Mesh structure, touch structure, display panel in electronic device, method for improving light transmittance of display panel, and manufacturing method of mesh structure

Abstract

A grid structure is provided. The grid structure includes a first insulating layer; one or more grid lines on a first side of the first insulating layer; and one or more protruding structures on a second side of the first insulating layer, the second side being opposite the first side. A respective protruding structure has a footprint on a projection plane containing a surface of the first insulating layer that at least partially overlaps a footprint of a respective grid line on the projection plane. The one or more protruding structures have a refractive index that is greater than a refractive index of the first insulating layer.

Description

Technical Field

[0001] This invention relates to the field of display technology, and more specifically, to a grid structure, a touch structure, a display panel, a method for improving the light transmittance of a display panel, and a method for manufacturing a grid structure in an electronic device. Background Technology

[0002] Mesh structures can be made from a variety of materials, including metals, alloys, carbon nanotubes, and graphene. Mesh structures are highly conductive and can be made ultrathin. Therefore, they are widely used in electronic devices such as wearable devices, foldable devices, and ultrathin devices. Summary of the Invention

[0003] In one aspect, this disclosure provides a mesh structure comprising: a first insulating layer; one or more mesh lines located on a first side of the first insulating layer; and one or more protruding structures located on a second side of the first insulating layer, the second side being opposite to the first side; wherein the orthographic projection of a corresponding protruding structure onto a projection plane of a surface containing the first insulating layer at least partially overlaps with the orthographic projection of a corresponding mesh line onto the projection plane; and the refractive index of the one or more protruding structures is greater than the refractive index of the first insulating layer.

[0004] Optionally, the cross-sectional width of the cross section of the corresponding protruding structure along the longitudinal direction of the plane intersecting the corresponding protruding structure and the corresponding grid line and perpendicular to the corresponding grid line decreases from the first side to the second side along the protrusion direction.

[0005] Optionally, the first center line of the orthographic projection of the corresponding protruding structure on the projection plane and the second center line of the orthographic projection of the corresponding grid line on the projection plane are spaced apart from each other by a distance ranging from 0% to 75% of the line width of the corresponding grid line.

[0006] Optionally, the first center line of the orthographic projection of the corresponding protruding structure on the projection plane and the second center line of the orthographic projection of the corresponding grid line on the projection plane are spaced apart from each other by a distance ranging from 0% to 75% of the maximum value of the cross-sectional width.

[0007] Optionally, the first centerline and the second centerline are substantially parallel to the longitudinal direction.

[0008] Optionally, the maximum value of the cross-sectional width is in the range of 12.5% ​​to 150% of the thickness of the corresponding protruding structure along the protruding direction.

[0009] Optionally, the maximum value of the cross-sectional width is in the range of 75% to 125% of the thickness of the corresponding protruding structure along the protruding direction.

[0010] Optionally, the thickness of the corresponding protruding structure along the protruding direction is in the range of 25% to 175% of the maximum value of the cross-sectional width.

[0011] Optionally, the mesh structure further includes a second insulating layer in direct contact with the one or more protruding structures; wherein the difference between the refractive index of the second insulating layer and the refractive index of the one or more protruding structures is less than or equal to 0.2.

[0012] Optionally, the corresponding protruding structure has a continuously curved protruding surface.

[0013] Optionally, the corresponding protruding structure has a truncated elliptical shape.

[0014] Optionally, the one or more protruding structures include an optically transparent material.

[0015] Optionally, the mesh structure further includes a second insulating layer in direct contact with the one or more protruding structures; and an optically transparent adhesive layer that bonds the first insulating layer and the second insulating layer together.

[0016] Optionally, the mesh structure further includes a second insulating layer in direct contact with the one or more protruding structures; wherein the second insulating layer is located between the one or more protruding structures and the first insulating layer.

[0017] Optionally, the mesh structure further includes a second insulating layer in direct contact with the one or more protruding structures; wherein the one or more protruding structures are located between the second insulating layer and the first insulating layer.

[0018] Optionally, the cross-sectional width of the cross section of the corresponding protruding structure along the longitudinal direction of the plane intersecting the corresponding protruding structure and the corresponding grid line and perpendicular to the corresponding grid line decreases from the second side to the first side along the protrusion direction.

[0019] Optionally, the one or more protruding structures include a plurality of protrusions; and the orthographic projection of a corresponding one of the plurality of protrusions on the projection plane at least partially overlaps with the orthographic projection of a portion of the one or more grid lines on the projection plane.

[0020] Optionally, the one or more protruding structures include continuous protruding ridges; and the orthographic projection of the continuous protruding ridges on the projection plane at least partially overlaps with the orthographic projection of the corresponding grid lines on the projection plane.

[0021] In another aspect, this disclosure provides an electronic device comprising a grid structure described herein or manufactured by the methods described herein, and a semiconductor component.

[0022] In another aspect, this disclosure provides a method for manufacturing a mesh structure, comprising: forming one or more mesh lines on a first side of a first insulating layer; and forming one or more protruding structures on a second side of the first insulating layer, the second side being opposite to the first side; wherein the orthographic projection of a corresponding protruding structure onto a projection plane containing the surface of the first insulating layer at least partially overlaps with the orthographic projection of a corresponding mesh line onto the projection plane; the refractive index of the one or more protruding structures is greater than the refractive index of the first insulating layer; and the cross-sectional width of a cross section of the corresponding protruding structure along a plane intersecting the longitudinal direction of the corresponding protruding structure and the corresponding mesh line and perpendicular to the longitudinal direction of the corresponding mesh line decreases from the first side to the second side along the protrusion direction. Attached Figure Description

[0023] The following figures are merely illustrative examples based on various disclosed embodiments and are not intended to limit the scope of the invention.

[0024] Figure 1A This is a perspective view of a portion of a mesh structure according to some embodiments of the present disclosure.

[0025] Figure 1B This is a plan view of a portion of a mesh structure according to some embodiments of the present disclosure.

[0026] Figure 1C It is along Figure 1B A cross-sectional view of line A-A' in the diagram.

[0027] Figure 1D This is a plan view of a portion of a mesh structure according to some embodiments of the present disclosure.

[0028] Figure 1E It is along Figure 1D A cross-sectional view of line B-B' in the diagram.

[0029] Figure 2 The correlation between light transmittance and the distance between the first and second center lines is shown.

[0030] Figure 3 The correlation between transmittance and the maximum cross-sectional width is shown.

[0031] Figure 4 The correlation between light transmittance and the thickness of the corresponding protruding structure along the protrusion direction is shown.

[0032] Figure 5The correlation between light transmittance and the refractive index of the second insulating layer is shown.

[0033] Figure 6 The correlation between light transmittance and the refractive index of the corresponding prominent structure is shown.

[0034] Figure 7 The correlation between light transmittance and the shape of the corresponding protruding structure is shown.

[0035] Figure 8 This is a cross-sectional view of a mesh structure according to some embodiments of the present disclosure.

[0036] Figure 9 The correlation between light transmittance and the location of the corresponding protruding structure is shown.

[0037] Figure 10 The correlation between light transmittance and the shape and location of the corresponding protruding structures is shown.

[0038] Figure 11 This is a perspective view of a portion of a mesh structure according to some embodiments of the present disclosure.

[0039] Figure 12A This is a schematic diagram illustrating one or more grid lines in a touch structure according to some embodiments of the present disclosure.

[0040] Figure 12B This is a schematic diagram illustrating one or more protruding structures in a touch structure according to some embodiments of the present disclosure.

[0041] Figure 12C This is a schematic diagram illustrating one or more grid lines and one or more protruding structures in a touch structure according to some embodiments of the present disclosure.

[0042] Figure 12D This is a schematic diagram illustrating a series of protruding ridges in a touch structure according to some embodiments of the present disclosure.

[0043] Figure 12E This is a schematic diagram illustrating one or more grid lines and one or more protruding structures in a touch structure according to some embodiments of the present disclosure.

[0044] Figure 13 A method for manufacturing a grid structure in an electronic device according to some embodiments of the present disclosure is shown.

[0045] Figure 14 A method for manufacturing a grid structure in an electronic device according to some embodiments of the present disclosure is shown.

[0046] Figure 15A method for manufacturing a grid structure in an electronic device according to some embodiments of the present disclosure is shown.

[0047] Figure 16 A method for manufacturing a grid structure in an electronic device according to some embodiments of the present disclosure is shown.

[0048] Figure 17 A method for manufacturing a grid structure in an electronic device according to some embodiments of the present disclosure is shown.

[0049] Figure 18 A method for manufacturing a grid structure in an electronic device according to some embodiments of the present disclosure is shown. Detailed Implementation

[0050] This disclosure will now be described in more detail with reference to the following embodiments. It should be noted that the following description of some embodiments presented herein is for illustrative and descriptive purposes only. It is not exhaustive or limited to the precise forms disclosed.

[0051] This disclosure provides, in particular, a mesh structure, an electronic device, and a method for manufacturing a mesh structure, which substantially avoids one or more problems caused by the limitations and disadvantages of the prior art. In one aspect, the mesh structure in the electronic device includes a first insulating layer; one or more mesh lines located on a first side of the first insulating layer; and one or more protruding structures located on a second side of the first insulating layer, opposite to the first side. Optionally, the orthographic projection of a corresponding protruding structure onto a projection plane containing the surface of the first insulating layer at least partially overlaps with the orthographic projection of a corresponding mesh line onto the same projection plane. Optionally, the refractive index of one or more protruding structures is greater than the refractive index of the first insulating layer.

[0052] The inventors of this disclosure have discovered, surprisingly and unexpectedly, that transmittance through one or more grid lines (e.g., in electronic devices) can be significantly increased by using a grid structure with a complex structure provided by this disclosure. In one example, transmittance through one or more grid lines can be increased by more than 10% (e.g., more than 12%, more than 14%, more than 16%). Furthermore, a significant increase in transmittance through one or more grid lines is observed across the entire visible spectrum.

[0053] Figure 1A This is a perspective view of a portion of a mesh structure according to some embodiments of this disclosure. Reference Figure 1A In some embodiments, the mesh structure includes a first insulating layer IN1; one or more mesh lines ML located on a first side S1 of the first insulating layer IN1; and one or more protruding structures PDS located on a second side S2 of the first insulating layer IN1, the second side S2 being opposite to the first side S1.

[0054] Figure 1B This is a plan view of a portion of a mesh structure according to some embodiments of this disclosure. (Refer to...) Figure 1A and Figure 1B In some embodiments, the orthographic projection of one or more protruding structures PDS onto the projection plane PP of the surface containing the first insulating layer IN1 at least partially overlaps with the orthographic projection of one or more grid lines ML onto the projection plane PP. Optionally, the orthographic projection of one or more grid lines ML onto the projection plane PP substantially (e.g., at least 75%, at least 80%, at least 85%, at least 90%, at least 95%, at least 99%, or 100%) covers the orthographic projection of one or more protruding structures PDS onto the projection plane PP. Optionally, the orthographic projection of one or more grid lines ML onto the projection plane PP completely covers the orthographic projection of one or more protruding structures PDS onto the projection plane PP.

[0055] Figure 1C It is along Figure 1B The cross-sectional view of line A-A' in the diagram. (Refer to...) Figure 1C In some embodiments, the orthographic projection of the corresponding protruding structure RPD onto the projection plane PP of the surface containing the first insulating layer IN1 at least partially overlaps with the orthographic projection of the corresponding grid line RML onto the projection plane PP. Optionally, the orthographic projection of the corresponding grid line RML onto the projection plane PP substantially (e.g., at least 75%, at least 80%, at least 85%, at least 90%, at least 95%, at least 99%, or 100%) covers the orthographic projection of the corresponding protruding structure RPD onto the projection plane PP. Optionally, the orthographic projection of the corresponding grid line RML onto the projection plane PP completely covers the orthographic projection of the corresponding protruding structure RPD onto the projection plane PP.

[0056] In some embodiments, the refractive index of one or more protruding structures is greater than the refractive index of the first insulating layer. Optionally, the refractive index of one or more protruding structures is at least 0.01 greater than the refractive index of the first insulating layer, for example, at least 0.02, at least 0.03, at least 0.04, at least 0.05, at least 0.06, at least 0.07, at least 0.08, at least 0.09, at least 0.10, at least 0.11, at least 0.12, at least 0.13, at least 0.14, at least 0.15, at least 0.16, at least 0.17, at least 0.18, or at least 0.20.

[0057] In some embodiments, reference Figure 1B and Figure 1CThe cross-sectional width csw of the plane ISP, which intersects the corresponding protruding structure RPD and the corresponding grid line RML and is perpendicular to the longitudinal direction Dlg of the corresponding grid line RML, decreases from the first side S1 to the second side S2 along the protruding direction Dpd.

[0058] Figure 1D This is a plan view of a portion of a mesh structure according to some embodiments of the present disclosure. Figure 1E It is along Figure 1D Cross-sectional view of line B-B' in the diagram. (Refer to...) Figure 1D and Figure 1E In some embodiments, the orthographic projection of the corresponding grid line RML onto the projection plane PP partially overlaps with the orthographic projection of the corresponding protruding structure RPD onto the projection plane PP. The first center line Pcl1 of the orthographic projection of the corresponding protruding structure RPD onto the projection plane PP and the second center line Pcl2 of the orthographic projection of the corresponding grid line RML onto the projection plane PP are separated by a distance d. Figure 1B and Figure 1C In the diagram, the first centerline and the second centerline overlap, and the distance d between them is zero. Figure 1D and Figure 1E In this case, the distance d is greater than zero, for example, the first center line Pcl1 and the second center line Pcl2 are offset from each other.

[0059] Optionally, the first centerline Pcl1 and the second centerline Pcl2 are substantially parallel to the longitudinal direction Dlg. As used herein, the term "substantially parallel" means an angle ranging from 0 degrees to approximately 45 degrees, for example, 0 degrees to approximately 5 degrees, 0 degrees to approximately 10 degrees, 0 degrees to approximately 15 degrees, 0 degrees to approximately 20 degrees, 0 degrees to approximately 25 degrees, or 0 degrees to approximately 30 degrees. Optionally, the first centerline Pcl1 and the second centerline Pcl2 are parallel to the longitudinal direction Dlg.

[0060] refer to Figure 1D and Figure 1E In some embodiments, the mesh structure further includes a second insulating layer IN2 that is in direct contact with one or more protruding structures (e.g., corresponding protruding structures RPD). Optionally, the mesh structure further includes an optically clear adhesive layer OCA that bonds the first insulating layer IN1 and the second insulating layer IN2 together.

[0061] In one example, the corresponding grid line RML has a linewidth lw of 4 μm and a thickness tml of 700 nm. The first insulating layer IN1 has a refractive index of 1.53. The optically transparent adhesive layer OCA has a refractive index of 1.6. The second insulating layer IN2 has a refractive index of 1.53. The cross-section of the corresponding protruding structure RPD along the plane ISP has a semi-elliptical shape, with a minor axis diameter (equal to the maximum value of the cross-sectional width csw) of 4 μm and a major axis radius (equal to the thickness tpd of the corresponding protruding structure RPD along the protrusion direction Dpd) of 4 μm. The corresponding protruding structure RPD has a refractive index of 1.65. Figure 2 The correlation between transmittance and the distance between the first and second center lines is shown. (Refer to...) Figure 2 Curve A represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when no one or more protrusions are present; Curve B represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protrusions are present and the distance d is zero; Curve C represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protrusions are present and the distance d is 1 μm; Curve D represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protrusions are present and the distance d is 2 μm; and Curve E represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protrusions are present and the distance d is 3 μm. Compared to the transmittance in curve A, the transmittance in curve B is significantly improved, for example, by 16% at a wavelength of approximately 0.56 μm.

[0062] The transmittance of curve E is lower than that of curve A. There are no one or more protruding structures in the grid structure, which indicates that the distance between the first center line Pcl1 and the second center line Pcl2 should be kept within a certain range to effectively improve the transmittance.

[0063] In some embodiments, the first center line Pcl1 of the orthographic projection of the corresponding protruding structure RPD onto the projection plane PP and the second center line Pcl2 of the orthographic projection of the corresponding grid line RML onto the projection plane PP are spaced apart by a distance ranging from 0% to 75% of the linewidth lw of the corresponding grid line RML (e.g., 0% to 5%, 5% to 10%, 10% to 15%, 15% to 20%, 20% to 25%, 25% to 30%, 30% to 35%, 35% to 40%, 40% to 45%, 45% to 50%, 50% to 55%, 55% to 60%, 60% to 65%, or 65% to 70%). Optionally, the first center line Pcl1 of the orthographic projection of the corresponding protruding structure RPD onto the projection plane PP and the second center line Pcl2 of the orthographic projection of the corresponding grid line RML onto the projection plane PP are spaced apart by a distance ranging from 0% to 5% of the linewidth lw of the corresponding grid line RML.

[0064] In some embodiments, the first center line Pcl1 of the orthographic projection of the corresponding protruding structure RPD onto the projection plane PP and the second center line Pcl2 of the orthographic projection of the corresponding grid line RML onto the projection plane PP are spaced apart by a distance ranging from 0% to 75% of the maximum value of the cross-sectional width csw (e.g., 0% to 5%, 5% to 10%, 10% to 15%, 15% to 20%, 20% to 25%, 25% to 30%, 30% to 35%, 35% to 40%, 40% to 45%, 45% to 50%, 50% to 55%, 55% to 60%, 60% to 65%, or 65% to 70%). Optionally, the first center line Pcl1 of the orthographic projection of the corresponding protruding structure RPD onto the projection plane PP and the second center line Pcl2 of the orthographic projection of the corresponding grid line RML onto the projection plane PP are spaced apart by a distance ranging from 0% to 5% of the maximum value of the cross-sectional width csw.

[0065] In some embodiments, the first center line Pcl1 of the orthographic projection of the corresponding protruding structure RPD on the projection plane PP and the second center line Pcl2 of the orthographic projection of the corresponding grid line RML on the projection plane PP are spaced apart by a distance not greater than 3.0 μm, for example, not greater than 2.5 μm, not greater than 2.0 μm, not greater than 1.5 μm, not greater than 1.0 μm, not greater than 0.5 μm, not greater than 0.4 μm, not greater than 0.3 μm, not greater than 0.2 μm or not greater than 0.1 μm.

[0066] In one example, the corresponding grid line RML has a linewidth lw of 4 μm and a thickness tml of 700 nm. The first insulating layer IN1 has a refractive index of 1.53. The optically transparent adhesive layer OCA has a refractive index of 1.6. The second insulating layer IN2 has a refractive index of 1.53. The corresponding protruding structure RPD has a semi-elliptical cross-section along the plane ISP, with a major axis radius (equal to the thickness tpd of the corresponding protruding structure RPD along the protrusion direction Dpd) of 4 μm. The corresponding protruding structure RPD has a refractive index of 1.65. Figure 3 This illustrates the correlation between light transmittance and the maximum cross-sectional width. (Refer to...) Figure 3 Curve A represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when no one or more protrusions are present; Curve B represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protrusions are present and the cross-section of the corresponding protrusion RPD along the plane ISP has a minor axis diameter of 4 μm (equal to the maximum value of the cross-sectional width csw); Curve C represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protrusions are present and the cross-section of the corresponding protrusion RPD along the plane ISP has a minor axis diameter of 3 μm; Curve D represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protrusions are present ...68 μm when one or more protrusions are present; Curve B represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when no one or more protrusions are present; Curve C represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when no one or more protrusions are present; Curve D represents the transmittance of the mesh structure for light with wavelengths in the range of 0.68 μm when no one or more protrusions are present; Curve B represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to When one or more protruding structures are present and the cross-section of the corresponding protruding structure RPD along the plane ISP has a minor axis diameter of 2 μm, the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm is given; Curve E represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protruding structures are present and the cross-section of the corresponding protruding structure RPD along the plane ISP has a minor axis diameter of 1 μm; and Curve F represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protruding structures are present and the cross-section of the corresponding protruding structure RPD along the plane ISP has a minor axis diameter of 0.5 μm.

[0067] like Figure 3 As shown, compared with a grid structure without one or more protruding structures (curve A), the light transmittance of a grid structure with one or more protruding structures can be enhanced at various values ​​of the minor axis diameter (e.g., from 0.5 μm to 4 μm; curves B to F).

[0068] In some embodiments, the maximum value of the cross-sectional width csw is in the range of 12.5% ​​to 150% of the thickness tpd of the corresponding protruding structure RPD along the protrusion direction Dpd (e.g., 12.5% ​​to 25.0%, 25.0% to 50.0%, 50.0% to 75.0%, 75.0% to 100.0%, 100.0% to 125.0%, or 125.0% to 150.0%). Optionally, the maximum value of the cross-sectional width csw is in the range of 75% to 125% of the thickness tpd of the corresponding protruding structure RPD along the protrusion direction Dpd (e.g., 75.0% to 100.0%, 100.0% to 125.0%).

[0069] In some embodiments, the maximum value of the cross-sectional width csw is in the range of 12.5% ​​to 150% of the linewidth lw of the corresponding grid line RML (e.g., 12.5% ​​to 25.0%, 25.0% to 50.0%, 50.0% to 75.0%, 75.0% to 100.0%, 100.0% to 125.0%, or 125.0% to 150.0%). Optionally, the maximum value of the cross-sectional width csw is in the range of 75% to 125% of the linewidth lw of the corresponding grid line RML (e.g., 75.0% to 100.0%, 100.0% to 125.0%).

[0070] In one example, the corresponding grid line RML has a linewidth lw of 4 μm and a thickness tml of 700 nm. The first insulating layer IN1 has a refractive index of 1.53. The optically clear adhesive layer OCA has a refractive index of 1.6. The second insulating layer IN2 has a refractive index of 1.53. The cross-section of the corresponding protruding structure RPD along the plane ISP has a semi-elliptical shape with a minor axis radius (equal to the maximum value of the cross-sectional width csw) of 4 μm. The corresponding protruding structure RPD has a refractive index of 1.65. Figure 4 The correlation between light transmittance and the thickness of the corresponding protruding structure along the protrusion direction is shown. (Refer to...) Figure 4Curve A represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when no one or more protrusions are present; Curve B represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protrusions are present and the cross-section of the corresponding protrusion RPD along the plane ISP has a major axis radius of 4 μm (equal to the thickness tpd of the corresponding protrusion RPD along the protrusion direction Dpd); Curve C represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protrusions are present and the cross-section of the corresponding protrusion RPD along the plane ISP has a major axis radius of 3 μm; Curve D... Curve E represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protruding structures are present and the cross-section of the corresponding protruding structure RPD along the plane ISP has a major axis radius of 2 μm; Curve F represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protruding structures are present and the cross-section of the corresponding protruding structure RPD along the plane ISP has a major axis radius of 1 μm; and Curve F represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protruding structures are present and the cross-section of the corresponding protruding structure RPD along the plane ISP has a major axis radius of 0.5 μm.

[0071] The transmittance in curve E is lower than that in curve A. In this case, there are no one or more protruding structures in the grid structure. This indicates that the major axis radius of the semi-ellipse (equal to the thickness tpd of the corresponding protruding structure RPD along the protruding direction Dpd) should be kept within a certain range to effectively improve the transmittance.

[0072] In some embodiments, the thickness of the corresponding protruding structure RPD along the protrusion direction Dpd is in the range of 25% to 175% of the maximum value of the cross-sectional width csw (e.g., 25.0% to 50.0%, 50.0% to 75.0%, 75.0% to 100.0%, 100.0% to 125.0%, 125.0% to 150.0%, or 150.0% to 175.0%). Optionally, the thickness of the corresponding protruding structure RPD along the protrusion direction Dpd is in the range of 75% to 125% of the maximum value of the cross-sectional width csw (e.g., 75.0% to 100.0%, 100.0% to 125.0%).

[0073] In some embodiments, the thickness of the corresponding protruding structure RPD along the protrusion direction Dpd is in the range of 25% to 175% of the linewidth lw of the corresponding grid line RML (e.g., 25.0% to 50.0%, 50.0% to 75.0%, 75.0% to 100.0%, 100.0% to 125.0%, 125.0% to 150.0%, or 150.0% to 175.0%). Optionally, the thickness of the corresponding protruding structure RPD along the protrusion direction Dpd is in the range of 75% to 125% of the linewidth lw of the corresponding grid line RML (e.g., 75.0% to 100.0%, 100.0% to 125.0%).

[0074] refer to Figure 1D and Figure 1E In some embodiments, the mesh structure further includes a second insulating layer IN2 that is in direct contact with one or more protruding structures (e.g., corresponding protruding structures RPD). Optionally, the mesh structure further includes an optically clear adhesive layer OCA that bonds the first insulating layer IN1 and the second insulating layer IN2 together.

[0075] In one example, the corresponding grid line RML has a linewidth lw of 4 μm and a thickness tml of 700 nm. The first insulating layer IN1 has a refractive index of 1.53. The optically transparent adhesive layer OCA has a refractive index of 1.6. The cross-section of the corresponding protruding structure RPD along the plane ISP has a semi-elliptical shape, with a minor axis diameter (equal to the maximum value of the cross-sectional width csw) of 4 μm and a major axis radius (equal to the thickness tpd of the corresponding protruding structure RPD along the protrusion direction Dpd) of 4 μm. The corresponding protruding structure RPD has a refractive index of 1.65. The distance between the first center line Pcl1 of the orthographic projection of the corresponding protruding structure RPD onto the projection plane PP and the second center line Pcl2 of the orthographic projection of the corresponding grid line RML onto the projection plane PP is zero. Figure 5 The correlation between light transmittance and the refractive index of the second insulating layer is shown. (Refer to...) Figure 5Curve A represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protruding structures are absent; Curve B represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protruding structures are present and the second insulating layer IN2 is made of a cyclic olefin copolymer material with a refractive index of 1.53; Curve C represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protruding structures are present and the second insulating layer is made of silicon dioxide with a refractive index of 1.45; and Curve D represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protruding structures are present and the second insulating layer IN2 is made of silicon nitride with a refractive index of 2.0.

[0076] like Figure 5 As shown, when the refractive index of the second insulating layer IN2 is similar to that of the corresponding protruding structure RPD (e.g., curves B and C), the transmittance of the grid structure can be significantly improved compared to a grid structure without one or more protruding structures. When the difference between the refractive index of the second insulating layer IN2 and the refractive index of the corresponding protruding structure RPD exceeds a certain value (e.g., curve D), the transmittance of the grid structure follows the same trend across the wavelength range, but with a stronger resonance exhibiting oscillating peaks. This phenomenon is caused by a stronger Fabry-Perot cavity cutoff effect resulting from the large difference between the refractive index of the second insulating layer IN2 and the refractive index of the corresponding protruding structure RPD.

[0077] In one example, the corresponding grid line RML has a linewidth lw of 4 μm and a thickness tml of 700 nm. The first insulating layer IN1 has a refractive index of 1.53. The second insulating layer IN2 has a refractive index of 1.53. The optically transparent adhesive layer OCA has a refractive index of 1.6. The cross-section of the corresponding protruding structure RPD along the plane ISP has a semi-elliptical shape, with a minor axis diameter (equal to the maximum value of the cross-sectional width csw) of 4 μm and a major axis radius (equal to the thickness tpd of the corresponding protruding structure RPD along the protrusion direction Dpd) of 4 μm. The distance between the first center line Pcl1 of the orthographic projection of the corresponding protruding structure RPD on the projection plane PP and the second center line Pcl2 of the orthographic projection of the corresponding grid line RML on the projection plane PP is zero. Figure 6 The correlation between light transmittance and the refractive index of the corresponding protruding structure is shown. (Refer to...) Figure 6Curve A represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protruding structures are absent; Curve B represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protruding structures are present and the corresponding protruding structure RPD has a refractive index of 1.65; Curve C represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protruding structures are present and the corresponding protruding structure RPD is made of silicon nitride with a refractive index of 2.0.

[0078] like Figure 6 As shown, when the refractive index of the corresponding protruding structure RPD is similar to that of the second insulating layer IN2 (e.g., curve B), the transmittance of the grid structure can be significantly improved compared to a grid structure in which one or more protruding structures are absent. When the difference between the refractive index of the corresponding protruding structure RPD and the refractive index of the second insulating layer IN2 exceeds a certain value (e.g., curve C), the transmittance of the grid structure follows the same trend across the wavelength range, but exhibits a stronger resonance with oscillating peaks. This phenomenon is caused by a stronger Fabry-Perot cavity cutoff effect resulting from the large difference between the refractive index of the second insulating layer IN2 and the refractive index of the corresponding protruding structure RPD.

[0079] In some embodiments, the difference between the refractive index of the second insulating layer and the refractive index of one or more protruding structures is less than or equal to 0.2, for example, less than 0.15, less than 0.10, or less than 0.05.

[0080] This disclosure allows for the implementation of various suitable shapes for the corresponding protruding structure RPD. Examples of suitable shapes include truncated elliptical shapes, truncated conical shapes, truncated pyramidal shapes, pyramidal shapes, polygonal pyramidal shapes, lenticular shapes, conical shapes, polygonal conical shapes, hemispherical shapes, etc. Optionally, the corresponding protruding structure RPD has a truncated elliptical shape, such as a semi-elliptical shape. The corresponding protruding structure RPD can have various suitable shapes along the cross-section of the plane ISP, including truncated elliptical shapes (e.g., semi-elliptical shapes), trapezoidal shapes, and truncated circular shapes (e.g., semicircular shapes).

[0081] In one example, the corresponding grid line RML has a linewidth of 4 μm (lw) and a thickness of 700 nm (tml).

[0082] The first insulating layer IN1 has a refractive index of 1.53. The optically transparent adhesive layer OCA has a refractive index of 1.6.

[0083] The second insulating layer IN2 has a refractive index of 1.53. The corresponding protruding structure RPD has a refractive index of 1.65. The distance between the first center line Pcl1 of the orthographic projection of the corresponding protruding structure RPD on the projection plane PP and the second center line Pcl2 of the orthographic projection of the corresponding grid line RML on the projection plane PP is zero. Figure 7 The correlation between light transmittance and the shape of the corresponding protruding RPD structure is shown. (Refer to...) Figure 7 Curve A represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when no one or more protruding structures are present; Curve B represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protruding structures are present and the corresponding protruding structure RPD has a truncated elliptical shape and the cross-section of the corresponding protruding structure RPD along the plane ISP has a semi-elliptical shape (where the minor axis diameter (equal to the maximum value of the cross-sectional width csw) is 4 μm and the major axis radius (equal to the thickness tpd of the corresponding protruding structure RPD along the protrusion direction Dpd) is 4 μm); Curve C ...). The transmittance of the grid structure for light with wavelengths in the range of 0.40 μm to 0.68 μm is given by the following formula: PD has a truncated pyramidal shape (where the maximum value of the cross-sectional width csw is 4 μm, the thickness tpd of the corresponding protruding structure RPD along the protrusion direction Dpd is 1 μm, and the minimum value of the cross-sectional width is 1 μm); Curve D represents the transmittance of the grid structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protruding structures are present and the corresponding protruding structure RPD has a pyramidal shape (where the maximum value of the cross-sectional width csw is 4 μm, the thickness tpd of the corresponding protruding structure RPD along the protrusion direction Dpd is 1 μm, and the minimum value of the cross-sectional width is 0 μm).

[0084] like Figure 7 As shown, when the corresponding protruding structure RPD has a truncated elliptical shape, the light transmittance of the grid structure can be significantly improved compared to a grid structure without one or more protruding structures. When the corresponding protruding structure RPD has a shape other than a truncated elliptical shape, the light transmittance of the grid structure can still be enhanced, but with a stronger resonance and oscillating peak. This phenomenon is caused by a stronger Fabry-Perot cavity truncation effect due to discontinuous smooth transitions of the surface (e.g., discontinuous smooth bending). For example, a truncated pyramidal shape or a pyramidal shape surface includes multiple side surfaces. Adjacent side surfaces form edges that separate two adjacent side surfaces. Therefore, in a truncated pyramidal shape or a pyramidal shape, the curvature of the shape undergoes an abrupt change in at least one region of the surface.

[0085] In some embodiments, the corresponding protruding structure RPD has a continuously curved protruding surface. Optionally, the corresponding protruding structure RPD has a continuously smooth curved protruding surface, such as a parabola. Optionally, the curvature of the continuously smooth curved protruding surface is constant, or undergoes only a gradual change across the entire surface.

[0086] refer to Figure 1E In some embodiments, the second insulating layer IN2 is located between one or more protruding structures (e.g., including a corresponding protruding structure RPD) and the first insulating layer IN1.

[0087] Figure 8 This is a cross-sectional view of a mesh structure according to some embodiments of this disclosure. Reference Figure 8 In some embodiments, one or more protruding structures (e.g., including a corresponding protruding structure RPD) are located between the second insulating layer IN2 and the first insulating layer IN1. In some embodiments, reference is made to... Figure 1B and Figure 8 The cross-sectional width csw of the plane ISP, which intersects the corresponding protruding structure RPD and the corresponding grid line RML and is perpendicular to the longitudinal direction Dlg of the corresponding grid line RML, decreases from the second side S2 to the first side S1 along the protruding direction Dpd.

[0088] In one example, the corresponding grid line RML has a linewidth lw of 4 μm and a thickness tml of 700 nm. The first insulating layer IN1 has a refractive index of 1.53. The optically transparent adhesive layer OCA has a refractive index of 1.6. The second insulating layer IN2 has a refractive index of 1.53. The cross-section of the corresponding protruding structure RPD along the plane ISP has a semi-elliptical shape, with a minor axis diameter (equal to the maximum value of the cross-sectional width csw) of 4 μm and a major axis radius (equal to the thickness tpd of the corresponding protruding structure RPD along the protrusion direction Dpd) of 4 μm. The corresponding protruding structure RPD has a refractive index of 1.65. The distance between the first center line Pcl1 of the orthographic projection of the corresponding protruding structure RPD on the projection plane PP and the second center line Pcl2 of the orthographic projection of the corresponding grid line RML on the projection plane PP is zero. Figure 9 The correlation between light transmittance and the location of the corresponding protruding structure is shown. (Refer to...) Figure 9Curve A represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protrusions are absent; Curve B represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protrusions are present and the second insulating layer IN2 is between one or more protrusions (e.g., including corresponding protrusion RPDs) and the first insulating layer IN1; and Curve C represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when one or more protrusions are present and one or more protrusions (e.g., including corresponding protrusion RPDs) are between the second insulating layer IN2 and the first insulating layer IN1. (Reference) Figure 9 Compared to a grid structure in which there are no protruding structures, the light transmittance of a grid structure can be significantly improved when there are one or more protruding structures and the second insulating layer IN2 is between one or more protruding structures and the first insulating layer IN1, or when one or more protruding structures are between the second insulating layer IN2 and the first insulating layer IN1.

[0089] In one example, the corresponding grid line RML has a linewidth of 4 μm (lw) and a thickness of 700 nm (tml).

[0090] The first insulating layer IN1 has a refractive index of 1.53. The optically transparent adhesive layer OCA has a refractive index of 1.6.

[0091] The second insulating layer IN2 has a refractive index of 1.53. The corresponding protruding structure RPD has a refractive index of 1.65. The distance between the first center line Pcl1 of the orthographic projection of the corresponding protruding structure RPD on the projection plane PP and the second center line Pcl2 of the orthographic projection of the corresponding grid line RML on the projection plane PP is zero. Figure 10 The correlation between light transmittance and the shape and location of the corresponding protruding structures is shown. (Refer to...) Figure 10Curve A represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when there are no one or more protruding structures; Curve B represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm when there are one or more protruding structures, the corresponding protruding structure RPD has a truncated elliptical shape and the cross section of the corresponding protruding structure RPD along the plane ISP has a semi-elliptical shape (its minor axis diameter (equal to the maximum value of the cross section width csw) is 4 μm, the major axis radius (equal to the thickness tpd of the corresponding protruding structure RPD along the protrusion direction Dpd) is 4 μm), and the second insulating layer IN2 is between one or more protruding structures and the first insulating layer IN1. Curve C represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm under the following conditions: one or more protruding structures are present and the corresponding protruding structure RPD has a truncated pyramidal shape (the maximum cross-sectional width csw is 4 μm, the thickness tpd of the corresponding protruding structure RPD along the protrusion direction Dpd is 1 μm, and the minimum cross-sectional width is 1 μm), and the one or more protruding structures are located between the second insulating layer IN2 and the first insulating layer IN1. Curve D represents the transmittance of the mesh structure for light with wavelengths in the range of 0.40 μm to 0.68 μm under the following conditions: one or more protruding structures are present and the corresponding protruding structure RPD has a pyramidal shape (the maximum cross-sectional width csw is 4 μm, the thickness tpd of the corresponding protruding structure RPD along the protrusion direction Dpd is 1 μm, and the minimum cross-sectional width is 0 μm), and the one or more protruding structures are located between the second insulating layer IN2 and the first insulating layer IN1.

[0092] like Figure 10 As shown, when the corresponding protruding structure RPD has a truncated elliptical shape, the light transmittance of the grid structure can be significantly improved compared to a grid structure without one or more protruding structures. When the corresponding protruding structure RPD has a shape other than a truncated elliptical shape, the light transmittance of the grid structure can still be enhanced, but with a stronger resonance and oscillating peak. This phenomenon is caused by a stronger Fabry-Perot cavity truncation effect due to discontinuous smooth transitions of the surface (e.g., discontinuous smooth bending). For example, a truncated pyramidal shape or a pyramidal shape surface includes multiple side surfaces. Adjacent side surfaces form edges that separate two adjacent side surfaces. Therefore, in a truncated pyramidal shape or a pyramidal shape, the curvature of the shape undergoes an abrupt change in at least one region of the surface.

[0093] Reference Figure 1A and Figure 1BIn some embodiments, one or more protruding structures PDS include a plurality of protrusions spaced apart from each other. The orthographic projection of a corresponding one of the plurality of protrusions on the projection plane PP at least partially overlaps with the orthographic projection of a portion of one or more grid lines ML on the projection plane PP.

[0094] Figure 11 This is a perspective view of a portion of a mesh structure according to some embodiments of this disclosure. (Refer to...) Figure 11 In some embodiments, one or more protruding structures PDS include continuous protruding ridges CPR. The orthographic projection of the continuous protruding ridges CPR onto the projection plane PP at least partially overlaps with the orthographic projection of the corresponding grid lines RML onto the projection plane PP.

[0095] In another aspect, this disclosure provides an electronic device. This electronic device includes a mesh structure described herein or manufactured using the methods described herein, as well as semiconductor components. Examples of suitable electronic devices include, but are not limited to, touch structures, display devices, computers, tablet computers, media players, cellular phones, gaming devices, televisions, and monitors.

[0096] In another aspect, this disclosure provides a touch structure. The touch structure includes a mesh structure described herein or manufactured using the methods described herein. In some embodiments, one or more mesh lines are one or more mesh lines of a touch electrode of the touch structure.

[0097] Figure 12A This is a schematic diagram illustrating one or more grid lines in a touch structure according to some embodiments of the present disclosure. Figure 12B This is a schematic diagram illustrating one or more protruding structures in a touch structure according to some embodiments of the present disclosure. Figure 12C This is a schematic diagram illustrating one or more grid lines and one or more protruding structures in a touch structure according to some embodiments of the present disclosure. (Refer to...) Figures 12A to 12C In some embodiments, one or more protruding structures PDS include multiple protrusions. The multiple protrusions are arranged in an array. For example... Figure 12C As shown, the orthographic projection of the corresponding protruding structure on the substrate at least partially overlaps with the orthographic projection of a portion of one or more grid lines ML on the substrate.

[0098] Figure 12D This is a schematic diagram illustrating a series of protruding ridges in a touch structure according to some embodiments of the present disclosure. Figure 12E This is a schematic diagram illustrating one or more grid lines and one or more protruding structures in a touch structure according to some embodiments of the present disclosure. Reference Figure 12A and Figures 12D to 12E In some embodiments, one or more protruding structures include a continuous protruding ridge CPR. For example... Figure 12E As shown, the orthographic projection of the continuous protruding ridge CPR on the substrate at least partially overlaps with the orthographic projection of the corresponding grid line RML on the substrate.

[0099] In another aspect, this disclosure provides a display panel. In some embodiments, the display panel includes a light-emitting element; and a grid structure described herein or manufactured by methods thereof. One or more grid lines are located on the side of one or more protruding structures away from the light-emitting element. As described above, the grid structure provided by this disclosure significantly enhances the light transmittance of the display panel.

[0100] In another aspect, this disclosure provides a display device. In some embodiments, the display device includes a display panel having a grid structure described herein or a grid structure manufactured by the methods described herein; and an integrated circuit connected to the display panel. Examples of suitable display devices include, but are not limited to, electronic paper, mobile phones, tablet computers, televisions, monitors, laptop computers, digital photo albums, GPS, etc. Optionally, the display device is an organic light-emitting diode (OLED) display device. Optionally, the display device is a liquid crystal display (LCD) device.

[0101] In another aspect, this disclosure provides a method for enhancing the light transmittance in a display panel having a grid structure including one or more grid lines. In some embodiments, the method for enhancing light transmittance includes providing one or more grid lines on a first side of a first insulating layer; providing one or more protruding structures on a second side of the first insulating layer, the second side opposite to the first side; and diffracting light emitted from a light-emitting element of the display panel through the one or more protruding structures to enhance the light transmittance of the display panel. Optionally, the orthographic projection of a corresponding protruding structure onto a projection plane including the surface of the first insulating layer at least partially overlaps with the orthographic projection of a corresponding grid line onto the projection plane. Optionally, the refractive index of the one or more protruding structures is greater than the refractive index of the first insulating layer. Optionally, the cross-sectional width of a section of the corresponding protruding structure along a plane intersecting the longitudinal direction of the corresponding protruding structure and the corresponding grid line and perpendicular to the longitudinal direction of the corresponding grid line decreases from the first side to the second side along the protrusion direction.

[0102] In another aspect, this disclosure provides a method for manufacturing a mesh structure. In some embodiments, the method includes: forming one or more mesh lines on a first side of a first insulating layer; and forming one or more protruding structures on a second side of the first insulating layer, the second side opposite to the first side. Optionally, the orthographic projection of a corresponding protruding structure onto a projection plane containing the surface of the first insulating layer at least partially overlaps with the orthographic projection of a corresponding mesh line onto the same projection plane. Optionally, the refractive index of the one or more protruding structures is greater than the refractive index of the first insulating layer. Optionally, the cross-sectional width of a section of the corresponding protruding structure along a plane intersecting the longitudinal direction of the corresponding protruding structure and the corresponding mesh line and perpendicular to the longitudinal direction of the corresponding mesh line decreases from the first side to the second side along the protrusion direction.

[0103] Optionally, the first center line of the orthographic projection of the corresponding protruding structure on the projection plane and the second center line of the orthographic projection of the corresponding grid line on the projection plane are spaced apart from each other by a distance ranging from 0% to 75% of the line width of the corresponding grid line.

[0104] Optionally, the first center line of the orthographic projection of the corresponding protruding structure on the projection plane and the second center line of the orthographic projection of the corresponding grid line on the projection plane are spaced apart from each other by a distance ranging from 0% to 75% of the maximum value of the cross-sectional width.

[0105] Optionally, the first centerline and the second centerline are substantially parallel to the longitudinal direction.

[0106] Optionally, the maximum value of the cross-sectional width is in the range of 12.5% ​​to 150% of the thickness of the corresponding protruding structure along the protruding direction.

[0107] Optionally, the maximum value of the cross-sectional width is in the range of 75% to 125% of the thickness of the corresponding protruding structure along the protruding direction.

[0108] Optionally, the thickness of the corresponding protruding structure along the protruding direction is in the range of 25% to 175% of the maximum value of the cross-sectional width.

[0109] In some embodiments, the method further includes forming a second insulating layer. The second insulating layer is formed to be in direct contact with one or more protruding structures. Optionally, the difference between the refractive index of the second insulating layer and the refractive index of the one or more protruding structures is less than or equal to 0.2.

[0110] Optionally, the corresponding protruding structure is formed as a protruding surface with continuous curvature. Alternatively, the corresponding protruding structure is formed as a protruding surface with continuous smooth curvature.

[0111] Optionally, the corresponding protruding structure has a truncated elliptical shape.

[0112] Alternatively, one or more protruding structures may be formed using optically transparent materials.

[0113] In some embodiments, the method further includes forming a second insulating layer and forming an optically transparent adhesive layer. The second insulating layer is formed to be in direct contact with one or more protruding structures. The optically transparent adhesive layer is formed to bond the first and second insulating layers together.

[0114] Optionally, the second insulating layer is formed between the one or more protruding structures and the first insulating layer.

[0115] Optionally, the one or more protruding structures are formed between the second insulating layer and the first insulating layer.

[0116] In some embodiments, forming one or more protruding structures includes forming a plurality of protrusions. Optionally, the orthographic projection of a corresponding one of the plurality of protrusions on the projection plane at least partially overlaps with the orthographic projection of a portion of one or more grid lines on the projection plane.

[0117] In some embodiments, forming one or more protruding structures includes forming continuous protruding ridges. Optionally, the orthographic projection of the continuous protruding ridges on the projection plane at least partially overlaps with the orthographic projection of the corresponding grid lines on the projection plane.

[0118] Figure 13 A method for manufacturing a grid structure in an electronic device according to some embodiments of the present disclosure is illustrated. Reference Figure 13In some embodiments, forming one or more protruding structures includes forming a template MP having a plurality of first microcavities MC1 having the same pattern as a plurality of protrusions of one or more protruding structures. In some embodiments, forming a template includes forming (e.g., spin-coating) a second photoresist layer PS2 on an etchable substrate EBS; exposing (e.g., electron beam lithography) and developing the second photoresist layer PS2 to form a pattern; etching (e.g., by deep reactive ion etching) the etchable substrate EBS to form a plurality of microcavities MC in the etchable substrate EBS, the plurality of microcavities MC having the same pattern as a plurality of protrusions of one or more protrusion structures; placing a fusible substrate (e.g., a glass substrate) on the etchable substrate EBS to cover the plurality of microcavities MC; forming a fused substrate FS having a plurality of first protrusions PD1 by thermally fusing (optionally using a thermal reflow process) the fusible substrate to cause the fusible material of the fusible substrate to protrude into the plurality of microcavities MC; separating the fused substrate FS from the etchable substrate EBS; forming a flexible polymer material layer FML on the fused substrate FS, which is in direct contact with the plurality of first protrusions PD1; and separating the flexible polymer material layer FML from the fused substrate FS to form a template MP having a plurality of first microcavities MC1. The method further includes forming a first photoresist layer PS1 on a template MP, wherein the photoresist material of the first photoresist layer PS1 fills a plurality of first microcavities MC1; bonding a substrate BS to the first photoresist layer PS1 on the side of the first photoresist layer PS1 away from the template MP; and separating the template MP from the first photoresist layer PS1 to form one or more protruding structures PDS including a plurality of protrusions PD.

[0119] Figure 13 The example shown is particularly suitable for forming one or more protruding structures on a substrate that is not highly heat-resistant (e.g., a substrate made of an organic material such as a polymer material).

[0120] Figure 14 A method for manufacturing a grid structure in an electronic device according to some embodiments of the present disclosure is shown. Figure 15 A method for manufacturing a grid structure in an electronic device according to some embodiments of the present disclosure is illustrated. Reference Figure 14 and Figure 15In some embodiments, forming one or more protruding structures includes forming (e.g., spin-coating) a photoresist layer PS on a substrate BS; exposing (e.g., electron beam lithography) and developing the photoresist layer PS to form a plurality of first protrusions PD1 comprising photoresist material on the substrate BS, the plurality of first protrusions PD1 having the same pattern as a plurality of protrusions of the one or more protruding structures; and heating the plurality of first protrusions PD1 after cooling the plurality of first protrusions PD1 to change the shape of the plurality of first protrusions PD1, thereby forming a plurality of protrusions PD of the one or more protruding structures.

[0121] exist Figure 14 During the heating and cooling process, multiple first protrusions PD1 remain on top of the substrate BS. Figure 14 The example shown is particularly suitable for forming one or more protruding structures with relatively small thickness. Figure 15 During the heating and cooling process, the substrate BS is flipped upside down, with multiple first protrusions PD1 facing downwards. Under the influence of gravity, the multiple first protrusions PD1 are elongated, thereby forming one or more protruding structures with a relatively large thickness.

[0122] Figure 14 and Figure 15 The example shown is particularly suitable for forming one or more protruding structures on a highly heat-resistant substrate (e.g., a substrate made of an inorganic material such as silica or a heat-resistant organic material).

[0123] Figure 16 A method for manufacturing a grid structure in an electronic device according to some embodiments of the present disclosure is illustrated. Reference Figure 16 In some embodiments, forming one or more protruding structures includes forming (e.g., by plasma-enhanced chemical vapor deposition) a dielectric material layer DML on a substrate BS; forming (e.g., by spin coating) a photoresist layer PS on the side of the dielectric material layer DML away from the substrate BS; exposing (e.g., by electron beam lithography) and developing the photoresist layer PS; and etching (e.g., by inductively coupled plasma etching) the dielectric material layer DML to form a plurality of protrusions PD of one or more protruding structures.

[0124] Figure 16 The examples shown are particularly suitable for forming one or more protruding structures made of rigid materials, and particularly suitable for forming one or more protruding structures including a truncated conical shape or a truncated pyramidal shape.

[0125] Figure 17 A method for manufacturing a grid structure in an electronic device according to some embodiments of the present disclosure is illustrated. Reference Figure 17In some embodiments, forming one or more protruding structures includes forming (e.g., by spin coating) a first photoresist layer PS1 on a substrate BS; forming (e.g., by spin coating) a second photoresist layer PS2 on the side of the first photoresist layer PS1 away from the substrate BS; forming (e.g., by sputtering) a release material layer LOM on the side of the second photoresist layer PS2 away from the first photoresist layer PS1; exposing (e.g., by electron beam lithography) and developing the first photoresist layer PS1 and the second photoresist layer PS2, exposing the first photoresist layer PS1 at a rate greater than the exposure rate of the second photoresist layer PS2, thereby forming a plurality of microcavities MC; depositing (e.g., by plasma-enhanced chemical vapor deposition) a dielectric material DM on the substrate BS, a portion of the dielectric material DM being deposited on the remaining release material layer RLO, a portion of the dielectric material DM being deposited in the plurality of microcavities MC; stripping the dielectric material deposited on the remaining release material layer RLO; and removing the remaining photoresist material, thereby forming a plurality of protrusions PD of one or more protruding structures.

[0126] Figure 17 The examples shown are particularly suitable for forming one or more protruding structures made of rigid materials, and particularly suitable for forming one or more protruding structures including corresponding protruding structures having a truncated conical shape or a truncated pyramidal shape. Specifically, according to Figure 17 The method shown can make the corresponding protruding structure have a large difference between the area of ​​the upper surface and the area of ​​the lower surface.

[0127] Figure 18 A method for manufacturing a grid structure in an electronic device according to some embodiments of the present disclosure is illustrated. Reference Figure 18 In some embodiments, forming one or more protruding structures includes forming (e.g., by plasma-enhanced chemical vapor deposition) a dielectric material layer DML on a substrate BS; forming (e.g., by spin coating) an embossing adhesive layer EBL on the side of the dielectric material layer DML away from the substrate BS; nanoimprinting the embossing adhesive layer to form a plurality of microcavities MC; removing (e.g., by inductively coupled plasma etching) the embossing adhesive material from the plurality of microcavities MC to form a remaining embossing adhesive material layer REB; and using the remaining embossing adhesive material layer REB as a mask to etch (e.g., by inductively coupled plasma etching) the dielectric material layer DML to form a plurality of protrusions PD of one or more protruding structures.

[0128] Figure 18The examples shown are particularly suitable for forming one or more protruding structures made of rigid materials, and particularly suitable for forming one or more protruding structures including a truncated conical shape or a truncated pyramidal shape. Figure 18 The manufacturing process shown is efficient and suitable for large-scale manufacturing.

[0129] Various suitable materials and manufacturing methods can be used to fabricate one or more mesh lines. For example, conductive materials can be deposited on a substrate using a plasma-enhanced chemical vapor deposition (PECVD) process. Examples of suitable metallic materials for fabricating one or more mesh lines include metallic materials such as aluminum, copper, silver, and gold; carbon nanotubes and graphene. Optionally, the mesh lines have a linewidth in the range of 2.0 μm to 6.0 μm, for example, 2.0 μm to 3.0 μm, 3.0 μm to 4.0 μm, 4.0 μm to 5.0 μm, or 5.0 μm to 6.0 μm. Optionally, the mesh lines have a linewidth of 4.0 μm.

[0130] Various suitable materials can be used to manufacture the first insulating layer. Examples of suitable metallic materials for manufacturing the first insulating layer include silicon dioxide, silicon nitride, cyclic olefin copolymers, polyimide, and polyethylene terephthalate.

[0131] Various suitable materials can be used to manufacture the second insulating layer. Examples of suitable metallic materials for manufacturing the first insulating layer include silicon dioxide, silicon nitride, cyclic olefin copolymers, polyimide, and polyethylene terephthalate.

[0132] Various suitable materials can be used to manufacture the second insulating layer. Examples of suitable metallic materials for manufacturing the second insulating layer include silicon dioxide, silicon nitride, cyclic olefin copolymers, polyimide, and polyethylene terephthalate.

[0133] Various suitable materials can be used to fabricate one or more protruding structures. Examples of suitable metallic materials for fabricating one or more protruding structures include silicon dioxide, silicon nitride, polydimethylsiloxane, polystyrene, and photoresist materials (e.g., SU-8 photoresist). Alternatively, one or more protruding structures may be formed using an optically transparent insulating material.

[0134] For illustrative and descriptive purposes, the foregoing description of embodiments of the invention has been provided. It is not exhaustive, nor is it intended to limit the invention to the precise forms or exemplary embodiments disclosed. Therefore, the foregoing description should be considered illustrative rather than restrictive. Clearly, many modifications and variations will be apparent to those skilled in the art. The embodiments were chosen and described to explain the principles of the invention and its best mode of practical application, thereby enabling those skilled in the art to understand the various embodiments of the invention and the various modifications suitable for the particular use or implementation contemplated. The scope of the invention is intended to be defined by the appended claims and their equivalents, wherein, unless otherwise stated, all terms are to be interpreted in their broadest reasonable sense. Therefore, the terms “the invention,” “the present invention,” etc., do not necessarily limit the scope of the claims to the specific embodiments, and references to exemplary embodiments of the invention do not imply limitation of the invention, nor should such limitation be inferred. The invention is defined only by the spirit and scope of the appended claims. Furthermore, these claims may involve the use of “first,” “second,” etc., followed by nouns or elements. These terms should be understood as nomenclature and should not be construed as limiting the number of elements modified by these nomenclatures unless a specific number has been given. Any advantages and benefits described may not apply to all embodiments of the invention. It should be understood that changes to the described embodiments can be made by those skilled in the art without departing from the scope of the invention as defined by the appended claims. Furthermore, the elements and components in this disclosure are not intended for public distribution, whether or not they are expressly recited in the appended claims.

Claims

1. A mesh structure, comprising: a first insulating layer; one or more mesh lines on a first side of the first insulating layer; and one or more protruding structures on a second side of the first insulating layer, the second side being opposite to the first side; wherein a footprint of a respective protruding structure on a projection plane containing a surface of the first insulating layer at least partially overlaps with a footprint of a respective mesh line on the projection plane; a first center line of the footprint of the respective protruding structure on the projection plane and a second center line of the footprint of the respective mesh line on the projection plane are spaced apart from each other by a distance in a range from 0% to 75% of a line width of the respective mesh line; and a refractive index of the one or more protruding structures is greater than a refractive index of the first insulating layer. a cross-sectional width of a cross-section of the respective protruding structure along a plane perpendicular to a longitudinal direction of the respective protruding structure and the respective mesh line at an intersection of the respective protruding structure and the respective mesh line decreases from the first side to the second side along a protruding direction.

2. The lattice structure of claim 1, wherein, the first center line of the footprint of the respective protruding structure on the projection plane and the second center line of the footprint of the respective mesh line on the projection plane are spaced apart from each other by a distance in a range from 0% to 75% of a maximum value of the cross-sectional width.

3. The lattice structure of claim 2, wherein, the first center line and the second center line are substantially parallel to the longitudinal direction.

4. The lattice structure of claim 2, wherein, the maximum value of the cross-sectional width is in a range from 12.5% to 150% of a thickness of the respective protruding structure along the protruding direction.

5. The lattice structure of claim 2, wherein, the maximum value of the cross-sectional width is in a range from 75% to 125% of the thickness of the respective protruding structure along the protruding direction.

6. The lattice structure of claim 5, wherein, the thickness of the respective protruding structure along the protruding direction is in a range from 25% to 175% of the maximum value of the cross-sectional width.

7. The lattice structure of claim 2, wherein, 8. The mesh structure of claim 1, further comprising a second insulating layer in direct contact with the one or more protruding structures; a difference between a refractive index of the second insulating layer and a refractive index of the one or more protruding structures is less than or equal to 0.

2. wherein the respective protruding structure has a continuously curved protruding surface.

9. The lattice structure of claim 1, wherein, the respective protruding structure has a truncated elliptical shape.

10. The lattice structure of claim 1, wherein, the one or more protruding structures comprise an optically transparent material.

11. The lattice structure of claim 1, wherein, 12. The mesh structure of claim 1, further comprising a second insulating layer in direct contact with the one or more protruding structures; and an optically transparent adhesive layer bonding the first insulating layer and the second insulating layer together.

13. The mesh structure of claim 1, further comprising a second insulating layer in direct contact with the one or more protruding structures; the second insulating layer is between the one or more protruding structures and the first insulating layer. wherein, 14. The mesh structure of claim 1, further comprising a second insulating layer in direct contact with the one or more protruding structures; the one or more protruding structures are between the second insulating layer and the first insulating layer. wherein ​ 15. The lattice structure of claim 14, wherein, a cross-sectional width of a cross-section of the respective protruding structure along a plane intersecting the respective protruding structure and the respective grid line and perpendicular to a longitudinal direction of the respective grid line decreases from the second side to the first side along the protruding direction.

16. The lattice structure of claim 1, wherein, the one or more protruding structures comprise a plurality of protrusions; and a footprint of a respective one of the plurality of protrusions on the projection plane at least partially overlaps with a footprint of a portion of the one or more grid lines on the projection plane.

17. The lattice structure of claim 1, wherein, the one or more protruding structures comprise a continuous protruding ridge; and a footprint of the continuous protruding ridge on the projection plane at least partially overlaps with a footprint of the respective grid line on the projection plane.

18. An electronic device comprising the grid structure and the semiconductor component according to any one of claims 1 to 17.

19. A method of manufacturing a grid structure, comprising: forming one or more grid lines on a first side of a first insulating layer; and forming one or more protruding structures on a second side of the first insulating layer, the second side being opposite to the first side; wherein a footprint of a respective protruding structure on a projection plane containing a surface of the first insulating layer at least partially overlaps with a footprint of a respective grid line on the projection plane; a first center line of the footprint of the respective protruding structure on the projection plane and a second center line of the footprint of the respective grid line on the projection plane are spaced apart from each other by a distance in a range of 0% to 75% of a line width of the respective grid line; a refractive index of the one or more protruding structures is greater than a refractive index of the first insulating layer; and a cross-sectional width of a cross-section of the respective protruding structure along a plane intersecting the respective protruding structure and the respective grid line and perpendicular to a longitudinal direction of the respective grid line decreases from the second side to the first side along the protruding direction.

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