Display panel, display device, and method for manufacturing display panel

Abstract

The present application provides a display panel, a display device and a method for manufacturing a display panel, wherein an auxiliary electrode is arranged on a first metal layer, a conductive unit is arranged on a first electrode layer, a first opening is opened on an insulating layer, and an organic light-emitting layer is divided into a first section located on a side of the first electrode layer away from a substrate, and a second section arranged on the auxiliary electrode, and the thickness of the second section is less than the thickness of the conductive unit, so that the second electrode layer can be electrically connected to the auxiliary electrode through the conductive unit, and structures for reducing current voltage drop such as the auxiliary electrode, the conductive unit, the first opening and the second section are arranged on the same layer as the functional film layers of the display panel. On the basis of reducing the current voltage drop of the second electrode layer and ensuring uniform display brightness of the display panel, no additional manufacturing process is required, thereby saving production costs.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel, a display device, and a method for manufacturing a display panel. Background Art

[0002] With the development of organic light-emitting diode (OLED) display technology, large-size OLED display panels have attracted widespread attention.

[0003] Currently, in order to reduce the impedance of the metal cathode in large-size OLED display panels and avoid uneven brightness in the OLED display panels, an undercut structure is usually used to overlap the auxiliary electrode and the metal cathode. However, this undercut structure generally requires at least one new process step in the original display panel manufacturing process, increasing the overall process complexity and production cost of the display panel. Summary of the Invention

[0004] The embodiments of the present application provide a display panel, a display device, and a method for manufacturing a display panel to solve the technical problems of the existing OLED display panels, such as the complex manufacturing process and high production cost, in order to reduce the current voltage drop.

[0005] An embodiment of the present application provides a display panel, comprising:

[0006] substrate;

[0007] a thin film transistor layer disposed on the substrate, the thin film transistor layer comprising a first metal layer and an insulating layer disposed on the first metal layer, the first metal layer comprising an auxiliary electrode, and the insulating layer comprising a first opening corresponding to the auxiliary electrode;

[0008] a first electrode layer disposed on the insulating layer, the first electrode layer comprising a plurality of first electrodes and conductive units spaced apart from the first electrodes, the insulating layer comprising via holes spaced apart from the first openings, the first electrodes passing through the via holes being electrically connected to the first metal layer;

[0009] an organic light-emitting layer, disposed on a side of the first electrode layer away from the substrate;

[0010] a second electrode layer, disposed on a side of the organic light-emitting layer away from the substrate;

[0011] In which, the conductive unit is at least arranged at the bottom of the first opening and is electrically connected to the auxiliary electrode, the conductive unit includes an opening located in the first opening, the organic light-emitting layer includes a first segment located on the side of the first electrode layer away from the substrate, and a second segment arranged on the auxiliary electrode and located in the opening, the thickness of the second segment is less than the thickness of the conductive unit, the first segment and the second segment are arranged at intervals, the second electrode layer is arranged on the first segment, the second segment and the conductive unit, and the second electrode layer is electrically connected to the side of the conductive unit close to the second segment.

[0012] In the display panel provided in the embodiment of the present application, the display panel also includes a pixel definition layer arranged on the first electrode layer and the insulating layer, the pixel definition layer includes a plurality of pixel openings and a second opening spaced apart from the pixel openings, the second opening is connected to the first opening, and the second electrode layer is electrically connected to the side of the conductive unit near the second segment through the first opening and the second opening.

[0013] In the display panel provided in an embodiment of the present application, the area of the second opening is larger than the area of the first opening, the conductive unit includes a first conductive portion disposed on the insulating layer and located within the second opening, and a second conductive portion extending from the first conductive portion to the bottom of the first opening, and the opening is formed on the second conductive portion;

[0014] The first conductive portion is spaced apart from the pixel definition layer, the first segment includes a first sub-segment arranged on the conductive unit, and a second sub-segment arranged on the pixel definition layer and the first electrode, the first sub-segment and the second sub-segment are spaced apart, the second electrode layer is arranged on the first sub-segment, the second sub-segment and the conductive unit, and the second electrode layer is electrically connected to the side of the first conductive portion close to the second sub-segment.

[0015] In the display panel provided in the embodiment of the present application, the conductive unit includes a first conductive sublayer, a metal sublayer disposed on the first conductive sublayer, and a second conductive sublayer disposed on the metal sublayer;

[0016] The metal sublayer includes a body segment located between the first conductive sublayer and the second conductive sublayer, and an extension segment protruding from a side of the conductive unit, and the second electrode layer is electrically connected to the extension segment.

[0017] In the display panel provided in the embodiment of the present application, the thickness of the second segment is smaller than the thickness of the first conductive sub-layer, and the second segment is spaced apart from the conductive unit.

[0018] In the display panel provided in the embodiment of the present application, the thin film transistor layer includes a plurality of thin film transistors, and the first metal layer includes source electrodes and drain electrodes of the thin film transistors.

[0019] In the display panel provided in the embodiment of the present application, in a direction perpendicular to the substrate, a depth of the first opening is 3 μm to 6 μm.

[0020] In the display panel provided in the embodiment of the present application, the included angle between the sidewall of the first opening and the bottom surface of the first opening is 90° to 100°.

[0021] An embodiment of the present application provides a method for manufacturing a display panel, comprising the following steps:

[0022] Providing a substrate, forming a thin film transistor layer on the substrate, the thin film transistor layer including a first metal layer and an insulating layer formed on the first metal layer, the first metal layer including an auxiliary electrode, the insulating layer including a first opening corresponding to the auxiliary electrode, and a via hole spaced apart from the first opening;

[0023] forming a first electrode layer on the insulating layer, the first electrode layer comprising a plurality of first electrodes and a conductive unit spaced apart from the first electrodes, the first electrodes being electrically connected to the first metal layer through the via holes, the conductive unit being formed at least at the bottom of the first opening and being electrically connected to the auxiliary electrode, the conductive unit comprising an opening formed in the first opening;

[0024] forming an organic light-emitting layer on a side of the first electrode layer away from the substrate, the organic light-emitting layer comprising a first segment formed on a side of the first electrode layer away from the substrate, and a second segment formed on the auxiliary electrode and located within the opening, the second segment having a thickness less than a thickness of the conductive unit, and the first segment and the second segment being spaced apart;

[0025] A second electrode layer is formed on a side of the organic light-emitting layer away from the substrate. The second electrode layer is formed on the first segment, the second segment and the conductive unit, and is electrically connected to a side of the conductive unit close to the second segment.

[0026] An embodiment of the present application provides a display device, comprising the display panel in any of the above embodiments.

[0027] The beneficial effects of the present application are as follows: the present application provides a display panel, a display device and a method for manufacturing a display panel, by arranging an auxiliary electrode on a first metal layer, arranging a conductive unit on a first electrode layer, and opening a first opening on an insulating layer, and combining the division of the organic light-emitting layer into a first segment located on a side of the first electrode layer away from the substrate, and a second segment arranged on the auxiliary electrode, and the thickness of the second segment is less than the thickness of the conductive unit, so that the second electrode layer can be electrically connected to the auxiliary electrode through the conductive unit, and the structures for reducing the current voltage drop such as the auxiliary electrode, the conductive unit, the first opening and the second segment are arranged on the same layer as the functional film layers of the display panel. On the basis of reducing the current voltage drop of the second electrode layer and ensuring uniform display brightness of the display panel, no additional manufacturing process is required, thereby saving production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0029] Figure 1 Schematic diagram of the cross-sectional structure of a display panel adopting an Undercut structure;

[0030] Figure 2 This is a schematic diagram of a first cross-sectional structure of a display panel provided in an embodiment of the present application;

[0031] Figure 3 This is a schematic diagram of a second cross-sectional structure of a display panel provided in an embodiment of the present application;

[0032] Figure 4 for Figure 3 A partial enlarged view at point C;

[0033] Figure 5 This is a schematic diagram of a third cross-sectional structure of a display panel provided in an embodiment of the present application;

[0034] Figure 6 for Figure 5 A local enlarged view at point D;

[0035] Figure 7 A schematic flow chart of a method for manufacturing a display panel according to an embodiment of the present application;

[0036] Figures 8-13 A schematic structural diagram of a method for manufacturing a display panel provided in an embodiment of the present application.

[0037] 1-substrate, 10-thin film transistor layer, 21-light shielding portion, 22-first electrode plate, 2-buffer layer, 31-semiconductor, 32-second electrode plate, 410-gate insulating layer, 510-gate, 3-interlayer insulating layer, 41-auxiliary electrode, 42-drain, 43-source, 44-test electrode, 4-first metal layer, 51-passivation layer, 52-flat layer, 5-insulating layer, 501-first opening, 502-via, 6-first electrode layer, 61-conductive unit, 62-first electrode, 611-opening, 612-first conductive portion, 613-second conductive portion, 610 1-first conductive sublayer, 6102-metal sublayer, 6103-second conductive sublayer, 6112-main body segment, 6122-extension segment, 601-cavity, 602-gap, 7-pixel definition layer, 711-pixel opening, 712-second opening, 8-organic light-emitting layer, 81-first segment, 82-second segment, 811-first subsegment, 812-second subsegment, 9-second electrode layer, A-first side, B-second side, L1-thickness of the first conductive sublayer, L2-thickness of the second segment, L3-depth of the first opening, a-angle between the sidewall of the first opening and the bottom of the first opening. DETAILED DESCRIPTION

[0038] The following will be combined with the accompanying drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only one group of embodiments of the present application, not the entire group of embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making any creative efforts are within the scope of protection of the present application. In addition, it should be understood that the specific embodiments described herein are only used to illustrate and explain the present application and are not intended to limit the present application. In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc., indicating directions or positional relationships, are based on the directions or positional relationships shown in the accompanying drawings and are only for the convenience of describing the present application and simplifying the description. They do not indicate or imply that the devices or components referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be understood as limiting the present application. In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Thus, features defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, "plurality" means two or more, unless otherwise clearly defined.

[0039] The embodiments of the present application provide a display panel, a display module, and a method for manufacturing a display panel. Each of these is described in detail below. It should be noted that the order in which the following embodiments are described does not limit the preferred order of the embodiments.

[0040] See Figure 2 and Figure 11 , an embodiment of the present application provides a display panel, including a substrate 1, a thin film transistor layer 10, a first electrode layer 6, an organic light-emitting layer 8, and a second electrode layer 9; the thin film transistor layer is arranged on the substrate 1, the thin film transistor layer includes a first metal layer 4 and an insulating layer 5 arranged on the first metal layer 4, the first metal layer 4 includes an auxiliary electrode 41, and the insulating layer 5 includes a first opening 501 corresponding to the auxiliary electrode 41; the first electrode layer 6 is arranged on the insulating layer 5, the first electrode layer 6 includes a plurality of first electrodes 62 and a conductive unit 61 spaced apart from the first electrode 62, the insulating layer 5 includes a via 502 spaced apart from the first opening 501, the first electrode 62 is electrically connected to the first metal layer 4 through the via 502; the organic light-emitting layer 8 is arranged away from the first electrode layer 6 side of the substrate 1; the second electrode layer 9 is arranged on the side of the organic light-emitting layer 8 away from the substrate 1; wherein the conductive unit 61 is arranged at least at the bottom of the first opening 501 and is electrically connected to the auxiliary electrode 41, the conductive unit 61 includes an opening 611 located in the first opening 501, the organic light-emitting layer 8 includes a first segment 81 located on the side of the first electrode layer 6 away from the substrate 1, and a second segment 82 arranged on the auxiliary electrode 41 and located in the opening 611, the thickness of the second segment 82 is less than the thickness of the conductive unit 61, the first segment 81 and the second segment 82 are spaced apart, the second electrode layer 9 is arranged on the first segment 81, the second segment 82 and the conductive unit 61, and the second electrode layer 9 is electrically connected to the side of the conductive unit 61 close to the second segment 82.

[0041] It is understandable that with the development of OLED display technology, large-size OLED display panels have received widespread attention. At present, in order to reduce the impedance of the metal cathode in large-size OLED display panels and avoid uneven brightness of OLED display panels, an undercut structure is usually used to overlap the auxiliary electrode and the metal cathode. However, this undercut structure generally requires at least one new process in the original display panel manufacturing process. For example, see Figure 1In the patent (CN113097408 A), an auxiliary electrode layer is prepared on the protective layer 111. The auxiliary electrode layer includes a first conductive layer 201 and a second conductive layer stacked in sequence. The first conductive layer 201 and the second conductive layer are prepared by different masks, and then the second conductive layer is etched away to form an Undercur structure-cavity 207, which facilitates the electrical connection between the cathode layer 214 and the first conductive layer 201 to achieve the effect of reducing the current voltage drop. The use of the new mask process to produce the Undercut structure significantly increases the overall process complexity and production cost of the display panel; in the embodiment of the present application, the auxiliary electrode 41 is arranged on the first metal layer 4, the conductive unit 61 is arranged on the first electrode layer 6, and the first opening 501 is opened in the insulating layer 5 In combination with dividing the organic light-emitting layer 8 into the first segment 81 located on the side of the first electrode layer 6 away from the substrate 1, and the second segment 82 arranged on the auxiliary electrode 41, and the thickness of the second segment 82 is less than the thickness of the conductive unit 61, so that the second electrode layer 9 can be electrically connected to the auxiliary electrode 41 through the conductive unit 61, and the structures for reducing the current voltage drop such as the auxiliary electrode 41, the conductive unit 61, the first opening 501 and the second segment 82 are arranged in the same layer as the functional film layers of the display panel. On the basis of reducing the current voltage drop of the second electrode layer 9 and ensuring uniform display brightness of the display panel, no additional manufacturing process is required, thereby saving production costs.

[0042] It should be noted that the side of the conductive unit 61 close to the second segment 82 is set as the first side A, and the organic light-emitting layer 8 includes the first segment 81 and the second segment 82 arranged at intervals, and the second segment 82 is smaller than the thickness of the conductive unit 61, that is, the film layer of the second segment 82 cannot completely cover the first side A, and part of the first side A must be exposed in the opening 611. At the same time, the second electrode layer 9 is arranged on the first segment 81, the second segment 82 and the conductive unit 61, that is, the second electrode layer 9 is electrically connected to the uncovered part of the first side A, thereby realizing the electrical connection between the second electrode layer 9 and the auxiliary electrode 41.

[0043] It is worth noting that the first electrode 62 can be an anode and the second electrode layer 9 can be a cathode; the first metal layer 4 can also include a source 43 and a drain 42, and the first electrode 62 can be connected to the source 43 of the first metal layer 4 through the via 502. The auxiliary electrode 41 can be produced using the same manufacturing process as the source 43 and the drain 42 of the thin film transistor layer 10, the first opening 501 can be produced using the same manufacturing process as the via 502, and the conductive unit 61 can be produced using the same manufacturing process as the first electrode 62, without the need for additional manufacturing processes.

[0044] In some embodiments, see Figure 2 and Figure 12 The display panel also includes a pixel definition layer 7 arranged on the first electrode layer 6 and the insulating layer 5, the pixel definition layer 7 includes a plurality of pixel openings 711 and a second opening 712 spaced apart from the pixel opening 711, the second opening 712 is connected to the first opening 501, and the second electrode layer 9 is electrically connected to the side of the conductive unit 61 near the second segment 82 through the first opening 501 and the second opening 712.

[0045] It can be understood that the pixel definition layer 7 is located above the first electrode layer 6 and the insulating layer 5, and below the organic light-emitting layer 8. The pixel definition layer 7 includes a plurality of pixel openings 711 and second openings 712 spaced apart from the plurality of pixel openings 711. The second openings 712 are connected to the first openings 501, and the projection of the conductive unit 61 on the pixel definition layer 7 is located within the second openings 712. The organic light-emitting layer 8 includes the first segment 81 located above the pixel definition layer 7, the first electrode layer 6, and the insulating layer 5, and The second segment 82 is arranged on the auxiliary electrode 41 and located in the opening 611, and the second electrode layer 9 is arranged on the first segment 81, and is arranged on the second segment 82 and the conductive unit 61 through the second opening 712 and the first opening 501. The second electrode layer 9 is electrically connected to the uncovered portion of the first side A, thereby realizing the electrical connection between the second electrode layer 9 and the auxiliary electrode 41; in the embodiment of the present application, the second opening 712 can be formed by the same process as the pixel opening 711, without the need for additional production steps, thereby saving costs.

[0046] It should be noted that the organic light-emitting layer 8 includes an electron injection layer, an electron transport layer, a light-emitting layer, a hole transport layer and a hole injection layer, wherein the electron injection layer and the electron transport layer are only produced by vacuum evaporation process, and the light-emitting layer, the hole transport layer and the hole injection layer can be produced by vacuum evaporation process or by inkjet printing process. In other words, when the organic light-emitting layer is produced by vacuum evaporation, any position of the organic light-emitting layer 8 includes the electron injection layer, the electron transport layer, the light-emitting layer, the hole transport layer and the hole injection layer. When the light-emitting layer, the hole transport layer and the hole injection layer are prepared by inkjet printing, and the electron injection layer and the electron transport layer are produced by vacuum evaporation process, the organic light-emitting layer 8 within the pixel opening 711 includes the electron injection layer, the electron transport layer, the light-emitting layer, the hole transport layer and the hole injection layer, while the organic light-emitting layer 8 located at other positions only includes the electron injection layer and the electron transport layer. For example, the second section 82 only includes the electron injection layer and the electron transport layer.

[0047] In some embodiments, continue to refer to Figure 2 and Figure 12 The area of the second opening 712 is larger than that of the first opening 501. The conductive unit 61 includes a first conductive portion 612 arranged on the insulating layer 5 and located in the second opening 712, and a second conductive portion 613 extending from the first conductive portion 612 to the bottom of the first opening 501. The opening 611 is opened on the second conductive portion 613; the first conductive portion 612 is spaced apart from the pixel definition layer 7. The first segment 81 includes a first sub-segment 811 arranged on the conductive unit 61, and a second sub-segment 812 arranged on the pixel definition layer 7 and the first electrode 62. The first sub-segment 811 and the second sub-segment 812 are spaced apart. The second electrode layer 9 is arranged on the first sub-segment 811, the second sub-segment 812 and the conductive unit 61, and the second electrode layer 9 is electrically connected to the side of the first conductive portion 612 close to the second sub-segment 812.

[0048] It can be understood that the conductive unit 61 includes the first conductive part 612 arranged on the insulating layer 5 and located in the second opening 712, and the second conductive part 613 extending from the first conductive part 612 to the bottom of the first opening 501, the opening 611 is opened on the second conductive part 613, the organic light-emitting layer 8 includes the second segment 82 arranged on the auxiliary electrode 41 and located in the opening 611, the side of the second conductive part 613 close to the second segment 82 is the first side A, the thickness of the second segment 82 is less than the thickness of the second conductive part 613, the second segment 82 is located in the opening 611 and cannot completely cover the first side A, and part of the first side A is exposed, the second electrode layer 9 is arranged on the first segment 81, the second segment 82 and the conductive unit 61, that is, the second electrode layer 9 overlaps with the uncovered part of the first side A in the second conductive part 613, thereby being electrically connected to the auxiliary electrode 41.

[0049] In the embodiment of the present application, the area of the second opening 712 is larger than the area of the first opening 501, and the second opening 712 is correspondingly connected to the first opening 501, that is, the first opening 501 is located in the area where the second opening 712 is located, and the projection of the first conductive portion 612 on the pixel definition layer 7 is located within the second opening 712. In addition, the first conductive portion 612 is spaced apart from the pixel definition layer 7, that is, there is a gap between the first conductive portion 612 and the sidewall of the second opening 712. The organic light-emitting layer 8 includes the first segment 81 located on the pixel definition layer 7, the first electrode layer 6 and the insulating layer 5. The first segment 81 includes the first sub-segment 811 provided on the conductive unit 61, and the first sub-segment 811 provided on the conductive unit 61. The second sub-segment 812 on the pixel definition layer 7, the first electrode 62, and the insulating layer 5, the first sub-segment 811 and the second sub-segment 812 are arranged at intervals, the side of the first conductive part 612 close to the second sub-segment 812 is set as the second side B, the thickness of the second sub-segment 812 is less than the thickness of the first conductive part 612, the second sub-segment 812 cannot completely cover the second side B of the first conductive part 612, and part of the second side B must be exposed. The second electrode layer 9 is arranged on the first sub-segment 811, the second sub-segment 812 and the conductive unit 61, that is, the second electrode layer 9 overlaps with the part of the second side B not covered by the second sub-segment 812, thereby being electrically connected to the auxiliary electrode 41.

[0050] It should be noted that the first conductive part 612 is located on the insulating layer 5, the second conductive part 613 is located in the first opening 501, a part of the second conductive part 613 is located on the side wall of the insulating layer 5 close to the first opening 501, and the other part of the second conductive part 613 is located on the auxiliary electrode 41, the first conductive part 612 and the second conductive part 613 are interconnected and not disconnected, that is, the first conductive part 612 and the second conductive part 613 are both electrically connected to the auxiliary electrode 41, and the second electrode layer 9 is electrically connected to the second conductive part 613 through the first side A, thereby connecting to the auxiliary electrode 41, and at the same time, the second electrode layer 9 is also connected to the first conductive part 612 through the second side B, thereby connecting to the auxiliary electrode 41, further ensuring the electrical connection between the second electrode layer 9 and the auxiliary electrode 41, thereby achieving the effect of reducing the current voltage drop.

[0051] In some embodiments, see Figure 3-Figure 4 The conductive unit 61 includes a first conductive sublayer 6101, a metal sublayer 6102 arranged on the first conductive sublayer 6101, and a second conductive sublayer 6103 arranged on the metal sublayer 6102; the metal sublayer 6102 includes a main body segment 6112 located between the first conductive sublayer 6101 and the second conductive sublayer 6103, and an extension segment 6122 protruding from the side of the conductive unit 61, and the second electrode layer 9 is electrically connected to the extension segment 6122.

[0052] It can be understood that the conductive unit 61 includes the first conductive sublayer 6101, the metal sublayer 6102 provided on the first conductive sublayer 6101, and the second conductive sublayer 6103 provided on the metal sublayer 6102. The metal sublayer 6102 includes the main body segment 6112 located between the first conductive sublayer 6101 and the second conductive sublayer 6103, and the extension segment 6122 protruding from the side of the conductive unit 61. Specifically, the conductive unit 61 is a three-layer metal laminate structure. The first conductive sublayer 6101 includes indium tin oxide (ITO) or indium zinc oxide (IZO). Oxide, IZO), the metal sublayer 6102 includes silver and silver compounds, the second conductive sublayer 6103 includes ITO or ITO, the metal sublayer 6102 includes the main segment 6112 and the extension segment 6122, the main segment 6112 includes silver, the extension segment 6122 includes a silver compound, such as silver oxide or silver sulfide, the extension segment 6122 is protruded from the first side A, the extension segment 6122 is not conducive to the formation of the organic light-emitting layer 8 on the first side A, and facilitates the disconnection of the first segment 81 and the second segment 82, thereby providing more space for the arrangement of the second electrode layer 9, which is more conducive to the connection of the second electrode layer 9 with the conductive unit 61, and thus connected to the auxiliary electrode 41.

[0053] It should be noted that the first electrode 62 and the conductive unit 61 are made of the same material, and the extension segment 6122 is formed by the reaction between the main segment 6112 and the external environment, such as an oxidation reaction; the organic light-emitting layer 8 can be produced by a vacuum evaporation process, and the second electrode layer 9 is produced by a magnetron sputtering process. The film-forming property of the magnetron sputtering process is better than that of the vacuum evaporation process.

[0054] In some embodiments, see Figure 5-Figure 6 The thickness of the second segment 82 is less than the thickness of the first conductive sub-layer 6101, and the second segment 82 is spaced apart from the conductive unit 61.

[0055] It can be understood that the thickness of the first conductive sub-layer 6101 is L1, the thickness of the second segment 82 is L2, the thickness of the second segment 82 is less than the thickness of the first conductive sub-layer 6101, and the second segment 82 is spaced apart from the conductive unit 61. In other words, L2 is less than L1, and the second segment 82 is provided on the auxiliary electrode 41 and is located in the opening 611. At the same time, the second segment 82 is not connected to the first side A of the conductive unit 61, that is, the first side A is not covered, which increases the contact area of the second electrode layer 9 and the first side A, which is more conducive to the circuit conduction between the second electrode layer 9 and the auxiliary electrode 41; preferably, the first After the thickness of the conductive sub-layer 6101 is greater than the thickness of the second section 82 and the second electrode layer 9, the auxiliary electrode 41 includes a covering portion, and the projection of the extension section 6122 on the substrate 1 completely coincides with the projection of the covering portion on the substrate 1. A cavity 601 is formed between the extension section 6122 and the covering portion. A gap 602 communicating with the cavity 601 is formed in the opening 611 between the second section 82 and the extension section 6122. The second electrode layer 9 is electrically connected to the covering portion in the auxiliary electrode 41 through the gap 602. Without the need for additional masking process, direct connection between the second electrode layer 9 and the auxiliary electrode 41 can be achieved, thereby improving the current voltage drop phenomenon.

[0056] In some embodiments, see Figure 2 、 Figure 9-10 The thin film transistor layer 10 includes a plurality of thin film transistors, and the first metal layer 4 includes the source 43 and the drain 42 of the thin film transistors.

[0057] It can be understood that the thin film transistor layer 10 includes multiple thin film transistors, and the thin film transistor layer 10 also includes the first metal layer 4 and a second metal layer located between the first metal layer 4 and the substrate 1, the second metal layer includes the gate 510 of the thin film transistor, the first metal layer 4 includes the source 43 and the drain 42 of the thin film transistor, and the auxiliary electrode 41 and the source 43 and the drain 42 are produced in the same process, without the need for additional processes, thus saving costs; specifically, the auxiliary electrode 41 includes a three-layer metal structure of MoTi / Cu / MoTi, and MoTi can protect the auxiliary electrode 41 from being etched by the etching solution used to prepare the first electrode 62 and the conductive unit 61. For example, the etching solution used to prepare the first electrode 62 and the conductive unit 61 is a mixed acid of phosphoric acid, nitric acid, and acetic acid, and MoTi can protect the auxiliary electrode 41 from being etched by the mixed acid.

[0058] In some embodiments, see Figure 2and Figure 10 In a direction perpendicular to the substrate 1 , the depth of the first opening 501 is 3 μm to 6 μm.

[0059] It can be understood that, in the direction perpendicular to the substrate 1, the depth of the first opening 501 is L3, and the range of L3 is 3μm to 6μm, which can meet the requirement of spacing between the second segment 82 and the first segment 81 without significantly affecting the thickness of the display panel; specifically, the first opening 501 is located in the insulating layer 5 and is arranged corresponding to the auxiliary electrode 41, the conductive unit 61 is at least arranged in the first opening 501 and includes the opening 611 located in the first opening 501, the second segment 82 is arranged on the auxiliary electrode 41 and is located in the opening 611, when the L3 is less than 3μm, since the organic light-emitting layer 8 is made by a vacuum evaporation process, the deeper the depth of the first opening 501, the more conducive it is to the spacing between the first segment 81 and the second segment 82 If the depth of the first opening 501 is less than 3 μm, the first segment 81 may be connected to the second segment 82, resulting in the first side A being completely covered by the organic light-emitting layer 8, so that the second electrode layer 9 cannot be connected to the first side A, and the technical effect of the second electrode layer 9 being electrically connected to the auxiliary electrode 41 to improve the current voltage drop cannot be achieved; when the L3 is greater than 6 μm, that is, the thickness of the insulating layer 5 is higher than 6 μm, it is not conducive to the thinning design of the display panel; therefore, when the range of the L3 is 3 μm to 6 μm, it can meet the requirement of the spacing between the second segment 82 and the first segment 81, and achieve the technical effect of the second electrode layer 9 being electrically connected to the auxiliary electrode 41 to improve the current voltage drop, without having a significant impact on the thickness of the display panel.

[0060] In some embodiments, continue to refer to Figure 2 and Figure 10 , an included angle a between the side wall of the first opening 501 and the bottom surface of the first opening 501 is 90° to 100°.

[0061] Specifically, the closer the angle a is to 90°, the steeper the side wall of the first opening 501, that is, the larger the taper angle, which is more conducive to the discontinuity between the first segment 81 and the second segment 82, and reduces the contact area between the second segment 82 and the first side A. That is, when the organic light-emitting layer 8 is formed, the area covered by the second segment 82 on the first side A is reduced, and more of the first side A is exposed, which facilitates the electrical connection between the second electrode layer 9 and the uncovered part of the first side A, thereby connecting to the auxiliary electrode 41.

[0062] It should be noted that the angle a refers to the angle between the side wall of the first opening 501 and the bottom surface of the first opening 501, 90° means that the side wall of the first opening 501 is perpendicular to the bottom surface of the first opening 501, and the first opening 501 is formed by patterning the insulating layer 5. The angle between the side wall and the bottom surface of the first opening 501 is greater than 100°, and the side wall of the first opening 501 is relatively flat relative to the bottom surface. Further, the angle a of the first opening 501 can be adjusted by dry etching in an oxygen atmosphere, so that the steeper the side wall of the first opening 501, the more conducive it is to the discontinuity between the first segment 81 and the second segment 82, reducing the contact area between the second segment 82 and the first side A, and facilitating the electrical connection of the second electrode layer 9 to the uncovered part of the first side A, thereby connecting to the auxiliary electrode 41.

[0063] This application provides a method for manufacturing a display panel. Figure 2 、 Figure 7-13 , including the following steps:

[0064] S10: providing a substrate 1, and forming a thin film transistor layer 10 on the substrate 1, wherein the thin film transistor layer 10 includes a first metal layer 4 and an insulating layer 5 formed on the first metal layer 4, the first metal layer 4 includes an auxiliary electrode 41, and the insulating layer 5 includes a first opening 501 corresponding to the auxiliary electrode 41, and a via 502 spaced apart from the first opening 501;

[0065] For details, see Figures 8-10 A thin film transistor layer 10 is formed on a substrate. The thin film transistor layer 10 includes a light shielding layer, a buffer layer 2, a semiconductor active layer, a gate insulating layer 410, a second metal layer, an interlayer insulating layer 3, a first metal layer 4, and an insulating layer 5, which are sequentially formed on the substrate 1. The light shielding layer includes a light shielding portion 21 and a first electrode plate 22 arranged on the same layer. The buffer layer covers the substrate 1 and the light shielding layer. The semiconductor active layer includes a semiconductor 31 and a second electrode plate 32 arranged on the same layer. The gate insulating layer 410 is located on the semiconductor 31. The second metal layer includes a gate 510. The projection of the insulating layer 5 on the substrate 1 completely overlaps with the projection of the gate 510 on the substrate 1. The interlayer insulating layer 3 covers the semiconductor active layer and the second metal layer. The first metal layer 4 includes a source 43, a drain 42, an auxiliary electrode 41, and a test electrode 44 arranged on the same layer. The insulating layer 5 includes a passivation layer 51 and a planarization layer 52. The first electrode plate 22 and the second electrode plate 32 form a capacitor structure.

[0066] In an embodiment of the present application, the thin film transistor layer 10 also includes a buffer layer contact hole arranged corresponding to the shading portion 21, the buffer layer contact hole passes through the interlayer insulating layer 3 and the buffer layer 2, the source 43 is connected to the shading portion 21 through the buffer layer contact hole, the interlayer insulating layer 3 includes a semiconductor contact hole, and the source 43 is connected to the semiconductor 31 through the semiconductor contact hole.

[0067] In the embodiment of the present application, the material of the light shielding portion 21 and the first electrode plate 22 includes one or more of Mo, Ti, Cu, and Mn, the material of the buffer layer 2 includes SiOx or SiNx, and the buffer layer 2 can be a single-layer structure or a multi-layer structure. The material of the semiconductor 31 and the second electrode plate 32 includes one of IGZO, IZTO, and IGZTO. The material of the gate insulating layer 410 includes SiOx or SiNx, and the gate insulating layer 410 can be a single-layer structure or a multi-layer structure. The material of the gate 510 includes one or more of Mo, Ti, Cu, and Mn. The material of the interlayer insulating layer 3 includes Si Ox or SiNx, the interlayer insulating layer 3 can be a single-layer structure or a multi-layer structure, the materials of the auxiliary electrode 41, the source 43, the drain 42, and the test electrode 44 all include a MoTi / Cu / MoTi three-layer metal structure, the material of the passivation layer 51 includes SiOx or SiNx, the passivation layer 51 can be a single-layer structure or a multi-layer structure, the material of the planar layer 52 includes an organic material, such as an organic photoresist, and the planar layer 52 can be a single-layer structure or a multi-layer structure, wherein the auxiliary electrode 41 and the source 43 are made of the same material and can share the same manufacturing process, and no additional manufacturing process is required to manufacture the auxiliary electrode.

[0068] It should be noted that the gate 510 is manufactured through a yellow light process, and then the gate insulating layer 410 is manufactured using the pattern of the gate 510 as a reference. The projection of the gate insulating layer 410 on the substrate 1 completely overlaps with the projection of the gate 510 on the substrate. Then, the semiconductor 31 is plasma treated. Since the gate insulating layer 410 covers part of the semiconductor 31, the uncovered part of the semiconductor 31 forms an N+ conductor layer, and the covered part of the semiconductor 31 still maintains semiconductor properties and serves as a thin film transistor channel.

[0069] S20: forming a first electrode layer 6 on the insulating layer 5, wherein the first electrode layer 6 includes a plurality of first electrodes 62 and a conductive unit 61 spaced apart from the first electrodes 62, wherein the first electrodes 62 pass through the via holes 502 and are electrically connected to the first metal layer 4, wherein the conductive unit 61 is formed at least at the bottom of the first opening 501 and is electrically connected to the auxiliary electrode 41, and wherein the conductive unit 61 includes an opening 611 formed in the first opening 501;

[0070] For details, please refer to Figure 10-12 , the first electrode layer 6 is formed on the insulating layer 5, the first electrode layer 6 includes the first electrodes 62 and the conductive unit 61 arranged at intervals, the first electrode 62 can be an anode, the material of the first electrode layer 6 includes ITO / Ag / ITO or IZO / Ag / IZO, that is, the conductive unit 61 and the first electrode 62 are made of the same material and can be manufactured in a common manufacturing process, without the need for an additional manufacturing process to manufacture the conductive unit, the insulating layer 5 is provided with the first openings 501 and the vias 502 arranged at intervals, the first electrode 62 is connected to the source 43 through the vias 502, at least part of the conductive unit 61 is located in the first opening 501 and is electrically connected to the auxiliary electrode 41, and the conductive unit 61 includes the opening 611 formed in the first opening 501.

[0071] S30: forming an organic light-emitting layer 8 on a side of the first electrode layer 6 away from the substrate 1, the organic light-emitting layer 8 including a first segment 81 formed on the side of the first electrode layer 6 away from the substrate 1, and a second segment 82 formed on the auxiliary electrode 41 and located within the opening 611, the second segment 82 having a thickness less than that of the conductive unit 61, and the first segment 81 and the second segment 82 being spaced apart;

[0072] For details, see Figure 11-13The organic light-emitting layer 8 is formed on the side of the first electrode layer 6 away from the substrate 1. The organic light-emitting layer 8 includes a first segment 81 formed on the side of the first electrode layer 6 away from the substrate 1, and a second segment formed on the auxiliary electrode 41 and located in the opening 611, that is, the first segment 81 is located on the first electrode 62, the conductive unit 61, and the insulating layer 5, the second segment 82 is located on the auxiliary electrode 41, and the side of the conductive unit 61 located in the first opening 501 facing the second segment 82 is set as the first side A. The thickness of the second segment 82 is less than the thickness of the conductive unit 61. The first segment 81 and the second segment 82 are spaced apart, that is, the first segment 81 is not connected to the first side A, the second segment 82 can cover part of the first side A, and part of the first side A is exposed.

[0073] In the embodiment of the present application, a pixel definition layer 7 is formed on a side of the first electrode layer 6 away from the substrate 1, and the pixel definition layer 7 is located between the first electrode layer 6 and the organic light-emitting layer 8. The pixel definition layer 7 includes a second opening 712 connected to the first opening 501, and a pixel opening 711 spaced apart from the second opening 712. The projection of the conductive unit 61 on the pixel definition layer 7 is located within the second opening 712, that is, the pixel definition layer 7 covers the first electrode 62 and part of the insulating layer 5. The second opening 712 can share the same manufacturing process as the pixel opening 711, and there is no need to add an additional manufacturing process to manufacture the second opening 712.

[0074] S40: forming a second electrode layer 9 on a side of the organic light-emitting layer 8 away from the substrate 1, wherein the second electrode layer 9 is formed on the first segment 81, the second segment 82 and the conductive unit 61, and the second electrode layer 9 is electrically connected to the side of the conductive unit 61 close to the second segment 82.

[0075] For details, see Figure 2 A second electrode layer 9 is formed on the side of the organic light-emitting layer 8 away from the substrate 1. The second electrode layer 9 is formed on the first segment 81, the second segment 82 and the conductive unit 61. The first segment 81 is not connected to the first side A, and the second segment 82 covers a portion of the first side A. Therefore, the second electrode layer 9 is electrically connected to the uncovered portion of the first side A, thereby realizing electrical connection between the second electrode layer 9 and the auxiliary electrode 41.

[0076] It should be noted that the organic light-emitting layer 8 is produced by a vacuum evaporation process, and the second electrode layer 9 is produced by a magnetron sputtering process. The film layer produced by the magnetron sputtering process has better film-forming properties than the film layer produced by the vacuum evaporation process, that is, the second electrode layer 9 has better film continuity than the organic light-emitting layer 8.

[0077] The present application provides a display device, comprising the display panel in any one of the above embodiments.

[0078] Specifically, the display device includes but is not limited to a television, an industrial control display, a commercial display panel or other wearable display or touch electronic device.

[0079] In the embodiment of the present application, the auxiliary electrode 41 is arranged on the first metal layer 4, the conductive unit 61 is arranged on the first electrode layer 6, and the first opening 501 is opened on the insulating layer 5. In combination, the organic light-emitting layer 8 is divided into the first segment 81 located on the side of the first electrode layer 6 away from the substrate 1, and the second segment 82 is arranged on the auxiliary electrode 41, and the thickness of the second segment 82 is less than the thickness of the conductive unit 61, so that the second electrode layer 9 can be electrically connected to the auxiliary electrode 41 through the conductive unit 61, and the structures for reducing the current voltage drop such as the auxiliary electrode 41, the conductive unit 61, the first opening 501 and the second segment 82 are arranged on the same layer as the functional film layers of the display panel. On the basis of reducing the current voltage drop of the second electrode layer 9 and ensuring uniform display brightness of the display panel, no additional manufacturing process is required, thereby saving production costs.

[0080] The above is a detailed introduction to the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method and core idea of the present application. At the same time, for those skilled in the art, based on the ideas of the present application, there may be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A display panel, characterized in that: include: substrate; a thin film transistor layer disposed on the substrate, the thin film transistor layer comprising a first metal layer and an insulating layer disposed on the first metal layer, the first metal layer comprising an auxiliary electrode, and the insulating layer comprising a first opening corresponding to the auxiliary electrode; a first electrode layer disposed on the insulating layer, the first electrode layer comprising a plurality of first electrodes and conductive units spaced apart from the first electrodes, the insulating layer comprising vias spaced apart from the first openings, the first electrodes passing through the vias to be electrically connected to the first metal layer; a pixel definition layer disposed on the first electrode layer and the insulating layer, the pixel definition layer comprising a plurality of pixel openings and second openings spaced apart from the pixel openings, the second openings being in communication with the first openings; an organic light-emitting layer, disposed on a side of the first electrode layer away from the substrate; a second electrode layer, disposed on a side of the organic light-emitting layer away from the substrate; The conductive unit is at least disposed at the bottom of the first opening and electrically connected to the auxiliary electrode. The conductive unit includes an opening located within the first opening. The organic light-emitting layer includes a first segment located on a side of the first electrode layer away from the substrate, and a second segment disposed on the auxiliary electrode and within the opening. The thickness of the second segment is less than that of the conductive unit. The first segment and the second segment are spaced apart. The second electrode layer is disposed on the first segment, the second segment, and the conductive unit. The conductive unit includes a first conductive sublayer, a metal sublayer disposed on the first conductive sublayer, and a second conductive sublayer disposed on the metal sublayer; The metal sublayer includes a main body segment located between the first conductive sublayer and the second conductive sublayer, and an extension segment protruding from a side of the conductive unit. The second electrode layer is electrically connected to the extension segment through the first opening and the second opening.

2. The display panel according to claim 1, wherein: The area of the second opening is larger than that of the first opening. The conductive unit includes a first conductive portion disposed on the insulating layer and located in the second opening, and a second conductive portion extending from the first conductive portion to the bottom of the first opening. The opening is formed on the second conductive portion. The first conductive portion is spaced apart from the pixel definition layer, the first segment includes a first sub-segment arranged on the conductive unit, and a second sub-segment arranged on the pixel definition layer and the first electrode, the first sub-segment and the second sub-segment are spaced apart, the second electrode layer is arranged on the first sub-segment, the second sub-segment and the conductive unit, and the second electrode layer is electrically connected to the side of the first conductive portion close to the second sub-segment.

3. The display panel according to claim 1, wherein: The thickness of the second segment is smaller than the thickness of the first conductive sub-layer, and the second segment is spaced apart from the conductive unit.

4. The display panel according to claim 1, wherein: The thin film transistor layer includes a plurality of thin film transistors, and the first metal layer includes source electrodes and drain electrodes of the thin film transistors.

5. The display panel according to claim 1, wherein: In a direction perpendicular to the substrate, a depth of the first opening is 3 μm to 6 μm.

6. The display panel according to claim 1, wherein: An included angle between the side wall of the first opening and the bottom surface of the first opening is 90° to 100°.

7. A method for manufacturing a display panel, characterized in that: The following steps are involved: Providing a substrate, forming a thin film transistor layer on the substrate, the thin film transistor layer including a first metal layer and an insulating layer formed on the first metal layer, the first metal layer including an auxiliary electrode, the insulating layer including a first opening corresponding to the auxiliary electrode, and a via hole spaced apart from the first opening; A first electrode layer is formed on the insulating layer, the first electrode layer including a plurality of first electrodes and a conductive unit spaced apart from the first electrodes, the first electrodes being electrically connected to the first metal layer through the via holes, the conductive unit being formed at least at the bottom of the first opening and being electrically connected to the auxiliary electrode, the conductive unit including an opening formed in the first opening, the conductive unit including a first conductive sublayer, a metal sublayer disposed on the first conductive sublayer, and a second conductive sublayer disposed on the metal sublayer, the metal sublayer including a body segment located between the first conductive sublayer and the second conductive sublayer, and an extension segment protruding from a side of the conductive unit; A pixel definition layer and an organic light-emitting layer are formed on a side of the first electrode layer away from the substrate, the pixel definition layer is located between the first electrode layer and the organic light-emitting layer, the pixel definition layer includes a second opening connected to the first opening, and a pixel opening spaced apart from the second opening, the organic light-emitting layer includes a first segment formed on a side of the first electrode layer away from the substrate, and a second segment formed on the auxiliary electrode and located within the opening, the thickness of the second segment is less than the thickness of the conductive unit, and the first segment and the second segment are spaced apart; A second electrode layer is formed on a side of the organic light-emitting layer away from the substrate. The second electrode layer is formed on the first segment, the second segment and the conductive unit, and the second electrode layer is electrically connected to the extension segment through the first opening and the second opening.

8. A display device, characterized in that: The display panel comprises the display panel according to any one of claims 1 to 6.

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