A vortex self-heating silicon material purification continuous discharge vacuum furnace device

Abstract

The present invention discloses a vortex self-heating silicon material purification continuous discharge vacuum furnace device, comprising: a frame; a reactor slidably mounted on the frame; a vacuum receiving device mounted on the frame; during production, the reactor is moved to the vacuum receiving device and the discharge port of the reactor, which also serves as a feeding port, is docked with the receiving port of the vacuum receiving device, so that the silicon material after the reaction in the reactor is received in the vacuum receiving device. The present invention arranges the reactor and the vacuum receiving cavity in the vacuum receiving device on the left and right sides of the frame, respectively, so that the product outlet is directly arranged at the bottom of the vacuum receiving cavity in the vacuum receiving device, making the continuous discharge smoother under vacuum; when the silicon material in the reactor reaches the process temperature, the sublimated silicon monoxide product directly reaches the vacuum receiving cavity in the vacuum receiving device, eliminating the channel, thereby avoiding the problem of silicon monoxide product depositing and deteriorating in the channel, blocking the channel, and making production impossible.

Description

Technical Field

[0001] The present invention relates to the technical field of vacuum furnaces, and in particular to an eddy current self-heating silicon material purification continuous discharge vacuum furnace device which uses electromagnetic induction heating and is efficient, energy-saving, temperature-controlled stably, safe, and environmentally friendly. Background Art

[0002] Silicon is a key component in the manufacturing of high-tech products such as batteries, semiconductors, and optical fiber communications. Heating the silicon material at high temperatures in a vacuum reactor causes the silicon dioxide and metallic silicon in the material to undergo an oxidation-reduction reaction, producing silicon monoxide. This sublimates into a water-cooled vacuum collection chamber where it is collected.

[0003] Currently, most silicon material purification equipment in use on the market utilizes resistance-type vacuum furnaces, which have slow heating and cooling rates, low product yields, large footprints, and inability to continuously discharge materials. A small number of electromagnetic induction-heated vacuum furnaces also address the slow heating and cooling issues of resistance-type vacuum furnaces, but they still lack continuous discharge capabilities. Especially when processing low-density silicon materials, the oversized vacuum reactor can only handle small amounts of low-density silicon material. In particular, when sublimated silicon monoxide is collected as an ultrafine powder, its volume far exceeds that of the silicon feedstock, rapidly filling the water-cooled vacuum collection chamber. The remaining silicon monoxide product has no time to cool, resulting in mixed silicon, which directly impacts the quality of the purified silicon product. Therefore, these two furnace types limit the output and quality of purified silicon products and fail to meet the high-quality silicon material purification requirements required by the high-tech manufacturing industry. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide an eddy current self-heating silicon material purification continuous discharge vacuum furnace device in response to the above-mentioned shortcomings of the electromagnetic induction heating vacuum furnace and the resistance vacuum furnace currently used in the market that cannot discharge materials continuously.

[0005] The technical problem to be solved by the present invention can be achieved through the following technical solutions:

[0006] A vortex self-heating silicon material purification continuous discharge vacuum furnace device, comprising: a frame; characterized in that it also includes:

[0007] a reactor slidably mounted on the frame;

[0008] a vacuum material collecting device installed on the frame;

[0009] During production, the reactor is moved to the vacuum receiving device and the discharge port of the reactor, which also serves as the feeding port, is connected to the receiving port of the vacuum receiving device, so that the silicon material after the reaction in the reactor is received in the vacuum receiving device.

[0010] In a preferred embodiment of the present invention, during the reaction, the reactor and vacuum material receiving device are horizontally positioned on either side of the frame. This facilitates the direct placement of a product outlet at the bottom of the vacuum collection chamber of the vacuum material receiving device, enabling smoother continuous material discharge under vacuum conditions. When the silicon material in the reactor reaches the process temperature, the sublimated silicon monoxide product enters the vacuum material receiving chamber directly, eliminating the channel and preventing the silicon monoxide product from accumulating and deteriorating within the channel, potentially blocking the channel and disrupting production.

[0011] In a preferred embodiment of the present invention, a slide rail is installed on the frame, one end of the slide rail extends to the vacuum material receiving device, and the reactor is slidably installed on the slide rail.

[0012] In a preferred embodiment of the present invention, the reactor is slidably mounted on the slide rail using a bracket and a hydraulic lifting rod, wherein the lower end of the bracket is fixed on the slide rail, the upper end of the bracket is fixed to the bottom of the reactor, the fixed part of the hydraulic lifting rod is fixed on the slide rail, and the movable part of the hydraulic lifting rod is connected to the discharge port position of the reactor; when the hydraulic lifting rod is raised or lowered, it can drive the reactor to flip over, and can lift the discharge port of the reactor which also serves as the feeding port to a certain angle, thereby increasing the loading amount of the silicon carbide graphite crucible; and at the same time, it is convenient for docking with the receiving port of the vacuum receiving device.

[0013] In a preferred embodiment of the present invention, the reactor is a vortex autothermal reactor, which has fast heating and cooling speeds, shortens production time, and increases output.

[0014] In a preferred embodiment of the present invention, the reactor includes an outer shell, a magnetic yoke, an induction coil, a ramming material, a crucible, an alumina thermal insulation sealing tape and a crucible sealing plate. The outer shell is designed to be a closed shell with a vacuum pressure maintaining function; the crucible, ramming material, induction coil, and magnetic yoke are arranged in the outer shell and the ramming material is filled between the crucible and the outer shell. The crucible sealing plate is arranged on the discharge port of the crucible which also serves as the feeding port. The alumina thermal insulation sealing tape seals the ramming material, coil, and magnetic yoke between the outer shell and the crucible.

[0015] In a preferred embodiment of the present invention, the magnetic yoke is installed outside the induction coil to fix the induction coil on the inner surface of the housing.

[0016] In a preferred embodiment of the present invention, a through opening is left between the crucible sealing plate and the feeding port of the crucible, which also serves as the feeding port. The through opening can be used for feeding silicon material and exiting the sublimated silicon monoxide product.

[0017] In a preferred embodiment of the present invention, the area of ​​the through opening is less than one-quarter the area of ​​the crucible's discharge opening, which also serves as the feeding port. This allows the crucible's sealing plate to block at least three-quarters of the area of ​​the crucible's discharge opening, which also serves as the feeding port. This allows the horizontal crucible to hold more material. Furthermore, during discharge, the crucible's sealing plate separates the silicon material in the crucible from the vacuum receiving chamber, significantly reducing the cooling effect of the vacuum receiving chamber on the silicon material within the crucible.

[0018] In a preferred embodiment of the present invention, the discharge port of the reactor, which also serves as the feeding port, is a water-cooled sealing port, and a water-cooled sealing ring is provided at the water-cooled sealing port.

[0019] In a preferred embodiment of the present invention, the vacuum material receiving device includes a vacuum material receiving cavity, a product receiving hopper, a first vacuum discharge valve, a material receiving vacuum cavity, a second vacuum discharge valve, and a product collecting cylinder; the feed end of the product receiving hopper is connected to the discharge port of the vacuum material receiving cavity, a first air extraction port is provided on the product receiving hopper, and a first vacuum pump is connected to the first air extraction port; the feed port of the first vacuum discharge valve is connected to the discharge end of the product receiving hopper, the discharge of the first vacuum discharge valve is connected to the feed port of the material receiving vacuum cavity, a second air extraction port is provided on the material receiving vacuum cavity, and a second vacuum pump is connected to the second air extraction port;

[0020] The discharge port of the material receiving vacuum chamber is connected to the feed port of the second vacuum unloading valve, and the discharge port of the second vacuum unloading valve is connected to the feed port of the product collecting cylinder; a third air extraction port is provided on the feed port of the product collecting cylinder, and a third vacuum pump is connected to the third air extraction port; in this way, the first air extraction port is provided on the product receiving hopper, is connected to the reactor and the vacuum receiving chamber and is away from the scraper, and when the temperature of the reactor reaches the process temperature, the vacuum suction of the first vacuum pump is stopped to prevent the material from being extracted by the first vacuum pump; the second air extraction port is provided on the material receiving vacuum chamber, and a first air extraction port is provided between the material receiving vacuum chamber and the product receiving hopper. The vacuum discharge valve: When the second vacuum pump evacuates the material receiving vacuum chamber and the vacuum level exceeds that of the material receiving chamber, the second vacuum pump stops, the first vacuum discharge valve opens, and the product is pressed into the material receiving vacuum chamber. The first vacuum discharge valve is then closed. The third vacuum port is located at the feed port of the product collection barrel, and the third vacuum pump evacuates the product collection barrel. The discharge port of the material receiving vacuum chamber is connected to the product collection barrel through a vacuum-tight connection. At this time, the second vacuum discharge valve is opened, and the product is pressed into the product collection barrel. This process is automatically controlled. When the product collection barrel is full, a weight alarm is triggered, notifying the operator to collect the material. This achieves continuous discharge of low-density ultrafine powder silicon monoxide products.

[0021] In a preferred embodiment of the present invention, the vacuum material collecting device further comprises an electronic scale, and the product collecting cylinder is placed on the electronic scale to weigh the weight of the product collected by the product collecting cylinder.

[0022] In a preferred embodiment of the present invention, at least one observation mirror is provided on the vacuum collection chamber.

[0023] In a preferred embodiment of the present invention, the observation mirror is arranged on the top and both sides of the vacuum material receiving chamber, so that the continuous sublimation state of the material in the vacuum material receiving chamber, the scraping condition in the vacuum material receiving chamber, and the collection condition of the product receiving hopper can be observed at any time.

[0024] In a preferred embodiment of the present invention, the vacuum material collecting device further includes a scraping device, and the scraping device is arranged on the vacuum material collecting cavity.

[0025] In a preferred embodiment of the present invention, the scraper device includes a scraper motor, a scraper reduction drive mechanism and a scraper, the scraper reduction drive mechanism is installed on the vacuum collection chamber, the power output end of the scraper reduction drive mechanism extends into the vacuum collection chamber and the scraper is installed at the power output end of the scraper reduction drive mechanism, and the power input end of the scraper reduction drive mechanism is connected to the scraper motor.

[0026] In a preferred embodiment of the present invention, the scraper is provided with three scrapers, which are evenly distributed around the circumference. Each scraper is provided with scraping teeth. Since the angle between adjacent scrapers is 120°, the scraping teeth on the scrapers can effectively reduce the resistance when the scrapers are scraping the material.

[0027] In a preferred embodiment of the present invention, the scraping teeth on the three scrapers are positioned differently and staggered. With these different scraping teeth and staggered positions, the three scrapers can scrape all locations on the inner wall of the vacuum collection chamber during one rotation. Driven by a scraper motor, the scrapers rotate continuously, continuously scraping any newly adhered silicon monoxide product onto the inner wall of the vacuum collection chamber into a product receiving hopper.

[0028] Due to the adoption of the above technical solution, the present invention has the following characteristics compared with the prior art:

[0029] 1. The reactor adopts eddy current self-heating reactor, which has fast heating and cooling speed, shortens production time and increases output.

[0030] 2. The reactor and vacuum receiving device adopt a horizontal design. The vacuum receiving chambers in the reactor and the vacuum receiving device are respectively arranged on the left and right sides of the frame, so that the product outlet is directly set at the bottom of the vacuum receiving chamber in the vacuum receiving device, making continuous discharge smoother under vacuum state; when the silicon material in the reactor reaches the process temperature, the sublimated silicon monoxide product directly reaches the vacuum receiving chamber in the vacuum receiving device, eliminating the channel, avoiding the problem of silicon monoxide product deposition and deterioration in the channel, clogging the channel, and making production impossible.

[0031] 3. The shell of the reactor is designed to be a closed shell with a vacuum pressure-maintaining function, instead of placing the reactor in a vacuum furnace, which greatly reduces the volume of the vacuum furnace.

[0032] 4. The reactor uses alumina heat-insulating sealing tape to separate the vacuum receiving cavity in the vacuum receiving device from the induction coil, magnetic yoke and shell of the reactor. Alumina does not react chemically with silicon materials, and all sublimated silicon monoxide products enter the vacuum receiving cavity in the vacuum receiving device.

[0033] 5. A magnetic yoke is installed outside the induction coil to fix the induction coil in the reactor housing, which can prevent the reactor housing, bracket and hydraulic lifting rod from heating up.

[0034] 6. The crucible is made of silicon carbide graphite crucible, which does not react chemically with silicon materials, does not affect product quality, is resistant to high temperature, anti-oxidation and has a long service life.

[0035] 7. A port less than one-quarter of the crucible's area is left at the top of the crucible's sealing plate. This port can be used for adding silicon material and exiting the sublimated silicon monoxide product. The crucible sealing plate blocks more than three-quarters of the silicon carbide graphite crucible's outlet, allowing the horizontal silicon carbide graphite crucible to hold more material. The crucible sealing plate separates the silicon material in the silicon carbide graphite crucible from the water-cooled vacuum receiving chamber, greatly reducing the cooling effect of the water-cooled vacuum receiving chamber on the silicon material in the silicon carbide graphite crucible.

[0036] 8. The vacuum receiving chamber in the vacuum receiving device adopts a water-cooled vacuum receiving chamber. The water-cooled vacuum receiving chamber is made of double-layer 310S stainless steel, and the middle layer is water-cooled, which can quickly cool the sublimated silicon monoxide product to a stable state below 400°C.

[0037] 9. Three scrapers are set on the inner wall of the vacuum receiving chamber in the vacuum receiving device. The angle between adjacent scrapers is 120°. The scrapers are arranged with scraping teeth, which can effectively reduce the resistance of the scrapers when scraping. The scraping teeth on the three scrapers are in different positions and are staggered. The three scrapers can scrape all positions of the inner wall of the water-cooled vacuum receiving chamber when rotating one circle. The scrapers rotate continuously under the drive of the scraper motor, and continuously scrape the silicon monoxide products newly attached to the inner wall of the water-cooled vacuum receiving chamber into the product receiving hopper.

[0038] 10. Observation mirrors are arranged on the top and both sides of the vacuum receiving chamber in the vacuum receiving device, which can be used to observe the continuous sublimation state of the material in the water-cooled vacuum receiving chamber, the scraping situation in the water-cooled vacuum receiving chamber, and the collection situation of the product receiving hopper at any time.

[0039] 11. The first vacuum inlet is located on the product receiving hopper, connected to the reactor and vacuum receiving chamber, and away from the scraper. When the reactor temperature reaches the process temperature, the first vacuum discharge valve stops vacuum suction to prevent material from being extracted by the first vacuum discharge valve. The second vacuum inlet is located on the receiving vacuum chamber, with the first vacuum discharge valve installed between the receiving vacuum chamber and the product receiving hopper. When the receiving vacuum chamber is evacuated and the vacuum level exceeds that of the vacuum receiving chamber, the second vacuum pump stops, the first vacuum discharge valve opens, and the product is pressed into the receiving vacuum chamber, at which point the first vacuum discharge valve closes. The third vacuum inlet is located on the feed port of the product collection barrel. The discharge port of the receiving vacuum chamber is connected to the product collection barrel through a vacuum-tight connection. At this point, the second vacuum discharge valve opens, and the product is pressed into the product collection barrel. This process is automatically controlled. When the product collection barrel is full, a weight alarm is triggered, notifying the operator to collect the material. This achieves continuous discharge of low-density ultrafine powder silicon monoxide products. The vacuum degree of the product collecting tube and the receiving vacuum chamber is higher than that of the reactor, vacuum receiving chamber and vacuum receiving hopper, so the materials in the reactor, vacuum receiving chamber and vacuum receiving hopper are continuously discharged, which plays a positive role in maintaining the vacuum degree of the reactor, vacuum receiving chamber and vacuum receiving hopper.

[0040] 12. The present invention arranges the reactor and the water-cooled vacuum receiving chamber on the same track. The reactor is perfectly combined and separated from the water-cooled vacuum receiving chamber through the track, so that the water-cooled sealing port of the reactor can be perfectly connected with the water-cooled vacuum receiving chamber in the vacuum receiving device through the water-cooled sealing ring on the water-cooled sealing port; after the reactor and the water-cooled vacuum receiving chamber are separated by the track, it is convenient for adding materials and inspection and maintenance work.

[0041] 13. A hydraulic lifting rod is connected to the bottom of the reactor, which can lift the reactor feeding port to a certain angle, thereby increasing the loading amount of the silicon carbide graphite crucible. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Figure 1This is a structural schematic diagram of the eddy current self-heating silicon material purification continuous discharge vacuum furnace device of the present invention (reactor feeding position).

[0043] Figure 2 This is a structural schematic diagram of the eddy current self-heating silicon material purification continuous discharge vacuum furnace device of the present invention (the reactor and the vacuum receiving device are in separate positions). Figure 3 This is a structural schematic diagram of the eddy current self-heating silicon material purification continuous discharge vacuum furnace device of the present invention (the reactor and the vacuum receiving device are in the combined position).

[0044] Figure 4 This is a cross-sectional view of the structure of the eddy current self-heating silicon material purification continuous discharge vacuum furnace device of the present invention (the reactor and the vacuum receiving device are in the combined position) Figure 5 It is a structural schematic diagram of the vacuum material collecting device of the present invention.

[0045] Figure 6 It is a left view of the reactor of the present invention.

[0046] Figure 7 It is a schematic diagram of the scraper structure of the present invention. DETAILED DESCRIPTION

[0047] The present invention is further described below with reference to the accompanying drawings and specific embodiments.

[0048] See also Figures 1 to 7 The figure shows a vortex self-heating silicon material purification continuous discharge vacuum furnace device, which includes a frame 100, a reactor 200 and a vacuum receiving device 300.

[0049] A slide rail 110 is mounted on the frame 100, one end of which extends to the vacuum receiving device 300. The reactor 200 is slidably mounted on the slide rail 110 using a bracket 210 and a hydraulic lifting rod 220. When receiving the material, the reactor 200 can be moved to the vacuum receiving device 300 and the discharge port 241 of the reactor 200, which also serves as the feeding port, can be docked with the receiving port of the vacuum receiving device 300, so that the silicon material after the reaction in the reactor is received in the vacuum receiving device 300 (see Figure 3 and Figure 4 ).

[0050] During the reaction, the reactor 200 and the vacuum material receiving device 300 are arranged horizontally on both sides of the frame 100 (see Figure 1 and Figure 2This facilitates the direct placement of a product outlet at the bottom of the vacuum collection chamber 310 of the vacuum material receiving device 300, enabling smoother continuous material discharge under vacuum conditions. When the silicon material in the reactor 200 reaches the process temperature, the sublimated silicon monoxide product directly enters the vacuum material receiving chamber 310, eliminating the channel. This prevents the silicon monoxide product from accumulating and deteriorating in the channel, potentially blocking the channel and disrupting production.

[0051] The lower end of the bracket 210 is fixed to the slide rail 110, and the upper end of the bracket 210 is fixed to the bottom of the shell 230 of the reactor 200. The fixed part of the hydraulic lifting rod 220 is fixed to the slide rail 110, and the movable part of the hydraulic lifting rod 220 is connected to the shell 230 of the reactor 200 near the discharge port; see in particular Figure 1 When the hydraulic lifting rod 220 is raised or lowered, the reactor 200 can be driven to flip over, and the discharge port 241 of the reactor 200, which also serves as the feeding port, can be lifted to a certain angle, thereby increasing the loading amount of the silicon carbide graphite crucible; the reactor 200 and the vacuum collecting device 300 are on the same track, which is convenient for docking with the collecting port of the vacuum collecting device 300.

[0052] The reactor 200 is a vortex self-heating reactor, which has fast heating and cooling speeds, shortens production time, and increases output.

[0053] The reactor 200 includes a housing 230 , a crucible 240 , an induction coil 260 , a magnetic yoke 250 , a ramming material 270 , an alumina thermal insulation sealing tape 280 , and a crucible sealing plate 290 .

[0054] The housing 230 is designed as a sealed housing with a vacuum pressure-maintaining function. The crucible 240, the induction coil 260, the magnetic yoke 250, and the ramming mass 270 are arranged in the housing 230, and the ramming mass 270 is filled between the crucible 240 and the housing 230. Ramming mass refers to an amorphous refractory material that is constructed by ramming (manually or mechanically) and hardened under the action of heating above room temperature. It is formed by mixing refractory aggregate, powder, binder, admixture with a certain grade, and adding water or other liquids. According to the material classification, there are high-aluminum, clay, magnesia, dolomite, zirconium and silicon carbide-carbon refractory ramming mass.

[0055] The crucible sealing plate 290 is positioned on the discharge port 241 of the crucible 240, which also serves as the feeding port. The alumina thermal insulation sealing tape 280 seals the ramming material 270, the induction coil 260, and the magnetic yoke 250 between the outer shell 230 and the crucible 240. The alumina thermal insulation sealing tape 280 separates the vacuum receiving chamber 310 of the vacuum receiving device 300 from the induction coil 260, the magnetic yoke 250, and the outer shell 230 of the reactor 200. This prevents a chemical reaction between the alumina and the silicon material, allowing the sublimated silicon monoxide product to enter the vacuum receiving chamber 310 of the vacuum receiving device 300.

[0056] Crucible 240 is a silicon carbide graphite crucible, which does not chemically react with silicon materials, thus not affecting product quality. It is resistant to high temperatures and oxidation, and has a long service life. A magnetic yoke 250 is mounted on the exterior of induction coil 260, securing induction coil 260 to the inner surface of housing 230. This prevents heating of housing 230, support 210, and hydraulic lift rod 220 of reactor 200.

[0057] See especially Figure 4 and Figure 6 A through opening 241a is left between the crucible sealing plate 290 and the discharge port 241 of the crucible 240, which also serves as the feeding port. This through opening 241a can be used for feeding silicon material and exiting the sublimated silicon monoxide product. The area of ​​this through opening 241a is less than one-fourth the area of ​​the discharge port 241 of the crucible 240, which also serves as the feeding port. In this way, the crucible sealing plate 290 blocks more than three-quarters of the area of ​​the discharge port 241 of the crucible 240, which also serves as the feeding port, allowing the horizontal crucible 240 to hold more material. In addition, during discharge, the crucible sealing plate 290 separates the silicon material in the crucible 240 from the vacuum receiving chamber 310, greatly reducing the cooling effect of the vacuum receiving chamber 310 on the silicon material 242 in the crucible 240.

[0058] The discharge port 241 of the reactor 200 , which also serves as the feeding port, is a water-cooled sealing port 201 , and a water-cooled sealing ring 202 is provided at the water-cooled sealing port 201 .

[0059] The vacuum material receiving device 300 includes a vacuum material receiving chamber 310 , a product receiving hopper 320 , a first vacuum discharge valve 330 , a material receiving vacuum chamber 340 , a second vacuum discharge valve 350 , a product collecting cylinder 360 , an electronic scale 370 and a scraping device 380 .

[0060] The vacuum collection chamber 310 is a water-cooled vacuum material receiving chamber constructed from double-layered 310S stainless steel, with the middle layer cooled by water. This allows the sublimated silicon monoxide product to be rapidly cooled to a stable temperature below 400°C. At least one observation mirror 311 is provided on the vacuum collection chamber 310. For example, observation mirrors 311 are located on the top and sides of the vacuum collection chamber 310, allowing for constant observation of the continuous sublimation of the material within the vacuum collection chamber 310, the scraping of the material within the vacuum collection chamber 310, and the collection status of the product in the product receiving hopper 320.

[0061] The scraper device 380 is disposed on the vacuum collection chamber 310. The scraper device 390 includes a scraper motor 381, a scraper reduction drive mechanism 382, ​​and a scraper 383. The scraper reduction drive mechanism 382 is mounted on the vacuum collection chamber 310. The power output end of the scraper reduction drive mechanism 382 extends into the vacuum collection chamber 310, and the scraper 383 is mounted on the power output end of the scraper reduction drive mechanism 382. The power input end of the scraper reduction drive mechanism 382 is connected to the scraper motor 381 and is driven by the scraper motor 381.

[0062] There are three scrapers 383, and the three scrapers 383 are evenly distributed around the circumference. Figure 7 , scraping teeth 383a are arranged on each scraper 383. Like this, because the angle between adjacent scrapers 383 is 120 °, scraping teeth 383a are arranged on the scraper 383, the resistance when the scraper 383 scrapes the material can be effectively reduced.

[0063] The scraping teeth 383a on the three scrapers 383 are positioned differently and are staggered. With the scraping teeth 383a positioned differently and staggered, the three scrapers 383 can scrape all locations on the inner wall of the vacuum collection chamber 310 with one rotation. Driven by the scraper motor 381, the scrapers 383 rotate continuously, continuously scraping silicon monoxide product newly attached to the inner wall of the vacuum collection chamber 310 into the product receiving hopper 320.

[0064] The feed end 321 of the product receiving hopper 320 is connected to the discharge port 312 of the vacuum receiving chamber 310. A first air extraction port 323 is provided on the product receiving hopper 320. The first air extraction port 323 is connected to a first vacuum pump (not shown). The first vacuum pump evacuates the product receiving hopper 320, the vacuum receiving chamber 310, and the interior of the reactor 200.

[0065] The feed port 331 of the first vacuum discharge valve 330 is connected to the discharge end 322 of the product receiving hopper 320. The discharge port 332 of the first vacuum discharge valve 330 is connected to the feed port 341 of the receiving vacuum chamber 340. The receiving vacuum chamber 340 is provided with a second air extraction port 343, which is connected to a second vacuum pump (not shown). The second vacuum pump evacuates the interior of the receiving vacuum chamber 340.

[0066] The discharge port 342 of the material receiving vacuum chamber 340 is connected to the feed port 351 of the second vacuum unloading valve 350, and the discharge port 352 of the second vacuum unloading valve 350 is connected to the feed port 361 of the product collecting cylinder 360; a third air exhaust port 362 is provided on the feed port 361 of the product collecting cylinder 360, and the third air exhaust port 362 is connected to a third vacuum pump (not shown in the figure), and the third vacuum pump vacuums the inside of the product collecting cylinder 360.

[0067] The product collecting cylinder 360 is placed on an electronic scale 370 to weigh the weight of the product collected by the product collecting cylinder 360 .

[0068] The first suction port 323 is provided on the product receiving hopper 320, communicates with the reactor 200 and the vacuum receiving chamber 310 and is away from the scraper 383. When the temperature of the reactor 200 reaches the process temperature, the vacuum suction of the first vacuum pump is stopped to prevent the material from being extracted by the first vacuum pump.

[0069] The second vacuum port 343 is set on the material receiving vacuum chamber 340, and a first vacuum unloading valve 330 is set between the material receiving vacuum chamber 340 and the product receiving hopper 320. When the material receiving vacuum chamber 340 is evacuated by the second vacuum pump and the vacuum degree is greater than that of the vacuum receiving chamber 310, the second vacuum pump is stopped and the first vacuum unloading valve 330 is opened. The product will be pressed into the material receiving vacuum chamber 340, and the first vacuum unloading valve 330 is closed at this time.

[0070] A third vacuum port 362 is located at the feed port 361 of the product collection barrel 360. The product collection barrel 360 is evacuated by a third vacuum pump. The feed port 361 of the product collection barrel 360 is connected to the product collection barrel 360 in a vacuum-tight manner. At this point, the second vacuum discharge valve 350 is opened, and the product is forced into the product collection barrel 360. This process is automatically controlled. When the product collection barrel 360 is full, a weight alarm is activated, notifying the operator to collect the product, thereby achieving continuous discharge of the low-density ultrafine powder silicon monoxide product.

Claims

1. A vortex self-heating silicon material purification continuous discharge vacuum furnace device, comprising: A rack; characterized in that it also includes: a reactor slidably mounted on the frame; a vacuum material collecting device installed on the frame; During production, the reactor is moved to the vacuum material receiving device and the discharge port of the reactor, which also serves as the feeding port, is connected to the receiving port of the vacuum material receiving device, so that the silicon material after the reaction in the reactor is received in the vacuum material receiving device; A slide rail is installed on the frame, one end of the slide rail extends to the vacuum material receiving device, and the reactor is slidably installed on the slide rail; The vacuum material receiving device includes a vacuum material receiving chamber, a product material receiving hopper, a first vacuum discharge valve, a material receiving vacuum chamber, a second vacuum discharge valve, a product collecting cylinder and a third vacuum discharge valve, the feed end of the product material receiving hopper is connected to the discharge port of the vacuum material receiving chamber, a first air exhaust port is provided on the product material receiving hopper, and a first vacuum pump is connected to the first air exhaust port; the feed port of the first vacuum discharge valve is connected to the discharge end of the product material receiving hopper, the discharge of the first vacuum discharge valve is connected to the feed port of the material receiving vacuum chamber, a second air exhaust port is provided on the material receiving vacuum chamber, and a second vacuum pump is connected to the second air exhaust port; the discharge port of the material receiving vacuum chamber is connected to the feed port of the second vacuum discharge valve, and the discharge port of the second vacuum discharge valve is connected to the feed port of the product collecting cylinder; a third air exhaust port is provided on the feed port of the product collecting cylinder, and a third vacuum pump is connected to the third air exhaust port; The reactor is slidably mounted on the slide rail using a bracket and a hydraulic lifting rod, wherein the lower end of the bracket is fixed on the slide rail, the upper end of the bracket is fixed to the bottom of the reactor, the fixed part of the hydraulic lifting rod is fixed on the slide rail, and the movable part of the hydraulic lifting rod is connected to the discharge port of the reactor.

2. The eddy current self-heating silicon material purification continuous discharge vacuum furnace device according to claim 1, characterized in that: During the reaction, the reactor and the vacuum material collecting device are arranged horizontally on both sides of the frame.

3. The eddy current self-heating silicon material purification continuous discharge vacuum furnace device according to claim 2, characterized in that: The reactor includes an outer shell, a magnetic yoke, an induction coil, a ramming material, a crucible, an alumina thermal insulation sealing tape and a crucible sealing plate. The outer shell is designed to be a sealed shell with a vacuum pressure-maintaining function. The crucible, ramming material, induction coil and magnetic yoke are arranged in the outer shell, and the ramming material is filled between the crucible and the outer shell. The crucible sealing plate is arranged on the discharge port of the crucible which also serves as the feeding port. The alumina thermal insulation sealing tape seals the magnetic yoke, induction coil and ramming material between the outer shell and the crucible.

4. The eddy current self-heating silicon material purification continuous discharge vacuum furnace device according to claim 3, characterized in that: The magnetic yoke is installed on the outside of the induction coil and is used to fix the induction coil on the inner surface of the shell.

5. The eddy current self-heating silicon material purification continuous discharge vacuum furnace device according to claim 3, characterized in that: A through opening is left between the crucible sealing plate and the discharge port of the crucible which also serves as the feeding port. The through opening is used for feeding silicon material and exiting the sublimation of silicon monoxide products.

6. The eddy current self-heating silicon material purification continuous discharge vacuum furnace device according to claim 5, characterized in that: The area of ​​the through opening is smaller than one quarter of the area of ​​the discharge opening of the crucible which also serves as the feeding opening.

7. The eddy current self-heating silicon material purification continuous discharge vacuum furnace device according to claim 4, characterized in that: The discharge port of the reactor, which also serves as the feeding port, is a water-cooled sealing port, and a water-cooled sealing ring is provided on the water-cooled sealing port.

8. The eddy current self-heating silicon material purification continuous discharge vacuum furnace device according to claim 7, characterized in that: The vacuum material collecting device further comprises an electronic scale, and the product collecting cylinder is placed on the electronic scale to weigh the weight of the product collected by the product collecting cylinder.

9. The eddy current self-heating silicon material purification continuous discharge vacuum furnace device according to claim 8, characterized in that: At least one observation mirror is provided on the vacuum material receiving cavity.

10. The eddy current self-heating silicon material purification continuous discharge vacuum furnace device according to claim 9, characterized in that: The observation mirrors are arranged on the top and both sides of the vacuum material receiving cavity.

11. The eddy current self-heating silicon material purification continuous discharge vacuum furnace device according to claim 6, characterized in that: The vacuum material receiving device further comprises a scraping device, and the scraping device is arranged on the vacuum material receiving cavity.

12. The eddy current self-heating silicon material purification continuous discharge vacuum furnace device according to claim 11, characterized in that: The scraper device includes a scraper motor, a scraper deceleration drive mechanism and a scraper. The scraper deceleration drive mechanism is installed on the vacuum material receiving cavity. The power output end of the scraper deceleration drive mechanism extends into the vacuum material receiving cavity and the scraper is installed at the power output end of the scraper deceleration drive mechanism. The power input end of the scraper deceleration drive mechanism is connected to the scraper motor.

13. The eddy current self-heating silicon material purification continuous discharge vacuum furnace device according to claim 12, characterized in that: There are three scrapers, which are evenly distributed around the circumference and each of which is provided with scraping teeth.

14. The eddy current self-heating silicon material purification continuous discharge vacuum furnace device according to claim 13, characterized in that: The scraping teeth on the three scrapers are in different positions and are staggered.

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