High-frequency circuit, high-frequency module, and communication device

Abstract

A high frequency circuit (1) comprises: a switch (51) having a terminal (511) connected to an antenna connection terminal (100) and having terminals (512-514); a duplexer (61) connected to the terminal (512) and having a passband including a communication frequency band A; a duplexer (62) connected to the terminal (513) and having a passband including a communication frequency band B capable of communicating simultaneously with the communication frequency band A; a switch (52) having a terminal (521) connected to the terminal (514) and having terminals (522 and 523); a duplexer (63) connected to the terminal (522) and having a passband including a communication frequency band C; and a transceiving filter (64) connected to the terminal (523) and having a passband including a communication frequency band D.

Description

Technical Field

[0001] This invention relates to high-frequency circuits, high-frequency modules, and communication devices. Background Technology

[0002] In recent years, portable phones have required not only a single terminal to handle multiple communication systems and multiple communication frequency bands, but also simultaneous communication across multiple communication systems and / or multiple communication frequency bands. For example, Patent Document 1 discloses a front-end module for handling carrier aggregation (CA).

[0003] Prior art literature

[0004] Patent documents

[0005] Patent Document 1: U.S. Patent Application Publication No. 2015 / 0133067 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] In such prior art, the number of switch terminals increases in order to connect multiple filters, sometimes resulting in a deterioration of the switch's pass characteristics due to the parasitic capacitance (hereinafter referred to as the turn-off capacitance) of the switch's non-connected terminals.

[0008] Therefore, the present invention provides a high-frequency circuit, a high-frequency module, and a communication device that can improve the pass-through characteristics of a switch.

[0009] Technical solutions for solving the problem

[0010] One aspect of the present invention relates to a high-frequency module comprising: a first switch having a first terminal connected to an antenna connection terminal, and having a second terminal, a third terminal, and a fourth terminal; a first filter connected to the second terminal and having a passband including a first communication frequency band; a second filter connected to the third terminal and having a passband including a second communication frequency band capable of communicating simultaneously with the first communication frequency band; a second switch having a fifth terminal connected to the fourth terminal, and having a sixth terminal and a seventh terminal; a third filter connected to the sixth terminal and having a passband including a third communication frequency band; and a fourth filter connected to the seventh terminal and having a passband including a fourth communication frequency band.

[0011] Invention Effects

[0012] According to one aspect of the present invention, a high-frequency module is capable of improving the pass-through characteristics of a switch. Attached Figure Description

[0013] Figure 1This is a circuit structure diagram of the high-frequency circuit and communication device involved in Embodiment 1.

[0014] Figure 2 This is a circuit diagram showing an example of the connection state of the high-frequency circuit according to Embodiment 1.

[0015] Figure 3 This is a circuit diagram illustrating an example of the connection state of the high-frequency circuit involved in the comparative example.

[0016] Figure 4 This is a top view of the high-frequency module involved in Implementation Method 2.

[0017] Figure 5 This is a top view of the high-frequency module involved in Implementation Method 3.

[0018] Figure 6 This is a cross-sectional view of the high-frequency module involved in Implementation Method 3.

[0019] Figure 7 This is a top view of the high-frequency module involved in implementation method 4. Detailed Implementation

[0020] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Furthermore, the embodiments described below are either general or specific examples. The numerical values, shapes, materials, constituent elements, arrangements of constituent elements, and connection methods shown in the following embodiments are examples and are not intended to limit the present invention.

[0021] Furthermore, the figures are schematic diagrams that have been appropriately emphasized, omitted, or proportionally adjusted for the purpose of illustrating the invention, and are not necessarily rigorous illustrations. Sometimes they differ from the actual shapes, positional relationships, and proportions. In the figures, substantially identical structures are labeled with the same reference numerals, and sometimes repeated descriptions are omitted or simplified.

[0022] In the following figures, the x-axis and y-axis are mutually orthogonal axes on a plane parallel to the main surface of the module substrate. Furthermore, the z-axis is perpendicular to the main surface of the module substrate, with its positive direction representing the upward direction and its negative direction representing the downward direction.

[0023] Furthermore, in the circuit structure of this invention, the term "connection" includes not only direct connection via connection terminals and / or wiring conductors, but also electrical connection via other circuit elements. Additionally, the term "connection between A and B" means connection between A and B, and between both A and B.

[0024] Furthermore, in the component configuration of the present invention, the term "top view of the module substrate" means observing an object by orthographically projecting it from the positive z-axis onto the xy-plane. Furthermore, the term "overlap of A and B in top view of the module substrate" means that at least a portion of region A projected onto the xy-plane overlaps with at least a portion of region B projected onto the xv-plane. Furthermore, the term "component disposed on the substrate" includes, in addition to the case where the component is disposed on the substrate in contact with the substrate, the case where the component is disposed above the substrate without contacting the substrate (e.g., the component is stacked on top of other components disposed on the substrate), and the case where part or all of the component is embedded within the substrate. Furthermore, the term "component disposed on the main surface of the substrate" includes, in addition to the case where the component is disposed on the main surface of the substrate in contact with the main surface, the case where the component is disposed above the main surface without contacting the main surface, and the case where part of the component is embedded within the substrate from the main surface side.

[0025] Furthermore, terms such as "parallel" and "perpendicular" that indicate the relationship between elements do not only mean strict, but also imply a substantially equal range, for example, including a degree of error of a few percent.

[0026] (Implementation Method 1)

[0027] [11 Circuit structure of high-frequency circuit 1 and communication device 5]

[0028] Reference Figure 1 The circuit structure of the high-frequency circuit 1 and the communication device 5 involved in this embodiment will be described. Figure 1 This is a circuit structure diagram of the high-frequency circuit 1 and the communication device 5 involved in Implementation Method 1.

[0029] [1.1.1 Circuit structure of communication device 5]

[0030] First, the circuit structure of communication device 5 will be explained. For example... Figure 1 As shown, the communication device 5 according to this embodiment includes a high-frequency circuit 1, an antenna 2, an RFIC 3, and a BBIC 4.

[0031] High-frequency circuit 1 transmits high-frequency signals between antenna 2 and RFIC 3. The internal structure of high-frequency circuit 1 will be described later.

[0032] Antenna 2 is connected to antenna connection terminal 100 of high-frequency circuit 1 to transmit high-frequency signals output from high-frequency circuit 1. In addition, it receives high-frequency signals from the outside and outputs them to high-frequency circuit 1.

[0033] RFIC3 is an example of a signal processing circuit that processes high-frequency signals. Specifically, RFIC3 processes the high-frequency received signal input via the receiving path of high-frequency circuit 1 using down-conversion or the like, and outputs the received signal generated by the signal processing to BBIC4. Furthermore, RFIC3 processes the transmitted signal input from BBIC4 using up-conversion or the like, and outputs the high-frequency transmitted signal generated by the signal processing to the transmitting path of high-frequency circuit 1. In addition, RFIC3 has a control unit that controls the switches and amplifiers in high-frequency circuit 1. Furthermore, the control unit, as part or all of the function of RFIC3, can be installed externally to RFIC3, for example, it can be installed in BBIC4 or high-frequency circuit 1.

[0034] BBIC4 is a baseband signal processing circuit that performs signal processing using an intermediate frequency band that is lower in frequency than the high-frequency signal transmitted by high-frequency circuit 1. The signals processed by BBIC4 can be, for example, image signals for image display and / or sound signals for communication via a speaker.

[0035] Furthermore, in the communication device 5 according to this embodiment, the antenna 2 and BBIC4 are not essential components.

[0036] [1.1.2 Circuit Structure of High-Frequency Circuit 1]

[0037] Next, the circuit structure of high-frequency circuit 1 will be described. For example... Figure 1 As shown, the high-frequency circuit 1 includes power amplifiers 11-13, low-noise amplifiers 21-23, switches 51-53, duplexers 61-63, transceiver filters 64, matching circuit (MN) 71, antenna connection terminal 100, high-frequency input terminals 111-113 and high-frequency output terminals 121-123.

[0038] Antenna connection terminal 100 is an example of an external connection terminal, which is connected to antenna 2.

[0039] High-frequency input terminals 111 to 113 are examples of external connection terminals used to receive high-frequency transmission signals from outside the high-frequency circuit 1. In this embodiment, high-frequency input terminal 111 receives transmission signals of communication band A from RFIC3. Furthermore, high-frequency input terminal 112 receives transmission signals of communication band B from RFIC3. Furthermore, high-frequency input terminal 113 receives transmission signals of communication bands C and D from RFIC3.

[0040] High-frequency output terminals 121 to 123 are examples of external connection terminals used to provide high-frequency received signals to the outside of the high-frequency circuit 1. In this embodiment, high-frequency output terminal 121 provides a received signal of communication band A to RFIC 3. Furthermore, high-frequency output terminal 122 provides a received signal of communication band B to RFIC 3. Additionally, high-frequency output terminal 123 provides received signals of communication bands C and D to RFIC 3.

[0041] A communication frequency band refers to a frequency band predefined by standardization organizations (such as 3GPP (3rd Generation Partnership Project) and IEEE (Institute of Electrical and Electronics Engineers)) for communication systems built using Radio Access Technology (RAT). Examples of communication frequency bands include, for instance, the 5G NR (5th Generation New Radio) band, the LTE (Long Term Evolution) band, and the WLAN (Wireless Local Area Network) band.

[0042] Communication band A corresponds to the first communication band. Communication band A is a communication band that can communicate simultaneously with communication bands B through D, and it is a communication band that uses Frequency Division Duplex (FDD) (hereinafter referred to as FDD band). For example, communication band A can use Band1 for LTE or n1 for 5G NR (uplink: 1920–1980 MHz, downlink: 2110–2170 MHz).

[0043] The ability to communicate simultaneously across multiple communication frequency bands means that at least one of the following is permitted: simultaneous transmission, simultaneous reception, and simultaneous transmission and reception across multiple frequency bands. This does not preclude the possibility of using multiple communication frequency bands individually. The combination of communication frequency bands capable of simultaneous communication is, for example, predefined by standardization organizations.

[0044] Communication band B corresponds to the second communication band. Communication band B is an FDD band that can communicate simultaneously with communication band A. For example, communication band B can use Band3 for LTE or n3 for 5G NR (uplink: 1710-1785MHz, downlink: 1805-1880MHz).

[0045] Communication band C corresponds to the third communication band. Communication band C is an FDD band that can communicate simultaneously with communication band A. For example, communication band C can use Band7 for LTE or n7 for 5G NR (uplink: 2500-2570MHz, downlink: 2620-2690MHz).

[0046] Communication band D corresponds to the 4th communication band. Communication band D is a communication band that can communicate simultaneously with communication band A, and it is a communication band that uses Time Division Duplex (TDD) (hereinafter referred to as the TDD band). For example, communication band D can use Band41 for LTE or n41 (2496-2690MHz) for 5G NR.

[0047] Communication frequency bands C and D overlap by at least a portion. That is, at least a portion of communication frequency band C is contained in communication frequency band D, and at least a portion of communication frequency band D is contained in communication frequency band C.

[0048] Furthermore, communication band A can communicate simultaneously with communication bands B through D, but it is not limited to this. For example, communication band A may not be able to communicate simultaneously with communication band C, and it may also not be able to communicate simultaneously with communication band D.

[0049] Furthermore, communication frequency bands A through C are not limited to the FDD band, and communication frequency band D is not limited to the TDD band. Communication frequency bands A through D can be either the FDD band or the TDD band.

[0050] Furthermore, although Band 1, Band 3, Band 7, and Band 41 for LTE are exemplified as communication bands A through D, communication bands A through D are not limited to these. For example, communication bands A and B can be any two of the LTE bands Band 1, Band 3, Band 32, and Band 40, or any two of the LTE bands Band 25, Band 30, and Band 66. In addition, communication bands A through D can also be communication bands used for 5G NR and / or WLAN.

[0051] The power amplifier 11 is capable of amplifying the high-frequency signal received by the high-frequency input terminal 111. Here, the power amplifier 11 is capable of amplifying the transmission signal of communication band A input from the high-frequency input terminal 111.

[0052] The power amplifier 12 is capable of amplifying the high-frequency signal received by the high-frequency input terminal 112. Here, the power amplifier 12 is capable of amplifying the transmission signal of communication band B input from the high-frequency input terminal 112.

[0053] The power amplifier 13 is capable of amplifying the high-frequency signal received by the high-frequency input terminal 113. Here, the power amplifier 13 is capable of amplifying the transmission signals of communication frequency bands C and D, respectively, input from the high-frequency input terminal 113.

[0054] The structure of each of power amplifiers 11 to 13 is not particularly limited. For example, at least one of power amplifiers 11 to 13 can also be a multi-stage amplifier. That is, at least one of power amplifiers 11 to 13 can also have multiple amplifying elements cascaded together. Furthermore, at least one of power amplifiers 11 to 13 can also have a structure that converts a high-frequency signal into a differential signal (i.e., a complementary signal) and amplifies it. At least one of such power amplifiers 11 to 13 is sometimes referred to as a differential amplifier. In this case, the output of at least one of power amplifiers 11 to 13 can also be a differential signal.

[0055] The low-noise amplifier 21 amplifies the high-frequency signal received by the antenna connection terminal 100. In this embodiment, the low-noise amplifier 21 amplifies the received signal of communication band A input from the antenna connection terminal 100 via the switch 51 and the receive filter 61R of the duplexer 61. The high-frequency signal amplified by the low-noise amplifier 21 is output to the high-frequency output terminal 121.

[0056] The low-noise amplifier 22 amplifies the high-frequency signal received by the antenna connection terminal 100. In this embodiment, the low-noise amplifier 22 amplifies the received signal of communication band B input from the antenna connection terminal 100 via the switch 51 and the receive filter 62R of the duplexer 62. The high-frequency signal amplified by the low-noise amplifier 22 is output to the high-frequency output terminal 122.

[0057] The low-noise amplifier 23 amplifies the high-frequency signal received by the antenna connection terminal 100. In this embodiment, the low-noise amplifier 23 amplifies the received signal of communication band C input from the antenna connection terminal 100 via switch 51, the receive filter 63R of the duplexer 63, and switch 53. Furthermore, the low-noise amplifier 23 amplifies the received signal of communication band D input from the antenna connection terminal 100 via switch 51, the transmit / receive filter 64, and switch 53. The high-frequency signal amplified by the low-noise amplifier 23 is output to the high-frequency output terminal 123.

[0058] Duplexer 61 is an example of a first filter, having a passband that includes communication band A. Duplexer 61 is capable of implementing FDD in communication band A. Duplexer 61 includes a transmit filter 61T and a receive filter 61R.

[0059] A transmit filter 61T (A-Tx) is connected between the power amplifier 11 and the antenna connection terminal 100. The transmit filter 61T has a passband that includes the uplink frequency band of communication band A. Therefore, the transmit filter 61T allows the transmit signal of communication band A from the high-frequency signal amplified by the power amplifier 11 to pass through.

[0060] A receive filter 61R (A-Rx) is connected between the low-noise amplifier 21 and the antenna connection terminal 100. The receive filter 61R has a passband that includes the downlink frequency band of communication band A. Therefore, the receive filter 61R allows the received signal of communication band A from the high-frequency signal input from the antenna connection terminal 100 to pass through.

[0061] Duplexer 62 is an example of a second filter, having a passband that includes communication band B. Duplexer 62 is capable of implementing FDD in communication band B. Duplexer 62 includes a transmit filter 62T and a receive filter 62R.

[0062] A transmit filter 62T (B-Tx) is connected between the power amplifier 12 and the antenna connection terminal 100. The transmit filter 62T has a passband that includes the uplink frequency band of communication band B. Therefore, the transmit filter 62T allows the transmit signal of communication band B from the high-frequency signal amplified by the power amplifier 12 to pass through.

[0063] A receive filter 62R (B-Rx) is connected between the low-noise amplifier 22 and the antenna connection terminal 100. The receive filter 62R has a passband that includes the downlink band of the communication band B. Therefore, the receive filter 62R allows the received signal of the communication band B from the high-frequency signal input from the antenna connection terminal 100 to pass through.

[0064] Duplexer 63 is an example of a third filter, having a passband that includes the communication band C. Duplexer 63 is capable of implementing FDD in the communication band C. Duplexer 63 includes a transmit filter 63T and a receive filter 63R.

[0065] A transmit filter 63T (C-Tx) is connected between the power amplifier 13 and the antenna connection terminal 100. The transmit filter 63T has a passband that includes the uplink frequency band of the communication frequency band C. Therefore, the transmit filter 63T allows the transmit signal of the communication frequency band C from the high-frequency signal amplified by the power amplifier 13 to pass through.

[0066] A receive filter 63R (C-Rx) is connected between the low-noise amplifier 23 and the antenna connection terminal 100. The receive filter 63R has a passband that includes the downlink band of the communication band C. Therefore, the receive filter 63R allows the received signal of the communication band C from the high-frequency signal input from the antenna connection terminal 100 to pass through.

[0067] Transceiver filter 64 (D-TRx), an example of the fourth filter, is connected between low-noise amplifier 23 and antenna connection terminal 100. Transceiver filter 64 has a passband that includes communication band D. Transceiver filter 64 allows the transmit signal of communication band D from the high-frequency signal amplified by power amplifier 13 to pass through, and allows the receive signal of communication band D from the high-frequency signal input from antenna connection terminal 100 to pass through.

[0068] Switch 51 is an example of a first switch, having terminals 511 to 514. Terminal 511 is an example of a first terminal, connected to antenna connection terminal 100. Terminal 512 is an example of a second terminal, connected to duplexer 61. Terminal 513 is an example of a third terminal, connected to duplexer 62. Terminal 514 is an example of a fourth terminal, connected to terminal 521 of switch 52 via matching circuit 71.

[0069] In such a connection structure, switch 51 can, for example, connect any one of terminals 512 to 514 to terminal 511 based on a control signal from RFIC3, and further can connect any combination of terminals 512 to 514 to terminal 511 simultaneously. Switch 51 is, for example, constructed from a multi-connection type switch circuit, and is called an antenna switch.

[0070] Switch 52 is an example of a second switch, having terminal 521 and terminals 522 and 523 that can be connected to terminal 521. Terminal 521 is an example of a fifth terminal, connected to terminal 514 of switch 51. Terminal 522 is an example of a sixth terminal, connected to duplexer 63. Terminal 523 is an example of a seventh terminal, connected to transceiver filter 64.

[0071] In such a connection structure, switch 52 can, for example, connect either terminal 522 or 523 to terminal 521 based on a control signal from RFIC3. Switch 52 is, for example, constructed from an SPDT (Single-Pole Double-Throw) type switch circuit.

[0072] Switch 53 has terminals 531 to 535. Terminal 531 is connected to the transmitting filter 63T. Terminal 532 is connected to the receiving filter 63R. Terminal 533 is connected to the transceiver filter 64. Terminal 534 is connected to the power amplifier 13. Terminal 535 is connected to the low-noise amplifier 23.

[0073] In this connection structure, switch 53 connects at least one of terminals 531 to 533 to terminal 534 or 535 based on a control signal from RFIC3. For example, when transmitting and receiving high-frequency signals in communication band C, switch 53 connects terminal 531 to terminal 534 and terminal 532 to terminal 535. This enables FDD in communication band C. As another example, when transmitting and receiving high-frequency signals in communication band D, switch 53 switches terminals 534 and 535 to terminal 533. This enables TDD in communication band D. Switch 53 is, for example, configured as a multi-connection type switch circuit.

[0074] Matching circuit 71 is connected between antenna connection terminal 100 and duplexer 63 and transceiver filter 64. Specifically, matching circuit 71 is connected between terminal 514 of switch 51 and terminal 521 of switch 52. Matching circuit 71 can achieve impedance matching with respect to the input impedance of both duplexer 63 and transceiver filter 64.

[0075] in addition, Figure 1 Some of the circuit elements represented may not be included in the high-frequency circuit 1. For example, the high-frequency circuit 1 only needs to have switches 51 and 52, and may not have other circuit elements.

[0076] Furthermore, the number of duplexers and filters connected to switches 51 and 52 is not limited to [specific number]. Figure 1 The number of [bands]. For example, a filter with a passband that includes other communication bands (e.g., Band 32 and / or Band 40 for LTE) can also be further connected to switch 51.

[0077] [1.2 Effects, etc.]

[0078] As described above, the high-frequency circuit 1 according to this embodiment includes: a switch 51 having a terminal 511 connected to the antenna connection terminal 100, and terminals 512 to 514; a duplexer 61 connected to terminal 512, having a passband including communication band A; a duplexer 62 connected to terminal 513, having a passband including communication band B capable of communicating simultaneously with communication band A; a switch 52 having a terminal 521 connected to terminal 514, and terminals 522 and 523; a duplexer 63 connected to terminal 522, having a passband including communication band C; and a transceiver filter 64 connected to terminal 523, having a passband including communication band D.

[0079] Therefore, terminal 521 of switch 52 can be connected to terminal 514 of switch 51, wherein switch 52 connects two filters (duplexer 63 and transceiver filter 64). Thus, when simultaneous communication is performed using communication bands A and B without using communication bands C and D, the number of non-connected terminals in switch 51 can be reduced. As a result, during simultaneous communication in communication bands A and B, the parasitic capacitance (hereinafter referred to as the turn-off capacitance) of the non-connected terminals of switch 51 can be reduced, and the increase in reflection coefficient caused by impedance mismatch can be suppressed, thereby improving the pass-through characteristics of switch 51. Therefore, high-frequency circuit 1 can improve the signal quality during simultaneous communication in communication bands A and B.

[0080] Here, refer to Figure 2 as well as Figure 3 The reduction in the number of non-connecting terminals of switch 51 is explained in detail. Figure 2 This is a circuit diagram illustrating an example of the connection state of the high-frequency circuit 1 according to Embodiment 1. Furthermore, Figure 3 This is a circuit diagram illustrating an example of the connection state of the high-frequency circuit 1X involved in the comparative example. Figure 2 as well as Figure 3 In the diagram, dashed arrows are used to represent the flow of signals in a state where communication can occur simultaneously in communication bands A and B.

[0081] In the case of simultaneous communication in communication bands A and B in the high-frequency circuit 1 according to this embodiment, for example, RFIC3 such as Figure 2As shown, (a) switch 51 connects terminals 512 and 513 to terminal 511, and switches 51 do not connect terminal 514 to terminal 511; (b) switch 52 disconnects terminals 522 and 523 from terminal 521. Thus, the transmit signal of communication band A is transmitted from RFIC3 to antenna 2 via high-frequency input terminal 111, power amplifier 11, transmit filter 61T, switch 51, and antenna connection terminal 100. Furthermore, the receive signal of communication band A is transmitted from antenna 2 to RFIC3 via antenna connection terminal 100, switch 51, receive filter 61R, low-noise amplifier 21, and high-frequency output terminal 121. Furthermore, the transmit signal of communication band B is transmitted from RFIC3 to antenna 2 via high-frequency input terminal 112, power amplifier 12, transmit filter 62T, switch 51, and antenna connection terminal 100. In addition, the received signal of communication band B is transmitted from antenna 2 to RFIC3 via antenna connection terminal 100, switch 51, receiving filter 62R, low noise amplifier 22 and high frequency output terminal 122.

[0082] On the other hand, in the high-frequency circuit 1X included in the communication device 5X involved in the comparative example, such as Figure 3 As shown, switch 52 is absent, and the filters for communication frequency bands A to D are independently connected to the terminals of switch 51X. Specifically, duplexer 61 is connected to terminal 512X of switch 51X, duplexer 62 is connected to terminal 513X of switch 51X, duplexer 63 is connected to terminal 514X of switch 51X via matching circuit 71X, and transceiver filter 64 is connected to terminal 515X of switch 51X via matching circuit 72X.

[0083] In the case of simultaneous communication in communication bands A and B in such a high-frequency circuit 1X, for example, RFIC3... Figure 3As shown, switch 51X connects terminals 512X and 513X to terminal 511X, while preventing terminals 514X and 515X from connecting to terminal 511X. Thus, the transmit signal for communication band A is transmitted from RFIC3 to antenna 2 via high-frequency input terminal 111, power amplifier 11, transmit filter 61T, switch 51X, and antenna connection terminal 100. Similarly, the receive signal for communication band A is transmitted from antenna 2 to RFIC3 via antenna connection terminal 100, switch 51X, receive filter 61R, low-noise amplifier 21, and high-frequency output terminal 121. Furthermore, the transmit signal for communication band B is transmitted from RFIC3 to antenna 2 via high-frequency input terminal 112, power amplifier 12, transmit filter 62T, switch 51X, and antenna connection terminal 100. In addition, the received signal of communication band B is transmitted from antenna 2 to RFIC3 via antenna connection terminal 100, switch 51X, receiving filter 62R, low noise amplifier 22 and high frequency output terminal 122.

[0084] according to Figure 2 as well as Figure 3 It is clear that in simultaneous communication in communication bands A and B, the number of non-connection terminals of switch 51X in the high-frequency circuit 1X involved in the comparative example is two (terminals 513X and 514X). In contrast, the number of non-connection terminals of switch 51X in the high-frequency circuit 1 involved in this embodiment is reduced to one (terminal 513). Therefore, in this embodiment, in simultaneous communication in communication bands A and B, compared with the comparative example, the switching off capacitance of the switch can be reduced to improve the switching pass characteristics, and the signal quality in simultaneous communication in communication bands A and B can be improved.

[0085] For example, in the high-frequency circuit 1 of this embodiment, the communication frequency bands C and D may at least partially overlap.

[0086] Therefore, communication bands C and D, which are essentially combinations of communication bands that do not communicate simultaneously, can be connected to switch 52, and communication bands A and B, which can communicate simultaneously, can be connected to switch 51. Thus, the turn-off capacitance of switch 51 during simultaneous communication of communication bands A and B can be effectively reduced, and signal quality can be improved more effectively.

[0087] For example, the high-frequency circuit 1 according to this embodiment may also include a matching circuit 71 connected between the terminal 514 of switch 51 and the terminal 521 of switch 52.

[0088] Therefore, the input impedance of the duplexer 63 and the transceiver filter 64 for at least partially overlapping communication frequency bands C and D can be impedance matched by a matching circuit 71. Thus, the matching circuit (e.g., connected independently of the duplexer 63 and the transceiver filter 64) can be used to achieve impedance matching. Figure 3 Compared to the cases of matching circuits 71X and 72X, the number of matching circuits can be reduced.

[0089] For example, in the high-frequency circuit 1 of this embodiment, the communication frequency band A can also be a communication frequency band that can communicate simultaneously with the communication frequency band C.

[0090] Thus, communication bands A and C can communicate simultaneously. Therefore, by connecting terminals 512 and 514 to terminal 511 in switch 51 and connecting terminal 522 of switch 52 to terminal 521, simultaneous communication of communication bands A and C can be achieved.

[0091] For example, in the high-frequency circuit 1 of this embodiment, the communication frequency band A can also be a communication frequency band that can communicate simultaneously with the communication frequency band D.

[0092] Thus, communication bands A and D can communicate simultaneously. Therefore, by connecting terminals 512 and 514 to terminal 511 in switch 51 and connecting terminal 523 of switch 52 to terminal 521, simultaneous communication of communication bands A and D can be achieved.

[0093] For example, in the high-frequency circuit 1 involved in this embodiment, the communication frequency band A can also be Band1 for LTE or n1 for 5GNR, the communication frequency band B can also be Band3 for LTE or n3 for 5GNR, the communication frequency band C can also be Band7 for LTE or n7 for 5GNR, and the communication frequency band D can also be Band41 for LTE or n41 for 5GNR.

[0094] Therefore, in the high-frequency circuit 1 that can transmit signals of Band1 for LTE or n1 for 5GNR, signals of Band3 for LTE or n3 for 5GNR, signals of Band7 for LTE or n7 for 5GNR, and signals of Band41 for LTE or n41 for 5GNR, the signal quality during simultaneous communication of Band1 or n1 and Band3 or n3 can be improved.

[0095] Furthermore, the high-frequency circuit 1 according to this embodiment includes: a switch 51 having a terminal 511 connected to the antenna connection terminal 100, and having terminals 512 to 514 that can be connected to the terminal 511, and at least terminals 512 and 513 can be connected to the terminal 511 simultaneously; and a switch 52 having a terminal 521 connected to the terminal 514, and having terminals 522 and 523 that can be connected to the terminal 521.

[0096] Therefore, terminal 521 of switch 52 can be connected to terminal 514 of switch 51, wherein switch 52 can connect to two filters (e.g., duplexer 63 and transceiver filter 64). Thus, when terminals 512 and 513 of switch 51 are simultaneously connected to terminal 511, the number of non-connected terminals of switch 51 can be reduced. As a result, the turn-off capacitance of switch 51 can be reduced, and the increase in reflection coefficient due to impedance mismatch can be suppressed, thereby improving the pass-through characteristics of switch 51.

[0097] Furthermore, the communication device 5 according to this embodiment includes an RFIC3 for processing high-frequency signals and a high-frequency circuit 1 for transmitting high-frequency signals between the RFIC3 and the antenna 2.

[0098] Therefore, the same effect as the high-frequency circuit 1 can be achieved in the communication device 5.

[0099] Furthermore, although the communication device 5 according to this embodiment is capable of both transmitting and receiving, it may also be capable of only transmitting or receiving. In this case, the high-frequency circuit 1 may not include either a power amplifier or a low-noise amplifier, or either a transmitting filter or a receiving filter.

[0100] (Implementation Method 2)

[0101] Next, Embodiment 2 will be described. In this embodiment, the high-frequency module 1A will be described as an example of the installation of the high-frequency circuit 1 according to Embodiment 1.

[0102] [2.1 Component Configuration of High-Frequency Module 1A]

[0103] Figure 4 This is a top view of the high-frequency module 1A according to embodiment 2. (See attached image.) Figure 4 As shown, in the high-frequency module 1A, a portion of the circuit components constituting the high-frequency circuit 1 according to Embodiment 1 are mounted on one side of the module substrate 91A. Specifically, as... Figure 4 As shown, the module substrate 91A is provided with switches 51 and 52, transmitting filters 61T, 62T and 63T, receiving filters 61R, 62R and 63R, transceiver filter 64 and matching circuit 71.

[0104] As the module substrate 91A, for example, a low-temperature co-fired ceramic (LTCC) substrate, a high-temperature co-fired ceramic (HTCC) substrate, a component-embedded substrate, a substrate with a redistribution layer (RDL), or a printed substrate can be used, but it is not limited to these.

[0105] Switches 51 and 52 are, for example, embedded in semiconductor components. A semiconductor component is an electronic component having electronic circuitry formed on and inside a semiconductor chip (also called a die), and is also known as a semiconductor integrated circuit. Semiconductor components are, for example, made of CMOS (Complementary Metal Oxide Semiconductor), specifically, they can be made using SO1 (Silicon on Insulator) technology. This allows for the inexpensive manufacture of semiconductor components. Alternatively, semiconductor components can also be made of at least one of GaAs, SiGe, and GaN. This enables the realization of high-quality semiconductor components.

[0106] Furthermore, switches 51 and 52 can also be integrated into a single semiconductor component. This allows for the miniaturization of the high-frequency module 1A.

[0107] The transmitting filters 61T, 62T and 63T, the receiving filters 61R, 62R and 63R and the transceiver filter 64 may be, for example, any of the following: surface acoustic wave filter, elastic wave filter using BAW (Bulk Acoustic Wave), LC resonant filter and dielectric filter, and are not limited to these.

[0108] The matching circuit 71, for example, includes an inductor and / or a capacitor, and is constructed from a surface mount device (SMD). Alternatively, the matching circuit 71 may be formed within the module substrate 91A, or it may be constructed from an integrated passive device (IPD).

[0109] like Figure 4As shown, transmit filters 61T and 62T and receive filters 61R and 62R are configured near switch 51, while transmit filter 63T, receive filter 63R, and transmit / receive filter 64 are configured near switch 52. That is, transmit filter 63T, receive filter 63R, and transmit / receive filter 64 are configured closer to switch 52 than switch 51.

[0110] [2.2 Effects, etc.]

[0111] As described above, in the high-frequency module 1A of this embodiment, the transmitting filters 61T and 62T and the receiving filters 61R and 62R are arranged near the switch 51, and the transmitting filter 63T, the receiving filter 63R and the transceiver filter 64 are arranged near the switch 52.

[0112] This can shorten the length of the wiring connecting each filter and switch, reduce mismatch losses caused by wiring loss and wiring deviation, and improve the electrical characteristics of the high-frequency module 1A (e.g., noise figure (NF), gain characteristics, etc.).

[0113] (Implementation Method 3)

[0114] Next, Embodiment 3 will be described. In this embodiment, the high-frequency module 1B will be described as an example of the installation of the high-frequency circuit according to Embodiment 1. In addition, the main difference between this embodiment and Embodiment 2 is that circuit components are arranged on both sides of the module substrate. Hereinafter, this embodiment will be described focusing on the differences from Embodiment 2.

[0115] [3.1 Component Configuration of High-Frequency Module 1B]

[0116] Figure 5 This is a top view of the high-frequency module 1B according to embodiment 3. Figure 5 In the diagram, (a) shows a view of the main surface 91a of the module substrate 91B viewed from the z-axis positive side, and (b) shows a view of the main surface 91b of the module substrate 91B viewed from the z-axis positive side. Figure 5 In (a), the dashed lines represent the circuit components on the main surface 91b side of the module substrate 91B. Figure 6 This is a cross-sectional view of the high-frequency module 1B according to embodiment 3. Figure 6 The cross-section of the high-frequency module 1B in the middle is Figure 5 The cross-section at line iv-iv.

[0117] like Figure 5 as well as Figure 6As shown, the high-frequency module 1B replaces the module substrate 91A and includes a module substrate 91B. Furthermore, the high-frequency module 1B includes resin members 94 and 95, a shielding electrode layer 96, and a plurality of pillar-shaped electrodes 150. Additionally, in... Figure 5 The description of resin components 94 and 95 and shielding electrode layer 96 is omitted.

[0118] The module substrate 91B has main surfaces 91a and 91b facing each other. A ground electrode pattern 92 and a via conductor 93 are formed in the module substrate 91B. As the module substrate 91B, similar to the module substrate 91A, for example, an LTCC substrate, an HTCC substrate, a component-integrated substrate, a substrate with an RDL, or a printed substrate can be used, but it is not limited to these.

[0119] Principal face 91a is an example of the first principal face, sometimes referred to as the upper surface or surface. (See also:) Figure 5 As shown in (a), on the main surface 91a are arranged transmitting filters 61T, 62T and 63T, receiving filters 61R, 62R and 63R, transceiver filter 64, matching circuit 71 and resin component 94.

[0120] The resin component 94 covers the circuit components on the main surface 91a and has the function of ensuring the reliability of the circuit components, such as mechanical strength and moisture resistance.

[0121] Main face 91b is an example of the second main face, sometimes referred to as the lower surface or back face. (See example...) Figure 5 As shown in (b), switches 51 and 52, resin component 95 and multiple columnar electrodes 150 are arranged on the main surface 91b.

[0122] The resin component 95 covers the circuit components on the main surface 91b and has the function of ensuring the reliability of the circuit components, such as mechanical strength and moisture resistance.

[0123] Multiple columnar electrodes 150 constitute multiple external connection terminals, including antenna connection terminals 100, high-frequency input terminals 111-113, and high-frequency output terminals 121-123. Each of the multiple columnar electrodes 150 extends vertically from the main surface 91b and penetrates the resin member 95, with one end protruding from the resin member 95. One end of the multiple columnar electrodes 150 protruding from the resin member 95 is connected to input / output terminals and / or ground electrodes, etc., disposed on the mother substrate in the negative z-axis direction of the high-frequency module 1B.

[0124] The shielding electrode layer 96 is formed, for example, by sputtering a thin metal film, covering the upper and side surfaces of the resin component 94 and the side surfaces of the module substrate 91B and the resin component 95. The shielding electrode layer 96 is set to a ground potential to suppress external noise from intruding into the circuit components contained in the high-frequency module 1B.

[0125] like Figure 5 As shown in (a), in a top view of the module substrate 91B, switch 52 overlaps with transmit filter 63T, receive filter 63R, and transceiver filter 64, respectively. Furthermore, as... Figure 6 As shown, switch 52 is connected to transmit filter 63T and transmit / receive filter 64 via via conductor 93 formed in module substrate 91B. Similarly, switch 52 is connected to receive filter 63R via via conductor (not shown) formed in module substrate 91B.

[0126] Furthermore, in a top view of the module substrate 91B, switch 51 overlaps with transmitting filters 61T and 62T and receiving filters 61R and 62R, respectively. Switch 51 is connected to transmitting filters 61T and 62T via via conductors 93 formed in the module substrate 91B. Similarly, switch 52 is connected to receiving filters 61R and 62R via via conductors (not shown) formed in the module substrate 91B.

[0127] The via conductor 93 is a conductor that fills a through-hole that extends along the z-axis through the module substrate 91B. However, the via conductor 93 is not limited to conductors filling through-holes. For example, the via conductor 93 may also be composed of a conductor filling a blind-via formed on the main surface 91a, a conductor filling a blind-via formed on the main surface 91b, and a planar electrode pattern within the module substrate 91B that connects conductors filling two blind-vias.

[0128] [3.2 Effects, etc.]

[0129] As described above, the high-frequency module 1B according to this embodiment includes: a switch 51 having a terminal 511 connected to the antenna connection terminal 100, and terminals 512 to 514; a duplexer 61 connected to terminal 512, having a passband including communication frequency band A; a duplexer 62 connected to terminal 513, having a passband including communication frequency band B capable of simultaneously communicating with communication frequency band A; a switch 52 having a terminal 521 connected to terminal 514, and terminals 522 and 523; and a duplexer 63. A transceiver filter 64 is connected to terminal 522 and has a passband including communication frequency band C; a transceiver filter 64 is connected to terminal 523 and has a passband including communication frequency band D; and a module substrate 91B has opposing main surfaces 91a and 91b, with switch 52 disposed on one of main surfaces 91a and 91b, and duplexer 63 and transceiver filter 64 disposed on the other of main surfaces 91a and 91b. In a top view of module substrate 91B, switch 52 overlaps with duplexer 63 and transceiver filter 64 respectively.

[0130] Therefore, circuit components can be arranged on both sides of the module substrate 91B. This allows for miniaturization of the high-frequency module 1B. Furthermore, the switch 52, duplexer 63, and transceiver filter 64 can be overlapped when viewed from above the module substrate 91B. This shortens the length of the wiring connecting the switch 52, duplexer 63, and transceiver filter 64. As a result, mismatch losses caused by wiring losses and wiring deviations can be reduced, improving the electrical characteristics of the high-frequency module 1B.

[0131] For example, in the high-frequency module 1B of this embodiment, the switch 51 is disposed on one of the main surfaces 91a and 92b, and the duplexers 61 and 62 are disposed on the other of the main surfaces 91a and 92b. When viewed from above the module substrate 91B, the switch 51 and the duplexers 61 and 62 overlap.

[0132] This shortens the length of the wiring connecting switch 51 and duplexers 61 and 62. Consequently, it reduces mismatch losses caused by wiring losses and wiring deviations, thereby improving the electrical characteristics of the high-frequency module 1B.

[0133] For example, the high-frequency module 1B in this embodiment may also include multiple columnar electrodes 150 as multiple external connection terminals, duplexers 61, 62 and 63 and transceiver filter 64 are disposed on main surface 91a, and switches 51 and 52 and multiple columnar electrodes 150 are disposed on main surface 91b.

[0134] Therefore, it is possible to configure components with a relatively low height on the main surface 91b where multiple columnar electrodes 150 are configured, which can help reduce the height of the high-frequency module 1B.

[0135] Furthermore, although switches 51 and 52 are disposed on the same main surface 91b in this embodiment, they can also be disposed on different main surfaces 91a and 91b. For example, switch 51 can be disposed on main surface 91b, and switch 52 can be disposed on main surface 91a. In this case, duplexers 61 and 62 are disposed on main surface 91a, and duplexer 63 and transceiver filter 64 are disposed on main surface 91b. Even in this case, the length of the wiring connecting switches 51 and duplexers 61 and 62, and the length of the wiring connecting switches 52 and duplexer 63 and transceiver filter 64, can be shortened.

[0136] (Implementation Method 4)

[0137] Next, Embodiment 4 will be described. In this embodiment, the high-frequency module 1C will be described as an example of the installation of the high-frequency circuit according to Embodiment 1. In addition, the main difference between this embodiment and Embodiment 3 is the arrangement of the circuit components. Hereinafter, this embodiment will be described focusing on the differences from Embodiment 3.

[0138] [4.1 Component Configuration of High-Frequency Module 1C]

[0139] Figure 7 This is a top view of the high-frequency module 1C according to embodiment 4. Figure 7 In the diagram, (a) shows a view of the main surface 91a of the module substrate 91B viewed from the z-axis positive side, and (b) shows a view of the main surface 91b of the module substrate 91B viewed from the z-axis positive side. Additionally, in Figure 7 In, with Figure 5 Similarly, descriptions of resin components 94 and 95 and shielding electrode layer 96 are omitted.

[0140] like Figure 7 As shown in (a), transmitting filters 61T and 62T, receiving filters 61R and 62R, matching circuit 71, switch 51, and resin component 94 are arranged on the main surface 91a. That is, switch 51 is arranged on the same surface as transmitting filters 61T and 62T and receiving filters 61R and 62R.

[0141] like Figure 7 As shown in (b), a transmitting filter 63T, a receiving filter 63R, a transceiver filter 64, a switch 52, a resin component 95, and a plurality of columnar electrodes 150 are arranged on the main surface 91b. That is, the switch 52 is arranged on the same surface as the transmitting filter 63T, the receiving filter 63R, and the transceiver filter 64.

[0142] [4.2 Effects, etc.]

[0143] As described above, in the high-frequency module 1C of this embodiment, switch 51 and duplexers 61 and 62 are disposed on main surface 91a, and switch 52, duplexer 63 and transceiver filter 64 are disposed on main surface 91b.

[0144] Therefore, the duplexers 61 and 62 connected to switch 51 can be positioned on the same main surface 91a as switch 51, thereby shortening the length of the wiring connecting switch 51 and duplexers 61 and 62. Similarly, the duplexer 63 and transceiver filter 64 connected to switch 52 can be positioned on the same main surface 91b as switch 52, thereby shortening the length of the wiring connecting switch 52 and duplexer 63 and transceiver filter 64.

[0145] (Other implementation methods)

[0146] The high-frequency module and communication device of the present invention have been described above based on the embodiments, but the high-frequency module and communication device of the present invention are not limited to the above embodiments. Other embodiments implemented by combining any of the constituent elements in the above embodiments, variations obtained by implementing the above embodiments with various modifications that can be conceived by those skilled in the art without departing from the spirit of the present invention, and various devices that incorporate the above high-frequency module and communication device are also included in the present invention.

[0147] For example, in the circuit structure of the high-frequency module and communication device according to the above embodiments, other circuit elements and wiring can be inserted between the circuit elements disclosed in the drawings and the paths connecting the signal paths. For example, impedance matching circuits can be inserted between switch 53 and duplexers 61 and 62 respectively. The impedance matching circuit can be composed of, for example, inductors and / or capacitors.

[0148] Furthermore, although in embodiments 2 to 4 described above, the high-frequency module has multiple columnar electrodes 150 as multiple external connection terminals, it is not limited to this. For example, the high-frequency module may also have multiple bump electrodes instead of multiple columnar electrodes 150.

[0149] Furthermore, although the high-frequency module includes various filters and matching circuits in embodiments 2 to 4 described above, it may not necessarily include them. Additionally, the high-frequency module may also include power amplifiers 11 to 13, low-noise amplifiers 21 to 23, and switch 53. In this case, the configuration of power amplifiers 11 to 13, low-noise amplifiers 21 to 23, and switch 53 is not particularly limited.

[0150] Industrial availability

[0151] As a high-frequency circuit or high-frequency module configured in the front end, this invention can be widely used in communication devices such as portable telephones.

[0152] Explanation of reference numerals in the attached figures

[0153] 1: High-frequency circuits;

[0154] 1A, 1B, 1C: High-frequency modules;

[0155] 2: Antenna;

[0156] 3: RFIC;

[0157] 4: BBIC;

[0158] 5: Communication device;

[0159] 11, 12, 13: Power amplifiers;

[0160] 21, 22, 23: Low-noise amplifiers;

[0161] 51, 52, 53: Switches;

[0162] 61, 62, 63: Duplexer;

[0163] 61R, 62R, 63R: Receiver filters;

[0164] 61T, 62T, 63T: Transmitting filters;

[0165] 64: Transceiver filter;

[0166] 91A, 91B: Module baseboard;

[0167] 91a, 91b: Main face;

[0168] 92: Grounding electrode pattern;

[0169] 93: Via conductor;

[0170] 94, 95: Resin components;

[0171] 96: Shielding electrode layer;

[0172] 100: Antenna connection terminal;

[0173] 111, 112, 113: High-frequency input terminals;

[0174] 121, 122, 123: High-frequency output terminals;

[0175] 150: Columnar electrode.

Claims

1. A high-frequency circuit, comprising: The first switch has a first terminal connected to the antenna connection terminal, and has a second terminal, a third terminal, and a fourth terminal, wherein... The first switch is an antenna switch composed of a multi-connection type switching circuit; The first filter, connected to the second terminal, has a passband that includes the first communication frequency band; The second filter, connected to the third terminal, has a passband that includes a second communication frequency band capable of communicating simultaneously with the first communication frequency band; The second switch has a fifth terminal connected to the fourth terminal, and also has a sixth terminal and a seventh terminal; The third filter, connected to the sixth terminal, has a passband that includes the third communication frequency band; as well as The fourth filter, connected to the seventh terminal, has a passband that includes the fourth communication frequency band. In the case of simultaneous communication in the first communication frequency band and the second communication frequency band, In the first switch, both the second terminal and the third terminal are connected to the first terminal, while the fourth terminal is not connected to the first terminal. In the second switch, neither the sixth terminal nor the seventh terminal is connected to the fifth terminal.

2. The high-frequency circuit according to claim 1, wherein, The third communication frequency band and at least a portion of the fourth communication frequency band overlap.

3. The high-frequency circuit according to claim 2, wherein, It also includes: a matching circuit connected between the fourth terminal of the first switch and the fifth terminal of the second switch.

4. The high-frequency circuit according to any one of claims 1 to 3, wherein, The first communication frequency band is a communication frequency band that can communicate simultaneously with the third communication frequency band.

5. The high-frequency circuit according to claim 4, wherein, The first communication frequency band is a communication frequency band that can communicate simultaneously with the fourth communication frequency band.

6. The high-frequency circuit according to any one of claims 1 to 3, wherein, The first communication frequency band is Band1 used for Long Term Evolution (LTE) or n1 used for 5G New Radio (5GNR).

7. The high-frequency circuit according to any one of claims 1 to 3, wherein, The second communication frequency band is Band3 for LTE or n3 for 5G NR.

8. The high-frequency circuit according to any one of claims 1 to 3, wherein, The third communication frequency band is Band7 for LTE or n7 for 5G NR.

9. The high-frequency circuit according to any one of claims 1 to 3, wherein, The fourth communication frequency band is Band41 for LTE or n41 for 5G NR.

10. A high-frequency circuit, comprising: The first switch has a first terminal connected to an antenna connection terminal, and a second terminal, a third terminal, and a fourth terminal capable of being connected to the first terminal, wherein at least the second terminal and the third terminal can be simultaneously connected to the first terminal. The first switch is an antenna switch composed of a multi-connection type switching circuit; and The second switch has a fifth terminal connected to the fourth terminal, and a sixth terminal and a seventh terminal connected to the fifth terminal. When the second terminal and the third terminal of the first switch are simultaneously connected to the first terminal, In the first switch, the fourth terminal is not connected to the first terminal; In the second switch, neither the sixth terminal nor the seventh terminal is connected to the fifth terminal.

11. A high-frequency module, comprising: The first switch has a first terminal connected to the antenna connection terminal, and has a second terminal, a third terminal and a fourth terminal; The first filter, connected to the second terminal, has a passband that includes the first communication frequency band; The second filter, connected to the third terminal, has a passband that includes a second communication frequency band capable of communicating simultaneously with the first communication frequency band; The second switch has a fifth terminal connected to the fourth terminal, and also has a sixth terminal and a seventh terminal; The third filter, connected to the sixth terminal, has a passband that includes the third communication frequency band; A fourth filter, connected to the seventh terminal, has a passband that includes the fourth communication frequency band; and The module substrate has a first main surface and a second main surface that are opposite each other. The second switch is disposed on one of the first main surface and the second main surface. The third filter and the fourth filter are configured on the other of the first main surface and the second main surface. Viewed from above on the module substrate, the second switch, the third filter, and the fourth filter overlap.

12. The high-frequency module according to claim 11, wherein, The first switch is disposed on one of the first main surface and the second main surface. The first filter and the second filter are configured on one of the first main surface and the second main surface. Viewed from above on the module substrate, the first switch, the first filter, and the second filter overlap.

13. The high-frequency module according to claim 12, wherein, It also has multiple external connection terminals. The first filter, the second filter, the third filter, and the fourth filter are disposed on the first main surface. The first switch, the second switch, and the plurality of external connection terminals are disposed on the second main surface.

14. A communication device comprising: Signal processing circuitry processes high-frequency signals; and The high-frequency circuit according to any one of claims 1 to 10 or the high-frequency module according to any one of claims 11 to 13 transmits the high-frequency signal between the signal processing circuit and the antenna.

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