Signal detection circuit and radio frequency power detection device

Abstract

This application provides a signal detection circuit and a radio frequency (RF) power detection device, comprising: a connection terminal for receiving electrical signals from a circuit under test; a bias module connected to the connection terminal for separating the received electrical signals into a first signal and a second signal, wherein the first signal is an RF signal and the second signal is a low-frequency signal and / or a DC signal; an RF signal detection module connected to the bias module for receiving the first signal and detecting the first signal; and a signal processing module connected to the RF signal detection module and the bias module for receiving the detection results of the RF signal detection module on the first signal and the second signal, and obtaining corresponding first and second detection results after data processing. This expands the detection range, facilitates the analysis of the correlation between changes in low-frequency signals and / or DC signals and changes in RF signals, and facilitates rapid fault location and auxiliary debugging.

Description

Technical Field

[0001] This invention relates to the field of signal detection technology, and in particular to a signal detection circuit and a radio frequency power detection device. Background Technology

[0002] When debugging products such as RF amplifier circuits and RF signal sources, engineers often need to use RF power meters to measure RF power in order to locate fault points. RF power meters are high-performance ultra-high frequency power meters designed for measuring various complex waveforms. In the installation, maintenance, and construction measurement of mobile communication networks, as well as in the development, production, and maintenance of wireless communication equipment, RF power meters are one of the most fundamental test instruments.

[0003] However, RF power meters have a low-frequency lower limit, meaning they cannot detect voltage changes below a certain frequency. This prevents engineers from analyzing the correlation between low-frequency voltage changes and RF power changes on the line, hindering rapid fault location. Summary of the Invention

[0004] In view of this, the present application provides a signal detection circuit and a radio frequency power detection device to solve at least one problem existing in the background art.

[0005] In a first aspect, one embodiment of this application provides a signal detection circuit, including:

[0006] The connection terminal is used to receive electrical signals from the circuit under test.

[0007] A bias module, connected to the connection terminal, is used to separate the received electrical signal into a first signal and a second signal, wherein the first signal is a radio frequency signal and the second signal is a low frequency signal and / or a DC signal;

[0008] A radio frequency signal detection module, connected to the bias module, is used to receive the first signal and detect the first signal;

[0009] The signal processing module, connected to the radio frequency signal detection module and the bias module, is used to receive the detection result of the radio frequency signal detection module on the first signal and the second signal, and obtain the corresponding first detection result and second detection result after data processing.

[0010] In conjunction with the first aspect of this application, in an optional embodiment, the bias module includes a capacitor assembly and a first resistor assembly;

[0011] The capacitor assembly is connected between the connection terminal and the radio frequency signal detection module to block the second signal from flowing to the radio frequency signal detection module;

[0012] The first resistor assembly is connected between the connection terminal and the radio frequency signal detection module, so that the second signal is transmitted to the signal processing module through the first resistor assembly.

[0013] In conjunction with the first aspect of this application, in an optional embodiment, the resistance of the first resistor component is more than ten times the line characteristic impedance of the signal detection circuit.

[0014] In conjunction with the first aspect of this application, in an optional embodiment, the resistance of the first resistor component is greater than or equal to 500 ohms.

[0015] In conjunction with the first aspect of this application, in an optional embodiment, the biasing module further includes a second resistor assembly;

[0016] The second resistor assembly is connected between the first resistor assembly and the ground terminal.

[0017] In conjunction with a first aspect of this application, in an alternative embodiment, the second resistor assembly includes a variable resistor network.

[0018] In conjunction with the first aspect of this application, in an optional embodiment, it further includes an equalizer and / or an attenuator; wherein,

[0019] The equalizer and / or the attenuator are connected to the input of the radio frequency signal detection module so that the first signal flows through the equalizer and / or the attenuator before flowing to the radio frequency signal detection module.

[0020] In conjunction with the first aspect of this application, in an optional embodiment, the signal processing module is further configured to output the first detection result and the second detection result based on the time correlation of the electrical signal transmission.

[0021] In conjunction with the first aspect of this application, in an optional embodiment, the signal processing module includes a first analog-to-digital converter circuit, a second analog-to-digital converter circuit, and a microcontroller, wherein,

[0022] The first analog-to-digital converter circuit is connected to the radio frequency signal detection module and is used to convert the detection result of the radio frequency signal detection module on the first signal into a first digital signal and then transmit it to the microcontroller.

[0023] The second analog-to-digital converter circuit is connected to the bias module and is used to convert the second signal into a second digital signal and then transmit it to the microcontroller.

[0024] The microcontroller is connected to the first analog-to-digital converter circuit and the second analog-to-digital converter circuit, and is used to determine the corresponding first detection result and second detection result based on the first digital signal and the second digital signal, and output the first detection result and the second detection result according to the time correlation of the electrical signal transmission.

[0025] Secondly, one embodiment of this application provides a radio frequency power detection device, including the signal detection circuit described in any one of the first aspects above.

[0026] The signal detection circuit and radio frequency power detection device provided in this application include: a connection terminal for receiving electrical signals from the circuit under test; a bias module connected to the connection terminal for separating the received electrical signals into a first signal and a second signal, wherein the first signal is a radio frequency signal and the second signal is a low-frequency signal and / or a DC signal; a radio frequency signal detection module connected to the bias module for receiving the first signal and detecting the first signal; and a signal processing module connected to the radio frequency signal detection module and the bias module for receiving the detection result of the first signal and the second signal from the radio frequency signal detection module, and obtaining the corresponding first detection result and second detection result after data processing. Thus, the detection frequency can be as low as low-frequency and DC signals, expanding the detection range. Simultaneously acquiring changes in the low-frequency signal and / or DC signal as well as changes in the radio frequency signal facilitates the analysis of their correlation. Simultaneous measurement of the two signals facilitates rapid fault location and auxiliary debugging.

[0027] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0028] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0029] Figure 1 This is a schematic diagram of the structure of a signal detection circuit provided in an embodiment of this application;

[0030] Figure 2 A schematic diagram of the signal detection circuit provided as a specific example of this application;

[0031] Figure 3 This is a schematic diagram of a first exemplary structure for a bias module;

[0032] Figure 4 This is a schematic diagram of a second exemplary structure for the bias module;

[0033] Figure 5 This is a schematic diagram of a third exemplary structure for the bias module;

[0034] Figure 6 This is a schematic diagram of a fourth exemplary structure for the bias module. Detailed Implementation

[0035] To make the technical solutions and beneficial effects of the present invention more apparent and understandable, the technical solutions in the embodiments of this application are clearly and completely described below by listing specific examples. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0037] It is understood that the terms “first,” “second,” etc., as used herein may be used to describe various elements, but these elements are not limited by these terms. These terms are used only to distinguish one element from another. For example, without departing from the scope of this application, a first resistor may be referred to as a second resistor, and similarly, a second resistor may be referred to as a first resistor. Both the first resistor and the second resistor are resistors, but they are not the same resistor. When “first” is described, it does not imply the necessary presence of a “second”; and when “second” is discussed, it does not imply the necessary presence of a first element, component, region, layer, or portion. As used herein, the singular forms “a,” “an,” and “the” may also be intended to include the plural forms unless the context clearly indicates otherwise. “A plurality” means two or more, unless otherwise explicitly specified. It should also be understood that the term “comprising,” when used in this specification, identifies the presence of the stated feature but does not exclude the presence or addition of one or more other features. As used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0038] It is understood that in the context of this application, "connection" means that there is an electrical signal or data transmission between the connected end and the connected end, which can be understood as "electrical connection", "communication connection", etc. In the context of this application, "A and B are directly connected" means that there are no other components between A and B except for wires.

[0039] This application provides a signal detection circuit. Figure 1A schematic diagram of the signal detection circuit is shown. As shown, the signal detection circuit includes: a connection terminal for receiving electrical signals from the circuit under test; a bias module connected to the connection terminal for separating the received electrical signals into a first signal and a second signal, wherein the first signal is a radio frequency (RF) signal and the second signal is a low-frequency signal and / or a DC signal; an RF signal detection module connected to the bias module for receiving the first signal and detecting it; and a signal processing module connected to the RF signal detection module and the bias module for receiving the detection results of the first signal and the second signal from the RF signal detection module, and obtaining the corresponding first and second detection results after data processing.

[0040] Furthermore, detecting the first signal can specifically involve detecting the radio frequency (RF) power; while receiving the second signal can specifically involve detecting its voltage. Related technologies cannot simultaneously monitor the DC bias voltage on the RF cable or circuit. One possible approach is to measure the RF power first and then the bias voltage. However, during debugging, if it is necessary to quickly determine the fault location, it is still necessary to measure multiple parameters simultaneously. If changes in low-frequency voltage on the line are not measured simultaneously with changes in RF power, it becomes difficult to troubleshoot the correlation between the two.

[0041] The signal detection circuit provided in this application, by setting a bias module, separates the low-frequency signal and / or DC signal from the radio frequency signal in the received electrical signal. This not only obtains the detection result for the radio frequency signal, but also detects the low-frequency signal and / or DC signal. Thus, the detection frequency can be as low as the low-frequency and DC signal, and the detection range is expanded. Simultaneously collecting changes in the low-frequency signal and / or DC signal as well as changes in the radio frequency signal is beneficial for analyzing the correlation between them. By simultaneously measuring the above two signals, it is beneficial for quickly locating faults and assisting in debugging.

[0042] In the signal detection circuit provided in this application embodiment, each module is located in the same instrument, such as in an RF power detection device, thereby providing more measurement methods in one instrument and reducing the user's operating costs.

[0043] The radio frequency (RF) power detection device can be one of the following: a probe-type RF power detection device, a modular RF power detection device, or a handheld RF power detection device. A probe-type RF power detection device includes an RF power probe and a main unit, while a modular RF power detection device is a standalone power measurement module. To facilitate rapid fault location and ease of operation for users, a handheld RF power detection device is chosen as a specific implementation. Handheld RF power detection devices are convenient to use, compact in size, and capable of handling various debugging and fault location tasks.

[0044] In the signal detection circuit provided in this application embodiment, the connection end is used to receive electrical signals from the circuit under test. Specifically, the connection end may include a connector, which is used to connect to an external circuit under test. The connector can simultaneously allow low-frequency signals or DC signals to pass through, and can also allow radio frequency signals to pass through. For industrial applications, N-type connectors can be used; for general users and higher frequency applications, SMA, 3.5mm, 2.92mm, and other general-purpose connectors can be used. N-type connectors are short for Neill connectors; SMA connectors are short for subminiature Class A connectors. Furthermore, the connector does not use a waveguide interface. In practical applications, the connector is, for example, a coaxial connector.

[0045] The electrical signal in the circuit under test enters the signal detection circuit through the connection terminal and flows to the bias module, where it is separated into a first signal and a second signal. The second signal is a low-frequency signal and / or a DC signal; the low-frequency signal can be a low-frequency AC or DC signal, such as an AC signal within several hundred hertz.

[0046] The radio frequency (RF) signal detection module receives and detects the first signal. In practical applications, the RF signal detection module is specifically a detector, which is a device that detects useful information in a wave signal to identify the presence or change of a wave, oscillation, or signal. The detector is used to detect the power of the RF signal (which may be referred to simply as "RF power" in some descriptions below), and it can only detect the power of RF signals above a certain frequency; specifically, this frequency is in the range of 9kHz to 100kHz.

[0047] The signal processing module receives the detection results of the first signal and the second signal from the radio frequency signal detection module, and obtains the corresponding first and second detection results after data processing. As an optional implementation, the signal processing module also outputs the first and second detection results based on the time correlation of the electrical signal transmission, thereby facilitating data processing and analysis by the user.

[0048] Therefore, it can be seen that the signal detection circuit provided in this application embodiment has a simple structure and reliable performance.

[0049] Please refer to Figure 2 The bias module may include a DC blocker. The DC blocker is connected between the connection terminal and the RF signal detection module. The DC blocker allows RF signals to pass through within a certain frequency range, while low-frequency DC signals below a certain frequency cannot pass through the DC blocker, thus preventing them from affecting the RF signal detection module connected to the rear end of the DC blocker. Here, "rear end" refers to the location of the RF signal detection module after the DC blocker, based on the direction of electrical signal flow. Preferably, the DC blocker is a wideband RF capacitor. This RF capacitor has the largest possible capacitance and the highest possible high-frequency performance.

[0050] The bias module also needs to have a section that allows low-frequency signals and / or DC signals to pass through. Figure 2 In the specific example shown, this part is a resistor biaser that uses a resistor as its core component. Thus, after setting up the bias module, the RF impedance on the line is stabilized, preventing RF signals from passing through the resistor biaser.

[0051] In contrast, Figure 3 This is a schematic diagram of a first exemplary structure of a bias module, wherein the bias module includes a capacitor C1 and an inductor L1. The capacitor C1 acts as a DC blocker, blocking low-frequency signals and DC signals while allowing radio frequency signals to pass through; the inductor L1 allows low-frequency signals and / or DC signals to pass through while blocking radio frequency signals. This bias module has low internal resistance and can handle a large current; however, its broadband characteristics are difficult to achieve, and its cost is relatively high.

[0052] It should be noted that when considering how to build the specific structure of the bias module, the inventors noticed the following aspects: First, whether the bias module itself will introduce errors. If it does, it will cause changes in RF power, making it impossible for users to accurately measure RF power using the calibration readings of an RF power meter. Second, whether additional equipment such as multimeters, RF power meters, biasers, and adapter cables are needed to complete the test. If so, the process will be cumbersome and complicated. Third, whether the structure of the part of the bias module that allows low-frequency signals and / or DC signals to pass through can achieve large bandwidth, high flatness, and low frequency. If this is difficult to achieve, it will greatly reduce the application scenarios.

[0053] To avoid the above problems, Figure 2 In the specific example shown, the portion of the bias module that allows low-frequency signals and / or DC signals to pass through employs a resistor biaser. Exemplarily, the bias module includes a capacitor assembly and a first resistor assembly; the capacitor assembly is connected between the connection terminal and the RF signal detection module to block the flow of a second signal to the RF signal detection module; the first resistor assembly is connected between the connection terminal and the RF signal detection module to allow the second signal to pass through the resistor assembly and be transmitted to the signal processing module. It is understood that the capacitor assembly, as an optional DC blocker, blocks the flow of the second signal to the RF signal detection module while allowing the first signal to flow to the RF signal detection module. Furthermore, preferably, it maintains good insertion loss characteristics over a wide bandwidth, minimizing RF signal loss. The first resistor assembly, while allowing the second signal to pass through the first resistor assembly to the signal processing module, prevents the first signal from flowing from the branch containing the first resistor assembly to the signal processing module, thereby reducing RF signal loss.

[0054] Furthermore, the resistance value of the first resistor component is more than ten times the characteristic impedance of the signal detection circuit. Even further, the resistance value of the first resistor component can be tens to hundreds of times the characteristic impedance of the signal detection circuit. The first resistor component and its parasitic impedance determine the port and bandwidth performance of the circuit. Using the resistor biaser in this specific example, good port characteristics and bandwidth performance can be obtained; good port characteristics mean low return loss at the input port, approaching ideal conditions; good bandwidth performance means that the detection of different frequencies and the same power RF signals within the operating frequency band has small errors and small fluctuations. Thus, bandwidth performance can be optimized by reducing parasitic capacitance, inductance, and matching with the circuit pattern. The first resistor component can use at least one of the following: small-package resistors, printed resistors, coaxial thin-film resistors, line impedance adjustment matching, etc.

[0055] As a specific alternative, the resistance of the first resistor component is greater than or equal to 500 ohms. This satisfies the general requirement of a line characteristic impedance of 50 to 100 ohms (especially 50 ohms or 75 ohms). Further alternatively, the resistance of the first resistor component is greater than or equal to 1 kiloohms.

[0056] The bias module uses a resistor biaser, which has the advantages of convenient implementation and excellent performance. The power influence of the resistor biaser itself is very small, which greatly reduces the impact on the detection results of the RF signal detection module. The second signal separated by the bias module is transmitted to the signal processing module to obtain the second detection result. There is no need to use multiple detection devices, the circuit structure is simple, and the electrical signal transmission error is small. By reasonably setting the resistance value of the first resistor component, a large bandwidth, high flatness, and low frequency can be achieved.

[0057] For the specific structure of the bias module, please refer to Figures 4 to 6 .

[0058] First, please refer to Figure 4 .exist Figure 4 In the second exemplary structure of the bias module shown, the bias module includes a capacitor assembly and a first resistor assembly, wherein the capacitor assembly is specifically, for example, a first capacitor C1, and the first resistor assembly is specifically, for example, a first resistor R1. Furthermore, the bias module also includes a second resistor assembly connected between the first resistor assembly and the ground terminal. The second resistor assembly is specifically, for example, a second resistor R2. Thus, by performing voltage division through the second resistor assembly connected to the ground terminal, attenuation of the line DC voltage is achieved. Figure 4 The bias module structure shown uses a low-cost, high-bandwidth resistor network to form the bias voltage measurement circuit.

[0059] In addition, for the first resistor assembly, besides using Figure 4In addition to the first resistor R1 shown, the circuit may include multiple resistors; these resistors can be connected in series, in parallel, or in a series-parallel configuration. The total resistance of the connected resistors forms the resistance of the first resistor assembly. Furthermore, to further adjust the overall circuit performance, capacitors, inductors, and other components can be used in the network formed by the first resistor assembly.

[0060] Figure 5 In the third exemplary structure of the bias module shown, the bias module includes a first-first resistor R11, a second-first resistor R12, and a first inductor L11. The first-first resistor R11, the second-first resistor R12, and the first inductor L11 are connected in series between the connection terminal and the RF signal detection module, and the first inductor L11 is connected between the first-first resistor R11 and the second-first resistor R12. This achieves better circuit performance. The total resistance of the first-first resistor R11 and the second-first resistor R12 connected in series forms the resistance of the first resistor assembly.

[0061] exist Figure 5 In the third exemplary structure of the bias module shown, a second capacitor C2 is connected between the first resistor assembly and the ground terminal to adjust the performance of the circuit.

[0062] Although not shown, the location of the second resistor component may also be that the second resistor component is not present, but rather that the location of the second resistor component is an open circuit, i.e., the resistance is infinite.

[0063] As an optional implementation, the second resistor assembly, in addition to employing Figure 4 In addition to the second resistor R2 shown, multiple resistors may be included; these resistors can be connected in series, in parallel, or in a series-parallel configuration. Furthermore, the second resistor assembly can be a component with a fixed resistance value, thus forming a voltage divider network with the first resistor assembly with a fixed ratio; the second resistor assembly can also include a variable resistor network, such as a resistor network with an adjustable resistance value, thereby enabling the voltage division ratio between the second and first resistor assemblies to be changed while maintaining a constant low-frequency input resistance.

[0064] The embodiments of this application do not specifically limit the resistance value of the second resistor component. In practical applications, a second resistor component with a suitable resistance value can be selected based on the resistance value of the first resistor component and the requirements for the voltage division ratio.

[0065] Please refer to Figure 6 ,exist Figure 6In the fourth exemplary structure of the bias module shown, the second resistor assembly includes a variable resistor network, specifically comprising three variable resistor branches, each having three nodes for connection to the signal processing module (see the first, second, and third nodes in the figure). The variable resistor network includes: a first-second resistor R21 connected between the first resistor assembly and the first node; a second-second resistor R22 connected between the first and second nodes; a third-second resistor R23 connected between the second and third nodes; a fourth-second resistor R24 ​​connected between the first node and ground; a fifth-second resistor R25 connected between the second node and ground; and a sixth-second resistor R24 ​​connected between the third node and ground. Thus, when any one of the first, second, and third nodes is connected to the signal processing module, the variable resistor network provides three different resistance values, thereby enabling switching of ranges based on the DC signal.

[0066] Of course, I can understand. Figure 6 This example only illustrates a variable resistor network with three variable resistor branches. Obviously, a variable resistor network with two or more variable resistor branches can also be provided, i.e., the variable resistor network includes multiple variable resistor branches, thereby providing a variety of resistance values ​​that can be switched.

[0067] Next, please continue to refer to... Figure 2 As an optional implementation, the signal detection circuit may also include an equalizer and / or attenuator; wherein the equalizer and / or attenuator is connected to the input of the RF signal detection module, so that the first signal flows through the equalizer and / or attenuator before flowing to the RF signal detection module. This provides convenience for users, meeting their needs for performing mathematical calculations on power using the signal detection circuit / RF power detection device. For example, when the signal detection circuit includes an attenuator, compensation can be made on the measured digital values; furthermore, when there is a need to obtain the fluctuation of RF power over time, a Fourier transform can be performed. The equalizer and / or attenuator module can optimize RF standing waves and overall power response, providing users with more accurate data and port performance, and adjusting overall performance.

[0068] Optionally, frequency amplitude equalization can be achieved through transmission line losses. The transmission line length is sufficient to achieve a uniform increase in attenuation from low to high frequencies. Transmission line losses arise from radiation losses inherent in the structure itself, losses due to the dielectric material, and losses caused by manufacturing errors and precision requirements. Utilizing the frequency-dependent characteristics of these losses, a uniform increase in attenuation from low to high frequencies can be achieved by adjusting the transmission line length. If the slope of this attenuation increase matches the detection response of the RF signal detection module, a relatively flat response can be achieved, reducing the impact of frequency on accuracy. The transmission line can be an electromagnetic waveguide structure such as a microstrip line, coplanar waveguide, coplanar grounded waveguide, coaxial line, or waveguide cavity.

[0069] Next, please continue to refer to... Figure 2 As an optional implementation, the signal processing module includes a first analog-to-digital converter (ADC), a second ADC, and a microcontroller. The first ADC is connected to the radio frequency (RF) signal detection module and converts the detection result of the RF signal detection module on the first signal into a first digital signal, which is then transmitted to the microcontroller. The second ADC is connected to a bias module and converts the second signal into a second digital signal, which is then transmitted to the microcontroller. The microcontroller is connected to both the first and second ADCs and determines the corresponding first and second detection results based on the first and second digital signals, and outputs the first and second detection results according to the time correlation of the electrical signal transmission.

[0070] In this signal detection circuit, if a low-frequency DC signal (e.g., a DC-9kHz signal) and a radio frequency (RF) signal (e.g., a 9kHz-6GHz signal) are simultaneously present on the line, the low-frequency DC signal can be converted into a digital signal via a resistor biaser and a second analog-to-digital converter circuit. This digital signal then enters the microcontroller, where its waveform and value can be processed and displayed to the user. Simultaneously, the RF signal is converted into a digital signal via the RF signal detection module and a first analog-to-digital converter circuit, before entering the microcontroller for further calculation and processing. The RF power can also be displayed to the user in waveform or numerical form, not just numerically. Thus, users can quickly obtain information about the low-frequency DC signal and RF power with a single connection, a single measurement, and a single screen.

[0071] The microcontroller can perform mathematical calculations (such as addition, subtraction, multiplication, division, and Fourier transform) on the radio frequency power and DC low-frequency signal, record the data, and display the fluctuation of radio frequency power over time. It can also correlate the fluctuation of radio frequency power with the fluctuation of DC low-frequency signal over time and display the result.

[0072] The first analog-to-digital converter (ADC) samples the voltage output from the RF signal detection module and converts it into a digital signal. The microcontroller processes the data based on the correspondence between voltage, frequency, and power to obtain the RF power. Here, the RF power is used as the first detection result. As an optional implementation, the microcontroller determines the corresponding first detection result based on the first digital signal, including obtaining the RF power corresponding to the first digital signal based on a calibration table to determine the first detection result; wherein the calibration table includes the correspondence between voltage and power. As another optional implementation, the microcontroller determines the corresponding first detection result based on the first digital signal, including calculating the RF power based on a formula relating voltage, frequency, and power to determine the first detection result; wherein the first digital signal contains voltage information, and the frequency information of the RF signal can be obtained based on user input.

[0073] Based on this, the present application also provides a radio frequency power detection device, including any of the signal detection circuits in the foregoing embodiments.

[0074] Understandably, the signal detection circuit and RF power detection device provided in this application can measure RF power, measure low-frequency signals and DC signals, and simultaneously measure RF power, low-frequency signals, and DC signals; can switch gears based on DC signals; and can display and process the two signals. Specifically, it can calibrate, compensate, and record the power of the RF signal, calibrate, compensate, and record the low-frequency signals and DC signals, and analyze and display the time correlation between low-frequency, DC, and RF power.

[0075] It should be understood that the above embodiments are exemplary and are not intended to encompass all possible implementations included in the claims. Various modifications and changes can be made to the above embodiments without departing from the scope of this disclosure. Similarly, the various technical features of the above embodiments can be arbitrarily combined to form other embodiments of the present invention that may not be explicitly described. Therefore, the above embodiments only illustrate several implementations of the present invention and do not limit the scope of protection of this patent.

Claims

1. A signal detection circuit, characterized in that, include: The connection terminal is used to receive electrical signals from the circuit under test. A bias module, connected to the connection terminal, is used to separate the received electrical signal into a first signal and a second signal, wherein the first signal is a radio frequency signal and the second signal is a low frequency signal and / or a DC signal; A radio frequency signal detection module, connected to the bias module, is used to receive the first signal and perform radio frequency power detection on the first signal; A signal processing module, connected to the radio frequency signal detection module and the bias module, is used to receive the detection result of the radio frequency signal detection module on the first signal and the second signal, and obtain the corresponding first detection result and second detection result after data processing, and output the first detection result and the second detection result according to the time correlation of the electrical signal transmission. It also includes: a voltage detection circuit, connected between the bias module and the signal processing module, for detecting the voltage of the second signal; the signal processing module receives the second signal specifically by receiving the signal after the second signal flows through the voltage detection circuit.

2. The signal detection circuit according to claim 1, characterized in that, The bias module includes a capacitor assembly and a first resistor assembly; The capacitor assembly is connected between the connection terminal and the radio frequency signal detection module to block the second signal from flowing to the radio frequency signal detection module; The first resistor assembly is connected between the connection terminal and the radio frequency signal detection module, so that the second signal is transmitted to the signal processing module through the first resistor assembly.

3. The signal detection circuit according to claim 2, characterized in that, The resistance of the first resistor component is more than ten times the characteristic impedance of the signal detection circuit.

4. The signal detection circuit according to claim 2, characterized in that, The resistance of the first resistor component is greater than or equal to 500 ohms.

5. The signal detection circuit according to claim 2, characterized in that, The bias module also includes a second resistor assembly; The second resistor assembly is connected between the first resistor assembly and the ground terminal.

6. The signal detection circuit according to claim 5, characterized in that, The second resistor assembly includes a variable resistor network.

7. The signal detection circuit according to claim 1, characterized in that, It also includes equalizers and / or attenuators; among which, The equalizer and / or the attenuator are connected to the input of the radio frequency signal detection module so that the first signal flows through the equalizer and / or the attenuator before flowing to the radio frequency signal detection module.

8. The signal detection circuit according to claim 1, characterized in that, The signal processing module includes a first analog-to-digital converter circuit, a second analog-to-digital converter circuit, and a microcontroller, wherein... The first analog-to-digital converter circuit is connected to the radio frequency signal detection module and is used to convert the detection result of the radio frequency signal detection module on the first signal into a first digital signal and then transmit it to the microcontroller. The second analog-to-digital converter circuit is connected to the bias module and is used to convert the second signal into a second digital signal and then transmit it to the microcontroller. The microcontroller is connected to the first analog-to-digital converter circuit and the second analog-to-digital converter circuit, and is used to determine the corresponding first detection result and second detection result based on the first digital signal and the second digital signal, and output the first detection result and the second detection result according to the time correlation of the electrical signal transmission.

9. A radio frequency power detection device, characterized in that, Includes the signal detection circuit as described in any one of claims 1-8.

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