Image sensors and electronic devices

Abstract

The present application discloses an image sensor and an electronic device, belonging to the field of image processing technology. The image sensor includes: a pixel optical layer, a pixel circuit stack layer and a logic processing stack layer, as well as an optical module and a rolling shutter module arranged in the pixel optical layer, a global shutter module arranged in the pixel circuit stack layer and a pixel signal processing module arranged in the logic processing stack layer; wherein the optical module is used to convert light into electric charge; the rolling shutter module is connected to the optical module, used to buffer the electric charge converted by the optical module, and convert the electric charge into a voltage signal and transmit it to the pixel signal processing module for signal processing; the global shutter module is connected to the rolling shutter module or the optical module, and transmits the voltage signal converted from the electric charge to the pixel signal processing module for signal processing.

Description

Technical Field

[0001] The present application belongs to the field of image processing technology, and specifically relates to an image sensor and an electronic device. Background Art

[0002] In a complementary metal-oxide semiconductor (CMOS image sensor, CIS), there are two pixel exposure modes: rolling shutter and global shutter. Global shutter pixels are divided into charge domain global shutter and voltage domain global shutter.

[0003] In related technologies, rolling shutter is widely used in CIS. However, due to the time difference between the exposure of pixel rows, a jelly / distortion effect will be produced for high-speed moving objects in the output image, resulting in poor shooting effect. Due to its own structure, the charge domain global shutter will lead to high parasitic light sensitivity and easily cause light crosstalk, so it has high design requirements. Due to its own structure, the voltage domain global shutter is difficult to eliminate the noise contained in the buffered read voltage signal, resulting in large read noise. Summary of the invention

[0004] The embodiments of the present application provide an image sensor and an electronic device, which can solve the problem in the prior art that the CIS has poor shooting effect regardless of whether it adopts a rolling shutter or a global shutter.

[0005] In a first aspect, an embodiment of the present application provides an image sensor, comprising: a pixel optical layer, a pixel circuit stack layer, and a logic processing stack layer, as well as an optical module and a rolling shutter module arranged in the pixel optical layer, a global shutter module arranged in the pixel circuit stack layer, and a pixel signal processing module arranged in the logic processing stack layer;

[0006] Among them, the optical module is used to convert light into electric charge; the rolling shutter module is connected to the optical module, used to buffer the electric charge converted by the optical module, and convert the electric charge into a voltage signal and transmit it to the pixel signal processing module for signal processing; the global shutter module is connected to the rolling shutter module or the optical module, and transmits the voltage signal converted from the electric charge to the pixel signal processing module for signal processing.

[0007] In a second aspect, an embodiment of the present application provides an electronic device, comprising the image sensor described in the first aspect.

[0008] In the embodiment of the present application, an image sensor is disclosed, which includes a pixel optical layer, a pixel circuit stack layer and a logic processing stack layer, as well as an optical module and a rolling shutter module arranged in the pixel optical layer, a global shutter module arranged in the pixel circuit stack layer and a pixel signal processing module arranged in the logic processing stack layer, wherein the optical module is used to convert light into electric charge, the rolling shutter module is connected to the optical module, used to cache the electric charge converted by the optical module, and convert the electric charge into a voltage signal and transmit it to the pixel signal processing module for signal processing, and the global shutter module is connected to the rolling shutter module or the optical module, and transmits the voltage signal converted by the electric charge to the pixel signal processing module for signal processing. In the embodiment of the present application, the rolling shutter module and the global shutter module are distributed on different layers instead of all being arranged on the same layer, so that the rolling shutter module and the global shutter module can output signals independently or jointly. Since the rolling shutter module and the global shutter module are distributed on different layers, they are all independently routed, so they can not interfere with each other, and can also reduce the parasitic light sensitivity and improve the shooting effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 is a structural block diagram of an image sensor provided by an embodiment of the present application;

[0010] Figure 2 is a circuit diagram of an image sensor provided by an embodiment of the present application;

[0011] Figure 3 is another circuit schematic diagram of an image sensor provided by an embodiment of the present application;

[0012] Figure 4 This is a circuit diagram of an optical module provided by an embodiment of the present application.

[0013] in,

[0014] 10-pixel optical layer; 110-optical module; 111-optical unit; 120-rolling shutter module;

[0015] 20-pixel circuit stack layer; 210-global shutter module; 211-voltage domain global shutter module; 212-charge domain global shutter module;

[0016] 30-Logical processing stack layer;

[0017] 410 - first bond link; 420 - second bond link; 430 - third bond link. DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of the present application to clearly describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments in the present application belong to the scope of protection of this application.

[0019] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0020] The following is combined with Figure 1-4 , an image sensor and an electronic device provided in an embodiment of the present application are described in detail through specific embodiments and their application scenarios.

[0021] like Figure 1 As shown, it is an image sensor provided by an embodiment of the present application. Figure 1 As shown, the image sensor includes: a pixel optical layer 10, a pixel circuit stack layer 20 and a logic processing stack layer 30, as well as an optical module 110 and a rolling shutter module 120 arranged in the pixel optical layer 10, a global shutter module 210 arranged in the pixel circuit stack layer 20, and a pixel signal processing module arranged in the logic processing stack layer 30;

[0022] Among them, the optical module 110 is used to convert light into electric charges; the rolling shutter module 120 is connected to the optical module 110, and is used to buffer the electric charges converted by the optical module 110, and convert the electric charges into voltage signals and transmit them to the pixel signal processing module for signal processing; the global shutter module 210 is connected to the rolling shutter module 120 or the optical module 110, and transmits the voltage signals converted from the electric charges to the pixel signal processing module for signal processing.

[0023] In an embodiment of the present application, the image sensor includes a pixel optical layer 10, a pixel circuit stack layer 20 and a logic processing stack layer 30, as well as an optical module 110 and a rolling shutter module 120 arranged in the pixel optical layer 10, a global shutter module 210 arranged in the pixel circuit stack layer 20 and a pixel signal processing module arranged in the logic processing stack layer 30, wherein the optical module 110 is used to convert light into electric charges, the rolling shutter module 120 is connected to the optical module 110, and is used to cache the electric charges converted by the optical module 110, and convert the electric charges into voltage signals and transmit them to the pixel signal processing module for signal processing, and the global shutter module 210 is connected to the rolling shutter module 120 or the optical module 110, and transmits the voltage signals converted from the electric charges to the pixel signal processing module for signal processing. In the embodiment of the present application, the rolling shutter module 120 and the global shutter module 210 are distributed on different layers, rather than all being arranged on the same layer, so that the rolling shutter module 120 and the global shutter module 210 can output signals independently or together. Since the rolling shutter module 120 and the global shutter module 210 are distributed on different layers and are independently routed, they can avoid interfering with each other, and can also reduce parasitic light sensitivity and improve shooting effects. Moreover, the rolling shutter module 120 and the global shutter module 210 are arranged on different layers, which can reduce the area of ​​a single pixel, and the number of pixels that can be placed in a limited area can be increased, thereby improving resolution.

[0024] The global shutter module 210 may include a voltage domain global shutter module 211 and a charge domain global shutter module 212. Since the voltage domain global shutter module 211 receives a voltage signal, it needs to be connected in series after the rolling shutter module 120, while the charge domain global shutter module 212 receives an electric charge, so it needs to be connected in parallel with the rolling shutter module 120 and be arranged after the optical module 110, which will be described in detail in subsequent embodiments.

[0025] like Figure 2 As shown, in a possible implementation of the present application, the global shutter module 210 is a voltage domain global shutter module 211, and the image sensor includes a plurality of voltage domain global shutter modules 211 distributed in an array, and the output end of each row or column of the voltage domain global shutter module 211 is connected to the pixel signal processing module.

[0026] In the embodiment of the present application, a plurality of voltage domain global shutter modules 211 distributed in an array are arranged on the pixel circuit stack layer 20, and the output end of each row or column of the voltage domain global shutter module 211 is connected to the pixel signal processing module arranged in the logic processing stack layer 30. In other words, the shared wires of the output signals of the voltage domain global shutter module 211 are row-parallel or column-parallel.

[0027] That is to say, the image sensor can be formed in series, that is, the voltage domain global shutter module 211 is connected in series at the rear end of the rolling shutter module 120. Since the rolling shutter circuit module outputs a voltage signal, only a voltage domain global shutter structure can be used for series connection to reduce parasitic light sensitivity (PLS) and avoid optical crosstalk.

[0028] For the connection between different layers, bonding links may be used, such as metal bonding direct bonding links (Direct Bonding Interconnect, DBI) or through silicon vias (Trans-Silicon Via, TSV) for connection.

[0029] In a specific implementation of the present application, the output end of each row or column of the voltage domain global shutter module 211 transmits signals to the pixel signal processing module via the first bonding link 410 .

[0030] In a possible implementation of the present application, the image sensor includes multiple optical modules 110 and multiple rolling shutter modules 120, each optical module 110 is connected in series with a rolling shutter module 120, and the multiple optical modules 110 and rolling shutter modules 120 connected in series are distributed in an array, and the output ends of the optical modules 110 and rolling shutter modules 120 connected in series in each row or column are connected to the pixel signal processing module, and each rolling shutter module 120 is connected in series with the corresponding voltage domain global shutter module 211.

[0031] That is to say, the optical module 110 and the rolling shutter module 120 are on the same layer, and the optical module 110 and the rolling shutter module 120 are connected in series. The image sensor includes a plurality of the above-mentioned series-connected wholes distributed in an array, and the output end of each row or column of the series-connected whole is connected to the pixel signal processing module provided in the logic processing stack layer 30. In other words, the shared wires for the output signal of the rolling shutter module 120 are row-parallel or column-parallel. The wiring of the voltage domain global shutter module 211 is independent and does not interfere with each other. Since only the optical module 110 and the rolling shutter module 120 are provided on the pixel optical layer 10, the area of ​​a single pixel is small, and the number of pixels that can be placed in a limited area can be increased, thereby improving the resolution.

[0032] For the connection between different layers, bonding links can be used, such as metal bonding DBI, or TSV.

[0033] In a specific embodiment of the present application, the output ends of the optical modules 110 and rolling shutter modules 120 connected in series in each row or column transmit signals to the pixel signal processing module through the second bonding link 420; each rolling shutter module 120 is connected to the voltage domain global shutter module 211 through the third bonding link 430.

[0034] In a specific embodiment of the present application, the voltage domain global shutter module 211 may include: a first switch, a voltage domain capacitor, a first modulation switch, a first modulation capacitor, a first source follower and a first signal switch; the first end of the first switch is connected to the rolling shutter module 120, the second end of the first switch is respectively connected to the first end of the voltage domain capacitor and the first end of the first modulation capacitor, the second end of the voltage domain capacitor is grounded, the second end of the first modulation capacitor is respectively connected to the first end of the first modulation switch and the input end of the first source follower, the second end of the first modulation switch is respectively connected to the power supply terminal and the first output end of the first source follower, the second output end of the first source follower is connected to the first end of the first signal switch, and the second end of the first signal switch is used to output a pixel signal.

[0035] Correspondingly, the connection method between the voltage domain global shutter module 211 and the rolling shutter module 120 is as follows: the rolling shutter module 120 includes: a first floating diffusion capacitor, a first reset switch, a second source follower and a second signal switch; the first end of the first floating diffusion capacitor is respectively connected to the optical module 110, the first end of the first reset switch and the input end of the second source follower, the second end of the first floating diffusion capacitor is grounded, the second end of the first reset switch is respectively connected to the power supply terminal and the first output end of the second source follower; the second output end of the second source follower is respectively connected to the first end of the second signal switch and the first end of the first switch, and the second end of the second signal switch is used to output a pixel signal.

[0036] like Figure 2As shown, the optical module 110 in each pixel circuit may include an optical unit 111, and the rolling shutter may adopt a traditional 4T-APS (4-Transistor Active Pixel Sensor, 4T active pixel sensor) circuit, which is composed of: the fourth switch TX switching transistor of the optical module 110 is responsible for the switch of the charge transfer link between the photodiode (Photodiode, PD) and the first floating diffusion capacitor FD; the first reset switch FD_RST transistor is responsible for resetting (Reset) FD and participating in the realization of the double correlated sampling (Correlated Double Sampling, CDS) noise reduction function; the second source follower RS_SF is the source follower transistor of the rolling shutter module 120, which is responsible for amplifying and reading the converted voltage signal in the FD; the second signal switch RS_SEL switching transistor is responsible for transmitting the rolling shutter pixel signal RS_OUT to the outside of the pixel for back-end processing. Between RS_SF and RS_SEL is the access point of the voltage domain global shutter module 211. The rolling shutter pixel signal enters the voltage domain capacitor GS_CAP through the first switch GS_TX switch transistor for caching, and the first modulation switch CAL transistor and the first modulation capacitor CAL_CAP capacitor can modulate the cache voltage. The first source follower GS_SF is the source follower transistor of the voltage domain global shutter module 211, which is responsible for amplifying and reading the voltage signal cached in GS_CAP. The first signal switch GS_SEL switch transistor is responsible for transmitting the global shutter pixel signal GS_OUT to the outside of the pixel for back-end processing. It is worth noting that all transistors in the pixel circuit provided in the embodiment of the present application have the function of turning on or off, and can all be NMOS (N-type metal-oxide-semiconductor, N-type oxide semiconductor) transistors to reduce the circuit wiring area of ​​the pixel.

[0037] The embodiments of the present application may use a high-resolution CIS with pixel synthesis, such as Figure 3 As shown, a possible implementation method is adopted, which adopts a circuit structure of 4-in-1 pixel synthesis hybrid pixel. Since the optical module 110 includes 4 optical units 111, each optical unit 111 includes an independent PD and its corresponding TX switch transistor, each optical unit 111 will be uniformly connected in parallel to the FD of the rolling shutter module 120. In the pixel exposure stage, the PDs in all optical units 111 are exposed to generate charges. In the reading stage, the charges in the PD are transferred to the FD by opening the TX switch, and the TX switches of the 4 optical units 111 can be closed, partially opened, or fully opened, which is determined according to the actual situation and is not limited in the embodiment of the present application.

[0038] The embodiment of the present application adopts the form of connecting the rolling shutter module 120 and the voltage domain global shutter module 211 in series to form an image sensor, such as Figure 2 As shown, it is an M×N pixel array, the optical module 110 and the rolling shutter module 120 in each pixel are placed on the pixel optical layer 10, and the voltage domain global shutter module 211 is placed separately on the pixel circuit stack layer 20. The two are connected by bonding links between layers, which can be connected to GS_CAP and CAL_CAP before entering the voltage domain global shutter module 211, that is, before the GS_TX switch transistor, or in the voltage domain global shutter module 211, that is, after the GS_TX switch transistor. The signal output by the rolling shutter module 120 of each pixel in each column reaches the signal processing module on the bottom logic processing stack layer 30 through the shared wire and the second bonding link 420 for subsequent processing. The signal output by the global shutter module 210 of each pixel in each column reaches the signal processing module on the bottom logic processing stack layer 30 through the shared wire and the first bonding link 410 for subsequent processing.

[0039] It is worth noting that the shared wires of the pixel array can be either row-parallel or column-parallel. Figure 1 In the embodiment, the shared wires for outputting signals of the rolling shutter module 120 are arranged in parallel columns, while the shared wires for outputting signals of the global shutter module 210 are arranged in parallel rows. The signal routing of the rolling shutter module 120 and the signal routing of the voltage domain global shutter module 211 can be made independent of each other and do not interfere with each other.

[0040] like Figure 4 As shown, in a possible implementation of the present application, the global shutter module 210 is a charge domain global shutter module 212, and the image sensor includes a plurality of charge domain global shutter modules 212 distributed in an array, and the output end of each row or column of the charge domain global shutter module 212 is connected to the pixel signal processing module.

[0041] In the embodiment of the present application, a plurality of charge domain global shutter modules 212 are arranged in an array on the pixel circuit stack layer 20, and the output end of each row or column of the charge domain global shutter module 212 is connected to the pixel signal processing module. In other words, the shared wires of the output signals of the charge domain global shutter module 212 are row-parallel or column-parallel.

[0042] That is to say, the image sensor may be formed in a parallel manner, that is, the charge domain global shutter module 212 and the rolling shutter module 120 are connected in parallel.

[0043] For the connection between different layers, bonding links can be used, such as metal bonding DBI, or TSV.

[0044] In a specific implementation of the present application, the output end of each row or column of the charge domain global shutter module 212 transmits signals to the pixel signal processing module via the first bonding link 410 .

[0045] In a possible implementation of the present application, the image sensor includes multiple optical modules 110 and multiple rolling shutter modules 120, each optical module 110 is connected in series with a rolling shutter module 120, and the multiple optical modules 110 and rolling shutter modules 120 connected in series are distributed in an array, and the output ends of the optical modules 110 and rolling shutter modules 120 connected in series in each row or column are connected to the pixel signal processing module, and each rolling shutter module 120 is connected in parallel with the corresponding charge domain global shutter module 212.

[0046] That is to say, the optical module 110 and the rolling shutter module 120 are on the same layer, and the optical module 110 and the rolling shutter module 120 are connected in series. The image sensor includes a plurality of the above-mentioned series-connected wholes distributed in an array, and the output end of each row or column of the series-connected whole is connected to the pixel signal processing module disposed in the logic processing stack layer 30. That is, the shared wires for the output signal of the rolling shutter module 120 are row-parallel or column-parallel. The routing of the charge domain shutter module is independent and does not interfere with each other. Since only the optical module 110 and the rolling shutter module 120 are disposed on the pixel optical layer 10, the area of ​​a single pixel is small, and the number of pixels that can be placed in a limited area can be increased, thereby improving the resolution.

[0047] For the connection between different layers, bonding links can be used, such as metal bonding DBI, or TSV.

[0048] In a specific embodiment of the present application, the output ends of the optical modules 110 and rolling shutter modules 120 connected in series in each row or column transmit signals to the pixel signal processing module through the second bonding link 420; each charge domain global shutter module 212 is connected to the optical module 110 through the third bonding link 430.

[0049] In a specific embodiment of the present application, the charge domain global shutter module 212 includes: a second switch, a charge domain capacitor, a third switch, a second floating diffusion capacitor, a second reset switch, a third source follower and a third signal switch; the first end of the second switch is respectively connected to the optical module 110 and the rolling shutter module 120, the second end of the second switch is respectively connected to the first end of the charge domain capacitor and the first end of the third switch, the second end of the charge domain capacitor is grounded, the second end of the third switch is respectively connected to the first end of the second floating diffusion capacitor, the first end of the second reset switch and the input end of the third source follower, the second end of the second floating diffusion capacitor is grounded, the second end of the second reset switch is respectively connected to the power supply terminal and the first output end of the third source follower, the second output end of the third source follower is connected to the first end of the third signal switch, and the second end of the third signal switch is used to output a pixel signal.

[0050] Correspondingly, the connection method between the voltage domain global shutter module 211 and the rolling shutter module 120 is as follows: the rolling shutter module 120 includes: a third floating diffusion capacitor, a third reset switch, a fourth source follower and a fourth signal switch; the first end of the third floating diffusion capacitor is respectively connected to the optical module 110, the first end of the third reset switch, the input end of the fourth source follower and the first end of the second switch, the second end of the third floating diffusion capacitor is grounded, the second end of the third reset switch is respectively connected to the power terminal and the first output end of the fourth source follower, the second end of the fourth source follower is connected to the first end of the fourth signal switch, and the second end of the fourth signal switch is used to output a pixel signal.

[0051] like Figure 4 As shown, the optical module 110 in each pixel circuit may include an optical unit 111, and the rolling shutter module 120 circuit still adopts a 4T-APS structure. Since the charge domain global shutter module 212 is a parallel structure, its access point is changed to the third floating diffusion capacitor FD, the third reset switch FD_RST, the fourth source follower RS_SF, and the fourth switch TX transistor. Since this position is the FD charge buffer interval and has not yet been converted into a voltage signal, only the charge domain global shutter circuit design can be adopted. After passing through the second switch GS_TX switching transistor, the charge is directly cached to the charge domain capacitor GS_CAP. When reading, the charge cached in GS_CAP passes through the third switch GS_TX2 switching transistor to the second floating diffusion capacitor GS_FD of a 4T-APS circuit, and is converted into a voltage signal through the third source follower GS_SF and then outputs the GS_OUT signal through the third signal switch GS_SEL switching transistor. Like FD_RST, the function of the second reset switch GS_RST is to reset the GS_CAP and GS_FD capacitors and participate in the realization of the CDS function. The embodiments of the present application may use a high-resolution CIS with pixel synthesis, such as Figure 3As shown, a possible implementation method is adopted, which adopts a circuit structure of 4-in-1 pixel synthesis hybrid pixel. Since the optical module 110 includes 4 optical units 111, each optical unit 111 includes an independent PD and its corresponding TX switch transistor, each optical unit 111 will be uniformly connected in parallel to the FD of the rolling shutter module 120. In the pixel exposure stage, the PDs in all optical units 111 are exposed to generate charges. In the reading stage, the charges in the PD are transferred to the FD by opening the TX switch, and the TX switches of the 4 optical units 111 can be closed, partially opened, or fully opened, which is determined according to the actual situation and is not limited in the embodiment of the present application.

[0052] The embodiment of the present application adopts the form of connecting the rolling shutter module 120 and the charge domain global shutter module 212 in parallel to form an image sensor. Figure 4 As shown, it is an M×N pixel array, the optical module 110 and the rolling shutter module 120 in each pixel are placed on the pixel optical layer 10, and the charge domain global shutter module 212 is placed separately on the pixel circuit stack layer 20. The two are connected by bonding between layers. According to the characteristics of the charge domain global shutter module 212, the third bonding link 430 must be placed before entering the charge domain global shutter module 212, that is, before the GS_TX switch transistor, to ensure the independence and integrity of the charge storage capacitor GS_CAP. The signal output by the rolling shutter module 120 of each pixel in each column reaches the signal processing module on the bottom logic processing stack layer 30 through the shared wire via the second bonding link 420 for subsequent processing. The signal output by the charge domain global shutter module 212 of each pixel in each column reaches the signal processing module on the bottom logic processing stack layer 30 through the shared wire via the first bonding link 410 for subsequent processing.

[0053] It is worth noting that the shared wires of the pixel array can be arranged in parallel in rows or columns. Figure 4 In the example, the shared wires for the output signals of the rolling shutter module 120 of the pixel are arranged in row parallel, while the shared wires for the output signals of the charge domain global shutter module 212 are arranged in column parallel. This allows the signal routing of the rolling shutter module 120 and the signal routing of the charge domain global shutter module 212 to be independent of each other and not interfere with each other.

[0054] It is worth noting that the image sensor pixel circuit in the present application may include a microcontroller.

[0055] The microcontroller can output a control signal to each switching transistor to control the switching transistor to be turned on or off.

[0056] The embodiment of the present application further provides an electronic device, including the image sensor provided by the above embodiment, and can achieve the same technical effect, which will not be described here to avoid repetition.

[0057] It should be noted that, in this article, the terms "comprise", "include" or any other variant thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise one..." do not exclude the presence of other identical elements in the process, method, article or device including the element. In addition, it should be pointed out that the scope of the methods and devices in the embodiments of the present application is not limited to performing functions in the order shown or discussed, and may also include performing functions in a substantially simultaneous manner or in reverse order according to the functions involved, for example, the described method may be performed in an order different from that described, and various steps may also be added, omitted, or combined. In addition, the features described with reference to certain examples may be combined in other examples.

[0058] Through the description of the above implementation methods, those skilled in the art can clearly understand that the above-mentioned embodiment methods can be implemented by means of software plus a necessary general hardware platform, and of course by hardware, but in many cases the former is a better implementation method. Based on such an understanding, the technical solution of the present application, or the part that contributes to the prior art, can be embodied in the form of a software product, which is stored in a storage medium (such as ROM / RAM, a magnetic disk, or an optical disk), and includes a number of instructions for a terminal (which can be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.) to execute the methods described in each embodiment of the present application.

[0059] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. An image sensor, characterized in that: include: A pixel optical layer, a pixel circuit stack layer and a logic processing stack layer, as well as an optical module and a rolling shutter module arranged in the pixel optical layer, a global shutter module arranged in the pixel circuit stack layer and a pixel signal processing module arranged in the logic processing stack layer; Among them, the optical module is used to convert light into electric charge; the rolling shutter module is connected to the optical module, used to buffer the electric charge converted by the optical module, and convert the electric charge into a voltage signal and transmit it to the pixel signal processing module for signal processing; the global shutter module is connected to the rolling shutter module or the optical module, and transmits the voltage signal converted from the electric charge to the pixel signal processing module for signal processing.

2. The image sensor according to claim 1, characterized in that The global shutter module is a voltage domain global shutter module. The image sensor includes a plurality of the voltage domain global shutter modules distributed in an array. The output ends of the voltage domain global shutter modules in each row or column are connected to the pixel signal processing module.

3. The image sensor according to claim 2, characterized in that The output end of each row or column of the voltage domain global shutter module transmits signals to the pixel signal processing module through a first bonding link.

4. The image sensor according to claim 2, characterized in that: The image sensor includes a plurality of optical modules and a plurality of rolling shutter modules, each of the optical modules is connected in series with a rolling shutter module, the plurality of optical modules and rolling shutter modules connected in series are distributed in an array, the output ends of the optical modules and rolling shutter modules connected in series in each row or column are connected to the pixel signal processing module, and each rolling shutter module is connected in series with the corresponding voltage domain global shutter module.

5. The image sensor according to claim 4, characterized in that: The output ends of the optical modules and the rolling shutter modules connected in series in each row or column transmit signals to the pixel signal processing module through a second bonding link; each rolling shutter module is connected to the voltage domain global shutter module through a third bonding link.

6. The image sensor according to claim 1, characterized in that: The global shutter module is a charge domain global shutter module. The image sensor includes a plurality of the charge domain global shutter modules distributed in an array. The output ends of the charge domain global shutter modules in each row or column are connected to the pixel signal processing module.

7. The image sensor according to claim 6, characterized in that: The output end of each row or column of the charge domain global shutter module transmits signals to the pixel signal processing module via a first bonding link.

8. The image sensor according to claim 6, characterized in that The image sensor includes a plurality of optical modules and a plurality of rolling shutter modules, each of the optical modules is connected in series with a rolling shutter module, the plurality of optical modules and rolling shutter modules connected in series are distributed in an array, the output ends of the optical modules and rolling shutter modules connected in series in each row or column are connected to the pixel signal processing module, and each rolling shutter module is connected in parallel with the corresponding charge domain global shutter module.

9. The image sensor according to claim 8, characterized in that: The output ends of the optical modules and rolling shutter modules connected in series in each row or column transmit signals to the pixel signal processing module through a second bonding link; each charge domain global shutter module is connected to the optical module through a third bonding link.

10. An electronic device, characterized in that: Comprising the image sensor as described in any one of claims 1-9.

Images