. In this figure, the three pixels on the left are phase difference detection pixels 90, which is a fifth construction example.

[0134] The phase difference detection pixel 90, as the fifth construction example, is obtained by replacing the shared on-chip lens 81, which is the phase difference detection pixel 80, as the fourth construction example, with a shared on-chip lens 91. Like the shared on-chip lens 81, the shared on-chip lens 91 is formed by two shared on-chip lenses 91-1 and 91-2 to cover three adjacent phase difference detection pixels 90.

[0135] Figure 18 A top view is shown of two shared on-chip lenses 91-1 and 91-2 covering three phase difference detection pixels 90 and a discrete on-chip lens 31 covering the adjacent normal pixel 30.

[0136] When the shared on-chip lens 91 is formed using a manufacturing method similar to that used for the discrete on-chip lens 31, the discrete on-chip lens 31 is embedded between adjacent pixels with virtually no gap, and its shape is approximately rectangular. On the other hand, the shared on-chip lens 91 is approximately hexagonal. Therefore, no gap is formed between the normal pixel 30 and the light-gathering element structure (on-chip lens) of the phase difference detection pixel 90. This improves the sensitivity of the phase difference detection pixel.

[0137] The relationship between device sensitivity and incident angle of incident light when three adjacent phase difference detection pixels are covered by two shared on-chip lenses.

[0138] Figure 19 It is used to illustrate the relationship between device sensitivity and incident angle of incident light when three adjacent phase difference detection pixels are covered by two shared on-chip lenses.

[0139] In the upper part of this figure, the incident angle dependence of the device sensitivity of a conventional type of phase difference detection pixel A with a pixel opening partially blocked by light on the left and a conventional type of phase difference detection pixel B with a pixel opening partially blocked by light on the right are shown. Light blocking is performed using a metallic light-blocking film. Phase difference detection pixel A has higher sensitivity to light with a positive incident angle. Conversely, phase difference detection pixel B has higher sensitivity to light entering at a negative angle. Phase difference information for AF is calculated based on the difference in signal levels between phase difference detection pixels A and B.

[0140] In the middle of this figure, the incident angle dependence of the device sensitivity of two phase difference detection pixels 40A and 40B, which are covered by a common on-chip lens 41 as a first construction example of the present invention, is shown. Phase difference detection pixel 40A has higher sensitivity to light with a positive incident angle. Conversely, phase difference detection pixel 40B has higher sensitivity to light with a negative incident angle. It should be noted that, for comparison, the dashed lines in this graph correspond to the conventional phase difference detection pixels A and B shown in the upper part of this figure. As shown in this figure, in the phase difference detection pixels 40A and 40B as the first construction example, no sensitivity decrease occurs due to light blocking. Therefore, higher sensitivity than that of conventional phase difference detection pixels can be obtained at all incident angles.

[0141] In the lower part of this figure, the incident angle dependence of the device sensitivity of three phase difference detection pixels 80A, 80B, and 80C covered by two shared on-chip lenses 81, and three phase difference detection pixels 80D, 80E, and 80F covered by two shared on-chip lenses 81, as a fourth construction example of the present invention, is shown. It should be noted that phase difference detection pixel 80B has a pixel opening with the left half blocked from light, and phase difference detection pixel 80E has a pixel opening with the right half blocked from light.

[0142] Phase difference detection pixel 80A has higher sensitivity to light with a positive angle of incidence. Conversely, phase difference detection pixel 80C has higher sensitivity to light with a negative angle of incidence. Furthermore, the pixel aperture of phase difference detection pixel 80B is blocked from the center to the left side of the aperture. Therefore, phase difference detection pixel 80B has relatively low sensitivity. Additionally, the negative angle of incidence for phase difference detection pixel 80B to achieve peak sensitivity is larger than that for phase difference detection pixel 80C to achieve peak sensitivity.

[0143] Phase difference detection pixel 80F has higher sensitivity to light with negative incident angles. Conversely, phase difference detection pixel 80D has higher sensitivity to light with positive incident angles. Furthermore, the pixel aperture of phase difference detection pixel 80E is blocked from the center to the right side of the aperture. Therefore, phase difference detection pixel 80E has relatively low sensitivity. Additionally, the positive incident angle at which phase difference detection pixel 80E achieves peak sensitivity is larger than that of phase difference detection pixel 80D.

[0144] Phase difference information for image plane phase difference AF is calculated based on the difference in signal levels of multiple phase difference detection pixels 80. The range of angles at which each phase difference detection pixel 80 has peak sensitivity is widened, and therefore phase difference can be detected for a wide range of main beam light.

[0145] Changes in pixel array

[0146] Figure 20An example arrangement of the phase difference detection pixels 40 in a solid-state imaging device applying the present invention is shown. It should be noted that this figure extracts a pixel range of 6×6=36 pixels in the solid-state imaging device, and R, G, and B in this figure represent the colors of each pixel in the color filter layer 32. It should be noted that the color arrangement of the color filter layer 32 in the normal pixels 30 other than the phase difference detection pixels 40 is based on a Bayer array in which 4 (=2×2) pixels constitute a unit. It should be noted that the arrangement of the color filters R, G, and B within the unit is not limited to the arrangement shown in this figure and can be changed. Alternatively, the color configuration of each pixel in the color filter layer 32 is not limited to R, G, and B and can be changed. This also applies to the following figures.

[0147] In the arrangement example of this figure, the phase difference detection pixels 40 are arranged in the entire third row counting from the top of this figure. The phase difference detection pixels 40 of the same color (in this case, G) are covered by a common type on-chip lens 41 in groups of two pixels each.

[0148] By setting all pixels in this row as phase difference detection pixels 40, both high-precision, high-sensitivity phase difference detection and high-resolution images generated by the Bayer array can be achieved.

[0149] Figure 21 It shows that Figure 20 The phase difference detection pixel 40 in the arrangement example is offset by one column in the arrangement example. In a solid-state imaging device, such as in Figure 20 Layout examples and Figure 21 In the arrangement example, it is advantageous to mix the phase difference detection pixels 40, which are phase-shifted by half a phase. Figure 22 By targeting Figure 20 The arrangement example is obtained by further arranging the phase difference detection pixel 40 in all pixels of the fifth row counting from the top of this figure. Figure 22 An example arrangement of FD addition in a hypothetical 2×4 pixel array is shown. By employing an arrangement that adds the output signals of phase difference detection pixels with the same phase, corresponding to FD addition, both high-precision, high-sensitivity phase difference detection and high-resolution images generated by the Bayer array can be achieved.

[0150] Figure 23 An example arrangement is shown in which phase difference detection pixels 40 are arranged in 4 (=2×2) pixels located in the center of this figure, and phase difference detection pixels 40 of the same color (in this case, G) are covered by horizontally elongated common type on-plate lenses 41 in groups of two pixels each.

[0151] Figure 24 It shows that Figure 23 The phase difference detection pixel 40 in the arrangement example is offset by one column in the arrangement example. In a solid-state imaging device, such as in Figure 23 Layout examples and Figure 24 In the arrangement example, it is advantageous to mix the phase difference detection pixels 40, which are phase-shifted by half a phase. Figure 25 An example arrangement is shown in which phase difference detection pixels 40 are arranged in 4 (=2×2) pixels located in the center of this figure, and phase difference detection pixels 40 of the same color (in this case, G) are covered by vertically elongated common type on-plate lenses 41 in groups of two pixels each.

[0152] Figure 26 An example arrangement is shown in which phase difference detection pixels 40 are arranged in 4 (=2×2) pixels located in the center of the figure, and the four phase difference detection pixels 40 of the same color (in this case, G) are covered by a common type on-chip lens 41.

[0153] Figure 27 An example of such an arrangement is shown, in which phase difference detection pixels 40 based on the Bayer array are arranged in 4 (=2×2) pixels located in the center of this figure, and the phase difference detection pixels 40 of different colors (in this case, R and G, G and B) are covered by a horizontally elongated common type on-chip lens 41 in groups of two pixels each.

[0154] Figure 28 It shows that Figure 27 In the arrangement example, the phase difference detection pixels 40 are offset by one column. Specifically, in this arrangement example, the phase difference detection pixels 40 of different colors (in this case, G and R, B and G) are covered by a horizontally elongated common-type on-chip lens 41 in groups of two pixels each. In a solid-state imaging device, such as in Figure 27 Layout examples and Figure 28 In the arrangement example, it is advantageous to mix the phase difference detection pixels 40, which are phase-shifted by half a phase. Figure 29 An example of such an arrangement is shown, in which the color arrangement is based on the phase difference detection pixels 40 of the Bayer array, which are arranged in 8 (=2×4) pixels located in the center of this figure. The phase difference detection pixels 40 of different colors (in this case, G and B, R and G) are covered by a horizontally elongated common type on-chip lens 41 in a group of two pixels each, and it is assumed that there is FD addition in 2×4 pixels.

[0155] Figure 30An example of such an arrangement is shown, in which phase difference detection pixels 40 based on the Bayer array are arranged in 4 (=2×2) pixels located in the center of this figure, and the phase difference detection pixels 40 of different colors (in this case, R and G, G and B) are covered by vertically elongated common type on-chip lenses 41 in groups of two pixels each.

[0156] Figure 31 An example of such an arrangement is shown, in which phase difference detection pixels 40 based on the Bayer array are arranged in all pixels of the third and fourth rows counting from the top of this figure, and phase difference detection pixels 40 of different colors (in this case, R and G, G and B) are covered by horizontally elongated common type on-chip lenses 41 in groups of two pixels each.

[0157] Figure 32 It shows that Figure 31 The example arrangement shows a phase difference detection pixel 40 with its phase shifted by half a phase. In a solid-state camera device, such as in... Figure 31 Layout examples and Figure 32 In the arrangement example, it is advantageous to mix the phase difference detection pixels 40, which are phase-shifted by half a phase. Figure 33 An example of such an arrangement is shown, in which the color arrangement is based on the phase difference detection pixels 40 of the Bayer array, which are arranged in all the pixels from the second to the fifth row from the top of this figure. The phase difference detection pixels 40 of different colors (in this case, G and B, R and G) are covered by a horizontally elongated common type on-chip lens 41 in a group of two pixels each, and it is assumed that there is FD addition in 2×4 pixels.

[0158] Figure 34 An example of the arrangement of phase difference detection pixels 40 in a solid-state imaging device to which the present invention is applied is shown. Figure 34 16 (=4×4) pixels or 24 (=6×4) pixels of the solid-state imaging device were extracted and shown.

[0159] In the arrangement example of A in this figure, regarding the phase difference detection pixel 40, two pixels with selective sensitivity to G (covered by the color filter of G) are covered by a common on-chip lens 41, and multiple sets of such pairs of pixels are arranged in a checkerboard pattern in a manner that they are not adjacent to each other in each row. Regarding the normal pixel 30, two pixels with selective sensitivity to the same color (covered by the color filter of the same color) are arranged to be adjacent to each other in the row direction.

[0160] In the arrangement example of B in this figure, regarding the phase difference detection pixel 40, two pixels with selective sensitivity to G are covered by a common on-chip lens 41, and multiple sets of such pairs of pixels are arranged in a checkerboard pattern in a manner that they are not adjacent to each other in each row. Regarding the normal pixels 30, they are arranged in the order of R and B in the Nth row and in the order of B and R in the N+1th row.

[0161] In the arrangement example of C in this figure, regarding the phase difference detection pixel 40, two pixels with selective sensitivity to G are covered by a common on-chip lens 41, and multiple sets of such pairs of pixels are arranged in a checkerboard pattern in a manner that they are not adjacent to each other in each row. Regarding the normal pixels 30, they are arranged in the order of R and B in each row.

[0162] In the arrangement example of D in this figure, regarding the phase difference detection pixel 40, two pixels with selective sensitivity to G are covered by a shared on-chip lens 41, and multiple sets of such pairs of pixels are arranged in a checkerboard pattern in a manner where they are not adjacent to each other in each row. Regarding the normal pixel 30, R and B are present in all rows and columns. The two sides of a pair of phase difference detection pixels 40 are always arranged with the same color.

[0163] Figure 35 An example of the arrangement of phase difference detection pixels 40 in a solid-state imaging device to which the present invention is applied is shown. Figure 35 Sixteen (4×4) pixels of the solid-state imaging device are extracted and shown. In the arrangement examples shown in Figures A to D, phase difference detection pixels 40 with selective sensitivity to G are arranged continuously in a horizontal (row) strip pattern, and the phase of the phase difference detection pixels 40 is common in all rows.

[0164] In the case of A in this figure, regarding normal pixels 30, as observed along the row direction, normal pixels 30 are arranged in such a way that the arrangement of R and B in each row is the same and the same colors are not continuous.

[0165] In case B of this figure, regarding normal pixels 30, as observed along the row direction, normal pixels 30 are arranged so that the same color can be continuous.

[0166] In case C of this figure, regarding normal pixels 30, as observed along the row direction, normal pixels 30 are arranged in such a way that the arrangement of R and B in each row is different and the same color is not continuous.

[0167] In case D of this figure, the arrangement of normal pixels is offset by one column from the arrangement example shown in B of this figure.

[0168] Figure 36 An example of the arrangement of phase difference detection pixels 40 in a solid-state imaging device to which the present invention is applied is shown. Figure 36 Sixteen (=4×4) pixels of the solid-state imaging device are extracted and shown. In the arrangement examples shown in Figures A to D, the phase difference detection pixels 40, which have selective sensitivity to G, are arranged continuously in a horizontal (row) strip pattern, and are arranged such that the phase of the phase difference detection pixels 40 is offset by half a phase in each row.

[0169] In the case of A in this figure, regarding normal pixels 30, as observed along the row direction, normal pixels 30 are arranged in such a way that the arrangement of R and B in each row is the same and the same color is discontinuous.

[0170] In case B of this figure, regarding normal pixels 30, as observed along the row direction, normal pixels 30 are arranged so that the same color can be continuous.

[0171] In case C of this figure, regarding normal pixels 30, as observed along the row direction, normal pixels 30 are arranged in a way that the arrangement of R and B in each row is different and the same color is discontinuous.

[0172] In case D of this figure, the arrangement of normal pixels is offset by one column from the arrangement example shown in B of this figure.

[0173] Figure 37 An example of the arrangement of phase difference detection pixels 40 in a solid-state imaging device to which the present invention is applied is shown. Figure 37 Sixteen (4×4) pixels of the solid-state imaging device are extracted and shown. It should be noted that in the arrangement example in this figure, the color of the color filter layer of the phase difference detection pixel 40 is set to R or B.

[0174] That is, in the arrangement example shown in A of this figure, the phase difference detection pixels 40, which have selective sensitivity to R, are arranged continuously in a horizontal stripe pattern, and are arranged such that the phase of the phase difference detection pixels 40 is offset by half a phase in each row. Regarding the normal pixels 30, as observed along the row direction, the normal pixels 30 are arranged such that the arrangement of G and B in each row is different, and the same color is discontinuous.

[0175] In the arrangement example shown in B of this figure, the phase difference detection pixels 40, which have selective sensitivity to B, are arranged continuously in a horizontal stripe pattern, and are arranged such that the phase of the phase difference detection pixels 40 is offset by half a phase in each row. Regarding the normal pixels 30, as observed along the row direction, the normal pixels 30 are arranged such that the arrangement of R and G in each row is different, and the same color is discontinuous.

[0176] As shown in this figure, the color of the color filter layer covering the phase difference detection pixel 40 is not limited to G, and can be R or B. In this case, the sensitivity is approximately half that of the case where the color of the color filter covering the phase difference detection pixel 40 is set to G. However, the area of ​​the common on-chip lens 41 covering the phase difference detection pixel 40 is twice the area of ​​the discrete on-chip lens 31 covering the normal pixel 30. Therefore, the outputs of the phase difference detection pixel 40 and the normal pixel 30 are equal, and the sensitivity ratio becomes favorable.

[0177] Figure 38 yes Figure 36 Figure A shows a variation of the construction of the phase difference detection pixel 40 in the arrangement example. Figure A shows a construction obtained by unevenly (1:3) dividing the region of the phase difference detection pixel 40 corresponding to two pixels into two regions. Figure B shows a construction obtained by equally dividing the region of the phase difference detection pixel 40 corresponding to two pixels into three regions for multiple views. As shown in this figure, if the region of the phase difference detection pixel 40 corresponding to two pixels is appropriately divided into multiple regions with a ratio different from 1:1, then the oblique incidence characteristics can be improved. It should be noted that... Figure 38 The variant shown can be further modified, and the color of the color filter covering the phase difference detection pixel 40 can be set as follows: Figure 37 The R or B shown.

[0178] Figure 39 An example of the arrangement of phase difference detection pixels 40 in a solid-state imaging device to which the present invention is applied is shown. Figure 39 Sixteen (4×4) pixels of the solid-state imaging device are extracted and shown. In the arrangement examples shown in Figures A to D, four pixels with selective sensitivity to G, related to the phase difference detection pixel 40, are covered by a common on-chip lens 41. Regarding the normal pixels 30, they have selective sensitivity to either R or B, and each of these normal pixels 30 is covered by a discrete on-chip lens 31.

[0179] In case A of this figure, in the 2×2 pixel area other than the phase difference detection pixel 40 of G, only the normal pixel 30 of R or only the normal pixel 30 of B is arranged.

[0180] In the case of B in this figure, in the 2×2 pixel area excluding the phase difference detection pixel 40 of G, the normal pixels 30 of the same color of R or B are arranged adjacent to each other in the column direction. It should be noted that the arrangement of the normal pixels 30 of R and B is different in each 2×2 pixel area.

[0181] In the case of C in this figure, in the 2×2 pixel area excluding the phase difference detection pixel 40 of G, normal pixels 30 of the same color of R or B are arranged adjacent to each other in the column direction. It should be noted that the arrangement of normal pixels 30 of R and B is the same in each 2×2 pixel area.

[0182] In the case of D in this figure, in the 2×2 pixel area excluding the phase difference detection pixel 40 of G, normal pixels 30 of the same color of R or B are arranged adjacent to each other in the diagonal direction. It should be noted that the arrangement of normal pixels 30 of R and B is the same in each 2×2 pixel area.

[0183] Figure 40 An example of the arrangement of a variant of the phase difference detection pixel 40 in a solid-state imaging device to which the present invention is applied is shown. Figure 40 Eighteen (6 × 3) pixels of the solid-state imaging device are extracted and shown. In this variant, the paired phase difference detection pixels are formed to be larger in size than normal pixels. The paired phase difference detection pixels are arranged in a checkerboard pattern.

[0184] In the case of A in this figure, Gl and Gr, which have selective sensitivity to G, are paired phase difference detection pixels. Gl and Gr are formed to be larger in size than the normal pixels that have selective sensitivity to R or B.

[0185] In the case of B in this figure, Rl and Rr, which are selectively sensitive to R, and Bl and Br, which are selectively sensitive to B, are paired phase difference detection pixels. Rl and Rr or Bl and Br are formed to be larger in size than the normal pixels that are selectively sensitive to G.

[0186] Question regarding the use of the output of the phase difference detection pixel as a color signal

[0187] Incidentally, for example, as in Figure 20 In the arrangement examples shown, for a specific color (in Figure 20In the case where both the normal pixel 30 and the phase difference detection pixel 40 are arranged on the solid-state imaging device, the color signal corresponding to the position of the phase difference detection pixel 40 can be compensated by using the output of the normal pixel 30 of the same color located near the phase difference detection pixel 40. Therefore, the output of the phase difference detection pixel 40 only needs to be used for calculating the phase difference signal.

[0188] However, for example, as in Figure 34 In the arrangement examples shown, in a specific color (in) Figure 34 In the case where all pixels of G are set as phase difference detection pixels 40, there are no normal pixels 30 of the same color. Therefore, it is necessary for the output of the phase difference detection pixels 40 to be used not only for calculating the phase detection signal but also as a color signal.

[0189] It should be noted that when the output of the phase difference detection pixel 40 is also used as a color signal, colors different from that specific color (in) Figure 34 In this case, the shape of the normal pixel 30 of R and B is different from that of the on-chip lens, and therefore the oblique incidence characteristics differ, leading to the following problems. (Refer to...) Figure 41 To illustrate this issue.

[0190] Figure 41 Figure A illustrates a case where a pair of phase difference detection pixels, consisting of two pixels of the same color, share a common on-chip lens 41. In this figure, one of the pair of phase difference detection pixels is referred to as phase difference detection pixel 40l (left) and the other as phase difference detection pixel 40r (right).

[0191] Figure 41 Figure B shows the oblique incidence characteristics of phase difference detection pixels 40l and 40r at CRA = 0 degrees. In this figure, the horizontal axis represents the incident angle, and the vertical axis represents the sensitivity. Furthermore, in Figure 41 In B, curve l represents the oblique incidence characteristics of phase difference detection pixel 40l, curve r represents the oblique incidence characteristics of phase difference detection pixel 40r, and curve n represents the oblique incidence characteristics of normal pixel 30 whose color is different from that of phase difference detection pixel 40. Curve l+r is obtained by adding curve l and curve r, and curve 2n is obtained by doubling the value of curve n.

[0192] If the curve l+r, representing the sum of the phase difference detection pixels 40l and 40r, coincides with the curve 2n, representing double the sensitivity of the normal pixel 30, then the oblique incidence characteristics of the phase difference detection pixels 40l and 40r will be consistent with those of the normal pixel 30. However, if we consider... Figure 41 As can be clearly seen in B, the two curves mentioned above are inconsistent with each other.

[0193] Regarding the solid-state imaging device whose oblique incidence characteristics of phase difference detection pixels 40l and 40r differ from those of normal pixel 30, as described above, no problem occurs when this solid-state imaging device is assembled in a fixed-focus camera used in smartphones or similar devices. However, when this solid-state imaging device is assembled in a camera device (such as an SLR camera or a compact camera) with variable stop F-number and focal length f, the following inconvenience occurs: the sensitivity ratio of phase difference detection pixels 40l and 40r to normal pixel 30 changes, and white balance (WB) is disrupted.

[0194] Therefore, in the following text, a construction example of a phase difference detection pixel that can suppress the occurrence of the above-mentioned inconvenience and has the same oblique incidence characteristics as normal pixels will be described (a fourth construction example of a phase difference detection pixel in a solid-state imaging device using the present invention).

[0195] Fourth Construction Example of Phase Difference Detection Pixel in Solid-State Imaging Device of the Present Invention

[0196] Figure 42 Figure A illustrates a fourth configuration example of a phase difference detection pixel. This phase difference detection pixel 100 is configured to have a size corresponding to the two pixels of the normal pixel 30. Regarding the photoelectric conversion unit, the size corresponding to the two pixels of the normal pixel 30 is horizontally divided into four regions with a ratio of approximately 0.5:0.5:0.5:0.5, and the charge generated in each of these four regions can be output individually. In the following text, the phase difference detection pixel 100, whose size is divided into four regions corresponding to the two pixels of the normal pixel 30, will be referred to sequentially from the left side of this figure as phase difference detection pixel 100ll, phase difference detection pixel 100l, phase difference detection pixel 100r, and phase difference detection pixel 100rr. Phase difference detection pixels 100ll to 100rr are covered by a common type on-chip lens. The colors of the color filter layers are common.

[0197] Figure 42 Figure B shows the oblique incidence characteristics of phase difference detection pixels 100ll, 100l, 100r, and 100rr at CRA = 0 degrees. In this figure, the horizontal axis represents the incident angle, and the vertical axis represents the sensitivity. Furthermore, in Figure 42In B, curve ll represents the oblique incidence characteristics of phase difference detection pixel 100ll, curve l represents the oblique incidence characteristics of phase difference detection pixel 100l, curve r represents the oblique incidence characteristics of phase difference detection pixel 100r, curve rr represents the oblique incidence characteristics of phase difference detection pixel 100rr, and curve n represents the oblique incidence characteristics of normal pixel 30 whose color is different from that of phase difference detection pixel 100. Curve l+r is obtained by adding curve l and curve r, and curve 2n is obtained by doubling the value of curve n.

[0198] As clearly visible in Figure B, curve l+r, representing the sum of the phase difference detection pixels 100l and 100r, roughly coincides with curve 2n, representing double the sensitivity of the normal pixel 30. Therefore, when using the output of the phase difference detection pixel 100 as a color signal, the outputs of phase difference detection pixels 100l and 100r can be added together for use. The outputs of phase difference detection pixels 100ll and 100rr are used for calculating the phase difference detection signal.

[0199] In a camera device equipped with a solid-state imaging device including a phase difference detection pixel 100 and a normal pixel 30, inconvenience caused by the inconsistency of the oblique incidence characteristics of the two types of pixels can be suppressed.

[0200] Figure 43 This is an example of the arrangement of phase difference detection pixels 100 in a solid-state imaging device using the present invention. Figure 43 The region corresponding to 24 (=4×6) pixels of normal pixel 30 from the solid-state imaging device is extracted and shown. In the arrangement example of this figure, the color of the color filter layer of the phase difference detection pixel 100 is set to G. In each row, all pixels are set to phase difference detection pixel 100. The rows of phase difference detection pixels 100 are arranged such that the phase of the phase difference detection pixels 100 is alternately shifted by half a phase.

[0201] Incidentally, if the outputs of phase difference detection pixels 100ll and 100rr are used only for calculating the phase difference detection signal and not as a color signal, then in lenses with a wider oblique incidence range (lenses with small F-numbers), some signals will be continuously collected by phase difference detection pixels 100ll and 100rr, resulting in sensitivity loss. Therefore, the outputs of phase difference detection pixels 100ll and 100rr can also be used as color signals.

[0202] Specifically, the phase difference is calculated by using the output of phase difference detection pixel 1000 and the output of phase difference detection pixels 1001 to 1006 of the same color surrounding it. Figure 43 The color signal 100G of the G component corresponding to the position of the phase difference detection pixel 1000 shown in A.

[0203] 100G = 100S(100B / 100A)

[0204] Here, 100S, 100A, and 100B are respectively as follows.

[0205] 100S=1000ll+1000l+1000r+1000rr

[0206] 100A=(z0(1000ll+1000l+1000r+1000rr)+z1(1001ll+1001l+1001r+1001rr)+z2(1002ll+1002l+1002r+1002rr)+z3(1003ll+1003l+1003r+1 003rr)+z4(1004ll+1004l+1004r+1004rr)+z5(1005ll+1005l+1005r+1005rr)+z6(1006ll+1006l+1006r+1006rr)) / (z0+z1+z2+z3+z4+z5+z6)

[0207] 100B=(z0(1000l+1000r)+z1(1001l+1001r)+z2(1002l+1002r)+z3(1003l+1003r)+ z4(1004l+1004r)+z5(1005l+1005r)+z6(1006l+1006r)) / (z0+z1+z2+z3+z4+z5+z6)

[0208] It is important to note that z0 to z6 in 100A and 100B are predetermined coefficients. For example, z0 to z6 can all be 1. Weighting can be applied in a manner that depends on the spatial distance from the center pixel. Further subdivision coefficients can be set for the four outputs ll, l, r, and rr of the phase difference detection pixel 100. These further subdivision coefficients only need to consider the balance between resolution and signal-to-noise ratio (SN).

[0209] While ensuring that the oblique incidence characteristics are consistent with those of normal pixels, the color signal 100G calculated in this way can reduce the noise level. Therefore, the image's signal-to-noise ratio (SN ratio) can be improved.

[0210] Figure 44This is another example of the arrangement of the phase difference detection pixel 100 in the solid-state imaging device of the present invention. Figure 44 The region corresponding to 18 (=6×3) pixels of normal pixel 30 from the solid-state imaging device is extracted and shown. In the arrangement example of this figure, the color of the color filter layer of the phase difference detection pixel 100 is set to B or R. The two normal pixels 30 of G, the phase difference detection pixels 100ll to 100rr of B, and the phase difference detection pixels 100ll to 100rr of R are arranged according to a Bayer array.

[0211] Figure 45 This is yet another example of the arrangement of the phase difference detection pixel 100 in the solid-state imaging device of the present invention. Figure 45 The region corresponding to 16 (=4×4) pixels of normal pixel 30 from the solid-state imaging device is extracted and shown. In the arrangement example of this figure, the color of the color filter layer of the phase difference detection pixel 100 is set to B or R. In each row, all pixels are set to phase difference detection pixel 100. The rows of phase difference detection pixels 100 are arranged such that the phase of the phase difference detection pixels 100 is alternately offset by half a phase. In each row of phase difference detection pixels 100, phase difference detection pixels 100ll to 100rr of B and phase difference detection pixels 100ll to 100rr of R are arranged alternately.

[0212] It should be noted that the color and arrangement of the phase difference detection pixels 100 in the solid-state imaging device are not limited to the arrangement examples described above.

[0213] Fifth construction example of phase difference detection pixel in solid-state imaging device using the present invention

[0214] Figure 46 Figure A illustrates a fifth construction example of a phase difference detection pixel. This phase difference detection pixel 110 is configured to have a size corresponding to the two pixels of the normal pixel 30. Regarding the photoelectric conversion unit, the size corresponding to the two pixels of the normal pixel 30 is divided horizontally into three regions with a ratio of approximately 0.5:1:0.5, and the charge generated in each of these three regions can be output individually. In the following text, the phase difference detection pixel 110 obtained by dividing the size corresponding to the two pixels of the normal pixel 30 into three regions will be referred to sequentially from the left side of this figure as phase difference detection pixel 110l, phase difference detection pixel 110c, and phase difference detection pixel 110r. Phase difference detection pixels 110l, 110c, and 110r are covered by a common type on-chip lens. The colors of the color filter layers are common.

[0215] Figure 46Figure B illustrates the oblique incidence characteristics of phase difference detection pixels 110l, 110c, and 110r at CRA = 0 degrees. In this figure, the horizontal axis represents the incident angle, and the vertical axis represents the sensitivity. Furthermore, in Figure 46 In curve B, curve l represents the oblique incidence characteristics of phase difference detection pixel 110l, curve c represents the oblique incidence characteristics of phase difference detection pixel 110c, curve r represents the oblique incidence characteristics of phase difference detection pixel 110r, and curve n represents the oblique incidence characteristics of normal pixel 30 whose color is different from that of phase difference detection pixel 110. Curve 2n is obtained by doubling the value of curve n.

[0216] As clearly visible in Figure B, curve c, representing the sensitivity of phase difference detection pixel 110c, roughly coincides with curve 2n, which represents double the sensitivity of normal pixel 30. Therefore, when using the output of phase difference detection pixel 110 as the color signal, the output of phase difference detection pixel 110c is used. The outputs of phase difference detection pixels 110l and 110r are used for calculating the phase difference detection signal.

[0217] In a camera device equipped with a solid-state imaging device including a phase difference detection pixel 110 and a normal pixel 30, inconvenience caused by the inconsistency of the oblique incidence characteristics of the two types of pixels can be suppressed.

[0218] Figure 47 This is an example of the arrangement of phase difference detection pixels 110 in a solid-state imaging device using the present invention. Figure 47 The region corresponding to 24 (=4×6) pixels of normal pixel 30 from the solid-state imaging device is extracted and shown. In the arrangement example of this figure, the color of the color filter layer of the phase difference detection pixel 110 is set to G. In each row, all pixels are set to phase difference detection pixel 110. The rows of phase difference detection pixels 110 are arranged such that the phase of the phase difference detection pixels 110 is alternately shifted by half a phase.

[0219] Incidentally, if the outputs of phase difference detection pixels 110l and 110r are used only for calculating the phase difference detection signal and not as a color signal, then in lenses with a wider oblique incidence range (lenses with small F-numbers), some signals will be continuously collected by phase difference detection pixels 110l and 110r, resulting in sensitivity loss. Therefore, the outputs of phase difference detection pixels 110l and 110r can also be used as color signals.

[0220] Specifically, the phase difference is calculated by using the output of phase difference detection pixel 1100 and the output of phase difference detection pixels 1101 to 1106 of the same color surrounding it. Figure 47The color signal 100G of the G component corresponding to the position of the phase difference detection pixel 1100 shown in A.

[0221] 110G = 110S(110B / 110A)

[0222] Here, 110S, 110A, and 110B are respectively as follows.

[0223] 110S = 1100l + 1100l + 1100r

[0224] 110A=(z0(1100l+1100c+1100r)+z1(1101l+1101c+1101r)+z2(1102l+1102c+1102r)+z3(1103l+1103c+1103 r)+z4(1104l+1104c+1104r)+z5(1105l+1105c+1105r)+z6(1106l+1106c+1106r)) / (z0+z1+z2+z3+z4+z5+z6)

[0225] 110B=(z0(1100l+1100r)+z1(1101l+1101r)+z2(1102l+1102r)+z3(1103l+1103r)+ z4(1104l+1104r)+z5(1105l+1105r)+z6(1106l+1106r)) / (z0+z1+z2+z3+z4+z5+z6)

[0226] It is important to note that z0 to z6 in 110A and 110B are predetermined coefficients. For example, z0 to z6 can all be 1. Weighting can be performed based on the spatial distance from the center pixel. Further subdivision coefficients can be set for the three outputs l, c, and r of the phase difference detection pixel 110. These further subdivision coefficients only need to consider the balance between resolution and the SN ratio when setting them.

[0227] While ensuring that the oblique incidence characteristics are consistent with those of normal pixels, the color signal 100G calculated in this way can reduce the noise level. Therefore, the image's signal-to-noise ratio (SN ratio) can be improved.

[0228] It should be noted that the color and arrangement of the phase difference detection pixels 110 in the solid-state imaging device are not limited to the color and arrangement examples described above. For example, they can be applied to... Figures 43 to 45 The colors and layout are similar.

[0229] A sixth construction example of a phase difference detection pixel in a solid-state imaging device using the present invention.

[0230] Figure 48A sixth construction example and arrangement example of a phase difference detection pixel in a solid-state imaging device are shown. The phase difference detection pixel 120 is configured to have a size four times that of a normal pixel 30. Regarding the photoelectric conversion unit, the size corresponding to the four pixels of the normal pixel 30 is divided into four regions of approximately 0.5:0.5:0.5:0.5 in both the vertical and horizontal directions, and the charge generated in each of these regions can be output individually. The phase difference detection pixel 120 is covered by a common on-chip lens. The color of the color filter layer in each segmented region is common. Furthermore, in the arrangement example shown in this figure, the color of the color filter layer for the phase difference detection pixel 120 is set to G. In a solid-state imaging device, the phase difference detection pixel 120 of G and the normal pixel 30 of B or R are arranged according to a Bayer array.

[0231] It should be noted that, although the illustration is omitted, the oblique incidence characteristics of the phase difference detection pixel 120 are similar to... Figure 42 The oblique incidence characteristic of B. Therefore, when using the output of the phase difference detection pixel 120 as the color signal, the outputs of the four blocks located at the center of the 16 segmented blocks of the phase difference detection pixel 120 are used. The outputs of the other blocks are only used for the calculation of the phase difference detection signal and are not used as the color signal.

[0232] Figure 49 An example arrangement of phase difference detection pixels 120 in a solid-state imaging device is shown. In this arrangement example, the color of the color filter layer is set to B or R with respect to the phase difference detection pixels 120. In the solid-state imaging device, the B or R phase difference detection pixels 120 and the normal pixels 30 are arranged according to a Bayer array.

[0233] It should be noted that the color and arrangement of the phase difference detection pixels 120 in the solid-state imaging device are not limited to the color and arrangement in the arrangement example above.

[0234] In a camera device equipped with a solid-state imaging device including a phase difference detection pixel 120 and a normal pixel 30, inconvenience caused by the inconsistency of the oblique incidence characteristics of the two types of pixels can be suppressed.

[0235] Seventh Construction Example of Phase Difference Detection Pixel in Solid-State Imaging Device Using the Present Invention

[0236] Figure 50A seventh construction example and arrangement example of a phase difference detection pixel in a solid-state imaging device are shown. The phase difference detection pixel 130 is configured to have a size four times that of a normal pixel 30. Regarding the photoelectric conversion unit, the size corresponding to the four pixels of the normal pixel 30 is divided into three regions of approximately 0.5:1:0.5 in both the vertical and horizontal directions, and the charge generated in each of these regions can be output individually. The phase difference detection pixel 130 is covered by a common on-chip lens. The color of the color filter layer in each segmented region is common. Furthermore, in the arrangement example shown, the color of the color filter layer for the phase difference detection pixel 130 is set to G. In a solid-state imaging device, the phase difference detection pixel 130 of G and the normal pixel 30 of B or R are arranged according to a Bayer array.

[0237] It should be noted that, although the illustration is omitted, the oblique incidence characteristics of the phase difference detection pixel 130 are similar to... Figure 46 The oblique incidence characteristic of B. Therefore, when using the output of the phase difference detection pixel 130 as the color signal, the output of one block of the phase difference detection pixel 130 located at the center of the nine segmented blocks is used. The outputs of the other blocks are only used for the calculation of the phase difference detection signal and are not used as the color signal.

[0238] Figure 51 An example arrangement of phase difference detection pixels 130 in a solid-state imaging device is shown. In this arrangement example, the color of the color filter layer is set to B or R with respect to the phase difference detection pixels 130. In the solid-state imaging device, the B or R phase difference detection pixels 130 and the normal pixels 30 are arranged according to a Bayer array.

[0239] It should be noted that the color and arrangement of the phase difference detection pixels 130 in the solid-state imaging device are not limited to the color and arrangement in the arrangement example above.

[0240] In a camera device equipped with a solid-state imaging device including a phase difference detection pixel 130 and a normal pixel 30, inconvenience caused by the inconsistency of the oblique incidence characteristics of the two types of pixels can be suppressed.

[0241] Examples of use of the solid-state imaging device of the present invention

[0242] Figure 52 The figure shows an example of using the solid-state camera device described above.

[0243] Solid-state imaging devices can be used in various situations to sense light such as visible light, infrared light, ultraviolet light, and X-rays.

[0244] • Devices used to photograph images for viewing, such as digital cameras and portable devices equipped with cameras.

[0245] • Devices used for transportation purposes, such as vehicle-mounted cameras that take pictures of the front, rear, surroundings, and interior of a car for purposes such as safe driving (e.g., automatic parking) and driver status recognition; surveillance cameras that monitor moving vehicles and roads; and distance measuring sensors that measure the distance between vehicles.

[0246] • Devices used in household appliances such as TVs, refrigerators, and air conditioners that photograph the user's posture and perform device operations based on that posture.

[0247] • Devices used for healthcare purposes, such as endoscopes and devices that take pictures of blood vessels by receiving infrared light.

[0248] • Devices used for security purposes, such as surveillance cameras used for crime prevention and cameras used for identity authentication.

[0249] • Devices used for beauty and skin care purposes, such as skin measurement devices for photographing the skin and microscopes for photographing the scalp.

[0250] • Devices used for sports purposes, such as action cameras and wearable cameras for sports purposes.

[0251] • Devices used for agricultural purposes, such as cameras used to monitor the condition of fields and crops.

[0252] The embodiments of the present invention are not limited to the above-described embodiments, and various changes can be made without departing from the spirit of the present invention.

[0253] The present invention can also be implemented in the following ways.

[0254] (1) A solid-state imaging device, wherein normal pixels and phase difference detection pixels are arranged in a mixed manner, the normal pixels generating pixel signals of an image, and the phase difference detection pixels generating pixel signals to be used in calculating pixel signals for controlling the image plane phase difference AF function.

[0255] In the phase difference detection pixels, a shared on-chip lens is formed in such a way that it corresponds to each group of multiple adjacent phase difference detection pixels. The shared on-chip lens is used to focus the incident light onto the photoelectric conversion unit, which generates the pixel signal to be used when calculating the phase difference signal.

[0256] (2) The solid-state imaging device according to (1), wherein,

[0257] In each of the normal pixels, a discrete on-chip lens is formed in a manner corresponding to each of the normal pixels. The discrete on-chip lens is used to focus incident light onto the photoelectric conversion unit that generates the pixel signal of the image.

[0258] (3) The solid-state imaging device according to (1) or (2),

[0259] An inter-pixel light-blocking structure is provided between the normal pixels and between the normal pixels and the phase difference detection pixel.

[0260] (4) The solid-state imaging device according to any one of (1) to (3), wherein,

[0261] A pixel-to-pixel light-blocking structure is also provided between the phase difference detection pixels.

[0262] (5) The solid-state imaging device according to any one of (1) to (4), wherein,

[0263] The phase difference detection pixel includes an opening-blocking structure that restricts the opening of the photoelectric conversion unit.

[0264] (6) The solid-state imaging device according to any one of (1) to (5), wherein,

[0265] In the phase difference detection pixels, a common on-chip lens is formed in such a way that it corresponds to each group of two adjacent pixels.

[0266] (7) The solid-state imaging device according to any one of (1) to (5), wherein,

[0267] In the phase difference detection pixels, two shared on-chip lenses are formed in such a way that they correspond to each group of three adjacent pixels.

[0268] (8) The solid-state imaging device according to any one of (1) to (7), wherein,

[0269] The boundary between the discrete on-chip lens formed in the normal pixel and the shared on-chip lens formed in the phase difference detection pixel is approximately rectangular or approximately hexagonal.

[0270] (9) The solid-state imaging device according to any one of (1) to (6), wherein,

[0271] A pseudo-focusing element structure is formed between the discrete on-chip lens formed in the normal pixels and the shared on-chip lens formed in the plurality of adjacent phase difference detection pixels.

[0272] (10) The solid-state imaging device according to (9), wherein,

[0273] The pseudo-focusing element structure is formed in an asymmetrical manner relative to the plurality of phase difference detection pixels that share the common type on-chip lens.

[0274] (11) The solid-state imaging device according to any one of (1) to (10), wherein,

[0275] The plurality of phase difference detection pixels sharing the common type on-chip lens are arranged in a checkerboard pattern.

[0276] (12) The solid-state imaging device according to any one of (1) to (10), wherein,

[0277] The phase difference detection pixels are arranged in a straight line in at least one of the row and column directions.

[0278] (13) The solid-state imaging device according to any one of (1) to (10), wherein,

[0279] The phase difference detection pixels are arranged in a strip pattern in at least one of the row and column directions.

[0280] (14) The solid-state imaging device according to (13), wherein,

[0281] The phase difference detection pixels, arranged in strips adjacent to each other, have phases offset from each other.

[0282] (15) The solid-state imaging device according to any one of (1) to (14), wherein,

[0283] Color filters with selective sensitivity to three or more different wavelengths are set in a manner corresponding to each pixel, and

[0284] The plurality of phase difference detection pixels sharing the common type on-chip lens include the color filter having selective sensitivity to the same wavelength.

[0285] (16) The solid-state imaging device according to any one of (1) to (14), wherein,

[0286] Color filters with selective sensitivity to three or more different wavelengths are set in a manner corresponding to each pixel, and

[0287] The plurality of phase difference detection pixels sharing the common type on-chip lens include the color filter having selective sensitivity to different wavelengths.

[0288] (17) The solid-state imaging device according to any one of (1) to (16), wherein,

[0289] The pixel size of the phase difference detection pixel is larger than the pixel size of the normal pixel.

[0290] (18) The solid-state imaging device according to any one of (1) to (15), wherein,

[0291] All pixels, including those with color filters that have selective sensitivity to specific wavelengths from three or more different wavelengths, are the phase difference detection pixels, and

[0292] The output of the phase difference detection pixel is also used as the pixel signal of the image.

[0293] (19) The solid-state imaging device according to (18), wherein,

[0294] The size of the phase difference detection pixel sharing the common on-chip lens is an integer multiple of the size of the normal pixel.

[0295] The photoelectric conversion unit of the phase difference detection pixel is divided into multiple regions including a central region. From the central region, oblique incidence characteristics identical to those of the photoelectric conversion unit of the normal pixel can be obtained.

[0296] The output of the central region is also used as the pixel signal of the image.

[0297] (20) The solid-state imaging device according to (19), wherein,

[0298] The size of the phase difference detection pixel sharing the common on-chip lens is twice the size of the normal pixel.

[0299] The photoelectric conversion section of the phase difference detection pixel is divided into three regions with a ratio of approximately 0.5:1:0.5, and

[0300] The output of the region corresponding to 1 in the above ratio is also used as the pixel signal of the image.

[0301] (21) The solid-state imaging device according to (19), wherein,

[0302] The size of the phase difference detection pixel sharing the common on-chip lens is twice the size of the normal pixel.

[0303] The photoelectric conversion section of the phase difference detection pixel is divided into four regions with an approximate ratio of 0.5:0.5:0.5:0.5.

[0304] The sum of the outputs of the two regions corresponding to the 0.5 and 0.5 values ​​at the center of the above ratio is also used as the pixel signal of the image.

[0305] (22) An electronic device comprising a solid-state imaging device,

[0306] In the solid-state imaging device, normal pixels and phase difference detection pixels are arranged in a mixed manner. The normal pixels generate the pixel signals of the image, and the phase difference detection pixels generate the pixel signals to be used when calculating the phase difference signal used to control the image plane phase difference AF function.

[0307] In the phase difference detection pixels, a shared on-chip lens is formed in such a way that it corresponds to each group of multiple adjacent phase difference detection pixels. The shared on-chip lens is used to focus the incident light onto the photoelectric conversion unit, which generates the pixel signal to be used when calculating the phase difference signal.

[0308] List of reference numerals in the attached figures

[0309] 30 normal pixels

[0310] 31 Discrete on-plate lenses

[0311] 32 color filter layers

[0312] 33-pixel light-blocking structure

[0313] 34 Photoelectric Conversion Unit

[0314] 35 Signal wiring layer

[0315] 40 phase difference detection pixels

[0316] 41. Common type on-chip lens

[0317] 50 phase difference detection pixels

[0318] 51, 52 Common type on-plate lens

[0319] 53 Pseudo-concentrating element structure

[0320] 60, 80, 90, 100, 110, 120, 130 phase difference detection pixels

Claims

1. A solid-state imaging device, wherein normal pixels and phase difference detection pixels are arranged in a hybrid manner, the normal pixels generating pixel signals of an image, and the phase difference detection pixels generating pixel signals to be used in calculating a phase difference signal for controlling an image plane phase difference autofocus function. in, In the phase difference detection pixels, two shared on-chip lenses are formed in a manner corresponding to each group of three adjacent phase difference detection pixels. These shared on-chip lenses are used to focus incident light onto a photoelectric conversion unit, which generates the pixel signal used in calculating the phase difference signal. Half of the pixel aperture of the central phase difference detection pixel, one of the three phase difference detection pixels sharing the two common on-chip lenses, is covered and blocked from light. Among the normal pixels, discrete on-chip lenses are formed in a manner corresponding to each normal pixel. These discrete on-chip lenses are used to focus incident light onto the photoelectric conversion unit that generates the pixel signal of the image. In the plan view, the common type on-plate lens is formed as a hexagon, one common type on-plate lens is formed to be adjacent to six on-plate lenses, and there is no gap between the one common type on-plate lens and the six on-plate lenses.

2. The solid-state imaging device according to claim 1, wherein, An inter-pixel light-blocking structure is provided between the normal pixels and between the normal pixels and the phase difference detection pixel.

3. The solid-state imaging device according to claim 2, wherein, A pixel-to-pixel light-blocking structure is also provided between the phase difference detection pixels.

4. The solid-state imaging device according to claim 1, wherein, The phase difference detection pixel includes an opening light-blocking structure that restricts the opening of the photoelectric conversion section of the phase difference detection pixel.

5. The solid-state imaging device according to claim 1, wherein, A pseudo-focusing element structure is formed between the discrete on-chip lens formed in the normal pixels and the shared on-chip lens formed in the plurality of adjacent phase difference detection pixels.

6. The solid-state imaging device according to claim 5, wherein, The pseudo-focusing element structure is formed in an asymmetrical manner relative to the plurality of phase difference detection pixels that share the common type on-chip lens.

7. The solid-state imaging device according to claim 1, wherein, The plurality of phase difference detection pixels sharing the common type on-chip lens are arranged in a checkerboard pattern.

8. The solid-state imaging device according to claim 1, wherein, The phase difference detection pixels are arranged in a straight line in at least one of the row and column directions.

9. The solid-state imaging device according to claim 1, wherein, The phase difference detection pixels are arranged in a strip pattern in at least one of the row and column directions.

10. The solid-state imaging device according to claim 9, wherein, The phase difference detection pixels, arranged in a strip pattern in adjacent strips, have phases offset from each other.

11. The solid-state imaging device according to any one of claims 1 to 10, wherein, Color filters with selective sensitivity to three or more different wavelengths are set in a manner corresponding to each pixel, and The plurality of phase difference detection pixels sharing the common type on-chip lens include the color filter having selective sensitivity to the same wavelength.

12. The solid-state imaging device according to any one of claims 1 to 10, wherein, Color filters with selective sensitivity to three or more different wavelengths are set in a manner corresponding to each pixel, and The plurality of phase difference detection pixels sharing the common type on-chip lens include the color filter having selective sensitivity to different wavelengths.

13. The solid-state imaging device according to any one of claims 1 to 10, wherein, The pixel size of the phase difference detection pixel is larger than the pixel size of the normal pixel.

14. The solid-state imaging device according to any one of claims 1 to 10, wherein, All pixels, including those with color filters that have selective sensitivity to specific wavelengths from three or more different wavelengths, are the phase difference detection pixels, and The output of the phase difference detection pixel is also used as the pixel signal of the image.

15. The solid-state imaging device according to claim 14, wherein, The size of the phase difference detection pixel sharing the common on-chip lens is an integer multiple of the size of the normal pixel. The photoelectric conversion unit of the phase difference detection pixel is divided into multiple regions including a central region. The same oblique incidence characteristics as the photoelectric conversion unit of the normal pixel can be obtained from the central region. The output of the central region is also used as the pixel signal of the image.

16. The solid-state imaging device according to claim 15, wherein, The size of the phase difference detection pixel sharing the common on-chip lens is twice the size of the normal pixel. The photoelectric conversion section of the phase difference detection pixel is divided into three regions with a ratio of approximately 0.5:1:0.5, and The output of the region corresponding to 1 in the above ratio is also used as the pixel signal of the image.

17. The solid-state imaging device according to claim 15, wherein, The size of the phase difference detection pixel sharing the common on-chip lens is twice the size of the normal pixel. The photoelectric conversion section of the phase difference detection pixel is divided into four regions with an approximate ratio of 0.5:0.5:0.5:0.

5. The sum of the outputs of the two regions corresponding to the 0.5 and 0.5 values ​​at the center of the above ratio is also used as the pixel signal of the image.

18. An electronic device comprising a solid-state camera as claimed in any one of claims 1 to 17.

Images