Electronic device

Abstract

An electronic device includes a first substrate, a diode element, a wire, and an adhesive layer. The first substrate includes a first surface, a second surface, and a side surface. The second surface is opposite to the first surface, and the side surface connects the first surface and the second surface. The diode element is disposed on the first surface. The wire electrically connects the diode element, wherein the wire has a first portion disposed on the side surface of the first substrate. The adhesive layer is disposed on the diode element and the first surface, wherein the first portion of the wire is also disposed on a side surface of the adhesive layer.

Description

[0001] This application is a divisional application of the invention patent application filed on December 24, 2019, with application number 201911346314.6 and title "Electronic Device". Technical Field

[0002] This invention relates to an electronic device having a wavelength selective layer. Background Technology

[0003] Modern electronic devices typically feature displays to provide information to users. Currently, the industry continues to focus on improving the reliability and display quality of electronic devices. Summary of the Invention

[0004] According to some embodiments of the present invention, an electronic device is provided, comprising a first substrate, a diode element, a wire, and an adhesive layer. The first substrate includes a first surface, a second surface, and a side surface, the second surface being opposite to the first surface and the side surface connecting the first surface and the second surface. The diode element is disposed on the first surface. The wire is electrically connected to the diode element, wherein the wire has a first portion disposed on the side surface of the first substrate. The adhesive layer is disposed on the diode element and the first surface, wherein the first portion of the wire is also disposed on one side surface of the adhesive layer.

[0005] According to some embodiments of the present invention, an electronic device is provided, comprising a first substrate, a plurality of diode elements, and a plurality of wires. The first substrate includes a first surface, a second surface, and a side surface, wherein the second surface is opposite to the first surface and the side surface is connected to the first surface and the second surface. The plurality of diode elements are disposed on the first surface. The plurality of wires are electrically connected to the plurality of diode elements, wherein each of the plurality of wires has a first portion, and the plurality of first portions are disposed on the side surface of the first substrate and arranged at intervals. Attached Figure Description

[0006] Figure 1 The diagram shown is a schematic diagram of an electronic device according to a first embodiment of the present invention.

[0007] Figure 2 As shown Figure 1 An enlarged schematic diagram of a first example of a region R1 extending along the direction Dy from the middle region R1'.

[0008] Figure 3 The image shows along Figure 2 A schematic diagram of the structural cross-section along line B-B'.

[0009] Figure 4 As shown Figure 1 An enlarged schematic diagram of a second example of region R1 extending along the direction Dy from the middle region R1'.

[0010] Figure 5 The image shows along Figure 4 A schematic diagram of the structural cross-section along line C-C'.

[0011] Figure 6 As shown Figure 1 A schematic diagram of the cross section A-A' of the central region R2.

[0012] Figure 7 The diagram shown is a cross-sectional view of an electronic device according to a second embodiment of the present invention.

[0013] Figure 8 The diagram shown is a cross-sectional view of an electronic device according to a third embodiment of the present invention.

[0014] Figure 9 The diagram shown is a cross-sectional view of an electronic device according to a fourth embodiment of the present invention.

[0015] Figure 10 The diagram shown is a cross-sectional view of an electronic device according to a fifth embodiment of the present invention.

[0016] Figure 11 The diagram shown is a cross-sectional view of an electronic device according to the sixth embodiment of the present invention.

[0017] Explanation of reference numerals in the attached figures: 10 - Electronic device; 100, 102 - Substrate; 101 - Signal line; 1002, 1004, 1021 - Surface; 1006, 1023, 1041, 1081 - Side; 104 - Adhesive layer; 106 - Conductor; 1060, 1062, 1064 - Part; 108 - Conductive pad; 110 - Wavelength selective layer; 112 - Integrated circuit; 114 - Energy beam; 116 - Circuit layer; 118 - Light-emitting element; 118b - Bonding pad; 120 - Wavelength conversion layer; 122 - Color filter layer; 124 - Black matrix layer; 126 - Encapsulation layer; Dx, Dy, Dz - Direction; R1, R2, R1' - Region. Detailed Implementation

[0018] The present invention can be understood by referring to the following detailed description and the accompanying drawings. It should be noted that, for ease of understanding and to keep the drawings concise, many of the drawings in this invention only depict a portion of the electronic device, and specific components in the drawings are not drawn to scale. Furthermore, the number and size of the components in the drawings are for illustrative purposes only and are not intended to limit the scope of the invention.

[0019] Throughout this specification and the appended claims, certain terms are used to refer to specific elements. Those skilled in the art will understand that electronic device manufacturers may use different names to refer to the same elements. This document is not intended to distinguish between elements that have the same function but different names. In the following specification and claims, words such as "containing" and "comprising" are open-ended terms and should therefore be interpreted as "containing but not limited to...".

[0020] It should be understood that when an element or membrane is referred to as being "on," "set on," or "connected to" another element or membrane, it can be directly on or directly connected to that other element or membrane, or there may be an inserted element or membrane between them (in the indirect case). Conversely, when an element is referred to as being "directly on," "directly set on," or "directly connected to" another element or membrane, there may be no inserted element or membrane between them.

[0021] Electrical connections can be direct or indirect. An electrical connection between two components can be a direct contact for transmitting electrical signals, with no other components between them. An electrical connection between two components can also be a bridging connection between them to transmit electrical signals. An electrical connection can also be called a coupling.

[0022] Although the terms first, second, third… can be used to describe multiple components, the components are not limited to these terms. These terms are used only to distinguish a single component from other components in the specification. The same terms may not be used in the claims, but rather replaced by first, second, third… in the order of the elements declared in the claims. Therefore, in the following description, a first component may be a second component in the claims.

[0023] It should be understood that the technical features of several different embodiments can be replaced, reorganized, or mixed to complete other embodiments without departing from the spirit of the present invention.

[0024] The electronic device of this invention may include, but is not limited to, display devices, antenna devices, touch displays, curved displays, or free-shape displays. The electronic device may be bendable or flexible. The electronic device may include, for example, light-emitting diodes (LEDs), liquid crystals, fluorescent, phosphorescent, other suitable display media, or combinations thereof, but is not limited to these. Light-emitting diodes may include, for example, organic light-emitting diodes (OLEDs), inorganic light-emitting diodes (LEDs), mini-light-emitting diodes (mini LEDs), micro-light-emitting diodes (micro-LEDs), quantum dot LEDs (e.g., QLEDs, QDLEDs), other suitable materials, or any arrangement or combination thereof, but is not limited to these. Display devices may include, for example, video wall displays, but are not limited to these. The concepts or principles of this invention can also be applied to non-self-emissive liquid crystal displays (LCDs), but are not limited thereto.

[0025] The antenna device may be, for example, a liquid crystal antenna or other types of antennas, but is not limited thereto. The antenna device may include, for example, a splicing antenna device, but is not limited thereto. It should be noted that the electronic device may be any of the aforementioned arrangements and combinations, but is not limited thereto. Furthermore, the electronic device may be rectangular, circular, polygonal, have curved edges, or other suitable shapes. The electronic device may have peripheral systems such as a drive system, control system, light source system, and shelving system to support the display device, antenna device, or splicing device. The present invention will be described below using a display device as an example of an electronic device, but the invention is not limited thereto.

[0026] The display device may include multiple subpixels arranged side by side. Each subpixel may include, for example, a light-emitting element, a corresponding color filter layer and / or a circuit layer, or other corresponding film layers, but is not limited thereto. In one embodiment, different subpixels may emit different colors of light, such as green, red, blue, yellow, or white, but are not limited thereto; the color of the light emitted by the subpixels can be designed as needed. In another embodiment, the display device may be a monochrome display device, and all subpixels may emit a single color of light, such as white, red, or any suitable color. Furthermore, the top-view shape of the subpixels may be rectangular, parallelogram-shaped, ">", or any suitable shape. It should be noted that the electronic device may be any of the aforementioned arrangements and combinations, but is not limited thereto.

[0027] Please refer to Figure 1 The diagram shown is a schematic diagram of an electronic device according to a first embodiment of the present invention. Figure 1 The structure in it can be, for example, an electronic device 10 (or a display device). Figure 1 Draw a substrate 100 (or first substrate), a substrate 102 (or second substrate), and multiple signal lines 101 in the electronic device 10, and omit the other components. Figure 1 The configuration of signal line 101 is for illustrative purposes only and can be adjusted according to design requirements. The remaining components of electronic device 10 will be described in more detail in the following figures. Signal line 101 may be disposed on substrate 100 and between substrate 100 and substrate 102, but is not limited thereto. In some embodiments, substrate 102 may be replaced by an encapsulation layer, but is not limited thereto. In some embodiments, signal line 101 may be, for example, a data line, but is not limited thereto. For example, signal line 101 may extend to a region R1' adjacent to the edge of electronic device 10 and may be connected via wire 106 (drawn on...). Figure 2 It can be electrically connected to components such as drive elements or conductive pads, but is not limited thereto.

[0028] Figure 1 Three directions, Dx, Dy, and Dz, are indicated. Direction Dz can be perpendicular to the upper or lower surface of substrate 100 or substrate 102, while directions Dx and Dy can be parallel to the upper or lower surface of substrate 100 or substrate 102. Direction Dz can be perpendicular to directions Dx and Dy, and direction Dx can be perpendicular to direction Dy. Subsequent drawings can use directions Dx, Dy, and Dz to describe the spatial relationships of the structure.

[0029] Please refer to Figure 2 and Figure 3 , Figure 2 As shown Figure 1 An enlarged schematic diagram of a first example of a region R1 extending from the middle region R1' along the direction Dy, and Figure 3 The image shows along Figure 2 A schematic diagram of the structural cross-section along line B-B'. Figure 2 and Figure 3 The structure in the electronic device 10 (or display device) may be a part of the structure adjacent to the edge of the substrate 100, but is not limited thereto. Figure 2 and Figure 3 Only a portion of the electronic device 10 is shown as an example. In some embodiments, multiple electronic devices 10 may be interconnected to form a video wall, but this is not a limitation. In other embodiments, the electronic device 10 may not be a video wall display device but may include a single, independent display device, but this is not a limitation. The following will use... Figure 1 The electronic device 10 in the example is used for illustration.

[0030] like Figure 2 and Figure 3 As shown, the electronic device 10 may include a substrate 100, a substrate 102, an adhesive layer 104, multiple conductive lines 106, multiple conductive pads 108, and a wavelength selective layer 110, but is not limited thereto. In some embodiments, the substrate 102 and the adhesive layer 104 may be selectively disposed, but are not limited thereto. The substrate 100 may be disposed opposite to the substrate 102, and the adhesive layer 104 may be disposed between the substrate 100 and the substrate 102. The material of the substrate 100 or the substrate 102 may include glass, quartz, sapphire, polymers (such as polyimide (PI), polyethylene terephthalate (PET)) and / or other suitable materials to serve as a flexible substrate or a rigid substrate, but is not limited thereto. The substrate 100 and the substrate 102 may be made of the same or different materials. The adhesive layer 104 may include, for example, an optically clear resin (OCR), but is not limited thereto.

[0031] The substrate 100 may include a surface 1002 (or a first surface) and a surface 1004 (or a second surface) opposite to the surface 1002, wherein the surface 1002 may be closer to the substrate 102, and the surface 1004 may be farther away from the substrate 102. Furthermore, the substrate 100 may include a side surface 1006, which may be generally parallel to the direction Dz, and may be located between the surface 1002 and the surface 1004, and may connect the surface 1002 and the surface 1004. Figure 2 or Figure 3Taking a conductor 106 as an example, a portion 1060 of the conductor 106 may be disposed on surface 1004, and a portion 1062 of the conductor 106 may be disposed on side surface 1006. The conductor may be, for example, a conductive material connecting the driving element and the conductive pad, or a conductive material connecting the driving element and a circuit layer (not shown) in the display area. In some embodiments, at least a portion of the conductor is not located between substrate 100 and substrate 102; in some embodiments, a portion of the conductor is disposed on side surface 1006 of substrate 100 or on an outer surface (e.g., on surface 1004).

[0032] The conductive wire 106 can be formed on the surface 1004 and side surfaces 1006 of the substrate 100 by a printing process, but is not limited thereto. The conductive wire 106 can be cured and its conductivity improved by an energy beam 114. The material of the conductive wire 106 may include, but is not limited to, conductive adhesive. The conductive adhesive may include glue, colloid, paint, or ink containing conductive components (such as metal or carbon), but is not limited thereto. The conductive metal or carbon may include micron-sized fragments or nanoparticles of a specific type, an unspecified type, or a mixture thereof, but is not limited thereto. The metal may include silver, copper particles, or other metallic materials, but is not limited thereto. The energy beam 114 may irradiate at least a portion of the surface 1004 and / or the side surfaces 1006 of the substrate 100 on which the conductive wire 106 is provided, but is not limited thereto. In some embodiments, the conductive wire 106 may also be formed on the surface 1004 and side surfaces 1006 of the substrate 100 by a vapor deposition or sputtering process, but is not limited thereto. The term "curing" in this case refers to the solidification of liquid materials into a fixed shape after irradiation with an energy beam.

[0033] Furthermore, the energy beam 114 may include, but is not limited to, a laser or a pulsed lamp. For example, the energy beam 114 may include an ultraviolet laser (wavelength less than 400 nm), a visible laser (wavelength from 400 nm to 750 nm), or an infrared laser (wavelength greater than 750 nm), but is not limited to these. The pulsed lamp may, for example, include a pulsed xenon lamp, but is not limited to these. Figure 2 As shown, the energy beam 114 in this embodiment can be applied to the surface 1004 and side 1006 of the substrate 100, but is not limited thereto.

[0034] like Figure 2 and Figure 3 As shown, a conductive pad 108 may be disposed between substrate 100 and substrate 102. In some embodiments, the conductive pad 108 may be disposed on surface 1002 of substrate 100. For example, the conductive pad 108 may be disposed between adhesive layer 104 and substrate 100, but is not limited thereto. In some embodiments, the conductive pad 108 may contact a portion 1062 of wire 106 to achieve electrical connection, but is not limited thereto. Figure 3The conductive pad 108 may have a side surface 1081 that is generally parallel to the direction Dz. In some embodiments, a portion 1062 of the wire 106 may extend from the side surface 1006 of the substrate 100 to the side surface 1081 of the conductive pad 108, such that the portion 1062 of the wire 106 can contact at least a portion of the side surface 1081 of the conductive pad 108 to achieve an electrical connection. In some embodiments, a portion 1062 of the wire 106 may extend from the side surface 1006 of the substrate 100 to the side surface 1081 of the conductive pad 108 and at least a portion of the side surface 1041 of the adhesive layer 104, wherein the side surface 1041 of the adhesive layer 104 is generally parallel to the direction Dz. In some embodiments, a portion 1062 of the conductor 106 may extend from a side surface 1006 of the substrate 100 to a side surface 1081 of the conductive pad 108, a side surface 1041 of the adhesive layer 104, and at least a portion of a side surface 1023 of the substrate 102, wherein the side surface 1023 of the substrate 102 may be substantially parallel to the direction Dz. In some embodiments, the side surface 1006 of the substrate 100, the side surface 1081 of the conductive pad 108, the side surface 1041 of the adhesive layer 104, and the side surface 1023 of the substrate 102 may be aligned with each other, but are not limited thereto.

[0035] For example, the conductive pad 108 can be electrically connected to the light-emitting element in the display area, allowing the wire 106 to be electrically connected to the light-emitting element through the conductive pad 108, but this is not a limitation. In addition, the conductive pad 108 can also be electrically connected to other signal lines or other components in the electronic device 10 according to design requirements.

[0036] In some embodiments, the conductive pad 108 may comprise a metallic conductive material, a transparent conductive material, or a combination thereof. In some embodiments, the aforementioned metallic conductive material may comprise copper (Cu), aluminum (Al), molybdenum (Mo), silver (Ag), tin (Sn), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), copper alloys, aluminum alloys, molybdenum alloys, silver alloys, tin alloys, tungsten alloys, gold alloys, chromium alloys, nickel alloys, platinum alloys, other suitable metallic materials, or combinations thereof, but is not limited thereto. In some embodiments, the aforementioned transparent conductive material may comprise a transparent conductive oxide (TCO). For example, transparent conductive oxides may include indium tin oxide (ITO), tin oxide (SnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), antimony tin oxide (ATO), antimony zinc oxide (AZO), other suitable transparent conductive materials, or combinations thereof, but are not limited thereto.

[0037] Furthermore, for example, wire 106 (e.g., disposed on a portion 1060 of surface 1004) may be electrically connected to an integrated circuit 112. Thus, wire 106 can transmit signals from integrated circuit 112 to components within electronic device 10 via conductive pad 108. Integrated circuit 112 may be disposed on surface 1004 of substrate 100. Integrated circuit 112 may include at least one thin-film transistor for driving components within electronic device 10, but is not limited thereto. In some embodiments, integrated circuit 112 may be disposed directly on substrate 100 or on a flexible circuit board (not shown), but is not limited thereto. In some embodiments, integrated circuit 112 may be electrically connected to wire 106 via a flexible circuit board, but is not limited thereto.

[0038] like Figure 3As shown, a wavelength selectivity layer 110 may be disposed between a conductor 106 (such as a portion 1060 of conductor 106) and a substrate 100 (such as surface 1004 of substrate 100). The wavelength selectivity layer 110 can be used to shield the energy beam 114 to reduce the degradation of components or materials within the electronic device 10 due to the energy beam 114, thereby improving the reliability or display quality of the electronic device 10. For example, the wavelength selectivity layer 110 used in the electronic device 10 can shield the energy beam 114. The shielding effect of the wavelength selectivity layer 110 is defined herein as suppressing the transmittance of the energy beam 114 to less than 10%. In this context, "transmittance" refers to the percentage obtained by dividing the integral value of the spectrum of the energy beam (e.g., a laser) after passing through the wavelength selectivity layer by the integral value of the spectrum before passing through the wavelength selectivity layer.

[0039] For example, the material of wavelength selective layer 110 may include silver, gold, copper, aluminum, chromium, platinum, other suitable metals, alloys or metal oxides described above, or combinations thereof, but is not limited thereto. Furthermore, wavelength selective layer 110 may comprise a single film layer or multiple film layers, but is not limited thereto.

[0040] In some embodiments, the wavelength selectivity layer 110 may be a metallic material layer, which may include silver, gold, copper, aluminum, chromium, platinum, or alloys or metal oxides of the above, or multilayer films containing the above materials, but is not limited thereto. Different types of metals can be used to reflect energy beams 114 in different wavelength ranges. For example, a metallic material layer containing aluminum may have high reflectivity for wavelengths from ultraviolet to infrared, while a metallic material layer containing gold may be suitable for reflecting infrared wavelengths.

[0041] In some embodiments, the wavelength selection layer 110 may employ an infrared absorber, for example, in the infrared band. For instance, the infrared absorber may include, but is not limited to, polycyclic aromatic hydrocarbons, long-chain hydrocarbons containing conjugated double bonds, quantum dots with special core-shell structures or materials, or multilayer films.

[0042] In some embodiments, the wavelength selective layer 110, taking the infrared band as an example, may be a multilayer film. For example, the multilayer film may include a multilayer stacked structure of metal thin films, metal oxide thin films, or complex metal oxide films, but is not limited thereto. The multilayer film may include at least two different refractive indices. By matching the refractive indices of the different film layers, the direction of travel of the energy beam 114 when it enters the film layer can be changed, or it can be totally reflected before entering the film layer, thereby achieving the purpose of shielding the energy beam 114. In addition, the wavelength selective layer described above can also be used to shield energy beams with other wavelength bands.

[0043] In some embodiments, the functions and / or materials of the wavelength selection layer described above can be used independently as needed, or in any combination of two or all three.

[0044] Please refer to Figure 4 and Figure 5 , Figure 4 As shown Figure 1 An enlarged schematic diagram of a second example of region R1 extending from the middle region R1' along the direction Dy, and Figure 5 The image shows along Figure 4 A cross-sectional view of the structure along line C-C' is shown. The difference between the second and first examples is that the conductor 106 may further include a portion 1064, which may be disposed between the substrate 100 and the substrate 102, but is not limited thereto. In some embodiments, the portion 1064 of the conductor 106 may be disposed between the conductive pad 108 and the adhesive layer 104, but is not limited thereto. In some embodiments, the conductive pad 108 may contact the portion 1064 of the conductor 106 to achieve an electrical connection, but is not limited thereto. In other words, a portion 1064 of the wire 106 may extend from between the substrate 100 and the substrate 102 of the electronic device 10 toward the side 1006 of the substrate 100, and a portion 1062 of the wire 106 may continue to extend along the side 1006 toward the surface 1004, and a portion 1060 of the wire 106 may extend on the surface 1004, and an integrated circuit 112 may be disposed on the portion 1060 of the wire 106, but is not limited thereto.

[0045] Please refer to Figure 6 As shown Figure 1 A schematic diagram of a cross section A-A' in the central region R2. Figure 6 The structure in can be, for example, Figure 1 The structure of a region R2 within the display area of ​​the electronic device 10 (or display device) may be, for example, a cross-sectional structure corresponding to a light-emitting element, but is not limited thereto. Figure 6The electronic device 10 may further include a circuit layer 116, at least one light-emitting element 118, at least one wavelength conversion layer 120, at least one color filter layer 122, and a black matrix layer 124, but is not limited thereto. The circuit layer 116 may be disposed on the surface 1002 of the substrate 100. The circuit layer 116 may include thin-film transistors, capacitors, etc. Figure 1 The circuit layer 116 may include components such as signal line 101, but is not limited thereto. In some embodiments, the circuit layer 116 may be connected to... Figures 2 to 5 At least a portion of the conductive pads 108 are electrically connected, or the signal lines 101 in the circuit layer 116 may be electrically connected to at least a portion of the conductive pads 108, but this is not a limitation. The light-emitting element 118 may be disposed on the surface 1002 of the substrate 100. In one embodiment, a circuit layer 116 may be disposed between the light-emitting element 118 and the substrate 100. In this embodiment, the light-emitting element 118 may be disposed between the substrate 100 and the substrate 102, and the light-emitting element 118 may be covered by an adhesive layer 104, but this is not a limitation.

[0046] The light-emitting element 118 can be used to emit light, for example, it can emit blue light or ultraviolet light, but is not limited thereto. The light-emitting element 118 may include, but is not limited thereto, a light-emitting diode. For example, the light-emitting element 118 may include a micro LED, a sub-millimeter LED, a quantum dot LED, a nanowire LED, or a bar-type LED, but is not limited thereto.

[0047] The light-emitting element 118 may be electrically connected, for example, to a thin-film transistor or signal line 101 in the circuit layer 116. For instance, the light-emitting element 118 may include at least one bonding pad 118b, and the bonding pad 118b may be bonded to and electrically connected to a thin-film transistor or signal line 101 in the circuit layer 116, but is not limited thereto. The bonding pad 118b of the light-emitting element 118 and the other bonding pad in the circuit layer 116 may include metal or other suitable conductive materials, but are not limited thereto. Furthermore, in Figure 3 or Figure 5In this circuit, the wire 106 can be disposed on the surface 1004 of the substrate 100. The wire 106 can be electrically connected to the circuit layer 116 through the conductive pad 108, so that the integrated circuit 112 can control the light-emitting element 118 through the wire 106. In other words, the wire 106 can be electrically connected to the light-emitting element 118 and / or can be used to drive the light-emitting element 118, but is not limited thereto. In addition, in some embodiments, the material of the adhesive layer 104 can also be filled into the gaps between the bonding pads 118b to reduce the influence of moisture or oxygen on the light-emitting element 118, or to enhance the adhesion between the light-emitting element 118 and the circuit layer 116. The gaps between the bonding pads 118b can also be filled with other materials, such as adhesives or photoresist polymers, including acrylic resin, epoxy resin, phenolic resin, etc., but are not limited thereto.

[0048] Wavelength conversion layer 120, color filter layer 122, or black matrix layer 124 may be selectively disposed on the light-emitting element 118, or selectively disposed on a surface 1021 of substrate 102, or selectively disposed between substrate 102 and adhesive layer 104, but are not limited thereto. In some embodiments, a light scattering layer (not shown) may be disposed on the light-emitting element 118, but is not limited thereto. Wavelength conversion layer 120 can be used to convert the light emitted by light-emitting element 118 (e.g., convert the wavelength of the light). For example, wavelength conversion layer 120 can be used to convert the light emitted by light-emitting element 118 into red light, green light, or blue light, but is not limited thereto. For example, wavelength conversion layer 120 may include quantum dot material, phosphorescent material, fluorescent material, or a combination of the above materials, but is not limited thereto.

[0049] The color filter layer 122 may be disposed on the wavelength conversion layer 120 or between the substrate 102 and the wavelength conversion layer 120, but is not limited thereto. The color filter layer 122 may include red, green, or blue organic materials, but is not limited thereto. For example, in a red sub-pixel, the wavelength conversion layer 120 may include a quantum dot material capable of converting the light emitted by the light-emitting element 118 into red light, and the color filter layer 122 may be a red color filter layer, but is not limited thereto.

[0050] The black matrix layer 124 may include, but is not limited to, a light-shielding material, such as a black organic material or a black photoresist. Figure 6 The wavelength conversion layer 120 and the color filter layer 122 can be disposed between adjacent black matrix layers 124. For example, the black matrix layer 124 can be made of a material that facilitates the coating of quantum dot materials in the wavelength conversion layer 120. Furthermore, the black matrix layer 124 can have a single-layer or multi-layer structure. In a multi-layer structure, different film layers can have the same or different materials. On the other hand, the black matrix layer 124 can also be disposed between the wavelength conversion layers 120 (or color filter layers 122) of adjacent sub-pixels. Figure 6 (Not shown) to avoid interference between the rays of adjacent sub-pixels.

[0051] In some embodiments, the wavelength selection layer 110 may be disposed between the conductor 106 and the wavelength conversion layer 120, for example, between the conductor 106 and the substrate 100, but is not limited thereto. Since the conductor 106 can be solidified by the energy beam 114, and the material in the wavelength conversion layer 120 (such as quantum dots) is easily affected by the energy beam 114, the wavelength selection layer 110 can be disposed between the conductor 106 and the wavelength conversion layer 120 to shield the material in the wavelength conversion layer 120 from the energy beam 114, thereby improving the reliability or display quality of the electronic device 10. In some embodiments, the wavelength selection layer 110 may be disposed between the energy beam 114 and the wavelength conversion layer 120, and the wavelength selection layer 110 may be patterned to have multiple patterns, each pattern corresponding to a region of the wavelength conversion layer 120, that is, the wavelength selection layer 110 may correspond to a light-emitting unit 118.

[0052] Other embodiments of the present invention will be described in detail below. For the sake of simplicity, the same reference numerals will be used to refer to the same elements. In order to highlight the differences between the embodiments, the differences between the different embodiments will be described in detail below, and repeated technical features will not be repeated.

[0053] Please refer to Figure 7 The diagram shown is a cross-sectional schematic of an electronic device according to a second embodiment of the present invention. The second embodiment and the first embodiment (as shown in the diagram) Figure 6 The difference is that the wavelength selection layer 110 in the second embodiment can be disposed on the surface 1002 of the substrate 100, or between the light-emitting element 118 and the substrate 100, but is not limited thereto.

[0054] Please refer to Figure 8 The diagram shown is a cross-sectional schematic of an electronic device according to a third embodiment of the present invention. The third embodiment and the first embodiment (as shown in the diagram) Figure 6The difference lies in that the wavelength selection layer 110 in the third embodiment can be disposed between the light-emitting element 118 and the substrate 102, or between the adhesive layer 104 and the wavelength conversion layer 120, but is not limited thereto. The wavelength selection layer 110, the wavelength conversion layer 120, the color filter layer 122, and the black matrix layer 124 can be disposed on the substrate 102 and can be bonded to the substrate 100 through the adhesive layer 104, but is not limited thereto. Since the wavelength selection layer 110 in this embodiment is disposed on the side where the light-emitting element 118 emits light, the material of the wavelength selection layer 110 can be selected to be a material that will not block the light emitted by the light-emitting element 118. For example, the wavelength range of light that the wavelength selection layer 110 can block does not include the wavelength of the light emitted by the light-emitting element 118.

[0055] In some embodiments, in direction Dz, the wavelength conversion layer 120 may at least cover the light-emitting region in the upper surface of the light-emitting element 118, the area of ​​which may be slightly smaller than the area of ​​the upper surface of the light-emitting element 118, but is not limited thereto. In some embodiments, in direction Dz, the wavelength conversion layer 120 may at least cover the upper surface of the light-emitting element 118. For example... Figure 9 As shown. The above-described embodiment of the wavelength conversion layer 120 covering the light-emitting element 118 can also be applied to other embodiments of the present invention, and therefore will not be described in detail.

[0056] In some embodiments, the coverage area of ​​the color filter layer 122 in direction Dz may be equal to the area of ​​the upper surface of the wavelength conversion layer 120. In some embodiments, the coverage area of ​​the color filter layer 122 may be greater than the area of ​​the upper surface of the wavelength conversion layer 120.

[0057] Please refer to Figure 9 The diagram shown is a cross-sectional schematic of an electronic device according to a fourth embodiment of the present invention. The fourth embodiment and the first embodiment (as shown in the diagram) Figure 6The difference lies in that the electronic device 10 of the fourth embodiment may include an encapsulation layer 126 and may not include the substrate 102 and adhesive layer 104 of the first embodiment, but is not limited thereto. The encapsulation layer 126 may be disposed on the light-emitting element 118 and may cover the color filter layer 122 and the black matrix layer 124. The color filter layer 122 may be disposed on the wavelength conversion layer 120, and the color filter layer 122 and the wavelength conversion layer 120 may be disposed between the encapsulation layer 126 and the light-emitting element 118. The black matrix layer 124 may be disposed on the substrate 100 and disposed around the light-emitting element 118, the wavelength conversion layer 120 and / or the color filter layer 122. The material of the encapsulation layer 126 may fill the gaps between the black matrix layer 124 and the light-emitting element 118 or the gaps between the bonding pads 118b to reduce the influence of moisture or oxygen on the light-emitting element 118. The encapsulation layer 126 may include a single-layer structure or a multi-layer structure, but is not limited thereto. The encapsulation layer 126 may include, but is not limited to, organic insulating materials, inorganic insulating materials, or combinations thereof.

[0058] Please refer to Figure 10 The diagram shown is a cross-sectional view of an electronic device according to a fifth embodiment of the present invention. The fifth embodiment and the fourth embodiment (as shown) Figure 9 The difference is that the wavelength selection layer 110 in the fifth embodiment can be disposed on the surface 1002 of the substrate 100, or between the light-emitting element 118 and the substrate 100, but is not limited thereto.

[0059] Please refer to Figure 11 The diagram shown is a cross-sectional view of an electronic device according to a sixth embodiment of the present invention. The sixth embodiment and the fourth embodiment (as shown) Figure 9 The difference lies in that, in the sixth embodiment, the wavelength selection layer 110 can be disposed on the light-emitting element 118, or it can be disposed between the light-emitting element 118 and the wavelength conversion layer 120, but it is not limited thereto. In this embodiment, the wavelength selection layer 110 can be disposed between adjacent black matrix layers 124, but it is not limited thereto. Since the wavelength selection layer 110 in this embodiment is disposed on the side of the light-emitting element 118 that emits light, the material of the wavelength selection layer 110 can be selected to be a material that will not block the light emitted by the light-emitting element 118.

[0060] In some embodiments (such as) Figure 11 In the direction Dz, the wavelength conversion layer 120 may cover the upper surface of the light-emitting element 118, and the wavelength conversion layer 120 may also be disposed in the gap between the side of the light-emitting element and the black matrix layer 124. In some embodiments, the wavelength conversion layer 120 may selectively fill the gap between the bonding pads 118b. The gap between the bonding pads 118b may also be filled with other materials, such as adhesives or photoresist polymers, including acrylic resin, epoxy resin, phenolic resin, etc., but not limited thereto.

[0061] In some embodiments, the second embodiment ( Figure 7 ) to the sixth embodiment ( Figure 11 The electronic device may include a structure of the first or second example of the region R1 adjacent to the edge of the electronic device 10 in the first embodiment.

[0062] In summary, in the electronic device of the present invention, a wavelength selective layer can be disposed between the conductor and the wavelength conversion layer. When the conductor can be formed by curing with an energy beam, by disposing of the wavelength selective layer between the conductor and the wavelength conversion layer, the energy beam can be shielded by the wavelength selective layer to protect the material in the wavelength conversion layer or reduce the degradation of components or materials in the electronic device due to the influence of the energy beam, thereby improving the reliability or display quality of the electronic device.

[0063] The above description is merely an embodiment of the present invention and is not intended to limit the invention. For those skilled in the art, the present invention can have various modifications and variations, and the different features between the embodiments can be arbitrarily arranged and combined as long as they do not conflict with or violate the spirit of the invention, depending on design requirements. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. An electronic device, characterized in that, include: A first substrate, the first substrate including a first surface, a second surface and a side surface, the second surface being opposite to the first surface, and the side surface being connected to the first surface and the second surface; A diode element is disposed on the first surface; A wire electrically connected to the diode element, wherein the wire has a first portion disposed on the side surface of the first substrate; An adhesive layer is disposed on the diode element and the first surface, wherein the first portion of the wire is also disposed on one side surface of the adhesive layer; as well as A second substrate, wherein the adhesive layer is disposed between the second substrate and the first substrate, and the first portion of the conductor is in contact with one side of the second substrate.

2. The electronic device as claimed in claim 1, characterized in that, The side of the adhesive layer is flush with the side of the first substrate.

3. The electronic device as claimed in claim 1, characterized in that, The first portion of the conductor contacts the side surface of the adhesive layer.

4. The electronic device as claimed in claim 1, characterized in that, The first portion of the conductor contacts the side surface of the first substrate.

5. The electronic device as claimed in claim 1, characterized in that, It also includes a conductive pad disposed on the first surface, one side of the conductive pad being flush with the side of the first substrate.

6. The electronic device as claimed in claim 5, characterized in that, The first portion of the wire contacts the side of the conductive pad.

7. The electronic device as claimed in claim 1, characterized in that, It also includes a wavelength conversion layer, wherein the adhesive layer is disposed between the diode element and the wavelength conversion layer.

8. An electronic device, characterized in that, include: A first substrate, the first substrate including a first surface, a second surface and a side surface, the second surface being opposite to the first surface, and the side surface being connected to the first surface and the second surface; Multiple diode elements are disposed on the first surface; Multiple wires are electrically connected to the multiple diode elements, wherein each of the multiple wires has a first portion, and the multiple first portions are disposed on the side surface of the first substrate and arranged at intervals. An adhesive layer is disposed on the plurality of diode elements and the first surface, wherein the plurality of first portions of the plurality of wires are also disposed on one side surface of the adhesive layer; as well as A second substrate, wherein the adhesive layer is disposed between the second substrate and the first substrate, and the plurality of first portions of the plurality of wires are in contact with one side of the second substrate.

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