Inspection apparatus and processing system

Abstract

The inspection device includes: a laser irradiation unit that irradiates a wafer with laser light; a display that displays information; and a control unit that performs: deriving an estimated processing result that includes information on a modified region formed on the wafer and a crack extending from the modified region when the wafer is irradiated with laser light by the laser irradiation unit in accordance with a set recipe (processing condition); and controlling the display to display an estimated processing result image in which an image of the wafer is depicted together with an image of the modified region and the crack of the wafer, in consideration of a position on the wafer of the modified region and the crack that are derived as the estimated processing result.

Description

Technical Field

[0001] One aspect of the present invention relates to an inspection device and a processing system. Background Technology

[0002] Inspection apparatuses are known to individually cut wafers having a semiconductor substrate and a functional element layer formed on one surface of the semiconductor substrate along multiple lines, and to form multiple rows of modified regions inside the semiconductor substrate by irradiating the wafer with a laser from the other side of the semiconductor substrate. The inspection apparatus described in Patent Document 1 includes an infrared camera, which can observe the modified regions formed inside the semiconductor substrate and processing damage formed in the functional element layer from the back side of the semiconductor substrate.

[0003] [Existing technical documents]

[0004] [Patent Literature]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 2017-64746 Summary of the Invention

[0006] [The problem the invention aims to solve]

[0007] In the aforementioned inspection apparatus, before irradiating the wafer with a laser (to perform laser processing on the wafer), it is necessary to determine the processing conditions, including the laser irradiation conditions, based on the wafer information and the laser processing target. To ideally determine the processing conditions, it is necessary, for example, for the user to repeatedly perform laser processing while adjusting the processing conditions to guide the appropriate processing conditions. Therefore, it is required to efficiently determine these processing conditions and facilitate processing.

[0008] One aspect of the present invention is an invention developed in view of the above circumstances, the purpose of which is to provide an inspection device and processing system that can efficiently determine processing conditions and easily perform processing as desired by the user.

[0009] [Technical means to solve the problem]

[0010] An inspection apparatus according to one aspect of the present invention includes: an irradiation unit for irradiating a wafer with a laser; a display unit for displaying information; and a control unit configured to: derive an estimated processing result, the estimated processing result including information on modified regions and cracks extending from the modified regions, the modified regions being formed on the wafer when the wafer is irradiated with a laser by the irradiation unit according to set processing conditions; and control the display unit to consider the positions of the modified regions and cracks on the wafer derived as the estimated processing result, and display an image of the wafer along with an image of the modified regions and cracks on the wafer. Figure 1 The same as the estimated processing result image depicted.

[0011] In one aspect of the inspection apparatus of the present invention, considering the estimated processing results, an image of the wafer is displayed along with images of the modified areas and cracks of the wafer. Figure 1 The image depicts an estimated processing result, which includes information about the modified regions formed on the wafer by laser irradiation under set processing conditions, and the cracks extending from these modified regions. Thus, by displaying the estimated processing result image, the user is informed how the wafer will be processed (how the modified regions and cracks will be formed) when processing is performed according to the set processing conditions. This allows the user to visually confirm the estimated processing result image and then decide whether to proceed directly with the actual processing or change the processing conditions. This enables efficient determination of processing conditions and facilitates the processing as desired by the user.

[0012] The aforementioned inspection device may also include an input unit that receives information for setting processing conditions. The input unit receives information for setting processing conditions from the input unit, and the control unit sets the processing conditions based on the information received from the input unit. Therefore, since the processing conditions are set based on information received from the user, appropriate processing conditions can be set considering, for example, information about the wafer and the target for laser processing on the wafer.

[0013] Alternatively, the control unit can control the display unit, linking and displaying the processing conditions and estimated processing result images together. This allows the user to be visually informed about the processing conditions under which processing was performed and the resulting processing outcome.

[0014] Alternatively, it can be an input unit that, while displaying an estimated processing result image on the display unit, receives first correction information as a correction to the modified area and crack location shown in the estimated processing result image. The control unit corrects the estimated processing result based on the first correction information and adjusts the processing conditions to form a corrected estimated processing result. It then controls the display unit to associate the corrected processing conditions with the estimated processing result image based on the corrected estimated processing result and display them together. Therefore, processing conditions can be easily corrected based on correction instructions from a user who has confirmed the estimated processing result image. For the user, if a correction instruction for the estimated processing result image is issued to achieve the desired processing result, the processing conditions can be automatically adjusted to meet the correction instruction, thus making it easy to perform the desired processing.

[0015] Alternatively, the input unit can display the status of the processing conditions on the display unit, receive input of second correction information related to the correction of the processing conditions, the control unit can correct the processing conditions based on the second correction information, and then correct the estimated processing result based on the corrected processing conditions. The control unit then controls the display unit to associate and display the corrected processing conditions with the estimated processing result image based on the corrected estimated processing result. Therefore, processing conditions can be easily corrected based on correction instructions from the user, and the estimated processing result image as the corrected processing conditions can be appropriately displayed.

[0016] The aforementioned inspection device may also include a camera unit for imaging the wafer, and a control unit that further performs the following: controlling the irradiation unit to irradiate the wafer with laser light to form modified regions and cracks extending from the modified regions on the wafer; controlling the camera unit to output light that is transparent to the wafer to image the wafer, obtaining laser processing results including information on the modified regions formed on the wafer by laser irradiation and the cracks extending from the modified regions; and controlling the display unit to correlate the estimated processing result image with the laser processing result and display them together. Thus, the image of the processing estimated from the processing conditions is displayed together with the actual laser processing result, making it easy for the user to determine whether to change the processing conditions.

[0017] It can also be a control unit or a control display unit that displays an estimated processing result image of a cross-section perpendicular to the laser-irradiated processing line. This allows the user to confirm the estimated processing result image of a cross-section perpendicular to the processing line.

[0018] It can also be a control unit or a control display unit that displays an estimated processing result image of a horizontal cross-section of the laser-irradiated processing line. This allows the user to confirm the estimated processing result image of a horizontal cross-section of the processing line.

[0019] An inspection apparatus according to one aspect of the present invention includes: an irradiation unit for irradiating a wafer with a laser; and a control unit that performs: deriving an estimated processing result, the estimated processing result including information on modified regions and cracks extending from the modified regions, the modified regions being formed on the wafer when the wafer is irradiated with a laser by the irradiation unit according to set processing conditions; and considering the positions of the modified regions and cracks on the wafer derived as the estimated processing result, outputting an image of the wafer along with an image of the modified regions and cracks on the wafer. Figure 1 The estimated processing result image is depicted. Therefore, even if the inspection device does not have a display unit, the estimated processing result image can be displayed by an external device that can communicate with the inspection device.

[0020] One aspect of the present invention is a processing system that communicates between an inspection device and a display device. The inspection device outputs an estimated processing result including information about modified regions formed when a wafer is irradiated with a laser according to set processing conditions, and cracks extending from the modified regions. Taking into account the locations of the modified regions and cracks on the wafer derived as the estimated processing result, the inspection device outputs an image of the wafer along with an image of the modified regions and cracks on the wafer to the display device. Figure 1 The display device displays the estimated processing result image output by the inspection device, along with the image depicted in the drawing. Based on such a processing system, the estimated processing result image output by the inspection device can be appropriately displayed on the display device.

[0021] An inspection apparatus according to one aspect of the present invention includes: an irradiation unit for irradiating a wafer with a laser; a display unit for displaying information; and a control unit configured to perform: deriving an estimated processing result, the estimated processing result including information on modified regions and cracks extending from the modified regions, the modified regions being formed on the wafer when the irradiation unit irradiates the wafer with a laser according to set processing conditions; and controlling the display unit to display the estimated processing result information.

[0022] [Invention Effects]

[0023] According to one aspect of the present invention, processing conditions can be determined efficiently, and the processing desired by the user can be easily carried out. Attached Figure Description

[0024] Figure 1 This is a structural diagram of an inspection device according to one embodiment.

[0025] Figure 2 This is a plan view of a wafer according to one embodiment.

[0026] Figure 3 for Figure 2 A cross-sectional view of a portion of the wafer shown.

[0027] Figure 4 To display Figure 1 The diagram shows the configuration of the laser irradiation unit.

[0028] Figure 5 To display Figure 1 The diagram shown illustrates the configuration of the inspection camera unit.

[0029] Figure 6 To display Figure 1 The diagram shows the configuration of the camera unit used for alignment correction.

[0030] Figure 7 To illustrate, such as Figure 5The diagram shows a cross-sectional view of the wafer of the inspection camera unit and images of the inspection camera unit at various locations.

[0031] Figure 8 To illustrate, such as Figure 5 The diagram shows a cross-sectional view of the wafer of the inspection camera unit and images of the inspection camera unit at various locations.

[0032] Figure 9 SEM images of the modified regions and cracks formed inside the semiconductor substrate.

[0033] Figure 10 SEM images of the modified regions and cracks formed inside the semiconductor substrate.

[0034] Figure 11 To illustrate, such as Figure 5 The diagram shows the optical path of the camera unit for inspection and a schematic diagram of the image at the focal point of the camera unit.

[0035] Figure 12 To illustrate, such as Figure 5 The diagram shows the optical path of the camera unit for inspection and a schematic diagram of the image at the focal point of the camera unit.

[0036] Figure 13 This is an example of a screen for setting up wafer fabrication information.

[0037] Figure 14 This is an example of a screen for setting up wafer fabrication information.

[0038] Figure 15 This is an example of a screen for setting up wafer fabrication information.

[0039] Figure 16 This is a diagram used to illustrate the setup for completing the cross-section.

[0040] Figure 17 This is a diagram used to illustrate recipe selection from a database.

[0041] Figure 18 This is a diagram used to illustrate the selection of multiple recipes from a database.

[0042] Figure 19 This is an example of a display screen showing the estimated processing result image.

[0043] Figure 20 This is a diagram used to illustrate the estimated processing result image.

[0044] Figure 21 This is a diagram used to illustrate the estimated processing result image.

[0045] Figure 22 A derived diagram illustrating wafer thickness.

[0046] Figure 23 This is an example of a database derived from wafer thickness.

[0047] Figure 24 This is an example of a screen displaying the judgment result (NG).

[0048] Figure 25 This is an example of a screen displaying the judgment result (OK).

[0049] Figure 26 This is a flowchart of the inspection method.

[0050] Figure 27 This is a schematic diagram of the inspection device for a modified example.

[0051] Figure 28 This is a diagram illustrating the configuration of the processing system for a modified example. Detailed Implementation

[0052] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Furthermore, in the drawings, the same or equivalent parts will be given the same reference numerals, and repeated descriptions will be omitted.

[0053] [Structure of the inspection device]

[0054] like Figure 1 As shown, the inspection apparatus 1 includes: a stage 2; a laser irradiation unit 3 (irradiation section); multiple camera units 4, 5, and 6; a drive unit 7; a control unit 8; and a display 150 (input section and display section). The inspection apparatus 1 is a device for forming a modified region 12 on a workpiece 11 by irradiating the workpiece 11 with a laser L.

[0055] The mounting stage 2 supports the object 11, for example, by adsorbing and attaching a film to the object 11. The mounting stage 2 can move along the X and Y directions and rotate about an axis parallel to the Z direction as its center line. Furthermore, the X and Y directions are mutually perpendicular first and second horizontal directions, and the Z direction is a vertical direction.

[0056] The laser irradiation unit 3 focuses a transmissive laser L onto the object 11. If the laser L is focused inside the object 11 supported on the stage 2, the laser L will be absorbed at the point corresponding to the focusing point C, thus forming a modified region 12 inside the object 11.

[0057] The modified region 12 is a region whose density, refractive index, mechanical strength, and other physical properties differ from the surrounding unmodified region. The modified region 12 may have, for example, a melt-processed region, a cracked region, an insulation-damaged region, or a refractive index-changing region. The modified region 12 has the characteristic that cracks easily extend from the modified region 12 toward the side where the laser L is incident and to the opposite side. This characteristic of the modified region 12 is utilized in the cutting of the object 11.

[0058] As an example, if the stage 2 is moved along the X direction, and the focusing point C is moved relative to the object 11 along the X direction, then multiple modified particles 12s are formed in a row along the X direction. Each modified particle 12s is formed by irradiation with a single pulse of laser L. A row of modified regions 12 is a collection of multiple modified particles 12s arranged in a row. Adjacent modified particles 12s can be connected or separated depending on the relative movement speed of the focusing point C relative to the object 11 and the repetition frequency of the laser L.

[0059] The camera unit 4 can capture images of the modified region 12 formed on the object 11 and the front end of the crack extending from the modified region 12.

[0060] Under the control of the control unit 8, camera units 5 and 6 capture images of the object 11 supported on the platform 2 using light transmitted through the object 11. The images obtained by camera units 5 and 6 are used, for example, to align the position of the laser L.

[0061] The drive unit 7 supports the laser irradiation unit 3 and multiple camera units 4, 5, and 6. The drive unit 7 moves the laser irradiation unit 3 and the multiple camera units 4, 5, and 6 along the Z direction.

[0062] The control unit 8 controls the operation of the stage 2, the laser irradiation unit 3, the multiple camera units 4, 5, and 6, and the drive unit 7. The control unit 8 is configured as a computer device including a processor, memory, storage, and communication devices. In the control unit 8, the processor executes software (programs) loaded in the memory, etc., controls the reading and writing of data in the memory and storage, and controls communication through the communication devices.

[0063] The display 150 has the functions of an input section for receiving information from a user and a display section for displaying information to a user.

[0064] [Structure of the object]

[0065] like Figure 2 and Figure 3As shown, the object 11 in this embodiment is a wafer 20. The wafer 20 includes a semiconductor substrate 21 and a functional element layer 22. Furthermore, in this embodiment, the wafer 20 is described with the functional element layer 22, but the wafer 20 may or may not have the functional element layer 22, and may also be a bare wafer. The semiconductor substrate 21 has a surface 21a (second surface) and a back surface 21b (first surface). The semiconductor substrate 21 is, for example, a silicon substrate. The functional element layer 22 is formed on the surface 21a of the semiconductor substrate 21. The functional element layer 22 includes a plurality of functional elements 22a arranged in two dimensions along the surface 21a. The functional elements 22a are, for example, light-receiving elements such as light-emitting diodes, light-emitting elements such as laser diodes, and circuit elements such as memory. The functional elements 22a are stacked in multiple layers to form a three-dimensional structure. Furthermore, the semiconductor substrate 21 has a notch 21c for indicating the crystal orientation, but an orientation plane may be provided instead of the notch 21c.

[0066] The wafer 20 is cut into individual functional elements 22a along a plurality of lines 15. The plurality of lines 15, viewed from the thickness direction of the wafer 20, pass between each of the functional elements 22a. More specifically, the lines 15, viewed from the thickness direction of the wafer 20, pass through the center (center in the width direction) of the dicing region 23. The dicing region 23 extends in the functional element layer 22, passing between adjacent functional elements 22a. In this embodiment, the plurality of functional elements 22a are arranged in a matrix along the surface 21a, and the plurality of lines 15 are set in a lattice pattern. Furthermore, the lines 15 are imaginary lines, but could also be actually drawn lines.

[0067] [Structure of the laser irradiation unit]

[0068] like Figure 4 As shown, the laser irradiation unit 3 includes a light source 31, a spatial light modulator 32, and a focusing lens 33. The light source 31 outputs laser light L via, for example, pulse oscillation. The spatial light modulator 32 modulates the laser light L output from the light source 31. The spatial light modulator 32 is, for example, a spatial light modulator (SLM) of a reflective liquid crystal on silicon (LCOS). The focusing lens 33 focuses the laser light L modulated by the spatial light modulator 32. Alternatively, the focusing lens 33 can also be a correction ring lens.

[0069] In this embodiment, the laser irradiation unit 3 irradiates the wafer 20 with laser L from the back surface 21b side of the semiconductor substrate 21 along multiple lines 15, forming two rows of modified regions 12a and 12b inside the semiconductor substrate 21 along the multiple lines 15. Modified region 12a is the modified region closest to surface 21a among the two rows of modified regions 12a and 12b. Modified region 12b is the modified region closest to modified region 12a and closest to the back surface 21b among the two rows of modified regions 12a and 12b.

[0070] The two rows of modified regions 12a and 12b are adjacent in the thickness direction (Z direction) of the wafer 20. The two rows of modified regions 12a and 12b are formed by moving two focusing points C1 and C2 relative to each other along line 15 relative to the semiconductor substrate 21. The laser L is modulated by a spatial light modulator 32, for example, with focusing point C2 located behind the focusing point C1 in the travel direction and on the incident side of the laser L. Furthermore, the formation of the modified regions can be single-focus or multi-focus, and can be single-pass or multiple-pass.

[0071] The laser irradiation unit 3 irradiates the wafer 20 with laser L from the back side 21b of the semiconductor substrate 21 along multiple lines 15. For example, for a single-crystal silicon substrate (semiconductor substrate 21) with a thickness of 775 μm, two focusing points C1 and C2 are aligned with positions of 54 μm and 128 μm from the surface 21a, respectively, and laser L is irradiated towards the wafer 20 from the back side 21b of the semiconductor substrate 21 along multiple lines 15. For example, assuming that the cracks 14 covering the two columns of modified regions 12a and 12b reach the surface 21a of the semiconductor substrate 21, the wavelength of laser L is 1099 nm, the pulse width is 700 nm, and the repetition frequency is 120 kHz. Furthermore, the output of laser L at focusing point C1 is 2.7 W, the output of laser L at focusing point C2 is 2.7 W, and the relative moving speed of the two focusing points C1 and C2 relative to the semiconductor substrate 21 is 800 mm / s.

[0072] The formation of the two rows of modified regions 12a and 12b and the crack 14 is carried out in the following situation. That is, in a subsequent process, for example, the semiconductor substrate 21 is thinned by grinding the back side 21b of the semiconductor substrate 21 and the crack 14 is exposed on the back side 21b, and the wafer 20 is cut into multiple semiconductor devices along multiple lines 15 respectively.

[0073] [Inspection of the structure of the camera unit]

[0074] like Figure 5As shown, the imaging unit 4 (imaging section) includes a light source 41, a mirror 42, an objective lens 43, and a light detection unit 44. The imaging unit 4 captures images of the wafer 20. The light source 41 outputs light I1 that is transmissive to the semiconductor substrate 21. The light source 41 is configured, for example, by a halogen lamp and a filter, and outputs light I1 in the near-infrared region. The light I1 output from the light source 41 is reflected by the mirror 42 and passes through the objective lens 43, and then illuminates the wafer 20 from the back side 21b side of the semiconductor substrate 21. At this time, the stage 2 supports the wafer 20, on which two rows of modified regions 12a and 12b are formed, as described above.

[0075] Objective lens 43 allows light I1 reflected from the surface 21a of semiconductor substrate 21 to pass through. In other words, objective lens 43 allows light I1 propagating on semiconductor substrate 21 to pass through. The numerical aperture (NA) of objective lens 43 is, for example, 0.45 or higher. Objective lens 43 has a correction ring 43a. The correction ring 43a corrects aberrations generated by light I1 within semiconductor substrate 21, for example, by adjusting the distance between the multiple lenses constituting objective lens 43. Furthermore, the means of correcting aberrations is not limited to the correction ring 43a; other correction means such as a spatial light modulator can be used. Light detection unit 44 detects light I1 passing through objective lens 43 and mirror 42. Light detection unit 44 is configured, for example, using an InGaAs camera, to detect light I1 in the near-infrared region. Furthermore, the means of detecting (imaging) light I1 in the near-infrared region is not limited to an InGaAs camera; other imaging means can be used, such as a transmission-type confocal microscope capable of transmission-type imaging.

[0076] Camera unit 4 can capture images of the front ends of the two rows of modified regions 12a and 12b, and multiple cracks 14a, 14b, 14c, and 14d (details to be described later). Crack 14a is a crack extending from modified region 12a toward surface 21a. Crack 14b is a crack extending from modified region 12a toward back surface 21b. Crack 14c is a crack extending from modified region 12b toward surface 21a. Crack 14d is a crack extending from modified region 12b toward back surface 21b.

[0077] [Structure of the camera unit for alignment correction]

[0078] like Figure 6 As shown, the imaging unit 5 includes a light source 51, a mirror 52, a lens 53, and a light detection unit 54. The light source 51 outputs light I2 that is transmissive to the semiconductor substrate 21. The light source 51 is configured, for example, by using a halogen lamp and a filter, and outputs light I2 in the near-infrared region. The light source 51 may also be common to the light source 41 of the imaging unit 4. The light I2 output from the light source 51 is reflected by the mirror 52 and passes through the lens 53, and then illuminates the wafer 20 from the back side 21b of the semiconductor substrate 21.

[0079] Lens 53 allows light I2 reflected from the surface 21a of the semiconductor substrate 21 to pass through. In other words, lens 53 allows light I2 propagating on the semiconductor substrate 21 to pass through. The numerical aperture of lens 53 is 0.3 or less. That is, the numerical aperture of the objective lens 43 of the imaging unit 4 is larger than the numerical aperture of lens 53. Light detection unit 54 detects the light I2 passing through lens 53 and mirror 52. Light detection unit 55, for example, is configured using an InGaAs camera, and detects light I2 in the near-infrared region.

[0080] Under the control of the control unit 8, the imaging unit 5 irradiates the wafer 20 with light I2 from the back side 21b and detects the light I2 returning from the surface 21a (functional element layer 22), thereby capturing an image of the functional element layer 22. Similarly, under the control of the control unit 8, the imaging unit 5 irradiates the wafer 20 with light I2 from the back side 21b and detects the light I2 returning from the formation locations of the modified regions 12a and 12b of the semiconductor substrate 21, thereby acquiring an image of the region including the modified regions 12a and 12b. These images are used for alignment of the irradiation position of the laser L. The imaging unit 6 has the same structure as the imaging unit 5, except that it has a lower magnification than the lens 53 (for example, 6x in the imaging unit 5, 1.5x in the imaging unit 6), and is used for alignment in the same way.

[0081] [Inspection of the camera unit's imaging principle]

[0082] Use such as Figure 5 The camera unit 4 shown is as follows: Figure 7 As shown, for the semiconductor substrate 21 where the cracks 14 extending from the modified regions 12a and 12b in the two columns reach the surface 21a, the focal point F (the focal point of the objective lens 43) is moved from the back side 21b towards the surface 21a. In this case, if the focal point F is aligned with the tip 14e of the crack 14 extending from the modified region 12b towards the back side 21b from the back side 21b side, then the tip 14e ( Figure 7 (Image on the right). However, even when the focal point F is aligned with the crack 14 itself and the front end 14e of the crack 14 reaching the surface 21a from the back side 21b, they cannot be confirmed ( Figure 7 (Image on the left). Furthermore, if the focal point F is aligned with the surface 21a of the semiconductor substrate 21 from the back side 21b, the functional element layer 22 can be identified.

[0083] Use such as Figure 5 The camera unit 4 shown is as follows: Figure 8As shown, for a semiconductor substrate 21 where the cracks 14 covering the two columns of modified regions 12a and 12b do not reach the surface 21a, the focal point F is moved from the back side 21b towards the surface 21a. In this case, if the focal point F is aligned with the tip 14e of the crack 14 extending from the modified region 12a towards the surface 21a from the back side 21b, it is also impossible to confirm that the tip 14e ( Figure 8 (Image on the left). However, by aligning the focal point F from the back side 21b with the area opposite to the back side 21b for the surface 21a (i.e., the area on the functional element layer 22 side for the surface 21a), and by placing the virtual focal point Fv symmetrical to the focal point F at the front end 14e for the surface 21a, it can be confirmed that the front end 14e ( Figure 8 (Image on the right). Furthermore, the virtual focus Fv is a point symmetrical with respect to the focus F of the semiconductor substrate 21, taking into account the refractive index of the surface 21a.

[0084] As mentioned above, the crack 14 itself cannot be identified because the width of the crack 14 is smaller than the wavelength of the illumination light, i.e., light I1. Figure 9 and Figure 10 The image is a SEM (Scanning Electron Microscope) image of the modified region 12 and the crack 14 formed inside the semiconductor substrate 21 on the silicon substrate. Figure 9 (b) is Figure 9 (a) is an enlarged view of region A1 shown in the diagram. Figure 10 (a) is Figure 9 (b) is an enlarged view of region A2 shown in the diagram. Figure 10 (b) is Figure 10 (a) is an enlarged view of region A3. Thus, the width of the crack 14 is about 120 nm, which is smaller than the wavelength of light I1 in the near-infrared region (e.g., 1.1 to 1.2 μm).

[0085] The camera principle assumed based on the above content is as follows. Figure 11 As shown in (a), if the focal point F is located in the air, then light I1 cannot return, thus resulting in a darker image. Figure 11 (a) The image on the right). Figure 11 As shown in (b), if the focal point F is located inside the semiconductor substrate 21, the light I1 reflected at the surface 21a returns, thus obtaining a whiter image. Figure 11 (b) The image on the right). Figure 11 As shown in (c), if the focal point F is aligned with the modified region 12 from the back side 21b, then the modified region 12 absorbs and scatters a portion of the light I1 reflected back from the surface 21a, thus obtaining an image in which the modified region 12 appears darker against a white background. Figure 11(c) The image on the right).

[0086] like Figure 12 As shown in (a) and (b), if the focal point F is aligned with the front end 14e of the crack 14 from the back side 21b, then, based on the optical specificities generated near the front end 14e (stress concentration, strain, atomic density discontinuity, etc.) and the light confinement generated near the front end 14e, a portion of the light I1 reflected back from the surface 21a undergoes scattering, reflection, interference, absorption, etc., thus obtaining an image in which the front end 14e appears darker against a white background. Figure 12 (Images to the right of (a) and (b)). Figure 12 As shown in (c), if the focal point F is aligned with the portion other than the front end 14e of the crack 14 from the back side 21b, at least a portion of the light I1 reflected on the surface 21a is returned, thus obtaining a whiter image. Figure 12 (c) The image on the right).

[0087] [Processing Conditions Export Processing]

[0088] The following describes the pretreatment process for creating modified regions for purposes such as dicing wafer 20. Processing conditions refer to the processing formula that displays the conditions and sequence under which wafer 20 is processed. The control unit 8 executes the following: Based on information received from the display 150, it determines the processing conditions, including the irradiation conditions of the laser through the laser irradiation unit 3 (processing condition determination process); under the determined processing conditions, it controls the laser irradiation unit 3 to irradiate the wafer 20 with laser (processing process); it controls the imaging unit 4 to capture an image of the wafer 20 and obtain the laser processing result of the irradiated wafer 20 (processing result acquisition process); based on the laser processing result, it evaluates the processing conditions (processing condition evaluation process).

[0089] (Processing conditions determine the treatment)

[0090] Reference Figures 13-21 The process involves determining processing conditions. First, the display 150 receives information about the wafer 20 and user input containing wafer processing information for the laser processing target of the wafer 20. The laser processing target refers to information displaying the content of the laser processing desired by the user. Figures 13-15 This is an example of a setup screen (screen for receiving user input) that displays wafer processing information on the display 150. Figure 13 This is a screen for setting the processing method (the information contained in the aforementioned laser processing target). Figure 14 This is the screen for setting up wafer information (the information contained in the aforementioned wafer 20 information). Figure 15This is a settings screen for processing (information contained in the aforementioned laser processing target). Here, the processing method ( Figure 13 ), wafer information ( Figure 14 ), processing settings ( Figure 15 This example illustrates the measurement process using the order shown, but the order in which these settings (screen display order) are implemented is not limited to this.

[0091] like Figure 13 As shown, the display 150 initially receives user input regarding the processing method. Processing methods generally include, for example, SDAG (Stealth Dicing After Grinding) and SDBG (Stealth Dicing Before Grinding). SDAG is a processing method that performs stealth dicing after wafer 20 grinding. SDBG is a processing method that performs stealth dicing before wafer 20 grinding. SDAG, more specifically, can be divided into three categories: SDAG (Surface Injection), SDAG (Back Injection), and SDAG (Separator Tape Processing). SDAG (Surface Injection) is a processing method where a laser is irradiated from the surface 21a side after wafer 20 grinding. It can be used in situations where there is no TEG on the injection surface of MEMS, etc., and where street width can be ensured. SDAG (Back Injection) is used when there is TEG on surface 21a and the street width needs to be reduced. SDAG (Separator Tape Processing) is used when the tape transfer process needs to be reduced. SDBG, more specifically, can be divided into two categories: SDBG (surface injection) and SDBG (backside injection). The following explanation will use SDBG (backside injection) as an example of a processing method.

[0092] like Figure 14As shown, the display 150 then receives user input regarding wafer information. Wafer information may include, for example, wafer thickness, finished thickness, wafer type, surface mount condition, resistance value (doping level), index size (ch1), and index size (ch2). Among these, wafer thickness and finished thickness are not necessarily required. The wafer thickness displays information about the thickness of wafer 20. Wafer thickness may include, for example, the thickness of both the semiconductor substrate 21 (silicon) and the functional element layer 22 (pattern) of wafer 20. Furthermore, the wafer thickness can also be set separately for silicon wafer thickness and pattern thickness. The finished thickness displays information about, for example, the thickness of wafer 20 after grinding. That is, grinding is performed using a grinding machine until the finished thickness is achieved. After grinding using the grinding machine, tape transfer and extension processes are then performed. Furthermore, if the stealth dicing device and the grinding device (grinding machine) can communicate with each other, the finished thickness information can be shared between the two devices. The finished thickness can be, for example, the thickness of both the semiconductor substrate 21 (silicon) and the functional element layer 22 (pattern) of the wafer 20. Furthermore, the finished thickness can also be set separately for the silicon wafer thickness and the pattern thickness. Information such as the pattern thickness and the layered structure can be used, for example, when the control unit 8 estimates the length of the crack 14. Alternatively, a grinding amount can be set instead of the finished thickness.

[0093] The wafer type is, for example, a [0°] product or a [45°] product corresponding to the notch position. For example, if the wafer type is set to 45°, BHC is recommended in the BHC state of the processing settings described later. [BHC (Bottom sidehalf-cut)] refers to the state where the crack 14 reaches the surface 21a (i.e., the crack reaches the state). Furthermore, for BHC, it is sufficient for the crack 14 to reach the surface 21a, regardless of whether it reaches the patterned surface (the surface of the functional element layer 22). For example, if the wafer type is set to 0°, both ST and BHC are recommended in the BHC state of the processing settings described later. [ST (Stealth)] refers to the state where the crack 14 does not reach the back side 21b and the surface 21a. The state of the injection surface displays information such as the film type (refractive index) and film thickness of the injection surface. The laser output is determined by the control unit 8 by calculating the reflectivity based on the state of the injection surface and the laser wavelength. The resistance value (doping level) is the value of the resistance (in the case of doping level, it is the value converted from the doping level to the resistance value). Based on the resistance value and laser wavelength, the control unit 8 calculates the reach rate and determines the laser output. The index size is used to determine information such as the index value of the cutting machine. Furthermore, when processing an unknown wafer 20, since the wafer type, the state of the injection surface, and the resistance value are unknown, it is not necessary to set these parameters.

[0094] like Figure 15As shown, the display 150 then receives user input regarding the processing settings. Furthermore, some of the various information regarding the processing settings can be automatically set based on the aforementioned processing method and wafer information. For example, processing settings may include BHC state (crack arrival information), Si allowance (information displaying the assumed extension amount of the crack), number of passes, speed, finished profile, and sputtering range. Among these, setting the BHC state is not always necessary. The BHC state displays information on either BHC or ST. That is, the BHC state displays information on whether the crack extending from the modified region formed when the wafer 20 is irradiated with a laser has reached or not reached the surface 21a of the wafer 20. In the BHC state, if ST is set, the aforementioned Si allowance can be set. The Si allowance is the length from the arrival position of the crack 14 after ST processing to the surface 21a (the length of the remaining silicon portion after ST processing). In the case of ST processing, in order to finally cleave the wafer 20, the crack 14 needs to be extended during grinding until it reaches the BHC state before the extended process. Users typically determine the extent to which the crack 14 extends due to grinding. For example, the extension amount of the crack 14 in the grinding machine is determined by the number of stages in the Z-height of the processing depth (height) during laser processing. That is, the user determines the assumed extension amount of the crack 14 in the grinding machine by the number of stages in the Z-height, such as [Z1 amount] (depth amount of 1 stage in the Z-height) and [Z2 amount] (depth amount of 2 stages in the Z-height). Therefore, when performing ST processing, by setting the assumed extension amount of the crack 14 in the grinding machine (number of stages in the Z-height) as the Si allowance, the advantages of ST processing (increased processing speed or reduced spatter) can be enjoyed, and the wafer 20 can be reliably diced. When setting the Z-height during laser processing, the offset from the position that becomes BHC towards the ST direction (the direction in which the crack 14 shortens) is equivalent to the Z-height set by the Si allowance. The database described later (a database that corresponds and stores wafer processing information with processing conditions (formulas)) may also store formulas containing Si allowances. Furthermore, the Si allowance can also be calculated from the wafer thickness and Z-height by measuring the amount of cracks, for example, in the ST state.

[0095] The pass count displays information about the number of passes and the number of focal points. The user sets the desired pass count. If processing cannot be performed at the set pass count, the control unit 8 can increase the pass count when proposing processing conditions (recipes) to the user or when modifying the processing conditions (recipes). Furthermore, if the various wafer processing information received by the control unit 8 through the display 150 is unsuitable, the control unit 8 can control the display 150 to display a message urging correction. Speed ​​refers to the laser processing speed. The control unit 8 considers the set speed and determines the laser output, frequency, and pulse spacing. If processing cannot be performed at the set speed, the control unit 8 can change the speed when proposing processing conditions (recipes) to the user or when modifying the processing conditions (recipes). The splatter range displays information about the width of the splatter. If the splatter range is narrow, the control unit 8 determines the Z-height or pulse spacing to enter the ST state, or determines processing conditions that produce black stripes.

[0096] The completed profile display shows whether the chip profile (the completed profile of wafer 20) after laser processing and finishing (grinding) is present, indicating the state of the modified region (SD (Stealth Dicing) layer) formed when the wafer 20 is irradiated with a laser. In SDBG, since grinding is performed after laser processing, depending on the conditions, it is possible to ensure no SD layer remains on the chip profile. By ensuring no SD layer remains on the chip profile, the chip's strength can be improved, and particle counts can be reduced. For information on setting the [No SD Layer] condition on the completed profile, please refer to... Figure 16 Explanation will be provided. In Figure 16 (a)~ Figure 16 (d) SD1 displays the modified area. Now, in the processing settings, it is considered to be the completed profile setting on display 150 [without SD layer]. In this case, as... Figure 16 As shown in (a), the control unit 8 determines the processing conditions to set SD1, making the length (distance from the lower end of SD1 to the surface 21a) longer than the finished thickness set in the wafer information. Now, when... Figure 16 (b) As shown in the left figure, when the crack length is longer than the distance from the lower end of SD1 in the case of BHC, or, as Figure 16 (b) As shown in the right figure, when the ST state is reached, and the total length of the crack length and Si allowance is longer than the distance from the lower end of SD1, the control unit 8 can determine that the [no SD layer] setting can be achieved in the completed cross-section. Furthermore, when... Figure 16 (c) shows that, for example, when the ST state is being performed, if the total length of the crack length and the Si allowance is shorter than the distance to the lower end of SD1, the control unit 8 can determine that the [no SD layer] cannot be set in the completed profile. In this case, the control unit 8 can switch the completed profile to [with SD layer]. Alternatively, based on the user's judgment, the completed profile can be switched to [with SD layer].

[0097] like Figure 15 As shown, on the processing setting input screen, you can choose whether to perform two items: [Display / Confirm Recipe Before Processing] and [Confirm Processing Results Before Recipe Correction]. The recipe refers to the information displayed regarding the processing conditions. If [Display / Confirm Recipe Before Processing] is selected, and the recipe (processing conditions) is determined by the control unit 8, the recipe will be displayed before laser processing. If [Display / Confirm Recipe Before Processing] is not selected, and the recipe (processing conditions) is determined by the control unit 8, the recipe will not be displayed, and laser processing will begin. If [Confirm Processing Results Before Recipe Correction] is selected, the actual processing results will be displayed before recipe correction (or recipe confirmation). If [Confirm Processing Results Before Recipe Correction] is not selected, and the actual processing results will not be displayed after processing is complete, and recipe correction (or recipe confirmation) will be performed. By pressing... Figure 15 The [Recipe Creation] shown is executed through the recipe decision process of the control unit 8.

[0098] The control unit 8 receives wafer processing information (in the display 150) based on the wafer processing information received from the display 150. Figures 13-15 The control unit 8 determines a formula (processing conditions) including the irradiation conditions of the laser through the laser irradiation unit 3, based on various information received from the setting screen. The control unit 8 determines the formula (processing conditions) corresponding to the wafer processing information received through the display 150 by referring to a database that stores wafer processing information corresponding to formulas (processing conditions). More specifically, the control unit 8 can determine the formula corresponding to the wafer processing information received through the display 150 by a computer program based on an algorithm generated from the database and a feedback control program referring to the database. The database may be possessed by the inspection device 1 or by an external device (network server) capable of communicating with the inspection device 1. For example, depending on the location where the inspection device 1 is installed, there may be cases where the inspection device 1 cannot connect to the network. Even in such cases, the control unit 8 can perform the database function on the inspection device 1 by using a database containing applications installed on electronic media (DVD, CD, USB memory, SD card, etc.). In this structure, although it's impossible to connect to a database centrally managed by a network server, individual database management within inspection device 1 allows for continuous updates by collecting feedback from specific users, thus focusing on and continuously improving inspection accuracy. Furthermore, with the database residing on a network server, centralized database management becomes easier, and inspection functions utilizing the database (user DB) can be widely provided through web applications, the release of Web APIs, and the distribution of native applications. Additionally, by continuously updating the database by collecting feedback from a large number of users, the accuracy of inspections can be comprehensively and continuously improved. Figure 17This is a diagram used to illustrate recipe selection from a database. Furthermore, Figure 17 This is merely a diagram illustrating the determination of processing conditions (recipes) using a database, and does not actually display the information stored in the database. For example, in Figure 17 The system displays estimated processing results images for each formulation (described later). In practice, images may not need to be stored in the database. The formulation may include laser irradiation conditions (laser conditions) such as laser wavelength, pulse width, frequency, and speed; processing point settings / LBA settings such as the number of focal points, correction levels for spherical aberration and astigmatism in the focusing state of the processing point, etc.; and Z-height when the modified region is formed, etc.

[0099] like Figure 17 As shown, the database stores recipes (processing conditions) corresponding to each wafer processing information. The control unit 8 matches the wafer processing information (input information) received via the display 150, selecting the recipe from the stored wafer processing information that corresponds to the wafer processing information most closely related to the input information as the proposed recipe. Furthermore, the matching process can be performed using AI (Artificial Intelligence). Now, as... Figure 17 As shown, the input information includes [Wafer thickness: 775μm], [Finished thickness: 50μm], [Wafer type: 45°], [Injection surface condition: SiO2 film 50nm], [Resistance (doping level): 1Ω·cm], [Processing method: SDBG (back side)], [BHC state: BHC], [Number of passes: 2 focal points 1 pass], [Speed: 800mm / sec], [Finished profile: No SD layer], and [Sputtering range: Sputtering ±30μm]. In this case, the control unit 8 refers to the database and selects the formulation (leftmost formulation) with the following settings as wafer processing information: [Wafer thickness 775μm], [Finished thickness ~60μm], [BHC condition], [2 focal points 1 pass], [800mm / sec], [No SD layer], and [Sputtering ±10].

[0100] If there is a difference (parameter offset) between the wafer processing information of the proposed formula selected by the control unit 8 during the aforementioned matching process and the wafer processing information of the input information, the control unit 8 can calculate / simulate to correct the parameter offset and determine the corrected formula as the proposed formula. For example, the control unit 8 can correct the Z-height according to the difference in wafer thickness when the wafer thicknesses are different, correct the laser output according to the difference in resistance values ​​when the resistance values ​​are different, correct the laser frequency according to the difference in speed when the speeds are different, and correct the number of focal points according to the difference in the number of passes when the number of passes is different.

[0101] The control unit 8, by referring to a database, extracts multiple candidate processing conditions (recipes) corresponding to the received wafer processing information, and controls the display 150 to display these multiple candidate recipes. Figure 18 In the example shown, the control unit 8 selects three candidate formulations. Additionally, the input information is the same as described above. Figure 17 The same example applies. Additionally, extract the most recommended formula (in... Figure 18 The text contains recipes that are recommended in Proposal 1, and recipes that prioritize assembly line (tact) processes. Figure 18 The text contains recipes for "[Proposal 2: Prioritizing Flow Processing]" and recipes prioritizing segmentation boundaries. Figure 18 The document contains recipes with the [Proposal 3: Prioritize Segmentation Boundaries] attribute. The most recommended recipes are those with the highest degree of matching with the input information (wafer processing information). Recipes prioritized for assembly line operations are those with high matching with the input information (wafer processing information) and high speed. Figure 18 The flow-line priority formulation is faster at 1000mm / sec than other formulations. Formulations prioritizing slitting boundaries include those with a high degree of matching with input information (wafer processing information) and a large number of focal points. Figure 18 The formulation with priority given to segmentation boundaries has more focal points (3 focal points) than other formulations. Thus, by extracting multiple formulation candidates and displaying them on the display 150, the user can select the desired formulation. Furthermore, the control unit 8 can also extract multiple formulation candidates from viewpoints other than the aforementioned recommendations, flow-line priority, and segmentation boundary priority, for example, from the viewpoint of quality priority (suppressing snake-like behavior or suppressing particulate matter).

[0102] The control unit 8 can also export the matching degree between multiple recipe candidates and the received wafer processing information (input information), and control the display 150 to display multiple recipe candidates in a display format considering the matching degree. Specifically, the control unit 8 can also control the display 150 to, for example, display the matching degree of multiple recipe candidates, or distinguish and display recipe candidates with high matching degree from recipe candidates with low matching degree. In addition, the control unit 8 can also control the display 150 to display a recommended order corresponding to the matching degree of multiple recipe candidates. Furthermore, the control unit 8 can also control the display 150 to display various information (recipe characteristics) of the material used by the user to select a recipe from multiple recipe candidates.

[0103] The display 150 shows multiple recipe candidates and receives user input to select one recipe candidate. Additionally, the control unit 8 can also determine the recipe candidate selected by the user input received through the display 150 as the recipe (processing conditions).

[0104] The control unit 8 can also further execute the control display 150 to display the determined formula (processing conditions). Figure 19 This is an example of a display screen showing the estimated processing result image (described later). For example... Figure 19 As shown, if a proposed formulation is determined, the content of the proposed formulation, along with the received wafer processing information (input information) and an estimated processing result image (described later), are displayed on screen 150. The displayed content of the proposed formulation may also be information included as part of the determined formulation (processing conditions). That is, for the formulation, parameters not displayed to the user but kept internally may also be present. Figure 19 The example shown, as part of the proposed formulation, displays information such as laser irradiation conditions (laser conditions), including wavelength (level 9), pulse width (level 7), frequency (level 12), speed (800 mm / sec), processing point setting / LBA setting, i.e., number of focal points (2-focal processing), and the Z height (Z173, Z155) of the two modified areas SD1 and SD2.

[0105] The control unit 8 can also, based on the determined formula (processing conditions), export an estimated processing result of the situation where the wafer 20 is irradiated with laser by the laser irradiation unit 3, and control the display 150 to display an image of the estimated processing result, i.e., an estimated processing result image. More specifically, the control unit 8 performs the following: exporting an estimated processing result that includes information on the modified regions formed on the wafer 20 and the cracks extending from the modified regions when the wafer 20 is irradiated with laser by the laser irradiation unit 3 according to the set formula; and considering the location of the modified regions and cracks on the wafer 20 as the estimated processing result, controlling the display 150 to display an estimated processing result image in which both the image of the wafer 20 and the image of the modified regions and cracks on the wafer 20 are depicted. More specifically, the estimated processing result refers to the estimated location of the modified regions, the extension amount of the cracks extending from the modified regions, and the presence or absence of black stripes, etc., based on the received wafer processing information (input information) and the determined formula. The control unit 8 controls the display 150 to associate and display the recipe (processing conditions) and the estimated processing result image together.

[0106] like Figure 19 As shown, the estimated processing result image, along with the received wafer processing information (input information) and recipe, are displayed on the monitor 150. Figure 19In the example shown, two columns of modified regions 12a and 12b are depicted on the display 150, and cracks 14 are depicted throughout the two columns of modified regions 12a and 12b. The positions of the depicted modified regions 12a and 12b and cracks 14 are derived by the control unit 8 according to the formula. Now, the estimated processing result image on the display 150 shows A: BHC state (BHC state); B: No black stripes (no black stripes generated); C: 65μm, 92μm, 140μm, 171μm (based on surface 21a, the target position of the lower end of the modified region 12a is 65μm, the target position of the upper end of the modified region 12a is 92μm, the target position of the lower end of the modified region 12b is 140μm, and the target position of the upper end of the modified region 12b is 171μm); D: 246μm (based on surface 21a, the target position of the upper end of the crack 14 extending from the modified region 12b toward the back surface 21b is 246μm); E: wafer thickness t775μm (wafer thickness is 775μm); and a finished thickness of 50μm, etc. Furthermore, the target values ​​for the target location, etc., can be displayed not as a single point, but as a wide range.

[0107] The display 150 may also receive input of first correction information, which corrects the positions of the modified regions 12a and 12b and the crack 14, as displayed in the estimated processing result image, while the display 150 is in a state of displaying the estimated processing result image. That is, the display 150 may receive input of first correction information, which corrects the target positions of the modified regions 12a and 12b and the target positions of the crack 14. In this case, the control unit 8 corrects the estimated processing result based on the first correction information (i.e., information that corrects the target positions of the modified regions 12a and 12b and the target positions of the crack 14), and corrects various parameters of the formula to form a corrected estimated processing result. The control unit 8 then controls the display 150 to associate and display the corrected formula with the estimated processing result image based on the corrected estimated processing result.

[0108] Alternatively, the display 150 may receive input of second correction information for revising the recipe while displaying processing conditions (recipe). In this case, the control unit 8 corrects various parameters of the recipe based on the second correction information, and corrects the estimated processing result based on the corrected recipe, controls the display 150 to associate and display the corrected recipe with the estimated processing result image based on the corrected estimated processing result.

[0109] The control unit 8 can also control the display 150 to display the estimated processing result image and the inspection condition proposal result (refer to...). Figure 19 All are displayed. The recommended inspection conditions are shown in the inspection condition proposal results, based on the formula and estimated processing results image. (Displayed in...) Figure 19The inspection of the proposed inspection conditions, specifically those with letters A through E, corresponds to the contents of A through E in the aforementioned estimated processing result image. That is, in... Figure 19 The proposed inspection conditions are as follows: For A: BHC state inspection, A: BHC inspection and A: BHC boundary inspection are recommended; for B: black stripe inspection, B: black stripe inspection is recommended; for C: location inspection of the modified region (SD layer), C: SD layer location inspection is recommended; for D: location inspection of the upper end of crack 14, D: upper crack location inspection is recommended; for E: wafer thickness inspection, E: wafer thickness inspection is recommended. In the BHC boundary inspection, the backside condition (ST or BHC) at each Z height is displayed, the location of the upper crack tip, the change in the location of the upper crack tip, and the length of the lower crack, etc. Additionally, as... Figure 19 As shown, for each check displayed in the check condition proposal results, the user can choose whether to execute it. After selecting the check to execute, press as shown... Figure 19 The [Processing Start] button indicates that processing has begun. After processing is complete, the selected checks will be performed.

[0110] Regarding the display of the aforementioned estimated processing result image, refer to Figure 20 and Figure 21 A more detailed explanation follows. Here is an example illustrating how the actual cross-sectional condition is schematically displayed in the estimated processing result image. Figure 20 (a) To show the actual state of various cross-sections. Figure 20 (b) To display as Figure 20 (a) shows the estimated processing result image of a section perpendicular to the processing line. Figure 20 (a) and (b) show the corresponding states displayed above and below. For example... Figure 20 As shown in (b), in the estimated processing result image of a cross-section perpendicular to the processing line, the modified region (SD layer) is displayed in an elliptical (or circular) shape, and cracks are shown as lines, schematically illustrating the interconnectedness of cracks throughout the modified region. Based on such an estimated processing result image, the BHC state can be visually displayed. Figure 20 (b) the leftmost state), ST state, and the crack breaks off midway (from) Figure 20 (b) from the left side, second state), BHC state and the crack breaks off along the way (from Figure 20 (b) from the right side of the second state), BHC state and end face concavity and convexity ( Figure 20 (b) the rightmost state), etc. Additionally, regarding the unevenness of the end face, depending on the degree of the crack's serpentine pattern, it can also present as horizontal unevenness ( Figure 20 (b) The rightmost state). Thus, the control unit 8 controls the display 150 to display an estimated processing result image of a cross-section perpendicular to the laser-irradiated processing line.

[0111] Figure 21 (a) To show the actual state of various cross-sections. Figure 21 (b) To display as Figure 21 (a) shows the estimated processing result image of a cross-section with the processing line horizontal. Figure 21 (a) and (b) show the corresponding states displayed above and below. For example... Figure 21 As shown in (b), the estimated processing result image, viewed in a cross-section horizontally across the processing line, displays the modified region (SD layer) in, for example, as a strip. In the image viewed in a cross-section horizontally across the processing line, the modified region can be displayed for each pulse; therefore, an image of the pulse interval can be displayed. Cracks are displayed as surfaces rather than lines, thus allowing for differentiation through color differences, etc. Based on such an estimated processing result image, the BHC state can be visually displayed (…). Figure 21 (b) the leftmost state), ST state, and the crack breaks off midway (from) Figure 21 (b) from the left side, second state), BHC state and the crack breaks off along the way (from Figure 21 (b) from the right side of the second state), BHC state and end face concavity and convexity ( Figure 21 (b) the rightmost state, etc. Regarding the unevenness of the end face, it can be displayed based on the serpentine area of ​​the crack. Figure 20 (b) the rightmost state). Thus, the control unit 8 controls the display 150 to display an estimated processing result image of a horizontal cross-section of the laser-irradiated processing line.

[0112] (Processing)

[0113] During processing, the control unit 8 controls the laser irradiation unit 3 to irradiate the wafer 20 with a laser according to the determined processing conditions (formula). Specifically, the control unit 8 controls the laser irradiation unit 3 to irradiate the wafer 20 with a laser, thereby forming modified regions and cracks extending from the modified regions on the wafer 20. The control unit 8 responds to pressing [Processing Start] on the display 150 (see...). Figure 19 ), and begin processing.

[0114] (Processing results obtained)

[0115] In the processing of the processing results, the control unit 8 controls the camera unit 4 to capture an image of the processed wafer 20, thereby obtaining the laser processing results of the wafer 20 after laser irradiation. Specifically, the control unit 8 controls the camera unit 4 to output light that is transparent to the wafer 20 to capture an image of the wafer 20, obtaining information including the modified regions formed on the wafer 20 by laser irradiation and the cracks extending from the modified regions.

[0116] As mentioned above, after laser processing, the various checks selected by the user are performed (see...). Figure 19 For E: wafer thickness inspection (derivation of wafer thickness) in each inspection, refer to... Figure 22 and Figure 23 The following explanation is provided. In the inspection device 1, the thickness of the wafer 20 can be measured based on information obtained from the laser processing via the laser irradiation unit 3 and the internal observation via the imaging unit 4. Specifically, the control unit 8 performs: a first process, which controls the laser irradiation unit 3 to irradiate the wafer 20 with laser light, thereby forming a modified region inside the wafer 20; and a second process, which, based on the signal output from the imaging unit 4 that detects the light propagating on the wafer 20, derives the position of the modified region, and then, based on the position of the modified region and the set formula (processing conditions), derives the thickness of the wafer 20.

[0117] Figure 22 A derived diagram illustrating wafer thickness. Figure 22 The image shows the situation where a laser is irradiated from the back side 21b of the wafer 20, forming a modified region 12a. The control unit 8 controls the camera unit 4 to move the focus F in the depth direction (Z direction) to acquire multiple images, and then derives from these images: a: the Z position of the upper end of the modified region 12a (SD1), and c: the Z position of the virtual image of the end of the modified region 12a (SD1) on the surface 21a side. That is, in the aforementioned second process, the control unit 8 derives the Z position (position a) of the end of the modified region 12a on the back side 21b side and the Z position (position c) of the virtual image of the end of the modified region 12a on the surface 21a side based on the signal output from the camera unit 4 that detects light. In addition, in the case where the wafer 20 has a functional element layer 22 (pattern), the control unit 8 can control the camera unit 4 to move the focus F in the depth direction (Z direction) to derive b: the Z position of the patterned surface. These Z positions, as explained below, are positions with the back surface 21b of wafer 20 as a reference point. The Z positions of wafer 20, which serve as reference points, can be derived, for example, by identifying cracks extending toward the back surface 21b using an image unit 4 (internal observation detector) or a visible camera with height settings. Alternatively, they can be derived by identifying the Z height with a visible camera with height settings before laser processing. Or, in the case where a laser is incident from the patterned surface, the focal position of the pattern can be determined by measuring the alignment before laser processing or during internal observation after laser processing.

[0118] The control unit 8 can derive the thickness of wafer 20 using three different deriving methods. In the first method, the control unit 8 derives the thickness of wafer 20 based on b: the Z-position of the patterned surface. This first method, as described above, is only applicable when wafer 20 is a wafer with a functional element layer 22 (pattern). In the second and third methods, the control unit 8 derives the thickness of wafer 20 based on c: the Z-position of the virtual image at the end of the surface 21a side of the modified region 12a (SD1), and the formulation.

[0119] In the second method, the control unit 8 first derives the width of the modified region 12a based on the formula. Specifically, the control unit 8 stores, for example... Figure 23 The database showing the wafer thickness (a database corresponding to the processing conditions and the width of the modified region) is used to derive the width of the modified region 12a (SD layer width) corresponding to the laser energy, pulse waveform, pulse spacing, and focusing state shown in the formula (processing conditions). Furthermore, the control unit 8 derives the thickness of the wafer 20 based on the derived width of the modified region 12a, c: the Z position of the virtual image at the end of the modified region 12a (SD1) on the surface 21a side, and a: the Z position of the upper end of the modified region 12a (SD1). For example... Figure 22 As shown, if the width of the modified region 12, c (the Z position of the virtual image at the end of the modified region 12a (SD1) on the surface 21a side), and a (the Z position of the upper end of the modified region 12a (SD1)) are added together, the result is twice the thickness of the wafer 20. Therefore, the control unit 8 can derive the thickness of the wafer 20 by dividing the sum of the width of the modified region 12, c (the Z position of the virtual image at the end of the modified region 12a (SD1) on the surface 21a side), and a (the Z position of the upper end of the modified region 12a (SD1)) by 2.

[0120] In the third method, the control unit 8 first, based on the formula, derives the estimated end position, which is the position of the end of the modified region 12a on the surface 21a side, from which the processing depth (Z-height) of the wafer 20 is estimated by the laser. The control unit 8 then derives the end position considering the DZ rate (the position of the end of the modified region 12a on the surface 21a side considering the DZ rate) based on the estimated end position and a constant (DZ rate) considering the refractive index of silicon in the wafer 20. Finally, based on the end position considering the DZ rate and the Z-position of the virtual image of the end of the modified region 12a (SD1) on the surface 21a side, the thickness of the wafer 20 is derived. Figure 22As shown, by adding the end position considering the aforementioned DZ rate and the Z position of the virtual image at the end of the modified region 12a (SD1) on the surface 21a side, the thickness is formed to be twice that of the wafer 20. Therefore, the control unit 8 can derive the thickness of the wafer 20 by dividing the value obtained by adding the end position considering the aforementioned DZ rate and the Z position of the virtual image at the end of the modified region 12a (SD1) on the surface 21a side by 2.

[0121] The judgment results of each inspection include information on the laser processing results obtained by control unit 8. In the following explanation, the [inspection judgment results] include information on the [laser processing results]. Figure 24 This is an example of a screen displaying a judgment result (NG). For example... Figure 24 As shown, the control unit 8 controls the display 150 to display the inspection and judgment results, which include information about the laser processing results. Alternatively, as shown... Figure 24 As shown, the control unit 8 controls the display 150 to display the estimated processing result image and the inspection judgment result containing information about the laser processing result.

[0122] like Figure 24 As shown, the estimated processing result image on display 150 displays A: BHC state (BHC state); B: No black stripes (no black stripes generated); C: 65μm, 92μm, 140μm, 171μm (based on surface 21a, the target position at the lower end of the modified region 12a is 65μm, the target position at the upper end of the modified region 12a is 92μm, the target position at the lower end of the modified region 12b is 140μm, and the target position at the upper end of the modified region 12b is 171μm); D: 246μm (based on surface 21a, the target position at the upper end of the crack 14 extending from the modified region 12b towards the back surface 21b is 246μm); E: Wafer thickness t775μm (wafer thickness is 775μm); and a finished thickness of 50μm, etc. This estimated processing result image state would be formed if laser processing were performed according to the formula. However, the inspection results show that A: ST (ST state); B: no black stripes; C: 74μm, 99μm, 148μm, 174μm (based on surface 21a, the lower end of modified region 12a is 74μm, the upper end of modified region 12a is 99μm, the lower end of modified region 12b is 148μm, and the upper end of modified region 12b is 174μm); D: 211μm (based on surface 21a, the upper end of crack 14 extending from modified region 12b towards back surface 21b is 211μm); E: wafer thickness t783μm (wafer thickness is 783μm); and the finished thickness is 50μm.

[0123] (Processing condition evaluation and handling)

[0124] Control unit 8 makes a judgment based on the inspection results, which include information about the laser processing results (refer to...). Figure 24 The control unit 8 evaluates the effectiveness of the formulation (processing conditions) by comparing the inspection and judgment results, which include information about the laser processing results, with the estimated processing results considering the formulation determined based on the wafer processing information. Now, as... Figure 24 As shown, the target value of the estimated processing result image deviates from the value of the inspection judgment result in each inspection selected by the user (refer to...). Figure 19 At least in the following areas, inspection results are NG (Not Acceptable Quality) for: A: BHC (Blank Hull), C: SD layer position, D: upper crack position, and E: wafer thickness. The reason for forming ST (Shallow Stripped Layer) instead of BHC could be that the user-set wafer thickness (775μm) was inappropriate to achieve E: wafer thickness t783μm. This could result in the wafer being thicker than set, causing the modified region to shift to a shallower direction or becoming thinner than expected. In such cases, the control unit 8 evaluates the formulation (processing conditions) as unsuitable. Furthermore, the control unit 8 can also determine whether the positional shift of the modified region (SD layer) is due to hardware or formulation issues based on other data such as AF (Augmentation Follow-up) performance. Here, wafer thickness is used as an example to illustrate the reasons for NG, but it is conceivable that various factors such as hardware defects, insufficient limits of the formulation in the database, and wafer doping could also cause NG.

[0125] The control unit 8 can also further modify the formulation (processing conditions) based on the inspection results, including information on the laser processing results, if the evaluation formula (processing conditions) is unsuitable. For example, as mentioned above, if the wafer 20 is thicker than expected, causing an inspection NG (Not Acceptable Error), the control unit 8 can perform Z-height correction, output correction, and focus correction, making the formulation modification decision while performing BHC boundary checks the modification content. Figure 24 As shown, the control unit 8 controls the display 150 to display the inspection and judgment results along with the recommended corrections. The control unit 8 can also control the display 150 to display the priority of each correction. The display 150 can also receive user input such as changes in priority and partial deletion of corrections. The control unit 8 responds to the user pressing [Revision Start] on the display 150 (see...). Figure 24 The process of correcting the display on the monitor 150 begins. In the aforementioned situation (wafer 20 is thicker than expected), corrections are made, for example, by reducing the Z-height to a deeper position by an amount equivalent to the wafer thickness, or by increasing the output by 0.1W, to ensure the width of the modified region. Furthermore, if, for example, the BHC boundary check results show a smaller boundary, the focusing correction amount is adjusted to improve focusing performance. Through this process, the control unit 8 outputs the final (corrected) formula.

[0126] Figure 25 This is an example of a screen displaying the judgment result (OK). For example... Figure 25 As shown, after the correction is implemented, the control unit 8 controls the display 150 to display the estimated processing result image, the inspection and judgment results, and the corrected formula (processing conditions). Figure 25 For example, the inspection results show: A: BHC (BHC state); B: No black streaks; C: 64μm, 93μm, 142μm, 173μm (based on surface 21a, the lower end of modified region 12a is 64μm, the upper end of modified region 12a is 93μm, the lower end of modified region 12b is 142μm, and the upper end of modified region 12b is 173μm); D: 244μm (based on surface 21a, the upper end of crack 14 extending from modified region 12b towards back surface 21b is 244μm); E: Wafer thickness t783μm (wafer thickness is 783μm); and the finished thickness is 50μm. Thus, by implementing corrections for wafer thicknesses different from the expected values, the inspection results are deemed OK. Furthermore, when revising the formula (processing conditions), the control unit 8 updates the aforementioned database, which stores the wafer processing information corresponding to the processing conditions (formula), based on information including the revised formula. For example, if a formula with a wafer thickness (783 μm) as shown in the inspection result does not exist in the database, the control unit 8 re-registers the formula with the wafer thickness (783 μm) as the revised formula in the database. When re-registering the formula in the database, the user's original wafer, processing condition name, etc., can be registered, so that when processing the same wafer, the formula in the database can be retrieved from that name. In addition, the control unit 8 also stores the results of NG (Not Acceptable) checks in the database, thereby improving the accuracy of subsequent formula decisions.

[0127] [Inspection Method]

[0128] Reference Figure 26 The inspection method for this embodiment is explained. Figure 26 This is a flowchart of the inspection method. Figure 26 The flowchart shows the processing conditions for the pretreatment of forming a modified region on the wafer 20 in the inspection method to be performed by the inspection device 1.

[0129] like Figure 26 As shown, in the processing condition export process, firstly, the display 150 receives information about the wafer 20 and user input containing wafer processing information for the laser processing target of the wafer 20 (step S1, first process). Specifically, the display 150 receives information such as... Figure 13 The processing method shown, such as Figure 14 The wafer information shown, and such as Figure 15 The user input for the processing settings shown.

[0130] Next, the control unit 8, by referring to the database, determines (automatically selects) the wafer processing information received via the display 150. Figures 13-15 The control display 150 receives various information (including information received from the setting screen) and displays the corresponding formula (processing conditions) for the automatically selected formula (step S2, second process). The display 150 also displays the formula, estimated processing result image, inspection conditions, etc. (see reference). Figure 19 Additionally, by pressing the [Process Start] button on the display 150, the user determines the formula (step S3), and based on the determined formula, begins the laser irradiation process on the wafer 20 (step S4, third process).

[0131] Next, the control unit 8 makes a judgment based on the inspection results, which include information about the laser processing results (refer to...). Figure 24 The process begins with evaluating the formulation (processing conditions) (step 4) and determining if the formulation is suitable (evaluation OK) (step S5). In step S5, if the formulation is determined to be unsuitable (evaluation NG), the formulation is automatically corrected based on the evaluation result (step S6). For example, if wafer 20 is thicker than expected, causing an NG evaluation, the control unit 8 performs Z-height correction, output correction, and focusing correction, etc. Then, the processing is repeated from step S4.

[0132] Additionally, if the formula is deemed suitable (evaluation OK) in step S5, it is determined whether the formula has not been changed at all (whether the correction process in step S6 has not been implemented at all) (step S7). If the formula has been changed, the changed formula (new formula) is logged into the database (step S8), and the process ends.

[0133] [Effects]

[0134] Next, the effects of the inspection device 1 in this embodiment will be explained.

[0135] The inspection apparatus 1 of this embodiment includes a laser irradiation unit 3 for irradiating a wafer 20 with a laser, a display 150 for displaying information, and a control unit 8. The control unit 8 performs the following: outputting an estimated processing result containing information about the modified regions and cracks extending from the modified regions of the wafer 20 formed by irradiating the wafer 20 with a laser through the laser irradiation unit 3 according to a set formula (processing conditions); and controlling the display 150 to display an image of the wafer 20 and an image of the modified regions and cracks of the wafer 20, taking into account the positions of the modified regions and cracks on the wafer 20 derived as the estimated processing result. Figure 1The same image representing the estimated processing result.

[0136] In inspection device 1, considering the estimated processing results, an image of wafer 20 and the modified area and cracks of wafer 20 is displayed. Figure 1 The image depicting the estimated processing results includes information about the modified regions formed on wafer 20 by laser irradiation according to a set formula, and the cracks extending from the modified regions. Thus, by displaying the estimated processing result image, the user is informed how wafer 20 will be processed (how the modified regions and cracks will be formed) when processing wafer 20 according to the set formula. This allows the user to visually confirm the estimated processing result image and then decide whether to proceed directly to actual processing or change the processing conditions. This enables efficient formula determination and facilitates the processing desired by the user.

[0137] In the aforementioned inspection device 1, the display 150 can also receive input of information related to the formulation setting, and the control unit 8 sets the formulation based on the formulation setting information received through the display 150. Therefore, since the formulation is set based on information received from the user, a suitable formulation can be set, for example, taking into account information about the wafer 20 and the laser processing target of the wafer 20.

[0138] The control unit 8 controls the display 150 to associate and display the formula and the estimated processing result image together. This visually informs the user what kind of processing result was achieved based on the formula used.

[0139] The display 150 can also receive input of first correction information, which relates to the correction of the modified areas and crack locations displayed in the estimated processing result image, while displaying the estimated processing result image. The control unit 8 corrects the estimated processing result based on the first correction information and modifies the formula to form a corrected estimated processing result. Then, it controls the display 150 to associate and display the corrected formula with the estimated processing result image based on the corrected estimated processing result. Therefore, the formula can be easily corrected based on correction instructions from a user who has confirmed the estimated processing result image. For the user, if a correction instruction for the estimated processing result image is issued to achieve the desired processing result, the formula can be automatically corrected to conform to the correction instruction, thus making the desired processing easy to perform.

[0140] When the display 150 shows a recipe, it receives input of second correction information for recipe modification. The control unit then modifies the recipe based on the second correction information, and modifies the estimated processing result based on the modified recipe. The control unit then controls the display 150 to associate and display the modified recipe with the estimated processing result image based on the modified estimated processing result. Thus, the recipe can be easily modified based on user correction instructions, and the estimated processing result image of the modified recipe can be appropriately displayed.

[0141] The inspection device 1 may also include a camera unit 4 that captures images of the wafer 20. The control unit 8 further performs the following: controlling the laser irradiation unit 3 to irradiate the wafer 20 with laser light to form a modified region and cracks extending from the modified region on the wafer 20; controlling the camera unit 4 to output light that is transparent to the wafer 20 to capture images of the wafer 20, obtaining laser processing results including information on the modified region formed on the wafer 20 by laser irradiation and cracks extending from the modified region; and controlling the display 150 to correlate and display the estimated processing result image with the laser processing result together. Thus, the image of the processing estimated from the formula and the actual laser processing result are displayed together, making it easy for the user to determine whether to change the formula.

[0142] The control unit 8 can also control the display 150 to display an estimated processing result image of a cross-section perpendicular to the laser-irradiated processing line. This allows the user to confirm the estimated processing result image of a cross-section perpendicular to the processing line.

[0143] The control unit 8 can also control the display 150 to display an estimated processing result image of a horizontal cross-section of the laser-irradiated processing line. This allows the user to confirm the estimated processing result image of a horizontal cross-section of the processing line.

[0144] The above describes this embodiment; however, the present invention is not limited to the foregoing embodiments. For example, as... Figure 1 As shown, the inspection device 1 has a display 150 that displays images of estimated processing results, etc., but it is not limited to this and may also include, for example... Figure 27 The inspection device 1A shown is similar to the one shown, but it does not have a display. Except for the lack of a display, the inspection device 1A has the same structure as the inspection device 1. In this case, the control unit 8 of the inspection device 1A considers, for example, the location of the modified region and the cracked wafer derived from the estimated processing result, and compares the image of the wafer with the image of the modified region and the cracked wafer. Figure 1The estimated processing result image is output (transmitted) to an external device, etc. Alternatively, the estimated processing result image, etc., may be displayed on an external device other than the inspection device 1A. That is, the estimated processing result image, etc., can be displayed on another device (PC, etc.) that can communicate with the inspection device 1A. Therefore, even if the inspection device 1A does not have a display, the estimated processing result image, etc., can be displayed through another device that can communicate with the inspection device 1A.

[0145] Alternatively, it can be like Figure 28 As shown, in the processing system 600, which includes the aforementioned inspection device 1A and a dedicated display device 550, an estimated processing result image is generated and displayed. In this case, the control unit 8 of the inspection device 1A considers, for example, the locations of modified regions and cracked wafers derived from the estimated processing result, and compares the wafer image with the images of the modified regions and cracks on the wafer. Figure 1 The estimated processing result image is transmitted to the display device 550. The display device 550 displays the estimated processing result image received from the inspection device 1A. According to such a processing system 600, the estimated processing result image transmitted by the inspection device 1A can be appropriately displayed on the display device 550 of an external device.

[0146] Furthermore, in the embodiment, it is described that the display shows an image of the wafer along with images of the modified areas and cracks on the wafer. Figure 1 The estimated processing result image is depicted, but is not limited to this. That is, the control unit does not necessarily need to display the estimated processing result image on the display. For example, it can also export an estimated processing result that includes information on the modified region formed on the wafer and the cracks extending from the modified region, and control the display to show the information of the estimated processing result. The information of the estimated processing result may not be an image of the wafer, modified region, and cracks, but only information showing the location of the modified region and cracks (that is, it may not contain an image).

[0147] In addition, the processing condition export process describes the aforementioned processing result image display process and wafer thickness export process. However, the processing result image display process and wafer thickness export process can also be implemented in processes other than processing condition export process, such as various processes after exporting processing conditions.

[0148] Furthermore, in the embodiment described, the inspection device 1 determines the formula (processing conditions) based on wafer processing information and derives an estimated processing result, but it is not limited to this. That is, the control unit of the inspection device can derive an estimated processing result based on the wafer processing information, and then determine the formula (processing conditions) based on the estimated processing result. In this way, by automatically determining the processing conditions by inputting wafer processing information, it is easier to determine the processing conditions than, for example, when the user repeatedly performs laser processing while adjusting the processing conditions to guide the appropriate processing conditions.

[0149] [Symbol Explanation]

[0150] 1,1A: Inspection device

[0151] 3: Laser Irradiation Unit

[0152] 4: Camera Unit

[0153] 8: Control Department

[0154] 20: Wafer

[0155] 150: Monitor.

Claims

1. An inspection device comprising: Irradiation section for irradiating wafers with lasers; The display unit, which displays information; and Control Department The control unit is configured to execute: The estimated processing result is derived, which includes information on the modified region and the cracks extending from the modified region, which are formed on the wafer when the wafer is irradiated with the laser by the irradiation unit according to the set processing conditions; Generate an estimated processing result image based on the estimated processing result; and The display unit is controlled to consider the modified region and the location of the cracked wafer as the estimated processing result, and to display an image of the estimated processing result depicting the image of the wafer together with an image of the modified region and the cracked wafer.

2. The inspection device as claimed in claim 1, wherein, It also has an input section for receiving information input. The input unit receives input of information related to the setting of the processing conditions. The control unit sets the processing conditions based on information related to the setting of the processing conditions received through the input unit.

3. The inspection device as described in claim 2, wherein, The control unit controls the display unit to associate the processing conditions and the estimated processing result image and display them together.

4. The inspection device as claimed in claim 3, wherein, The input unit, while displaying the estimated processing result image on the display unit, receives input of first correction information related to the correction of the modified region and the location of the cracks displayed in the estimated processing result image. The control unit, Based on the first correction information, the estimated processing result is corrected, and the processing conditions are corrected in such a way that they become the corrected estimated processing result; The display unit is controlled to associate and display together the corrected processing conditions and the estimated processing result image based on the corrected estimated processing result.

5. The inspection device as claimed in claim 3, wherein, When the processing conditions are displayed on the display unit, the input unit receives input of second correction information related to the correction of the processing conditions. The control unit, Based on the second correction information, the processing conditions are corrected, and based on the corrected processing conditions, the estimated processing result is corrected. The display unit is controlled to associate and display together the corrected processing conditions and the estimated processing result image based on the corrected estimated processing result.

6. The inspection device as claimed in claim 4, wherein, When the processing conditions are displayed on the display unit, the input unit receives input of second correction information related to the correction of the processing conditions. The control unit, Based on the second correction information, the processing conditions are corrected, and based on the corrected processing conditions, the estimated processing result is corrected. The display unit is controlled to associate and display together the corrected processing conditions and the estimated processing result image based on the corrected estimated processing result.

7. The inspection device according to any one of claims 1 to 6, wherein, It also includes a camera unit for capturing images of the wafer. The control unit is configured to further perform: The irradiation unit is controlled to irradiate the wafer with the laser to form a modified region and cracks extending from the modified region on the wafer; By controlling the imaging unit, light that is transparent to the wafer is output to image the wafer, thereby obtaining a laser processing result including information about the modified regions formed on the wafer by the laser irradiation and the cracks extending from the modified regions; and The display unit is controlled to associate the estimated processing result image with the laser processing result and display them together.

8. The inspection device as claimed in any one of claims 1 to 6, wherein, The control unit controls the display unit to display an image of the estimated processing result, which is a cross-section perpendicular to the processing line irradiated by the laser.

9. The inspection device as claimed in claim 7, wherein, The control unit controls the display unit to display an image of the estimated processing result, which is a cross-section perpendicular to the processing line irradiated by the laser.

10. The inspection device according to any one of claims 1 to 6, wherein, The control unit controls the display unit to display an image of the estimated processing result, which is a horizontal cross-section of the processing line irradiated by the laser.

11. The inspection apparatus as claimed in claim 7, wherein, The control unit controls the display unit to display an image of the estimated processing result, which is a horizontal cross-section of the processing line irradiated by the laser.

12. The inspection apparatus as claimed in claim 8, wherein, The control unit controls the display unit to display an image of the estimated processing result, which is a horizontal cross-section of the processing line irradiated by the laser.

13. The inspection apparatus as claimed in claim 9, wherein, The control unit controls the display unit to display an image of the estimated processing result, which is a horizontal cross-section of the processing line irradiated by the laser.

14. An inspection device comprising: The irradiation section for irradiating wafers with laser; and Control Department The control unit is configured to execute: The estimated processing result is derived, which includes information on the modified region and the cracks extending from the modified region, which are formed on the wafer when the wafer is irradiated with the laser by the irradiation unit according to the set processing conditions; Based on the estimated processing results, an estimated processing result image is generated; and Taking into account the location of the modified region and the cracked area on the wafer as the estimated processing result, the estimated processing result image is output, which depicts the image of the wafer together with the image of the modified region and the cracked area of ​​the wafer.

15. A processing system, wherein, It is a processing system that enables communication between the inspection device and the display device. The inspection device, The system exports an estimated processing result containing information about the modified region formed by irradiating the wafer with a laser according to set processing conditions and the cracks extending from the modified region. Based on the estimated processing result, it generates an estimated processing result image. Taking into account the positions of the modified region and the cracks on the wafer exported as the estimated processing result, the system outputs the estimated processing result image, which depicts the wafer image along with the images of the modified region and the cracks, to the display device. The display device displays the image of the estimated processing result output by the inspection device.

16. An inspection device comprising: Irradiation section for irradiating wafers with lasers; The display unit, which displays information; and Control Department The control unit is configured to execute: The estimated processing result is derived, which includes information on the modified region and the cracks extending from the modified region, which are formed on the wafer when the wafer is irradiated with the laser by the irradiation unit according to the set processing conditions; Based on the estimated processing results, an estimated processing result image is generated; and The display unit is controlled to display information related to the estimated processing result image.

Images