Display substrate and manufacturing method thereof, and display device

Abstract

A display substrate and a preparation method thereof, and a display device. The display substrate comprises: a substrate, a display structure layer arranged on the substrate, a light conversion layer arranged on a side of the display structure layer away from the substrate, and a light processing layer arranged on a side of the light conversion layer away from the substrate; the light conversion layer comprises at least a red quantum dot layer, a green quantum dot layer, and a light-transmitting layer; the light processing layer comprises a plurality of light processing structures for improving light extraction efficiency and a covering layer arranged on a side of the light processing structure away from the substrate; the orthographic projection of the light processing structure on the substrate at least partially overlaps with the orthographic projection of the red quantum dot layer on the substrate; the orthographic projection of the light processing structure on the substrate at least partially overlaps with the orthographic projection of the green quantum dot layer on the substrate; and the refractive index of the light processing structure is greater than the refractive index of the covering layer.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to the field of display technology, and in particular, to a display substrate and a method for preparing the same, and a display device. Background Art

[0002] Organic Light Emitting Diode (OLED) is an active light-emitting display device with the advantages of self-luminescence, wide viewing angle, high contrast, low power consumption, extremely high response speed, light weight, flexibility and low cost. It has become the mainstream product in the current display field.

[0003] The inventors of the present application have found through research that the existing display devices using OLED+quantum dot (Quantum-dot, QD) materials have the problem of white light color deviation. Summary of the invention

[0004] The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.

[0005] The embodiments of the present disclosure provide a display substrate and a method for preparing the same, and a display device to solve the problem of white light color shift in a display device using OLED+QD.

[0006] In a first aspect, an embodiment of the present disclosure provides a display substrate, comprising: a substrate, a display structure layer arranged on the substrate, a light conversion layer arranged on a side of the display structure layer away from the substrate, and a light processing layer arranged on a side of the light conversion layer away from the substrate; the light conversion layer comprises at least a red quantum dot layer, a green quantum dot layer and a light-transmitting layer, the light processing layer comprises a plurality of light processing structures for improving light extraction efficiency and a covering layer arranged on a side of the light processing structure away from the substrate, the orthographic projection of the light processing structure on the substrate at least partially overlaps with the orthographic projection of the red quantum dot layer on the substrate, the orthographic projection of the light processing structure on the substrate at least partially overlaps with the orthographic projection of the green quantum dot layer on the substrate, and the refractive index of the light processing structure is greater than the refractive index of the covering layer.

[0007] In an exemplary embodiment, the light processing structure includes a first light processing structure, the orthographic projection of the first light processing structure on the substrate includes the orthographic projection of the red quantum dot layer on the substrate, and the orthographic projection of the first light processing structure on the substrate includes the orthographic projection of the green quantum dot layer on the substrate.

[0008] In an exemplary embodiment, the first light processing structure arranged on the red quantum dot layer and the first light processing structure arranged on the green quantum dot layer are arranged at intervals; or, the first light processing structure arranged on the red quantum dot layer and the first light processing structure arranged on the green quantum dot layer are interconnected as an integrated structure.

[0009] In an exemplary embodiment, in a plane perpendicular to the substrate, the cross-sectional shape of the first light processing structure is a trapezoid, the length of the upper base of the trapezoid is G1, the length of the lower base is E1, and the height is F1, and the dimensional relationship of the trapezoid satisfies: 0.65 microns < (F1 / ((E1-G1) / 2)) < 0.99 microns.

[0010] In an exemplary embodiment, the light conversion layer also includes a first black matrix, which is respectively arranged between the red quantum dot layer, the green quantum dot layer and the light-transmitting layer; the light processing structure includes a second light processing structure, which is arranged on a side of the light conversion layer away from the substrate, and the orthographic projection of the second light processing structure on the substrate at least partially overlaps with the orthographic projection of the first black matrix on the substrate; the orthographic projection of the second light processing structure on the substrate does not overlap with the orthographic projection of the light-transmitting layer on the substrate.

[0011] In an exemplary embodiment, in a plane perpendicular to the substrate, the cross-sectional shape of the second light processing structure is a trapezoid, the length of the upper base of the trapezoid is G2, the length of the lower base is E2, and the height is F2, and the geometric dimension relationship of the trapezoid satisfies: 0.766 microns < (F2 / ((E2-G2) / 2)) < 0.939 microns.

[0012] In an exemplary embodiment, the light conversion layer also includes a first black matrix, which is respectively arranged between the red quantum dot layer, the green quantum dot layer and the light-transmitting layer; the light processing structure includes a first light processing structure and a second light processing structure, the orthographic projection of the first light processing structure on the substrate includes the orthographic projection of the red quantum dot layer and the green quantum dot layer on the substrate, the orthographic projection of the second light processing structure on the substrate at least partially overlaps with the orthographic projection of the first black matrix on the substrate, and the orthographic projection of the second light processing structure on the substrate does not overlap with the orthographic projection of the light-transmitting layer on the substrate.

[0013] In an exemplary embodiment, the first light management structure is located on a side of the second light management structure away from the substrate, and a refractive index of the second light management structure is smaller than a refractive index of the first light management structure.

[0014] In an exemplary embodiment, the refractive index of the first light management structure is set to be greater than or equal to 1.75 and less than or equal to 1.85; the refractive index of the second light management structure is set to be greater than or equal to 1.42 and less than or equal to 1.53.

[0015] In an exemplary embodiment, the display structure layer includes a driving circuit layer, a light-emitting structure layer and a packaging structure layer which are sequentially stacked on the substrate; wherein the light-emitting structure layer includes at least a pixel definition layer, on which a pixel opening is provided; the packaging structure layer includes a plurality of third light processing structures for improving light extraction efficiency, and the orthographic projection of the third light processing structure on the substrate includes the orthographic projection of the pixel opening on the substrate.

[0016] In an exemplary embodiment, in a plane perpendicular to the substrate, the cross-sectional shape of the third light processing structure is a trapezoid, the length of the upper base of the trapezoid is G3, the length of the lower base is E3, and the height is F3, and the geometric dimension relationship of the trapezoid satisfies: 0.75 microns < (F3 / ((E3-G3) / 2)) < 0.9 microns; the refractive index of the third light processing structure is set to be greater than or equal to 1.7 and less than or equal to 1.8.

[0017] In an exemplary embodiment, in a plane perpendicular to the substrate, the length of the pixel opening is C, and the size relationship between the third light processing structure and the pixel opening satisfies: C≤G3<E3<C+8 micrometers.

[0018] In an exemplary embodiment, the orthographic projection of the quantum dot layer on the substrate includes the orthographic projection of the pixel opening on the substrate, and the distance between the orthographic projection of the quantum dot layer on the substrate and the adjacent sides of the orthographic projection of the pixel opening on the substrate is less than or equal to 8 microns; there is a pixel dam between adjacent pixel openings, and in a plane perpendicular to the substrate, the length of the orthographic projection of the pixel dam on the substrate is A, the cross-sectional length of the red quantum dot layer is Dr, the cross-sectional length of the green quantum dot layer is Dg, and the cross-sectional length of the first black matrix located between the red quantum dot layer and the green quantum dot layer is Db, Dr / 2+Dg / 2+Db≤A.

[0019] In a second aspect, an embodiment of the present disclosure provides a display device, comprising the display substrate as described above.

[0020] In a third aspect, an embodiment of the present disclosure provides a method for preparing a display substrate, the method comprising: forming a display structure layer on a substrate; forming a light conversion layer on a side of the display structure layer away from the substrate, the light conversion layer comprising at least a red quantum dot layer, a green quantum dot layer and a light-transmitting layer; forming a light processing layer on a side of the light conversion layer away from the substrate, the light processing layer comprising a plurality of light processing structures for improving light extraction efficiency and a covering layer arranged on a side of the light processing structure away from the substrate, the orthographic projection of the light processing structure on the substrate at least partially overlaps with the orthographic projection of the red quantum dot layer on the substrate, the orthographic projection of the light processing structure on the substrate at least partially overlaps with the orthographic projection of the green quantum dot layer on the substrate, and the refractive index of the light processing structure is greater than the refractive index of the covering layer.

[0021] The display substrate proposed in the embodiment of the present disclosure is provided with a light processing layer on the side of the light conversion layer away from the substrate. The light processing layer includes a plurality of light processing structures for improving light extraction efficiency and a covering layer provided on the side of the light processing structure away from the substrate. The refractive index of the light processing structure is greater than the refractive index of the covering layer. The orthographic projection of the light processing structure on the substrate at least partially overlaps with the orthographic projection of the red quantum dot layer on the substrate. The orthographic projection of the light processing structure on the substrate at least partially overlaps with the orthographic projection of the green quantum dot layer on the substrate. By improving the light extraction efficiency of the red quantum dot layer and the green quantum dot layer through the light processing structure, the attenuation degree of the light brightness of the red quantum dot layer and the green quantum dot layer with the change of viewing angle can be increased, thereby solving the problem of white light color deviation of the display device using OLED+QD.

[0022] Other aspects will be apparent upon reading and understanding the drawings and detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The accompanying drawings are used to provide further understanding of the technical solution of the present disclosure and constitute a part of the specification. Together with the embodiments of the present disclosure, they are used to explain the technical solution of the present disclosure and do not constitute a limitation on the technical solution of the present disclosure.

[0024] Figure 1 is a structural schematic diagram of an electronic device;

[0025] Figure 2 is a schematic diagram of an equivalent circuit of a pixel driving circuit;

[0026] Figure 3 This is a schematic diagram of a planar structure of a display substrate disclosed in the present invention;

[0027] Figure 4a is a cross-sectional schematic diagram showing a substrate in an exemplary embodiment of the present disclosure;

[0028] Figure 4bis a schematic diagram of the dimensions of a first light processing structure in an exemplary embodiment of the present disclosure;

[0029] Figure 5 is a cross-sectional schematic diagram showing a substrate in another exemplary embodiment of the present disclosure;

[0030] Figure 6 is a cross-sectional schematic diagram showing a substrate in yet another exemplary embodiment of the present disclosure;

[0031] Figure 7a is a cross-sectional schematic diagram showing a substrate in yet another exemplary embodiment of the present disclosure;

[0032] Figure 7b is a schematic diagram of the dimensions of a second light processing structure in an exemplary embodiment of the present disclosure;

[0033] Figure 8 is a cross-sectional schematic diagram showing a substrate in yet another exemplary embodiment of the present disclosure;

[0034] Figure 9a is a cross-sectional schematic diagram showing a substrate in yet another exemplary embodiment of the present disclosure;

[0035] Figure 9b is a schematic diagram of the dimensions of a third light processing structure in an exemplary embodiment of the present disclosure;

[0036] Fig.10 A schematic diagram of the dimensions of a pixel definition layer in an exemplary embodiment of the present disclosure;

[0037] Fig.11 is a top view of a pixel opening and a red quantum dot layer in an exemplary embodiment of the present disclosure;

[0038] Fig.12 The relationship curves between brightness and angle of OLED devices and quantum dot materials of different colors;

[0039] Fig.13 The blue light-emitting device, the light conversion layer and the brightness and angle relationship curve under ideal conditions;

[0040] Fig.14 for Figure 8 The relationship curve between brightness and angle of the display substrate (with the third light processing structure) and the display substrate in the embodiment shown in FIG9 ;

[0041] Fig.15 Adjust the white light color deviation curve before and after the structure;

[0042] Figures 16 to 21 FIG. 4 is a schematic diagram of a process for preparing a display substrate in an exemplary embodiment.

[0043] Description of reference numerals:

[0044] 10-substrate; 20-display structure layer; 21-driving circuit layer; 22-pixel definition layer; 23-light-emitting device; 24-first sublayer; 25-second sublayer; 26-third sublayer; 30-light conversion layer; 31-first black matrix; 32-quantum dot layer; 40-flat layer; 50-light processing layer; 51-first light processing structure; 52-covering layer; 53-second light processing structure; 60-color film layer; 61-second black matrix; 62-filter layer; 70-module layer; 53-second light processing structure; 201-anode; 203-organic light-emitting layer; 204-cathode. DETAILED DESCRIPTION

[0045] The embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. Note that the embodiments can be implemented in a plurality of different forms. A person skilled in the art can easily understand the fact that the methods and contents can be transformed into various forms without departing from the purpose and scope of the present disclosure. Therefore, the present disclosure should not be interpreted as being limited to the contents described in the following embodiments. In the absence of conflict, the embodiments in the present disclosure and the features in the embodiments can be arbitrarily combined with each other.

[0046] The proportions of the drawings in this disclosure can be used as a reference in the actual process, but are not limited to this. For example: the width-to-length ratio of the channel, the thickness and spacing of each film layer, the width and spacing of each signal line can be adjusted according to actual needs. The number of pixels in the display substrate and the number of sub-pixels in each pixel are not limited to the numbers shown in the figures. The drawings described in this disclosure are only structural schematic diagrams, and one method of this disclosure is not limited to the shapes or values ​​shown in the drawings.

[0047] In the present specification, ordinal numbers such as “first”, “second” and “third” are provided to avoid confusion among constituent elements, and are not intended to limit the number.

[0048] In this specification, for the sake of convenience, the words and phrases indicating the orientation or positional relationship, such as "middle", "upper", "lower", "front", "back", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., are used to illustrate the positional relationship of the constituent elements with reference to the drawings. This is only for the convenience of describing this specification and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation of the present disclosure. The positional relationship of the constituent elements is appropriately changed according to the direction in which each constituent element is described. Therefore, it is not limited to the words and phrases described in the specification, and can be appropriately replaced according to the situation.

[0049] In this specification, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate, or the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in this disclosure can be understood according to specific circumstances.

[0050] In this specification, a transistor refers to an element including at least three terminals: a gate electrode, a drain electrode, and a source electrode. The transistor has a channel region between a drain electrode (drain electrode terminal, drain region, or drain electrode) and a source electrode (source electrode terminal, source region, or source electrode), and current can flow through the drain electrode, the channel region, and the source electrode. Note that in this specification, the channel region refers to a region where current mainly flows.

[0051] In this specification, the first electrode may be a drain electrode and the second electrode may be a source electrode, or the first electrode may be a source electrode and the second electrode may be a drain electrode. In the case of using transistors with opposite polarities or when the current direction changes during circuit operation, the functions of the "source electrode" and the "drain electrode" are sometimes interchanged. Therefore, in this specification, the "source electrode" and the "drain electrode" may be interchanged, and the "source terminal" and the "drain terminal" may be interchanged.

[0052] In this specification, "electrical connection" includes the case where components are connected together through an element having some electrical function. There is no particular limitation on the "element having some electrical function" as long as it can transmit electrical signals between connected components. Examples of "element having some electrical function" include not only electrodes and wiring, but also switching elements such as transistors, resistors, inductors, capacitors, and other elements having various functions.

[0053] In this specification, "parallel" means a state where the angle formed by two straight lines is greater than -10° and less than 10°, and therefore, also includes a state where the angle is greater than -5° and less than 5°. In addition, "perpendicular" means a state where the angle formed by two straight lines is greater than 80° and less than 100°, and therefore, also includes a state where the angle is greater than 85° and less than 95°.

[0054] In this specification, "film" and "layer" may be interchanged. For example, "conductive layer" may be replaced by "conductive film". Similarly, "insulating film" may be replaced by "insulating layer".

[0055] The triangles, rectangles, trapezoids, pentagons or hexagons in this specification are not in the strict sense, and may be approximate triangles, rectangles, trapezoids, pentagons or hexagons, etc. There may be some small deformations caused by tolerances, and there may be chamfers, arc edges and deformations.

[0056] The term "about" in the present disclosure refers to a numerical value that is not strictly limited to allow for process and measurement errors.

[0057] Figure 1 FIG. 1 is a schematic diagram of the structure of an electronic device. Figure 1As shown, the electronic device may include a timing controller, a data driver, a scan driver, a light emitting driver and a pixel array, the timing controller is respectively connected to the data driver, the scan driver and the light emitting driver, the data driver is respectively connected to a plurality of data signal lines (D1 to Dn), the scan driver is respectively connected to a plurality of scan signal lines (S1 to Sm), and the light emitting driver is respectively connected to a plurality of light emitting signal lines (E1 to Eo). The pixel array may include a plurality of sub-pixels Pxij, i and j may be natural numbers, at least one sub-pixel Pxij may include a circuit unit and a light emitting device connected to the circuit unit, the circuit unit may include a pixel driving circuit, and the pixel driving circuit is connected to the scan signal line, the data signal line and the light emitting signal line. In an exemplary embodiment, the timing controller may provide a grayscale value and a control signal suitable for the specifications of the data driver to the data driver, may provide a clock signal suitable for the specifications of the scan driver, a scan start signal, etc. to the scan driver, and may provide a clock signal suitable for the specifications of the light emitting driver, an emission stop signal, etc. to the light emitting driver. The data driver may generate a data voltage to be provided to the data signal lines D1, D2, D3, ... and Dn using the grayscale value and the control signal received from the timing controller. For example, the data driver may sample the grayscale value using the clock signal, and apply the data voltage corresponding to the grayscale value to the data signal lines D1 to Dn in units of pixel rows, where n may be a natural number. The scan driver may generate a scan signal to be provided to the scan signal lines S1, S2, S3, ... and Sm by receiving a clock signal, a scan start signal, etc. from the timing controller. For example, the scan driver may sequentially provide a scan signal with a conduction level pulse to the scan signal lines S1 to Sm. For example, the scan driver may be constructed in the form of a shift register, and may sequentially transmit the scan start signal provided in the form of a conduction level pulse to the next level circuit under the control of the clock signal to generate a scan signal, where m may be a natural number. The light emitting driver may generate an emission signal to be provided to the light emitting signal lines E1, E2, E3, ... and Eo by receiving a clock signal, an emission stop signal, etc. from the timing controller. For example, the light emitting driver may sequentially provide an emission signal having a cut-off level pulse to the light emitting signal lines E1 to Eo. For example, the light emitting driver may be constructed in the form of a shift register, and may generate an emission signal in a manner of sequentially transmitting an emission stop signal provided in the form of a cut-off level pulse to a next stage circuit under the control of a clock signal, and o may be a natural number.

[0058] Figure 2 FIG. 1 is a schematic diagram of an equivalent circuit of a pixel driving circuit. In an exemplary embodiment, the pixel driving circuit may be a 3T1C, 4T1C, 5T1C, 5T2C, 6T1C or 7T1C structure. Figure 2As shown, the pixel driving circuit may include 7 transistors (transistor T1 to the seventh transistor T7), 1 storage capacitor C, and the pixel driving circuit is connected to 7 signal lines (data signal line D, first scanning signal line S1, second scanning signal line S2, light emitting signal line E, initial signal line INIT, first power line VDD and second power line VSS).

[0059] In an exemplary embodiment, the pixel driving circuit may include a first node N1, a second node N2, and a third node N3. The first node N1 is respectively connected to the first electrode of the third transistor T3, the second electrode of the fourth transistor T4, and the second electrode of the fifth transistor T5, the second node N2 is respectively connected to the second electrode of the transistor, the first electrode of the second transistor T2, the control electrode of the third transistor T3, and the second end of the storage capacitor C, and the third node N3 is respectively connected to the second electrode of the second transistor T2, the second electrode of the third transistor T3, and the first electrode of the sixth transistor T6.

[0060] In an exemplary embodiment, a first end of the storage capacitor C is connected to the first power line VDD, and a second end of the storage capacitor C is connected to the second node N2 , ie, the second end of the storage capacitor C is connected to the control electrode of the third transistor T3 .

[0061] The control electrode of the first transistor T1 is connected to the second scan signal line S2, the first electrode of the first transistor T1 is connected to the initial signal line INIT, and the second electrode of the first transistor is connected to the second node N2. When the on-level scan signal is applied to the second scan signal line S2, the first transistor T1 transmits the initialization voltage to the control electrode of the third transistor T3, so that the charge amount of the control electrode of the third transistor T3 is initialized.

[0062] The control electrode of the second transistor T2 is connected to the first scan signal line S1, the first electrode of the second transistor T2 is connected to the second node N2, and the second electrode of the second transistor T2 is connected to the third node N3. When the on-level scan signal is applied to the first scan signal line S1, the second transistor T2 connects the control electrode of the third transistor T3 to the second electrode.

[0063] The control electrode of the third transistor T3 is connected to the second node N2, that is, the control electrode of the third transistor T3 is connected to the second end of the storage capacitor C, the first electrode of the third transistor T3 is connected to the first node N1, and the second electrode of the third transistor T3 is connected to the third node N3. The third transistor T3 can be called a driving transistor, and the third transistor T3 determines the amount of driving current flowing between the first power line VDD and the second power line VSS according to the potential difference between its control electrode and the first electrode.

[0064] The control electrode of the fourth transistor T4 is connected to the first scan signal line S1, the first electrode of the fourth transistor T4 is connected to the data signal line D, and the second electrode of the fourth transistor T4 is connected to the first node N1. The fourth transistor T4 can be called a switching transistor, a scan transistor, etc. When the on-level scan signal is applied to the first scan signal line S1, the fourth transistor T4 enables the data voltage of the data signal line D to be input to the pixel driving circuit.

[0065] The control electrode of the fifth transistor T5 is connected to the light emitting signal line E, the first electrode of the fifth transistor T5 is connected to the first power line VDD, and the second electrode of the fifth transistor T5 is connected to the first node N1. The control electrode of the sixth transistor T6 is connected to the light emitting signal line E, the first electrode of the sixth transistor T6 is connected to the third node N3, and the second electrode of the sixth transistor T6 is connected to the first electrode of the light emitting device. The fifth transistor T5 and the sixth transistor T6 can be called light emitting transistors. When the on-level light emitting signal is applied to the light emitting signal line E, the fifth transistor T5 and the sixth transistor T6 form a driving current path between the first power line VDD and the second power line VSS to make the light emitting device emit light.

[0066] The control electrode of the seventh transistor T7 is connected to the second scan signal line S2, the first electrode of the seventh transistor T7 is connected to the initial signal line INIT, and the second electrode of the seventh transistor T7 is connected to the first electrode of the light emitting device. When the on-level scan signal is applied to the second scan signal line S2, the seventh transistor T7 transmits the initialization voltage to the first electrode of the light emitting device to initialize or release the charge accumulated in the first electrode of the light emitting device.

[0067] In an exemplary embodiment, the light-emitting device can be an OLED, including a stacked first electrode (anode), an organic light-emitting layer, and a second electrode (cathode), or can be a QLED, including a stacked first electrode (anode), a quantum dot light-emitting layer, and a second electrode (cathode).

[0068] In an exemplary embodiment, the second electrode of the light emitting device is connected to the second power line VSS, the signal of the second power line VSS is a low level signal, and the signal of the first power line VDD continuously provides a high level signal.

[0069] In an exemplary embodiment, the transistors T1 to the seventh transistor T7 may be P-type transistors, or may be N-type transistors. Using the same type of transistors in the pixel driving circuit can simplify the process flow, reduce the process difficulty of the display panel, and improve the yield of the product. In some possible implementations, the transistors T1 to the seventh transistor T7 may include P-type transistors and N-type transistors.

[0070] In an exemplary embodiment, the transistors T1 to the seventh transistor T7 may be low-temperature polysilicon thin film transistors, or may be oxide thin film transistors, or may be low-temperature polysilicon thin film transistors and oxide thin film transistors. The active layer of the low-temperature polysilicon thin film transistor uses low-temperature polysilicon (Low Temperature Poly-Silicon, referred to as LTPS), and the active layer of the oxide thin film transistor uses oxide semiconductor (Oxide). Low-temperature polysilicon thin film transistors have the advantages of high mobility and fast charging, and oxide thin film transistors have the advantages of low leakage current. Low-temperature polysilicon thin film transistors and oxide thin film transistors are integrated on a display substrate to form a low-temperature polycrystalline oxide (Low Temperature Polycrystalline Oxide, referred to as LTPO) display substrate, which can take advantage of the advantages of both, can achieve low-frequency driving, can reduce power consumption, and can improve display quality.

[0071] In an exemplary embodiment, the light emitting device may be an organic light emitting diode (OLED) including a first electrode (anode), an organic light emitting layer, and a second electrode (cathode) stacked.

[0072] In an exemplary embodiment, Figure 2 Taking the example that all the seven transistors in the pixel driving circuit are P-type transistors, the working process of the pixel driving circuit may include:

[0073] The first stage A1 is called the reset stage. The signal of the second scan signal line S2 is a low-level signal, and the signals of the first scan signal line S1 and the light-emitting signal line E are high-level signals. The signal of the second scan signal line S2 is a low-level signal, which turns on the first transistor T1 and the seventh transistor T7. The first transistor T1 is turned on so that the initial voltage of the initial signal line INIT is provided to the second node N2, the storage capacitor C is initialized (reset), and the original data voltage in the storage capacitor is cleared. The seventh transistor T7 is turned on so that the initial voltage of the initial signal line INIT is provided to the first electrode of the OLED, the first electrode of the OLED is initialized (reset), the pre-stored voltage inside it is cleared, the initialization is completed, and the OLED is ensured not to emit light. The signals of the first scan signal line S1 and the light-emitting signal line E are high-level signals, which turns off the second transistor T2, the fourth transistor T4, the fifth transistor T5, and the sixth transistor T6.

[0074] The second stage A2 is called the data writing stage or the threshold compensation stage. The signal of the first scanning signal line S1 is a low-level signal, the signals of the second scanning signal line S2 and the light-emitting signal line E are high-level signals, and the data signal line D outputs a data voltage. In this stage, since the second end of the storage capacitor C is at a low level, the third transistor T3 is turned on. The signal of the first scanning signal line S1 is a low-level signal, which turns on the second transistor T2, the fourth transistor T4 and the seventh transistor T7. The second transistor T2 and the fourth transistor T4 are turned on so that the data voltage output by the data signal line D is provided to the second node N2 through the first node N1, the turned-on third transistor T3, the third node N3, and the turned-on second transistor T2, and the difference between the data voltage output by the data signal line D and the threshold voltage of the third transistor T3 is charged into the storage capacitor C. The voltage of the second end (the second node N2) of the storage capacitor C is Vd-|Vth|, where Vd is the data voltage output by the data signal line D, and Vth is the threshold voltage of the third transistor T3. The signal of the second scanning signal line S2 is a high-level signal, which turns off the first transistor T1 and the seventh transistor T7. The signal of the light emitting signal line E is a high level signal, which turns off the fifth transistor T5 and the sixth transistor T6.

[0075] The third stage A3 is called the light-emitting stage, the signal of the light-emitting signal line E is a low-level signal, and the signals of the first scanning signal line S1 and the second scanning signal line S2 are high-level signals. The signal of the light-emitting signal line E is a low-level signal, which turns on the fifth transistor T5 and the sixth transistor T6, and the power supply voltage output by the first power supply line VDD provides a driving voltage to the first electrode of the OLED through the turned-on fifth transistor T5, the third transistor T3 and the sixth transistor T6, driving the OLED to emit light.

[0076] During the driving process of the pixel driving circuit, the driving current flowing through the third transistor T3 (driving transistor) is determined by the voltage difference between its gate electrode and the first electrode. Since the voltage of the second node N2 is Vdata-|Vth|, the driving current of the third transistor T3 is:

[0077] I=K*(Vgs-Vth) 2 =K*[(Vdd-Vd+|Vth|)-Vth] 2 =K*[(Vdd-Vd] 2

[0078] Among them, I is the driving current flowing through the third transistor T3, that is, the driving current driving the OLED, K is a constant, Vgs is the voltage difference between the gate electrode and the first electrode of the third transistor T3, Vth is the threshold voltage of the third transistor T3, Vd is the data voltage output by the data signal line D, and Vdd is the power supply voltage output by the first power supply line VDD.

[0079] The line width of the luminescence spectrum of quantum dot materials is usually less than 20nm, which can ensure a wider display color gamut range and present a more layered and delicate picture quality effect. As an inorganic material, it has a longer service life and can be prepared based on processes such as inkjet printing and spin coating, which can further reduce the high cost caused by evaporation. In some technologies, the OLED+QD luminescence form is used in the display device, and the red quantum dot (RQD) material and the green quantum dot (GQD) material are excited by a blue monochrome backlight to achieve the emission of white light.

[0080] The inventors of this application have found that in existing display devices using OLED+QD, as the viewing angle changes, there is a difference in the brightness attenuation of red and green light and the brightness attenuation of blue light. This brightness difference causes the display device to have a white light color deviation. Due to the Lambertian emission characteristics of the quantum dot material itself, the light will be emitted in all directions when emitting light. The brightness attenuation of GQD and RQD varies little with the viewing angle, while the brightness attenuation of the light emitted by the blue light backlight source varies greatly with the viewing angle. This uneven brightness attenuation causes the display device to have a white light color deviation. In addition, the overall light output efficiency of the display device is not high, which affects the user experience.

[0081] Figure 3 FIG. 1 is a schematic diagram of a planar structure of a display substrate disclosed in the present invention. Figure 3 As shown, the display substrate may include a plurality of pixel units P arranged in a matrix, at least one of the plurality of pixel units P includes a first sub-pixel P1 emitting a first color light, a second sub-pixel P2 emitting a second color light, and a third sub-pixel P3 emitting a third color light, and the first sub-pixel P1, the second sub-pixel P2, and the third sub-pixel P3 each include a pixel driving circuit and a light-emitting device. The pixel driving circuits in the first sub-pixel P1, the second sub-pixel P2, and the third sub-pixel P3 are respectively connected to the scanning signal line, the data signal line, and the light-emitting signal line, and the pixel driving circuit is configured to receive the data voltage transmitted by the data signal line under the control of the scanning signal line and the light-emitting signal line, and output a corresponding current to the light-emitting device. The light-emitting devices in the first sub-pixel P1, the second sub-pixel P2, and the third sub-pixel P3 are respectively connected to the pixel driving circuits of the sub-pixels in which they are located, and the light-emitting devices are configured to emit light of corresponding brightness in response to the current output by the pixel driving circuit of the sub-pixel in which they are located.

[0082] In an exemplary embodiment, the pixel unit P may include a red (R) sub-pixel, a green (G) sub-pixel, and a blue (B) sub-pixel. In an exemplary embodiment, the shape of the sub-pixel in the pixel unit may be a rectangle, a rhombus, a pentagon, or a hexagon. The three sub-pixels may be arranged in a horizontal parallel, vertical parallel, or in a zigzag manner, or may be arranged in a RealRGB, SRGB, and diamond-like manner, which is not limited in the present disclosure. In an exemplary embodiment, a blue light-emitting device may be provided in the pixel unit P, and a light-transmitting layer, a green quantum dot layer, and a red quantum dot layer may be provided on the side of the first sub-pixel P1, the second sub-pixel P2, and the third sub-pixel P3 away from the substrate, respectively. After the light emitted by the blue light-emitting device passes through the quantum dot layer and the light-transmitting layer of the corresponding color, the areas corresponding to the first sub-pixel P1, the second sub-pixel P2, and the third sub-pixel P3 may emit blue, green, red, and light, respectively. The light-emitting colors of the first sub-pixel P1, the second sub-pixel P2, and the third sub-pixel P3 may be set as needed, which is not limited in the present disclosure.

[0083] An embodiment of the present disclosure provides a display substrate, comprising: a substrate, a display structure layer arranged on the substrate, a light conversion layer arranged on a side of the display structure layer away from the substrate, and a light processing layer arranged on a side of the light conversion layer away from the substrate; the light conversion layer comprises at least a red quantum dot layer, a green quantum dot layer and a light-transmitting layer, the light processing layer comprises a plurality of light processing structures for improving light extraction efficiency and a covering layer arranged on a side of the light processing structure away from the substrate, the orthographic projection of the light processing structure on the substrate at least partially overlaps with the orthographic projection of the red quantum dot layer on the substrate, the orthographic projection of the light processing structure on the substrate at least partially overlaps with the orthographic projection of the green quantum dot layer on the substrate, and the refractive index of the light processing structure is greater than the refractive index of the covering layer.

[0084] The display substrate proposed in the embodiment of the present disclosure is provided with a light processing layer on the side of the light conversion layer away from the substrate. The light processing layer includes a plurality of light processing structures for improving light extraction efficiency and a covering layer provided on the side of the light processing structure away from the substrate. The refractive index of the light processing structure is greater than the refractive index of the covering layer. The orthographic projection of the light processing structure on the substrate at least partially overlaps with the orthographic projection of the red quantum dot layer on the substrate. The orthographic projection of the light processing structure on the substrate at least partially overlaps with the orthographic projection of the green quantum dot layer on the substrate. By improving the light extraction efficiency of the red quantum dot layer and the green quantum dot layer through the light processing structure, the attenuation degree of the light brightness of the red quantum dot layer and the green quantum dot layer with the change of viewing angle can be increased, thereby solving the problem of white light color deviation of the display device using OLED+QD.

[0085] In an exemplary embodiment, the light processing structure includes a first light processing structure, the orthographic projection of the first light processing structure on the substrate includes the orthographic projection of the red quantum dot layer on the substrate, and the orthographic projection of the first light processing structure on the substrate includes the orthographic projection of the green quantum dot layer on the substrate.

[0086] In an exemplary embodiment, the first light processing structure arranged on the red quantum dot layer and the first light processing structure arranged on the green quantum dot layer are arranged at intervals; or, the first light processing structure arranged on the red quantum dot layer and the first light processing structure arranged on the green quantum dot layer are interconnected as an integrated structure.

[0087] In an exemplary embodiment, in a plane perpendicular to the substrate, the cross-sectional shape of the first light processing structure is a trapezoid, the length of the upper base of the trapezoid is G1, the length of the lower base is E1, and the height is F1, and the dimensional relationship of the trapezoid satisfies: 0.65 microns < (F1 / ((E1-G1) / 2)) < 0.99 microns.

[0088] In an exemplary embodiment, the light conversion layer also includes a first black matrix, which is respectively arranged between the red quantum dot layer, the green quantum dot layer and the light-transmitting layer; the light processing structure includes a second light processing structure, which is arranged on a side of the light conversion layer away from the substrate, and the orthographic projection of the second light processing structure on the substrate at least partially overlaps with the orthographic projection of the first black matrix on the substrate; the orthographic projection of the second light processing structure on the substrate does not overlap with the orthographic projection of the light-transmitting layer on the substrate.

[0089] In an exemplary embodiment, in a plane perpendicular to the substrate, the cross-sectional shape of the second light processing structure is a trapezoid, the length of the upper base of the trapezoid is G2, the length of the lower base is E2, and the height is F2, and the geometric dimension relationship of the trapezoid satisfies: 0.766 microns < (F2 / ((E2-G2) / 2)) < 0.939 microns.

[0090] In an exemplary embodiment, the light conversion layer also includes a first black matrix, which is respectively arranged between the red quantum dot layer, the green quantum dot layer and the light-transmitting layer; the light processing structure includes a first light processing structure and a second light processing structure, the orthographic projection of the first light processing structure on the substrate includes the orthographic projection of the red quantum dot layer and the green quantum dot layer on the substrate, the orthographic projection of the second light processing structure on the substrate at least partially overlaps with the orthographic projection of the first black matrix on the substrate, and the orthographic projection of the second light processing structure on the substrate does not overlap with the orthographic projection of the light-transmitting layer on the substrate.

[0091] In an exemplary embodiment, the first light management structure is located on a side of the second light management structure away from the substrate, and a refractive index of the second light management structure is smaller than a refractive index of the first light management structure.

[0092] In an exemplary embodiment, the refractive index of the first light management structure is set to be greater than or equal to 1.75 and less than or equal to 1.85; the refractive index of the second light management structure is set to be greater than or equal to 1.42 and less than or equal to 1.53.

[0093] The light processing structure may include only the first light processing structure, only the second light processing structure, or the first light processing structure and the second light processing structure. In the case where the light processing structure includes only the first light processing structure, light from the red quantum dot layer or the green quantum dot layer may be refracted after being incident on the first light processing structure, and the light is deflected toward the center of the red quantum dot layer or the center of the green quantum dot layer, thereby improving the light extraction efficiency. In the case where the light processing structure includes only the second light processing structure, light from the red quantum dot layer or the green quantum dot layer may be reflected to the center of the red quantum dot layer or the center of the green quantum dot layer after being incident on the surface of the second light processing structure, thereby improving the light extraction efficiency. In the case where the light processing structure includes a first light processing structure and a second light processing structure, the first light processing structure is located on a side of the second light processing structure away from the substrate, the two light processing structures correspond to quantum dot layers and a first black matrix of different colors, respectively, and the refractive index of the second light processing structure is smaller than that of the first light processing structure. Under the design of their positions and refractive indices, light from the red quantum dot layer or the green quantum dot layer is totally reflected at the interface between the second light processing structure and the first light processing structure after being incident on the surface of the second light processing structure, so that the light is deflected toward the center of the red quantum dot layer or the center of the green quantum dot layer, thereby achieving the effect of improving the light extraction efficiency.

[0094] In an exemplary embodiment, the display structure layer includes a driving circuit layer, a light-emitting structure layer and a packaging structure layer which are sequentially stacked on the substrate; wherein the light-emitting structure layer includes at least a pixel definition layer, on which a pixel opening is provided; the packaging structure layer includes a plurality of third light processing structures for improving light extraction efficiency, and the orthographic projection of the third light processing structure on the substrate includes the orthographic projection of the pixel opening on the substrate.

[0095] In an exemplary embodiment, in a plane perpendicular to the substrate, the cross-sectional shape of the third light processing structure is a trapezoid, the length of the upper base of the trapezoid is G3, the length of the lower base is E3, and the height is F3, and the geometric dimension relationship of the trapezoid satisfies: 0.75 microns < (F3 / ((E3-G3) / 2)) < 0.9 microns; the refractive index of the third light processing structure is set to be greater than or equal to 1.7 and less than or equal to 1.8.

[0096] In an exemplary embodiment, in a plane perpendicular to the substrate, the length of the pixel opening is C, and the size relationship between the third light processing structure and the pixel opening satisfies: C≤G3<E3<C+8 micrometers.

[0097] In an exemplary embodiment, the orthographic projection of the quantum dot layer on the substrate includes the orthographic projection of the pixel opening on the substrate, and the distance between the orthographic projection of the quantum dot layer on the substrate and the adjacent sides of the orthographic projection of the pixel opening on the substrate is less than or equal to 8 microns; there is a pixel dam between adjacent pixel openings, and in a plane perpendicular to the substrate, the length of the orthographic projection of the pixel dam on the substrate is A, the cross-sectional length of the red quantum dot layer is Dr, the cross-sectional length of the green quantum dot layer is Dg, and the cross-sectional length of the first black matrix located between the red quantum dot layer and the green quantum dot layer is Db, Dr / 2+Dg / 2+Db≤A.

[0098] Figure 4a is a cross-sectional schematic diagram showing a substrate in an exemplary embodiment of the present disclosure, Figure 3 The cross-sectional view along the AA direction shown in FIG. 1 illustrates the structure of three sub-pixels. Figure 4a As shown, on a plane perpendicular to the display substrate, the display substrate provided by the embodiment of the present disclosure may include a display structure layer 20 arranged on a substrate 10, a light conversion layer 30 arranged on a side of the display structure layer 20 away from the substrate 10, and a light processing layer 50 arranged on a side of the light conversion layer 30 away from the substrate 10.

[0099] In an exemplary embodiment, the display structure layer 20 may include a driving circuit layer, a light emitting structure layer, and an encapsulation structure layer stacked in sequence. The driving circuit layer may include a plurality of transistors and storage capacitors constituting a pixel driving circuit. The light emitting structure layer may include a pixel definition layer and a light emitting device, the pixel definition layer may include a plurality of pixel openings, the pixel openings form a light emitting area, and a pixel dam is formed between adjacent light emitting areas. The light emitting device may include an anode, an organic light emitting layer, and a cathode, and the light emitting device may be set as a blue light emitting device. The encapsulation structure layer may include a first sublayer, a second sublayer, and a third sublayer stacked, the first sublayer and the third sublayer may be made of inorganic materials, and the second sublayer may be made of organic materials.

[0100] In an exemplary embodiment, the light conversion layer 30 may include at least a plurality of first black matrices 31 and a plurality of quantum dot layers 32. The plurality of first black matrices 31 and the plurality of quantum dot layers 32 may be disposed on a side of the display structure layer 20 away from the substrate 10, the plurality of first black matrices 31 may be disposed at intervals, and light-transmitting openings may be formed between adjacent first black matrices 31, the plurality of quantum dot layers 32 may be disposed at intervals, and are respectively disposed in the plurality of light-transmitting openings, forming a quantum dot layer array separated by the first black matrices 31, and the first black matrices 31 are located between adjacent quantum dot layers 32.

[0101] In an exemplary embodiment, the display structure layer 20 may be provided with a blue light emitting device, and the plurality of quantum dot layers 32 may include a red quantum dot layer emitting red light, a green quantum dot layer emitting green light, and a light-transmitting layer, and the light-transmitting layer may at least transmit blue light. The red quantum dot layer, the green quantum dot layer, and the light-transmitting layer may be respectively provided corresponding to the blue light emitting device in the display structure layer 20, the red quantum dot layer may be located in the region where the red sub-pixel (third sub-pixel P3) is located, the green quantum dot layer may be located in the region where the green sub-pixel (second sub-pixel P2) is located, and the light-transmitting layer may be located in the region where the blue sub-pixel (first sub-pixel P1) is located. The light emitted by the blue light emitting device excites the red quantum dot layer and the green quantum dot layer to emit red light and green light respectively, and the light emitted by the blue light emitting device is still blue light after passing through the light-transmitting layer, so that the emitted red light, green light, and blue light can be used to display images.

[0102] In an exemplary embodiment, the light processing layer 50 may include a plurality of first light processing structures 51 disposed on a side of the light conversion layer 30 away from the substrate 10 and a covering layer 52 disposed on a side of the first light processing structures 51 away from the substrate 10. The plurality of first light processing structures 51 may be disposed on a side of the red quantum dot layer and the green quantum dot layer away from the substrate 10, and the positions of the plurality of first light processing structures 51 may correspond one to one with the positions of the plurality of red quantum dot layers and the plurality of green quantum dot layers. The covering layer 52 may be disposed on a side of the plurality of first light processing structures 51 away from the substrate 10, and the covering layer 52 may cover the plurality of first light processing structures 51.

[0103] In an exemplary embodiment, a surface of the cover layer 52 on a side away from the substrate 10 may be a planarized surface.

[0104] In an exemplary embodiment, the orthographic projection of the first light processing structure 51 on the substrate 10 at least partially overlaps with the orthographic projection of the corresponding red quantum dot layer on the substrate 10, and the orthographic projection of the first light processing structure 51 on the substrate 10 at least partially overlaps with the orthographic projection of the corresponding green quantum dot layer on the substrate 10.

[0105] In an exemplary embodiment, the orthographic projection of the first light processing structure 51 on the substrate 10 may include the orthographic projection of the corresponding red quantum dot layer on the substrate 10 , and the orthographic projection of the first light processing structure 51 on the substrate 10 may include the orthographic projection of the corresponding green quantum dot layer on the substrate 10 .

[0106] In an exemplary embodiment, the orthographic projection of the first light processing structure 51 on the substrate 10 may substantially coincide with the orthographic projection of the corresponding red quantum dot layer on the substrate 10 , and the orthographic projection of the first light processing structure 51 on the substrate 10 may substantially coincide with the orthographic projection of the corresponding green quantum dot layer on the substrate 10 .

[0107] In an exemplary embodiment, an orthographic projection of the first light management structure 51 on the substrate 10 may overlap with an orthographic projection of the first black matrix 31 on the substrate 10 .

[0108] In an exemplary embodiment, the light emitted by the red quantum dot layer and the green quantum dot layer are deflected toward the center of the red quantum dot layer and the center of the green quantum dot layer respectively after passing through the first light processing structure 51, which can improve the light extraction efficiency of the sub-pixel. In an exemplary embodiment, the center of the red quantum dot layer may be the geometric center of the red quantum dot layer, and the center of the green quantum dot layer may be the geometric center of the green quantum dot layer. In an exemplary embodiment, the shape of the first light processing structure 51 may be set according to the actual pixel morphology or process requirements. On a plane parallel to the display substrate, the shape of the first light processing structure 51 may be any one or more of the following: triangle, rectangle, pentagon, hexagon, circle and ellipse. In a plane perpendicular to the substrate, the cross-sectional shape of the first light processing structure 51 may include a trapezoid, an inverted trapezoid or a mushroom (T-shaped), etc., and the present disclosure is not limited to this.

[0109] In an exemplary embodiment, the first refractive index n51 of the first light processing structure 51 may be greater than the second refractive index n52 of the cover layer 52. According to the law of refraction n51*Sinθi1=n52*Sinθo1, it can be seen that the first incident angle θi1 of the light incident on the cover layer 52 is less than the first refractive angle θo1 of the light entering the cover layer 52, that is, relative to the incident light, the light from the red quantum dot layer may be deflected toward the center of the red quantum dot layer after entering the cover layer 52, and the light from the green quantum dot layer may be deflected toward the center of the green quantum dot layer after entering the cover layer 52. The greater the difference between the first refractive index n51 and the second refractive index n52, the greater the degree to which the light entering the cover layer 52 is deflected toward the center of the red quantum dot layer or the center of the green quantum dot layer.

[0110] In an exemplary embodiment, the first refractive index n51 of the first light management structure 51 may be set to be greater than or equal to 1.75 and less than or equal to 1.85. Figure 4b FIG. 1 is a schematic diagram of the dimensions of the first light processing structure in an exemplary embodiment of the present disclosure. Figure 4a and Figure 4b As shown, in a plane perpendicular to the substrate, the cross-sectional shape of the first light processing structure 51 can be a trapezoid, the length of the upper base of the trapezoid is G1, the length of the lower base is E1, and the height is F1. The geometric dimension relationship of the trapezoid can be 0.65<(F1 / ((E1-G1) / 2))<0.99, where the unit of the number is micrometer. In an exemplary embodiment, in a plane perpendicular to the substrate, the cross-sectional length of the quantum dot layer 32 can be expressed as D, the cross-sectional length of the red quantum dot layer is Dr, and the cross-sectional length of the green quantum dot layer is Dg. Figure 4a As shown, the upper base length G1 of the first light processing structure 51 can be set to be greater than or equal to the cross-sectional length D of the corresponding quantum dot layer 32, which can ensure that the light of the red quantum dot layer or the green quantum dot layer is more incident on the first light processing structure 51, so that the light emitted by the light conversion layer is more concentrated, and the attenuation degree of the brightness of the red light and the green light with the change of angle is increased, and it helps to improve the overall light output efficiency. In other embodiments, the upper base length G1 of the first light processing structure 51 can be set to be less than the cross-sectional length D of the corresponding quantum dot layer 32, which helps to better regulate the relationship between brightness attenuation and angle to reduce the color deviation of white light. In practical applications, the relationship between the upper base length of the first light processing structure 51 and the corresponding cross-sectional length Dr of the red quantum dot layer, and the relationship between the upper base length of the first light processing structure 51 and the corresponding cross-sectional length Dg of the green quantum dot layer can be set as needed, and the present disclosure does not limit this.

[0111] In an exemplary embodiment, the second refractive index of the cover layer 52 may be set to be greater than or equal to 1.4 and less than or equal to 1.55. On a plane perpendicular to the substrate, the thickness of the cover layer 52 is H, and the thickness H may be the distance between the surface of the cover layer 52 on the side away from the substrate 10 and the surface of the cover layer 52 on the side close to the substrate 10. The thickness of the cover layer 52 may be set according to the height F1 of the first light processing structure 51, and the present disclosure is not limited thereto.

[0112] In an exemplary embodiment, the sidewall of the first light processing structure 51 may be a fold line, an arc line, a wavy line, etc., which is not limited in the present disclosure.

[0113] Figure 5 is a cross-sectional schematic diagram showing a substrate in another exemplary embodiment of the present disclosure, Figure 3 The cross-sectional view along the AA direction shows the structure of three sub-pixels. Figure 5 The structure layer 20, the light conversion layer 30 and the light processing layer 50 can be seen in Figure 4a The description of is not repeated here. Figure 5As shown, in an exemplary embodiment, a flat layer 40 may be disposed between the display structure layer 20 and the light processing layer 50. The flat layer 40 may cover the first black matrix 31 and the plurality of quantum dot layers 32. The surface of the flat layer 40 away from the substrate 10 may be a flattened surface. In an exemplary embodiment, the material of the flat layer 40 may be an optical glue or an inorganic material, which is not limited in the present disclosure.

[0114] In an exemplary embodiment, Figure 5 As shown, a color filter layer 60 may be disposed on the side of the light processing layer 50 away from the substrate 10. The color filter layer 60 may include at least a plurality of second black matrices 61 and a plurality of filter layers 62. The plurality of second black matrices 61 and the plurality of filter layers 62 may be disposed on the side of the light processing layer 50 away from the substrate 10, the plurality of second black matrices 61 may be disposed at intervals, and light-transmitting openings may be formed between adjacent second black matrices 61, the plurality of filter layers 62 may be disposed at intervals, and are respectively disposed in the plurality of light-transmitting openings, forming a filter layer array separated by the second black matrices 61, and the second black matrices 61 are located between adjacent filter layers 62.

[0115] In an exemplary embodiment, the plurality of filter layers 62 may include a red filter layer that transmits red light, a blue filter layer that transmits blue light, and a green filter layer that transmits green light. The red filter layer may be located in the region where the red sub-pixel (third sub-pixel P3) is located, the green filter layer may be located in the region where the green sub-pixel (second sub-pixel P2) is located, and the blue filter layer may be located in the region where the blue sub-pixel (first sub-pixel P1) is located.

[0116] In an exemplary embodiment, Figure 5 As shown, a module layer 70 may be disposed on a side of the color filter layer 60 away from the substrate 10 .

[0117] The display substrate provided by the exemplary embodiment of the present disclosure is provided with a light processing layer 50 including a first light processing structure 51 and a cover layer 52 on the side of the light conversion layer 30 away from the substrate 10. The first light processing structure 51 is provided corresponding to the red quantum dot layer and the green quantum dot layer, and the first refractive index n51 of the first light processing structure 51 is greater than the second refractive index n52 of the cover layer 52. By using refraction, the emitted light is deflected toward the center of the red quantum dot layer or the center of the green quantum dot layer, respectively, which can effectively improve the light output efficiency of the sub-pixel, improve the light output color range, reduce the color deviation of white light, and improve the display quality. In addition, Figure 4a or Figure 5 The display substrate of the structure shown has a simple manufacturing process and lower production cost. The thickness of the cover layer 52 can be set to a smaller value, which is conducive to realizing a flexible bendable display.

[0118] Figure 6is a cross-sectional schematic diagram showing a substrate in another exemplary embodiment of the present disclosure, Figure 3 The cross-sectional view along the AA direction shown in FIG. 1 illustrates the structure of three sub-pixels. Figure 6 As shown, on a plane perpendicular to the display substrate, the display substrate provided by the embodiment of the present disclosure may include a display structure layer 20 arranged on a substrate 10, a light conversion layer 30 arranged on a side of the display structure layer 20 away from the substrate 10, and a light processing layer 50 arranged on a side of the light conversion layer 30 away from the substrate 10.

[0119] In the exemplary embodiment, the structures of the structure layer 20, the light conversion layer 30 and the light management layer 50 are shown in the exemplary embodiment. Figure 4a The structures of the illustrated embodiments are substantially the same, except that the first light processing structure 51 disposed on the red quantum dot layer and the first light processing structure 51 disposed on the green quantum dot layer are interconnected integral structures.

[0120] In an exemplary embodiment, a plurality of first light processing structures 51 may be disposed on a side of the red quantum dot layer and the green quantum dot layer away from the substrate 10 , and the positions of the first light processing structures 51 may be disposed corresponding to the positions of the red quantum dot layer and the green quantum dot layer.

[0121] In an exemplary embodiment, the orthographic projection of the first light management structure 51 on the substrate 10 at least partially overlaps with the orthographic projections of the corresponding red quantum dot layer and green quantum dot layer on the substrate 10 .

[0122] In an exemplary embodiment, the orthographic projection of the first light management structure 51 on the substrate 10 may include the orthographic projections of the corresponding red quantum dot layer and green quantum dot layer on the substrate 10 .

[0123] In an exemplary embodiment, the orthographic projection of the first light processing structure 51 on the substrate 10 may substantially coincide with the orthographic projection of the corresponding red quantum dot layer, the green quantum dot layer and the first black matrix located between the red quantum dot layer and the green quantum dot layer on the substrate 10 .

[0124] In an exemplary embodiment, the light emitted by the red quantum dot layer and the green quantum dot layer is deflected toward the center of the red quantum dot layer and the center of the green quantum dot layer respectively after passing through the first light processing structure 51, which can improve the light extraction efficiency of the sub-pixel and increase the attenuation degree of the brightness of the light of the light conversion layer with the angle change. In an exemplary embodiment, the center of the red quantum dot layer can be the geometric center of the red quantum dot layer, and the center of the green quantum dot layer can be the geometric center of the green quantum dot layer. In an exemplary embodiment, the shape of the first light processing structure 51 can be set according to the actual pixel morphology or process requirements. In a plane parallel to the substrate, the shape of the first light processing structure 51 can be any one or more of the following: triangle, rectangle, pentagon, hexagon, circle and ellipse. In a plane perpendicular to the substrate, the cross-sectional shape of the first light processing structure 51 can include a trapezoid, an inverted trapezoid or a mushroom (T-shaped), etc., and the present disclosure is not limited to this.

[0125] In an exemplary embodiment, the first refractive index n51 of the first light management structure 51 may be greater than the second refractive index n52 of the cover layer 52. Figure 6 The arrow in the middle shows the deflection of the light emitted by the light conversion layer after passing through the first light processing structure 51. For principle analysis, please refer to Figure 4a The description will not be repeated here.

[0126] In an exemplary embodiment, the first refractive index n51 of the first light processing structure 51 may be greater than or equal to 1.75 and less than or equal to 1.85. In a plane perpendicular to the substrate, the cross-sectional shape of the first light processing structure 51 may be a trapezoid, the length of the upper base of the trapezoid is G1, the length of the lower base is E1, and the height is F1. The geometric dimension relationship of the trapezoid may be 0.65<(F1 / ((E1-G1) / 2))<0.99. In practical applications, the shape and size of the first light processing structure 51 may be set as needed, and the present disclosure does not limit this.

[0127] In an exemplary embodiment, Figure 6 The display substrate of the structure shown in the figure may also be provided with a flat layer 40, a color filter layer 60 and a module layer 70, which can be seen in FIG. Figure 5 The relevant description will not be repeated here.

[0128] The display substrate provided by the exemplary embodiment of the present disclosure has a light processing layer 50 including a first light processing structure 51 and a cover layer 52 arranged on the side of the light conversion layer 30 away from the substrate 10. The first light processing structure 51 arranged on the red quantum dot layer and the first light processing structure 51 arranged on the green quantum dot layer are interconnected integral structures, and the first refractive index n51 of the first light processing structure 51 is greater than the second refractive index n52 of the cover layer 52. Refraction is used to deflect the emitted light toward the center of the red quantum dot layer or the center of the green quantum dot layer, respectively, which can effectively improve the light output efficiency of the sub-pixel, improve the light output color gamut, reduce the color deviation of white light, and improve the display quality. In addition, Figure 6 The display substrate of the structure shown simplifies the preparation process of the first light processing structure 51, which helps to improve the production yield and reduce the production cost. Figure 4a or Figure 5 In the structure, the light emitting paths of the red quantum dot layer and the green quantum dot layer are reduced by a trapezoidal slope, which can more flexibly adjust the relationship between brightness attenuation and angle change. The thickness H of the cover layer 52 can be set to a smaller value, which is conducive to realizing flexible bending display.

[0129] Figure 7a is a cross-sectional schematic diagram showing a substrate in another exemplary embodiment of the present disclosure, Figure 3 The cross-sectional view along the AA direction shown in FIG. 1 illustrates the structure of three sub-pixels. Figure 7a As shown, on a plane perpendicular to the display substrate, the display substrate provided by the embodiment of the present disclosure may include a display structure layer 20 arranged on a substrate 10, a light conversion layer 30 arranged on a side of the display structure layer 20 away from the substrate 10, and a light processing layer 50 arranged on a side of the light conversion layer 30 away from the substrate 10.

[0130] In the exemplary embodiment, the structure layer 20, the light conversion layer 30 and the Figure 4a The structures of the illustrated embodiments are substantially the same, except that the light management layer 50 further includes a second light management structure 53 .

[0131] In an exemplary embodiment, Figure 7aAs shown, the light processing layer 50 may include a plurality of second light processing structures 53 disposed on the side of the light conversion layer 30 away from the substrate 10, a plurality of first light processing structures 51 disposed on the side of the second light processing structures 53 away from the substrate 10, and a covering layer 52 disposed on the side of the first light processing structures 51 away from the substrate 10. The positions of the plurality of second light processing structures 53 may be arranged in a one-to-one correspondence with the positions of the plurality of first black matrices 31. The positions of the plurality of first light processing structures 51 may correspond to the positions of the plurality of red quantum dot layers and the green quantum dot layers. The covering layer 52 may be disposed on the side of the plurality of first light processing structures 51 away from the substrate 10, and the covering layer 52 may cover the plurality of first light processing structures 51 and the plurality of second light processing structures 53.

[0132] In an exemplary embodiment, a surface of the cover layer 52 on a side away from the substrate 10 may be a planarized surface.

[0133] In an exemplary embodiment, an orthographic projection of the second light management structure 53 on the substrate 10 may overlap with an orthographic projection of the corresponding first black matrix 31 on the substrate 10 .

[0134] In an exemplary embodiment, the orthographic projection of the second light management structure 53 on the substrate 10 may include the orthographic projection of the corresponding first black matrix 31 on the substrate 10 .

[0135] In an exemplary embodiment, the orthographic projection of second light processing structure 53 on substrate 10 at least partially overlaps with the orthographic projection of the red quantum dot layer on substrate 10 , and the orthographic projection of second light processing structure 53 on substrate 10 at least partially overlaps with the orthographic projection of the green quantum dot layer on substrate 10 .

[0136] In an exemplary embodiment, the orthographic projection of second light management structure 53 on substrate 10 does not overlap with the orthographic projection of light-transmitting layer on substrate 10 .

[0137] In an exemplary embodiment, the orthographic projection of the first light processing structure 51 on the substrate 10 at least partially overlaps with the orthographic projection of the corresponding red quantum dot layer on the substrate 10, and the orthographic projection of the first light processing structure 51 on the substrate 10 at least partially overlaps with the orthographic projection of the corresponding green quantum dot layer on the substrate 10.

[0138] In an exemplary embodiment, the orthographic projection of the first light processing structure 51 on the substrate 10 may include the orthographic projection of the corresponding red quantum dot layer on the substrate 10 , and the orthographic projection of the first light processing structure 51 on the substrate 10 may include the orthographic projection of the corresponding green quantum dot layer on the substrate 10 .

[0139] In an exemplary embodiment, the orthographic projection of the first light processing structure 51 on the substrate 10 may substantially coincide with the orthographic projection of the corresponding red quantum dot layer on the substrate 10 , and the orthographic projection of the first light processing structure 51 on the substrate 10 may substantially coincide with the orthographic projection of the corresponding green quantum dot layer on the substrate 10 .

[0140] In an exemplary embodiment, an orthographic projection of the first light management structure 51 on the substrate 10 may overlap with an orthographic projection of the first black matrix 31 on the substrate 10 .

[0141] In an exemplary embodiment, the light emitted by the red quantum dot layer and the green quantum dot layer are deflected toward the center of the red quantum dot layer and the center of the green quantum dot layer respectively after passing through the first light processing structure 51, which can improve the light extraction efficiency of the sub-pixel. In an exemplary embodiment, the center of the red quantum dot layer may be the geometric center of the red quantum dot layer, and the center of the green quantum dot layer may be the geometric center of the green quantum dot layer. In an exemplary embodiment, the shape of the first light processing structure 51 may be set according to the actual pixel morphology or process requirements. On a plane parallel to the display substrate, the shape of the first light processing structure 51 may be any one or more of the following: triangle, rectangle, pentagon, hexagon, circle and ellipse. In a plane perpendicular to the substrate, the cross-sectional shape of the first light processing structure 51 may include a trapezoid, an inverted trapezoid or a mushroom (T-shaped), etc., and the present disclosure is not limited to this. Figure 7a FIG. 5 shows a case where light is emitted directly from the first light processing structure 51. Figure 4a The description in will not be repeated here.

[0142] In an exemplary embodiment, the first refractive index n51 of the first light management structure 51 may be set to be greater than or equal to 1.75 and less than or equal to 1.85. Figure 7bSchematic diagram of the dimensions of the second light processing structure in an exemplary embodiment of the present disclosure. In a plane perpendicular to the substrate, the cross-sectional shape of the first light processing structure 51 can be a trapezoid, the length of the upper base of the trapezoid is G1, the length of the lower base is E1, and the height is F1. The geometric dimension relationship of the trapezoid can be 0.76<(F1 / ((E1-G1) / 2))<0.984, where the unit of the number is micrometer. In an exemplary embodiment, in a plane perpendicular to the substrate, the cross-sectional length of the quantum dot layer 32 can be expressed as D, the cross-sectional length of the red quantum dot layer is Dr, and the cross-sectional length of the green quantum dot layer is Dg. The upper base length G1 of the first light processing structure 51 can be set to be greater than or equal to the cross-sectional length D of the corresponding quantum dot layer 32, which can ensure that the light of the red quantum dot layer or the green quantum dot layer is more incident on the first light processing structure 51, so that the light emitted by the light conversion layer is more concentrated, and the attenuation degree of the brightness of the red light and the green light with the angle is increased, and it helps to improve the overall light output efficiency; in other embodiments, the upper base length G1 of the first light processing structure 51 can be set to be less than the cross-sectional length D of the corresponding quantum dot layer 32, which helps to better regulate the relationship between brightness attenuation and angle, so as to reduce the color deviation of white light. In practical applications, the relationship between the upper base length of the first light processing structure 51 and the corresponding cross-sectional length Dr of the red quantum dot layer or the cross-sectional length Dg of the green quantum dot layer can be set as needed, and the present disclosure does not limit this.

[0143] In an exemplary embodiment, the first refractive index n51 of the first light management structure 51 may be greater than the third refractive index n53 of the second light management structure 53, and the second incident angle θi2>total reflection critical angle β, total reflection critical angle β=arcsin(n53 / n51).

[0144] In an exemplary embodiment, the light is incident on the interface between the first light processing structure 51 and the second light processing structure 53 at the second incident angle θi2. Since the second incident angle θi2 is greater than the critical angle β of total reflection, the incident light is totally reflected and re-enters the first light processing structure 51 at the second reflection angle θo2. The light re-entering the first light processing structure 51 is deflected toward the center of the sub-pixel, and the second incident angle θi2 = the second reflection angle θo2.

[0145] In an exemplary embodiment, the third refractive index n53 of the second light management structure 53 may be set to be greater than or equal to 1.42 and less than or equal to 1.53. Figure 7a and Figure 7bAs shown, in a plane perpendicular to the substrate, the cross-sectional shape of the second light processing structure 53 may be a trapezoid, the length of the upper base of the trapezoid is G2, the length of the lower base is E2, and the height is F2. The geometric dimension relationship of the trapezoid may be 0.766<(F2 / ((E2-G2) / 2))<0.939. In an exemplary embodiment, when the orthographic projection of the second light processing structure 53 on the substrate 10 overlaps with the orthographic projection of the red quantum dot layer on the substrate 10, and when the orthographic projection of the second light processing structure 53 on the substrate 10 overlaps with the orthographic projection of the green quantum dot layer on the substrate 10, the larger the overlapping area between the projections, the faster the brightness decays with angle. In an exemplary embodiment, when the orthographic projection of the second light processing structure 53 on the substrate 10 does not overlap with the orthographic projection of the red quantum dot layer on the substrate 10, and when the orthographic projection of the second light processing structure 53 on the substrate 10 does not overlap with the orthographic projection of the green quantum dot layer on the substrate 10, the farther the distance between adjacent boundaries between the projections, the slower the brightness decays with angle. In practical applications, the positional relationship between the orthographic projection of the second light processing structure 53 on the substrate 10 and the orthographic projection of the red quantum dot layer or the green quantum dot layer on the substrate 10 can be set as needed, and the present disclosure does not limit this.

[0146] In an exemplary embodiment, the light processing structure may only include the second light processing structure 53 , and the light from the red quantum dot layer and the green quantum dot layer can be deflected toward their respective centers under the reflection of the second light processing structure 53 , thereby improving the light extraction efficiency.

[0147] In an exemplary embodiment, the second refractive index of the cover layer 52 may be set to be greater than or equal to 1.4 and less than or equal to 1.55. The thickness H of the cover layer 52 may satisfy F1+F2+1<H<F1+F2+1.5, where the unit of the numbers is micrometer.

[0148] In an exemplary embodiment, Figure 7a The display substrate of the structure shown in the figure may also be provided with a flat layer 40, a color filter layer 60 and a module layer 70, which can be seen in FIG. Figure 5 The relevant description will not be repeated here.

[0149] The display substrate provided by the exemplary embodiment of the present disclosure is provided with a light processing layer 50 including a second light processing structure 53, a first light processing structure 51 and a covering layer 52 on the side of the light conversion layer 30 away from the substrate 10, the second light processing structure 53 is provided corresponding to the first black matrix 31, the first light processing structure 51 is provided corresponding to the red quantum dot layer and the green quantum dot layer, the first refractive index n51 of the first light processing structure 51 is greater than the second refractive index n52 of the covering layer 52, and the first refractive index n51 of the first light processing structure 51 is greater than the third refractive index n53 of the second light processing structure 53. Refraction and total reflection are used to deflect the emitted light toward the center of the red quantum dot layer or the center of the green quantum dot layer, so as to effectively improve the light output efficiency of the sub-pixel, improve the light output color gamut, reduce the color deviation of white light, and improve the display quality.

[0150] Figure 8 is a cross-sectional schematic diagram showing a substrate in another exemplary embodiment of the present disclosure, Figure 3 The cross-sectional view along the AA direction shown in FIG. 1 illustrates the structure of three sub-pixels. Figure 8 As shown, on a plane perpendicular to the display substrate, the display substrate provided by the embodiment of the present disclosure may include a display structure layer 20 arranged on a substrate 10, a light conversion layer 30 arranged on a side of the display structure layer 20 away from the substrate 10, and a light processing layer 50 arranged on a side of the light conversion layer 30 away from the substrate 10.

[0151] In the exemplary embodiment, the structures of the structure layer 20, the light conversion layer 30 and the light management layer 50 are shown in the exemplary embodiment. Figure 7a The structures of the illustrated embodiments are substantially the same, except that the first light processing structure 51 disposed on the red quantum dot layer and the first light processing structure 51 disposed on the green quantum dot layer are interconnected integral structures.

[0152] In an exemplary embodiment, a plurality of first light processing structures 51 may be disposed on a side of the red quantum dot layer and the green quantum dot layer away from the substrate 10 , and the positions of the first light processing structures 51 may be disposed corresponding to the positions of the red quantum dot layer and the green quantum dot layer.

[0153] In an exemplary embodiment, the orthographic projection of the first light processing structure 51 on the substrate 10 at least partially overlaps with the orthographic projection of the corresponding red quantum dot layer on the substrate 10, and the orthographic projection of the first light processing structure 51 on the substrate 10 at least partially overlaps with the orthographic projection of the corresponding green quantum dot layer on the substrate 10.

[0154] In an exemplary embodiment, the orthographic projection of the first light processing structure 51 on the substrate 10 may include the orthographic projection of the corresponding red quantum dot layer on the substrate 10 , and the orthographic projection of the first light processing structure 51 on the substrate 10 may include the orthographic projection of the corresponding green quantum dot layer on the substrate 10 .

[0155] In an exemplary embodiment, the orthographic projection of the first light processing structure 51 on the substrate 10 may substantially coincide with the orthographic projection of the corresponding red quantum dot layer, the green quantum dot layer and the first black matrix located between the red quantum dot layer and the green quantum dot layer on the substrate 10 .

[0156] In an exemplary embodiment, the light emitted by the red quantum dot layer and the green quantum dot layer is deflected toward the center of the red quantum dot layer and the center of the green quantum dot layer respectively after passing through the first light processing structure 51, which can improve the light extraction efficiency of the sub-pixel and increase the attenuation rate of the brightness of the light in the light conversion layer as the angle changes. In an exemplary embodiment, the center of the red quantum dot layer can be the geometric center of the red quantum dot layer, and the center of the green quantum dot layer can be the geometric center of the green quantum dot layer. In an exemplary embodiment, the shape of the first light processing structure 51 can be set according to the actual pixel morphology or process requirements. In a plane parallel to the substrate, the shape of the first light processing structure 51 can be any one or more of the following: triangle, rectangle, pentagon, hexagon, circle and ellipse. In a plane perpendicular to the substrate, the cross-sectional shape of the first light processing structure 51 can include a trapezoid, an inverted trapezoid or a mushroom (T-shaped), etc., and the present disclosure is not limited to this.

[0157] In an exemplary embodiment, the first refractive index n51 of the first light management structure 51 may be greater than the second refractive index n52 of the cover layer 52. Figure 8 The arrow in the middle shows the deflection of the light emitted by the light conversion layer after passing through the first light processing structure 51. For principle analysis, please refer to Figure 4a The description will not be repeated here.

[0158] In an exemplary embodiment, the first refractive index n51 of the first light processing structure 51 is greater than or equal to 1.75 and less than or equal to 1.85. In a plane perpendicular to the substrate, the cross-sectional shape of the first light processing structure 51 may be a trapezoid, the length of the upper base of the trapezoid is G1, the length of the lower base is E1, and the height is F1. The geometric dimension relationship of the trapezoid may be 0.76<(F1 / ((E1-G1) / 2))<0.984. In practical applications, the shape and size of the first light processing structure 51 may be set as needed, and the present disclosure does not limit this.

[0159] In an exemplary embodiment, Figure 8The display substrate of the structure shown in the figure may also be provided with a flat layer 40, a color filter layer 60 and a module layer 70, which can be seen in FIG. Figure 5 The relevant description will not be repeated here.

[0160] The display substrate provided by the exemplary embodiment of the present disclosure is provided with a light processing layer 50 including a second light processing structure 53, a first light processing structure 51 and a covering layer 52 on the side of the light conversion layer 30 away from the substrate 10, the second light processing structure 53 is provided corresponding to the first black matrix 31, the first light processing structure 51 is provided corresponding to the red quantum dot layer and the green quantum dot layer, the first refractive index n51 of the first light processing structure 51 is greater than the second refractive index n52 of the covering layer 52, and the first refractive index n51 of the first light processing structure 51 is greater than the third refractive index n53 of the second light processing structure 53. Refraction and total reflection are used to deflect the outgoing light toward the center of the red quantum dot layer or the center of the green quantum dot layer, which can effectively improve the light output efficiency of the sub-pixel, improve the light output color gamut, reduce the color deviation of white light, and improve the display quality. In addition, Figure 8 The display substrate of the structure shown simplifies the preparation process of the first light processing structure 51, which helps to improve the production yield and reduce the production cost. Figure 7a In the structure, the light output paths of the red quantum dot layer and the green quantum dot layer are reduced by a trapezoidal slope respectively, which can more flexibly adjust the relationship between brightness attenuation and angle change.

[0161] Figure 9a is a cross-sectional schematic diagram showing a substrate in another exemplary embodiment of the present disclosure, Figure 3 The cross-sectional view along the AA direction shown in FIG. 1 illustrates the structure of three sub-pixels. Figure 9a As shown, on a plane perpendicular to the display substrate, the display substrate provided by the embodiment of the present disclosure may include a display structure layer 20 arranged on a substrate 10, a light conversion layer 30 arranged on a side of the display structure layer 20 away from the substrate 10, and a light processing layer 50 arranged on a side of the light conversion layer 30 away from the substrate 10.

[0162] In the exemplary embodiment, the light conversion layer 30, the light management layer 50 and the Figure 7a The structures of the illustrated embodiments are substantially the same, except that the display structure layer 20 includes a third light processing structure.

[0163] In an exemplary embodiment, the display structure layer 20 includes a driving circuit layer 21, a light emitting structure layer located on a side of the driving circuit layer 21 away from the substrate 10, and an encapsulation structure layer located on a side of the light emitting structure layer away from the substrate 10. The driving circuit layer 21 may include a plurality of transistors and storage capacitors constituting a pixel driving circuit. The light emitting structure layer may include a pixel definition layer 22 and a light emitting device 23, the pixel definition layer 22 includes a plurality of pixel openings, the pixel openings form a light emitting area, and a pixel dam is formed between adjacent light emitting areas. The light emitting device 23 may include an anode, an organic light emitting layer, and a cathode. The light emitting device 23 may be a blue light emitting device, and a plurality of light emitting devices 23 may be arranged one by one corresponding to the red quantum dot layer, the green quantum dot layer, and the light-transmitting layer, respectively. Figure 9a The light emitting device 23 is briefly shown in FIG. The encapsulation structure layer may include a first sublayer 24, a second sublayer 25 and a third sublayer 26 stacked together. The first sublayer 24 and the third sublayer 26 may be made of inorganic materials, and the second sublayer 25 may be made of organic materials.

[0164] In an exemplary embodiment, the first sublayer 24 of the encapsulation structure layer may include a plurality of third light processing structures, the plurality of third light processing structures may be disposed on a side of the plurality of light emitting devices 23 away from the substrate 10, and the positions of the plurality of third light processing structures may correspond one to one with the positions of the plurality of light emitting devices 23. The second sublayer 25 may be disposed on a side of the plurality of third light processing structures away from the substrate 10, and the second sublayer 25 may cover the plurality of third light processing structures. The third sublayer 26 may be disposed on a side of the second sublayer 25 away from the substrate 10, and the third sublayer 26 may cover the second sublayer 25.

[0165] In an exemplary embodiment, an orthographic projection of the third light management structure on substrate 10 at least partially overlaps an orthographic projection of a corresponding pixel opening on substrate 10 .

[0166] In an exemplary embodiment, the orthographic projection of the third light management structure on substrate 10 may include the orthographic projection of the corresponding pixel opening on substrate 10 .

[0167] In an exemplary embodiment, the light emitted by the light emitting device 23 can be deflected toward the center of the pixel opening after passing through the third light processing structure, so that more light can be irradiated to the red quantum dot layer or the green quantum dot layer, which helps to better excite the quantum dot material to produce light of the corresponding color, and can also make the blue light passing through the light-transmitting layer more concentrated, thereby improving the light extraction efficiency. In an exemplary embodiment, the center of the pixel opening can be the geometric center of the pixel opening. In an exemplary embodiment, the shape of the third light processing structure can be set according to the actual pixel morphology or process requirements. In a plane parallel to the substrate, the shape of the third light processing structure can be any one or more of the following: triangle, rectangle, pentagon, hexagon, circle and ellipse. In a plane perpendicular to the substrate, the cross-sectional shape of the third light processing structure can include a trapezoid, an inverted trapezoid or a mushroom (T-shaped), etc., and the present disclosure does not limit this.

[0168] In an exemplary embodiment, the fourth refractive index of the third light processing structure may be greater than the fifth refractive index of the second sub-layer 25, and the refraction angle of the light when incident from the third light processing structure to the second sub-layer 25 is smaller than the incident angle, so that relative to the incident light, the light entering the second sub-layer 25 is deflected toward the center of the pixel opening, such as Figure 9a The greater the difference between the fourth refractive index of the third light processing structure and the fifth refractive index of the second sub-layer 25, the greater the degree to which the light entering the second sub-layer 25 is deflected toward the center of the pixel opening.

[0169] In an exemplary embodiment, the fourth refractive index of the third light management structure may be set to be greater than or equal to 1.7 and less than or equal to 1.8. Figure 9b FIG. 1 is a schematic diagram of the dimensions of the third light processing structure in an exemplary embodiment of the present disclosure. Figure 9a and Figure 9b As shown, in a plane perpendicular to the substrate, the cross-sectional shape of the third light processing structure may be a trapezoid, the length of the upper base of the trapezoid is G3, the length of the lower base is E3, the height is F3, and the geometric dimension relationship of the trapezoid may be 0.75<(F3 / ((E3-G3) / 2))<0.9.

[0170] In an exemplary embodiment, the first refractive index n51 of the first light processing structure 51 is greater than or equal to 1.75 and less than or equal to 1.85. In a plane perpendicular to the substrate, the cross-sectional shape of the first light processing structure 51 may be a trapezoid, the length of the upper base of the trapezoid is G1, the length of the lower base is E1, and the height is F1. The geometric dimension relationship of the trapezoid may be 0.76<(F1 / ((E1-G1) / 2))<0.984. In practical applications, the shape and size of the first light processing structure 51 may be set as needed, and the present disclosure does not limit this.

[0171] In an exemplary embodiment, the third refractive index n53 of the second light processing structure 53 can be set to be greater than or equal to 1.42 and less than or equal to 1.53. In a plane perpendicular to the substrate, the cross-sectional shape of the second light processing structure 53 can be a trapezoid, the length of the upper base of the trapezoid is G2, the length of the lower base is E2, and the height is F2. The geometric dimension relationship of the trapezoid can be 0.766<(F2 / ((E2-G2) / 2))<0.939. In an exemplary embodiment, when the orthographic projection of the second light processing structure 53 on the substrate 10 overlaps with the orthographic projection of the red quantum dot layer on the substrate 10, and when the orthographic projection of the second light processing structure 53 on the substrate 10 overlaps with the orthographic projection of the green quantum dot layer on the substrate 10, the larger the overlapping area between the projections, the faster the brightness decay rate with angle changes. In an exemplary embodiment, when the orthographic projection of the second light processing structure 53 on the substrate 10 does not overlap with the orthographic projection of the red quantum dot layer on the substrate 10, and the orthographic projection of the second light processing structure 53 on the substrate 10 does not overlap with the orthographic projection of the green quantum dot layer on the substrate 10, the farther the distance between adjacent boundaries between the projections, the slower the brightness decay rate with angle change. In practical applications, the positional relationship between the orthographic projection of the second light processing structure 53 on the substrate 10 and the orthographic projection of the red quantum dot layer or the green quantum dot layer on the substrate 10 can be set as needed, and the present disclosure is not limited to this.

[0172] In an exemplary embodiment, the second refractive index of the cover layer 52 may be set to be greater than or equal to 1.4 and less than or equal to 1.55. The thickness H of the cover layer 52 may satisfy F1+F2+1<H<F1+F2+1.5, where the unit of the numbers is micrometer.

[0173] Fig.10 FIG. 4 is a schematic diagram of the dimensions of a pixel definition layer in an exemplary embodiment of the present disclosure. Fig.11 FIG. 1 is a top view of a pixel opening and a red quantum dot layer in an exemplary embodiment of the present disclosure. Fig.10As shown, the pixel definition layer 22 includes a plurality of pixel openings, the pixel openings form a light-emitting area, and the pixel dams are between adjacent light-emitting areas. On a plane perpendicular to the substrate, the cross-sectional shape of the pixel dam may be a trapezoid, the bottom length of the pixel dam is A, the length of the positive projection of the trapezoidal slope of the pixel dam on the substrate is B, and the length of the pixel opening between adjacent pixel dams is C, that is, the length of the positive projection of the pixel dam on the substrate is A. In an exemplary embodiment, the length B of the positive projection of the trapezoidal slope of the pixel dam on the substrate may be less than or equal to 8 microns, and in other embodiments, the length B of the positive projection of the trapezoidal slope of the pixel dam on the substrate may be less than or equal to 5 microns. In an exemplary embodiment, the positive projection of the third light processing structure on the substrate may include the positive projection of the pixel opening on the substrate, and the size relationship between the third light processing structure and the pixel opening satisfies: C≤G3<E3<C+8, where the unit of the number is micron, which can enable more light to enter the corresponding quantum dot layer. In an exemplary embodiment, in a plane perpendicular to the substrate, the cross-sectional length of the quantum dot layer 32 can be expressed as D, the cross-sectional length of the red quantum dot layer is Dr, the cross-sectional length of the green quantum dot layer is Dg, and the cross-sectional length of the first black matrix 31 between adjacent red quantum dot layers and green quantum dot layers is Db. In an exemplary embodiment, Dr / 2+Dg / 2+Db≤A can be set to ensure that as much light as possible emitted from the slope of the third light processing structure is incident on the corresponding red quantum dot layer or green quantum dot layer. Taking the red quantum dot layer as an example, Fig.11 As shown, the cross-sectional length of the red quantum dot layer is Dr, and the pixel opening length is C, and the relationship between the two can be C<Dr<16+C, where the unit of the number is micrometer, and the distance between the adjacent sides of the orthographic projection of the quantum dot layer 32 on the substrate 10 and the orthographic projection of the corresponding pixel opening on the substrate 10 is less than or equal to 8 micrometers. The relationship between the green quantum dot layer and the light-transmitting layer and the pixel opening length C can be the same as that of the red quantum dot layer.

[0174] In an exemplary embodiment, Fig.11 As shown, the distance a between the orthographic projection of the red quantum dot layer on the substrate 10 and the adjacent side of the orthographic projection of the corresponding pixel opening on the substrate 10 may be greater than or equal to 5.5 microns and less than or equal to 9 microns, and the relationship between the green quantum dot layer and the light-transmitting layer and the pixel opening length may be the same as that of the red quantum dot layer. In an exemplary embodiment, the orthographic projection of the second light processing structure 53 on the substrate 10 and the orthographic projection of the pixel opening on the substrate 10 may not overlap, and the distance between the orthographic projection of the second light processing structure 53 on the substrate 10 and the adjacent side of the orthographic projection of the pixel opening on the substrate 10 may be set to be greater than or equal to 4 microns and less than or equal to 6 microns.

[0175] In an exemplary embodiment, taking the red quantum dot layer as an example, the size relationship between the first light processing structure 51 and the red quantum dot layer also satisfies: Dr<G1<E1<A+C. The relationship between the green quantum dot layer and the light-transmitting layer and the pixel opening length can be the same as that of the red quantum dot layer.

[0176] In an exemplary embodiment, Figure 9a The display substrate of the structure shown in the figure may also be provided with a flat layer 40, a color filter layer 60 and a module layer 70, which can be seen in FIG. Figure 5 The relevant description will not be repeated here.

[0177] The display substrate provided by the exemplary embodiment of the present disclosure can effectively improve the light extraction efficiency of the sub-pixel by setting a third light processing structure corresponding to the pixel opening on the display structure layer 20, and using refraction to deflect the outgoing light toward the center of the pixel opening. A light processing layer 50 including a second light processing structure 53, a first light processing structure 51 and a cover layer 52 is set on the side of the light conversion layer 30 away from the substrate 10, the second light processing structure 53 is set corresponding to the first black matrix 31, the first light processing structure 51 is set corresponding to the red quantum dot layer and the green quantum dot layer, the first refractive index n51 of the first light processing structure 51 is greater than the second refractive index n52 of the cover layer 52, and the first refractive index n51 of the first light processing structure 51 is greater than the third refractive index n53 of the second light processing structure 53. Refraction and total reflection are used to deflect the outgoing light toward the center of the red quantum dot layer or the center of the green quantum dot layer, which can effectively improve the light extraction efficiency of the sub-pixel, improve the light extraction color range, reduce the color deviation of white light, and improve the display quality. The third light processing structure, the second light processing structure 53, the first light processing structure 51, the light emitting device and the light conversion layer are arranged in coordination with each other in terms of position and size, which further improves the display quality.

[0178] In an exemplary embodiment, Figure 9a The display structure layer 20 of the structure shown can also be applied to the structures shown in other embodiments.

[0179] In an exemplary embodiment, Figure 4a The display substrate shown can be used Figure 9a The structure shown in the figure shows a structure layer 20, Figure 4a The display structure layer 20 may be provided with a third light processing structure. In this case, the size of the first light processing structure 51 may satisfy: G1<E1<A+C. The size relationship between G1 and D may be set as required.

[0180] In an exemplary embodiment, Figure 8 The display substrate shown can be used Figure 9a The structure shown in the figure shows a structure layer 20, Figure 8The display structure layer 20 may be provided with a third light processing structure. In this case, the size of the first light processing structure 51 may satisfy: 2C+A<G1<E1<2A+2C. The size relationship between G1 and D may be set as required.

[0181] The effect of adjusting the relationship between brightness attenuation and angle in the embodiment of the present disclosure is described below through a brightness and angle relationship curve.

[0182] Fig.12 The curves showing the relationship between brightness and angle of OLED devices and quantum dot materials of different colors. Fig.13 This is a curve showing the relationship between the brightness and angle of a blue light-emitting device, a light conversion layer, and an ideal state. Fig.12 In the figure, the horizontal axis represents angle, the vertical axis represents intensity, and the three solid lines represent the brightness and angle relationship curves of the green light-emitting device, the red light-emitting device, and the blue light-emitting device from top to bottom, respectively. The two nearly overlapping dotted lines represent the brightness and angle relationship curves of the red quantum dot material and the green quantum dot material, respectively. Fig.12 It can be seen that the curve of quantum dot material is higher than that of light emitting device as a whole, that is, as the angle increases, the brightness attenuation of quantum dot material is smaller than that of light emitting device, and the intensity of the lowest point of the brightness of quantum dot material is still above 0.7, while the intensity of the lowest point of the brightness of light emitting device is below 0.3, and there is a big difference between the two. Therefore, the method of directly using the combination of light emitting device + quantum dot material in the display substrate to produce red, green and blue light will cause the white light to have a larger color deviation and poor display effect. Fig.13 In the figure, two nearly overlapping dotted lines represent the brightness and angle relationship curves of the red quantum dot material and the green quantum dot material, respectively. The solid line in the middle represents the ideal brightness and angle relationship curve. The solid line at the bottom represents the brightness and angle relationship curve of the blue light-emitting device. Fig.13 In the figure, the intensity of the lowest brightness point of the ideal curve is about 0.6, and the direction of the arrows indicates that in order to reach the ideal curve, the brightness and angle relationship curve of the quantum dot material and the brightness and angle relationship curve of the blue light-emitting device need to move closer to the middle, respectively. That is, it is necessary to increase the brightness attenuation of the quantum dot material with angle changes, and reduce the brightness attenuation of the blue light-emitting device with angle changes.

[0183] Fig.14 for Figure 8 (with a third light processing structure) and Figure 9a The embodiment shown shows a curve of the relationship between the brightness and angle of the substrate. Fig.14 The upper curve in the figure represents the curve with the third light processing structure. Figure 8 The brightness and angle relationship curve of the display substrate, Fig.14 The lower curve in the figure represents Figure 9a The brightness and angle relationship curve of the display substrate in the embodiment shown. The intensity of the lowest brightness point of the two curves is about 0.6. It can be seen that the brightness and angle relationship curve of the display substrate in the above embodiment is basically consistent with the ideal brightness and angle relationship curve, which greatly improves the display effect of the display substrate. The display substrates provided in the embodiments of the present disclosure can achieve the effect of the ideal brightness and angle relationship curve. In the case of differences in specific structural settings, the smoothness of the brightness and angle relationship curves of different display substrates is different. Fig.14 As an example, compared with the curve in Figure 9a , Figure 8 The first light processing structure in the embodiment reduces the slope that can change the light path, so it changes with the angle. Figure 8 The brightness of the display substrate decays more slowly.

[0184] Fig.15 This is the white light color deviation curve before and after structural adjustment. Fig.15 As shown, under the chromaticity coordinates of 1931, the white light color deviation curve of the display substrate that directly uses the combination of light-emitting devices + quantum dot materials to generate red, green and blue light is curve 1, while the white light color deviation curve of the display substrate obtained after the structural adjustment of the embodiment of the present disclosure is curve 2. Fig.15 It can be clearly seen that after the structural adjustment of the embodiment of the present disclosure, the white light color deviation problem of the display substrate is greatly improved.

[0185] The embodiments of the present disclosure also provide a display device, including the display substrate described in any of the above embodiments. The display device can be: an OLED display, a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, or any other product or component with a display function, and the embodiments of the present disclosure are not limited thereto.

[0186] The embodiment of the present disclosure also provides a method for preparing a display substrate, the method comprising: forming a display structure layer on a substrate; forming a light conversion layer on a side of the display structure layer away from the substrate, the light conversion layer comprising at least a red quantum dot layer, a green quantum dot layer and a light-transmitting layer; forming a light processing layer on a side of the light conversion layer away from the substrate, the light processing layer comprising a plurality of light processing structures for improving light extraction efficiency and a covering layer arranged on a side of the light processing structure away from the substrate, the orthographic projection of the light processing structure on the substrate at least partially overlaps with the orthographic projection of the red quantum dot layer on the substrate, the orthographic projection of the light processing structure on the substrate at least partially overlaps with the orthographic projection of the green quantum dot layer on the substrate, and the refractive index of the light processing structure is greater than the refractive index of the covering layer.

[0187] The structure of the display substrate of the present disclosure is explained below by an example of the display substrate preparation process. The "patterning process" mentioned in the present disclosure includes processes such as depositing a film layer, coating a photoresist, mask exposure, development, etching and stripping the photoresist. Deposition can be performed by any one or more selected from sputtering, evaporation and chemical vapor deposition, coating can be performed by any one or more selected from spraying and spin coating, and etching can be performed by any one or more selected from dry etching and wet etching. "Thin film" refers to a thin film made by depositing or coating a certain material on a substrate. If the "thin film" does not require a patterning process during the entire production process, the "thin film" can also be called a "layer". When the "thin film" still requires a patterning process during the entire production process, it is called a "thin film" before the patterning process and a "layer" after the patterning process. The "layer" after the patterning process contains at least one "pattern". "A and B are arranged in the same layer" mentioned in the present disclosure means that A and B are formed simultaneously by the same patterning process. “The orthographic projection of A includes the orthographic projection of B” means that the orthographic projection of B falls within the range of the orthographic projection of A, or the orthographic projection of A covers the orthographic projection of B.

[0188] In an exemplary embodiment, a process of preparing a display substrate may include the following steps.

[0189] (1) Forming a driving circuit layer pattern. In an exemplary embodiment, forming a driving circuit layer pattern may include:

[0190] A first insulating film and a semiconductor film are sequentially deposited on the substrate 10, and the semiconductor film is patterned through a patterning process to form a first insulating layer covering the substrate, and a semiconductor layer pattern arranged on the first insulating layer. The semiconductor layer pattern of each sub-pixel may include at least a plurality of active layers.

[0191] Subsequently, a second insulating film and a first conductive film are deposited in sequence, and the first conductive film is patterned through a patterning process to form a second insulating layer covering the semiconductor layer pattern, and a first conductive layer pattern arranged on the second insulating layer. The first conductive layer pattern of each sub-pixel can include at least a plurality of gate electrodes and a first electrode plate.

[0192] Subsequently, a third insulating film and a second conductive film are deposited in sequence, and the second conductive film is patterned through a patterning process to form a third insulating layer covering the first conductive layer, and a second conductive layer pattern arranged on the third insulating layer. The second conductive layer pattern of each sub-pixel may include at least a second electrode plate, and the orthographic projection of the second electrode plate on the substrate at least partially overlaps with the orthographic projection of the first electrode plate on the substrate.

[0193] Subsequently, a fourth insulating film is deposited and patterned by a patterning process to form a fourth insulating layer pattern covering the second conductive layer pattern. Two active vias are formed on the fourth insulating layer of each sub-pixel, and the two active vias expose two ends of the active layer respectively.

[0194] Subsequently, a third conductive film is deposited and patterned by a patterning process to form a third conductive layer pattern on the fourth insulating layer. The third conductive layer pattern includes at least: a source electrode and a drain electrode located in each sub-pixel, and the source electrode and the drain electrode are respectively connected to the active layer through active vias.

[0195] Subsequently, a flat film is coated on the substrate with the aforementioned pattern, and the flat film is patterned through a patterning process to form a flat layer pattern covering the third conductive layer pattern, and at least one connecting via is formed on the flat layer of each sub-pixel, and the connecting via exposes the surface of the drain electrode.

[0196] At this point, the pattern of the driving circuit layer 21 is completed. Fig.16 As shown, Fig.16 for Figure 3 The cross-sectional view taken along the AA direction shows the structure of three sub-pixels. In an exemplary embodiment, the driving circuit layer 20 of each sub-pixel may include a plurality of transistors and storage capacitors constituting a pixel driving circuit. Fig.16 In the figure, the pixel driving circuit is only taken as an example including a transistor 101A and a storage capacitor 101B.

[0197] In an exemplary embodiment, the transistor 101A may include an active layer, a gate electrode, a source electrode, and a drain electrode, and the storage capacitor 101B may include a first electrode plate and a second electrode plate. In an exemplary embodiment, the transistor 101A may be a driving transistor in a pixel driving circuit, and the driving transistor may be a thin film transistor (TFT).

[0198] In an exemplary embodiment, the substrate may be a rigid substrate or a flexible substrate. The rigid substrate may be made of materials such as glass or quartz, and the flexible substrate may be made of materials such as polyimide (PI). The flexible substrate may be a single-layer structure or a laminated structure consisting of an inorganic material layer and a flexible material layer, which is not limited in the present disclosure.

[0199] In an exemplary embodiment, the first insulating layer, the second insulating layer, the third insulating layer and the fourth insulating layer may be any one or more of silicon oxide (SiOx), silicon nitride (SiNx) and silicon oxynitride (SiON), and may be a single layer, a multilayer or a composite layer. The first insulating layer may be referred to as a buffer layer, the second insulating layer and the third insulating layer may be referred to as a (GI) layer, and the fourth insulating layer may be referred to as an interlayer insulating (ILD) layer. The first conductive layer, the second conductive layer and the third conductive layer may be made of metal materials, such as any one or more of silver (Ag), copper (Cu), aluminum (Al), titanium (Ti) and molybdenum (Mo), or alloy materials of the above metals, such as aluminum neodymium alloy (AlNd) or molybdenum niobium alloy (MoNb), and may be a single layer structure, or a multilayer composite structure, such as Ti / Al / Ti, etc. The planar layer may be made of organic materials, such as resin, etc. The semiconductor layer can be made of various materials such as amorphous indium gallium zinc oxide material (a-IGZO), zinc oxynitride (ZnON), indium zinc tin oxide (IZTO), amorphous silicon (a-Si), polycrystalline silicon (p-Si), sexithiophene, polythiophene, etc., that is, the present disclosure is applicable to transistors manufactured based on oxide technology, silicon technology and organic technology, and the present disclosure is not limited here.

[0200] (2) Forming a light emitting structure layer pattern. In an exemplary embodiment, forming a light emitting structure layer pattern may include:

[0201] A fourth conductive film is deposited on the substrate with the aforementioned pattern, and the fourth conductive film is patterned by a patterning process to form an anode electrode layer pattern. The anode electrode layer pattern of each sub-pixel may include at least an anode 201, and the anode 201 is connected to the drain electrode of the transistor 101A through a connecting via.

[0202] Subsequently, a pixel definition film is coated on the substrate with the aforementioned pattern formed thereon, and the pixel definition film is patterned through a patterning process to form a pixel definition layer 22 . The pixel definition layer of each sub-pixel is provided with a pixel opening, and the pixel definition film in the pixel opening is removed to expose the surface of the anode 201 .

[0203] Subsequently, an organic light-emitting layer 203 located at each sub-pixel is formed on the substrate with the aforementioned pattern by evaporation or inkjet printing, and the organic light-emitting layer 203 is connected to the anode 201 through the pixel opening.

[0204] Subsequently, on the substrate with the aforementioned pattern, a cathode 204 pattern is formed by evaporation using an open mask, and the entire cathode 204 is connected to the organic light-emitting layer 203 , thereby achieving simultaneous connection of the organic light-emitting layer 203 to the anode 201 and the cathode 204 .

[0205] At this point, the light-emitting structure layer pattern is prepared, such as Fig.17 As shown, Fig.17 for Figure 3 The cross-sectional view along the AA direction shows the structure of three sub-pixels.

[0206] In an exemplary embodiment, the fourth conductive film may be made of a metal material, a transparent conductive material, or a multilayer composite structure of a metal material and a transparent conductive material. The metal material may include any one or more of silver (Ag), copper (Cu), aluminum (Al), titanium (Ti) and molybdenum (Mo), or an alloy material of the above metals. The transparent conductive material may include indium tin oxide (ITO) or indium zinc oxide (IZO). The multilayer composite structure may be ITO / Al / ITO, etc.

[0207] In an exemplary embodiment, the material of the pixel definition film may include polyimide or acrylic, etc. In an exemplary embodiment, a patterning process of a half tone mask may be used to form a spacer column pattern when forming a pixel definition layer pattern, and the spacer column may be disposed outside the pixel opening, and the spacer column is configured to support a fine metal mask in a subsequent evaporation process, which is not limited in the present disclosure.

[0208] In exemplary embodiments, the organic light emitting layer may include a light emitting layer (EML), and any one or more of a hole injection layer (HIL), a hole transport layer (HTL), an electron blocking layer (EBL), a hole blocking layer (HBL), an electron transport layer (ETL), and an electron injection layer (EIL).

[0209] In an exemplary embodiment, the organic light-emitting layer can be prepared in the following manner: first, an open mask (OPM) evaporation process or an inkjet printing process is used to sequentially form a hole injection layer, a hole transport layer and an electron blocking layer, and a common layer of the hole injection layer, the hole transport layer and the electron blocking layer is formed on the display substrate. Subsequently, a fine metal mask (FMM) evaporation process or an inkjet printing process is used to form different light-emitting layers in different sub-pixels, and the light-emitting layers of adjacent sub-pixels may have a small amount of overlap (for example, the overlapping portion occupies less than 10% of the area of ​​each light-emitting layer pattern), or may be isolated. Subsequently, an open mask evaporation process or an inkjet printing process is used to sequentially form a hole blocking layer, an electron transport layer and an electron injection layer, and a common layer of the hole blocking layer, the electron transport layer and the electron injection layer is formed on the display substrate.

[0210] In an exemplary embodiment, the organic light-emitting layer may include a microcavity adjustment layer so that the thickness of the organic light-emitting layer between the cathode and the anode meets the design of the microcavity length. In some exemplary embodiments, a hole transport layer, an electron blocking layer, a hole blocking layer or an electron transport layer may be used as the microcavity adjustment layer, and the present disclosure is not limited thereto.

[0211] In an exemplary embodiment, the light-emitting layer may include a host material and a guest material doped in the host material, and the doping ratio of the guest material in the light-emitting layer is 1% to 20%. Within the doping ratio range, on the one hand, the host material of the light-emitting layer can effectively transfer the exciton energy to the guest material of the light-emitting layer to excite the guest material of the light-emitting layer to emit light, and on the other hand, the host material of the light-emitting layer "dilutes" the guest material of the light-emitting layer, effectively improving the mutual collision between the molecules of the guest material of the light-emitting layer, and the fluorescence quenching caused by the mutual collision between the energy, thereby improving the luminous efficiency and the life of the device. In an exemplary embodiment, the doping ratio refers to the ratio of the mass of the guest material to the mass of the light-emitting layer, that is, the mass percentage. In an exemplary embodiment, the host material and the guest material can be co-evaporated by a multi-source evaporation process, so that the host material and the guest material are uniformly dispersed in the light-emitting layer, and the doping ratio can be regulated by controlling the evaporation rate of the guest material during the evaporation process, or by controlling the evaporation rate ratio of the host material and the guest material. In an exemplary embodiment, the thickness of the light-emitting layer can be about 10nm to 50nm.

[0212] In an exemplary embodiment, the hole injection layer may be made of an inorganic oxide, such as molybdenum oxide, titanium oxide, vanadium oxide, rhenium oxide, ruthenium oxide, chromium oxide, zirconium oxide, hafnium oxide, tantalum oxide, silver oxide, tungsten oxide or manganese oxide, or may be made of a p-type dopant of a strong electron-withdrawing system and a dopant of a hole transport material, and the thickness of the hole injection layer may be approximately 5 nm to 20 nm.

[0213] In an exemplary embodiment, in an exemplary embodiment, the hole transport layer can use a material with high hole mobility, such as an aromatic amine compound, whose substituent group can be carbazole, methylfluorene, spirofluorene, dibenzothiophene or furan, and the thickness of the hole transport layer can be about 40nm to 150nm.

[0214] In an exemplary embodiment, the hole blocking layer and the electron transport layer may be made of aromatic heterocyclic compounds, such as imidazole derivatives such as benzimidazole derivatives, imidazopyridine derivatives, benzimidazolephenanthridine derivatives; oxazine derivatives such as pyrimidine derivatives and triazine derivatives; compounds containing nitrogen-containing six-membered ring structures such as quinoline derivatives, isoquinoline derivatives, and phenanthroline derivatives (including compounds having phosphine oxide-based substituents on heterocyclic rings), etc. In an exemplary embodiment, the thickness of the hole blocking layer may be about 5nm to 15nm, and the thickness of the electron transport layer may be about 20nm to 50nm.

[0215] In an exemplary embodiment, the electron injection layer may be made of an alkali metal or metal, such as lithium fluoride (LiF), ytterbium (Yb), magnesium (Mg) or calcium (Ca), or compounds of these alkali metals or metals, and the thickness of the electron injection layer may be about 0.5 nm to 2 nm.

[0216] In an exemplary embodiment, the cathode may use any one or more of magnesium (Mg), silver (Ag), aluminum (Al), copper (Cu), and lithium (Li), or an alloy made of any one or more of the above metals.

[0217] In some possible exemplary embodiments, an optical coupling layer pattern can be formed after forming a cathode pattern. The optical coupling layer is disposed on the cathode. The refractive index of the optical coupling layer can be greater than the refractive index of the cathode, which is beneficial to light extraction and increases the light extraction efficiency. The material of the optical coupling layer can be organic material, or inorganic material, or both organic and inorganic material, and can be a single layer, a multi-layer, or a composite layer, which is not limited in the present disclosure.

[0218] (3) Forming a packaging structure layer pattern. In an exemplary embodiment, forming a packaging structure layer pattern may include: on the substrate on which the aforementioned pattern is formed, first depositing a first packaging film by a deposition method using an open mask plate, and then patterning the first packaging film by dry etching to form a first sublayer 24 including a third light processing structure. Alternatively, a third optical glue may be applied after depositing the first packaging film, and the third optical glue may be formed into a third light processing structure by a photolithography process. In an exemplary embodiment, the optical glue may be doped to obtain a third optical glue having a fourth refractive index. Subsequently, a second packaging material is printed by an inkjet printing process using an open mask plate to form a second sublayer 25. Subsequently, a third packaging film is deposited by a deposition method using an open mask plate to form a third sublayer 26.

[0219] At this point, the packaging structure layer pattern is completed, such as Fig.18 As shown, Fig.18 for Figure 3 The cross-sectional view along the AA direction shows the structure of three sub-pixels.

[0220] In an exemplary embodiment, the first sublayer 24 of the encapsulation structure layer may include a plurality of third light processing structures, the plurality of third light processing structures may be disposed on a side of the plurality of light emitting devices 23 away from the substrate 10, and the positions of the plurality of third light processing structures may correspond one to one with the positions of the plurality of light emitting devices 23. The second sublayer 25 may be disposed on a side of the plurality of third light processing structures away from the substrate 10, and the second sublayer 25 may cover the plurality of third light processing structures. The third sublayer 26 may be disposed on a side of the second sublayer 25 away from the substrate 10, and the third sublayer 26 may cover the second sublayer 25.

[0221] In an exemplary embodiment, an orthographic projection of the third light management structure on substrate 10 at least partially overlaps an orthographic projection of a corresponding pixel opening on substrate 10 .

[0222] In an exemplary embodiment, the orthographic projection of the third light management structure on substrate 10 may include the orthographic projection of the corresponding pixel opening on substrate 10 .

[0223] In an exemplary embodiment, the light emitted by the light emitting device 23 can be deflected toward the center of the pixel opening after passing through the third light processing structure, so that more light can be irradiated to the red quantum dot layer or the green quantum dot layer, which helps to better excite the quantum dot material to produce light of the corresponding color, and can also make the blue light passing through the light-transmitting layer more concentrated, thereby improving the light extraction efficiency. In an exemplary embodiment, the center of the pixel opening can be the geometric center of the pixel opening. In an exemplary embodiment, the shape of the third light processing structure can be set according to the actual pixel morphology or process requirements. In a plane parallel to the substrate, the shape of the third light processing structure can be any one or more of the following: triangle, rectangle, pentagon, hexagon, circle and ellipse. In a plane perpendicular to the substrate, the cross-sectional shape of the third light processing structure can include a trapezoid, an inverted trapezoid or a mushroom (T-shaped), etc., and the present disclosure does not limit this.

[0224] In an exemplary embodiment, the fourth refractive index of the third light processing structure may be greater than the fifth refractive index of the second sub-layer 25, and the refraction angle of the light when incident from the third light processing structure to the second sub-layer 25 is smaller than the incident angle, so that relative to the incident light, the light entering the second sub-layer 25 is deflected toward the center of the pixel opening, such as Figure 9a The greater the difference between the fourth refractive index of the third light processing structure and the fifth refractive index of the second sub-layer 25, the greater the degree to which the light entering the second sub-layer 25 is deflected toward the center of the pixel opening.

[0225] In an exemplary embodiment, the fourth refractive index of the third light management structure may be set to be greater than or equal to 1.7 and less than or equal to 1.8. In a plane perpendicular to the substrate, the cross-sectional shape of the third light management structure may be a trapezoid, the length of the upper base of the trapezoid is G3, the length of the lower base is E3, and the height is F3, and the geometric dimension relationship of the trapezoid may be 0.75<(F3 / ((E3-G3) / 2))<0.9.

[0226] In an exemplary embodiment, the first encapsulation film and the third encapsulation film may be made of any one or more of silicon oxide (SiOx), silicon nitride (SiNx) and silicon oxynitride (SiON), and may be a single layer, a multilayer or a composite layer, which can ensure that external water and oxygen cannot enter the light-emitting structure layer, and the deposition method may be chemical vapor deposition (CVD) or atomic layer deposition (ALD). The second encapsulation film may be made of organic materials, such as resin, etc., which plays the role of covering each film layer of the display substrate to improve structural stability and flatness.

[0227] (4) The light conversion layer 30 and the planarization layer 40 are patterned in sequence.

[0228] In an exemplary embodiment, forming the pattern of the light conversion layer 30 may include: first coating a black matrix film on the substrate on which the aforementioned pattern is formed, patterning the black matrix film through a patterning process to form a first black matrix pattern, wherein the first black matrix pattern may include at least a plurality of first black matrices 31, and the plurality of first black matrices 31 may be arranged at intervals to form light-transmitting openings between adjacent first black matrices 31. Subsequently, a plurality of red quantum dot layers, a green quantum dot layer, and a light-transmitting layer may be formed in the light-transmitting openings formed by the first black matrix 31, respectively, by spin coating, inkjet printing, and the like. Subsequently, a flat layer 40 is formed. The material of the flat layer 40 may be an organic material such as an optical adhesive, or may be an inorganic material, which is not limited in the present disclosure.

[0229] At this point, the patterns of the light conversion layer 30 and the planar layer 40 are completed. Fig.19 As shown, Fig.19 for Figure 3 The cross-sectional view along the AA direction shows the structure of three sub-pixels.

[0230] In an exemplary embodiment, the light conversion layer 30 may include at least a plurality of first black matrices 31 and a plurality of quantum dot layers 32. The plurality of first black matrices 31 and the plurality of quantum dot layers 32 may be disposed on a side of the display structure layer 20 away from the substrate 10, the plurality of first black matrices 31 may be disposed at intervals, and light-transmitting openings may be formed between adjacent first black matrices 31, the plurality of quantum dot layers 32 may be disposed at intervals, and are respectively disposed in the plurality of light-transmitting openings, forming a quantum dot layer array separated by the first black matrices 31, and the first black matrices 31 are located between adjacent quantum dot layers 32.

[0231] In an exemplary embodiment, the display structure layer 20 may be provided with a blue light emitting device, and the plurality of quantum dot layers 32 may include a red quantum dot layer emitting red light, a green quantum dot layer emitting green light, and a light-transmitting layer, and the light-transmitting layer may at least transmit blue light. The red quantum dot layer, the green quantum dot layer, and the light-transmitting layer correspond to the blue light emitting device provided in the display structure layer 20, respectively. The red quantum dot layer may be located in the region where the red sub-pixel (third sub-pixel P3) is located, the green quantum dot layer may be located in the region where the green sub-pixel (second sub-pixel P2) is located, and the light-transmitting layer may be located in the region where the blue sub-pixel (first sub-pixel P1) is located. The light emitted by the blue light emitting device excites the red quantum dot layer and the green quantum dot layer to emit red light and green light respectively, and the light emitted by the blue light emitting device is still blue light after passing through the light-transmitting layer, so that the emitted red light, green light, and blue light can be used to display images.

[0232] The pixel definition layer 22 includes a plurality of pixel openings, the pixel openings form a light-emitting area, and a pixel dam is formed between adjacent light-emitting areas. On a plane perpendicular to the substrate, the cross-sectional shape of the pixel dam may be a trapezoid, the length of the lower base of the pixel dam is A, the length of the positive projection of the trapezoidal slope of the pixel dam on the substrate is B, and the length of the pixel opening between adjacent pixel dams is C, that is, the length of the positive projection of the pixel dam on the substrate is A. In an exemplary embodiment, the length B of the positive projection of the trapezoidal slope of the pixel dam on the substrate may be less than or equal to 8 microns, and in other embodiments, the length B of the positive projection of the trapezoidal slope of the pixel dam on the substrate may be less than or equal to 5 microns. In an exemplary embodiment, the positive projection of the third light processing structure on the substrate may include the positive projection of the pixel opening on the substrate, and the size relationship between the third light processing structure and the pixel opening satisfies: C≤G3<E3<C+8, where the unit of the number is microns, which can enable more light to enter the corresponding quantum dot layer. In an exemplary embodiment, in a plane perpendicular to the substrate, the cross-sectional length of the quantum dot layer 32 can be expressed as D, the cross-sectional length of the red quantum dot layer is Dr, the cross-sectional length of the green quantum dot layer is Dg, and the cross-sectional length of the first black matrix 31 between adjacent red quantum dot layers and green quantum dot layers is Db. In an exemplary embodiment, Dr / 2+Dg / 2+Db≤A can be set to ensure that as much light as possible emitted from the slope of the third light processing structure is incident on the corresponding red quantum dot layer or green quantum dot layer. Taking the red quantum dot layer as an example, Fig.11As shown, the cross-sectional length of the red quantum dot layer is Dr, and the pixel opening length is C, and the relationship between the two can be C<Dr<16+C, where the unit of the number is micrometer, and the distance between the adjacent sides of the orthographic projection of the quantum dot layer 32 on the substrate 10 and the orthographic projection of the corresponding pixel opening on the substrate 10 is less than or equal to 8 micrometers. The relationship between the green quantum dot layer and the light-transmitting layer and the pixel opening length C can be the same as that of the red quantum dot layer.

[0233] (5) Forming a pattern of the light management layer 50.

[0234] In an exemplary embodiment, forming the pattern of the light processing layer 50 may include: first depositing a second optical film on the substrate on which the aforementioned pattern is formed by a deposition method, and then patterning the second optical film to form a second light processing structure 53. Alternatively, a second optical adhesive may be coated on the substrate on which the aforementioned pattern is formed, and the second optical adhesive may be formed into the second light processing structure 53 by a photolithography process. In an exemplary embodiment, doping may be performed in the optical adhesive to obtain a second optical adhesive having a third refractive index.

[0235] Then, a first optical film is deposited by a deposition method, and then the first optical film is patterned to form a first light processing structure 51. Alternatively, a first optical adhesive can be coated on the substrate on which the aforementioned pattern is formed, and the first optical adhesive is formed into the first light processing structure 51 by a photolithography process. In an exemplary embodiment, doping can be performed in the optical adhesive to obtain a first optical adhesive having a first refractive index. Then, a third optical film is deposited to form a covering layer 52 covering the plurality of first light processing structures 51.

[0236] In an exemplary embodiment, the first optical film, the second optical film and the third optical film can be made of any one or more of silicon oxide (SiOx), silicon nitride (SiNx) and silicon oxynitride (SiON), and can be a single layer, a multilayer or a composite layer, and the deposition method can be chemical vapor deposition (CVD) or atomic layer deposition (ALD) and the like.

[0237] At this point, the pattern of the light treatment layer 50 is completed. Fig. 20 As shown, Fig. 20 for Figure 3 The cross-sectional view along the AA direction shows the structure of three sub-pixels.

[0238] In an exemplary embodiment, the light processing layer 50 may include a plurality of second light processing structures 53 disposed on a side of the light conversion layer 30 away from the substrate 10, a plurality of first light processing structures 51 disposed on a side of the second light processing structures 53 away from the substrate 10, and a covering layer 52 disposed on a side of the first light processing structures 51 away from the substrate 10. The positions of the plurality of second light processing structures 53 may be arranged in a one-to-one correspondence with the positions of the plurality of first black matrices 31. The positions of the plurality of first light processing structures 51 may correspond to the positions of the plurality of red quantum dot layers and the green quantum dot layers. The covering layer 52 may be disposed on a side of the plurality of first light processing structures 51 away from the substrate 10, and the covering layer 52 may cover the plurality of first light processing structures 51 and the plurality of second light processing structures 53.

[0239] In an exemplary embodiment, a surface of the cover layer 52 on a side away from the substrate 10 may be a planarized surface.

[0240] In an exemplary embodiment, an orthographic projection of the second light management structure 53 on the substrate 10 may overlap with an orthographic projection of the corresponding first black matrix 31 on the substrate 10 .

[0241] In an exemplary embodiment, the orthographic projection of the second light management structure 53 on the substrate 10 may include the orthographic projection of the corresponding first black matrix 31 on the substrate 10 .

[0242] In an exemplary embodiment, the orthographic projection of second light processing structure 53 on substrate 10 at least partially overlaps with the orthographic projection of the red quantum dot layer on substrate 10 , and the orthographic projection of second light processing structure 53 on substrate 10 at least partially overlaps with the orthographic projection of the green quantum dot layer on substrate 10 .

[0243] In an exemplary embodiment, the orthographic projection of second light management structure 53 on substrate 10 does not overlap with the orthographic projection of light-transmitting layer on substrate 10 .

[0244] In an exemplary embodiment, the orthographic projection of the first light processing structure 51 on the substrate 10 at least partially overlaps with the orthographic projection of the corresponding red quantum dot layer on the substrate 10, and the orthographic projection of the first light processing structure 51 on the substrate 10 at least partially overlaps with the orthographic projection of the corresponding green quantum dot layer on the substrate 10.

[0245] In an exemplary embodiment, the orthographic projection of the first light processing structure 51 on the substrate 10 may include the orthographic projection of the corresponding red quantum dot layer on the substrate 10 , and the orthographic projection of the first light processing structure 51 on the substrate 10 may include the orthographic projection of the corresponding green quantum dot layer on the substrate 10 .

[0246] In an exemplary embodiment, the orthographic projection of the first light processing structure 51 on the substrate 10 may substantially coincide with the orthographic projection of the corresponding red quantum dot layer on the substrate 10 , and the orthographic projection of the first light processing structure 51 on the substrate 10 may substantially coincide with the orthographic projection of the corresponding green quantum dot layer on the substrate 10 .

[0247] In an exemplary embodiment, an orthographic projection of the first light management structure 51 on the substrate 10 may overlap with an orthographic projection of the first black matrix 31 on the substrate 10 .

[0248] In an exemplary embodiment, the light emitted by the red quantum dot layer and the green quantum dot layer are deflected toward the center of the red quantum dot layer and the center of the green quantum dot layer respectively after passing through the first light processing structure 51, which can improve the light extraction efficiency of the sub-pixel. In an exemplary embodiment, the center of the red quantum dot layer may be the geometric center of the red quantum dot layer, and the center of the green quantum dot layer may be the geometric center of the green quantum dot layer. In an exemplary embodiment, the shape of the first light processing structure 51 may be set according to the actual pixel morphology or process requirements. On a plane parallel to the display substrate, the shape of the first light processing structure 51 may be any one or more of the following: triangle, rectangle, pentagon, hexagon, circle and ellipse. In a plane perpendicular to the substrate, the cross-sectional shape of the first light processing structure 51 may include a trapezoid, an inverted trapezoid or a mushroom (T-shaped), etc., and the present disclosure is not limited to this. Figure 7a FIG. 5 shows a case where light is emitted directly from the first light processing structure 51. Figure 4a The description in will not be repeated here.

[0249] In an exemplary embodiment, the first refractive index n51 of the first light processing structure 51 can be set to be greater than or equal to 1.75 and less than or equal to 1.85. In a plane perpendicular to the substrate, the cross-sectional shape of the first light processing structure 51 can be a trapezoid, the length of the upper base of the trapezoid is G1, the length of the lower base is E1, and the height is F1. The geometric dimension relationship of the trapezoid can be 0.76<(F1 / ((E1-G1) / 2))<0.984, where the unit of the number is micrometer. In an exemplary embodiment, in a plane perpendicular to the substrate, the cross-sectional length of the quantum dot layer 32 can be expressed as D, the cross-sectional length of the red quantum dot layer is Dr, and the cross-sectional length of the green quantum dot layer is Dg. The upper base length G1 of the first light processing structure 51 can be set to be greater than or equal to the cross-sectional length D of the corresponding quantum dot layer 32, which can ensure that the light of the red quantum dot layer or the green quantum dot layer is more incident on the first light processing structure 51, so that the light emitted by the light conversion layer is more concentrated, and the attenuation degree of the brightness of the red light and the green light with the angle is increased, and it helps to improve the overall light output efficiency; in other embodiments, the upper base length G1 of the first light processing structure 51 can be set to be less than the cross-sectional length D of the corresponding quantum dot layer 32, which helps to better regulate the relationship between brightness attenuation and angle, so as to reduce the color deviation of white light. In practical applications, the relationship between the upper base length of the first light processing structure 51 and the corresponding cross-sectional length Dr of the red quantum dot layer or the cross-sectional length Dg of the green quantum dot layer can be set as needed, and the present disclosure does not limit this.

[0250] In an exemplary embodiment, the first refractive index n51 of the first light management structure 51 may be greater than the third refractive index n53 of the second light management structure 53, and the second incident angle θi2>total reflection critical angle β, total reflection critical angle β=arcsin(n53 / n51).

[0251] In an exemplary embodiment, the light is incident on the interface between the first light processing structure 51 and the second light processing structure 53 at the second incident angle θi2. Since the second incident angle θi2 is greater than the critical angle β of total reflection, the incident light is totally reflected and re-enters the first light processing structure 51 at the second reflection angle θo2. The light re-entering the first light processing structure 51 is deflected toward the center of the sub-pixel, and the second incident angle θi2 = the second reflection angle θo2.

[0252] In an exemplary embodiment, the third refractive index n53 of the second light processing structure 53 can be set to be greater than or equal to 1.42 and less than or equal to 1.53. In a plane perpendicular to the substrate, the cross-sectional shape of the second light processing structure 53 can be a trapezoid, the length of the upper base of the trapezoid is G2, the length of the lower base is E2, and the height is F2. The geometric dimension relationship of the trapezoid can be 0.766<(F2 / ((E2-G2) / 2))<0.939. In an exemplary embodiment, when the orthographic projection of the second light processing structure 53 on the substrate 10 overlaps with the orthographic projection of the red quantum dot layer on the substrate 10, and when the orthographic projection of the second light processing structure 53 on the substrate 10 overlaps with the orthographic projection of the green quantum dot layer on the substrate 10, the larger the overlapping area between the projections, the faster the brightness decay rate with angle changes. In an exemplary embodiment, when the orthographic projection of the second light processing structure 53 on the substrate 10 does not overlap with the orthographic projection of the red quantum dot layer on the substrate 10, and the orthographic projection of the second light processing structure 53 on the substrate 10 does not overlap with the orthographic projection of the green quantum dot layer on the substrate 10, the farther the distance between adjacent boundaries between the projections, the slower the brightness decay rate with angle change. In practical applications, the positional relationship between the orthographic projection of the second light processing structure 53 on the substrate 10 and the orthographic projection of the red quantum dot layer or the green quantum dot layer on the substrate 10 can be set as needed, and the present disclosure is not limited to this.

[0253] In an exemplary embodiment, the light processing structure may only include the second light processing structure 53 , and the light from the red quantum dot layer and the green quantum dot layer can be deflected toward their respective centers under the reflection of the second light processing structure 53 , thereby improving the light extraction efficiency.

[0254] In an exemplary embodiment, the second refractive index of the cover layer 52 may be set to be greater than or equal to 1.4 and less than or equal to 1.55. The thickness H of the cover layer 52 may satisfy F1+F2+1<H<F1+F2+1.5, where the unit of the numbers is micrometer.

[0255] The pixel definition layer 22 includes a plurality of pixel openings, the pixel openings form a light-emitting area, and a pixel dam is formed between adjacent light-emitting areas. On a plane perpendicular to the substrate, the cross-sectional shape of the pixel dam may be a trapezoid, the length of the lower base of the pixel dam is A, the length of the positive projection of the trapezoidal slope of the pixel dam on the substrate is B, and the length of the pixel opening between adjacent pixel dams is C, that is, the length of the positive projection of the pixel dam on the substrate is A. In an exemplary embodiment, the length B of the positive projection of the trapezoidal slope of the pixel dam on the substrate may be less than or equal to 8 microns, and in other embodiments, the length B of the positive projection of the trapezoidal slope of the pixel dam on the substrate may be less than or equal to 5 microns. In an exemplary embodiment, the positive projection of the third light processing structure on the substrate may include the positive projection of the pixel opening on the substrate, and the size relationship between the third light processing structure and the pixel opening satisfies: C≤G3<E3<C+8, where the unit of the number is microns, which can enable more light to enter the corresponding quantum dot layer. In an exemplary embodiment, in a plane perpendicular to the substrate, the cross-sectional length of the quantum dot layer 32 can be expressed as D, the cross-sectional length of the red quantum dot layer is Dr, the cross-sectional length of the green quantum dot layer is Dg, and the cross-sectional length of the first black matrix 31 between adjacent red quantum dot layers and green quantum dot layers is Db. In an exemplary embodiment, Dr / 2+Dg / 2+Db≤A can be set to ensure that as much light as possible emitted from the slope of the third light processing structure is incident on the corresponding red quantum dot layer or green quantum dot layer. Taking the red quantum dot layer as an example, Fig.11 As shown, the cross-sectional length of the red quantum dot layer is Dr, and the pixel opening length is C, and the relationship between the two can be C<Dr<16+C, where the unit of the number is micrometer, and the distance between the adjacent sides of the orthographic projection of the quantum dot layer 32 on the substrate 10 and the orthographic projection of the corresponding pixel opening on the substrate 10 is less than or equal to 8 micrometers. The relationship between the green quantum dot layer and the light-transmitting layer and the pixel opening length C can be the same as that of the red quantum dot layer.

[0256] In an exemplary embodiment, Fig.11 As shown, the distance a between the orthographic projection of the red quantum dot layer on the substrate 10 and the adjacent side of the orthographic projection of the corresponding pixel opening on the substrate 10 may be greater than or equal to 5.5 microns and less than or equal to 9 microns, and the relationship between the green quantum dot layer and the light-transmitting layer and the pixel opening length may be the same as that of the red quantum dot layer. In an exemplary embodiment, the orthographic projection of the second light processing structure 53 on the substrate 10 and the orthographic projection of the pixel opening on the substrate 10 may not overlap, and the distance between the orthographic projection of the second light processing structure 53 on the substrate 10 and the adjacent side of the orthographic projection of the pixel opening on the substrate 10 may be set to be greater than or equal to 4 microns and less than or equal to 6 microns.

[0257] In an exemplary embodiment, taking the red quantum dot layer as an example, the size relationship between the first light processing structure 51 and the red quantum dot layer also satisfies: Dr<G1<E1<A+C. The relationship between the green quantum dot layer and the light-transmitting layer and the pixel opening length can be the same as that of the red quantum dot layer.

[0258] (6) Patterns of the color filter layer 60 and the module layer 70 are formed.

[0259] In an exemplary embodiment, forming the pattern of the color filter layer 60 may include: first coating a black matrix film on the substrate on which the aforementioned pattern is formed, patterning the black matrix film through a patterning process to form a second black matrix pattern, wherein the second black matrix pattern may include at least a plurality of second black matrices 61, and the plurality of second black matrices 61 may be arranged at intervals to form light-transmitting openings between adjacent second black matrices 61. Subsequently, coating a red filter film, a blue filter film, and a green filter film in sequence, patterning the red filter film, the blue filter film, and the green filter film through a patterning process, respectively, to form a plurality of filter layers in the light-transmitting openings formed by the second black matrix 1. Subsequently, the module layer 70 may be prepared using the process of the module section.

[0260] At this point, the color filter layer 60 and the module layer 70 patterns are prepared, such as Fig.21 As shown, Fig.21 for Figure 3 The cross-sectional view along the AA direction shows the structure of three sub-pixels.

[0261] In an exemplary embodiment, the color filter layer 60 may include at least a plurality of second black matrices 61 and a plurality of filter layers 62. The plurality of second black matrices 61 and the plurality of filter layers 62 may be disposed on a side of the light processing layer 50 away from the substrate 10, the plurality of second black matrices 61 may be disposed at intervals, and light-transmitting openings may be formed between adjacent second black matrices 61, the plurality of filter layers 62 may be disposed at intervals, and are respectively disposed in the plurality of light-transmitting openings, forming a filter layer array separated by the second black matrices 61, and the second black matrices 61 are located between adjacent filter layers 62.

[0262] In an exemplary embodiment, the plurality of filter layers 62 may include a red filter layer that transmits red light, a blue filter layer that transmits blue light, and a green filter layer that transmits green light. The red filter layer may be located in the region where the red sub-pixel (third sub-pixel P3) is located, the green filter layer may be located in the region where the green sub-pixel (second sub-pixel P2) is located, and the blue filter layer may be located in the region where the blue sub-pixel (first sub-pixel P1) is located.

[0263] After the above preparation, the structure of the display substrate obtained is as follows Fig.21The display substrate may also include other film layer structures, such as a touch structure layer, a protective layer and other structures, which may be prepared according to actual needs and will not be described in detail here.

[0264] The structure and preparation process shown in the exemplary embodiment of the present disclosure are merely exemplary. In actual implementation, the corresponding structure can be changed and the patterning process can be increased or decreased according to actual needs, and the present disclosure does not limit this.

[0265] Although the embodiments disclosed in the present invention are as above, the contents described are only embodiments adopted to facilitate understanding of the present invention and are not intended to limit the present invention. Any technician in the field to which the present invention belongs can make any modifications and changes in the form and details of implementation without departing from the spirit and scope disclosed in the present invention, but the patent protection scope of the present invention shall still be subject to the scope defined in the attached claims.

Claims

1. A display substrate, characterized in that: include: A substrate, a display structure layer arranged on the substrate, a light conversion layer arranged on a side of the display structure layer away from the substrate, and a light processing layer arranged on a side of the light conversion layer away from the substrate; the light conversion layer at least includes a red quantum dot layer, a green quantum dot layer and a light-transmitting layer; the light processing layer includes a plurality of light processing structures for improving light extraction efficiency and a covering layer arranged on a side of the light processing structure away from the substrate; the orthographic projection of the light processing structure on the substrate at least partially overlaps with the orthographic projection of the red quantum dot layer on the substrate; the orthographic projection of the light processing structure on the substrate at least partially overlaps with the orthographic projection of the green quantum dot layer on the substrate; and the refractive index of the light processing structure is greater than the refractive index of the covering layer; The light processing structure comprises a first light processing structure, the orthographic projection of the first light processing structure on the substrate includes the orthographic projection of the red quantum dot layer on the substrate, and the orthographic projection of the first light processing structure on the substrate includes the orthographic projection of the green quantum dot layer on the substrate; In a plane perpendicular to the substrate, the cross-sectional shape of the first light processing structure is a trapezoid, the length of the upper base of the trapezoid is G1, the length of the lower base is E1, and the height is F1. The dimensional relationship of the trapezoid satisfies: 0.65 microns < (F1 / ((E1-G1) / 2)) < 0.99 microns.

2. The display substrate according to claim 1, characterized in that: The first light processing structure arranged on the red quantum dot layer and the first light processing structure arranged on the green quantum dot layer are arranged at intervals; or, the first light processing structure arranged on the red quantum dot layer and the first light processing structure arranged on the green quantum dot layer are interconnected as an integrated structure.

3. The display substrate according to claim 1, characterized in that: The light conversion layer further includes a first black matrix, which is respectively arranged between the red quantum dot layer, the green quantum dot layer and the light-transmitting layer; The light processing structure comprises a second light processing structure, the second light processing structure is arranged on a side of the light conversion layer away from the substrate, and an orthographic projection of the second light processing structure on the substrate at least partially overlaps with an orthographic projection of the first black matrix on the substrate; The orthographic projection of the second light management structure on the substrate does not overlap with the orthographic projection of the light-transmitting layer on the substrate.

4. The display substrate according to claim 3, characterized in that: In a plane perpendicular to the substrate, the cross-sectional shape of the second light processing structure is a trapezoid, the length of the upper base of the trapezoid is G2, the length of the lower base is E2, and the height is F2. The geometric dimension relationship of the trapezoid satisfies: 0.766 microns < (F2 / ((E2-G2) / 2)) < 0.939 microns.

5. The display substrate according to claim 1, characterized in that: The light conversion layer also includes a first black matrix, which is respectively arranged between the red quantum dot layer, the green quantum dot layer and the light-transmitting layer; the light processing structure includes a first light processing structure and a second light processing structure, the orthographic projection of the first light processing structure on the substrate includes the orthographic projections of the red quantum dot layer and the green quantum dot layer on the substrate, the orthographic projection of the second light processing structure on the substrate at least partially overlaps with the orthographic projection of the first black matrix on the substrate, and the orthographic projection of the second light processing structure on the substrate does not overlap with the orthographic projection of the light-transmitting layer on the substrate.

6. The display substrate according to claim 5, characterized in that: The first light management structure is located on a side of the second light management structure away from the substrate, and a refractive index of the second light management structure is smaller than a refractive index of the first light management structure.

7. The display substrate according to claim 5, characterized in that: The refractive index of the first light management structure is set to be greater than or equal to 1.75 and less than or equal to 1.85; the refractive index of the second light management structure is set to be greater than or equal to 1.42 and less than or equal to 1.

53.

8. The display substrate according to any one of claims 1 to 7, characterized in that: The display structure layer includes a driving circuit layer, a light-emitting structure layer and a packaging structure layer which are sequentially stacked on the substrate; wherein the light-emitting structure layer at least includes a pixel definition layer, on which a pixel opening is arranged; the packaging structure layer includes a plurality of third light processing structures for improving light extraction efficiency, and the orthographic projection of the third light processing structure on the substrate includes the orthographic projection of the pixel opening on the substrate.

9. The display substrate according to claim 8, characterized in that: In a plane perpendicular to the substrate, the cross-sectional shape of the third light processing structure is a trapezoid, the length of the upper base of the trapezoid is G3, the length of the lower base is E3, and the height is F3, and the geometric dimension relationship of the trapezoid satisfies: 0.75 microns < (F3 / ((E3-G3) / 2)) < 0.9 microns; the refractive index of the third light processing structure is set to be greater than or equal to 1.7 and less than or equal to 1.

8.

10. The display substrate according to claim 9, characterized in that: In a plane perpendicular to the substrate, the length of the pixel opening is C, and the size relationship between the third light processing structure and the pixel opening satisfies: C≤G3<E3<C+8 micrometers.

11. The display substrate according to claim 10, characterized in that: The orthographic projection of the quantum dot layer on the substrate includes the orthographic projection of the pixel opening on the substrate, and the distance between the orthographic projection of the quantum dot layer on the substrate and the adjacent sides of the orthographic projection of the pixel opening on the substrate is less than or equal to 8 micrometers; There is a pixel dam between adjacent pixel openings. In a plane perpendicular to the substrate, the length of the pixel dam's positive projection on the substrate is A, the cross-sectional length of the red quantum dot layer is Dr, the cross-sectional length of the green quantum dot layer is Dg, and the cross-sectional length of the first black matrix located between the red quantum dot layer and the green quantum dot layer is Db, Dr / 2+Dg / 2+Db≤A.

12. A display device, characterized in that: The invention comprises a display substrate as claimed in any one of claims 1 to 11.

13. A method for preparing a display substrate, characterized in that: The method comprises: forming a display structure layer on a substrate; forming a light conversion layer on a side of the display structure layer away from the substrate, wherein the light conversion layer at least includes a red quantum dot layer, a green quantum dot layer and a light-transmitting layer; A light processing layer is formed on a side of the light conversion layer away from the substrate, the light processing layer comprises a plurality of light processing structures for improving light extraction efficiency and a covering layer arranged on a side of the light processing structure away from the substrate, the orthographic projection of the light processing structure on the substrate at least partially overlaps with the orthographic projection of the red quantum dot layer on the substrate, the orthographic projection of the light processing structure on the substrate at least partially overlaps with the orthographic projection of the green quantum dot layer on the substrate, and the refractive index of the light processing structure is greater than the refractive index of the covering layer; The light processing structure comprises a first light processing structure, the orthographic projection of the first light processing structure on the substrate includes the orthographic projection of the red quantum dot layer on the substrate, and the orthographic projection of the first light processing structure on the substrate includes the orthographic projection of the green quantum dot layer on the substrate; In a plane perpendicular to the substrate, the cross-sectional shape of the first light processing structure is a trapezoid, the length of the upper base of the trapezoid is G1, the length of the lower base is E1, and the height is F1. The dimensional relationship of the trapezoid satisfies: 0.65 microns < (F1 / ((E1-G1) / 2)) < 0.99 microns.

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