Method of cleaning a cup of a substrate processing apparatus and substrate processing apparatus

Abstract

The cleaning method includes the following steps (A) to (B). Step (A), a substrate is horizontally held inside a cup-shaped body, and a first treatment liquid is supplied from a first nozzle to a central portion of an upper surface of the substrate, and a second treatment liquid is supplied from a second nozzle to a peripheral portion of the upper surface of the substrate, in a state where the substrate is rotated in a first direction about a vertical rotation axis. Step (B), during a process in which the second nozzle discharges the second treatment liquid, the second nozzle is moved in a radial direction of the substrate between a first position where a jet line of the second nozzle reaches the peripheral portion of the upper surface of the substrate and a second position where the jet line of the second nozzle deviates from the substrate.

Description

Technical Field

[0001] This invention relates to a method for cleaning the cup-shaped body of a substrate processing apparatus and to a substrate processing apparatus. Background Technology

[0002] The substrate processing apparatus described in Patent Document 1 includes: a rotary suction cup that holds a substrate horizontally and rotates a rotation axis around a center; a nozzle that supplies processing liquid to the upper surface of the substrate held by the rotary suction cup; and a cup-shaped body surrounding the rotary suction cup and catching the processing liquid that splashes from the substrate. The cup-shaped body has an inclined surface that expands radially downwards along the rotation axis. The substrate processing apparatus supplies cleaning liquid to the rotating rotary suction cup to cause it to splash, and supplies cleaning liquid to the inclined surface of the cup-shaped body.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2015-176996. Summary of the Invention

[0006] The problem the invention aims to solve

[0007] One aspect of the present invention provides a technique for expanding the cleaning range of the cup-shaped body of a substrate processing apparatus.

[0008] Technical means for solving problems

[0009] One aspect of the cleaning method of the present invention is a cleaning method for a cup-shaped body of a substrate processing apparatus. The substrate processing apparatus includes a holding part, a rotating part, a liquid supply unit, and a cup-shaped body. The holding part horizontally holds a substrate. The rotating part rotates the holding part about a vertical rotation axis. The liquid supply unit supplies liquid to the upper surface of the substrate held by the holding part. The cup-shaped body surrounds the periphery of the substrate held by the holding part and catches the liquid that spills from the periphery of the substrate. The cleaning method includes the following steps (A) to (B). In step (A), with the substrate horizontally held inside the cup-shaped body and the substrate rotated in a first direction about a vertical rotation axis, a first processing liquid is supplied from a first nozzle to the center of the upper surface of the substrate, and a second processing liquid is supplied from a second nozzle to the periphery of the upper surface of the substrate. Step (B): During the process of the second nozzle discharging the second treatment liquid, the second nozzle is moved radially on the substrate between a first position where the spray line of the second nozzle reaches the periphery of the upper surface of the substrate and a second position where the spray line of the second nozzle deviates from the substrate.

[0010] Invention Effects

[0011] According to one aspect of the present invention, the cleaning range of the cup-shaped body of the substrate processing apparatus can be expanded. Attached Figure Description

[0012] Figure 1 This is a cross-sectional view showing a substrate processing apparatus according to one embodiment.

[0013] Figure 2 This is a top view showing an example of the nozzle configuration of a liquid supply unit.

[0014] Figure 3 This is a top view showing an example of the spray line from the first liquid nozzle.

[0015] Figure 4 This diagram illustrates an example of supplying a first liquid to a substrate rotating in a first direction.

[0016] Figure 5 This diagram illustrates an example of supplying a first liquid to a substrate rotating in a second direction.

[0017] Figure 6 This is an enlarged cross-sectional view showing a portion of a substrate processing apparatus according to one embodiment.

[0018] Figure 7 This is a top view showing an example of the nozzle configuration below the substrate.

[0019] Figure 8 A flowchart illustrating a substrate processing method according to one embodiment.

[0020] Figure 9 This is a process table illustrating a cleaning method according to one embodiment.

[0021] Figure 10 It means Figure 9 A diagram of an example of S201.

[0022] Figure 11 It means Figure 9 A diagram of an example of S203.

[0023] Figure 12 It continues Figure 11 ,express Figure 9 A diagram of an example of S203.

[0024] Figure 13 It continues Figure 12 ,express Figure 9 A diagram of an example of S203.

[0025] Figure 14 This is a process table representing the cleaning method of the first modified example.

[0026] Figure 15This is a process table showing the cleaning method of the second variation. Detailed Implementation

[0027] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Furthermore, sometimes the same or corresponding structures are labeled with the same reference numerals in the various drawings, and descriptions are omitted. In this specification, the X-axis, Y-axis, and Z-axis directions are perpendicular to each other. The X-axis and Y-axis directions are horizontal directions, and the Z-axis direction is a vertical direction. Furthermore, in this specification, the r-axis direction is the radial direction of the substrate W, and the θ-axis direction is the circumferential direction of the substrate W. In this specification, the jet line is the line through which the treatment liquid discharged from the nozzle passes; in other words, it is the extension line of the nozzle's outlet.

[0028] First, refer to Figure 1 The substrate processing apparatus 1 will now be described. The substrate processing apparatus 1 processes a substrate W. In this embodiment, the substrate W can be a silicon wafer, a compound semiconductor wafer, or a glass substrate. A film (not shown) is formed on the substrate W. Examples of the film include titanium nitride (TiN) film, aluminum film, tungsten film, silicon nitride (SiN) film, silicon oxide (SiO2) film, polycrystalline silicon film, or thermally oxidized film. Multiple films may also be formed.

[0029] The substrate processing apparatus 1 supplies a chemical solution to the periphery of the substrate W to remove the film pre-formed on the periphery of the substrate W. The periphery of the substrate W includes an inclined portion, i.e., a chamfered surface. The periphery of the substrate W is, for example, the portion extending radially inward from the periphery of the substrate W within 50 mm. On the other hand, the center portion of the substrate W is, for example, the portion extending radially outward from the center of the substrate W within 50 mm.

[0030] The substrate processing apparatus 1 includes, for example, a holding part 2 that holds the substrate W horizontally; a rotating part 3 that rotates the holding part 2 about a vertical rotation axis 31; and a liquid supply unit 4 that supplies liquid to the upper surface Wa of the substrate W held in the holding part 2.

[0031] The holding part 2 holds the substrate W horizontally with its center aligned with the rotation center line of the rotation axis 31. The holding part 2 holds the center portion of the lower surface Wb of the substrate W, but not the periphery. In this embodiment, the holding part 2 is a vacuum chuck, but it can also be a mechanical chuck or an electrostatic chuck, etc. The holding part 2 can be any rotatable rotary chuck.

[0032] The rotating part 3 includes, for example, a vertical rotating shaft 31 and a rotary motor 32 that rotates the rotating shaft 31. The rotational driving force of the rotary motor 32 is transmitted to the holding part 2 via the rotating shaft 31. The holding part 2 rotates in two directions: a first direction RD1 and a second direction RD2, which is opposite to the first direction RD1.

[0033] When viewed from above, the first direction RD1 is clockwise and the second direction RD2 is counterclockwise. Alternatively, when viewed from above, the first direction RD1 and the second direction RD2 can be opposite, or the first direction RD1 can be counterclockwise and the second direction RD2 can be clockwise.

[0034] The liquid supply unit 4 includes: a first processing unit 40 that supplies processing liquid to the peripheral portion of the upper surface Wa of the substrate W; and a second processing unit 50 that supplies processing liquid to the peripheral portion of the upper surface Wa of the substrate W. The first processing unit 40 and the second processing unit 50 are as follows: Figure 2 As shown, the substrate W is arranged at intervals along its circumference.

[0035] First, the first processing unit 40 will be described. The first processing unit 40 is as follows: Figure 3 As shown, a first liquid nozzle 41 is provided. The first liquid nozzle 41 supplies a first liquid to the periphery of the upper surface Wa of the substrate W. The first liquid is not particularly limited, but in this embodiment it is an alkaline solution. The alkaline solution is, for example, SC1 (an aqueous solution containing ammonium hydroxide and hydrogen peroxide) or an aqueous solution of hydrogen peroxide. The first liquid nozzle 41 discharges the first liquid in a downward direction, for example. The jet line R1 of the first liquid nozzle 41 includes a component radially outward toward the substrate W and a component toward a first direction RD1.

[0036] During the rotation of the substrate W in the first direction RD1 by the rotating part 3, the first liquid nozzle 41 discharges the first liquid. As a result, the first liquid is supplied to the entire periphery of the upper surface Wa of the substrate W. When supplying the first liquid, when... Figure 4 When the rotation direction of the substrate W shown is the first direction RD1, it is similar to... Figure 5 Compared to the case where the rotation direction of the substrate W is the second direction RD2, the relative velocity between the substrate W and the first liquid L1 is smaller, resulting in a smaller impact during the collision, thus suppressing the splashing of the first liquid L1.

[0037] First processing unit 40 Figure 3 The diagram shows a first pure water nozzle 42. The first pure water nozzle 42 is positioned beside the first pharmaceutical nozzle 41. The first pure water nozzle 42 supplies pure water to the periphery of the upper surface Wa of the substrate W, removing the first pharmaceutical solution remaining on the periphery of the upper surface Wa of the substrate W. The first pure water nozzle 42 discharges pure water, for example, in a downward direction. The jet line R2 of the first pure water nozzle 42, like the jet line R1 of the first pharmaceutical nozzle 41, includes components radially outward toward the substrate W and components toward the first direction RD1.

[0038] During the rotation of the substrate W in the first direction RD1 by the rotating part 3, the first liquid nozzle 41 discharges the first liquid, and then the first pure water nozzle 42 discharges pure water. As a result, pure water is supplied to the entire periphery of the upper surface Wa of the substrate W, and the first liquid is removed. When supplying pure water, when the rotation direction of the substrate W is in the first direction RD1, compared with the case in the second direction RD2, the relative velocity between the substrate W and the pure water is smaller, the impact during impact is smaller, and therefore the splashing of pure water can be suppressed.

[0039] First processing unit 40 Figure 2 As shown, a moving mechanism 43 is provided. The moving mechanism 43 moves the first medicine nozzle 41 and the first pure water nozzle 42 radially in the substrate W. In addition, the moving mechanism 43 can also move the first medicine nozzle 41 and the first pure water nozzle 42 in the vertical direction.

[0040] First processing unit 40 Figure 1 As shown, the device includes a first liquid medicine supply unit 45. The first liquid medicine supply unit 45 includes a supply line 45a connected to a first liquid medicine nozzle 41. Midway through the supply line 45a, an on / off valve 45b for opening and closing the flow path of the first liquid medicine and a flow controller 45c for controlling the flow rate of the first liquid medicine are provided. Midway through the supply line 45a, a heater 45d for heating the first liquid medicine may also be provided.

[0041] The first processing unit 40 includes a first pure water supply unit 46. The first pure water supply unit 46 includes a supply line 46a connected to a first pure water nozzle 42. Midway through the supply line 46a, an on / off valve 46b for opening and closing the flow path of the pure water and a flow controller 46c for controlling the flow rate of the pure water are provided. Midway through the supply line 46a, a heater 46d for heating the pure water may also be provided.

[0042] The second processing unit 50 will now be described. The second processing unit 50 is as follows... Figure 3 As shown, a second liquid nozzle 51 is provided. The second liquid nozzle 51 supplies a second liquid to the periphery of the upper surface Wa of the substrate W. The second liquid is not particularly limited, but in this embodiment it is an acidic solution. The acidic solution is, for example, DHF (dilute hydrofluoric acid), HF (hydrofluoric acid), SC2 (an aqueous solution containing hydrogen chloride and hydrogen peroxide), or a mixture of nitric acid and hydrofluoric acid. The second liquid nozzle 51 discharges the second liquid, for example, in a downward direction. The jet line R3 of the second liquid nozzle 51 includes a component that is radially outward toward the substrate W and a component that is in the second direction RD2.

[0043] During the rotation of the substrate W in the second direction RD2 by the rotating part 3, the second liquid nozzle 51 discharges the second liquid. As a result, the second liquid is supplied to the entire periphery of the upper surface Wa of the substrate W. When the substrate W is rotated in the second direction RD2, the relative velocity between the substrate W and the second liquid is smaller compared to the case where it is rotated in the first direction RD1, resulting in less impact upon impact and thus suppressing splashing of the second liquid.

[0044] The second processing unit 50 has a second pure water nozzle 52. The second pure water nozzle 52 is disposed beside the second pharmaceutical nozzle 51. The second pure water nozzle 52 supplies pure water to the periphery of the upper surface Wa of the substrate W to remove the second pharmaceutical solution remaining on the periphery of the upper surface Wa of the substrate W. The second pure water nozzle 52 discharges pure water, for example, in a downward direction. The jet line R4 of the second pure water nozzle 52, like the jet line R3 of the second pharmaceutical nozzle 51, includes components radially outward toward the substrate W and components toward the second direction RD2.

[0045] During the rotation of the substrate W in the second direction RD2 by the rotating part 3, the second liquid nozzle 51 discharges the second liquid, and then the second pure water nozzle 52 discharges pure water. As a result, pure water is supplied to the entire periphery of the upper surface Wa of the substrate W, and the second liquid is removed. When supplying pure water, when the rotation direction of the substrate W is the second direction RD2, compared with the case where it is the first direction RD1, the relative velocity between the substrate W and the pure water is smaller, and the impact during collision is smaller, thus suppressing the splashing of pure water.

[0046] The second processing unit 50, as shown in Figure 2 As shown, a moving mechanism 53 is included. The moving mechanism 53 moves the second medicine nozzle 51 and the second pure water nozzle 52 radially in the substrate W. Furthermore, the moving mechanism 53 can also move the second medicine nozzle 51 and the second pure water nozzle 52 in the vertical direction.

[0047] The second processing unit 50, as shown in Figure 1 As shown, the device includes a second medicine supply unit 55. The second medicine supply unit 55 includes a supply line 55a connected to a second medicine nozzle 51. Midway through the supply line 55a, an on / off valve 55b for opening and closing the flow path of the second medicine and a flow controller 55c for controlling the flow rate of the second medicine are provided. Midway through the supply line 55a, a heater 55d for heating the second medicine may also be provided.

[0048] The second processing unit 50 includes a second pure water supply unit 56. The second pure water supply unit 56 includes a supply line 56a connected to a second pure water nozzle 52. Midway through the supply line 56a, an on / off valve 56b for opening and closing the flow path of the pure water and a flow controller 56c for controlling the flow rate of the pure water are provided. Midway through the supply line 56a, a heater 56d for heating the pure water may also be provided.

[0049] Additionally, below the substrate W, as Figure 7 As shown, a third pharmaceutical nozzle 47 and a third pure water nozzle 48 may also be configured. The third pharmaceutical nozzle 47 supplies the first pharmaceutical solution to the periphery of the lower surface Wb of the substrate W. The third pharmaceutical nozzle 47 discharges the first pharmaceutical solution, for example, in an upward oblique direction. The jet line R5 of the third pharmaceutical nozzle 47 includes components radially outward toward the substrate W and components in the first direction RD1. The third pure water nozzle 48 supplies pure water to the periphery of the lower surface Wb of the substrate W. The third pure water nozzle 48 discharges pure water, for example, in an upward oblique direction. The jet line R6 of the third pure water nozzle 48 includes components radially outward toward the substrate W and components in the first direction RD1.

[0050] Additionally, a fourth pharmaceutical nozzle 57 and a fourth pure water nozzle 58 may be disposed below the substrate W. The fourth pharmaceutical nozzle 57 supplies a second pharmaceutical solution to the periphery of the lower surface Wb of the substrate W. The fourth pharmaceutical nozzle 57 discharges the second pharmaceutical solution, for example, in an upward-sloping direction. The jet line R7 of the fourth pharmaceutical nozzle 57 includes components directed radially outward toward the substrate W and components directed in a second direction RD2. The fourth pure water nozzle 58 supplies pure water to the periphery of the lower surface Wb of the substrate W. The fourth pure water nozzle 58 discharges pure water, for example, in an upward-sloping direction. The jet line R8 of the fourth pure water nozzle 58 includes components directed radially outward toward the substrate W and components directed in a second direction RD2.

[0051] Liquid supply unit 4, such as Figure 1 As shown, it also includes a third processing unit 60 that supplies processing liquid to the center of the upper surface Wa of the substrate W. The third processing unit 60 includes, for example, a central nozzle 61 disposed directly above the rotation axis 31, and a moving mechanism 63 for moving the central nozzle 61 (see reference). Figure 2 ) and the supply unit 65 that supplies the treatment fluid to the central nozzle 61.

[0052] The central nozzle 61 supplies pure water, such as DIW (deionized water), to the center of the upper surface Wa of the substrate W. The central nozzle 61 discharges pure water, for example, directly downwards. The pure water is supplied to the center of the upper surface Wa of the rotating substrate W, and under the action of centrifugal force, it wets and diffuses across the entire upper surface of the substrate W, and is thrown off from the periphery of the upper surface Wa of the substrate W.

[0053] The moving mechanism 63 includes a rotating arm 63a that holds the central nozzle 61 and a rotation mechanism (not shown) that rotates the rotating arm 63a. The rotation mechanism can also function as a mechanism for raising and lowering the rotating arm 63a. The rotating arm 63a is horizontally positioned, holding the central nozzle 61 at one end along its length and rotating about a rotation axis extending downward from its other end along its length. Alternatively, the moving mechanism 63 can have a guide rail and a linear motion mechanism instead of the rotating arm 63a and the rotation mechanism.

[0054] The supply unit 65 includes a supply line 65a connected to the central nozzle 61. Midway through the supply line 65a, an on / off valve 65b for opening and closing the flow path of pure water and a flow controller 65c for controlling the flow rate of pure water are provided. Midway through the supply line 65a, a heater 65d for heating the pure water may also be provided.

[0055] Substrate processing apparatus 1 as follows Figure 6 As shown, it also includes a cup-shaped body 7. The cup-shaped body 7 surrounds the periphery of the substrate W held in the holding part 2 and catches liquid that spills from the periphery of the substrate W. In this embodiment, the cup-shaped body 7 does not rotate with the rotation axis 31, but it may rotate with the rotation axis 31. The cup-shaped body 7 has a horizontal bottom wall 70, an outer peripheral wall 71 extending upward from the periphery of the bottom wall 70, a separation wall 72 disposed inside the outer peripheral wall 71, and an inner peripheral wall 73 disposed inside the separation wall 72. The outer peripheral wall 71, the separation wall 72, and the inner peripheral wall 73 are arranged in a concentric circle. A recess 74 for recovering liquid is formed between the outer peripheral wall 71 and the separation wall 72. The liquid recovered into the recess 74 is discharged to the outside of the substrate processing apparatus 1 through the drainage passage 70a of the bottom wall 70. In addition, a recess 75 for recovering gas is formed between the separation wall 72 and the inner peripheral wall 73. The gas recovered into the recess 75 is discharged to the outside of the substrate processing apparatus 1 through the exhaust passage 70b of the bottom wall 70. The separation wall 72 separates the outer recess 74 from the inner recess 75 to separate the liquid from the gas.

[0056] The outer peripheral wall 71 of the cup-shaped body 7 has an inclined surface 71a for receiving liquid spilled from the periphery of the substrate W. The inclined surface 71a slopes downward toward the radially outward side of the substrate W. A passage 77 for both liquid and gas is formed between the inclined surface 71a of the outer peripheral wall 71 and the upper surface 76a of the guide wall 76. Furthermore, a gas passage 78 is formed between the lower surface 76b of the guide wall 76 and the upper surface 72a of the separation wall 72. The guide wall 76 slopes downward toward the radially outward side from the upper end of the inner peripheral wall 73. Liquid is collected in the outer recess 74 through the passage 77. Gas is collected in the inner recess 75 through the passages 77 and 78.

[0057] The substrate processing apparatus 1 also includes a cover member 8. The cover member 8 is movably disposed above the substrate W held in the holding portion 2. The cover member 8 is an annular component opposite to the periphery of the upper surface Wa of the substrate W. An annular gap is formed between the cover member 8 and the substrate W, creating a strong airflow. The airflow forms along the upper surface Wa of the substrate W and flows radially outward from the substrate W. Due to the airflow, fog adhesion to the upper surface Wa of the substrate W is suppressed.

[0058] The cover 8 includes: an inner cylinder portion 81 opposite to the periphery of the upper surface Wa of the substrate W; an outer cylinder portion 82 disposed outside the inner cylinder portion 81; and a sealing portion 83 sealing the outer cylinder portion 82 and the outer peripheral wall 71 of the cup-shaped body 7. The outer peripheral wall 71 includes a protrusion 71b inserted into a recess 82a of the outer cylinder portion 82. The protrusion 71b and the recess 82a form a labyrinth structure. The sealing portion 83 is disposed outside the labyrinth structure.

[0059] The inner cylinder portion 81 has a circular opening when viewed from above. The diameter of this opening is smaller than the diameter of the substrate W. A gap is formed between the inner cylinder portion 81 and the periphery of the upper surface Wa of the substrate W. The inner cylinder portion 81 protrudes downwards from the outer cylinder portion 82 in such a way that the gap is smaller, or even in a way that a stronger airflow is formed in the gap.

[0060] Cover part 8 Figure 2 As shown, the substrate W includes a first notch 81a and a second notch 81b at its inner edge. A first liquid nozzle 41 and a first pure water nozzle 42 are arranged in the first notch 81a in a manner that allows them to move radially in the substrate W. On the other hand, a second liquid nozzle 51 and a second pure water nozzle 52 are arranged in the second notch 81b in a manner that allows them to move radially in the substrate W.

[0061] The substrate processing apparatus 1 also includes a control unit 9. The control unit 9 controls, for example, the rotating unit 3 and the liquid supply unit 4. The control unit 9 includes, for example, a computer, a CPU (Central Processing Unit) 91, and a storage medium 92 such as a memory. The storage medium 92 stores programs that control various processes executed in the substrate processing apparatus 1. The control unit 9 controls the operation of the substrate processing apparatus 1 by causing the CPU 91 to execute the programs stored in the storage medium 92.

[0062] Below, refer to Figure 8 The substrate processing method is explained. Figure 8 Each step S101 to S111 shown is performed under the control of the control unit 9. Furthermore, Figure 8 The order of steps S101 to S111 shown is not particularly limited. For example, S102 to S104 and S106 to S108 can be interchanged.

[0063] First, in S101, a conveying device (not shown) feeds the substrate W into the interior of the processing container 11. The processing container 11 houses the holding part 2, etc., inside it. After the conveying device places the substrate W on the holding part 2, and the holding part 2 holds the substrate W, the conveying device withdraws to the outside of the processing container 11. Then, the cover 8 is lowered and placed on the outer peripheral wall 71 of the cup-shaped body 7. A fan unit 12 is arranged at the top of the processing container 11, and the fan unit 12 forms a downward flow above the substrate W. As a result, an airflow is formed between the substrate W and the cover 8, moving from the radially inner side of the substrate W to the radially outer side. The airflow flows along the inclined surface 71a of the outer peripheral wall 71 of the cup-shaped body 7 and is drawn back to the inner recess 75.

[0064] Next, in S102, the rotating part 3 causes the substrate W to rotate together with the holding part 2 in the first direction RD1.

[0065] Next, in S103, the first liquid nozzle 41 supplies the first liquid to the periphery of the upper surface Wa of the substrate W. At this time, the third liquid nozzle 47 supplies the first liquid to the periphery of the lower surface Wb of the substrate W. The first liquid is an alkaline solution such as SC1, which can remove the film pre-formed on the periphery of the substrate W. After being thrown off from the periphery of the substrate W, the first liquid flows along the inclined surface 71a of the outer peripheral wall 71 of the cup-shaped body 7 and is collected in the outer recess 74.

[0066] Next, in S104, the first pure water nozzle 42 supplies pure water to the periphery of the upper surface Wa of the substrate W. At the same time, the third pure water nozzle 48 supplies pure water to the periphery of the lower surface Wb of the substrate W. The pure water washes away the first chemical solution remaining at the periphery of the substrate W. After being thrown off from the periphery of the substrate W, the pure water flows along the inclined surface 71a of the outer peripheral wall 71 of the cup-shaped body 7 and is collected in the outer recess 74.

[0067] Next, in S105, the rotating part 3 stops the substrate W from rotating.

[0068] Next, in S106, the rotating part 3 causes the substrate W to rotate together with the holding part 2 in the second direction RD2.

[0069] Next, in S107, the second liquid nozzle 51 supplies the second liquid to the periphery of the upper surface Wa of the substrate W. At the same time, the fourth liquid nozzle 57 supplies the second liquid to the periphery of the lower surface Wb of the substrate W. The second liquid is an acidic solution such as DHF, which can remove the film pre-formed on the periphery of the substrate W. After being thrown off from the periphery of the substrate W, the second liquid flows along the inclined surface 71a of the outer peripheral wall 71 of the cup-shaped body 7 and is collected in the outer recess 74.

[0070] Next, in S108, the second pure water nozzle 52 supplies pure water to the periphery of the upper surface Wa of the substrate W. At the same time, the fourth pure water nozzle 58 supplies pure water to the periphery of the lower surface Wb of the substrate W. The pure water washes away the second chemical solution remaining at the periphery of the substrate W. After being thrown off from the periphery of the substrate W, the pure water flows along the inclined surface 71a of the outer peripheral wall 71 of the cup-shaped body 7 and is collected in the outer recess 74.

[0071] Next, in S109, the pure water remaining on the substrate W is shaken off by rotating the substrate W, thus drying the substrate W. In S109, the rotational speed of the substrate W can also be greater than that in S107 and S108 described above.

[0072] Next, in S110, the rotating part 3 stops the substrate W from rotating.

[0073] Next, in S111, the opposite operation to S101 is performed to deliver the substrate W. Specifically, first, the cover 8 is raised to its original position. Then, the conveying device enters the interior of the processing container 11, retrieves the substrate W from the holding part 2, and delivers the retrieved substrate W to the outside of the processing container 11.

[0074] Replace substrate W and repeat the process. Figure 8 The processing of substrate W is shown. The result is as follows: Figure 6 As shown, deposit D is formed on the inclined surface 71a of the outer peripheral wall 71 of the cup-shaped body 7. Deposits D are formed due to the drying of droplets adhering to the inclined surface 71a of the outer peripheral wall 71. Deposits D are, for example, a reprecipitate of a film removed from the substrate W using a first solution. This reprecipitate is dissolved in the first solution and can therefore be removed by the first solution.

[0075] Next, refer to Figure 9 The cleaning method using the first solution is explained. Figure 9 Each step S201 to S206 shown is performed under the control of the control unit 9. For example, when the number of substrates W to be etched reaches a set number, the conveying device sends the substrate DW to be cleaned into the processing container 11 and delivers it to the holding unit 2. The holding unit 2 holds the substrate DW, and after the conveying device exits the processing container 11, the processing after S201 begins.

[0076] The substrate DW used for cleaning differs from the substrate W used for etching in that it is a substrate without a film formed on it. The diameter of the substrate W used for etching is the same as the diameter of the substrate DW used for cleaning. The substrate W used for etching is, for example, a silicon wafer, and the substrate DW used for cleaning is, for example, a silicon carbide wafer. Alternatively, a substrate with a film formed on it can also be used as the substrate DW used for cleaning.

[0077] First, in S201, the holding part 2 holds the substrate DW horizontally inside the cup-shaped body 7, and the rotating part 3 rotates the substrate DW in the first direction RD1. Furthermore, in S201, the central nozzle 61 supplies pure water to the center of the upper surface DWa of the substrate DW. Under the action of centrifugal force, the pure water flows radially outward from the substrate DW and is thrown off from the periphery of the substrate DW.

[0078] Additionally, in S201, such as Figure 11 As shown, the first drug nozzle 41 supplies a first drug solution L1 to the periphery of the upper surface DWa of the substrate DW, which is rotating in the first direction RD1. The first drug solution L1 is an alkaline solution such as SC1. The liquid flow F1 of the first drug solution L1 collides with the liquid flow F2 of pure water L2, and the droplets are scattered in various directions due to the impact. Figure 10 As shown, droplets of the first drug solution L1 can be supplied to a wider range of the inclined surface 71a of the outer peripheral wall 71, and the deposit D can be removed by dissolving the first drug solution L1.

[0079] The higher the rotational speed of the substrate DW, the faster the liquid flow F2 of pure water L2, and the easier it is for the droplets to disperse. The rotational speed of the substrate DW is, for example, 1500 rpm to 2500 rpm. In the following S202 to S203, S301 to S303, S305 to S307, S401 to S403, and S405 to S407, the rotational speed of the substrate DW is also, for example, 1500 rpm to 2500 rpm.

[0080] Generally, the impact caused by a collision is large at the beginning of the collision. Therefore, it is also possible that in S201, the first liquid nozzle 41 intermittently discharges the first liquid L1. This intermittently forms a liquid flow F1 of the first liquid L1, and intermittently causes collisions between the liquid flow F1 of the first liquid L1 and the liquid flow F2 of pure water L2. This intermittently generates large impacts, easily producing droplets.

[0081] Alternatively, in S201, heater 45d heats the first liquid solution L1 before discharge. Similarly, heater 65d heats the pure water L2 before discharge. The temperature of the dispersed droplets increases, thus promoting the dissolution reaction of the sediment D.

[0082] Next, in S202, the first liquid nozzle 41 supplies the first liquid L1 to the periphery of the upper surface DWa of the substrate DW, which is rotating in the second direction RD2. As the substrate DW rotates, droplets of the first liquid L1 scattered at the periphery of the substrate DW are transported in the direction of rotation of the substrate DW. Gas near the periphery of the substrate DW is dragged along by the substrate DW and rotates with it, thus transporting droplets of the first liquid L1 in the direction of rotation of the substrate DW.

[0083] In S201 and S202, the rotation direction of the substrate DW is reversed. As a result, the transport direction of the droplets of the first drug solution L1 is reversed, and the droplets of the first drug solution L1 are supplied equally throughout the entire circumference of the outer peripheral wall 71. Therefore, the deposit D can be removed from the entire circumference of the outer peripheral wall 71.

[0084] The jet line R1 of the first liquid nozzle 41, as described above, has a component oriented towards the first direction RD1. In S202, unlike S201, the first liquid L1 is supplied in the opposite direction to the rotation of the substrate DW. In S202, compared to S201, the relative velocity between the first liquid L1 and the substrate DW is larger, resulting in a greater impact upon impact and thus making it easier to generate droplets.

[0085] Next, in S203, the same action as in S201 is performed, except that the moving mechanism 43 moves the first liquid nozzle 41 between the first position and the second position. The first position is as follows: Figure 11 As shown, this is the position where the spray line R1 of the first liquid nozzle 41 reaches the periphery of the upper surface DWa of the substrate DW. On the other hand, the second position is as follows... Figure 13 As shown, the position of the spray line R1 of the first liquid nozzle 41 deviating from the substrate DW.

[0086] In S203, the moving mechanism 43 can move the first liquid nozzle 41 from a first position to a second position, or vice versa. During the movement of the first liquid nozzle 41 from the second position to the first position, the rotational speed of the substrate W can be increased. Regardless, the jet line R1 of the first liquid nozzle 41 passes through the periphery of the substrate DW. At this time, as... Figure 12 As shown, the direction of droplet dispersion changes. This allows for the supply of droplets of the first drug solution L1 to a wider area.

[0087] As the jet line R1 of the first liquid nozzle 41 passes through the periphery of the substrate DW, the first liquid L1 is supplied from the first liquid nozzle 41 to the inclined portion DWc of the substrate DW. Due to the inclined portion DWc, the direction of droplet dispersion changes. As a result, droplets of the first liquid L1 can be supplied to a wider range.

[0088] In S203, the moving mechanism 43 can also cause the first liquid nozzle 41 to reciprocate between the first position and the second position. By causing the first liquid nozzle 41 to reciprocate, a sufficient amount of droplets of the first liquid L1 can be supplied to a wider range. The reciprocating motion of the first liquid nozzle 41 can also be performed repeatedly. Alternatively, when the first liquid nozzle 41 reciprocates between the first position and the second position, the rotation direction of the substrate W can be reversed when the first liquid nozzle 41 reaches the second position.

[0089] Next, in S204, the central nozzle 61 supplies pure water L2 to the center of the upper surface DWa of the substrate DW, which is rotating in the first direction RD1. Under the action of centrifugal force, the pure water L2 flows radially outward from the substrate DW and is thrown off from the periphery of the substrate DW, washing away the first liquid L1 remaining on the inclined surface 71a of the outer peripheral wall 71.

[0090] Next, in S205, the central nozzle 61 supplies pure water L2 to the center of the upper surface DWa of the substrate DW, which is rotating in the second direction RD2. Droplets of pure water L2 that are thrown off from the periphery of the substrate DW during its rotation are transported in the direction of rotation of the substrate DW.

[0091] In S204 and S205, the rotation direction of the substrate DW is reversed. As a result, the transport direction of the pure water L2 droplets is reversed, and the pure water L2 droplets are supplied evenly to the entire circumference of the outer peripheral wall 71. Therefore, the first drug solution L1 can be removed from the entire circumference of the outer peripheral wall 71.

[0092] Next, in S206, the holding part 2 holds the substrate DW horizontally inside the cup-shaped body 7, and the rotating part 3 rotates the substrate DW in the second direction RD2 to remove the pure water L2 remaining on the substrate DW, thus drying the substrate DW. Afterwards, the conveying device retrieves the substrate DW from the holding part 2 and sends it to the outside of the processing container 11.

[0093] In this embodiment, the central nozzle 61 corresponds to the first nozzle described in the technical solution, and the first chemical solution nozzle 41 corresponds to the second nozzle described in the technical solution. Furthermore, in this embodiment, pure water L2 corresponds to the first treatment solution described in the technical solution, and the first chemical solution L1 corresponds to the second treatment solution described in the technical solution. Additionally, in this embodiment, the first chemical solution L1 is an alkaline solution such as SC1, but it can also be an acidic solution such as DHF. The order of S201 to S205 is not limited. Figure 9 The order, for example, the order of S201 and S202 can also be reversed.

[0094] Alternatively, the central nozzle 61 can also discharge the first chemical solution L1 in S201 to S203 to replace the pure water L2. The liquid flow F2 that replaces the pure water L2 forms the liquid flow F2 of the first chemical solution L1. In the latter case, the liquid flows F1 and F2 of the first chemical solution L1 collide with each other, thereby suppressing the decrease in the concentration of the first chemical solution L1 and efficiently dissolving the deposit D.

[0095] Next, refer to Figure 14 The cleaning method using pure water will be described. In this modified example, the deposit D is a reaction product of the first and second solutions, such as a salt of an alkaline solution and an acidic solution. The salt dissolves in pure water and can therefore be removed with pure water. Figure 14Each step S301 to S309 shown is performed under the control of the control unit 9. The conditions for starting the processing after S301 are the same as those for starting the process. Figure 9 The conditions for processing after S201 are the same.

[0096] First, in S301, the holding part 2 holds the substrate DW horizontally inside the cup-shaped body 7, and the rotating part 3 rotates the substrate DW in the second direction RD2. Additionally, in S301, the central nozzle 61 supplies pure water to the center of the upper surface DWa of the substrate DW. Under the action of centrifugal force, the pure water flows radially outward from the substrate DW and is thrown off from the periphery of the substrate DW.

[0097] Additionally, in S301, the second pure water nozzle 52 supplies pure water to the periphery of the upper surface DWa of the substrate DW, which rotates in the second direction RD2. The pure water streams collide with each other, causing droplets to scatter in various directions due to the impact. The pure water droplets, which can be supplied to a wider range of the inclined surface 71a of the outer peripheral wall 71, can dissolve and remove the deposit D using pure water.

[0098] Generally, the impact caused by a collision is large at the beginning of the collision. Therefore, it is also possible that in S301, the second pure water nozzle 52 intermittently discharges pure water. The intermittent formation of pure water flow results in intermittent collisions between the pure water flow streams. The intermittent generation of large impacts easily produces droplets.

[0099] Alternatively, in S301, heater 56d can heat the pure water before discharge. Similarly, heater 65d can also heat the pure water before discharge. The temperature of the dispersed droplets increases, thus promoting the dissolution reaction of sediment D.

[0100] Next, in S302, the second pure water nozzle 52 supplies pure water to the periphery of the upper surface DWa of the substrate DW, which is rotating in the first direction RD1. As the substrate DW rotates, droplets of pure water that disperse at the periphery of the substrate DW are transported in the direction of rotation of the substrate DW.

[0101] In S301 and S302, the rotation direction of the substrate DW is reversed. As a result, the transport direction of the pure water droplets is reversed, and the pure water droplets are supplied equally to the entire circumference of the outer peripheral wall 71. Therefore, the deposit D can be removed from the entire circumference of the outer peripheral wall 71.

[0102] The jet line R4 of the second pure water nozzle 52, as described above, has a component pointing towards the second direction RD2. In S302, unlike S301, pure water is supplied in the opposite direction to the rotation of the substrate DW. In S302, compared to S301, the relative velocity between the pure water and the substrate DW is greater, resulting in a larger impact upon impact and thus making it easier to generate droplets.

[0103] Next, in S303, the same operation as in S301 is performed, except that the moving mechanism 53 moves the second pure water nozzle 52 between the third and fourth positions. The third position is the position where the jet line R4 of the second pure water nozzle 52 reaches the periphery of the upper surface DWa of the substrate DW. On the other hand, the fourth position is the position where the jet line R4 of the second pure water nozzle 52 deviates from the substrate DW.

[0104] In S303, the moving mechanism 53 can move the second pure water nozzle 52 from the third position to the fourth position, or vice versa. During the movement of the second pure water nozzle from the fourth position to the third position, the rotational speed of the substrate W can be increased. In any case, the jet line R4 of the second pure water nozzle 52 passes through the periphery of the substrate DW. At this time, the direction of droplet dispersion changes. Thus, pure water droplets can be supplied to a wider range.

[0105] As the jet line R4 of the second pure water nozzle 52 passes through the periphery of the substrate DW, pure water is supplied from the second pure water nozzle 52 to the inclined portion DWc of the substrate DW. Due to the inclined portion DWc, the direction of droplet dispersion changes. As a result, pure water droplets can be supplied to a wider range.

[0106] Alternatively, in S303, the moving mechanism 53 causes the second pure water nozzle 52 to reciprocate between the third and fourth positions. By reciprocating the second pure water nozzle 52, a sufficient amount of pure water droplets can be supplied to a wider range. The reciprocating motion of the second pure water nozzle 52 can also be performed repeatedly. Alternatively, when the second pure water nozzle 52 reciprocates between the third and fourth positions, the rotation direction of the substrate W is reversed when the second pure water nozzle 52 reaches the fourth position.

[0107] Next, in S304, the central nozzle 61 supplies pure water to the center of the upper surface DWa of the substrate DW, which is rotating in the second direction RD2. S304 is related to... Figure 9 The same process applies to S205 shown.

[0108] Next, in S305, the central nozzle 61 supplies pure water to the center of the upper surface DWa of the substrate DW, which is rotating in the first direction RD1. Under the action of centrifugal force, the pure water flows radially outward from the substrate DW and is thrown off from the periphery of the substrate DW.

[0109] In addition, in S305, the first pure water nozzle 42 supplies pure water to the periphery of the upper surface DWa of the substrate DW, which is rotating in the first direction RD1. The pure water streams collide with each other, causing the droplets to scatter in various directions due to the impact. The pure water droplets that can be supplied to a wider range of the inclined surface 71a of the outer peripheral wall 71 can dissolve and remove the deposit D using pure water.

[0110] Generally, the impact caused by a collision is large at the beginning of the collision. Therefore, in S305, the first pure water nozzle 42 intermittently discharges pure water. This intermittently forms a pure water flow, resulting in intermittent collisions between the pure water flows. The intermittently generated large impacts easily produce droplets.

[0111] Alternatively, in S305, heater 46d heats the pure water before discharge. Similarly, heater 65d also heats the pure water before discharge. The increased temperature of the dispersed droplets promotes the dissolution reaction of sediment D.

[0112] Next, in S306, the first pure water nozzle 42 supplies pure water to the periphery of the upper surface DWa of the substrate DW, which is rotating in the second direction RD2. As the substrate DW rotates, droplets of pure water that disperse at the periphery of the substrate DW are transported in the direction of rotation of the substrate DW.

[0113] In S305 and S306, the rotation direction of the substrate DW is reversed. As a result, the transport direction of the pure water droplets is reversed, and the pure water droplets are supplied equally to the entire circumference of the outer peripheral wall 71. Therefore, the deposit D can be removed from the entire circumference of the outer peripheral wall 71.

[0114] The jet line R2 of the first pure water nozzle 42, as described above, has a component oriented towards the first direction RD1. In S306, unlike S305, pure water is supplied in the opposite direction to the rotation of the substrate DW. In S306, compared to S305, the relative velocity between the pure water and the substrate DW is greater, resulting in a larger impact upon impact and thus making it easier to generate droplets.

[0115] Next, in S307, the same operation as in S305 is performed, except that the moving mechanism 43 moves the first pure water nozzle 42 between the fifth and sixth positions. The fifth position is the position where the jet line R2 of the first pure water nozzle 42 reaches the periphery of the upper surface DWa of the substrate DW. On the other hand, the sixth position is the position where the jet line R2 of the first pure water nozzle 42 deviates from the substrate DW.

[0116] In S307, the moving mechanism 43 can move the first pure water nozzle 42 from the fifth position to the sixth position, or vice versa. During the movement of the first pure water nozzle 42 from the sixth position to the fifth position, the rotational speed of the substrate W can be increased. In any case, the jet line R2 of the first pure water nozzle 42 passes through the periphery of the substrate DW. At this time, the direction of droplet dispersion changes. Thus, pure water droplets can be supplied to a wider range.

[0117] As the jet line R2 of the first pure water nozzle 42 passes through the periphery of the substrate DW, pure water is supplied from the first pure water nozzle 42 to the inclined portion DWc of the substrate DW. Due to the inclined portion DWc, the direction of droplet dispersion changes. As a result, pure water droplets can be supplied to a wider range.

[0118] Alternatively, in S307, the moving mechanism 43 causes the first pure water nozzle 42 to reciprocate between the fifth and sixth positions. By reciprocating the first pure water nozzle 42, a sufficient amount of pure water droplets can be supplied to a wider range. The reciprocating motion of the first pure water nozzle 42 can also be performed repeatedly. Alternatively, when the first pure water nozzle 42 reciprocates between the fifth and sixth positions, the rotation direction of the substrate W is reversed when the first pure water nozzle 42 reaches the sixth position.

[0119] Next, in S308, the holding part 2 holds the substrate DW horizontally inside the cup-shaped body 7, the rotating part 3 rotates the substrate DW in the first direction RD1, and the central nozzle 61 supplies pure water to the center of the upper surface DWa of the substrate DW. S308 is related to... Figure 9 The same process applies to S204 shown.

[0120] Next, in S309, the holding part 2 holds the substrate DW horizontally inside the cup-shaped body 7, and the rotating part 3 rotates the substrate DW in the first direction RD1 to remove the pure water remaining on the substrate DW and dry the substrate DW. After that, the conveying device takes the substrate DW from the holding part 2 and sends it to the outside of the processing container 11.

[0121] In this modified example, the central nozzle 61 corresponds to the first nozzle described in the technical solution, the first pure water nozzle 42 corresponds to the second nozzle described in the technical solution, and the second pure water nozzle 52 corresponds to the third nozzle described in the technical solution. Furthermore, in this modified example, the first treatment liquid, the second treatment liquid, and the third treatment liquid are all pure water. The order of S301 to S308 is not limited. Figure 14 The order, for example, the order of S301~S304 and S305~S308 can also be reversed.

[0122] Next, refer to Figure 15The cleaning method using both the first and second cleaning solutions will be described. The deposit D in this modified example contains two types of redepositions. One type of redeposition is the redeposition of the membrane removed from the substrate W using the first cleaning solution; it dissolves in the first cleaning solution and can therefore be removed by the first cleaning solution. The other type of redeposition is the redeposition of the membrane removed from the substrate W using the second cleaning solution; it dissolves in the second cleaning solution and can therefore be removed by the second cleaning solution. Figure 15 Each step S401 to S409 shown is performed under the control of the control unit 9. The conditions for starting processing after S401 are the same as those for starting processing. Figure 9 The conditions for processing after S201 are the same.

[0123] First, in S401, the holding part 2 holds the substrate DW horizontally inside the cup-shaped body 7, and the rotating part 3 rotates the substrate DW in the second direction RD2. Additionally, in S401, the central nozzle 61 supplies pure water to the center of the upper surface DWa of the substrate DW. Under the action of centrifugal force, the pure water flows radially outward from the substrate DW, and the periphery of the substrate DW is thrown off.

[0124] Additionally, in S401, the second chemical solution nozzle 51 supplies a second chemical solution to the periphery of the upper surface DWa of the substrate DW, which is rotating in the second direction RD2. The second chemical solution is an acidic solution such as DHF. The flow of the second chemical solution collides with the flow of pure water, causing droplets to scatter in various directions due to the impact. Droplets of the second chemical solution can be supplied to a wider range of the inclined surface 71a of the outer peripheral wall 71, dissolving and removing a portion of the deposit D.

[0125] Generally, the impact caused by a collision is large at the beginning of the collision. Therefore, it is also possible that in S401, the second liquid nozzle 51 intermittently discharges the second liquid. The intermittent flow of the second liquid creates intermittent collisions between the second liquid flow and the pure water flow. The intermittent large impacts easily generate droplets.

[0126] Alternatively, in S401, heater 55d can heat the second liquid before discharge. Similarly, heater 65d can heat the pure water before discharge. The temperature of the dispersed droplets increases, thus promoting the dissolution reaction of sediment D.

[0127] Next, in S402, the second liquid nozzle 51 supplies the second liquid to the periphery of the upper surface DWa of the substrate DW, which is rotating in the first direction RD1. Droplets of the second liquid that are dispersed at the periphery of the substrate DW during its rotation are transported in the direction of rotation of the substrate DW.

[0128] In S401 and S402, the rotation direction of the substrate DW is reversed. As a result, the transport direction of the second liquid droplets is reversed, and the droplets of the second liquid are supplied equally to the entire circumference of the outer peripheral wall 71. Therefore, the deposit D can be removed from the entire circumference of the outer peripheral wall 71.

[0129] The jet line R3 of the second liquid nozzle 51, as described above, has a component pointing towards the second direction RD2. In S402, unlike S401, the second liquid is supplied in the opposite direction to the rotation of the substrate DW. In S402, compared to S401, the relative velocity between the second liquid and the substrate DW is greater, resulting in a larger impact upon impact and thus making it easier to generate droplets.

[0130] Next, in S403, the same operation as in S401 is performed, except that the moving mechanism 53 moves the second liquid nozzle 51 between the seventh and eighth positions. The seventh position is the position where the jet line R3 of the second liquid nozzle 51 reaches the periphery of the upper surface DWa of the substrate DW. On the other hand, the eighth position is the position where the jet line R3 of the second liquid nozzle 51 deviates from the substrate DW.

[0131] In S403, the moving mechanism 53 can move the second liquid nozzle 51 from the seventh position to the eighth position, or vice versa. Between the movement of the second liquid nozzle 51 from the eighth position to the seventh position, the rotational speed of the substrate W can be increased. Regardless, the jet line R3 of the second liquid nozzle 51 passes through the periphery of the substrate DW. At this time, the direction of droplet dispersion changes. Therefore, droplets of the second liquid can be supplied to a wider area.

[0132] As the jet line R3 of the second liquid nozzle 51 passes through the periphery of the substrate DW, the second liquid is supplied from the second liquid nozzle 51 to the inclined portion DWc of the substrate DW. Due to the inclined portion DWc, the direction of droplet dispersion changes. As a result, droplets of the second liquid can be supplied to a wider area.

[0133] Alternatively, in S403, the moving mechanism 53 causes the second liquid nozzle 51 to reciprocate between the seventh and eighth positions. By reciprocating the second liquid nozzle 51, a sufficient amount of droplets of the second liquid can be supplied to a wider range. The reciprocating motion of the second liquid nozzle 51 can also be performed repeatedly. Alternatively, when the second liquid nozzle 51 reciprocates between the seventh and eighth positions, the rotation direction of the substrate W is reversed when the second liquid nozzle 51 reaches the eighth position.

[0134] Next, in S404, the holding part 2 holds the substrate DW horizontally inside the cup-shaped body 7, and the rotating part 3 rotates the substrate DW in the second direction RD2. The central nozzle 61 supplies pure water to the center of the upper surface DWa of the substrate DW. S404 is related to... Figure 9 The same process applies to S205 shown.

[0135] Next, in S405 to S408, the process is carried out with... Figure 9 The same process applies to S201 to S204 shown.

[0136] Next, in S409, the holding part 2 holds the substrate DW horizontally inside the cup-shaped body 7, and the rotating part 3 rotates the substrate DW in the first direction RD1 to remove the pure water remaining on the substrate DW and dry the substrate DW. After that, the conveying device takes the substrate DW from the holding part 2 and sends it to the outside of the processing container 11.

[0137] In this modified example, the central nozzle 61 corresponds to the first nozzle described in the technical solution, the first chemical nozzle 41 corresponds to the second nozzle described in the technical solution, and the second chemical nozzle 51 corresponds to the third nozzle described in the technical solution. Furthermore, in this modified example, pure water corresponds to the first treatment liquid, the first chemical liquid corresponds to the second treatment liquid, and the second chemical liquid corresponds to the third treatment liquid. The order of S401 to S408 is not limited. Figure 15 The order, for example, the order of S401~S404 and S405~S408 can also be reversed.

[0138] Alternatively, the central nozzle 61 can also discharge a second solution instead of pure water in S401 to S403. In the latter case, the liquid streams of the second solution collide with each other, thus suppressing the decrease in the concentration of the second solution and efficiently dissolving the deposit D.

[0139] Alternatively, the central nozzle 61 can discharge the first solution instead of pure water in S405 to S407. In the latter case, the liquid streams of the first solution collide with each other, thus suppressing the decrease in the concentration of the first solution and efficiently dissolving the deposit D.

[0140] The central nozzle 61 for discharging the first chemical solution and the central nozzle 61 for discharging the second chemical solution can also be provided separately to prevent salt precipitation caused by the neutralization reaction. In this case, for example, the central nozzle 61 for discharging the first chemical solution corresponds to the first nozzle described in the technical solution, the first chemical solution nozzle 41 corresponds to the second nozzle described in the technical solution, the central nozzle 61 for discharging the second chemical solution corresponds to the third nozzle described in the technical solution, and the second chemical solution nozzle 51 corresponds to the fourth nozzle described in the technical solution. Furthermore, in this case, the first chemical solution corresponds to the first and second treatment solutions, and the second chemical solution corresponds to the third and fourth treatment solutions.

[0141] The cleaning method for the cup-shaped body of the substrate processing apparatus of the present invention and the embodiments of the substrate processing apparatus have been described above, but the present invention is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations can be made within the scope of the technical solutions described herein. These, of course, also fall within the scope of the present invention.

[0142] This application claims priority based on Japanese Patent Application No. 2020-081376, filed with the Japan Patent Office on May 1, 2020, and the entire contents of Japanese Patent Application No. 2020-081376 are incorporated herein by reference.

[0143] Explanation of reference numerals in the attached figures

[0144] 1 Substrate Processing Device

[0145] 2. Maintaining section

[0146] 3 Rotating part

[0147] 31 rotating axis

[0148] 4-liquid supply unit

[0149] 41 First liquid nozzle

[0150] 42 First Pure Water Nozzle

[0151] 51 Second liquid nozzle

[0152] 52 Second Pure Water Nozzle

[0153] 61 Central Nozzle

[0154] 7 cups

[0155] W substrate

[0156] Wa on the surface.

Claims

1. A method for cleaning a cup-shaped body of a substrate processing apparatus, wherein, The substrate processing apparatus includes: a holding portion that horizontally holds a substrate; a rotating portion that rotates the holding portion about a vertical rotation axis; a liquid supply unit that supplies liquid to the upper surface of the substrate held by the holding portion; and a cup-shaped body that surrounds the periphery of the substrate held by the holding portion and receives the liquid that spills from the periphery of the substrate. The cleaning method is characterized by having: The step of cleaning the cup-shaped body involves holding the substrate horizontally inside the cup-shaped body and rotating the substrate in a first direction around a vertical axis of rotation, supplying a first treatment liquid from a first nozzle to the center of the upper surface of the substrate, and supplying a second treatment liquid from a second nozzle to the periphery of the upper surface of the substrate. The step of cleaning the cup-shaped body involves supplying the first treatment liquid from the first nozzle to the center of the upper surface of the substrate and supplying the second treatment liquid from the second nozzle to the periphery of the upper surface of the substrate while the substrate is rotated about the rotation axis in a second direction opposite to the first direction; and During the process of discharging the second treatment liquid from the second nozzle, the step of moving the second nozzle radially on the substrate between a first position and a second position, wherein the first position is the position where the jet line of the second nozzle reaches the periphery of the upper surface of the substrate, and the second position is the position where the jet line of the second nozzle deviates from the substrate. The jet line from the second nozzle, when viewed from above, includes a component radially outward toward the substrate and a component toward the first direction. The relative velocity between the second processing liquid and the substrate when the substrate is rotating in the first direction is greater than the relative velocity between the second processing liquid and the substrate when the substrate is rotating in the second direction.

2. The cleaning method according to claim 1, characterized in that: During the movement of the second nozzle between the first position and the second position, the second processing liquid is supplied from the second nozzle to the inclined portion of the substrate.

3. The cleaning method according to claim 1 or 2, characterized in that: During the process of discharging the second treatment liquid from the second nozzle, the second nozzle is moved back and forth between the first position and the second position.

4. The cleaning method according to claim 1 or 2, characterized in that: With the second nozzle fixed in the first position, the discharge of the second treatment liquid by the second nozzle is carried out intermittently.

5. The cleaning method according to claim 1 or 2, characterized in that: It includes a step of preheating the first treatment liquid discharged from the first nozzle.

6. The cleaning method according to claim 1 or 2, characterized in that: It includes a step of preheating the second treatment liquid discharged from the second nozzle.

7. The cleaning method according to claim 1 or 2, characterized in that: The first treatment solution is pure water or an alkaline solution, and the second treatment solution is an alkaline solution. Alternatively, the first treatment solution is pure water or an acidic solution, and the second treatment solution is an acidic solution. Alternatively, both the first and second treatment solutions are pure water.

8. The cleaning method according to claim 1 or 2, characterized in that: The method comprises the steps of supplying a first processing liquid from a first nozzle to the center of the upper surface of the substrate, and supplying a third processing liquid from a third nozzle to the periphery of the upper surface of the substrate, while the substrate is rotated in the second direction about the rotation axis. The jet line of the third nozzle, when viewed from above, includes a component that is radially outward toward the substrate and a component that is toward the second direction.

9. The cleaning method according to claim 8, characterized in that: The third nozzle is positioned radially on the substrate during the discharge of the third treatment liquid from the third nozzle, between a position where the jet line of the third nozzle reaches the periphery of the upper surface of the substrate and a position where the jet line of the third nozzle deviates from the substrate.

10. The cleaning method according to claim 8, characterized in that: The method comprises supplying a first processing liquid from a first nozzle to the center of the upper surface of the substrate while the substrate is rotated about the rotation axis in the first direction, and supplying a third processing liquid from a third nozzle to the periphery of the upper surface of the substrate.

11. The cleaning method according to claim 8, characterized in that: The first treatment solution is pure water, one of the second and third treatment solutions is an alkaline solution, and the other of the second and third treatment solutions is an acidic solution. Alternatively, the first treatment solution, the second treatment solution, and the third treatment solution may all be pure water.

12. The cleaning method according to claim 1 or 2, characterized in that: The method includes the steps of supplying a third processing liquid from a third nozzle to the center of the upper surface of the substrate, and supplying a fourth processing liquid from a fourth nozzle to the periphery of the upper surface of the substrate, while the substrate is rotated in the second direction about the rotation axis. The jet line of the fourth nozzle, when viewed from above, includes a component radially outward toward the substrate and a component toward the second direction. The first and second treatment solutions are both alkaline solutions, while the third and fourth treatment solutions are both acidic solutions. Alternatively, the first and second treatment solutions are both acidic solutions, and the third and fourth treatment solutions are both alkaline solutions.

13. A substrate processing apparatus, characterized in that, include: The substrate holding portion is held horizontally; A rotating part that allows the holding part to rotate about a vertical rotation axis; A liquid supply unit that supplies liquid to the upper surface of the substrate held by the holding portion; A cup-shaped body surrounds the periphery of the substrate held by the retaining part and catches the liquid that spills from the periphery of the substrate; as well as The control unit that controls the rotating part and the liquid supply unit The liquid supply unit includes: a first nozzle that supplies a first processing liquid to the center of the upper surface of the substrate; a second nozzle that supplies a second processing liquid to the periphery of the upper surface of the substrate; and a moving mechanism that moves the second nozzle radially on the substrate. The control unit implements: While the substrate is held horizontally inside the cup-shaped body and rotated in a first direction about a vertical axis of rotation, the first treatment liquid is supplied from the first nozzle to the center of the upper surface of the substrate, and the second treatment liquid is supplied from the second nozzle to the periphery of the upper surface of the substrate to clean the cup-shaped body. While the substrate is rotated about the rotation axis in a second direction opposite to the first direction, the first treatment liquid is supplied from the first nozzle to the center of the upper surface of the substrate, and the second treatment liquid is supplied from the second nozzle to the periphery of the upper surface of the substrate to clean the cup-shaped body. and During the discharge of the second treatment liquid from the second nozzle, the process involves moving the second nozzle radially across the substrate between a first position and a second position. The first position is where the jet line of the second nozzle reaches the periphery of the upper surface of the substrate, and the second position is where the jet line of the second nozzle deviates from the substrate. The jet line from the second nozzle, when viewed from above, includes a component radially outward toward the substrate and a component toward the first direction. The relative velocity between the second processing liquid and the substrate when the substrate is rotating in the first direction is greater than the relative velocity between the second processing liquid and the substrate when the substrate is rotating in the second direction.

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