Semiconductor device and method of manufacturing the same

Abstract

To provide a semiconductor device capable of improving characteristics and a manufacturing method thereof. According to an embodiment, a semiconductor device includes a first to third electrodes, a first conductive member semiconductor member, and a first insulating member. The first insulating member includes a first to third positions. The first insulating member contains a first element at the third position, the first element including at least one element selected from a group including nitrogen, aluminum, hafnium, and zirconium. The first insulating member does not contain the first element at the first and second positions. Alternatively, a concentration of the first element at the first position and a concentration of the first element at the second position are each lower than a concentration of the first element at the third position.

Description

[0001] This application is based on Japanese Patent Application No. 2021-092780 (Filing Date: June 2, 2021) and claims priority from this application. This application incorporates the entire contents of the application by reference. TECHNICAL FIELD

[0002] Embodiments of the present application relate to a semiconductor device and a manufacturing method thereof. BACKGROUND

[0003] For example, in a semiconductor device such as a transistor, it is desirable to improve characteristics. SUMMARY

[0004] Embodiments of the present application provide a semiconductor device and a manufacturing method thereof capable of improving characteristics.

[0005] According to an embodiment of the present application, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first conductive member, a semiconductor member, and a first insulating member. A first direction is from the first electrode toward the second electrode. The third electrode includes a third electrode end portion and a third electrode other end portion. The third electrode end portion is between the first electrode and the third electrode other end portion in the first direction. The first conductive member includes a first conductive member end portion and a first conductive member other end portion. The first conductive member end portion is between the first electrode and the first conductive member other end portion in the first direction. A position of the first conductive member end portion in the first direction is between a position of the first electrode in the first direction and a position of the third electrode end portion in the first direction. The first conductive member is electrically connected to one of the second electrode and the third electrode. Alternatively, the first conductive member can be electrically connected to the one. The semiconductor member includes a first semiconductor region of a first conductive type, a second semiconductor region of a second conductive type, and a third semiconductor region of the first conductive type. The first semiconductor region includes a first partial region and a second partial region. The first partial region is between the first electrode and the second electrode in the first direction. The second semiconductor region is between the first partial region and the third semiconductor region in the first direction. The third semiconductor region is electrically connected to the second electrode. A second direction from a part of the third electrode toward the second semiconductor region crosses the first direction. A direction from another part of the third electrode toward a part of the first partial region is along the second direction. A direction from the second partial region toward the first conductive member is along the first direction. A direction from the first conductive member toward the first partial region is along the second direction. The first insulating member includes silicon and oxygen. The first insulating member includes a first position, a second position, and a third position. The first position is between the second partial region and the first conductive member end portion in the first direction. The second position is between the first conductive member and the first partial region in the second direction. A direction from the first position toward the third position is along the second direction. A position of the third position in the first direction is between a position of the second partial region in the first direction and a position of the second position in the first direction. The first insulating member includes, at the third position, a first element including at least one element selected from a group including nitrogen, aluminum, hafnium, and zirconium. The first insulating member does not include the first element at the first position and the second position. Alternatively, a concentration of the first element at the first position and a concentration of the first element at the second position are lower than a concentration of the first element at the third position, respectively.

[0006] According to the semiconductor device having the above structure, a semiconductor device capable of improving characteristics and a manufacturing method thereof can be provided. BRIEF DESCRIPTION OF DRAWINGS

[0007] Figure 1 is a schematic cross-sectional view illustrating a semiconductor device of the first embodiment.

[0008] Figure 2 is a schematic cross-sectional view illustrating a semiconductor device of the reference example.

[0009] Figure 3 is a schematic cross-sectional view illustrating a semiconductor device of the reference example.

[0010] Figure 4 is a schematic cross-sectional view illustrating a semiconductor device of the reference example.

[0011] Figure 5 is a schematic cross-sectional view illustrating a semiconductor device.

[0012] Figure 6 is a graph illustrating characteristics of a semiconductor device.

[0013] Figure 7 is a graph illustrating characteristics of a semiconductor device.

[0014] Figure 8 is a schematic cross-sectional view illustrating a semiconductor device of the first embodiment.

[0015] Figure 9 is a schematic cross-sectional view illustrating a semiconductor device of the first embodiment.

[0016] Figure 10 is a schematic cross-sectional view illustrating a part of a semiconductor device of the first embodiment.

[0017] Figure 11 is a schematic cross-sectional view illustrating a part of a semiconductor device of the first embodiment.

[0018] Figure 12 is a schematic cross-sectional view illustrating a semiconductor device.

[0019] Figure 13 of Figure 13 (a) to Figure 13 (c) are graphs illustrating characteristics of a semiconductor device.

[0020] Figure 14 is a graph illustrating characteristics of a semiconductor device.

[0021] Figure 15 is a schematic cross-sectional view illustrating a semiconductor device of the first embodiment.

[0022] Figure 16 is a schematic cross-sectional view illustrating a semiconductor device of Embodiment 1.

[0023] Figure 17 is a schematic cross-sectional view illustrating a manufacturing method of a semiconductor device of Embodiment 2.

[0024] Figure 18 is a schematic cross-sectional view illustrating a manufacturing method of a semiconductor device of Embodiment 2.

[0025] Figure 19 is a schematic cross-sectional view illustrating a manufacturing method of a semiconductor device of Embodiment 2.

[0026] Figure 20 is a schematic cross-sectional view illustrating a manufacturing method of a semiconductor device of Embodiment 2.

[0027] Figure 21 is a schematic cross-sectional view illustrating a manufacturing method of a semiconductor device of Embodiment 2.

[0028] Figure 22 is a schematic cross-sectional view illustrating a manufacturing method of a semiconductor device of Embodiment 2.

[0029] Figure 23 is a schematic cross-sectional view illustrating a manufacturing method of a semiconductor device of Embodiment 2.

[0030] (Symbol Explanation)

[0031] 10: semiconductor member; 10B: bottom surface; 10H: hole; 10LS: lower side surface; 10R: oxidation region; 10US: upper side surface; 11-15: 1st-5th semiconductor regions; 11a, 11b: 1st and 2nd partial regions; 41: 1st insulating member; 41a-41f: 1st-6th insulating regions; 43a: 1st direction end portion; 43b: 1st direction other end portion; 44a: 2nd direction end portion; 44b: 2nd direction other end portion; 45a-45c: 1st-3rd regions; 45ae-45ce: 1st-3rd region end portions; 45bp: one portion; 45bq: other portion; 45cf: end portion; 45cp: one portion; 45cq: other portion; 46a-46c: 1st-3rd intermediate regions; 47z: region; 51-53: 1st-3rd electrodes; 52C: connecting member; 52LL: connecting member; 52T: terminal; 52a, 52b: portions; 53a: 3rd electrode end portion; 53b: 3rd electrode other end portion; 61: 1st conductive member; 61C: connecting member; 61T: terminal; 61a: 1st conductive member end portion; 61b: 1st conductive member other end portion; 71, 72: 1st and 2nd insulating films; 81, 82: 1st and 2nd films; 81B, 82B: 1st and 2nd bottom surface regions; 81L, 82L: 1st and 2nd lower side surface regions; 81U, 82U: 1st and 2nd upper side surface regions; ΔBV: breakdown voltage; 110, 110a, 111, 119a-119c, 120, 130: semiconductor device; Cv1: curve; RR1, RR2: 1st and 2nd ratios; d1, d2: 1st and 2nd distances; de1-de3: 1st-3rd end portion distances; p1-p6: 1st-6th positions; tc1: thickness; x3, x4: 3rd and 4th distances. DETAILED DESCRIPTION

[0032] Hereinafter, each embodiment of the present application will be described with reference to the drawings.

[0033] The drawings are schematic or conceptual, and the relationship between the thickness and the width of each portion, the ratio of sizes between portions, and the like are not necessarily the same as that of the actual one. Even in cases where the same portion is shown, the dimensions, the ratio, and the like are not necessarily the same as each other among the drawings.

[0034] In the present application specification and each drawing, with respect to the existing drawings, the same symbol is added to the same element as the aforementioned element, and the detailed description is appropriately omitted.

[0035] (1st Embodiment)

[0036] Figure 1 is a schematic cross-sectional view illustrating the semiconductor device of the 1st embodiment.

[0037] AsFigure 1 As shown, the semiconductor device 110 of the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a first conductive member 61, a semiconductor member 10, and a first insulating member 41.

[0038] The direction from the first electrode 51 to the second electrode 52 follows the first direction. The first direction is defined as the Z-axis direction. The direction perpendicular to the Z-axis direction is defined as the X-axis direction. The direction perpendicular to both the Z-axis and X-axis directions is defined as the Y-axis direction.

[0039] The third electrode 53 includes a third electrode end 53a and a third electrode other end 53b. The third electrode end 53a is located between the first electrode 51 and the third electrode other end 53b in the first direction (Z-axis direction). The third electrode end 53a is the end on one side of the first electrode 51. The third electrode other end 53b is the end on one side of the second electrode 52.

[0040] The first conductive member 61 includes a first conductive member end 61a and a first conductive member other end 61b. The first conductive member end 61a is located between the first electrode 51 and the first conductive member other end 61b in the first direction (Z-axis direction). The first conductive member end 61a is the end on one side of the first electrode 51. The first conductive member other end 61b is the end on one side of the second electrode 52. The position of the first conductive member end 61a in the first direction (Z-axis direction) is between the position of the first electrode 51 in the first direction and the position of the third electrode end 53a in the first direction.

[0041] The first conductive member 61 is electrically connected to one of the second electrode 52 and the third electrode 53. Alternatively, the first conductive member 61 can be electrically connected to one of the second electrode 52 and the third electrode 53. In the semiconductor device 110, the first conductive member 61 is electrically connected to the second electrode 52.

[0042] For example, such as Figure 1 As shown, the first conductive member 61 is electrically connected to the second electrode 52 via connecting member 61C, connecting member 52LL, and connecting member 52C. These connecting members can be disposed in connection with... Figure 1 The illustrated cross-sections show different locations. For example, terminal 52T can also be connected to the second electrode 52 via connecting member 52C. Terminal 61T can also be electrically connected to the first conductive member 61 via connecting member 61C. Alternatively, terminal 61T can be electrically connected to terminal 52T via connecting member 52LL. ​​Connecting member 52LL can also be provided separately from semiconductor device 110.

[0043] Semiconductor component 10 is located, for example, between the first electrode 51 and the second electrode 52. Semiconductor component 10 includes, for example, a semiconductor such as silicon.

[0044] The semiconductor member 10 includes a first semiconductor region 11 of a first conductivity type, a second semiconductor region 12 of a second conductivity type, and a third semiconductor region 13 of the first conductivity type. As shown in Figure 1 the semiconductor member 10 can further include a fourth semiconductor region 14. As shown in Figure 1 the semiconductor member 10 can further include a fifth semiconductor region 15.

[0045] For example, the first conductivity type is n type, and the second conductivity type is p type. In an embodiment, the first conductivity type can be p type, and the second conductivity type can be n type. In the following examples, the first conductivity type is n type, and the second conductivity type is p type.

[0046] The first semiconductor region 11 includes a first partial region 11a and a second partial region 11b. For example, the first partial region 11a is between the first electrode 51 and the second electrode 52 in the first direction (Z-axis direction).

[0047] The second semiconductor region 12 is between the first partial region 11a and the third semiconductor region 13 in the first direction (Z-axis direction). For example, the first partial region 11a, the second semiconductor region 12, and the third semiconductor region 13 are present between the first electrode 51 and the second electrode 52. The third semiconductor region 13 is electrically connected to the second electrode 52.

[0048] A second direction of the second semiconductor region 12 from a portion of the third electrode 53 intersects the first direction. The second direction is, for example, the X-axis direction.

[0049] A direction from another portion of the third electrode 53 to a portion of the first partial region 11a is along the second direction (for example, the X-axis direction).

[0050] A direction from the second partial region 11b of the first semiconductor region 11 to the first conductive member 61 is along the first direction (Z-axis direction). A direction from the first conductive member 61 to the first partial region 11a is along the second direction (for example, the X-axis direction).

[0051] The fourth semiconductor region 14 is provided between the first electrode 51 and the first semiconductor region 11 in the first direction (Z-axis direction). The fourth semiconductor region 14 is of the first conductivity type (for example, n type). The fourth semiconductor region 14 is electrically connected to the first electrode 51. The fourth semiconductor region 14 can also include a semiconductor substrate, for example.

[0052] The carrier concentration of the first conductivity type in the fourth semiconductor region 14 is higher than the carrier concentration of the first conductivity type in the first semiconductor region 11. The first semiconductor region 11 is, for example, an n region or an n－ Region. The fourth semiconductor region 14 is, for example, n. + Region. By providing the fourth semiconductor region 14, the resistance of the electrical connection of the first electrode 51 can be reduced. For example, a low on-resistance can be obtained.

[0053] The carrier concentration of the first conductivity type in the third semiconductor region 13 is higher than the carrier concentration of the first conductivity type in the first semiconductor region 11. The third semiconductor region 13 is, for example, an n+ region.

[0054] When a fifth semiconductor region 15 is provided, the fifth semiconductor region 15 is, for example, provided between the second semiconductor region 12 and the second electrode 52. The fifth semiconductor region 15 is a second conductivity type (e.g., p-type). The carrier concentration of the second conductivity type in the fifth semiconductor region 15 is higher than the carrier concentration of the second conductivity type in the second semiconductor region 12. For example, the second semiconductor region 12 is a p-region. The fifth semiconductor region 15 is a p+ region. By providing the fifth semiconductor region 15, the resistance of the electrical connection of the second electrode 52 can be reduced. For example, a low on-resistance can be obtained.

[0055] In this example, the second electrode 52 includes portions 52a and 52b. The fifth semiconductor region 15 is located between the second semiconductor region 12 and portion 52a. The third electrode 53 is located between the first electrode 51 and portion 52b.

[0056] The first insulating member 41 comprises silicon and oxygen. As described later, a portion of the first insulating member 41 may comprise, for example, SiO2. Another portion of the first insulating member 41 may also comprise other elements (the first element described later).

[0057] The first insulating member 41 is located between the third electrode 53 and the semiconductor member 10, and between the first conductive member 61 and the semiconductor member 10. The first insulating member 41 electrically insulates the third electrode 53 from the semiconductor member 10. The first conductive member 61 electrically insulates the first conductive member 61 from the semiconductor member 10. A portion of the first insulating member 41 (e.g., the fifth insulating region 41e described later) is located between the third electrode 53 and the second semiconductor region 12.

[0058] For example, a current flowing between the first electrode 51 and the second electrode 52 can be controlled by a potential of the third electrode 53. The potential of the third electrode 53 is, for example, a potential with respect to a potential of the second electrode 52. The first electrode 51 functions as, for example, a drain electrode. The second electrode 52 functions as, for example, a source electrode. The third electrode 53 functions as, for example, a gate electrode. A part of the first insulating member 41 functions as, for example, a gate insulating film. The first conductive member 61 functions as, for example, a field plate. The semiconductor device 110 is, for example, a transistor.

[0059] As shown in FIG. 1, the first insulating member 41 includes a first position p1, a second position p2, and a third position p3. The first position p1 is between the second partial region 11b and the first conductive member end portion 61a in the first direction (Z-axis direction). The second position p2 is between the first conductive member 61 and the first partial region 11a in the second direction (X-axis direction). A direction from the first position p1 to the third position p3 is along the second direction (e.g., X-axis direction). A position of the third position p3 in the first direction (Z-axis direction) is between a position of the second partial region 11b in the first direction and a position of the second position p2 in the first direction. Figure 1 The first insulating member 41 contains a first element at the third position p3. The first element includes at least one element selected from a group including nitrogen, aluminum, hafnium, and zirconium. The first insulating member 41 does not contain the first element at the first position p1 and the second position p2. Alternatively, a concentration of the first element at the first position p1 and a concentration of the first element at the second position p2 are lower than a concentration of the first element at the third position p3, respectively. In one example, the third position p3 contains, for example, SiON. For example, the third position p3 can also contain at least one oxide selected from a group including aluminum, hafnium, and zirconium.

[0060] For example, the first insulating member 41 includes a first insulating region 41a, a second insulating region 41b, and a third insulating region 41c. The first insulating region 41a includes the above-described first position p1. The second insulating region 41b includes the above-described second position p2. The third insulating region 41c includes the above-described third position p3.

[0061] The first insulating region 41a is between the second partial region 11b and the first conductive member end portion 61a in the first direction (Z-axis direction). The second insulating region 41b is between the first conductive member 61 and the first partial region 11a in the second direction (X-axis direction).

[0062] The first insulating region 41a is between the second partial region 11b and the first conductive member end portion 61a in the first direction (Z-axis direction). The second insulating region 41b is between the first conductive member 61 and the first partial region 11a in the second direction (X-axis direction).

[0063] The third insulating region 41c is in the second direction (X-axis direction) from at least a portion of the first insulating region 41a to the third insulating region 41c. The third insulating region 41c is positioned between the position of the second partial region 11b in the first direction and the position of the second insulating region 41b in the first direction.

[0064] The third insulating region 41c contains the first element including at least one element selected from a group including nitrogen, aluminum, hafnium, and zirconium. The first insulating region 41a and the second insulating region 41b do not contain the first element. Alternatively, the concentration of the first element in the first insulating region 41a and the concentration of the first element in the second insulating region 41b are lower than the concentration of the first element in the third insulating region 41c, respectively. In one example, the third insulating region 41c contains, for example, SiON. For example, the third insulating region 41c can also contain at least one oxide selected from a group including aluminum, hafnium, and zirconium.

[0065] With such a structure, for example, a high withstand voltage can be obtained. This is considered to be because the above-described first element functions as a charge (for example, a fixed charge). For example, concentration of an electric field in a local portion can be suppressed in the vicinity of the first conductive member 61. According to the embodiment, for example, a high withstand voltage and a low on-resistance can be obtained. According to the embodiment, a semiconductor device capable of improving characteristics can be provided.

[0066] Figures 2-4 is a schematic cross-sectional view of a semiconductor device of an example reference example.

[0067] As Figure 2 shown in the semiconductor device 119a of the first reference example, the above-described third insulating region 41c is not provided. The first insulating member 41 does not contain the first element at the first to third positions p1 to p3. In the first reference example, the entire first insulating member 41 is SiO2. In the first reference example, it is difficult to obtain a sufficiently high withstand voltage. Alternatively, if a high withstand voltage is desired, the on-resistance becomes high.

[0068] As Figure 3 shown in the semiconductor device 119b of the second reference example, the third insulating region 41c containing the first element is provided. In the second reference example, the first insulating region 41a also contains the first element. The first insulating member 41 contains the first element at the first position p1 and the third position p3. It is known that in such a second reference example, it is difficult to obtain a sufficiently high withstand voltage. Alternatively, if a high withstand voltage is desired, the on-resistance becomes high.

[0069] As Figure 4As shown in the semiconductor device 119c of the third reference example, the third insulating region 41c containing the first element is provided. In the third reference example, the second insulating region 41b also contains the first element. The first insulating member 41 contains the first element at the second position p2 and the third position p3. It is known that in such a third reference example, it is difficult to obtain a sufficiently high withstand voltage. Alternatively, if a high withstand voltage is desired, the on-resistance becomes high.

[0070] In an embodiment, the concentration of the first element is high in the third insulating region 41c, and the concentration of the first element is low in the first insulating region 41a and the second insulating region 41b. With such a structure, a high withstand voltage can be obtained. Hereinafter, examples of characteristics of the semiconductor device will be described.

[0071] Figure 5 is a schematic cross-sectional view illustrating a semiconductor device.

[0072] As shown in Figure 5 , the third insulating region 41c includes a first direction end portion 43a and a first direction other end portion 43b. The first direction end portion 43a is between the second partial region 11b and the first direction other end portion 43b in the first direction (Z-axis direction). The first direction end portion 43a is an end portion on the side of the first electrode 51. The first direction other end portion 43b is an end portion on the side of the second electrode 52.

[0073] A distance along the first direction between the position of the first conductive member end portion 61a in the first direction and the position of the third electrode end portion 53a in the first direction is set as a first distance d1. A distance along the first direction between the position of the first conductive member end portion 61a in the first direction (Z-axis direction) and the position of the first direction other end portion 43b in the first direction is set as a second distance d2. The first distance d1 corresponds to the depth of the first conductive member end portion 61a when the third electrode end portion 53a is taken as a reference. The second distance d2, for example, corresponds to the depth of the upper end of the third insulating region 41c when the depth of the first conductive member end portion 61a is taken as a reference.

[0074] A ratio (d2 / d1) of the second distance d2 to the first distance d1 is set as a first ratio. When the first ratio is 0, the depth of the upper end of the third insulating region 41c is the same as the depth of the first conductive member end portion 61a. When the first ratio is 1, for example, the upper end of the third insulating region 41c is in contact with the third electrode 53. In this case, the semiconductor device 119c corresponds to the third reference example.

[0075] As shown in Figure 5As illustrated, the third insulating region 41c includes a second direction end portion 44a and a second direction other end portion 44b. The second direction end portion 44a is between the second direction other end portion 44b and the first partial region 11a in the second direction (for example, the X-axis direction). The second direction end portion 44a is the end portion on the first conductive member 61 side in the X-axis direction. The second direction other end portion 44b is the end portion on the first partial region 11a side in the X-axis direction.

[0076] A distance (for example, the shortest distance) along the second direction between the position of the first conductive member end portion 61a in the second direction (for example, the X-axis direction) and the position of the second direction end portion 44a in the second direction is set as a third distance x3. A distance (for example, the shortest distance) along the second direction between the position of the first conductive member end portion 61a in the second direction (for example, the X-axis direction) and the position of the second direction other end portion 44b in the second direction is set as a fourth distance x4. The position of the first conductive member end portion 61a in the second direction (for example, the X-axis direction) is the position of the end of the first conductive member end portion 61a on the first partial region 11a side in the X-axis direction.

[0077] A ratio (x4 / x3) of the fourth distance x4 to the third distance x3 is set as a second ratio. When the second ratio is 0, the second direction other end portion 44b overlaps with the end of the first conductive member end portion 61a on the first partial region 11a side in the Z-axis direction. One example of the case where the second ratio is negative corresponds to the semiconductor device 119b of the second reference example. When the second ratio is 1, the third insulating region 41c is not substantially provided. The condition where the second ratio is 1 corresponds to the semiconductor device 119a of the first reference example, for example.

[0078] Hereinafter, an example of a simulation result of characteristics when the relationship between the first distance d1 and the second distance d2 is changed will be described.

[0079] Figure 6 is a graph illustrating characteristics of a semiconductor device.

[0080] Figure 6 The horizontal axis of is the first ratio RR1. As has been described, the first ratio RR1 is the ratio of the second distance d2 to the first distance d1. Figure 6 The vertical axis of is the relative breakdown voltage ΔBV. The relative breakdown voltage ΔBV is the breakdown voltage when the breakdown voltage in the above first reference example is the reference. In Figure 6 In, the second ratio is fixed at 0.8. It is preferable that the relative breakdown voltage ΔBV be large.

[0081] As Figure 6As shown, when the first ratio RR1 exceeds 0.1, the relative blocking voltage ΔBV increases. When the first ratio RR1 is above 0.66, the relative blocking voltage ΔBV begins to decrease. A high blocking voltage ΔBV can be obtained when the first ratio RR1 is above 0.15 and below 0.85.

[0082] In this embodiment, the first ratio RR1 is preferably 0.15 or higher and 0.85 or lower. More preferably, the first ratio RR1 is 0.2 or higher and 0.8 or lower. This allows for a consistently high blocking voltage ΔBV. The first ratio RR1 can also be 0.21 or higher and 0.77 or lower. This again allows for a consistently high blocking voltage ΔBV.

[0083] like Figure 6 As shown, in the semiconductor device 119c of the third reference example where the first ratio RR1 is 1, the blocking voltage ΔBV is low.

[0084] The following is an example of simulation results illustrating the characteristics when the relationship between the third distance x3 and the fourth distance x4 is changed.

[0085] Figure 7 It is a graph illustrating the characteristics of a semiconductor device.

[0086] Figure 7 The horizontal axis is the second ratio RR2. As already explained, the second ratio RR2 is the ratio of the fourth distance x4 to the third distance x3. Figure 6 The vertical axis represents the relative blocking voltage ΔBV. In Figure 7 In this case, the first ratio RR1 is fixed at 0.435.

[0087] like Figure 7 As shown, when the second ratio RR2 is substantially 0 (semiconductor device 119b of the second reference example), the blocking voltage ΔBV is low. When the second ratio RR2 increases, the blocking voltage ΔBV rises. As already explained, the condition that the second ratio RR2 is 1 corresponds to the semiconductor device 119a of the first reference example, in which case the blocking voltage ΔBV is low. When the second ratio RR2 is higher than 0 and less than 1, a high blocking voltage ΔBV can be obtained. Within this range, when the second ratio RR2 increases, the blocking voltage ΔBV increases.

[0088] In an embodiment, the second ratio RR2 is preferably 0.16 or higher and less than 1. The second ratio RR2 may also be 0.16 or higher and less than 0.9. This results in a high blocking voltage ΔBV. In an embodiment, the second ratio RR2 may also be 0.36 or higher. This results in a consistently high blocking voltage ΔBV. The second ratio RR2 may also be 0.58 or higher. This results in a consistently higher blocking voltage ΔBV.

[0089] likeFigure 1 As shown in the drawing, in the embodiment, the first insulating member 41 can also include a fourth position p4. The position of the fourth position p4 in the first direction (Z-axis direction) is between the position of the third position p3 in the first direction and the position of the second position p2 in the first direction. The concentration of the first element at the fourth position p4 is, for example, between the concentration of the first element at the third position p3 and the concentration of the first element at the second position p2. In this way, a region in which the concentration of the first element is intermediate can also be provided.

[0090] For example, the first insulating member 41 can also include a fourth insulating region 41d. The position of the fourth insulating region 41d in the first direction (Z-axis direction) is between the position of the third insulating region 41c in the first direction and the position of the second insulating region 41b in the first direction. The concentration of the first element in the fourth insulating region 41d is between the concentration of the first element in the third insulating region 41c and the concentration of the first element in the second insulating region 41b.

[0091] As shown in the drawing, the first insulating member 41 can also include a fifth position p5. The fifth position p5 is between the third electrode 53 and the second semiconductor region 12 in the second direction (X-axis direction). The first insulating member 41 does not contain the first element at the fifth position p5. Alternatively, the concentration of the first element at the fifth position p5 is lower than the concentration of the first element at the third position p3. Figure 1 For example, the first insulating member 41 includes a fifth insulating region 41e. The fifth insulating region 41e is between the third electrode 53 and the second semiconductor region 12 in the second direction (X-axis direction). The fifth insulating region 41e does not contain the first element. Alternatively, the concentration of the first element in the fifth insulating region 41e is lower than the concentration of the first element in the third insulating region 41c.

[0092] The fifth insulating region 41e functions as, for example, a gate insulating film. The fifth insulating region 41e (fifth position p5) does not contain the first element, or the concentration of the first element in the fifth insulating region 41e is low, and thus a stable threshold voltage can be obtained.

[0093] As shown in the drawing, in the semiconductor device 110, the first insulating member 41 includes a sixth position p6. The position of the sixth position p6 in the second direction (X-axis direction) is between the position of the first conductive member 61 (for example, also the first conductive member end portion 61a) in the second direction and the position of the third position p3 in the second direction. The first insulating member 41 does not contain the first element at the sixth position p6. Alternatively, the concentration of the first element at the sixth position p6 is lower than the concentration of the first element at the third position p3.

[0094] Figure 1 As shown in the drawing, in the semiconductor device 110, the first insulating member 41 includes a sixth position p6. The position of the sixth position p6 in the second direction (X-axis direction) is between the position of the first conductive member 61 (for example, also the first conductive member end portion 61a) in the second direction and the position of the third position p3 in the second direction. The first insulating member 41 does not contain the first element at the sixth position p6. Alternatively, the concentration of the first element at the sixth position p6 is lower than the concentration of the first element at the third position p3. ​

[0095] For example, the first insulating member 41 includes a sixth insulating region 41f. The sixth insulating region 41f is positioned between the position of the first conductive member 61 (for example, the first conductive member end portion 61a) in the second direction and the position of the third insulating region 41c in the second direction. The sixth insulating region 41f does not contain the first element. Alternatively, the concentration of the first element in the sixth insulating region 41f is lower than the concentration of the first element in the third insulating region 41c. By providing such a sixth insulating region 41f, a higher withstand voltage is easily obtained.

[0096] Figure 8 is a schematic cross-sectional view illustrating a semiconductor device of the first embodiment.

[0097] As shown in Figure 8 , in the semiconductor device 110a of the embodiment, the first insulating member 41 also includes the first to fifth insulating regions 41a to 41e. In the semiconductor device 110a, the sixth insulating region 41f is not provided. The structure of the semiconductor device 110a other than this can be the same as that of the semiconductor device 110. In the semiconductor device 110a, a high withstand voltage is also obtained.

[0098] In the embodiment, the concentration of the first element in the first insulating member 41 in the plane of the X-Y plane including the first conductive member end portion 61a is, for example, preferably 1.5 x 10 14 cm -2 or more and 1.05 x 10 15 cm -2 or less. Thus, a high withstand voltage and a low on-resistance are easily obtained.

[0099] Figure 9 is a schematic cross-sectional view illustrating a semiconductor device of the first embodiment.

[0100] As shown in Figure 9 , in the semiconductor device 111 of the embodiment, the first insulating member 41 also includes the first to fifth insulating regions 41a to 41e. In the semiconductor device 111, the third insulating region 41c includes a plurality of regions. In this example, the plurality of regions include, for example, a first region 45a, a second region 45b, and a third region 45c. The number of the plurality of regions can be two or more. The structure of the semiconductor device 111 other than this can be the same as that of the semiconductor device 110.

[0101] Figure 10 is a schematic cross-sectional view illustrating a part of a semiconductor device of the first embodiment.

[0102] Figure 10 The third insulating region 41c of the first insulating member 41 is illustrated. AsFigure 1 The third insulating region 41c includes the first region 45a, the second region 45b, and the first intermediate region 46a. The first region 45a and the second region 45b contain the first element. The first intermediate region 46a is provided between the first region 45a and the second region 45b. The first region 45a is, for example, between a portion 45bp of the second region 45b and the first partial region 11a in the second direction (X-axis direction).

[0103] The first intermediate region 46a does not contain the first element. Alternatively, the concentration of the first element in the first intermediate region 46a is lower than the concentration of the first element in the first region 45a and lower than the concentration of the first element in the second region 45b.

[0104] For example, the first region 45a and the second region 45b contain SiON. The first intermediate region 46a contains SiO2. The first region 45a and the second region 45b are, for example, laminated films that are laminated with the first intermediate region 46a interposed therebetween.

[0105] In the semiconductor device 111, a high withstand voltage can also be obtained. In the case where the third insulating region 41c includes a plurality of regions containing the first element, the concentration of the first element in the third insulating region 41c can be set to, for example, the average of the concentrations of the first element in the regions including the first region 45a, the second region 45b, and the first intermediate region 46a. For example, the average concentration can be set to the ratio of the sum of the product of the thickness of the region containing the first element and the concentration of the first element in the region containing the first element and the product of the thickness of the region containing substantially no first element and the concentration of the first element in the region containing substantially no first element to the sum of the thicknesses of these regions.

[0106] Figure 10 Such a configuration as illustrated can be obtained by sequentially laminating a film as the first region 45a, a film as the first intermediate region 46b, and a film as the second region 45b.

[0107] As Figure 10 The first region 45a is between the first electrode 51 and the other portion 45bq of the second region 45b in the first direction (Z-axis direction). The above-mentioned portion 45bp of the first region 45a and the second region 45b extends along the first direction (Z-axis direction). The other portion 45bq of the second region 45b is between a portion 45cp of the third region 45c and the first partial region 11a in the second direction (X-axis direction).

[0108] As Figure 10As shown, the third insulating region 41c may also include a third region 45c and a second intermediate region 46b. The third region 45c contains the first element. The second intermediate region 46b is disposed between the second region 45b and the third region 45c. The second region 45b is located in the second direction (X-axis direction) between a portion 45cp of the third region 45c and the first portion region 11a.

[0109] The second intermediate region 46b does not contain the first element. Alternatively, the concentration of the first element in the second intermediate region 46b is lower than the concentration of the first element in the second region 45b and lower than the concentration of the first element in the third region 45c. In this way, the number of multiple regions (multiple membranes) containing the first element can also be more than three.

[0110] In the case where the third insulating region 41c includes the aforementioned multiple regions containing the first element, for example, the concentration of the first element in the third insulating region 41c may be the average concentration of the first element in the regions including the first region 45a, the second region 45b, the third region 45c, the first intermediate region 46a, and the second intermediate region 46b.

[0111] like Figure 10 As shown, the other portion 45bq of the second region 45b is located between the first electrode 51 and the other portion 45cq of the third region 45c in the first direction (Z-axis direction). The aforementioned other portion 45bq of the second region 45b and the other portion 45cq of the third region 45c extend along the first direction (Z-axis direction).

[0112] Figure 11 This is a schematic cross-sectional view illustrating a portion of the semiconductor device according to the first embodiment.

[0113] like Figure 11 As shown, the third insulating region 41c includes multiple regions stacked together (first region 45a, second region 45b, third region 45c, first intermediate region 46a, and second intermediate region 46b, etc.). In this example, at least one of the first region 45a, second region 45b, and third region 45c also includes multiple granular regions 47z. The multiple regions 47z are separated from each other along a first direction (Z-axis direction). The multiple regions 47z contain a first element. In this case, the first element includes, for example, at least one element selected from the group including aluminum, hafnium, and zirconium. When the first element contains such a metallic element, it is easy to form multiple discrete regions 47z. With such multiple regions 47z, high withstand voltage can also be obtained.

[0114] like Figure 10 as well as Figure 11As shown, the first insulating member 41 may also include a third intermediate region 46c. The third intermediate region 46c is disposed between the first region 45a and the first partial region 11a in the second direction. For example, the third intermediate region 46c does not contain the first element. Alternatively, the concentration of the first element in the third intermediate region 46c is lower than the concentration of the first element in the first region 45a.

[0115] The distance along the second direction (X-axis direction) between the first region 45a and the first partial region 11a corresponds to the thickness tc1 of the third intermediate region 46c along the second direction (X-axis direction). The thickness tc1 is preferably 10 nm or less, for example. This can suppress the interface energy level in the region between the first region 45a and the first partial region 11b. High breakdown voltage can be stably obtained. The third intermediate region 46c can be provided in the semiconductor device 110 or the semiconductor device 110a.

[0116] Thus, the first insulating member 41 may also include a first insulating region 41a, a second insulating region 41b, and a third insulating region 41c. The third insulating region 41c may also include a first region 45a containing a first element (including an element selected from the group including nitrogen, aluminum, hafnium, and zirconium), a second region 45b containing the first element, and a first intermediate region 46a disposed between the first region 45a and the second region 45b. The first intermediate region 46a does not contain the first element. Alternatively, the concentration of the first element in the first intermediate region 46a is lower than the concentration of the first element in the first region 45a and lower than the concentration of the first element in the second region 45b.

[0117] The first insulating region 41a and the second insulating region 41b do not contain the first element. Alternatively, the concentration of the first element in the first insulating region 41a and the concentration of the first element in the second insulating region 41b are both lower than the concentration of the first element in the first region 45a and the concentration of the first element in the second region 45b.

[0118] As already explained, the first region 45a may be located between the first electrode 51 and the remaining portion 45bq of the second region 45b in the first direction (Z-axis direction). A portion 45bp of the first region 45a and the second region 45b extends along the first direction (Z-axis direction). The first region 45a may also include multiple regions 47z containing the first element, separated from each other in the first direction (Z-axis direction). The third insulating region 41c may also include the aforementioned third region 45c and the aforementioned second intermediate region 46b.

[0119] Figure 12 This is a schematic cross-sectional view illustrating a semiconductor device.

[0120] likeFigure 12 As shown, regions 45a-45c (first to third) include ends 45ae-45ce (first to third). End 45ae (first region) is the end of region 45a on one side of the third electrode 53. End 45be (second region) is the end of region 45b on one side of the third electrode 53. End 45ce (third region) is the end of region 45c on one side of the third electrode 53.

[0121] The distance along the first direction between the position of the first conductive member end 61a in the first direction and the position of the third electrode end 53a in the first direction is defined as the first distance d1. The distance along the first direction between the position of the first conductive member end 61a in the first direction (Z-axis direction) and the position of the first region end 45ae in the first direction is defined as the first end distance de1. The distance along the first direction between the position of the first conductive member end 61a in the first direction (Z-axis direction) and the position of the second region end 45be in the first direction is defined as the second end distance de2. The distance along the first direction between the position of the first conductive member end 61a in the first direction (Z-axis direction) and the position of the third region end 45ce in the first direction is defined as the third end distance de3.

[0122] The following are examples of simulation results illustrating the characteristics when the distances de1 to de3 between the first to third ends are changed.

[0123] Figure 13 (a)~ Figure 13 (c) is a graph illustrating the characteristics of a semiconductor device.

[0124] Figure 13 (a)~ Figure 13 (c) The respective horizontal axes correspond to the ratios de1 / d1, de2 / d1, and de3 / d1. The vertical axis of these graphs is the relative blocking voltage ΔBV. Preferably, the relative blocking voltage ΔBV is large. In these graphs, all values ​​of the ratios de1 / d1 (changed by 0.33–0.77), de2 / d1 (changed by 0.44–0.77), and de3 / d1 (changed by 0.44–0.88) are plotted. The curve Cv1 shown in these graphs corresponds to the maximum value of the relative blocking voltage ΔBV obtained when changing the above ratios. In these graphs, the fixed charge density in the trench transverse direction is 9 × 10⁻⁶. 14 cm -2 .

[0125] like Figure 13 As shown in (a), a large relative blocking voltage ΔBV can be stably obtained when the ratio de1 / d1 is 0.4 or higher and 0.7 or lower. A large relative blocking voltage ΔBV can also be stably obtained when the ratio de1 / d1 is 0.5 or higher.

[0126] like Figure 13 As shown in (b), a large relative blocking voltage ΔBV can be obtained when the ratio de2 / d1 is 0.55 or higher and 0.8 or lower. A large relative blocking voltage ΔBV can be stably obtained when the ratio de2 / d1 is 0.6 or higher and 0.7 or lower.

[0127] like Figure 13 As shown in (c), a large relative blocking voltage ΔBV can be obtained when the ratio de3 / d1 is 0.55 or higher and 0.9 or lower. A large relative blocking voltage ΔBV can be stably obtained when the ratio de3 / d1 is 0.7 or higher and 0.8 or lower.

[0128] like Figure 12 As shown, the positions of the ends of regions 45a-45c in the second direction do not change significantly. Therefore, in practice, the positions of the ends of regions 45a-45c in the second direction can be set as the position of the end 45cf of region 45c in the second direction. The distance along the second direction (e.g., the shortest distance) between the position of the end 61a of the first conductive member in the second direction (e.g., the X-axis direction) and the position of the end 44a in the second direction is set as the third distance x3. The distance along the second direction (e.g., the shortest distance) between the position of the end 61a of the first conductive member in the second direction (e.g., the X-axis direction) and the position of the end 45cf of the other end 44b in the second direction is set as the fourth distance x4. The position of the end 61a of the first conductive member in the second direction (e.g., the X-axis direction) in the X-axis direction is the position of the end of the first part of region 11a of the end 61a of the first conductive member in the second direction.

[0129] Figure 14 It is a graph illustrating the characteristics of a semiconductor device.

[0130] Figure 14 The characteristics of a semiconductor device 111 including regions 1 to 3, 45a to 45c, are illustrated. Figure 14 The horizontal axis represents the second ratio RR2. The second ratio RR2 is the ratio of the fourth distance x4 to the third distance x3. Figure 14 The vertical axis represents the relative blocking voltage ΔBV.

[0131] like Figure 14 As shown, in the semiconductor device 111, the second ratio RR2 is preferably 0.16 or higher and less than 1. The second ratio RR2 may also be 0.16 or higher and less than 0.7. This allows for a high blocking voltage ΔBV. In the embodiment, the second ratio RR2 may also be 0.36 or higher. The second ratio RR2 may also be 0.58 or higher.

[0132] Figure 15 This is a schematic cross-sectional view illustrating the semiconductor device of the first embodiment.

[0133] like Figure 15 As shown, in the semiconductor device 120 of the embodiment, the first conductive member 61 is electrically connected to the third electrode 53. Alternatively, the first conductive member 61 can be electrically connected to the third electrode 53. Other than this, the structure of the semiconductor device 120 can be the same as that of semiconductor devices 110, 110a, or 111.

[0134] For example, such as Figure 15 As shown, the first conductive member 61 is electrically connected to the third electrode 53 via connecting member 61C, connecting member 52LL, and connecting member 52C. These connecting members can be disposed in connection with... Figure 15 The illustrated cross-sections show different locations. For example, terminal 52T may be connected to the third electrode 53 via connecting member 52C. Terminal 61T may be electrically connected to the first conductive member 61 via connecting member 61C. Terminal 61T may also be electrically connected to terminal 52T via connecting member 52LL. ​​Connecting member 52LL may also be provided separately from semiconductor device 120. High withstand voltage can also be obtained in semiconductor device 120, for example.

[0135] Figure 16 This is a schematic cross-sectional view illustrating the semiconductor device of the first embodiment.

[0136] like Figure 16 As shown, in the semiconductor device 130 of the embodiment, a portion of the first conductive member 61 overlaps with the third electrode 53 in the second direction (X-axis direction). Other than this, the structure in the semiconductor device 120 can be the same as that in semiconductor devices 110, 110a, 111, or 120. In the semiconductor device 120, for example, a high withstand voltage can also be obtained.

[0137] (Second Implementation)

[0138] The second embodiment relates to a method for manufacturing a semiconductor device.

[0139] Figures 17-23 This is a schematic cross-sectional view illustrating the process sequence of a semiconductor device manufacturing method according to the second embodiment.

[0140] like Figure 17As shown, a semiconductor component 10 is prepared. The semiconductor component 10 includes a hole 10H. The hole 10H can also be a trench, for example. The hole 10H includes a bottom surface 10B, a lower side surface 10LS, and a top side surface 10US. The distance between the lower side surface 10LS and the bottom surface 10B is shorter than the distance between the top side surface 10US and the bottom surface 10B. Such a hole can be formed, for example, by removing a portion of the semiconductor layer that is part of the semiconductor component 10. The removal of a portion can be carried out, for example, by etching using a mask.

[0141] The depth (length along the Z-axis) of the hole 10H is, for example, more than 2 μm and less than 10 μm. The bottom surface of the hole 10H is located in the first semiconductor region 11.

[0142] An oxide region 10R can be formed on the surface of the formed hole 10H as needed. The oxide region 10R can be formed, for example, by thermal oxidation. The thickness of the oxide region 10R can be, for example, greater than 200 nm and less than 1000 nm. In one example, the thickness of the oxide region 10R can be the same as the thickness tc1 (refer to...). Figure 10 as well as Figure 11 They are essentially the same.

[0143] like Figure 18 As shown, a first film 81 is formed on the bottom surface 10B, lower side surface 10LS, and upper side surface 10US of the hole 10H in the semiconductor component 10. The first film 81 contains a first element. The first element includes at least one element selected from the group including nitrogen, aluminum, hafnium, and zirconium. The first film 81 includes a first bottom surface region 81B disposed on the bottom surface 10B, a first lower side surface region 81L disposed on the lower side surface 10LS, and a first upper side surface region 81U disposed on the upper side surface 10US.

[0144] like Figure 19 As shown, the first lower side surface region 81L is left, and the first bottom surface region 81B and the first upper side surface region 81U are removed. Removal can be performed using etching with a mask (e.g., dry etching). Thus, the bottom surface 10B and the upper side surface 10US of the hole 10H are exposed.

[0145] like Figure 20 As shown, a second film 82 containing a second element is formed on the bottom surface 10B of the aperture 10H, the first lower side surface region 81L, and the upper side surface 10US of the aperture 10H. The second element includes at least one element selected from the group including nitrogen, aluminum, hafnium, and zirconium.

[0146] At this time, a first insulating film 71 may also be formed between the removal of the first bottom surface region 81B and the first upper surface region 81U and the formation of the second film 82. The first insulating film 71 contains silicon and oxygen. The first insulating film 71 substantially does not contain the first element or the second element. The first insulating film 71 is, for example, a SiO2 film. The first insulating film 71 is formed on the bottom surface 10B, the first lower surface region 81L, and the upper surface region 10US. In this case, the second film 82 is formed on the first insulating film 71.

[0147] The second membrane 82 includes a second bottom surface region 82B disposed on the bottom surface 10B of the hole 10H, a second lower side surface region 82L disposed on the first lower side surface region 81L, and a second upper side surface region 82U disposed on the upper side surface 10US of the hole 10H.

[0148] like Figure 21 As shown, the second lower side surface region 82L is left, and the second bottom surface region 82B and the second upper side surface region 82U are removed. For example, the bottom surface 10B and the upper side surface 10US of the hole 10H are exposed.

[0149] like Figure 22 As shown, a second insulating film 72 is formed on the bottom surface 10B of the hole 10H, the second lower side surface region 82L, and the upper side surface 10US of the hole 10H. The second insulating film 72 contains silicon and oxygen. The second insulating film 72 is, for example, a SiO2 film.

[0150] Alternatively, a third membrane containing either the first or second element may be formed, similar to the formation of the second membrane 82 described above, as needed. These membranes may correspond, for example, to the first to third regions 45a to 45c described above.

[0151] like Figure 23 As shown, a first conductive member 61 is formed in the hole 10H after the formation of the second insulating film 72.

[0152] Thus, for example, a semiconductor device 111 can be formed. According to the manufacturing method of the embodiment, a method for manufacturing a semiconductor device that can improve its characteristics can be provided.

[0153] In the above embodiment, the carrier concentration of the first conductivity type in the first semiconductor region 11 is preferably, for example, 1.0 × 10⁻⁶. 15 cm -3 Above and 1.0×10 17 cm -3 The carrier concentration of the second conductivity type in the second semiconductor region 12 is preferably, for example, 1.0 × 10⁻⁶. 16 cm -3 Above and 1.0×10 18 cm -3The carrier concentration of the first conductivity type in the third semiconductor region 13 is preferably, for example, 3.0 × 10⁻⁶. 18 cm -3 Above and 3.0×10 20 cm -3 The carrier concentration of the first conductivity type in the fourth semiconductor region 14 is preferably, for example, 1.0 × 10⁻⁶. 17 cm -3 Above and 3.0×10 20 cm -3 The carrier concentration of the second conductivity type in the fifth semiconductor region 15 is preferably, for example, 1.0 × 10⁻⁶. 18 cm -3 Above and 3.0×10 20 cm -3 the following.

[0154] In the above embodiments, for example, the impurity concentration of the first conductivity type in the third semiconductor region 13 is higher than the impurity concentration of the first conductivity type in the first semiconductor region 11. For example, the impurity concentration of the first conductivity type in the fourth semiconductor region 14 is higher than the impurity concentration of the first conductivity type in the first semiconductor region 11. For example, the impurity concentration of the second conductivity type in the fifth semiconductor region 15 is higher than the impurity concentration of the second conductivity type in the second semiconductor region 12.

[0155] The impurity concentration of the first conductivity type in the first semiconductor region 11 is preferably, for example, 1.0 × 10⁻⁶. 15 cm -3 Above and 1.0×10 17 cm -3 The impurity concentration of the second conductivity type in the second semiconductor region 12 is preferably, for example, 1.0 × 10⁻⁶. 16 cm -3 Above and 1.0×10 18 cm -3 The following applies. The impurity concentration of the first conductivity type in the third semiconductor region 13 is preferably, for example, 3.0 × 10⁻⁶. 18 cm -3 Above and 3.0×10 20 cm -3 The following applies. The impurity concentration of the first conductivity type in the fourth semiconductor region 14 is preferably, for example, 1.0 × 10⁻⁶. 17 cm -3 Above and 3.0×10 20 cm -3 The following applies. The impurity concentration of the second conductivity type in the fifth semiconductor region 15 is preferably, for example, 1.0 × 10⁻⁶. 18 cm -3 Above and 3.0×1020 cm -3 the following.

[0156] In this embodiment, information related to the shape of the semiconductor region can be obtained, for example, by observation using an electron microscope. Information related to the concentration of the first element can be obtained, for example, by EDX (Energy Dispersive X-ray Spectroscopy) or SIMS (Secondary Ion Mass Spectrometry). Information related to the carrier concentration in the semiconductor region can be obtained, for example, by SCM (Scanning Capacitance Microscopy).

[0157] The implementation methods may include the following technical solutions.

[0158] (Technical Solution 1)

[0159] A semiconductor device, comprising:

[0160] Electrode 1;

[0161] The second electrode is located along the first direction from the first electrode toward the second electrode;

[0162] The third electrode includes a third electrode end and a third electrode other end, wherein the third electrode end is located between the first electrode and the third electrode other end in the first direction;

[0163] A first conductive member, comprising a first conductive member end and a first conductive member other end, the first conductive member end being located between the first electrode and the first conductive member other end in the first direction, the position of the first conductive member end in the first direction being between the position of the first electrode in the first direction and the position of the third electrode end in the first direction, the first conductive member being electrically connected to one of the second electrode and the third electrode, or the first conductive member being capable of being electrically connected to one of them;

[0164] A semiconductor component, the semiconductor component comprising a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type.

[0165] The first semiconductor region includes a first partial region and a second partial region.

[0166] The first portion of the region is located between the first electrode and the second electrode in the first direction.

[0167] The second semiconductor region is located between the first partial region and the third semiconductor region in the first direction.

[0168] The third semiconductor region is electrically connected to the second electrode.

[0169] A second direction from a portion of the third electrode toward the second semiconductor region intersects with the first direction.

[0170] From another part of the third electrode toward a part of the first region along the second direction

[0171] From the second portion of the region toward the first conductive member along the first direction

[0172] The direction from the first conductive member toward the first partial region along the second direction; and

[0173] A first insulating member comprising silicon and oxygen, the first insulating member comprising a first position, a second position, and a third position, the first position being located in a first direction between the second partial region and the end of the first conductive member, the second position being located in a second direction between the first conductive member and the first partial region, the direction from the first position to the third position along the second direction, the third position being located in the first direction between the position of the second partial region in the first direction and the position of the second position in the first direction, the first insulating member comprising a first element at the third position, the first element comprising at least one element selected from the group comprising nitrogen, aluminum, hafnium, and zirconium, the first insulating member not comprising the first element at the first position and the second position, or the concentration of the first element at the first position and the concentration of the first element at the second position are respectively lower than the concentration of the first element at the third position.

[0174] (Technical Solution 2)

[0175] According to the semiconductor device described in technical solution 1, wherein,

[0176] The first insulating member includes a fourth position.

[0177] The fourth position in the first direction is located between the position of the third position in the first direction and the position of the second position in the first direction.

[0178] The concentration of the first element at the fourth position is between the concentration of the first element at the third position and the concentration of the first element at the second position.

[0179] (Technical Solution 3)

[0180] According to the semiconductor device described in technical solution 1 or 2, wherein,

[0181] The first insulating member includes a fifth position.

[0182] The fifth position is located between the third electrode and the second semiconductor region in the second direction.

[0183] The first insulating member does not contain the first element at the fifth position, or the concentration of the first element at the fifth position is lower than the concentration of the first element at the third position.

[0184] (Technical Solution 4)

[0185] A semiconductor device, comprising:

[0186] Electrode 1;

[0187] The second electrode is located along the first direction from the first electrode toward the second electrode;

[0188] The third electrode includes a third electrode end and a third electrode other end, wherein the third electrode end is located between the first electrode and the third electrode other end in the first direction;

[0189] A first conductive member, comprising a first conductive member end and a first conductive member other end, the first conductive member end being located between the first electrode and the first conductive member other end in the first direction, the position of the first conductive member end in the first direction being between the position of the first electrode in the first direction and the position of the third electrode end in the first direction, the first conductive member being electrically connected to one of the second electrode and the third electrode, or the first conductive member being capable of being electrically connected to one of them;

[0190] A semiconductor component, the semiconductor component comprising a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type.

[0191] The first semiconductor region includes a first partial region and a second partial region.

[0192] The first portion of the region is located between the first electrode and the second electrode in the first direction.

[0193] The second semiconductor region is located between the first partial region and the third semiconductor region in the first direction.

[0194] The third semiconductor region is electrically connected to the second electrode.

[0195] A second direction from a portion of the third electrode toward the second semiconductor region intersects with the first direction.

[0196] From another part of the third electrode toward a part of the first region along the second direction

[0197] From the second portion of the region toward the first conductive member along the first direction

[0198] The direction from the first conductive member toward the first partial region along the second direction; and

[0199] The first insulating component comprises silicon and oxygen, and includes a first insulating region, a second insulating region, and a third insulating region.

[0200] The first insulating region is located in the first direction between the second partial region and the end of the first conductive member.

[0201] The second insulating region is located in the second direction between the first conductive member and the first partial region.

[0202] The direction from the first insulating region to at least a portion of the third insulating region along the second direction,

[0203] The third insulating region is located in the first direction between the position of the second partial region in the first direction and the position of the second insulating region in the first direction.

[0204] The third insulating region includes a first element, which comprises at least one element selected from the group including nitrogen, aluminum, hafnium, and zirconium.

[0205] The first insulating region and the second insulating region do not contain the first element, or the concentration of the first element in the first insulating region and the concentration of the first element in the second insulating region are lower than the concentration of the first element in the third insulating region.

[0206] (Technical Solution 5)

[0207] According to the semiconductor device described in technical solution 4, wherein,

[0208] The first insulating member includes a fourth insulating region.

[0209] The fourth insulating region is located in the first direction between the positions of the third insulating region and the second insulating region in the first direction.

[0210] The concentration of the first element in the fourth insulating region is between the concentration of the first element in the third insulating region and the concentration of the first element in the second insulating region.

[0211] (Technical Solution 6)

[0212] According to the semiconductor device described in technical solution 4 or 5, wherein,

[0213] The first insulating member includes the fifth insulating region.

[0214] The fifth insulating region is located between the third electrode and the second semiconductor region in the second direction.

[0215] The fifth insulating region does not contain the first element, or the concentration of the first element in the fifth insulating region is lower than the concentration of the first element in the third insulating region.

[0216] (Technical Solution 7)

[0217] The semiconductor device according to any one of technical solutions 4 to 6, wherein,

[0218] The third insulating region includes:

[0219] Region 1 contains the first element;

[0220] The second region contains the first element; and

[0221] The first intermediate region is located between the first region and the second region.

[0222] The first region is located in the second direction between a portion of the second region and the first partial region.

[0223] The first intermediate region does not contain the first element, or the concentration of the first element in the first intermediate region is lower than the concentration of the first element in the first region and lower than the concentration of the first element in the second region.

[0224] (Technical Solution 8)

[0225] According to the semiconductor device described in technical solution 7, wherein,

[0226] The first region is located in the first direction between the first electrode and other parts of the second region.

[0227] (Technical Solution 9)

[0228] According to the semiconductor device described in technical solution 7 or 8, wherein,

[0229] The first region and a portion thereof extend along the first direction.

[0230] (Technical Solution 10)

[0231] The semiconductor device according to any one of technical solutions 7 to 9, wherein,

[0232] The first region comprises a plurality of regions containing the first element that are separated from each other in the first direction.

[0233] (Technical Solution 11)

[0234] The semiconductor device described in any one of technical solutions 7 to 10, wherein,

[0235] The third insulating region also includes:

[0236] The third region contains the first element; and

[0237] The second intermediate region is located between the second region and the third region.

[0238] The second region is located in the second direction between a portion of the third region and the first portion region.

[0239] The second intermediate region does not contain the first element, or the concentration of the first element in the second intermediate region is lower than the concentration of the first element in the second region and lower than the concentration of the first element in the third region.

[0240] (Technical Solution 12)

[0241] According to the semiconductor device described in technical solution 11, wherein,

[0242] The other portions of the second region are located between the first electrode and the other portions of the third region in the first direction.

[0243] (Technical Solution 13)

[0244] The semiconductor device according to any one of technical solutions 4 to 12, wherein,

[0245] The third insulating region includes an end in the first direction and another end in the first direction.

[0246] The first end in the first direction is located between the second portion region and the other end in the first direction.

[0247] The ratio of the second distance to the first distance is greater than 0.15 and less than 0.85.

[0248] The first distance is the distance along the first direction between the position of the end of the first conductive member in the first direction and the position of the end of the third electrode in the first direction.

[0249] The second distance is the distance along the first direction between the position of the end of the first conductive member in the first direction and the position of the other end in the first direction.

[0250] (Technical Solution 14)

[0251] The semiconductor device according to any one of technical solutions 4 to 13, wherein,

[0252] The third insulating region includes a second-direction end and another second-direction end.

[0253] The second-direction end is located between the other end in the second direction and the first portion region in the second direction.

[0254] The ratio of the fourth distance to the second distance of the third distance is greater than 0.16 and less than 0.9.

[0255] The third distance is the distance along the second direction between the position of the end of the first conductive member in the second direction and the position of the end in the second direction in the second direction.

[0256] The fourth distance is the distance along the second direction between the position of the end of the first conductive member in the second direction and the position of the other end in the second direction.

[0257] (Technical Solution 15)

[0258] A semiconductor device comprising:

[0259] Electrode 1;

[0260] The second electrode is located along the first direction from the first electrode toward the second electrode;

[0261] The third electrode includes a third electrode end and a third electrode other end, wherein the third electrode end is located between the first electrode and the third electrode other end in the first direction;

[0262] A first conductive member, comprising a first conductive member end and a first conductive member other end, the first conductive member end being located between the first electrode and the first conductive member other end in the first direction, the position of the first conductive member end in the first direction being between the position of the first electrode in the first direction and the position of the third electrode end in the first direction, the first conductive member being electrically connected to one of the second electrode and the third electrode, or the first conductive member being capable of being electrically connected to one of them;

[0263] A semiconductor component, the semiconductor component comprising a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type.

[0264] The first semiconductor region includes a first partial region and a second partial region.

[0265] The first portion of the region is located between the first electrode and the second electrode in the first direction.

[0266] The second semiconductor region is located between the first partial region and the third semiconductor region in the first direction.

[0267] The third semiconductor region is electrically connected to the second electrode.

[0268] A second direction from a portion of the third electrode toward the second semiconductor region intersects with the first direction.

[0269] From another part of the third electrode toward a part of the first region along the second direction

[0270] From the second portion of the region toward the first conductive member along the first direction

[0271] The direction from the first conductive member toward the first partial region along the second direction; and

[0272] The first insulating component comprises silicon and oxygen, and includes a first insulating region, a second insulating region, and a third insulating region.

[0273] The first insulating region is located in the first direction between the second partial region and the end of the first conductive member.

[0274] The second insulating region is located in the second direction between the first conductive member and the first partial region.

[0275] The direction from the first insulating region to at least a portion of the third insulating region along the second direction,

[0276] The third insulating region is located in the first direction between the position of the second partial region in the first direction and the position of the second insulating region in the first direction.

[0277] The third insulating region includes:

[0278] The first region contains the first element, which includes at least one element selected from the group including nitrogen, aluminum, hafnium and zirconium;

[0279] The second region contains the first element; and

[0280] The first intermediate region is located between the first region and the second region.

[0281] The first region is located in the second direction between a portion of the second region and the first partial region.

[0282] The first intermediate region does not contain the first element, or the concentration of the first element in the first intermediate region is lower than the concentration of the first element in the first region and lower than the concentration of the first element in the second region.

[0283] The first insulating region and the second insulating region do not contain the first element, or the concentration of the first element in the first insulating region and the concentration of the first element in the second insulating region are lower than the concentration of the first element in the first region and lower than the concentration of the first element in the second region, respectively.

[0284] (Technical Solution 16)

[0285] According to the semiconductor device described in technical solution 15, wherein,

[0286] The first region is located in the first direction between the first electrode and other parts of the second region.

[0287] (Technical Solution 17)

[0288] According to the semiconductor device described in technical solution 16, wherein,

[0289] The third insulating region also includes:

[0290] The third region contains the first element; and

[0291] The second intermediate region is located between the second region and the third region.

[0292] The second region is located in the second direction between a portion of the third region and the first portion region.

[0293] The second intermediate region does not contain the first element, or the concentration of the first element in the second intermediate region is lower than the concentration of the first element in the second region and lower than the concentration of the first element in the third region.

[0294] (Technical Solution 18)

[0295] A method for manufacturing a semiconductor device, wherein,

[0296] A first film comprising a first element is formed on the bottom, lower, and upper surfaces of a semiconductor component including a hole comprising a bottom surface, a lower side surface, and a top surface. The first element includes at least one element selected from the group comprising nitrogen, aluminum, hafnium, and zirconium. The distance between the lower side surface and the bottom surface is shorter than the distance between the upper side surface and the bottom surface. The first film includes a first bottom surface region disposed on the bottom surface, a first lower side surface region disposed on the lower side surface, and a first upper side surface region disposed on the upper surface.

[0297] The first lower side surface region is retained, while the first bottom surface region and the first upper side surface region are removed.

[0298] A second film comprising a second element is formed on the bottom surface, the first lower side surface region, and the upper side surface. The second element includes at least one element selected from the group comprising nitrogen, aluminum, hafnium, and zirconium. The second film includes a second bottom surface region disposed on the bottom surface, a second lower side surface region disposed on the first lower side surface region, and a second upper side surface region disposed on the upper side surface.

[0299] The second lower side surface area is retained, while the second bottom surface area and the second upper side surface area are removed.

[0300] A second insulating film comprising silicon and oxygen is formed on the bottom surface, the second lower side surface region, and the upper side surface.

[0301] A first conductive member is formed in the hole after the formation of the second insulating film.

[0302] (Technical Solution 19)

[0303] According to the semiconductor device manufacturing method described in technical solution 18, wherein,

[0304] Before the formation of the first film, an oxide region is formed on the surface of the pore.

[0305] (Technical Solution 20)

[0306] According to the manufacturing method of the semiconductor device described in technical solution 18 or 19, wherein,

[0307] Between the removal of the first bottom surface region and the formation of the first upper surface region,

[0308] A first insulating film comprising silicon and oxygen is formed on the bottom surface, the first lower side surface region, and the upper side surface.

[0309] The second film is formed on the first insulating film.

[0310] According to the embodiments, a semiconductor device and a method for manufacturing the same can be provided that can improve performance.

[0311] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, any specific structure of the various elements included in a semiconductor device, such as semiconductor components, semiconductor regions, conductive components, electrodes, and insulating components, is included within the scope of the present invention as long as those skilled in the art can appropriately select from the known scope and similarly implement the present invention to obtain the same effects.

[0312] Furthermore, any structure formed by combining any two or more elements of the various specific examples within a technically possible range is also included within the scope of this invention, as long as it contains the essence of the invention.

[0313] In addition, as embodiments of the present invention, all semiconductor devices implemented by those skilled in the art based on the above-described semiconductor device, which can be appropriately modified by design, are also within the scope of the present invention as long as they contain the spirit of the present invention.

[0314] In addition, it should be understood that within the scope of the ideas of this invention, any person skilled in the art can conceive of various modifications and alterations, and these modifications and alterations also fall within the scope of this invention.

[0315] Several embodiments of the present invention have been described, but these embodiments are provided by way of example and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, and are included in the scope of the invention as set forth in the patent claims and its equivalents.

Claims

1. A semiconductor device comprising: Electrode 1; The second electrode is located along the first direction from the first electrode toward the second electrode; The third electrode includes a third electrode end and a third electrode other end, wherein the third electrode end is located between the first electrode and the third electrode other end in the first direction; A first conductive member, comprising a first conductive member end and a first conductive member other end, wherein the first conductive member end is located between the first electrode and the first conductive member other end in the first direction, and the position of the first conductive member end in the first direction is between the position of the first electrode in the first direction and the position of the third electrode end in the first direction, and the first conductive member is electrically connected to one of the second electrode and the third electrode; A semiconductor component, the semiconductor component comprising a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type. The first semiconductor region includes a first partial region and a second partial region. The first portion of the region is located between the first electrode and the second electrode in the first direction. The second semiconductor region is located between the first partial region and the third semiconductor region in the first direction. The third semiconductor region is electrically connected to the second electrode. A second direction from a portion of the third electrode toward the second semiconductor region intersects with the first direction. From another part of the third electrode toward a part of the first region along the second direction From the second portion of the region toward the first conductive member along the first direction The direction from the first conductive member toward the first partial region along the second direction; and The first insulating component comprises silicon and oxygen, and includes a first insulating region, a second insulating region, and a third insulating region. The first insulating region is located in the first direction between the second partial region and the end of the first conductive member. The second insulating region is located in the second direction between the first conductive member and the first partial region. The direction from the first insulating region to at least a portion of the third insulating region along the second direction, The third insulating region is located in the first direction between the position of the second partial region in the first direction and the position of the second insulating region in the first direction. The third insulating region includes: The first region contains the first element, which includes at least one element selected from the group including nitrogen and hafnium; The second region contains the first element; and The first intermediate region is located between the first region and the second region. The first region is located in the second direction between a portion of the second region and the first partial region. The first intermediate region does not contain the first element, or the concentration of the first element in the first intermediate region is lower than the concentration of the first element in the first region and lower than the concentration of the first element in the second region. The first insulating region and the second insulating region do not contain the first element, or the concentration of the first element in the first insulating region and the concentration of the first element in the second insulating region are respectively lower than the concentration of the first element in the first region and lower than the concentration of the first element in the second region. The first region is located in the first direction between the first electrode and other portions of the second region, the first region and a portion of the second region extending along the first direction, and the other portions of the second region extending in the first direction.

2. A semiconductor device, comprising: Electrode 1; The second electrode is located along the first direction from the first electrode toward the second electrode; The third electrode includes a third electrode end and a third electrode other end, wherein the third electrode end is located between the first electrode and the third electrode other end in the first direction; A first conductive member, comprising a first conductive member end and a first conductive member other end, wherein the first conductive member end is located between the first electrode and the first conductive member other end in the first direction, and the position of the first conductive member end in the first direction is between the position of the first electrode in the first direction and the position of the third electrode end in the first direction, and the first conductive member is electrically connected to one of the second electrode and the third electrode; A semiconductor component, the semiconductor component comprising a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type. The first semiconductor region includes a first partial region and a second partial region. The first portion of the region is located between the first electrode and the second electrode in the first direction. The second semiconductor region is located between the first partial region and the third semiconductor region in the first direction. The third semiconductor region is electrically connected to the second electrode. A second direction from a portion of the third electrode toward the second semiconductor region intersects with the first direction. From another part of the third electrode toward a part of the first region along the second direction From the second portion of the region toward the first conductive member along the first direction The direction from the first conductive member toward the first partial region follows the second direction; as well as A first insulating member, comprising silicon and oxygen, includes a first position, a second position, and a third position. The first position is located in a first direction between the second partial region and the end of the first conductive member. The second position is located in a second direction between the first conductive member and the first partial region, extending from the first position to the third position along the second direction. The third position in the first direction is located between the position of the second partial region in the first direction and the position of the second position in the first direction. The first insulating member at the third position contains a first element, which includes at least one element selected from the group comprising nitrogen, aluminum, hafnium, and zirconium. The first insulating member does not contain the first element at the first and second positions, or the concentration of the first element at the first position and the concentration of the first element at the second position are respectively lower than the concentration of the first element at the third position. in, The third position includes: Region 1 contains the first element; The second region contains the first element; and The first intermediate region is located between the first region and the second region. The first region is located in the second direction between a portion of the second region and the first partial region. The first intermediate region does not contain the first element, or the concentration of the first element in the first intermediate region is lower than the concentration of the first element in the first region and lower than the concentration of the first element in the second region. The first region is located in the first direction between the first electrode and the other parts of the second region. The first region and a portion thereof extend along the first direction. The first region includes regions of a plurality of the first elements that are separated from each other in the first direction. The other portions of the second region extend in the first direction.

3. The semiconductor device according to claim 2, wherein, The third position also includes: The third region contains the first element; and The second intermediate region is located between the second region and the third region. The second region is located in the second direction between a portion of the third region and the first portion region. The second intermediate region does not contain the first element, or the concentration of the first element in the second intermediate region is lower than the concentration of the first element in the second region and lower than the concentration of the first element in the third region.

4. The semiconductor device according to claim 3, wherein, The other portions of the second region are located between the first electrode and the other portions of the third region in the first direction.

5. The semiconductor device according to any one of claims 2 to 4, wherein, The third position includes the end in the first direction and the other end in the first direction. The first end in the first direction is located between the second portion region and the other end in the first direction. The ratio of the second distance to the first distance is greater than 0.15 and less than 0.

85. The first distance is the distance along the first direction between the position of the end of the first conductive member in the first direction and the position of the end of the third electrode in the first direction. The second distance is the distance along the first direction between the position of the end of the first conductive member in the first direction and the position of the other end in the first direction in the first direction.

6. The semiconductor device according to any one of claims 2 to 4, wherein, The third position includes the end in the second direction and the other end in the second direction. The second-direction end is located between the other end in the second direction and the first portion region in the second direction. The ratio of the fourth distance to the second distance of the third distance is greater than 0.16 and less than 0.

9. The third distance is the distance along the second direction between the position of the end of the first conductive member in the second direction and the position of the end in the second direction in the second direction. The fourth distance is the distance along the second direction between the position of the end of the first conductive member in the second direction and the position of the other end in the second direction.

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