Over-temperature testing method, system and usage method of an intelligent power switch

Abstract

To solve the technical problems that in the current over-temperature protection test of intelligent power switches, the method of using a high-temperature oven to simulate a high-temperature environment is complex, time-consuming, low in accuracy, and unable to test each intelligent power switch, the present invention provides an over-temperature test method, system and usage method for intelligent power switches. First, a load is applied to the intelligent power switch to be tested and heated continuously to cause over-temperature protection of the intelligent power switch to be tested. When over-temperature protection occurs, a voltage is applied to the positive electrode of the body diode, and the clamping voltage of the body diode is detected. Then the load is restored, and the clamping voltage of the body diode after the over-temperature protection is restored is detected. Then, based on the clamping voltages during over-temperature protection and after the over-temperature protection is restored, combined with the temperature characteristic curve of the body diode, the protection temperature of the over-temperature protection and the recovery temperature of the over-temperature protection are calculated.

Description

Technical Field

[0001] The present invention belongs to an over-temperature testing method, and particularly relates to an over-temperature testing method and system for an intelligent power switch and a usage method thereof. Background Art

[0002] When an intelligent power switch is working, heat will be generated. In order to prevent the intelligent power switch from being damaged due to excessive temperature during normal operation, an over-temperature protection (OTP) circuit is designed inside the intelligent power switch. The function of the over-temperature protection circuit is to turn off the intelligent power switch when the temperature of the intelligent power switch rises to a pre-set temperature, so that the intelligent power switch no longer continues to work and generate heat.

[0003] Currently, during the manufacturing process of a chip, it is necessary to detect and calibrate the over-temperature protection circuit therein so that the over-temperature protection circuit can work at a set temperature value. In the traditional over-temperature protection (OTP) test of an intelligent power switch, in order to verify whether the over-temperature protection circuit can work properly, the intelligent power switch needs to be baked in a high-temperature oven to simulate a high-temperature environment. During the verification, the temperature of the oven is gradually increased, and it is observed whether the intelligent power switch can enter the over-temperature protection mode at high temperature. However, this testing method is relatively complex, has a long testing time, low accuracy, and cannot test the over-temperature protection function of each intelligent power switch. Summary of the Invention

[0004] In order to solve the technical problems that when performing the over-temperature protection test of an intelligent power switch currently, the method of using a high-temperature oven to simulate a high-temperature environment is complex, has a long testing time, low accuracy, and cannot test each intelligent power switch, the present invention provides an over-temperature testing method and system for an intelligent power switch and a usage method thereof.

[0005] To achieve the above object, the present invention adopts the following technical solutions:

[0006] An over-temperature testing method for an intelligent power switch, characterized in that it includes the following steps:

[0007] S1, testing and obtaining the temperature characteristic curve of the body diode of the intelligent power switch to be tested;

[0008] S2, providing a supply voltage to the intelligent power switch to be tested, applying a load to the intelligent power switch to be tested, and continuously heating the intelligent power switch to be tested while detecting the output voltage of the intelligent power switch to be tested until the output voltage of the intelligent power switch to be tested is 0;

[0009] S3. Stop heating, disconnect the load applied to the intelligent power switch under test, and set the supply voltage of the intelligent power switch under test to 0. Apply a voltage to the anode of the body diode of the intelligent power switch under test, and detect the clamping voltage u1 of the body diode of the intelligent power switch under test.

[0010] S4. Apply a load to the intelligent power switch under test, restore the supply voltage of the intelligent power switch under test, and detect the output voltage of the intelligent power switch under test. When the output voltage of the intelligent power switch under test is greater than 0, disconnect the load applied to the intelligent power switch under test, and set the supply voltage of the intelligent power switch under test to 0. Apply a voltage to the anode of the body diode of the intelligent power switch under test, and detect the clamping voltage u2 of the body diode of the intelligent power switch under test.

[0011] S5. Test and obtain the temperature characteristic curve of the body diode of the intelligent power switch under test. Based on the temperature characteristic curve of the body diode of the intelligent power switch under test, combined with the clamping voltage u1 and the clamping voltage u2, obtain the temperature value t corresponding to the clamping voltage u1 x and the temperature value t corresponding to the clamping voltage u2 y , and use the temperature value t x as the protection temperature for over-temperature protection of the intelligent power switch under test, and the temperature value t y as the recovery temperature for over-temperature protection of the intelligent power switch under test.

[0012] Further, step S5 is specifically as follows:

[0013] S5.1. Take four points on the temperature characteristic curve of the body diode of the intelligent power switch under test, and obtain the corresponding abscissa temperature values and ordinate clamping voltage values of these four points. The temperature values of the four points are respectively denoted as t1, t2, t3, and t4, and the clamping voltage values of the four points are respectively denoted as v1, v2, v3, and v4. Among them, t1 and t3 are less than the protection temperature for over-temperature protection of the intelligent power switch under test, t2 and t4 are greater than the protection temperature for over-temperature protection of the intelligent power switch under test, t1 < t2, and t3 < t4;

[0014] S5.2. Obtain t x and t y respectively through formula (1) and formula (2):

[0015]

[0016]

[0017] Further, step S5 can also adopt the following specific method:

[0018] S5.1, take two points on the temperature characteristic curve of the body diode of the intelligent power switch to be tested, and obtain the abscissa temperature value and the ordinate clamping voltage value corresponding to the two points, the temperature values ​​of the two points are respectively recorded as t5 and t6, and the clamping voltage values ​​of the two points are respectively recorded as v5 and v6; wherein t5 is less than the protection temperature of the over-temperature protection of the intelligent power switch to be tested, t6 is greater than the protection temperature of the over-temperature protection of the intelligent power switch to be tested, and t5<t6;

[0019] S5.2, t is obtained by equation (3) and equation (4) respectively. x and t y :

[0020]

[0021]

[0022] The present invention also provides an over-temperature test system for an intelligent power switch, which is used to implement the above-mentioned over-temperature test method for an intelligent power switch, and the special feature thereof is that it includes a power device tester, a heating temperature acquisition module and an adjustable load;

[0023] The power device tester is connected to the heating temperature acquisition module and the adjustable load respectively, and the power device tester, the heating temperature acquisition module and the adjustable load are all connected to the intelligent power switch to be tested;

[0024] The power device tester is used to control the working state of the heating temperature acquisition module and the adjustable load, and to collect the heating temperature of the heating temperature acquisition module and the load condition of the adjustable load, and to analyze and obtain the protection temperature and recovery temperature of the over-temperature protection of the intelligent power switch to be tested based on the collected data and the temperature characteristic curve of the body diode of the intelligent power switch to be tested; and to collect the output voltage of the intelligent power switch to be tested and the clamping voltage of the body diode of the intelligent power switch to be tested;

[0025] The adjustable load is used to apply a corresponding load to the intelligent power switch to be tested according to the control of the power device tester;

[0026] The heating temperature acquisition module is provided with a temperature sensor for heating the intelligent power switch to be tested according to the control of the power device tester, and collecting the actual output temperature to feed back to the power device tester.

[0027] Furthermore, the power device tester analyzes and obtains the protection temperature and recovery temperature of the over-temperature protection of the intelligent power switch to be tested through equations (5) and (6) respectively:

[0028]

[0029]

[0030] t1, t2, t3, and t4 respectively represent the temperature values corresponding to four points on the temperature characteristic curve of the body diode of the intelligent power switch (4) to be tested, and v1, v2, v3, and v4 respectively represent the clamping voltage values corresponding to four points on the temperature characteristic curve of the body diode of the intelligent power switch (4) to be tested; among them, t1 and t3 are less than the protection temperature of the over-temperature protection of the intelligent power switch to be tested, t2 and t4 are greater than the protection temperature of the over-temperature protection of the intelligent power switch to be tested, t1 < t2, and t3 < t4.

[0031] Furthermore, the power device tester respectively analyzes and obtains the protection temperature and recovery temperature of the over-temperature protection of the intelligent power switch to be tested through formulas (7) and (8):

[0032]

[0033]

[0034] t5 and t6 respectively represent the temperature values corresponding to two points on the temperature characteristic curve of the body diode of the intelligent power switch to be tested, and v5 and v6 respectively represent the clamping voltage values corresponding to two points on the temperature characteristic curve of the body diode of the intelligent power switch to be tested; among them, t5 is less than the protection temperature of the over-temperature protection of the intelligent power switch to be tested, t6 is greater than the protection temperature of the over-temperature protection of the intelligent power switch to be tested, and t5 < t6.

[0035] Furthermore, the power device tester and the intelligent power switch to be tested are connected by two output lines and two acquisition lines, and an ADC acquisition module is provided in the power device tester;

[0036] One end of one of the acquisition lines is connected to the ADC acquisition module, and the other end is connected to the power supply voltage terminal of the intelligent power switch to be tested; one end of the other acquisition line is connected to the ADC acquisition module, and the other end is connected to the output voltage terminal of the intelligent power switch to be tested;

[0037] One end of each of the two output lines is connected to the power device tester, and the other ends are respectively connected to the power supply voltage terminal and the output voltage terminal of the intelligent power switch to be tested.

[0038] Furthermore, a display module is provided in the power device tester for displaying the real-time temperature collected by the temperature sensor.

[0039] In addition, the present invention also provides a method for using an over-temperature test system for an intelligent power switch as described above, which is characterized in that it includes the following steps:

[0040] S1, testing and obtaining the temperature characteristic curve of the body diode of the intelligent power switch to be tested;

[0041] S2, causing the intelligent power switch to be tested to reach over-temperature protection

[0042] The power device tester sends working instructions to the heating temperature acquisition module and the adjustable load respectively, so that the adjustable load applies corresponding loads to the intelligent power switch to be tested, and the heating temperature acquisition module continuously heats up the intelligent power switch to be tested. At the same time, the power device tester detects the output voltage of the intelligent power switch to be tested until the output voltage of the intelligent power switch to be tested is 0, reaching over-temperature protection;

[0043] S3. Detect the clamping voltage u1 of the body diode under over-temperature protection of the intelligent power switch to be tested

[0044] The power device tester controls the heating temperature acquisition module to stop heating, and controls the adjustable load to disconnect the load applied to the intelligent power switch to be tested. At the same time, the power device tester controls the supply voltage of the intelligent power switch to be tested to be 0, applies a voltage to the positive electrode of the body diode of the intelligent power switch to be tested, and detects the clamping voltage u1 of the body diode of the intelligent power switch to be tested;

[0045] S4. Detect the clamping voltage u2 of the body diode under the recovery of over-temperature protection of the intelligent power switch to be tested

[0046] The power device tester controls the adjustable load to apply a load to the intelligent power switch to be tested, restores the supply voltage of the intelligent power switch to be tested, and the power device tester detects the output voltage of the intelligent power switch to be tested. When the output voltage of the intelligent power switch to be tested is greater than 0, the load applied to the intelligent power switch to be tested is disconnected, and the supply voltage of the intelligent power switch to be tested is set to 0. A voltage is applied to the positive electrode of the body diode of the intelligent power switch to be tested, and the clamping voltage u2 of the body diode of the intelligent power switch to be tested is detected;

[0047] S5. Obtain the protection temperature of over-temperature protection and the recovery temperature of over-temperature protection of the intelligent power switch to be tested

[0048] The power device tester obtains the temperature value t corresponding to the clamping voltage u1 and the temperature value t corresponding to the clamping voltage u2 according to the temperature characteristic curve of the body diode of the intelligent power switch to be tested, combined with the clamping voltage u1 and the clamping voltage u2 x and the temperature value t corresponding to the clamping voltage u2 y , taking the temperature value t x as the protection temperature of over-temperature protection of the intelligent power switch to be tested, and the temperature value t y as the recovery temperature of over-temperature protection of the intelligent power switch to be tested.

[0049] Furthermore, step S5 is specifically:

[0050] S5.1. The power device tester takes four points on the temperature characteristic curve of the body diode of the intelligent power switch to be tested, obtaining the abscissa temperature values and ordinate clamping voltage values corresponding to these four points. The temperature values of the four points are respectively denoted as t1, t2, t3, and t4, and the clamping voltage values of the four points are respectively denoted as v1, v2, v3, and v4;

[0051] S5.2. The power device tester respectively obtains t x and t y :

[0052]

[0053]

[0054] Alternatively, the power device tester respectively obtains t x and t y :

[0055]

[0056]

[0057] Compared with the prior art, the present invention has the following beneficial effects:

[0058] 1. The present invention provides an over-temperature testing method for an intelligent power switch. First, a load is applied to the intelligent power switch to be tested and heated continuously to cause over-temperature protection of the intelligent power switch to be tested. When over-temperature protection occurs, a voltage is applied to the positive electrode of the body diode, and the clamping voltage of the body diode is detected. Then, the load is restored, and the clamping voltage of the body diode after the over-temperature protection is restored is detected. Then, according to the clamping voltages during over-temperature protection and after the over-temperature protection is restored, the protection temperature of the over-temperature protection and the recovery temperature of the over-temperature protection are calculated. The operation is more convenient. Compared with the method of heating the intelligent power switch to be tested in an oven for testing, the testing time is shortened. In addition, since heating is carried out in an oven, it is impossible to directly and accurately obtain the over-temperature protection and over-temperature protection recovery nodes, so the testing accuracy is relatively low, while the testing method of the present invention has higher accuracy.

[0059] 2. In the over-temperature testing method of the intelligent power switch of the present invention, when detecting the clamping voltage of the body diode during the testing process, the testing is carried out under the condition that the intelligent power switch to be tested is not powered on. In the prior art, when testing in an oven, it is necessary to place the intelligent power switch to be tested in the oven in a powered-on state. Therefore, the over-temperature testing method in the present invention has higher safety and will not cause safety problems due to short circuits during testing, greatly reducing the possibility of damage to the intelligent power switch to be tested during testing.

[0060] 3. When calculating the protection temperature of overtemperature protection and the recovery temperature of overtemperature protection in the present invention, by virtue of the temperature characteristic curve of the body diode, since this temperature characteristic curve is obtained through testing based on the actual working conditions of the body diode, during the overtemperature protection test, compared with the method of manually observing the test results in the prior art, the accuracy is higher, the test results are more consistent with the actual situation of the intelligent power switch to be tested, and the protection temperature of overtemperature protection and the recovery temperature of overtemperature protection can be obtained quickly and accurately.

[0061] 4. To implement the above test method, the present invention also proposes a test system capable of implementing the above overtemperature test method. The test can be achieved through a power device tester, a heating temperature acquisition module, and an adjustable load. The overall structure of the system is relatively simple, and at the same time, fast and accurate testing can also be achieved.

[0062] 5. In the present invention, two output lines and two acquisition lines are provided between the power device tester and the intelligent power switch to be tested. Through the acquisition lines and the ADC acquisition module in the power device tester, the output voltage of the intelligent power switch to be tested can be acquired. Through the output lines, a voltage can be applied to the positive electrode of the body diode, and the test function of the above test method is realized through a simple structural method.

[0063] 6. The present invention also provides a usage method of the above test system. Through the cooperation of the components in the above test system, the test method of the present invention is realized. BRIEF DESCRIPTION OF THE DRAWINGS

[0064] Figure 1 It is a schematic diagram of an embodiment of an overtemperature test system for an intelligent power switch of the present invention;

[0065] Figure 2 It is a schematic connection diagram between a power device tester and an intelligent power switch to be tested in an embodiment of an overtemperature test system for an intelligent power switch of the present invention;

[0066] Figure 3 It is a schematic flow diagram of an overtemperature test method for an intelligent power switch of the present invention.

[0067] Wherein: 1 - power device tester, 2 - heating temperature acquisition module, 3 - adjustable load, 4 - intelligent power switch to be tested. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0068] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. Usually, the components of the embodiments of the present invention described and illustrated herein can be arranged and designed in various different configurations.

[0069] To overcome the deficiencies in the prior art, the present invention provides an over-temperature testing method, system and usage method for an intelligent power switch, which is simple and convenient to operate, can effectively shorten the testing time, and at the same time, can improve the accuracy of the test results.

[0070] As Figure 3 shown, the present invention provides an over-temperature testing method for an intelligent power switch, which specifically includes the following steps:

[0071] (1) Test and obtain the temperature characteristic curve of the body diode of the intelligent power switch to be tested.

[0072] The specific testing method for testing and obtaining the temperature characteristic curve of the body diode of the intelligent power switch 4 to be tested is: place the intelligent power switch 4 to be tested in a heating device, while adjusting the heating temperature, detect the clamping voltage of the body diode in the intelligent power switch 4 through a voltage testing device, and then the temperature characteristic curve of the body diode with temperature as the abscissa and clamping voltage as the ordinate can be obtained.

[0073] Testing and obtaining the temperature characteristic curve of the body diode of the intelligent power switch to be tested is a preparatory work before the formal start of the subsequent over-temperature test. Different from the test environment of the subsequent steps, it is a relatively independent test process.

[0074] (2) Apply a load to the intelligent power switch 4 to be tested. According to the type of the intelligent power switch 4 to be tested, select a suitable corresponding load type. On the premise of applying the load, continuously heat up the intelligent power switch 4 to be tested, and at the same time, detect the output voltage of the intelligent power switch 4 until the output voltage of the intelligent power switch 4 is 0. When the output voltage of the intelligent power switch 4 is 0, it means that the intelligent power switch 4 enters the over-temperature protection state.

[0075] (3) Stop heating, disconnect the load applied to the intelligent power switch to be tested, and make the supply voltage of the intelligent power switch 4 be 0. Apply a voltage to the positive electrode of the body diode of the intelligent power switch 4, and detect the clamping voltage u1 of the body diode of the intelligent power switch 4.

[0076] (4) Apply a load to the intelligent power switch 4 to be tested, restore the supply voltage of the intelligent power switch 4, detect the output voltage of the intelligent power switch 4. When the output voltage of the intelligent power switch 4 is greater than 0, disconnect the load applied to the intelligent power switch 4, and make the supply voltage of the intelligent power switch 4 be 0. Apply a voltage to the positive electrode of the body diode of the intelligent power switch 4, and detect the clamping voltage u2 of the body diode of the intelligent power switch 4.

[0077] (5) Test to obtain the temperature characteristic curve of the body diode of the intelligent power switch 4 to be tested. According to the temperature characteristic curve of the body diode of the intelligent power switch 4 to be tested, combined with the clamping voltage u1 and the clamping voltage u2, respectively through the following formulas (1) and (2):

[0078]

[0079]

[0080] The temperature value t corresponding to the clamping voltage u1 can be obtained x and the temperature value t corresponding to the clamping voltage u2 y , where the temperature value t x is the protection temperature of the over-temperature protection of the intelligent power switch 4 to be tested, and the temperature value t y is the recovery temperature of the over-temperature protection of the intelligent power switch 4 to be tested. Among them, t1, t2, t3, and t4, as well as v1, v2, v3, and v4, are four points taken on the temperature characteristic curve of the body diode of the intelligent power switch 4 to be tested, and the abscissa and ordinate corresponding to each point are obtained. Since the abscissa of the temperature characteristic curve of the body diode represents temperature and the ordinate represents the clamping voltage, t1, t2, t3, and t4 respectively represent the temperature values corresponding to the four points, and v1, v2, v3, and v4 respectively represent the clamping voltages corresponding to the four points.

[0081] Here, four points (t1, v1), (t2, v2), (t3, v3), and (t4, v4) can be taken on the temperature characteristic curve of the diode, or two sets of the same points can be taken when calculating the temperature value t x and the temperature value t y . Whether taking four points or two sets of the same points, when calculating the temperature value t x and when calculating the temperature value t y , the temperature value corresponding to a point taken on the temperature characteristic curve is less than the protection temperature of the over-temperature protection of the intelligent power switch 4 to be tested. For the convenience of testing, generally a point corresponding to the room temperature can be taken on the temperature characteristic curve of the diode. Here, the room temperature generally refers to 20 - 25 °C, and the temperature value corresponding to the other point is greater than the protection temperature of the over-temperature protection of the intelligent power switch 4 to be tested. For example, the temperature value can generally be taken as 170 - 180 °C.

[0082] The protection temperature of the over-temperature protection and the recovery temperature of the over-temperature protection can be achieved through the above relatively simple method, with convenient operation and accurate test results.

[0083] Such as Figure 1As shown, in order to implement the above test method, the present invention also provides a test system capable of implementing the above test method, including a power device tester 1, a heating temperature acquisition module 2, and an adjustable load 3. When conducting a test, the following method can be specifically adopted for the test:

[0084] S1. The power device tester 1 sends working instructions to the heating temperature acquisition module 2 and the adjustable load 3 respectively, so that the adjustable load 3 applies a corresponding load to the intelligent power switch 4 to be tested, and the heating temperature acquisition module 2 continuously heats up the intelligent power switch 4 to be tested. At the same time, the power device tester 1 detects the output voltage of the intelligent power switch 4 to be tested until the output voltage of the intelligent power switch 4 to be tested is 0, reaching over-temperature protection. When heating the intelligent power switch 4 to be tested through the heating temperature acquisition module 2, specifically, the heating temperature acquisition module 2 can include a heating sheet and a core control part. The heating sheet is attached to the intelligent power switch 4 to be tested, and the core control part controls the heating sheet to heat the intelligent power switch 4 to be tested. In addition, a temperature sensor and a corresponding display module can also be set in the power device tester 1. While the heating temperature acquisition module 2 heats the intelligent power switch 4 to be tested, the real output temperature is collected through the temperature sensor and fed back to the power device tester 1. The power device tester 1 can display the real-time temperature collected by the temperature sensor through the display module to form a corresponding temperature curve. In addition, a maximum allowable heating temperature can also be set in the power device tester 1 to judge whether the temperature fed back by the temperature sensor exceeds the threshold value.

[0085] S2. The power device tester 1 controls the heating temperature acquisition module 2 to stop heating, controls the adjustable load 3 to disconnect the load applied to the intelligent power switch 4 to be tested, and at the same time, the power device tester 1 controls the supply voltage of the intelligent power switch 4 to be tested to be 0, applies a voltage to the anode of the body diode of the intelligent power switch 4 to be tested, and detects the clamping voltage u1 of the body diode of the intelligent power switch 4 to be tested; among them, when applying the voltage, as long as it does not exceed the safety limit of the diode.

[0086] Detecting the clamping voltage of the body diode of the intelligent power switch 4 to be tested, and applying a voltage to the anode of the body diode of the intelligent power switch 4 to be tested can be specifically adopted Figure 2The method shown is as follows: The power device tester 1 and the intelligent power switch 4 to be tested are connected by two output lines and two acquisition lines. An ADC acquisition module is also provided in the power device tester 1. One end of one acquisition line is connected to the ADC acquisition module, and the other end is connected to the power supply voltage terminal of the intelligent power switch 4 to be tested; one end of the other acquisition line is connected to the ADC acquisition module, and the other end is connected to the output voltage terminal of the intelligent power switch 4 to be tested. When it is necessary to detect the clamping voltage of the body diode of the intelligent power switch 4 to be tested, it can be detected through the two acquisition lines, and the clamping voltage can be obtained according to the ADC acquisition module in the power device tester 1. Figure 2 In this, F represents the output line, and S represents the acquisition line. The intelligent power switch 4 to be tested in this embodiment generally refers to an intelligent power switch with a fast switching function, and a body diode is provided inside each of them.

[0087] In addition, one end of the two output lines is connected to the power device tester 1, and the other ends are respectively connected to the power supply voltage terminal Vbb and the output voltage terminal Vout of the intelligent power switch 4 to be tested, for applying a voltage to the positive electrode of the body diode of the intelligent power switch (4).

[0088] S3. Control the adjustable load 3 through the power device tester 1 to apply a load to the intelligent power switch 4 to be tested, restore the power supply voltage of the intelligent power switch 4 to be tested, detect the output voltage of the intelligent power switch 4 to be tested through the power device tester 1. When the output voltage of the intelligent power switch 4 to be tested is greater than 0, disconnect the load applied to the intelligent power switch 4 to be tested, and make the power supply voltage of the intelligent power switch 4 to be tested 0, apply a voltage to the positive electrode of the body diode of the intelligent power switch 4 to be tested, and detect the clamping voltage u2 of the body diode of the intelligent power switch 4 to be tested.

[0089] The method and steps for detecting the clamping voltage of the body diode of the intelligent power switch 4 to be tested and applying a voltage to the positive electrode of the body diode of the intelligent power switch 4 to be tested are the same as those in step S3.

[0090] S4. Respectively, through the following formulas (3) and (4), obtain the temperature value t corresponding to the clamping voltage u1 x and the temperature value t corresponding to the clamping voltage u2 y :

[0091]

[0092]

[0093] Here, similar to the foregoing method, four points (t1, v1), (t2, v2), (t3, v3), and (t4, v4) can be taken on the temperature characteristic curve of the diode, or two sets of the same points can be taken when calculating the temperature value t x and the temperature value t y at that time.

[0094] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A method for over-temperature testing of an intelligent power switch, characterized in that, Including the following steps: S1. Test and obtain the temperature characteristic curve of the body diode of the intelligent power switch (4) to be measured; S2. Provide a supply voltage to the intelligent power switch (4) to be measured, apply a load to the intelligent power switch (4) to be measured, and continuously heat up the intelligent power switch (4) to be measured. At the same time, detect the output voltage of the intelligent power switch (4) to be measured until the output voltage of the intelligent power switch (4) to be measured is 0; S3. Stop heating, disconnect the load applied to the intelligent power switch (4) to be measured, and make the supply voltage of the intelligent power switch (4) to be measured 0. Apply a voltage to the positive electrode of the body diode of the intelligent power switch (4) to be measured, and detect the clamping voltage u1 of the body diode of the intelligent power switch (4) to be measured; S4. Apply a load to the intelligent power switch (4) to be measured, restore the supply voltage of the intelligent power switch (4) to be measured, and detect the output voltage of the intelligent power switch (4) to be measured. When the output voltage of the intelligent power switch (4) to be measured is greater than 0, disconnect the load applied to the intelligent power switch (4) to be measured, and make the supply voltage of the intelligent power switch (4) to be measured 0. Apply a voltage to the positive electrode of the body diode of the intelligent power switch (4) to be measured, and detect the clamping voltage u2 of the body diode of the intelligent power switch (4) to be measured; S5. According to the temperature characteristic curve of the body diode of the intelligent power switch (4) to be measured, combined with the clamping voltage u1 and the clamping voltage u2, obtain the temperature value t corresponding to the clamping voltage u1 x and the temperature value t corresponding to the clamping voltage u2 y . Using the temperature value t x as the protection temperature for over-temperature protection of the intelligent power switch (4) to be measured, and using the temperature value t y as the recovery temperature for over-temperature protection of the intelligent power switch (4) to be measured.

2. The method for over-temperature testing of an intelligent power switch according to claim 1, characterized in that, Step S5 is specifically as follows: S5.

1. Take four points on the temperature characteristic curve of the body diode of the intelligent power switch (4) to be measured, and obtain the corresponding abscissa temperature values and ordinate clamping voltage values of these four points. The temperature values of the four points are respectively denoted as t1, t2, t3, and t4, and the clamping voltage values of the four points are respectively denoted as v1, v2, v3, and v4. Among them, t1 and t3 are less than the protection temperature of the over-temperature protection of the intelligent power switch (4) to be measured, t2 and t4 are greater than the protection temperature of the over-temperature protection of the intelligent power switch (4) to be measured, t1 < t2, and t3 < t4; S5.2, obtain t and t respectively through formula (1) and formula (2): x and t y :[[]]END]] 3. The method for over-temperature testing of an intelligent power switch according to claim 1, characterized in that, Step S5 is specifically as follows: S5.

1. Take two points on the temperature characteristic curve of the body diode of the intelligent power switch (4) to be measured, and obtain the corresponding abscissa temperature values and ordinate clamping voltage values of these two points. The temperature values of the two points are respectively denoted as t5 and t6, and the clamping voltage values of the two points are respectively denoted as v5 and v6. Among them, t5 is less than the protection temperature of the over-temperature protection of the intelligent power switch (4) to be measured, t6 is greater than the protection temperature of the over-temperature protection of the intelligent power switch (4) to be measured, and t5 < t6; S5.2, obtain t and t respectively through formula (3) and formula (4): x and t y :

4. An over-temperature testing system for an intelligent power switch, used to implement the method for over-temperature testing of an intelligent power switch according to any one of claims 1 to 3, characterized in that: Including a power device tester (1), a heating temperature acquisition module (2), and an adjustable load (3); The power device tester (1) is respectively connected to the heating temperature acquisition module (2) and the adjustable load (3), and the power device tester (1), the heating temperature acquisition module (2), and the adjustable load (3) are all connected to the intelligent power switch (4) to be measured; The power device tester (1) is used to control the working states of the heating temperature acquisition module (2) and the adjustable load (3), collect the heating temperature of the heating temperature acquisition module (2) and the load condition of the adjustable load (3), and analyze the protection temperature and recovery temperature of the over-temperature protection of the intelligent power switch (4) to be tested according to the collected data in combination with the temperature characteristic curve of the body diode of the intelligent power switch (4) to be tested; and collect the output voltage of the intelligent power switch (4) to be tested and the clamping voltage of the body diode of the intelligent power switch (4) to be tested. The adjustable load (3) is used to apply a corresponding load to the intelligent power switch (4) to be tested according to the control of the power device tester (1). A temperature sensor is provided in the heating temperature acquisition module (2), which is used to heat the intelligent power switch (4) to be tested according to the control of the power device tester (1) and collect the actual output temperature and feedback it to the power device tester (1).

5. The over-temperature testing system for an intelligent power switch according to claim 4, characterized in that: The power device tester (1) analyzes the protection temperature and recovery temperature of the over-temperature protection of the intelligent power switch (4) to be tested respectively through formulas (5) and (6): t1, t2, t3, and t4 respectively represent the temperature values corresponding to four points on the temperature characteristic curve of the body diode of the intelligent power switch (4) to be tested, and v1, v2, v3, and v4 respectively represent the clamping voltage values corresponding to four points on the temperature characteristic curve of the body diode of the intelligent power switch (4) to be tested; among them, t1 and t3 are less than the protection temperature of the over-temperature protection of the intelligent power switch (4) to be tested, t2 and t4 are greater than the protection temperature of the over-temperature protection of the intelligent power switch (4) to be tested, t1 < t2, and t3 < t4.

6. The over-temperature testing system for an intelligent power switch according to claim 4, characterized in that: The power device tester (1) analyzes the protection temperature and recovery temperature of the over-temperature protection of the intelligent power switch (4) to be tested respectively through formulas (7) and (8): t5 and t6 respectively represent the temperature values corresponding to two points on the temperature characteristic curve of the body diode of the intelligent power switch (4) to be tested, and v5 and v6 respectively represent the clamping voltage values corresponding to two points on the temperature characteristic curve of the body diode of the intelligent power switch (4) to be tested. Among them, t5 is less than the protection temperature of the over-temperature protection of the intelligent power switch (4) to be tested, t6 is greater than the protection temperature of the over-temperature protection of the intelligent power switch (4) to be tested, and t5 < t6.

7. The over-temperature test system for an intelligent power switch according to any one of claims 4 to 6, characterized in that: The power device tester (1) and the intelligent power switch (4) to be tested are connected by two output lines and two acquisition lines, and an ADC acquisition module is provided in the power device tester (1). One end of one of the acquisition lines is connected to the ADC acquisition module, and the other end is connected to the power supply voltage terminal of the intelligent power switch (4) to be tested; one end of the other acquisition line is connected to the ADC acquisition module, and the other end is connected to the output voltage terminal of the intelligent power switch (4) to be tested. One ends of the two output lines are both connected to the power device tester (1), and the other ends are respectively connected to the power supply voltage terminal and the output voltage terminal of the intelligent power switch (4) to be tested.

8. The over-temperature test system for an intelligent power switch according to claim 7, characterized in that: A display module is provided in the power device tester (1) for displaying the real-time temperature collected by the temperature sensor.

9. A method for using the over-temperature test system for an intelligent power switch according to any one of claims 4 to 8, characterized in that, Including the following steps: S1. Test and obtain the temperature characteristic curve of the body diode of the intelligent power switch (4) to be tested; S2. Cause the intelligent power switch (4) to be tested to reach over-temperature protection Send working instructions to the heating temperature acquisition module (2) and the adjustable load (3) respectively through the power device tester (1), so that the adjustable load (3) applies a corresponding load to the intelligent power switch (4) to be tested, and cause the heating temperature acquisition module (2) to continuously heat up the intelligent power switch (4) to be tested. At the same time, detect the output voltage of the intelligent power switch (4) to be tested through the power device tester (1) until the output voltage of the intelligent power switch (4) to be tested is 0, reaching over-temperature protection; S3. Detect the clamping voltage u1 of the body diode under over-temperature protection of the intelligent power switch (4) to be tested Control the heating temperature acquisition module (2) to stop heating through the power device tester (1), and control the adjustable load (3) to disconnect the load applied to the intelligent power switch (4) to be tested. At the same time, control the power supply voltage of the intelligent power switch (4) to be tested to be 0 through the power device tester (1), apply a voltage to the positive electrode of the body diode of the intelligent power switch (4) to be tested, and detect the clamping voltage u1 of the body diode of the intelligent power switch (4) to be tested; S4. Detect the clamping voltage u2 of the body diode when the over-temperature protection of the intelligent power switch (4) to be tested is restored Control the adjustable load (3) to apply a load to the intelligent power switch (4) to be tested through the power device tester (1), restore the power supply voltage of the intelligent power switch (4) to be tested, detect the output voltage of the intelligent power switch (4) to be tested through the power device tester (1). When the output voltage of the intelligent power switch (4) to be tested is greater than 0, disconnect the load applied to the intelligent power switch (4) to be tested, and make the power supply voltage of the intelligent power switch (4) to be tested 0, apply a voltage to the positive electrode of the body diode of the intelligent power switch (4) to be tested, and detect the clamping voltage u2 of the body diode of the intelligent power switch (4) to be tested; S5. Obtain the protection temperature of the over-temperature protection of the intelligent power switch (4) to be tested and the recovery temperature of the over-temperature protection The power device tester (1) obtains the temperature value t corresponding to the clamping voltage u1 and the temperature value t corresponding to the clamping voltage u2 according to the temperature characteristic curve of the body diode of the intelligent power switch (4) to be tested, in combination with the clamping voltage u1 and the clamping voltage u2. x and the temperature value t corresponding to the clamping voltage u2 y , taking the temperature value t x as the protection temperature for over-temperature protection of the intelligent power switch (4) to be tested, and the temperature value t y as the recovery temperature for over-temperature protection of the intelligent power switch (4) to be tested.

10. The method for using the over-temperature test system for an intelligent power switch according to claim 9, characterized in that, Step S5 is specifically as follows: S5.

1. The power device tester (1) takes four points on the temperature characteristic curve of the body diode of the intelligent power switch (4) to be tested, and obtains the corresponding abscissa temperature values and ordinate clamping voltage values of these four points. The temperature values of the four points are respectively denoted as t1, t2, t3, and t4, and the clamping voltage values of the four points are respectively denoted as v1, v2, v3, and v4; S5.2, the power device tester (1) obtains t respectively through formula (9) and formula (10) x and t y : t1, t2, t3, and t4 respectively represent the temperature values corresponding to four points on the temperature characteristic curve of the body diode of the intelligent power switch (4) to be tested, and v1, v2, v3, and v4 respectively represent the clamping voltage values corresponding to four points on the temperature characteristic curve of the body diode of the intelligent power switch (4) to be tested. Among them, t1 and t3 are less than the protection temperature of the over-temperature protection of the intelligent power switch (4) to be tested, t2 and t4 are greater than the protection temperature of the over-temperature protection of the intelligent power switch (4) to be tested, t1 < t2, and t3 < t4; Alternatively, the power device tester (1) obtains t and t respectively through equations (11) and (12): x and t y : t5 and t6 respectively represent the temperature values corresponding to two points on the temperature characteristic curve of the body diode of the intelligent power switch (4) to be measured, and v5 and v6 respectively represent the clamping voltage values corresponding to two points on the temperature characteristic curve of the body diode of the intelligent power switch (4) to be measured. Among them, t5 is less than the protection temperature of the over-temperature protection of the intelligent power switch (4) to be measured, t6 is greater than the protection temperature of the over-temperature protection of the intelligent power switch (4) to be measured, and t5 < t6.

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