High-power and high-brightness semiconductor laser based on TO package

Abstract

The present invention relates to an optical instrument, and in particular to a high-power and high-brightness semiconductor laser based on TO packaging, which solves the technical problem that the power, brightness and heat dissipation of semiconductor lasers in the prior art are mutually constrained, resulting in a complex structure, a large volume and low electro-optical efficiency of blue light semiconductor lasers. The present invention includes N semiconductor laser tubes, a base, an optical component, an SMA connector component and an optical fiber arranged in the SMA connector component, where N is an integer greater than or equal to 2; the N semiconductor laser tubes are staggered and arranged on the base according to the laser emission direction; the optical component includes a collimator, a beam combiner and a coupling mirror arranged in sequence along the laser emission direction; the N collimators are respectively arranged at the output laser ends of the N semiconductor laser tubes; and the SMA connector component is located on the coupling optical path of the coupling mirror. A semiconductor laser with high power, high brightness, high coupling efficiency, low coupling difficulty, miniaturization and refinement is realized.

Description

Technical Field

[0001] The invention relates to a semiconductor laser, in particular to a high-power and high-brightness semiconductor laser based on TO packaging. Background Art

[0002] Semiconductor lasers have been rapidly developed and widely used in industry in recent years due to their small size, high efficiency and low cost. However, the disadvantages of semiconductor lasers are also obvious, such as difficult heat dissipation, low output power and low beam quality. These disadvantages severely limit the size, coupling efficiency and brightness of high-power blue semiconductor lasers.

[0003] At present, the packaging methods of semiconductor lasers on the market are mainly divided into TO packaging and butterfly packaging. Among them, the butterfly packaging has a complex structure, large size, high cost and is less used. The TO packaging has a simple structure, small size, low cost and is widely used. The traditional TO packaging includes a tube shell, a tube pin, a tube tongue and a base. The heat in the semiconductor laser chip can only be guided to the base through the tube tongue and conducted to the base. At present, the TO tube and the base on the market are generally fitted together, using thermal conductive glue with screws to fasten, the base threaded connection or tube shell welding. These matching methods will result in a large thermal resistance between the base and the base, and the heat cannot be efficiently and quickly conducted to the base, which in turn affects the stability and life of the semiconductor laser. Due to the low power and large divergence angle of the semiconductor laser, the spot of the light focused by multiple semiconductor laser coupling beams after passing through the optical system is large in size, with a lot of stray light and poor beam quality. If the core diameter of the output fiber is large, the output laser brightness will be low; if the core diameter of the fiber is small, the coupling efficiency will be low; and when the light beam is focused into the fiber, a portion of the light energy will enter the cladding of the output fiber, and when passing through the ferrule of the SMA (Sub Miniature A) body, it will leak and gather due to gaps in the bonding material. Currently, most SMA connectors inlaid with sapphire are used on the market, and sapphire is used as a way to discharge cladding light, but the proportion of discharged energy is limited, which limits the power of semiconductor lasers.

[0004] Semiconductor lasers in the existing technology are limited by factors such as the high energy of blue laser photons, the temperature sensitivity of chips, and the strong absorption of blue light by organic glue. As a result, the power, brightness, and heat dissipation of semiconductor lasers are mutually constrained, resulting in complex semiconductor laser structures, large sizes, and low electro-optical efficiency. Summary of the invention

[0005] The purpose of the present invention is to solve the technical problem that the power, brightness and heat dissipation of semiconductor lasers in the prior art are mutually constrained, resulting in complex structure, bulky size and low electro-optical efficiency of semiconductor lasers, and to provide a high-power and high-brightness semiconductor laser based on TO packaging, so as to realize a semiconductor laser with high power, high brightness, high coupling efficiency, low coupling difficulty, miniaturization and refinement.

[0006] In order to solve the above technical problems, the technical solution adopted by the present invention is:

[0007] The high-power and high-brightness semiconductor laser based on TO package is special in that it includes N semiconductor laser tubes, a base, an optical component, an SMA connector component and an optical fiber arranged in the SMA connector component, where N is an integer greater than or equal to 2;

[0008] The N semiconductor laser tubes are staggered and arranged on the base according to the laser emission direction;

[0009] The optical assembly includes a collimator, a beam combiner and a coupling mirror arranged in sequence along the laser emission direction;

[0010] There are N collimating mirrors, which are respectively arranged at the laser output ends of N semiconductor laser tubes;

[0011] The SMA connector assembly is located on the coupling light path of the coupling mirror, and is used to input the coupling light of the coupling mirror into an external medical device through an optical fiber.

[0012] Furthermore, a first tube base and a second tube base are provided on the base;

[0013] The first tube base is provided with a plurality of first mounting holes, and the second tube base is provided with a plurality of second mounting holes;

[0014] N semiconductor laser tubes are respectively arranged in the first mounting hole and the second mounting hole, and the output laser of the semiconductor laser tube in the first mounting hole is collimated by the corresponding collimator and then passes through the second mounting hole between two adjacent semiconductor laser tubes close to the beam combiner.

[0015] Furthermore, it also includes a first shell;

[0016] The first tube base and the second tube base are arranged side by side inside one end of the first shell;

[0017] The collimator, beam combiner and coupling mirror are all arranged in the first housing;

[0018] The SMA connector assembly is disposed at the other end of the first housing;

[0019] The semiconductor laser single tube is arranged in the first mounting hole and the second mounting hole through the base.

[0020] Furthermore, it also includes a preformed solder sheet and a mirror holder;

[0021] The preformed welding piece is matched with the bottom end and the base of the semiconductor laser tube and is located between the semiconductor laser tube and the base; the mirror holder is matched with the laser output end of the semiconductor laser tube and is used to install the collimating mirror.

[0022] Furthermore, the SMA connector assembly includes a coaxially arranged SMA body, a sapphire ring, a heat-conducting tube and a heat-shrinking tube; the receiving end of the SMA body is nested with a sapphire ring, and the output end thereof is connected to one end of the heat-conducting tube; the other end of the heat-conducting tube is provided with a heat-shrinking tube;

[0023] One end of the optical fiber passes through the heat shrink tube, the heat conduction tube, the SMA body and the sapphire ring in sequence, and is flush with the end face of the sapphire ring; the other end of the optical fiber is used to connect with an external medical device; the optical fiber includes a coating layer, a cladding and a core from the outside to the inside; the optical fiber located in the heat shrink tube, the heat conduction tube, the SMA body and the sapphire ring are all cladding and core, and are fixed in the heat conduction tube by high-fold adhesive; the cladding and the SMA body are clearance fit, and the SMA body and the sapphire ring are interference fit;

[0024] The collimator, beam combiner and coupling mirror are all made of glass; the base is made of metal; the collimator and the base are fixed with glue;

[0025] The preformed welding piece is welded to the bottom end of the semiconductor laser single tube; the semiconductor laser single tube is positioned with the base through the top screw;

[0026] The semiconductor laser single tube is coaxially clearance matched with the first mounting hole and the second mounting hole.

[0027] In addition, the present invention also provides a high-power and high-brightness semiconductor laser based on TO packaging, which is special in that it includes N semiconductor laser tubes, a base assembly, an optical component, an SMA connector component, and an optical fiber arranged in the SMA connector component, where N is an integer greater than or equal to 2;

[0028] The base group includes a first base and a second base;

[0029] N semiconductor laser tubes are staggeredly arranged on the first base and the second base according to the laser emission direction;

[0030] The optical assembly includes a collimator, a reflector, and a beam combiner and a coupling mirror sequentially arranged along the reflected light path of the reflector;

[0031] There are N collimating mirrors, which are respectively arranged at the laser emitting ends of the N semiconductor laser tubes;

[0032] The reflectors are N independent reflectors, which are respectively arranged corresponding to the output light paths of the N collimating mirrors, and are used to input the collimated light beams of the N collimating mirrors into the beam combining mirror; or the reflectors are two strip reflectors, which are both located on the output light paths of the N collimating mirrors, and the two strip reflectors are staggered;

[0033] The SMA connector assembly is located on the coupling light path of the coupling mirror, and is used to input the coupling light of the coupling mirror into an external medical device through an optical fiber.

[0034] Furthermore, the first base and the second base are both provided with a first tube base and a second tube base;

[0035] The first tube base is provided with a plurality of first mounting holes, and the second tube base is provided with a plurality of second mounting holes;

[0036] The N semiconductor laser tubes are respectively arranged in the first mounting hole and the second mounting hole, and the output laser of the semiconductor laser tube in the first mounting hole is collimated by the corresponding collimator and then passes through the second mounting hole between two adjacent semiconductor laser tubes close to the beam combiner.

[0037] Furthermore, it also includes a first reflector bracket, a second reflector bracket and a second shell, and the second shell includes a large end and a small end;

[0038] The first base and the second base are arranged oppositely on corresponding sides of the inside of the large end of the second shell;

[0039] The collimator, reflector, beam combiner and coupling mirror are all arranged in the second housing; N independent reflectors or two strip reflectors are respectively arranged on the first reflector bracket and the second reflector bracket; the first reflector bracket and the second reflector bracket are both arranged inside the large end of the second housing and located between the first base and the second base;

[0040] The SMA connector assembly is disposed at the small end of the second housing;

[0041] The semiconductor laser single tube is arranged in the first mounting hole and the second mounting hole through the base.

[0042] Furthermore, the first reflector bracket and the second reflector bracket are perpendicular to each other in space.

[0043] Furthermore, it also includes a preformed solder sheet and a mirror holder;

[0044] The preformed solder piece is matched with the bottom end and the base of the semiconductor laser tube and is located between the semiconductor laser tube and the base; the mirror holder is matched with the laser output end of the semiconductor laser tube and is used to install the collimating mirror;

[0045] The SMA connector assembly includes a coaxially arranged SMA body, a sapphire ring, a heat-conducting tube and a heat-shrinking tube; the receiving end of the SMA body is nested with a sapphire ring, and its output end is connected to one end of the heat-conducting tube; the other end of the heat-conducting tube is provided with the heat-shrinking tube;

[0046] One end of the optical fiber passes through the heat shrink tube, the heat conduction tube, the SMA body and the sapphire ring in sequence, and is flush with the end face of the sapphire ring; the other end of the optical fiber is used to connect with an external medical device; the optical fiber includes a coating layer, a cladding and a core from the outside to the inside; the optical fiber located in the heat shrink tube, the heat conduction tube, the SMA body and the sapphire ring are all cladding and core, and are fixed in the heat conduction tube by high-fold adhesive; the cladding and the SMA body, and the SMA body and the sapphire ring are interference fit;

[0047] The collimator, beam combiner and coupling mirror are all made of glass; the base is made of metal; the collimator and the base are fixed with glue;

[0048] The preformed welding piece is welded to the bottom end of the semiconductor laser single tube; the semiconductor laser single tube is positioned with the base through the top screw;

[0049] The semiconductor laser single tube is coaxially clearance matched with the first mounting hole and the second mounting hole.

[0050] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0051] (1) The high-power and high-brightness semiconductor laser based on TO package of the present invention can be applied to semiconductor lasers with laser wavelength less than 500nm, power greater than 100W and brightness greater than 25MW / (cm2·sr). It uses a base to stagger N semiconductor laser tubes on the base, thereby increasing the permissible power of the semiconductor laser tube; through the mutual cooperation of the collimator, reflector, beam combiner and coupling mirror, and through the high-power SMA connector assembly, the energy in the optical fiber is evenly output from the SMA connector assembly, thereby increasing the laser beam density and coupling permissible power, thereby improving the brightness.

[0052] (2) The present invention arranges the first tube seat and the second tube seat in pairs on the base, so that the optical axis of the corresponding semiconductor laser tube is misaligned, and the laser beam on the first tube seat is emitted from the gap of the second tube seat, thereby reducing the occupied size of the semiconductor laser tube base, increasing the laser beam density, and improving the permissible power of the semiconductor laser tube.

[0053] (3) The present invention also uses a preformed solder sheet to connect the semiconductor laser tube to the base, thereby reducing thermal resistance, enhancing heat transfer efficiency, reducing the effect of temperature on the semiconductor laser tube, and increasing the permissible output power of the semiconductor laser tube. Therefore, the present invention solves the technical problems of the existing semiconductor lasers, such as the power, brightness, and heat dissipation being mutually constrained, the structure being complex, the volume being large, and the electro-optical efficiency being low.

[0054] (4) In the laser beam emitted by the collimated semiconductor laser tube of the present invention, the collimator is made of glass material and the base is made of metal material. Since the contact area between glass and metal is small, it is difficult to form a chemical bond with glue, so it is difficult for the collimator to form a stable connection with the base. Therefore, the mirror holder is used as a transition piece between metal and glass to connect the base and the collimator, and the contact area between the collimator and the base is indirectly increased through the mirror holder to prevent the problem of unstable bonding.

[0055] (5) The present invention uses the first tube seat, the first mounting hole and the second mounting hole on the second tube seat to clamp the semiconductor laser tube in a coaxial clearance fit manner to ensure the verticality of the window of the semiconductor laser tube emitting laser and the side wall of the base near the bottom of the semiconductor laser tube. The semiconductor laser tube is positioned with the base through the top screw, so that the position of the semiconductor laser tube in the base is closer to the side of the base near the base, thereby ensuring that the light spot of the semiconductor laser tube is more accurate; the preformed welding piece is welded to the bottom of the semiconductor laser tube, which enhances the heat conduction between the semiconductor laser tube and the base.

[0056] (6) The high-power SMA connector assembly of the present invention uses a front sapphire ring as the first-stage cladding light leakage device, and a heat pipe is used as the second-stage cladding light leakage device after the SMA connector assembly. The optical fiber and the sapphire ring are gap-matched, the optical fiber is gap-matched in the SMA body, and the optical fiber is sealed in the heat pipe by glue filling, which ensures the coaxiality of the optical fiber and the SMA connector assembly and completely leaks the stray light in the cladding.

[0057] (7) In the high-power and high-brightness semiconductor laser based on TO package of the present invention, since a reflector is also provided, when the reflector is N independent reflectors, the N independent reflectors are respectively provided corresponding to the output light paths of the N collimating mirrors, and are used to input the collimated light beams of the N collimating mirrors into the beam combining mirror; or the reflector is two strip reflectors, the two strip reflectors are both located on the output light paths of the N collimating mirrors, and the two strip reflectors are staggered; therefore, the first base and the second base are added, so that more semiconductor laser tubes can be staggered on the first base and the second base, thereby improving the duty cycle of the base group; the output laser of the semiconductor laser tube changes the beam direction and compresses the beam space through the reflector, thereby increasing the beam density and increasing the coupled output power of the semiconductor laser tube.

[0058] (8) The second shell of the present invention includes a large end and a small end, and the first base and the second base are arranged on the corresponding two sides inside the large end of the second shell relatively to each other, and the reflector is arranged by using the cross-arranged first reflector bracket and the second reflector bracket to further increase the laser beam density, and the structure is simple and easy to implement. BRIEF DESCRIPTION OF THE DRAWINGS

[0059] Figure 1 It is a structural schematic diagram of a first embodiment of a high-power and high-brightness semiconductor laser based on TO packaging of the present invention;

[0060] Figure 2 It is a schematic diagram of the installation structure of the semiconductor laser single tube and the collimating mirror in the first embodiment;

[0061] Figure 3 is a schematic structural diagram of the SMA connector assembly in Example 1;

[0062] Figure 4 It is a structural schematic diagram of a second embodiment of a high-power and high-brightness semiconductor laser based on TO packaging of the present invention;

[0063] Figure 5 is a schematic diagram of the structure of a semiconductor laser single tube and two reflecting mirrors in the second embodiment;

[0064] Figure 6 It is a schematic diagram of the internal light beam of the SMA connector assembly in the second embodiment.

[0065] The accompanying drawings in the figure are marked as follows:

[0066] 1-single semiconductor laser tube, 2-base, 20-base, 21-first tube base, 22-second tube base, 201-top screw, 202-mirror support, 203-first base, 204-second base; 3-SMA connector assembly, 31-SMA body, 32-sapphire ring, 33-heat pipe, 34-high fold adhesive, 35-heat shrink tube; 4-optical fiber, 400-optical fiber end face, 401-coating layer, 402-cladding; 5-collimator, 6-beam combiner, 7-coupling mirror, 81-first shell, 82-second shell; 9-reflector, 91-first reflector bracket, 92-second reflector bracket; 10-preformed solder sheet. DETAILED DESCRIPTION

[0067] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the technical solution in the present invention, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present invention.

[0068] Embodiment 1

[0069] like Figure 1 As shown, the high-power and high-brightness semiconductor laser based on TO package of the present invention includes N semiconductor laser tubes 1, a base 2, an optical component, an SMA connector component 3 and an optical fiber 3 arranged in the SMA connector component 3, N is an integer greater than or equal to 2; in this embodiment, the value of N is 8; the 8 semiconductor laser tubes 1 are staggered and arranged on the base 2 according to the laser emission direction; the optical component includes a collimator 5, a beam combiner 6 and a coupling mirror 7 arranged in sequence along the laser emission direction; there are 8 collimators 5, and the 8 collimators 5 are respectively arranged at the laser emission ends of the 8 semiconductor laser tubes 1; the SMA connector component 3 is located on the coupling light path of the coupling mirror 7, and is used to input the coupling light of the coupling mirror 7 into the external medical device through the optical fiber 4.

[0070] The existing TO package refers to a chip, a tube tongue, a tube pin, a tube cap, a sealing window and a base. In this embodiment, the semiconductor laser single tube 1 is a coaxial light-emitting semiconductor laser single tube in a TO package, which mainly relies on the base 2 and the base 20 for heat dissipation. The increase in operating temperature will cause the laser wavelength to change, and the power of the semiconductor laser single tube 1 will be unstable. High-brightness and high-power semiconductor laser refers to a semiconductor laser coupled with an optical fiber 4 with a power greater than 100W and a brightness greater than 25MW / (cm2.sr).

[0071] In this embodiment, the base 2 is provided with a first tube seat 21 and a second tube seat 22; the first tube seat 21 is provided with a plurality of first mounting holes, and the second tube seat 22 is provided with a plurality of second mounting holes; 8 semiconductor laser single tubes 1 are respectively provided in the first mounting holes and the second mounting holes, and the semiconductor laser single tube 1 is coaxially clearance-matched with the first mounting holes and the second mounting holes, and the outgoing laser of the semiconductor laser single tube 1 in the first mounting hole is collimated by the corresponding collimator 5, and then passes through the second mounting hole between two adjacent semiconductor laser single tubes 1 near the beam combiner 6. The first tube seat 21 and the second tube seat 22 are arranged side by side inside one end of the first shell 81; wherein the first shell 81 is a rectangular body structure; the collimator 5, the beam combiner 6 and the coupling mirror 7 are all arranged in the first shell 81; the SMA connector assembly 3 is arranged at the other end of the first shell 81; the semiconductor laser single tube 1 is arranged in the first mounting hole and the second mounting hole through the base 20.

[0072] First, install the semiconductor laser single tube 1 in the base 20 in the base 2, and the fast axis of the semiconductor laser single tube 1 is perpendicular to the plane of the base 20. The laser emitted by the semiconductor laser single tube 1 forms a parallel collimated light beam after passing through the collimator 5. The parallel light beam emitted by the first tube seat 21 is emitted from the gap between the two adjacent second tube seats 22, and the emitted parallel light beams are arranged in a rectangle. After passing through the beam combiner 6 and the coupling mirror 7, the coupled light is formed and enters the optical fiber 4 fixed by the high-power SMA connector assembly 3, and is output. All components are installed in the first shell 81 of the rectangular structure. In this embodiment, the TO-packaged semiconductor laser single tube 1 is welded and fixedly connected to the hole on the base 20. During welding, a top screw 201 is required to press the semiconductor laser single tube 1 and the base 20 to enhance the welding effect.

[0073] like Figure 2 As shown, the semiconductor laser tube 1 is preferably an OSRAM product, which has a good slow axis beam quality. There are three heat sinks on the base 20 of the semiconductor laser tube 1, and the extension lines of the three heat sinks are perpendicular to each other. Two symmetrical heat sinks are selected to correspond to the base 20. The semiconductor laser tube 1 and the base 20 are clearance-matched, and the rear end of the semiconductor laser tube 1 coincides with the bottom surface of the base 20 hole on the base 2, and the heat sink is locked by the top screw 201.

[0074] A preformed solder sheet 10 is placed between the back of the semiconductor laser tube 1 and the base 20. The preformed solder sheet 10 is preferably made of copper-zinc material, and its shape matches the semiconductor laser tube 1. The preformed solder sheet 10 is welded to the bottom end of the semiconductor laser tube 1. Before welding, the semiconductor laser tube 1 is positioned and clamped. At the same time, the semiconductor laser tube 1 is positioned with the base 20 through the top screw 201; the top screw 201 on the base 20 is locked. After reflow welding, the preformed solder sheet 10 forms a chemical bond with the base 20 and the semiconductor laser tube 1, and is fixed to each other to form a good thermal conductor, which efficiently transfers the heat of the semiconductor chip (i.e., the semiconductor laser tube 1) to the base 2. In this embodiment, the base 2 can also be equipped with a water-cooled or air-cooled heat sink to quickly dissipate the heat.

[0075] In this embodiment, the collimator 5, the beam combiner 6 and the coupling mirror 7 are all made of glass materials; each semiconductor laser tube 1 is matched with a collimator 5, and the collimator 5 is installed on the output light path of the semiconductor laser tube 1, and each collimator 5 corresponds to the light beam of each semiconductor laser tube 1. In this embodiment, the collimator 5 is preferably a double-focal length collimator or a FAC additional spherical cylindrical lens. It is difficult to form a stable bonding chemical bond between glass and metal, so the collimator 5 is installed using a mirror holder 202 as a transition piece. The mirror holder 202 is preferably a quartz ring, whose inner diameter is slightly smaller than the diameter of the tube cap of the semiconductor laser tube 1, and whose outer diameter is slightly larger than the diameter of the base 20 of the semiconductor laser tube 1. The mirror holder 202 is tightly matched or glued to the front step of the base 20. After the collimator 5 is adjusted, it is glued and fixed to the mirror holder 202, and then glued and fixed to the base 20 with glue, and the same material gluing stability is very good. The beam combiner 6 and the coupling mirror 7 are both installed in the corresponding grooves in the first shell 81.

[0076] like Figure 3 As shown, the laser beam of the semiconductor laser single tube 1 passes through the beam combiner 6 and the coupling mirror 7 and enters the optical fiber 4 fixed by the high-power SMA connector assembly 3. The portion of the optical fiber 4 in the SMA connector assembly 3 has been stripped of the coating 401, leaving only the cladding 402 and the core diameter. The portion of the optical fiber 4 in contact with the air is the coating 401, the cladding 402 and the core. According to laser theory, 85% of the energy boundary of the laser beam belongs to the effective size. If a large core diameter optical fiber 4 is used, the output laser brightness will be reduced; if optical fiber 4 is used, the coupling efficiency is reduced, and part of the energy enters the cladding 402 of the optical fiber 4 to form cladding light. The cladding light is unstable and it is very easy to burn the optical fiber 4.

[0077] The SMA connector assembly 3 in this embodiment includes a coaxially arranged SMA body 31, a sapphire ring 32, a heat-conducting tube 33 and a heat-shrinking tube 35; the receiving end of the SMA body 31 is nested with a sapphire ring 32, and its output end is connected to one end of the heat-conducting tube 33; the other end of the heat-conducting tube 33 is provided with a heat-shrinking tube 35; one end of the optical fiber 4 passes through the heat-shrinking tube 35, the heat-conducting tube 33, the SMA body 31 and the sapphire ring 32 in sequence, and is flush with the end face of the sapphire ring 32; the other end of the optical fiber 4 is used to connect to an external medical device; the optical fiber 4 includes a coating layer 401, a cladding 402 and a core from the outside to the inside; the optical fiber 4 The parts located in the heat shrink tube 35, the heat pipe 33, the SMA body 31 and the sapphire ring 32 are all cladding and fiber core, and are fixed in the heat pipe 33 by high folding glue 34; the cladding 402 and the SMA body 31 are clearance fit, and the SMA body 31 and the sapphire ring 32 are interference fit; the front end of the high-power SMA connector assembly 3 uses a sapphire ring 32 as a primary cladding light leakage measure, and the rear end heat pipe 33 is filled with high folding glue 34 as a secondary cladding light leakage measure, and the optical fiber 4 is suspended in the core gap of the SMA connector assembly 3, and is fixed in the high folding glue 34 filled in the heat pipe 33 to prevent the cladding light from leaking out of the core. When the energy in the cladding 402 of the optical fiber 4 passes through the sapphire ring 32, part of the energy is introduced into the sapphire ring 32, and the heat is conducted to the SMA body 31 of the connector. The residual energy in the cladding 402 reaches the heat pipe 33 through the ferrule of the SMA connector assembly 3, and the cladding light is pumped out by the high-fold glue 34, and the heat is promptly dissipated into the environment by the heat pipe 33. The inner cavity of the heat pipe 33 is conical, and the taper is preferably 1.1 to 1.3, and the starting diameter is slightly larger than the diameter of the cladding 402 of the optical fiber 4. After the coaxiality of the optical fiber 4 and the SMA connector assembly 3 is adjusted, the inner cavity of the heat pipe 33 is filled with glue to fix it. The outer diameter of the heat pipe 33 is the same as the diameter of the SMA body 31 of the SMA connector assembly 3, and the outer side is preferably provided with a heat dissipation fin groove. The heat shrink tube 35 connects the rear end of the heat pipe 33 and the coating layer 401 of the optical fiber 4 to prevent the small diameter optical fiber 4 from bending. The optical fiber 4 and the sapphire ring 32 are gap-matched, preferably with a micron-level gap. The length of the heat pipe 33 can be set according to the laser power and coupling efficiency to ensure that the light energy in the cladding 402 is completely discharged. The inner diameter of the heat pipe 33 is larger than the diameter of the coating layer 401 of the optical fiber 4 to prevent the preferred funnel-shaped inner cavity and facilitate glue filling.

[0078] After the semiconductor laser tube 1 is installed, the outgoing light beam on the first tube seat 21 is emitted from the gap of the second tube seat 22 to increase the size duty ratio of the light exit window of the semiconductor laser tube 1 (the ratio of the laser light exit window size to the base 2 spacing size), thereby increasing the laser beam density. According to the optical parameter product formula, it can be seen that the optical parameter product of the slow axis of Osram's products is eight times the optical parameter product of the fast axis, and by comparing the laser fast and slow axis optical parameter product and the size of the base 2 of the semiconductor laser tube 1, it can be seen that two paired first tube seats 21 and second tube seats 22 are preferably used as a group, and the first tube seat 21 and the second tube seat 22 each include four bases 20, with a total of eight semiconductor laser tubes 1. After the light beam enters the beam combiner 6, eight vertical light spots will be formed, and after entering the coupling mirror 7, a circular light spot will be formed.

[0079] Embodiment 2

[0080] like Figure 4 As shown, the difference between Example 2 and Example 1 is that the optical component in Example 2 includes a collimator 5, a reflector 9, and a beam combiner 6 and a coupling mirror 7 sequentially arranged along the reflection light path of the reflector 9; there are N collimators 5, and the N collimators 5 are respectively arranged at the output laser ends of the N semiconductor laser single tubes 1; the reflector 9 is N independent reflectors, and the N independent reflectors are respectively arranged corresponding to the output light paths of the N collimators 5, so as to input the collimated light beams of the N collimators 5 into the beam combiner 6; the reflector 9 can also be arranged as two strip reflectors, both of which are located on the output light paths of the N collimators 5, and the two strip reflectors are staggered; in this embodiment, the value of N is 16.

[0081] Embodiment 2 is also provided with a base group and a second shell 82; the base group includes a paired first base 203 and a second base 204, and the second shell 82 includes a large end and a small end; the first base 203 and the second base 204 are relatively arranged on the corresponding two sides inside the large end of the second shell 82, and the height of the first base 203 is lower than the height of the second base 204 (the height of the first base 203 can also be higher than the height of the second base 204); the light beams on the first base 203 and the second base 204 are relatively staggered and emitted, and a reflector 9 is used to change the light path. 16 independent reflectors are correspondingly arranged on the first reflector bracket 91 and the second reflector bracket 92; the first reflector bracket 91 and the second reflector bracket 92 are both arranged inside the large end of the second shell 82 and are located between the first base 203 and the second base 204 (in other embodiments, those skilled in the art can also arrange two strip reflectors on the first reflector bracket 91 and the second reflector bracket 92 according to needs or usage environment restrictions; the first reflector bracket 91 and the second reflector bracket 92 are both arranged inside the large end of the second shell 82 and are located between the first base 203 and the second base 204); the first reflector bracket 91 and the second reflector bracket 92 are used to change the direction of the light beam and compress the light beam space to increase the light beam density. In this embodiment, the first reflector bracket 91 and the second reflector bracket 92 are preferably prism reflectors. Each semiconductor laser single tube 1 is installed on the first mounting hole and the second mounting hole of the matching first base 203 and the second base 204, and is matched with a collimator 5, and the collimator 5 is installed outside the semiconductor laser single tube 1. The 16 collimated light beams emitted from the paired first base 203 and the second base 204 pass through the collimator 5, reach the corresponding prism reflector, and turn to the optical axis direction of the beam combiner 6, pass through the beam combiner 6 and the coupling mirror 7, and enter the optical fiber 4 fixed by the high-power SMA connector assembly 3. The power of the second embodiment is doubled compared with the power of the first embodiment, and the optical system remains unchanged.

[0082] like Figure 5 As shown, according to Figure 5In the arrangement of the semiconductor laser single tube 1, after the light beam emitted by the semiconductor laser single tube 1 is collimated by the collimator 5, the light beam emits the laser inward in the layout mode of the first base 203 and the second base 204 arranged relatively to reach the reflector 9 of the first reflector bracket 91 and the second reflector bracket 92. The first reflector bracket 91 and the second reflector bracket 92 are composed of 16 independent reflector prisms corresponding to two rows. After the collimated light beams emitted from the first base 203 and the second base 204 reach the reflector 9 of the first reflector bracket 91 and the second reflector bracket 92, they are all converted to the optical axis of the beam combiner 6 and enter the beam combiner 6. At this time, the collimated light beam will form two rows of eight light spots each. After that, the light beam enters the coupling mirror 7 to form coupled light, and forms two circular light spots at the end face 400 of the optical fiber 4. By adjusting the pitch angles of the first reflector bracket 91 and the second reflector bracket 92, the two coupled light spots can be merged together and enter the optical fiber 4 to increase the coupling efficiency. In the second embodiment, the first reflector bracket 91 and the second reflector bracket 92 are perpendicular to each other in space.

[0083] After passing through the chip of the semiconductor laser tube 1, part of the electric energy is converted into light energy and part of it is converted into heat energy. According to the product parameters of OSRAM, the electro-optical conversion efficiency of the semiconductor laser tube 1 is about 33%, and the heat energy is transferred to the first base 203 and the second base 204 of the semiconductor laser tube 1. The first base 203 and the second base 204 are both matched with the holes on the base 20, and the preformed solder sheet 10 is used for transition connection to reduce thermal resistance. In addition, the first base 203 and the second base 204 are preferably made of copper, which can efficiently and quickly transfer the heat of the semiconductor laser tube 1 from the base 20 to the first base 203 and the second base 204. The first base 203 and the second base 204 are connected to a cooling device to dissipate the heat. The heat of the first base 203 and the second base 204 is the main part of the heat of the entire semiconductor laser, among which the heat transfer efficiency and rate of the semiconductor laser tube 1 and the first base 203 and the second base 204 affect the efficiency of the entire semiconductor laser.

[0084] The electrical energy converted into heat energy by the laser of the semiconductor laser tube 1 is transmitted to the environment through the first base 203 and the second base 204, and the electrical energy converted into light energy is output through the optical component. In this embodiment, the light energy emitted from the semiconductor laser tube 1 passes through the coated optical components, namely the collimator 5, the beam combiner 6, the coupling mirror 7 and the optical fiber 4, with little light energy loss less than 5%, and the generated heat is directly dissipated through the second housing 82.

[0085] like Figure 6As shown, the coating layer 401 is removed from the front end of the optical fiber 4, leaving only the cladding 402 and the core. When the coupled light enters the optical fiber 4, the light energy is divided into three parts at the end face of the optical fiber 4, namely, the core light, the cladding light and the stray light. The core light (the light energy entering the core of the optical fiber 4) is the effective output of the laser, and the ratio of the effective output light energy to the laser beam energy is the coupling efficiency. The coupling efficiency of the laser is generally above 85% or 90%. The cladding light (the light energy entering the cladding 402) is unstable, and it is easy to leak as long as the environmental factors change (stress strain, medium change). Therefore, it is easy for the cladding light to leak in the ferrule of the SMA connector assembly 3 to generate heat accumulation and burn the optical fiber 4. When the high-power SMA connector assembly 3 of the present invention is used, when the cladding 402 energy passes through the sapphire ring 32, due to the high refractive index of sapphire, part of the cladding light energy will be extracted and converted into heat and transferred to the SMA body 31. When the residual cladding light energy passes through the ferrule, the cladding light energy of the optical fiber 4 will not leak because it is suspended. When the cladding light energy passes through the heat pipe 33 , the cladding light energy is pumped by the high-folding glue 34 , and the cladding light energy decays rapidly with the transmission length. The pumped light energy is converted into heat energy and transferred to the heat pipe 33 .

[0086] The inner cavity shape of the heat pipe 33 is preferably conical, with the front diameter smaller than the rear diameter, and the cone angle is preferably 1.1 to 1.3. This is convenient for glue filling and prevents the capillary action of non-Newtonian fluids. The energy of the high-fold glue 34 pumping the cladding light will decrease exponentially with the transmission length. Therefore, after the heat pipe 33 is filled with glue, the glue layer at the front end of the heat pipe 33 is thinner than the glue layer at the rear end, and due to the cone angle, the pumping light at the front end will be reflected to the rear end, ensuring that the heat dissipation of the entire heat pipe 33 is uniform.

[0087] The rest of the second embodiment is the same as the first embodiment.

Claims

1. A high-power and high-brightness semiconductor laser based on TO package, characterized in that: The invention comprises N semiconductor laser tubes (1), a base (2), an optical component, an SMA connector component (3), and an optical fiber (4) arranged in the SMA connector component (3), wherein N is an integer greater than or equal to 2; The N semiconductor laser tubes (1) are respectively arranged on the base (2) in a staggered manner according to the laser emission direction; The optical component comprises a collimator (5), a beam combiner (6) and a coupling mirror (7) which are arranged in sequence along the laser emission direction; There are N collimating lenses (5), and the N collimating lenses (5) are respectively arranged at the laser output ends of the N semiconductor laser single tubes (1); The SMA connector assembly (3) is located on the coupling light path of the coupling mirror (7) and is used to input the coupling light of the coupling mirror (7) into an external medical device through an optical fiber (4); the SMA connector assembly (3) comprises a coaxially arranged SMA body (31), a sapphire ring (32), a heat conducting tube (33) and a heat shrink tube (35); A sapphire ring (32) is nested at the receiving end of the SMA body (31), and an output end thereof is connected to one end of a heat conducting tube (33); the other end of the heat conducting tube (33) is provided with the heat shrink tube (35); One end of the optical fiber (4) passes through the heat shrink tube (35), the heat conducting tube (33), the SMA body (31) and the sapphire ring (32) in sequence and is flush with the end face of the sapphire ring (32); the other end of the optical fiber (4) is used to connect to an external medical device; the optical fiber (4) comprises a coating layer (401), a cladding (402) and a fiber core from the outside to the inside; the portion of the optical fiber (4) located inside the heat shrink tube (35), the heat conducting tube (33), the SMA body (31) and the sapphire ring (32) is the cladding and the fiber core, and is fixed in the heat conducting tube (33) by means of a high fold adhesive (34).

2. The high-power and high-brightness semiconductor laser based on TO packaging according to claim 1 is characterized in that: The base (2) is provided with a first tube seat (21) and a second tube seat (22); The first tube seat (21) is provided with a plurality of first mounting holes, and the second tube seat (22) is provided with a plurality of second mounting holes; N semiconductor laser tubes (1) are respectively arranged in a first mounting hole and a second mounting hole, and the laser emitted from the semiconductor laser tube (1) in the first mounting hole is collimated by a corresponding collimator (5) and then passes through the second mounting hole between two adjacent semiconductor laser tubes (1) close to the beam combiner (6).

3. The high-power and high-brightness semiconductor laser based on TO packaging according to claim 2 is characterized in that: Also includes a first shell (81); The first tube seat (21) and the second tube seat (22) are arranged side by side inside one end of the first shell (81); The collimating mirror (5), the beam combining mirror (6) and the coupling mirror (7) are all arranged in the first housing (81); The SMA connector assembly (3) is arranged at the other end of the first housing (81); The semiconductor laser single tube (1) is arranged in the first mounting hole and the second mounting hole through a base (20).

4. The high-power and high-brightness semiconductor laser based on TO packaging according to claim 3 is characterized in that: Also includes a preformed solder sheet (10) and a mirror holder (202); The preformed solder sheet (10) is matched with the bottom end of the semiconductor laser tube (1) and the base (20), and is located between the semiconductor laser tube (1) and the base (20); The mirror holder (202) is adapted to the laser output end of the semiconductor laser single tube (1), and the mirror holder (202) is used to install the collimating mirror (5).

5. The high-power and high-brightness semiconductor laser based on TO packaging according to claim 4 is characterized in that: The cladding (402) and the SMA body (31) are clearance fit, and the SMA body (31) and the sapphire ring (32) are interference fit; The collimator (5), beam combiner (6) and coupling mirror (7) are all made of glass; the base (20) is a metal base; the collimator (5) and the base (20) are fixed by gluing; The preformed welding sheet (10) is welded to the bottom end of the semiconductor laser single tube (1); the semiconductor laser single tube (1) is positioned with the base (20) via a top screw (201); The semiconductor laser single tube (1) is coaxially clearance-matched with the first mounting hole and the second mounting hole.

6. A high-power and high-brightness semiconductor laser based on TO packaging, characterized in that: The invention comprises N semiconductor laser tubes (1), a base assembly, an optical component, an SMA connector component (3), and an optical fiber (4) arranged in the SMA connector component (3), wherein N is an integer greater than or equal to 2; The base assembly comprises a first base (203) and a second base (204); N semiconductor laser single tubes (1) are staggeredly arranged on the first base (203) and the second base (204) according to the laser emission direction; The optical component comprises a collimator (5), a reflector (9), and a beam combiner (6) and a coupling mirror (7) which are sequentially arranged along the reflection light path of the reflector (9); There are N collimating lenses (5), and the N collimating lenses (5) are respectively arranged at the laser output ends of the N semiconductor laser single tubes (1); The reflectors (9) are N independent reflectors, which are respectively arranged corresponding to the output light paths of the N collimating mirrors (5) and are used to input the collimated light beams of the N collimating mirrors (5) into the beam combining mirror (6); or the reflectors (9) are two strip reflectors, which are both located on the output light paths of the N collimating mirrors (5) and are staggered. The SMA connector assembly (3) is located on the coupling optical path of the coupling mirror (7) and is used to input the coupling light of the coupling mirror (7) into an external medical device through an optical fiber (4); the SMA connector assembly (3) comprises a coaxially arranged SMA body (31), a sapphire ring (32), a heat conducting tube (33) and a heat shrink tube (35); the sapphire ring (32) is nested at the receiving end of the SMA body (31), and the output end thereof is connected to one end of the heat conducting tube (33); the heat shrink tube (35) is arranged at the other end of the heat conducting tube (33); One end of the optical fiber (4) passes through the heat shrink tube (35), the heat conducting tube (33), the SMA body (31) and the sapphire ring (32) in sequence and is flush with the end face of the sapphire ring (32); the other end of the optical fiber (4) is used to connect to an external medical device; the optical fiber (4) comprises, from the outside to the inside, a coating layer (401), a cladding (402) and a fiber core; the portion of the optical fiber (4) located inside the heat shrink tube (35), the heat conducting tube (33), the SMA body (31) and the sapphire ring (32) is the cladding (402) and the fiber core, and is fixed in the heat conducting tube (33) by means of a high-fold adhesive (34).

7. The high-power and high-brightness semiconductor laser based on TO packaging according to claim 6, characterized in that: A first tube seat (21) and a second tube seat (22) are both provided on the first base (203) and the second base (204); The first tube seat (21) is provided with a plurality of first mounting holes, and the second tube seat (22) is provided with a plurality of second mounting holes; N semiconductor laser tubes (1) are respectively arranged in a first mounting hole and a second mounting hole, and the laser emitted from the semiconductor laser tube (1) in the first mounting hole is collimated by a corresponding collimator (5) and then passes through the second mounting hole between two adjacent semiconductor laser tubes (1) close to the beam combiner (6).

8. The high-power and high-brightness semiconductor laser based on TO packaging according to claim 7, characterized in that: It also includes a first reflector bracket (91), a second reflector bracket (92) and a second shell (82), wherein the second shell (82) includes a large end and a small end; The first base (203) and the second base (204) are arranged opposite to each other on two corresponding sides inside the large end of the second shell (82); The collimator (5), the reflector (9), the beam combiner (6) and the coupling mirror (7) are all arranged in the second shell (82); the N independent reflectors or the two strip reflectors are respectively arranged on the first reflector bracket (91) and the second reflector bracket (92); the first reflector bracket (91) and the second reflector bracket (92) are both arranged inside the large end of the second shell (82) and between the first base (203) and the second base (204); The SMA connector assembly (3) is arranged at the small end of the second housing (82); The semiconductor laser single tube (1) is arranged in the first mounting hole and the second mounting hole through a base (20).

9. The high-power and high-brightness semiconductor laser based on TO packaging according to claim 8, characterized in that: The first reflector bracket (91) and the second reflector bracket (92) are perpendicular to each other in space.

10. The high-power and high-brightness semiconductor laser based on TO packaging according to claim 9, characterized in that: Also includes a preformed solder sheet (10) and a mirror holder (202); The preformed solder sheet (10) is matched with the bottom end and the base (20) of the semiconductor laser tube (1), and is arranged between the semiconductor laser tube (1) and the base (20); the mirror holder (202) is matched with the laser output end of the semiconductor laser tube (1), and the mirror holder (202) is used to install the collimating mirror (5); The cladding (402) and the SMA body (31) are clearance fit, and the SMA body (31) and the sapphire ring (32) are interference fit; The collimator (5), beam combiner (6) and coupling mirror (7) are all made of glass; the base (20) is a metal base; the collimator (5) and the base (20) are fixed by gluing; The preformed welding sheet (10) is welded to the bottom end of the semiconductor laser single tube (1); the semiconductor laser single tube (1) is positioned with the base (20) via a top screw (201); The semiconductor laser single tube (1) is coaxially clearance-matched with the first mounting hole and the second mounting hole.

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