Antenna and wireless device

Abstract

The present application discloses an antenna and a wireless device for improving the radiation efficiency of the antenna. The antenna provided in the present application includes a reflector and a main oscillator, the reflector includes a multi-segment metal structure, the multi-segment metal structure includes a first metal structure and a second metal structure, a PIN-type diode is arranged on the first metal structure, the first metal structure and the second metal structure are connected, the length of the multi-segment metal structure is within a first value range, the polarization directions of the first metal structure and the main oscillator are parallel, and the second metal structure is perpendicular to the first metal structure.

Description

Technical Field

[0001] The present application relates to the field of wireless communications, and in particular to an antenna and a wireless device. Background Art

[0002] With the rapid development of modern communication systems, reconfigurable antennas as a new type of antenna have become a research hotspot in communication systems. Reconfigurable antennas mainly achieve the reconfiguration of antenna performance by adjusting the physical structure or size of the antenna.

[0003] The physical structure or size design of the reflector of the reconfigurable antenna can affect the radiation efficiency of the reconfigurable antenna. The reflector of the reconfigurable antenna adopts a rectangular structure design. The operating frequency width of the reflector with a rectangular structure design is relatively narrow, resulting in a decrease in the radiation efficiency of the antenna in the high frequency band. Summary of the invention

[0004] The present application provides an antenna and a wireless device for improving the radiation efficiency of the antenna.

[0005] In a first aspect, the present application provides an antenna, which includes a reflector and a main oscillator, the reflector includes a multi-segment metal structure, the multi-segment metal structure includes a first metal structure and a second metal structure, a PIN-type diode is provided on the first metal structure, and the first metal structure and the second metal structure are connected. The polarization directions of the first metal structure and the main oscillator are parallel, and the second metal structure is perpendicular to the first metal structure. The length of the multi-segment metal structure of the reflector is within a first value range, and the first value range depends on the wavelength corresponding to the working frequency band of the reflector. For example, the first value range is 0.225 to 0.275 times the wavelength corresponding to the working frequency band of the reflector.

[0006] The antenna reflector provided in the present application has a multi-section metal structure, in which the first metal and the second metal structure are bent. The mutual impedance between the reflector and the main oscillator under this structure changes, thereby increasing the operating frequency width of the reflector and thereby improving the antenna radiation efficiency.

[0007] In a possible implementation manner, the PIN diode on the first metal structure may be connected in a variety of ways, such as welding or riveting, which is not specifically limited.

[0008] In the present application, various connection methods of the PIN diode on the first metal structure improve the feasibility of the solution.

[0009] In a possible implementation manner, the multi-segment metal structure further includes a third metal structure, the third metal structure is connected to the second metal structure, and the third metal structure is parallel to the first metal structure.

[0010] The multi-segment metal structure provided in the present application also includes a third metal structure. The first metal, the second metal structure and the third metal structure in the multi-segment metal structure are bent structures. The impedance curve of the antenna under the reflector structure in the Smith chart becomes smaller, which increases the operating frequency width of the reflector and thereby improves the antenna radiation efficiency.

[0011] In one possible implementation, a plurality of reflectors are evenly arranged on a circle with the main oscillator as the center, the reflectors and the main oscillator are placed on the same horizontal plane, and the distance between the reflectors and the main oscillator is within a second value range, and the second value range depends on the wavelength corresponding to the working frequency band of the reflector. For example, the second value range is 0.17 to 0.25 times the working wavelength, and the working wavelength is the wavelength corresponding to the working frequency band of the reflector.

[0012] In a possible implementation, a PIN diode is used to control the state of the reflector to be in an operating state or an off state.

[0013] In a possible implementation, an inductor is connected in parallel at both ends of the PIN diode, the inductor includes a distributed inductor and a DC blocking capacitor, and the DC blocking capacitor includes a distributed capacitor or a lumped capacitor. The inductance value of the distributed inductor is related to the length of the distributed inductor.

[0014] The length of the distributed inductance value is within a third value range, and the third value range depends on the wavelength corresponding to the working frequency band of the reflector. For example, the third value range is 0.05 to 0.5 times the working wavelength, and the working wavelength is the wavelength corresponding to the working frequency band of the reflector. The distributed inductance can have a variety of shapes, such as a rectangle, a trapezoid, or an arc.

[0015] In a possible implementation manner, the resonant frequency of the resonant circuit of the PIN diode and the distributed inductor is within the operating frequency band of the main oscillator.

[0016] The second aspect of the present application provides an antenna, which includes a reflector and a main oscillator. A PIN-type diode is arranged on the reflector. An inductor is connected in parallel at both ends of the PIN-type diode. The inductor includes a distributed inductor and a DC-blocking capacitor. The DC-blocking capacitor includes a distributed capacitor or a lumped capacitor.

[0017] The reflector of the antenna provided in the second aspect of the present application has a parallel inductor. After the inductor is connected in parallel to the PIN tube of the reflector, the parallel inductor can change the resonant frequency of the reflection, thereby increasing the operating frequency width of the reflector and improving the radiation efficiency of the antenna.

[0018] In a possible implementation manner, the resonant frequency of the resonant circuit including the PIN diode and the distributed inductor is within the operating frequency band of the main oscillator.

[0019] The resonant frequency of the resonant circuit of the reflector in the present application is within the operating frequency band of the main oscillator, thereby improving the radiation efficiency of the antenna.

[0020] In one possible implementation, the value of the distributed inductor is related to the length of the distributed inductor, and the length of the distributed inductor is within a first value range, for example, a third value range is 0.05 to 0.5 times the working wavelength, and the working wavelength is the wavelength corresponding to the working frequency band of the reflector.

[0021] In a possible implementation manner, the distributed inductor may have a variety of shapes, such as a rectangular, trapezoidal, or arc shape.

[0022] In one possible embodiment, the reflector includes a multi-section metal structure, the multi-section metal structure includes a first metal structure and a second metal structure, a PIN diode is arranged on the first metal structure, the first metal structure and the second metal structure are connected, the length of the multi-section metal structure is within a second value range, the polarization directions of the first metal structure and the main oscillator are parallel, and the second metal structure is perpendicular to the first metal structure.

[0023] The length of the multi-segment metal structure of the reflector is within a second value range, which depends on the wavelength corresponding to the working frequency band of the reflector. For example, the second value range is 0.225 to 0.275 times the working wavelength, which is the wavelength corresponding to the working frequency band of the reflector.

[0024] In a possible implementation manner, the multi-segment metal structure further includes a third metal structure, the third metal structure is connected to the second metal structure, and the third metal structure is parallel to the first metal structure.

[0025] In a possible implementation manner, a plurality of reflectors are evenly placed on a circumference with the main oscillator as the center, and the reflectors and the main oscillator are placed on the same horizontal plane.

[0026] In one embodiment, the distance between the reflector and the main oscillator is within a third value range, and the third value range depends on the wavelength corresponding to the working frequency band of the reflector. For example, the third value range is 0.17 to 0.25 times the working wavelength, and the working wavelength is the wavelength corresponding to the working frequency band of the reflector.

[0027] In a possible implementation, a PIN diode is used to control the state of the reflector to be in an operating state or an off state.

[0028] The third aspect of the present application provides a wireless device, which includes a radio frequency circuit, a switching circuit and an antenna. The antenna is the antenna described in the first aspect and any possible implementation of the first aspect, or the antenna described in the second aspect and any possible implementation of the second aspect, wherein the radio frequency circuit is connected to the main oscillator in the antenna, and the switching circuit is connected to the reflector in the antenna. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 A schematic diagram of the system architecture of an application scenario of the antenna provided in this application;

[0030] Figure 2 A schematic diagram of the structure of the antenna provided in this application;

[0031] Figure 3a A schematic diagram of the structure of the antenna reflector provided in this application;

[0032] Figure 3b A schematic diagram of the structure of an inductor in a reflector provided in the present application;

[0033] Figure 4a An equivalent circuit diagram of the reflector provided in this application;

[0034] Figure 4b An equivalent circuit diagram of the reflector provided in this application;

[0035] Figure 5 Schematic diagram of impedance curves under different reflector structures provided in this application;

[0036] Figure 6 A schematic diagram of the beam direction of the antenna provided for this application;

[0037] Figure 7 A schematic diagram of the structure of a wireless device provided by this application;

[0038] Figure 8 Another structural schematic diagram of the wireless device provided in this application. DETAILED DESCRIPTION

[0039] The terms "first", "second", "third", "fourth", etc. (if any) in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments described herein can be implemented in an order other than that illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0040] Below, some terms in this application are explained to facilitate understanding by those skilled in the art.

[0041] A terminal is a device that provides voice and / or data connectivity to users, such as handheld devices and vehicle-mounted devices with wireless connection capabilities. Some examples of terminals are: mobile phones, tablet computers, laptops, PDAs, mobile Internet devices (MIDs), and wearable devices. Wearable devices include virtual reality VR glasses, smart watches, smart bracelets, pedometers, etc.

[0042] A reconfigurable antenna means that the relationship between the array elements in a multi-antenna array is not fixed and can be adjusted according to actual conditions. It mainly achieves the reconfiguration of antenna performance by adjusting state-variable devices. Reconfigurable antennas can be divided into frequency reconfigurable antennas, pattern reconfigurable antennas, polarization reconfigurable antennas and multi-electromagnetic parameter reconfigurable antennas according to their functions. A positive intrinsic negative (PIN) diode is connected in series on the reflector of the reconfigurable antenna. The reflector of the reconfigurable antenna changes the distribution of the induced current on the reflector by switching the switch state of the PIN diode, thereby reconstructing the antenna beam.

[0043] Positive intrinsic negative (PIN) diode, also known as phase-shifting switch diode. Compared with the ordinary two-layer PN junction diode, the PIN diode introduces an I layer, that is, between the P layer composed of P-type semiconductor material and the N layer composed of N-type semiconductor material of the ordinary PN junction diode, a low-doped I layer with purity close to that of intrinsic semiconductor material is inserted. If the I layer material is a low-doped P-type semiconductor, the diode can be called a π-type PIN diode; if the I layer material is a low-doped N-type semiconductor, the diode can be called a ν-type PIN diode. In a PIN diode, the P layer and the N layer are usually composed of highly doped semiconductor materials. Due to the existence of the I layer, the PIN diode usually has a wider depletion layer, a larger junction resistance and a smaller junction capacitance than ordinary diodes. In RF and microwave level circuits, PIN diodes are often used as microwave switches, phase shifters or attenuators.

[0044] The full name of the standing wave ratio is voltage standing wave ratio (VSWR), which refers to the ratio of the standing wave antinode voltage to the trough voltage. When the standing wave ratio is equal to 1, it means that the impedance of the feeder antenna is completely matched. At this time, all high-frequency energy is radiated by the antenna, and there is no energy reflection loss. When the standing wave ratio is infinite, it means total reflection, and no energy is radiated.

[0045] Some terms in the present application are explained above, and the antenna provided in the present application is introduced below.

[0046] See also Figure 1 , Figure 1 This is a schematic diagram of a system architecture used by the antenna provided in this application. The system architecture mainly includes an access point 101 and a terminal 102.

[0047] The access point 101 may include a wireless switch, a wireless router, a wireless network card or a wireless bridge, etc., which are not specifically limited. The access point 101 is mainly used to exchange data with the terminal 102, and can also be responsible for the network management of the terminal 102. For example, the access point 101 manages the sleep and roaming of the terminal 102. The terminal 102 can access the network through the access point 101, and the terminal includes electronic devices such as mobile phones and computers.

[0048] The antenna provided in the present application can be applied to the above-mentioned system architecture, especially to the local area network scenario with high-density indoor access. Specifically, the antenna provided in the present application can be applied to the above-mentioned access point 101 or terminal 102.

[0049] The above introduces the system architecture and application scenarios of this application. The following is an introduction to the antenna provided by this application:

[0050] See also Figure 2 , Figure 2 The present invention provides an antenna structure schematic diagram, wherein the antenna provided in the present invention includes a main oscillator 202 and a reflector 203. The main oscillator 202 and the reflector 203 are vertically placed on a horizontal plane 201, the reflector 203 is parallel to the polarization direction of the main oscillator 202, and the polarization direction of the main oscillator 202 is vertical polarization.

[0051] The reflector 203 is placed on a circle with the main oscillator 202 as the center. The distance between the reflector 203 and the main oscillator 202 is the radius of the circle. The radius of the circle ranges from 0.17 to 0.25 times the working wavelength of the reflector, which is the wavelength corresponding to the working frequency band of the reflector.

[0052] The number of reflectors in the antenna provided in this application is not limited. Figure 2 This is only an example in which the number of reflectors is 4. The number of reflectors may also be 3, and there is no specific limitation.

[0053] Above Figure 2 As only one example of the antenna provided in this application, in another example, the main oscillator can also be polarized in the horizontal direction. When the main oscillator is polarized in the horizontal direction, the reflector arrangement has been adjusted accordingly, which will not be repeated here.

[0054] An example of a reflector for the above antenna is introduced below:

[0055] See also Figure 3a , Figure 3a This is a schematic diagram of a structure of a reflector of an antenna provided in the present application, and the reflector includes a first metal structure 301, a second metal structure 302, and a third metal structure 303. The first metal structure 301, the second metal structure 302, and the third metal structure 303 are connected in sequence.

[0056] The first metal structure 301 is vertically placed on a horizontal plane, the first metal structure 301 is perpendicular to the second metal structure 302 , the second metal structure 302 is perpendicular to the third metal structure 303 , and the first metal structure 301 is parallel to the polarization direction of the main oscillator.

[0057] The total length of the first metal structure 301 , the second metal structure 302 and the third metal structure 303 is 0.225 to 0.275 times of the working wavelength of the reflector, where the working wavelength is the wavelength corresponding to the working frequency band of the reflector.

[0058] A PIN diode 304 is disposed on the first metal structure 301 . An inductor 305 is connected in parallel at both ends of the PIN diode 304 . The inductor 305 includes a distributed inductor and a DC blocking capacitor.

[0059] The PIN diode 304 is used to control the state of the reflector to be in an operating state or an off state. The connection process between the PIN diode 304 and the first metal structure is not limited, for example, it can be welding or riveting.

[0060] In the present application, the PIN diode 304 may also be replaced by other diodes or switching devices, without specific limitation.

[0061] See also Figure 3b , Figure 3b are schematic diagrams of several structures of the inductor 305. Figure 3b In an example shown, the inductor 305 includes a distributed inductor 3051 and a DC blocking capacitor 3052. The distributed inductor 3051 is a bent metal structure. The inductance value of the distributed inductor 3051 is related to the total length of the bent metal structure. The total length of the bent metal structure is 0.05 to 0.5 times the working wavelength of the reflector.

[0062] In another example, the shape of the distributed inductor 3051 can be a rectangular distributed inductor 3052, a trapezoidal distributed inductor 3055, or an arc-shaped distributed inductor 3056, without specific limitation. The total length of the metal structure of the multiple distributed inductors is 0.05 to 0.5 times the working wavelength of the reflector.

[0063] In another example, the DC blocking capacitor 3052 may be a distributed capacitor 3054 or a lumped capacitor, which is not specifically limited.

[0064] In another example of the antenna reflector provided in the present application, the reflector only includes a first metal structure 301, a second metal structure 302 and a third metal structure 303, wherein there is no parallel inductance at both ends of the PIN diode on the first metal structure 301. In this example, when the PIN diode 304 is in the OFF state, the equivalent circuit of the reflector is an RC parallel circuit. The RC parallel circuit is as follows: Figure 4a As shown, the isolation of the reflector decreases as the frequency increases.

[0065] exist Figure 3a In the example shown, an inductor 305 is connected in parallel to both ends of the PIN diode 304. After the inductor 305 is connected in parallel, the equivalent circuit of the reflector is an RLC parallel circuit. Figure 4b The circuit has a large isolation at the resonant frequency, and the reflector is in a cut-off state, which reduces the mutual impedance between the reflector and the main oscillator and improves the radiation efficiency of the antenna.

[0066] Furthermore, this application Figure 3aThe inductance value of the inductor 305 shown can be adjusted. Specifically, the inductance value is adjusted by changing the size of the distributed inductance of the inductor 305, thereby changing the resonant frequency point of the reflector.

[0067] See also Figure 5 , Figure 5 The Smith charts corresponding to several antenna reflectors provided in the present application are shown. The impedance curve in the Smith chart can reflect the impedance matching effect of the antenna.

[0068] like Figure 5 As shown, in Figure 5 Among the three Smith charts, the curve in the third Smith chart is Figure 3a The impedance curve of the antenna corresponding to the reflector shown. Comparing the impedance curves of the three reflectors, it can be seen that the impedance curve of the reflector shown in 3a is closer to the impedance matching point of the antenna than the impedance curves of the above two figures. The impedance matching point is the center point of the Smith chart.

[0069] In this application Figure 5 Compared with the antenna corresponding to the first impedance curve, the antenna corresponding to the third impedance curve shown has a frequency bandwidth with an omnidirectional standing wave ratio less than 2 increased by 32%, and a frequency bandwidth with a directional standing wave ratio less than 2 increased by 32%.

[0070] Figure 5 The second impedance curve in the Smith chart is an impedance curve corresponding to a reflector having a PIN diode without a parallel inductor in another embodiment of the present application. It can be seen from the impedance curve in the second Smith chart that the impedance curve of the three-segment metal structure reflector is closer to the impedance matching point of the antenna than the one-segment rectangular reflector structure.

[0071] In this application Figure 5 Compared with the antenna corresponding to the first impedance curve, the antenna corresponding to the second impedance curve shown has a frequency bandwidth in which the omnidirectional standing wave ratio is less than 2 unchanged, and a frequency bandwidth in which the directional standing wave ratio is less than 2 increased by 15%.

[0072] See also Figure 6 , Figure 6 The directional pattern of the antenna provided in this application at an elevation angle of 75 degrees, the reflector of the antenna is Figure 3a The working frequency bandwidth of the antenna can reach 5.15GHz to 7.15GHz. Figure 6 It can be seen that within the range of plus or minus 45 degrees of the maximum gain direction of the antenna, the average gain of the antenna is greater than 6dBi (dBi is the unit of power gain, and the reference standard of dBi is omnidirectional antenna) at different operating frequencies.

[0073] The above introduces the antenna provided by the present application, and the following introduces the wireless device provided by the present application.

[0074] See also Figure 7 , Figure 7 The wireless device 700 provided in the present application includes a radio frequency circuit 701, an antenna 702 and a switch circuit 703, wherein the antenna 702 includes a main oscillator 7021 and a reflector 7022. The antenna 702 is the antenna described in the above embodiment, the radio frequency circuit 701 is connected to the main oscillator 7021 in the antenna 702, and the switch circuit 703 is connected to the reflector 7022 in the antenna 702.

[0075] See also Figure 8 , Figure 8 This is another wireless device schematic diagram provided in the present application. The wireless device 800 provided in the present application includes a transceiver unit 801, which is used to receive or send data with other network devices, and a processing unit 802 is used to control the data interaction between the transceiver unit 801 and other network devices.

[0076] The transceiver unit 801 in the wireless device 800 is equivalent to the antenna 702 in the wireless device 700 , and the processing unit 802 in the wireless device 800 may be equivalent to the radio frequency circuit 701 in the wireless device 700 , or equivalent to the switch circuit 703 .

[0077] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned embodiments and will not be repeated here.

Claims

1. An antenna, characterized in that: include: A reflector and a main oscillator, wherein the reflector comprises a multi-section metal structure, and the multi-section metal structure comprises a first metal structure, a second metal structure and a third metal structure; A PIN diode is disposed on the first metal structure; The first metal structure, the second metal structure and the third metal structure are connected in sequence, the third metal structure is parallel to the first metal structure, and the length of the multi-segment metal structure is within a first value range, and the first value range is 0.225 to 0.275 times the wavelength corresponding to the working frequency band of the reflector; The polarization directions of the first metal structure and the main oscillator are parallel, the second metal structure is perpendicular to the first metal structure, and the multiple reflectors are evenly placed on a circle with the main oscillator as the center. The distance between the reflector and the center of the circle is within a second value range, and the second value range is 0.17 to 0.25 times the wavelength corresponding to the working frequency band of the reflector.

2. The antenna according to claim 1, characterized in that The PIN diode is used to control the state of the reflector to be in an operating state or a closed state.

3. The antenna according to claim 1 or 2, characterized in that: An inductor is connected in parallel at both ends of the PIN diode. The inductor includes a distributed inductor and a DC-isolating capacitor. The DC-isolating capacitor includes a distributed capacitor or a lumped capacitor.

4. The antenna according to claim 3, characterized in that: The resonant frequency of the resonant circuit of the PIN diode and the distributed inductor is within the operating frequency band of the main oscillator.

5. The antenna according to claim 3 or 4, characterized in that: The length of the distributed inductor is within a third value range.

6. The antenna according to claim 5, characterized in that The third value range depends on the wavelength corresponding to the working frequency band of the reflector.

7. A wireless device, characterized in that: The wireless device comprises a radio frequency circuit, a switch circuit and the antenna according to any one of claims 1 to 6, wherein the radio frequency circuit is connected to the main oscillator in the antenna, and the switch circuit is connected to the reflector in the antenna.

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