Semiconductor device

Abstract

A semiconductor device is provided. Characteristics can be stabilized. According to an embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first conductive member, and an insulating member. A position of the third electrode in a first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The insulating member includes a first nitride region and a second nitride region. A first ratio of a concentration of silicon to a concentration of nitrogen in the first nitride region is lower than a second ratio of a concentration of silicon to a concentration of nitrogen in the second nitride region. The first nitride region includes a first nitride end portion. The first nitride end portion is in contact with the second semiconductor region and opposes the second nitride region in the first direction. A position of the first nitride end portion in the first direction is between a position of a first conductive end portion in the first direction and the position of the second electrode in the first direction.

Description

[0001] This application is based on Japanese Patent Application No. 2021-095641 (Filing date: June 8, 2021) and Japanese Patent Application No. 2021-192774 (Filing date: November 29, 2021) priority of which is claimed. This application contains the subject matter of the aforementioned applications, which is incorporated herein by reference. TECHNICAL FIELD

[0002] Embodiments of the present application relate to a semiconductor device. BACKGROUND

[0003] In a semiconductor device, stable characteristics are desired. SUMMARY

[0004] Embodiments of the present application provide a semiconductor device capable of stabilizing characteristics.

[0005] According to an embodiment of the present application, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first conductive member, and an insulating member. A direction from the first electrode to the second electrode is along a first direction. A position of the third electrode in the first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The first semiconductor region contains Al x1 Ga 1-x1 N (0 ≤ x1 < 1). The first semiconductor region includes a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, and a sixth partial region. A direction from the first partial region to the first electrode, a direction from the second partial region to the second electrode, and a direction from the third partial region to the third electrode are along a second direction intersecting the first direction. The fourth partial region is between the first partial region and the third partial region in the first direction. The fifth partial region is between the third partial region and the second partial region in the first direction. The sixth partial region is between the fifth partial region and the second partial region in the first direction. The second semiconductor region contains Al x2 Ga 1-x2N (0 < x2≤ 1, x1< x2). The second semiconductor region includes a first semiconductor portion, a second semiconductor portion, and a third semiconductor portion. The second direction from the fourth partial region to the first semiconductor portion. The first conductive member is electrically connected to a first one of the first electrode and the third electrode. Alternatively, the first conductive member can be electrically connected to the first one of the first electrode and the third electrode. The first conductive member includes a first conductive end portion in the first direction. A position of the first conductive end portion in the first direction is between a position of the third electrode in the first direction and a position of the second electrode in the first direction. The insulating member includes a first nitride region and a second nitride region. The second semiconductor portion is between the fifth partial region and the first nitride region in the second direction. The third semiconductor portion is between the sixth partial region and the second nitride region in the second direction. The first nitride region contains silicon and nitrogen. The second nitride region contains silicon and nitrogen. A first ratio of a concentration of silicon to a concentration of nitrogen in the first nitride region is lower than a second ratio of a concentration of silicon to a concentration of nitrogen in the second nitride region. The first nitride region includes a first nitride end portion. The first nitride end portion is in contact with the second semiconductor region, and is opposite to the second nitride region in the first direction. A position of the first nitride end portion in the first direction is between the position of the first conductive end portion in the first direction and the position of the second electrode in the first direction.

[0006] According to the structure, the semiconductor device capable of stabilizing characteristics can be provided. BRIEF DESCRIPTION OF DRAWINGS

[0007] Figure 1 is a schematic cross-sectional view illustrating a semiconductor device according to a first embodiment.

[0008] Figure 2 is a graph illustrating characteristics of a semiconductor device.

[0009] Figure 3 is a schematic cross-sectional view illustrating a semiconductor device according to a first embodiment.

[0010] Figure 4 is a schematic cross-sectional view illustrating a semiconductor device according to a first embodiment.

[0011] Figure 5 is a schematic cross-sectional view illustrating a semiconductor device according to a first embodiment.

[0012] Figure 6 is a schematic cross-sectional view illustrating a semiconductor device according to a first embodiment.

[0013] Figure 7 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0014] Figure 8 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0015] Figure 9 is a schematic cross-sectional view illustrating a semiconductor device according to the second embodiment.

[0016] Figure 10 is a schematic cross-sectional view illustrating a semiconductor device according to the third embodiment.

[0017] Figure 11 is a schematic cross-sectional view illustrating a semiconductor device according to the third embodiment.

[0018] Figure 12 is a schematic cross-sectional view illustrating a semiconductor device according to the fourth embodiment.

[0019] Figure 13 is a schematic cross-sectional view illustrating a semiconductor device according to the fourth embodiment.

[0020] (Symbol Explanation)

[0021] 10: first semiconductor region; 10C: carrier region; 10a-10f: first to sixth partial regions; 10s: base; 11B: nitride layer; 20: second semiconductor region; 21-24: first to fourth semiconductor portions; 30: third semiconductor region; 40: insulating member; 40p: a portion; 41-43: first to third nitride regions; 41e: first nitride end portion; 45: first insulating film; 45a-45e: first to fifth insulating regions; 51-53: first to third electrodes; 52e: second electrode end portion; 53a: a portion; 61-63: first to third conductive members; 61e-63e: first to third conductive end portions; 61G, 61S, 62G, 63D: connecting members; 110, 110a-110c, 111-113, 120, 130, 131, 140, 141: semiconductor device; CC1: resistance increase rate; L1, L2: first and second distances; RL: ratio; t1, t2: thickness DETAILED DESCRIPTION

[0022] Hereinafter, each embodiment of the present application will be described with reference to the drawings.

[0023] The drawings are schematic or conceptual; the proportions of the parts, the relative sizes, etc., are not always to scale and are shown merely by way of illustrative example. Even in cases where the same parts are denoted by the same reference numerals, the dimensions, ratios, etc., thereof can differ among the drawings.

[0024] In the present application specification and the drawings, with respect to the drawings, the same elements as the aforementioned elements are added with the same symbol and the detailed description is appropriately omitted.

[0025] (First Embodiment)

[0026] Figure 1 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0027] As Figure 1 indicated, the semiconductor device 110 according to the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a first semiconductor region 10, a second semiconductor region 20, a first conductive member 61, and an insulating member 40.

[0028] The first direction is along a direction from the first electrode 51 to the second electrode 52. The first direction is set as an X-axis direction. One direction perpendicular to the X-axis direction is set as a Z-axis direction. A direction perpendicular to the X-axis direction and the Z-axis direction is set as a Y-axis direction.

[0029] The position of the third electrode 53 in the first direction (X-axis direction) is between the position of the first electrode 51 in the first direction and the position of the second electrode 52 in the first direction. In one example, at least a part of the third electrode 53 is between the first electrode 51 and the second electrode 52 in the first direction.

[0030] The first semiconductor region 10 contains Al x1 Ga 1-x1 N (0 ≤ x1 < 1). The composition ratio x1 is, for example, 0 or more and less than 0.2. In one example, the first semiconductor region 10 is a GaN layer. Alternatively, the first semiconductor region 10 can also be an AlGaN layer with a low Al composition ratio (for example, less than 0.2).

[0031] The first semiconductor region 10 includes a first partial region 10a, a second partial region 10b, a third partial region 10c, a fourth partial region 10d, a fifth partial region 10e, and a sixth partial region 10f. A direction from the first partial region 10a to the first electrode 51, a direction from the second partial region 10b to the second electrode 52, and a direction from the third partial region 10c to the third electrode 53 are along a second direction. The second direction is, for example, a Z-axis direction. The first partial region 10a is, for example, a portion that overlaps the first electrode 51 in the second direction. The second partial region 10b is, for example, a portion that overlaps the second electrode 52 in the second direction. The third partial region 10c is, for example, a portion that overlaps the third electrode 53 in the second direction.

[0032] The fourth partial region 10d is between the first partial region 10a and the third partial region 10c in the first direction (X-axis direction). The fifth partial region 10e is between the third partial region 10c and the second partial region 10b in the first direction. The sixth partial region 10f is between the fifth partial region 10e and the second partial region 10b in the first direction. The mutual boundaries of the first to sixth partial regions 10a to 10f can also be indefinite. Each of these partial regions can also be a "partial position" in the first semiconductor region 10.

[0033] The second semiconductor region 20 contains Al x2 Ga 1-x2 N (0 < x2≤ 1, x1< x2). The composition ratio x2 is, for example, 0.05 or more and 1 or less. The second semiconductor region 20 is an AlGaN layer. The composition ratio of Al in the second semiconductor region 20 is higher than the composition ratio of Al in the first semiconductor region 10.

[0034] The second semiconductor region 20 includes a first semiconductor portion 21, a second semiconductor portion 22, and a third semiconductor portion 23. A direction from the fourth partial region 10d to the first semiconductor portion 21 is along the second direction (Z-axis direction). A direction from the fifth partial region 10e to the second semiconductor portion 22 is along the second direction (Z-axis direction). A direction from the sixth partial region 10f to the third semiconductor portion 23 is along the second direction (Z-axis direction). As shown in FIG. 1, the second semiconductor region 20 can also include a fourth semiconductor portion 24. The fourth semiconductor portion 24 is between the third partial region 10c and the third electrode 53 in the second direction. The mutual boundaries of the first to fourth semiconductor portions 21 to 24 can also be indefinite. Figure 1

[0035] ​The first conductive component 61 is electrically connected to one of the first electrodes, namely the first electrode 51 and the third electrode 53. Alternatively, the first conductive component 61 can be electrically connected to the aforementioned first electrode. In this example, the first conductive component 61 is electrically connected to the first electrode 51 via a connecting component 61S. The connecting component 61S may also be provided with... Figure 1 The cross-sections shown are at different locations. The connecting component 61S can also be installed independently of the semiconductor device 110.

[0036] The first conductive component 61 includes an end portion (first conductive end portion 61e) in a first direction (X-axis direction). The position of the first conductive end portion 61e in the first direction is between the position of the third electrode 53 in the first direction and the position of the second electrode 52 in the first direction. The first conductive end portion 61e is the end portion of the first conductive component 61 on the side of the second electrode 52.

[0037] The insulating component 40 includes a first nitride region 41 and a second nitride region 42. A second semiconductor portion 22 is located between a fifth portion region 10e and the first nitride region 41 in a second direction (Z-axis direction). A third semiconductor portion 23 is located between a sixth portion region 10f and the second nitride region 42 in the second direction.

[0038] The first nitride region 41 contains silicon and nitrogen. The second nitride region 42 contains silicon and nitrogen. These nitride regions are, for example, silicon nitride layers.

[0039] The ratio of silicon concentration to nitrogen concentration in the first nitride region 41 is set as a first ratio (Si / Ni). The ratio of silicon concentration to nitrogen concentration in the second nitride region 42 is set as a second ratio (Si / N). These concentration ratios correspond to the silicon composition ratio to the nitrogen composition ratio. In an embodiment, the first ratio is lower than the second ratio. The first nitride region 41 is, for example, a relatively N-rich silicon nitride layer. The second nitride region 42 is, for example, a relatively Si-rich silicon nitride layer. The Si and nitrogen composition ratios can be changed by altering the conditions during the formation of the nitride regions (e.g., the flow rate of the Si feed gas and the flow rate of the nitrogen feed gas).

[0040] The first nitride region 41 includes a first nitride end 41e. The first nitride end 41e is connected to the second semiconductor region 20 and is opposite to the second nitride region 42 in the first direction (X-axis direction). The first nitride end 41e is the end of the first nitride region 41 on the side of the second electrode 52. The first nitride end 41e can be connected to the second nitride region 42.

[0041] The position of the first nitride end portion 41e in the first direction (X-axis direction) is between the position of the first conductive end portion 61e in the first direction and the position of the second electrode 52 in the first direction. For example, the distance between the first nitride end portion 41e and the second electrode 52 is shorter than the distance between the first conductive end portion 61e and the second electrode 52.

[0042] For example, a carrier region 10C is formed in a region of the first semiconductor region 10 that opposes the second semiconductor region 20. The carrier region 10C is, for example, a two-dimensional electron gas. The distance between the first electrode 51 and the third electrode 53 is shorter than the distance between the second electrode 52 and the third electrode 53.

[0043] The current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 is, for example, a potential that is referenced to the potential of the first electrode 51. The first electrode 51 functions as, for example, a source electrode. The second electrode 52 functions as, for example, a drain electrode. The third electrode 53 functions as, for example, a gate electrode. The semiconductor device 110 is, for example, a HEMT (High Electron Mobility Transistor). The first conductive member 61 functions as, for example, a field plate. By providing the first conductive member 61, concentration of an electric field is suppressed.

[0044] As described above, in the semiconductor device 110 according to the embodiment, the nitride region having a different composition is provided. The end (the first nitride end portion 41e) of the first nitride region 41 is provided between the first conductive end portion 61e and the second electrode 52. Thereby, for example, current collapse can be suppressed. For example, a high withstand voltage can be maintained. According to the embodiment, a semiconductor device that can stabilize characteristics can be provided.

[0045] For example, there is a reference example in which, instead of the first nitride region 41 and the second nitride region 42 having mutually different compositions, a nitride region having a uniform composition is provided to the second semiconductor region 20. In the reference example, in a case where the entire nitride region is N-rich, current collapse becomes large. On the other hand, in the reference example, in a case where the entire nitride region is Si-rich, there is a tendency for the withstand voltage to become low.

[0046] It is known that current collapse tends to depend on the proximity of the second electrode 52 (e.g., the drain electrode). On the other hand, it is known that breakdown voltage tends to depend on the proximity of the third electrode 53 (e.g., the gate electrode) and the first conductive member 61 (e.g., the field plate). In this embodiment, the composition ratio of the nitride region is varied in the region between the third electrode 53 and the second electrode 52. This suppresses current collapse and enables the attainment of a high breakdown voltage. According to this embodiment, a semiconductor device capable of stabilizing characteristics can be provided.

[0047] For example, when a Si-rich nitride region is applied near the gate electrode, the breakdown voltage tends to decrease. The reason for this is believed to be as follows.

[0048] When the composition of the nitride region is higher than that of Si / N, and the nitride region becomes Si-rich, for example, the depletion voltage of the carrier region 10C (two-dimensional electron gas) increases. Therefore, when a Si-rich nitride region is applied near the gate electrode, the depletion layer is difficult to extend towards the drain electrode side as the depletion voltage increases. Consequently, when a Si-rich nitride region is applied near the gate electrode, the electric field tends to concentrate near the gate electrode. Therefore, the breakdown voltage tends to decrease.

[0049] When the depletion layer reaches the drain electrode, the electric field concentrates near the drain electrode, making current collapse more likely. By applying a Si-rich nitride region near the drain electrode, the voltage at which the depletion layer reaches the drain electrode can be increased. This suppresses current collapse.

[0050] For example, by making the Si / N ratio in the nitride region near the third electrode 53 lower (N-rich) and the Si / N ratio in the nitride region near the second electrode 52 higher (Si-rich), it is possible to maintain a high withstand voltage and suppress current collapse.

[0051] like Figure 1 As shown, the second electrode 52 includes a second electrode end 52e. The second electrode end 52e is in contact with the third semiconductor portion 23 (the second semiconductor region 20) and the second nitride region 42. The second electrode end 52e corresponds to the end on the third electrode 53 side of the portion where the second electrode 52 and the second semiconductor region 20 are in contact with each other.

[0052] The distance along the first direction between the position of the first conductive end 61e in the first direction (X-axis direction) and the position of the first nitride end 41e in the first direction is defined as the first distance L1. The distance along the first direction between the position of the first conductive end 61e in the first direction and the position of the second electrode end 52e in the first direction is defined as the second distance L2. In this embodiment, the first distance L1 is greater than 0. The first distance L1 is less than the second distance L2.

[0053] Figure 2 It is a chart illustrating the characteristics of a semiconductor device.

[0054] Figure 2 The characteristics are illustrated when the first nitride region 41 and the second nitride region 42 are disposed on the second semiconductor region 20. Figure 2 The horizontal axis is the ratio RL of the first distance L1 to the second distance L2. When the ratio RL is 0, the first nitride end 41e and the first conductive end 61e overlap in the Z-axis direction. When the ratio RL is 1, the first nitride end 41e and the second electrode end 52e overlap in the Z-axis direction. Figure 2 The vertical axis represents the rate of increase in resistance CC1 when drain voltage stress is applied. The magnitude of the resistance increase CC1 corresponds to the magnitude of current collapse. In this example, the Si / N ratio in the first nitride region 41 is 0.69, and the Si / N ratio in the second nitride region 42 is 0.80. Figure 2 In the diagram, three black circles are shown for a ratio RL. These three black circles correspond to three data points obtained with respect to the ratio RL. The white circles correspond to the median value of these three data points.

[0055] like Figure 2 As shown, under these conditions, insulation failure occurs when the resistance ratio RL is less than 0.15 (lower than the dashed line in the figure). When the resistance ratio RL is 0.15 or higher and the resistance increase rate CC1 is low, a small current collapse can be obtained. In the embodiment, the resistance ratio RL is preferably 0.43 or higher. This facilitates obtaining a high withstand voltage. The resistance ratio RL is more preferably 0.7 or higher. This allows for a stable high withstand voltage and effectively suppresses current collapse. The resistance ratio RL is preferably less than 1. The resistance ratio RL is, for example, preferably 0.96 or lower.

[0056] In an embodiment, the first ratio (Si / N) in the first nitride region 41 is preferably less than 0.75, for example. The first ratio may also be less than 0.72.

[0057] In an embodiment, the second ratio (Si / N) in the second nitride region 42 is preferably 0.75 or higher. The second ratio may also be 0.75 or higher and 0.96 or lower. The second ratio may also be 0.78 or higher and 0.96 or lower. The second ratio may also be 0.78 or higher and 0.93 or lower. The second ratio may also be 0.78 or higher and 0.85 or lower.

[0058] like Figure 1As shown, the semiconductor device 110 may also include a substrate 10s and a nitride layer 11B. The nitride layer 11B is disposed on the substrate 10s. A first semiconductor region 10 is disposed on the nitride layer 11B. A second semiconductor region 20 is disposed on the first semiconductor region 10. The substrate 10s is, for example, a substrate. The substrate 10s may also be, for example, a silicon substrate or a SiC substrate. The nitride layer 11B may also contain, for example, a nitride semiconductor. The nitride layer 11B may contain, for example, Al, Ga, and N. The nitride layer 11B may be, for example, a buffer layer.

[0059] like Figure 1 As shown, the thickness of the first nitride region 41 along the second direction (Z-axis direction) is defined as thickness t1. Thickness t1 is, for example, 0.5 nm or more and 300 nm or less. The thickness of the second nitride region 42 along the second direction is defined as thickness t2. Thickness t2 is preferably, for example, 0.5 nm or more and 300 nm or less. With such a thickness, for example, it is easy to obtain the desired threshold voltage. With such a thickness, for example, it is easy to obtain high gate reliability. For example, thickness t1 can also be 10 nm or more and 100 nm or less.

[0060] like Figure 1 As shown, a portion 40p of the insulating member 40 may also be disposed between the third electrode 53 and the first conductive member 61. The portion 40p of the insulating member 40 may, for example, contain silicon and a first element. The first element includes at least one of oxygen and nitrogen. In one example, the portion 40p of the insulating member 40 contains silicon oxide. In this case, the portion 40p of the insulating member 40 may not contain nitrogen. Alternatively, the nitrogen concentration in the first nitride region 41 and the second nitride region 42 may be higher than the nitrogen concentration in the portion 40p of the insulating member 40. The portion 40p of the insulating member 40 electrically insulates the third electrode 53 from the first conductive member 61. The portion 40p of the insulating member 40 may also be silicon nitride.

[0061] like Figure 1 As shown, at least a portion of the second nitride region 42 is connected to the third semiconductor portion 23. At least a portion of the first nitride region 41 is connected to the second semiconductor portion 22. In this example, the direction from the first nitride region 41 to the second nitride region 42 is along a first direction (X-axis direction).

[0062] The following describes several examples of semiconductor devices involved in the implementation.

[0063] Figure 3 This is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0064] like Figure 3As shown, in the semiconductor device 110a according to the embodiment, at least a portion of the second nitride region 42 is located between the third semiconductor portion 23 and a portion of the first nitride region 41 in the second direction (Z-axis direction). For example, a portion of the first nitride region 41 is disposed on top of the second nitride region 42. Other structures in the semiconductor device 110a may be the same as those in the semiconductor device 110.

[0065] Figure 4 This is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0066] like Figure 4 As shown, in the semiconductor device 110b according to the embodiment, at least a portion of the first nitride region 41 is located between the second semiconductor portion 22 and a portion of the second nitride region 42 in the second direction (Z-axis direction). For example, a portion of the second nitride region 42 is disposed on top of the first nitride region 41. Other structures in the semiconductor device 110b may be the same as those in the semiconductor device 110.

[0067] Figure 5 This is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0068] like Figure 5 As shown, in the semiconductor device 110c according to the embodiment, the third electrode 53 is located between a portion of the first nitride region 41 and a portion of the second nitride region 42 in the second direction (Z-axis direction). Other structures in the semiconductor device 110c may be the same as those in the semiconductor device 110b.

[0069] In semiconductor devices 110a to 110c, for example, current collapse can also be suppressed. For example, a high withstand voltage can be maintained. A semiconductor device capable of stabilizing characteristics can be provided.

[0070] In semiconductor devices 110 and 110a-110c, a portion of the first nitride region 41 is located between the second semiconductor region 20 and the third electrode 53 in the second direction (Z-axis direction). A portion of the first nitride region 41 is located between the third partial region 10c and the third electrode 53.

[0071] Figure 6 This is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0072] like Figure 6As shown, in the semiconductor device 111 according to the embodiment, the first conductive member 61 is electrically connected to the third electrode 53 via the connecting member 61G. Other structures in the semiconductor device 111 may be the same as those in the semiconductor device 110.

[0073] Figure 7 This is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0074] like Figure 7 As shown, in the semiconductor device 112 according to the embodiment, a first conductive member 61 and a second conductive member 62 are provided. The other structures in the semiconductor device 112 may be the same as those in the semiconductor device 110.

[0075] As explained above, the first conductive component 61 is electrically connected to one of the first electrodes, the first electrode 51 and the third electrode 53. Alternatively, the first conductive component 61 can be electrically connected to the first electrode mentioned above. In this example, the first conductive component 61 is electrically connected to the first electrode 51 via a connecting component 61S.

[0076] The second conductive component 62 is electrically connected to a second electrode of the first electrode 51 and the third electrode 53. Alternatively, the second conductive component 62 can be electrically connected to the second electrode. The second electrode can also be the other of the first electrode 51 and the third electrode 53. In this example, the second conductive component 62 is electrically connected to the third electrode 53 via a connecting component 62G.

[0077] The second conductive component 62 includes a second conductive end 62e in the first direction (X-axis direction). The position of the second conductive end 62e in the first direction is between the position of the third electrode 53 in the first direction and the position of the first conductive end 61e in the first direction. The second conductive component 62 functions as a second field plate. By providing the second conductive component 62, the concentration of the electric field is further suppressed.

[0078] The position of the second conductive component 62 in the second direction (Z-axis direction) is between the position of the third electrode 53 in the second direction and the position of the first conductive component 61 in the second direction.

[0079] Figure 8 This is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0080] like Figure 8 As shown, in the semiconductor device 113 according to the embodiment, a first conductive member 61, a second conductive member 62, and a third conductive member 63 are provided. The structures other than these in the semiconductor device 113 may be the same as those in the semiconductor devices 110 to 112.

[0081] The third conductive member 63 is electrically connected to the second electrode 52. Alternatively, the third conductive member 63 can be electrically connected to the second electrode 52. In this example, the third conductive member 63 is electrically connected to the second electrode 52 through the connecting member 63D.

[0082] The third conductive member 63 includes a third conductive end portion 63e in the first direction (the first direction). The third conductive end portion 63e is, for example, an end portion of the third conductive member 63 on the side of the third electrode 53. The position of the first nitride end portion 41e in the first direction (the first direction) is between the position of the first conductive end portion 61e in the first direction and the position of the third conductive end portion 63e in the first direction.

[0083] In the semiconductor devices 111 to 113, for example, current collapse can be suppressed. For example, a high withstand voltage can be maintained. A semiconductor device capable of stabilizing characteristics can be provided.

[0084] (Second Embodiment)

[0085] Figure 9 is a schematic cross-sectional view illustrating a semiconductor device according to the second embodiment.

[0086] As Figure 9 indicated, the semiconductor device 120 according to the embodiment also includes the first to third electrodes 51 to 53, the first semiconductor region 10, the second semiconductor region 20, the first conductive member 61, and the insulating member 40. The insulating member 40 includes the first insulating film 45. In the semiconductor device 120, the structures described with respect to the first embodiment can be applied to the first to third electrodes 51 to 53, the first semiconductor region 10, the second semiconductor region 20, and the first conductive member 61.

[0087] The first insulating film 45 includes a first insulating region 45a. The first insulating region 45a is provided between the third partial region 10c and the third electrode 53. The first insulating region 45a functions as, for example, a gate insulating film.

[0088] The first insulating film 45 contains silicon and oxygen. The first insulating film 45 does not contain nitrogen. Alternatively, the concentration of nitrogen in the first insulating film 45 is lower than the concentration of nitrogen in the second nitride region 42. The first insulating film 45 is, for example, a silicon oxide film (for example, a silicon dioxide film). By providing the first insulating film 45, the variation in threshold voltage can be further suppressed.

[0089] In the semiconductor device 120, the first nitride region 41 and the second nitride region 42 are also provided. The first ratio (Si / N) of the concentration of silicon to the concentration of nitrogen in the first nitride region 41 is lower than the second ratio (Si / N) of the concentration of silicon to the concentration of nitrogen in the second nitride region 42. The position of the first nitride end portion 41e in the first direction (X-axis direction) is between the position of the first conductive end portion 61e in the first direction and the position of the second electrode 52 in the first direction. For example, current collapse can be suppressed. For example, a high withstand voltage can be maintained. A semiconductor device capable of stabilizing characteristics can be provided.

[0090] As shown in FIG. 1, in this example, at least a portion of the third electrode 53 is between the first semiconductor portion 21 and the second semiconductor portion 22 in the first direction (X-axis direction). The third electrode 53 is a recessed gate electrode. With such a structure, for example, a high threshold value is easily obtained. For example, a normally-off characteristic can be obtained. Figure 9 As shown in FIG. 1, the first insulating film 45 can also include a second insulating region 45b and a third insulating region 45c. The second insulating region 45b is between the first semiconductor portion 21 and the third electrode 53 in the first direction (X-axis direction). The third insulating region 45c is between the third electrode 53 and the second semiconductor portion 22 in the first direction.

[0091] Figure 9 As shown in FIG. 1, the first insulating film 45 can also include a fourth insulating region 45d and a fifth insulating region 45e. The first semiconductor portion 21 is between the fourth partial region 10d and the fourth insulating region 45d in the second direction (Z-axis direction). The second semiconductor portion 22 is between the fifth partial region 10e and the fifth insulating region 45e in the second direction. For example, the first nitride region 41 is between the second semiconductor portion 22 and a portion of the fifth insulating region 45e.

[0092] As shown in FIG. 1, the first insulating film 45 can also include a fourth insulating region 45d and a fifth insulating region 45e. The first semiconductor portion 21 is between the fourth partial region 10d and the fourth insulating region 45d in the second direction (Z-axis direction). The second semiconductor portion 22 is between the fifth partial region 10e and the fifth insulating region 45e in the second direction. For example, the first nitride region 41 is between the second semiconductor portion 22 and a portion of the fifth insulating region 45e. Figure 9 (Third Embodiment)

[0093]

[0094] Figure 10 is a schematic cross-sectional view illustrating a semiconductor device according to the third embodiment.

[0095] As shown in FIG. 1, the first insulating film 45 can also include a fourth insulating region 45d and a fifth insulating region 45e. The first semiconductor portion 21 is between the fourth partial region 10d and the fourth insulating region 45d in the second direction (Z-axis direction). The second semiconductor portion 22 is between the fifth partial region 10e and the fifth insulating region 45e in the second direction. For example, the first nitride region 41 is between the second semiconductor portion 22 and a portion of the fifth insulating region 45e. Figure 10 ​​As shown, the semiconductor device 130 according to the embodiment also includes first to third electrodes 51 to 53, a first semiconductor region 10, a second semiconductor region 20, a first conductive member 61, and an insulating member 40. In the semiconductor device 130, the direction from a portion 53a of the third electrode 53 towards the first nitride region 41 intersects with a second direction (e.g., the Z-axis direction). The structures described with respect to the first embodiment can be applied to other structures in the semiconductor device 130.

[0096] For example, in the first direction (X-axis direction), a portion 53a of the third electrode 53 is located between multiple portions of the first nitride region 41. For example, a portion 53a of the third electrode 53 may be connected to the second semiconductor region 20 (the fourth semiconductor portion 24). The semiconductor device 130 is, for example, a high-frequency transistor.

[0097] Figure 11 This is a schematic cross-sectional view illustrating the semiconductor device according to the third embodiment.

[0098] like Figure 11 As shown, the semiconductor device 131 according to the embodiment includes first to third electrodes 51 to 53, a first semiconductor region 10, a second semiconductor region 20, a third semiconductor region 30, a first conductive member 61, and an insulating member 40. The structures described in the first embodiment can be applied to other structures in the semiconductor device 131.

[0099] The third semiconductor region 30 is disposed between the fourth semiconductor portion 24 and the third electrode 53. The third semiconductor region 30 contains Al. x3 Ga 1-x3 N (0 ≤ x3 < 1) and a second element. The second element comprises at least one selected from the group consisting of Mg and Zn. The third semiconductor region 30 is, for example, a p-shaped GaN layer. The third semiconductor region 30 is, for example, a p-shaped AlGaN layer. In the case that the third semiconductor region 30 is a p-shaped AlGaN layer, the composition ratio x3 is, for example, greater than 0 (e.g., greater than 0.05) and less than 0.5. The semiconductor device 131 is, for example, a JFET type transistor.

[0100] In the third embodiment, a semiconductor device capable of stabilizing characteristics is also provided. The structure of the semiconductor device (semiconductor device 130 or 131) according to the third embodiment can also be applied to the second embodiment.

[0101] In the embodiment, at least any one of the first electrode 51 and the second electrode 52 includes at least one selected from the group consisting of Ti, Al, Cu, and Au, for example. The third electrode 53 (e.g., a gate electrode) includes at least one selected from the group consisting of TiN, WN, Ni, TaN, Ni, Au, Al, Ru, W, and TaSiN, for example. At least any one of the first to third conductive members 61 to 63 includes at least one selected from the group consisting of Al, Cu, and Ti.

[0102] In the embodiment, the composition ratio (e.g., concentration) of Si and nitrogen can be obtained by RBS (Rutherford Backscattering Spectrometry), for example.

[0103] In the first to third embodiments, the second electrode end portion 52e of the second electrode 52 is in contact with the third semiconductor portion 23 (the second semiconductor region 20) and the insulating member 40 (e.g., the second nitride region 42). The second electrode end portion 52e corresponds to an end portion on the third electrode 53 side of a portion where the second electrode 52 and the second semiconductor region 20 are in contact with each other.

[0104] (Fourth Embodiment)

[0105] Figure 12 is a schematic cross-sectional view illustrating a semiconductor device according to the fourth embodiment.

[0106] As Figure 12 indicated, the semiconductor device 140 according to the embodiment also includes the first to third electrodes 51 to 53, the first semiconductor region 10, the second semiconductor region 20, the first conductive member 61, and the insulating member 40. In the semiconductor device 140, the insulating member 40 includes a third nitride region 43. Structures other than the above-described structures in the semiconductor device 140 can be applied to the structures described with respect to the first embodiment.

[0107] At least a portion of the second nitride region 42 is between at least a portion of the first nitride region 41 and at least a portion of the third nitride region 43 in the first direction (X-axis direction). In this example, the second nitride region 42 is between the first nitride region 41 and the third nitride region 43 in the first direction (X-axis direction).

[0108] The third nitride region 43 includes silicon and nitrogen. The third ratio (Si / N) of the concentration of silicon to the concentration of nitrogen in the third nitride region 43 is higher than the second ratio. The third nitride region 43 is a region that is more silicon-rich than the second nitride region 42.

[0109] Such a third nitride region 43 with a high silicon concentration is provided in the vicinity of the second electrode 52 (e.g., a drain electrode). Thus, in the vicinity of the second electrode 52, depletion is further suppressed. For example, current collapse is more effectively suppressed.

[0110] The third ratio can also be higher than 0.96. The third ratio can take any value higher than the second ratio.

[0111] The thickness of the second nitride region 42 along the second direction (Z-axis direction) is set to thickness t3. In one example, the thickness t3 is, for example, 0.5 nm or more and 300 nm or less. For example, it is easy to obtain a desired threshold voltage. For example, it is easy to obtain high gate reliability. The thickness t3 can also be substantially the same as the thickness t1 and the thickness t2.

[0112] At least a portion of the second nitride region 42 can also overlap with a portion of the third nitride region 43. For example, a portion of the second nitride region 42 can be between the second semiconductor region 20 and a portion of the third nitride region 43 in the Z-axis direction. For example, a portion of the third nitride region 43 can be between the second semiconductor region 20 and a portion of the second nitride region 42 in the Z-axis direction.

[0113] In the example of the semiconductor device 140, the second electrode end portion 52e of the second electrode 52 is in contact with the third semiconductor portion 23 (the second semiconductor region 20) and the insulating member 40 (e.g., the third nitride region 43).

[0114] Figure 13 is a schematic cross-sectional view illustrating a semiconductor device according to a fourth embodiment.

[0115] As Figure 13 indicated, the semiconductor device 141 according to the embodiment includes a third conductive member 63. The structures other than this in the semiconductor device 141 can be the same as those of the semiconductor device 140.

[0116] The third conductive member 63 is electrically connected to the second electrode 52. Alternatively, the third conductive member 63 can be electrically connected to the second electrode 52. The position of the second electrode 52 in the second direction (Z-axis direction) is between the position of the first semiconductor region 10 in the second direction and the position of the third conductive member 63 in the second direction. At least a portion of the third nitride region 43 overlaps with the third conductive member 63 in the second direction. For example, current collapse is more effectively suppressed.

[0117] The embodiment can include the following technical solutions.

[0118] (Technical Solution 1)

[0119] A semiconductor device includes:

[0120] a first electrode;

[0121] a second electrode, a direction from the first electrode to the second electrode being along a first direction;

[0122] a third electrode, a position of the third electrode in the first direction being between a position of the first electrode in the first direction and a position of the second electrode in the first direction;

[0123] a first semiconductor region containing Al x1 Ga 1-x1 N (0 ≤ x1 < 1), the first semiconductor region including a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, and a sixth partial region, a direction from the first partial region to the first electrode, a direction from the second partial region to the second electrode, and a direction from the third partial region to the third electrode being along a second direction intersecting the first direction, the fourth partial region being between the first partial region and the third partial region in the first direction, the fifth partial region being between the third partial region and the second partial region in the first direction, and the sixth partial region being between the fifth partial region and the second partial region in the first direction;

[0124] a second semiconductor region containing Al x2 Ga 1-x2 N (0 < x2 ≤ 1, x1 < x2), the second semiconductor region including a first semiconductor partial region, a second semiconductor partial region, and a third semiconductor partial region, a direction from the fourth partial region to the first semiconductor partial region being along the second direction;

[0125] a first conductive member electrically connected to or capable of being electrically connected to a first one of the first electrode and the third electrode, the first conductive member including a first conductive end portion in the first direction, a position of the first conductive end portion in the first direction being between the position of the third electrode in the first direction and the position of the second electrode in the first direction; and

[0126] An insulating member includes a first nitride region and a second nitride region, a second semiconductor portion is between the fifth partial region and the first nitride region in the second direction, a third semiconductor portion is between the sixth partial region and the second nitride region in the second direction, the first nitride region contains silicon and nitrogen, the second nitride region contains silicon and nitrogen, a first ratio of a concentration of silicon to a concentration of nitrogen in the first nitride region is lower than a second ratio of a concentration of silicon to a concentration of nitrogen in the second nitride region, the first nitride region includes a first nitride end portion, the first nitride end portion is in contact with the second semiconductor region, is opposite to the second nitride region in the first direction, and a position of the first nitride end portion in the first direction is between the position of the first conductive end portion in the first direction and the position of the second electrode in the first direction.

[0127] (technical solution 2)

[0128] According to technical solution 1, in the semiconductor device,

[0129] The first ratio is lower than 0.75.

[0130] (technical solution 3)

[0131] According to technical solution 2, in the semiconductor device,

[0132] The second ratio is 0.75 or more and 0.96 or less.

[0133] (technical solution 4)

[0134] According to technical solution 3, in the semiconductor device,

[0135] The second ratio is 0.78 or more.

[0136] (technical solution 5)

[0137] According to any one of technical solutions 1 to 4, in the semiconductor device,

[0138] At least a part of the second nitride region is in contact with the third semiconductor portion.

[0139] (technical solution 6)

[0140] According to any one of technical solutions 1 to 5, in the semiconductor device,

[0141] At least a part of the second nitride region is between the third semiconductor portion and a part of the first nitride region in the second direction.

[0142] (claim 7)

[0143] The semiconductor device according to any one of claims 1 to 5, wherein

[0144] At least a portion of the first nitride region is between the second semiconductor portion and a portion of the second nitride region in the second direction.

[0145] (claim 8)

[0146] The semiconductor device according to any one of claims 1 to 7, wherein

[0147] A portion of the first nitride region is between the second semiconductor region and the third electrode in the second direction.

[0148] (claim 9)

[0149] The semiconductor device according to any one of claims 1 to 7, wherein

[0150] The portion of the first nitride region is between the third partial region and the third electrode.

[0151] (claim 10)

[0152] The semiconductor device according to claim 9, wherein

[0153] The third electrode is between the portion of the first nitride region and a portion of the second nitride region in the second direction.

[0154] (claim 11)

[0155] The semiconductor device according to any one of claims 1 to 8, wherein

[0156] The insulating member includes a first insulating film including a first insulating region,

[0157] The first insulating region is provided between the third partial region and the third electrode,

[0158] The first insulating film includes silicon and oxygen,

[0159] The first insulating film does not include nitrogen or a concentration of nitrogen in the first insulating film is lower than a concentration of nitrogen in the second nitride region.

[0160] (claim 12)

[0161] The semiconductor device according to claim 10, wherein

[0162] At least a part of the third electrode is between the first semiconductor portion and the second semiconductor portion in the first direction.

[0163] (Embodiment 13)

[0164] The semiconductor device according to Embodiment 12, wherein

[0165] The first insulating film further includes a second insulating region and a third insulating region,

[0166] The second insulating region is between the first semiconductor portion and the third electrode in the first direction,

[0167] The third insulating region is between the third electrode and the second semiconductor portion in the first direction.

[0168] (Embodiment 14)

[0169] The semiconductor device according to Embodiment 13, wherein

[0170] The first insulating film further includes a fourth insulating region and a fifth insulating region,

[0171] The first semiconductor portion is between the fourth partial region and the fourth insulating region in the second direction,

[0172] The second semiconductor portion is between the fifth partial region and the fifth insulating region in the second direction.

[0173] (Embodiment 15)

[0174] The semiconductor device according to Embodiment 14, wherein

[0175] The first nitride region is between the second semiconductor portion and a part of the fifth insulating region.

[0176] (Embodiment 16)

[0177] The semiconductor device according to any one of Embodiments 1 to 15, wherein

[0178] Further comprising a second conductive member,

[0179] The second conductive member is electrically connected to or capable of being electrically connected to a second one of the first electrode and the third electrode,

[0180] The second conductive member includes a second conductive end portion in the first direction,

[0181] The position of the second conductive end portion in the first direction is between the position of the third electrode in the first direction and the position of the first conductive end portion in the first direction.

[0182] (Technical Solution 17)

[0183] The semiconductor device according to Technical Solution 16,

[0184] The position of the second conductive member in the second direction is between the position of the third electrode in the second direction and the position of the first conductive member in the second direction.

[0185] (Technical Solution 18)

[0186] The semiconductor device according to any one of Technical Solutions 1 to 17,

[0187] Further comprising a third conductive member,

[0188] The third conductive member is electrically connected to or capable of being electrically connected to the second electrode,

[0189] The third conductive member includes a third conductive end portion in the first direction,

[0190] The position of the first nitride end portion in the first direction is between the position of the first conductive end portion in the first direction and the position of the third conductive end portion in the first direction.

[0191] (Technical Solution 19)

[0192] The semiconductor device according to any one of Technical Solutions 1 to 18,

[0193] The second electrode includes a second electrode end portion,

[0194] The second electrode end portion is in contact with the third semiconductor portion and the insulating member,

[0195] A first distance in the first direction between the position of the first conductive end portion in the first direction and the position of the first nitride end portion in the first direction is 0.43 times or more of a second distance in the first direction between the position of the first conductive end portion in the first direction and the position of the second electrode end portion in the first direction.

[0196] (Technical Solution 20)

[0197] The semiconductor device according to any one of Technical Solutions 1 to 19,

[0198] The thickness of the first nitride region in the second direction is 0.5 nm or more and 300 nm or less,

[0199] The thickness of the second nitride region in the second direction is 0.5 nm or more and 300 nm or less.

[0200] (Technical Solution 21)

[0201] The semiconductor device according to any one of Technical Solutions 1 to 4, wherein

[0202] The insulating member further has a third nitride region,

[0203] At least a part of the second nitride region is between at least a part of the first nitride region and at least a part of the third nitride region in the first direction,

[0204] The third nitride region contains silicon and nitrogen,

[0205] A third ratio of a concentration of silicon to a concentration of nitrogen in the third nitride region is higher than the second ratio.

[0206] (Technical Solution 22)

[0207] The semiconductor device according to Technical Solution 21, wherein

[0208] The third ratio is higher than 0.96.

[0209] (Technical Solution 23)

[0210] The semiconductor device according to Technical Solution 21 or 22, wherein

[0211] Further has a third conductive member,

[0212] The third conductive member is electrically connected to or capable of being electrically connected to the second electrode,

[0213] A position of the second electrode in the second direction is between a position of the first semiconductor region in the second direction and a position of the third conductive member in the second direction,

[0214] At least a part of the third nitride region overlaps the third conductive member in the second direction.

[0215] According to the embodiments, it is possible to provide a semiconductor device capable of stabilizing characteristics.

[0216] In the present specification, the "state of electrical connection" includes a state in which a plurality of conductive bodies are physically connected and an electric current flows between the plurality of conductive bodies. The "state of electrical connection" includes a state in which another conductive body is interposed between a plurality of conductive bodies and an electric current flows between the plurality of conductive bodies.

[0217] In the present specification, "vertical" and "parallel" include not only strict vertical and strict parallel, but also, for example, deviations in a manufacturing process and the like, and substantially vertical and substantially parallel.

[0218] The above describes embodiments of the present application with reference to specific examples. However, the present application is not limited to these specific examples. For example, as to the specific structure of each element such as an electrode, a semiconductor region, a conductive member, an insulating member, and a base included in the semiconductor device, as long as the present application can be implemented in the same manner and the same effects can be obtained by appropriately selecting from a known range by those skilled in the art, it is included in the scope of the present application.

[0219] Further, examples obtained by combining any two or more elements of each of the specific examples within a technically possible range are included in the scope of the present application as long as the gist of the present application is included.

[0220] Further, all semiconductor devices that can be implemented by those skilled in the art by appropriately modifying the design based on the semiconductor device described above as an embodiment of the present application are included in the scope of the present application as long as the gist of the present application is included.

[0221] Further, it should be understood that various modifications and changes can be made by those skilled in the art within the scope of the idea of the present application, and such modifications and changes are included in the scope of the present application.

[0222] Although several embodiments of the present application have been described, these embodiments are presented by way of example and are not intended to limit the scope of the application. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the scope of the application. These embodiments, variations thereof, are included in the scope, gist of the application, and are included in the scope of the application and equivalents thereof recited in the claims.

Claims

1. A semiconductor device comprising: a first electrode; a second electrode along a first direction from the first electrode toward the second electrode; a third electrode, a position of the third electrode in the first direction being between a position of the first electrode in the first direction and a position of the second electrode in the first direction; a first conductive member electrically connectable with one of the first electrode and the third electrode, the first conductive member including a first conductive end portion in the first direction, a position of the first conductive end portion in the first direction being between the position of the third electrode in the first direction and the position of the second electrode in the first direction; and an insulating member including a first nitride region and a second nitride region, the second semiconductor portion being between the fifth partial region and the first nitride region in the second direction, the third semiconductor portion being between the sixth partial region and the second nitride region in the second direction, the first nitride region containing silicon and nitrogen, the second nitride region containing silicon and nitrogen, a first ratio of a concentration of silicon to a concentration of nitrogen in the first nitride region being lower than a second ratio of a concentration of silicon to a concentration of nitrogen in the second nitride region, the first nitride region including a first nitride end portion, the first nitride end portion being in contact with the second semiconductor region, being opposite to the second nitride region in the first direction, a position of the first nitride end portion in the first direction being between the position of the first conductive end portion in the first direction and the position of the second electrode in the first direction, at least a portion of the first nitride region being between the second semiconductor portion and a portion of the second nitride region in the second direction, the second electrode including a second electrode end portion, the second electrode end portion being in contact with the third semiconductor portion and the insulating member, a first distance along the first direction between the position of the first conductive end portion in the first direction and the position of the first nitride end portion in the first direction with respect to a second distance along the first direction between the position of the first conductive end portion in the first direction and the position of the second electrode end portion in the first direction being 0.15 or more and 0.96 or less, the first direction being a parallel substrate direction, and the second direction being a perpendicular substrate direction.

2. The semiconductor device according to claim 1, wherein the first conductive member is electrically connected with one of the first electrode and the third electrode.

3. The semiconductor device according to claim 1, wherein the first ratio is lower than 0.

75.

4. The semiconductor device according to claim 3, wherein the second ratio is 0.75 or more and 0.96 or less. a first semiconductor region containing Al x1 Ga 1-x1 N, the first semiconductor region including a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, and a sixth partial region, the fourth partial region being between the first partial region and the third partial region in the first direction, the fifth partial region being between the third partial region and the second partial region in the first direction, the sixth partial region being between the fifth partial region and the second partial region in the first direction, wherein 0 ≤ x1 < 1; a second semiconductor region including Al x2 Ga 1-x2 N, the second semiconductor region including a first semiconductor portion, a second semiconductor portion, and a third semiconductor portion, in the second direction from the fourth portion region to the first semiconductor portion, wherein 0 < x2≤ 1, x1< x2; 5. The semiconductor device according to claim 1, wherein ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ A portion of the first nitride region is between the second semiconductor region and the third electrode in the second direction.

6. The semiconductor device according to claim 1, wherein A portion of the first nitride region is between the third partial region and the third electrode.

7. The semiconductor device according to claim 1, wherein The insulating member includes a first insulating film including a first insulating region, The first insulating region is provided between the third partial region and the third electrode, The first insulating film contains silicon and oxygen, The first insulating film does not contain nitrogen or the concentration of nitrogen in the first insulating film is lower than the concentration of nitrogen in the second nitride region.

8. The semiconductor device according to claim 1, wherein Further comprising a second conductive member, The second conductive member is electrically connectable to the other of the first electrode and the third electrode, The second conductive member includes a second conductive end portion in the first direction, The position of the second conductive end portion in the first direction is between the position of the third electrode in the first direction and the position of the first conductive end portion in the first direction.

9. The semiconductor device according to claim 8, wherein The second conductive member is electrically connected to the other of the first electrode and the third electrode.

10. The semiconductor device according to claim 1, wherein Further comprising a third conductive member, The third conductive member is electrically connectable to the second electrode, The third conductive member includes a third conductive end portion in the first direction, The position of the first nitride end portion in the first direction is between the position of the first conductive end portion in the first direction and the position of the third conductive end portion in the first direction.

11. The semiconductor device according to claim 10, wherein The third conductive member is electrically connected to the second electrode.

12. The semiconductor device according to claim 1, wherein The insulating member further comprises a third nitride region, At least a portion of the second nitride region is between at least a portion of the first nitride region and at least a portion of the third nitride region in the first direction, The third nitride region contains silicon and nitrogen, The third ratio of the concentration of silicon to the concentration of nitrogen in the third nitride region is higher than the second ratio.

13. The semiconductor device according to claim 1, wherein The ratio of the first distance to the second distance is 0.43 or more.

14. The semiconductor device according to claim 1, wherein The ratio of the first distance to the second distance is 0.7 or more.

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