Radio frequency power cell circuit and radio frequency power amplifier

Abstract

The application provides a radio frequency power unit circuit and a radio frequency power amplifier.The radio frequency power unit circuit comprises: a pre-distortion processing unit, which is coupled between a radio frequency input signal and the common-source common-gate amplification unit, is adapted to receive the radio frequency input signal, and performs pre-distortion processing on the radio frequency input signal; and a common-source common-gate amplification unit, which is coupled with the output end of the pre-distortion unit and is adapted to amplify the input signal after pre-distortion processing.The radio frequency power unit circuit in the embodiment of the application can increase the linearity of the radio frequency power amplifier and improve the performance of the radio frequency power amplifier.

Description

Technical Field

[0001] This invention relates to the field of electronic circuit technology, and in particular to a radio frequency power unit circuit and a radio frequency power amplifier. Background Technology

[0002] Radio frequency transceivers are widely used in many fields such as vehicle monitoring, remote control, telemetry, small wireless networks, wireless meter reading, access control systems, community paging, industrial data acquisition systems, wireless tags, small wireless data terminals, security and fire protection systems, wireless remote control systems, biosignal acquisition, hydrological and meteorological monitoring, data communication, digital audio and digital image transmission.

[0003] In radio frequency terminals, taking radio frequency transceivers as an example, the radio frequency power amplifier is an electronic circuit that takes into account factors such as output power, excitation frequency, power consumption, distortion, efficiency, size, and weight.

[0004] However, the performance of existing RF power amplifiers still needs improvement. Summary of the Invention

[0005] The problem solved by this invention is to provide an RF power unit circuit to improve the performance of an RF power amplifier.

[0006] To address the above problems, the present invention provides a radio frequency power unit circuit, the radio frequency power unit circuit comprising:

[0007] A predistortion processing unit is coupled between the radio frequency input signal and the common source cascode amplifier unit, and is adapted to receive the radio frequency input signal and perform predistortion processing on the radio frequency input signal;

[0008] The common-source cascode amplifier unit is coupled to the output terminal of the predistortion unit and is adapted to amplify the input signal after predistortion processing.

[0009] Optionally, the pre-distortion processing unit includes:

[0010] The first bias module has an input terminal adapted to receive a bias control signal and an output terminal coupled to a capacitive coupling module, adapted to provide a bias voltage to the capacitive coupling module based on the bias control signal.

[0011] The capacitive coupling module has an input terminal, a bias voltage input terminal, and an output terminal, and is suitable for pre-distorting the radio frequency input signal.

[0012] Optionally, the first bias module includes a first transistor;

[0013] The gate terminal of the first transistor is adapted to receive the bias control signal, the source terminal of the first transistor is coupled to the capacitive coupling module, and the drain terminal of the first transistor is coupled to a preset power supply voltage.

[0014] Optionally, the first bias module further includes at least one of the following:

[0015] The voltage divider submodule is coupled to the gate terminal of the first transistor and is adapted to perform voltage divider processing on the bias control signal and then input it to the gate terminal of the first transistor.

[0016] A filtering submodule, coupled to the gate terminal of the first transistor, is adapted to filter out AC signals in the bias control signal;

[0017] A load submodule, coupled between the power supply voltage and the drain terminal of the first transistor, is adapted to provide a load for the operation of the first transistor.

[0018] Optionally, the voltage divider submodule includes a first resistor;

[0019] The first end of the first resistor is adapted to receive the first bias control signal, and the second end of the first resistor is coupled to the gate terminal of the first transistor.

[0020] Optionally, the filtering submodule includes a first capacitor;

[0021] The first terminal of the first capacitor is coupled to the gate terminal of the first transistor, and the second terminal of the first capacitor is grounded.

[0022] Optionally, the load submodule includes a second resistor;

[0023] The first end of the second resistor is used to receive the power supply voltage, and the second end of the second resistor is coupled to the drain of the first transistor.

[0024] Optionally, the capacitive coupling module includes a second capacitor and a third capacitor;

[0025] The first terminal of the second capacitor is used to receive the radio frequency input signal, the second terminal of the second capacitor is coupled to the first terminal of the third capacitor and serves as the bias voltage input terminal of the capacitive coupling module, and the second terminal of the third capacitor serves as the output terminal of the capacitive coupling module.

[0026] Optionally, the common-source cascode amplifier unit includes a second transistor and a third transistor;

[0027] The gate terminal of the second transistor serves as the input terminal of the common-source common-gate amplifier unit, the source terminal of the second transistor is coupled to the source terminal of the third transistor, and the drain terminal of the second transistor is coupled to the source terminal of the third transistor.

[0028] The gate terminal of the third transistor is adapted to receive a preset second bias control signal, and the drain terminal of the third transistor serves as the output terminal of the common-source common-gate amplifier unit.

[0029] Optionally, the common-source cascode amplifier unit further includes at least one of the following:

[0030] The first clamping module is coupled to the gate terminal of the second transistor and is adapted to clamp the voltage signal input to the gate terminal of the second transistor;

[0031] The second clamping module is coupled to the gate terminal of the third transistor and is adapted to clamp the voltage signal input to the gate terminal of the third transistor before inputting it to the gate terminal of the third transistor.

[0032] The second filtering module is coupled to the gate terminal of the third transistor and is adapted to perform AC signal isolation processing on the bias control signal input to the gate terminal of the third transistor before inputting it to the gate terminal of the third transistor.

[0033] A voltage divider module, coupled to the gate terminal of the third transistor, is adapted to perform voltage divider processing on the second bias control signal and then input it to the gate terminal of the third transistor.

[0034] An output impedance matching module is coupled between the drain of the second transistor and the drain of the third transistor, and is adapted to perform output impedance matching on the amplified input signal output from the source of the third transistor.

[0035] Optionally, the first clamping module includes a third resistor, a first diode, a second diode, a third diode, and a fourth diode;

[0036] The first end of the third resistor is coupled to the gate of the second transistor, the second end of the third resistor is coupled to the cathode of the first diode, the anode of the first diode is coupled to the cathode of the second diode, the anode of the second diode is coupled to the anode of the third diode, the cathode of the third diode is coupled to the anode of the fourth diode, and the cathode of the fourth diode is grounded.

[0037] Optionally, the second clamping module includes a fourth resistor, a fifth diode, a sixth diode, a seventh diode, and an eighth diode;

[0038] The first end of the fourth resistor is coupled to the gate of the third transistor, the second end of the fourth resistor is coupled to the negative terminal of the fifth diode, the positive terminal of the fifth diode is coupled to the negative terminal of the sixth diode, the positive terminal of the sixth diode is coupled to the positive terminal of the seventh diode, the negative terminal of the seventh diode is coupled to the positive terminal of the eighth diode, and the negative terminal of the eighth diode is grounded.

[0039] Optionally, the second filtering module includes a fifth resistor, a fourth capacitor, a fifth capacitor, a sixth capacitor, and a seventh capacitor;

[0040] The first end of the fifth resistor is grounded, and the second end of the fifth resistor is coupled to the first end of the fourth capacitor, the first end of the fifth capacitor, the first end of the sixth capacitor, and the first end of the seventh capacitor, respectively. The second ends of the fifth resistor, the fourth capacitor, the fifth capacitor, the sixth capacitor, and the seventh capacitor are all coupled to the gate end of the third transistor.

[0041] Optionally, the voltage divider module includes a sixth resistor;

[0042] The first end of the sixth resistor is used to receive the second bias control signal, and the second end of the sixth resistor is coupled to the gate terminal of the third transistor.

[0043] Optionally, the output impedance matching module includes an eighth capacitor and a ninth capacitor;

[0044] The first terminal of the eighth capacitor and the first terminal of the ninth capacitor are both coupled to the drain terminal of the second transistor, and the second terminal of the eighth capacitor and the second terminal of the ninth capacitor are both coupled to the drain terminal of the first transistor.

[0045] Accordingly, embodiments of the present invention also provide a radio frequency power amplifier, the radio frequency power amplifier including the radio frequency power unit circuit as described in any of the preceding claims.

[0046] Compared with the prior art, the technical solution of the present invention has the following advantages:

[0047] The radio frequency power unit circuit in this embodiment includes: a predistortion processing unit coupled between the radio frequency input signal and the common source cascode amplifier unit, adapted to receive the radio frequency input signal and perform predistortion processing on the radio frequency input signal; and a common source cascode amplifier unit coupled to the output terminal of the predistortion unit, adapted to amplify the predistorted input signal.

[0048] The RF power unit circuit in this embodiment of the invention uses a predistortion processing unit to predistort the RF input signal in order to compensate for the nonlinear distortion caused by the common source cascode amplifier unit directly amplifying the RF input signal, thereby increasing the linearity of the RF power amplifier and improving its performance. Attached Figure Description

[0049] Figure 1 This is a schematic diagram of the frame structure of a radio frequency power unit circuit in an embodiment of the present invention;

[0050] Figure 2 This is a circuit diagram of a predistortion unit in an embodiment of the present invention;

[0051] Figure 3 This is a circuit diagram of a common-source cascode amplifier unit in an embodiment of the present invention;

[0052] Figure 4 This is an equivalent circuit diagram of a common-source cascode amplifier unit in an embodiment of the present invention. Detailed Implementation

[0053] As can be seen from the background technology, the fabrication of existing radio frequency power amplifiers still needs improvement.

[0054] Based on their quiescent operating point, traditional power amplifiers can be classified into four categories: A, B, C, D, and AB. The difference between these four categories lies in their conduction angle. Class A power amplifiers are fully conductive, exhibiting good linearity but with very low efficiency, reaching a maximum of 50%. Class B power amplifiers have a conduction efficiency of half, with a maximum efficiency of 78.5%, representing an improvement over Class A. Class AB power amplifiers combine the high linearity of Class A and the high efficiency of Class B, thus meeting the performance requirements for both linearity and efficiency.

[0055] However, operating the power stage of the RF power amplifier in the manner of a Class AB power amplifier effectively improves efficiency compared to a Class A power amplifier, but it is prone to nonlinear distortion.

[0056] To address the aforementioned problems, the present invention provides a radio frequency power unit circuit, comprising: a predistortion processing unit coupled between a radio frequency input signal and a common source cascode amplifier unit, adapted to receive the radio frequency input signal and perform predistortion processing on the radio frequency input signal; and the common source cascode amplifier unit coupled to the output terminal of the predistortion unit, adapted to amplify the predistorted input signal.

[0057] The RF power unit circuit in this embodiment of the invention uses a predistortion processing unit to predistort the RF input signal to compensate for the nonlinear distortion caused by the common source cascode amplifier unit directly amplifying the RF input signal. This increases the linearity of the RF power amplifier, improves the performance of the RF power unit circuit, and further improves the performance of the RF power amplifier.

[0058] To make the above-mentioned objectives, features and beneficial effects of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0059] Figure 1 A schematic diagram of the framework structure of a radio frequency power unit circuit according to an embodiment of the present invention is shown.

[0060] Please see Figure 1 An embodiment of the present invention provides a radio frequency power unit circuit including a predistortion processing unit 10 and a common-source cascode amplifier unit 20. The predistortion processing unit 10 and the common-source cascode amplifier unit 20 are coupled to each other.

[0061] The predistortion processing unit 10 can receive the radio frequency (RF) input signal and perform predistortion processing on the RF input signal. Then, the cascode amplifier unit 20 receives the predistorted RF input signal sent by the predistortion processing unit 20 and amplifies the predistorted input signal. By using the predistortion processing unit 20 to perform predistortion processing on the RF input signal, the nonlinear distortion caused by the cascode amplifier unit directly amplifying the RF input signal can be compensated, thereby increasing the linearity of the RF power unit circuit, improving the performance of the RF power unit circuit, and ultimately improving the performance of the RF power amplifier.

[0062] Figure 2 A circuit diagram of a predistortion processing unit in an embodiment of the present invention is shown.

[0063] Please see Figure 2 The predistortion processing unit 10 has an input terminal and an output terminal. The input terminal of the predistortion processing unit 10 is used to receive the radio frequency input signal Vin, and the output terminal of the predistortion processing unit 10 is used to output the predistorted radio frequency output signal Vout1, and is coupled to the input terminal of the common source cascode amplifier unit 20.

[0064] In this embodiment, the pre-distortion processing unit 10 includes a first bias module 101 and a capacitive coupling module 102 that are coupled to each other.

[0065] The first bias module 101 has an input terminal and an output terminal. The input terminal of the first bias module 101 is used to receive a first bias control signal Vg1, and the output terminal of the first bias module 101 is coupled to the capacitive coupling module 102. Under the control of the first bias control signal Vg1, the first bias module 101 can generate a bias voltage Vs and provide it to the capacitive coupling module 102 to provide a stable static operating point for the capacitive coupling module 102.

[0066] In this embodiment, the first bias module 101 includes a first transistor M1. The gate terminal of the first transistor M1 is adapted to receive the first bias control signal Vg1, the source terminal of the first transistor M1 is coupled to the capacitive coupling module 102, and the drain terminal of the first transistor M1 is coupled to a preset power supply voltage VDD.

[0067] In this embodiment, the first bias module 101 further includes the voltage divider submodule 1011, the filter submodule 1012, and the load submodule 1013.

[0068] The first terminal of the voltage divider submodule 1011 is used to receive the first bias control signal Vg1, and the second terminal of the voltage divider submodule 1011 is coupled to the gate terminal of the first transistor M1. The voltage divider submodule 1011 can perform voltage division processing on the first bias control signal Vg1 and then input it to the gate terminal of the first transistor M1.

[0069] Specifically, the voltage divider submodule 1011 includes a first resistor R1. The first terminal of the first resistor R1 is used to receive the first bias control signal Vg1, and the second terminal of the first resistor R1 is coupled to the gate terminal of the first transistor M1.

[0070] The first terminal of the filtering submodule 1012 is coupled to the gate terminal of the first transistor M1, and the second terminal of the filtering submodule 1012 is grounded. The filtering submodule 1012 can filter out the AC signal in the first bias control signal Vg1 and input it to the gate terminal of the first transistor M1.

[0071] Specifically, the filtering submodule 1012 includes a first capacitor C1. The first terminal of the first capacitor C1 is coupled to the gate terminal of the first transistor M1, and the second terminal of the first capacitor C1 is grounded.

[0072] The first terminal of the load submodule 1013 is used to receive the power supply voltage VDD, and the second terminal of the load submodule 1013 is coupled to the drain terminal of the first transistor M1. The load submodule 1013 can provide a load for the operation of the first transistor M1.

[0073] Specifically, the load submodule 1013 includes a second resistor R2. The first terminal of the second resistor R2 is used to receive the power supply voltage VDD, and the second terminal of the second resistor R2 is coupled to the drain terminal of the first transistor M1.

[0074] The capacitive coupling module 102 includes an input terminal, a bias voltage input terminal, and an output terminal. The input terminal of the capacitive coupling module 102 serves as the input terminal of the pre-disruption RF power unit circuit or is coupled to the input terminal of the pre-disruption RF power unit circuit, for receiving the RF input signal Vin. The output terminal of the capacitive coupling module 102 serves as the output terminal of the pre-disruption RF power unit circuit or is coupled to the output terminal of the pre-disruption RF power unit circuit. The bias voltage input terminal of the capacitive coupling module 102 is coupled to the output terminal of the first bias module 101, for receiving the bias voltage Vs output by the first bias module 101. The capacitive coupling module 102 can pre-distort the RF input signal Vin to generate a pre-distorted RF input signal Vout1, thereby increasing the linearity of the subsequent cascode amplifier unit.

[0075] In this embodiment, the capacitive coupling module 102 includes a second capacitor C2 and a third capacitor C3. The first terminal of the second capacitor C2 serves as the input terminal of the capacitive coupling module 102 or is coupled to the input terminal of the capacitive coupling module 102. The first terminal of the second capacitor C2 is coupled to the first terminal of the third capacitor C3 and serves as the bias voltage input terminal of the capacitive coupling module 102 or is coupled to the bias voltage input terminal of the capacitive coupling module 102. The second terminal of the third capacitor C3 serves as the output terminal of the capacitive coupling module 102 or is coupled to the output terminal of the capacitive coupling module 102.

[0076] The aforementioned predistortion unit 10 can be equivalently constructed by a variable resistor Rs and a variable capacitor Cs connected in parallel. The output signal power of the predistortion unit can be expressed as:

[0077]

[0078] Among them, S 21 Z0 represents the output signal power of the predistortion circuit, Z0 represents the characteristic impedance of the predistortion circuit, and jω represents the angular frequency.

[0079] As can be seen from the above formula (1), the output signal power S of the predistortion unit 10 is... 21 The linearity is proportional to the input signal power. Therefore, the predistortion unit 10 can increase the linearity of the RF power unit circuit in the embodiment of the present invention, and thus increase the linearity of the RF power amplifier in the embodiment of the present invention.

[0080] Figure 3 A circuit diagram of a common-source cascode amplifier unit according to an embodiment of the present invention is shown.

[0081] Please see Figure 3 In this embodiment, the common-source cascode amplifier unit 20 has an input terminal and an output terminal. The input terminal of the common-source cascode amplifier unit 20 is coupled to the output terminal of the pre-distortion circuit 101, and the output terminal of the common-source cascode amplifier unit 20 serves as the output terminal of the RF power unit circuit or is coupled to the output terminal of the RF power unit circuit. The common-source cascode amplifier unit 20 can receive and amplify the pre-distorted RF input signal.

[0082] In this embodiment, the common-source cascode amplifier unit 20 includes a second transistor M2 and a third transistor M3. The gate terminal of the second transistor M2 serves as the input terminal of the common-source cascode amplifier unit 20 or is coupled to the input terminal of the common-source cascode amplifier unit 20. The source terminal of the second transistor M2 is coupled to the source terminal of the third transistor M3, and the drain terminal of the second transistor M2 is coupled to the source terminal of the third transistor M3. The gate terminal of the third transistor M3 is adapted to receive a preset second bias control signal Vg2, and the drain terminal of the third transistor M3 serves as the output terminal of the common-source cascode amplifier unit 20 or is coupled to the output terminal of the common-source cascode amplifier unit 20. The second transistor M2 serves as the common-source amplification stage of the common-source cascode amplifier unit 20, and the third transistor M3 serves as the common-gate stage of the common-source cascode amplifier unit 20.

[0083] In this embodiment, in order to improve the performance of the RF power unit circuit in this embodiment of the invention, the common source cascode amplifier unit 20 further includes a first clamping module 201, a second clamping module 202, a second filtering module 203, a voltage divider module 204, and an output impedance matching module 205.

[0084] The first terminal of the first clamping module 201 is coupled to the gate terminal M2 of the second transistor, and the second terminal of the first clamping module 201 is grounded. The first clamping module 201 can clamp the voltage signal input to the gate terminal of the second transistor M2 to prevent the voltage at the gate terminal of the second transistor M2 from changing too quickly, thereby protecting the second transistor M2.

[0085] Specifically, the first clamping module 201 includes a third resistor R3, a first diode D1, a second diode D2, a third diode D3, and a fourth diode D4. The first terminal of the third resistor R3 is coupled to the gate terminal of the second transistor M2, the second terminal of the third resistor R3 is coupled to the cathode of the first diode D1, the anode of the first diode D1 is coupled to the cathode of the second diode D2, the anode of the second diode D2 is coupled to the anode of the third diode D3, the cathode of the third diode D3 is coupled to the anode of the fourth diode D4, and the cathode of the fourth diode D4 is grounded.

[0086] The first terminal of the second clamping module 202 is coupled to the gate terminal of the third transistor M3, and the second terminal of the second clamping module 202 is grounded. The second clamping module 202 can clamp the voltage signal input to the gate terminal M3 of the third transistor to prevent the voltage at the gate terminal of the third transistor M3 from changing too quickly, thereby protecting the third transistor M3.

[0087] Specifically, the second clamping module 202 includes a fourth resistor R4, a fifth diode D5, a sixth diode D6, a seventh diode D7, and an eighth diode D8. The first terminal of the fourth resistor R4 is coupled to the gate terminal of the third transistor M3; the second terminal of the fourth resistor R4 is coupled to the cathode of the fifth diode D5; the anode of the fifth diode D5 is coupled to the cathode of the sixth diode D6; the anode of the sixth diode D6 is coupled to the anode of the seventh diode D7; the cathode of the seventh diode D7 is coupled to the anode of the eighth diode D8; and the cathode of the eighth diode D8 is grounded.

[0088] The first terminal of the second filtering module 203 is coupled to the gate terminal of the third transistor M3, and the second terminal of the second filtering module 203 is grounded. The second filtering module 203 can filter out AC signals in the bias control signal input to the gate terminal of the third transistor.

[0089] Specifically, the second filter module 203 includes a fifth resistor R5, a fourth capacitor C4, a fifth capacitor C5, a sixth capacitor C6, and a seventh capacitor C7. The first terminal of the fifth resistor R5 is grounded, and the second terminal of the fifth resistor R5 is coupled to the first terminals of the fourth capacitor C4, the fifth capacitor C5, the sixth capacitor C6, and the seventh capacitor C7, respectively. The second terminals of the fourth capacitor C4, the fifth capacitor C5, the sixth capacitor C6, and the seventh capacitor C7 are all coupled to the gate terminal of the third transistor M3.

[0090] The first terminal of the voltage divider module 204 is used to receive the second bias control signal Vg2, and the second terminal of the voltage divider module 204 is coupled to the gate terminal of the third transistor M3. The voltage divider module 204 can divide the second bias control signal Vg2 and then input it to the gate terminal of the third transistor M3.

[0091] Specifically, the voltage divider module 204 includes a sixth resistor R6. The first end of the sixth resistor R6 serves as the first end of the voltage divider module 204 or is coupled to the first end of the voltage divider module 204, and is used to receive the second bias control signal Vg2. The second end of the sixth resistor R6 serves as the second end of the voltage divider module 204 or is coupled to the second end of the voltage divider module 204.

[0092] The first terminal of the output impedance matching module 205 is coupled to the drain terminal of the second transistor M2, and the second terminal of the output impedance matching module 205 is coupled to the drain terminal of the third transistor M3. The output impedance matching module 205 can perform output impedance matching on the amplified input signal output from the source terminal of the second transistor M2.

[0093] Specifically, the output impedance matching module 205 includes an eighth capacitor C8 and a ninth capacitor C9. The first terminals of both the eighth capacitor C8 and the ninth capacitor C9 are coupled to the drain of the second transistor M2, and the second terminals of both the eighth capacitor C8 and the ninth capacitor C9 are coupled to the drain of the third transistor.

[0094] The cascode amplifier unit in this embodiment of the invention can effectively reduce the Miller capacitance effect and increase the small signal gain. Since the second and third transistors in the cascode amplifier unit have the characteristic of shielding input devices, the voltage change at the source end is not affected by the voltage change at the output node. Therefore, the output impedance can be greatly improved, and the isolation performance between power amplifier stages and the stability of the system are also significantly improved.

[0095] Figure 4 The small-signal equivalent circuit diagram of the common-source cascode unit in an embodiment of the present invention is shown.

[0096] Please see Figure 4 When both the second transistor M2 and the third transistor M3 are operating in the saturation region, neglecting the body effect, the cascode amplifier unit can be considered as a cascode stage structure with a negative feedback resistor, and its output impedance can be expressed as:

[0097] Rout=[1+(gm2+gmb2)ro2]ro1+ro2 (2)

[0098] When gmro is much greater than 1, then:

[0099] Rout≈(gm2+gmb2)ro1*ro2 (3)

[0100] Wherein, Rout represents the output impedance of the common source cascode amplifier unit, ro1 represents the internal resistance of the second transistor M2, ro2 represents the internal resistance of the third transistor M3, gm1 represents the transconductance of the second transistor M2, gm2 represents the transconductance of the third transistor M3, and gmb2 represents the back gate transconductance of the second transistor M2.

[0101] Therefore, it can be seen that the common-source cascode amplifier unit can increase the output impedance to (gm2+gmb2)ro2 times that of transistor M1. Thus, the common-source cascode amplifier unit in this embodiment can effectively improve the output impedance.

[0102] The RF power unit circuit in this embodiment of the invention uses a predistortion processing unit to predistort the RF input signal to compensate for the nonlinear distortion caused by the cascode amplifier unit directly amplifying the RF input signal. This increases the linearity of the RF power unit circuit, improves its performance, and consequently improves the performance of the RF power amplifier.

[0103] Accordingly, this embodiment of the invention also provides a radio frequency (RF) power amplifier, which includes the aforementioned RF power unit circuit. The RF power unit circuit has been described in detail in the foregoing sections and will not be repeated here.

[0104] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A radio frequency power unit circuit, characterized in that, include: A predistortion processing unit is coupled between the radio frequency input signal and the common source cascode amplifier unit, and is adapted to receive the radio frequency input signal and perform predistortion processing on the radio frequency input signal; The common-source common-gate amplifier unit is coupled to the output terminal of the predistortion processing unit and is adapted to amplify the input signal after predistortion processing; The pre-distortion processing unit includes: A first bias module, wherein the input terminal of the first bias module is adapted to receive a first bias control signal, the output terminal of the first bias module is coupled to a capacitive coupling module, and is adapted to provide a bias voltage to the capacitive coupling module based on the first bias control signal; the first bias module includes a first transistor; the gate terminal of the first transistor is adapted to receive the first bias control signal, the source terminal of the first transistor is coupled to the capacitive coupling module, and the drain terminal of the first transistor is coupled to a preset power supply voltage; A capacitive coupling module, wherein the input terminal of the capacitive coupling module serves as the input terminal of the predistortion processing unit, the bias voltage input terminal of the capacitive coupling module is coupled to the output terminal of the first bias module, and the output terminal of the capacitive coupling module serves as the output terminal of the predistortion processing unit, and is suitable for performing predistortion processing on the radio frequency input signal; The common-source cascode amplifier unit includes a second transistor and a third transistor, wherein the second transistor serves as the common-source amplifier stage of the common-source cascode amplifier unit, and the third transistor serves as the common-gate stage of the common-source cascode amplifier unit; The gate terminal of the second transistor serves as the input terminal of the common-source common-gate amplifier unit, and the drain terminal of the second transistor is coupled to the source terminal of the third transistor. The gate terminal of the third transistor is adapted to receive a preset second bias control signal, and the drain terminal of the third transistor serves as the output terminal of the common-source common-gate amplifier unit.

2. The radio frequency power unit circuit according to claim 1, characterized in that, The first bias module further includes at least one of the following: The voltage divider submodule is coupled to the gate terminal of the first transistor and is adapted to perform voltage divider processing on the first bias control signal and then input it to the gate terminal of the first transistor. The filtering submodule is coupled to the gate terminal of the first transistor and is adapted to filter out the AC signal in the first bias control signal; A load submodule, coupled between the power supply voltage and the drain terminal of the first transistor, is adapted to provide a load for the operation of the first transistor.

3. The radio frequency power unit circuit according to claim 2, characterized in that, The voltage divider submodule includes a first resistor; The first end of the first resistor is adapted to receive the first bias control signal, and the second end of the first resistor is coupled to the gate terminal of the first transistor.

4. The radio frequency power unit circuit according to claim 2, characterized in that, The filtering submodule includes a first capacitor; The first terminal of the first capacitor is coupled to the gate terminal of the first transistor, and the second terminal of the first capacitor is grounded.

5. The radio frequency power unit circuit according to claim 2, characterized in that, The load submodule includes a second resistor; The first end of the second resistor is used to receive the power supply voltage, and the second end of the second resistor is coupled to the drain of the first transistor.

6. The radio frequency power unit circuit according to claim 1, characterized in that, The capacitive coupling module includes a second capacitor and a third capacitor; The first terminal of the second capacitor is used to receive the radio frequency input signal, the second terminal of the second capacitor is coupled to the first terminal of the third capacitor and serves as the bias voltage input terminal of the capacitive coupling module, and the second terminal of the third capacitor serves as the output terminal of the capacitive coupling module.

7. The radio frequency power unit circuit according to claim 1, characterized in that, The common-source cascode amplifier unit further includes at least one of the following: The first clamping module is coupled to the gate terminal of the second transistor and is adapted to clamp the voltage signal input to the gate terminal of the second transistor; The second clamping module is coupled to the gate terminal of the third transistor and is adapted to clamp the voltage signal input to the gate terminal of the third transistor before inputting it to the gate terminal of the third transistor. The second filtering module is coupled to the gate terminal of the third transistor and is adapted to perform AC signal isolation processing on the second bias control signal input to the gate terminal of the third transistor before inputting it to the gate terminal of the third transistor. A voltage divider module, coupled to the gate terminal of the third transistor, is adapted to perform voltage divider processing on the second bias control signal and then input it to the gate terminal of the third transistor. An output impedance matching module is coupled between the drain of the second transistor and the drain of the third transistor, and is adapted to perform output impedance matching on the amplified input signal output from the drain of the second transistor.

8. The radio frequency power unit circuit according to claim 7, characterized in that, The first clamping module includes a third resistor, a first diode, a second diode, a third diode, and a fourth diode; The first end of the third resistor is coupled to the gate of the second transistor, the second end of the third resistor is coupled to the cathode of the first diode, the anode of the first diode is coupled to the cathode of the second diode, the anode of the second diode is coupled to the anode of the third diode, the cathode of the third diode is coupled to the anode of the fourth diode, and the cathode of the fourth diode is grounded.

9. The radio frequency power unit circuit according to claim 7, characterized in that, The second clamping module includes a fourth resistor, a fifth diode, a sixth diode, a seventh diode, and an eighth diode; The first end of the fourth resistor is coupled to the gate of the third transistor, the second end of the fourth resistor is coupled to the negative terminal of the fifth diode, the positive terminal of the fifth diode is coupled to the negative terminal of the sixth diode, the positive terminal of the sixth diode is coupled to the positive terminal of the seventh diode, the negative terminal of the seventh diode is coupled to the positive terminal of the eighth diode, and the negative terminal of the eighth diode is grounded.

10. The radio frequency power unit circuit according to claim 7, characterized in that, The second filtering module includes a fifth resistor, a fourth capacitor, a fifth capacitor, a sixth capacitor, and a seventh capacitor; The first end of the fifth resistor is grounded, and the second end of the fifth resistor is coupled to the first end of the fourth capacitor, the first end of the fifth capacitor, the first end of the sixth capacitor, and the first end of the seventh capacitor, respectively. The second ends of the fourth capacitor, the fifth capacitor, the sixth capacitor, and the seventh capacitor are all coupled to the gate end of the third transistor.

11. The radio frequency power unit circuit according to claim 7, characterized in that, The voltage divider module includes a sixth resistor; The first end of the sixth resistor is used to receive the second bias control signal, and the second end of the sixth resistor is coupled to the gate terminal of the third transistor.

12. The radio frequency power unit circuit according to claim 7, characterized in that, The output impedance matching module includes an eighth capacitor and a ninth capacitor; The first terminal of the eighth capacitor and the first terminal of the ninth capacitor are both coupled to the drain terminal of the second transistor, and the second terminal of the eighth capacitor and the second terminal of the ninth capacitor are both coupled to the drain terminal of the third transistor.

13. A radio frequency power amplifier, characterized in that, Includes the radio frequency power unit circuit as described in any one of claims 1-12.

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