Magnetic Head and Magnetic Recording Device

Abstract

Provided are a magnetic head and a magnetic recording device capable of achieving an increase in recording density. According to an embodiment, the magnetic head includes a first and a second magnetic pole, and a laminate disposed between the first and second magnetic poles. The laminate includes a first magnetic layer, a second magnetic layer disposed between the first magnetic layer and the second magnetic pole, a first non-magnetic layer disposed between the first magnetic layer and the second magnetic layer, a second non-magnetic layer disposed between the second magnetic layer and the second magnetic pole, and a third non-magnetic layer disposed between the first magnetic pole and the first magnetic layer. The first magnetic layer contains a first element including at least one of Fe, Co, and Ni. The second magnetic layer contains (Fe 100‑x Co x ) 100‑y E y (10 atm% ≤ x ≤ 50 atm%, 10 atm% ≤ y ≤ 90 atm%). The second element E includes at least one selected from the group consisting of Cr, V, Mn, Ti, and Sc. The first magnetic layer does not contain the second element, or the concentration of the second element in the first magnetic layer is lower than the concentration of the second element in the second magnetic layer.

Description

[0001] This application is based on Japanese Patent Application No. 2021-089833 (filing date: May 28, 2021) and claims the benefit of priority therefrom. This application incorporates by reference the entire contents of that application. Technical Field

[0002] Embodiments of the present invention relate to a magnetic head and a magnetic recording device. Background Art

[0003] A magnetic head is used to record information on a magnetic recording medium such as an HDD (Hard Disk Drive). In magnetic heads and magnetic recording devices, an increase in recording density is desired. Summary of the Invention

[0004] Embodiments of the present invention provide a magnetic head and a magnetic recording device capable of achieving an increase in recording density.

[0005] Means for Solving the Problems

[0006] According to an embodiment of the present invention, a magnetic head includes a first magnetic pole, a second magnetic pole, and a laminate provided between the first magnetic pole and the second magnetic pole. The laminate includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the second magnetic pole, a first non-magnetic layer provided between the first magnetic layer and the second magnetic layer, a second non-magnetic layer provided between the second magnetic layer and the second magnetic pole, and a third non-magnetic layer provided between the first magnetic pole and the first magnetic layer. The first magnetic layer contains a first element including at least one of Fe, Co, and Ni. The second magnetic layer contains (Fe 100-x Co x ) 100-y E y (10 atm% ≤ x ≤ 50 atm%, 10 atm% ≤ y ≤ 90 atm%). The second element E includes at least one selected from the group consisting of Cr, V, Mn, Ti, and Sc. The first magnetic layer does not contain the second element, or the concentration of the second element in the first magnetic layer is lower than the concentration of the second element in the second magnetic layer.

[0007] According to the magnetic head having the above configuration, a magnetic head and a magnetic recording device capable of achieving an increase in recording density can be provided. Brief Description of the Drawings

[0008] Figure 1 (a) and Figure 1 (b) are schematic views illustrating the magnetic head of the first embodiment.

[0009] Figure 2It is a schematic cross-sectional view illustrating a magnetic recording device according to the first embodiment.

[0010] Figure 3 It is a graph illustrating the characteristics of a magnetic head.

[0011] Figure 4 (a) and Figure 4 (b) are graphs illustrating the characteristics of a magnetic head.

[0012] Figure 5 It is a graph illustrating the characteristics of a magnetic head.

[0013] Figure 6 (a) and Figure 6 (b) are schematic plan views illustrating the magnetic head according to the first embodiment.

[0014] Figure 7 (a) and Figure 7 (b) are schematic views illustrating the characteristics of the magnetic head according to the embodiment.

[0015] Figure 8 It is a schematic view illustrating the characteristics of the magnetic head according to the first embodiment.

[0016] Figure 9 (a) and Figure 9 (b) are graphs illustrating the characteristics of the magnetic layer included in the magnetic head.

[0017] Figure 10 It is a graph illustrating the characteristics of the magnetic layer included in the magnetic head.

[0018] Figure 11 It is a graph illustrating the characteristics of the magnetic layer included in the magnetic head.

[0019] Figure 12 It is a schematic cross-sectional view illustrating a part of a magnetic recording device according to the second embodiment.

[0020] Figure 13 (a) and Figure 13 (b) are schematic views illustrating the characteristics of the magnetic recording device according to the embodiment.

[0021] Figure 14 (a) to Figure 14 (c) are schematic views illustrating the characteristics of the magnetic recording device according to the second embodiment.

[0022] Figure 15 It is a schematic view illustrating the characteristics of the magnetic recording device.

[0023] Figure 16 It is a schematic cross-sectional view illustrating a part of a magnetic recording device according to the second embodiment.

[0024] Figure 17It is a schematic cross-sectional view showing a part of the magnetic recording device of the second embodiment.

[0025] Figure 18 It is a schematic cross-sectional view showing a part of the magnetic recording device of the third embodiment.

[0026] Figure 19 It is a schematic diagram showing the characteristics of the magnetic recording device.

[0027] Figure 20 It is a schematic cross-sectional view showing a part of the magnetic recording device of the third embodiment.

[0028] Figure 21 It is a graph showing the characteristics of the magnetic layer included in the magnetic head.

[0029] Figure 22 It is a graph showing the characteristics of the magnetic layer included in the magnetic head.

[0030] Figure 23 It is a schematic cross-sectional view showing the magnetic head of the fourth embodiment.

[0031] Figure 24 It is a schematic cross-sectional view showing the experimental sample.

[0032] Figure 25 It is a graph showing the experimental results.

[0033] Figure 26 (a) to Figure 26 (c) are schematic diagrams showing the magnetic head of the fourth embodiment.

[0034] Figure 27 It is a schematic cross-sectional view showing the magnetic head of the fourth embodiment.

[0035] Figure 28 It is a schematic cross-sectional view showing the magnetic head of the fourth embodiment.

[0036] Figure 29 It is a schematic cross-sectional view showing a part of the magnetic recording device of the fifth embodiment.

[0037] Figure 30 It is a schematic diagram showing the characteristics of the magnetic recording device of the fifth embodiment.

[0038] Figure 31 It is a schematic diagram showing the characteristics of the magnetic recording device.

[0039] Figure 32 (a) to Figure 32 (c) are schematic cross-sectional views showing the characteristics of the magnetic recording device of the fifth embodiment.

[0040] Figure 33It is a schematic cross-sectional view showing a part of the magnetic recording device of the sixth embodiment.

[0041] Figure 34 It is a schematic cross-sectional view showing the magnetic head of the embodiment.

[0042] Figure 35 It is a schematic perspective view showing the magnetic recording device of the embodiment.

[0043] Figure 36 It is a schematic perspective view showing a part of the magnetic recording device of the embodiment.

[0044] Figure 37 It is a schematic perspective view showing the magnetic recording device of the embodiment.

[0045] Figure 38 (a) and Figure 38 (b) are schematic perspective views showing a part of the magnetic recording device of the embodiment.

[0046] Explanation of reference numerals

[0047] 20... Stack, 20D... Circuit, 21... First magnetic layer, 21a, 21b... First and second magnetic regions, 22... Second magnetic layer, 22c, 22d... Third and fourth magnetic regions, 23... Third magnetic layer, 30D... Recording circuit, 30F... Opposite face of the medium, 30c... Coil, 30i... Insulating portion, 31, 32... First and second magnetic poles, 33... Shielding member, 41 - 43... First to third non-magnetic layers, 60... Recording portion, 70... Reproducing portion, 71... Magnetic reproducing element, 72a, 72b... First and second reproducing magnetic shielding members, 80... Magnetic recording medium, 81... Magnetic recording layer, 82... Medium substrate, 83... Magnetization, 85... Medium moving direction, θ1... Angle, 110, 111, 112... Magnetic heads, 150... Magnetic recording device, 154... Suspension, 155... Arm, 156... Voice coil motor, 157... Bearing portion, 158... Head gimbal assembly, 159... Head slider, 159A... Air inflow side, 159B... Air outflow side, 160... Head stack assembly, 161... Support frame, 162... Coil, 180... Recording medium disk, 180M... Spindle motor, 181... Recording medium, 190... Signal processing unit, 210... Magnetic recording device, AR, AR1... Arrows, D1... First direction, I1 - I3... First to third currents, Ith... Threshold current, Iw... Recording current, Mz, Mz1, Mz2... Magnetizations, OS... Oscillation intensity, RR1... Thickness ratio, Rx... Resistance, Rx1 - Rx3... First to third resistances, T1, T2... First and second terminals, W1, W2... First and second wirings, ic, jc1... Currents, je, je1... Electron flows, t1 - t3... First to third thicknesses, t41 - t43... Thicknesses, tm... Time, tm1, tm2... First and second times, ts... Sum. Detailed implementation mode

[0048] Hereinafter, regarding each embodiment of the present invention, while referring to the attached Figure One it will be described.

[0049] The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the sizes between parts, etc. are not necessarily the same as in reality. Even when representing the same part, there are cases where they are represented with different sizes and ratios according to the drawings.

[0050] In the specification of this application and each figure, the same reference numerals are assigned to the same elements as those described above for the figures that have already appeared, and the detailed description is appropriately omitted.

[0051] (First embodiment)

[0052] Figure 1 (a) and Figure 1 (b) are schematic views illustrating the magnetic head of the first embodiment.

[0053] Figure 1 (a) is a sectional view. Figure 1 (b) is a plan view when viewed from the arrow AR1 of Figure 1 (a).

[0054] Figure 2 is a schematic sectional view illustrating a magnetic recording apparatus according to the first embodiment.

[0055] As Figure 2 shown, the magnetic recording apparatus 210 of the embodiment includes a magnetic head 110 and a circuit 20D. The magnetic recording apparatus 210 may also include a magnetic recording medium 80. In the magnetic recording apparatus 210, at least a recording operation is performed. In the recording operation, the magnetic head 110 is used to record information on the magnetic recording medium 80.

[0056] The magnetic head 110 includes a recording section 60. As will be described later, the magnetic head 110 may also include a reproducing section. The recording section 60 includes a first magnetic pole 31, a second magnetic pole 32, and a laminate 20. The laminate 20 is disposed between the first magnetic pole 31 and the second magnetic pole 32.

[0057] For example, the first magnetic pole 31 and the second magnetic pole 32 form a magnetic circuit. The first magnetic pole 31 is, for example, a main magnetic pole. The second magnetic pole 32 is, for example, a trailing shield. Alternatively, the first magnetic pole 31 may be a trailing shield and the second magnetic pole 32 may be a main magnetic pole.

[0058] The direction from the magnetic recording medium 80 to the magnetic head 110 is defined as the Z-axis direction. One direction perpendicular to the Z-axis direction is defined as the X-axis direction. The direction perpendicular to the Z-axis direction and the X-axis direction is defined as the Y-axis direction. The Z-axis direction corresponds, for example, to the height direction. The X-axis direction corresponds, for example, to the track direction. The Y-axis direction corresponds, for example, to the cross-track direction. The magnetic recording medium 80 and the magnetic head 110 move relative to each other along the track direction. A magnetic field (recording magnetic field) generated from the magnetic head 110 is applied to a desired position of the magnetic recording medium 80. The magnetization of the desired position of the magnetic recording medium 80 is controlled to a direction corresponding to the recording magnetic field. Thereby, information is recorded on the magnetic recording medium 80.

[0059] The direction from the first magnetic pole 31 to the second magnetic pole 32 is defined as the first direction D1. The first direction D1 substantially extends along the X-axis direction. In the embodiment, the first direction D1 may be inclined at a small angle with respect to the X-axis direction.

[0060] As Figure 2As shown, a coil 30c is provided. In this example, a part of the coil 30c is between the first magnetic pole 31 and the second magnetic pole 32. In this example, a shielding member 33 is provided. In the X-axis direction, the first magnetic pole 31 is between the shielding member 33 and the second magnetic pole 32. Another part of the coil 30c is between the shielding member 33 and the first magnetic pole 31. An insulating portion 30i is provided between these multiple elements. The shielding member 33 is, for example, a leading shielding member. The magnetic head 110 may also include side shielding members (not shown).

[0061] As Figure 2 shown, a recording current Iw is supplied from the recording circuit 30D to the coil 30c. A recording magnetic field corresponding to the recording current Iw is applied from the first magnetic pole 31 to the magnetic recording medium 80.

[0062] As Figure 2 shown, the first magnetic pole 31 includes a medium facing surface 30F. The medium facing surface 30F is, for example, an ABS (Air Bearing Surface). The medium facing surface 30F faces the magnetic recording medium 80, for example. The medium facing surface 30F is along the X-Y plane, for example.

[0063] As Figure 2 shown, the circuit 20D is electrically connected to the laminate 20. In this example, the laminate 20 is electrically connected to the first magnetic pole 31 and the second magnetic pole 32. A first terminal T1 and a second terminal T2 are provided on the magnetic head 110. The first terminal T1 is electrically connected to the laminate 20 via the first wiring W1 and the first magnetic pole 31. The second terminal T2 is electrically connected to the laminate 20 via the second wiring W2 and the second magnetic pole 32. A current (for example, a direct current) is supplied from the circuit 20D to the laminate 20, for example.

[0064] As Figure 1 (a) and Figure 1 (b) shown, the laminate 20 includes a first magnetic layer 21, a second magnetic layer 22, a first non-magnetic layer 41, a second non-magnetic layer 42, and a third non-magnetic layer 43. In Figure 1 (a) and Figure 1 (b), the insulating portion 30i is omitted.

[0065] The second magnetic layer 22 is provided between the first magnetic layer 21 and the second magnetic pole 32. The first non-magnetic layer 41 is provided between the first magnetic layer 21 and the second magnetic layer 22. The second non-magnetic layer 42 is provided between the second magnetic layer 22 and the second magnetic pole 32. The third non-magnetic layer 43 is provided between the first magnetic pole 31 and the first magnetic layer 21.

[0066] For example, the third non-magnetic layer 43 can be in contact with the first magnetic pole 31 and the first magnetic layer 21. The first non-magnetic layer 41 can be in contact with the first magnetic layer 21 and the second magnetic layer 22. The second non-magnetic layer 42 can be in contact with the second magnetic layer 22 and the second magnetic pole 32.

[0067] At least any one of the first non-magnetic layer 41, the second non-magnetic layer 42, and the third non-magnetic layer 43 contains a third element. The third element includes, for example, at least one selected from the group consisting of Cu, Au, Cr, V, Al, and Ag. In a non-magnetic layer containing such a material, for example, a high spin transmittance can be obtained. For example, a high oscillation intensity can be obtained.

[0068] At least any one of the second non-magnetic layer 42 and the third non-magnetic layer 43 can also contain a fourth element. The fourth element includes, for example, at least one selected from the group consisting of Ru, Ir, Ta, Rh, Pd, Pt, and W. In a non-magnetic layer containing such a material, for example, a low spin transmittance can be obtained. For example, stable oscillation is easily obtained. At least any one of the second non-magnetic layer 42 and the third non-magnetic layer 43 can also contain the above-mentioned third element and fourth element.

[0069] In the first embodiment, the first magnetic layer 21 contains a first element. The first element includes at least one of Fe, Co, and Ni.

[0070] The second magnetic layer 22 contains the first element and a second element. The second element includes at least one selected from the group consisting of Cr, V, Mn, Ti, and Sc. The first magnetic layer 21 does not contain the second element. Alternatively, the concentration of the second element in the first magnetic layer 21 is lower than the concentration of the second element in the second magnetic layer 22.

[0071] For example, the concentration of the above-mentioned second element in the second magnetic layer 22 is 10 atomic % or more and 80 atomic % or less. The second magnetic layer 22 containing such a material has, for example, negative spin polarization. On the other hand, for example, the first magnetic layer 21 has positive spin polarization.

[0072] As Figure 1 (b) shows, a current ic is supplied to such a laminate 20. The current ic is supplied from, for example, the above-mentioned circuit 20D. As Figure 1 (b) shows, the current ic has a direction from the first magnetic layer 21 to the second magnetic layer 22. As Figure 1 (b) shows, the electron flow je accompanying the current ic has a direction from the second magnetic layer 22 to the first magnetic layer 21.

[0073] For example, a current ic above a threshold flows through the laminate 20, causing magnetization oscillation of the magnetic layer contained in the laminate 20. The laminate 20 functions as an STO (Spin-Torque Oscillator), for example. Along with the oscillation, an alternating magnetic field (e.g., a high-frequency magnetic field) is generated from the laminate 20. The alternating magnetic field generated in the laminate 20 is applied to the magnetic recording medium 80 to assist writing to the magnetic recording medium 80. For example, MAMR (Microwave Assisted Magnetic Recording) can be implemented.

[0074] In the magnetic head 110, the first magnetic layer 21 and the second magnetic layer 22 function as oscillation layers, for example. For example, a negative transmitted spin torque from the second magnetic layer 22 acts on the first magnetic layer 21. For example, the spin torque reflected by the first magnetic layer 21 acts on the second magnetic layer 22. For example, the magnetization of the first magnetic layer 21 and the magnetization of the second magnetic layer 22 rotate while interacting with each other.

[0075] As Figure 1 As shown in (b), the thickness of the first magnetic layer 21 along the first direction (from the first magnetic pole 31 to the second magnetic pole 32) is defined as the first thickness t1. The thickness of the second magnetic layer 22 along the first direction is defined as the second thickness t2. In the first embodiment, for example, the first thickness t1 can be the same as the second thickness t2. Thus, as described later, oscillation can be easily obtained.

[0076] The thickness of the first non-magnetic layer 41 along the first direction is defined as the thickness t41. The thickness of the second non-magnetic layer 42 along the first direction is defined as the thickness t42. The thickness of the third non-magnetic layer 43 along the first direction is defined as the thickness t43. These thicknesses are, for example, 0.5 nm or more and 6 nm or less. By these thicknesses being 0.5 nm or more, stable oscillation becomes easier. By these thicknesses being 6 nm or less, for example, the spin transmittance is likely to be high. For example, a high oscillation intensity can be easily obtained.

[0077] Hereinafter, an example of the simulation result of the behavior of oscillation in the laminate 20 will be described. In the simulation model, the configuration shown in Figure 1 (b) is set. That is, the first magnetic pole 31, the second magnetic pole 32, the first magnetic layer 21, the second magnetic layer 22, and the first to third non-magnetic layers 41 to 43 are set. The oscillation characteristics of the magnetization when a current ic (a current above the threshold) exemplified in Figure 1 (b) is supplied are simulated. In the simulation model, the physical property values of the Fe 70 Co 30 alloy are used as the physical property values of the first magnetic layer 21. The physical property values of the Fe70 Cr 30 Physical property values of the alloy. As the physical property values of the first non-magnetic layer 41 and the third non-magnetic layer 43, the physical property values of Cu are used. As the physical property values of the second non-magnetic layer 42, the physical property values of Ta are used. The thicknesses t41 to t43 are 2 nm.

[0078] Figure 3 It is a graph showing the characteristics of the magnetic head.

[0079] In Figure 3 In the illustrated simulation, while keeping the sum of the first thickness t1 of the first magnetic layer 21 and the second thickness t2 of the second magnetic layer 22 constant at 19 nm, the ratio of the first thickness t1 to the second thickness t2 is changed. Figure 3 The horizontal axis of is the thickness ratio RR1. The thickness ratio RR1 is the ratio of the first thickness t1 to the second thickness t2 (i.e., t1 / t2). The vertical axis is the oscillation strength OS. The oscillation strength OS is the sum of the product of the amplitude of the magnetization vibration of the first magnetic layer 21 and the first thickness t1 and the product of the amplitude of the magnetization vibration of the second magnetic layer 22 and the second thickness t2. When the oscillation strength OS is high, for example, the recording density based on MAMR is likely to increase.

[0080] As Figure 3 shown, when the thickness ratio RR1 is close to 1, a high oscillation strength OS can be obtained. For example, when the thickness ratio RR1 is 0.25 or more and 4 or less, stable oscillation can be obtained. The thickness ratio RR1 can also be 0.33 or more. A higher oscillation strength OS can be obtained. The thickness ratio RR1 can also be 3 or less. A higher oscillation strength OS can be obtained.

[0081] In the first embodiment, the first thickness t1 is preferably 0.25 times or more and 4 times or less the second thickness t2. Thereby, a high oscillation strength OS can be obtained. Stable oscillation can be obtained. The first thickness t1 can also be 0.33 times or more and 3 times or less the second thickness t2. A higher oscillation strength OS can be obtained. More stable oscillation can be obtained. According to the first embodiment, stable MAMR can be implemented. A magnetic head capable of achieving an increase in recording density can be provided.

[0082] Figure 4 (a) and Figure 4 (b) are graphs showing the characteristics of the magnetic head.

[0083] Figure 4 (a)'s horizontal axis is the first thickness t1. In Figure 4 (a), the second thickness t2 is 15 nm. Figure 4 (b)'s horizontal axis is the second thickness t2. In Figure 4 (b), the first thickness t1 is 15 nm. InFigure 4 (a) and Figure 4 in (b), the current ic supplied to the laminate 20 is 2.5×10 8 A / cm 2 . Figure 4 (a) and Figure 4 the vertical axis of (b) is the oscillation strength OS.

[0084] As Figure 4 shown in (a), the first thickness t1 is preferably 5 nm or more. Thereby, a high oscillation strength OS can be obtained. The first thickness t1 can be, for example, 20 nm or less. For example, the distance (e.g., the recording gap) between the first magnetic pole 31 and the second magnetic pole 32 can be shortened. For example, a high recording density can be easily obtained.

[0085] As Figure 4 shown in (b), the second thickness t2 is preferably 5 nm or more. Thereby, a high oscillation strength OS can be obtained. The second thickness t2 can be 20 nm or less. For example, the recording gap can be shortened. For example, a high recording density can be easily obtained.

[0086] Figure 5 is a graph showing the characteristics of the magnetic head.

[0087] Figure 5 The horizontal axis of is the sum ts of the first thickness t1 and the second thickness t2. The vertical axis is the oscillation strength OS.

[0088] As Figure 5 shown, the sum ts of the first thickness t1 and the second thickness t2 is preferably 15 nm or more. Thereby, a high oscillation strength OS can be obtained. The sum ts can be 40 nm or less. For example, the recording gap can be shortened. For example, a high recording density can be easily obtained.

[0089] Figure 6 (a) and Figure 6 (b) are schematic plan views showing the magnetic head of the first embodiment.

[0090] As Figure 6 shown in (a), the magnetic head 111 of the first embodiment includes a first magnetic pole 31, a second magnetic pole 32, and a laminate 20. In the magnetic head 111, the laminate 20 also includes a first magnetic layer 21, a second magnetic layer 22, a first non-magnetic layer 41, a second non-magnetic layer 42, and a third non-magnetic layer 43. In the magnetic head 111, at least one of the first magnetic layer 21 and the second magnetic layer 22 includes a plurality of regions. The other configurations in the magnetic head 111 can be the same as those in the magnetic head 110.

[0091] For example, the first magnetic layer 21 includes a first magnetic region 21a and a second magnetic region 21b. The second magnetic region 21b is located between the first magnetic region 21a and the first non-magnetic layer 41. For example, the saturation magnetization of the first magnetic region 21a is larger than that of the second magnetic region 21b. Thus, for example, stable oscillation can be easily obtained.

[0092] For example, the saturation magnetization of the first magnetic region 21a is 1.2 times or more that of the second magnetic region 21b. Thus, stable oscillation can be easily obtained. The saturation magnetization of the first magnetic region 21a may also be 3 times or less that of the second magnetic region 21b. Thus, stable oscillation can be easily obtained.

[0093] For example, the concentration of Fe in the first magnetic region 21a is higher than that of Fe in the second magnetic region 21b. For example, the saturation magnetization of the first magnetic region 21a is easily larger than that of the second magnetic region 21b. For example, the concentration of Ni in the first magnetic region 21a is lower than that of Ni in the second magnetic region 21b. Thus, for example, the saturation magnetization of the first magnetic region 21a is easily larger than that of the second magnetic region 21b. The boundary between the first magnetic region 21a and the second magnetic region 21b may be clear or unclear.

[0094] For example, the second magnetic layer 22 includes a third magnetic region 22c and a fourth magnetic region 22d. The fourth magnetic region 22d is located between the third magnetic region 22c and the first non-magnetic layer 41. For example, the saturation magnetization of the third magnetic region 22c is larger than that of the fourth magnetic region 22d. Thus, for example, stable oscillation can be easily obtained.

[0095] For example, the saturation magnetization of the third magnetic region 22c is 1.2 times or more that of the fourth magnetic region 22d. Thus, stable oscillation can be easily obtained. The saturation magnetization of the third magnetic region 22c may also be 3 times or less that of the fourth magnetic region 22d. Thus, stable oscillation can be easily obtained.

[0096] For example, the concentration of Fe in the third magnetic region 22c is higher than the concentration of Fe in the fourth magnetic region 22d. Thus, for example, the saturation magnetization of the third magnetic region 22c is easily larger than that of the fourth magnetic region 22d. For example, the concentration of the second element in the third magnetic region 22c is lower than the concentration of the second element in the fourth magnetic region 22d. Thus, for example, the saturation magnetization of the third magnetic region 22c is easily larger than that of the fourth magnetic region 22d. The boundary between the third magnetic region 22c and the fourth magnetic region 22d may be clear or unclear.

[0097] As Figure 6(As shown in (b), the head 112 of the first embodiment includes a first magnetic pole 31, a second magnetic pole 32, and a laminate 20. In the head 112, the laminate 20 includes a third magnetic layer 23 in addition to the first magnetic layer 21, the second magnetic layer 22, the first non-magnetic layer 41, the second non-magnetic layer 42, and the third non-magnetic layer 43. The other configurations in the head 112 can be the same as those in the head 110 or the head 111.)

[0098] (The third magnetic layer 23 is disposed between the second magnetic layer 22 and the second non-magnetic layer 42. The third magnetic layer 23 contains a first element including at least one of Fe, Co, and Ni. The third magnetic layer 23 does not contain a second element. Alternatively, the concentration of the second element in the third magnetic layer 23 is lower than the concentration of the second element in the second magnetic layer 22. As already described, the second element includes at least one selected from the group consisting of Cr, V, Mn, Ti, and Sc.)

[0099] (For example, the saturation magnetization of the third magnetic layer 23 is higher than the saturation magnetization of the second magnetic layer 22. Thus, for example, stable oscillation can be easily obtained. The boundary between the third magnetic layer 23 and the first magnetic layer 21 may or may not be clear. The third magnetic layer 23 may be continuous with the second magnetic layer 22.)

[0100] (In the head 112, the first thickness t1 of the first magnetic layer 21 is, for example, 0.8 times or more and 1.25 times or less the sum of the third thickness t3 of the third magnetic layer 23 and the second thickness t2 of the second magnetic layer 22 along the first direction (the direction from the first magnetic pole 31 to the second magnetic pole 32). For example, high oscillation intensity OS can be obtained. Stable oscillation can be obtained.)

[0101] Figure 7 (a) and Figure 7 (b) are schematic diagrams illustrating the characteristics of the head of the first embodiment.)

[0102] Figure 7 (a) and Figure 7 (b), the horizontal axis is the recording current Iw flowing through the coil 30c. According to the recording current Iw flowing through the coil 30c, the recording magnetic field generated from at least one of the first magnetic pole 31 and the second magnetic pole 32 changes. The recording magnetic field is applied to the laminate 20. Therefore, the horizontal axis corresponds to the magnetic field applied to the laminate 20.) Figure 7 (a) and Figure 7 (b), the vertical axis is the resistance Rx of the laminate 20.)

[0103] (In Figure 7 (a), the current ic supplied to the laminate 20 is smaller than the threshold current Ith for oscillation. In Figure 7 (a), for example, the current ic is 1.0×106 A / cm 2 。In Figure 7 (b), the current ic supplied to the laminate 20 is larger than the threshold current Ith. In Figure 7 (b), the current ic is 1.0×10 8 A / cm 2 。 Figure 7 The current ic in Figure 7 (b) is 100 times the current ic in Figure 7 (a). Figure 7 (a) corresponds to the characteristics in the non-oscillating state.

[0104] As Figure 7 (a) shows, when the current ic is sufficiently smaller than the threshold current Ith, if the absolute value of the recording current Iw (i.e., the magnetic field) increases, the resistance Rx rises. If the absolute value of the recording current Iw is sufficiently large, the resistance Rx saturates. For example, the recording current Iw when the resistance Rx saturates is, for example, 50 mA. The magnetic field at this time is about 15000 Oe.

[0105] In the magnetic recording device head of the first embodiment, for example, the characteristics exemplified in Figure 7 (a) are generated. As Figure 7 (a) shows, the resistance Rx of the laminate 20 is the first resistance Rx1 when the recording current Iw is the first current I1. The resistance Rx is the second resistance Rx2 when the recording current Iw is the second current I2. The resistance Rx is the third resistance Rx3 when the recording current Iw is the third current I3. The absolute value of the first current I1 is smaller than the absolute value of the second current I2 and smaller than the absolute value of the third current I3. The direction of the second current I2 is opposite to the direction of the third current I3. The first resistance Rx1 is lower than the second resistance Rx2 and lower than the third resistance Rx3. For example, a valley-type current-resistance characteristic is generated. The first current I1 can be substantially 0.

[0106] As Figure 7As shown in (b), when the current ic is greater than the threshold current Ith and oscillations occur, the resistance Rx exhibits mountain and valley characteristics. In this case, when the absolute values of the second current I2 and the third current I3 are sufficiently large, it can also be regarded as valley-type characteristics. For example, the absolute values of the second current I2 and the third current I3 can be set to the values when the resistance Rx saturates even when the current ic is sufficiently smaller than the threshold current Ith. In this case, the first resistance Rx1 is also lower than the second resistance Rx2 and lower than the third resistance Rx3. In contrast, in a general STO, mountain-type characteristics are generated. The valley-type characteristics in the first embodiment can be considered as unique characteristics based on the configuration of the first embodiment.

[0107] Such unique characteristics may be related to the fact that the first magnetic layer 21 has a positive polarization and the second magnetic layer 22 has a negative polarization. In such a combination, when the absolute value of the recording current Iw is large (i.e., when the absolute value of the magnetic field is large), the magnetization directions of the first magnetic layer 21 and the second magnetic layer 22 become close to parallel to each other, and it is considered that the resistance increases. In a general STO, both magnetic layers have a positive polarization. When the magnetization directions become close to parallel to each other, the resistance decreases.

[0108] Figure 8 It is a schematic diagram illustrating the characteristics of the magnetic head of the first embodiment.

[0109] Figure 8 The horizontal axis is the time tm. The vertical axis is the magnetization Mz (normalized value). In Figure 8 it shows an example related to the magnetization Mz1 of the first magnetic layer 21 and the magnetization Mz2 of the second magnetic layer 22. As Figure 8 shown, the magnetization Mz1 and the magnetization Mz2 rotate in opposite phases (for example, in a state of maintaining opposite orientations).

[0110] The first embodiment may also include the following configurations (for example, technical solutions).

[0111] (Configuration 1)

[0112] A magnetic head, comprising:

[0113] A first magnetic pole;

[0114] A second magnetic pole; and

[0115] A laminate disposed between the first magnetic pole and the second magnetic pole,

[0116] The laminate includes:

[0117] A first magnetic layer;

[0118] A second magnetic layer disposed between the first magnetic layer and the second magnetic pole;

[0119] A first non-magnetic layer is disposed between the first magnetic layer and the second magnetic layer;

[0120] A second non-magnetic layer is disposed between the second magnetic layer and the second magnetic pole; and

[0121] A third non-magnetic layer is disposed between the first magnetic pole and the first magnetic layer,

[0122] The first magnetic layer contains a first element including at least one of Fe, Co, and Ni,

[0123] The second magnetic layer contains the first element and a second element including at least one selected from the group consisting of Cr, V, Mn, Ti, and Sc,

[0124] The first magnetic layer does not contain the second element, or the concentration of the second element in the first magnetic layer is lower than the concentration of the second element in the second magnetic layer,

[0125] A first thickness of the first magnetic layer along a first direction from the first magnetic pole to the second magnetic pole is 0.25 times or more and 4 times or less of a second thickness of the second magnetic layer along the first direction.

[0126] (Constitution 2)

[0127] The magnetic head according to Constitution 1,

[0128] The first thickness is 0.33 times or more of the second thickness.

[0129] (Constitution 3)

[0130] The magnetic head according to Constitution 1 or 2,

[0131] The third non-magnetic layer is in contact with the first magnetic pole and the first magnetic layer.

[0132] (Constitution 4)

[0133] The magnetic head according to any one of Constitutions 1 to 3,

[0134] The first non-magnetic layer is in contact with the first magnetic layer and the second magnetic layer.

[0135] (Constitution 5)

[0136] The magnetic head according to any one of Constitutions 1 to 4,

[0137] The second non-magnetic layer is in contact with the second magnetic layer and the second magnetic pole.

[0138] (Constitution 6)

[0139] The magnetic head according to Configuration 1

[0140] At least any one of the first non-magnetic layer, the second non-magnetic layer, and the third non-magnetic layer contains a third element including at least one selected from the group consisting of Cu, Au, Cu, V, Al, and Ag.

[0141] (Configuration 7)

[0142] The magnetic head according to any one of Configurations 1 to 6

[0143] The second thickness is 5 nm or more.

[0144] (Configuration 8)

[0145] The magnetic head according to any one of Configurations 1 to 7

[0146] The first thickness is 5 nm or more.

[0147] (Configuration 9)

[0148] The magnetic head according to any one of Configurations 1 to 8

[0149] The sum of the first thickness and the second thickness is 15 nm or more.

[0150] (Configuration 10)

[0151] The magnetic head according to any one of Configurations 1 to 9

[0152] The first magnetic layer includes a first magnetic region and a second magnetic region,

[0153] The second magnetic region is between the first magnetic region and the first non-magnetic layer,

[0154] The saturation magnetization of the first magnetic region is larger than the saturation magnetization of the second magnetic region.

[0155] (Configuration 11)

[0156] The magnetic head according to any one of Configurations 1 to 9

[0157] The first magnetic layer includes a first magnetic region and a second magnetic region,

[0158] The second magnetic region is between the first magnetic region and the first non-magnetic layer,

[0159] The concentration of Fe in the first magnetic region is higher than the concentration of Fe in the second magnetic region.

[0160] (Configuration 12)

[0161] The magnetic head according to any one of Configurations 1 to 11,

[0162] The second magnetic layer includes a third magnetic region and a fourth magnetic region,

[0163] The fourth magnetic region is between the third magnetic region and the first non-magnetic layer,

[0164] The saturation magnetization of the third magnetic region is larger than the saturation magnetization of the fourth magnetic region.

[0165] (Configuration 13)

[0166] The magnetic head according to any one of Configurations 1 to 12,

[0167] The second magnetic layer includes a third magnetic region and a fourth magnetic region,

[0168] The fourth magnetic region is between the third magnetic region and the first non-magnetic layer,

[0169] The concentration of Fe in the third magnetic region is higher than the concentration of Fe in the fourth magnetic region.

[0170] (Configuration 14)

[0171] The magnetic head according to any one of Configurations 1 to 13,

[0172] The laminate further includes a third magnetic layer,

[0173] The third magnetic layer is disposed between the second magnetic layer and the second non-magnetic layer,

[0174] The third magnetic layer contains a first element including at least one of Fe, Co, and Ni,

[0175] The third magnetic layer does not contain the second element, or the concentration of the second element in the third magnetic layer is lower than the concentration of the second element in the second magnetic layer.

[0176] (Configuration 15)

[0177] The magnetic head according to any one of Configurations 1 to 14,

[0178] The concentration of the second element in the second magnetic layer is 10 atomic % or more and 80 atomic % or less.

[0179] (Configuration 16)

[0180] The magnetic head according to any one of Configurations 1 to 15,

[0181] A current is supplied to the laminate in a direction from the first magnetic layer toward the second magnetic layer.

[0182] (Constitution 17)

[0183] The magnetic head according to Constitution 16,

[0184] When the current is supplied to the laminate, an alternating magnetic field is generated from the laminate.

[0185] (Constitution 18)

[0186] The magnetic head according to any one of Constitutions 1 to 17,

[0187] further includes a coil,

[0188] A change in the recording magnetic field generated from at least one of the first magnetic pole and the second magnetic pole according to the recording current flowing through the coil,

[0189] The resistance of the laminate is a first resistance when the recording current is a first current,

[0190] The resistance is a second resistance when the recording current is a second current,

[0191] The resistance is a third resistance when the recording current is a third current,

[0192] The absolute value of the first current is smaller than the absolute value of the second current and smaller than the absolute value of the third current,

[0193] The direction of the second current is opposite to the direction of the third current,

[0194] The first resistance is lower than the second resistance and lower than the third resistance.

[0195] (Constitution 19)

[0196] A magnetic recording device includes:

[0197] The magnetic head according to any one of Constitutions 1 to 16; and

[0198] a circuit,

[0199] The circuit can supply a current to the laminate,

[0200] The current has a direction from the first magnetic layer toward the second magnetic layer.

[0201] (Constitution 20)

[0202] The magnetic recording device according to Constitution 19,

[0203] When current is supplied from the circuit to the laminate, an alternating magnetic field is generated from the laminate.

[0204] In the first embodiment, the second magnetic layer 22 contains (Fe 100-x Co x ) 100-y E y (10 atm% ≤ x ≤ 50 atm%, 10 atm% ≤ y ≤ 90 atm%). The second element E includes at least one selected from the group consisting of Cr, V, Mn, Ti, and Sc. The composition ratios x and y are atomic percentages (atm%). The first magnetic layer 21 does not contain the second element E. Alternatively, the concentration of the second element E in the first magnetic layer 21 is lower than the concentration of the second element E in the second magnetic layer 22. With such materials, in the second magnetic layer 22, for example, it is easy to obtain a high saturation magnetic flux density and a negative and large absolute value of spin polarization.

[0205] Figure 9 (a) and Figure 9 (b) are graphs illustrating the characteristics of the magnetic layer included in the magnetic head.

[0206] Figure 9 (a) illustrates the characteristics when the magnetic layer does not contain the second element. In this example, the magnetic layer contains Fe 100- x Co x . Figure 9 The horizontal axis of (a) is the composition ratio x (concentration of Co). The vertical axis is the saturation magnetic flux density Bm1. As Figure 9 (a) shows, when the composition ratio x is 10 atm% or more and 50 atm% or less, a high saturation magnetic flux density Bm1 can be obtained. When the composition ratio x is 75 atm% or less, the magnetic layer has a BCC structure. If the composition ratio x exceeds 75 atm, the magnetic layer has an fcc structure.

[0207] Figure 9 (b) illustrates the characteristics when the composition ratio of the second element in the magnetic layer is changed. Figure 9 The horizontal axis of (b) is the composition ratio y. In this example, the second element E is Cr. The vertical axis is the saturation magnetic flux density Bm1. As Figure 9 (b) shows, if the composition ratio y is high, a saturation magnetic flux density Bm1 can be obtained. When the magnetic layer contains Fe 50 Co 50 or Fe 90 Co 10 , substantially the same characteristics can be obtained. When the magnetic layer contains Fe 70 Co 30In this case, a higher saturation magnetic flux density Bm1 can be obtained at the same composition ratio y compared to when combined with others. When the magnetic layer contains the second element, the composition ratio x is preferably 10 atm% or more and 50 atm% or less.

[0208] Figure 10 It is a graph showing the characteristics of the magnetic layer included in the magnetic head.

[0209] Figure 10 It illustrates the change in the spin polarization of the magnetic layer when the composition ratio y is changed while the composition ratio of Co to Fe is fixed. Figure 10 The horizontal axis is the composition ratio y of the second element E. The vertical axis is the spin polarization Ps1 (the value of spin polarization). As Figure 10 shown, when the composition ratio y of the second element E is 3 atm% or more, a negative spin polarization Ps1 can be obtained. If the composition ratio y is high, the absolute value of the negative spin polarization Ps1 becomes larger. When the composition ratio y is 10% or more, a negative spin polarization Ps1 with a large absolute value can be obtained. For example, the composition ratio y can also be 10 atm% or more and 30 atm% or less.

[0210] From Figure 9 (b) and Figure 10 it can be seen that in the embodiment, preferably, the composition ratio x of Co is 10 atm% or more and 50 atm% or less, and the composition ratio y of the second element E is 10 atm% or more. The composition ratio y of the second element E is preferably 90 atm% or less. Thus, a higher saturation magnetic flux density Bm1 can be obtained. In the embodiment, the composition ratio y of the second element E can also be 10 atm% or more and 50 atm% or less.

[0211] Figure 11 It is a graph showing the characteristics of the magnetic layer included in the magnetic head.

[0212] Figure 11 It illustrates the oscillation strength OS when the composition of the second magnetic layer 22 is changed. In this example, the composition ratio y is 20 atm%, and the composition ratio x of Co is changed. The second element E is Cr. Figure 11 The horizontal axis is the composition ratio x. The vertical axis is the oscillation strength OS. From Figure 11 it can be seen that when the composition ratio x is 10 atm% or more and 50 atm% or less, a high oscillation strength OS can be obtained. Under this condition, for example, the recording density based on MAMR is likely to be improved. The composition ratio x is more preferably 25 atm% or more and 35 atm% or less. It is easy to stably obtain a high oscillation strength OS.

[0213] Thus, preferably, the second magnetic layer 22 (e.g., a magnetic layer having a negative spin polarization) has the above-described composition. Thereby, for example, it is easy to obtain a high saturation magnetic flux density Bm1 and a large negative spin polarization Ps1 with a large absolute value. For example, stable oscillation is easily obtained.

[0214] In the first embodiment, the second thickness t2 of the second magnetic layer 22 is preferably 5 nm or more and 15 nm or less. In the first embodiment, the thickness t41 of the first non-magnetic layer 41 and the thickness t42 of the second non-magnetic layer 42 are each preferably 0.5 nm or more and 6 nm or less.

[0215] (Second Embodiment)

[0216] Figure 12 FIG. is a schematic cross-sectional view showing a part of a magnetic recording device according to the second embodiment.

[0217] The magnetic recording device 210 according to the second embodiment also includes a magnetic head 110A and a circuit 20D. The magnetic recording device 210 may also include a magnetic recording medium 80. In the magnetic recording device 210, for example, at least a recording operation is performed. In the recording operation, the magnetic head 110A is used to record information on the magnetic recording medium 80.

[0218] In this example, the circuit 20D (see Figure 2 ) is also electrically connected to the laminate 20. In this example, the laminate 20 is electrically connected to the first magnetic pole 31 and the second magnetic pole 32. A first terminal T1 and a second terminal T2 are provided on the magnetic head 110A. The first terminal T1 is electrically connected to the laminate 20 via the first wiring W1 and the first magnetic pole 31. The second terminal T2 is electrically connected to the laminate 20 via the second wiring W2 and the second magnetic pole 32. A current (e.g., a direct current) is supplied from the circuit 20D to the laminate 20, for example.

[0219] As Figure 12 shown, the laminate 20 includes a first magnetic layer 21, a second magnetic layer 22, a third magnetic layer 23, a first non-magnetic layer 41, a second non-magnetic layer 42, and a third non-magnetic layer 43. In this example, a fourth non-magnetic layer 44 is provided.

[0220] The second magnetic layer 22 is provided between the first magnetic pole 31 and the first magnetic layer 21. The third magnetic layer 23 is provided between the first magnetic pole 31 and the second magnetic layer 22. The first non-magnetic layer 41 is provided between the first magnetic layer 21 and the second magnetic pole 32. The second non-magnetic layer 42 is provided between the second magnetic layer 22 and the first magnetic layer 21. The third non-magnetic layer 43 is provided between the third magnetic layer 23 and the second magnetic layer 22. In the case where the fourth non-magnetic layer 44 is provided, the fourth non-magnetic layer 44 is provided between the first magnetic pole 31 and the third magnetic layer 23.

[0221] The first magnetic layer 21 contains at least one of Fe, Co, and Ni. The second magnetic layer 22 contains at least one of Fe, Co, and Ni. For example, the first magnetic layer 21 and the second magnetic layer 22 have a positive spin polarization.

[0222] The third magnetic layer 23 contains a first element and a second element. The first element includes at least one of Fe, Co, and Ni. The second element includes at least one selected from the group consisting of Cr, V, Mn, Ti, and Sc. The second element is, for example, a doping element. The ratio (e.g., concentration) of the second element in the third magnetic layer 23 is, for example, 1 atomic % or more and 80 atomic % or less. For example, the third magnetic layer 23 has a negative spin polarization.

[0223] The first magnetic layer 21 and the second magnetic layer 22 substantially do not contain the above-described second element. Alternatively, the concentration of the second element in the first magnetic layer 21 and the second magnetic layer 22 is lower than the concentration of the second element in the third magnetic layer 23.

[0224] The first non-magnetic layer 41 contains, for example, at least one selected from the group consisting of Cu, Ag, Au, Al, and Cr. The first non-magnetic layer 41 functions, for example, as a layer that allows the polarized spin to propagate.

[0225] The second non-magnetic layer 42 contains, for example, at least one selected from the group consisting of Ta, Pt, W, Mo, Ir, Ru, Tb, Rh, Cr, and Pd. The second non-magnetic layer 42 functions, for example, as a layer that attenuates the polarized spin.

[0226] The third non-magnetic layer 43 contains at least one selected from the group consisting of Cu, Ag, Au, Al, and Cr. The third non-magnetic layer 43 functions, for example, as a layer that allows the polarized spin to propagate.

[0227] The fourth non-magnetic layer 44 contains at least one selected from the group consisting of Cu, Ag, Au, Al, and Cr. The fourth non-magnetic layer 44 functions, for example, as a layer that allows the polarized spin to propagate.

[0228] As Figure 12 shown, for example, the current jc1 supplied from the circuit 20D to the laminate 20 has a direction from the second magnetic pole 32 to the first magnetic pole 31. The current jc1 has a direction from the first magnetic layer 21 to the second magnetic layer 22. The electron flow je1 has a direction from the first magnetic pole 31 to the second magnetic pole 32.

[0229] For example, when no current jc1 is supplied to the laminate 20, the magnetization direction of the first magnetic layer 21 is substantially the same as the magnetization directions of the first magnetic pole 31 and the second magnetic pole 32. A part of the magnetic field (recording magnetic field) coming out from the first magnetic pole 31 goes to the magnetic recording medium 80. On the other hand, another part of the magnetic field (recording magnetic field) coming out from the first magnetic pole 31 does not go to the magnetic recording medium 80, enters the second magnetic pole 32 through the laminate 20. Therefore, the proportion of the recording magnetic field coming out from the first magnetic pole 31 that goes to the magnetic recording medium 80 is small.

[0230] If current jc1 is supplied to the laminate 20, the magnetization direction of the first magnetic layer 21 is reversed with respect to the magnetization directions of the first magnetic pole 31 and the second magnetic pole 32. As a result, the magnetic field (recording magnetic field) coming out from the first magnetic pole 31 hardly goes to the laminate 20. Therefore, the proportion of the recording magnetic field coming out from the first magnetic pole 31 that goes to the magnetic recording medium 80 becomes higher than the case where no current jc1 is supplied to the laminate 20. The recording magnetic field coming out from the first magnetic pole 31 is effectively applied to the magnetic recording medium 80.

[0231] If the distance (recording gap) between the first magnetic pole 31 and the second magnetic pole 32 becomes shorter, this phenomenon becomes more significant. By using such a laminate 20, good recording can be performed even when the recording gap becomes smaller. According to the second embodiment, the recording gap at which good recording can be achieved can be reduced. According to the second embodiment, a magnetic recording device capable of increasing the recording density can be provided.

[0232] On the other hand, there is MAMR (Microwave Assisted Magnetic Recording) in which a high-frequency magnetic field generated from a laminate including a plurality of magnetic layers is applied to the magnetic recording medium 80 to locally control the magnetic properties of the magnetic recording medium 80 for recording. In MAMR, a high-frequency magnetic field is generated by the oscillation of the magnetization of the magnetic layer.

[0233] In contrast, in the second embodiment, the magnetization of the first magnetic layer 21 is reversed with respect to the magnetization of the first magnetic pole 31 and the second magnetic pole 32. By an operation different from MAMR, the magnetic field coming out from the first magnetic pole 31 is efficiently applied to the magnetic recording medium 80.

[0234] Hereinafter, examples of the characteristics of the magnetic head 110A according to the second embodiment will be described.

[0235] Figure 13 (a) and Figure 13 (b) are schematic diagrams illustrating the characteristics of the magnetic recording device according to the embodiment.

[0236] These figures schematically show the relationship between the magnitude of the current jc1 flowing into the laminate 20 and the resistance of the laminate 20. The horizontal axis of these figures is the magnitude of the current jc1. Figure 13 The vertical axis of (a) is the resistance Rz1 of the laminate 20.

[0237] As Figure 13 shown in (a), if the current jc1 increases, the resistance Rz1 increases. As Figure 13 shown in (a), the magnitude of the current jc1 can be divided into a first current range ir1, a second current range ir2, and a third current range ir3. The third current range ir3 is between the first current range ir1 and the second current range ir2.

[0238] In the first current range ir1 and the second current range ir2, the resistance Rz1 changes according to a quadratic function with respect to the magnitude of the current jc1. It is considered that this is due to the temperature rise of the laminate 20 corresponding to the increase in the current jc1.

[0239] The change in the resistance Rz1 in the third current range ir3 is different from the influence of the temperature rise. It is considered that the change in the resistance Rz1 in the third current range ir3 is caused by the magnetoresistance effect based on the reversal rate of magnetization of the magnetic layer.

[0240] In Figure 13 (b), excluding Figure 13 the change (influence of temperature) of the quadratic function in (a), the relationship between the magnitude of the current jc1 and the resistance Rz2 is shown. As Figure 13 shown in (b), when the influence of the quadratic function is removed, in the first current range ir1, the resistance Rz2 is substantially constant. Or, in the first current range ir1, compared with the third current range ir3, the resistance Rz2 changes slowly. In the third current range ir3, the resistance Rz2 changes. In the second current range ir2, the resistance Rz2 is substantially constant. Or, in the second current range ir2, compared with the third current range ir3, the resistance Rz2 changes slowly.

[0241] For example, as Figure 13 shown in (b), the resistance Rz2 of the laminate 20 when the current jc1 flowing into the laminate 20 is the first current i1 is the first resistance R1. The first current i1 is in the first current range ir1.

[0242] As Figure 13 shown in (b), when the current jc1 flowing into the laminate 20 is the second current i2, the resistance Rz2 of the laminate 20 is the second resistance R2. The second current i2 is larger than the first current i1. The second current i2 is in the second current range ir2. The second resistance R2 is higher than the first resistance R1.

[0243] At the third current i3 between the first current i1 and the second current i2, the resistance Rz2 of the laminate 20 is the third resistance R3. The third current i3 is within the third current range ir3.

[0244] For example, when the current jc1 is the first current i1 or the second current i2, the resistance Rz2 does not substantially oscillate. For example, when the current jc1 is the third current i3, the resistance Rz2 oscillates. The first current i1, the second current i2, and the third current i3 have a direction from the first magnetic layer 21 toward the second magnetic layer 22.

[0245] Figure 14 (a) to Figure 14 (c) are schematic diagrams illustrating the characteristics of the magnetic recording device of the second embodiment.

[0246] These diagrams illustrate the signals after performing FFT (Fast Fourier Transform) processing on a part of the signal of the resistance Rz2. The signal of the resistance Rz2 includes a component that changes with time (high-frequency component) and a component that does not substantially change with time (component of the time average). In the FFT processing, the component of the resistance Rz2 that changes with time is processed. The horizontal axis of these diagrams is the frequency ff. The vertical axis is the signal intensity Int. Figure 14 (a) corresponds to when the current jc1 is the first current i1. Figure 14 (b) corresponds to when the current jc1 is the third current i3. Figure 14 (c) corresponds to when the current jc1 is the second current i2.

[0247] As Figure 14 shown in (b), when the current jc1 is the third current i3, a peak p1 is observed at one frequency fp1. This peak corresponds to the generation of high-frequency oscillation in the laminate 20.

[0248] As Figure 14 (a) and Figure 14 (c) shown, when the current jc1 is the first current i1 or the second current i2, the peak p1 is not clearly observed. At these currents, the magnetization oscillation effective for MAMR is not substantially generated.

[0249] Thus, when the current jc1 flowing through the laminate 20 is the third current i3 between the first current i1 and the second current i2, the resistance Rz2 of the laminate 20 oscillates.

[0250] In the second embodiment, the recording operation is performed using the laminate 20 having such characteristics.

[0251] In the second embodiment, in the recording operation of recording information on the magnetic recording medium 80 using the magnetic head 110A, the circuit 20D can supply the above-described second current i2 to the laminate 20. By performing the recording operation of supplying the recording current Iw from the recording circuit 30D to the coil while supplying the second current i2 as described above, the amount of the recording magnetic field going from the first magnetic pole 31 to the magnetic recording medium 80 can be increased compared to the case where the recording operation is performed without supplying the second current i2. The recording gap that can achieve good recording can be reduced. According to the embodiment, a magnetic recording apparatus capable of improving the recording density can be provided.

[0252] Hereinafter, examples of the characteristics of the magnetic recording apparatus will be described.

[0253] Figure 15 It is a schematic diagram illustrating the characteristics of the magnetic recording apparatus.

[0254] Figure 15 The simulation results of the characteristics of the magnetic head of the laminate 20 including the first condition CH1, the second condition CH2, and the third condition CH3 are illustrated. In the first condition CH1, the configuration of the above-described magnetic head 110A is applied. That is, the second nonmagnetic layer 42 is Ta, and the second nonmagnetic layer 42 attenuates the polarized spins, for example.

[0255] In the second condition CH2, the second nonmagnetic layer 42 is Cu, and the second nonmagnetic layer 42 propagates the polarized spins, for example. The configuration other than this in the second condition CH2 is the same as the configuration in the first condition CH1.

[0256] In the third condition CH3, the second nonmagnetic layer 42 is not provided, and the first magnetic layer 21 and the second magnetic layer 22 are in contact with each other. The configuration other than this in the third condition CH3 is the same as the configuration in the first condition CH1.

[0257] Figure 15 The horizontal axis is the time tm. At the first moment tm1, the polarity of the recording current Iw is reversed. Figure 15 The vertical axis is the parameter P1 corresponding to the amount of magnetization reversal. In the first condition CH1, the second condition CH2, and the third condition CH3, the parameter P1 corresponds to the amount of magnetization reversal existing between the first magnetic pole 31 and the second magnetic pole 32.

[0258] In Figure 15 the characteristics PM of the magnetization orientation of the first magnetic pole 31 are also illustrated. Regarding the characteristics PM, the parameter P1 corresponds to the magnetization orientation of the first magnetic pole 31. In Figure 15In the example, at the first time tm1 (when the time tm is 0.60 ns), the polarity inversion of the recording current Iw is recorded. At the time tm of 0.62 ns, the orientation of the magnetization of the first magnetic pole 31 starts to change. At the time tm of 0.67 ns, the change in the orientation of the magnetization of the first magnetic pole 31 substantially ends.

[0259] As Figure 15 shown, in the second condition CH2, the absolute value of the parameter P1 is small. In the second condition CH2, the magnetization existing between the first magnetic pole 31 and the second magnetic pole 32 does not clearly invert with respect to the magnetization of the first magnetic pole 31.

[0260] As Figure 15 shown, it can be seen that: in the first condition CH1 and the third condition CH3, the magnetization existing between the first magnetic pole 31 and the second magnetic pole 32 substantially inverts with respect to the magnetization of the first magnetic pole 31. The change in the parameter P1 in the first condition CH1 is faster than the change in the parameter P1 in the third condition CH3. In the first condition CH1, high-speed magnetization inversion can be obtained. In the first condition CH1, the magnetization of the first magnetic layer 21 changes rapidly, so high followability can be obtained with respect to the change in the magnetization of the first magnetic pole 31. In the first condition CH1, for example, under practical use conditions, the BER (Bit Error Rate) can be effectively reduced.

[0261] In the second embodiment, the BER can be effectively reduced, and the recording gap capable of achieving good recording can be reduced. According to the second embodiment, a magnetic recording device capable of achieving an increase in recording density can be provided.

[0262] In the second embodiment, high recording ability can be obtained at a high frequency during high-speed recording operation. The recording density can be increased more effectively.

[0263] Figure 16 is a schematic cross-sectional view illustrating a part of the magnetic recording device of the second embodiment.

[0264] Figure 16 The magnetic head 110A is illustrated.

[0265] As Figure 16 shown, the first magnetic layer 21 has a thickness t21. The second magnetic layer 22 has a thickness t22. The third magnetic layer 23 has a thickness t23. The first non-magnetic layer 41 has a thickness t41. The second non-magnetic layer 42 has a thickness t42. The third non-magnetic layer 43 has a thickness t43. The fourth non-magnetic layer 44 has a thickness t44. These thicknesses are the lengths along the first direction D1. As has been described, the first direction D1 may also be inclined with respect to the X-axis direction.

[0266] In the magnetic head 110A, the thickness t21 of the first magnetic layer 21 is, for example, 2 nm or more and 10 nm or less. By having the thickness t21 be 2 nm or more, for example, the magnetic field going to the magnetic recording medium 80 can be effectively increased. By having the thickness t21 be 8 nm or less, for example, efficient magnetization reversal can be easily obtained.

[0267] In the magnetic head 110A, the thickness t22 of the second magnetic layer 22 is, for example, 2 nm or more and 4 nm or less. If the thickness t22 is 2 nm or more, higher gain can be easily obtained during high-speed operation. By having the thickness t22 be 4 nm or less, stable operation can be easily obtained.

[0268] In the magnetic head 110A, the thickness t23 of the third magnetic layer 23 is, for example, 2 nm or more and 5 nm or less. If the thickness t23 is 2 nm or more, for example, the electrons in the third magnetic layer 23 are likely to spin. By having the thickness t23 be 5 nm or less, for example, the magnetization of the third magnetic layer 23 is likely to be stable.

[0269] In the magnetic head 110A, the thickness t41 of the first non-magnetic layer 41 is, for example, 1 nm or more and 5 nm or less. If the thickness t41 is within this range, for example, the electrons spin-polarized by the second magnetic pole 32 are likely to reach the first magnetic layer 21.

[0270] In the magnetic head 110A, the thickness t42 of the second non-magnetic layer 42 is, for example, 1 nm or more and 5 nm or less. By having the thickness t42 be within this range, for example, higher gain can be easily obtained.

[0271] In the magnetic head 110A, the thickness t43 of the third non-magnetic layer 43 is, for example, 1 nm or more and 5 nm or less. By having the thickness t43 be within this range, for example, the magnetization of the second magnetic layer 22 and the magnetization of the third magnetic layer 23 are likely to be stabilized with each other.

[0272] In the magnetic head 110A, the thickness t44 of the fourth non-magnetic layer 44 is, for example, 1 nm or more and 5 nm or less. By having the thickness t44 be within this range, for example, the magnetization of the third magnetic layer 23 is likely to be stable.

[0273] In the second embodiment, for example, the first non-magnetic layer 41 is in contact with the first magnetic layer 21 and the second magnetic pole 32. For example, the second non-magnetic layer 42 is in contact with the second magnetic layer 22 and the first magnetic layer 21. For example, the third non-magnetic layer 43 is in contact with the third magnetic layer 23 and the second magnetic layer 22. For example, the fourth non-magnetic layer 44 is in contact with the first magnetic pole 31 and the third magnetic layer 23.

[0274] Figure 17 It is a schematic cross-sectional view illustrating a part of the magnetic recording device of the second embodiment.

[0275] AsFigure 17 As shown, in the magnetic head 111A of the second embodiment, the fourth non-magnetic layer 44 is not provided. In the magnetic head 111A, the first magnetic pole 31 is in contact with the third magnetic layer 23. The other configurations in the magnetic head 111A may be the same as those of the magnetic head 110A.

[0276] In the magnetic head 111A, high-speed magnetization reversal can also be obtained. It is possible to effectively reduce BER and reduce the recording gap that can achieve good recording. According to the second embodiment, a magnetic recording device capable of increasing the recording density can be provided.

[0277] In the magnetic heads 110A and 111A, the third non-magnetic layer 43 preferably contains Cr. Thus, for example, it is easier to stabilize the magnetization of the second magnetic layer 22.

[0278] (Third Embodiment)

[0279] Hereinafter, an example of the third embodiment will be described. In the following description, the description of the same parts as those of the first embodiment will be appropriately omitted.

[0280] Figure 18 FIG. is a schematic cross-sectional view illustrating a part of the magnetic recording device of the third embodiment.

[0281] As Figure 18 shown, the magnetic recording device 210 of the third embodiment includes a magnetic head 120A, a magnetic recording medium 80, and a circuit 20D. In the magnetic head 120A, the laminate 20 also includes a first magnetic layer 21, a second magnetic layer 22, a third magnetic layer 23, a first non-magnetic layer 41, a second non-magnetic layer 42, and a third non-magnetic layer 43. In this example, a fourth non-magnetic layer 44 is provided. In the magnetic head 120A, the second magnetic layer 22 is also disposed between the first magnetic pole 31 and the first magnetic layer 21. The third magnetic layer 23 is disposed between the first magnetic pole 31 and the second magnetic layer 22. The first non-magnetic layer 41 is disposed between the first magnetic layer 21 and the second magnetic pole 32. The second non-magnetic layer 42 is disposed between the second magnetic layer 22 and the first magnetic layer 21. The third non-magnetic layer 43 is disposed between the third magnetic layer 23 and the second magnetic layer 22. When the fourth non-magnetic layer 44 is provided, the fourth non-magnetic layer 44 is disposed between the first magnetic pole 31 and the third magnetic layer 23.

[0282] In the magnetic head 120A, the first magnetic layer 21 contains a first element including at least one of Fe, Co, and Ni and a second element including at least one selected from the group consisting of Cr, V, Mn, Ti, and Sc. The first magnetic layer 21 has, for example, negative polarization. The concentration of the second element in the first magnetic layer 21 is, for example, 1 atomic % or more and 80 atomic % or less.

[0283] In the magnetic head 120A, the second magnetic layer 22 contains at least one of Fe, Co, and Ni. The second magnetic layer 22 substantially does not contain the above-described second element. Alternatively, the concentration of the second element in the second magnetic layer 22 is lower than the concentration of the second element in the first magnetic layer 21. The second magnetic layer 22 has, for example, a positive polarization.

[0284] In the magnetic head 120A, the third magnetic layer 23 contains a third element including at least one of Fe, Co, and Ni and a fourth element including at least one selected from the group consisting of Cr, V, Mn, Ti, and Sc. The third magnetic layer 23 has, for example, a negative polarization. The concentration of the fourth element in the third magnetic layer 23 is, for example, 1 atomic % or more and 80 atomic % or less. The second magnetic layer 22 substantially does not contain the above-described fourth element. Alternatively, the concentration of the fourth element in the second magnetic layer 22 is lower than the concentration of the fourth element in the third magnetic layer 23.

[0285] In the magnetic head 120A, for example, the first nonmagnetic layer 41 contains at least one selected from the group consisting of Cu, Ag, Au, Al, and Cr. In the magnetic head 120A, the first nonmagnetic layer 41 functions, for example, as a layer that allows polarized spins to propagate.

[0286] In the magnetic head 120A, for example, the second nonmagnetic layer 42 contains at least one selected from the group consisting of Cu, Ag, Au, Al, and Cr. In the magnetic head 120A, the second nonmagnetic layer 42 functions, for example, as a layer that allows polarized spins to propagate.

[0287] In the magnetic head 120A, for example, the third nonmagnetic layer 43 contains at least one selected from the group consisting of Cu, Ag, Au, Al, and Cr. In the magnetic head 120A, the third nonmagnetic layer 43 functions, for example, as a layer that allows polarized spins to propagate.

[0288] In the magnetic head 120A, a fourth nonmagnetic layer 44 may be provided between the first magnetic pole 31 and the third magnetic layer 23. The fourth nonmagnetic layer 44 contains, for example, at least one selected from the group consisting of Cu, Ag, Au, Al, and Cr. In the magnetic head 120A, the fourth nonmagnetic layer 44 functions, for example, as a layer that allows polarized spins to propagate.

[0289] For example, the first nonmagnetic layer 41 may also be in contact with the first magnetic layer 21 and the second magnetic pole 32. The second nonmagnetic layer 42 may also be in contact with the second magnetic layer 22 and the first magnetic layer 21. The third nonmagnetic layer 43 may also be in contact with the third magnetic layer 23 and the second magnetic layer 22. The fourth nonmagnetic layer 44 may also be in contact with the first magnetic pole 31 and the third magnetic layer 23.

[0290] In the magnetic head 120A as well, it is also possible to implement with respect to Figure 13 (a) andFigure 13 (b) The described operation. Also in the magnetic head 120A, as Figure 13 (b) shows, when the current jc1 flowing into the laminate 20 is the first current i1, the resistance Rz2 of the laminate 20 is the first resistance R1. The first current i1 is within the first current range ir1.

[0291] Also in the magnetic head 120A, as Figure 13 (b) shows, when the current jc1 flowing into the laminate 20 is the second current i2, the resistance Rz2 of the laminate 20 is the second resistance R2. The second current i2 is larger than the first current i1. The second current i2 is within the second current range ir2. The second resistance R2 is higher than the first resistance R1.

[0292] At the third current i3 between the first current i1 and the second current i2, the resistance Rz2 of the laminate 20 is the third resistance R3. The third current i3 is within the third current range ir3.

[0293] Also in the magnetic head 120A, for example, when the current jc1 is the first current i1 or the second current i2, the resistance Rz2 does not substantially oscillate. For example, when the current jc1 is the third current i3, the resistance Rz2 oscillates. The first current i1, the second current i2, and the third current i3 have a direction from the first magnetic layer 21 to the second magnetic layer 22.

[0294] In the third embodiment, in the recording operation of recording information on the magnetic recording medium 80 using the magnetic head 120A, the circuit 20D can supply the above-described second current i2 to the laminate 20. By performing the recording operation of supplying the recording current Iw from the recording circuit 30D to the coil while supplying the second current i2 as described above, the amount of the recording magnetic field from the first magnetic pole 31 to the magnetic recording medium 80 can be increased compared to the case of performing the recording operation without supplying the second current i2. The recording gap that can achieve good recording can be reduced. According to the third embodiment, a magnetic recording device capable of achieving an increase in recording density can be provided.

[0295] Hereinafter, examples of the characteristics of the magnetic recording device will be described.

[0296] Figure 19 It is a schematic diagram illustrating the characteristics of the magnetic recording device.

[0297] Figure 19 The simulation results of the characteristics of the magnetic head including the laminate 20 having the fourth condition CH4, the fifth condition CH5, and the sixth condition CH6 are illustrated. In the fourth condition CH4, the configuration of the above-described magnetic head 120A is applied. That is, the second non-magnetic layer 42 is Cu, and the second non-magnetic layer 42, for example, propagates the polarized spin.

[0298] In the fifth condition CH5, the second non-magnetic layer 42 is Ta, and the second non-magnetic layer 42, for example, attenuates the polarized spins. The other configurations in the fifth condition CH5 are the same as those in the fourth condition CH4.

[0299] In the sixth condition CH6, the second non-magnetic layer 42 is not provided, and the first magnetic layer 21 and the second magnetic layer 22 are in contact with each other. The other configurations in the sixth condition CH6 are the same as those in the fourth condition CH4.

[0300] Figure 19 The horizontal axis is the time tm. At the first moment tm1 (refer to Figure 15 : when the time tm is 0.60 ns), the polarity of the recording current Iw is reversed. Figure 19 The vertical axis is the parameter P1 corresponding to the amount of magnetization reversal. In the fourth condition CH4, the fifth condition CH5, and the sixth condition CH6, the parameter P1 corresponds to the amount of magnetization reversal existing between the first magnetic pole 31 and the second magnetic pole 32.

[0301] In Figure 19 the characteristics PM of the magnetization orientation of the first magnetic pole 31 are also illustrated. Regarding the characteristics PM, the parameter P1 corresponds to the magnetization orientation of the first magnetic pole 31. In Figure 19 the example, at the first moment tm1 (when the time tm is 0.60 ns), the polarity of the recording current Iw is reversed. When the time tm is 0.62 ns, the magnetization orientation of the first magnetic pole 31 starts to change. When the time tm is 0.67 ns, the change in the magnetization orientation of the first magnetic pole 31 substantially ends.

[0302] As Figure 19 shown, in the fourth condition CH4, compared with the fifth condition CH5 and the sixth condition CH6, the parameter P1 is larger after the time tm is 0.7 ns. In the fourth condition CH4, the magnetization existing between the first magnetic pole 31 and the second magnetic pole 32 is substantially reversed with respect to the magnetization of the first magnetic pole 31. In the fourth condition CH4, a magnetic body with a large volume of magnetization that can be reversely rotated at high speed can be reversed. In the fourth condition CH4, in particular, the OW (Over Write) characteristics in magnetic recording can be improved.

[0303] In the third embodiment, the configuration of the above magnetic head 120A is applied. As a result, for example, the recording ability is effectively improved even at a relatively high recording frequency, and the recording characteristics are improved. According to the second embodiment, a magnetic recording device capable of achieving an increase in recording density can be provided.

[0304] In the magnetic head 120A, the first to third magnetic layers 21 to 23 respectively have thicknesses t21 to t23 (refer to Figure 16)。In the magnetic head 120A, the first to fourth non-magnetic layers 41 to 44 have thicknesses t41 to t44 (refer to Figure 16 ).

[0305] In the magnetic head 120A, the thickness t21 of the first magnetic layer 21 is, for example, 2 nm or more and 10 nm or less. By having the thickness t21 of 2 nm or more, for example, the magnetic field going to the magnetic recording medium 80 can be effectively increased. By having the thickness t21 of 8 nm or less, for example, efficient magnetization reversal can be easily obtained.

[0306] In the magnetic head 120A, the thickness t22 of the second magnetic layer 22 is, for example, 2 nm or more and 4 nm or less. If the thickness t22 is 2 nm or more, higher gain can be easily obtained during high-speed operation. By having the thickness t22 of 4 nm or less, stable operation can be easily obtained.

[0307] In the magnetic head 120A, the thickness t23 of the third magnetic layer 23 is, for example, 2 nm or more and 5 nm or less. If the thickness t23 is 2 nm or more, for example, the electrons in the third magnetic layer 23 are easily spin-polarized. By having the thickness t23 of 5 nm or less, for example, the magnetization of the third magnetic layer 23 is easily stabilized.

[0308] In the magnetic head 120A, the thickness t41 of the first non-magnetic layer 41 is, for example, 1 nm or more and 5 nm or less. If the thickness t41 is within this range, for example, spin can be effectively propagated.

[0309] In the magnetic head 120A, the thickness t42 of the second non-magnetic layer 42 is, for example, 1 nm or more and 5 nm or less. If the thickness t42 is within this range, for example, spin can be effectively propagated.

[0310] In the magnetic head 120A, the thickness t43 of the third non-magnetic layer 43 is, for example, 1 nm or more and 5 nm or less. If the thickness t43 is within this range, for example, spin can be effectively propagated.

[0311] In the magnetic head 120A, the thickness t44 of the fourth non-magnetic layer 44 is, for example, 1 nm or more and 5 nm or less. If the thickness t44 is within this range, for example, spin can be effectively propagated.

[0312] Figure 20 is a schematic cross-sectional view showing a part of the magnetic recording device illustrating the third embodiment.

[0313] As Figure 20 shown, in the magnetic head 121A of the third embodiment, the fourth non-magnetic layer 44 is not provided. In the magnetic head 121A, the first magnetic pole 31 is in contact with the third magnetic layer 23. Other configurations in the magnetic head 121A can be the same as those of the magnetic head 120A.

[0314] Also in the magnetic head 121A, the magnetization existing between the first magnetic pole 31 and the second magnetic pole 32 is reversed with respect to the magnetization of the first magnetic pole 31. It is possible to reverse a magnetic body with a large volume of magnetism that reverses at high speed. According to the second embodiment, it is possible to provide a magnetic recording device capable of achieving an increase in recording density.

[0315] In the magnetic head 120A and the magnetic head 121A, the second non-magnetic layer 42 and the third non-magnetic layer 43 preferably contain Cr. Thus, for example, it is easier to improve the amount of spin propagated.

[0316] The second embodiment and the third embodiment may also include the following configurations (for example, technical solutions).

[0317] (Configuration A1)

[0318] A magnetic head, comprising:

[0319] A first magnetic pole;

[0320] A second magnetic pole; and

[0321] A laminate provided between the first magnetic pole and the second magnetic pole,

[0322] The laminate includes:

[0323] A first magnetic layer;

[0324] A second magnetic layer provided between the first magnetic pole and the first magnetic layer;

[0325] A third magnetic layer provided between the first magnetic pole and the second magnetic layer;

[0326] A first non-magnetic layer provided between the first magnetic layer and the second magnetic pole;

[0327] A second non-magnetic layer provided between the second magnetic layer and the first magnetic layer; and

[0328] A third non-magnetic layer provided between the third magnetic layer and the second magnetic layer,

[0329] The first magnetic layer contains at least one of Fe, Co, and Ni,

[0330] The second magnetic layer contains at least one of Fe, Co, and Ni,

[0331] The third magnetic layer contains a first element including at least one of Fe, Co, and Ni and a second element including at least one selected from the group consisting of Cr, V, Mn, Ti, and Sc, and the first magnetic layer and the second magnetic layer do not contain the second element, or the concentration of the second element in the first magnetic layer and the second magnetic layer is lower than the concentration of the second element in the third magnetic layer.

[0332] The first non-magnetic layer contains at least one selected from the group consisting of Cu, Ag, Au, Al, and Cr.

[0333] The second non-magnetic layer contains at least one selected from the group consisting of Ta, Pt, W, Mo, Ir, Ru, Tb, Rh, Cr, and Pd.

[0334] The third non-magnetic layer contains at least one selected from the group consisting of Cu, Ag, Au, Al, and Cr.

[0335] (Constitution A2)

[0336] The magnetic head according to Constitution A1

[0337] The third non-magnetic layer contains Cr.

[0338] (Constitution A3)

[0339] A magnetic head includes:

[0340] A first magnetic pole;

[0341] A second magnetic pole; and

[0342] A laminate disposed between the first magnetic pole and the second magnetic pole

[0343] The laminate includes:

[0344] A first magnetic layer;

[0345] A second magnetic layer disposed between the first magnetic pole and the first magnetic layer;

[0346] A third magnetic layer disposed between the first magnetic pole and the second magnetic layer;

[0347] A first non-magnetic layer disposed between the first magnetic layer and the second magnetic pole;

[0348] A second non-magnetic layer disposed between the second magnetic layer and the first magnetic layer; and

[0349] A third non-magnetic layer disposed between the third magnetic layer and the second magnetic layer

[0350] The first magnetic layer contains a first element including at least one of Fe, Co, and Ni and a second element including at least one selected from the group consisting of Cr, V, Mn, Ti, and Sc.

[0351] The second magnetic layer contains at least one of Fe, Co, and Ni, the second magnetic layer does not contain the second element, or the concentration of the second element in the second magnetic layer is lower than the concentration of the second element in the first magnetic layer.

[0352] The third magnetic layer contains a third element including at least one of Fe, Co, and Ni and a fourth element including at least one selected from the group consisting of Cr, V, Mn, Ti, and Sc, the second magnetic layer does not contain the fourth element, or the concentration of the fourth element in the second magnetic layer is lower than the concentration of the fourth element in the third magnetic layer.

[0353] The first non-magnetic layer contains at least one selected from the group consisting of Cu, Ag, Au, Al, and Cr.

[0354] The second non-magnetic layer contains at least one selected from the group consisting of Cu, Ag, Au, Al, and Cr.

[0355] The third non-magnetic layer contains at least one selected from the group consisting of Cu, Ag, Au, Al, and Cr.

[0356] (Constitution A4)

[0357] The magnetic head according to Constitution A3.

[0358] The second non-magnetic layer and the third non-magnetic layer contain Cr.

[0359] (Constitution A5)

[0360] The magnetic head according to any one of Constitutions A1 to A4.

[0361] The first non-magnetic layer is in contact with the first magnetic layer and the second magnetic pole.

[0362] The second non-magnetic layer is in contact with the second magnetic layer and the first magnetic layer.

[0363] The third non-magnetic layer is in contact with the third magnetic layer and the second magnetic layer.

[0364] (Constitution A6)

[0365] The magnetic head according to any one of Constitutions A1 to A5.

[0366] The first magnetic pole is in contact with the third magnetic layer.

[0367] (Constitution A7)

[0368] The magnetic head according to any one of Constitutions A1 to A6,

[0369] The laminate further includes a fourth non-magnetic layer,

[0370] The fourth non-magnetic layer is provided between the first magnetic pole and the third magnetic layer,

[0371] The fourth non-magnetic layer contains at least one selected from the group consisting of Cu, Ag, Au, Al, and Cr.

[0372] (Constitution A8)

[0373] The magnetic head according to Constitution A7,

[0374] The fourth non-magnetic layer is in contact with the first magnetic pole and the third magnetic layer.

[0375] (Constitution A9)

[0376] The magnetic head according to Constitution A7 or A8,

[0377] The thickness of the fourth non-magnetic layer is 1 nm or more and 5 nm or less.

[0378] (Constitution A10)

[0379] The magnetic head according to any one of Constitutions A1 to A9,

[0380] The second current has a direction from the first magnetic layer to the second magnetic layer.

[0381] (Constitution A11)

[0382] The magnetic head according to any one of Constitutions A1 to A10,

[0383] The thickness of the first non-magnetic layer is 1 nm or more and 5 nm or less.

[0384] (Constitution A12)

[0385] The magnetic head according to any one of Constitutions A1 to A11,

[0386] The thickness of the second non-magnetic layer is 1 nm or more and 5 nm or less.

[0387] (Constitution A13)

[0388] The magnetic head according to any one of Constitutions A1 to A12,

[0389] The thickness of the third non-magnetic layer is 1 nm or more and 5 nm or less.

[0390] (Configuration A14)

[0391] The magnetic head according to any one of Configurations A1 to A13,

[0392] The thickness of the first magnetic layer is 2 nm or more and 8 nm or less.

[0393] (Configuration A15)

[0394] The magnetic head according to any one of Configurations A1 to A14,

[0395] The thickness of the second magnetic layer is 2 nm or more and 5 nm or less.

[0396] (Configuration A16)

[0397] The magnetic head according to any one of Configurations A1 to A15,

[0398] The thickness of the third magnetic layer is 2 nm or more and 5 nm or less.

[0399] (Configuration A17)

[0400] A magnetic recording device includes:

[0401] The magnetic head according to any one of Configurations A1 to A16;

[0402] A magnetic recording medium; and

[0403] A circuit,

[0404] The resistance of the laminate when the current flowing through the laminate is the first current is the first resistance,

[0405] When the current flowing through the laminate is a second current greater than the first current, the resistance of the laminate is a second resistance higher than the first resistance,

[0406] When the current flowing through the laminate is a third current between the first current and the second current, the resistance of the laminate oscillates,

[0407] In a recording operation of recording information on the magnetic recording medium using the magnetic head, the circuit can supply the second current to the laminate.

[0408] Figure 21 It is a graph showing the characteristics of the magnetic layer included in the magnetic head.

[0409] Figure 21It is the parameter P1 corresponding to the amount of magnetization reversal when the composition of the third magnetic layer 23 is changed in the structure of the magnetic head 110A. In this example, the composition ratio y is 20 atm%, and the composition ratio x of Co is changed. The second element E is Cr. Figure 21 The horizontal axis of Figure 21 is the composition ratio x. The vertical axis is the parameter P1. In this example, the parameter P1 is the value 0.1 ns after the polarity of the recording current Iw is reversed. In Figure 21 , the case where the parameter P1 is positive and large corresponds to high-speed magnetization reversal. In Figure 21 , when the parameter P1 is positive and large, a high recording density can be obtained. From Figure 21 , it can be seen that when the composition ratio x is 10 atm% or more and 50 atm% or less, a large parameter P1 can be obtained. Under this condition, for example, magnetization can be reversed at high speed, and high-efficiency recording can be performed. Therefore, the recording density can be easily increased. The composition ratio x is more preferably 25 atm% or more and 35 atm% or less. It is easy to stably obtain the following high-speed reversal.

[0410] In the magnetic heads (magnetic heads 110A and 111A) of the second embodiment, the third magnetic layer 23 (for example, a magnetic layer having negative spin polarization) contains (Fe 100-x Co x ) 100-y E y (10 atm% ≤ x ≤ 50 atm%, 10 atm% ≤ y ≤ 90 atm%). The second element E includes at least one selected from the group consisting of Cr, V, Mn, Ti, and Sc. The composition ratio x and the composition ratio y are atomic percentages (atm%). Thus, for example, it is easy to obtain a high saturation magnetic flux density and a negative and large absolute value of spin polarization. High-efficiency magnetization reversal can be obtained. An increase in recording density can be achieved.

[0411] Figure 22 It is a graph showing the characteristics of the magnetic layers included in the magnetic head.

[0412] Figure 22 It is the parameter P1 corresponding to the amount of magnetization reversal when the compositions of the first magnetic layer 21 and the third magnetic layer 23 are changed in the structure of the magnetic head 120A. In this example, the composition ratio y is 20 atm%, and the composition ratio x of Co is changed. The second element E is Cr. In this example, the composition ratio x and the composition ratio y in the first magnetic layer 21 are the same as the composition ratio x and the composition ratio y in the third magnetic layer 23, respectively. Figure 22 The horizontal axis of Figure 22 is the composition ratio x. The vertical axis is the parameter P1. In Figure 22 , the parameter P1 is the value 0.1 ns after the polarity of the recording current Iw is reversed. From Figure 22It can be seen that when the composition ratio x is 10 atm% or more and 50 atm% or less, a large parameter P1 can be obtained. Under this condition, for example, magnetization can be reversely rotated at high speed, and high-efficiency recording can be performed. Therefore, the recording density can be easily increased. The composition ratio x is more preferably 25 atm% or more and 35 atm% or less. It is easy to stably obtain the following high-speed reverse rotation.

[0413] In the magnetic heads (magnetic heads 120A and 121A) of the third embodiment, the first magnetic layer 21 and the third magnetic layer 23 (for example, a magnetic layer having negative spin polarization) preferably contain the above-mentioned (Fe 100-x Co x ) 100-y E y (10 atm% ≤ x ≤ 50 atm%, 10 atm% ≤ y ≤ 90 atm%). Thus, for example, it is easy to obtain a high saturation magnetic flux density and a negative spin polarization with a large absolute value. High-efficiency magnetization reversal can be obtained. An increase in the recording density can be achieved. The composition ratio of the third magnetic layer 23 may also be different from that of the first magnetic layer 21. For example, the third magnetic layer 23 contains (Fe 100-x1 Co x1 ) 100-y1 EX y1 (10 atm% ≤ x1 ≤ 50 atm%, 10 atm% ≤ y1 ≤ 90 atm%), and the fourth element EX includes at least one selected from the group consisting of Cr, V, Mn, Ti, and Sc.

[0414] (Fourth Embodiment)

[0415] Figure 23 is a schematic cross-sectional view illustrating the magnetic head of the fourth embodiment.

[0416] The magnetic recording device 210 of the fourth embodiment also includes a magnetic head 110B and a circuit 20D. The magnetic recording device 210 may also include a magnetic recording medium 80. In the magnetic recording device 210, for example, at least a recording operation is performed. In the recording operation, the magnetic head 110B is used to record information on the magnetic recording medium 80.

[0417] In this example, the circuit 20D (refer to Figure 2 ) is also electrically connected to the laminate 20S. In this example, the laminate 20S is electrically connected to the first magnetic pole 31 and the second magnetic pole 32. The magnetic head 110B is provided with a first terminal T1 and a second terminal T2. The first terminal T1 is electrically connected to the laminate 20S via the first wiring W1 and the first magnetic pole 31. The second terminal T2 is electrically connected to the laminate 20S via the second wiring W2 and the second magnetic pole 32. A current Is (for example, a direct current) is supplied from the circuit 20D to the laminate 20S, for example.

[0418] AsFigure 23 As shown, the laminate 20S includes a first magnetic layer 21, a second magnetic layer 22, a third magnetic layer 23, a first non-magnetic layer 41, a second non-magnetic layer 42, and a third non-magnetic layer 43.

[0419] The first magnetic layer 21 is between the first magnetic pole 31 and the second magnetic pole 32. The second magnetic layer 22 is disposed between the first magnetic pole 31 and the first magnetic layer 21. The third magnetic layer 23 is disposed between the first magnetic pole 31 and the second magnetic layer 22.

[0420] The first non-magnetic layer 41 is disposed between the second magnetic layer 22 and the first magnetic layer 21. The first non-magnetic layer 41 contains Cu. The first non-magnetic layer 41 is, for example, a Cu layer.

[0421] The second non-magnetic layer 42 is disposed between the third magnetic layer 23 and the second magnetic layer 22. The third non-magnetic layer 43 is disposed between the first magnetic pole 31 and the third magnetic layer 23.

[0422] In this example, the first magnetic layer 21 is in contact with the second magnetic pole 32. The first non-magnetic layer 41 is in contact with the second magnetic layer 22 and the first magnetic layer 21. The second non-magnetic layer 42 is in contact with the third magnetic layer 23 and the second magnetic layer 22. The third non-magnetic layer 43 is in contact with the first magnetic pole 31 and the third magnetic layer 23.

[0423] The second magnetic layer 22 includes a first magnetic region 22a and a second magnetic region 22b. The second magnetic region 22b is between the second non-magnetic layer 42 and the first magnetic region 22a. The first magnetic region 22a is the region on the first non-magnetic layer 41 side. The second magnetic region 22b is the region on the second non-magnetic layer 42 side. For example, the first magnetic region 22a is in contact with the first non-magnetic layer 41. For example, the second magnetic region 22b is in contact with the second non-magnetic layer 42.

[0424] The first magnetic region 22a contains a first element including at least one of Fe, Co, and Ni. The second magnetic region 22b contains the first element and a second element. The second element includes at least one selected from the group consisting of Cr, V, Mn, Ti, and Sc. When the second magnetic region 22b contains such a material, for example, the second magnetic region 22b has a negative spin polarization. The first magnetic region 22a does not contain the second element. Or, the concentration of the second element in the first magnetic region 22a is lower than the concentration of the second element in the second magnetic region 22b. When the first magnetic region 22a contains such a material, the first magnetic region 22a has a positive spin polarization.

[0425] In one example, the concentration of the second element in the first magnetic region 22a is substantially 0 atomic %. For example, the concentration of the second element in the first magnetic region 22a may also be 0 atomic % or more and less than 20 atomic %. For example, the concentration of the second element in the second magnetic region 22b is 20 atomic % or more and 50% or less.

[0426] As already described, current Is is supplied from circuit 20D to laminate 20S (refer to Figure 2 ). As Figure 23 shown, the current jc1 (current Is) flowing in laminate 20S has a direction from the first magnetic layer 21 to the third magnetic layer 23. The electron flow je1 has a direction from the third magnetic layer 23 to the first magnetic layer 21.

[0427] For example, when no current jc1 is supplied to laminate 20S, the magnetization directions of the first magnetic layer 21, the second magnetic layer 22, and the third magnetic layer 23 are substantially the same as the magnetization directions of the first magnetic pole 31 and the second magnetic pole 32. A part of the magnetic field (recording magnetic field) coming out from the first magnetic pole 31 goes to the magnetic recording medium 80. On the other hand, another part of the magnetic field (recording magnetic field) coming out from the first magnetic pole 31 does not go to the magnetic recording medium 80 and enters the second magnetic pole 32 through laminate 20S. Therefore, the proportion of the recording magnetic field coming out from the first magnetic pole 31 that goes to the magnetic recording medium 80 is small.

[0428] If current jc1 is supplied to laminate 20S, then for example, the magnetization directions of at least a part of laminate 20S (for example, at least a part of the second magnetic layer 22 and the third magnetic layer 23) are reversed with respect to the magnetization directions of the first magnetic pole 31 and the second magnetic pole 32. Thereby, the magnetic field (recording magnetic field) coming out from the first magnetic pole 31 hardly goes to laminate 20S. Therefore, the proportion of the recording magnetic field coming out from the first magnetic pole 31 that goes to the magnetic recording medium 80 becomes higher than the case where no current jc1 is supplied to laminate 20S. The recording magnetic field coming out from the first magnetic pole 31 is effectively applied to the magnetic recording medium 80.

[0429] If the distance (recording gap) between the first magnetic pole 31 and the second magnetic pole 32 becomes shorter, this phenomenon becomes more remarkable. By using such a laminate 20S, good recording can be performed even when the recording gap becomes smaller. According to the fourth embodiment, the recording gap at which good recording can be achieved can be reduced. According to the fourth embodiment, a magnetic recording device capable of increasing the recording density can be provided.

[0430] On the other hand, there is MAMR (Microwave Assisted Magnetic Recording) in which a high-frequency magnetic field generated from a laminate including a plurality of magnetic layers is applied to the magnetic recording medium 80 to locally control the magnetic characteristics of the magnetic recording medium 80 for recording. In MAMR, a high-frequency magnetic field is generated by the oscillation of the magnetization of the magnetic layer.

[0431] In contrast, in the fourth embodiment, for example, the magnetization of at least a part of the laminate 20S is reversed with respect to the magnetization of the first magnetic pole 31 and the magnetization of the second magnetic pole 32. By an operation different from MAMR, the magnetic field coming out from the first magnetic pole 31 is efficiently applied to the magnetic recording medium 80.

[0432] In the fourth embodiment, the second magnetic layer 22 includes a first magnetic region 22a and a second magnetic region 22b. With such a configuration, the recording magnetic field coming out from the first magnetic pole 31 is more stably and effectively applied to the magnetic recording medium 80.

[0433] Hereinafter, an example of the experimental results in the case where the second magnetic layer 22 does not include the first magnetic region 22a and the second magnetic region 22b will be described.

[0434] Figure 24 It is a schematic cross-sectional view illustrating an experimental sample.

[0435] Figure 25 It is a graph illustrating the experimental results.

[0436] As Figure 24 shown, the experimental sample includes a first magnetic layer 21, a second magnetic layer 22, and a first non-magnetic layer 41. The first non-magnetic layer 41 is between the first magnetic layer 21 and the second magnetic layer 22. The first magnetic layer 21 is a FeCo layer. The first non-magnetic layer 41 is a Cu layer. In the first sample, the second magnetic layer 22 contains FeCr. In the second sample, the second magnetic layer 22 contains FeCo. In the first sample, the second magnetic layer 22 has a negative spin polarization. In the second sample, the second magnetic layer 22 has a positive spin polarization.

[0437] While applying a magnetic field to such a sample, a current having an orientation from the first terminal TM1 to the second terminal TM2 is supplied to the sample. The magnetic field has an orientation from the second magnetic layer 22 to the first magnetic layer 21. The relationship between the change in the magnetization of the first magnetic layer 21 and the intensity of the magnetic field is investigated.

[0438] Figure 25 The horizontal axis of Figure 25 is the intensity H1 of the magnetic field. The vertical axis of Figure 25As shown, in the first sample SP1, the current density CD at which the magnetic field of the first magnetic layer 21 starts to change is low. In the second sample SP2, the current density CD at which the magnetic field of the first magnetic layer 21 starts to change is high. In the first sample SP1, it is considered that the magnetization of the first magnetic layer 21 is unstable.

[0439] In the first sample SP1, it is considered that the magnetization of the first magnetic layer 21 becomes unstable due to the action of the transmitted spin transfer torque (STT) from the second magnetic layer 22 having negative polarization on the first magnetic layer 21.

[0440] In the fourth embodiment, a first magnetic region 22a and a second magnetic region 22b are provided in the second magnetic layer 22. The first magnetic region 22a has, for example, positive spin polarization. Thus, the action of the STT on the first magnetic layer 21 can be suppressed, and the magnetization of the first magnetic layer 21 is stabilized. By stabilizing the magnetization of the first magnetic layer 21, it is considered that, for example, the magnetizations of the second magnetic layer 22 and the third magnetic layer 23 can be stably reversed by the STT from the first magnetic layer 21. Accordingly, in the fourth embodiment, the recording magnetic field emerging from the first magnetic pole 31 is more stably and effectively applied to the magnetic recording medium 80. A magnetic head capable of achieving an increase in recording density can be provided.

[0441] Hereinafter, an example of magnetization reversal will be described.

[0442] Figure 26 (a) to Figure 26 (c) are schematic diagrams illustrating the magnetic head of the fourth embodiment.

[0443] In these figures, the magnetizations of the first magnetic pole 31 and the second magnetic pole 32 have an orientation from the first magnetic pole 31 to the second magnetic pole 32.

[0444] As Figure 26 (a) shows, when the current jc1 is not supplied to the stack 20S, the magnetization 21M of the first magnetic layer 21, the magnetization 22M of the second magnetic layer 22, and the magnetization of the third magnetic layer 23 are the same as the orientations of the magnetizations of the first magnetic pole 31 and the second magnetic pole 32 (the orientation from the first magnetic pole 31 to the second magnetic pole 32). The orientation of the electron current je1 is from the second magnetic pole 32 to the first magnetic pole 31.

[0445] As Figure 26 (b) shows, when a current jc1 above the threshold is supplied to the stack 20S, the positive transmitted spin transfer torque S1 from the first magnetic region 22a acts on the first magnetic layer 21, and the magnetization 21M of the first magnetic layer 21 is stabilized.

[0446] As Figure 26As shown in (c), the magnetization 22M of the second magnetic layer 22 is reversed by the spin transfer torque S2 of the positive reflection from the first magnetic layer 21. The magnetization 23M of the third magnetic layer 23 is reversed by the spin transfer torque S3 of the negative reflection from the reversed magnetization 21M. Thus, for example, the magnetization 22M of the second magnetic layer 22 and the magnetization 23M of the third magnetic layer 23 are stably reversed with respect to the magnetization of the first magnetic pole 31 and the second magnetic pole 32. Thereby, the recording magnetic field coming out from the first magnetic pole 31 is effectively applied to the magnetic recording medium 80. A magnetic head capable of achieving an increase in recording density can be provided. The recording performance is improved.

[0447] In the fourth embodiment, the first magnetic layer 21 contains, for example, Fe and Co. The first magnetic layer 21 has, for example, a positive spin polarization.

[0448] In the magnetic head 110B, the third magnetic layer 23 contains, for example, the above-described first element and the above-described second element. The third magnetic layer 23 has, for example, a negative spin polarization. As will be described later, the third magnetic layer 23 may also have a positive spin polarization.

[0449] As already described, the first non-magnetic layer 41 contains Cu. Thereby, the spin transfer torque can be efficiently transmitted.

[0450] The second non-magnetic layer 42 contains, for example, Cu. The second non-magnetic layer 42 may also contain Cu and the above-described second element.

[0451] In Figure 23 the example, the third non-magnetic layer 43 contains, for example, at least one selected from the group consisting of Ta, Ru, and Cr.

[0452] As Figure 23 shown, in the magnetic head 110B, the first magnetic layer 21 has a thickness t21. The first magnetic region 22a has a thickness t22a. The second magnetic region 22b has a thickness t22b. The third magnetic layer 23 has a thickness t23. In the magnetic head 110B, the first to third non-magnetic layers 41 to 43 have thicknesses t41 to t43 (refer to Figure 23 ).

[0453] In the magnetic head 110B, the thickness t22a of the first magnetic region 22a is, for example, preferably 0.5 nm or more and 10 nm or less. By the thickness t22a being 0.5 nm or more, for example, the STT can be effectively reduced. By the thickness t22a being 10 nm or less, for example, an excessive increase in the reverse current can be suppressed, and for example, high reliability can be obtained. The thickness t22a may also be 0.3 nm or less. Thereby, the recording ability based on the reversal of magnetization is effectively improved.

[0454] The thickness t22b of the second magnetic region 22b is preferably, for example, 2 nm or more and 7 nm or less. When the thickness t22b is 2 nm or more, a large spin transfer torque can be obtained, for example, and the magnetization 23M of the third magnetic layer 23 can be effectively reversed by the action of the second magnetic region 22b. When the thickness t22b is 7 nm or less, the hardness of the second magnetic region 22b can be suppressed from becoming excessively high, for example. As a result, the processing of the laminate 20S becomes easy.

[0455] The thickness of the second magnetic layer 22 (for example, the sum of the thickness t22a and the thickness t22b) is preferably, for example, 3 nm or more and 10 nm or less.

[0456] The thickness t21 of the first magnetic layer 21 is preferably, for example, 1 nm or more and 3 nm or less. When the thickness t21 is 1 nm or more, the magnetization 21M of the first magnetic layer 21 becomes stable, for example. When the thickness t21 is 3 nm or less, the gap length (the distance between the first magnetic pole 31 and the second magnetic pole 32) can be suppressed from becoming excessively large, for example. For example, a high recording density can be easily obtained.

[0457] The thickness t23 of the third magnetic layer 23 is preferably, for example, 1 nm or more and 5 nm or less. When the thickness t23 is 1 nm or more, an extreme decrease in the magnetization of the third magnetic layer 23 can be suppressed, for example. When the thickness t23 is 5 nm or less, the reversal of the magnetization 23M of the third magnetic layer 23 becomes easy, for example.

[0458] The thickness t41 of the first non-magnetic layer 41 is preferably, for example, 1 nm or more and 5 nm or less. When the thickness t41 is 1 nm or more, the magnetic separation between the first magnetic layer 21 and the second magnetic layer 22 becomes stable, for example. When the thickness t41 is 5 nm or less, the processing of the laminate 20S becomes easy, for example.

[0459] The thickness t42 of the second non-magnetic layer 42 is preferably, for example, 1 nm or more and 5 nm or less. When the thickness t42 is 1 nm or more, the magnetic separation between the second magnetic layer 22 and the third magnetic layer 23 becomes stable, for example. When the thickness t42 is 5 nm or less, the processing of the laminate 20S becomes easy, for example.

[0460] In Figure 23 the example of, the thickness t43 of the third non-magnetic layer 43 is preferably, for example, 1 nm or more and 5 nm or less. When the thickness t43 is 1 nm or more, the magnetic separation on both sides in the X-axis direction of the third non-magnetic layer 43 becomes easy, for example. When the thickness t43 is 5 nm or less, the transfer of STT becomes easy, for example.

[0461] Figure 27 is a schematic cross-sectional view illustrating the magnetic head of the fourth embodiment.

[0462] As Figure 27 shown, in the magnetic head 111B of the fourth embodiment, the laminate 20S includes, in addition to the first to third magnetic layers 21 to 23 and the first to third non-magnetic layers 41 to 43, a fourth magnetic layer 24. In the magnetic head 111B, the third magnetic layer 23 has a positive spin polarization. In addition to the above, the configuration of the magnetic head 111B can be the same as that of the magnetic head 110B.

[0463] The fourth magnetic layer 24 is located between the first magnetic pole 31 and the third non-magnetic layer 43. The fourth magnetic layer 24 contains, for example, a first element and a second element. For example, the concentration of the second element in the fourth magnetic layer 24 is 20 atomic% or more and 50% or less. For example, the third magnetic layer 23 contains the above-mentioned first element. The third magnetic layer 23 is, for example, an FeCo layer. The third magnetic layer 23 does not contain the above-mentioned second element. Alternatively, the concentration of the second element in the third magnetic layer 23 is lower than the concentration of the second element in the second magnetic region 22b. In one example, the fourth magnetic layer 24 is in contact with the first magnetic pole 31 and is magnetically coupled to the first magnetic pole 31. For example, a layer that magnetically couples the first magnetic pole 31 and the fourth magnetic layer 24 may be provided between the first magnetic pole 31 and the fourth magnetic layer 24.

[0464] In such a magnetic head 111B, the magnetization 21M of the first magnetic layer 21 also becomes stable. For example, the magnetization of the second magnetic layer 22 and the magnetization 23M of the third magnetic layer 23 can be stably reversed. The recording magnetic field emerging from the first magnetic pole 31 is effectively applied to the magnetic recording medium 80. A magnetic head capable of achieving an increase in recording density can be provided.

[0465] In Figure 27 the example, the third non-magnetic layer 43 contains, for example, Cu. The third non-magnetic layer 43 may also contain the second element. The thickness t43 of the third non-magnetic layer 43 is preferably, for example, 1 nm or more and 5 nm or less.

[0466] In Figure 27 the example, the thickness t24 of the fourth magnetic layer 24 is preferably, for example, 2 nm or more and 5 nm or less. By having the thickness t24 of 2 nm or more, for example, a negative polarization can be stably obtained in the fourth magnetic layer 24. By having the thickness t24 of 5 nm or less, for example, an excessive increase in the gap length can be suppressed. A decrease in the steepness of the recording magnetic field can be suppressed. For example, a high recording density can be easily obtained.

[0467] Figure 28 is a schematic cross-sectional view illustrating the magnetic head of the fourth embodiment.

[0468] As Figure 28As shown, in the magnetic head 112B of the fourth embodiment as well, the laminate 20S includes, in addition to the first to third magnetic layers 21 to 23 and the first to third non-magnetic layers 41 to 43, a fourth magnetic layer 24 and a fourth non-magnetic layer 44. In the magnetic head 112B, the third magnetic layer 23 has a negative spin polarization. Other than the above, the configuration of the magnetic head 112B can be the same as that of the magnetic head 110B.

[0469] The fourth magnetic layer 24 is located between the first magnetic pole 31 and the third non-magnetic layer 43. The fourth magnetic layer 24 contains, for example, a first element and a second element. The concentration of the second element in the fourth magnetic layer 24 is 20 atomic % or more and 50% or less. For example, the third magnetic layer 23 contains a first element and a second element. For example, the concentration of the second element in the third magnetic layer 23 is 20 atomic % or more and 50% or less.

[0470] The fourth non-magnetic layer 44 is located between the first magnetic pole 31 and the fourth magnetic layer 24. The fourth non-magnetic layer 44 contains at least one selected from the group consisting of Ta, Ru, and Cr.

[0471] In such a magnetic head 112B as well, the magnetization 21M of the first magnetic layer 21 becomes stable. For example, the magnetization of the second magnetic layer 22 and the magnetization 23M of the third magnetic layer 23 can be stably reversed. The recording magnetic field emerging from the first magnetic pole 31 is effectively applied to the magnetic recording medium 80. A magnetic head capable of achieving an increase in recording density can be provided.

[0472] In Figure 28 the example of, the thickness t24 of the fourth magnetic layer 24 is preferably 1 nm or more and 5 nm or less, for example. By the thickness t24 being 1 nm or more, for example, the magnetic coupling between the magnetic pole 31 and the fourth magnetic layer 24 can be stably suppressed. For example, the transfer of STT between the magnetic pole 31 and the fourth magnetic layer 24 can be stably suppressed. By the thickness t24 being 5 nm or less, for example, an excessive increase in the gap length can be suppressed. A decrease in the steepness of the recording magnetic field can be suppressed. For example, a high recording density can be easily obtained.

[0473] In the fourth embodiment as well, for example, the characteristics described with respect to Figure 13 (a) and Figure 13 (b) can be obtained. If the current jc1 increases, the resistance Rz1 increases. The magnitude of the current jc1 can be divided into a first current range ir1, a second current range ir2, and a third current range ir3. The third current range ir3 is between the first current range ir1 and the second current range ir2.

[0474] In the first current range ir1 and the second current range ir2, the magnitude of the resistance Rz1 with respect to the current jc1 changes according to a quadratic function. This can be considered to be due to the temperature rise of the laminate 20S corresponding to the increase in the current jc1.

[0475] The change in the resistance Rz1 in the third current range ir3 is different from the influence of the temperature rise. It can be considered that the change in the resistance Rz1 in the third current range ir3 is caused by the magnetoresistance effect based on the reversal rate of the magnetization of the magnetic layer.

[0476] For example, when the influence of the quadratic function is removed from the resistance, in the first current range ir1, the resistance Rz2 is substantially constant. Alternatively, in the first current range ir1, the resistance Rz2 changes slowly compared to the third current range ir3. In the third current range ir3, the resistance Rz2 changes. In the second current range ir2, the resistance Rz2 is substantially constant. Alternatively, in the second current range ir2, the resistance Rz2 changes slowly compared to the third current range ir3.

[0477] For example, the resistance Rz2 of the laminate 20S when the current jc1 flowing through the laminate 20S is the first current i1 is the first resistance R1. The first current i1 is within the first current range ir1.

[0478] When the current jc1 flowing through the laminate 20S is the second current i2, the resistance Rz2 of the laminate 20S is the second resistance R2. The second current i2 is larger than the first current i1. The second current i2 is within the second current range ir2. The second resistance R2 is higher than the first resistance R1.

[0479] At the third current i3 between the first current i1 and the second current i2, the resistance Rz2 of the laminate 20S is the third resistance R3. The third current i3 is within the third current range ir3.

[0480] For example, when the current jc1 is the first current i1 or the second current i2, the resistance Rz2 does not substantially oscillate. For example, when the current jc1 is the third current i3, the resistance Rz2 oscillates. The first current i1, the second current i2, and the third current i3 have the orientation from the first magnetic layer 21 to the third magnetic layer 23.

[0481] Also in the fourth embodiment, for example, the characteristics described in Figure 14 (a) to Figure 14 (c) can be obtained. When the current jc1 is the third current i3, a peak p1 is observed at one frequency fp1. This peak corresponds to the generation of high-frequency oscillation in the laminate 20S.

[0482] When the current jc1 is the first current i1 or the second current i2, the peak p1 is not clearly observed. At these currents, magnetization oscillation effective for MAMR substantially does not occur.

[0483] Thus, when the current jc1 flowing through the laminate 20S is the third current i3 between the first current i1 and the second current i2, the resistance Rz2 of the laminate 20S oscillates.

[0484] In the fourth embodiment, the recording operation is performed using the laminate 20S having such characteristics.

[0485] In the recording operation of recording information on the magnetic recording medium 80 using the magnetic head of the fourth embodiment, the circuit 20D can supply the above-described second current i2 to the laminate 20S. By performing the recording operation of supplying the recording current Iw from the recording circuit 30D to the coil while supplying the second current i2 as described above, the amount of the recording magnetic field going from the first magnetic pole 31 to the magnetic recording medium 80 can be increased compared with the case where the recording operation is performed without supplying the second current i2. The recording gap that can achieve good recording can be reduced. According to the fourth embodiment, a magnetic recording device capable of improving the recording density can be provided.

[0486] The magnetic recording device 210 includes the magnetic head (for example, the magnetic head 110B) of the fourth embodiment and the circuit 20D capable of supplying the current jc1 (or the current Is) to the laminate 20S. The current jc1 has the orientation from the first magnetic layer 21 to the third magnetic layer 23. In the recording operation, the circuit 20D can supply the above-described second current i2 to the laminate 20S. The recording magnetic field coming out from the first magnetic pole 31 is effectively applied to the magnetic recording medium 80. A magnetic head capable of improving the recording density can be provided.

[0487] The fourth embodiment may also include the following configurations (for example, technical solutions).

[0488] (Configuration B1)

[0489] A magnetic head, comprising:

[0490] A first magnetic pole;

[0491] A second magnetic pole; and

[0492] A laminate disposed between the first magnetic pole and the second magnetic pole,

[0493] The laminate includes:

[0494] A first magnetic layer;

[0495] A second magnetic layer disposed between the first magnetic pole and the first magnetic layer;

[0496] The third magnetic layer is disposed between the first magnetic pole and the second magnetic layer;

[0497] The first non-magnetic layer is disposed between the second magnetic layer and the first magnetic layer and contains Cu;

[0498] The second non-magnetic layer is disposed between the third magnetic layer and the second magnetic layer; and

[0499] The third non-magnetic layer is disposed between the first magnetic pole and the third magnetic layer,

[0500] The second magnetic layer includes a first magnetic region and a second magnetic region, and the second magnetic region is between the second non-magnetic layer and the first magnetic region,

[0501] The first magnetic region contains a first element including at least one of Fe, Co, and Ni,

[0502] The second magnetic region contains the first element and a second element including at least one selected from the group consisting of Cr, V, Mn, Ti, and Sc,

[0503] The first magnetic region does not contain the second element, or the concentration of the second element in the first magnetic region is lower than the concentration of the second element in the second magnetic region.

[0504] (Constitution B2)

[0505] The magnetic head according to Constitution B1,

[0506] The concentration of the second element in the first magnetic region is 0 atomic % or more and less than 20 atomic %,

[0507] The concentration of the second element in the second magnetic region is 20 atomic % or more and 50% or less.

[0508] (Constitution B3)

[0509] The magnetic head according to Constitution B1 or B2,

[0510] The first magnetic layer contains Fe and Co.

[0511] (Constitution B4)

[0512] The magnetic head according to any one of Constitutions B1 to B3,

[0513] The second non-magnetic layer contains Cu.

[0514] (Constitution B5)

[0515] The magnetic head according to Constitution B4,

[0516] The second non-magnetic layer contains the second element.

[0517] (Constitution B6)

[0518] The magnetic head according to any one of Constitutions B1 to B5,

[0519] The third non-magnetic layer contains Cu.

[0520] (Constitution B7)

[0521] The magnetic head according to any one of Constitutions B1 to B6,

[0522] The third magnetic layer contains the first element and the second element.

[0523] (Constitution B8)

[0524] The magnetic head according to any one of Constitutions B1 to B6,

[0525] The laminate further includes a fourth magnetic layer,

[0526] The fourth magnetic layer is between the first magnetic pole and the third non-magnetic layer,

[0527] The third magnetic layer contains the first element,

[0528] The third magnetic layer does not contain the second element, or the concentration of the second element in the third magnetic layer is lower than the concentration of the second element in the second magnetic region.

[0529] (Constitution B9)

[0530] The magnetic head according to any one of Constitutions B1 to B6,

[0531] The laminate further includes a fourth magnetic layer,

[0532] The fourth magnetic layer is between the first magnetic pole and the third non-magnetic layer,

[0533] The fourth magnetic layer contains the first element and the second element,

[0534] The third magnetic layer contains the first element and the second element.

[0535] (Constitution B10)

[0536] The magnetic head according to any one of Constitutions B1 to B9,

[0537] The first magnetic region is in contact with the first non-magnetic layer,

[0538] The second magnetic region is in contact with the second non-magnetic layer.

[0539] (Constitution B11)

[0540] The magnetic head according to any one of Constitutions B1 to B10,

[0541] The thickness of the first magnetic region is 0.5 nm or more and 10 nm or less.

[0542] (Constitution B12)

[0543] The magnetic head according to any one of Constitutions B1 to B11,

[0544] The thickness of the second magnetic region is 1 nm or more and 7 nm or less.

[0545] (Constitution B13)

[0546] The magnetic head according to any one of Constitutions B1 to B12,

[0547] The thickness of the first magnetic layer is 1 nm or more and 3 nm or less.

[0548] (Constitution B14)

[0549] The magnetic head according to any one of Constitutions B1 to B13,

[0550] The thickness of the third magnetic layer is 1 nm or more and 5 nm or less.

[0551] (Constitution B15)

[0552] The magnetic head according to any one of Constitutions B1 to B14,

[0553] The thickness of the first non-magnetic layer is 1 nm or more and 5 nm or less.

[0554] (Constitution B16)

[0555] The magnetic head according to any one of Constitutions B1 to B15,

[0556] The thickness of the second non-magnetic layer is 1 nm or more and 5 nm or less.

[0557] (Constitution B17)

[0558] The magnetic head according to any one of Constitutions B1 to B16,

[0559] The thickness of the third non-magnetic layer is 1 nm or more and 5 nm or less.

[0560] (Constitution B18)

[0561] A magnetic head according to any one of Configurations B1 to B17

[0562] The current flowing in the laminate is directed from the first magnetic layer to the third magnetic layer.

[0563] (Configuration B19)

[0564] A magnetic recording apparatus includes:

[0565] A magnetic head according to any one of Configurations B1 to B17; and

[0566] A circuit capable of supplying current to the laminate,

[0567] The current has a direction from the first magnetic layer to the third magnetic layer.

[0568] (Configuration B20)

[0569] According to the magnetic recording apparatus of Configuration B19,

[0570] It further includes a magnetic recording medium,

[0571] The resistance of the laminate when the current flowing through the laminate is a first current is a first resistance,

[0572] When the current flowing through the laminate is a second current greater than the first current, the resistance of the laminate is a second resistance higher than the first resistance,

[0573] When the current flowing through the laminate is a third current between the first current and the second current, the resistance of the laminate oscillates,

[0574] In a recording operation of recording information on the magnetic recording medium using the magnetic head, the circuit can supply the second current to the laminate.

[0575] In the magnetic heads (magnetic heads 110B, 111B, and 112B) of the fourth embodiment, the second magnetic region 22b (for example, a magnetic region having a negative spin polarization) and the third magnetic layer 23 (for example, a magnetic layer having a negative spin polarization) contain (Fe 100- x Co x ) 100-y E y(10 atm% ≤ x ≤ 50 atm%, 10 atm% ≤ y ≤ 90 atm%). The second element E includes at least one selected from the group consisting of Cr, V, Mn, Ti, and Sc. The composition ratios x and y are atomic percentages (atm%). Thus, for example, it is easy to obtain a high saturation magnetic flux density and a negative and large absolute value of spin polarization. Efficient magnetization reversal can be obtained. An increase in recording density can be achieved.

[0576] (The fifth embodiment)

[0577] Figure 29 It is a schematic cross-sectional view illustrating a part of the magnetic recording device of the fifth embodiment.

[0578] As Figure 29 shown, in the magnetic head 111C of the magnetic recording device 210 of the fifth embodiment, in addition to the first magnetic layer 21, the second magnetic layer 22, the first non-magnetic layer 41, the second non-magnetic layer 42, and the third non-magnetic layer 43, the laminate 20 further includes a third magnetic layer 23 and a fourth non-magnetic layer 44. The other configurations in the magnetic head 111C are the same as those of the magnetic head in the second embodiment or the third embodiment. Hereinafter, an example of the magnetic head 111C will be described.

[0579] As Figure 29 shown, the third magnetic layer 23 is provided between the first non-magnetic layer 41 and the first magnetic layer 21. The fourth non-magnetic layer 44 is provided between the third magnetic layer 23 and the first magnetic layer 21. The third magnetic layer 23 contains a first element including at least one of Fe, Co, and Ni and a second element including at least one selected from the group consisting of Cr, V, Mn, Ti, and Sc. The third magnetic layer 23 has, for example, a negative polarization.

[0580] The first magnetic layer 21 and the second magnetic layer 22 contain, for example, at least any one of Fe, Co, and Ni. For example, they contain a magnetic material having a positive polarization. For example, the first magnetic layer 21 and the second magnetic layer 22 do not contain the second element. Or, the concentration of the second element contained in the first magnetic layer 21 and the second magnetic layer 22 is lower than the concentration of the second element contained in the third magnetic layer 23.

[0581] In the magnetic head 111C, for example, the first non-magnetic layer 41 contains at least one selected from the group consisting of Cu, Ag, Au, Al, and Cr. The first non-magnetic layer 41 functions, for example, as a layer that allows polarized spins to propagate.

[0582] In the magnetic head 111C, for example, the second non-magnetic layer 42 contains at least one selected from the group consisting of Cu, Ag, Au, Al, and Cr. The second non-magnetic layer 42 functions, for example, as a layer that allows polarized spins to propagate.

[0583] In the magnetic head 111C, for example, the third nonmagnetic layer 43 contains at least one selected from the group consisting of Ta, Pt, W, Mo, Ir, Ru, Tb, Rh, Cr, and Pd. The third nonmagnetic layer 43 functions, for example, as a layer that attenuates polarized spins.

[0584] In the magnetic head 111C, for example, the fourth nonmagnetic layer contains at least one selected from the group consisting of Ta, Pt, W, Mo, Ir, Ru, Tb, Rh, Cr, and Pd. The fourth nonmagnetic layer 44 functions, for example, as a layer that attenuates polarized spins.

[0585] In the magnetic head 111C having such a configuration, higher gain can be obtained.

[0586] For example, there is a first reference example in which the third magnetic layer 23 is not provided in the configuration of the magnetic head 111C. In the first reference example, the laminate 20 includes a first magnetic layer 21, a second magnetic layer 22, a first nonmagnetic layer 41, a second nonmagnetic layer 42, and a third nonmagnetic layer 43. The second magnetic layer 22 is provided between the first magnetic pole 31 and the first magnetic layer 21. The first nonmagnetic layer 41 is provided between the second magnetic layer 22 and the first magnetic layer 21. The second nonmagnetic layer 42 is provided between the first magnetic layer 21 and the second magnetic pole 32. The third nonmagnetic layer 43 is provided between the first magnetic pole 31 and the second magnetic layer 22. The second nonmagnetic layer 42 contains at least one selected from the group consisting of Cu, Ag, Au, Al, and Cr. The third nonmagnetic layer 43 contains at least one selected from the group consisting of Ta, Pt, W, Mo, Ir, Ru, Tb, Rh, Cr, and Pd. The first nonmagnetic layer 41 contains at least one selected from the group consisting of Cu, Ag, Au, Al, and Cr.

[0587] Figure 30 It is a schematic diagram illustrating the characteristics of the magnetic recording apparatus of the fifth embodiment.

[0588] Figure 30 The simulation results of the characteristics in the magnetic head 111C of the fifth embodiment are illustrated. The results of simulating the response of the magnetization of the first magnetic layer 21, the second magnetic layer 22, and the third magnetic layer 23 combined when the recording current Iw is reversed while supplying the second current i2 to the laminate 20 are illustrated. In Figure 30 , the horizontal axis is the time tm. At the first time tm1 and the second time tm2, the polarity of the recording current Iw is reversed. In Figure 30 , the vertical axis is a parameter P1 corresponding to the amount of magnetization reversal. When the parameter P1 is negative, the gain rises with respect to the case where no current is supplied to the laminate 20.

[0589] As Figure 30As shown, in the magnetic head 111C, the parameter P1 is negative immediately after the moment (the first moment tm1 or the second moment tm2) when the polarity of the recording magnetic field is reversed, and becomes positive as time passes. In the magnetic head 111C, the frequency of the recording magnetic field is high, and when the time tm after the polarity reversal is short, a gain increase can be obtained.

[0590] like Figure 30 As shown, in the magnetic head 111C, the time tm at which the absolute value of the parameter P1 is maximized is 0.45ns. On the other hand, in the first reference example described above, the time tm at which the absolute value of the parameter P1 is maximized is 0.4ns. The magnetization in the first magnetic pole 31 is reversed at a later moment than the moment (the first moment tm1 or the second moment tm2) when the polarity of the recording magnetic field is reversed. The reversal moment of the magnetization of the first magnetic layer 21 in the magnetic head 111C is more consistent with the reversal moment of the magnetization in the first magnetic pole 31. Thus, further gain can be obtained.

[0591] Consider a second reference example in which the first magnetic layer 21 is provided but the second magnetic layer 22 and the third nonmagnetic layer 43 are not provided. In the second reference example, the first nonmagnetic layer 41 is in contact with the first magnetic pole 31 .

[0592] Figure 31 It is a schematic diagram illustrating the characteristics of a magnetic recording device.

[0593] Figure 31 The relationship between the frequency of the recording magnetic field and the gain is exemplified with respect to the magnetic head 118 of the first reference example, the magnetic head 119 of the second reference example, and the magnetic head 111C. Figure 31 The horizontal axis of is the frequency fw of the recording magnetic field. The frequency fw corresponds to the frequency of the recording current Iw. Figure 31 The vertical axis represents the gain Gn0 based on the case where no current is supplied to the stacked body 20 .

[0594] like Figure 31 As shown, in the magnetic head 111C, a high gain Gn0 can be obtained even at a low frequency fw compared to the magnetic head 118 of the first reference example. In the fifth embodiment, a high recording capability can also be obtained at a high frequency during a high-speed recording operation. The recording density can be more effectively improved.

[0595] Figure 32 (a)~ Figure 32 (c) is a schematic cross-sectional view illustrating the characteristics of the magnetic recording device according to the fifth embodiment.

[0596] These figures show examples of changes in the orientation of magnetization in the magnetic head 111C. As shown in these figures, for example, the magnetization 23M of the third magnetic layer 23 and the magnetization 22M of the second magnetic layer 22 are linked.

[0597] (Sixth Implementation Method)

[0598] Figure 33 It is a schematic cross-sectional view showing a part of the magnetic recording device of the sixth embodiment.

[0599] As Figure 33 shown, in the magnetic head 121C of the magnetic recording device 210 of the sixth embodiment, in the laminate 20, in addition to the first magnetic layer 21, the second magnetic layer 22, the first non-magnetic layer 41, the second non-magnetic layer 42, and the third non-magnetic layer 43, it further includes a third magnetic layer 23 and a fourth non-magnetic layer 44.

[0600] In the magnetic head 121C, the third magnetic layer 23 is disposed between the first non-magnetic layer 41 and the first magnetic layer 21. The fourth non-magnetic layer 44 is disposed between the third magnetic layer 23 and the first magnetic layer 21. The third magnetic layer 23 contains a first element including at least one of Fe, Co, and Ni and a second element including at least one selected from the group consisting of Cr, V, Mn, Ti, and Sc.

[0601] The first non-magnetic layer 41 contains at least one selected from the group consisting of Cu, Ag, Au, Al, and Cr. The second non-magnetic layer 42 contains at least one selected from the group consisting of Cu, Ag, Au, Al, and Cr. The third non-magnetic layer 43 contains at least one selected from the group consisting of Ta, Pt, W, Mo, Ir, Ru, Tb, Rh, Cr, and Pd. The fourth non-magnetic layer 44 contains at least one selected from the group consisting of Ta, Pt, W, Mo, Ir, Ru, Tb, Rh, Cr, and Pd.

[0602] In the magnetic head 121C having such a configuration, a higher gain can also be obtained.

[0603] In the magnetic heads 111C and 121C, the thickness of the third magnetic layer 23 is, for example, 1 nm or more and 5 nm or less. The thickness of the fourth non-magnetic layer 44 is, for example, 1 nm or more and 5 nm or less. These thicknesses are the lengths along the first direction D1. As already described, the first direction D1 may also be inclined with respect to the X-axis direction.

[0604] According to the fifth embodiment and the sixth embodiment, it is possible to provide a magnetic recording device capable of achieving an increase in recording density.

[0605] The fifth embodiment and the sixth embodiment may also include the following configurations (for example, technical solutions).

[0606] (Configuration C1)

[0607] A magnetic recording device comprising:

[0608] A magnetic head;

[0609] Magnetic recording medium; and

[0610] A circuit,

[0611] The magnetic head includes:

[0612] A first magnetic pole;

[0613] A second magnetic pole; and

[0614] A laminate disposed between the first magnetic pole and the second magnetic pole,

[0615] The laminate includes:

[0616] A first magnetic layer;

[0617] A second magnetic layer disposed between the first magnetic pole and the first magnetic layer;

[0618] A first non-magnetic layer disposed between the second magnetic layer and the first magnetic layer;

[0619] A second non-magnetic layer disposed between the first magnetic layer and the second magnetic pole; and

[0620] A third non-magnetic layer disposed between the first magnetic pole and the second magnetic layer,

[0621] The second non-magnetic layer contains at least one selected from the group consisting of Cu, Ag, Au, Al, and Cr,

[0622] The third non-magnetic layer contains at least one selected from the group consisting of Ta, Pt, W, Mo, Ir, Ru, Tb, Rh, Cr, and Pd,

[0623] The resistance of the laminate when the current flowing through the laminate is a first current is a first resistance,

[0624] When the current flowing through the laminate is a second current greater than the first current, the resistance of the laminate is a second resistance higher than the first resistance,

[0625] When the current flowing through the laminate is a third current between the first current and the second current, the resistance of the laminate oscillates,

[0626] In a recording operation of recording information on the magnetic recording medium using the magnetic head, the circuit can supply the second current to the laminate.

[0627] (Constitution C2)

[0628] A magnetic recording apparatus includes:

[0629] A magnetic head;

[0630] A magnetic recording medium; and

[0631] a circuit,

[0632] The magnetic head includes:

[0633] a first magnetic pole;

[0634] a second magnetic pole; and

[0635] a laminate disposed between the first magnetic pole and the second magnetic pole,

[0636] The laminate includes:

[0637] a first magnetic layer;

[0638] a second magnetic layer disposed between the first magnetic layer and the second magnetic pole;

[0639] a first non-magnetic layer disposed between the first magnetic layer and the second magnetic layer;

[0640] a second non-magnetic layer disposed between the first magnetic pole and the first magnetic layer; and

[0641] a third non-magnetic layer disposed between the second magnetic layer and the second magnetic pole,

[0642] The second non-magnetic layer contains at least one selected from the group consisting of Cu, Ag, Au, Al, and Cr,

[0643] The third non-magnetic layer contains at least one selected from the group consisting of Ta, Pt, W, Mo, Ir, Ru, Tb, Rh, Cr, and Pd,

[0644] The resistance of the laminate when the current flowing through the laminate is a first current is a first resistance,

[0645] When the current flowing through the laminate is a second current greater than the first current, the resistance of the laminate is a second resistance higher than the first resistance,

[0646] When the current flowing through the laminate is a third current between the first current and the second current, the resistance of the laminate oscillates,

[0647] In a recording operation of recording information on the magnetic recording medium using the magnetic head, the circuit can supply the second current to the laminate.

[0648] (Constitution C3)

[0649] A magnetic recording apparatus according to Constitution C1 or C2,

[0650] The first non-magnetic layer contains a first material or a second material.

[0651] The first material includes at least one selected from the group consisting of Cu, Ag, Au, Al, and Cr.

[0652] The second material includes at least one selected from the group consisting of Ta, Pt, W, Mo, Ir, Ru, Tb, Rh, and Pd.

[0653] (Constitute C4)

[0654] According to the magnetic recording device described in Constitute C1 or C2,

[0655] The laminate further includes:

[0656] A third magnetic layer disposed between the first non-magnetic layer and the first magnetic layer; and

[0657] A fourth non-magnetic layer disposed between the third magnetic layer and the first magnetic layer.

[0658] The third magnetic layer contains a first element including at least one of Fe, Co, and Ni and a second element including at least one selected from the group consisting of Cr, V, Mn, Ti, and Sc.

[0659] The first non-magnetic layer contains at least one selected from the group consisting of Cu, Ag, Au, Al, and Cr.

[0660] The fourth non-magnetic layer contains at least one selected from the group consisting of Ta, Pt, W, Mo, Ir, Ru, Tb, Rh, Cr, and Pd.

[0661] (Constitute C5)

[0662] According to the magnetic recording device described in any one of Constitutes C1 to C4,

[0663] The second current has a direction from the first magnetic layer to the second magnetic layer.

[0664] (Constitute C6)

[0665] According to the magnetic recording device described in any one of Constitutes C1 to C5,

[0666] The thickness of the second non-magnetic layer is 1 nm or more and 5 nm or less.

[0667] (Constitute C7)

[0668] According to the magnetic recording device described in any one of Constitutes C1 to C6,

[0669] The thickness of the third non-magnetic layer is 2 nm or more and 6 nm or less.

[0670] (Constitution C8)

[0671] The magnetic recording device according to any one of Constitutions C1 to C7,

[0672] The first magnetic layer and the second magnetic layer contain at least one of Fe and Co.

[0673] (Constitution C9)

[0674] The magnetic recording device according to any one of Constitutions C1 to C8,

[0675] The thickness of the first magnetic layer is 2 nm or more and 8 nm or less.

[0676] (Constitution C10)

[0677] The magnetic recording device according to any one of Constitutions C1 to C9,

[0678] The thickness of the second magnetic layer is 2 nm or more and 4 nm or less.

[0679] (Constitution C11)

[0680] The magnetic recording device according to any one of Constitutions C1 to C10,

[0681] In the recording operation when the recording current corresponding to the information is the first frequency, the intensity of the signal recorded on the magnetic recording medium when the circuit does not supply the second current to the laminate is the first intensity,

[0682] In the recording operation when the recording current is the first frequency, the intensity of the signal recorded on the magnetic recording medium when the circuit supplies the second current to the laminate is the second intensity,

[0683] In the recording operation when the recording current corresponding to the information is the second frequency higher than the first frequency, the intensity of the signal recorded on the magnetic recording medium when the circuit does not supply the second current to the laminate is the third intensity,

[0684] In the recording operation when the recording current is the second frequency, the intensity of the signal recorded on the magnetic recording medium when the circuit supplies the second current to the laminate is the fourth intensity,

[0685] The second ratio of the fourth intensity to the third intensity is higher than the first ratio of the second intensity to the first intensity.

[0686] In the magnetic heads (magnetic heads 111C and 121C) of the fifth and sixth embodiments, the third magnetic layer 23 (for example, a magnetic layer having a negative spin polarization) contains (Fe 100-x Co x ) 100-y E y (10 atm% ≤ x ≤ 50 atm%, 10 atm% ≤ y ≤ 90 atm%). The second element E includes at least one selected from the group consisting of Cr, V, Mn, Ti, and Sc. The composition ratios x and y are atomic percentages (atm%). Thus, for example, it is easy to obtain a high saturation magnetic flux density and a negative spin polarization with a large absolute value. Efficient magnetization reversal can be obtained. An increase in recording density can be achieved.

[0687] In the first to sixth embodiments, the first magnetic pole 31 may also include a plurality of magnetic regions arranged along the X-axis direction. The second magnetic pole 32 may also include a plurality of magnetic regions arranged along the X-axis direction. The boundary between the plurality of magnetic regions may or may not be clear. For example, the plurality of magnetic regions are continuous.

[0688] Hereinafter, examples of the magnetic head and the magnetic recording medium 80 included in the magnetic recording device 210 of the first to sixth embodiments will be described.

[0689] Figure 34 It is a schematic cross-sectional view illustrating the magnetic head of the embodiment.

[0690] As Figure 34 shown, in the magnetic head of the embodiment (for example, magnetic head 110), the first direction D1 from the first magnetic pole 31 to the second magnetic pole 32 may be inclined with respect to the X-axis direction. The first direction D1 corresponds to the stacking direction of the laminate 20. The X-axis direction is along the medium opposing surface 30F. Let the angle between the first direction D1 and the medium opposing surface 30F be the angle θ1. The angle θ1 is, for example, 15 degrees or more and 30 degrees or less. The angle θ1 may also be 0 degrees.

[0691] When the first direction D1 is inclined with respect to the X-axis direction, the thickness of the layer corresponds to the length along the first direction D1. The configuration in which the first direction D1 is inclined with respect to the X-axis direction can also be applied to any magnetic head of the embodiment. For example, the interface between the first magnetic pole 31 and the laminate 20 and the interface between the laminate 20 and the second magnetic pole 32 may also be inclined with respect to the X-axis direction.

[0692] Figure 35 It is a schematic perspective view illustrating the magnetic recording device of the embodiment.

[0693] As Figure 35As shown, a magnetic head (e.g., magnetic head 110) of an embodiment is used together with a magnetic recording medium 80. In this example, the magnetic head 110 includes a recording section 60 and a reproducing section 70. Information is recorded on the magnetic recording medium 80 by the recording section 60 of the magnetic head 110. The information recorded on the magnetic recording medium 80 is reproduced by the reproducing section 70.

[0694] The magnetic recording medium 80 includes, for example, a medium substrate 82 and a magnetic recording layer 81 provided on the medium substrate 82. The magnetization 83 of the magnetic recording layer 81 is controlled by the recording section 60. For example, perpendicular magnetic recording is performed.

[0695] The reproducing section 70 includes, for example, a first reproducing magnetic shield 72a, a second reproducing magnetic shield 72b, and a magnetic reproducing element 71. The magnetic reproducing element 71 is provided between the first reproducing magnetic shield 72a and the second reproducing magnetic shield 72b. The magnetic reproducing element 71 can output a signal corresponding to the magnetization 83 of the magnetic recording layer 81.

[0696] As Figure 35 shown, the magnetic recording medium 80 moves relative to the magnetic head 110 in the direction of the medium movement direction 85. Information corresponding to the magnetization 83 of the magnetic recording layer 81 is controlled by the magnetic head 110 at an arbitrary position. Information corresponding to the magnetization 83 of the magnetic recording layer 81 is reproduced by the magnetic head 110 at an arbitrary position.

[0697] Figure 36 is a schematic perspective view showing a part of a magnetic recording device of an embodiment.

[0698] Figure 36 An example of a head slider is shown.

[0699] The magnetic head 110 is provided on a head slider 159. The head slider 159 contains, for example, Al2O3 / TiC or the like. The head slider 159 moves relative to the magnetic recording medium while floating or in contact with the magnetic recording medium.

[0700] The head slider 159 includes, for example, an air inflow side 159A and an air outflow side 159B. The magnetic head 110 is provided on a side surface of the air outflow side 159B of the head slider 159. Thus, the magnetic head 110 moves relative to the magnetic recording medium while floating or in contact with the magnetic recording medium.

[0701] Figure 37 is a schematic perspective view showing a magnetic recording device of an embodiment.

[0702] As Figure 37As shown, in the magnetic recording device 150 of the embodiment, a rotary actuator is used. The recording medium disk 180 is assembled to the spindle motor 180M. The recording medium disk 180 rotates in the direction of arrow AR by the spindle motor 180M. The spindle motor 180M responds to a control signal from the drive device control unit. The magnetic recording device 150 of the present embodiment may also include a plurality of recording medium disks 180. The magnetic recording device 150 may also include a recording medium 181. The recording medium 181 is, for example, an SSD (Solid State Drive). For the recording medium 181, a non-volatile memory such as a flash memory is used, for example. For example, the magnetic recording device 150 may be a hybrid HDD (Hard Disk Drive).

[0703] The head slider 159 records and reproduces information recorded on the recording medium disk 180. The head slider 159 is provided at the front end of the thin-film suspension 154. A magnetic head of the embodiment is provided near the front end of the head slider 159.

[0704] When the recording medium disk 180 rotates, the pressing pressure of the suspension 154 balances the pressure generated on the medium facing surface (ABS) of the head slider 159. The distance between the medium facing surface of the head slider 159 and the surface of the recording medium disk 180 becomes a predetermined floating amount. In the embodiment, the head slider 159 may also be in contact with the recording medium disk 180. For example, a contact start-stop type may be applied.

[0705] The suspension 154 is connected to one end of the arm 155 (for example, an actuator arm). The arm 155 has, for example, a bobbin portion or the like. The bobbin portion holds a drive coil. A voice coil motor 156 is provided at the other end of the arm 155. The voice coil motor 156 is a type of linear motor. The voice coil motor 156 includes, for example, a drive coil and a magnetic circuit. The drive coil is wound around the bobbin portion of the arm 155. The magnetic circuit includes a permanent magnet and a counter yoke. The drive coil is provided between the permanent magnet and the counter yoke. The suspension 154 has one end and the other end. The magnetic head is provided at one end of the suspension 154. The arm 155 is connected to the other end of the suspension 154.

[0706] The arm 155 is held by ball bearings. The ball bearings are provided at two locations above and below the bearing portion 157. The arm 155 can rotate and slide by the voice coil motor 156. The magnetic head can move to any position on the recording medium disk 180.

[0707] Figure 38 (a) and Figure 38 (b) are schematic perspective views illustrating a part of the magnetic recording device of the embodiment.

[0708] Figure 38(a) illustrates the configuration of a part of a magnetic recording device and is an enlarged perspective view of a head stack assembly 160. Figure 38 (b) is a perspective view illustrating a head gimbal assembly (HGA) 158 that is part of the head stack assembly 160.

[0709] As Figure 38 shown in (a), the head stack assembly 160 includes a bearing portion 157, a head gimbal assembly 158, and a support frame 161. The head gimbal assembly 158 extends from the bearing portion 157. The support frame 161 extends from the bearing portion 157. The extending direction of the support frame 161 is opposite to the extending direction of the head gimbal assembly 158. The support frame 161 supports the coil 162 of the voice coil motor 156.

[0710] As Figure 38 shown in (b), the head gimbal assembly 158 has an arm 155 extending from the bearing portion 157 and a suspension 154 extending from the arm 155.

[0711] A head slider 159 is provided at the front end of the suspension 154. A magnetic head of the embodiment is provided on the head slider 159.

[0712] The magnetic head assembly (head gimbal assembly) 158 of the embodiment includes the magnetic head of the embodiment, a head slider 159 provided with the magnetic head, a suspension 154, and an arm 155. The head slider 159 is provided at one end of the suspension 154. The arm 155 is connected to the other end of the suspension 154.

[0713] The suspension 154 has, for example, leads (not shown) for recording and reproducing signals. The suspension 154 may also have, for example, leads (not shown) for a heater for floating height adjustment. The suspension 154 may also have, for example, leads (not shown) for a spin transfer torque oscillator or the like. These leads are electrically connected to a plurality of electrodes provided on the magnetic head.

[0714] In the magnetic recording device 150, a signal processing unit 190 is provided. The signal processing unit 190 uses the magnetic head to record and reproduce signals to and from the magnetic recording medium. In the signal processing unit 190, the input / output lines of the signal processing unit 190 are connected, for example, to the electrode pads of the head gimbal assembly 158 and are electrically connected to the magnetic head.

[0715] The magnetic recording device 150 of the embodiment includes a magnetic recording medium, the magnetic head of the embodiment, a movable part, a position control part, and a signal processing part. The movable part enables the magnetic recording medium and the magnetic head to move relative to each other in a separated or contacting state. The position control part aligns the magnetic head to a predetermined recording position on the magnetic recording medium. The signal processing part performs recording and reproduction of signals to and from the magnetic recording medium using the magnetic head.

[0716] For example, as the magnetic recording medium described above, a recording medium disk 180 is used. The movable part described above includes, for example, a head slider 159. The position control part described above includes, for example, a head gimbal assembly 158.

[0717] According to the embodiment, a magnetic head and a magnetic recording device capable of achieving an increase in recording density can be provided.

[0718] In the present specification, "vertical" and "parallel" include not only strict vertical and strict parallel, but also, for example, deviations in the manufacturing process, etc., as long as they are substantially vertical and substantially parallel.

[0719] As described above, the embodiments of the present invention have been described with reference to specific examples. However, the present invention is not limited to these specific examples. For example, regarding the specific configurations of each element such as magnetic poles, laminates, magnetic layers, non-magnetic layers, and wirings included in the magnetic head, as long as those skilled in the art can appropriately select from the known range and can implement the present invention in the same manner and obtain the same effects, they are included in the scope of the present invention.

[0720] A technique obtained by combining any two or more elements of each specific example within the technically possible range is also included in the scope of the present invention as long as it includes the gist of the present invention.

[0721] In addition, all magnetic heads and magnetic recording devices that those skilled in the art can appropriately design and modify based on the magnetic head and magnetic recording device described above as embodiments of the present invention are also included in the scope of the present invention as long as they include the gist of the present invention.

[0722] In addition, within the scope of the idea of the present invention, those skilled in the art can conceive of various modification examples and correction examples, and it should be understood that these modification examples and correction examples also belong to the scope of the present invention.

[0723] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are included in the invention described in the claims and its equivalent scope.

Claims

1. A magnetic head, comprising: A first magnetic pole; A second magnetic pole; and A laminate disposed between the first magnetic pole and the second magnetic pole, The laminate includes: A first magnetic layer; A second magnetic layer disposed between the first magnetic layer and the second magnetic pole; A first non-magnetic layer disposed between the first magnetic layer and the second magnetic layer; A second non-magnetic layer disposed between the second magnetic layer and the second magnetic pole; and A third non-magnetic layer disposed between the first magnetic pole and the first magnetic layer, The first magnetic layer contains a first element including at least one of Fe, Co, and Ni, The second magnetic layer contains (Fe 100-x Co x ), 100-y E y , where 25 atm% ≤ x ≤ 35 atm%, 10 atm% ≤ y ≤ 90 atm%, and the second element E includes at least one selected from the group consisting of Cr, V, Mn, Ti, and Sc. The first magnetic layer does not contain the second element, or the concentration of the second element in the first magnetic layer is lower than the concentration of the second element in the second magnetic layer.

2. The magnetic head according to claim 1, A first thickness of the first magnetic layer along a first direction from the first magnetic pole to the second magnetic pole is 0.25 times or more and 4 times or less of a second thickness of the second magnetic layer along the first direction.

3. The magnetic head according to claim 2, The third non-magnetic layer is in contact with the first magnetic pole and the first magnetic layer.

4. The magnetic head according to claim 2, The second non-magnetic layer is in contact with the second magnetic layer and the second magnetic pole.

5. The magnetic head according to claim 2, The laminate further includes a third magnetic layer, The third magnetic layer is disposed between the second magnetic layer and the second non-magnetic layer, The third magnetic layer contains a first element including at least one of Fe, Co, and Ni, The third magnetic layer does not contain the second element, or the concentration of the second element in the third magnetic layer is lower than the concentration of the second element in the second magnetic layer.

6. The magnetic head according to claim 2, Further includes a coil, According to a recording current flowing through the coil, a change in a recording magnetic field generated from at least one of the first magnetic pole and the second magnetic pole, A resistance of the laminate is a first resistance when the recording current is a first current, The resistance is a second resistance when the recording current is a second current, The resistance is a third resistance when the recording current is a third current, An absolute value of the first current is smaller than an absolute value of the second current and smaller than an absolute value of the third current, A direction of the second current is opposite to a direction of the third current, The first resistance is lower than the second resistance and lower than the third resistance.

7. A magnetic recording device, comprising: The magnetic head according to claim 1; and A circuit, The circuit is capable of supplying a current to the laminate, The current has a direction from the first magnetic layer to the second magnetic layer.

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