Inspection apparatus and inspection method

Abstract

An inspection apparatus includes a laser irradiation unit, an imaging unit that images a wafer, a display that receives input, and a control unit that receives input of information including a wafer and wafer processing information that is a laser processing target of the wafer, determines a recipe (processing condition) that includes an irradiation condition of laser light by the laser irradiation unit based on the wafer processing information received by the display, controls the laser irradiation unit so that laser light is irradiated on the wafer in the determined recipe, acquires a laser processing result of the wafer by irradiation of the laser light by controlling the imaging unit so that the wafer is imaged, and evaluates the recipe based on the laser processing result.

Description

Technical Field

[0001] One aspect of the present invention relates to an inspection apparatus and an inspection method. Background Technology

[0002] An inspection apparatus is known to form multiple rows of modified regions inside the semiconductor substrate by irradiating the wafer with a laser from the other side of the semiconductor substrate along multiple lines, thereby cutting the wafer along each of the multiple lines. The inspection apparatus described in Patent Document 1 includes an infrared camera, which can observe the modified regions formed inside the semiconductor substrate and processing damage formed in the functional element layer from the back side of the semiconductor substrate.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2017-64746 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] In the aforementioned inspection apparatus, before irradiating the wafer with a laser (for laser processing), it is necessary to determine the processing conditions, including the laser irradiation conditions, based on information about the wafer and the laser processing target. To appropriately determine the processing conditions, it is necessary, for example, for the user to repeatedly perform laser processing while adjusting the processing conditions to arrive at suitable processing conditions.

[0008] One aspect of the present invention is an invention made in view of the above circumstances, the purpose of which is to provide an inspection device and inspection method that can easily determine appropriate processing conditions.

[0009] Technical means to solve the problem

[0010] An inspection apparatus according to one aspect of the present invention includes: an irradiation unit for irradiating a wafer with a laser; an imaging unit for capturing an image of the wafer; an input unit for receiving information input; and a control unit, wherein the input unit receives input including information about the wafer and wafer processing information for a laser processing target of the wafer, and the control unit performs the following actions: determining processing conditions including irradiation conditions of the laser passing through the irradiation unit based on the wafer processing information received through the input unit; controlling the irradiation unit to irradiate the wafer with a laser based on the determined processing conditions; controlling the imaging unit to capture an image of the wafer to obtain a laser processing result of the wafer irradiated by the laser; and evaluating the processing conditions based on the laser processing result.

[0011] In one aspect of the inspection apparatus of the present invention, if wafer processing information is input, processing conditions are determined based on that wafer processing information. Thus, by automatically determining the processing conditions based on the input wafer processing information, it is easier to determine the processing conditions than, for example, when a user repeatedly performs laser processing while adjusting the processing conditions to guide the appropriate processing conditions. Furthermore, in one aspect of the inspection apparatus of the present invention, the processing conditions are evaluated based on the laser processing results performed with the determined processing conditions. Therefore, for example, based on the evaluation results, the processing conditions can be appropriately optimized by changing them as needed. As described above, according to one aspect of the inspection apparatus of the present invention, appropriate processing conditions can be easily determined.

[0012] Alternatively, the control unit can determine the processing conditions corresponding to the wafer processing information received by the input unit by referring to a database that stores wafer processing information and processing conditions in relation to each other. By determining the processing conditions based on information from the database, the process of determining processing conditions can be simplified.

[0013] The control unit can also evaluate processing conditions based on laser processing results and wafer processing information. Therefore, processing conditions can be evaluated appropriately based on factors such as whether actual laser processing is performed to achieve the laser processing target for the wafer.

[0014] The control unit can also be configured to further execute the following: if the processing conditions are deemed inappropriate, the processing conditions can be corrected based on the laser processing results. Therefore, if processing conditions are deemed inappropriate, they can be automatically changed based on the laser processing results, making it easier to optimize the processing conditions.

[0015] Alternatively, the control unit can be configured to further execute the following: if the processing conditions are corrected, the database is updated based on information including the corrected processing conditions. In this way, by registering the corrected processing conditions in the database, more appropriate processing conditions can be determined when processing conditions are subsequently decided based on wafer processing information input.

[0016] The aforementioned inspection device also includes a display unit that displays information, and a control unit configured to further execute: controlling the display unit to display the determined processing conditions. By displaying (user-suggested) processing conditions, the user can be notified of which processing conditions to use, and, as needed, the processing conditions can be changed based on user instructions.

[0017] The control unit, by referring to a database, extracts multiple candidate processing conditions corresponding to the received wafer processing information, and controls the display unit to display these multiple candidate processing conditions. Thus, when there are multiple processing conditions corresponding to the (suitable) wafer processing information, each can be displayed as a candidate processing condition (as proposed by the user).

[0018] Alternatively, the input unit can receive user input selecting one processing condition candidate while multiple processing condition candidates are displayed on the display unit. The control unit then determines the selected processing condition candidate from the user input received by the input unit as the processing condition. Thus, based on the user's instruction, the processing condition desired by the user is determined from multiple processing condition candidates.

[0019] The control unit outputs the matching degree between multiple processing condition candidates and the wafer processing information, and controls the display unit to display the multiple processing condition candidates, taking into account the display method of the matching degree. Thus, for example, the matching degree can be displayed to the user, or processing condition candidates with high matching degrees can be distinguished and displayed from those with low matching degrees, making it easier for the user to select the appropriate processing condition from multiple processing condition candidates.

[0020] It can also export estimated processing results based on processing conditions, such as the laser irradiation of the wafer by the irradiation unit, to the control unit, and control the display unit to display an image of the estimated processing results. By displaying a processing image of the laser processing based on the processing conditions, the validity of the processing conditions is shown to the user, making it easier for the user to determine whether to change the processing conditions.

[0021] Alternatively, the input unit can receive first correction information regarding the correction of the processing position of the estimated processing result image while the display unit is showing the estimated processing result image. Based on the first correction information, the control unit corrects the estimated processing result and the processing conditions to achieve the corrected estimated processing result. Therefore, processing conditions can be easily corrected based on correction instructions from a user who has confirmed the estimated processing result image. For the user, if a correction instruction for the estimated processing result image is issued to achieve the desired processing result, the processing conditions can be automatically corrected to meet the correction instruction, thus making it easy to perform the desired processing.

[0022] Alternatively, the input unit can receive second correction information for the processing conditions while displaying the status of the processing conditions on the display unit. The control unit then corrects the processing conditions based on the second correction information and, based on the corrected processing conditions, corrects the estimated processing result. Thus, processing conditions can be easily corrected based on correction instructions from the user, and an estimated processing result image showing the corrected processing conditions can be appropriately displayed.

[0023] It can also be used by the control unit to control the display unit and display the laser processing results. Thus, the laser processing results, based on the processing conditions, can be displayed to the user.

[0024] The control unit can also control the display unit to display a message urging correction if the wafer processing information received from the input unit is inappropriate. Therefore, when inappropriate wafer processing information is input, the user can be prompted to make corrections.

[0025] Alternatively, the wafer processing information may include information showing the finished thickness of the wafer. Thus, for example, the finished thickness of the wafer can be considered in cases where grinding is performed after stealth block cutting, allowing for appropriate determination of processing conditions.

[0026] The wafer processing information may also include: information showing whether a crack extending from a modified region formed when the wafer is irradiated with a laser reaches or does not reach the wafer surface; and information showing the hypothetical extension amount of the crack caused by grinding after laser irradiation, in cases where the crack has not reached the wafer surface. Therefore, processing conditions can be appropriately determined based on the amount of crack extension caused by grinding, for example, when grinding after stealth block cutting causes the crack to extend and reach the wafer surface.

[0027] Alternatively, the wafer processing information can include a finished profile showing whether the wafer has undergone laser processing and grinding, and presenting the state of the modified areas formed when the wafer is irradiated with a laser. Therefore, in cases where the user desires to eliminate modified areas on the finished profile for purposes such as increasing chip strength or reducing particle size, this finished profile information can be appropriately considered to determine processing conditions.

[0028] An inspection apparatus according to one aspect of the present invention includes: an irradiation unit for irradiating a wafer with a laser; an input unit for receiving information input; and a control unit, wherein the input unit receives input including information about the wafer and wafer processing information for a laser processing target on the wafer.

[0029] The control unit is configured to perform: based on the wafer processing information received by the input unit, to derive an estimated processing result when the laser is irradiated by the irradiation unit; and based on the estimated processing result, to determine processing conditions including the irradiation conditions of the laser passing through the irradiation unit.

[0030] In one aspect of the inspection apparatus of the present invention, if wafer processing information is input, an estimated processing result based on the wafer processing information is derived, and processing conditions are determined based on the estimated processing result. Thus, by automatically determining processing conditions based on input wafer processing information, it is easier to determine processing conditions than, for example, by having a user repeatedly perform laser processing while adjusting processing conditions to guide appropriate processing conditions. As described above, according to one aspect of the inspection apparatus of the present invention, processing conditions can be easily and appropriately determined.

[0031] An inspection method according to one aspect of the present invention includes: a first step of receiving input including wafer information and wafer processing information for a laser processing target of the wafer;

[0032] A second process, based on the wafer processing information received in the first process, determines the processing conditions, including the irradiation conditions of the laser irradiating the wafer; a third process, based on the processing conditions determined in the second process, irradiates the wafer with a laser; and a fourth process, based on the laser processing results of the wafer irradiated by the laser in the third process, evaluates the processing conditions.

[0033] An inspection method according to one aspect of the present invention includes: a first step of receiving input including wafer information and wafer processing information of a laser processing target for the wafer; a second step of deriving an estimated processing result under the condition of irradiating the wafer with a laser based on the wafer processing information received in the first step; and a third step of determining processing conditions including laser irradiation conditions based on the estimated processing result derived in the second step.

[0034] The effects of the invention

[0035] According to an inspection apparatus and inspection method based on one aspect of the present invention, appropriate processing conditions can be easily determined. Attached Figure Description

[0036] Figure 1 This is a structural diagram of an inspection device according to one embodiment.

[0037] Figure 2 This is a top view of a wafer according to one embodiment.

[0038] Figure 3 yes Figure 2 A cross-sectional view of a portion of the wafer shown.

[0039] Figure 4 yes Figure 1 The diagram shows the structure of the laser irradiation unit.

[0040] Figure 5 yes Figure 1 The diagram shown is a structural diagram of the inspection camera unit.

[0041] Figure 6 yes Figure 1 The diagram shows the structure of the camera unit used for alignment correction.

[0042] Figure 7 It is used to illustrate, for example Figure 5 The diagram shows a cross-sectional view of the wafer through which the inspection camera unit operates, and images of various parts of the wafer through the inspection camera unit.

[0043] Figure 8 It is used to illustrate, for example Figure 5 The diagram shows a cross-sectional view of the wafer based on the imaging principle of the inspection camera unit, and images of various parts obtained through the inspection camera unit.

[0044] Figure 9 These are SEM images of the modified regions and cracks formed inside the semiconductor substrate.

[0045] Figure 10 These are SEM images of the modified regions and cracks formed inside the semiconductor substrate.

[0046] Figure 11 It is used to illustrate, for example Figure 5 The diagram shows the optical path of the inspection camera unit and a schematic diagram of the image at the focal point of the inspection camera unit.

[0047] Figure 12 It is used to illustrate, for example Figure 5 The diagram shows the optical path of the inspection camera unit and a schematic diagram of the image at the focal point of the inspection camera unit.

[0048] Figure 13 This is an example of a screen for setting up wafer fabrication information.

[0049] Figure 14 This is an example of a screen for setting up wafer fabrication information.

[0050] Figure 15 This is an example of a screen for setting up wafer fabrication information.

[0051] Figure 16 This is a diagram illustrating the setup of the completed cross-section.

[0052] Figure 17 This is a diagram illustrating recipe selection from a database.

[0053] Figure 18 This is a diagram illustrating the selection of multiple recipes from a database.

[0054] Figure 19 This is an example of a display screen showing the estimated processing result image.

[0055] Figure 20 It is a diagram illustrating the estimated processing result image.

[0056] Figure 21 It is a diagram illustrating the estimated processing result image.

[0057] Figure 22 This is a derived diagram illustrating the wafer thickness.

[0058] Figure 23 This is an example of a database derived from wafer thickness.

[0059] Figure 24 This is an example of a screen displaying the result of an inspection (NG).

[0060] Figure 25 This is an example of a screen displaying the check result (OK).

[0061] Figure 26 This is a flowchart of the inspection method.

[0062] Figure 27 This is a structural diagram of the inspection device for a modified example.

[0063] Figure 28 This is a structural diagram of the processing system for the modified example. Detailed Implementation

[0064] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Furthermore, in the drawings, the same or equivalent parts are sometimes given the same reference numerals, and repeated descriptions are omitted.

[0065] [Structure of the inspection device]

[0066] like Figure 1 As shown, the inspection apparatus 1 includes: a stage 2; a laser irradiation unit 3 (irradiation section); multiple camera units 4, 5, and 6; a drive unit 7; a control unit 8; and a display 150 (input section and display section). The inspection apparatus 1 is a device that forms a modified region 12 on an object 11 by irradiating the object 11 with a laser L.

[0067] The mounting stage 2 supports the object 11, for example, by adsorbing and attaching a film to the object 11. The mounting stage 2 is movable along the X and Y directions and can rotate about an axis that is parallel to the Z direction as its center line. Furthermore, the X and Y directions are mutually perpendicular first and second horizontal directions, and the Z direction is a vertical direction.

[0068] The laser irradiation unit 3 focuses a transmissive laser L onto the object 11. If the laser L is focused inside the object 11 supported on the stage 2, the laser L will be particularly absorbed at the point corresponding to the focusing point C of the laser L, thus forming a modified region 12 inside the object 11.

[0069] The modified region 12 is a region whose density, refractive index, mechanical strength, and other physical properties differ from the surrounding unmodified region. The modified region 12 may have, for example, a melt-treated region, a cracked region, an insulation-damaged region, or a region with a changing refractive index. The modified region 12 has the characteristic that cracks easily extend from the modified region 12 toward the incident side of the laser L and to the opposite side. This characteristic of the modified region 12 is utilized in the cutting of the object 11.

[0070] As an example, if the stage 2 is moved along the X direction, and the focusing point C is moved relative to the object 11 along the X direction, multiple modification points 12s are formed in a row along the X direction. Each modification point 12s is formed by irradiation with a single pulse of laser L. A row of modification regions 12 is a collection of multiple modification points 12s arranged in a row. Adjacent modification points 12s can be connected or separated depending on the relative movement speed of the focusing point C relative to the object 11 and the repetition frequency of the laser L.

[0071] The camera unit 4 can capture images of the modified region 12 formed on the object 11 and the front end of the crack extending from the modified region 12.

[0072] Under the control of the control unit 8, camera units 5 and 6 capture images of the object 11 supported on the platform 2 using light transmitted through the object 11. The images obtained by camera units 5 and 6 are, for example, supplied to the alignment position of the laser L.

[0073] The drive unit 7 supports the laser irradiation unit 3 and multiple camera units 4, 5, and 6. The drive unit 7 moves the laser irradiation unit 3 and the multiple camera units 4, 5, and 6 along the Z direction.

[0074] The control unit 8 controls the operation of the stage 2, the laser irradiation unit 3, the multiple camera units 4, 5, and 6, and the drive unit 7. The control unit 8 is configured as a computer device including a processor, memory, storage, and communication devices. In the control unit 8, the processor executes software (programs) loaded into the memory, etc., controls the reading and writing of data in the memory and storage, and controls communication via the communication devices.

[0075] The display 150 has the functions of an input section for receiving information from a user and a display section for displaying information to a user.

[0076] [Structure of the object]

[0077] like Figure 2 and Figure 3As shown, the object 11 in this embodiment is a wafer 20. The wafer 20 includes a semiconductor substrate 21 and a functional element layer 22. Furthermore, in this embodiment, the wafer 20 is described with the functional element layer 22 present; however, the wafer 20 may or may not have the functional element layer 22, and may also be a bare wafer. The semiconductor substrate 21 has a surface 21a (second surface) and a back surface 21b (first surface). The semiconductor substrate 21 is, for example, a silicon substrate. The functional element layer 22 is formed on the surface 21a of the semiconductor substrate 21. The functional element layer 22 includes a plurality of functional elements 22a arranged in two dimensions along the surface 21a. The functional elements 22a are, for example, light-receiving elements such as light-emitting diodes, light-emitting elements such as laser diodes, circuit elements such as memory, etc. Multiple layers of functional elements 22a are stacked to form a three-dimensional structure. Furthermore, the semiconductor substrate 21 has a notch 21c indicating the crystal orientation, but an orientation plane may be provided instead of the notch 21c.

[0078] The wafer 20 is cut into individual functional elements 22a along each of a plurality of lines 15. The plurality of lines 15, when viewed from the thickness direction of the wafer 20, pass between each of the plurality of functional elements 22a. More specifically, the lines 15, when viewed from the thickness direction of the wafer 20, pass through the center (center in the width direction) of the dicing region 23. The dicing region 23 extends in the functional element layer 22 in a manner that passes between adjacent functional elements 22a. In this embodiment, the plurality of functional elements 22a are arranged in a matrix along the surface 21a, and the plurality of lines 15 are set in a lattice pattern. Furthermore, the lines 15 are imaginary lines, but could also be actually drawn lines.

[0079] [Structure of the laser irradiation unit]

[0080] like Figure 4 As shown, the laser irradiation unit 3 includes a light source 31, a spatial light modulator 32, and a focusing lens 33. The light source 31 outputs laser light L via, for example, pulse oscillation. The spatial light modulator 32 modulates the laser light L output from the light source 31. The spatial light modulator 32 is, for example, a spatial light modulator (SLM) of a reflective liquid crystal on silicon (LCOS). The focusing lens 33 focuses the laser light L modulated by the spatial light modulator 32. Alternatively, the focusing lens 33 may also be a correction ring lens.

[0081] In this embodiment, the laser irradiation unit 3 irradiates the wafer 20 with laser L from the back surface 21b side of the semiconductor substrate 21 along multiple lines 15, forming two rows of modified regions 12a and 12b inside the semiconductor substrate 21 along the multiple lines 15. Modified region 12a is the modified region closest to surface 21a among the two rows of modified regions 12a and 12b. Modified region 12b is the modified region closest to modified region 12a and closest to the back surface 21b among the two rows of modified regions 12a and 12b.

[0082] The two modified regions 12a and 12b are adjacent in the thickness direction (Z direction) of the wafer 20. The two modified regions 12a and 12b are formed by moving two focusing points C1 and C2 relative to each other along line 15 relative to the semiconductor substrate 21. The laser L is modulated by a spatial light modulator 32, for example, with focusing point C2 located behind the focusing point C1 in the travel direction and on the incident side of the laser L. Furthermore, the formation of the modified regions can be single-focus or multi-focus, and can be single-pass or multiple-pass.

[0083] The laser irradiation unit 3 irradiates the wafer 20 with laser L from the back side 21b of the semiconductor substrate 21 along multiple lines 15. For example, for a single-crystal silicon substrate (semiconductor substrate 21) with a thickness of 775 μm, two focusing points C1 and C2 are aligned with positions of 54 μm and 128 μm from the surface 21a, respectively, and laser L is irradiated towards the wafer 20 from the back side 21b of the semiconductor substrate 21 along multiple lines 15. For example, assuming that the cracks 14 covering the two columns of modified regions 12a and 12b reach the surface 21a of the semiconductor substrate 21, the wavelength of laser L is 1099 nm, the pulse width is 700 nm, and the repetition frequency is 120 kHz. Furthermore, the output of laser L at focusing point C1 is 2.7 W, the output of laser L at focusing point C2 is 2.7 W, and the relative moving speed of the two focusing points C1 and C2 relative to the semiconductor substrate 21 is 800 mm / s.

[0084] The formation of the modified regions 12a and 12b and the crack 14 in these two rows is carried out under the following circumstances. That is, in a subsequent process, for example, the semiconductor substrate 21 is thinned by grinding the back side 21b of the semiconductor substrate 21 and the crack 14 is exposed on the back side 21b, and the wafer 20 is cut into multiple semiconductor devices along multiple lines 15 respectively.

[0085] [Inspection of the structure of the camera unit]

[0086] like Figure 5As shown, the imaging unit 4 (imaging section) includes a light source 41, a reflector 42, an objective lens 43, and a light detection unit 44. The imaging unit 4 captures images of the wafer 20. The light source 41 outputs transmissive light I1 to the semiconductor substrate 21. The light source 41 is configured, for example, by a halogen lamp and a filter, and outputs light I1 in the near-infrared region. The light I1 output from the light source 41 is reflected by the reflector 42 and passes through the objective lens 43, and then illuminates the wafer 20 from the back side 21b of the semiconductor substrate 21. At this time, the stage 2 supports the wafer 20, which has two rows of modified regions 12a and 12b formed as described above.

[0087] Objective lens 43 allows light I1 reflected from the surface 21a of semiconductor substrate 21 to pass through. In other words, objective lens 43 allows light I1 propagating on semiconductor substrate 21 to pass through. The aperture number (NA) of objective lens 43 is, for example, 0.45 or more. Objective lens 43 has a correction ring 43a. The correction ring 43a corrects aberrations generated by light I1 within semiconductor substrate 21, for example, by adjusting the distance between the multiple lenses constituting objective lens 43. Furthermore, the means of correcting aberrations is not limited to the correction ring 43a; other correction means such as a spatial light modulator can be used. Light detection unit 44 detects light I1 passing through objective lens 43 and mirror 42. Light detection unit 44 is configured, for example, using an InGaAs camera, to detect light I1 in the near-infrared region. Furthermore, the means of detecting (imaging) light I1 in the near-infrared region is not limited to an InGaAs camera; other imaging means can be used, such as a transmission-type confocal microscope or other means of transmission-type imaging.

[0088] The camera unit 4 can capture images of the front ends of each of the two rows of modified regions 12a and 12b, and each of the multiple cracks 14a, 14b, 14c, and 14d (details will be described later). Crack 14a is a crack extending from modified region 12a toward surface 21a. Crack 14b is a crack extending from modified region 12a toward back surface 21b. Crack 14c is a crack extending from modified region 12b toward surface 21a. Crack 14d is a crack extending from modified region 12b toward back surface 21b.

[0089] [Structure of the camera unit for alignment correction]

[0090] like Figure 6 As shown, the imaging unit 5 includes a light source 51, a reflector 52, a lens 53, and a light detection unit 54. The light source 51 outputs transmissive light I2 to the semiconductor substrate 21. The light source 51 is configured, for example, by using a halogen lamp and a filter, and outputs light I2 in the near-infrared region. The light source 51 may also be common to the light source 41 of the imaging unit 4. The light I2 output from the light source 51 is reflected by the reflector 52 and passes through the lens 53, and then illuminates the wafer 20 from the back side 21b of the semiconductor substrate 21.

[0091] Lens 53 allows light I2 reflected from the surface 21a of the semiconductor substrate 21 to pass through. In other words, lens 53 allows light I2 propagating on the semiconductor substrate 21 to pass through. The number of apertures in lens 53 is 0.3 or less. That is, the number of apertures in the objective lens 43 of the imaging unit 4 is greater than the number of apertures in lens 53. Light detection unit 54 detects the light I2 passing through lens 53 and mirror 52. Light detection unit 55, for example, is configured using an InGaAs camera, and detects light I2 in the near-infrared region.

[0092] Under the control of the control unit 8, the imaging unit 5 irradiates the wafer 20 with light I2 from the back side 21b and detects the light I2 returning from the surface 21a (functional element layer 22), thereby capturing an image of the functional element layer 22. Similarly, under the control of the control unit 8, the imaging unit 5 irradiates the wafer 20 with light I2 from the back side 21b and detects the light I2 returning from the formation locations of the modified regions 12a and 12b of the semiconductor substrate 21, thereby acquiring an image of the region including the modified regions 12a and 12b. These images are used for alignment of the irradiation position of the laser L. The imaging unit 6 has the same structure as the imaging unit 5, except that it has a lower magnification than the lens 53 (for example, 1.5x in the imaging unit 6 compared to 6x in the imaging unit 5), and is used for alignment in the same way.

[0093] [Inspection of the camera unit's imaging principle]

[0094] Use such as Figure 5 The camera unit 4 shown is as follows: Figure 7 As shown, for the semiconductor substrate 21 where the cracks 14 extending from the modified regions 12a and 12b across the two columns reach the surface 21a, the focal point F (the focal point of the objective lens 43) is moved from the back surface 21b side toward the surface 21a side. In this case, if the focal point F is aligned from the back surface 21b side with the tip 14e of the crack 14 extending from the modified region 12b toward the back surface 21b side, the tip 14e ( Figure 7 (Image on the right). However, even when the focal point F is aligned with the crack 14 itself and the front end 14e of the crack 14 reaching the surface 21a from the back side 21b side, they cannot be confirmed ( Figure 7 (Image on the left). Furthermore, if the focal point F is aligned with the surface 21a of the semiconductor substrate 21 from the back side 21b, the functional element layer 22 can be identified.

[0095] Use such as Figure 5 The camera unit 4 shown is as follows: Figure 8As shown, for a semiconductor substrate 21 where the cracks 14 covering the two modified regions 12a and 12b do not reach the surface 21a, the focal point F is moved from the back side 21b towards the surface 21a. In this case, even if the focal point F is aligned with the tip 14e of the crack 14 extending from the modified region 12a towards the surface 21a from the back side 21b, it is impossible to confirm that the tip 14e ( Figure 8 (Image on the left). However, if the focal point F is aligned from the back side 21b with the region opposite to the back side 21b relative to the surface 21a (i.e., the region on the side of the functional element layer 22 relative to the surface 21a), and a virtual focal point Fv symmetrical to the focal point F is located at the front end 14e with respect to the surface 21a, then the front end 14e can be confirmed ( Figure 8 (Image on the right). Furthermore, the virtual focus Fv is a point symmetrical about surface 21a to the focus F taking into account the refractive index of the semiconductor substrate 21.

[0096] As mentioned above, the crack 14 itself cannot be identified, presumably because the width of the crack 14 is smaller than the wavelength of the illumination light, i.e., light I1. Figure 9 and Figure 10 It is a SEM (Scanning Electron Microscope) image of the modified region 12 and the crack 14 formed inside the semiconductor substrate 21 on the silicon substrate. Figure 9 (b) is Figure 9 An enlarged view of region A1 shown in (a), Figure 10 (a) is Figure 9 A magnified view of region A2 shown in (b). Figure 10 (b) is Figure 10 A magnified view of region A3 shown in (a). Thus, the width of the crack 14 is about 120 nm, which is smaller than the wavelength of light I1 in the near-infrared region (e.g., 1.1–1.2 μm).

[0097] The camera principle assumed based on the above is as follows. Figure 11 As shown in (a), if the focal point F is placed in the air, then light I1 cannot return, thus obtaining a darker image. Figure 11 (Image to the right of (a)). Figure 11 As shown in (b), when the focal point F is located inside the semiconductor substrate 21, the light I1 reflected at the surface 21a returns, thus obtaining a whiter image. Figure 11 (Image to the right of (b)). Figure 11 As shown in (c), if the focal point F is aligned with the modified region 12 from the back side 21b, the modified region 12 absorbs and scatters a portion of the light I1 reflected back from the surface 21a. Therefore, an image is obtained in which the modified region 12 appears darker against a white background. Figure 11 (Image to the right of (c)).

[0098] like Figure 12 As shown in (a) and (b), if the focal point F is aligned with the front end 14e of the crack 14 from the back side 21b, then, for example, based on the optical specificity generated near the front end 14e (stress concentration, strain, atomic density discontinuity, etc.), and the light blocking generated near the front end 14e, a portion of the light I1 reflected back from the surface 21a undergoes scattering, reflection, interference, absorption, etc., thus obtaining an image in which the front end 14e appears darker against a white background. Figure 12 (Images to the right of (a) and (b)). Figure 12 As shown in (c), if the focal point F is aligned with the portion of the crack 14 other than the front end 14e from the back side 21b, at least a portion of the light I1 reflected on the surface 21a is returned, thus obtaining a whiter image. Figure 12 (Image to the right of (c)).

[0099] [Processing Conditions Export Processing]

[0100] The following describes the processing condition derivation process performed as a pretreatment for forming modified regions, such as dicing wafer 20. Processing conditions refer to the processing formula that displays the conditions and sequence under which wafer 20 is processed. The control unit 8 performs the following: Based on information received from the display 150, it determines the processing conditions, including the irradiation conditions of the laser through the laser irradiation unit 3 (processing condition determination process); with the determined processing conditions, it controls the laser irradiation unit 3 to irradiate the wafer 20 with laser (processing process); it controls the imaging unit 4 to capture an image of the wafer 20, obtaining the laser processing result of the irradiated wafer 20 (processing result acquisition process); based on the laser processing result, it evaluates the processing conditions (processing condition evaluation process).

[0101] (Processing conditions determine the treatment)

[0102] Reference Figures 13-21 This section explains the processing condition determination process. In this process, firstly, the display 150 receives user input containing information about the wafer 20 and wafer processing information for the laser processing target of that wafer 20. The laser processing target refers to information displaying the content of the laser processing desired by the user. Figures 13-15 This is an example of a setting screen (user input receiving screen) displaying wafer processing information on the display 150. Figure 13 This is the screen for setting the processing method (the information contained in the aforementioned laser processing target). Figure 14 This is the screen for setting the wafer information (the information contained in the wafer 20 information mentioned above). Figure 15 This is the settings screen for the processing configuration (information contained in the aforementioned laser processing target). Here, the processing method ( Figure 13 ), wafer information ( Figure 14 ), processing settings ( Figure 15 This example illustrates the setting order, but the order of these settings (screen display order) is not limited to this.

[0103] like Figure 13 As shown, the display 150 initially receives user input regarding the processing method. Processing methods generally include, for example, SDAG (Stealth Dicing After Grinding) and SDBG (Stealth Dicing Before Grinding). SDAG is a processing method that performs stealth dicing after wafer 20 grinding. SDBG is a processing method that performs stealth dicing before wafer 20 grinding. SDAG, more specifically, can be divided into three categories: SDAG (Surface Incidence), SDAG (Back Incidence), and SDAG (Skip Tape Processing). SDAG (Surface Incidence) is a processing method where a laser is irradiated from the surface 21a side after wafer 20 grinding. It can be used in situations where there is no TEG on the incident surface of MEMS, etc., and where street width can be ensured. SDAG (Back Incidence) is used when TEG exists on surface 21a, or when it is desirable to reduce street width. SDAG (Skip Tape Processing) is used when it is desirable to reduce the tape transfer process. SDBG, more specifically, can be divided into two categories: SDBG (surface incidence) and SDBG (backward incidence). The following explanation will use SDBG (backward incidence) as an example of a machining method.

[0104] like Figure 14As shown, the display 150 then receives user input regarding wafer information. This wafer information may include, for example, wafer thickness, finished thickness, wafer type, incident surface condition, resistance value (doping level), index size (ch1), and index size (ch2). Among these, wafer thickness and finished thickness are not necessarily required. Wafer thickness displays information about the thickness of wafer 20. Wafer thickness may be, for example, the thickness of both the semiconductor substrate 21 (silicon) and the functional element layer 22 (pattern) containing wafer 20. Furthermore, wafer thickness can also be set separately for silicon wafer thickness and pattern thickness. Finished thickness displays information about the thickness of wafer 20 after, for example, grinding. That is, grinding is performed using a grinding machine until the finished thickness is achieved. After grinding using the grinding machine, a tape transfer process and an expansion process are performed. Furthermore, if the stealth cube cutting device and the grinding device (grinding machine) can communicate with each other, the finished thickness information can be shared between the two devices. The finished thickness is, for example, the thickness of both the semiconductor substrate 21 (silicon) and the functional element layer 22 (pattern) of the wafer 20. Alternatively, the finished thickness can be set separately for the silicon wafer thickness and the pattern thickness. Information such as the pattern thickness and the layer stack-up structure is used, for example, when the control unit 8 estimates the length of the crack 14. Furthermore, a grinding amount can be set instead of the finished thickness.

[0105] The wafer type is categorized, for example, by the position of the notch, such as [0°] products, [45°] products, etc. For example, if the wafer type is set to 45°, BHC is recommended in the BHC state of the processing settings described later. [BHC (Bottom sidehalf-cut)] refers to the state where the crack 14 reaches the surface 21a (i.e., the crack reaches the state). Furthermore, for BHC, the crack 14 only needs to reach the surface 21a, regardless of whether it reaches the patterned surface (the surface of the functional element layer 22). For example, if the wafer type is set to 0°, both ST and BHC are recommended in the BHC state of the processing settings described later. [ST (Stealth)] refers to the state where the crack 14 does not reach the back side 21b and the surface 21a. The incident surface state displays information such as the film type (refractive index) and film thickness of the incident surface. Based on the incident surface state and the laser wavelength, the control unit 8 calculates the reflectivity and determines the laser output. The resistance value (doping level) is the resistance value (in the case of doping level, it is the value converted from the doping level to the resistance value). Based on the resistance value and laser wavelength, the laser output is determined by the arrival rate calculated by the control unit 8. The index size is information used to determine the index value of the cutting machine, etc. Furthermore, when processing an unknown wafer 20, since the wafer type, the state of the incident surface, the resistance value, etc. are unknown, it is not necessary to set these parameters.

[0106] like Figure 15As shown, the display 150 then receives user input regarding the processing settings. Furthermore, some of the various information regarding the processing settings can be automatically set based on the aforementioned processing method and wafer information. For example, processing settings may include BHC state (crack arrival information), Si allowance (information displaying the assumed extension amount of the crack), number of passes, speed, finished profile, and sputter protection range. Among these, setting the BHC state is not necessarily required. The BHC state displays information from either BHC or ST. That is, the BHC state displays information about the state where a crack extending from the modified region formed when the wafer 20 is irradiated with a laser reaches or does not reach the surface 21a of the wafer 20. When ST is set in the BHC state, the aforementioned Si allowance can be set. The Si allowance is the length from the arrival position of the crack 14 after ST processing to the surface 21a (the length of the remaining silicon portion after ST processing). In the case of ST processing, in order to finally cleave the wafer 20, the crack 14 needs to be extended during grinding until the BHC state is achieved before the expansion process. Users typically determine the extent to which the crack 14 extends due to grinding. For example, the extension amount of the crack 14 in the grinding machine is determined by the number of stages in the Z-height of the processing depth (height) during laser processing. That is, the user determines the assumed extension amount of the crack 14 in the grinding machine by using, for example, [Z1 amount] (depth amount of one stage of Z-height) and [Z2 amount] (depth amount of two stages of Z-height). Therefore, during ST processing, by setting the assumed extension amount of the crack 14 in the grinding machine (number of stages in Z-height) as the Si allowance, the advantages of ST processing (increased processing speed or reduced spatter) can be enjoyed, and wafer 20 can be reliably diced. When setting the Z-height during laser processing, the offset from the position that becomes BHC towards the ST direction (the direction in which the crack 14 shortens) is equivalent to the Z-height set by the Si allowance. The database described later (a database that corresponds and stores wafer processing information with processing conditions (formulas)) may also store formulas containing Si balances. Furthermore, the Si balance can also be calculated from the wafer thickness and Z-height by measuring the amount of cracking, for example, under ST conditions.

[0107] The number of passes displays information about the number of passes and the number of focal points. The user sets the desired value for the number of passes. If processing cannot be performed at the set number of passes, the control unit 8 can increase the number of passes when proposing processing conditions (recipes) to the user or when correcting the processing conditions (recipes). Furthermore, if the various wafer processing information received by the control unit 8 through the display 150 is inappropriate, it can control the display 150 to display a message urging correction. Speed ​​is the laser processing speed. The control unit 8 considers the set speed and determines the laser output, frequency, and pulse spacing. If processing cannot be performed at the set speed, the control unit 8 can change the speed when proposing processing conditions (recipes) to the user or when correcting the processing conditions (recipes). Splash range displays information about the width of the splash. If the splash range is narrow, the control unit 8 determines the Z-height or pulse spacing to form a streak (ST) state, or determines processing conditions that produce black streaks.

[0108] The finished profile indicates whether it is the chip profile (the finished profile of wafer 20) after laser processing and finishing (grinding) are completed. It shows information about the state of the modified region (SD (Stealth Dicing) layer) formed when the wafer 20 is irradiated with a laser. In SDBG, since grinding is performed after laser processing, it is possible to ensure that no SD layer remains on the chip profile, depending on the conditions. By ensuring that no SD layer remains on the chip profile, the chip's strength can be improved, and particle size can be reduced. For information on the conditions for setting [No SD Layer] on the finished profile, please refer to... Figure 16 Explanation will be provided. In Figure 16 (a)~ Figure 16 (d) SD1 displays the modified area. At this time, in the machining settings, it is considered to be a completed profile setting on display 150 [without SD layer]. In this case, as... Figure 16 As shown in (a), the control unit 8 determines the processing conditions, setting SD1 in a manner where the length (distance from the lower end of SD1 to the surface 21a) becomes longer than the finished thickness set in the wafer information. At this time, when... Figure 16 As shown in the left figure of (b), when the crack length is longer than the distance from the lower end of SD1 in the case of BHC, or, as Figure 16 As shown in the right figure of (b), when the ST state is formed, and the total length of the crack length and the Si allowance is longer than the distance to the lower end of SD1, the control unit 8 can determine that the [no SD layer] setting can be achieved in the completed cross-section. Furthermore, when... Figure 16As shown in (c), for example, when the ST state is being performed, if the combined length of the crack length and the Si allowance is shorter than the distance to the lower end of SD1, the control unit 8 can determine that the [no SD layer] cannot be set in the completed profile. In this case, the control unit 8 can switch the completed profile to [with SD layer]. Alternatively, based on the user's judgment, the completed profile can be switched to [with SD layer].

[0109] like Figure 15 As shown, in the processing setting input screen, you can select whether to perform two items: [Display / Confirm Recipe Before Processing] and [Confirm Processing Results Before Recipe Correction]. The recipe refers to the information displayed regarding the processing conditions. If [Display / Confirm Recipe Before Processing] is selected, and the recipe (processing conditions) is determined by the control unit 8, the recipe will be displayed before laser processing. If [Display / Confirm Recipe Before Processing] is not selected, and the recipe (processing conditions) is determined by the control unit 8, the recipe will not be displayed, and laser processing will begin. If [Confirm Processing Results Before Recipe Correction] is selected, the actual processing results will be displayed before recipe correction (or recipe confirmation). If [Confirm Processing Results Before Recipe Correction] is not selected, if processing is completed, the actual processing results will not be displayed, and recipe correction (or recipe confirmation) will proceed. By pressing... Figure 15 The [Recipe Creation] shown is executed through the recipe decision process of the control unit 8.

[0110] The control unit 8 is based on the wafer processing information received via the display 150 (in Figures 13-15The control unit 8 determines a formula (processing conditions) including the irradiation conditions of the laser through the laser irradiation unit 3, based on various information received from the setting screen. The control unit 8 determines the formula (processing conditions) corresponding to the wafer processing information received through the display 150 by referring to a database that stores wafer processing information corresponding to formulas (processing conditions). More specifically, the control unit 8 can determine the formula corresponding to the wafer processing information received through the display 150 by a computer program based on an algorithm generated from the database and a feedback control process referring to the database. The database may be possessed by the inspection device 1 or by an external device (network server) capable of communicating with the inspection device 1. For example, depending on the location where the inspection device 1 is installed, there may be cases where the inspection device 1 cannot connect to the network. Even in such cases, the control unit 8 can perform the database function on the inspection device 1 by using a database containing applications installed on electronic media (DVD, CD, USB memory, SD card, etc.). In this structure, although it's impossible to connect to a database centrally managed by a network server, individual database management within inspection device 1 allows for continuous updates by collecting feedback from specific users, thus improving inspection accuracy in a focused and continuous manner. Furthermore, with the database residing on a network server, centralized database management becomes easier, and inspection functions utilizing the database (user DB) can be widely provided through web applications, the release of Web APIs, and the distribution of native applications. Additionally, by continuously updating the database by collecting feedback from a large number of users, the accuracy of the inspection can be comprehensively and continuously improved. Figure 17 This is a diagram illustrating recipe selection from a database. Furthermore, Figure 17 This is merely a diagram illustrating the determination of processing conditions (recipes) using a database, and does not actually display the information stored in the database. For example, in Figure 17 The system displays estimated processing results images for each formulation (described later). In practice, images may not need to be stored in the database. The formulation may include laser irradiation conditions (laser conditions) such as laser wavelength, pulse width, frequency, and speed; processing point settings / LBA settings such as the number of focal points, correction levels for spherical aberration and astigmatism in the focusing state of the processing point, and Z-height when the modified region is formed.

[0111] like Figure 17 As shown, the database stores recipes (processing conditions) corresponding to each wafer processing information. The control unit 8 matches the wafer processing information (input information) received via the display 150, selecting the recipe from the stored wafer processing information that corresponds to the wafer processing information most closely related to the input information as the proposed recipe. Furthermore, the matching process can be performed using AI (Artificial Intelligence). At this time, as... Figure 17As shown, the input information includes [Wafer thickness: 775μm], [Finished thickness: 50μm], [Wafer type: 45°], [Incident surface condition: SiO2 film 50nm], [Resistance (doping level): 1Ω·cm], [Processing method: SDBG (back side)], [BHC condition: BHC], [Number of passes: 2 focal points 1 pass], [Speed: 800mm / sec], [Finished profile: No SD layer], and [Splashing range: Splashing ±30μm]. In this case, the control unit 8 refers to the database and selects the formulation (leftmost formulation) with the following settings as wafer processing information: [Wafer thickness t 775μm], [Finished thickness ~60μm], [BHC condition], [2 focal points 1 pass], [800mm / sec], [No SD layer], and [Splash protection ±10].

[0112] The control unit 8 can also correct the parameter offset by calculation / simulation when there is a difference (parameter offset) between the wafer processing information of the proposed formula selected during the above matching process and the wafer processing information of the input information. The corrected formula is then determined as the proposed formula. For example, the control unit 8 can adjust the Z-height based on the difference in wafer thickness when wafer thicknesses differ, adjust the laser output based on the difference in resistance values ​​when resistance values ​​differ, adjust the laser frequency based on the difference in speed when speeds differ, and adjust the number of focal points based on the difference in the number of passes when the number of passes differs.

[0113] The control unit 8, by referring to a database, extracts multiple candidate processing conditions (recipes) corresponding to the received wafer processing information, and controls the display 150 to display these multiple candidate recipes. Figure 18 In the example shown, control unit 8 selects three candidate recipes. At this time, the input information is the same as described above. Figure 17 The same example applies. Additionally, extract the most recommended formula (in... Figure 18 The text contains recipes for [Proposal 1 Recommendation] and recipes prioritizing assembly line operations. Figure 18 The text contains recipes for "[Proposal 2: Prioritizing Flow Processing]" and recipes prioritizing segmentation boundaries. Figure 18 The document contains recipes with the [Proposal 3: Prioritize Segmentation Boundaries] attribute. The most recommended recipes are those with the highest degree of matching with the input information (wafer processing information). Recipes prioritized for assembly line operations are those with high matching with the input information (wafer processing information) and high speed. Figure 18 The flow-line priority formulation is faster at 1000mm / sec than other formulations. Formulations prioritizing slitting boundaries include those with a high degree of matching with input information (wafer processing information) and a large number of focal points. Figure 18 Formulas with priority given to segmentation boundaries have more focal points (3 focal points) than other formulas. Thus, by extracting multiple formula candidates and displaying them on the display 150, the user can select the desired formula. Furthermore, the control unit 8 can also extract multiple formula candidates from viewpoints other than the aforementioned recommendations, flow-line priority, and segmentation boundary priority, for example, from the viewpoint of quality (suppressing serpentine or particulate matter).

[0114] The control unit 8 can also export the matching degree between multiple recipe candidates and the received wafer processing information (input information), and control the display 150 to display multiple recipe candidates in a display mode that takes into account the matching degree. Specifically, the control unit 8 can also control the display 150 to, for example, display the matching degree of multiple recipe candidates, or distinguish and display recipe candidates with high matching degree from recipe candidates with low matching degree. In addition, the control unit 8 can also control the display 150 to display a recommended order based on the matching degree of multiple recipe candidates. Furthermore, the control unit 8 can also control the display 150 to display various information (recipe characteristics) of the material used by the user to select a recipe from multiple recipe candidates.

[0115] When displaying multiple recipe candidates, the display 150 receives user input to select one recipe candidate. Additionally, the control unit 8 can also determine the recipe candidate selected by the user input received through the display 150 as the recipe (processing conditions).

[0116] The control unit 8 can also further execute the control display 150 to display the determined formula (processing conditions). Figure 19 This is an example of a display screen showing the estimated processing result image (described later). For example... Figure 19 As shown, if a proposed formulation is determined, the content of the proposed formulation, along with the received wafer processing information (input information) and an estimated processing result image (described later), is displayed on display 150. The displayed content of the proposed formulation may also be information included as part of the determined formulation (processing conditions). That is, for the formulation, parameters that are not displayed to the user but are kept internally may also be present. Figure 19 The example shown, as part of the proposed formulation, displays information such as laser irradiation conditions (laser conditions), including wavelength (level 9), pulse width (level 7), frequency (level 12), speed (800 mm / sec), processing point setting / LBA setting, i.e., number of focal points (2-focal-point processing), and the Z-height (Z173, Z155) of the two modified areas SD1 and SD2.

[0117] The control unit 8 can also, based on the determined formula (processing conditions), derive an estimated processing result from the situation where the wafer 20 is irradiated with laser by the laser irradiation unit 3, and control the display 150 to display an image of the estimated processing result, i.e., an estimated processing result image. More specifically, the control unit 8 performs the following: derives an estimated processing result containing information about the modified regions formed on the wafer 20 and the cracks extending from the modified regions, based on the set formula and the situation where the wafer 20 is irradiated with laser by the laser irradiation unit 3; and, considering the location of the modified regions and cracks on the wafer 20 derived as the estimated processing result, controls the display 150 to display an estimated processing result image in which both an image of the wafer 20 and an image of the modified regions and cracks on the wafer 20 are depicted. More specifically, the estimated processing result refers to the estimated location of the modified regions, the extension amount of the cracks extending from the modified regions, and the presence or absence of black streaks, etc., based on the received wafer processing information (input information) and the determined formula. The control unit 8 controls the display 150 to link and display the recipe (processing conditions) and the estimated processing results in images.

[0118] like Figure 19 As shown, the estimated processing result image, along with the received wafer processing information (input information) and recipe, are all displayed on the monitor 150. Figure 19 In the example shown, two columns of modified regions 12a and 12b are depicted on the display 150, and cracks 14 are depicted throughout the two columns of modified regions 12a and 12b. The positions of the depicted modified regions 12a and 12b and cracks 14 are derived from the formula by the control unit 8. At this time, the estimated processing result image on the display 150 shows A: BHC state (BHC state); B: No black stripes (no black stripes generated); C: 65μm, 92μm, 140μm, 171μm (based on surface 21a, the target position at the lower end of modified region 12a is 65μm, the target position at the upper end of modified region 12a is 92μm, the target position at the lower end of modified region 12b is 140μm, and the target position at the upper end of modified region 12b is 171μm); D: 246μm (based on surface 21a, the target position at the upper end of the crack 14 extending from modified region 12b towards back surface 21b is 246μm); E: Wafer thickness t775μm (wafer thickness is 775μm); and a finished thickness of 50μm, etc. Furthermore, the target values ​​for the target positions, etc., may not be displayed as a single point value, but rather as a wide range.

[0119] The display 150 may also receive input of first correction information, which corrects the positions of the modified regions 12a and 12b and the crack 14 displayed as part of the estimated processing result image, while displaying the estimated processing result image. That is, the display 150 may receive input of first correction information, which corrects the target positions of the modified regions 12a and 12b and the target positions of the crack 14. In this case, the control unit 8, based on the first correction information (i.e., information that corrects the target positions of the modified regions 12a and 12b and the target positions of the crack 14), corrects the estimated processing result and various parameters of the formula to form a corrected estimated processing result. It then controls the display 150 to correlate and display the corrected formula with the estimated processing result image based on the corrected estimated processing result.

[0120] Alternatively, the display 150 may receive input of second correction information for revising the recipe while displaying the processing conditions (recipe). In this case, the control unit 8 corrects various parameters of the recipe based on the second correction information, and based on the corrected recipe, corrects the estimated processing result, controls the display 150 to image-correlate the corrected recipe with the estimated processing result based on the corrected estimated processing result, and displays the image.

[0121] The control unit 8 can also control the display 150 to display the estimated processing result image and the inspection condition proposal result (refer to...). Figure 19 All are displayed. In the inspection condition proposal results, based on the formula and estimated processing result image, the recommended inspection conditions are displayed. (Displayed in...) Figure 19 The inspection of the proposed inspection conditions, specifically those with letters A through E, corresponds to the content of A through E in the estimated processing result image described above. That is, in... Figure 19 The proposed inspection conditions are as follows: For A: BHC state inspection, A: BHC inspection and A: BHC boundary inspection are recommended; for B: black stripe inspection, B: black stripe inspection is recommended; for C: modified region (SD layer) position inspection, C: SD layer position inspection is recommended; for D: upper end position inspection of crack 14, D: upper crack position inspection is recommended; for E: wafer thickness inspection, E: wafer thickness inspection is recommended. In the BHC boundary inspection, the backside condition (ST or BHC) at each Z height is displayed, the position of the upper crack tip, the change in the position of the upper crack tip, and the length of the lower crack, etc. Additionally, as... Figure 19 As shown, for each check displayed in the check condition proposal results, the user can choose whether to execute it. After selecting the check to execute, press the button as shown below. Figure 19 The [Processing Start] button indicates that processing has begun. After processing is complete, the selected checks will be performed.

[0122] Regarding the display of the estimated processing result image mentioned above, refer to Figure 20 and Figure 21 A more detailed explanation follows. Here is an example illustrating how the actual cross-sectional condition is schematically displayed in the estimated processing result image. Figure 20 (a) shows the actual state of various cross-sections. Figure 20 (b) shows as Figure 20 The image of the estimated processing result for a section perpendicular to the processing line shown in (a). Figure 20 (a) and (b) show the corresponding states above and below. For example... Figure 20 As shown in (b), in the estimated processing result image of a cross-section perpendicular to the processing line, the modified region (SD layer) is displayed in an elliptical (or circular) shape, and cracks are shown as lines, schematically illustrating the interconnectedness of cracks throughout the modified region. Based on such an estimated processing result image, the BHC state can be visually displayed ( Figure 20 (b) the leftmost state), ST state and the crack breaks off along the way (from Figure 20 (b) from the left side of the second state), BHC state and the crack breaks off along the way (from Figure 20 (b) from the right side of the second state), BHC state and producing end face concavity and convexity ( Figure 20 (b) the rightmost state, etc. Additionally, regarding the unevenness of the end face, based on the degree of the serpentine cracking, it can also present as horizontal unevenness ( Figure 20 (b) The rightmost state). Thus, the control unit 8 controls the display 150 to display an estimated processing result image of a cross-section perpendicular to the laser-irradiated processing line.

[0123] Figure 21 (a) shows the actual state of various cross-sections. Figure 21 (b) shows as Figure 21 The image shows the estimated processing result for a cross-section with the processing line horizontal, as shown in (a). Figure 21 (a) and (b) are displayed in the corresponding states above and below. For example... Figure 21 As shown in (b), the estimated processing result image, in a cross-section horizontally aligned with the processing line, displays the modified area (SD layer) in, for example, as a strip. In the image with a cross-section horizontally aligned with the processing line, the modified area can be displayed for each pulse; therefore, an image of the pulse interval can be displayed. For cracks, they are displayed as surfaces rather than lines, thus allowing differentiation through color differences, etc. Based on such an estimated processing result image, the BHC state can be visually displayed (…). Figure 21 (b) the leftmost state), ST state and the crack breaks off along the way (from Figure 21 (b) from the left side of the second state), BHC state and the crack breaks off along the way (from Figure 21(b) from the right side of the second state), BHC state and producing end face concavity and convexity ( Figure 21 (b) the rightmost state, etc. Regarding the concavity and convexity of the end face, it can be displayed based on the cracked serpentine area. Figure 20 (the rightmost state of (b)). Thus, the control unit 8 controls the display 150 to display an estimated processing result image of a horizontal cross-section of the laser-irradiated processing line.

[0124] (Processing)

[0125] During processing, the control unit 8 controls the laser irradiation unit 3 to irradiate the wafer 20 with a laser according to the determined processing conditions (formula). Specifically, the control unit 8 controls the laser irradiation unit 3 to irradiate the wafer 20 with a laser, thereby forming modified regions and cracks extending from the modified regions on the wafer 20. The control unit 8 initiates processing by pressing "[Processing Start]" on the display 150 (see reference). Figure 19 ), and begin processing.

[0126] (Processing results obtained)

[0127] In the processing of the processing results, the control unit 8 controls the camera unit 4 to capture an image of the processed wafer 20, thereby obtaining the laser processing results of the wafer 20 after laser irradiation. Specifically, the control unit 8 controls the camera unit 4 to output transmissive light to the wafer 20 to capture an image of the wafer 20, obtaining information including the modified areas formed on the wafer 20 by laser irradiation and the cracks extending from the modified areas.

[0128] As described above, after laser processing, the various checks selected by the user are performed (see reference). Figure 19 For E: wafer thickness inspection (derivation of wafer thickness) in each inspection, refer to... Figure 22 and Figure 23 The following explanation is provided. In the inspection apparatus 1, the thickness of the wafer 20 can be measured based on information obtained from the laser processing via the laser irradiation unit 3 and the internal observation via the imaging unit 4. Specifically, the control unit 8 performs: a first process, which controls the laser irradiation unit 3 to irradiate the wafer 20 with laser light, thereby forming a modified region inside the wafer 20; and a second process, which, based on the signal output from the imaging unit 4 that detects light propagating on the wafer 20, derives the position of the modified region, and then, based on the derived position of the modified region and the set formula (processing conditions), derives the thickness of the wafer 20.

[0129] Figure 22 This is a derived diagram illustrating wafer thickness. In Figure 22The image shows the situation where a laser is irradiated from the back side 21b of the wafer 20, forming the modified region 12a. The control unit 8 controls the camera unit 4 to move the focus F in the depth direction (Z direction) to acquire multiple images, and then derives from these images: a: the Z position of the upper end of the modified region 12a (SD1), and c: the Z position of the virtual image of the end of the modified region 12a (SD1) on the surface 21a side. That is, in the second process described above, the control unit 8 derives the Z position (position a) of the end of the modified region 12a on the back side 21b side and the Z position (position c) of the virtual image of the end of the modified region 12a on the surface 21a side based on the signal output from the camera unit 4 that detects light. In addition, in the case where the wafer 20 has a functional element layer 22 (pattern), the control unit 8 can control the camera unit 4 to move the focus F in the depth direction (Z direction) to derive b: the Z position of the patterned surface. These Z positions, as explained below, are positions with the back surface 21b of wafer 20 as a reference point. The Z positions of wafer 20, which serve as reference points, can be derived, for example, by identifying cracks extending toward the back surface 21b using a visible camera with a height setting using an imaging unit 4 (internal observation detector) or a height-set visible camera. Alternatively, they can be derived by identifying the Z height with a visible camera when setting the height before laser processing. Or, when a laser is incident from the patterned surface, the focal position of the pattern can be determined by measuring the alignment before laser processing or during internal observation after laser processing.

[0130] The control unit 8 can derive the thickness of wafer 20 using three different methods. In the first method, the control unit 8 derives the thickness of wafer 20 based on b: the Z-position of the patterned surface. This first method, as described above, is only applicable when wafer 20 is a wafer with a functional element layer 22 (pattern). In the second and third methods, the control unit 8 derives the thickness of wafer 20 based on c: the Z-position of the virtual image at the end of the surface 21a side of the modified region 12a (SD1), and the formulation.

[0131] In the second method, the control unit 8 first derives the width of the modified region 12a based on the formula. Specifically, the control unit 8 stores, for example... Figure 23 The database showing the wafer thickness (a database corresponding to the processing conditions and the width of the modified region) is used to derive the width of the modified region 12a (SD layer width) corresponding to the laser energy, pulse waveform, pulse spacing, and focusing state shown in the formula (processing conditions). Furthermore, the control unit 8 derives the thickness of the wafer 20 based on the derived width of the modified region 12a, c: the Z-position of the virtual image at the end of the modified region 12a (SD1) on the surface 21a side, and a: the Z-position of the upper end of the modified region 12a (SD1). For example... Figure 22As shown, if the width of the modified region 12, c: the Z position of the virtual image at the end of the modified region 12a (SD1) on the surface 21a side, and a: the Z position of the upper end of the modified region 12a (SD1) are added together, the result is twice the thickness of the wafer 20. Therefore, the control unit 8 can derive the thickness of the wafer 20 by dividing the sum of the width of the modified region 12, c: the Z position of the virtual image at the end of the modified region 12a (SD1) on the surface 21a side, and a: the Z position of the upper end of the modified region 12a (SD1) by 2.

[0132] In the third method, the control unit 8 first, based on the formula, derives the estimated end position of the end of the modified region 12a on the surface 21a side, which is estimated from the laser processing depth (Z-height) of the wafer 20. The control unit 8 then derives the end position considering the DZ rate (the end position of the modified region 12a on the surface 21a side considering the DZ rate) based on the estimated end position and a constant (DZ rate) considering the refractive index of silicon in the wafer 20. Finally, based on the end position considering the DZ rate and the Z-position of the virtual image of the end of the modified region 12a (SD1) on the surface 21a side, the thickness of the wafer 20 is derived. Figure 22 As shown, by adding the end position considering the aforementioned DZ rate and the Z position of the virtual image at the end of the modified region 12a (SD1) on the surface 21a side, the thickness is formed to be twice that of the wafer 20. Therefore, the control unit 8 can derive the thickness of the wafer 20 by dividing the value obtained by adding the end position considering the aforementioned DZ rate and the Z position of the virtual image at the end of the modified region 12a (SD1) on the surface 21a side by 2.

[0133] The judgment results of each inspection include information on the laser processing results obtained by control unit 8. In the following explanation, the [inspection judgment results] include information on the [laser processing results]. Figure 24 This is an example of a screen displaying a rejection (NG) result. For example... Figure 24 As shown, the control unit 8 controls the display 150 to display the inspection and judgment results, which include information about the laser processing results. Alternatively, as shown... Figure 24 As shown, the control unit 8 controls the display 150 to display the estimated processing result image and the inspection judgment result containing information about the laser processing result.

[0134] like Figure 24As shown, the estimated processing result image on display 150 displays: A: BHC state (BHC state); B: No black stripes (no black stripes generated); C: 65μm, 92μm, 140μm, 171μm (based on surface 21a, the target position at the lower end of modified region 12a is 65μm, the target position at the upper end of modified region 12a is 92μm, the target position at the lower end of modified region 12b is 140μm, and the target position at the upper end of modified region 12b is 171μm); D: 246μm (based on surface 21a, the target position at the upper end of the crack 14 extending from modified region 12b towards back surface 21b is 246μm); E: Wafer thickness t775μm (wafer thickness is 775μm); and finished thickness is 50μm. This estimated processing result image state would be formed if laser processing were performed according to the formula. However, the inspection results show that A: ST (ST state); B: no black stripes; C: 74μm, 99μm, 148μm, 174μm (based on surface 21a, the lower end of modified region 12a is 74μm, the upper end of modified region 12a is 99μm, the lower end of modified region 12b is 148μm, and the upper end of modified region 12b is 174μm); D: 211μm (based on surface 21a, the upper end of crack 14 extending from modified region 12b towards back surface 21b is 211μm); E: wafer thickness t783μm (wafer thickness is 783μm); and the finished thickness is 50μm.

[0135] (Processing condition evaluation and handling)

[0136] Control unit 8 makes an inspection judgment based on information including laser processing results (refer to...). Figure 24 The control unit 8 evaluates the effectiveness of the formulation (processing conditions) by comparing the inspection and judgment results, which include information about the laser processing results, with the estimated processing results considering the formulation determined based on the wafer processing information. At this time, if... Figure 24 As shown, the deviation between the estimated target value of the processed image and the value of the inspection judgment result occurs in each inspection selected by the user (refer to...). Figure 19In the process, at least A: BHC inspection, C: SD layer position inspection, D: upper crack position inspection, and E: wafer thickness inspection are all rejected (NG). The reason for forming ST instead of BHC could be that the user-set wafer thickness (775μm) was inappropriate in order to achieve E: wafer thickness t783μm. This could result in the wafer 20 being thicker than set, causing the modified region to shift to a shallower direction or becoming thinner than expected. In such cases, the control unit 8 evaluates the formulation (processing conditions) as inappropriate. Furthermore, the control unit 8 can also determine whether the positional shift of the modified region (SD layer) is due to hardware or formulation issues based on other data such as AF follow-up. Here, wafer thickness is used as an example to illustrate the reasons for rejection, but it is conceivable that various factors such as hardware defects, insufficient limits of the formulation in the database, and wafer doping could also cause rejection.

[0137] The control unit 8 can also further modify the formulation (processing conditions) based on the inspection judgment results, which include information about the laser processing results, if the evaluation formula (processing conditions) is inappropriate. For example, as described above, if the wafer 20 is thicker than expected, causing an inspection NG (Not Acceptable Error), the control unit 8 can perform Z-height correction, output correction, and focus correction, making the formulation modification decision while performing BHC boundary checks a correction. Figure 24 As shown, the control unit 8 controls the display 150 to display the inspection and judgment results along with the recommended corrections. The control unit 8 can also control the display 150 to display the priority of each correction. The display 150 can also receive user input such as priority changes and partial deletion of corrections. The control unit 8 responds to the [Correction Start] button pressed on the display 150 (see reference). Figure 24 The process of correcting the display on the monitor 150 begins. In cases where the wafer 20 is thicker than expected, corrections are made, for example, by reducing the Z-height to a deeper position by an amount equivalent to the wafer thickness, or by increasing the output by 0.1W, to ensure the width of the modified area. Furthermore, if, for example, the BHC boundary check results show a small boundary, the focusing correction amount is adjusted to improve focusing performance. Through this process, the control unit 8 outputs the final (corrected) formula.

[0138] Figure 25 This is an example of a screen displaying the check result (OK). For example... Figure 25 As shown, after the correction is implemented, the control unit 8 controls the display 150 to display the estimated processing result image, the inspection and judgment results, and the corrected formula (processing conditions). Figure 25For example, the inspection results show: A: BHC (BHC state); B: No black streaks; C: 64μm, 93μm, 142μm, 173μm (based on surface 21a, the lower end of modified region 12a is 64μm, the upper end of modified region 12a is 93μm, the lower end of modified region 12b is 142μm, and the upper end of modified region 12b is 173μm); D: 244μm (based on surface 21a, the upper end of the crack 14 extending from modified region 12b towards back surface 21b is 244μm); E: Wafer thickness t783μm (wafer thickness is 783μm); and the finished thickness is 50μm. Thus, by implementing corrections for wafer thicknesses different from the expected values, the inspection results are deemed OK. Furthermore, when revising the formula (processing conditions), the control unit 8 updates the database that stores the wafer processing information corresponding to the processing conditions (formula) based on information including the revised formula. For example, if a formula with a wafer thickness (783 μm) as shown in the inspection result does not exist in the database, the control unit 8 re-registers the formula with a wafer thickness (783 μm) as the revised formula in the database. When re-registering the formula in the database, the user's original wafer, processing condition name, etc., can be registered, so that when processing the same wafer, the formula in the database can be retrieved from that name. In addition, the control unit 8 also stores results that are rejected during inspection in the database, thereby improving the accuracy of subsequent formula decisions.

[0139] [Inspection Method]

[0140] Reference Figure 26 The inspection method for this embodiment is explained. Figure 26 This is a flowchart of the inspection method. Figure 26 The flowchart shows the processing conditions for the preprocessing of forming a modified region on the wafer 20 in the inspection method to be performed by the inspection device 1.

[0141] like Figure 26 As shown, in the processing condition export process, firstly, the display 150 receives user input containing information about the wafer 20 and wafer processing information for the laser processing target of the wafer 20 (step S1, first process). Specifically, the display 150 receives, as follows: Figure 13 The processing method shown, such as Figure 14 The wafer information shown, and such as Figure 15 The user input for the processing settings shown.

[0142] Next, the control unit 8, by referring to the database, determines (automatically selects) the wafer processing information received via the display 150. Figures 13-15The control display 150 receives various information (including information received from the setting screen) and displays the corresponding formula (processing conditions). The automatically selected formula (step S2, second process) is then displayed (proposed). The display 150 shows the formula, estimated processing result image, inspection conditions, etc. (see reference). Figure 19 Additionally, by pressing the [Processing Start] button on the display 150, the user determines the formula (step S3), and based on the determined formula, begins the laser irradiation process on the wafer 20 (step S4, third process).

[0143] Next, the control unit 8 makes a judgment based on the inspection results, which include information about the laser processing results (refer to...). Figure 24 The process begins with evaluating the formulation (processing conditions) (step 4) and determining whether the formulation is appropriate (evaluation OK) (step S5). In step S5, if the formulation is determined to be inappropriate (evaluation NG), the formulation is automatically corrected based on the evaluation result (step S6). For example, if the wafer 20 is thicker than expected, causing an NG evaluation, the control unit 8 performs Z-height correction, output correction, and focusing correction, etc. Then, the processing is repeated from step S4.

[0144] Additionally, if the formula is deemed appropriate (evaluation OK) in step S5, it is determined whether the formula has not been changed at all (whether the correction process in step S6 has not been implemented at all) (step S7). If the formula has been changed, the changed formula (new formula) is logged into the database (step S8), and the process ends.

[0145] [Effects]

[0146] Next, the effects of the inspection device 1 in this embodiment will be explained.

[0147] The inspection apparatus 1 of this embodiment includes: a laser irradiation unit 3 for irradiating a wafer 20 with a laser; an imaging unit 4 for capturing images of the wafer 20; a display 150 for receiving information input; and a control unit 8. The display 150 receives input including information about the wafer 20 and wafer processing information for the laser processing target of the wafer 20. The control unit 8 is configured to perform: determining a formula (processing conditions) including the irradiation conditions of the laser irradiation unit 3 based on the wafer processing information received through the display 150; controlling the laser irradiation unit 3 to irradiate the wafer 20 with a laser according to the determined formula; capturing images of the wafer 20 by controlling the imaging unit 4 to obtain the laser processing result of the wafer 20 irradiated by the laser; and evaluating the formula based on the laser processing result.

[0148] In the inspection device 1 of this embodiment, if wafer processing information is input, a formula is determined based on that wafer processing information. Thus, by automatically determining the formula based on the input wafer processing information, it is easier to determine the formula (processing conditions) than, for example, a situation where the user repeatedly performs laser processing while adjusting processing conditions to guide the appropriate formula. Furthermore, the inspection device 1 evaluates the formula based on the laser processing results performed with the determined formula. Therefore, based on the evaluation results, for example, formula changes can be made as needed, and the formula (processing conditions) can be appropriately optimized. As described above, an appropriate formula (processing conditions) can be easily determined based on the inspection device 1.

[0149] The control unit 8 determines the recipe corresponding to the wafer processing information received via the display 150 by referring to a database that stores wafer processing information and processing conditions. By determining the recipe based on information from the database, the recipe determination process can be simplified.

[0150] The control unit 8 can also evaluate the formula based on the laser processing results and wafer processing information. Therefore, the formula can be evaluated appropriately based on, for example, whether actual laser processing has been performed to achieve the laser processing target for wafer 20.

[0151] The control unit 8 can also further modify the formula based on the laser processing results if the formula is deemed inappropriate. Therefore, in cases where the formula is inappropriate, it can be automatically changed based on the laser processing results, making formula optimization easier.

[0152] The control unit 8 can also further update the database based on information including the revised recipe if the recipe has been modified. In this way, by registering the revised recipe in the database, a more appropriate recipe can be determined when processing conditions are subsequently decided based on wafer processing information input.

[0153] The control unit 8 can also further execute the control display 150 to display the determined formula. By displaying the (user-proposed) formula, the user can be notified which formula to use for processing, and the formula can be changed as needed based on the user's instructions.

[0154] The control unit 8 can also extract multiple candidate recipes corresponding to the received wafer processing information by referring to a database, and control the display 150 to display these multiple candidate recipes. Thus, when there are multiple recipes corresponding to the processing information of the (suitable) wafer 20, they can be displayed as candidate recipes (suggested by the user).

[0155] The display 150 can also receive user input selecting a recipe candidate when multiple recipe candidates are displayed. The control unit 8 will then determine the recipe candidate selected by the user input received through the display 150 as the recipe. Thus, based on the user's instructions, the desired recipe is determined from multiple recipe candidates.

[0156] The control unit 8 can also refer to the database to export the matching degree between multiple recipe candidates and wafer processing information, and control the display 150 to display multiple recipe candidates in a way that takes into account the matching degree. Thus, for example, the matching degree can be displayed to the user, or recipe candidates with high matching degrees can be distinguished from and displayed with low matching degrees, making it easier for the user to select the appropriate recipe from multiple recipe candidates.

[0157] The control unit 8 can also, based on the determined formula, export an estimated processing result of the laser irradiation unit 3 irradiating the wafer 20 with laser, and control the display 150 to display an image of the estimated processing result, i.e., an estimated processing result image. By displaying a processing image of the laser processing based on the formula, the validity of the formula is shown to the user, making it easier for the user to determine whether to make formula changes, etc.

[0158] The display 150 can also receive input of first correction information for correcting the processing position of the estimated processing result image while displaying the estimated processing result image. The control unit 8 corrects the estimated processing result based on the first correction information and modifies the recipe to form a corrected estimated processing result. Therefore, the recipe can be easily corrected based on correction instructions from a user who has confirmed the estimated processing result image. For the user, if a correction instruction for the estimated processing result image is issued to achieve the desired processing result, the recipe can be automatically corrected to conform to the correction instruction, thus making it easy to perform the desired processing.

[0159] The display 150 can also receive input of second correction information for formula modification while the formula is displayed. The control unit 8 modifies the formula based on the second correction information and modifies the estimated processing result based on the modified formula. Thus, the formula can be easily modified based on the user's correction instructions, and an estimated processing result image of the modified formula can be appropriately displayed.

[0160] The control unit 8 can also control the display 150 to show the laser processing results. Thus, the laser processing results according to the formula can be displayed to the user.

[0161] Furthermore, the control unit 8 can also control the display 150 to display a message urging correction if the wafer processing information received through the display 150 is inappropriate. Thus, when inappropriate wafer processing information is input, the user can be prompted to make corrections.

[0162] The wafer processing information may also include information showing the finished thickness of wafer 20. Thus, for example, the finished thickness of wafer 20 can be considered in cases where it is ground after stealth block dicing, allowing for appropriate formulation determination.

[0163] The wafer processing information may also include: crack arrival information showing whether the crack, extending from the modified region formed when the wafer 20 is irradiated with a laser, reaches or does not reach the surface of the wafer 20; and information showing the hypothetical extension amount of the crack caused by grinding after laser irradiation in cases where the crack arrival information shows that the crack has not reached the surface of the wafer 20. Therefore, in cases where, for example, grinding is performed after stealth block cutting to extend the crack to the surface of the wafer 20, the amount of crack extension caused by grinding can be appropriately considered to determine the formulation.

[0164] The wafer processing information may also include a finished profile of the wafer 20 after laser processing and grinding, showing the state of the modified areas formed when the wafer 20 is irradiated with a laser. Therefore, in cases where the user desires to eliminate modified areas on the finished profile for purposes such as increasing chip strength or reducing particle size, this finished profile information can be appropriately considered when determining the formulation.

[0165] The above describes this embodiment; however, the present invention is not limited to the above-described embodiment. For example, as... Figure 1 As shown, the inspection device 1 has a display 150 that displays images of estimated processing results, etc. However, it is not limited to this and may also include, for example, [other devices]. Figure 27 The inspection device 1A shown is similar in that it does not have a display. Except for the lack of a display, the inspection device 1A has the same structure as the inspection device 1. In this case, the control unit 8 of the inspection device 1A considers, for example, the location of the modified region and the cracked wafer derived from the estimated processing result, and compares the image of the wafer with the image of the modified region and the cracked wafer. Figure 1 The estimated processing result image is output (sent) to an external device, etc. Alternatively, the estimated processing result image, etc., may be displayed on an external device other than the inspection device 1A. That is, the estimated processing result image, etc., can be displayed on another device (PC, etc.) that can communicate with the inspection device 1A. Therefore, even if the inspection device 1A does not have a display, the estimated processing result image, etc., can be displayed through another device that can communicate with the inspection device 1A.

[0166] Alternatively, it can be like Figure 28 As shown, in the processing system 600, which includes the aforementioned inspection device 1A and a dedicated display device 550, an estimated processing result image is generated and displayed. In this case, the control unit 8 of the inspection device 1A considers, for example, the locations of modified areas and cracked wafers derived from the estimated processing result, and compares the wafer image with the images of the modified areas and cracks on the wafer. Figure 1 The estimated processing result image is sent to the display device 550. The display device 550 displays the estimated processing result image received from the inspection device 1A. Based on such a processing system 600, the estimated processing result image sent by the inspection device 1A can be appropriately displayed on the display device 550 of an external device.

[0167] Furthermore, in the embodiment, it is described that the display shows an image of the wafer along with images of the modified areas and cracks on the wafer. Figure 1 The estimated processing result image is depicted, but it is not limited to this. That is, the control unit does not necessarily need to display the estimated processing result image on the display. For example, it can also export an estimated processing result that includes information on the modified region formed on the wafer and the cracks extending from the modified region, and control the display to display the information of the estimated processing result. The information of the estimated processing result may not be an image of the wafer, modified region, and cracks, but only information on the location of the modified region and cracks (that is, it may not contain an image).

[0168] In addition, the process of exporting processing conditions describes the implementation of the above-mentioned processing result image display process and wafer thickness export process. However, the processing of the processing result image display process and wafer thickness export process can also be implemented in processes other than processing condition export process, such as various processes after exporting processing conditions.

[0169] Furthermore, in the embodiment described, the inspection device 1 determines the formula (processing conditions) based on wafer processing information and derives an estimated processing result, but it is not limited to this. That is, the control unit of the inspection device can derive an estimated processing result based on the wafer processing information, and then determine the formula (processing conditions) based on the estimated processing result. In this way, by automatically determining the processing conditions by inputting wafer processing information, it is easier to determine the processing conditions than, for example, by repeatedly performing laser processing while adjusting the processing conditions to derive appropriate processing conditions.

[0170] Symbol Explanation

[0171] 1, 1A... Inspection device; 3... Laser irradiation unit; 4... Camera unit; 8... Control unit; 20... Wafer; 150... Display.

Claims

1. An inspection device, wherein, have: The irradiation section, which irradiates the wafer with laser light; The camera unit takes images of the wafer; The input section receives and processes information. Control Department; and The display section, which displays information, The input unit receives wafer processing information, which includes information about the wafer and the laser processing target for that wafer. The control unit, The system is configured to perform the following actions: determining processing conditions, including irradiation conditions of the laser passing through the irradiation unit, based on the wafer processing information received through the input unit; controlling the irradiation unit to irradiate the wafer with the laser according to the determined processing conditions; obtaining laser processing results of the wafer irradiated by the laser by controlling the imaging unit to image the wafer; and evaluating the processing conditions based on the laser processing results. To further execute: control the display unit in a manner that displays the determined processing conditions. The display unit is controlled to generate an estimated processing result based on the processing conditions, whereby the wafer is irradiated with the laser by the irradiation unit, and to display an estimated processing result image as an image of the estimated processing result, which is a cross-section of the processing line irradiated with the laser that is vertical or horizontal.

2. The inspection device as claimed in claim 1, wherein, The control unit determines the processing conditions corresponding to the wafer processing information received by the input unit by referring to a database that stores the wafer processing information and the processing conditions in correspondence.

3. The inspection device as described in claim 2, wherein, The control unit evaluates the processing conditions based on the laser processing results and the wafer processing information.

4. The inspection device as claimed in claim 2, wherein, The control unit is configured to further perform the following: if the processing conditions are deemed inappropriate, correct the processing conditions based on the laser processing results.

5. The inspection device as claimed in claim 3, wherein, The control unit is configured to further perform the following: if the processing conditions are deemed inappropriate, correct the processing conditions based on the laser processing results.

6. The inspection device as claimed in claim 4, wherein, The control unit is configured to further perform the following: if the processing conditions are corrected, update the database based on information including the corrected processing conditions.

7. The inspection apparatus as claimed in claim 5, wherein, The control unit is configured to further perform the following: if the processing conditions are corrected, update the database based on information including the corrected processing conditions.

8. The inspection device as claimed in claim 1, wherein, The control unit extracts multiple processing condition candidates as alternatives to the processing conditions corresponding to the received wafer processing information by referring to a database, and controls the display unit to display these multiple processing condition candidates.

9. The inspection device as claimed in claim 8, wherein, When the input unit displays the plurality of processing condition candidates on the display unit, it receives user input indicating that one of the processing condition candidates is selected. The control unit will determine the processing condition as the candidate processing condition selected by the user input received through the input unit.

10. The inspection apparatus as claimed in claim 8, wherein, The control unit controls the display unit to output the degree of matching between the multiple processing condition candidates and the wafer processing information, and to display the multiple processing condition candidates in a display mode that takes into account the degree of matching.

11. The inspection apparatus as claimed in claim 9, wherein, The control unit controls the display unit to output the degree of matching between the multiple processing condition candidates and the wafer processing information, and to display the multiple processing condition candidates in a display mode that takes into account the degree of matching.

12. The inspection apparatus as claimed in claim 1, wherein, When the estimated processing result image is displayed on the display unit, the input unit receives input of first correction information related to the correction of the processing position of the estimated processing result image. The control unit corrects the estimated processing result based on the first correction information, and corrects the processing conditions in a manner that results in the corrected estimated processing result.

13. The inspection apparatus as claimed in claim 1, wherein, When the processing conditions are displayed on the display unit, the input unit receives input of second correction information related to the correction of the processing conditions. The control unit corrects the processing conditions based on the second correction information, and corrects the estimated processing result based on the corrected processing conditions.

14. The inspection apparatus as claimed in claim 12, wherein, When the processing conditions are displayed on the display unit, the input unit receives input of second correction information related to the correction of the processing conditions. The control unit corrects the processing conditions based on the second correction information, and corrects the estimated processing result based on the corrected processing conditions.

15. The inspection device according to any one of claims 1 to 14, wherein, The control unit controls the display unit in a manner that displays the laser processing results.

16. The inspection device according to any one of claims 1 to 14, wherein, If the wafer processing information received by the input unit is inappropriate, the control unit controls the display unit by displaying a message urging correction.

17. The inspection device according to any one of claims 1 to 14, wherein, The wafer processing information includes information showing the finished thickness of the wafer.

18. The inspection apparatus as claimed in claim 15, wherein, The wafer processing information includes information showing the finished thickness of the wafer.

19. The inspection apparatus as claimed in claim 16, wherein, The wafer processing information includes information showing the finished thickness of the wafer.

20. The inspection device according to any one of claims 1 to 14, wherein, The wafer processing information includes: crack arrival information showing whether a crack extending from a modified region formed when the wafer is irradiated with the laser reaches or does not reach the surface of the wafer; and information showing the hypothetical extension amount of the crack caused by grinding after laser irradiation in cases where the crack arrival information shows that the crack has not reached the surface of the wafer.

21. The inspection apparatus as claimed in claim 15, wherein, The wafer processing information includes: crack arrival information showing whether a crack extending from a modified region formed when the wafer is irradiated with the laser reaches or does not reach the surface of the wafer; and information showing the hypothetical extension amount of the crack caused by grinding after laser irradiation in cases where the crack arrival information shows that the crack has not reached the surface of the wafer.

22. The inspection apparatus as claimed in claim 16, wherein, The wafer processing information includes: crack arrival information showing whether a crack extending from a modified region formed when the wafer is irradiated with the laser reaches or does not reach the surface of the wafer; and information showing the hypothetical extension amount of the crack caused by grinding after laser irradiation in cases where the crack arrival information shows that the crack has not reached the surface of the wafer.

23. The inspection device as claimed in any one of claims 1 to 14, wherein, The wafer processing information includes: a completed cross-section of the wafer after laser processing and grinding, showing the state of the modified region formed when the wafer is irradiated with the laser.

24. An inspection device, wherein, have: The irradiation section, which irradiates the wafer with laser light; The input section receives and processes information. Control Department; and The display section, which displays information, The input unit receives wafer processing information, which includes information about the wafer and the laser processing target for that wafer. The control unit, The configuration is configured to perform: based on the wafer processing information received through the input unit, derive an estimated processing result when the wafer is irradiated with the laser through the irradiation unit; and based on the estimated processing result, determine processing conditions including the irradiation conditions of the laser through the irradiation unit. To further execute: control the display unit in a manner that displays the determined processing conditions. The display unit is controlled to generate an estimated processing result based on the processing conditions, whereby the wafer is irradiated with the laser by the irradiation unit, and to display an estimated processing result image as an image of the estimated processing result, which is a cross-section of the processing line irradiated with the laser that is vertical or horizontal.

25. An inspection method, wherein, Include: The first step involves receiving wafer processing information as input, which includes information about the wafer and the laser processing target for that wafer. The second step, based on the wafer processing information received in the first step, determines processing conditions including irradiation conditions of the laser irradiating the wafer. The third step involves irradiating the wafer with the laser based on the processing conditions determined in the second step; and The fourth step evaluates the processing conditions based on the laser processing results of the wafer irradiated by the laser in the third step. Based on the determined processing conditions, an estimated processing result is derived when the wafer is irradiated with the laser, and an estimated processing result image is displayed as an image of the estimated processing result, showing a cross-section of the processing line irradiated with the laser as vertical or horizontal.

26. An inspection method, wherein, Include: The first step involves receiving wafer processing information as input, which includes information about the wafer and the laser processing target for that wafer. The second step, based on the wafer processing information received in the first step, derives an estimated processing result when the wafer is irradiated with a laser, and displays an estimated processing result image as an image of the estimated processing result, showing a cross-section of the laser-irradiated processing line that is vertical or horizontal; and The third step, based on the estimated processing results derived from the second step, determines the processing conditions, including the laser irradiation conditions.

Images