Micro semiconductor chip transfer substrate, display transfer structure, display device and method for manufacturing display device

Abstract

According to one aspect of an embodiment, there is provided a micro semiconductor chip transfer substrate, the micro semiconductor chip transfer substrate including: a mold including a plurality of recesses formed to be recessed from an upper surface by a certain depth; and a surface energy reducing pattern formed on the upper surface in a region between the plurality of recesses, the surface energy reducing pattern including a plurality of uneven patterns. When aligning a micro semiconductor chip by a wet alignment method, the sliding of the micro semiconductor chip toward the inside of the recess can be improved by such a surface energy reducing pattern.

Description

Technical Field

[0001] The present disclosure relates to a micro semiconductor chip transfer substrate, a display transfer structure, a display device, and a method of manufacturing a display device. Background Art

[0002] Due to the advantages of low power consumption and environmental friendliness of light emitting diodes (LEDs), the industrial demand for LEDs is increasing. In addition to being used as lighting devices or LCD backlights, LEDs are also applied to pixels of display devices. When manufacturing a display device using micro LED chips, the pick-and-place method is used to transfer the micro LEDs. However, as the size of the micro LEDs decreases and the size of the display increases, the productivity of such a method decreases. Summary of the Invention

[0003] Technical Problem

[0004] Provided are a display transfer structure that allows micro semiconductor chips to be effectively arranged on a large-area substrate, and a display device using the display transfer structure.

[0005] Solution to the Problem

[0006] According to an aspect of an embodiment, there is provided a micro semiconductor chip transfer substrate including: a mold including a plurality of recesses formed to be recessed from an upper surface by a certain depth; and a surface energy reducing pattern formed on the upper surface in a region between the plurality of recesses, the surface energy reducing pattern including a plurality of uneven patterns.

[0007] The width of the uneven pattern may be 50% or less of the width of the recess.

[0008] The interval between adjacent uneven patterns among the plurality of uneven patterns may be smaller than the width of the plurality of recesses.

[0009] The interval (defined as s) between adjacent uneven patterns among the plurality of uneven patterns may satisfy the following condition.

[0010] s < (w1 - w2) / 2

[0011] Wherein, w1 and w2 respectively refer to the width of the plurality of recesses and the width of the plurality of uneven patterns.

[0012] The surface energy reducing pattern may include a plurality of protruding patterns protruding upward from the upper surface.

[0013] The plurality of protruding patterns may include a material different from the material of the mold.

[0014] The protruding pattern may be made of a metal material.

[0015] The surface energy reducing pattern may further include a filling pattern including a material different from that of the protruding pattern and filling the regions between the plurality of protruding patterns.

[0016] The surface energy reducing pattern and the mold may be integrally formed of the same material.

[0017] A plurality of recessed patterns recessed from the upper surface of the mold to the lower part may be included.

[0018] The recessed depth of the plurality of recessed patterns may be less than the depth of the plurality of depressions.

[0019] The surface energy reducing pattern may be formed by roughening the upper surface of the mold.

[0020] According to an aspect of an embodiment, there is provided a display transfer structure including: any one of the above-described micro semiconductor chip transfer substrates; and a micro semiconductor chip disposed on any one of the plurality of depressions.

[0021] The width of the uneven pattern may be 50% or less of the width of the micro semiconductor chip.

[0022] The interval (defined as s) between adjacent uneven patterns among the plurality of uneven patterns may satisfy the following condition:

[0023] s ≤ (w3 - w2) / 2

[0024] Wherein, w3 and w2 respectively refer to the width of each micro semiconductor chip and the width of each uneven pattern.

[0025] The display transfer structure may further include a driving circuit configured to drive the micro semiconductor chip.

[0026] The driving circuit may be disposed inside the micro semiconductor chip transfer substrate.

[0027] The display device may further include a circuit board disposed under the micro semiconductor chip transfer substrate and including a driving circuit.

[0028] According to an aspect of an embodiment, there is provided a display device including: any one of the display transfer structures; a driving circuit configured to drive the micro semiconductor chip; and a color conversion layer disposed on the transfer substrate.

[0029] According to an aspect of an embodiment, there is provided an electronic device including the display device.

[0030] According to one aspect of an embodiment, a method of manufacturing a display device is provided. The method includes aligning a micro semiconductor chip in a plurality of recesses of any one of micro semiconductor chip transfer substrates; and transferring the micro semiconductor chip onto a display device including a driving circuit configured to drive the micro semiconductor chip.

[0031] Advantages disclosed

[0032] The micro semiconductor chip transfer substrate has a surface energy reducing pattern, thereby allowing the micro semiconductor chip to easily move into the recess and be aligned in the recess.

[0033] In the display transfer structure, a plurality of micro semiconductor chips can be easily aligned at accurate positions over a large area.

[0034] Using the display transfer structure, various types of display devices, such as large area display devices, can be easily realized. Description of the drawings

[0035] Figure 1 is a schematic perspective view showing the structure of a micro semiconductor chip transfer substrate according to an embodiment.

[0036] Figure 2 is Figure 1 an enlarged cross-sectional view of a part of

[0037] Figure 3 is a conceptual diagram illustrating the interval requirement between uneven patterns provided on the Figure 1 micro semiconductor chip transfer substrate related to the size of the micro semiconductor chip.

[0038] Figure 4 is a conceptual diagram showing the interval between uneven patterns provided on a transfer substrate according to a comparative example.

[0039] Figure 5a and Figure 5b each of

[0040] Figure 6 is a schematic cross-sectional view showing the structure of a micro semiconductor chip transfer substrate according to another embodiment.

[0041] Figure 7 is a cross-sectional view showing the schematic structure of a micro semiconductor chip transfer substrate according to another embodiment.

[0042] Figure 8 is a schematic perspective view of a display transfer structure according to an embodiment.

[0043] Figure 9 is Figure 8 an enlarged cross-sectional view of a part of

[0044] Figure 10 is a diagram for explaining the process of forming Figure 8 the display transfer structure of

[0045] Figure 11 is a micrograph showing the manufactured Figure 8 display transfer structure of

[0046] Figure 12 is a micrograph showing the manufactured display transfer structure according to the comparative example.

[0047] Figure 13 is a schematic cross-sectional view of a display transfer structure according to another embodiment.

[0048] Figure 14 is a schematic cross-sectional view of a display transfer structure according to another embodiment.

[0049] Figure 15 is a schematic cross-sectional view of a display transfer structure according to another embodiment.

[0050] Figure 16 is a schematic cross-sectional view of a display transfer structure according to another embodiment.

[0051] Figure 17 is a schematic cross-sectional view of a display transfer structure according to another embodiment.

[0052] Figure 18 is a schematic cross-sectional view of a display transfer structure according to another embodiment.

[0053] Figure 19 is a schematic cross-sectional view of a display device according to an embodiment.

[0054] Figure 20 shows that the micro semiconductor chip provided on the display transfer structure is transferred to the display substrate.

[0055] Figure 21 is a schematic cross-sectional view of a display device according to another embodiment.

[0056] Figure 22 is a schematic cross-sectional view of a display device according to another embodiment.

[0057] Figure 23 is a flowchart schematically showing a method of manufacturing a display device according to an embodiment.

[0058] Figure 24 is a schematic block diagram showing an electronic device according to an embodiment. Detailed Embodiments

[0059] In the following, embodiments will be described in detail with reference to the accompanying drawings. Additionally, the embodiments described below are provided only as examples and can thus be embodied in various forms. In the drawings, the same reference numerals refer to the same elements, and for clarity and ease of explanation, the dimensions of each component are exaggerated.

[0060] It will be understood that when a component is referred to as being "on" or "above" another component, the component can be directly on, below, to the left, or to the right of the other component, or can be above, below, to the left, or to the right of the other component in a non-contact manner.

[0061] Terms such as "first", "second", etc. can be used to describe various elements, but are used here only to distinguish one element from another. These terms do not limit the components to having different materials or structures from each other.

[0062] As used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. Throughout the specification, unless otherwise described, when a part "comprises" an element, another element can be further included, rather than excluding the existence of another element.

[0063] Furthermore, terms such as "... unit", "module", etc. provided herein can represent a unit that performs at least one function or operation and can be implemented by hardware, software, or a combination of hardware and software.

[0064] As used herein, specifically, terms such as "the" and similar indicative words used herein can indicate both the singular and the plural.

[0065] Unless it is explicitly stated that the operations of a method should be performed in the order described below, these operations can be performed in an appropriate order. The use of any and all examples or example language (e.g., "such as") provided herein is only intended to better illustrate the present disclosure and does not impose a limitation on the scope of the present disclosure, unless otherwise stated.

[0066] Figure 1 is a schematic perspective view of a micro semiconductor chip transfer structure according to an embodiment, Figure 2 is Figure 1 an enlarged cross-sectional view of a part of

[0067] The micro semiconductor chip transfer substrate 130 (also referred to as the transfer substrate hereinafter) may include: a mold 110 including a plurality of recessed HO; and a surface energy reduction pattern SP formed on the upper surface 110a of the mold 110 and including a plurality of uneven patterns formed on the regions between the plurality of recessed HO. In the present embodiment, the surface energy reduction pattern SP may include a plurality of protruding patterns 120 protruding from the upper surface 110a of the mold 110.

[0068] The micro semiconductor chip transfer substrate 130 is used to align the plurality of micro semiconductor chips (not shown) in the plurality of recessed HO by a fluid self-alignment (FSA) method. The cross-sectional shape of the micro semiconductor chip 140 is shown as circular, but is not limited thereto, and may be, for example, rectangular. In addition, the shape of the recessed HO is shown as rectangular, but is not limited thereto, and may be, for example, circular or elliptical. The shape of the recessed HO may correspond to the shape of the micro semiconductor chip to be aligned therein.

[0069] The surface energy reduction pattern SP including the plurality of protruding patterns 120 formed on the transfer substrate 130 may be provided to reduce the surface energy of the upper surface 110a of the mold connected to the recessed HO, thereby preventing the micro semiconductor chip 140 from being fixed on the upper surface 110a of the mold 110. In other words, the sliding of the micro semiconductor chip 140 on the upper surface 110a of the mold 110 may be improved by the surface energy reduction pattern SP, thereby allowing the micro semiconductor chip 140 to easily move into the recessed HO without being pressed at a position other than the correct position. For example, when the micro semiconductor chips dispersed in a predetermined suspension are supplied onto the micro semiconductor chip transfer substrate 130, and when the micro semiconductor chips are bonding-fixed on the upper surface 110a of the mold 110 without entering the recessed HO, a cleaning process for removing the micro semiconductor chips may be required. In addition, generally, since a pressing process for fixing the micro semiconductor chips entering the recessed HO is performed before the cleaning process, it is not easy to remove the micro semiconductor chips fixed on the outer surface 110a of the mold 110 and the yield may be deteriorated. Generally, the surface energy of the interface between two surfaces is proportional to the contact area. Therefore, when the protruding patterns 120 are provided, the surface energy of the interface between the bottom surface of the micro semiconductor chip and the transfer substrate 130 may be reduced, and the micro semiconductor chip may be easily transferred into the recessed HO.

[0070] The width (w2) of the raised pattern 120 and the (multiple) intervals between the raised patterns 120 can be set such that the micro semiconductor chip 140 is not fixed on the raised pattern 120 or the upper surface 110a of the mold 110 and the path toward the recess HO is not blocked by the raised pattern 120. The cross-sectional shape of the raised pattern 120 is shown as circular, but this is an example. The raised pattern 120 can be changed to have a polygonal shape, an annular shape, an elliptical shape, or any other shape.

[0071] The width w1 of the recess can be formed to be greater than the width of the micro semiconductor chip to be mounted in the recess HO. The width w1 of the recess HO can be less than twice the width of the micro semiconductor chip, such that two or more micro semiconductor chips cannot enter one recess HO.

[0072] Figure 3 is a conceptual diagram illustrating the interval requirement between raised patterns on a micro semiconductor chip transfer substrate of a display transfer structure related to the size of the micro semiconductor chip provided in Figure 1

[0073] The width w2 of each raised pattern 120 can be less than the width w3 of each micro semiconductor chip 140. In addition, the width w3 of the micro semiconductor chip 140 can be less than the width w1 of the recess HO in which the micro semiconductor chip 140 will be mounted. The width w3 of the micro semiconductor chip 140 can be less than or equal to 95%, 90%, or 80% of the width w1 of the recess HO and greater than 50% of the width w1 of the recess HO. In order to reduce the surface energy at the interface between the raised pattern 120 and the micro semiconductor chip 140, the width w2 of each raised pattern 120 can be set to, for example, 50% or less, 30% or less, or 10% or less of each micro semiconductor chip 140.

[0074] In addition, the interval s between adjacent raised patterns 120 can be set to be less than the width w1 of each micro semiconductor chip 140. Even when the interval s between adjacent raised patterns 120 is less than the width w1 of each micro semiconductor chip 140, there may be a case where each end of each micro semiconductor chip 140 is caught in the upper and lower parts of the adjacent raised patterns 120, such that the micro semiconductor chip 140 cannot move toward the recess HO. To prevent such a phenomenon, the maximum value s of the interval s between adjacent raised patterns 120 can be set c

[0075] Therefore, s (which is the interval between adjacent raised patterns 120) can satisfy the following condition.

[0076] s ≤ s c =(w3 - w2) / 2

[0077] s (which is the interval between the protruding patterns 120) may satisfy the following conditions with respect to the width w1 of the recess HO.

[0078] s < (w1 - w2) / 2

[0079] Such requirements for the interval s and the widths w1, w2, and w3 also apply to directions other than the shown direction. That is, w3 may be the width of the bottom surface of the micro semiconductor chip 140 in any direction, w1 may be the width of the recess HO in any direction, and the widths w2 and the interval s between the protruding patterns 120 may be not only the widths and intervals in the X direction (as shown), but also the widths and intervals in any direction in a plane perpendicular to the Z direction.

[0080] The interval s between the protruding patterns 120 may be set to be equal to or less than the maximum value s c , s c of 90% or less, s c of 80% or less, or s c of 50% or less.

[0081] The height of the protruding pattern 120 is not particularly limited and may be set to be similar to, equal to, or less than the height of the micro semiconductor chip 140.

[0082] Figure 4 is a conceptual diagram showing an example of an inappropriate interval between protruding patterns provided on a transfer substrate according to a comparative example.

[0083] When the interval between the protruding patterns 12 does not satisfy the above conditions and is greater than s c , both ends of the micro semiconductor chip 140 may each be stuck in the upper and lower parts of adjacent protruding patterns 12 and it may be difficult to move the micro semiconductor chip 140 into the recess HO.

[0084] Figure 5a and Figure 5b is a schematic cross-sectional view showing the structure of a micro semiconductor chip transfer substrate according to another embodiment.

[0085] Figure 5a In the embodiment of, the surface energy reducing pattern SP1 of the micro semiconductor chip transfer substrate 131 may include a plurality of recessed patterns 121 recessed from the upper surface 110a of the mold 110. The depth H2 of the recessed pattern 121 may be equal to or less than the depth H1 of the recess HO. The recess HO and the recessed pattern 121 may be formed together when manufacturing the mold 110.

[0086] In Figure 5bIn the surface energy reducing pattern SP1' of the micro semiconductor chip transfer substrate 131' according to the embodiment, the depth H2 of the recessed pattern 121 may be the same as the depth H1 of the recess HO. In this case, the process in which the recess HO and the recessed pattern 121 are formed together when manufacturing the mold 110 may be easier.

[0087] Figure 6 FIG. is a schematic cross-sectional view showing the structure of a micro semiconductor chip transfer substrate according to another embodiment.

[0088] The surface energy reducing pattern SP2 of the micro semiconductor chip transfer substrate 132 according to the present embodiment may include a plurality of protruding patterns 123 protruding from the upper surface of the mold 110 and a filling pattern 124 filling the region between the plurality of protruding patterns 123. The protruding pattern 124 may be formed of a material different from that of the protruding pattern 123. The protruding pattern 123 and the filling pattern 124 may be formed to have approximately the same height, thereby forming a flat surface as a whole. Any one of the materials forming the protruding pattern 123 and the filling pattern 124 may be a hydrophilic material, and the other may be a hydrophobic material.

[0089] Figure 7 FIG. is a cross-sectional view showing the schematic structure of a micro semiconductor chip transfer substrate according to another embodiment.

[0090] The surface energy reducing pattern SP3 of the micro semiconductor chip transfer substrate 133 according to an embodiment may include a plurality of protruding patterns 126 formed by roughening the mold surface. Although the protruding pattern 126 is shown as being integral with the mold 110, one or more embodiments are not limited thereto. After forming a metal layer on the mold 110, the protruding pattern 126 may be formed by roughening the surface of the metal layer.

[0091] In Figures 1 to 7 In the micro semiconductor chip transfer substrates 130, 131, 132, and 133 shown, the micro semiconductor chips may be disposed in the plurality of recesses HO to form a display transfer structure to be applied to a display device.

[0092] Figure 8 FIG. is a schematic perspective view of a display transfer structure according to an embodiment, Figure 9 is Figure 8 an enlarged cross-sectional view of a part of

[0093] The display transfer structure 100 may include: a transfer substrate 130 including a mold 110 in which a plurality of recesses HO are formed and a surface energy reducing pattern SP formed on the upper surface of the mold 119; and a micro semiconductor chip 140 disposed in the recess HO.

[0094] The micro semiconductor chip 140 may include various semiconductor chips having a small size, and the small size may be 1000 μm or less, 200 μm or less, 100 μm or less, or 50 μm or less. The micro semiconductor chip 140 may include, for example, a light emitting diode (LED), a complementary metal oxide semiconductor (CMOS), a CMOS image sensor (CIS), a vertical cavity surface emitting laser (VCSEL), a photodiode (PD), a memory device, or a two-dimensional (2D) material device. The 2D material may be graphene or a carbon nanotube (CNT). In the following description, the micro semiconductor chip 140 may be described as an LED chip, but is not limited thereto.

[0095] Referring to Figure 9 As an example of the specific structure of the micro semiconductor chip 140 shown, the micro semiconductor chip 140 may include an n-type semiconductor layer 145, an active layer 146, or a p-type semiconductor layer 147. The n-type semiconductor layer 145 may include n-type GaN, and the p-type semiconductor layer 147 may include p-type GaN, but is not limited thereto. The active layer 146 may have, for example, a quantum well structure or a multi-quantum well structure. A first electrode 148 and a second electrode 149 may be disposed on the micro semiconductor chip 140. The first electrode 148 may be electrically connected to the n-type semiconductor layer 145, and the second electrode 149 may be electrically connected to the p-type semiconductor layer 147. The micro semiconductor chip 140 may have a horizontal electrode structure, and thus, as shown, the first electrode 148 and the second electrode 149 may be disposed on the same side of the semiconductor chip 140. The specific form of the micro semiconductor chip 140 is an example and is not limited thereto.

[0096] The cross-sectional shape of the micro semiconductor chip 140 is shown as circular, but is not limited thereto and may be, for example, rectangular.

[0097] Figure 10 is for explaining the process of Figure 8 the display transfer structure formed.

[0098] Figure 10 The state in which a plurality of micro semiconductor chips 140 are provided on a transfer substrate 130 is shown. The transfer substrate 130 includes a mold 110 including a recess HO and a protrusion pattern 120 formed on an outer surface 110a of the mold 110. The plurality of micro semiconductor chips 140 may be directly sprayed on the transfer substrate 130 after supplying a predetermined liquid to the recess HO of the transfer substrate 130, or may be supplied on the transfer substrate 130 when included in a predetermined suspension.

[0099] The liquid supplied to the recess HO can be any type of liquid (unless it corrodes or damages the micro semiconductor chip 140), and various methods such as spraying, dispensing, inkjet dotting, and flowing the liquid onto the transfer substrate 130 can be used. The liquid can include, for example, at least one or a combination of water, ethanol, alcohol, polyol, ketone, halogenated hydrocarbon, acetone, flux, and organic solvent. The organic solvent can include, for example, isopropyl alcohol (IPA).

[0100] The plurality of micro semiconductor chips 140 can be directly sprayed onto the transfer substrate 130 without other liquids, or can be supplied onto the transfer substrate 130 when included in a suspension.

[0101] The absorbent material 80 can scan the transfer substrate 130. Through this scanning, the absorbent material 80 can move the micro semiconductor chips 140 into the recess HO while contacting the transfer substrate 130 and passing through the plurality of recesses HO, and can absorb the liquid in the recess HO. A material capable of absorbing liquid is sufficient for the absorbent material 80, and the form or structure of the absorbent material 80 is not limited. The absorbent material 80 can include, for example, fabric, paper towel, polyester fiber, paper, wipe, etc. Although the absorbent material 80 can be used alone without other auxiliary devices, one or more embodiments are not limited thereto and can be coupled to the support 70 to facilitate the scanning of the transfer substrate 130. The support 70 can have various forms or structures suitable for scanning the transfer substrate 130. The support 70 can have, for example, the form of a load, blade, plate, or wipe. The absorbent material 80 can be provided on any one surface of the support 70, or can be wrapped around the support 70. The cross-sectional shape of the absorbent material 80 and the support 70 can not be limited to a square, but can also be circular.

[0102] The absorbent material 80 can scan the transfer substrate 130 while being pressed with appropriate pressure. The scanning can be performed by the absorbent material 80 through various methods such as a sliding method, a rotating method, a translational motion method, a reciprocating motion method, a rolling method, a self-rotating method, and / or a friction method, and can include both regular and irregular methods. The scanning can be performed by moving the transfer substrate 130 instead of the absorbent material 80, and the scanning of the transfer substrate 130 can also be performed by methods such as sliding, rotating, translational reciprocating, rolling, self-rotating, and / or friction. The scanning can also be performed through the cooperation of the absorbent material 80 and the transfer substrate 130.

[0103] Figure 11 is a micrograph showing the manufactured Figure 8 display transfer structure.

[0104] As can be seen, the micro semiconductor chip 140 is only inside the recess HO and does not remain in other positions. Such a manufacturing process is performed by changing the occupancy rate of the convex pattern 120 (i.e., the filling factor, which is the ratio of the area occupied by the convex pattern 120 to the total area connected to the outer surface 110a of the recess HO) to 25%, 45%, and 71%. The convex pattern 120 prevents the micro semiconductor chip 140 from being squeezed in other positions, thereby improving the sliding and dispersion efficiency. As a result, a cleaning state of 99.9% or higher is shown at positions not including the recess HO.

[0105] Figure 12 is a micrograph showing the manufactured display transfer structure according to the comparative example.

[0106] In the display transfer structure according to the comparative example (manufactured using a transfer substrate 130 that does not include the convex pattern 120), it can be seen that a plurality of micro semiconductor chips 140 remain on the surface of the transfer substrate 130 instead of in the recess HO.

[0107] In the above display transfer structure 100, although the mold 110 and the convex pattern 120 in the transfer substrate 130 are illustrated as including different materials, the mold 100 and the convex pattern 120 may include the same material and may be integrated.

[0108] Figure 13 is a schematic cross-sectional view of a display transfer structure according to another embodiment.

[0109] The display transfer structure 101 may include a transfer substrate 131 and a micro semiconductor chip 140 disposed in a recess HO of the transfer substrate 131. The transfer substrate 131 may be substantially similar to the transfer substrate shown. The transfer substrate 131 may be changed to the transfer substrate 131' shown. Figure 5a The transfer substrate shown. The transfer substrate 131 may be changed to Figure 5b the transfer substrate 131' shown.

[0110] Figure 14 is a schematic cross-sectional view of a display transfer structure according to another embodiment.

[0111] The display transfer structure 102 of the present embodiment may have a structure in which the micro semiconductor chip 140 is disposed in a recess HO of the transfer substrate 132 shown. Figure 6 The transfer substrate 132 shown.

[0112] Figure 15 is a schematic cross-sectional view of a display transfer structure according to another embodiment.

[0113] The display transfer structure 103 according to an embodiment may have a structure in which the micro semiconductor chip 140 is disposed in a recess HO of the transfer substrate 133 shown. Figure 7 The transfer substrate 133 shown.

[0114] The display transfer structures 100, 101, 102, and 103 described above can be applied to a display device using the micro semiconductor chips 140. The multiple micro semiconductor chips 140 provided in the display transfer structures 100, 101, 102, and 103 can include multiple LED chips that emit red light (R), green light (G), and blue light (B), or can include only multiple LED chips that emit blue light (B). Such display transfer structures 100, 101, 102, and 103 can be applied to a display device in which the multiple micro semiconductor chips 140 operate as individual pixels, such as an RGB self-emitting micro LED TV. In this case, the display transfer structures 100, 101, 102, and 103 can be used as a display device as a whole, or the micro semiconductor chips 140 provided on the display transfer structures 100, 101, 102, and 103 can be bonded and transferred (eutectic bonding) to a thin film transistor (TFT) substrate.

[0115] The display transfer structures 100, 101, 102, and 103 can each be directly used as a display substrate and constitute a display device. Figures 12 to 19 Each of the examples of also illustrates a display transfer structure that further includes an additional structure such that the display transfer structure can be used as a display substrate.

[0116] Figure 16 is a schematic cross-sectional view of a display transfer structure according to another embodiment.

[0117] The display transfer structure 104 of the present embodiment can have a form in which an additional material layer is further included in the Figure 1 display transfer structure 100 of.

[0118] The display transfer structure 104 can further include an insulating layer 170 formed inside the recess HO, and circuit elements 181 and 182 connected to the first electrode 148 and the second electrode 149 of the micro semiconductor chip 140. The circuit elements 181 and 182 can constitute a part of a driving circuit for driving the micro semiconductor chip 140.

[0119] Figure 17 is a schematic cross-sectional view of a display transfer structure according to another embodiment.

[0120] The display transfer structure 105 of the present embodiment is different from the display transfer structure 104 described above in that a circuit board 115 including a driving circuit for driving a micro semiconductor chip 140 serves as a transfer substrate 135. Circuit elements such as driving transistors, switching transistors, and capacitors can be provided inside the circuit board 115. A recess HO can be formed in the circuit board 115, and a plurality of protruding patterns 120 can be provided on an outer surface 115a of the circuit board 115 including the recess HO. Thus, the micro semiconductor chip 140 can be aligned inside the recess HO by a wet alignment method. Therefore, additional processes are minimized and the display transfer structure 105 can be used as a display device.

[0121] Figure 18 is a schematic cross-sectional view of a display transfer structure according to another embodiment.

[0122] The display transfer structure 106 of the present embodiment may include a circuit board 160 disposed under a transfer substrate 130. Circuit elements such as driving transistors, switching transistors, and capacitors can be provided in the circuit board 160, and the circuit elements of the circuit board 160 can be electrically connected to the micro semiconductor chip 140 through a conductive path 190 penetrating a mold 110.

[0123] Figures 16 to 18 The illustrated display transfer structures 104, 105, and 106 exemplify that additional structures are included in the Figure 8 display transfer structure 100, but the examples are not limited thereto and can be changed to structures in which additional structures are provided on the Figures 13 to 15 display transfer structures 101, 102, and 103 exemplified therein.

[0124] Figure 19 is a schematic cross-sectional view of a display device according to an embodiment.

[0125] The display device 1000 may include a display transfer structure 106 and a color conversion layer 1100 disposed on the display transfer structure 106. The display transfer structure 106 may include a mold 110 including a recess HO, a protruding pattern 120 formed on a surface of the mold 110, and a micro semiconductor chip 140 disposed in the recess HO.

[0126] Although the display transfer structure 106 is shown as exemplified in Figure 18 it, one or more embodiments are not limited thereto and can be changed to the Figure 16 display transfer structure 104, Figure 17 display transfer structure 105, or a modified form thereof.

[0127] A passivation layer 1005 including an insulating material may be disposed on the display transfer structure 106, and a color conversion layer 1100 may be disposed on the passivation layer 1005.

[0128] The color conversion layer 1100 may include a first color conversion layer 1100B configured to convert light from the micro semiconductor chip 140 into first color light, a second color conversion layer 1100G configured to convert light into second color light, and a third color conversion layer 1100R configured to convert light into third color light. The first color light may be, for example, blue light, the second color light may be, for example, green light, and the third color light may be, for example, red light. The first color conversion layer 1100B, the second color conversion layer 1100G, and the third color conversion layer 1100R may be spaced apart from each other such that the partition walls 1110 are therebetween, and each layer may be disposed to face the micro semiconductor chip 140.

[0129] When the micro semiconductor chip 140 emits blue light, the first color conversion layer 1100B may include a resin that transmits blue light. The second color conversion layer 1100G may convert the blue light emitted from the micro semiconductor chip 140 to emit green light. The second color conversion layer 1100G may include: quantum dots (QDs) excited by the blue light from the micro semiconductor chip 140 to emit green light; or phosphors. The third color conversion layer 1100R may convert the blue light emitted from the micro semiconductor chip 140 to emit red light. The third color conversion layer 1100R may include: QDs excited by the blue light emitted from the micro semiconductor chip 140 to emit red light; or phosphors.

[0130] The QDs included in the second color conversion layer 1100G and the third color conversion layer 1100R may have a core-shell structure having a core portion and a shell portion, or may have a particle structure without a shell. The core-shell structure may be a single-shell structure or a multi-shell structure, such as a double-shell structure. The QDs may include II-VI group semiconductors, III-V group semiconductors, IV-VI group semiconductors, IV group semiconductors, and / or graphene QDs. The QDs may include, for example, Cd, Se, Zn, S, and / or InP, and each QD may have a diameter of less than several tens of nm or smaller (e.g., about 10 nm or smaller). The QDs included in the second color conversion layer 1100G and the third color conversion layer 1100R may have different sizes.

[0131] The cover layer 1200 may be disposed on the color conversion layer 1100, and the color filter layer 1300 may be disposed on the cover layer 1200. The color filter layer 1300 may include a first color filter 1300B, a second color filter 1300G, and a third color filter 1300R, which are spaced apart from each other with the black matrix 1310 therebetween. The first color filter 1300B, the second color filter 1300G, and the third color filter 1300R may be arranged to face the first color conversion layer 1100B, the second color conversion layer 1100G, and the third color conversion layer 1100R, respectively. The first color filter 1300B, the second color filter 1300G, and the third color filter 1300R may each transmit blue light, green light, and red light and absorb light of other colors. The color filter layer 1300 may be omitted. When the color filter layer 1300 is provided, the light that is not color-converted emitted from the second color conversion layer 1100G (i.e., light other than green light) or the light that is not color-converted emitted from the third color conversion layer 1100R (i.e., light other than red light) may each be filtered in the second color filter 1300G and the third color filter 1300R, thereby improving color purity.

[0132] A protective substrate 1400 made of a transparent material may be disposed on the color conversion layer 1100.

[0133] Unlike Figures 16 to 19 the description of, the micro semiconductor chips 140 provided on the display transfer structures 100, 101, 102, and 103 may be transferred to the display substrate and then applied to the display device.

[0134] Figure 20 Illustrated is that the micro semiconductor chips provided on the display transfer structure are transferred to the display substrate.

[0135] As shown, the display transfer structure 100 may be used as a transfer mold for transferring the micro semiconductor chips 140 to another position. The micro semiconductor chips 140 may be transferred by being bonded to a display substrate 165 that includes a driving circuit (such as a TFT) for driving the micro semiconductor chips 140. Since the micro semiconductor chips 140 are properly positioned within the recess HO by the protrusion pattern 120 formed on the outer surface 110a of the mold 110 including the recess HO, the micro semiconductor chips 140 may be properly transferred to a predetermined position on the display substrate 165. After the micro semiconductor chips 140 are bonded and transferred to the display substrate 165, the display device may be completed through additional processes. Although the display transfer structure 100 is illustrated in Figure 20 , the display transfer structures 101, 102, and 103 may be used as transfer molds. By using the display transfer structures 100, 101, 102, and 103, the manufacturing yield of the display device can be improved.

[0136] Figure 21 is a schematic cross-sectional view of a display device according to another embodiment.

[0137] A display device 1001 according to an example may include a display substrate 165 including a driving circuit and a micro semiconductor chip 140 transferred from a display transfer structure 100 to the display substrate 165 as shown. Figure 20 The micro semiconductor chip 140 may have the horizontal electrode structure as described above, and the first electrode 148 and the second electrode 149 may be arranged on the same side of the micro semiconductor chip 140.

[0138] The display substrate 165 may include a driving circuit including transistors, capacitors, etc., and a first circuit E1 and a second circuit E2 connected to the driving circuit may be formed on the display device 165. When the micro semiconductor chip 140 is transferred, the first electrode 148 may be connected to the first circuit E1, and the second electrode 149 may be connected to the second circuit E2.

[0139] A first color conversion layer 1100B, a second color conversion layer 1100G, and a third color conversion layer 1100R may be arranged on the micro semiconductor chip 140. The first color conversion layer 1100B, the second color conversion layer 1100G, and the third color conversion layer 1100R may be layers that form colors by converting the wavelength of light generated from the micro semiconductor chip 140, and may be substantially similar to

[0140] the color conversion layer. Although not shown in the drawings, the display device 1001 may further include a color filter layer and a protection substrate as in the display device 1000 as shown. Figure 19 Figure 19 the color conversion layer. Although not shown in the drawings, the display device 1001 may further include a color filter layer and a protection substrate as in the display device 1000 as shown.

[0141] Figure 22 is a schematic cross-sectional view of a display device according to another embodiment.

[0142] Figure 20 The micro semiconductor chip 150 in the display device 1002 of the present embodiment may have a vertical electrode structure. The micro semiconductor chip 150 may include an n-type semiconductor layer 155, an active layer 156, or a p-type semiconductor layer 157. The first electrode 158 and the second electrode 159 may be arranged above and below the micro semiconductor chip 150. The first electrode 158 may be electrically connected to the n-type semiconductor layer 155, and the second electrode 159 may be electrically connected to the p-type semiconductor layer 157. In Figure 20In the transfer process exemplified, the micro semiconductor chip 140 provided on the display transfer structure 100 can be changed to a micro semiconductor chip 150, and the micro semiconductor chip 150 can be transferred to the display substrate 165 through the display transfer structure 100. When transferring the micro semiconductor chip 150, the first electrode 158 can be connected to the first circuit E1, and the second electrode 159 can be connected to the second circuit E2. The insulating layer 170 can be provided on the display substrate 165 including the driving circuit, and the first electrode 158 and the first circuit E1 can be connected through a conductive path passing through the insulating layer 170.

[0143] The first color conversion layer 1100B, the second color conversion layer 1100G, and the third color conversion layer 110R (each facing each of the plurality of micro semiconductor chips 140) can be provided on the plurality of micro semiconductor chips 140. The first color conversion layer 1100B, the second color conversion layer 1100G, and the third color conversion layer 110R are substantially similar to Figure 19 the color conversion layers. Although not shown in the drawings, the display device 1002 may also include a color filter layer and a protective substrate as in Figure 19 the display device 1000.

[0144] Figure 23 is a flowchart schematically showing a method of manufacturing a display device according to an embodiment.

[0145] First, a micro semiconductor chip transfer substrate including a surface energy reduction pattern and a plurality of recesses can be prepared, such as S2100. For example, the micro semiconductor chip transfer substrates 130, 131, 132, and 133 described in Figures 1 to 7 or any structure modified therefrom can be used.

[0146] Then, in step S2200, a plurality of micro semiconductor chips can be provided on the prepared micro semiconductor chip transfer substrate, and in step S2300, a display transfer structure can be formed by aligning the micro semiconductor chips in the recesses. The FSA method described in Figure 10 can be used. Through the surface energy reduction pattern provided on the micro semiconductor chip transfer substrate, the micro semiconductor chips can be easily moved into the recesses without adhering to the upper surface of the mold. The display transfer structures 100, 101, 102, and 103 described in Figures 8 to 15 or any structure modified therefrom can be formed.

[0147] In step S2400, the manufactured display transfer structure can be directly used as a display substrate, or in step S2500, a process for forming additional structures can be performed. When the display transfer structure is directly used as a display substrate, a driving circuit can be provided in advance on the micro semiconductor chip transfer substrate. After the micro semiconductor chips are aligned on the micro semiconductor chip transfer substrate to form a display transfer structure, the display transfer structure can be connected to the driving circuit substrate. Connecting the micro semiconductor chips to the driving circuit and forming a passivation layer and a color conversion layer can be further performed.

[0148] In step S2500, the micro semiconductor chips can be transferred to a separate display substrate provided with a driving circuit. Such a method is similar to Figure 20 the method described in. In step S2800, additional structures can also be formed on the display substrate on which the micro semiconductor chips are transferred. For example, connecting the micro semiconductor chips to the driving circuit and forming a passivation layer and a color conversion layer can be further performed.

[0149] According to the above operations, Figure 19 、 Figure 21 and Figure 22 display devices 1000, 1001, and 1002 can be manufactured. Figure 16 FIG. is a schematic block diagram showing an electronic device according to an embodiment.

[0150] Referring to Figure 16 , the electronic device 8201 can be provided in a network environment 8200. In the network environment 8200, the electronic device 8201 can communicate with another electronic device 8202 through a first network 8298 (such as near field communication) or can communicate with another electronic device 8204 and / or a server 8208 through a second network 8299 (such as far field communication). The electronic device 8201 can communicate with the electronic device 8204 through the server 8208. The electronic device 8201 can include a processor 8220, a memory 8230, an input device 8250, a sound output device 8255, a display device 8260, and an audio module 8270, a sensor module 8276, an interface 8277, a haptic module 8279, a camera module 8280, a power management module 8288, a battery 8289, a communication module 8290, a user identification module 8296, and / or an antenna module 8297. In the electronic device 8201, some of these components can be excluded, or other components can be added. Some of these components can be implemented as an integrated circuit. For example, the sensor module 8276 (such as a fingerprint sensor, an iris sensor, an illuminance sensor, etc.) can be embedded in the display device 8260 (such as a display).

[0151] The processor 8220 may execute software (program 8240) to control one or more other components (hardware, software components, etc.) in the electronic device 8201 connected to the processor 8220, and various data processing or operations may be performed. As part of the data processing or operations, the processor 8220 may load commands and / or data received from other components (sensor module 8276, communication module 8290, etc.) into the volatile memory 8232, process the commands and / or data stored in the volatile memory 8232, and store the resulting data in the non-volatile memory 8234. The processor 8220 may include a main processor 8221 (central processing unit, application processor, etc.) and an auxiliary processor 8223 (graphics processing device, image signal processor, sensor hub processor, communication processor, etc.), and the auxiliary processor 8223 may be used independently or in conjunction with the main processor 8221. The auxiliary processor 8223 may use less power than the main processor 8221 and may perform specialized functions.

[0152] When the main processor 8221 is in an inactive state (sleep state), the auxiliary processor 8223 may control functions and / or states related to some components of the electronic device 8201 instead of the main processor 8221, or when the main processor 8221 is in an active state (application execution state), it may control functions and / or states related to some components of the electronic device 8201 together with the main processor 8221. The auxiliary processor 8223 (image signal processor, communication processor, etc.) may be implemented as part of another function-related component (camera module 8280, communication module 8290, etc.).

[0153] The memory 8230 may store various data required by components of the electronic device 8201 (processor 8220, sensor module 8276). The data may include, for example, software (program 8240, etc.) and input data and / or output data regarding commands related thereto. The memory 8230 may include a volatile memory 8232 and / or a non-volatile memory 8234.

[0154] The program 8240 may be stored in the memory 8230 as software and may include an operating system 8242, middleware 8244, and / or applications 8246.

[0155] The input device 8250 may receive commands and / or data to be used in components of the electronic device 8201 (processor 8220, etc.) from outside the electronic device 8201 (user, etc.). The input device 8250 may include a remote control, microphone, mouse, keyboard, and / or digital pen (stylus).

[0156] The sound output device 8255 can output a sound signal to the outside of the electronic device 8201. The sound output device 8255 can include a speaker and / or a receiver. The speaker can be used for general purposes such as multimedia playback or recording playback, and the receiver can be used for answering incoming calls. The receiver can be incorporated as part of the speaker or implemented as a separate stand-alone device.

[0157] The display device 8260 can visually provide information to the outside of the electronic device 8201. The display device 8260 can include a display, a holographic device or a projector, and a control circuit for controlling the corresponding device. The display device 8260 can be the display device 1000 described with reference to Figure 19 , Figure 20 and Figure 21 , or can be a display device including the display transfer structure shown in Figure 8 , Figure 9 and Figures 13 to 18 . The display device 8260 can include a touch circuit set to sense a touch and / or a sensor circuit (such as a pressure sensor) set to measure the intensity of the force generated by the touch.

[0158] The audio module 8270 can convert sound into an electrical signal, or convert an electrical signal into sound. The audio module 8270 can obtain sound through the input device 8250, or can print sound through a speaker and / or headphones of another electronic device (such as the electronic device 8202) directly or wirelessly connected to the sound output device 8255 and / or the electronic device 8201.

[0159] The sensor module 8276 can sense the operating state (power, temperature, etc.) of the electronic device 8201 or the external environmental state (user state, etc.) and can generate an electrical signal and / or a data value corresponding to the sensed state. The sensor module 8276 can include a gesture sensor, a gyro sensor, a pressure sensor, a magnetic sensor, an acceleration sensor, a grip sensor, a proximity sensor, a color sensor, an infrared (IR) sensor, a biometric sensor, a temperature sensor, a humidity sensor, and / or an illuminance sensor.

[0160] The interface 8277 can support one or more predetermined protocols, which can be used to directly or wirelessly connect the electronic device 8201 to another electronic device (such as the electronic device 8202). The interface 8277 can include a high-definition multimedia interface (HDMI), a universal serial bus (USB) interface, an SD card interface, and / or an audio interface.

[0161] The connection end 8278 may include a connector that can physically connect the electronic device 8201 to another electronic device (such as the electronic device 8202). The connection end 8278 may include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (such as a headphone connector).

[0162] The haptic module 8279 may convert an electrical signal into a mechanical signal (such as vibration, movement, etc.) that can be recognized by a user through touch or kinesthesia. The haptic module 8279 may include a motor, a piezoelectric effect element, and / or an electrical stimulation device.

[0163] The camera module 8280 may capture still images and movies. The camera module 8280 may include a lens assembly including one or more lenses, an image sensor, an image signal processor, and / or a flash. The lens assembly included in the camera module 8280 may collect light emitted from an object for image capture.

[0164] The power management module 8288 may manage the power supplied to the electronic device 8201. The power management module 8288 may be implemented as part of a power management integrated circuit (PMIC).

[0165] The battery 8289 may supply power to the components of the electronic device 8201. The battery 8289 may include a non-rechargeable primary battery, a rechargeable secondary battery, and / or a fuel cell.

[0166] The communication module 8290 may support establishing a direct (wired) communication channel and / or a wireless communication channel between the electronic device 8201 and another electronic device (such as the electronic devices 8202 and 8204, the server 8208, etc.) and communicating through the established communication channel. The communication module 8290 may operate independently of the processor 8220 (such as an application processor) and may include one or more communication processors that support direct communication and / or wireless communication. The communication module 8290 may include a wireless communication module 8292 (such as a cellular communication module, a near-field communication module, a global navigation satellite system (GNSS) communication module, etc.) and / or a wired communication module 8294 (such as a local area network (LAN) communication module, a power line communication module, etc.). Among these communication modules, the corresponding communication module may communicate with another electronic device through the first network 8298 (a near-field communication network, such as Bluetooth, Wifi Direct, or Infrared Data Association (IrDA)) or the second network 8299 (a far-field communication network, such as a cellular network, the Internet, or a computer network (local area network (LAN), wide area network (WAN), etc.)). Various types of communication modules may be integrated into one component (such as a single chip) or may be implemented by multiple components (multiple chips) separated from each other. The wireless communication module 8292 may use the user information (such as the International Mobile Subscriber Identity (IMSI)) stored in the user identification module 8296 to check and verify the electronic device 8201 in a communication network such as the first network 8298 and / or the second network 8299.

[0167] The antenna module 8297 may transmit signals and / or power to the outside (such as another electronic device) or receive signals and / or power from the outside. The antenna may include a radiator composed of a conductive pattern formed on a substrate (such as a printed circuit board (PCB)). The antenna module 8297 may include one or more antennas. When multiple antennas are included, the communication module 8290 may select an antenna suitable for the communication method to be used in a communication network (such as the first network 8298 and / or the second network 8299) among the multiple antennas. Through the selected antenna, signals and / or power may be transmitted or received between the communication module 8290 and another device. In addition to the antenna, other components (such as a radio frequency integrated circuit (RFIC)) may also be included as part of the antenna module 8297.

[0168] Some of the components may be interconnected with each other through a communication method (such as a bus, general-purpose input and output (GPIO), serial peripheral interface (SPI), mobile industry processor interface (MIPI), etc.) between the surrounding devices and may exchange signals (such as commands, data, etc.).

[0169] Commands or data can be sent or received between the electronic device 8201 and an external electronic device 8204 via a server 8208 connected to a second network 8299. The other electronic devices 8202 and 8204 can be the same as or different from the electronic device 8201. All or part of the operations performed in the electronic device 8201 can be performed in one or more of the other electronic devices (i.e., the electronic device 8202, the electronic device 8204, and the server 8208). For example, when the electronic device 8201 needs to perform a function or service, the electronic device 8201 can request one or more of the other electronic devices to perform some or all of the function or service, rather than performing the function or service itself. One or more of the other electronic devices that receive the request can perform additional functions or services related to the request and send the execution result to the electronic device 8201. To this end, cloud computing, distributed computing, and / or client-server computing technologies can be used.

[0170] The display device according to an embodiment can also be applied to a mobile device, a vehicle, a head-up display, an augmented / virtual reality device, a large sign, a wearable display, a rollable TV, a stretchable display, and the like.

[0171] It should be understood that the embodiments described herein should be considered only in a descriptive sense and not for purposes of limitation. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those of ordinary skill in the art will understand that various changes in form and detail can be made therein without departing from the spirit and scope defined by the following claims.

Claims

1. A micro semiconductor chip transfer substrate, comprising: a mold including a plurality of recesses formed to recess from an upper surface by a certain depth; and a surface energy reducing pattern formed on the upper surface in a region between the plurality of recesses, the surface energy reducing pattern including a plurality of uneven patterns, wherein a spacing between adjacent uneven patterns among the plurality of uneven patterns is defined as s, satisfying the condition: s < (w1 - w2) / 2 wherein, w1 and w2 respectively refer to the width of each recess and the width of each uneven pattern.

2. The micro semiconductor chip transfer substrate according to claim 1, wherein the width of each of the plurality of uneven patterns is 50% or less of the width of each of the plurality of recesses.

3. The micro semiconductor chip transfer substrate according to claim 1, wherein the surface energy reducing pattern includes a plurality of protruding patterns protruding upward from the upper surface.

4. The micro semiconductor chip transfer substrate according to claim 3, wherein the plurality of protruding patterns include a material different from that of the mold.

5. The micro semiconductor chip transfer substrate according to claim 3, wherein the plurality of protruding patterns include a metal material.

6. The micro semiconductor chip transfer substrate according to claim 3, wherein the surface energy reducing pattern further includes a filling pattern, the filling pattern including a material different from that of the plurality of protruding patterns and filling a region between the plurality of protruding patterns.

7. The micro semiconductor chip transfer substrate according to claim 1, wherein the surface energy reducing pattern and the mold are integrally formed of the same material.

8. The micro semiconductor chip transfer substrate according to claim 7, wherein the surface energy reducing pattern includes a plurality of recessed patterns recessed from the upper surface of the mold to a lower portion.

9. The micro semiconductor chip transfer substrate according to claim 8, wherein the recessed depth of each of the plurality of recessed patterns is less than the depth of each of the plurality of recesses.

10. A display transfer structure, comprising: the micro semiconductor chip transfer substrate according to any one of claims 1 to 9; and a micro semiconductor chip disposed on any one of the plurality of recesses.

11. The display transfer structure according to claim 10, wherein the width of each uneven pattern is 50% or less of the width of the micro semiconductor chip.

12. The display transfer structure according to claim 10, wherein the spacing between adjacent uneven patterns among the plurality of uneven patterns is defined as s, satisfying the condition: s ≤ (w3 - w2) / 2 wherein, w3 and w2 respectively refer to the width of the micro semiconductor chip and the width of each uneven pattern.

13. The display transfer structure according to claim 10, further comprising a driving circuit configured to drive the micro semiconductor chip.

14. The display transfer structure according to claim 13, wherein the driving circuit is disposed inside the micro semiconductor chip transfer substrate.

15. The display transfer structure according to claim 13 further includes a circuit board, which is disposed under the micro semiconductor chip transfer substrate and includes the driving circuit.

16. A display device, comprising: the display transfer structure according to claim 10; a driving circuit configured to drive the micro semiconductor chip; and a color conversion layer disposed on the transfer substrate.

17. An electronic device includes the display device according to claim 16.

18. A method of manufacturing a display device, the method comprising: aligning a micro semiconductor chip in a plurality of recesses of the micro semiconductor chip transfer substrate according to claim 1; and transferring the micro semiconductor chip onto a display substrate, the display substrate including a driving circuit configured to drive the micro semiconductor chip.

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