Semiconductor element and semiconductor element manufacturing method

Abstract

A semiconductor device of the present application includes: a mounting substrate having a first surface; a semiconductor chip mounted on the first surface and having a second surface facing an opposite side of the first surface; and a wire extending from a first bonding point on the first surface to a second bonding point on the second surface, the mounting substrate and the semiconductor chip being electrically connected by connecting the first bonding point and the second bonding point, the wire including: a first portion, a first bent portion, a second portion, a second bent portion, and a third portion arranged in this order from the first bonding point toward the second bonding point, the first portion being located on the first surface side of the second surface as viewed in a first direction along the first surface and the second surface, the first bent portion being located on the first surface side of the second surface as viewed in the first direction and being bent in a manner to direct the second portion to the second surface side, the second portion extending beyond the second surface toward the opposite side of the first surface as viewed in the first direction.

Description

Technical Field

[0001] This disclosure relates to a semiconductor device and a method for manufacturing a semiconductor device. Background Technology

[0002] Patent Document 1 describes a semiconductor device. In this device, the pads (first bonding points) of a semiconductor chip mounted on a leadframe are connected to the leads (second bonding points) of the leadframe via wires. The wire loop connecting the first and second bonding points is trapezoidal in shape when viewed from the side due to the neck height portion on the first bonding point side, the inclined portion on the second bonding point side, and the trapezoidal length portion (top portion of the loop) between the neck height portion and the inclined portion. The trapezoidal length portion is formed with a downward concave shape.

[0003] Existing technical documents

[0004] Patent documents

[0005] [Patent Document 1] Japanese Patent No. 3189115 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] In the semiconductor device described in the aforementioned Patent Document 1, a ring with a high shape retention force relative to external pressure is formed by forming a shape with a concave tendency on the top portion of the ring relative to the wire.

[0008] On the other hand, for semiconductor devices as described above, there is a requirement for sealing with resin. In this case, sealing resin is also disposed between the conductor and the lead frame (conductor-intercalated sealing resin). Therefore, stress caused by the expansion and contraction of the sealing resin due to thermal cycling is applied to the conductor. The more resin between the conductor and the lead frame, the greater the stress applied to the conductor in response to thermal cycling, which may damage the conductor and reduce reliability.

[0009] The purpose of this disclosure is to provide a semiconductor device and a method for manufacturing a semiconductor device that can suppress reliability degradation.

[0010] Methods for solving problems

[0011] The semiconductor element disclosed herein includes: a mounting substrate having a first surface; a semiconductor chip mounted on the first surface and having a second surface facing the opposite side of the first surface; and a wire extending from a first junction point on the first surface toward a second junction point on the second surface, electrically connecting the mounting substrate and the semiconductor chip by connecting the first junction point and the second junction point. The wire includes: a first portion, a first bend, a second portion, a second bend, and a third portion arranged sequentially from the first junction point toward the second junction point. The first portion extends from the first junction point toward the second junction point... Viewed from the first direction of the first and second surfaces, the first curved portion is located closer to the first surface than the second surface. Viewed from the first direction, the first curved portion is located closer to the first surface than the second surface and is curved in a way that guides the second portion to the second surface. Viewed from the first direction, the second portion extends across the second surface to the opposite side of the first surface. The second curved portion is curved in a way that guides the third portion to the second surface. Viewed from the first direction, the third portion extends towards the second surface from a position that crosses the second surface to the opposite side of the first surface and joins the second joining point.

[0012] In this semiconductor device, a wire is provided for electrically connecting a mounting substrate to a semiconductor chip mounted on the mounting substrate. The wire connects a first bonding point on a first surface of the mounting substrate on which the semiconductor chip is mounted, and a second bonding point on a second surface of the semiconductor chip. The wire includes a first portion, a first bend, a second portion, a second bend, and a third portion arranged sequentially from the first bonding point toward the second bonding point (from the mounting substrate toward the semiconductor chip). The first portion is the portion of the wire extending from the first bonding point and is located closer to the first surface than the second surface (e.g., lower than the second surface). The third portion is the portion of the wire bonded to the second bonding point and is located at a position that crosses the second surface on the opposite side of the first surface (e.g., higher than the second surface). The second portion is the portion between the first and third portions and extends across the second surface from the position on the first surface side.

[0013] According to this structure, when the semiconductor element is sealed with resin, sealing resin is disposed between the wire and the mounting substrate. In contrast, in the wire, the first bend between the first and second portions is located closer to the first surface than the second surface, and bends in a manner that guides the second portion to the second surface. That is, compared to the case without the first bend, the wire extends along the first surface before reaching the first bend (i.e., the first portion), and extends beyond the second surface after reaching the first bend (i.e., the second portion). In other words, compared to the case without the first bend, the wire extends in a manner similar to the corner formed by the mounting substrate and the semiconductor chip. As a result, the amount of resin trapped in the wire is reduced when the semiconductor element is sealed with resin. Therefore, according to this semiconductor element, the stress applied to the wire in response to thermal cycling can be reduced, suppressing a decrease in reliability.

[0014] Furthermore, in this semiconductor device, the wire bends at the second bend between the second and third portions, extending beyond the second surface, while the third portion is guided to the second surface side. The third portion extends towards the second surface from the position beyond it and engages at the second bonding point. Therefore, compared to the case where there is no second bend and no third portion, the second portion extends from the first surface side and directly engages at the second bonding point, preventing the wire from contacting the corner of the semiconductor chip. This further suppresses a decrease in reliability.

[0015] In the semiconductor element disclosed herein, the first bend may also be located closer to the first junction point than the center in the extension direction of the conductor. In this case, the first bend is formed at a position farther from the semiconductor chip. As a result, when forming the first bend, contact between the holder (bonding pin) holding the conductor and the semiconductor chip can be suppressed.

[0016] In the semiconductor device disclosed herein, the first bend may be located further toward the second junction point than the center of the conductor in the extension direction. In this case, the first bend is formed closer to the semiconductor chip. As a result, the portion of the conductor extending along the first surface (the first portion) can be ensured to be relatively long, further reducing the amount of resin entrained in the conductor. That is, the stress applied to the conductor can be reliably reduced, and the reduction in reliability can be reliably suppressed.

[0017] In the semiconductor element disclosed herein, the conductor may also include a fourth portion extending in a manner that connects the first bent portion to the second portion. In this case, the height of the semiconductor chip from the first surface can be ensured by at least the second and fourth portions, thus eliminating the need for sharp bends that easily lead to stress concentration. Therefore, the reduction in reliability can be further reliably suppressed.

[0018] In the semiconductor device disclosed herein, the wires may extend obliquely relative to the outer edge of the semiconductor chip when viewed from a second direction intersecting the second surface. In this case, compared to the case where the wires are perpendicular to the outer edge of the semiconductor chip, it is easier to ensure that the length of the wires (the distance between the first junction point and the second junction point) is longer. As a result, the above-described structure of the wires, which includes multiple portions and multiple bends, can be easily realized.

[0019] The semiconductor device manufacturing method disclosed herein is used to manufacture the aforementioned semiconductor device, and includes: a first step of preparing a mounting substrate, a semiconductor chip mounted on a first side of the mounting substrate, and at least a base material for a conductive wire; a second step of moving a solder pin holding the base material to a first bonding point after the first step, and bonding the front end of the base material protruding from the solder pin to the first bonding point; a third step of moving the solder pin while extending the base material from the solder pin after the second step, forming at least a first portion, a first bend, a second portion, a second bend, and a third portion arranged sequentially; and a fourth step of bonding the base material to a second bonding point by moving the solder pin to a second bonding point after the third step, thereby forming a conductive wire extending from the first bonding point to the second bonding point.

[0020] The aforementioned semiconductor device is manufactured using this manufacturing method. That is, a semiconductor device with suppressible reliability degradation is obtained.

[0021] The semiconductor device manufacturing method disclosed herein may also include: a fifth step, which, after the first step and before the second step, involves moving a solder pin to a second bonding point, bonding the front end of a base material protruding from the solder pin to the second bonding point, and then cutting off the front end, thereby forming a bonding portion at the second bonding point. In a fourth step, the base material is bonded to the second bonding point via the bonding portion. In this case, when the front end of the base material protruding from the solder pin is bonded to the second bonding point after forming each portion of the conductive wire, the bonding portion already formed at the second bonding point is present, thus reducing the impact on the semiconductor chip side. Specifically, the bonding portion is formed using the solder pin and the base material used to form each portion of the conductive wire, thereby simplifying the process.

[0022] Invention Effects

[0023] According to this disclosure, a semiconductor device and a method for manufacturing a semiconductor device that can suppress reliability degradation can be provided. Attached Figure Description

[0024] Figure 1 This is a diagram illustrating a semiconductor element of an embodiment.

[0025] Figure 2 It is shown Figure 1 A photograph of an example of a semiconductor device.

[0026] Figure 3 It shows the manufacturing process. Figure 1 A schematic cross-sectional view of one step in a semiconductor device manufacturing method, as shown.

[0027] Figure 4 It shows the manufacturing process. Figure 1 A schematic cross-sectional view of one step in a semiconductor device manufacturing method, as shown.

[0028] Figure 5 It shows the manufacturing process. Figure 1 A schematic cross-sectional view of one step in a semiconductor device manufacturing method, as shown.

[0029] Figure 6 This is a diagram showing the semiconductor element of the first modified example.

[0030] Figure 7 This is a diagram showing the semiconductor element of the second variation.

[0031] Figure 8 This is a diagram showing the semiconductor element of the third variation. Detailed Implementation

[0032] Hereinafter, one embodiment will be described in detail with reference to the accompanying drawings. Furthermore, in each drawing, the same or equivalent elements are given the same reference numerals, and sometimes repeated descriptions are omitted.

[0033] Figure 1 This is a diagram illustrating a semiconductor element of an embodiment. Figure 1 (a) is a schematic top view. Figure 1 (b) is along Figure 1 (a) Schematic cross-sectional view of the Ib-Ib line. Figure 2 It is shown Figure 1 A photograph of an example of a semiconductor device. (See attached image.) Figure 1 , 2 As shown, the semiconductor element 1 includes: a mounting substrate 10, a semiconductor chip 20, a wire 30, and a resin portion M. Furthermore, Figure 1 (a) The diagram omitting the resin part M.

[0034] The substrate 10 includes a surface (first surface) 10s and a back surface 10r opposite to the surface 10s. A plurality of plate-shaped electrodes 13 are formed on the surface 10s. Each of the plurality of electrodes 13, as an example, is elongated in the direction along the outer edge 20e of the semiconductor chip 20, which will be described later. The plurality of electrodes 13 are arranged along the outer edge 20e.

[0035] Semiconductor chip 20 is mounted on surface 10s. Semiconductor chip 20 may be directly disposed on surface 10s or disposed on surface 10s with other components in between. Semiconductor chip 20 includes: surface (second surface) 20s, and back surface 20r opposite to surface 20s. The distance between surface 20s and back surface 20r defines the height T of semiconductor chip 20 from surface 10s. Back surface 20r is the side facing surface 10s of the mounting substrate 10, and surface 20s is the side facing the opposite side of surface 10s of the mounting substrate 10. Here, at least surface 10s and surface 20s are parallel to each other.

[0036] The semiconductor chip 20 is, for example, rectangular in shape and has an outer edge 20e extending in a straight line. The outer edge 20e is the outer edge of the semiconductor chip 20 facing the electrode 13 side (the junction 51 side described later). The semiconductor chip 20 is, for example, a semiconductor light-receiving element (such as a Si photodiode).

[0037] A bonding portion 51 is formed on the surface 10s of the substrate 10, and a bonding portion 52 is formed on the surface 20s of the semiconductor chip 20. The bonding portion 51 is formed on the electrode 13. The bonding portion 52 is formed on the electrode 21 exposed on the surface 20s side of the semiconductor chip 20 and is electrically connected to the semiconductor chip 20. As described later, the bonding portions 51 and 52 are integrally formed with the wire 30 using the same material. Therefore, the wire 30 is bonded to the electrode 13 via the bonding portion 51 on the substrate 10 side, and to the electrode 21 via the bonding portion 52 on the semiconductor chip 20 side. That is, the electrode 13 is the first bonding point of the wire 30, and the electrode 21 is the second bonding point of the wire 30. The edges of the outer edge 20e of the semiconductor chip 20 and the outer edge 20e side of the electrode 13 define the distance D between the semiconductor chip 20 and the electrode 13.

[0038] Furthermore, in the following, the direction that intersects (or is orthogonal) with the direction from electrode 13 toward electrode 21 (the extension direction of wire 30) and runs along surfaces 10s and 20s is sometimes referred to as the first direction, and the direction that intersects (or is orthogonal) with surfaces 10s and 20s is referred to as the second direction. The first direction is, for example, a horizontal direction, and the second direction is, for example, a vertical direction.

[0039] Furthermore, no structures such as recesses or holes are provided between the region where the electrode 13 is disposed on the surface 10s of the substrate 10 and the region where the semiconductor chip 20 is disposed on the surface 10s, thereby reducing the thickness of the substrate 10 (the distance between the surface 10s and the back surface 10r). Therefore, the thickness of the substrate 10 in the region between the region where the electrode 13 is disposed on the surface 10s and the region where the semiconductor chip 20 is disposed on the surface 10s is constant. However, the thickness of the substrate 10 can also be such that the region between the region where the electrode 13 is disposed on the surface 10s and the region where the semiconductor chip 20 is disposed on the surface 10s is thicker than other regions.

[0040] Furthermore, an insulating member 60, such as a photoresist, is formed on the surface 10s between the region where the electrode 13 is disposed on the surface 10s and the region where the semiconductor chip 20 is disposed on the surface 10s. The insulating member 60 is located between the surface 10s and the wire 30 when viewed from the first direction, and between the semiconductor chip 20 and the electrode 13 when viewed from the second direction.

[0041] A wire 30 extends from electrode 13 toward electrode 21 and is used to electrically connect the mounting substrate 10 and the semiconductor chip 20 by connecting electrode 13 and electrode 21. As described above, the wire 30 is integrated with each of the junction portions 51 on electrode 13 and junction portions 52 on electrode 21. The wire 30 is made of a metal such as gold. The wire 30 includes a first portion 31, a first bend 41, a second portion 32, a second bend 42, and a third portion 33 arranged sequentially from electrode 13 toward electrode 21.

[0042] Here, the first part 31 and the second part 32 are interconnected via the first bend 41, and the second part 32 and the third part 33 are interconnected via the second bend 42. That is, here, the wire 30 is composed of the first part 31, the first bend 41, the second part 32, the second bend 42, and the third part 33. The wire 30 is joined to the junction 51 at the first part 31 (joined to the electrode 13 via the junction 51), and joined to the junction 52 at the third part 33 (joined to the electrode 21 via the junction 52).

[0043] The first part 31 is composed of a base end portion 31a joined to the electrode 13 via a joint portion 51, a front end portion 31c connected to the second part 32, and a curved portion 31b connecting the base end portion 31a and the front end portion 31c. Here, the base end portion 31a extends from the electrode 13 toward the opposite side (here, the upper side) of the surface 10s to the curved portion 31b. The curved portion 31b is curved in a manner that protrudes toward the opposite side of the surface 10s. The front end portion 31c extends obliquely toward the surface 10s away from the curved portion 31b and reaches the second part 32. The first part 31, as a whole, is located on the side closer to the surface 10s than the surface 20s (here, on the lower side than the surface 20s). That is, the first part 31 is accommodated on the side closer to the surface 10s than the surface 20s.

[0044] The first bend 41, viewed from the first direction, is located closer to the surface 10s than the surface 20s, and lies between the first portion 31 and the second portion 32, connecting the first portion 31 and the second portion 32. The first bend 41 bends in a manner that protrudes towards the surface 10s. Thus, the inclination of the wire 30, viewed from the first direction, changes from the inclination of the front end 31c of the first portion 31, which approaches the surface 10s towards the electrode 21, to the inclination of the second portion 32, described later, which moves away from the surface 10s towards the electrode 21. In other words, the first bend 41 bends in a manner that guides the second portion 32 towards the surface 20s. The first bend 41 is located closer to the electrode 13 than the center of the wire 30 in its extension direction.

[0045] In part 32, viewed from the first direction, a portion of the first bend 41 is located closer to the surface 10s than the surface 20s (here, it is located further below the surface 20s), and the remaining portion on the electrode 21 side protrudes from the surface 20s to the opposite side of the surface 10s (here, it is located further above the surface 20s). That is, part 32 extends from the first bend 41 across the surface 20s to the opposite side of the surface 10s. As described above, the wire 30, guided by the first bend 41 through part 32, is inclined in a manner that moves away from the surface 10s as it moves toward the electrode 21.

[0046] The second bend 42, viewed from the first direction, is located at a position protruding from the surface 20s on the opposite side to the surface 10s (here it is located higher than the surface 20s), and lies between the second portion 32 and the third portion 33, connecting the second portion 32 and the third portion 33. The second bend 42 bends in a manner that protrudes towards the opposite side of the surfaces 10s and 20s. Thus, the second bend 42 changes the inclination of the wire 30 when viewed from the first direction from an inclination in the second portion 32 that moves away from the surface 10s as it moves toward the electrode 21, to an inclination in the third portion 33 that moves closer to the surface 20s as it moves toward the electrode 21, as described later. In other words, the second bend 42 bends in a manner that guides the third portion 33 toward the surface 20s side. The second bend 42 is located closer to the electrode 21 than the center of the wire 30 in the extension direction of the wire 30.

[0047] The third part 33, viewed from the first direction, protrudes from the surface 20s toward the opposite side of the surface 10s (located higher than the surface 20s). That is, the third part 33, viewed from the first direction, extends toward the surface 20s from a position beyond the surface 20s toward the opposite side of the surface 10s and engages with the joint 52 (electrode 21). As described above, the wire 30 is guided by the second bend 42 through the third part 33, thereby tilting towards the surface 20s as it moves toward the electrode 21.

[0048] As described above, the wire 30, as a whole, is bent at the first bend 41 in a manner that protrudes toward the surface 10s side, and at the second bend 42 in a manner that protrudes toward the opposite side of the surfaces 10s and 20s, thereby extending in an M-shape from the electrode 13 to the electrode 21.

[0049] Furthermore, the conductor 30 is observed from the second direction intersecting the surfaces at 10s and 20s ( Figure 1 (a) The wire 30 extends at an angle relative to the outer edge 20e of the semiconductor chip 20 (at an angle relative to a line orthogonal to the outer edge 20e). However, when viewed from the second direction, the wire 30 may also extend parallel to a line orthogonal to the outer edge 20e of the semiconductor chip 20.

[0050] The resin portion M extends beyond the top surface (surface 20s) of the semiconductor chip 20 and is disposed on surface 10s. Thus, the entire semiconductor chip 20 and the conductive wire 30 are sealed by the resin portion M. The material of the resin portion M is, for example, silicon or epoxy resin.

[0051] Next, the manufacturing method of the semiconductor element 1 described above will be explained. Figures 3-5 It shows the manufacturing process. Figure 1 This is a schematic cross-sectional view of a step in a semiconductor device manufacturing method, illustrating a semiconductor device. In this manufacturing method, as... Figure 3 As shown in (a), firstly, a substrate 10, a semiconductor chip 20 mounted on the surface 10s of the substrate 10, and a base material 30A for at least the wires 30 are prepared (step S101, first step). The base material 30A is formed into a wire shape, for example, by using a metal such as gold. The base material 30A is held (inserted) in a capillary C equipped with a means for wire bonding.

[0052] Subsequently, as Figure 3 As shown in (a) to (c), the welding needle C is moved to the electrode 21, which serves as the second joint point. After the front end 30Aa of the base material 30A protruding from the welding needle C is joined to the electrode 21, the front end 30Aa is cut off, thereby forming a joint portion 52 on the electrode 21 (step S102, step 5). More specifically, in step S102, firstly, the front end 30Aa of the base material 30A protruding from the welding needle C is melted to form a wire ball. Then, the wire ball is pressed onto the electrode 21 while heat or ultrasound is applied. Thus, the joint portion 52 is formed from the wire ball. Subsequently, the joint portion 52 is cut off and separated from the base material 30A.

[0053] In the next process, such as Figure 4 As shown in (a) and (b), the welding needle C, which holds the base material 30A, is moved to a position on the electrode 13, and the new front end 30Aa of the base material 30A protruding from the welding needle C is joined to the electrode 13 as the first joint point (step S103, step 2). More specifically, in step S103, firstly, the front end 30Aa of the base material 30A protruding from the welding needle C is melted to form a wire ball. Then, the wire ball is pressed onto the electrode 13 while heat or ultrasound is applied. Thus, as... Figure 4 As shown in (c), a joint 51 is formed for ball bonding.

[0054] Next, as Figure 4 (c) and Figure 5As shown in (a) to (c), while the base material 30A is being drawn out from the welding needle C, the base material 30A is being tilted and the welding needle C is being moved to form a first part 31, a first bent part 41, a second part 32, a second bent part 42 and a third part 33 arranged in sequence (process S104, third process).

[0055] Subsequently, as Figure 5 As shown in (c), the welding pin C is moved to a position on the electrode 21, and the base material 30A is bonded to the electrode 21, thereby forming a wire 30 extending from the electrode 13 to the electrode 21 (step S105, step 4). More specifically, here, after pressing the edge portion of the front end of the base material 30A onto the bonding portion 52 and bonding the base material 30A to the bonding portion 52 by applying heat or ultrasound, the base material 30A is cut (stitch). Thus, stitch bonding is performed. Subsequently, the semiconductor element 1 is obtained by providing the resin portion M.

[0056] As explained above, the semiconductor element is provided with a wire 30 for electrically connecting the mounting substrate 10 and the semiconductor chip 20 mounted on the mounting substrate 10. The wire 30 connects the electrode 13 on the surface 10s on which the semiconductor chip 20 is mounted on the mounting substrate 10 to the electrode 21 on the surface 20s of the semiconductor chip 20. The wire 30 includes a first portion 31, a first bend 41, a second portion 32, a second bend 42, and a third portion 33 arranged sequentially from the electrode 13 toward the electrode 21 (from the mounting substrate 10 toward the semiconductor chip 20).

[0057] Part 1, 31, is the portion of the wire 30 extending from the electrode 13 (joint portion 51), located closer to the surface 10s than the surface 20s (e.g., lower than the surface 20s). Part 33, 33, is the portion of the wire 30 joined to the electrode 21 (joint portion 52), located beyond the surface 20s on the opposite side of the surface 10s (e.g., higher than the surface 20s). Part 2, 32, is the portion between Part 1, 31, and Part 33, extending beyond the surface 20s from the position on the surface 10s side.

[0058] According to this structure, a resin portion M is disposed between the wire 30 and the mounting substrate 10. In contrast, in the wire 30, the first bend 41 between the first portion 31 and the second portion 32 is located closer to the surface 10s than the surface 20s, and is bent in a manner that guides the second portion 32 to the surface 20s side. That is, compared to the case without the first bend 41, the wire 30 extends along the surface 10s side before reaching the first bend 41 (i.e., the first portion 31), and extends beyond the surface 20s after reaching the first bend 41 (i.e., the second portion 32). In other words, compared to the case without the first bend 41, the wire 30 extends in a manner similar to the corner formed by the mounting substrate 10 and the semiconductor chip 20. As a result, the amount of resin entrained in the wire 30 is reduced. Therefore, according to this semiconductor element 1, the stress applied to the wire 30 in response to thermal cycling can be reduced, suppressing a decrease in reliability.

[0059] Furthermore, in semiconductor element 1, the second bend 42 of the wire 30 between the second portion 32 and the third portion 33 bends at a position beyond the surface 20s, and the third portion 33 is guided to the surface 20s side. The third portion 33 extends from the position beyond the surface 20s toward the surface 20s and is bonded to the electrode 21 (bonding portion 52). Therefore, compared to the case where the second portion 32 extends from the surface 10s side and is directly bonded to the electrode 21 (bonding portion 52) without the second bend 42 and the third portion 33, contact between the wire 30 and the corner of the semiconductor chip 20 can be avoided. Therefore, a decrease in reliability can be further suppressed.

[0060] Furthermore, in semiconductor element 1, the first bend 41 is located closer to electrode 13 than the center of the extending direction of wire 30. Therefore, the first bend 41 is formed at a position farther from semiconductor chip 20. As a result, for example... Figure 5 As shown in (a), when the first bend 41 is formed, the contact between the holder of the retaining wire 30 (e.g., the aforementioned solder pin C) and the semiconductor chip 20 can be suppressed.

[0061] Furthermore, in semiconductor element 1, the wire 30, viewed from a second direction intersecting surfaces 10s and 20s, extends obliquely relative to the outer edge 20e of semiconductor chip 20. Therefore, compared to the case where the wire 30 is perpendicular to the outer edge 20e of semiconductor chip 20, it is easier to ensure a longer length for the wire 30. As a result, the aforementioned structure of the wire 30, including multiple sections and multiple bends, can be easily realized.

[0062] Furthermore, in the semiconductor device 1, an insulating member 60, such as a photoresist, is formed on the surface 10s between the region on the surface 10s where the electrode 13 is disposed and the region on the surface 10s where the semiconductor chip 20 is disposed. The insulating member 60 can be used, for example, for pattern formation of the substrate 10 or for insulation between wirings on the surface 10s. Being located between the surface 10s and the wire 30 also helps reduce the amount of resin trapped in the wire 30. Therefore, in the semiconductor device 1, a decrease in reliability can be further reliably suppressed.

[0063] Furthermore, the semiconductor device 1 described above is manufactured according to the semiconductor device manufacturing method of this embodiment. That is, a semiconductor device with suppressed reliability degradation can be obtained. In particular, the semiconductor device manufacturing method of this embodiment includes, after step S101 and before step S103, a step S102 in which a bonding pin C is moved to an electrode 21, and after the front end 30Aa of the base material 30A protruding from the bonding pin C is bonded to the electrode 21, the front end 30Aa is cut off, thereby forming a bonding portion 52 on the electrode 21. At this time, in step S105, the base material 30A is bonded to the electrode 21 via the bonding portion 52. As a result, when the front end of the base material 30A protruding from the bonding pin C is bonded to the electrode 21 after each portion of the conductive wire 30 is formed, the bonding portion 52 already formed on the electrode 21 is present, thus reducing the impact on the semiconductor chip 20 side. In particular, the joint 52 is formed here using solder pins C for forming the various parts of the conductor 30 and base material 30A, thus simplifying the process.

[0064] The above embodiments illustrate one aspect of this disclosure. Therefore, this disclosure is not limited to the above embodiments and any modifications are possible. As an example, the semiconductor element 1 in the above embodiments can be varied depending on the distance D between the semiconductor chip 20 and the electrode 13, or the height T of the semiconductor chip 20. Next, modifications of the semiconductor element 1 in the above embodiments will be described.

[0065] [First Variation]

[0066] Figure 6 This is a diagram showing the semiconductor element of the first modified example. Figure 6 (a) is a schematic cross-sectional view. Figure 6 (b) is an enlarged photograph. Figure 6 In the example shown, compared to Figure 1The distance D between electrode 13 and semiconductor chip 20 increases. In this case, by positioning the first bend 41 on the semiconductor chip 20 side, the length of the first portion 31, which extends further from surface 20s to surface 10s, can be relatively increased. Thus, the first bend 41 is positioned closer to electrode 21 than the center of the wire 30 in its extension direction. Furthermore, here, the front end portion 31c on the second portion 32 side of the first portion 31 is longer than the bend 31b; therefore, the first bend 41 is positioned on electrode 21 side.

[0067] According to the first modified example described above, the first bend 41 is formed closer to the semiconductor chip 20. As a result, the portion of the wire 30 extending on the surface 10s side (the first portion 31) is ensured to be relatively long, reducing the amount of resin trapped in the wire 30. That is, the stress applied to the wire 30 can be reliably reduced, and reliability degradation can be reliably suppressed.

[0068] [Second Variation]

[0069] Figure 7 This is a diagram showing the semiconductor element of the second variation. Figure 7 (a) is a schematic cross-sectional view. Figure 7 (b) is an enlarged photograph. Figure 7 In the example, compared to Figure 1 The height T of the semiconductor chip 20 increases. Here, between the first portion 31 and the first bend 41, there is a third bend 43 and a fourth portion 34. The third bend 43 and the fourth portion 34 are arranged sequentially in the direction from the electrode 13 toward the electrode 21.

[0070] The third bend 43 and the fourth portion 34 are located closer to the surface 10s than the surface 20s. The third bend 43 connects the first portion 31 and the fourth portion 34. The third bend 43 is bent in a manner that protrudes towards the surface 10s. That is, the third bend 43 is bent in the same direction as the first bend 41. As a result, the inclination of the third bend 43 of the conductor 30 when viewed from the first direction is changed from an inclination at the front end 31c of the first portion 31 that approaches the surface 10s towards the electrode 21 to an inclination in the fourth portion 34 that moves away from the surface 10s towards the electrode 21, as described later. In other words, the third bend 43 is bent in a manner that guides the fourth portion 34 towards the surface 20s.

[0071] The fourth portion 34 extends obliquely away from the surface by 10 seconds as it moves toward the electrode 21, connecting the first portion 31 to the first bend 41. Here, the first bend 41 is located on the electrode 21 side by the amount of the length of the fourth portion 34, so that the first bend 41 is located closer to the electrode 21 than the center in the extension direction of the wire 30. However, the first bend 41 may also be located at the center in the extension direction of the wire 30, or closer to the electrode 13 than that center, depending on the length of the fourth portion 34.

[0072] In this example, the tilting direction of the wire 30 does not change before and after the first bend 41 (i.e., the fourth part 34 and the second part 32). That is, here, the first bend 41 is bent in a way that maintains the tilt of the fourth part 34 in the second part 32, moving away from the surface 10s as it moves toward the electrode 21, and protrudes toward the surface 10s side.

[0073] According to the second variation above, since the height T of the semiconductor chip 20 from the surface is ensured by at least the second part 32 and the fourth part 34, the sharp bending that easily leads to stress concentration is not required. Therefore, the reduction in reliability can be further reliably suppressed.

[0074] [3rd Variation]

[0075] Figure 8 This is a diagram showing the semiconductor element of the third variation. Figure 8 (a) is a schematic cross-sectional view. Figure 8 (b) is an enlarged photograph. Figure 8 In the example shown, the bending angle of the bent portion 31b of the first part 31 is compared to Figure 1 The example is enlarged. More specifically, the curved portion 31b is bent at a right angle in such a way that the base end portion 31a, which extends perpendicularly to the surface 10s, is connected to the front end portion 31c, which extends parallel to the surface 10s.

[0076] According to this third modification, the first part 31 extends from the electrode 13 along the surface 10s, which can further reduce the amount of resin trapped in the wire 30. That is, the stress applied to the wire 30 can be reliably reduced, and the reduction in reliability can be reliably suppressed.

[0077] Furthermore, in the semiconductor element 1 described above, an example was given where a bonding portion 52 is provided on the surface 20s of the semiconductor chip 20, and a wire 30 is bonded to this bonding portion 52. Such a bonding portion 52, for example, can be provided with the same material as the wire 30 before the wire 30 is attached, as described above. However, in the semiconductor element 1, the bonding portion 52 is not mandatory, and the wire 30 can also be directly bonded to the semiconductor chip 20. Additionally, even when the bonding portion 52 is provided, it can be provided separately using a device different from the wire bonding device for the wire 30.

[0078] Furthermore, the positions of the junctions 51 and 52 in the semiconductor element 1 can be arbitrarily set. Therefore, the tilt of the wire 30 relative to the outer edge 20e of the semiconductor chip 20 can also be arbitrarily set according to the positional relationship of the junctions 51 and 52 (electrodes 13 and 21) when viewed from the second direction.

[0079] [Industry availability]

[0080] This invention provides a semiconductor device that can suppress reliability degradation and a method for manufacturing the semiconductor device.

[0081] Symbol Explanation

[0082] 1… Semiconductor element, 10… Mounting substrate, 10s… Surface (first side), 13… Electrode (first junction point), 20… Semiconductor chip, 20s… Surface (second side), 21… Electrode (second junction point), 30… Wire, 31… First part, 32… Second part, 33… Third part, 34… Fourth part, 41… First bend, 42… Second bend, 51… Junction, 52… Junction.

Claims

1. A semiconductor element, wherein provided with: a mounting substrate having a first surface; a semiconductor chip mounted on the first surface, having a second surface facing an opposite side of the first surface; and a wire extending from a first joining point on the first surface toward a second joining point on the second surface, electrically connecting the mounting substrate and the semiconductor chip by connecting the first joining point and the second joining point, the wire includes: a first portion, a first bent portion, a second portion, a second bent portion, and a third portion arranged in this order from the first joining point toward the second joining point, the first portion is located on the first surface side than the second surface, as viewed in a first direction along the first surface and the second surface, the first bent portion is located on the first surface side than the second surface, as viewed in the first direction, and is bent in a manner of guiding the second portion to the second surface side, the second portion extends toward the opposite side of the first surface beyond the second surface, as viewed in the first direction, the second bent portion is bent in a manner of guiding the third portion to the second surface side, the third portion extends from a position beyond the second surface toward the second surface on the opposite side of the first surface, as viewed in the first direction, and is joined to the second joining point, the second joining point is disposed at a position farther from a center of the semiconductor chip than the first joining point, in a direction intersecting the direction in which the semiconductor chip and the first joining point are arranged along the first surface and the second surface, the wire extends obliquely with respect to an outer edge of the semiconductor chip, as viewed in a second direction intersecting the second surface.

2. The semiconductor element according to claim 1, wherein the first bent portion is located on the first joining point side than a center in an extending direction of the wire.

3. The semiconductor element according to claim 1, wherein the first bent portion is located on the second joining point side than a center in an extending direction of the wire.

4. The semiconductor element according to any one of claims 1 to 3, wherein the wire includes: a fourth portion extending in a manner of connecting the first portion and the first bent portion.

5. A semiconductor element manufacturing method, wherein is a method for manufacturing the semiconductor element according to any one of claims 1 to 4, provided with: a first step of preparing the mounting substrate, the semiconductor chip mounted on the first surface of the mounting substrate, and at least a mother material for the wire; a second step of, after the first step, moving a soldering pin holding the mother material to the first joining point, and joining a tip of the mother material protruding from the soldering pin to the first joining point; a third step of, after the second step, moving the soldering pin while drawing the mother material from the soldering pin, and forming at least the first portion, the first bent portion, the second portion, the second bent portion, and the third portion arranged in this order; and a fourth step of, after the third step, moving the soldering pin while drawing the mother material from the soldering pin, and forming at least the fourth portion extending in a manner of connecting the first portion and the first bent portion. A fourth step of joining the base material to the second joining point to form the lead wire extending from the first joining point to the second joining point by moving the soldering pin to the second joining point after the third step.

6. The method according to claim 5, wherein The method further includes a fifth step of forming a joining portion at the second joining point by cutting a tip of the base material protruding from the soldering pin after joining the tip to the second joining point by moving the soldering pin to the second joining point after the first step and before the second step. In the fourth step, the base material is joined to the second joining point via the joining portion.

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