Method for testing light absorption of semiconductor multilayer film system film-film interface

Abstract

The present application relates to the technical field of semiconductor multilayer film, and provides a testing method for film-film interface light absorption rate of a semiconductor multilayer film system, wherein a reference film and a comparison film are constructed, the thickness of the substrate and the whole of the reference film and the comparison film are completely same, and the only difference between the reference film and the comparison film is the number of interface layers between the high refractive index film and the low refractive index film, and the two have the same optical characteristics at the center wavelength, so that the constructed reference film and comparison film can be used to study the light absorption between the film and the film interface; the film-film interface light absorption of the multilayer film system can be tested by the method, and then the interface absorption loss between the film and the film can be evaluated; the testing method is suitable for the interface light absorption between the films with different refractive indexes, and is also suitable for the interface light absorption between the films with different thicknesses, and has good universality and expansibility.

Description

Technical Field

[0001] This invention relates to the field of semiconductor multilayer film technology, and in particular to a method for testing the light absorption rate of the inter-film interface in a semiconductor multilayer film system. Background Technology

[0002] Since semiconductor manufacturing involves fabricating various microstructures on silicon wafers, in addition to the original silicon-based material, non-silicon materials (such as non-silicon dielectric layers and metal layers) need to be introduced through the deposition of multilayer thin film systems to achieve different functions. Semiconductor thin-film devices typically require the introduction of multiple materials, and the thin-film process also isolates and protects highly reactive materials (such as Si and Cu) from contamination and corrosion. Thin-film processes also perform some photoresist functions, commonly used to create anti-reflective coatings to increase light absorption, hard masks, etc.

[0003] Semiconductor multilayer film deposition refers to the process of depositing various materials on a substrate using physical or chemical methods, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD). Therefore, semiconductor multilayer film systems involve a large number and variety of film layers, placing extremely high demands on the manufacturing process. Among these processes, the optical absorption loss between film layers is one of the key factors affecting semiconductor devices, directly influencing the device's loss magnitude, stability, and lifespan.

[0004] From the perspective of multilayer thin-film device structure, such as Figure 1As shown, optical thin-film elements can be divided into four parts: substrate absorption (a), substrate-film interface absorption (b), thin-film absorption (c), thin-film-interface absorption (d), and thin-film absorption (e). The absorptivity of substrate absorption and thin-film absorption can be obtained through absorption testing. However, thin-film-interface absorption, being present in a multi-layered system, is not independent and is therefore difficult to obtain directly through absorption testing. Nevertheless, the thin-film-interface is often where the electromagnetic field strength is strongest, resulting in the highest absorptivity in the entire element. Therefore, the interface where different thin-film materials overlap is the most likely location for defects, performance distortion, and damage to the thin-film element. Thin-film-interface absorption originates from the alternating layering of film materials during fabrication, leading to a higher impurity concentration at the interface than within the film itself, resulting in an absorption cross-section. Furthermore, during storage and use, the film system adsorbs large amounts of atmospheric impurities and moisture at the air interface. Moisture penetrates deep into the film layers, filling the microscopic pores at each interface. Especially in multilayer film systems, significant thin-film-to-thin-film interface absorption exists, thus requiring close attention to the inter-film interface absorption characteristics. Absorption loss not only directly affects the performance of multilayer film devices, but more importantly, the temperature rise caused by the absorption of light sources by the thin film and the accompanying thermal stress effects are significant reasons for the performance degradation or damage of semiconductor thin film devices. Especially in multilayer film systems with strong electromagnetic fields, there are multiple thin-film-to-thin-film absorptions; therefore, even very weak absorptions are sufficient to reduce or even destroy the performance of thin-film elements, severely impacting their performance. However, currently, no publicly available technology tests and evaluates the interfacial light absorption loss between thin films in semiconductor multilayer film systems.

[0005] Therefore, a reasonable assessment of the interfacial light absorption loss between thin films in a semiconductor multilayer system plays an important role in the development of high-performance, high-stability semiconductor thin-film devices. Summary of the Invention

[0006] In view of the shortcomings of the existing technology, the purpose of this invention is to provide a method for testing the light absorption rate of the inter-film interface in a semiconductor multilayer film system, so as to evaluate the inter-film absorption loss in the multilayer film system.

[0007] In a first aspect, the present invention provides a method for testing the light absorption rate at the inter-film interface of a semiconductor multilayer film system, comprising the following steps:

[0008] A reference film is constructed, the reference film comprising: a first substrate and a first high-refractive-index film and a first low-refractive-index film superimposed on the first substrate;

[0009] A contrast film is constructed, the contrast film comprising: a second substrate and a plurality of second high-refractive-index films and second low-refractive-index films arranged alternately on the second substrate;

[0010] The first high-refractive-index film and the second high-refractive-index film are made of the same material; the first low-refractive-index film and the second low-refractive-index film are made of the same material.

[0011] The first substrate and the second substrate have the same thickness and are made of the same material.

[0012] The thickness of the first high-refractive-index film is equal to the sum of the thicknesses of the plurality of second high-refractive-index films;

[0013] The thickness of the first low-refractive-index film is equal to the sum of the thicknesses of the plurality of second low-refractive-index films;

[0014] The light absorption rate of the reference film at the center wavelength was tested;

[0015] The light absorption rate of the comparison film at the center wavelength was tested;

[0016] The difference in light absorption rate is obtained by subtracting the light absorption rate of the reference film from the light absorption rate of the comparison film.

[0017] The difference in the number of interface layers is obtained by subtracting the number of interface layers between the first high-refractive-index film and the first low-refractive-index film in the reference film from the number of interface layers between the second high-refractive-index film and the second low-refractive-index film in the comparison film.

[0018] Dividing the difference in light absorption rate by the difference in the number of interface layers yields the light absorption rate at the membrane-membrane interface.

[0019] Preferably, in the method for testing the light absorption rate at the inter-film interface of the semiconductor multilayer film system, the thickness of the second high refractive index film is half the optical thickness of the second high refractive index film.

[0020] Preferably, in the method for testing the light absorption rate at the inter-film interface of the semiconductor multilayer film system, the thickness of the second low-refractive-index film is half the optical thickness of the second low-refractive-index film.

[0021] Preferably, in the method for testing the light absorption rate at the inter-film interface of the semiconductor multilayer film system, the materials used for the first high refractive index film and the second high refractive index film include any one of Ta2O5, Ti3O5, TiO2, and ZnS.

[0022] Preferably, in the method for testing the light absorption rate at the inter-film interface of the semiconductor multilayer film system, the materials used for the first low-refractive-index thin film and the second low-refractive-index thin film include any one of SiO2, Al2O3, and MgF2.

[0023] Preferably, in the method for testing the light absorption rate at the inter-film interface of the semiconductor multilayer film system, the material used for the first high refractive index film and the second high refractive index film is TiO2, and the refractive index of the first high refractive index film and the second high refractive index film is 2.53.

[0024] Preferably, in the method for testing the light absorption rate at the inter-film interface of the semiconductor multilayer film system, the materials used for the first low-refractive-index film and the second low-refractive-index film are SiO2, and the refractive index of the first low-refractive-index film and the second low-refractive-index film is 1.48.

[0025] Preferably, in the method for testing the light absorption rate at the inter-film interface of the semiconductor multilayer film system, the thicknesses of the first substrate and the second substrate are the same, as are the materials used.

[0026] Preferably, in the method for testing the light absorption rate at the inter-film interface of the semiconductor multilayer film system, both the first substrate and the second substrate are transparent substrates.

[0027] Preferably, in the method for testing the light absorption rate of the inter-film interface of the semiconductor multilayer film system, the materials used for the first substrate and the second substrate include any one of 7980 glass, K9 glass, calcium fluoride glass, and fused silica.

[0028] The method for testing the light absorption rate at the inter-film interface of a semiconductor multilayer film system according to the present invention has the following advantages over the prior art:

[0029] The present invention provides a method for testing the interfacial light absorption rate of semiconductor multilayer film systems. By constructing a reference film and a comparison film, both films have identical substrates and overall thicknesses. The only difference lies in the number of interfacial layers between the high-refractive-index and low-refractive-index films. Both films possess the same optical properties, thus the constructed reference and comparison films can be used to study light absorption at the film-to-film interface. After testing the light absorption rate of the reference and comparison films at the center wavelength, the difference in light absorption rate is calculated. Dividing this difference by the difference in the number of interfacial layers yields the interfacial light absorption rate. This method can test the interfacial light absorption of multilayer film systems, thereby evaluating the interfacial absorption loss between films. The testing method is applicable to interfacial light absorption between films with different refractive indices and thicknesses, exhibiting good versatility and scalability. This invention provides a new testing approach for obtaining interfacial light absorption between films directly through absorption testing, a method not readily available in existing technologies. Attached Figure Description

[0030] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0031] Figure 1 This is a schematic diagram of optical absorption in existing optical thin-film elements;

[0032] Figure 2 This is a schematic flowchart of the method for testing the light absorption rate at the inter-film interface of the semiconductor multilayer film system according to the present invention.

[0033] Figure 3 This is a schematic diagram of the structure of a reference membrane in one embodiment of the present invention;

[0034] Figure 4 This is a schematic diagram of the structure of the comparative membrane in one embodiment of the present invention;

[0035] Figure 5 This is a schematic diagram of the structure of the reference membrane and the comparison membrane in Embodiment 1 of the present invention. Detailed Implementation

[0036] The technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0037] This application provides a method for testing the light absorption rate at the inter-film interface of a semiconductor multilayer film system, such as... Figure 2 As shown, it includes the following steps:

[0038] S1. Construct a reference film, the reference film comprising: a first substrate and a first high-refractive-index thin film and a first low-refractive-index thin film superimposed on the first substrate;

[0039] S2. Construct a contrast film, which includes: a second substrate and a plurality of second high-refractive-index thin films and second low-refractive-index thin films arranged alternately on the second substrate;

[0040] The first high-refractive-index film and the second high-refractive-index film are made of the same material; the first low-refractive-index film and the second low-refractive-index film are made of the same material.

[0041] The first and second substrates have the same thickness and are made of the same materials.

[0042] The thickness of the first high-refractive-index film is equal to the sum of the thicknesses of the multiple second high-refractive-index films;

[0043] The thickness of the first low-refractive-index film is equal to the sum of the thicknesses of the multiple second low-refractive-index films;

[0044] S3. Test the light absorption rate of the reference film at the center wavelength;

[0045] S4. Test the light absorption rate of the comparison film at the center wavelength;

[0046] S5. Subtract the light absorption rate of the reference film from the light absorption rate of the comparison film to obtain the light absorption rate difference;

[0047] S6. Subtract the number of interface layers between the first high-refractive-index film and the first low-refractive-index film in the reference film from the number of interface layers between the second high-refractive-index film and the second low-refractive-index film in the comparison film to obtain the difference in the number of interface layers.

[0048] S7. Divide the difference in light absorption rate by the difference in the number of interface layers to obtain the light absorption rate at the membrane-membrane interface.

[0049] It should be noted that the method for testing the light absorption rate at the inter-film interface of a semiconductor multilayer film system provided in this application first constructs a reference film and a control film, respectively. Figures 3-4As shown, the reference film includes a first substrate 10 and a first high-refractive-index film 11 and a first low-refractive-index film 12 superimposed on the first substrate 10. The first high-refractive-index film 11 and the first low-refractive-index film 12 are deposited on the first substrate 10 by methods such as physical vapor deposition (PVD), chemical deposition (CVD), and atomic layer deposition (ALD). The comparison film includes a second substrate 20 and a plurality of second high-refractive-index films 21 and second low-refractive-index films 22 arranged alternately on the second substrate 20. The second high-refractive-index films 21 and second low-refractive-index films 22 are deposited on the second substrate 20 by methods such as physical vapor deposition (PVD), chemical deposition (CVD), and atomic layer deposition (ALD). Specifically, the number of layers of the second high-refractive-index films 21 and second low-refractive-index films 22 arranged alternately on the second substrate 20 is determined according to the actual situation, such as 2, 3, 4, 5, 6, 7, 8, 9, 10...n layers (n is a positive integer). The first high-refractive-index film 11 and the second high-refractive-index film 21 are made of the same material, the first low-refractive-index film 12 and the second low-refractive-index film 22 are made of the same material, and the thickness of the first substrate 10 and the second substrate 20 and the materials used are the same. The thickness of the first high-refractive-index film 11 is equal to the sum of the thicknesses of the multiple second high-refractive-index films 21, and the thickness of the first low-refractive-index film 12 is equal to the sum of the thicknesses of the multiple second low-refractive-index films 22. To further illustrate, the number of layers of the interleaved second high-refractive-index films 21 and second low-refractive-index films 22 in the comparison film is 4. The sum of the thicknesses of the 4 second high-refractive-index films 21 in the comparison film is equal to the thickness of the first high-refractive-index film 11 in the reference film, and the sum of the thicknesses of the 4 second low-refractive-index films 22 in the comparison film is equal to the thickness of the first low-refractive-index film 12 in the reference film.The reference and comparison films have identical substrates and overall thicknesses. The only difference lies in the number of interface layers between the high-refractive-index and low-refractive-index films. In the reference film, there is one interface layer between the high-refractive-index and low-refractive-index films. In the comparison film, the number of interface layers is determined by the number of interleaved layers between the second high-refractive-index film 21 and the second low-refractive-index film 22. For example, when there are two interleaved layers, the number of interface layers is three; when there are three interleaved layers, the number is five; when there are four interleaved layers, the number is seven; and when there are n interleaved layers, the number is 2n-1. The reference and comparison films constructed above are identical except for the number of interface layers between the high-refractive-index and low-refractive-index films. Since both the reference and control films share the same optical properties, they can be used to study light absorption at the thin film-to-thin film interface. By testing the light absorption rates of the reference and control films at the center wavelength, it can be understood that the difference in light absorption rates between the reference and control films at the center wavelength is due to the different number of interface layers between the high-refractive-index and low-refractive-index films in the two films. The number of high-refractive-index and low-refractive-index film interface layers in the control film is 2n-1, while the number of high-refractive-index and low-refractive-index film interface layers in the reference film is 1. The number of high-refractive-index and low-refractive-index film interface layers in the control film is 2n-2 more than that in the reference film. It is precisely because the number of high-refractive-index and low-refractive-index film interface layers in the control film is greater than that in the reference film that the light absorption rates of the reference and control films at the center wavelength differ. Therefore, after obtaining the light absorption rates of the reference and control films at the center wavelength, the light absorption rate of the inter-film interface in the semiconductor multilayer film system can be obtained based on the number of film interface layers. Furthermore, if the light absorption rate of the reference film at the center wavelength is A1 and the light absorption rate of the contrast film at the center wavelength is A2, then the difference in light absorption rates between the reference film and the contrast film is ΔA = A2 - A1. Since the number of interfacial layers between the high-refractive-index film and the low-refractive-index film in the contrast film is 2n-2 more than the number of interfacial layers in the reference film, the average value of the difference in light absorption rates between a single high-refractive-index film and a low-refractive-index film in the contrast film is A. j =ΔA / (2n-2), through A j This allows us to determine the light absorption between high-refractive-index films and low-refractive-index films; it is understandable that, for example, A... j If A is very small (close to 0), there is almost no light absorption between the high-refractive-index film and the low-refractive-index film. j If the value is large, there will be significant light absorption between high-refractive-index thin films and low-refractive-index thin films.

[0050] Specifically, in some embodiments, conventional methods such as photothermal radiation technology, laser calorimetry technology, surface thermal lensing technology, and photoacoustic spectroscopy are used to test the light absorption rate of the reference film and the comparison film at the center wavelength. Here, the light absorption rate refers to the light absorption rate of the entire reference film and the comparison film.

[0051] In some embodiments, the thickness of the second high refractive index film is half the wavelength of the second high refractive index film.

[0052] In some embodiments, the thickness of the second low-refractive-index film is half the wavelength of the second low-refractive-index film.

[0053] Specifically, in the above embodiments, the thickness of the second high-refractive-index film in the comparison film is half the wavelength of the second high-refractive-index film, and the thickness of the second low-refractive-index film is half the wavelength of the second low-refractive-index film. Let H represent the second high-refractive-index film and L represent the second low-refractive-index film. Then, the film system constructed in the comparison film is HHLLHHLLHHLL, where HH represents the optical thickness of the second high-refractive-index film being half the wavelength, and LL represents the optical thickness of the second low-refractive-index film being half the wavelength (H and L represent the thicknesses of the second high-refractive-index film and the second low-refractive-index film, respectively, being 1 / 4 wavelength). That is, the second high-refractive-index film and the second low-refractive-index film constructed in the comparison film are half-wave dummy layers. A dummy layer is essentially no coating at the center wavelength. The concept of a dummy layer is clearly described in the prior art and will not be repeated here. By introducing the dummy layer, the comparison film and the reference film have the same optical properties at the center wavelength.

[0054] Specifically, the sum of the thicknesses of the multiple second high-refractive-index films and multiple second low-refractive-index films in the comparison film is n×1 / 2×λ1 + n×1 / 2×λ2 (where λ1 is the wavelength of the second high-refractive-index film and λ2 is the wavelength of the second low-refractive-index film). The thickness of the first high-refractive-index film in the reference film is n×1 / 2×λ1, and the thickness of the first low-refractive-index film is n×1 / 2×λ2. Therefore, the sum of the optical thicknesses of the high-refractive-index films and low-refractive-index films on the substrates of the comparison film and the reference film is equal.

[0055] The test method of this application is applicable to the interfacial light absorption between thin films with different refractive indices, as well as between thin films with different thicknesses, and has good versatility and scalability.

[0056] Specifically, if the number of alternating layers of the second high-refractive-index film 21 and the second low-refractive-index film 22 in the comparison film is 2, then the film system on the second substrate in the comparison film is represented as A / HHLLHHLL, and correspondingly, the film system on the first substrate in the reference film is represented as A / HHHHLLLL. In this embodiment, H represents the first (second) high-refractive-index film, L represents the first (second) low-refractive-index film, and A represents Air, indicating the air outside the film.

[0057] In some embodiments, the materials used for the first high refractive index film and the second high refractive index film include any one of Ta2O5, Ti3O5, TiO2, and ZnS.

[0058] In some embodiments, the materials used for the first low-refractive-index thin film and the second low-refractive-index thin film include any one of SiO2, Al2O3, and MgF2.

[0059] In some embodiments, the first high refractive index film and the second high refractive index film are made of TiO2, and the refractive index of the first high refractive index film and the second high refractive index film is 2.53.

[0060] In some embodiments, the first low-refractive-index film and the second low-refractive-index film are made of SiO2, and the refractive index of the first low-refractive-index film and the second low-refractive-index film is 1.48.

[0061] In some embodiments, the thickness and materials used for the first substrate and the second substrate are the same.

[0062] In some embodiments, both the first substrate and the second substrate are transparent substrates.

[0063] In some embodiments, the materials used for the first substrate and the second substrate include any one of 7980 glass, K9 glass, calcium fluoride glass, and fused silica; the thickness of the first substrate and the second substrate is 2 to 5 mm.

[0064] The following specific embodiments further illustrate the method for testing the light absorption rate at the inter-film interface of the semiconductor multilayer film system of this application. This section further illustrates the content of the present invention in conjunction with specific embodiments, but should not be construed as limiting the present invention. Unless otherwise specified, the technical means used in the embodiments are conventional means well known to those skilled in the art.

[0065] Example 1

[0066] This application provides a method for testing the light absorption rate at the inter-film interface of a semiconductor multilayer film system, comprising the following steps:

[0067] S1. Construct a reference membrane, referencing... Figure 5As shown, the reference film includes: a first substrate 10 and a first high refractive index film 11 and a first low refractive index film 12 superimposed on the first substrate 10;

[0068] S2. Construct a contrast membrane, for reference. Figure 5 As shown, the comparison film includes: a second substrate 20 and a second high refractive index film 21 and a second low refractive index film 22 disposed on the second substrate 20 in a series of alternating arrangements;

[0069] The first high refractive index film 11 and the second high refractive index film 21 are both made of TiO2, and the refractive index of the first high refractive index film 11 and the second high refractive index film 21 is 2.53.

[0070] The first low-refractive-index thin film 12 and the second low-refractive-index thin film 22 are both made of SiO2, and the refractive index of the first low-refractive-index thin film 12 and the second low-refractive-index thin film 22 is 1.48.

[0071] The second high-refractive-index thin film 21 and the second low-refractive-index thin film 22 on the second substrate 20 are interleaved in two layers.

[0072] The thickness of the second high refractive index film 21 is half the wavelength of the second high refractive index film, specifically 70 nm;

[0073] The thickness of the second low-refractive-index film 22 is half the wavelength of the second low-refractive-index film, specifically 120 nm;

[0074] The thickness of the first high-refractive-index thin film 11 is 140 nm;

[0075] The thickness of the first low-refractive-index thin film 12 is 240 nm;

[0076] Both the first and second substrates are made of fused silica, and both have a thickness of 3 mm.

[0077] S3. Test the light absorption rate of the reference film at the center wavelength;

[0078] S4. Test the light absorption rate of the comparison film at the center wavelength;

[0079] S5. Subtract the light absorption rate of the reference film from the light absorption rate of the comparison film to obtain the light absorption rate difference;

[0080] S6. Subtract the number of interface layers between the first high-refractive-index film and the first low-refractive-index film in the reference film from the number of interface layers between the second high-refractive-index film and the second low-refractive-index film in the comparison film to obtain the difference in the number of interface layers.

[0081] S7. Divide the difference in light absorption rate by the difference in the number of interface layers to obtain the light absorption rate at the membrane-membrane interface.

[0082] The reference and control films constructed in the above embodiments have the same optical properties at the center wavelength (λ = 355 nm). The sum of the thicknesses of the first high-refractive-index film and the first low-refractive-index film on the first substrate is 380 nm, and the sum of the thicknesses of the second high-refractive-index film and the second low-refractive-index film interlaced on the second substrate is 70 nm + 120 nm + 70 nm + 120 nm = 380 nm. After testing, at the center wavelength (λ = 355 nm), the light absorption rate A1 of the reference film is... The light absorption rate of the reference film is 0.5%, and the light absorption rate of the control film is 0.9%. The difference in light absorption rates between the reference and control films is ΔA = A2 - A1 = 0.004. The control film has 3 interfacial layers between the high-refractive-index and low-refractive-index films, while the reference film has 1 interfacial layer between them. The control film has 2 more interfacial layers between the high-refractive-index and low-refractive-index films than the reference film. Therefore, the average difference in light absorption rates between a single high-refractive-index and low-refractive-index film layer in the control film is A. j =ΔA / 2=0.2%, through A j A value of 0.2% is sufficient to evaluate the light absorption between high-refractive-index thin films and low-refractive-index thin films.

[0083] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A method for testing the light absorption rate at the inter-film interface of a semiconductor multilayer film system, characterized in that, Includes the following steps: A reference film is constructed, the reference film comprising: a first substrate and a first high-refractive-index film and a first low-refractive-index film superimposed on the first substrate; A contrast film is constructed, the contrast film comprising: a second substrate and a plurality of second high-refractive-index films and second low-refractive-index films arranged alternately on the second substrate; The first high-refractive-index film and the second high-refractive-index film are made of the same material; the first low-refractive-index film and the second low-refractive-index film are made of the same material. The first substrate and the second substrate have the same thickness and are made of the same material. The thickness of the first high-refractive-index film is equal to the sum of the thicknesses of the plurality of second high-refractive-index films; The thickness of the first low-refractive-index film is equal to the sum of the thicknesses of the plurality of second low-refractive-index films; The light absorption rate of the reference film at the center wavelength was tested; The light absorption rate of the comparison film at the center wavelength was tested; The difference in light absorption rate is obtained by subtracting the light absorption rate of the reference film from the light absorption rate of the comparison film. The difference in the number of interface layers is obtained by subtracting the number of interface layers between the first high-refractive-index film and the first low-refractive-index film in the reference film from the number of interface layers between the second high-refractive-index film and the second low-refractive-index film in the comparison film. Dividing the difference in light absorption rate by the difference in the number of interface layers yields the light absorption rate at the membrane-membrane interface. The thickness of the second high refractive index film is half the optical thickness of the second high refractive index film. The thickness of the second low-refractive-index film is half the optical thickness of the second low-refractive-index film.

2. The method for testing the light absorption rate at the inter-film interface of a semiconductor multilayer film system as described in claim 1, characterized in that, The materials used for the first high refractive index film and the second high refractive index film include any one of Ta2O5, Ti3O5, TiO2, and ZnS.

3. The method for testing the light absorption rate at the inter-film interface of a semiconductor multilayer film system as described in claim 1, characterized in that, The materials used for the first low-refractive-index thin film and the second low-refractive-index thin film include any one of SiO2, Al2O3, and MgF2.

4. The method for testing the light absorption rate at the inter-film interface of a semiconductor multilayer film system as described in claim 2, characterized in that, The first high refractive index film and the second high refractive index film are made of TiO2, and the refractive index of the first high refractive index film and the second high refractive index film is 2.

53.

5. The method for testing the light absorption rate at the inter-film interface of a semiconductor multilayer film system as described in claim 3, characterized in that, The first low-refractive-index film and the second low-refractive-index film are made of SiO2, and the refractive index of the first low-refractive-index film and the second low-refractive-index film is 1.

48.

6. The method for testing the light absorption rate at the inter-film interface of a semiconductor multilayer film system as described in claim 1, characterized in that, Both the first substrate and the second substrate are transparent substrates.

7. The method for testing the light absorption rate at the inter-film interface of a semiconductor multilayer film system as described in claim 1, characterized in that, The materials used for the first substrate and the second substrate include any one of 7980 glass, K9 glass, calcium fluoride glass, and fused silica.

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