Resonator and resonator device

Abstract

Provided are: a vibration portion having a base portion having a front end and a rear end facing the front end, and a plurality of vibration arms having fixed ends connected to the front end of the base portion and extending in a direction away from the front end, the plurality of vibration arms including at least one first vibration arm and a pair of second vibration arms on both sides of a first vibration arm group including the at least one first vibration arm in a direction crossing a long side direction; a holding portion provided at least partially around the vibration portion; and a holding arm having one end connected to the base portion and the other end connected to the holding portion, the plurality of vibration portions each having a piezoelectric film, and a lower electrode and an upper electrode facing each other with the piezoelectric film interposed therebetween, and a connection wiring connecting the upper electrodes of the pair of second vibration arms to each other is provided in a region of at least one of the base portion and the holding arm.

Description

TECHNICAL FIELD

[0001] The present application relates to a resonator and a resonator device. BACKGROUND

[0002] In electronic devices, as a device for implementing a timekeeping function, a resonator such as a piezoelectric resonator is used. Along with the miniaturization of electronic devices, resonators are also required to be miniaturized, and resonators manufactured using MEMS (Micro Electro Mechanical Systems) technology (hereinafter, also referred to as "MEMS resonator") are attracting attention.

[0003] For example, Patent Literature 1 describes a structure in which, in a resonator having four vibration arms, two vibration arms located on the inner side are made to flex and vibrate in phase opposition with two vibration arms located on the outer side.

[0004] Patent Literature 1: Japanese Patent No. 6292229

[0005] However, in the related art, the wiring for controlling the phase of the flexural vibration in the plurality of vibration arms has not been studied. SUMMARY

[0006] The present application has been achieved in view of such circumstances, and aims to provide a resonator and a resonator device capable of reducing the capacitance in the wiring and stabilizing the vibration characteristics by simplifying the wiring layout.

[0007] The resonator according to an aspect of the present application includes: a vibration portion having a base portion and a plurality of vibration arms, the base portion having a front end and a rear end facing the front end, the plurality of vibration arms having fixed ends connected to the front end of the base portion and extending in a direction away from the front end, the plurality of vibration arms including at least one first vibration arm and a pair of second vibration arms located on both sides of a direction intersecting a long side direction of a first vibration arm group including the at least one first vibration arm; a holding portion provided at least partially around the vibration portion; and a holding arm having one end connected to the base portion and the other end connected to the holding portion, the plurality of vibration portions having a piezoelectric film, and a lower electrode and an upper electrode facing each other with the piezoelectric film interposed therebetween, a connection wiring connecting the upper electrodes of the pair of second vibration arms to each other being provided in a region of at least one of the base portion and the holding arm.

[0008] According to the present application, by simplifying the wiring layout, the capacitance at the wiring can be reduced and the vibration characteristics can be stabilized. BRIEF DESCRIPTION OF DRAWINGS

[0009] Figure 1 is a perspective view schematically showing the outer appearance of a resonator device according to a first embodiment of the present application.

[0010] Figure 2This is an exploded perspective view schematically showing the structure of the resonant device according to the first embodiment of the present invention.

[0011] Figure 3 This is a top view of the resonator according to the first embodiment of the present invention with the upper substrate removed.

[0012] Figure 4 It is along Figure 3 A cross-sectional view of line AA′.

[0013] Figure 5 It is along Figure 3 A cross-sectional view of the BB' line.

[0014] Figure 6 This is a top view of the resonator according to the second embodiment of the present invention with the upper substrate removed.

[0015] Figure 7 It is along Figure 7 A cross-sectional view of line AA′.

[0016] Figure 8 This is a top view of the resonator according to the third embodiment of the present invention with the upper substrate removed.

[0017] Figure 9 This is a top view of the resonator according to the fourth embodiment of the present invention with the upper substrate removed.

[0018] Figure 10 This is a top view of the resonator according to the fifth embodiment of the present invention with the upper substrate removed. Detailed Implementation

[0019] [First Implementation]

[0020] Hereinafter, the first embodiment of the present invention will be described with reference to the accompanying drawings. Figure 1 This is a perspective view schematically showing the appearance of the resonant device 1 according to the first embodiment of the present invention. Furthermore, Figure 2 This is an exploded perspective view schematically showing the structure of the resonant device 1 according to the first embodiment of the present invention.

[0021] The resonant device 1 includes a resonator 10, an upper cover 30, and a lower cover 20. The upper cover 30 and the lower cover 20 are positioned opposite each other with the resonator 10 in between. That is, the resonant device 1 is configured such that the lower cover 20, the resonator 10, and the upper cover 30 are stacked in sequence.

[0022] Furthermore, the resonator 10 is sealed by joining the lower cover 20 and the upper cover 30. This forms a vibration space for the resonator 10. The resonator 10, lower cover 20, and upper cover 30 are each formed using a Si substrate. Moreover, the Si substrates of the resonator 10, lower cover 20, and upper cover 30 are bonded to each other. The resonator 10 and lower cover 20 can also be formed using an SOI substrate.

[0023] The resonator 10 is a MEMS resonator manufactured using MEMS technology. Furthermore, in this embodiment, the case where the resonator 10 is formed using a silicon substrate will be described as an example. The structure of the resonant device 1 will be described in detail below.

[0024] (1. Top cover 30)

[0025] The top cover 30 expands in a flat shape along the XY plane, forming a recess 31 on its back side, for example, with a rectangular opening. The recess 31 is surrounded by sidewalls 33, forming a local part of the space where the resonator 10 vibrates, i.e., the vibration space.

[0026] (2. Lower cover 20)

[0027] The lower cover 20 has: a rectangular flat plate 22 disposed along the XY plane; and a sidewall 23 extending from the periphery of the base plate 22 along the Z-axis direction (i.e., the stacking direction of the lower cover 20 and the resonator 10). A recess 21 is formed on the lower cover 20, specifically on the surface facing the resonator 10, by the surface of the base plate 22 and the inner surface of the sidewall 23. The recess 21 forms a portion of the vibration space of the resonator 10. The vibration space is hermetically sealed by the upper cover 30 and the lower cover 20, maintaining a vacuum state. Alternatively, the vibration space can be filled with a gas, such as an inert gas.

[0028] (3. Harmonic Oscillator 10)

[0029] Figure 3 This is a top view that schematically illustrates the construction of the resonator 10 according to this embodiment. (Using...) Figure 3 The structure of the resonator 10 according to this embodiment will be described. The resonator 10 includes a vibration part 120, a holding part 140, holding arms 111 and 112, wiring 191 and 192, and connecting wiring 193.

[0030] (a) Vibrating section 120

[0031] The vibrating part 120 has: along Figure 3 The outline of the rectangle is expanded in the XY plane of the orthogonal coordinate system. The vibrating part 120 is disposed inside the holding part 140, and a space is formed between the vibrating part 120 and the holding part 140 at a predetermined interval. Figure 3In this example, the vibrating part 120 has a base 130 and four vibrating arms 135A to 135D (also collectively referred to as "vibrating arms 135"). Furthermore, the number of vibrating arms is not limited to four; for example, it can be any number of three or more. In this embodiment, each vibrating arm 135 is integrally formed with the base 130.

[0032] The base 130 has a front end face 131A (hereinafter also referred to as "front end 131A") in the Y-axis direction and a rear end face 131B (hereinafter also referred to as "rear end 131B") in the Y-axis direction. The front end 131A and the rear end 131B are configured to face each other.

[0033] The front end 131A of the base 130 is connected to the vibrating arm 135. The rear end 131B of the base 130 is connected to the retaining arms 111 and 112. Additionally, Figure 3 In the example, when viewed from above, the base 130 has a generally rectangular shape, but is not limited to this; it can be formed approximately symmetrically with respect to an imaginary plane P defined by the perpendicular bisector of the long side 131a. The base 130 can also be, for example, a trapezoid with the long side 131b shorter than the long side 131a, or a semicircle with the long side 131a as its diameter. Furthermore, the long sides 131a, 131b, and the short sides 131c, 131d are not limited to straight lines and can also be curves.

[0034] The longest distance between the front end 131A and the rear end 131B of the base 130 in the Y-axis direction is, for example, about 40 μm. Furthermore, the longest distance between the side ends of the base 130 in the X-axis direction is, for example, about 285 μm. The dimensions of the base 130 are just one example and are not limited to the values ​​shown in this embodiment. The same applies to the dimensions of other parts.

[0035] Vibration arms 135 extend along the Y-axis and have the same size. Vibration arms 135 are arranged parallel to the Y-axis between the base 130 and the holding portion 140, with one end connected to the front end 131A of the base 130 as a fixed end, and the other end as an open end. Furthermore, the vibration arms 135 are arranged side-by-side at predetermined intervals in the X-axis direction. Additionally, the width of the vibration arms 135 in the X-axis direction is, for example, approximately 50 μm, and the length in the Y-axis direction is, for example, approximately 420 μm.

[0036] The open end of the vibrating arm 135 has a weight portion G. Compared to other parts of the vibrating arm 135, the weight portion G is relatively wider in the X-axis direction. For example, the width of the weight portion G in the X-axis direction is about 70 μm. The weight portion G is integrally formed with the vibrating arm 135 using the same process. Therefore, the weight per unit length of the vibrating arm 135 is heavier at the open end than at the fixed end. Thus, by having the weight portion G at the open end of the vibrating arm 135, the vertical amplitude of the vibrating arm 135 can be increased.

[0037] In the vibration unit 120 of this embodiment, two vibration arms 135A and 135D are arranged on the outer side in the X-axis direction, and two vibration arms 135B and 135C are arranged on the inner side. The distance W1 between the vibration arms 135B and 135C in the X-axis direction is set to be greater than the distance W2 between the outer vibration arms 135A and 135D (an example of the first vibration arm) and the inner vibration arms 135B and 135C (an example of the second vibration arm) adjacent to the outer vibration arms 135A and 135D. The distance W1 is, for example, about 30 μm, and the distance W2 is, for example, about 25 μm. By setting the distance W2 to be smaller than the distance W1, the vibration characteristics are improved. In addition, in order to miniaturize the resonant device 1, the distance W1 can also be set to be smaller than the distance W2, or it can be set at equal intervals.

[0038] (b) Holding section 140

[0039] The retaining portion 140 is formed in a rectangular frame shape along the XY plane. In top view, the retaining portion 140 is configured to surround the outer side of the vibrating portion 120 along the XY plane. Furthermore, the retaining portion 140 can be provided at least partially around the vibrating portion 120, and is not limited to a frame shape. For example, the retaining portion 140 can hold the vibrating portion 120 and be provided around the vibrating portion 120 to a degree that allows it to engage with the upper cover 30 and the lower cover 20.

[0040] In this embodiment, the retaining part 140 is composed of integrally formed prism-shaped frames 140a to 140d. Figure 3 As shown, frame 140a faces the open end of vibrating arm 135, with its long side oriented along the X-axis. Frame 140b faces the rear end 131B of base 130, with its long side oriented along the X-axis. Frame 140c faces the side end (short side 131c) of base 130 and vibrating arm 135A, with its long side oriented along the Y-axis. Both ends of frame 140c are connected to one end of frames 140a and 140b, respectively. Frame 140d faces the side end of base 130 and vibrating arm 135D, with its long side oriented along the Y-axis. Both ends of frame 140d are connected to the other ends of frames 140a and 140b, respectively.

[0041] (c) Maintaining arms 111, 112

[0042] Retaining arms 111 and 112 are disposed inside the retaining portion 140, connecting the rear end 131B of the base 130 to the frames 140c and 140d. Figure 3 As shown, retaining arm 111 and retaining arm 112 are formed approximately symmetrically relative to an imaginary plane P defined along the center line of the X-axis direction of the base 130 and parallel to the YZ plane.

[0043] The retaining arm 111 has arms 111a, 111b, and 111c. One end of the retaining arm 111 is connected to the rear end 131B of the base 130 and extends from there toward the frame 140b. Moreover, the retaining arm 111 bends toward the frame 140c (i.e., the X-axis direction), then bends toward the frame 140a (i.e., the Y-axis direction), and then bends again toward the frame 140c (i.e., the X-axis direction), with the other end connected to the frame 140c.

[0044] One end of arm 111a is connected to the rear end 131B of base 130. The other end of arm 111a is connected to one end of arm 111b on its side. Arm 111a has, for example, a width of about 20 μm in the X-axis direction and a length of about 40 μm in the Y-axis direction.

[0045] Arm 111b is configured such that its long side is parallel to the X-axis. One end of arm 111b connects to the side of the frame 140c opposite to the other end of arm 111a, and extends approximately perpendicularly to arm 111a in the X-axis direction. Furthermore, the other end of arm 111b connects to one end of arm 111c on the side of the vibrating part 120 opposite to the vibrating part. Arm 111b has, for example, a width of approximately 20 μm in the Y-axis direction and a length of approximately 75 μm in the X-axis direction.

[0046] Arm 111c is configured such that its long side is parallel to the Y-axis. One end of arm 111c is connected to the other end of arm 111b on its side, and the other end is connected to frame 140c. Arm 111c has, for example, a width of approximately 20 μm in the X-axis direction and a length of approximately 140 μm in the Y-axis direction.

[0047] Thus, the retaining arm 111 is configured such that it is connected to the base 130 at arm 111a, and after bending at the connection between arm 111a and arm 111b and the connection between arm 111b and arm 111c, it is connected to the retaining part 140.

[0048] The retaining arm 112 has arms 112a, 112b, and 112c. One end of the retaining arm 112 is connected to the rear end 131B of the base 130, and the other end is connected to the frame 140d. The retaining arm 112 extends from the rear end 131B of the base 130 toward the frame 140b and bends toward the frame 140d (i.e., the X-axis direction). Furthermore, the retaining arm 112 bends toward the frame 140a (i.e., the Y-axis direction) and then bends again toward the frame 140d (i.e., the X-axis direction), thereby connecting with the frame 140d.

[0049] In addition, the structures of arms 112a, 112b, and 112c are symmetrical to those of arms 111a, 111b, and 111c, respectively, so detailed descriptions are omitted.

[0050] (d) Wiring 191, 192

[0051] Wiring 191 and 192 are formed on the piezoelectric thin film F3 exposed on the surface of the resonator 10. Wiring 191 and 192 are wiring for connecting the metal layer E2 formed on the piezoelectric thin film F3 of the resonator 10 to an AC power source.

[0052] Figure 3 In the example shown, metal layer E2 includes a first region E2A, a second region E2B, and a third region E2C. The first region E2A extends from the end of the outer vibrating arm 135A in the X-axis direction to the rear end 131B of the base 130, and bends toward the inner vibrating arm 135B adjacent to vibrating arm 135A. The second region E2B extends from the end of the outer vibrating arm 135D in the X-axis direction to the rear end 131B of the base 130, and bends toward the inner vibrating arm 135C adjacent to vibrating arm 135D. The third region E2C extends from the respective ends of the inner vibrating arms 135B and 135C adjacent to vibrating arms 135A and 135D to the rear end 131B of the base 130, and connects at the base 130. A gap is provided between region 1 E2A and region 3 E2C, and a recess 194 for winding wiring 191 is formed on the end face of region 3 E2C adjacent to region 1 E2A. Similarly, a gap is provided between region 2 E2B and region 3 E2C.

[0053] Wiring 191 extends from the first region E2A of the metal layer E2 toward the frame 140d, bends toward the frame 140b from there, and extends toward the retaining arm 111. Furthermore, wiring 191 extends along the retaining arm 111 to the frame 140c, bends at the connection between the retaining arm 111 and the frame 140c, extends toward the frame 140b, and is led out toward the outside of the resonator 10.

[0054] Wiring 192 extends from the third region E2C of metal layer E2 toward the frame 140b and toward the retaining arm 112. Furthermore, wiring 192 extends along the retaining arm 112 to the frame 140d, bends at the connection between the retaining arm 111 and the frame 140d, extends toward the frame 140b, and is led out toward the outside of the resonator 10.

[0055] (e) Connecting cabling 193

[0056] The connecting wiring 193 connects the metal layers E2 of the outer vibrating arms 135A and 135D in the X-axis direction to each other. Figure 4 In the example shown, the connecting wiring 193 is connected at the base 130 in a straight line such that the first region E2A and the second region E2B are separated by the third region E2C. In this case, an insulating layer S is stacked on the metal layer E2 (third region E2C) of the inner vibrating arms 135B and 135C adjacent to the outer vibrating arms 135A and 135D, and the connecting wiring 193 is provided on the stacked insulating layer S.

[0057] (4. Layered structure)

[0058] use Figure 4 The layered structure of the harmonic oscillator 10 is explained. Figure 3 It is a schematic representation Figure 5 A schematic diagram of the AA′ cross section and the electrical connection of the resonator 10.

[0059] In the resonator 10, the holding portion 140, the base 130, the vibrating arm 135, and the holding arms 111 and 112 are integrally formed using the same process. In the resonator 10, firstly, a metal layer E1 (an example of the second electrode) is stacked on a Si (silicon) substrate F2. Furthermore, a piezoelectric thin film F3 (an example of a piezoelectric film) is stacked on top of the metal layer E1, and on the surface of the piezoelectric thin film F3 (an example of the upper surface), a first region E2A, a second region E2B, and a third region E2C of a metal layer E2 (an example of the first electrode) are stacked. Alternatively, by using a simplified silicon substrate that serves as a resistive element, the Si substrate F2 itself can also function as the metal layer E1, thus omitting the metal layer E1. Furthermore, an insulating layer S is stacked on the surface of the third region E2C of the metal layer E2. Connecting wiring 193 is stacked on the surface of the insulating layer S.

[0060] The Si substrate F2 is formed, for example, from a degenerate n-type Si semiconductor with a thickness of about 6 μm. As an n-type dopant, it can contain P (phosphorus), As (arsenic), Sb (antimony), etc. The resistivity of the degenerate Si used in the Si substrate F2 is, for example, less than 1.6 mΩ·cm, more preferably less than 1.2 mΩ·cm. Furthermore, a silicon oxide (e.g., SiO2) layer (temperature characteristic correction layer) F21 is formed on the lower surface of the Si substrate F2. This improves the temperature characteristics.

[0061] Metal layers E1 and E2 are formed, for example, using materials such as Mo (molybdenum) or aluminum (Al) with a thickness of approximately 0.1 to 0.2 μm. Metal layers E1 and E2 are formed into the desired shape through etching or other methods.

[0062] The metal layer E1 is formed to function as a lower electrode, for example, on the vibrating part 120. In addition, the metal layer E1 is formed on the holding arms 111, 112 and the holding part 140 to function as wiring for connecting the lower electrode to an AC power supply provided outside the resonator 10.

[0063] The metal layer E2 is formed on the vibrating part 120 and functions as an upper electrode. In addition, the metal layer E2 is formed on the holding arms 111, 112 and the holding part 140 and functions as wiring for connecting the upper electrode to a circuit provided outside the resonator 10.

[0064] Alternatively, when connecting the AC power supply to the lower or upper wiring, an electrode (an example of an external electrode) can be formed on the outer surface of the top cover 30 and the electrode connects the circuit to the lower or upper wiring. Or, a through hole can be formed in the top cover 30, and a wiring is provided by filling the through hole with conductive material and the wiring connects the AC power supply to the lower or upper wiring.

[0065] The insulating layer S is sandwiched between the first region E2A and the third region E2C of the metal layer E2 and between the second region E2B and the third region E2C of the metal layer E2, and electrically insulates them from each other.

[0066] Connecting wiring 193 connects the first region E2A and the second region E2B of metal layer E2. Connecting wiring 193 electrically connects the first region E2A and the second region E2B of metal layer E2 while ensuring insulation between the first region E2A and the third region E2C of metal layer E2 and between the second region E2B and the third region E2C of metal layer E2.

[0067] The piezoelectric film F3 is a piezoelectric film that converts applied voltage into vibration, and can be composed primarily of nitrides or oxides such as AlN (aluminum nitride). Specifically, the piezoelectric film F3 can be formed from ScAlN (scandium aluminum nitride). ScAlN is a material obtained by replacing a portion of the aluminum in aluminum nitride with scandium. Furthermore, the piezoelectric film F3 can have a thickness of, for example, 1 μm, but thicknesses of around 0.2 μm to 2 μm can also be used.

[0068] The piezoelectric film F3 expands and contracts in the in-plane direction (Y-axis direction) of the XY plane according to the electric field applied to the piezoelectric film F3 through the metal layers E1 and E2. Due to the expansion and contraction of the piezoelectric film F3, the vibrating arm 135 displaces its open end toward the inner surface of the lower cover 20 and the upper cover 30, and vibrates in an out-of-plane buckling vibration mode.

[0069] (5. The function of the harmonic oscillator)

[0070] Reference Figure 5 The function of the resonator 10 will be explained. In this embodiment, the phase of the electric field applied to the outer vibrating arms 135A and 135D is set to be opposite to the phase of the electric field applied to the inner vibrating arms 135B and 135C. Therefore, the outer vibrating arms 135A and 135D and the inner vibrating arms 135B and 135C are displaced in opposite directions. For example, if the outer vibrating arms 135A and 135D displace their open ends toward the inner surface of the upper cover 30, then the inner vibrating arms 135B and 135C displace their open ends toward the inner surface of the lower cover 20.

[0071] Therefore, in the resonator 10 according to this embodiment, when they vibrate in opposite phases, that is, when the vibrating arms 135A and 135B are wound around... Figure 6 The central axis r1, extending parallel to the Y-axis between the vibrating arms 135A and 135B, vibrates in opposite directions upwards and downwards. Furthermore, the vibrating arms 135C and 135D vibrate in opposite directions upwards and downwards about the central axis r2, extending parallel to the Y-axis between them. This generates torques in opposite directions along the central axes r1 and r2, resulting in buckling vibration at the base 130.

[0072] In the resonator 10 according to this embodiment, the metal layers E2 of the outer vibrating arms 135A and 135D are connected at the base 130 by connecting wires 193. Therefore, for example, compared to the case where the connecting wires connecting the outer vibrating arms 135A and 135D are routed around at the holding portion 140 or the like, the wiring distance of the connecting wires 193 is shortened, suppressing the parasitic capacitance of the connecting wires 193. As a result, the oscillation generated by the oscillation circuit of the resonator 10 can be stabilized. In addition, the wiring distance of the connecting wires 193 can also be shortened, thereby contributing to the miniaturization of the resonator 10.

[0073] [Second Implementation]

[0074] In the second embodiment and the following descriptions, matters shared with the first embodiment will be omitted, and only the differences will be explained. In particular, the same effects based on the same structure will not be mentioned sequentially in each embodiment.

[0075] Figure 7 This is a top view that schematically shows an example of the structure of the resonator 10 according to this embodiment. Hereinafter, the description will focus on the differences between the detailed structure of the resonator 10 according to this embodiment and that of the first embodiment. The resonator 10 according to this embodiment shares the point that the metal layers E2 of the outer side of the connecting wires 193 described in the first embodiment are connected at the base 130 by the connecting wires 193, but the peripheral structure of the connecting wires 193 is different from that of the first embodiment.

[0076] Specifically, such as Figure 6 As shown, in the resonator 10 according to this embodiment, an insulating layer SA is stacked on the surface of the connecting wiring 193. The insulating layer SA prevents the surface of the connecting wiring 193 from being exposed to the outside. Furthermore, in Figure 7 For ease of explanation, the top view is omitted. Figure 8 The record of the insulating layer SA.

[0077] In the resonator 10 of this embodiment, the surface of the connecting wire 193 is laminated with an insulating layer SA, so that foreign matter is not easily attached to the connecting wire 193, and electrical short circuits (short circuits) can be suppressed at the connecting wire 193.

[0078] [Third Implementation]

[0079] Figure 8This is a top view that schematically shows an example of the construction of the resonator 10 according to this embodiment. Hereinafter, the description will focus on the differences between the detailed structure of the resonator 10 according to this embodiment and that of the first embodiment. For the resonator 10 according to this embodiment, the peripheral structure of the connecting wiring 193 described in the first embodiment is different from that in the first embodiment.

[0080] (a) Keep arm 113

[0081] In this embodiment, one end of the retaining arm 113 is connected to the frame 140c and extends toward the frame 140b from there. Then, the retaining arm 113 bends and extends toward the frame 140d (X-axis direction), and from there bends toward the frame 140a (Y-axis direction), with the other end connected to the frame 140d. The portion of the retaining arm 113 extending along the X-axis direction is connected to the rear end 131B of the base 130 via a connecting portion 195.

[0082] (b) Wiring 191, 191A, 192

[0083] Figure 8 In the example shown, wiring 191 extends from the first region E2A of metal layer E2 toward the frame 140d, bends toward the frame 140b from there, passes through the connector 195, and extends toward the retaining arm 113. Furthermore, wiring 191 extends along the retaining arm 113 to the frame 140c, bends at the connector between the retaining arm 113 and the frame 140c, extends toward the frame 140b, and is led out toward the outside of the resonator 10.

[0084] Wiring 191A extends from the second region E2B of metal layer E2 toward frame 140c, bends toward frame 140b from there, passes through connector 195 and extends to retaining arm 113.

[0085] Wiring 192 extends from the third region E2C of metal layer E2 toward frame 140c, bends toward frame 140b from there, passes through connection 195 and extends toward retaining arm 113. Wiring 192 extends along retaining arm 113 to frame 140d, bends at the connection between retaining arm 111 and frame 140d, extends toward frame 140b, and is led out toward the outside of resonator 10.

[0086] (c) Connecting wiring 193

[0087] The connecting wiring 193 connects the wiring 191 and 191A extending from the metal layer E2 of the outer vibrating arms 135A and 135D in the X-axis direction to each other. Figure 9In the example shown, the connecting wire 193 connects wires 191 and 191A in a straight line at the retaining arm 113, with wire 192 spaced between them. In this case, an insulating layer is laminated on the wire 192, and the connecting wire 193 is formed on the laminated insulating layer.

[0088] In the resonator 10 according to this embodiment, the connecting wires 193 that connect the metal layers E2 of the outer vibrating arms 135A and 135D are provided in the holding arm 113. As a result, the connecting wires 193 are provided in the part with small amplitude, so that the vibration characteristics of the resonator 10 can be stabilized.

[0089] [Fourth Implementation]

[0090] Figure 9 This is a top view that schematically shows an example of the construction of the resonator 10 according to this embodiment. Hereinafter, the description will focus on the differences between the detailed structure of the resonator 10 according to this embodiment and that of the first embodiment. For the resonator 10 according to this embodiment, the peripheral structure of the connecting wiring 190 described in the first embodiment is different from that in the first embodiment.

[0091] (a) Keep arm 113

[0092] In this embodiment, one end of the retaining arm 113 is connected to the frame 140c and extends toward the frame 140b from there. Furthermore, the retaining arm 113 bends and extends toward the frame 140d (X-axis direction), and from there bends toward the frame 140a (Y-axis direction), with the other end connected to the frame 140d. The portion of the retaining arm 113 extending along the X-axis direction is connected to the rear end 131B of the base 130 via two connecting portions 195A and 195B.

[0093] (b) Wiring 191, 191A, 192

[0094] Figure 9 In the example shown, wiring 191 extends from the first region E2A of metal layer E2 toward the frame 140d, bends toward the frame 140b from there, passes through the connection 195A and extends toward the retaining arm 113. Furthermore, wiring 191 extends along the retaining arm 113 to the frame 140c, bends at the connection between the retaining arm 113 and the frame 140c, extends toward the frame 140b, and is led out toward the outside of the resonator 10.

[0095] Wiring 191A extends from the second region E2B of metal layer E2 toward frame 140c, bends toward frame 140b from there, passes through connector 195B and extends to retaining arm 113.

[0096] Wiring 192 extends from the third region E2C of metal layer E2 toward frame 140c, bends toward frame 140b from there, passes through connection 195B and extends toward retaining arm 113. Wiring 192 extends along retaining arm 113 to frame 140d, bends at the connection between retaining arm 111 and frame 140d, extends toward frame 140b, and is led out toward the outside of resonator 10.

[0097] (c) Connecting wiring 193

[0098] The connecting wiring 193 connects the wiring 191 and 191A extending from the metal layer E2 of the outer vibrating arms 135A and 135D in the X-axis direction to each other. Figure 10 In the example shown, the connecting wire 193 connects wires 191 and 191A in a straight line at the retaining arm 113, with wire 192 spaced between them. In this case, an insulating layer is laminated on the wire 192, and the connecting wire 193 is provided on the laminated insulating layer. Furthermore, the connecting wire 193 is located adjacent to the two connecting portions 195A and 195B. The location adjacent to the two connecting portions 195A and 195B is, for example, a position closer to the base 130 than the center position in the Y-axis direction of the portion extending along the X-axis direction in the retaining arm 113.

[0099] In the resonator 10 according to this embodiment, the connecting wiring 193 is provided with a position adjacent to the two connecting portions 195A and 195B. As a result, the strength of the connecting portions 195A and 195B that connect the base 130 and the retaining arm 113 can be increased.

[0100] [Fifth Implementation]

[0101] Figure 10 This is a top view that schematically shows an example of the construction of the resonator 10 according to this embodiment. Hereinafter, the description will focus on the differences between the detailed structure of the resonator 10 according to this embodiment and that of the first embodiment. For the resonator 10 according to this embodiment, the peripheral structure of the connecting wiring 190 described in the first embodiment is different from that in the first embodiment.

[0102] (a) Keep arm 113

[0103] In this embodiment, one end of the retaining arm 113 is connected to the frame 140c and extends toward the frame 140b from there. Furthermore, the retaining arm 113 bends and extends toward the frame 140d (X-axis direction), and from there bends toward the frame 140a (Y-axis direction), with the other end connected to the frame 140d. The portion of the retaining arm 113 extending along the X-axis direction is connected to the rear end 131B of the base 130 via three connecting portions 195A, 195B, and 195C.

[0104] (b) Wiring 191, 191A, 192

[0105] Figure 10 In the example shown, wiring 191 extends from the first region E2A of metal layer E2 toward the frame 140d, bends toward the frame 140b from there, passes through the connection 195A and extends toward the retaining arm 113. Furthermore, wiring 191 extends along the retaining arm 113 to the frame 140c, bends at the connection between the retaining arm 113 and the frame 140c, extends toward the frame 140b, and is led out toward the outside of the resonator 10.

[0106] Wiring 191A extends from the second region E2B of metal layer E2 toward frame 140c, bends toward frame 140b from there, passes through connector 195C and extends to retaining arm 113.

[0107] Wiring 192 extends from the third region E2C of metal layer E2 toward frame 140c, bends toward frame 140b from there, passes through connection 195B and extends toward retaining arm 113. Wiring 192 extends along retaining arm 113 to frame 140d, bends at the connection between retaining arm 111 and frame 140d, extends toward frame 140b, and is led out toward the outside of resonator 10.

[0108] (c) Connecting wiring 193

[0109] The connecting wiring 193 connects the wiring 191 and 191A extending from the metal layer E2 of the outer vibrating arms 135A and 135D in the X-axis direction to each other. ​In the example shown, the connecting wire 193 connects wires 191 and 191A in a straight line at the retaining arm 113, with wire 192 spaced between them. In this case, an insulating layer is laminated on the wire 192, and the connecting wire 193 is provided on the laminated insulating layer. Furthermore, the connecting wire 193 is provided at a position adjacent to the three connecting portions 195A, 195B, and 195C. The position adjacent to the three or more connecting portions 195A and 195B is, for example, a position closer to the base 130 than the center position in the Y-axis direction of the portion extending along the X-axis direction in the retaining arm 113.

[0110] In the resonator 10 according to this embodiment, the connecting wiring 193 is provided in a position adjacent to the three connecting portions 195A, 195B, and 195C. As a result, the strength of the connecting portions 195A, 195B, and 195C that connect the base 130 to the retaining arm 113 can be increased.

[0111] Furthermore, the resonant device 1 according to this embodiment includes: the aforementioned resonator 10; an upper cover 30 and a lower cover 20, which are disposed facing each other with respect to the resonator 10 spaced apart; and external electrodes. The resonant device 1 according to this embodiment can suppress the situation where the protective film 235 formed on the vibrating part 120 becomes charged, and therefore, it can prevent the variation of the resonant frequency caused by the charge on the vibrating part 120.

[0112] The following describes some or all of the embodiments of the present invention and their effects. However, the present invention is not limited to the following descriptions.

[0113] According to one aspect of the present invention, a resonator is provided, comprising: a vibrating part having a base and a plurality of vibrating arms, the base having a front end and a rear end facing the front end, the fixed ends of the plurality of vibrating arms being connected to the front end of the base, and the plurality of vibrating arms extending in a direction away from the front end, the plurality of vibrating arms including at least one first vibrating arm and a pair of second vibrating arms located on both sides of the first vibrating arm group including at least one first vibrating arm in a direction intersecting the long side direction; a holding part being disposed at least partially around the vibrating part; and a holding arm having one end connected to the base and the other end connected to the holding part, the plurality of vibrating parts having: a piezoelectric film, and a lower electrode and an upper electrode disposed facing each other with a spacer between them, and connecting wiring connecting the upper electrodes of the pair of second vibrating arms to each other being disposed in a region of at least one of the base and the holding arm.

[0114] As one method, an insulating layer is stacked on the upper electrode of at least one first vibrating arm, and connecting wiring is provided on the stacked insulating layer.

[0115] As one approach, a resonator is provided in which the holding arm includes two connecting portions connected to the base, and connecting wiring is disposed at a position overlapping the two connecting portions in a direction intersecting the long side direction of a plurality of vibrating arms.

[0116] As one approach, a resonator is provided in which the holding arm includes three or more connecting parts connected to the base, and connecting wiring is provided at a position overlapping the three or more connecting parts in a direction that intersects the long side direction of the plurality of vibrating arms.

[0117] As one approach, a resonant device is provided, comprising: any of the aforementioned resonators; an upper cover and a lower cover disposed opposite to each other with respect to the resonator; and external electrodes that apply a voltage to a pair of electrodes.

[0118] As explained above, according to one aspect of the present invention, by simplifying the winding of the wiring, the capacitance at the wiring point can be reduced, thereby stabilizing the vibration characteristics.

[0119] Furthermore, the embodiments described above are for ease of understanding of the present invention and are not intended to limit the scope of the invention. The present invention can be modified / improved without departing from its spirit, and the present invention also includes its equivalents. That is, any method obtained by appropriately applying design changes to each embodiment by those skilled in the art, as long as it possesses the features of the present invention, is also included within the scope of the present invention. For example, the elements, their configuration, materials, conditions, shapes, sizes, etc., of each embodiment are not limited to the examples and can be appropriately modified. Moreover, the elements of each embodiment can be combined as long as it is technically possible, and any combination thereof that includes the features of the present invention is included within the scope of the present invention.

[0120] Explanation of reference numerals in the attached figures

[0121] 10...Resonator; 30...Upper cover; 20...Lower cover; 140...Holding part; 140a~d...Frame; 111, 112...Holding arms; 120...Vibrating part; 130...Base; 135A~D...Vibrating arms; F2...Si substrate; 191, 191A, 192...Wiring; 193...Connecting wiring.

Claims

1. A resonator, characterized by, Possessing: a vibration section having a base section having a front end and a rear end facing the front end, and a plurality of vibration arms having fixed ends connected to the front end of the base section and extending in a direction away from the front end, the plurality of vibration arms including at least one first vibration arm and a pair of second vibration arms on both sides in a direction crossing a long side direction of a first vibration arm group including the at least one first vibration arm; a holding section provided at least partially around the vibration section; and a holding arm having one end connected to the base section and the other end connected to the holding section and capable of vibrating due to vibration of the vibration section, the plurality of vibration sections having a piezoelectric film, and a lower electrode and an upper electrode facing each other with the piezoelectric film interposed therebetween, a connection wiring connecting the upper electrodes of the pair of second vibration arms to each other is provided in a region of at least one of the base section and the holding arm.

2. The resonator according to claim 1, wherein an insulating layer is stacked on the upper electrode in the at least one first vibration arm, and the connection wiring is provided on the insulating layer.

3. The resonator according to claim 1 or 2, wherein the holding arm includes two connection sections connected to the base section, the connection wiring is provided at a position adjacent to the two connection sections.

4. The resonator according to claim 1 or 2, wherein the holding arm includes three or more connection sections connected to the base section, the connection wiring is provided at a position adjacent to the three or more connection sections.

5. The resonator according to claim 3, wherein the holding arm includes three or more connection sections connected to the base section, the connection wiring is provided at a position adjacent to the three or more connection sections.

6. A resonator device, characterized by Possessing: the resonator according to any one of claims 1 to 5; an upper cover and a lower cover facing each other with the resonator interposed therebetween; and an external electrode applying a voltage to the pair of electrodes.

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