Semiconductor device and method of manufacturing the same

Abstract

An object is to provide a technique capable of suppressing cracks in a molding resin and suppressing the intrusion of moisture from the outside. A semiconductor device (100) includes: a heat sink (1); a semiconductor element (6) provided on the upper surface of the heat sink (1); an insulating sheet (2) provided on the lower surface of the heat sink (1); lead frames (8, 9) joined to the upper surface of the semiconductor element (6) via solder (10); and a molding resin (12) that encapsulates one end side of the lead frames (8, 9), the semiconductor element (6), the heat sink (1), and the insulating sheet (2). A hole portion (14) is formed from the upper surface of the molding resin (12) to the joint surface of the lead frame (8) with the semiconductor element (6), and a low Young's modulus resin (13) having a Young's modulus lower than that of the molding resin (12) is filled in the hole portion (14).

Description

Technical Field

[0001] The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. Background Art

[0002] When mounting a semiconductor device for power use to be resin-molded on a cooler, a heat dissipation grease for heat dissipation is filled so as to fill a gap of a contact surface between the semiconductor device and the cooler. Heat generated from the semiconductor device is conducted to the cooler via the heat dissipation grease, and heat exchange is performed with cooling water or air in the cooler, thereby cooling the semiconductor device.

[0003] In order to assemble a semiconductor device to an inverter of an electric vehicle or the like, miniaturization of the semiconductor device is required, and it is necessary to increase the power density of semiconductor elements. Therefore, miniaturization and improvement of heat dissipation performance are required for the semiconductor device. Therefore, it is considered to improve the thermal resistance by replacing the heat dissipation grease through which heat hardly passes in a heat dissipation path with a metal such as solder, and to implement a countermeasure against pumping out of the heat dissipation grease generated along with repeated operation of the semiconductor element.

[0004] However, replacing only the heat dissipation grease with solder causes other problems. For example, since it is necessary to set the semiconductor device at a high temperature during soldering, the solder joining the semiconductor element and the lead frame melts. The volume of the molten solder expands, so that cracks are generated in the molding resin, and the solder may be ejected.

[0005] There is disclosed a semiconductor device (for example, refer to Patent Document 1) in which a hole is formed that penetrates a chip pad from the molding resin to the solder in order to discharge an amount of solder whose volume expands when the solder joining the semiconductor element and the lead frame melts.

[0006] Patent Document 1: Japanese Patent Laid-Open No. 5-259344 Summary of the Invention

[0007] However, in the technique described in Patent Document 1, since moisture invades from the outside through the hole, there is a concern about deterioration of the withstand voltage and corrosion of the semiconductor element.

[0008] Therefore, an object of the present invention is to provide a technique capable of suppressing generation of cracks in the molding resin and suppressing invasion of moisture from the outside.

[0009] The semiconductor device according to the present invention includes: a heat sink; a semiconductor element disposed on the upper surface of the heat sink; an insulating sheet disposed on the lower surface of the heat sink; a lead frame bonded to the upper surface of the semiconductor element via solder; and a molding resin that encapsulates one end side of the lead frame, the semiconductor element, the heat sink, and the insulating sheet, and a hole portion is formed from the upper surface of the molding resin to the bonding surface of the lead frame with the semiconductor element, and a low Young's modulus resin having a Young's modulus lower than that of the molding resin is filled in the hole portion.

[0010] Effects of the Invention

[0011] According to the present invention, when the semiconductor device is soldered to a cooler, even if the solder bonding the semiconductor element and the lead frame melts and causes volume expansion, the excess solder of the amount of volume expansion can be accommodated in the hole portion by the softening of the low Young's modulus resin filled in the hole portion and the deformation in the direction of forming a space in the hole portion. Thus, an increase in the internal pressure of the molding resin can be suppressed, and therefore the generation of cracks in the molding resin can be suppressed.

[0012] Moreover, since the low Young's modulus resin is filled in the hole portion, intrusion of moisture from the outside can be suppressed.

[0013] The object, features, solutions, and advantages of the present invention will become clearer through the following detailed description and the accompanying drawings. Description of the Drawings

[0014] Figure 1 It is a cross-sectional view showing the state after mounting the semiconductor device according to Embodiment 1 on a cooler by soldering.

[0015] Figure 2 It is a top view of the semiconductor device according to Embodiment 1.

[0016] Figure 3 It is a cross-sectional view of the semiconductor device according to Embodiment 2.

[0017] Figure 4 It is a cross-sectional view showing the manufacturing method of the semiconductor device according to Embodiment 2.

[0018] Figure 5 It is a cross-sectional view of the semiconductor device according to Embodiment 3.

[0019] Figure 6 It is a cross-sectional view showing the manufacturing method of the semiconductor device according to Embodiment 3.

[0020] Figure 7 It is a cross-sectional view of the semiconductor device according to Embodiment 4.

[0021] Figure 8 It is a cross-sectional view showing a manufacturing method of a semiconductor device according to Embodiment 4. Detailed Embodiment

[0022] <Embodiment 1>

[0023] Embodiment 1 will be described below with reference to the accompanying drawings. Figure 1 It is a cross-sectional view showing a state after the semiconductor device 100 according to Embodiment 1 is mounted on the cooler 50 by soldering. Figure 2 It is a top view of the semiconductor device 100.

[0024] As Figure 1 and Figure 2 shown, the semiconductor device 100 is used for an inverter that controls an electric motor of an electric vehicle, a tram, etc., and a regenerative converter. The semiconductor device 100 is mounted on the upper surface of the cooler 50 via solder 5 instead of via a heat sink grease.

[0025] The semiconductor device 100 includes a heat sink 1, a semiconductor element 6, an insulating sheet 2, a plurality of lead frames 8, a plurality of lead frames 9, and a molding resin 12.

[0026] The semiconductor element 6 is provided on the upper surface of the heat sink 1 via solder 7. The insulating sheet 2 is pasted on the lower surface of the heat sink 1. The insulating sheet 2 is composed of an insulating resin 3 and a copper foil 4 pasted on the lower surface of the insulating resin 3.

[0027] One of the plurality of lead frames 8 is joined to the upper surface of the semiconductor element 6 via solder 10. One of the plurality of lead frames 9 is connected to the semiconductor element 6 via a wire 11.

[0028] The molding resin 12 is formed of, for example, an epoxy resin, and forms a package of the semiconductor device 100. The molding resin 12 encapsulates one end sides of the lead frames 8 and 9, the semiconductor element 6, the heat sink 1, and the insulating sheet 2. Specifically, the molding resin 12 encapsulates portions of the lead frames 8 and 9 other than the external leads 8a and 9a, the semiconductor element 6, the heat sink 1, and portions of the insulating sheet 2 other than the lower surface. Therefore, the lower surface of the copper foil 4 of the insulating sheet 2 is exposed from the molding resin 12.

[0029] A hole 14 is formed from the upper surface of the molding resin 12 to the bonding surface of the lead frame 8 to which the semiconductor element 6 is bonded. The hole 14 is formed in a longitudinal cylindrical shape, and the top view profile of the hole 14 is smaller than the top view profile of the solder 10 disposed on the bonding surface of the semiconductor element 6. A low Young's modulus resin 13 having a Young's modulus lower than that of the molding resin 12 is filled inside the hole 14. The low Young's modulus resin 13 is, for example, a silicone resin.

[0030] Next, a manufacturing method of the semiconductor device 100 according to Embodiment 1 will be described. First, in the chip bonding process, the semiconductor element 6 is bonded to the heat sink 1 by solder 7.

[0031] Next, in the frame bonding process, the lead frames 8 and 9 are fixed by a jig so as to be at a certain interval from the semiconductor element 6 to which the chip is bonded, and molten solder is introduced through a solder supply hole (not shown) of the lead frame 8 to fill the interval between the semiconductor element 6 and the lead frame 8 for bonding.

[0032] Next, in the wire bonding process, the signal wire pads of the semiconductor element 6 and the lead frame 9 are connected by wires 11.

[0033] Next, in the molding process, first, the insulating sheet 2 is disposed on the bottom surface of the lower mold that constitutes the mold. On the insulating sheet 2, an assembly of the heat sink 1, the semiconductor element 6, and the lead frames 8 and 9, i.e., the wire bonding completed product, is disposed. Then, the mold is closed with the upper mold that constitutes the upper part of the mold.

[0034] Then, after the molten resin that is the base of the molding resin 12 is introduced into the cavity of the mold from the gate of the mold and the resin is cured in the mold, the mold is opened and the semiconductor device 100 is taken out. At this time, the insulating resin 3 of the insulating sheet 2 is softened to bond the interface between the insulating resin 3 of the insulating sheet 2 and the heat sink 1 and the interface between the insulating resin 3 and the molding resin 12 together.

[0035] Next, in the lead processing process, using a lead processing die, unnecessary connecting portions in the lead frames 8 and 9 are cut off and bent into a specified shape.

[0036] Next, a hole 14 is formed from the upper surface of the molding resin 12 to the bonding surface of the lead frame 8 with the semiconductor element 6. A low Young's modulus resin 13 such as silicone resin is filled in the hole 14 and the low Young's modulus resin 13 is cured. In addition, mechanical methods such as punching or laser processing, or chemical methods such as etching are used to form the hole 14 in the molding resin 12 and the lead frame 8.

[0037] Next, the semiconductor device 100 is welded to the upper surface of the cooler 50, so that heat dissipation can be performed without using thermal grease.

[0038] Next, the operation and effects of the semiconductor device 100 according to Embodiment 1 will be described.

[0039] When the semiconductor device 100 is welded to the cooler 50, in order to bond with the solder 5, it is also necessary to set the cooler 50 and the semiconductor device 100 to a temperature equal to or higher than the melting temperature of the solder 5. Then, the solder in the molding resin 12 also melts and the volume of the solder expands.

[0040] The volume of the portion with solder in the molding resin 12 is equal to the volume of the solder before melting, and a volume for discharging the molten solder needs to be provided within the molding resin 12. The molding resin 12 is usually a hard resin such as an epoxy resin. If the molding resin 12 is deformed due to an increase in internal pressure, problems such as cracks may occur in the molding resin 12.

[0041] In contrast, the semiconductor device 100 according to Embodiment 1 includes: a heat sink 1; a semiconductor element 6 disposed on the upper surface of the heat sink 1; an insulating sheet 2 disposed on the lower surface of the heat sink 1; lead frames 8 and 9 joined to the upper surface of the semiconductor element 6 via a solder 10; and a molding resin 12 that encapsulates one end sides of the lead frames 8 and 9, the semiconductor element 6, the heat sink 1, and the insulating sheet 2. A hole portion 14 is formed from the upper surface of the molding resin 12 to the bonding surface of the lead frame 8 with the semiconductor element 6, and a low Young's modulus resin 13 having a Young's modulus lower than that of the molding resin 12 is filled in the hole portion 14.

[0042] Therefore, when the semiconductor device 100 is soldered to the cooler 50, even if the solder 10 joining the semiconductor element 6 and the lead frame 8 melts and expands in volume, the low Young's modulus resin 13 filled in the hole portion 14 softens and deforms in the direction of forming a space within the hole portion 14, and the excess solder 10 of the amount of volume expansion can be accommodated in the hole portion 14. Thus, an increase in the internal pressure of the molding resin 12 can be suppressed, and accordingly, the occurrence of cracks in the molding resin 12 can be suppressed.

[0043] Moreover, since the low Young's modulus resin 13 is filled in the hole portion 14, intrusion of moisture from the outside can be suppressed. Thus, deterioration of the withstand voltage and corrosion of the semiconductor element 6 can be suppressed. As a result, the semiconductor device 100 can be used for a long time.

[0044] <Embodiment 2>

[0045] Next, the semiconductor device 100A according to Embodiment 2 will be described. Figure 3 It is a cross-sectional view of the semiconductor device 100A. Figure 4 It is a cross-sectional view showing a manufacturing method of the semiconductor device 100A. In addition, in Embodiment 2, the same reference numerals are given to the structural elements that are the same as those described in Embodiment 1, and the description thereof is omitted.

[0046] As Figure 3 shown, in Embodiment 2, the structure of the hole portion 14 is different from that of the semiconductor device 100 according to Embodiment 1. The hole portion 14 is composed of a resin side hole portion 14a and a solder supply hole 14b. In addition, in Figure 3In this case, no bending process is performed in the lead processing step.

[0047] The solder supply hole 14b is formed through the lead frame 8. The solder supply hole 14b is a longitudinally cylindrical hole through which molten solder is supplied in the frame bonding step to form the solder 10 between the lead frame 8 and the semiconductor element 6. A resin side hole portion 14a is formed from the upper surface of the molding resin 12 to the upper surface of the lead frame 8. The resin side hole portion 14a is a longitudinally cylindrical hole and communicates with the solder supply hole 14b. The profile of the resin side hole portion 14a in a plan view is formed larger than the profile of the solder supply hole 14b in a plan view.

[0048] The low Young's modulus resin 13 is filled inside the hole portion 14, that is, inside the resin side hole portion 14a and the solder supply hole 14b.

[0049] Next, Figure 4 A method for manufacturing the semiconductor device 100A will be described. Here, only the parts different from those in the first embodiment will be described.

[0050] As Figure 4 shown, a cylindrical pin 33 protruding downward is provided inside the upper mold 31 constituting the mold 30. When the mold 30 is closed, the pin 33 abuts against the periphery of the solder supply hole 14b in the lead frame 8.

[0051] After the chip bonding step, the frame bonding step, and the wire bonding step are completed, in the molding step, first, the insulating sheet 2 is disposed on the bottom surface of the lower mold 32 constituting the mold 30. On top of the insulating sheet 2, an assembly of the heat sink 1, the semiconductor element 6, and the lead frames 8 and 9, that is, the wire bonding completed product, is disposed. Then, it is closed with the upper mold 31 constituting the upper part of the mold 30.

[0052] Then, the resin that becomes the base of the molding resin 12 is melted and flowed into the cavity 30a of the mold 30 from the gate of the mold 30, and the resin is cured inside the mold 30. At this time, since the pin 33 abuts against the periphery of the solder supply hole 14b, the solder supply hole 14b is not entered even when the resin is injected into the cavity 30a. In addition, since the resin side hole portion 14a is formed at the position of the pin 33, the resin side hole portion 14a communicates with the solder supply hole 14b to form the hole portion 14.

[0053] The mold 30 is opened, and the semiconductor device 100A is taken out. At this time, the insulating resin 3 of the insulating sheet 2 is softened, and the interface between the insulating resin 3 of the insulating sheet 2 and the heat sink 1, and the interface between the insulating resin 3 and the molding resin 12 are bonded together. Next, the lead processing step is performed.

[0054] As described above, in the semiconductor device 100A according to the second embodiment, the portion of the hole portion 14 formed in the lead frame 8 is the solder supply hole 14b that supplies solder between the lead frame 8 and the semiconductor element 6.

[0055] Therefore, in addition to the same effects as those of the first embodiment, by using the solder supply hole 14b originally formed in the lead frame 8 as a part of the hole portion 14 filled with the low Young's modulus resin 13, the hole portion 14 can be formed more easily.

[0056] In addition, the manufacturing method of the semiconductor device 100A according to the second embodiment includes: step (a) of disposing an insulating sheet 2 and an assembly on the bottom surface of the lower mold 32, the assembly being an assembly of the heat sink 1, the semiconductor element 6, and the lead frames 8 and 9; step (b) of bringing the pins 33 provided on the upper mold 31 into contact with the periphery of the solder supply hole 14b on the upper surface of the lead frame 8, closing the mold 30 with the pins 33 blocking the solder supply hole 14b, injecting resin into the cavity 30a formed by the upper mold 31 and the lower mold 32, and molding the molded resin 12 having the hole portion 14; and step (c) of injecting the low Young's modulus resin 13 into the hole portion 14.

[0057] Therefore, since the hole portion 14 is formed in step (b) of molding the molded resin 12, there is no need to open a hole in the molded resin 12 after this step.

[0058] <Embodiment 3>

[0059] Next, the semiconductor device 100B according to the third embodiment will be described. Figure 5 It is a cross-sectional view of the semiconductor device 100B according to the third embodiment. Figure 6 It is a cross-sectional view showing the manufacturing method of the semiconductor device 100B. In addition, in the third embodiment, the same reference numerals are given to the structural elements that are the same as those described in the first and second embodiments, and the description thereof is omitted.

[0060] As Figure 5 shown, in the third embodiment, the resin side hole portion 14a is not formed, and the low Young's modulus resin 13 is only filled in the solder supply hole 14b. Therefore, the low Young's modulus resin 13 does not expose on the upper surface of the molded resin 12. In addition, in Figure 5 the lead processing step, no bending process is performed.

[0061] Next, Figure 6 the manufacturing method of the semiconductor device 100B will be described. Here, only the parts different from those of the first and second embodiments will be described.

[0062] As Figure 6As shown, no pin 33 is provided inside the upper mold 31 that constitutes the mold 30. After the chip bonding process, the frame bonding process, and the wire bonding process are completed, and before the molding process, the low Young's modulus resin 13 is filled into the solder supply hole 14b, and the low Young's modulus resin 13 is cured.

[0063] As described above, the semiconductor device 100B according to Embodiment 3 includes: a heat sink 1; a semiconductor element 6 provided on the upper surface of the heat sink 1; an insulating sheet 2 provided on the lower surface of the heat sink 1; lead frames 8 and 9 joined to the upper surface of the semiconductor element 6 via solder 10; and a molding resin 12 that encapsulates one end sides of the lead frames 8 and 9, the semiconductor element 6, the heat sink 1, and the insulating sheet 2. A solder supply hole 14b for supplying solder between the lead frame 8 and the semiconductor element 6 is formed in the lead frame 8, and a low Young's modulus resin 13 having a Young's modulus lower than that of the molding resin 12 is filled in the solder supply hole 14b. Then, a molding process and a lead processing process are performed.

[0064] Therefore, when the semiconductor device 100B is soldered to the cooler 50, even if the solder 10 joining the semiconductor element 6 and the lead frame 8 melts and expands in volume, the low Young's modulus resin 13 filled in the solder supply hole 14b softens and deforms in the direction of forming a space in the solder supply hole 14b, and the excess solder 10 of the amount of volume expansion can be accommodated in the solder supply hole 14b. Thereby, an increase in the internal pressure of the molding resin 12 can be suppressed, and thus cracks generated in the molding resin 12 can be suppressed.

[0065] Moreover, since the interface between the molding resin 12 and the low Young's modulus resin 13 is not exposed on the upper surface of the molding resin 12, intrusion of moisture from the outside can be further suppressed. Thereby, deterioration of the breakdown voltage and corrosion of the semiconductor element 6 can be suppressed.

[0066] The manufacturing method of the semiconductor device 100B according to Embodiment 3 includes: step (d) of disposing the insulating sheet 2 and an assembly, which is an assembly of the heat sink 1, the semiconductor element 6, and the lead frames 8 and 9, on the bottom surface of the lower mold 32; step (e) of injecting the low Young's modulus resin 13 into the solder supply hole 14b of the lead frame 8; and step (f) of closing the mold 30 and injecting resin into the mold cavity 30a formed by the upper mold 31 and the lower mold 32 to mold the molding resin 12.

[0067] Therefore, by using the solder supply hole 14b, it is not necessary to open the molding resin 12 after the molding process, and the semiconductor device 100B can be easily manufactured.

[0068] <Embodiment 4>

[0069] Next, the semiconductor device 100C according to Embodiment 4 will be described. Figure 7 FIG. is a cross-sectional view of the semiconductor device 100C according to Embodiment 4. Figure 8 FIG. is a cross-sectional view showing a manufacturing method of the semiconductor device 100C. In addition, in Embodiment 4, structural elements that are the same as those described in Embodiments 1 to 3 are denoted by the same reference numerals and their description is omitted.

[0070] As Figure 7 shown, in Embodiment 4, the semiconductor device 100C has a lid 20 with respect to the semiconductor device 100B according to Embodiment 3. Also, the low Young's modulus resin 13 is not filled in the solder supply hole 14b. Further, in Figure 7 , no bending process is performed in the lead processing step.

[0071] The lid 20 is made of a resin plate or a metal plate so as not to be deformed by the pressure of the molding resin 12, and is disposed around the solder supply hole 14b on the upper surface of the lead frame 8. The lid 20 has a plan-view profile larger than the plan-view profile of the solder supply hole 14b so as to be able to block the solder supply hole 14b. The upper side of the solder supply hole 14b is closed by the lid 20, and the lower side of the solder supply hole 14b is closed by the solder 10. That is, a space is formed at the position where it contacts the solder 10. Therefore, even if the solder 10 that joins the semiconductor element 6 and the lead frame 8 melts and causes a volume expansion, the excess solder 10 of the amount of the volume expansion can be accommodated in the solder supply hole 14b.

[0072] Next, Figure 8 the manufacturing method of the semiconductor device 100C will be described. Here, only the parts different from those in Embodiments 1 to 3 will be described.

[0073] After the chip bonding process, the frame bonding process, and the wire bonding process are completed, in the molding process, first, the insulating sheet 2 is disposed on the bottom surface of the lower mold 32 that constitutes the lower part of the mold 30. On top of this insulating sheet 2, an assembly of the heat sink 1, the semiconductor element 6, and the lead frames 8 and 9, that is, a wire bonding completed product, is disposed. The lid 20 is disposed around the solder supply hole 14b on the upper surface of the lead frame 8 to form a space surrounded by the lid 20, the solder supply hole 14b, and the solder 10. Next, the mold is closed with the upper mold 31 that constitutes the upper part of the mold 30.

[0074] Then, after the molten resin that forms the basis of the molding resin 12 flows into the cavity 30a of the mold 30 from the gate of the mold 30 and the resin is cured within the mold 30, the mold is opened and the semiconductor device 100 is taken out. At this time, the insulating resin 3 of the insulating sheet 2 softens and bonds the interface between the insulating resin 3 of the insulating sheet 2 and the heat sink 1 and the interface between the insulating resin 3 and the molding resin 12. Then, a wire bonding process is performed.

[0075] As described above, the semiconductor device 100C according to the fourth embodiment includes: a heat sink 1; a semiconductor element 6 provided on the upper surface of the heat sink 1; an insulating sheet 2 provided on the lower surface of the heat sink 1; lead frames 8 and 9 joined to the upper surface of the semiconductor element 6 via solder 10; and a molding resin 12 that encapsulates one end side of the lead frames 8 and 9, the semiconductor element 6, the heat sink 1, and the insulating sheet 2. A solder supply hole 14b for supplying solder between the lead frame 8 and the semiconductor element 6 is formed in the lead frame 8, and a lid 20 is further provided. The lid 20 is disposed around the solder supply hole 14b on the upper surface of the lead frame 8 and closes the solder supply hole 14b.

[0076] Therefore, when the semiconductor device 100C is soldered to the cooler 50, even if the solder 10 that joins the semiconductor element 6 and the lead frame 8 melts and expands in volume, the excess solder 10 of the expanded volume can be accommodated in the solder supply hole 14b. Thereby, an increase in the internal pressure of the molding resin 12 can be suppressed, and thus the generation of cracks in the molding resin 12 can be suppressed.

[0077] Moreover, since the space capable of accommodating the solder 10 is not exposed on the upper surface of the molding resin 12, intrusion of moisture from the outside can be further suppressed. Thereby, deterioration of the withstand voltage and corrosion of the semiconductor element 6 can be further suppressed.

[0078] In addition, the manufacturing method of the semiconductor device 100C includes: step (g) of disposing the insulating sheet 2 and an assembly, which is an assembly of the heat sink 1, the semiconductor element 6, and the lead frames 8 and 9, on the bottom surface of the lower mold 32; and step (h) of disposing the lid 20 around the solder supply hole 14b on the upper surface of the lead frames 8 and 9, closing the solder supply hole 14b with the lid 20, closing the mold 30, and injecting resin into the cavity 30a formed by the upper mold 31 and the lower mold 32 to mold the molding resin 12.

[0079] Therefore, by using the solder supply hole 14b, it is not necessary to open the molding resin 12 after the molding process. And since it is not necessary to fill the low Young's modulus resin 13, the semiconductor device 100C can be manufactured more easily.

[0080] Although the present invention has been described in detail, the above description is illustrative in all aspects and is not limiting. It should be understood that numerous variations that are not illustrated can be envisioned.

[0081] In addition, the respective embodiments can be freely combined, and the respective embodiments can be appropriately modified and omitted.

[0082] Explanation of reference numerals

[0083] 1 Heat sink, 2 Insulating sheet, 6 Semiconductor element, 8, 9 Lead frame, 10 Solder, 12 Molding resin, 13 Low Young's modulus resin, 14 Hole portion, 14b Solder supply hole, 20 Cover, 30 Mold, 30a Mold cavity, 31 Upper mold, 32 Lower mold, 33 Pin, 100, 100A, 100B, 100C Semiconductor device.

Claims

1. A semiconductor device, comprising: A heat sink; A semiconductor element disposed on the upper surface of the heat sink; An insulating sheet disposed on the lower surface of the heat sink; A lead frame bonded to the upper surface of the semiconductor element via solder; And A molding resin for encapsulating one end side of the lead frame, the semiconductor element, the heat sink, and the insulating sheet, A solder supply hole for supplying the solder between the lead frame and the semiconductor element is formed in the lead frame, Only a low Young's modulus resin having a Young's modulus lower than that of the molding resin is filled in the solder supply hole, and the low Young's modulus resin does not expose on the upper surface of the molding resin.

2. A method for manufacturing a semiconductor device, for manufacturing the semiconductor device according to claim 1, The method for manufacturing the semiconductor device comprises: Step (d), disposing the insulating sheet and an assembly on the bottom surface of the lower mold, the assembly being an assembly of the heat sink, the semiconductor element, and the lead frame; Step (e), injecting the low Young's modulus resin into the solder supply hole of the lead frame; And Step (f), closing the mold, injecting resin into a mold cavity formed by the upper mold and the lower mold, and molding the molding resin.

3. A method for manufacturing a semiconductor device, for manufacturing a semiconductor device, The semiconductor device comprises: A heat sink; A semiconductor element disposed on the upper surface of the heat sink; An insulating sheet disposed on the lower surface of the heat sink; A lead frame bonded to the upper surface of the semiconductor element via solder; And A molding resin for encapsulating one end side of the lead frame, the semiconductor element, the heat sink, and the insulating sheet, A solder supply hole for supplying the solder between the lead frame and the semiconductor element is formed in the lead frame, The semiconductor device further comprises a cover disposed around the solder supply hole on the upper surface of the lead frame to block the solder supply hole, The method for manufacturing the semiconductor device comprises: Step (g), disposing the insulating sheet and an assembly on the bottom surface of the lower mold, the assembly being an assembly of the heat sink, the semiconductor element, and the lead frame; And Step (h), disposing the cover around the solder supply hole on the upper surface of the lead frame, closing the mold in a state where the cover blocks the solder supply hole, injecting resin into a mold cavity formed by the upper mold and the lower mold, and molding the molding resin.

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