Control device, control method, and program

Abstract

A control device that controls a supply condition of a gas supplied between two substrates that are mutually attached by a substrate attachment device controls the supply condition based on a measurement result measured with respect to at least one of a substrate, another substrate that is attached before the substrate is attached, and the substrate attachment device.

Description

Technical Field

[0001] The present invention relates to a control device, a control method, and a program. Background Art

[0002] The following technology is known: when one of two chips to be bonded to each other is placed on the other chip, a starting point of a bonding wave is given between the two chips, and the position of the starting point is detected by a position sensor, and multiple nozzles are used as a trigger to send airflow toward the starting point (for example, patent document 1).

[0003] Patent Document 1: Japanese Patent Application No. 2013-531395

[0004] However, the above-mentioned technology cannot effectively reduce the gap generated at the outer periphery between the two wafers. Summary of the Invention

[0005] In one embodiment of the present invention, a control device is provided for controlling supply conditions of gas supplied between two substrates bonded together by a substrate bonding apparatus. Alternatively, the control device controls the supply conditions based on measurement results of at least one of the substrates, another substrate bonded prior to bonding, and the substrate bonding apparatus.

[0006] The supply condition may be at least one of a supply flow rate, a supply pressure, a supply time, a supply direction, a humidity, a temperature of the gas toward the space between the substrates, and a discharge flow rate from the space between the substrates.

[0007] Alternatively, the measurement results may include at least any one of the shape of the thickness of the peripheral portion of the above-mentioned substrate, the shape of the warping of the peripheral portion of the above-mentioned substrate, the shape of the bonding wave generated between the above-mentioned substrates during the bonding process, the shape of the gap generated in the peripheral portion of the other bonded substrates, and the shape of the bonding between the other bonded substrates.

[0008] Alternatively, the gas may be supplied to at least any one of the portion with relatively smaller thickness and the portion with relatively larger warping amount in the peripheral portion of the substrate at a relatively larger supply flow rate, a relatively higher supply pressure and a relatively higher temperature.

[0009] The gas may be supplied toward at least one of a portion of the outer peripheral portion of the substrate where the thickness is relatively small and a portion where the warping amount is relatively large.

[0010] It can also be that at least any one of a relatively higher supply flow rate, a relatively higher supply pressure, and a relatively higher temperature is supplied to the portion of the bonding wave toward which the portion of the outer periphery of the substrate in the bonding process advances relatively faster.

[0011] It can also be that the gas is supplied toward the portion of the bonding wave toward which the portion of the outer periphery of the substrate in the bonding process advances relatively faster.

[0012] It can also be that at least any one of a relatively higher supply flow rate, a relatively higher supply pressure, and a relatively higher temperature is supplied to the substrate holding position in the substrate bonding apparatus corresponding to at least any one of the portion of the outer periphery of the other substrate to which the gap is relatively more generated and the portion from which the bonding is released.

[0013] It can also be that the gas is supplied toward the substrate holding position in the substrate bonding apparatus corresponding to at least any one of the portion of the outer periphery of the other substrate to which the gap is relatively more generated and the portion from which the bonding is released.

[0014] It can also be that the measurement result includes at least any one of the interval between the substrates in the bonding process and the relative position of the two holding portions in which the substrates are held in the bonding process.

[0015] It can also be that in at least any one of a case where the interval is equal to or greater than a prescribed size and a case where the relative position is separated by equal to or greater than a prescribed size, the gas is supplied to at least the center in the surface direction between the two substrates. It can also be that in at least any one of a case where the interval is less than a prescribed size and a case where the relative position is close by being less than a prescribed size, the gas is supplied to the periphery of the two substrates.

[0016] It can also be that in at least any one of a case where the interval is equal to or greater than a prescribed size and a case where the relative position is separated by equal to or greater than a prescribed size, the gas is supplied from the upstream side of an air current that flows unidirectionally from the side of the two substrates toward the two substrates.

[0017] It can also be that in at least any one of a case where the interval is less than a prescribed size and a case where the relative position is close by being less than a prescribed size, the gas is supplied from at least any one of above the two substrates or at least any one of below and the side of the two substrates toward the entire periphery of the two substrates.

[0018] Alternatively, the two holding parts holding the substrates to be bonded may be controlled so that after the substrates to be bonded face each other, the distance between the substrates held by the two holding parts is expanded before the gas is replaced with the atmosphere between the substrates to be bonded.

[0019] In one embodiment of the present invention, a control device is provided for controlling supply conditions of a gas supplied between two substrates bonded together by a substrate bonding apparatus. The control device may switch the supply conditions according to changes in the distance between the two substrates.

[0020] In one embodiment of the present invention, there is provided a substrate bonding apparatus including any one of the above-mentioned control devices.

[0021] In one embodiment of the present invention, a control method is provided for controlling supply conditions of gas supplied between two substrates bonded together by a substrate bonding apparatus. The control method includes a step of controlling the supply conditions based on measurement results of at least one of the substrates, another substrate bonded prior to bonding, and the substrate bonding apparatus.

[0022] In one embodiment of the present invention, a program is provided that, when executed by a computer, causes the computer to execute a control method for controlling supply conditions of a gas supplied between two substrates bonded together by a substrate bonding apparatus. The program includes a step of controlling the supply conditions based on measurement results of at least one of the substrates, another substrate bonded prior to bonding, and the substrate bonding apparatus.

[0023] The above invention summary does not list all the features required by the present invention. Subcombinations of these feature groups may also constitute inventions. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a schematic top view of the substrate bonding unit 10 .

[0025] Figure 2 This is a schematic cross-sectional view of the bonding unit 300 for explaining the operation of the bonding unit 300 before the gas control step.

[0026] Figure 3 This is a schematic cross-sectional view of the bonding unit 300 for explaining the operation of the bonding unit 300 before the gas control step.

[0027] Figure 4 This is a schematic cross-sectional view of the bonding unit 300 for explaining the operation of the bonding unit 300 before the gas control step.

[0028] Figure 5This diagram illustrates the expansion of the contact area and the relative shapes of the upper and lower wafers.

[0029] Figure 6 These are schematic explanatory diagrams for explaining examples (a) to (d) of the relationship between the peripheral sagging and warping of the substrate 230 and the interval between the substrates 210 and 230 on the peripheral side.

[0030] Figure 7 This is a schematic cross-sectional view of the bonding unit 300 for explaining the operation of the bonding unit 300 in the gas control step.

[0031] Figure 8 (A) is a schematic plan view and (B) is a schematic cross-sectional view for explaining a gas supply method achieved by the fixed piping portions 321 - 1A to 321 - 1D.

[0032] Figure 9 (A) is a schematic plan view and (B) is a schematic cross-sectional view for explaining a gas supply method achieved by the fixed piping portions 321 - 2A and 321 - 2B.

[0033] Figure 10 (A) is a schematic plan view and (B) is a schematic cross-sectional view for explaining a gas supply method achieved by the fixed piping portions 321 - 3A to 321 - 3D.

[0034] Figure 11 This is a schematic cross-sectional view of the bonding unit 300 for explaining the operation of the bonding unit 300 in the gas control step.

[0035] Figure 12 These are schematic plan views for explaining gas supply patterns (a) to (d) as examples when the distance between the substrates 210 and 230 is large during the bonding process.

[0036] Figure 13 These are schematic plan views for explaining gas supply patterns (a) and (b) as examples when the interval between the substrates 210 and 230 is small during the bonding process.

[0037] Figure 14 It is a schematic cross-sectional view for explaining a modified example of the gas supply method.

[0038] Figure 15 This diagram shows an example of a computer 1200 that can implement the various aspects of the present invention in whole or in part. DETAILED DESCRIPTION

[0039] The following describes embodiments of the invention. The embodiments described below do not limit the invention as claimed. Not all combinations of features described in the embodiments are essential to the solution of the invention.

[0040] Figure 1 is a schematic plan view of the substrate bonding unit 10. The substrate bonding unit 10 is provided with a control device 50 and a substrate bonding device 100.

[0041] The control device 50 controls the substrate bonding device 100 that bonds at least two substrates 210, 230 to manufacture a layered substrate 201. More specifically, the control device 50 in the present embodiment causes each part of the substrate bonding device 100 to cooperate with each other to control uniformly. In addition, the control device 50 can also receive an instruction from the outside by a user and set a manufacturing condition at the time of manufacturing the layered substrate 201, for example. The control device 50 can also have a user interface that displays the operation state of the substrate bonding device 100 to the user outside.

[0042] The substrate bonding device 100 is provided with a housing 110, substrate cassettes 120, 130, a retainer receptacle 400, a conveyance section 140, an activation device 170, a bonding section 300, a gas supply section 350, and a pre-aligner 500.

[0043] The housing 110 houses the substrate cassettes 120, 130, the conveyance section 140, the bonding section 300, the retainer receptacle 400, and the pre-aligner 500. The inside of the housing 110 is temperature-managed, for example, kept at room temperature.

[0044] The substrate cassette 120 houses substrates 210, 230 to be bonded. The substrate cassette 130 houses a layered substrate 201.

[0045] The substrates 210, 230 each have a plurality of structures formed on the surface of a silicon wafer. One example of the plurality of structures is a plurality of circuit regions periodically arranged in the surface direction on each surface of the substrates 210, 230, and a wiring, a protective film, a pad, a bump, or the like that becomes a connection terminal when electrically connecting the substrates 210, 230 and other substrates 230, 210, a lead frame, or the like, is provided in each of the plurality of circuit regions formed by photolithography or the like. Another example of the plurality of structures is a plurality of alignment marks that become an index when aligning the substrates 210, 230 and other substrates 230, 210. The plurality of alignment marks are provided in a scribe line arranged between the plurality of circuit regions on each surface of the substrates 210, 230, for example.

[0046] The holder receiver 400 accommodates substrate holders 220 and 240 that hold substrates 210 and 230. The substrate holders 220 and 240 are formed from a hard material such as alumina ceramic and use electrostatic chucks, vacuum chucks, or the like to suction and hold the substrates 210 and 230, the laminated substrate 201, and the like. The overall shape of the support surface of the substrate holders 220 and 240 can be flat, convex, or, for example, a free-form surface adapted to the in-plane deformation of the held substrate.

[0047] The transport unit 140 holds and transports the substrates 210 , 230 , substrate holders 220 , 240 , and the stacked substrate 201 , etc., or holds and transports the substrate holders 220 , 240 holding the substrates 210 , 230 , and the stacked substrate 201 , etc.

[0048] The activation device 170 is carried into the substrate holders 220 and 240 holding the substrates 210 and 230 through the above-mentioned conveying unit 140. The activation device 170 generates plasma to clean the respective bonding surfaces of the substrates 210 and 230. In the activation device 170, for example, oxygen gas as a processing gas is excited to be plasma-formed under a reduced pressure atmosphere, and oxygen ions are irradiated to the respective bonding surfaces of the substrates 210 and 230. For example, when the substrate 230 is a wafer with an SiO film formed on Si, the SiO bond in the bonding surface is cut off, forming dangling bonds of Si and O. Sometimes the formation of such dangling bonds on the surface of the substrate is called activation. If exposed to the atmosphere in this state, the moisture in the air will combine with the dangling bonds, causing the surface of the substrate to be covered with OH groups. As a result, the surface of the substrate becomes a state that is easy to combine with water molecules, that is, a state that is easy to be hydrophilic. That is, through activation, the surface of the substrate becomes a state that is easy to be hydrophilic. Although not shown, a hydrophilizing device for hydrophilizing the surfaces of the substrates coats the bonding surfaces of the two substrates with pure water, for example, to hydrophilize the bonding surfaces and clean the bonding surfaces.

[0049] In addition, in addition to the method of exposure to plasma, the activation device 170 can also activate the surface of the substrate 210, 230 by sputter etching using an inert gas, an ion beam, or a high-speed atomic beam. When an ion beam or a high-speed atomic beam is used, the activation device 170 can be generated under reduced pressure. In addition, the activation device 170 can also activate the substrate 210, 230 by ultraviolet irradiation, ozone ashing, etc. In addition, the activation device 170 can also activate the surface of the substrate 210, 230 by chemically cleaning the surface of the substrate 210, 230 using a liquid or gaseous etchant. In addition, after the surface of the substrate 210, 230 is activated, the surface of the substrate 210, 230 can be hydrophilized by the above-mentioned hydrophilization device.

[0050] The laminating unit 300 includes an upper stage 322 and a lower stage 332 facing each other. The upper stage 322 holds the activated substrates 210 and 230 via the substrate holders 220 and 240. The lower stage 332 similarly holds the activated substrates 210 and 230 via the substrate holders 220 and 240.

[0051] The upper table 322 and the lower table 332 can also directly hold the activated substrates 210 and 230, respectively. In this case, a substrate holder can also be fixed to the upper table 322 and the lower table 332. In other words, when referred to as a substrate holder, it sometimes refers to a device that can be transported, such as the substrate holders 220 and 240, and sometimes refers to a device that cannot be transported, such as the substrate holders 220 and 240 that are fixed to the upper table 322 and the lower table 332. The upper table 322 and the lower table 332 are examples of two holding portions that hold the substrates 210 and 230 to be bonded.

[0052] The laminating unit 300 aligns the substrates 210 and 230 held on the upper and lower work tables 322 and 332, respectively. The laminating unit 300 then maintains one of the substrates 210 and 230 held on one of the upper and lower work tables 322 and 332, while releasing the other of the upper and lower work tables 322 and 332 from holding the other substrate 210 and 230. This allows the activated substrates 210 and 230 to contact and laminate with each other.

[0053] Here, the bonded state may refer to a state in which the terminals provided on the two stacked substrates are connected to each other, thereby ensuring electrical conduction between the two substrates. Alternatively, it may refer to a state in which the terminals provided on the two stacked substrates are connected to each other, thereby ensuring electrical conduction between the two substrates. Alternatively, it may refer to a state in which the bonding strength of the two substrates becomes greater than a specified strength by connecting the terminals provided on the two stacked substrates to each other. Alternatively, in the case where the terminals of the two substrates are electrically connected by subjecting the two stacked substrates to a treatment such as annealing, it may refer to a state in which the two substrates are temporarily bonded before the annealing treatment, i.e., a temporarily bonded state. Alternatively, in the case where terminals for electrical connection are formed on the two substrates after the two substrates are bonded, it may refer to a state in which the bonding surfaces of the two substrates where no terminals are formed are bonded to each other. Alternatively, in the case where the bonding strength of the two substrates becomes greater than a specified strength by subjecting the two stacked substrates to a treatment such as annealing, it may refer to the aforementioned temporarily bonded state before the annealing treatment. A state in which the bonding strength becomes greater than a specified strength by annealing, for example, includes a state in which the surfaces of the two substrates are bonded to each other by covalent bonds. Alternatively, the temporarily bonded state includes a state in which the two overlapping substrates can be separated and reused.

[0054] The gas supply unit 350 is connected to the bonding unit 300 and supplies gas into the bonding unit 300. More specifically, the gas supply unit 350 starts supplying the gas between the substrates 210 and 230 before the substrates 210 and 230 to be bonded come into contact. The gas supply unit 350 also supplies the gas between the substrates 210 and 230 after the substrates 210 and 230 come into contact. The gas supply unit 350 involved in this embodiment may also replace the gas with the atmosphere between the substrates 210 and 230 before the contact between the substrates 210 and 230, and continue to supply the gas between the substrates 210 and 230 until the contact area reaches the outer peripheral side of the substrates 210 and 230 after the contact between the substrates 210 and 230. As an example, the gas may be a gas obtained by controlling the humidity of an inert gas such as helium (He) gas, argon (Ar) gas, a mixed gas of helium and argon, nitrogen (N2) gas, CDA (clean dry air), or the like. In this embodiment, the gas is helium, which is lighter than air. The contact region is formed between the substrates 210 and 230 by bringing a portion of the substrate 210 into contact with a portion of the substrate 230 and gradually expanding.

[0055] The gas supply unit 350 can adjust the supply conditions of the gas based on a command from the control device 50. As an example, the gas supply unit 350 includes a heater, a mass flow controller, a regulator, etc., and can adjust the temperature, flow rate, pressure, etc. of the gas.

[0056] Furthermore, in this embodiment, in addition to the gas supplied by the gas supply unit 350, air flows in one direction from the sides of the substrates 210, 230 toward the substrates 210, 230 in the laminating unit 300 to maintain a constant temperature between the substrates 210, 230 to be laminated. This flow of air in one direction is sometimes referred to as a side flow. The humidity of this air may also be maintained constant.

[0057] The pre-aligner 500 aligns the substrates 210 and 230 with the substrate holders 220 and 240 , respectively, and holds the substrates 210 and 230 on the substrate holders 220 and 240 , respectively.

[0058] In the substrate bonding device 100 as described above, in addition to the substrates 210 and 230 formed with components, circuits, terminals, etc. as described above, it is also possible to bond unprocessed silicon wafers, i.e. bare silicon, SiGe substrates with Ge added, Ge single crystal substrates, compound semiconductor wafers such as those of Group III-V or Group II-VI, and glass substrates without forming structures. The objects to be bonded can be a circuit substrate and an unprocessed substrate, or unprocessed substrates can be bonded to each other. The substrates 210 and 230 to be bonded can also be a stacked substrate 201 having multiple stacked substrates. The substrates 210 and 230 to be bonded can also have approximately the same external dimensions as each other in a state where no deformation occurs. In addition, the external shapes of the substrates 210 and 230 can be approximately circular or have other shapes.

[0059] Figures 2 to 4 : is a schematic cross-sectional view of the laminating unit 300 for explaining the operation of the laminating unit 300 before the gas control step. Figures 2 to 4 The structure of the laminating unit 300 of this embodiment and an outline of the steps before the gas control step in the laminating unit 300 including, for example, the alignment process between the substrates 210 and 230 will be described.

[0060] like Figure 2 As shown, in this embodiment, the control device 50 causes the upper table 322 of the laminating section 300 to hold the substrate 210 via the substrate holder 220, and causes the lower table 332 to hold the substrate 230 via the substrate holder 240. The substrate holder 220 holding the substrate 210 is carried into the laminating section 300 and placed on the upper table 322 by the aforementioned conveying section 140, while the substrate holder 240 holding the substrate 230 is carried into the laminating section 300 and placed on the lower table 332.

[0061] The upper workbench 322 has a holding function such as a vacuum chuck or an electrostatic chuck, and is fixed to the top plate 316 of the frame 310 facing downward. The lower workbench 332 has a holding function such as a vacuum chuck or an electrostatic chuck, and is mounted on the upper surface of the Y-direction drive unit 333 that overlaps with the X-direction drive unit 331 disposed on the bottom plate 312 of the frame 310. Figures 2 to 4 , the structure of the support surfaces of the substrate holders 220 and 240 is simplified and depicted as flat. In the following drawings, repeated descriptions are also omitted.

[0062] A microscope 324 is fixed to the top plate 316 on the side of the upper stage 322. The microscope 324 can observe the upper surface of the substrate 230 held on the lower stage 332. A plurality of fixed piping portions 321 are also fixed to the top plate 316 on the side of the upper stage 322.

[0063] The plurality of fixed pipe portions 321 are each configured to have one end connected to the gas supply portion 350 and the other end exposed to the side of the upper stage 322 inside the bonding portion 300, and are capable of sending the gas supplied from the gas supply portion 350 into the bonding portion 300. In the present embodiment, the plurality of fixed pipe portions 321 each have a valve for adjusting the flow rate at the aforementioned one end, and the flow rate of the gas supplied into the bonding portion 300 is adjusted by the gas supply portion 350 either individually or collectively.

[0064] As one example, as shown in (A) of FIG. 9, a filling top plate 323 that surrounds the periphery of the upper stage 322 of the substrate holder 220 is attached to the aforementioned other end of the fixed pipe portion 321. As another example, as shown in (B) of FIG. 9, a filling cover portion 327 that surrounds the periphery of the upper stage 322 of the substrate holder 220 is attached to the aforementioned other end of the fixed pipe portion 321. In the present embodiment, several of the plurality of fixed pipe portions 321 have the filling top plate 323 attached to the aforementioned other end, and several of the plurality of fixed pipe portions 321 have the filling cover portion 327 attached to the aforementioned other end. Furthermore, in (C) of FIG. 9, the illustration of part of the fixed pipe portion 321 is omitted for the purpose of simplifying the explanation. Figure 2 Figure 2

[0065] The filling top plate 323 is a disc-shaped member that has an opening through which the upper stage 322 passes in the center. When the substrate holder 220 is held by the upper stage 322, the filling top plate 323 is disposed so as to oppose the back surface of the substrate holder 220, i.e., the surface on which the substrate 210 is not placed. When the substrate holder 220 is held by the upper stage 322, the filling top plate 323 is attached to the fixed pipe portion 321 so that the aforementioned other end of the fixed pipe portion 321 is exposed between the filling top plate 323 and the substrate holder 220. On the upper surface of the filling top plate 323, a flat annular sealing member 328 is fixed along the outer periphery of the filling top plate 323. The sealing member 328 can be made of rubber, for example. Furthermore, the sealing member 328 can be an O-ring.

[0066] The filling cover portion 327 is a substantially square tubular member that has an opening through which the upper stage 322 or the like passes in the center. As shown in (A) of FIG. 10, in which the inside of the broken line circle is partially enlarged, the filling cover portion 327 has a side wall 341, a top plate 343 that extends and projects toward the center side in the XY plane from the upper end of the Z-axis direction positive side of the side wall 341, and a bottom plate 345 that extends and projects toward the center side in the XY plane from the lower end of the Z-axis direction negative side of the side wall 341. Figure 2

[0067] ​​​The filling cover 327 is held by the fixed piping 321 via the cylinder 326 and the lifting arm 325. The cylinder 326 is connected to the fixed piping 321 and expands and contracts in the Z-axis direction using the energy of compressed air. The lifting arm 325 is connected to the cylinder 326 and can be raised and lowered in the Z-axis direction by the expansion and contraction of the cylinder 326. Thus, the filling cover 327 can be raised and lowered in the Z-axis direction as the lifting arm 325 is raised and lowered.

[0068] When the filling cover 327 rises to the most positive side in the Z-axis direction, the lower end of the filling cover 327 in the Z-axis direction is located on the positive side in the Z-axis direction relative to the bonding surface of the substrate 210 held by the upper workbench 322. Therefore, when rising to the most positive side in the Z-axis direction, the filling cover 327 does not contact structures such as the substrate 230 on the lower workbench 332 that is on the negative side in the Z-axis direction relative to the bonding surface of the substrate 210 held by the upper workbench 322 and that moves in the XY plane. In addition, as Figures 2 to 4 As shown, the lifting arm portion 325 and the filling cover portion 327 before the gas control step are maintained in a state of being located at the most positive side in the Z-axis direction.

[0069] Furthermore, when the filling cover 327 is lowered to the most negative side in the Z-axis direction, while the substrates 210 and 230 held by the upper stage 322 and the lower stage 332 face each other, it can laterally surround the substrates 210 and 230 along their entire circumferences. When lowered to the most negative side in the Z-axis direction, the bottom plate 345 of the filling cover 327 is positioned substantially at the same position as the substrate holder 240 along the Z-axis, and the top plate 343 of the filling cover 327 is connected to the filling top plate 323 via the sealing member 328. In this case, the sealing member 328 can also be in close contact with the lower surface of the top plate 343 of the filling cover 327 along its entire circumference.

[0070] The X-direction drive unit 331 moves in the direction indicated by arrow X in the figure, parallel to the base plate 312. The Y-direction drive unit 333 moves on the X-direction drive unit 331, parallel to the base plate 312, in the direction indicated by arrow Y in the figure. By combining the operations of the X-direction drive unit 331 and the Y-direction drive unit 333, the lower worktable 332 moves two-dimensionally, parallel to the base plate 312.

[0071] The lower table 332 is supported by a lifting drive unit 338 and is moved up and down in the direction indicated by arrow Z in the figure by the drive of the lifting drive unit 338. Thus, the lower table 332 displaces the relative position of the substrate 230 held on the substrate holder 240 and the substrate 210 held on the substrate holder 220 between the lower table 332 and the upper table 322 that holds the substrate 210 via the substrate holder 220.

[0072] The amount of movement of the lower stage 332 realized based on the X-direction drive section 331, the Y-direction drive section 333, and the lift drive section 338 is precisely measured using an interferometer or the like.

[0073] In the Y-direction drive section 333, a microscope 334 is mounted on the side of the lower stage 332. The microscope 334 can observe the surface of the lower surface of the substrate 210 held on the upper stage 322.

[0074] Further, the bonding section 300 can also be provided with a rotation drive section that rotates the lower stage 332 around an axis of rotation perpendicular to the bottom plate 312, and a swing drive section that swings the lower stage 332. Thereby, the lower stage 332 can be made parallel to the upper stage 322, and the substrate 230 held on the lower stage 332 can be rotated to improve the alignment accuracy of the substrates 210, 230.

[0075] The microscopes 324, 334 are aligned with each other in focus or calibrated by observing a common index by the control device 50. Thereby, the relative positions of the pair of microscopes 324, 334 in the bonding section 300 are determined.

[0076] Continuing Figure 2 As shown in the state Figure 3 The control device 50 causes the X-direction drive section 331 and the Y-direction drive section 333 to act, detects the alignment marks respectively provided on the substrate 210 and the substrate 230 using the microscopes 324, 334 whose relative positions are known, and calculates the relative positions of the substrate 210 and the substrate 230. Then, the relative movement amount of the substrate 210 and the substrate 230 is calculated so that the positional displacement amount between the corresponding alignment marks in the substrate 210 and the substrate 230 becomes below a predetermined threshold value, and the positional displacement amount of the corresponding connection structure between the substrate 210 and the substrate 230 becomes below a predetermined threshold value. The positional displacement can refer to the positional displacement of the corresponding alignment marks between the bonded substrate 210 and the substrate 230, or the positional displacement of the corresponding connection structure between the bonded substrate 210 and the substrate 230. The positional displacement is sometimes caused by the difference in the amount of deformation generated in each of the two substrates 210, 230.

[0077] Here, the threshold value can be an amount of displacement that enables electrical conduction between the substrates 210, 230 when the substrates 210, 230 are bonded to each other, or an amount of displacement when at least a portion of the structures provided on the substrates 210, 230 contact each other. The control device 50 can also determine that the connection structures do not contact each other or that an appropriate electrical conduction cannot be obtained, or that a prescribed bonding strength cannot be obtained between the connection structures, when the positional displacement between the substrates 210, 230 becomes equal to or greater than a predetermined threshold value.

[0078] Continuing Figure 3 As shown in the state Figure 4 The control device 50 moves the lower stage 332 to align the substrates 210, 230 with each other. More specifically, the control device 50 moves the lower stage 332 in such a manner that the positions of the alignment marks of the substrates 210, 230 coincide with each other, based on the relative positions of the microscopes 324, 334 and the positions of the alignment marks of the substrates 210, 230.

[0079] Figure 5 is an explanatory view of the expansion of the contact area and the relative shapes of the substrates 210, 230. As described above, in the case of bonding the substrate 230 to the substrate 210, the contact area is formed by bringing a portion of the substrate 230 into contact with a portion of the substrate 210, and then expanding the contact area.

[0080] For example, in the case where the substrate holder 240 has a convexly curved support surface, the contact area is formed by bringing the convexly curved portion of the substrate 230 that is deformed by following the curved support surface of the substrate holder 240 into contact with the substrate 210, and then expanding the contact area, thereby bonding the substrate 210 to the substrate 230 in a state where the substrate 230 is deformed.

[0081] More specifically, first, the substrates 210, 230 are brought close to each other, and a portion of the substrate 210 is brought into contact with a portion of the substrate 230, thereby forming a contact area at the contact site that has been activated. Further, the holding of the substrate 210 by the upper stage 322 of the substrate holder 220 is released, and the regions adjacent to the contact site are automatically adsorbed to each other by the intermolecular forces of the activated surfaces, thereby generating a Bonding Wave (also referred to as a Bonding Wave. Hereinafter, sometimes referred to as BW) in which the contact area expands in the radial direction outward from the substrates 210, 230, and thereby the substrates 210, 230 are bonded to each other in a state where the substrate 230 is deformed.

[0082] By using substrate holder 240 having a convex support surface, substrate 210 and substrate 230 form only a single contact point. This reduces the generation of gaps within the bonding surface that would otherwise occur if multiple contact points were formed. Furthermore, in this embodiment, the bonding process includes the process from the moment substrates 210 and 230 partially contact each other until the contact area is expanded.

[0083] exist Figure 5 In FIG, the left side shows a state where the peripheral portion of the contact area (i.e., the front end portion in the direction of travel of BW in the cross section) is still located on the center side of the substrates 210 and 230, and the right side shows a state where the peripheral portion of the contact area reaches the peripheral side of the substrates 210 and 230. Figure 5 In the figure, the upper and lower substrate holders are omitted.

[0084] exist Figure 5 In the state of the left side, the free upper substrate 210 not held by the substrate holder becomes a state of large bending due to the resistance of the air between the substrates. Figure 5 When the contact area is on the right side, the outer periphery of the contact area reaches the outer periphery of substrates 210 and 230, allowing the air between the substrates to be released to the outside. This changes the way substrate 210 withstands air resistance. Specifically, the area on the outer periphery of substrates 210 and 230 that withstands the air resistance between the substrates is smaller than that on the central side of substrates 210 and 230. With substrate 210 remaining flat (straight in cross-section), the space between the substrates is closed.

[0085] exist Figure 5 , schematically shown are the relative shapes of the substrates 210 and 230 at the peripheral portion of the contact area in each state. Comparing the two relative shapes, the spacing between the substrates 210 and 230 at any constant distance from the contact area toward the peripheral side is narrower when the contact area is located on the peripheral side than when the contact area is located on the central side. If the spacing between the substrates 210 and 230 is narrow, the pressure of gases such as air between the substrates 210 and 230, or liquids such as water produced by condensation, is likely to increase. As a result, the gas or liquid is not squeezed out to the outside and remains between the substrates 210 and 230, forming gaps (also called bubbles) that may induce peeling of the laminated substrate 201. In other words, the risk of gaps being generated in the peripheral portion between the substrates 210 and 230 to be bonded is higher than in the central portion. In addition, when bonding using a substrate holder having a holding area (an area in contact with the substrate 230 to be maintained during bonding) having a diameter slightly smaller than the diameter, the risk of gaps being generated is higher. Experimental data showed that when the substrates 210 and 230 were not held by the substrate holder, that is, when there was an overhang on the periphery of the substrate 230 that was not held by the substrate holder, a large amount of voids were generated several millimeters inward from the periphery of the laminated substrate 201. Furthermore, even when there was no overhang on the periphery of the substrate 230 that was not held by the substrate holder, voids were still generated several millimeters inward from the periphery of the laminated substrate 201.

[0086] As types of gaps generated in the peripheral portion of the stacked substrate 201, there are, for example, step gaps and adiabatic expansion gaps. Step gaps refer to gaps generated due to the unevenness of the peripheral side of the bonding surface of the substrates 210 and 230, resulting in residual air or other gases in the uneven portion during the bonding process. Adiabatic expansion gaps refer to gaps generated due to adiabatic expansion of the gas containing moisture that moves from the central side toward the peripheral side of the substrates 210 and 230 during the bonding process, resulting in a sharp drop in temperature and moisture condensation due to a large pressure change relative to the outside of the substrates 210 and 230. Therefore, the faster the BW speed or the higher the air pressure between the upper and lower substrates, the higher the risk of adiabatic expansion gaps.

[0087] Figure 6 These are schematic explanatory diagrams for explaining an example (a) to (d) of the relationship between the peripheral sagging and warping of the substrate 230 and the interval between the substrates 210 and 230 on the peripheral side. Figure 6 In the example shown, the substrate holder 240 has an annular wall portion 241 that surrounds the outer peripheral side of the support surface at least over the entire circumference, and the substrate 230 placed on the wall portion 241 is adsorbed by making the inner side of the wall portion 241 negative pressure. Figure 6 In the illustrated example, an overhang portion exists on the periphery of the substrate 230 , which is located on the outer peripheral side of the wall portion 241 of the substrate holder 240 and is not attracted to the substrate holder 240 .

[0088] exist Figure 6 (a) and Figure 6 (b) shows different ways in which the peripheral portion of the substrate 230 to be bonded may sag. Peripheral sag occurs when the thickness of the peripheral portion is smaller than the thickness of the radially central portion of the substrate 230 to be bonded. The radially central portion of the substrate 230 is the area including the center of the substrate 230, while the radially peripheral portion of the substrate 230 is the area outside the central portion of the substrate 230, extending from at least the point where the BW between the substrates 210 and 230 ends to a position a predetermined distance inward of the substrate 230, including the area where a gap is generated.

[0089] For example, the outer periphery of the wiring layer laminated on the surface of the substrate 230 to be bonded by the substrate bonding apparatus 100 may be thinner than the central portion as a result of CMP (chemical mechanical polishing) after each wiring layer film formation. This may result in the thickness of the substrate 230 itself decreasing from the central portion toward the outer periphery. This thickness variation of the substrate 230 may be manifested as peripheral sagging of the substrate 230, and the difference between the thickness of the central portion and the thickness of the outer periphery of the substrate 230 may be referred to as the sagging amount.

[0090] Figure 6 The thickness of the central portion of the substrate 230 shown in (a) is Figure 6 The thickness of the central portion of the substrate 230 shown in (b) is the same as each other. However, Figure 6 The thickness of the outer periphery of the substrate 230 shown in (b) is Figure 6 The thickness of the outer periphery of substrate 230 shown in (a) is large, in other words, the amount of outer peripheral sagging is small. As a result, as indicated by the hollow arrows in both figures, for substrate 230 with small sagging, or for substrate 230 including a portion with small sagging, the space between substrate 210 and substrate 230 is narrowed along the entire or a portion of the outer periphery, increasing the risk of the aforementioned adiabatic expansion gap.

[0091] exist Figure 6 (c) and Figure 6 (d) shows different forms of warping of the peripheral portion of the substrate 230 to be bonded. The substrate 230 to be bonded by the substrate bonding device 100 may sometimes bend unevenly within the surface or bend uniformly within the entire surface. For example, the peripheral side of the substrate 230 may sometimes be warped into a concave shape toward the bonding surface side. When such a substrate 230 is held by a vacuum suction cup-type substrate holder 240 having an annular wall portion 241 formed on the outermost periphery, and there is an overhanging portion in the substrate 230 that is located on the outer periphery side of the wall portion 241 and is not held by the substrate holder 240, the overhanging portion of the substrate 230 will be warped toward the side of the substrate 210 to be bonded due to the above-mentioned concave warping.

[0092] Figure 6 (d) The substrate 230 shown in FIG. Figure 6 Compared to the substrate 230 shown in (c), the warping is greater in at least a portion. As a result, as indicated by the hollow arrows in both figures, for the substrate 230 with a large warping amount, or for the substrate 230 including the large warping area, the space between the substrate 210 and the substrate 230 is narrowed along the entire or a portion of the outer periphery, increasing the risk of adiabatic expansion gaps.

[0093] In addition, Figure 6In the description, as an example, a case where the substrate 230 held on the lower workbench 332 has peripheral sagging and warping is described. However, even in a case where the substrate 230 is replaced with the substrate 210 held on the upper workbench 322 and has peripheral sagging and warping, or in a case where both the substrate 210 and the substrate 230 held on the upper workbench 322 and the lower workbench 332 have peripheral sagging and warping, the same description as above applies, and therefore repeated descriptions are omitted.

[0094] Figure 7 : is a schematic cross-sectional view of the laminating unit 300 for explaining the operation of the laminating unit 300 in the gas control process. Figure 7 As indicated by the hollow arrow, the control device 50 operates the cylinder unit 326 to lower the lifting arm unit 325 and the filling cover unit 327 to the most negative side in the Z-axis direction. As a result, the filling cover unit 327 laterally surrounds the substrates 210 and 230 held by the upper stage 322 and the lower stage 332 in a facing state.

[0095] The control device 50 in this embodiment replaces the gas supplied by the gas supply unit 350 into the laminating unit 300 via the fixed piping unit 321 with the atmosphere between the substrates 210 and 230 to be laminated before the substrates 210 and 230 come into contact. However, in this embodiment, the control device 50 may also increase the gap between the substrates 210 and 230 held by the upper stage 322 and the lower stage 332 after the substrates 210 and 230 to be laminated are positioned opposite each other and before replacing the gas from the gas supply unit 350 with the atmosphere between the substrates 210 and 230 to be laminated. As an example, the control device 50 may increase the gap from 2 mm to 4 mm.

[0096] More specifically, continue Figure 4 As shown, the substrates 210 and 230 to be bonded are placed opposite to each other. Figure 7As indicated by the hollow arrow, the control device 50 activates the lift drive unit 338 to lower the lower table 332 in the negative direction of the Z axis, thereby increasing the distance between the substrates 210 and 230. When aligning the substrates 210 and 230, the distance between the substrates 210 and 230 is typically narrowed to minimize post-alignment stage movement and prevent positional shifting between the substrates 210 and 230. When this distance is narrow, there is a concern that the gas supplied from the gas supply unit 350 into the space between the substrates 210 and 230 may not be quickly and fully filled due to its viscosity. Therefore, the control device 50 of this embodiment increases the distance between the substrates 210 and 230 before exchanging the gas from the gas supply unit 350 with the atmosphere between the substrates 210 and 230 to be bonded. This allows the gas from the gas supply unit 350 to be quickly and fully filled into the space between the substrates 210 and 230. In addition, at the moment when the detection of the alignment marks of the two substrates 210 and 230 is completed, or the moment when the alignment of the two substrates 210 and 230 is completed, if the distance between the substrates 210 and 230 is large enough to be filled with gas, the distance between the substrates 210 and 230 can be further expanded before replacing the gas.

[0097] The control device 50 controls the supply conditions of the gas supplied between the two substrates 210, 230 before they come into contact with each other. The control device 50 also controls the supply conditions based on measurement results of the substrates 210, 230, or the substrate bonding apparatus 100. As an example, the supply conditions may be at least one of the supply flow rate, supply pressure, supply time, supply direction, humidity, temperature, and exhaust flow rate of the gas.

[0098] In this embodiment, as described below Figures 8 to 10 As shown, the plurality of fixed pipe sections 321 can deliver gas from multiple directions to the substrates 210 and 230 to be bonded in the bonding section 300. Figures 8 to 10 In the embodiment, for the purpose of clear description, each of the fixed piping parts 321 that supplies gas to the laminating part 300 in the same path is illustrated using different drawings, but the laminating part 300 involved in this embodiment includes Figures 8 to 10 Therefore, the control device 50 involved in this embodiment can adjust the supply flow rate, supply pressure, supply time, supply direction, humidity, and temperature of the gas supplied from the gas supply unit 350 to the bonding unit 300 through part or all of the multiple fixed piping units 321 provided with valves that can independently adjust the flow rate. In addition, the bonding unit 300 may also include only Figures 8 to 10 A portion of the plurality of fixed piping portions 321 is shown.

[0099] Figure 8 (A) is a schematic top view and (B) is a schematic cross-sectional view for explaining a gas supply method achieved by fixed piping sections 321-1A to 321-1D. Figure 8 (A) shows the fixed piping sections 321-1A to 321-1D, the filling cover section 327, and the filling top plate 323 when viewed from the positive Z-axis direction. Furthermore, the outline of the portion of the filling top plate 323 hidden by the top plate 343 of the filling cover section 327 when viewed from the same direction is shown by a thin dashed line. Furthermore, the seal member 328 when viewed from the same direction is shown by a thick dashed line.

[0100] Figure 8 (B) Extract the laminating portion 300 Figure 8 The cross-section of the filling cover part 327, etc. at the line II shown in (A), and the cross-section of the upper workbench 322, the lower workbench 332, the substrates 210, 230, and the substrate holders 220, 240 are schematically represented together with the gas supply part 350 connected to one end of the fixed piping part 321-1A to 321-1D.

[0101] In addition, Figure 8 In FIG. 3 , the flow of gas supplied from the gas supply unit 350 through the fixed piping units 321 - 1A to 321 - 1D to the bonding unit 300 is shown by hollow thin arrows. Figure 8 In FIG, the side flow described above is shown by the thickest hollow arrow. Figure 8 As shown in FIG. 1 , in this embodiment, the side flow flows unidirectionally from the upper side to the lower side in the figure. Figure 8 The above description will be explained later. Figure 9 as well as Figure 10 The same is true in the text, and repeated descriptions are omitted.

[0102] One end of each of the fixed piping sections 321-1A to 321-1D extending within the laminating section 300 is coupled to the filling top plate 323. More specifically, the one end of the fixed piping section 321-1A is coupled to the upstream side of the side flow in the filling top plate 323, while the one end of the fixed piping section 321-1C is coupled to the downstream side of the side flow in the filling top plate 323. Furthermore, the one ends of the fixed piping sections 321-1B and 321-1D are located at opposing ends of the filling top plate 323, approximately midway between the locations where the fixed piping sections 321-1A and 321-1C are coupled.

[0103] The gas supplied from the gas supply unit 350 via the fixed piping units 321-1A to 321-1D is released in the negative Z-axis direction toward the surface of the substrate holder 220 on which the substrate 210 is not placed, and diffuses radially outward along the surface of the substrate holder 220. The gas supplied from the fixed piping units 321-1A to 321-1D can be at a relatively low flow rate.

[0104] The lower surface of the top plate 343 of the filling cover 327 is sealed against the upper surface of the filling cover 323 by a sealing member 328. In this embodiment, the gas supplied into the laminating unit 300 by the gas supply unit 350 is helium. Therefore, the gas, which has passed through the back surface of the substrate holder 220 and diffused radially outward, fills the space between the substrate holder 220 and the filling cover 327 from above. In other words, this gas gradually replaces the atmosphere between the substrate holder 220 and the filling cover 327 from the positive Z-axis side.

[0105] As the replacement proceeds, the gas reaches a position on the negative side of the bonding surface of substrate 210 in the Z-axis direction and flows between substrate 210 and substrate 230. At this time, the gas is also affected by the side flow and efficiently flows between substrates 210 and 230, replacing the atmosphere between substrates 210 and 230.

[0106] According to the gas supply method performed through the fixed piping sections 321-1A to 321-1D, the time required to replace the gas with the atmosphere between the substrates 210 and 230 is relatively long, but since the gas is not directly delivered from the fixed piping sections 321-1A to 321-1D toward the substrates 210 and 230, the particles that may be contained in the gas have little effect on the bonding surfaces of the substrates 210 and 230.

[0107] Figure 9 (A) is a schematic plan view and (B) is a schematic cross-sectional view for explaining a gas supply method through the fixed piping portions 321 - 2A and 321 - 2B. Figure 9 (B) Extract the laminating portion 300 Figure 9 The cross-section of the filling cover part 327, etc. at the II-II line shown in (A), and the cross-section of the upper workbench 322, the lower workbench 332, the substrates 210, 230, and the substrate holders 220, 240 are schematically represented together with the gas supply part 350 connected to one end of the fixed piping part 321-2A~321-2B.

[0108] The one end of each of the fixed pipe portions 321-2A to 321-2B extending within the bonding portion 300 is joined to the top plate 343 of the filling cover portion 327. More specifically, the one end of the fixed pipe portion 321-2A and the fixed pipe portion 321-2B is joined to the opposite ends in the top plate 343 of the filling cover portion 327 on the upstream side of the lateral flow. Further, when the lateral flow does not flow within the bonding portion 300, the one end of the fixed pipe portion 321-2A and the fixed pipe portion 321-2B can be joined to the opposite ends in the top plate 343 of the filling cover portion 327, for example, on the opposite side of the exhaust port of the gas in the bonding portion 300. When the lateral flow flows within the bonding portion 300, the joining position of the one end of the fixed pipe portion 321-2A and the fixed pipe portion 321-2B in the top plate 343 of the filling cover portion 327 is preferably determined in accordance with the flow direction of the lateral flow.

[0109] As described above, the filling cover portion 327 is moved in the Z-axis direction with respect to the upper stage 322. Therefore, the one end of the fixed pipe portion 321-2A and the fixed pipe portion 321-2B can be joined to the top plate 343 of the filling cover portion 327 via a hinge, for example, so that the fixed pipe portion 321-2A and the like do not interfere with the movement of the filling cover portion 327 when the filling cover portion 327 is moved. Alternatively, the fixed pipe portion 321-2A and the fixed pipe portion 321-2B can be moved together with the filling cover portion 327, or can be formed of a material having flexibility and can be stretched and contracted in accordance with the movement of the filling cover portion 327.

[0110] The gas supplied from the gas supply portion 350 via the fixed pipe portions 321-2A to 321-2B is released toward the upper surface of the bottom plate 345 of the filling cover portion 327 in the negative direction of the Z-axis, and is reflected by the reflection plate provided to the upper surface of the bottom plate 345 to flow toward the center between the substrates 210, 230. At this time, the gas is also efficiently caused to flow between the substrates 210, 230 by the influence of the lateral flow, and the atmosphere between the substrates 210, 230 is replaced.

[0111] According to the gas supply method by the fixed pipe portions 321-2A to 321-2B, the time required for the replacement of the atmosphere between the substrates 210, 230 by the gas can be made relatively short. Further, according to the gas supply method, the gas flow toward the center between the substrates 210, 230 from the fixed pipe portion 321-2A and the fixed pipe portion 321-2B is also influenced by the lateral flow, so that the gas flow is directed toward the downstream side of the lateral flow without reduction in the flow rate, and thus particles possibly contained in the gas are less likely to be trapped between the substrates 210, 230, and the influence of the particles on the bonding surface of the substrates 210, 230 is small.

[0112] Figure 10(A) is a schematic plan view and (B) is a schematic cross-sectional view for explaining a gas supply method achieved by the fixed piping portions 321 - 3A to 321 - 3D. Figure 10 (B) Extract the laminating portion 300 Figure 10 The cross-section of the filling cover part 327, etc. at the III-III line shown in (A), and the cross-section of the upper workbench 322, the lower workbench 332, the substrates 210, 230, and the substrate holders 220, 240 are schematically represented together with the gas supply part 350 connected to one end of the fixed piping part 321-3A to 321-3D.

[0113] One end of each of the fixed piping sections 321-3A to 321-3D, extending within the laminating section 300, is joined to the sidewall 341 of the filling cover 327. More specifically, the one ends of the fixed piping sections 321-3A and 321-3B are joined to opposing ends on the upstream side of the sidestream in the sidewall 341 of the filling cover 327. However, the fixed piping section 321-3A supplies gas from the front side, along a tangential direction to the outer periphery of the substrates 210 and 230, relative to the flow direction of the sidestream, while the fixed piping section 321-3B supplies gas in a tangential direction to the substrates 210 and 230, parallel to the flow direction of the sidestream.

[0114] The one ends of the fixed piping section 321-3C and the fixed piping section 321-3D are connected to opposite ends on the downstream side of the side flow in the side wall 341 of the filling cover section 327. However, the fixed piping section 321-3C supplies gas from the front side in a tangential direction of the outer periphery of the substrates 210 and 230 relative to the flow direction of the side flow, while the fixed piping section 321-3D supplies gas in a tangential direction of the substrates 210 and 230 in parallel with the flow direction of the side flow.

[0115] Similar to the fixed piping section 321-2A and the like, the one ends of the fixed piping sections 321-3A to 321-3D may be coupled to the side wall 341 of the filling cover 327 via a hinge, for example, so that when the filling cover 327 moves, the fixed piping sections 321-3A and the like do not interfere with the movement of the filling cover 327. Alternatively, the fixed piping sections 321-3A to 321-3D may move together with the filling cover 327 or may be formed of a flexible material and expand and contract as the filling cover 327 moves.

[0116] The gas supplied from the gas supply section 350 via the fixed pipe sections 321-3A to 321-3D is released from four different directions along tangential directions of the outer periphery of the substrates 210, 230, that is, into the filling cover section 327 in a vortex flow. At this time, the gas is also efficiently flowed into the space between the substrates 210, 230 by the side flow, and the atmosphere between the substrates 210, 230 is replaced.

[0117] According to the gas supply method by the fixed pipe sections 321-3A to 321-3D, the gas can be directly supplied toward the outer periphery side between the substrates 210, 230 where the voids are likely to be generated. In addition, it is suitable to fill the low-cost CDA, nitrogen gas to the substrates 210, 230.

[0118] As described above, the control device 50 controls the above-described supply conditions based on a measurement result measured with respect to the substrates 210, 230 or the substrate bonding device 100. In the present embodiment, the measurement result can include, for example, a shape of a thickness of the outer periphery of the substrate 230 or the like. As one example, the shape of the thickness of the outer periphery can be the above-described shape of the outer periphery sag. In addition, the measurement result can include, for example, a shape of a warp of the substrate 230 or the like at the outer periphery.

[0119] In addition, the measurement result can include, for example, a shape of the BW generated between the substrates 210, 230 in the bonding process. In addition, the measurement result can include, for example, a shape of the void generated at the outer periphery of the bonded substrates 210, 230. In addition, the measurement result can include, for example, a shape of the bonding between the bonded substrates 210, 230.

[0120] In addition, the measurement result can include, for example, a gap between the substrates 210, 230 in the bonding process. In addition, the measurement result can include, for example, a relative position in the bonding direction (z-axis direction) of the upper stage 322 and the lower stage 332 on which the substrates 210, 230 are held in the bonding process. The relative position can be, for example, a difference between the Z-axis coordinate of the fixed upper stage 322 and the Z-axis coordinate of the movable lower stage 332, or a difference in at least one of the X-axis coordinate and the Y-axis coordinate.

[0121] In addition, the measurement result can be, for example, a spatial coordinate of the movable lower stage 332 on which the substrate 230 is held in the bonding process, or a Z-axis coordinate of the lower stage 332, or at least one of an X-axis coordinate and a Y-axis coordinate of the lower stage 332. In addition, the measurement result can be, for example, a combination of a plurality of examples of the above-described measurement results.

[0122] As an example, the control device 50 of this embodiment supplies gas at at least one of a relatively high supply flow rate, a relatively high supply pressure, and a relatively high temperature to at least one of a relatively thin area and a relatively large warping area on the periphery of the substrates 230 to be bonded. In this case, the control device 50 may also supply gas from multiple locations at equal intervals throughout the entire area between the substrates 210 and 230 to be bonded, that is, around the entire circumference of the substrates 210 and 230. Alternatively, the control device 50 may supply gas to the aforementioned thin area and the area with the largest warping amount, while not supplying gas to other areas. In this case, the gas may be sequentially distributed to the other areas. In addition, in the following embodiments, when gas is supplied to specific portions in the periphery of the substrate 230, etc. at relatively different supply flow rates, supply pressures or supply temperatures, similar to the above-mentioned gas supply method, gas can be blown toward the entire circumference of the substrate 210, 230, or gas can be blown toward a part of the entire circumference of the substrate 210, 230 without blowing gas to the remaining portions on the entire circumference.

[0123] As an example, the control device 50 involved in this embodiment supplies gas toward at least one of a portion of the peripheral portion of the substrate 230 to be bonded, such as a portion having a relatively small thickness, and a portion having a relatively large warping amount. In this case, the control device 50 supplies gas toward the portion having a small sagging amount and the portion having a large warping amount, and does not supply gas to other portions. In addition, in this case, the gas is sometimes distributed to the other portions in sequence. In addition, in the following embodiments, when blowing gas directly toward a specific portion of the peripheral portion of the substrate 230, such as a substrate, similar to the above-mentioned gas supply method, it is not necessary to blow gas directly to portions other than the specific portion.

[0124] Figure 11 This is a schematic cross-sectional view of the laminating unit 300 for explaining the operation of the laminating unit 300 in the gas control step. Figure 7 The status shown is Figure 11 As shown, the control device 50 operates the lifting drive unit 338 to raise the lower table 332, bringing the substrate 210 and the substrate 230 closer together. After a portion of the substrate 230 is brought into contact with a portion of the substrate 210 to form a contact area, the substrate 210 is released from the upper table 322 of the substrate holder 220, thereby generating a BW and expanding the contact area, thereby bonding the substrate 230 to the substrate 210.

[0125] The control device 50 supplies the gas from the gas supply section 350 to the space between the substrates 210, 230 also after the contact between the substrates 210, 230. The control device 50 also controls the supply conditions of the gas supplied after the contact between the substrates 210, 230 based on the measurement results measured with respect to the substrate 210, the substrate 230, or the substrate bonding device 100, as with before the contact between the substrates 210, 230.

[0126] The control device 50 according to the present embodiment supplies the gas to the space between the substrates 210, 230 until the contact area reaches the outer peripheral side of the substrates 210, 230 after the contact between the substrates 210, 230. The control device 50 according to the present embodiment also controls the supply conditions of the gas supplied to the space between the substrates 210, 230 until the contact area reaches the outer peripheral side based on the measurement results measured with respect to the substrate 210, the substrate 230, or the substrate bonding device 100.

[0127] As one example, the control device 50 according to the present embodiment supplies the gas at at least one of a relatively high supply flow rate, a relatively high supply pressure, and a relatively high temperature to a portion where the progress of the BW in the outer peripheral side of the substrates 210, 230 in the bonding process is relatively fast. This is because, as described above, the faster the BW progresses, the higher the risk of the adiabatic expansion gap.

[0128] As one example, the control device 50 according to the present embodiment supplies the gas toward a portion where the progress of the BW in the outer peripheral side of the substrates 210, 230 in the bonding process is relatively fast.

[0129] As one example, the control device 50 according to the present embodiment supplies the gas at at least one of a relatively high supply flow rate, a relatively high supply pressure, and a relatively high temperature to a substrate holding position in the substrate bonding device 100 corresponding to at least one of a portion where the gap is relatively likely to occur in the outer peripheral portion of the bonded substrates 210, 230, and a portion where the substrates are peeled apart after the bonding is released. As one example, the control device 50 according to the present embodiment supplies the gas toward a substrate holding position in the substrate bonding device 100 corresponding to at least one of a portion where the gap is relatively likely to occur in the outer peripheral portion of the bonded substrates 210, 230, and a portion where the substrates are peeled apart after the bonding is released, and even in these examples, the control device 50 performs feedback control in accordance with the bonding state between the substrates 210, 230 measured after the bonding.

[0130] In this case, feedback control can be performed when the adhered substrate 210, 230 is peeled off and adhered again, or feedback control can be performed when the substrate 210, 230 that is the next adherend is adhered. In the latter case, the control device 50 preferably performs feedback control on the substrate 210, 230 that is in the same batch as the adhered substrate 210, 230, for example, or on the substrate 210, 230 that is manufactured by the same manufacturing process. Further, the above-mentioned substrate holding position means a corresponding portion in the outer peripheral portion of the substrate 210, 230 held by the upper stage 322 and the lower stage 332 next time and after that. One example of the corresponding portion is a portion in which a groove is formed, a portion that opposes a hole formed for insertion of a lifting pin in the substrate holder 240 or the like, or the like.

[0131] According to the present embodiment described above, the control device 50 controls the supply condition of the gas supplied between the substrates 210, 230 before contact between the two substrates 210, 230 adhered to each other by the substrate adhering device 100. The control device 50 also controls the supply condition based on a measurement result measured with respect to the substrate 210, the substrate 230, or the substrate adhering device 100. Thus, the control device 50 can efficiently reduce the gap generated in the outer peripheral portion of the substrates 210, 230 to be adhered.

[0132] For example, the control device 50 acquires a measurement result indicating that one or both of the substrates 210 and 230 to be adhered is largely warped as a whole in a manner in which the adhering surface becomes concave, or a measurement result indicating that the film of the adhering surface of one or both of the substrates 210 and 230 to be adhered is hygroscopic. In this case, the control device 50 increases the supply flow rate of the gas supplied between the substrates 210, 230 to be adhered, or increases the supply pressure, or extends the supply time, according to the measurement result, and thus can increase the filling rate of the non-reactive gas, the gas subjected to humidity control, at least on the outer peripheral side between the substrates 210, 230 to be adhered. In addition, in the above case, the control device 50 can decrease the humidity or increase the temperature of the gas supplied between the substrates 210, 230 to be adhered according to the measurement result. In addition, in the above case, the control device 50 can additionally or alternatively decrease the discharge flow rate of the gas supplied between the substrates 210, 230 to be adhered according to the measurement result. It can be said that the control device 50 can efficiently reduce the gap generated in the outer peripheral portion of the substrates 210, 230 to be adhered by any of the methods.

[0133] Further, for example, the control device 50 acquires a measurement result indicating that the entire outer peripheral sag of one or both of the substrates 210 and 230 to be bonded has a large sag amount. In other words, a measurement result indicating that the risk of a gap occurring in the outer peripheral portion of the substrates 210 and 230 to be bonded is very low is acquired. In this case, the control device 50 reduces the supply flow rate of the gas supplied between the substrates 210 and 230 to be bonded, or lowers the supply pressure, or shortens the supply time, according to the measurement result, and thus can reduce the amount of use of the gas to reduce costs, or reduce the negative influence of the gas on other equipment. Further, in this case, the control device 50 lowers the temperature of the gas supplied between the substrates 210 and 230 to be bonded, that is, suppresses heating of the gas, according to the measurement result, and thus can reduce costs. It can be said that the control device 50 can efficiently reduce a gap occurring in the outer peripheral portion of the substrates 210 and 230 to be bonded by any of the methods.

[0134] Further, for example, the control device 50 acquires a measurement result indicating that a gap occurs in the outer peripheral portion of the substrates 210 and 230 to be bonded, or a measurement result indicating that peeling occurs in the CMP process. In this case, the control device 50 resets the supply flow rate of the gas supplied between the substrates 210 and 230 to be bonded, or raises the supply pressure, or extends the supply time, according to the measurement result, when the substrates 210 and 230 are bonded again, or when the substrates 210 and 230 that are the next bonding target are bonded, and thus can increase the filling rate of the non-reactive gas, the gas subjected to humidity control, at least on the outer peripheral side between the substrates 210 and 230 to be bonded next time and thereafter. Further, in the above case, the control device 50 can lower the humidity, or raise the temperature, of the gas supplied between the substrates 210 and 230 to be bonded next time and thereafter, according to the measurement result. Further, in the above case, the control device 50 can additionally or alternatively reduce the discharge flow rate of the gas supplied between the substrates 210 and 230 to be bonded next time and thereafter, according to the measurement result. It can be said that the control device 50 can efficiently reduce a gap occurring in the outer peripheral portion of the substrates 210 and 230 to be bonded next time and thereafter by any of the methods.

[0135] Further, for the laminated substrate 201 manufactured by bonding the substrates 210 and 230, there is a case where a portion on the central side from the position where the BW ends is used as a product, and a portion on the outer peripheral side from the position is not used as a product, and according to the control device 50, it is possible to reduce the risk of a gap occurring in the portion of the laminated substrate 201 used as a product, and thus it is possible to improve the yield of the product.

[0136] Further, the substrate attachment apparatus 100 can also measure at least any one of the shape of the thickness of the outer peripheral portion of the substrate 230 or the like, the shape of the warping of the outer peripheral portion of the substrate 230 or the like, the shape of the BW generated between the substrates 210, 230 in the attachment process, the shape of the gap generated in the outer peripheral portion of the attached substrates 210, 230, and the shape of the bonding between the attached substrates 210, 230. In this case, the control apparatus 50 can also acquire the result of the measurement from the substrate attachment apparatus 100. Further, instead of this, the control apparatus 50 can perform the measurement by itself.

[0137] The substrate 230 sometimes warps in-plane unevenly or warps uniformly over the entire plane. In addition, the amount of warping (the degree of warping) is sometimes an amount of warping inherent to each substrate 230 or the like or an amount of warping inherent to a group of a plurality of substrates 230 or the like, such as a batch in which a plurality of substrates 230 or the like are stacked for storage, a group that has undergone the same manufacturing process, a group of the same crystal orientation, or the like.

[0138] In a case where the degree of warping is inherent to each substrate 230, the degree of warping is measured, for example, before or after being carried into the substrate attachment apparatus 100. In a case where the degree of warping is inherent to each of a group of a plurality of substrates 230, the measurement result measured for the first substrate can be applied to the other substrates of the same group. As one example, the control apparatus 50 can also acquire, in advance for each group, information indicating a site where a gap is likely to be generated, and use the same gas supply method for a group of the same kind of plate, for a group of substrates having the same crystal orientation, or for a group of plates that have undergone the same manufacturing process.

[0139] Figure 12 is a schematic plan view for explaining gas supply modes (a) to (d) as one example in a case where the interval between the substrates 210, 230 in the attachment process is equal to or greater than a prescribed size. In addition, Figure 13 is a schematic plan view for explaining gas supply modes (a) to (b) as one example in a case where the interval between the substrates 210, 230 in the attachment process is less than a prescribed size.

[0140] The control device 50 according to the present embodiment controls the above-mentioned supply condition of the gas supplied from the gas supply portion 350 in accordance with at least any one of the interval between the substrates 210, 230 in the lamination process, and the relative position in the lamination direction of the upper work table 322 and the lower work table 332 that hold the substrates 210, 230 in the lamination process. The control device 50 according to the present embodiment can also be said to switch the supply condition of the gas supplied between the substrates 210, 230 in accordance with a change in the interval between the substrates 210, 230 that are laminated by the substrate lamination device 100. Further, switching the supply condition of the gas supplied between the substrates 210, 230 can also mean switching the supply condition of the gas while continuing to supply the gas between the substrates 210, 230. In this case, for example, the control device 50 can switch the supply condition of the gas in accordance with a change in the interval between the substrates 210, 230, on the premise that the gas is supplied from before the substrates 210, 230 come into contact with each other.

[0141] More specifically, the control device 50 supplies the gas in a manner that the gas flows between the portions where the gas comes into contact at the start of the formation of the central portion in the surface direction of the two substrates 210, 230, in at least any one of the case where the above-mentioned interval is equal to or greater than a prescribed size, and the case where the above-mentioned relative position is separated by equal to or greater than a prescribed size. In this case, in the case where the above-mentioned side flow flows unidirectionally within the lamination portion 300, the control device 50 supplies the gas from the upstream side of the side flow. At this time, the gas is also efficiently flowed into between the substrates 210, 230 by the influence of the side flow, and the atmosphere interposed between the substrates 210, 230 is replaced. Further, the prescribed size can be at least one of a size in which the gas can be filled or flowed into between the substrates 210, 230, a size in which the gas flow can be formed in the central portion of the substrates 210, 230, and a size in which the fluid between the substrates 210, 230 can be replaced by the gas, and is set in accordance with the kind of the gas flowed in, the material of the substrates, and the surrounding environment, and the like.

[0142] In Figure 12 One example of a mode in which the gas is supplied from the upstream side of the side flow in the case where the structure using a plurality of fixed pipe portions 321 according to the present embodiment is used is shown in FIG. 4. Figure 12 (a) of FIG. 4 shows a gas supply mode using a combination of the fixed pipe portion 321-3A and the fixed pipe portions 321-1A to 321-1D. Figure 12 (b) of FIG. 4 shows a gas supply mode using only the fixed pipe portions 321-2A to 321-2B. Figure 12 (c) of FIG. 4 shows a gas supply mode using a combination of the fixed pipe portion 321-3A and the fixed pipe portions 321-1A to 321-1B. Figure 12(d) indicates a gas supply mode in which only the fixed piping portion 321-1A to 321-1B is used.

[0143] In the present embodiment, the control device 50 preferably changes the fixed piping portion 321 from which gas is supplied, in accordance with the direction of the side flow, from among the 4 fixed piping portions 321-1A to 321-1D arranged at 90-degree intervals in four directions in the XY plane. The same applies to the 4 fixed piping portions 321-3A to 321-3D. Further, in a state in which the interval between the two substrates 210, 230 is large and no side flow is flowing, the control device 50 preferably supplies gas from an appropriate fixed piping portion 321 in order to form a flow in one direction between the substrates 210, 230 to be bonded. In this case, one or more gas recovery portions for recovering the gas can be formed in the upper stage 322, and the control device 50 can form a flow in one direction of the gas by recovering the gas flowing from the fixed piping portion 321 through the gas recovery portion.

[0144] The control device 50 according to the present embodiment also supplies gas from the gas supply portion 350 toward the periphery of the two substrates 210, 230 in at least either case of the case in which the interval described above is smaller than a prescribed size and the case in which the relative position described above is closer than a prescribed size. The periphery of the substrates 210, 230 described here can be the entire periphery of the substrates 210, 230 or a portion of the entire periphery of the substrates 210, 230. Thus, the control device 50 suppresses the flow of the gas described above between the two substrates 210, 230 out of the two substrates 210, 230. The control device 50 can also supply the gas toward the entire periphery of the substrates 210, 230 from at least either of the upper side, the lower side, and the side of the substrates 210, 230.

[0145] If the substrates 210, 230 approach each other, the gas from the gas supply portion 350 has difficulty flowing in the central portion in the direction of the faces of the two substrates 210, 230. Even in the case in which the side flow described above is flowing, if the substrates 210, 230 approach each other, the gas has difficulty flowing between the substrates 210, 230. Thus, the control device 50 suppresses the flow of the gas described above between the two substrates 210, 230 out of the two substrates 210, 230 by supplying the gas toward the periphery of the two substrates 210, 230.

[0146] In other words, the control device 50 supplies the above-described gas toward the periphery of the two substrates 210, 230 in a manner that leaves the above-described gas that has been filled between the substrates 210, 230 as much as possible between the substrates 210, 230. In addition, the control device 50 can also reduce the flow rate of the gas blown toward the substrates 210, 230, the upper stage 322, and the lower stage 332, compared to at least either of the case where the above-described interval is large and the case where the above-described relative position is distant, thereby reducing the vibration and the like of each stage caused by the gas flow.

[0147] In Figure 13 , one example of a mode of supplying the gas toward the entire periphery of the substrates 210, 230 from above or from the side of the substrates 210, 230 in the case where the structure using the plurality of fixed pipe portions 321 according to the present embodiment is used is shown.

[0148] Figure 13 (a) of shows a gas supply mode using only the fixed pipe portions 321-1A to 321-1D. The attachment portion 300 has the fixed pipe portions 321-2C and 321-2D disposed in the same positions as the fixed pipe portions 321-3C and 321-3D, respectively, in addition to the fixed pipe portions 321-2A and 321-2B. Figure 13 (b) of shows a gas supply mode using only the fixed pipe portions 321-2A to 321-2D. In addition, in the present embodiment, as shown in Figure 13 , the supply toward the side flow of the substrates 210, 230 can also be stopped in at least either of the case where the above-described interval is small and the case where the above-described relative position is close.

[0149] In the present embodiment, the case where the above-described interval is large or the case where the above-described relative position is distant can also mean the period until the timing of starting the start point formation operation for bringing the substrates 210, 230 to be attached into contact at only one portion. The start point formation operation mentioned here can also mean Figure 11The illustrated operation involves operating the lift drive 338 to raise the lower stage 332 and bring the substrates 210 and 230 closer together. In this case, the control device 50 may switch from supplying gas in a manner that creates a gas flow at least in the center between the two substrates 210 and 230 to supplying gas in a manner that inhibits the gas between the two substrates 210 and 230 from flowing out of the space between the two substrates 210 and 230 when the lower stage 332 begins to rise. Alternatively, the starting point formation operation may refer to an operation in which the substrate holder 220 releases the hold on the center of the substrate 210 while the substrates 210 and 230 are brought closer together, and / or an operation in which the substrate holder 220 deforms the center of the substrate 210 into a convex shape toward the substrate 230. As an example of the state in which the substrates 210 and 230 are brought closer together, the gap between the substrates 210 and 230 may be 70 μm. Alternatively, the starting point formation operation may refer to an operation in which the substrates 210 and 230 are brought into contact at only one location. The case where the above-mentioned interval is small, or the case where the above-mentioned relative positions are close, may also mean a period after the time when the starting point forming operation is started.

[0150] The laminating unit 300 of the substrate laminating apparatus 100 may also include an interferometer for measuring the gap between the substrates 210 and 230 during the laminating process. Additionally or alternatively, the laminating unit 300 may include a load cell for detecting changes in pressure applied to the upper worktable 322 or the lower worktable 332. In this case, the control device 50 may also obtain the measurement results from the substrate laminating apparatus 100. Alternatively, the control device 50 may perform the measurement itself.

[0151] In addition, when the upper stage 322 and the lower stage 332 are moved separately by sequential control without measuring the gap between the substrates 210 and 230 during the bonding process, it is preferable to control the gas according to the above relative positions. In addition, the upper stage 322 and the lower stage 332 are examples of two holding parts.

[0152] The control device 50 according to this embodiment may evenly supply the gas between the substrates 210 and 230 from the upstream side of the side flow in at least any one of the cases where the interval is large and the relative positions are far apart.

[0153] When the gas is controlled in this way, the control device 50 can also supply the gas at at least any one of a relatively large supply flow rate, a relatively high supply pressure, and a relatively high temperature to at least any one of a relatively small thickness portion and a relatively large warping amount portion in the peripheral portion of the substrates 210, 230 to be bonded, in at least any one of the above-mentioned small interval case and the above-mentioned close relative position case.

[0154] In addition, when the gas is controlled in this way, the control device 50 can also supply the gas toward at least any one of the peripheral portions of the substrates 210, 230 to be bonded, where the thickness is relatively small and the warping amount is relatively large, in at least any one of the above-mentioned cases where the interval is small and the above-mentioned cases where the relative position is close.

[0155] In addition, when the gas is controlled in this way, the control device 50 can also supply the gas at at least any one of a relatively large supply flow rate, a relatively high supply pressure, and a relatively high temperature to a portion where the BW on the peripheral side of the substrates 210 and 230 in the bonding process progresses relatively quickly in at least any one of the above-mentioned small interval situation and the above-mentioned close relative position situation.

[0156] In addition, when the gas is controlled in this way, the control device 50 can also supply the gas toward the part where the BW progresses relatively quickly on the peripheral side of the substrates 210 and 230 in the bonding process in at least any one of the above-mentioned cases where the interval is small and the above-mentioned case where the relative position is close.

[0157] In addition, when the gas is controlled in this way, the control device 50 can also be set to supply the gas at at least any one of a relatively large supply flow rate, a relatively high supply pressure, and a relatively high temperature at a substrate holding position in the substrate bonding device 100 corresponding to at least any one of a portion where relatively more gaps are generated in the peripheral portion of the bonded substrates 210, 230 and a portion where the bonding is released and peeled off, in at least any one of the above-mentioned small interval and close relative position cases.

[0158] In addition, when the gas is controlled in this way, the control device 50 can also supply the gas toward the substrate holding position in the substrate bonding device 100 corresponding to at least any one of the parts where relatively more gaps are generated in the peripheral part of the bonded substrates 210, 230 and the parts where the bonding is released and peeled off, in at least any one of the above-mentioned cases where the interval is small and the above-mentioned cases where the relative position is close.

[0159] In the above embodiment, when helium is used in the gas supply unit 350 and the bonding unit 300 of the substrate bonding apparatus 100 detects the position of the lower workbench 332 and the like by an interferometer, the control device 50 may sometimes generate a position measurement error caused by the fluctuation of the interferometer due to the presence of helium mixed with the atmosphere between the substrates 210 and 230. In order to reduce this position measurement error, it is preferred that gas is not supplied toward the space between the substrates 210 and 230 during the alignment process of the substrates 210 and 230. On the other hand, if a countermeasure is taken against the fluctuation of the interferometer, helium may be supplied into the bonding unit 300 during the alignment process of the substrates 210 and 230 or before the alignment process. An example of this countermeasure may be to correct the position measurement error caused by the fluctuation of the interferometer and to surround the optical path of the light from the interferometer with a tube. More specifically, a method for correcting position measurement errors can be employed to measure the helium concentration, refractive index, and other parameters in the atmosphere along the optical path of the light from the interferometer. Based on this measurement, a correction value is calculated, and this correction value is used to correct the position measurement value measured by the interferometer. Another example of this countermeasure is to use a side flow to blow away the leaked gas supplied between substrates 210 and 230, preventing it from leaking out of the space between substrates 210 and 230 and flowing into the optical path of the light from the interferometer. Using any of these countermeasures, the control device 50 can reduce the impact on production cycle time.

[0160] In the above embodiment, an example was described in which the control device 50 controls the substrates 210, 230 to be bonded to each other so as to increase the distance between the substrates 210, 230 held by the upper stage 322 and the lower stage 332 after the substrates 210, 230 to be bonded are brought face to face and before the atmosphere between the substrates 210, 230 to be bonded is replaced with gas from the gas supply unit 350. Alternatively, after the substrates 210, 230 to be bonded are brought face to face, the control device 50 may start supplying gas from the gas supply unit 350 into the bonding unit 300 before the substrates 210, 230 are brought face to face, without moving the lower stage 332 in the Z-axis direction.

[0161] More specifically, after the alignment process of the substrates 210 and 230 and before the substrates 210 and 230 are made to face each other, that is, Figure 3As shown, when substrates 210 and 230 are offset from each other in the XY plane, the control device 50 can also operate the cylinder unit 326 to lower the lifting arm unit 325 and the filling cover unit 327 toward the negative side in the Z-axis direction to a degree that the filling cover unit 327 does not hinder the movement of the lower worktable 332 holding the substrate 230. In this way, the filling cover unit 327 extends over the entire circumference of the substrate 210 held by the upper worktable 322, surrounding the substrate 210 from the side. At this time, the sealing member 328 preferably seals the lower surface of the top plate 343 of the filling cover unit 327 with the upper surface of the filling top plate 323.

[0162] In this state, the control device 50 may supply the gas from the gas supply unit 350 along the lower surface of the bonding surface of the substrate 210 via the fixed piping unit 321. As an example, the control device 50 may pass the gas along the back surface of the substrate holder 220 via the fixed piping units 321-1A to 321-1D, diffuse the gas radially outward, and fill the space between the substrate holder 220 and the filling cover 327 from above.

[0163] As another example, one or more gas recovery units for recovering the gas may be formed on the upper workbench 322. In this case, the control device 50 may also utilize the gas recovery unit to recover the gas flowing out from the fixed piping unit 321 located on the opposite side of the gas recovery unit in a manner that clamps the substrate 210 held on the upper workbench 322, thereby supplying the gas in a manner that allows the gas flow to flow along the lower surface of the substrate 210. In addition, in this case, the recovery port of the gas recovery unit is preferably located on the negative side of the Z-axis direction relative to the bonding surface of the substrate 210, and is located on the positive side of the Z-axis direction to the extent that it does not interfere with the lower workbench 332 that holds the substrate 230 and moves. In addition, these structures may also be turned upside down when the specific gravity of the gas is heavier than that of air.

[0164] In the above embodiment, the filling cover 327, when lowered to the most negative side in the Z-axis direction by the cylinder 326, surrounds the substrate holder 220 holding the substrate 210 and the substrate holder 240 holding the substrate 230. Alternatively, the filling cover 327 may surround only the substrate 210 held on the substrate holder 220 and the substrate 230 held on the substrate holder 240, that is, surround the vicinity of the outer peripheries of the substrates 210 and 230 facing each other.

[0165] Figure 14This is a schematic cross-sectional view illustrating a modified example of the gas supply method. The control device 50 according to this modified example uses a substrate holder 222 having a hanging portion 223 that laterally surrounds the substrate 210 held therein, extending over its entire circumference, and a substrate holder 242 having a recessed portion 243 having a shape complementary to that of the hanging portion 223 to accommodate at least the distal end of the hanging portion 223. While the substrate holder 222 and the upper stage 322 are separate components in this modified example, they may also be integrally formed.

[0166] The tip portion of the hanging portion 223 on the negative side in the Z-axis direction is preferably located on the negative side of the Z-axis relative to the bonding surface of the substrate 210, and on the positive side in the Z-axis direction to a degree that does not interfere with the lower stage 332 that moves while holding the substrate 230. Furthermore, the recessed portion 243 can be said to have the function of providing retraction for the hanging portion 223 when the bonding surfaces of the substrates 210 and 230 approach each other, that is, preventing the hanging portion 223 from interfering with the substrate holder 242. Alternatively, as an alternative to achieving this function, the hanging portion 223 of the substrate holder 222 may be configured to retract into the substrate holder 222 when the bonding surfaces of the substrates 210 and 230 approach each other. For example, the base portion of the hanging portion 223 in the Z-axis direction may be held by an elastic body such as a spring on the substrate holder 222, and the hanging portion 223 may be retracted into the substrate holder 222 when the front end portion of the hanging portion 223 in the Z-axis direction is pressed by the surface of the substrate holder 242. Alternatively, the hanging portion 223 may be movable in the Z-axis direction by a motor, and retracted under the control of the control device 50 so as to avoid contact with the surface of the substrate holder 242 when the bonding surfaces of the substrates 210 and 230 approach each other.

[0167] The substrate holder 222 includes one or more position measuring devices 370 fixed to predetermined positions on the outer periphery of the hanging portion 223. Similarly, the substrate holder 242 includes one or more position measuring devices 370 fixed to predetermined positions on the outer periphery of the recessed portion 243. Specifically, the hanging portion 223 is disposed between the position measuring devices 370 and the substrate 210. As an example, the position measuring devices 370 of each of the substrate holder 222 and the substrate holder 242 are interferometer mirrors. In this case, the negative Z-axis tip of the position measuring device 370 of the substrate holder 222 may be located closer to the positive Z-axis side than the negative Z-axis tip of the hanging portion 223 of the substrate holder 222. In other words, the height of the hanging portion 223 from the holding surface of the substrate holder 222 may be higher than the height of the position measuring device 370 from the holding surface of the substrate holder 222.

[0168] Furthermore, the position measuring device 370 of the substrate holder 222 and the position measuring device 370 of the substrate holder 242 may be replaced by an encoder or in addition to the interferometer mirror.

[0169] In addition, in this modification, one or more gas supply pipes 361 and one or more gas recovery pipes 362 are fixed to the top plate 316 of the laminating section 300 on the side of the upper stage 322 .

[0170] Furthermore, in this variation, one or more gas supply tubes 361 are each configured to have one end connected to the gas supply unit 350 and the other end connected to a hole formed in the hanging portion 223 of the substrate holder 222 held on the upper table 322 within the laminating section 300, and to be exposed laterally to the substrate 210 held on the substrate holder 222. The one or more gas supply tubes 361 are each capable of delivering gas supplied from the gas supply unit 350 to the laminating surface of the substrate 210 held on the substrate holder 222 within the laminating section 300. In this variation, one or more gas supply tubes 361 are each provided with a flow rate adjustment valve at the aforementioned end, allowing the flow rate of the gas supplied to the laminating section 300 to be adjusted individually or collectively by the gas supply unit 350.

[0171] In addition, the other end of one or more gas supply pipes 361 can also be connected to the hole formed in the substrate holder 222 between the hanging part 223 of the substrate holder 222 and the substrate 210, and exposed on the side of the substrate 210 held by the substrate holder 222.

[0172] In addition, in this variation, one or more gas recovery pipes 362 are respectively configured to be connected to the gas supply part 350 at one end and to be connected to a hole formed in the hanging part 223 of the substrate holder 222 held on the upper workbench 322 within the bonding part 300 at the other end, and are exposed on the side of the substrate 210 held on the substrate holder 222.

[0173] The one or more gas recovery pipes 362 can respectively recover the gas flowing on the bonding surface of the substrate 210 and send it to the gas supply unit 350. In this variation, the one or more gas recovery pipes 362 are respectively provided with a flow rate adjustment valve at one end, and the flow rate of the gas recovered from the bonding surface of the substrate 210 is adjusted individually or collectively by the gas supply unit 350.

[0174] In the overhang 223, the other end of the one or more gas recovery pipes 362 is preferably located on the opposite side of the other end of the one or more gas supply pipes 361 in a manner of sandwiching the substrate 210 held by the substrate holder 222. Thus, the control device 50 can effectively cause the gas to flow downward along the bonding surface of the substrate 210 by recovering the gas flowing out from the other end of the one or more gas supply pipes 361 through the other end of the one or more gas recovery pipes 362.

[0175] As one example of the countermeasure against the fluctuation of the interferometer, the control device 50 according to the present modified example can also use the substrate holder 222, the substrate holder 242, the one or more gas supply pipes 361, the one or more gas recovery pipes 362, and the one or more position measurers 370 having the above-described structures. Further, these structures can be upside down in the case where the specific gravity of the gas is higher than that of air.

[0176] In addition, the control device 50 according to the present modified example can start to supply the gas from the gas supply part 350 into the bonding part 300 before the substrates 210, 230 are brought into face-to-face relation, and form a state in which the gas flows on the bonding surface of the substrate 210. In this case, the control device 50 can cause the gas to flow on the bonding surface of the substrate 210 in order to bond the substrates 210, 230 to each other after the substrates 210, 230 are brought into face-to-face relation, as shown by the black arrows in FIG. 17. Figure 14 In addition, the control device 50 according to the present modified example can start to supply the gas from the gas supply part 350 into the bonding part 300 before the substrates 210, 230 are brought into face-to-face relation, and form a state in which the gas flows on the bonding surface of the substrate 210. In this case, the control device 50 can cause the gas to flow on the bonding surface of the substrate 210 in order to bond the substrates 210, 230 to each other after the substrates 210, 230 are brought into face-to-face relation, as shown by the black arrows in FIG. 17.

[0177] Thus, in the case where the gas is caused to flow on the bonding surface of the substrate 210 before the substrates 210, 230 are brought into face-to-face relation, and a state in which the gas is left on the bonding surface of the substrate 210 is formed, the control device 50 preferably causes the gas to flow from the other end of the one or more gas supply pipes 361 toward the bonding surface of the substrate 210 in the same direction as the direction in which the lower stage 332 is moved in the XY plane in order to bring the substrates 210, 230 into face-to-face relation, as shown by the black arrows in FIG. 18. Figure 14 Thus, in the case where the gas is caused to flow on the bonding surface of the substrate 210 before the substrates 210, 230 are brought into face-to-face relation, and a state in which the gas is left on the bonding surface of the substrate 210 is formed, the control device 50 preferably causes the gas to flow from the other end of the one or more gas supply pipes 361 toward the bonding surface of the substrate 210 in the same direction as the direction in which the lower stage 332 is moved in the XY plane in order to bring the substrates 210, 230 into face-to-face relation, as shown by the black arrows in FIG. 18.

[0178] In the above embodiment, the upper surface of the filling top plate 323 and the lower surface of the top plate 343 of the filling cover 327 are sealed by the sealing member 328, assuming that the specific gravity of the gas supplied from the gas supply unit 350 into the laminating unit 300 is lighter than that of air. If the specific gravity of the gas supplied from the gas supply unit 350 into the laminating unit 300 is heavier than that of air, a filling bottom plate located on the negative side of the bottom surface of the substrate holder 240 in the Z-axis direction may be used in place of the filling top plate 323, and the upper surface of the filling bottom plate and the lower surface of the bottom plate 345 of the filling cover 327 may be sealed by the sealing member 328.

[0179] Alternatively, if the specific gravity of the gas is lighter than that of air, one end of the fixed piping portion 321 may be fixed to the substrate holder 220 so that the end is exposed on the surface of the substrate holder 220 that holds the substrate 210. Alternatively, if the specific gravity of the gas is heavier than that of air, one end of the fixed piping portion 321 may be fixed to the substrate holder 240 so that the end is exposed on the surface of the substrate holder 240 that holds the substrate 230. In either case, by connecting the one end of the fixed piping portion 321 to the outer peripheral portions of the substrates 210 and 230 in the substrate holder 220 and the substrate holder 240, respectively, the gas can be discharged toward the outer peripheries of the substrates 210 and 230.

[0180] Alternatively, the laminating unit 300 may be configured to supply gas from the gas supply unit 350 from both the upper and lower sides of the upper stage 322 and the lower stage 332. For example, the control device 50 may supply the gas between the substrates 210 and 230 to be laminated from below the substrate 210, etc., from both above and below the substrate 210, etc., from both above and sides of the substrate 210, etc., from both below and sides of the substrate 210, etc., or from all of above, below, and sides of the substrate 210, etc. By supplying the gas from multiple directions in this manner, the control device 50 may be able to shorten the time required to fill the space between the substrates 210 and 230 with gas, for example.

[0181] In the above embodiment, the filling cover 327 can also be heated by a heater. This can increase not only the temperature of the gas supplied from the gas supply unit 350 to the bonding unit 300, but also the temperature of the side stream flowing toward the substrates 210 and 230 to be bonded, thereby suppressing the formation of adiabatic expansion gaps.

[0182] In the above embodiment, among the substrates 210 and 230 to be bonded by the substrate bonding apparatus 100, the substrate having a relatively convex bonding surface in a cross section perpendicular to the bonding surface is preferably held on the upper worktable 322 side and released toward the other substrate held on the lower worktable 332 side. This can appropriately expand the space between the substrates during BW.

[0183] In the above embodiment, the laminating unit 300 or the control device 50 may also include a humidity monitor capable of measuring at least the humidity of the space inside the filling cover 327. The control device 50 may also determine that the atmosphere between the substrates 210 and 230 to be laminated has been replaced with the gas from the gas supply unit 350 based on the measurement results of the humidity monitor, for example, if the humidity in the space is below a predetermined threshold. Additionally or alternatively, the laminating unit 300 or the control device 50 may also include a monitor capable of measuring at least the temperature, air pressure, etc. of the space inside the filling cover 327. In this case, the control device 50 may also determine that the atmosphere between the substrates 210 and 230 to be laminated has been replaced with the gas from the gas supply unit 350, or that a condition where an adiabatic expansion gap is unlikely to form, based on the measurement results of the monitor, for example, if the temperature or air pressure in the space is below a predetermined threshold.

[0184] In the above embodiment, the control device 50 can also use a test substrate with multiple humidity sensors distributed on the bonding surface to pre-confirm the appropriate humidity balance and gas filling time between the substrates to be bonded. When bonding the substrates 210 and 230 used as products, the gas is controlled in the same manner based on the confirmation results of the test substrate.

[0185] In the above embodiment, the control device 50 can also control the gas supplied from the gas supply part 350 into the bonding part 300 only in any of the following cases: when the interval between the substrates 210 and 230 in the bonding process is large, and when the relative positions of the upper workbench 322 and the lower workbench 332 holding the substrates 210 and 230 in the bonding process are far apart in the bonding direction.

[0186] In the above embodiment, the control device 50 may determine to remove a substrate from the lamination target when determining that the substrate is below a predetermined reference based on the measurement result acquired before the substrate lamination step.

[0187] In the above embodiment, the control device 50 is described as a separate structure from the substrate attachment device 100. Alternatively, the control device 50 can be integrated in the substrate attachment device 100, in other words, the substrate attachment device 100 can be provided with the control device 50, and the substrate attachment device 100 can be provided with a control section that performs a part of the function of the control device 50, in which case the control device 50 can or can not perform the function.

[0188] In the above embodiment, the configuration in which the substrate 210 held on the upper stage 322 side is released toward the substrate 230 held on the lower stage 332 side is mainly described, but it can be reversed, that is, the substrate 230 held on the lower stage 332 side can be released toward the substrate 210 held on the upper stage 322 side. In addition, the substrate holders 220, 240 can be supplied with negative pressure from the upper stage 322 and the lower stage 332, respectively, or can be provided with a pump that supplies negative pressure.

[0189] The various embodiments of the present application can be described with reference to flow charts and block diagrams that illustrate the architecture, functionality, and operation of possible implementations of systems, methods and computer program products according to various embodiments of the present application. Each block shown in the flow charts and block diagrams and combinations of blocks in the flow charts and block diagrams can be implemented by hardware, software, or both. The various embodiments of the present application can be directed, in some cases, to a device or apparatus that includes means for performing the operations of the various embodiments of the present application. The means can be hardware such as (1) code that is stored in storage and executed by a processor, (2) code that is stored in storage and executed by a processor, or (3) hardware alone. The various embodiments of the present application can also be embodied in computer readable medium that include computer readable code. In some cases, the computer readable code can be downloaded over a network from computer program product to a remote computer (e.g., from an app store to a user's device).

[0190] The computer readable medium can include any tangible device that can store instructions that are executed by a proper apparatus and as a result, the computer readable medium having stored therein the instructions of the tangible device will have a product of manufacture that includes the executable instructions to make means for performing the operations specified (by the flowchart or block diagram). Examples of computer readable medium can include electronic storage media, magnetic storage media, optical storage media, electromagnetic storage media, semiconductor storage media, etc. More specific examples of the computer readable medium can include floppy disks (registered trademark), diskettes, hard disks, random access memories (RAM), read-only memories (ROM), erasable programmable read-only memories (EPROM or flash memory), electrically erasable programmable read-only memories (EEPROM), static random access memories (SRAM), compact discs read-only memories (CD-ROM), digital versatile discs (DVDs), Blu-ray (RTM) discs, memory sticks, integrated circuits, etc.

[0191] The computer readable instructions can include any one of assembly instructions, instruction-set-architecture (ISA) instructions, machine instructions, machine dependent instructions, microcode, firmware instructions, state-setting data, or any combination of one or more programming languages, including object-oriented programming languages such as Smalltalk (registered trademark), JAVA (registered trademark), C++, and conventional procedural programming languages such as "C" programming language or the same programming language, described in any combination of source code or object code.

[0192] The computer readable instructions can be provided to a processor or programmable circuit of a general purpose computer, a special purpose computer, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor or programmable circuit, generate a means for performing the operations specified (by the flowchart or block diagram). Examples of the processor can include a computer processor, a processing unit, a microprocessor, a digital signal processor, a controller, a microcontroller, etc.

[0193] Figure 15This represents an example of a computer 1200 capable of embodying, in whole or in part, various aspects of the present invention. Programs installed on computer 1200 can cause computer 1200 to function as an operation associated with an apparatus according to an embodiment of the present invention or as one or more "units" of such an apparatus, or to execute such an operation or one or more "units," and / or to execute a process or a stage of such a process according to an embodiment of the present invention. Such programs can be executed by CPU 1212 to cause computer 1200 to perform specific operations associated with some or all of the blocks in the flowcharts and block diagrams described in this specification.

[0194] The computer 1200 according to this embodiment includes a CPU 1212, a RAM 1214, a graphics controller 1216, and a display device 1218, which are interconnected via a main controller 1210. The computer 1200 also includes input / output units such as a communication interface 1222, a hard disk drive 1224, a DVD-ROM drive 1226, and an IC card drive, which are connected to the main controller 1210 via an input / output controller 1220. The computer also includes conventional input / output units such as a ROM 1230 and a keyboard 1242, which are connected to the input / output controller 1220 via an input / output chip 1240.

[0195] The CPU 1212 controls each unit by operating according to programs stored in the ROM 1230 and the RAM 1214. The graphics controller 1216 acquires image data generated by the CPU 1212 from a frame buffer provided in the RAM 1214 or from the graphics controller 1216 itself, and displays the image data on the display device 1218.

[0196] The communication interface 1222 communicates with other electronic devices via a network. The hard disk drive 1224 stores programs and data used by the CPU 1212 in the computer 1200. The DVD-ROM drive 1226 reads programs or data from the DVD-ROM 1201 and provides the programs or data to the hard disk drive 1224 via the RAM 1214. The IC card drive reads programs and data from an IC card and / or writes programs and data to an IC card.

[0197] The ROM 1230 internally stores a startup program executed by the computer 1200 upon activation, and / or programs that depend on the hardware of the computer 1200. The input / output chip 1240 can also connect various input / output units to the input / output controller 1220 via a parallel port, a serial port, a keyboard port, a mouse port, and the like.

[0198] The program is provided on a computer-readable storage medium such as a DVD-ROM 1201 or an IC card. The program is read from the computer-readable storage medium, installed on the hard disk drive 1224, RAM 1214, or ROM 1230, also examples of computer-readable storage media, and executed by the CPU 1212. The information processing described in these programs is read by the computer 1200, resulting in collaboration between the program and the various types of hardware resources described above. A device or method can be constructed by implementing information manipulation or processing based on the use of the computer 1200.

[0199] For example, when communication is performed between the computer 1200 and an external device, the CPU 1212 can execute a communication program loaded into the RAM 1214 and, based on the processing described in the communication program, instruct the communication interface 1222 to perform communication processing. Under the control of the CPU 1212, the communication interface 1222 reads transmission data stored in a transmission buffer provided in the RAM 1214, the hard disk drive 1224, the DVD-ROM 1201, or a recording medium such as an IC card, and transmits the read transmission data to the network or writes received data from the network to a reception buffer provided on the recording medium.

[0200] Furthermore, the CPU 1212 can cause the RAM 1214 to read all or a required portion of a file or database stored in an external recording medium such as the hard disk drive 1224, the DVD-ROM drive 1226 (DVD-ROM 1201), or an IC card, and can perform various types of processing on the data in the RAM 1214. The CPU 1212 can then write the processed data back to the external recording medium.

[0201] Various types of programs, data, tables, and various types of information such as databases can be stored in the recording medium for information processing. CPU1212 can perform various types of processing described in various places of this disclosure, including various types of operations specified by the instruction sequence of the program, information processing, conditional judgment, conditional branching, unconditional branching, information search / replacement, etc., on the data read from RAM1214, and write the results back to RAM1214. In addition, CPU1212 can also search for information in files, databases, etc. in the recording medium. For example, in the case where a plurality of entries each having an attribute value of a first attribute associated with an attribute value of a second attribute are stored in the recording medium, CPU1212 can search for an entry that is consistent with the condition specifying the attribute value of the first attribute from among the plurality of entries, read the attribute value of the second attribute stored in the entry, and thereby obtain the attribute value of the second attribute associated with the first attribute that meets the predetermined condition.

[0202] The programs or software modules described above may be stored in a computer-readable storage medium on or near the computer 1200. Alternatively, a recording medium such as a hard disk or RAM provided in a server system connected to a dedicated communication network or the Internet may be used as a computer-readable storage medium, thereby providing the program to the computer 1200 via the network.

[0203] While the present invention has been described above using embodiments, the scope of protection of the present invention is not limited to the scope described in the above embodiments. It is clear to those skilled in the art that various modifications or improvements can be made to the above embodiments. It is clear from the claims that such modifications or improvements are also within the scope of protection of the present invention.

[0204] It should be noted that the order in which actions, processes, steps, and stages, etc., of the devices, systems, programs, and methods described in the claims, specifications, and drawings may be executed in any order, unless otherwise specified, such as "prior to," "before," or "before," and unless the output of a preceding process is used in a subsequent process. The use of phrases such as "first" and "next" to describe the flow of actions in the claims, specifications, and drawings for convenience does not necessarily imply that the actions must be executed in that order.

[0205] Explanation of reference numerals: 10...substrate laminating unit; 50...control device; 100...substrate laminating device; 110...housing; 120, 130...substrate cassette; 140...conveying portion; 170...activating device; 201...stacked substrate; 210, 230...substrate; 220, 222, 240, 242...substrate holder; 223...hanging portion; 241...wall portion; 243...recessed portion; 300...laminating portion 310...frame; 312...bottom plate; 316...top plate; 321, 321-1A, 321-1B, 321-1C, 321-1D, 321-2A, 321-2B, 321-3A, 321-3B, 321-3C, 321-3D...fixed piping; 322...upper workbench; 323...filling top plate; 324, 334...microscope; 325...lifting arm; 326...cylinder; 327. ..Filling cover; 328...Sealing member; 331...X-direction drive unit; 332...Lower worktable; 333...Y-direction drive unit; 338...Lifting drive unit; 341...Sidewall; 343...Top plate; 345...Bottom plate; 350...Gas supply unit; 361...Gas supply pipe; 362...Gas recovery pipe; 370...Position measuring device; 400...Rack storage; 500...Pre-aligner; 1200...Computer; 1201...DVD-ROM; 1210...Main controller; 1212...CPU; 1214...RAM; 1216...Graphics controller; 1218...Display device; 1220...I / O controller; 1222...Communication interface; 1224...Hard disk drive; 1226...DVD-ROM drive; 1230...ROM; 1240...I / O chip; 1242...Keyboard.

Claims

1. A control device for controlling supply conditions of gas supplied between two substrates bonded to each other by a substrate bonding device, wherein: The two substrates are bonded to each other by forming a contact area at the center and then expanding the contact area. The supply condition is controlled based on a measurement result of at least one of the thickness of the peripheral portion in at least one of the two substrates, the expanded form of the contact area between the two substrates, the form of the gap generated between the two substrates, and the form of the bonding of the two substrates.

2. The control device according to claim 1, wherein: The supply condition is at least one of a supply flow rate, a supply pressure, a supply time, a supply direction, a humidity, a temperature of the gas toward the space between the substrates, and a discharge flow rate from the space between the substrates.

3. The control device according to claim 1, wherein: The measurement result further includes a shape of warpage of the outer peripheral portion of at least one of the two substrates.

4. The control device according to claim 3, wherein: The gas is supplied to at least any one of the portion with relatively small thickness and the portion with relatively large warping amount in the peripheral portion of the substrate at at least any one of a relatively large supply flow rate, a relatively high supply pressure, and a relatively high temperature.

5. The control device according to claim 3, wherein: The gas is supplied toward at least one of the portion having a relatively small thickness and the portion having a relatively large warping amount in the outer peripheral portion of the substrate.

6. The control device according to claim 1, wherein: The gas is supplied to a portion of the contact area where the expansion progresses relatively quickly at at least one of a relatively large supply flow rate, a relatively high supply pressure, and a relatively high temperature.

7. The control device according to claim 1, wherein: The gas is supplied toward the enlarged, relatively faster-moving portion of the contact area.

8. The control device according to claim 1, wherein: The gas is supplied at at least one of a relatively large supply flow rate, a relatively high supply pressure and a relatively high temperature to the substrate holding position in the substrate bonding device corresponding to at least any one of a portion where relatively more gaps are generated and a portion where the bonding is released and peeled off.

9. The control device according to claim 1, wherein: The gas is supplied toward a substrate holding position in the substrate bonding apparatus corresponding to at least one of a portion where relatively many gaps are generated and a portion where the bonding is released and peeled.

10. The control device according to claim 1, wherein: The measurement result includes at least one of a distance between the substrates in a step of laminating the two substrates and relative positions of two holding portions holding the substrates in the step of laminating the two substrates.

11. The control device according to claim 10, wherein: In at least one of the case where the gap is larger than a predetermined size and the case where the relative positions are separated by a predetermined size or larger, the gas is supplied to at least the center in the plane direction between the two substrates. In at least either one of a case where the interval is smaller than a predetermined size and a case where the relative positions are smaller than a predetermined size and closer to each other, the gas is supplied around the two substrates.

12. The control device according to claim 11, wherein: In at least either one of the case where the interval is larger than a predetermined size and the case where the relative positions are separated by a predetermined size or larger, the gas is supplied from the upstream side of an air flow that flows unidirectionally from the sides of the two substrates toward the two substrates.

13. The control device according to claim 11, wherein: In at least any one of the cases where the interval is smaller than a specified size and where the relative position is smaller than a specified size but close, the gas is supplied toward the entire circumference of the two substrates from at least any one direction above, below, or to the side of the two substrates.

14. The control device according to claim 1, wherein: The two holding portions holding the substrates to be bonded are also controlled so that after the substrates to be bonded face each other, the gap between the substrates held by the two holding portions is widened before the gas is replaced with the atmosphere between the substrates to be bonded.

15. The control device according to claim 1, wherein: The gas is supplied between the two substrates before contact between the two substrates.

16. A control device for controlling supply conditions of gas supplied between two substrates bonded to each other by a substrate bonding device. The two substrates are bonded to each other by forming a contact area at the center and then expanding the contact area. The supply condition is switched according to a change in the distance between the two substrates.

17. The control device according to claim 16, wherein: The gas is supplied between the two substrates before contact between the two substrates.

18. A substrate laminating device, wherein: A control device according to claim 1 is provided.

19. A control method for controlling supply conditions of a gas supplied between two substrates bonded to each other by a substrate bonding apparatus. The two substrates are bonded to each other by forming a contact area at the center and then expanding the contact area. The control method includes a stage of controlling supply conditions based on at least one measurement result of the thickness of the peripheral portion of at least one of the two substrates, the expansion of the contact area between the two substrates, the gap generated between the two substrates, and the bonding form of the two substrates.

20. A computer-readable medium having a program recorded thereon, wherein when executed by a computer, the program causes the computer to execute a control method, wherein supply conditions of a gas supplied between two substrates bonded to each other by a substrate bonding apparatus are controlled, wherein: The two substrates are bonded to each other by forming a contact area at the center and then expanding the contact area. The control method includes a stage of controlling supply conditions based on at least one measurement result of the thickness of the peripheral portion of at least one of the two substrates, the expansion of the contact area between the two substrates, the gap generated between the two substrates, and the bonding form of the two substrates.

Images