Substrate processing method

Abstract

The present invention relates to a substrate processing method, and more particularly, to a substrate processing method that can prevent degradation of thin film properties by adjusting the temperature inside a chamber during substrate processing. The present invention discloses a substrate processing method, comprising: a pressurization step of increasing a process pressure from a first pressure P1 to a second pressure P2 greater than atmospheric pressure; a pressure reduction step of reducing the process pressure from a sixth pressure P6 greater than atmospheric pressure to a seventh pressure P7; an annealing step of varying the process pressure between the pressurization step and the pressure reduction step in a temperature environment at a second temperature T2 greater than room temperature using a pre-set pressure variation pattern; wherein a temperature increase step is performed during or after the pressurization step, wherein the temperature increase step increases the temperature environment from the first temperature T1 to the second temperature T2 from a pre-set temperature increase time point t1 to a pre-set temperature increase end point t2.

Description

Technical Field

[0001] The present invention relates to a substrate processing method, and more particularly, to a substrate processing method capable of preventing degradation of thin film properties by adjusting the temperature inside a chamber when processing a substrate. Background Art

[0002] Elements such as semiconductors, LCD substrates, and OLED substrates are manufactured through semiconductor processes that include one or more deposition processes and etching processes.

[0003] In particular, for semiconductor devices, in order to form circuit patterns, etc., a thin film can be formed on the surface of a substrate through a deposition process, which can be performed through various semiconductor processes such as CVD, PVD, and ALD.

[0004] Meanwhile, conventionally, to remove impurities from a thin film formed on a substrate by a deposition process, an annealing process is performed to change the pressure and temperature inside a chamber to move impurities inside the film to the surface or outside of the film.

[0005] However, when performing the annealing process, when the substrate enters, the temperature inside the chamber rises while O2 remains on the substrate, or the temperature inside the chamber is high and the pressure is lower than atmospheric pressure, and O2 leaks into the chamber or is discharged onto the chamber wall or inside the substrate. In this case, the O2 reacts with the thin film to be annealed, resulting in a problem of deterioration of the film properties (ex. Rs). Summary of the Invention

[0006] Problem to be solved

[0007] An object of the present invention is to solve the above-mentioned problems and to provide a substrate processing method that can prevent degradation of thin film properties by adjusting the temperature inside a chamber.

[0008] Means of solving the problem

[0009] The present invention is proposed to achieve the purpose of the present invention as described above, and the present invention discloses a substrate processing method, comprising: a pressurization step, raising the process pressure from a first pressure P1 to a second pressure P2 greater than atmospheric pressure; a pressure reduction step, reducing the process pressure from a sixth pressure P6 greater than atmospheric pressure to a seventh pressure P7; an annealing step, changing the process pressure between the pressurization step and the pressure reduction step in a temperature environment of a second temperature T2 higher than normal temperature according to a pre-set pressure change pattern; wherein, a temperature increase step is performed during or after the execution of the pressurization step, and the temperature increase step is to increase the temperature environment from the first temperature T1 to the second temperature T2 from a pre-set temperature increase time point t1 to a pre-set temperature increase end point t2.

[0010] The temperature increasing time point t1 and the temperature increasing end point t2 may be set between the start time point of the pressurizing step and the start time point of the annealing step.

[0011] The temperature increasing time point t1 may be set as a time point after the process pressure is increased to above atmospheric pressure.

[0012] The temperature increasing step may be performed for a preset temperature increasing time period while the process pressure is maintained at the second pressure P2 after the pressure increasing step and before the annealing step.

[0013] The substrate processing method may further include a vacuum step, wherein the process pressure is in a vacuum state before the pressurization step is performed.

[0014] The substrate processing method may perform a cooling step after the annealing step and before the depressurization step or during the depressurization step, wherein the cooling step is to cool the temperature environment from the second temperature T2 to the third temperature T3 from a pre-set cooling time point t3 to a cooling end point t4.

[0015] The temperature-lowering time point t3 and the temperature-lowering end point t4 may be set between the end time point of the annealing step and the end time point of the pressure-lowering step.

[0016] The temperature reduction end point t4 can be set at a time point before the process pressure drops below atmospheric pressure.

[0017] The pressure reduction step includes: a first pressure reduction step of reducing the process pressure from a sixth pressure P6 greater than atmospheric pressure to an eighth pressure P8; a pressure maintaining step of maintaining the process pressure at the eighth pressure P8; a second pressure reduction step of reducing the pressure from the eighth pressure P8 to a seventh pressure P7; wherein the cooling time point t3 and the cooling end point t4 can be set between the end time point of the annealing step and the end time point of the first pressure reduction step.

[0018] The temperature reduction step may be performed for a preset temperature reduction time period while maintaining the sixth pressure P6 after the annealing step and before the pressure reduction step.

[0019] Effects of the Invention

[0020] The substrate processing method of the present invention performs a heating step during or after the pressurization step, and heats the temperature environment from the first temperature T1 to the second temperature T2 from the pre-set heating time point t1 to the pre-set heating end point t2, thereby having the advantage of improving the thin film properties (ex.Rs) formed on the substrate.

[0021] In addition, the substrate processing method of the present invention performs a cooling step after the annealing step, cooling the temperature environment from the second temperature T2 to the third temperature T3 from the pre-set cooling time point t3 to the cooling end point t4, thereby having the advantage of improving the thin film properties (ex.Rs) formed on the substrate.

[0022] In addition, the substrate processing method of the present invention also performs a vacuum step before the pressurization step to discharge the gas (ex. O2) remaining inside the chamber to prevent it from reacting with the thin film, thereby having the advantage of more effectively improving the properties of the thin film (ex. Rs) formed on the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 This is a graph showing changes in pressure and temperature when a conventional substrate processing method is performed.

[0024] Figure 2 Graphs showing changes in pressure and temperature when the substrate processing method of the present invention is performed.

[0025] Figure 3 Is to show the execution Figure 2 A graph showing changes in pressure and temperature during another embodiment of a substrate processing method.

[0026] Figure 4 It is shown in the execution Figure 2 A graph showing pressure and temperature changes during another embodiment of a substrate processing method.

[0027] Figures 5a to 5c Graph showing changes in Rs before and after the annealing step of thin films manufactured using the conventional technology and the substrate processing method of the present invention.

[0028] Description of Reference Numerals

[0029] P1: First pressure P2: Second pressure

[0030] T1: first temperature T1 T2: second temperature DETAILED DESCRIPTION

[0031] Hereinafter, the substrate processing method of the present invention will be described with reference to the accompanying drawings.

[0032] The terms used in this specification and claims should not be interpreted limited to their ordinary or dictionary meanings, but should be interpreted according to the meanings and concepts of the technical terms in their intended meanings.

[0033] The embodiments described in this specification and the structures shown in the drawings are preferred embodiments of the present invention and do not represent the technical ideas of the present invention. Therefore, various equivalents and modifications that can replace them may exist at the time of application of the present invention.

[0034] The present invention discloses a substrate processing method, comprising: a pressurization step, increasing the process pressure from a first pressure P1 to a second pressure P2 greater than atmospheric pressure; a pressure reduction step, reducing the process pressure from a sixth pressure P6 greater than atmospheric pressure to a seventh pressure P7; an annealing step, changing the process pressure between the pressurization step and the pressure reduction step in a temperature environment of a second temperature T2 higher than normal temperature according to a pre-set pressure change pattern; wherein a temperature increase step is performed during or after the execution of the pressurization step, and the temperature increase step is to increase the temperature environment from the first temperature T1 to the second temperature T2 from a pre-set temperature increase time point t1 to a pre-set temperature increase end point t2.

[0035] Here, the chamber, which is a structure forming a sealed processing space, may have various structures.

[0036] For example, the chamber may have a batch type structure, and may have a double tube structure including an inner chamber and an outer chamber.

[0037] The pressurizing step, the depressurizing step, and the annealing step are steps for changing the process pressure inside the chamber, and the process pressure can be changed at various times and pressures.

[0038] Here, at least one of the pressurizing step, the depressurizing step, and the annealing step supplies and / or discharges a pressure-variable gas containing one or more elements of hydrogen H, oxygen O, nitrogen N, chlorine Cl, and fluorine F, thereby changing the process pressure.

[0039] The pressurization step, which is a step of increasing the process pressure from the first pressure P1 to the second pressure P2 greater than the atmospheric pressure, may have various structures.

[0040] The pressurization step can be performed at various pressurization speeds and various pressurization times.

[0041] Here, various pressure values ​​can be set for the first pressure P1, and for example, it can be a pressure in a vacuum state lower than atmospheric pressure.

[0042] Here, various pressure values ​​can be set for the second pressure P2. For example, as a pressure value higher than atmospheric pressure, 2 atm can be used.

[0043] Then, before the pressurization step is performed, a vacuum step may be included in which the process pressure is in a vacuum state.

[0044] The vacuum step, which is a step in which the process pressure is in a vacuum state, may have various structures.

[0045] For example, the vacuum step can be performed at various times.

[0046] Then, the first pressure P1 as the process pressure in the vacuum step may be a pressure in a vacuum state.

[0047] Then, before / after the vacuum step, a step of reducing the process pressure from a pressure higher than vacuum to a first pressure P1 in a vacuum state, or increasing the process pressure from the first pressure P1 in a vacuum state to a pressure higher than vacuum may be included.

[0048] The pressure reduction step, which is a step of reducing the process pressure from the sixth pressure P6 greater than the atmospheric pressure to the seventh pressure P7, may have various structures.

[0049] The depressurization step can be performed at various depressurization speeds and for various depressurization times.

[0050] For example, the depressurization step may include: a first depressurization step of reducing the process pressure from a sixth pressure P6 greater than atmospheric pressure to an eighth pressure P8; a pressure maintaining step of maintaining the process pressure at the eighth pressure P8; and a second depressurization step of reducing the process pressure from the eighth pressure P8 to a seventh pressure P7.

[0051] Here, various pressure values ​​can be set for the sixth pressure P6. For example, as a pressure value higher than atmospheric pressure, 2 atm can be used.

[0052] Here, the eighth pressure P8 may be any pressure value as long as it is between the sixth pressure P6 and the seventh pressure P7 , and may be, for example, atmospheric pressure.

[0053] Here, various pressure values ​​can be set for the seventh pressure P7, for example, it can be a pressure below atmospheric pressure or a pressure in a vacuum state.

[0054] The first pressure reduction step, which is a step of reducing the process pressure from a sixth pressure P6 greater than the atmospheric pressure to an eighth pressure P8, may have various structures.

[0055] For example, the first depressurization step may have various depressurization speeds and depressurization times.

[0056] Here, the pressure maintaining step as a step of maintaining the process pressure at the eighth pressure P8 may have various structures.

[0057] For example, the pressure holding step may have various pressure holding times.

[0058] Here, the second pressure reducing step, which is a step of reducing the pressure from the eighth pressure P8 to the seventh pressure P7, may have various structures.

[0059] For example, the second depressurization step may have various depressurization speeds and depressurization times.

[0060] On the other hand, the annealing step is performed between the pressurizing step and the depressurizing step and is a step of changing the process pressure in a predetermined pressure variation pattern under a temperature environment of a second temperature T2 higher than room temperature.

[0061] Specifically, in the annealing step, variable-pressure gas is injected into the chamber, and then, when the process pressure is increased in the variable-pressure gas environment, impurities (ex. Cl) in a loosely bound state and impurities (ex. Cl) in a free, unbound state that are separated from the elements (ex. Ti) constituting the thin film are combined with elements (ex. H) contained in the variable-pressure gas to be in an inert state (ex. HCl) that is easily vaporized. In addition, the impurities in a tightly bound state with the elements constituting the thin film are also destroyed, thereby increasing the possibility of reduction. At this time, if the process pressure is suddenly reduced from the increased pressure state, the impurities in an inert state can be discharged together with the variable-pressure gas.

[0062] Here, various gases may be used as the pressure-changing gas. For example, H 2 gas may be used together with a carrier gas such as N 2 .

[0063] During the above-mentioned pressure-variable gas injection and discharge process, the process pressure is reduced and increased. At this time, the process pressure can change in a pre-set pressure change pattern according to the degree of impurity removal and the direction of improvement of film characteristics (ex, composition, particle size, Rs, etc.).

[0064] Here, the pre-set pressure change pattern is formed by increasing, decreasing, and maintaining the process pressure, and various pressure change patterns can be provided.

[0065] For example, Figures 1 to 4 As shown, the pressure change mode may include at least any one of a descending mode, an ascending mode and a pressure holding mode. The descending mode is to reduce the process pressure from the second pressure P2 or the fifth pressure P5 which is higher than the atmospheric pressure to the fourth pressure P4 which is lower than the atmospheric pressure. The ascending mode is to increase the pressure from the fourth pressure P4 to the fifth pressure P5 or the sixth pressure P6 which is higher than the atmospheric pressure. The pressure holding mode is to maintain the pressure at the second pressure P2, the fifth pressure P5 and the third pressure P3.

[0066] In this case, the pressure change pattern is not limited to the aforementioned decreasing pattern, increasing pattern, and maintaining pattern, but may include various pressure change patterns, and each pattern may be repeatedly executed at least N times (N≥1).

[0067] Here, as described above, various pressure values ​​can be set for the second pressure P2. For example, 2 atm can be used as a pressure value higher than atmospheric pressure.

[0068] Here, the third pressure P3 may be any pressure value as long as it is a pressure value between the second pressure P2 and the fourth pressure P4, and may be, for example, a pressure in an atmospheric pressure state.

[0069] Here, various pressure values ​​may be set for the fourth pressure P4, for example, a pressure value lower than atmospheric pressure.

[0070] Here, various pressure values ​​can be set for the fifth pressure P5. For example, 2 atm can be used as a pressure value higher than atmospheric pressure.

[0071] Here, various pressure values ​​can be set for the sixth pressure P6. For example, 2 atm can be used as a pressure value higher than atmospheric pressure.

[0072] On the other hand, in order to improve the efficiency of removing impurities remaining in the thin film and the efficiency of improving the film characteristics, the above-mentioned annealing step is performed in a temperature environment of a second temperature T2 higher than room temperature. Accordingly, a heating step and a cooling step must be performed in the substrate processing process including the annealing step. The heating step heats the temperature inside the chamber to the second temperature T2 when the process is performed, and the cooling step cools the chamber to a third temperature T3 at the end of the process.

[0073] Here, the temperature increasing step may be understood as a step of increasing the temperature environment from the first temperature T1 to the second temperature T2 from the temperature increasing time point t1 to the temperature increasing end point t2.

[0074] Here, the cooling step may be understood as a step of cooling the temperature environment from the second temperature T2 to the third temperature T3 from the cooling time point t3 to the cooling end point t4.

[0075] Here, the heating time point t1 can be understood as the time point when the temperature inside the chamber is raised from the first temperature T1 and the heating step begins; the heating end point t2 can be understood as the time point when the temperature inside the chamber reaches the second temperature T2 and the heating step ends.

[0076] Here, the cooling time point t3 can be understood as the time point when the chamber internal temperature is cooled from the second temperature T2 and the cooling step begins; the cooling end point t4 can be understood as the time point when the chamber internal temperature reaches the third temperature T3 and the cooling step ends.

[0077] Here, the first temperature T1 may have various temperature values, for example, 200° C.

[0078] Here, the second temperature T2 may have various temperature values, for example, a temperature value between 400° C. and 500° C.

[0079] Here, the third temperature T3 may have various temperature values, for example, may be 200°C.

[0080] On the other hand, in the past, when a substrate enters the chamber, the temperature inside the chamber rises when O2 remains on the substrate, or when the temperature inside the chamber is high and the pressure is lower than atmospheric pressure, O2 leaks into the chamber or is discharged from the chamber wall or inside the substrate. In this case, the O2 reacts with the thin film to be annealed.

[0081] Specifically, if Figure 1 As shown, in the past, the heating time point t1 and the heating end point t2 were set before the pressurization step was performed, and the cooling time point t3 and the cooling end point t4 were set after the pressurization step was performed. Therefore, the heating step and the cooling step were performed under a state where the process pressure was lower than the atmospheric pressure. As a result, the O2 remaining in the chamber reacted with the thin film formed on the substrate, resulting in the problem of deterioration of the film properties (ex.Rs).

[0082] Based on this, the inventors of the present invention realized the problem mentioned above, and in order to solve the problem, invented the following substrate processing process: the heating time point t1, the heating end point t2, the cooling time point t3 and the cooling end point t4 are specified at time points that can minimize the degradation of the film, thereby preventing the film properties from being degraded. This will be described in detail below.

[0083] First, the temperature increasing step of the present invention is a step of increasing the temperature environment from the first temperature T1 to the second temperature T2 from the predetermined temperature increasing time point t1 to the temperature increasing end point t2 during or after the pressurization step, and can have various structures.

[0084] At this time, if Figures 2 to 4 As shown, the heating time point t1 and the heating end point t2 in the heating step can be set between the starting time point of the pressurization step (the time point when the pressurization starts from the first pressure P1 to the second pressure P2) and the starting time point of the annealing step (the time point when the pressure starts to decrease from the second pressure P2 to the fourth pressure P4).

[0085] As an example, Figure 3 As shown, the temperature rising step of the present invention may be to raise the temperature environment from the first temperature T1 to the second temperature T2 from the pre-set temperature rising time point t1 to the temperature rising end point t2 during the “pressurization step”.

[0086] Here, the temperature rising time point t1 can be set at any time point as long as it is after the start time point of the pressurization step. Preferably, it is set at a time point after a predetermined amount of variable pressure gas is added to increase the pressurization process pressure to above atmospheric pressure in order to protect the target film from O2 gas.

[0087] At this time, the substrate processing method of the present invention also includes a vacuum step in which the process pressure is in a vacuum state before the pressurization step is performed, and the O2 remaining inside the chamber is discharged to the outside in the vacuum step. Therefore, the O2 itself that reacts with the thin film formed on the substrate hardly exists inside the chamber, thereby preventing the film from deteriorating.

[0088] That is, the temperature rising step of the present invention can be performed after the vacuum step and before the annealing step, when the process pressure rises to the second pressure P2 and / or is maintained at the second pressure P2, during the temperature rising time set in advance, such as Figure 3 As shown, the temperature increasing time point t1 and the temperature increasing end point t2 may be set when the process pressure is increased to and maintained at the second pressure P2 during the pressurizing step and before the annealing step.

[0089] As another example, Figure 2 and Figure 4 As shown, the temperature increasing step of the present invention may be to increase the temperature environment from the first temperature T1 to the second temperature T2 from the pre-set temperature increasing time point t1 to the temperature increasing end point t2 after the pressurization step is performed.

[0090] At this time, the temperature increasing step of the present invention may be performed for a preset temperature increasing time while maintaining the second pressure P2 after the pressurizing step and before the annealing step.

[0091] That is, Figure 2 and Figure 4 As shown, the heating time point t1 and the heating end point t2 of the heating step can be set in a state where the process pressure is maintained at the second pressure P2 after the pressurizing step and before the annealing step.

[0092] In this case, even if there is O2 remaining inside the chamber, it is before the temperature starts to rise, so it is kept at a relatively low temperature (first temperature T1), and it is difficult for O2 to react with the thin film formed on the substrate; after the temperature is raised, the process pressure is kept at the second pressure P2 higher than the atmospheric pressure, and O2 cannot enter from the outside through chamber leakage. Even if O2 remains in the chamber due to outgassing, it is in a state of sufficient supply of the above-mentioned variable pressure gas (ex. H2), thereby protecting the thin film formed on the substrate and preventing degradation of the thin film.

[0093] Then, the above-mentioned heating time can be defined by the time taken to heat up from the heating time point t1 to the heating end point t2, and can be variously set according to the device, film, process characteristics, etc.

[0094] On the other hand, the cooling step of the present invention is a step of cooling the temperature environment from the second temperature T2 to the third temperature T3 from a pre-set cooling time point t3 to a cooling end point t4 after the annealing step is performed and before the pressure reduction step is performed, or during the pressure reduction step, and can have various structures.

[0095] At this time, if Figures 2 to 4 As shown, the cooling time point t3 and the cooling end point t4 in the cooling step can be set between the end time point of the annealing step (the end time point of pressurization from the fourth pressure P4 to the sixth pressure P6) and the end time point of the depressurization step (the end time point of depressurization from the sixth pressure P6 to the seventh pressure P7).

[0096] However, the cooling end point t4 can be set at any time point as long as it is before the end time point of the pressure reduction step. However, if the process pressure is below atmospheric pressure, O2 gas can enter from the outside through chamber leakage or O2 can be discharged from the chamber wall or inside the substrate. Therefore, it is preferably set at a time point before the process pressure drops below atmospheric pressure.

[0097] As an example, Figure 4 As shown, the cooling time point t3 and the cooling end point t4 can be set between after the end of the annealing step and the end time point of the first depressurization step (the end time point of the depressurization from the sixth pressure P6 to the eighth pressure P8).

[0098] That is, the cooling step of the present invention can be performed for a preset cooling time period after the annealing step and before the first pressure reduction step, with the process pressure maintained at the sixth pressure P6 and reduced to the atmospheric pressure P0.

[0099] That is, in order to prevent O2 from entering from the outside through leakage into the chamber, the cooling step should be completed before the end of the first pressure reduction step, that is, when the process pressure is greater than the atmospheric pressure. Accordingly, the cooling end point t4 is preferably set before the end time point of the first pressure reduction step.

[0100] As another example, Figure 2 and Figure 3 As shown, the temperature reduction step of the present invention can be performed for a preset temperature reduction time period after the annealing step is completed and before the pressure reduction step is performed while maintaining the sixth pressure P6.

[0101] That is, Figure 2 and Figure 3 As shown, the temperature-lowering time point t3 and the temperature-lowering end point t4 of the temperature-lowering step can be set while maintaining the sixth pressure P6 after the annealing step is completed and before the pressure-lowering step is performed.

[0102] In this case, even if a cooling step is performed, the process pressure is kept at the sixth pressure P6, so it is difficult for O2 to enter from the outside through chamber leakage. Even if outgassing occurs, the thin film formed on the substrate is protected by the above-mentioned variable pressure gas, thereby preventing the film from deteriorating.

[0103] On the other hand, through Figures 5a to 5c The surface resistance (Rs) curve shows that the heating time point t1, the heating end point t2, the cooling time point t3 and the cooling end point t4 are respectively designated at time points that can minimize the degradation of the film, thereby preventing the degradation of the physical properties of the film.

[0104] Here, Figures 5a to 5c The graph of FIG. 1 is a graph showing changes in Rs of thin film TiN before and after the substrate treatment process in which an annealing step including temperature increasing and temperature decreasing steps is performed.

[0105] Here, Figure 5a The graph is a graph showing changes in Rs of a thin film according to a conventional substrate processing method (Example 1).

[0106] Here, Figure 5b 3 is a graph showing the change in Rs of the thin film in the substrate processing process in which the cooling time point t3 and the cooling end point t4 are set while maintaining the sixth pressure P6 after the annealing step and before the pressure reduction step (Example 2).

[0107] Here, Figure 5c It is a graph showing the Rs change of the thin film in the substrate processing process in which the heating time point t1 and the heating end point t2 are set while the process pressure is maintained at the second pressure P2 after the pressurization step is performed and before the annealing step is performed, and the cooling time point t3 and the cooling end point t4 are set while the sixth pressure P6 is maintained after the annealing step is completed and before the depressurization step is performed (Example 3).

[0108] In the case of the film of Example 1, the Rs value of the film increased by 27% from 105.63Ω / sq to 134.20Ω / sq after the process was executed, confirming that the film characteristics were deteriorated; on the contrary, in the case of the film of Example 2, the Rs value of the film increased by 11% from 105.29Ω / sq to 117.09Ω / sq after the process was executed, confirming that the Rs increase rate was reduced by 16% compared with the film of Example 1; in the case of the film of Example 3, the Rs value of the film decreased by 11% from 106.49Ω / sq to 94.38Ω / sq after the process was executed, confirming that the film characteristics were improved.

[0109] That is, compared with the previous substrate processing method, when the cooling time point t3 and the cooling end point t4 are set at specific time points according to the present invention, the degree of reduction in the Rs characteristics of the film is reduced, and when the heating time point t1 and the heating end point t2 are also specified according to the present invention while specifying the cooling time point t3 and the cooling end point t4, the Rs value of the film is reduced instead. Therefore, the effect of the substrate processing method of the present invention can be clearly confirmed.

[0110] On the other hand, the substrate processing method described above can be applied to improve the characteristics of any thin film, and can certainly be more effective in improving the Rs characteristics of thin and easily oxidized thin films, such as TiN, W, Si, etc.

[0111] Then, the O2 gas described in this specification is exemplarily described as a gas that reacts with the thin film, but as long as it remains in the chamber and reacts with the thin film, it can be any gas, and of course is not limited to the above-mentioned O2 gas.

[0112] The above is only a part of the relevant description of the preferred embodiments that can be implemented by the present invention. It is well known that the scope of the present invention is not limited to the above embodiments. The technical ideas of the present invention described above and its fundamental technical ideas are all included in the scope of the present invention.

Claims

1. A substrate processing method, comprising: a pressurization step of increasing the process pressure from a first pressure P1 to a second pressure P2 greater than atmospheric pressure; a depressurization step of reducing the process pressure from a sixth pressure P6 greater than atmospheric pressure to a seventh pressure P7; An annealing step is performed by changing the process pressure between the pressurizing step and the depressurizing step in a temperature environment of a second temperature T2 higher than room temperature according to a pre-set pressure change pattern; The temperature raising step is performed during or after the pressurization step, and the temperature raising step is to raise the temperature environment from the first temperature T1 to the second temperature T2 from the preset temperature raising time point t1 to the preset temperature raising end point t2. After the annealing step is performed, a cooling step is performed to cool the temperature environment from the second temperature T2 to the third temperature T3. Wherein, the annealing step comprises: a descending mode, reducing the process pressure from the second pressure P2; and In the rising mode, the process pressure is raised to the sixth pressure P6.

2. The substrate processing method according to claim 1, wherein: The temperature increase time point t1 and the temperature increase end point t2 are set between the start time point of the pressurization step and the start time point of the annealing step.

3. The substrate processing method according to claim 2, wherein: The temperature increase time point t1 is set as the time point after the process pressure is increased to above atmospheric pressure.

4. The substrate processing method according to claim 2, wherein: The heating step is: After the pressurizing step is performed and before the annealing step is performed, the process pressure is maintained at the second pressure P2 for a predetermined temperature increasing time period.

5. The substrate processing method according to claim 2, wherein: The substrate processing method further comprises a vacuum step, The vacuum step is to keep the process pressure in a vacuum state before the pressurization step is performed.

6. The substrate processing method according to claim 1, wherein: The cooling step is performed after the annealing step and before the pressure reduction step or during the pressure reduction step. The cooling step is to cool the temperature environment from the second temperature T2 to the third temperature T3 from the pre-set cooling time point t3 to the cooling end point t4.

7. The substrate processing method according to claim 6, wherein: The temperature-lowering time point t3 and the temperature-lowering end point t4 are set between the end time point of the annealing step and the end time point of the pressure-lowering step.

8. The substrate processing method according to claim 7, wherein: The temperature drop end point t4 is set at the time point before the process pressure drops below atmospheric pressure.

9. The substrate processing method according to claim 6, wherein: The depressurization step comprises: A first pressure reduction step of reducing the process pressure from a sixth pressure P6 greater than atmospheric pressure to an eighth pressure P8; a pressure maintaining step of maintaining the process pressure at the eighth pressure P8; a second pressure reduction step, reducing the pressure from the eighth pressure P8 to the seventh pressure P7; The temperature-lowering time point t3 and the temperature-lowering end point t4 are set between the end time point of the annealing step and the end time point of the first pressure-lowering step.

10. The substrate processing method according to claim 6, wherein: The cooling step is: After the annealing step is completed and before the pressure reduction step is performed, the sixth pressure P6 is maintained for a predetermined temperature reduction time period.

11. A substrate processing method, comprising: a pressurization step of increasing the process pressure from a first pressure P1 to a second pressure P2 greater than atmospheric pressure; a depressurization step of reducing the process pressure from a sixth pressure P6 greater than atmospheric pressure to a seventh pressure P7; An annealing step is performed by changing the process pressure between the pressurizing step and the depressurizing step in a temperature environment of a second temperature T2 higher than room temperature according to a pre-set pressure change pattern; wherein, a cooling step is performed after the annealing step and before the pressure reduction step or during the pressure reduction step, wherein the cooling step is to cool the temperature environment from the second temperature T2 to the third temperature T3 from a preset cooling time point t3 to a cooling end point t4; Before the annealing step is performed, a temperature raising step is performed, wherein the temperature environment is raised from the first temperature T1 to the second temperature T2. Wherein, the annealing step comprises: a descending mode, reducing the process pressure from the second pressure P2; and In the rising mode, the process pressure is raised to the sixth pressure P6.

12. The substrate processing method according to claim 11, wherein: The temperature-lowering time point t3 and the temperature-lowering end point t4 are set between the end time point of the annealing step and the end time point of the pressure-lowering step.

13. The substrate processing method according to claim 12, wherein: The temperature drop end point t4 is set at the time point before the process pressure drops below atmospheric pressure.

14. The substrate processing method according to claim 11, wherein: The depressurization step comprises: A first pressure reduction step of reducing the process pressure from a sixth pressure P6 greater than atmospheric pressure to an eighth pressure P8; a pressure maintaining step of maintaining the process pressure at the eighth pressure P8; a second pressure reduction step, reducing the pressure from the eighth pressure P8 to the seventh pressure P7; The temperature-lowering time point t3 and the temperature-lowering end point t4 are set between the end time point of the annealing step and the end time point of the first pressure-lowering step.

15. The substrate processing method according to claim 11, wherein: The cooling step is: After the annealing step is completed and before the pressure reduction step is performed, the temperature reduction time period set in advance is performed while maintaining the sixth pressure P6.

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