Photonic memristor and its preparation method

Abstract

The present invention discloses a photonic memristor and a preparation method thereof, belonging to the field of semiconductors. The photonic memristor of the present invention is composed of a substrate and a Fabry-Perot resonator. The Fabry-Perot resonator is formed by combining a first reflective film, a graphene oxide nonlinear dielectric layer, and a second reflective film, which can realize the optical spatial parallel propagation and interconnection in optical switching, so as to better perform high-density information storage, improve the processing speed, have low energy consumption, and compared with the existing memristors, have a smaller size, are convenient for integration and manufacturing, and can be mass-produced.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and particularly to a photonic memristor and a preparation method thereof. Background Art

[0002] A memristor, fully called a memory resistor (Memristor), is a circuit device representing the relationship between magnetic flux and charge. Due to its memory function and non-linear characteristics, the memristor has become one of the strong candidates for new electronic synaptic devices in the field of artificial intelligence, showing great potential in aspects such as high reliability, fast operation speed, lower power consumption, and lower market cost. Existing memristors have a typical sandwich structure, with electrodes on the top and bottom and an active layer in the middle. Traditional memristive devices mostly use metals as electrode materials. However, limited by Moore's Law of electrons, the integration and energy consumption of electronic memristors have reached their limits, and their actual application scope is greatly restricted. Summary of the Invention

[0003] Aiming at the above-mentioned defect problems of existing memristors, the present invention provides a photonic memristor and a preparation method thereof, aiming to have low energy consumption and high integration.

[0004] The present invention provides a photonic memristor, comprising:

[0005] A substrate;

[0006] A Fabry - Perot resonator formed on the upper surface of the substrate, and the Fabry - Perot resonator comprises:

[0007] A first reflective film formed on the upper surface of the substrate;

[0008] A second reflective film located above the first reflective film;

[0009] A graphene oxide nonlinear dielectric layer located between the first reflective film and the second reflective film.

[0010] Optionally, the substrate is made of silicon material or flexible organic material.

[0011] Optionally, the first reflective film comprises:

[0012] A first reflective layer formed on the upper surface of the substrate;

[0013] A first isolation layer formed on the upper surface of the reflective layer.

[0014] Optionally, the first reflective layer is a metal reflective layer.

[0015] Optionally, the first isolation layer is an inorganic dielectric layer.

[0016] Optionally, the second reflective film comprises:

[0017] A second isolation layer is formed on the upper surface of the graphene oxide nonlinear dielectric layer;

[0018] A second reflective layer is formed on the upper surface of the second isolation layer.

[0019] Optionally, the thicknesses of both the first reflective layer and the second reflective layer are between 25 nm and 110 nm, and the thickness of the first reflective layer is different from the thickness of the second reflective layer.

[0020] Optionally, the thicknesses of both the first isolation layer and the second isolation layer are between 20 nm and 140 nm, and the thickness of the first isolation layer is different from the thickness of the second isolation layer.

[0021] Optionally, the second reflective layer is a metal reflective layer.

[0022] Optionally, the second isolation layer is an inorganic dielectric layer.

[0023] Optionally, the thickness of the graphene oxide nonlinear dielectric layer is between 1 nm and 10 nm.

[0024] The present invention also provides a method for preparing a photonic memristor, including:

[0025] Forming a Fabry - Perot resonator on a substrate, where the Fabry - Perot resonator includes a first reflective film, a second reflective film, and a graphene oxide nonlinear dielectric layer located between the first reflective film and the second reflective film.

[0026] Optionally, forming a Fabry - Perot resonator on a substrate includes:

[0027] Forming a first reflective layer on the upper surface of the substrate by magnetron sputtering;

[0028] Forming a first isolation layer on the upper surface of the first reflective layer by magnetron sputtering and deposition method, where the first reflective layer and the first isolation layer constitute the first reflective film;

[0029] Preparing the graphene oxide nonlinear dielectric layer on the upper surface of the first isolation layer by using a method of multiple stacking or dropping or spraying with a reagent of a preset concentration;

[0030] Forming a second isolation layer on the upper surface of the graphene oxide nonlinear dielectric layer by magnetron sputtering and deposition method;

[0031] Forming a second reflective layer on the upper surface of the second isolation layer by magnetron sputtering, where the second isolation layer and the second reflective layer constitute the second reflective film.

[0032] Optionally, the deposition method uses one of a mask method, a coating method, or a chemical vapor deposition method.

[0033] Optionally, the preset concentration reagent is a mixed solution of a graphene oxide solution at 1 mg / ml - 5 mg / ml and a diethylene glycol diacrylate phthalate solution at 2% - 10%.

[0034] The present invention also provides a chip including the above-mentioned photonic memristor.

[0035] Beneficial effects of the above technical solution:

[0036] In this technical solution, the photonic memristor of the present invention is composed of a substrate and a Fabry - Perot resonator. The Fabry - Perot resonator is formed by combining a first reflective film, a graphene oxide nonlinear dielectric layer, and a second reflective film, which can achieve optical spatial parallel propagation and interconnection in optical switching, thereby better performing high - density information storage, improving the processing speed, having low energy consumption, and being smaller in size and more convenient for integration and manufacturing compared with existing memristors, and can be mass - produced. The preparation method of the photonic memristor of the present invention forms a Fabry - Perot resonator on the substrate. The Fabry - Perot resonator includes a first reflective film, a second reflective film, and a graphene oxide nonlinear dielectric layer located between the first reflective film and the second reflective film. The use of the Fabry - Perot resonator structure makes the photonic memristor thinner, easier to manufacture, and provides a guarantee for mass production. Description of the Drawings

[0037] Figures 1a - 1e It is a schematic diagram of the principle flow for preparing the photonic memristor of the present invention;

[0038] Figure 2 It is a schematic diagram of the incident light intensity - reflected light intensity characteristic curve of the photonic memristor of the present invention;

[0039] Figure 3 It is a flowchart of an embodiment of the preparation method of the photonic memristor of the present invention. Detailed Embodiments

[0040] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts fall within the scope of protection of the present invention.

[0041] It should be noted that, without conflict, the embodiments in the present invention and the features in the embodiments can be combined with each other.

[0042] Next, the present invention will be further described in conjunction with the accompanying drawings and specific embodiments, but it is not a limitation of the present invention.

[0043] Example 1

[0044] Referring to Figures 1a - 1e as shown, this embodiment provides a photonic memristor, including: a substrate 1 and a Fabry - Perot resonator; the Fabry - Perot resonator is formed on the upper surface of the substrate 1, wherein, the Fabry - Perot resonator includes:

[0045] A first reflective film, formed on the upper surface of the substrate 1;

[0046] A second reflective film, located above the first reflective film;

[0047] A graphene oxide nonlinear dielectric layer 4 located between the first reflective film and the second reflective film.

[0048] Wherein, the thickness of the graphene oxide nonlinear dielectric layer 4 is between 1nm - 10nm.

[0049] In practical applications, the graphene oxide nonlinear dielectric layer 4 can be prepared by the method of multiple stacking of 1mg / ml graphene oxide solution and 2% pdda (diethylene glycol diacrylate phthalate) solution. In addition, the graphene oxide nonlinear dielectric layer 4 can also be prepared by the drop - casting method and / or spraying method. However, the nonlinear dielectric layers prepared by these two methods are too thick and the effect is not good.

[0050] In this embodiment, the photonic memristor is composed of a substrate 1 and a Fabry - Perot resonator. The Fabry - Perot resonator is formed by combining the first reflective film, the graphene oxide nonlinear dielectric layer 4 and the second reflective film, which can realize the optical spatial parallel propagation and interconnection in optical switching, so as to better perform high - density information storage, improve the processing speed, with low energy consumption. And compared with the existing memristors, it has a smaller size, is convenient for integration and manufacturing, can be mass - produced, and has a low cost. The photonic memristor of this embodiment is a planar - structured reflective graphene - based photonic memristor device. Not only is the preparation method simple, but it can also realize the function of the reflection light intensity value transformation when applying the threshold light intensity under pulsed laser operation, which is of great significance for the ultimate realization in the field of neuromorphic computing.

[0051] In a preferred embodiment, the substrate 1 can be made of silicon material (such as: Al2O3) or flexible organic material (such as: polydimethylsiloxane, Polydimenthylsiloane, PDMS). Al2O3 is an inorganic compound with high hardness, high melting point, high boiling point and is not easily corroded in air. The chemical state of polydimethylsiloxane is dimethyl silicone oil. Depending on the different relative molecular weights, its appearance ranges from a colorless and transparent volatile liquid to an extremely high-viscosity liquid or silica gel. It is odorless, has high transparency, has heat resistance, cold resistance, small viscosity change with temperature, water resistance, small surface tension, has thermal conductivity, and the thermal conductivity coefficient is 0.134 - 0.159 W / (m·K), and the light transmittance is 100%. Dimethyl silicone oil is non-toxic and odorless, has physiological inertness, good chemical stability, good electrical insulation and weather resistance, good hydrophobicity, and has a very high shear resistance and can be used for a long time at -50°C to 200°C. It has excellent physical properties and can be directly used in scenarios such as moisture-proof insulation.

[0052] In one embodiment, the first reflective film may include: a first reflective layer 2 and a first isolation layer 3. Among them, the first reflective layer 2 is formed on the upper surface of the substrate 1; the first isolation layer 3 is formed on the upper surface of the reflective layer.

[0053] Furthermore, the first reflective layer 2 is a metal reflective layer.

[0054] By way of example and not limitation, the first reflective layer 2 can be made of nano gold. Nano gold refers to tiny particles of gold with a diameter ranging from 1 nm to 100 nm, which have high electron density, dielectric properties and catalytic effects, can bind to a variety of biological macromolecules without affecting their biological activities. Devices prepared with nano gold have the advantages of high sensitivity and good specificity. In practical applications, a reflective layer of nano gold can be formed on the upper surface of the substrate 1 by magnetron sputtering.

[0055] In a preferred embodiment, the first isolation layer 3 is an inorganic dielectric layer. The first isolation layer 3 can be made of a variety of oxide materials, such as SiO2, Al2O3, etc. In practical applications, the first isolation layer 3 can be formed on the upper surface of the first reflective layer 2 by using magnetron sputtering in combination with the deposition method.

[0056] In one embodiment, the second reflective film may include: a second isolation layer 5 and a second reflective layer 6. Among them, the second isolation layer 5 is formed on the upper surface of the graphene oxide nonlinear dielectric layer 4; the second reflective layer 6 is formed on the upper surface of the second isolation layer 5.

[0057] Further, the second isolation layer 5 is an inorganic dielectric layer. The material of the second isolation layer 5 can be the same as that of the first isolation layer 3. The second isolation layer 5 can adopt a variety of oxide materials, such as SiO2, Al2O3, etc. In practical applications, magnetron sputtering method can be used in combination with deposition method to form the second isolation layer 5 on the upper surface of the graphene oxide nonlinear dielectric layer 4.

[0058] It should be noted that: the thicknesses of both the first isolation layer 3 and the second isolation layer 5 are between 20nm and 140nm, and the thickness of the first isolation layer 3 is different from that of the second isolation layer 5.

[0059] In this embodiment, the first isolation layer 3 and the second isolation layer 5 can be obtained through Lumerical FDTD simulation. In the visible light wavelength range, the thickness ranges of the first isolation layer 3 and the second isolation layer 5 are the same, but the thicknesses of the two isolation layers are different, and the corresponding thicknesses are different under different incident wavelength conditions. In addition to magnetron sputtering coating, electron beam evaporation, chemical vapor deposition or other coating methods can also be used to form the isolation layer.

[0060] In a preferred embodiment, the second reflective layer 6 is a metal reflective layer.

[0061] By way of example and not limitation, the material of the second reflective layer 6 can be the same as that of the first reflective layer 2. In practical applications, the second reflective layer 6 can be formed on the upper surface of the second reflective layer 6 by magnetron sputtering method.

[0062] It should be noted that: the thicknesses of both the first reflective layer 2 and the second reflective layer 6 are between 25nm and 110nm, and the thickness of the first reflective layer 2 is different from that of the second reflective layer 6.

[0063] In this embodiment, the data values of the first reflective layer 2 and the second reflective layer 6 can be obtained through Lumerical FDTD simulation. In the visible light wavelength range, the thicknesses of the first reflective layer 2 and the second reflective layer 6 are inconsistent and the corresponding thicknesses are different under different incident wavelength conditions. In addition to magnetron sputtering coating, electron beam evaporation, chemical vapor deposition or other coating methods can also be used to form the reflective layer.

[0064] Figure 2 It is the incident light intensity - reflected light intensity characteristic diagram of the photon memristor in this embodiment. It can be seen that the photon memristor has typical memory characteristics. From the incident light intensity - reflected light intensity test diagram, it can be known that the device has a typical storage function. By increasing the incident light energy, the device writes information, and by decreasing the incident light energy, the device erases information. Using different light intensity magnitudes, the storage state of the device can be adjusted to achieve the purpose of weight modulation. Figure 2 The abscissa in represents the incident light intensity I in, the vertical coordinate represents the reflected light intensity I ref , the solid line represents a simple simulation result, and the solid dots represent the experimental results. When the incident light intensity gradually increases, the transmitted light intensity slowly rises monotonically; when the incident light intensity reaches a certain critical value, the system suddenly becomes transparent, and the transmitted light intensity is almost equal to the incident light intensity; if the incident light intensity is decreased at this time, the system will remain in the high-transmission state and does not return to the low-transmission state along the original route; until the incident light intensity reaches another critical value, the system returns to the low-transmission state, and the bistable system can switch back and forth between the two storage states to achieve the memristive function.

[0065] Example 2

[0066] Refer to Figures 1a - 1e and Figure 3 As shown, this embodiment provides a method for preparing a photonic memristor, including the following steps:

[0067] Form a Fabry-Perot resonator on the substrate 1, and the Fabry-Perot resonator includes a first reflective film, a second reflective film, and a graphene oxide nonlinear dielectric layer 4 located between the first reflective film and the second reflective film.

[0068] Further forming a Fabry-Perot resonator on the substrate 1 includes the following steps:

[0069] S1. Use magnetron sputtering to form a first reflective layer 2 on the upper surface of the substrate 1.

[0070] Among them, the substrate 1 can be made of silicon material (such as: Al2O3) or flexible organic material (such as: polydimethylsiloxane, PDMS). Al2O3 has characteristics such as high hardness, high melting point, high boiling point, and is not easily corroded in the air. PDMS has excellent physical properties and can be used in scenarios such as moisture-proof insulation.

[0071] In this embodiment, the thickness of the first reflective layer 2 is between 25nm - 110nm. The first reflective layer 2 can be made of nano-gold. Nano-gold refers to tiny particles of gold with a diameter between 1nm and 100nm, which have high electron density, dielectric properties, and catalytic effects, can bind to a variety of biological macromolecules, and do not affect their biological activities. The device prepared with nano-gold has the advantages of high sensitivity and good specificity. In practical applications, a reflective layer of nano-gold can be formed on the upper surface of the substrate 1 by magnetron sputtering.

[0072] S2. Use magnetron sputtering and deposition methods to form a first isolation layer 3 on the upper surface of the first reflective layer 2, and the first reflective layer 2 and the first isolation layer 3 constitute the first reflective film.

[0073] Among them, the deposition method can be any one of the mask method, the coating method, or the chemical vapor deposition method.

[0074] In this embodiment, the first isolation layer 3 is an inorganic dielectric layer. The first isolation layer 3 can adopt a variety of oxide materials, such as SiO2, Al2O3, etc. In practical applications, magnetron sputtering can be used in combination with the deposition method to form the first isolation layer 3 on the upper surface of the first reflective layer 2.

[0075] S3. Prepare the graphene oxide nonlinear dielectric layer 4 on the upper surface of the first isolation layer 3 by using a preset concentration reagent in multiple stacking or dropping or spraying methods.

[0076] Furthermore, the preset concentration reagent is a mixed solution of a 1mg / ml - 5mg / ml graphene oxide solution and a 2% - 10% diethylene glycol diacrylate phthalate solution.

[0077] In this embodiment, the thickness of the graphene oxide nonlinear dielectric layer 4 is between 1nm and 10nm.

[0078] In practical applications, the graphene oxide nonlinear dielectric layer 4 can be prepared by using a mixed solution of a 1mg / ml graphene oxide solution and a 2% pdda (diethylene glycol diacrylate phthalate) solution in multiple stacking methods. In addition, the graphene oxide nonlinear dielectric layer 4 can also be prepared by dropping and / or spraying methods, but the nonlinear dielectric layers prepared by these two methods are too thick and the effects are not good.

[0079] S4. Use magnetron sputtering and deposition methods to form the second isolation layer 5 on the upper surface of the graphene oxide nonlinear dielectric layer 4.

[0080] Among them, the deposition method can be any one of the mask method, the coating method, or the chemical vapor deposition method.

[0081] In this embodiment, the second isolation layer 5 is an inorganic dielectric layer. The material of the second isolation layer 5 can be the same as that of the first isolation layer 3. The second isolation layer 5 can adopt a variety of oxide materials, such as SiO2, Al2O3, etc. In practical applications, magnetron sputtering can be used in combination with the deposition method to form the second isolation layer 5 on the upper surface of the graphene oxide nonlinear dielectric layer 4.

[0082] It should be noted that: the thickness ranges of the second isolation layer 5 and the first isolation layer 3 are the same, but the thickness of the first isolation layer 3 is different from the thickness of the second isolation layer 5.

[0083] In this embodiment, the first isolation layer 3 and the second isolation layer 5 can be obtained through Lumerical FDTD simulation. In the visible light wavelength range, the thickness intervals of the first isolation layer 3 and the second isolation layer 5 are the same, but the thicknesses of the two isolation layers are different, and the corresponding thicknesses are different under different incident wavelength conditions. In addition to magnetron sputtering coating, the isolation layer can also be formed by electron beam evaporation, chemical vapor deposition or other coating methods.

[0084] S5. A second reflective layer 6 is formed on the upper surface of the second isolation layer 5 by magnetron sputtering, and the second isolation layer 5 and the second reflective layer 6 constitute the second reflective film.

[0085] In this embodiment, the second reflective layer 6 is a metal reflective layer.

[0086] By way of example and not limitation, the material of the second reflective layer 6 can be the same as that of the first reflective layer 2. In practical applications, the second reflective layer 6 can be formed on the upper surface of the second reflective layer 6 by magnetron sputtering.

[0087] It should be noted that: the thickness ranges of the first reflective layer 2 and the second reflective layer 6 are the same, both between 25 nm and 110 nm, but the thickness of the first reflective layer 2 is different from the thickness of the second reflective layer 6.

[0088] In this embodiment, the data values of the first reflective layer 2 and the second reflective layer 6 can be obtained through Lumerical FDTD simulation. In the visible light wavelength range, the thicknesses of the first reflective layer 2 and the second reflective layer 6 are inconsistent, and the corresponding thicknesses are different under different incident wavelength conditions. In addition to magnetron sputtering coating, the reflective layer can also be formed by electron beam evaporation, chemical vapor deposition or other coating methods.

[0089] In this embodiment, the method for fabricating a photon memristor to form a Fabry - Perot resonator on the substrate 1 is simple and can be mass - produced. The Fabry - Perot resonator includes a first reflective film, a second reflective film, and a graphene oxide nonlinear dielectric layer 4 located between the first reflective film and the second reflective film. Adopting the Fabry - Perot resonator structure makes the photon memristor thinner, easier to manufacture, and provides a guarantee for mass production. It provides many potential advantages for optical signal processing and computing. Compared with electronic devices, the photon memristor of this embodiment is particularly excellent in the optical spatial parallel propagation and interconnection ability in optical switching. In addition, the potential benefits of multi - valued logic are higher information storage density, higher processing speed, and smaller logic device size. The photon memristor of this application can be applied to artificial synapses, artificial nerve cell bodies, and bionic brain - like photonics computing.

[0090] The photon memristor of this application based on the principle of optical bistability consumes 1000 times less energy than traditional electronic photon memristors, and its computing speed is more than 100,000 times that of electronic photon memristors. The preparation method of the photon memristor of this application is simple, low-cost and compatible with traditional CMOS processes, capable of reaching micro-nano sizes for large-scale integration, and can be applied to the field of memory. The photon memristor of this application can gradually change the light intensity of the device under pulsed laser operation to achieve multiple storage states. It is of great significance for the ultimate realization of multi-value storage and neuromorphic computing hardware.

[0091] By way of example and not limitation, the method for preparing a photon memristor includes the following steps:

[0092] 1) Deposit a 110-nm-thick gold film as the first reflective layer 2 on the substrate 1 by magnetron sputtering;

[0093] 2) Prepare a 140-nm Al2O3 first isolation layer 3 on the upper surface of the first reflective layer 2 by magnetron sputtering;

[0094] 3) Prepare a graphene oxide nonlinear dielectric layer 4 on the upper surface of the first isolation layer 3 by repeatedly stacking a 1 mg / ml graphene oxide solution and a 2% concentration pdda solution;

[0095] 4) Prepare a 20-nm Al2O3 second isolation layer 5 on the upper surface of the graphene oxide nonlinear dielectric layer 4 by magnetron sputtering;

[0096] 5) Deposit a 25-nm gold film as the second reflective layer 6 on the upper surface of the second isolation layer 5 by magnetron sputtering.

[0097] The above data can be obtained through Lumerical FDTD simulation, which is the optimal solution under the condition of a visible light wavelength of 800 nm, and the corresponding thicknesses are different under different incident wavelength conditions.

[0098] Example Three

[0099] The present invention also provides a chip, including the above-mentioned photon memristor. The chip can be composed of multiple photon memristors, and this chip can be applied to brain-like functional devices. The photon memristor can also be used to construct a neural network architecture.

[0100] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of this application, rather than to limit them; although this application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A photon memristor, characterized in that, Comprising: A substrate; A Fabry - Perot resonator formed on the upper surface of the substrate, and the Fabry - Perot resonator includes: A first reflective film formed on the upper surface of the substrate; A second reflective film located above the first reflective film; A graphene oxide nonlinear dielectric layer located between the first reflective film and the second reflective film; Wherein, the graphene oxide nonlinear dielectric layer is prepared by repeatedly stacking graphene oxide solution and PDDA solution.

2. The photon memristor according to claim 1, wherein The substrate is made of silicon material or flexible organic material.

3. The photon memristor according to claim 1, wherein The first reflective film includes: A first reflective layer formed on the upper surface of the substrate; A first isolation layer formed on the upper surface of the reflective layer.

4. The photon memristor according to claim 3, wherein The first reflective layer is a metal reflective layer.

5. The photon memristor according to claim 3, wherein The first isolation layer is an inorganic dielectric layer.

6. The photon memristor according to claim 3, wherein The second reflective film includes: A second isolation layer formed on the upper surface of the graphene oxide nonlinear dielectric layer; A second reflective layer formed on the upper surface of the second isolation layer.

7. The photonic memristor according to claim 6, characterized in that, The thicknesses of both the first reflective layer and the second reflective layer are between 25 nm and 110 nm, and the thickness of the first reflective layer is different from the thickness of the second reflective layer.

8. The photon memristor according to claim 6, wherein The thicknesses of both the first isolation layer and the second isolation layer are between 20 nm and 140 nm, and the thickness of the first isolation layer is different from the thickness of the second isolation layer.

9. The photonic memristor according to claim 6, wherein The second reflective layer is a metal reflective layer.

10. The photoresistor according to claim 6, characterized in that, The second isolation layer is an inorganic dielectric layer.

11. The photonic memristor according to claim 1, characterized in that, The thickness of the graphene oxide nonlinear dielectric layer is between 1 nm and 10 nm.

12. A method for preparing a photonic memristor, characterized in that, Comprising: Forming a Fabry - Perot resonator on a substrate, and the Fabry - Perot resonator includes a first reflective film, a second reflective film, and a graphene oxide nonlinear dielectric layer located between the first reflective film and the second reflective film; Wherein, the graphene oxide nonlinear dielectric layer is prepared by repeatedly stacking graphene oxide solution and PDDA solution.

13. The method for preparing a photonic memristor according to claim 12, wherein Forming a Fabry - Perot resonator on a substrate, including: Forming a first reflective layer on the upper surface of the substrate by magnetron sputtering; Forming a first isolation layer on the upper surface of the first reflective layer by magnetron sputtering and deposition method, and the first reflective layer and the first isolation layer constitute the first reflective film; Preparing the graphene oxide nonlinear dielectric layer on the upper surface of the first isolation layer by repeatedly stacking or drop - casting or spraying with a reagent of a preset concentration; Forming a second isolation layer on the upper surface of the graphene oxide nonlinear dielectric layer by magnetron sputtering and deposition method; Forming a second reflective layer on the upper surface of the second isolation layer by magnetron sputtering, and the second isolation layer and the second reflective layer constitute the second reflective film.

14. The method for preparing a photonic memristor according to claim 13, wherein The deposition method is one of a mask method and a coating method.

15. The method for preparing a photonic memristor according to claim 13, wherein The reagent of the preset concentration is a mixed solution of a 1 mg / ml - 5 mg / ml graphene oxide solution and a 2% - 10% diethylene glycol diacrylate phthalate solution.

16. A chip, characterized in that, Including the photonic memristor according to any one of claims 1 - 11.

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