Display substrate and manufacturing method thereof, and display device

Abstract

A display substrate and a manufacturing method thereof, and a display device. The display substrate includes: a base substrate, an organic light-emitting element located on the base substrate, a data line, and an electrode line. The organic light-emitting element includes a first electrode, a light-emitting layer, and a second electrode stacked in sequence in a direction perpendicular to the base substrate, and the second electrode is located on the side of the light-emitting layer facing the base substrate; the data line is located between the base substrate and the organic light-emitting element and extends along a first direction; the electrode line is arranged in the same layer as the data line and is located in a region outside the light-emitting region of the organic light-emitting element. The display substrate also includes at least one connecting portion, which is located in a region outside the light-emitting region and is configured to connect the electrode line to the first electrode, the connecting portion is separated from the second electrode, and the light-emitting layer covers the second electrode and the at least one connecting portion. The embodiment of the present disclosure can effectively reduce the resistance of the first electrode by arranging a connecting portion in the display substrate to connect the electrode line and the first electrode of the organic light-emitting element.

Description

Technical Field

[0001] At least one embodiment of the present disclosure relates to a display substrate and a manufacturing method thereof, and a display device. Background Art

[0002] At present, transparent display products include top-emitting organic light-emitting diodes, in which the transparent cathode is set thinner to improve the transparency. Transparent display products have significant advantages such as clear image quality and realistic display effects, and can be widely used in on-board displays such as cars and subways, and window displays such as hotels and clothing stores. Summary of the invention

[0003] At least one embodiment of the present disclosure provides a display substrate and a manufacturing method thereof, and a display device.

[0004] At least one embodiment of the present disclosure provides a display substrate, comprising: a base substrate, and a plurality of organic light-emitting elements, data lines, and electrode lines located on the base substrate. Each of the organic light-emitting elements comprises a first electrode, a light-emitting layer, and a second electrode stacked in sequence in a direction perpendicular to the base substrate, wherein the second electrode is located on a side of the light-emitting layer facing the base substrate; the data line is located between the base substrate and the organic light-emitting element and extends in a first direction; the electrode line is arranged in the same layer as the data line and is located in an area outside the light-emitting area of ​​the organic light-emitting element. The display substrate also includes at least one connecting portion, which is located in an area outside the light-emitting area and is configured to connect the electrode line to the first electrode, the connecting portion is separated from the second electrode, and the light-emitting layer covers the second electrode and the at least one connecting portion.

[0005] For example, in the embodiment of the present disclosure, the light emitting layer is disconnected at the side edge of the connecting portion, and the first electrode is connected to the connecting portion through a gap at the disconnected portion of the light emitting layer.

[0006] For example, in an embodiment of the present disclosure, the first electrode is a transparent electrode, and the connecting portion includes a first conductive layer and a second conductive layer which are stacked in a direction perpendicular to the base substrate and have different materials, and the first conductive layer is located on a side of the second conductive layer away from the base substrate; along a second direction intersecting with the first direction and parallel to the base substrate, a size of the first conductive layer is larger than a size of the second conductive layer, the light-emitting layer is disconnected at a side edge of the first conductive layer, and the first electrode is connected to the connecting portion through a gap at the disconnection of the light-emitting layer.

[0007] For example, in an embodiment of the present disclosure, the connecting portion also includes a third conductive layer located on the side of the second conductive layer facing the base substrate, the material of the third conductive layer is different from the material of the second conductive layer, and the first electrode is at least partially connected to a portion of the surface of the third conductive layer away from the base substrate that is not covered by the second conductive layer.

[0008] For example, in the embodiment of the present disclosure, along the second direction, the size of the third conductive layer is larger than the size of the second conductive layer.

[0009] For example, in the embodiment of the present disclosure, along the second direction, the size of the third conductive layer is larger than the size of the first conductive layer.

[0010] For example, in the embodiment of the present disclosure, the first electrode is connected to a surface of the third conductive layer away from the base substrate and a side surface of the second conductive layer.

[0011] For example, in an embodiment of the present disclosure, the connecting portion also includes a fourth film layer located between the first conductive layer and the second conductive layer, and the material of the fourth film layer is different from the materials of the second conductive layer and the first conductive layer; along the second direction, the size of the fourth film layer is not larger than the size of the first conductive layer, and is larger than the size of the second conductive layer.

[0012] For example, in the embodiment of the present disclosure, the fourth film layer is a conductive layer, and along the second direction, the size of the fourth film layer is smaller than the size of the first conductive layer.

[0013] For example, in the embodiment of the present disclosure, the thickness of the fourth film layer is not less than 1 / 2 of the thickness of the first conductive layer.

[0014] For example, in the embodiment of the present disclosure, along a direction perpendicular to the base substrate, the second conductive layer overlaps with the middle region of the first conductive layer, and along the second direction, the difference between the size of the first conductive layer and the size of the second conductive layer ranges from 0.6 to 4 microns.

[0015] For example, in an embodiment of the present disclosure, along a direction perpendicular to the base substrate, the thickness of the second conductive layer is greater than the thickness of the light emitting layer.

[0016] For example, in the embodiment of the present disclosure, the display substrate further includes: an insulating layer located between the third conductive layer and the electrode line. The insulating layer is provided with a via hole, and the third conductive layer is connected to the electrode line through the via hole.

[0017] For example, in an embodiment of the present disclosure, the second electrode of the organic light-emitting element includes at least two electrode layers, and the first conductive layer and the second conductive layer are respectively provided in the same layer as two electrode layers in the second electrode and are insulated.

[0018] For example, in the embodiment of the present disclosure, the display substrate further includes: a pixel defining layer including a plurality of openings to define the plurality of light-emitting areas, the light-emitting layer covers the pixel defining layer and the plurality of openings. The pixel defining layer is disposed between the second electrode and the connecting portion, and a certain distance is disposed between the first conductive layer and the pixel defining layer along the second direction.

[0019] For example, in the embodiment of the present disclosure, along a direction perpendicular to the base substrate, an edge portion of the third conductive layer overlaps with the pixel defining layer.

[0020] For example, in the embodiment of the present disclosure, the display substrate further includes: a gate line extending along the second direction and located between the data line and the base substrate. The electrode line extends along the first direction, and the width of the portion where the electrode line overlaps with the gate line is smaller than the width of the portion where the electrode line does not overlap with the gate line.

[0021] At least one embodiment of the present disclosure provides a display device, comprising any of the above-mentioned display substrates.

[0022] At least one embodiment of the present disclosure provides a method for manufacturing a display substrate, comprising: forming a metal layer on a base substrate and patterning it to form a data line and an electrode line extending in a first direction; forming an insulating layer on the data line; forming a conductive film on a side of the insulating layer away from the base substrate and patterning it to form a second electrode located in a light-emitting area and at least one connecting portion located in a non-light-emitting area; forming a light-emitting layer on a side of the second electrode away from the base substrate, wherein the light-emitting layer covers the second electrode and the connecting portion; forming a first electrode on a side of the light-emitting layer away from the base substrate. The display substrate comprises an organic light-emitting element located in the light-emitting area, the organic light-emitting element comprising the first electrode, the light-emitting layer and the second electrode stacked in a direction perpendicular to the base substrate; the connecting portion is configured to connect the electrode line with the first electrode.

[0023] For example, in an embodiment of the present disclosure, forming the connecting portion includes forming a first conductive layer and a second conductive layer that are stacked and have different materials, wherein the first conductive layer is located on a side of the second conductive layer away from the base substrate, and along a second direction intersecting the first direction and parallel to the base substrate, a size of the first conductive layer is larger than a size of the second conductive layer; the light-emitting layer formed on the first conductive layer is disconnected at the side edge of the first conductive layer so that the first electrode is connected to the connecting portion through a gap at the disconnection of the light-emitting layer.

[0024] For example, in the embodiment of the present disclosure, forming the connection portion further includes forming a third conductive layer before forming the second conductive layer. Forming the second electrode and the connection portion includes: patterning the insulating layer to form a via hole exposing the electrode line; forming a first conductive film on the side of the insulating layer away from the base substrate, the first conductive film being connected to the electrode line through the via hole; patterning the first conductive film to form a first electrode layer located in the light-emitting area and a third conductive layer located in the non-light-emitting area, wherein the material of the third conductive layer is different from the material of the second conductive layer, and the third conductive layer is connected to the electrode line through the via hole, and a second conductive film and a third conductive film are sequentially formed on the side of the first conductive film away from the base substrate; patterning the second conductive film and the third conductive film to form the second electrode layer and the third electrode layer located in the light-emitting area, and the first conductive layer and the second conductive layer located in the non-light-emitting area. The second electrode includes the first electrode layer, the second electrode layer and the third electrode layer, and the first electrode is at least partially connected to a portion of the surface of the third conductive layer away from the base substrate that is not covered by the second conductive layer.

[0025] For example, in the embodiment of the present disclosure, patterning the second conductive film and the third conductive film includes: wet etching the third conductive film to form the second electrode layer and the first conductive layer, and wet etching the second conductive film to form the third electrode layer and the second conductive layer. The etching amount of the second conductive layer is greater than the etching amount of the first conductive layer so that the size of the first conductive layer in the second direction is greater than the size of the second conductive layer in the second direction.

[0026] For example, in the embodiment of the present disclosure, forming the light-emitting layer includes: evaporating a light-emitting layer material on the first conductive layer, wherein the light-emitting layer material evaporated on the side edge of the first conductive layer is disconnected to form the light-emitting layer including the gap. Forming the first electrode includes: depositing the first electrode on the light-emitting layer by sputtering so that the first electrode is connected to at least the third conductive layer through the gap.

[0027] For example, in the embodiment of the present disclosure, after forming the second conductive film and before forming the third conductive film, the method further includes: forming a fourth film layer material on the second conductive film, the fourth film layer material being different from the materials of the second conductive film and the third conductive film. After patterning the third conductive film, the method further includes: patterning the second conductive film and the fourth film layer material simultaneously or separately to form the second conductive layer and the fourth film layer, wherein, along the second direction, the size of the fourth film layer is not greater than the size of the first conductive layer, and greater than the size of the second conductive layer.

[0028] For example, in an embodiment of the present disclosure, simultaneously patterning the second conductive film and the fourth film layer material includes: using the same etching solution to simultaneously etch the second conductive film and the fourth film layer material, wherein the etching rate of the etching solution on the second conductive film is greater than the etching rate of the fourth film layer material so that the size of the fourth film layer is larger than the size of the second conductive layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only relate to some embodiments of the present disclosure, but are not intended to limit the present disclosure.

[0030] Figure 1 A schematic diagram of a partial cross-sectional structure of a display substrate provided according to an embodiment of the present disclosure;

[0031] Figure 2 A schematic diagram of a partial planar structure of a display substrate provided according to an embodiment of the present disclosure;

[0032] Figure 3 and Figure 4 They are Figure 1 Different exemplary views of partial magnified views of the display substrate are shown;

[0033] Figure 5 It is a schematic diagram of a partial cross-sectional structure of a display substrate;

[0034] Figure 6 A schematic diagram of a partial cross-sectional structure of a display substrate provided according to another example of an embodiment of the present disclosure;

[0035] Figure 7 for Figure 2 The schematic diagram of the local structure of the display substrate is shown;

[0036] Figure 8 A circuit diagram of a pixel circuit is schematically shown;

[0037] Fig. 9 Shown include Figure 8 A pixel layout of the pixel circuit shown;

[0038] Fig.10 A schematic flow chart of a method for manufacturing a display substrate according to an embodiment of the present disclosure; and

[0039] Figure 11-Figure 16 Based on Fig.10 Production process diagram of the flow chart shown. DETAILED DESCRIPTION

[0040] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0041] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The words "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. The words "include" or "comprise" and similar words mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0042] During the research, the inventor of the present application found that in order to improve the transparency of large-sized transparent display products, the thickness of the cathode of the organic light-emitting diode is set to be very thin. For example, the material of the cathode can be indium zinc oxide (IZO), but setting the thickness of the cathode to be thinner will lead to a larger resistance of the cathode, which in turn leads to a large voltage drop (IR drop) problem in large-sized transparent display products. One solution includes overlapping the above-mentioned cathode with an auxiliary cathode located on the backplane to reduce the IR drop problem, but how to overlap the cathode of the organic light-emitting diode with the auxiliary cathode on the backplane without increasing the backplane process is a difficult process.

[0043] The embodiments of the present disclosure provide a display substrate and a manufacturing method thereof, and a display device. The display substrate includes: a base substrate, an organic light-emitting element located on the base substrate, a data line, and an electrode line. The organic light-emitting element includes a first electrode, a light-emitting layer, and a second electrode stacked in sequence in a direction perpendicular to the base substrate, and the second electrode is located on the side of the light-emitting layer facing the base substrate; the data line is located between the base substrate and the organic light-emitting element and extends along the first direction; the electrode line is arranged in the same layer as the data line and is located in an area outside the light-emitting area of ​​the organic light-emitting element. The display substrate also includes at least one connecting portion, which is located in an area outside the light-emitting area and is configured to connect the electrode line to the first electrode, the connecting portion is separated from the second electrode, and the light-emitting layer covers the second electrode and the at least one connecting portion. The embodiments of the present disclosure can effectively reduce the resistance of the first electrode by setting a connecting portion in the display substrate to connect the electrode line and the first electrode of the organic light-emitting element, thereby effectively alleviating the IR drop problem generated by the first electrode.

[0044] The display substrate and its manufacturing method, and the display device provided by the embodiments of the present disclosure are described below with reference to the accompanying drawings.

[0045] Figure 1 is a schematic diagram of a partial cross-sectional structure of a display substrate provided according to an embodiment of the present disclosure, Figure 2 It is a schematic diagram of a partial planar structure of a display substrate provided according to an embodiment of the present disclosure. Figure 1 Schematically showing the Figure 2 The local section cut by the AA line. Figure 1 and Figure 2 As shown, the display substrate includes a base substrate 100. A plurality of organic light-emitting elements 200 are arranged on the base substrate 100. The organic light-emitting element 200 includes a first electrode 210, a light-emitting layer 230, and a second electrode 220 which are sequentially stacked in a direction perpendicular to the base substrate 100 (the Z direction in the figure). The second electrode 220 is located on the side of the light-emitting layer 230 facing the base substrate 100, and the first electrode 210 is located on the side of the light-emitting layer 230 away from the base substrate 100. The data line 300 is located between the base substrate 100 and the organic light-emitting element 200, and extends along a first direction (the X direction in the figure). The data line 300 and Figure 1The first electrode 42 (one of the source and the drain) and the second electrode 43 (the other of the source and the drain) of the thin film transistor 40 shown have a portion of the film layer located on the interlayer insulating layer 13 that is the same layer. The electrode line 400 is arranged in the same layer as the data line 300 and is located in an area (e.g., a non-luminous area) outside the light-emitting area 20 of the organic light-emitting element 200. The display substrate also includes at least one connecting portion 500, which is located in an area outside the light-emitting area 20 and is configured to connect the electrode line 400 and the first electrode 210. The connecting portion 500 is separated from the second electrode 220, and the light-emitting layer 230 covers the second electrode 220 and the connecting portion 500. The embodiment of the present disclosure can effectively reduce the resistance of the first electrode by providing a connecting portion in the display substrate to connect the electrode line and the first electrode of the organic light-emitting element, thereby effectively alleviating the IR drop problem generated by the first electrode.

[0046] For example, Figure 1 and Figure 2 As shown, the organic light emitting element 200 may be a top-emitting organic light emitting diode, and the first electrode 210 and the second electrode 220 may be respectively the cathode and the anode of the organic light emitting element 200. For example, the first electrode 210 is a transparent electrode, and the material of the first electrode 210 may be indium zinc oxide (IZO). For example, the thickness of the first electrode 210 may be set to be relatively thin to improve light transmittance.

[0047] For example, Figure 1 As shown, the portion where the first electrode 210, the light-emitting layer 230 and the second electrode 220 in the organic light-emitting element 200 are in contact with each other can drive the light-emitting layer 230 to emit light. Therefore, the portion where the first electrode 210, the light-emitting layer 230 and the second electrode 220 are in contact with each other is the effective portion where the organic light-emitting element 200 can emit light, forming a light-emitting area 20.

[0048] For example, the light-emitting layer here may include the electroluminescent layer itself and other functional layers located on both sides of the electroluminescent layer, such as a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer.

[0049] For example, Figure 1 As shown, the connection part 500 includes a first conductive layer 510 and a second conductive layer 520 of different materials stacked in a direction perpendicular to the base substrate 100, and the first conductive layer 510 is located on a side of the second conductive layer 520 away from the base substrate 100. Along a second direction (the Y direction in the figure) intersecting the first direction and parallel to the base substrate 100, the size of the first conductive layer 510 is larger than that of the second conductive layer 520, the light-emitting layer 230 is disconnected at the side edge of the first conductive layer 510, and the first electrode 210 is connected to the connection part 500 through the gap 231 at the disconnection of the light-emitting layer 230.

[0050] For example, Figure 1 As shown, the orthographic projection of the second conductive layer 520 on the base substrate 100 is completely located within the orthographic projection of the first conductive layer 510 on the base substrate 100 .

[0051] For example, Figure 1 As shown, the orthographic projections of the first conductive layer 510 and the second conductive layer 520 on the base substrate 100 fall within the orthographic projection of the light emitting layer 230 located on the first conductive layer 510 on the base substrate 100 .

[0052] For example, Figure 1 and Figure 2 As shown, the embodiment of the present disclosure schematically shows that the first direction is perpendicular to the second direction, but is not limited thereto. The first direction and the second direction may not be perpendicular to each other. The first direction and the second direction may be interchangeable.

[0053] For example, Figure 1 and Figure 2 As shown, along the Y direction, the length of the first conductive layer 510 is greater than the length of the second conductive layer 520, so that a protruding sharp corner is formed at the upper end side edge of the connecting part 500 away from the base substrate 100, and the sharp corner cuts off the light-emitting layer 230 located at the side edge of the first conductive layer 510, so that the light-emitting layer 230 located on the first conductive layer 510 is disconnected at the side of the first conductive layer 510 to form a gap 231, and the gap 231 can expose a part of the connecting part 500 covered by the light-emitting layer 230, that is, the gap 231 makes the connecting part 500 not completely covered or wrapped by the light-emitting layer 230, so that the first electrode 210 can be connected to the connecting part 500 through the gap 231, thereby realizing the connection between the first electrode 210 and the electrode line 400, and effectively reducing the resistance of the first electrode.

[0054] For example, Figure 1 As shown, the first electrode 210 passing through the slit 231 of the light emitting layer 230 may extend to the inner side of the lower portion of the first conductive layer 510 to connect with the connecting portion 500. For example, along a direction perpendicular to the base substrate 100, the first electrode 210 may overlap with the first conductive layer 510.

[0055] For example, the electrode line 400 can be called an auxiliary cathode line, which is used to electrically connect to the cathode of the organic light emitting element to reduce the resistance of the cathode. For example, the overall structure of the electrode line and the connecting part can be called an auxiliary cathode, which is used to electrically connect to the cathode of the organic light emitting element to reduce the resistance of the cathode.

[0056] For example, Figure 1 As shown, along the direction perpendicular to the base substrate 100, the second conductive layer 520 overlaps with the middle region of the first conductive layer 510, and along the second direction, the difference between the size of the first conductive layer 510 and the size of the second conductive layer 520 ranges from 0.6 to 4 microns.

[0057] For example, Figure 1 As shown, along the second direction, the sizes of the two edge portions of the first conductive layer 510 except for the overlapped portion with the second conductive layer 520 are substantially the same, that is, the length of the first conductive layer 510 extending out from one side can be 0.3 to 2 microns, for example, 0.4 to 1 micron, for example, 0.8 to 1.5 microns. By setting the size of the edge of the first conductive layer exceeding the edge of the second conductive layer to 0.3 to 2 microns, it can be ensured that the light-emitting layer at the side edge of the first conductive layer will be disconnected to form a gap.

[0058] For example, Figure 1 As shown, the display substrate further includes a pixel defining layer 30, which includes a plurality of openings 31 to define a plurality of light emitting regions 20. For example, along the second direction, the pixel defining layers on both sides of the connection portion may be symmetrically distributed, and the organic light emitting elements on both sides of the connection portion may be symmetrically distributed.

[0059] For example, Figure 1 As shown, the light-emitting layer 230 covers the pixel-defining layer 30 and a plurality of openings 31, and each opening 31 is configured to define the shape of the light-emitting region 20 of the organic light-emitting element 200. For example, the second electrode 220 (e.g., anode) of the organic light-emitting element 200 can be disposed between the pixel-defining layer 30 and the base substrate 100, and the pixel-defining layer 30 includes an opening 31 for defining, for example, a sub-pixel (including the above-mentioned organic light-emitting element), and the opening 31 exposes a portion of the second electrode 220. When the light-emitting layer 230 is formed in the opening 31 of the above-mentioned pixel-defining layer 30, the light-emitting layer 230 contacts the second electrode 220, so that this portion can drive the light-emitting layer 230 to emit light. Therefore, in this case, the opening 31 of the pixel-defining layer 30 defines the shape of the light-emitting region 20 of the sub-pixel.

[0060] For example, Figure 1 As shown, the pixel defining layer 30 is located between the second electrode 220 and the connection portion 500 to insulate the second electrode 220 and the connection portion 500 from each other.

[0061] For example, Figure 1 As shown, along the second direction, a certain distance is set between the first conductive layer 510 and the pixel defining layer 30. The light emitting layer 230 is located on the pixel defining layer 30 and the connecting portion 500. Since a certain distance is set between the first conductive layer and the pixel defining layer, and the length of the first conductive layer is greater than the length of the second conductive layer, a protruding sharp corner is formed at the upper side edge of the connecting portion, and the sharp corner cuts off the light emitting layer located at the side edge of the first conductive layer, so that a gap is formed between the light emitting layer and the pixel defining layer, and the first electrode deposited on the pixel defining layer and the first conductive layer can be connected to the connecting portion through the gap.

[0062] For example, the pixel defining layer 30 may have an inclined sidewall, and the spacing between the first conductive layer 510 and the pixel defining layer 30 is greater than the sum of the thickness of the portion of the light emitting layer 230 deposited on the sidewall of the pixel defining layer 30 and the thickness of the portion of the first electrode 210 deposited on the sidewall of the pixel defining layer 30.

[0063] For example, along a direction perpendicular to the base substrate 100 , the electrode line 400 may overlap with the pixel defining layer 30 , or may not overlap with the pixel defining layer 30 , which is not limited in the embodiment of the present disclosure.

[0064] For example, Figure 1 As shown, the thickness of the second conductive layer 520 is greater than the thickness of the light-emitting layer 230, so that after the light-emitting layer 230 is broken at the side edge of the first conductive layer 510, the light-emitting layer 230 not formed on the first conductive layer 510 will not be connected to the side edge of the first conductive layer 510, that is, the light-emitting layer 230 formed on the pixel defining layer 30 will not be connected to the side edge of the first conductive layer 510, thereby forming a gap in the light-emitting layer at the side edge of the first conductive layer.

[0065] For example, the thickness of the second conductive layer 520 may be 0.5-0.6 micrometers, and the thickness of the light emitting layer 230 is not greater than 0.5 micrometers, for example, 0.2-0.4 micrometers, for example, 0.3 micrometers.

[0066] For example, the first electrode 210 may be connected to the second conductive layer 520 through the slit 231 of the light emitting layer 230 .

[0067] For example, Figure 1 As shown, the second electrode 220 of the organic light-emitting element 200 includes at least two electrode layers, such as electrode layer 221 and electrode layer 222, and the first conductive layer 510 and the second conductive layer 520 of the connecting part 500 are respectively arranged in the same layer as the two electrode layers (such as electrode layer 221 and electrode layer 222) in the second electrode 220 and are insulated.

[0068] For example, the connecting portion 500 and the second electrode 220 can be formed using the same process step. For example, when the connecting portion 500 and the second electrode 220 both include multiple film layers, at least two film layers included in the connecting portion 500 can be formed using the same process step as the corresponding film layers included in the second electrode 220.

[0069] For example, Figure 1As shown, the electrode layer 221 is a film layer in the second electrode 220 that is in direct contact with the light-emitting layer 230. For example, the electrode layer 221 in the second electrode 220 and the first conductive layer 510 of the connecting portion 500 can be formed using the same material in the same patterning process. For example, the material of the electrode layer 221 and the first conductive layer 510 can be indium tin oxide (ITO) or indium tin oxide alloy.

[0070] For example, Figure 1 As shown, the electrode layer 222 is a reflective layer in the second electrode 220. The electrode layer 222 in the second electrode 220 and the second conductive layer 520 of the connecting portion 500 can be formed by the same material in the same patterning process. For example, the material of the electrode layer 222 and the second conductive layer 520 can be a metal layer such as aluminum or silver.

[0071] The display substrate provided by the embodiment of the present disclosure can form a connecting portion connecting the first electrode and the electrode line without adding any additional manufacturing process for the display substrate. For example, the first electrode can be overlapped with the auxiliary cathode of the backplane without adding any additional backplane process for the display substrate. This can not only save process but also greatly reduce the IR drop problem of the first electrode, thereby improving the performance and display quality of the display substrate.

[0072] For example, Figure 1 As shown, according to an example of an embodiment of the present disclosure, the connection portion 500 further includes a third conductive layer 530 located on the side of the second conductive layer 520 facing the base substrate 100, the material of the third conductive layer 530 is different from the material of the second conductive layer 520, and the first electrode 210 is at least partially connected to the portion of the third conductive layer 530 that is not covered by the second conductive layer 520. In the embodiment of the present disclosure, the first electrode is connected to the electrode line by at least connecting the first electrode to the third conductive layer of the connection portion.

[0073] For example, Figure 1 As shown, the second electrode 220 of the organic light-emitting element 200 includes three conductive layers, such as an electrode layer 221, an electrode layer 222, and an electrode layer 223. The first conductive layer 510, the second conductive layer 520, and the third conductive layer 530 of the connecting portion 500 are respectively arranged in the same layer as the electrode layer 221, the electrode layer 222, and the electrode layer 223 of the second electrode 220 and are insulated. For example, the electrode layer 223 in the second electrode 220 and the third conductive layer 530 of the connecting portion 500 can be formed by using the same material in the same patterning process. For example, the material of the electrode layer 223 and the third conductive layer 530 can be indium tin oxide (ITO) or indium tin oxide alloy, or other conductive materials. The embodiments of the present disclosure are not limited to this. For example, when the connecting portion includes the above-mentioned three conductive layers, the second electrode can also include only two electrode layers (such as Figure 1 The electrode layers 221 and 222).

[0074] For example, Figure 1 As shown, along the direction perpendicular to the base substrate 100 , the edge portion of the third conductive layer 530 overlaps with the pixel defining layer 30 , so that the gap of the light emitting layer can expose a larger portion of the third conductive layer.

[0075] For example, Figure 1 As shown, the display substrate includes an insulating layer between the third conductive layer 530 and the electrode line 400 , for example, including a passivation layer 15 and a planarization layer 16 . Figure 1 The insulating layer schematically shows that it includes a passivation layer and a planar layer, and the planar layer is located on the side of the passivation layer away from the substrate. However, it is not limited thereto, the positions of the passivation layer and the planar layer in the insulating layer can be interchanged, or the insulating layer can also include only the planar layer without the passivation layer.

[0076] For example, Figure 1 As shown, a via 156 is provided in the insulating layer, and the third conductive layer 530 is connected to the electrode line 400 through the via 156. Figure 1 As shown, the via 156 in the insulating layer may include vias in the planarization layer 16 and the passivation layer 15 . Figure 1 It is schematically shown that when the connecting portion includes a third conductive layer, the third conductive layer is connected to the electrode line through a via, but not limited to this, when the connecting portion only includes a first conductive layer and a second conductive layer, the second conductive layer can be connected to the electrode line through a via in the insulating layer.

[0077] For example, in a direction perpendicular to the base substrate 100 , the via 156 in the insulating layer may overlap with the first conductive layer 510 and the second conductive layer 520 , or may not overlap with the first conductive layer 510 and the second conductive layer 520 , which is not limited in the present embodiment.

[0078] For example, in a direction perpendicular to the base substrate 100 , the electrode line 400 may overlap with the first conductive layer 510 and the second conductive layer 520 , or may not overlap with the first conductive layer 510 and the second conductive layer 520 , which is not limited in the present embodiment.

[0079] Figure 3 and Figure 4 They are Figure 1 The following are different examples of partial magnified views of the substrate. Figure 3 As shown, the first electrode 210 is connected to the surface of the third conductive layer 530 away from the base substrate 100 and the side surface of the second conductive layer 520. For example, the first electrode 210 may completely wrap the side surface of the second conductive layer 520, or may be connected to only a portion of the side surface of the second conductive layer 520, which is not limited in the embodiment of the present disclosure.

[0080] For example, Figure 3 As shown, along the second direction, the size of the third conductive layer 530 is greater than the size of the second conductive layer 520. For example, the second conductive layer 520 may be located in the central area of ​​the third conductive layer 530 so that the size of the area of ​​the edge portion of the third conductive layer 530 that is not covered by the second conductive layer 520 along the second direction is approximately equal.

[0081] For example, Figure 3 As shown, along the second direction, the size of the third conductive layer 530 is larger than that of the first conductive layer 510, so that the first electrode is more easily connected to the third conductive layer through the gap of the light-emitting layer.

[0082] For example, Figure 3 As shown, the light emitting layer 230 formed on the first conductive layer 510 can cover the side edge of the first conductive layer 510 while being intercepted by the side edge of the first conductive layer 510, but is not limited thereto. The side edge of the light emitting layer can also be flush with the side edge of the first conductive layer.

[0083] For example, Figure 3 As shown, the light emitting layer 230 formed on the pixel defining layer 30 may extend toward the central region of the third conductive layer 530, that is, in a direction perpendicular to the substrate, the light emitting layer 230 formed on the pixel defining layer 30 may overlap with the first conductive layer 210, but this portion of the light emitting layer 230 does not completely cover the portion of the third conductive layer 530 not covered by the second conductive layer 520, so that the first electrode 210 may be connected to the portion of the third conductive layer 530 not covered by the light emitting layer 230 and the second conductive layer 520. However, this is not limited to this, and this portion of the light emitting layer may also completely cover the portion of the third conductive layer not covered by the second conductive layer, in which case the first electrode needs to be connected to the side surface of the second conductive layer.

[0084] For example, Figure 3 The cross-sectional shape of the second conductive layer 520 is schematically shown as a rectangle, but is not limited thereto. The cross-sectional shape of the second conductive layer 520 may be a trapezoid, so that the first electrode 210 can be easily connected to the side surface of the second conductive layer 520 while covering the side surface of the third conductive layer 530 away from the substrate.

[0085] For example, Figure 4 The examples shown are similar to Figure 3The difference between the shown example is that the first electrode 210 is only connected to the surface of the third conductive layer 530 away from the base substrate, and is not connected to the side surface of the second conductive layer 520. At this time, the light-emitting layer 230 formed on the pixel defining layer 30 may overlap with the first conductive layer 210 in a direction perpendicular to the base substrate, or may not overlap, and this part of the light-emitting layer 230 cannot completely cover the part of the third conductive layer 530 not covered by the second conductive layer 520, so that the first electrode 210 can be connected to the third conductive layer 530.

[0086] During the study, the inventors of the present application also found that: in order to match the luminous efficiency and viewing angle bias of the organic light-emitting device, the thickness of the second electrode 220 is relatively thin (that is, the thickness of the first conductive layer 510 is relatively thin), for example, the thickness of the second electrode 220 can be about 900 angstroms. In order to allow the first conductive layer 510 to smoothly cut off the light-emitting layer 230, it is generally necessary to set the tip of the first conductive layer 510 relative to the edge extending from the second conductive layer 520 to be relatively large (for example, not less than 0.8 microns). However, at this time, the first conductive layer 510 is prone to breakage. For example, when the thickness of the first conductive layer 510 is relatively thin, and the edges on both sides of the first conductive layer 510 are longer than the edges on both sides of the second conductive layer 520, the following may occur: Figure 5 As shown in the figure, the side edge of the first conductive layer 510 cannot cut off the light-emitting layer 230 subsequently formed on the first conductive layer 510, resulting in the first electrode 210 subsequently formed on the light-emitting layer 230 being unable to connect to the connecting portion 500 through the gap, and the first electrode 210 being unable to connect to the electrode line.

[0087] Figure 6 FIG. 1 is a schematic diagram of a partial cross-sectional structure of a display substrate provided according to another example of an embodiment of the present disclosure. Figure 6 As shown, the connection part 500 further includes a fourth film layer 540 located between the first conductive layer 510 and the second conductive layer 520, and the material of the fourth film layer 540 is different from the materials of the second conductive layer 520 and the first conductive layer 510; along the second direction, the size of the fourth film layer 540 is not larger than the size of the first conductive layer 510, and larger than the size of the second conductive layer 520. In the embodiment of the present disclosure, by providing the fourth film layer between the first conductive layer and the second conductive layer, the first conductive layer can be supported, and the edges of both sides of the first conductive layer can be prevented from being broken, thereby ensuring that the first electrode can be connected to the connection part.

[0088] For example, Figure 6As shown, the fourth film layer 540 may be a conductive layer, for example, the material of the fourth film layer 540 may be a metal such as titanium or silver. For example, along the second direction, the size of the fourth film layer 540 is smaller than the size of the first conductive layer 510. Of course, the embodiment of the present disclosure is not limited to the fourth film layer being a conductive layer, and the fourth film layer may also be a non-conductive layer, for example, the material of the fourth film layer may be a non-conductive material such as silicon nitride.

[0089] For example, Figure 6 As shown, along the second direction, the difference between the size of the fourth film layer 540 and the size of the second conductive layer 520 is in the range of 0.6 to 4 microns. For example, along the second direction, the sizes of the two edge portions of the fourth film layer 540 except for the overlapped portion with the second conductive layer 520 are substantially the same, that is, the single-side extended length of the fourth film layer 540 (relative to the second conductive layer 520) can be 0.3 to 2 microns, for example, 0.4 to 0.8 microns, for example, 0.3 to 1.6 microns. For example, along the second direction, the difference between the size of the fourth film layer 540 and the size of the first conductive layer 510 is in the range of 0.3 to 2 microns.

[0090] The embodiment of the present disclosure can ensure that the light-emitting layer is disconnected at the side edge of the first conductive layer and prevent the first conductive layer from being broken by adjusting the size relationship among the first conductive layer, the second conductive layer and the fourth film layer.

[0091] For example, Figure 6 As shown, the thickness of the fourth film layer 540 is not less than 1 / 2 of the thickness of the first conductive layer 510, so that the first conductive layer can be well supported to prevent the side edge of the first conductive layer from being broken.

[0092] For example, the second electrode may include a film layer of the same layer and the same material as the fourth film layer in the connecting portion, that is, the second electrode may include four electrode layers, and the four electrode layers correspond to the four film layers in the connecting portion one by one, and the corresponding same film layers are formed by a one-step patterning process. However, it is not limited thereto, and the second electrode may also include only the above three electrode layers (for example, electrode layers 221, 222, and 223), and the three electrode layers correspond to the first conductive layer, the second conductive layer, and the third conductive layer in the connecting portion one by one.

[0093] For example, Figure 2 As shown, the display substrate further includes a gate line 600 extending along the second direction, and the gate line 600 is located between the data line 300 and the base substrate 100 .

[0094] For example, Figure 7 for Figure 2 The figure shows a schematic diagram of the local structure of the display substrate. Figure 7As shown, the electrode line 400 extends along the first direction. The electrode line 400 is a long line, and the electrode line 400 is a thick metal line, so it has strong conductivity. The first electrode of the organic light-emitting element is connected to the electrode line 400 as an auxiliary cathode line, which can solve the IR drop problem of the first electrode.

[0095] For example, Figure 7 As shown, the width of the overlapped portion of the electrode line 400 and the gate line 600 is smaller than the width of the non-overlapped portion of the electrode line 400 and the gate line 600, so as to reduce the parasitic capacitance generated therebetween. Figure 7 It is schematically shown that by reducing the width of some positions of the electrode line, the size line width of the position where the electrode line overlaps with the gate line is smaller, but it is not limited to this. The width of some positions of the gate line can also be reduced to make the size line width of the position where the gate line overlaps with the electrode line smaller. The embodiments of the present disclosure are not limited to this. The width of the portion where the electrode line overlaps with the gate line can also be the same as the width of the portion where it does not overlap with the gate line.

[0096] For example, Figure 2 As shown, the display substrate includes a plurality of sub-pixels, each of which includes an organic light emitting element 200. For example, Figure 2 As shown, the display substrate includes a first sub-pixel 21, a second sub-pixel 22 and a third sub-pixel 23, and the data line 300 includes data lines 301, 302 and 303. The first sub-pixel 21, the second sub-pixel 22 and the third sub-pixel 23 are connected to the data lines 301, 302 and 303 respectively.

[0097] For example, each sub-pixel includes the above-mentioned organic light-emitting element and a pixel circuit for driving the organic light-emitting element to emit light. Figure 8 Schematically shows a circuit diagram of a pixel circuit, Fig. 9 Shown include Figure 8 The pixel layout of the pixel circuit shown in FIG. Figure 8 As shown, the pixel circuit can be a 3T1C pixel circuit, that is, three thin-film transistors (TFT) and a storage capacitor Cst are used to realize the function of driving the organic light-emitting element to emit light. Of course, the pixel circuit in the embodiment of the present disclosure is not limited to the 3T1C pixel circuit, and the number of thin-film transistors and storage capacitors can also be increased. Of course, the pixel circuit of each sub-pixel can also be a 2T1C pixel circuit, that is, including a switching transistor, a driving transistor and a storage capacitor.

[0098] For example, Figure 8 and Fig. 9 As shown, the pixel circuit includes a first thin film transistor T1, a driving transistor T2, a second thin film transistor T3, and a storage capacitor Cst. Figure 1The thin film transistor 40 shown may be Figure 7 The driving transistor T2 is shown.

[0099] For example, Figure 8 and Fig. 9 As shown, the second electrode of the second thin film transistor T3 is connected to the second electrode of the organic light emitting element EL; the gate of the driving transistor T2 is connected to the second electrode of the first thin film transistor T1, and the first electrode of the driving transistor T2 is connected to the first voltage terminal Vdd. For example, the first electrode of the driving transistor T2 is connected to the first voltage terminal Vdd through a connecting line S (for example, it can be connected to Figure 1 The light-shielding layer 11 shown in the figure is connected to the first voltage terminal Vdd (for example, the power line Vdd), and the second electrode of the driving transistor T2 is connected to the second electrode of the organic light-emitting element EL; the first electrode of the storage capacitor Cst is connected to the gate of the driving transistor T2, and the second electrode of the storage capacitor Cst is connected to the second electrode of the driving transistor T2; the first electrode of the organic light-emitting element EL is connected to the second voltage terminal Vss.

[0100] For example, the first power supply terminal Vdd is a voltage source to output a constant first voltage, the first voltage is a positive voltage, and the second power supply terminal Vss is a voltage source to output a constant second voltage, the second voltage is a negative voltage, etc. For example, in some examples, the second power supply terminal Vss can be grounded.

[0101] For example, Figure 8 and Fig. 9 As shown, the gate of the first thin film transistor T1 is connected to the gate line 600 to receive the scan signal Vg, the first electrode of the first thin film transistor T1 is connected to the data line 300 to receive the data signal Vdata, and the second electrode of the first thin film transistor T1 is connected to the gate of the driving transistor T2; the first electrode of the driving transistor T2 is connected to the power line Vdd (first voltage terminal) to receive the first voltage Vdd (high voltage, such as a constant positive voltage), and the second electrode of the driving transistor T2 is connected to the second electrode of the organic light emitting element EL; the first electrode of the storage capacitor Cst is connected to the second electrode of the first thin film transistor T1 and the gate of the driving transistor T2, and the second electrode of the storage capacitor Cst is connected to the second electrode of the driving transistor T2; the first electrode of the organic light emitting element EL is connected to the second voltage terminal to receive the second voltage Vss (low voltage, such as a ground voltage). When a scan signal is applied through the gate line 600 to turn on the first thin film transistor T1, the data signal Vdata input by the data driving circuit through the data line 300 can charge the storage capacitor Cst through the first thin film transistor T1, thereby storing the data signal Vdata in the storage capacitor Cst, and the stored data signal Vdata can control the conduction degree of the driving transistor T2, thereby controlling the current flowing through the driving transistor T2 to drive the organic light emitting element EL to emit light, that is, this current determines the gray scale of the light emitted by the sub-pixel.

[0102] For example, the first thin film transistor T1 may be a switch transistor, and the second thin film transistor T3 may be a compensation transistor.

[0103] For example, the second thin film transistor T3 may be a sensing transistor, the first electrode of which is connected to a detection circuit (not shown) via a sensing line to receive a sensing signal VSEN, thereby realizing a compensation function, and the gate of the second thin film transistor T3 is connected to a gate line 300 to receive a scanning signal Vg. Figure 8 As shown, after the driving transistor T2 is turned on, the detection circuit can be charged via the second thin film transistor T3, so that the potential of the second electrode of the driving transistor T2 changes. When the voltage Vs of the second electrode of the driving transistor T2 is equal to the difference between the gate voltage Vg of the driving transistor T2 and the threshold voltage Vth of the driving transistor, the driving transistor T2 is turned off. At this time, after the driving transistor T2 is turned off, the sensing voltage (that is, the voltage Vb of the source electrode after the driving transistor T2 is turned off) can be obtained from the second electrode of the driving transistor T2 via the turned-on second thin film transistor T3. After obtaining the voltage Vb of the source electrode after the driving transistor T2 is turned off, the threshold voltage Vth=Vdata-Vb of the driving transistor T2 can be obtained, thereby establishing compensation data for each pixel circuit based on the threshold voltage of the driving transistor in each pixel circuit, and then realizing the threshold voltage compensation function of each sub-pixel on the array substrate.

[0104] For example, the second electrode of the second thin-film transistor T3 can also input the current at the positive terminal of the sensed organic light-emitting element EL into the detection circuit via the sensing line to obtain the current used by the organic light-emitting element EL to emit light, and then establish compensation data for each light-emitting element based on the current, thereby realizing optical compensation of the organic light-emitting elements of each sub-pixel, so as to achieve overall compensation for the uniformity of the display substrate.

[0105] For example, at least one of the first thin film transistor T1, the second thin film transistor T3, and the driving transistor T2 may be a top gate thin film transistor. A top gate thin film transistor has the characteristic of a short channel, so its on-state current Ion can be effectively improved, thereby significantly improving the display effect of the display substrate and effectively reducing power consumption. The gate and source and drain overlap area of ​​the top gate thin film transistor is small, so the parasitic capacitance generated is small.

[0106] For example, Fig. 9 As shown, the electrode line 400 can be connected to the film layer of the same gate layer through the via hole 056 in the interlayer insulating layer 13, so as to increase the conductivity of the electrode line, but it is not limited to this, and the electrode line may not be connected to other structures.

[0107] For example, Fig. 9As shown, two branches are set at the overlapping part of the gate line 600, the electrode line 400, the data line 300 and at least one of the power line Vdd. When one of the branches is short-circuited, the branch is cut off to transmit the gate signal through the other branch, which is convenient for maintenance.

[0108] The disclosed embodiment provides a method for producing Figure 1 The method for manufacturing the display substrate shown in FIG. Fig.10 is a schematic flow chart of a method for manufacturing a display substrate according to an embodiment of the present disclosure, Figure 11-Figure 16 Based on Fig.10 The production process diagram of the flow chart shown in FIG. Figures 10 to 16 As shown, the manufacturing method includes the following steps.

[0109] S101: forming a metal layer on a base substrate and patterning it to form data lines and electrode lines extending along a first direction.

[0110] For example, Fig.11 As shown, before forming the data lines 300 and the electrode lines 400 , the manufacturing method further includes patterning a light shielding layer 11 on the base substrate 100 , and the light shielding layer 11 is used to shield the active layer 41 in the thin film transistor 40 to be formed subsequently.

[0111] For example, Fig.11 As shown, after forming the light shielding layer 11 , the manufacturing method further includes forming a buffer layer 12 on the light shielding layer 11 .

[0112] For example, Fig.11 As shown, after forming the buffer layer 12, the manufacturing method further includes forming an active semiconductor layer on the buffer layer 12, and patterning to form an active layer 41 (for example, a channel region) and source and drain regions 042 and 043 of the thin film transistor 40, where the source and drain regions 042 and 043 are regions after the active semiconductor layer is subjected to conductor processing. Then, a gate insulating layer 14, a gate 44, and a gate line 600 are patterned in sequence on the active layer 41.

[0113] For example, Fig.11 As shown, after forming the gate line 600 , the manufacturing method further includes forming an interlayer insulating layer 13 on the gate line 600 , and patterning the interlayer insulating layer 13 and the buffer layer 12 to form via holes exposing the source and drain regions 042 and 043 and the light shielding layer 11 .

[0114] For example, after the interlayer insulating layer 13 is patterned, a metal layer is formed on the interlayer insulating layer 13 and patterned, and the portions of the patterned metal layer that are in contact with the conductive semiconductor layer of the source and drain regions 042 and 043 of the thin film transistor 40 are the first electrode 42 and the second electrode 43 (source and drain electrodes 42 and 43) respectively. For example, the second electrode 220 of the organic light emitting element 200 and the second electrode 43 of the thin film transistor 40 are connected to the light shielding layer 11, and can be used together as one electrode of Cst to increase the capacitance of the storage capacitor. For example, after the above-mentioned metal layer is patterned, structures such as the first electrode 42 and the second electrode 43 of the thin film transistor 40, the data line 300, the electrode line 400, the power line Vdd, and the sensing line (not shown) can be formed.

[0115] S102: forming an insulating layer on the data line.

[0116] like Fig.11 As shown, the manufacturing method includes forming an insulating layer, for example, a passivation layer 15 and a planarization layer 16 , on a side of the film layer where the data line 300 is located away from the base substrate 100 . Figure 1 The insulating layer schematically shows that it includes a passivation layer and a planar layer, and the planar layer is located on the side of the passivation layer away from the substrate. However, it is not limited thereto, the positions of the passivation layer and the planar layer in the insulating layer can be interchanged, or the insulating layer can also include only the planar layer without the passivation layer.

[0117] For example, Fig.12 As shown, the insulating layer is patterned to form a via hole 1560 exposing the second electrode 43 of the thin film transistor 40 and a via hole 156 exposing the electrode line 400 .

[0118] S103: forming a conductive film on a side of the insulating layer away from the base substrate and patterning to form a second electrode located in the light-emitting area and at least one connecting portion located in the non-light-emitting area;

[0119] S104: forming a light-emitting layer on a side of the second electrode away from the substrate, wherein the light-emitting layer covers the second electrode and the connecting portion;

[0120] S105: forming a first electrode on a side of the light-emitting layer away from the base substrate, wherein the display substrate includes an organic light-emitting element located in the light-emitting area, and the organic light-emitting element includes a first electrode, a light-emitting layer, and a second electrode stacked in a direction perpendicular to the base substrate; and the connecting portion is configured to connect the electrode line to the first electrode.

[0121] For example, Fig.12 and Fig.13As shown, the steps of forming the second electrode 220 and the connecting portion 500 on the side of the insulating layer away from the base substrate 100 include: forming a first conductive film on the side of the insulating layer away from the base substrate 100, a part of the first conductive film is connected to the second electrode 43 through the via 1560, and another part of the first conductive film is connected to the electrode line 400 through the via 156; patterning the first conductive film to form a first electrode layer 223 (an electrode layer of the second electrode 220) located in the light-emitting area 20 and a third conductive layer 530 (a conductive layer of the connecting portion 500) located in the non-light-emitting area. For example, Fig.13 As shown, the third conductive layer 530 is connected to the electrode line 400 through the via 156 .

[0122] For example, the first electrode layer 223 in the second electrode 220 and the third conductive layer 530 of the connecting portion 500 may be formed using the same material in the same patterning process. For example, the material of the electrode layer 223 and the third conductive layer 530 may be indium tin oxide (ITO) or indium tin oxide alloy.

[0123] For example, after forming the first electrode layer 223 and the third conductive layer 530, the manufacturing method further includes sequentially forming a second conductive film and a third conductive film on the side of the first electrode layer 223 and the third conductive layer 530 away from the base substrate 100, and the material of the second conductive film is different from that of the first conductive film and the third conductive film. Fig.14 As shown, the second conductive film and the third conductive film are patterned to form the second electrode layer 221 and the third electrode layer 222 located in the light emitting region 20, and the first conductive layer 510 and the second conductive layer 520 located in the non-light emitting region.

[0124] For example, the second electrode layer 221 in the second electrode 220 and the first conductive layer 510 of the connecting part 500 can be formed using the same material in the same patterning process. For example, the third electrode layer 222 in the second electrode 220 and the second conductive layer 520 of the connecting part 500 can be formed using the same material in the same patterning process.

[0125] For example, the material of the second conductive film may be an aluminum alloy with good reflective effect, but is not limited thereto, and may also be other materials with good reflective effect. For example, the material of the third conductive film may be an indium tin oxide alloy.

[0126] For example, patterning the second conductive film and the third conductive film includes: wet etching the third conductive film to form the second electrode layer 221 and the first conductive layer 510, and wet etching the second conductive film to form the third electrode layer 222 and the second conductive layer 520. The amount of wet etching of the second conductive layer 520 is greater than the amount of wet etching of the first conductive layer 510, so that the size of the first conductive layer 510 in the second direction is greater than the size of the second conductive layer 520 in the second direction. For example, the mask for forming the first conductive layer 510 and the second conductive layer 520 can be the same mask.

[0127] For example, the third conductive film can be etched with a dilute acid of H2SO4 to form the second electrode layer 221 and the first conductive layer 510, and then the second conductive film can be etched with a large over-etching amount with a concentrated acid of H3PO4 to make the second conductive film have a large indentation, so that the first conductive layer 510 extends outward along the second direction relative to the edge of the second conductive layer 520 to have a longer tip, and the tip is used to cut off the light-emitting layer formed subsequently.

[0128] For example, in the process of etching the third conductive film with H2SO4-based diluted acid, the H2SO4-based diluted acid may hardly etch the material of the second conductive film, so that the etching process of the third conductive film hardly affects the second conductive film. For example, in the process of etching the second conductive film with H3PO4-based concentrated acid, the H3PO4-based diluted acid may hardly etch the material of the third conductive layer 530 and the first electrode layer 223, so that the etching process of the second conductive film hardly affects the third conductive layer 530 and the first electrode layer 223.

[0129] For example, the second electrode layer 221 and the third electrode layer 222 formed during the wet etching process of forming the first conductive layer 510 and the second conductive layer 520 may have the following relationship: the size of the second electrode layer 221 in the second direction is greater than the size of the third electrode layer 222 in the second direction.

[0130] For example, Fig.15 As shown, after forming the second electrode 220 and the connecting portion 500, the manufacturing method further includes patterning and forming a pixel defining layer 30 on the second electrode 220 and the connecting portion 500. The pixel defining layer 30 has Figure 1 The features of the pixel defining layer 30 in the display substrate are not described in detail here.

[0131] For example, Fig.16As shown, after forming the pixel defining layer 30, the manufacturing method further includes forming a light emitting layer 230 on the first conductive layer 510, the second electrode 220 and the pixel defining layer 30. For example, forming the light emitting layer 230 includes evaporating the light emitting layer material, and the light emitting layer material deposited on the side edge of the first conductive layer 510 will be disconnected to form a gap 231. Since the material of the light emitting layer 230 is formed on the second electrode, the pixel defining layer and the first conductive layer by evaporation, the diffusion performance of the light emitting layer material is very poor, so the side edge (such as the tip) of the first conductive layer can cut off the light emitting layer and prevent it from being deposited under the side edge of the first conductive layer, that is, the light emitting layer evaporated on the pixel defining layer and the connecting portion will form a gap between the pixel defining layer and the first conductive layer.

[0132] For example, Figure 1 As shown, after the light-emitting layer 230 is formed, the manufacturing method further includes forming a first electrode 210 on the light-emitting layer 230, and the formation of the first electrode 210 includes: depositing the first electrode 210 on the light-emitting layer 230 by sputtering so that the first electrode 210 is at least connected to the third conductive layer 530 through the gap 231. Since the first electrode 210 formed by sputtering has good diffusion performance, it can bypass the side edge of the first conductive layer 510 and be deposited on the surface of the third conductive layer 530 away from the base substrate 100 and the side surface of the second conductive layer 520, so that the first electrode 210 and the connecting part 500 are smoothly overlapped, and then the first electrode 210 is connected to the electrode line 400. Of course, the embodiment of the present disclosure is not limited to the first electrode 210 being deposited on the surface of the third conductive layer away from the base substrate and the side surface of the second conductive layer. The first electrode can also be deposited only on the surface of the third conductive layer away from the base substrate.

[0133] The manufacturing method of the display substrate provided by the embodiment of the present disclosure can set the electrode line and the source and drain metal layer in the same layer, which reduces the process flow, and forms the connecting part and the electrode line as the auxiliary cathode under the light-emitting layer, which will not affect the performance of the organic light-emitting element. After the first electrode and the connecting part are formed, the side of the first electrode and the connecting part away from the base substrate will be covered with an inorganic protective layer, such as a silicon nitride or silicon oxynitride protective layer, to ensure the reliability of the product.

[0134] For example, in one example of the embodiment of the present disclosure, after forming the second conductive film and before forming the third conductive film, the manufacturing method further includes: forming a fourth film layer material on the second conductive film; after patterning the third conductive film, the method further includes: patterning the second conductive film and the fourth film layer material simultaneously or separately to form Figure 6 The second conductive layer 520 and the fourth film layer 540 are shown. Along the second direction, the size of the fourth film layer 540 is not larger than the size of the first conductive layer 510 , and is larger than the size of the second conductive layer 520 .

[0135] For example, simultaneously patterning the second conductive film and the fourth film layer material includes: using the same etching solution to simultaneously etch the second conductive film and the fourth film layer material. The etching rate of the etching solution for the second conductive film is greater than the etching rate of the fourth film layer material so that the size of the fourth film layer is greater than the size of the second conductive layer.

[0136] For example, a second conductive film, a fourth film layer material, and a third conductive film may be formed on the third conductive layer and the first electrode layer in sequence. For example, the fourth film layer material is different from the materials of the second conductive film and the third conductive film. For example, the fourth film layer material may be a metal film layer such as silver or titanium, or a non-metal film layer such as silicon nitride. In this example, the steps before forming the second conductive film are similar to those in the embodiment of the present invention. Figure 11-13 The steps shown are the same and will not be repeated here.

[0137] For example, after forming the third conductive film, the manufacturing method may include first using H2SO4 series dilute acid to etch the third conductive film to form the second electrode layer 221 and the first conductive layer 510, and then using H3PO4 series concentrated acid to simultaneously perform a large over-etching on the second conductive film and the fourth film layer material. Since the etching rate of the fourth film layer material is lower than the etching rate of the second conductive film material, the fourth film layer and the second conductive layer with different lengths along the second direction are simultaneously formed.

[0138] The embodiment of the present disclosure provides a fourth film layer between the first conductive layer and the second conductive layer, so as to support the first conductive layer and prevent the two side edges of the first conductive layer from breaking, thereby ensuring that the first electrode can be connected to the connecting portion.

[0139] The embodiments of the present disclosure are not limited to the simultaneous etching of the second conductive film and the fourth film layer materials. Different etching solutions may be used for the second conductive film and the fourth film layer materials, and etching may be performed step by step to form the second conductive layer and the fourth film layer.

[0140] For example, in this example, the steps after forming the connection portion including four film layers are Figure 15-16 The steps are the same and will not be repeated here.

[0141] Another embodiment of the present disclosure provides a display device, comprising any display substrate according to the embodiments of the present disclosure. For example, the display substrate may be an array substrate of the display device.

[0142] The display device provided by the embodiment of the present disclosure can effectively reduce the resistance of the first electrode by providing a connecting portion to connect the electrode line and the first electrode of the organic light-emitting element, thereby effectively alleviating the IR drop problem generated by the first electrode.

[0143] The display device provided by the embodiment of the present disclosure can ensure that the light-emitting layer is disconnected at the side edge of the first conductive layer to achieve connection between the first electrode and the connecting portion, and can also prevent the first conductive layer from breaking by providing a connecting portion including a first conductive layer, a second conductive layer, a third conductive layer and a fourth conductive layer.

[0144] The display device provided in the embodiment of the present disclosure may be an organic light emitting diode display device.

[0145] The display device provided in the embodiment of the present disclosure may be a transparent display device.

[0146] The display device provided by the embodiment of the present disclosure may further include a cover layer located on the display side of the display substrate to protect the organic light-emitting element.

[0147] There are a few points to note:

[0148] (1) In the drawings of the embodiments of the present disclosure, only the structures related to the embodiments of the present disclosure are involved, and other structures can refer to the general design.

[0149] (2) In the absence of conflict, features in the same embodiment or in different embodiments of the present disclosure may be combined with each other.

[0150] The above description is merely an exemplary embodiment of the present disclosure and is not intended to limit the protection scope of the present disclosure. The protection scope of the present disclosure is determined by the appended claims.

Claims

1. A display substrate, comprising: substrate substrate; A plurality of organic light-emitting elements are located on the base substrate, each of the organic light-emitting elements comprises a first electrode, a light-emitting layer and a second electrode which are sequentially stacked in a direction perpendicular to the base substrate, and the second electrode is located on a side of the light-emitting layer facing the base substrate; A data line, located between the base substrate and the organic light emitting element, and extending along a first direction; An electrode line, which is arranged in the same layer as the data line and is located outside the light-emitting area of ​​the organic light-emitting element; The display substrate further comprises at least one connecting portion, which is located in a region outside the light-emitting region and is configured to connect the electrode line and the first electrode, the connecting portion is separated from the second electrode, and the light-emitting layer covers the second electrode and the at least one connecting portion; The first electrode is a transparent electrode, the connecting portion comprises a first conductive layer and a second conductive layer which are stacked in a direction perpendicular to the base substrate and are made of different materials, the first conductive layer is located on a side of the second conductive layer away from the base substrate, along a second direction intersecting the first direction and parallel to the base substrate, the size of the first conductive layer is larger than the size of the second conductive layer, the light emitting layer is disconnected at the side edge of the first conductive layer, and the first electrode is connected to the connecting portion through a gap at the disconnected portion of the light emitting layer; The first electrode is in direct contact with the second conductive layer and completely wraps a side surface of the second conductive layer, and the first electrode is electrically connected to the first conductive layer.

2. The display substrate according to claim 1, wherein: The light emitting layer is disconnected at a side edge of the connecting portion, and the first electrode is connected to the connecting portion through a gap at the disconnected portion of the light emitting layer.

3. The display substrate according to claim 1, wherein: The connecting portion also includes a third conductive layer located on the side of the second conductive layer facing the base substrate, the material of the third conductive layer is different from the material of the second conductive layer, and the first electrode is at least partially connected to a portion of the surface of the third conductive layer away from the base substrate that is not covered by the second conductive layer.

4. The display substrate according to claim 3, wherein: Along the second direction, a size of the third conductive layer is larger than a size of the second conductive layer.

5. The display substrate according to claim 3, wherein: Along the second direction, a size of the third conductive layer is larger than a size of the first conductive layer.

6. The display substrate according to claim 3, wherein: The first electrode is connected to a surface of the third conductive layer away from the base substrate and a side surface of the second conductive layer.

7. The display substrate according to claim 3, wherein: The connecting portion further includes a fourth film layer located between the first conductive layer and the second conductive layer, and the material of the fourth film layer is different from the materials of the second conductive layer and the first conductive layer; Along the second direction, a size of the fourth film layer is not larger than a size of the first conductive layer, and is larger than a size of the second conductive layer.

8. The display substrate according to claim 7, wherein: The fourth film layer is a conductive layer, and along the second direction, a size of the fourth film layer is smaller than a size of the first conductive layer.

9. The display substrate according to claim 8, wherein: The thickness of the fourth film layer is not less than 1 / 2 of the thickness of the first conductive layer.

10. The display substrate according to any one of claims 3 to 9, wherein: Along a direction perpendicular to the base substrate, the second conductive layer overlaps with a middle region of the first conductive layer, and along the second direction, a size difference between the first conductive layer and the second conductive layer ranges from 0.6 to 4 micrometers.

11. The display substrate according to any one of claims 3 to 9, wherein: Along a direction perpendicular to the base substrate, the thickness of the second conductive layer is greater than the thickness of the light emitting layer.

12. The display substrate according to any one of claims 3 to 9, further comprising: an insulating layer, located between the third conductive layer and the electrode line, Wherein, a via hole is provided in the insulating layer, and the third conductive layer is connected to the electrode line through the via hole.

13. The display substrate according to any one of claims 3 to 9, wherein: The second electrode of the organic light emitting element includes at least two electrode layers, and the first conductive layer and the second conductive layer are respectively arranged in the same layer as the two electrode layers in the second electrode and are insulated.

14. The display substrate according to claim 13, further comprising: A pixel defining layer includes a plurality of openings to define a plurality of light emitting areas, and the light emitting layer covers the pixel defining layer and the plurality of openings. The pixel defining layer is disposed between the second electrode and the connecting portion, and a certain distance is disposed between the first conductive layer and the pixel defining layer along the second direction.

15. The display substrate according to claim 14, wherein: Along a direction perpendicular to the base substrate, an edge portion of the third conductive layer overlaps the pixel defining layer.

16. The display substrate according to any one of claims 1 to 9, further comprising: a gate line extending along the second direction and located between the data line and the base substrate, The electrode line extends along the first direction, and the width of the portion where the electrode line overlaps with the gate line is smaller than the width of the portion where the electrode line does not overlap with the gate line.

17. A display device comprising the display substrate according to any one of claims 1 to 16.

18. A method for manufacturing a display substrate, comprising: forming a metal layer on the base substrate and patterning it to form data lines and electrode lines extending along a first direction; forming an insulating layer on the data line; Forming a conductive film on a side of the insulating layer away from the base substrate and patterning a second electrode located in a light-emitting area and at least one connecting portion located in a non-light-emitting area; forming a light-emitting layer on a side of the second electrode away from the base substrate, wherein the light-emitting layer covers the second electrode and the connecting portion; A first electrode is formed on a side of the light emitting layer away from the base substrate, Wherein, the display substrate comprises an organic light-emitting element located in the light-emitting area, and the organic light-emitting element comprises the first electrode, the light-emitting layer and the second electrode stacked in a direction perpendicular to the base substrate; The connecting portion is configured to connect the electrode wire and the first electrode; Forming the connecting portion includes forming a first conductive layer and a second conductive layer which are stacked and made of different materials, wherein the first conductive layer is located on a side of the second conductive layer away from the base substrate, and along a second direction intersecting the first direction and parallel to the base substrate, a size of the first conductive layer is larger than a size of the second conductive layer; The first electrode is in direct contact with the second conductive layer and completely wraps a side surface of the second conductive layer, and the first electrode is electrically connected to the first conductive layer.

19. The method according to claim 18, wherein: The light emitting layer formed on the first conductive layer is disconnected at a side edge of the first conductive layer so that the first electrode is connected to the connecting portion through a gap at the disconnected portion of the light emitting layer.

20. The method according to claim 19, wherein: The forming of the connecting portion further includes forming a third conductive layer before forming the second conductive layer. Forming the second electrode and the connecting portion includes: Patterning the insulating layer to form via holes exposing the electrode lines; Forming a first conductive film on a side of the insulating layer away from the base substrate, wherein the first conductive film is connected to the electrode line through the via hole; The first conductive film is patterned to form a first electrode layer located in the light-emitting area and the third conductive layer located in the non-light-emitting area, wherein the material of the third conductive layer is different from that of the second conductive layer, and the third conductive layer is connected to the electrode line through the via hole, forming a second conductive film and a third conductive film in sequence on a side of the first conductive film away from the base substrate; Patterning the second conductive film and the third conductive film to form a second electrode layer and a third electrode layer located in the light-emitting region, and the first conductive layer and the second conductive layer located in the non-light-emitting region; The second electrode includes the first electrode layer, the second electrode layer and the third electrode layer, and the first electrode is at least partially connected to a portion of the surface of the third conductive layer away from the base substrate that is not covered by the second conductive layer.

21. The method according to claim 20, wherein: Patterning the second conductive film and the third conductive film includes: wet etching the third conductive film to form the second electrode layer and the first conductive layer, wet etching the second conductive film to form the third electrode layer and the second conductive layer, The etching amount of the second conductive layer is greater than the etching amount of the first conductive layer so that the size of the first conductive layer in the second direction is greater than the size of the second conductive layer in the second direction.

22. The method according to claim 21, wherein: Forming the light-emitting layer comprises: Depositing a light-emitting layer material on the first conductive layer, wherein the light-emitting layer material deposited on the side edge of the first conductive layer is disconnected to form the light-emitting layer including the gap; Forming the first electrode includes: The first electrode is deposited on the light-emitting layer by sputtering so that the first electrode is connected to at least the third conductive layer through the gap.

23. The method according to claim 22, wherein: After forming the second conductive film and before forming the third conductive film, the method further includes: forming a fourth film layer material on the second conductive film, wherein the fourth film layer material is different from materials of the second conductive film and the third conductive film; After patterning the third conductive film, the method comprises: The second conductive film and the fourth film layer materials are patterned simultaneously or separately to form the second conductive layer and the fourth film layer, wherein along the second direction, the size of the fourth film layer is not larger than the size of the first conductive layer and larger than the size of the second conductive layer.

24. The method according to claim 23, wherein: The method of simultaneously patterning the second conductive film and the fourth film layer material comprises: The second conductive film and the fourth film layer material are etched simultaneously using the same etching solution, wherein the etching rate of the etching solution on the second conductive film is greater than the etching rate on the fourth film layer material so that the size of the fourth film layer is larger than that of the second conductive layer.

Images