Anti-reflection glass as well as preparation method and application thereof

Abstract

The invention provides anti-reflection glass and a preparation method and application thereof.The anti-reflection glass comprises a substrate layer and a composite coating layer arranged on the surface of at least one side of the substrate layer, and the composite coating layer comprises a first silicon nitride layer, a first silicon oxide layer, a second silicon nitride layer and a second silicon oxide layer which are sequentially stacked; wherein the first silicon nitride layer of the composite coating layer is connected with the substrate layer. The silicon nitride layers and the silicon oxide layers are alternately arranged in a laminated mode, it can be guaranteed that through optical path difference interference cancellation, reflected light with the specific wavelength is reduced, meanwhile, film layer stress is reduced, film layer cracking is avoided, and the structural stability is improved.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of glass products, and relates to a reflection-reducing glass and a preparation method and application thereof. BACKGROUND

[0002] In the production process of a display screen, a glass cover plate is one of the most important components. Most glass transparent cover plates will produce about 8% of reflected light in use, thereby affecting the clarity of the display screen. At present, a common method is to perform a reflection-reducing coating film treatment on the surface of the transparent glass, so that the reflected light produced on the front and back surfaces of the film layer interferes with each other, thereby canceling the reflected light and increasing the intensity of the transmitted light, so that the glass surface has low reflection and high transmission performance.

[0003] There are three preparation methods for the reflection-reducing film, namely, a vacuum magnetron sputtering method, a high-temperature pyrolysis gas deposition method and a sol-gel method, in which the reflection-reducing film prepared by the vacuum magnetron sputtering method has the best effect. The reflection-reducing film in the prior art is generally prepared by the sol-gel method.

[0004] CN111381297A discloses a high-transmittance reflection-reducing film and a preparation method thereof, which comprises a bottom layer close to a transparent substrate, an intermediate layer and a top layer away from the transparent substrate. The bottom layer and the top layer are both mesoporous SiO2 layers with a refractive index of 1.10-1.30, wherein the thickness of the bottom layer is 5-50 nm, and the thickness of the top layer is 50-200 nm. The intermediate layer is a dense MgF2 or SiO2 layer with a refractive index of 1.35-1.50, and the thickness is 50-200 nm.

[0005] CN109161874A discloses a wide-spectrum reflection-reducing film. It comprises a glass substrate, TiO2(H + ) and two TiO2(OH - ) sol-gel layers with different refractive indexes. The TiO2(H + ), TiO2(OH - ) and TiO2(OH - ) sol-gel layers with different refractive indexes are prepared on the substrate in sequence by the pulling method, wherein each layer of the film is subjected to heat treatment, and the surface of the film is subjected to optimization treatment to improve the stability of the film.

[0006] The method for preparing the reflection-reducing film or the reflection-reducing glass by the above-mentioned scheme has very limited reflection-reducing effect on photovoltaic glass, and has not been able to break through in application fields such as museums, luxury product display cabinets and advertisement screens and electronic device display screens, and has been hindered to a certain extent. SUMMARY

[0007] The application aims to provide a kind of antireflection glass and its preparation method and application, the application can ensure that the light path difference interference is cancelled by alternately arranging silicon nitride layer and silicon oxide layer, reduce the reflection of specific wavelength of light, reduce the stress of film layer, avoid film layer cracking, and improve its structural stability.

[0008] To achieve the purpose of the application, the application adopts the following technical solutions:

[0009] In the first aspect, the application provides an antireflection glass, which comprises a substrate layer and a composite coating layer arranged on at least one side surface of the substrate layer, and the composite coating layer comprises a first silicon nitride layer, a first silicon oxide layer, a second silicon nitride layer and a second silicon oxide layer arranged in sequence.

[0010] The first silicon nitride layer of the composite coating layer is connected with the substrate layer.

[0011] In the antireflection glass, the silicon nitride layer has a high refractive index, which can cause interference cancellation between the light and the silicon nitride film layer on the glass surface, thereby reducing the intensity of reflected light and increasing the light transmittance of the glass. The refractive index of silicon oxide is relatively low, and after coating a thin film of silicon oxide on the surface of the glass, the refractive index difference between the glass and the air interface can be reduced, thereby reducing the reflectivity and increasing the light transmittance. The application adjusts the thickness and refractive index distribution of the silicon oxide film layer to achieve the best antireflection effect. By optimizing the film layer structure, the compactness of the film layer surface structure can be improved, and the film layer porosity can be appropriately reduced, so that the film layer surface is smoother and denser, and the film layer hardness and wear resistance are improved.

[0012] The composite coating layer in the antireflection glass can be arranged on one side of the substrate layer, or can be arranged on both sides of the substrate layer. By combining film layer materials with appropriate thickness and different refractive indexes, the light interference is achieved, the light transmittance of the glass is increased, and the purpose of reducing reflection is achieved.

[0013] Preferably, the substrate layer comprises a float glass.

[0014] Preferably, the thickness of the substrate layer is 0.1mm-12mm, for example, 0.1mm, 0.5mm, 1mm, 2mm or 5mm, etc. The values not listed in this range are also applicable.

[0015] Preferably, the thickness of the first silicon nitride layer is 10nm-25nm, for example, 10nm, 15nm, 18nm, 20nm or 25nm, etc. The values not listed in this range are also applicable.

[0016] Preferably, the thickness of the first silicon oxide layer is 40-60 nm, for example, 40 nm, 45 nm, 50 nm, 55 nm or 60 nm, and the range is not limited to the listed values, and other values not listed in the range are also applicable.

[0017] Preferably, the thickness of the second silicon nitride layer is 40-60 nm, for example, 40 nm, 45 nm, 50 nm, 55 nm or 60 nm, and the range is not limited to the listed values, and other values not listed in the range are also applicable.

[0018] Preferably, the thickness of the second silicon oxide layer is 100-130 nm, for example, 100 nm, 105 nm, 110 nm, 120 nm or 130 nm, and the range is not limited to the listed values, and other values not listed in the range are also applicable.

[0019] The present application can significantly improve the anti-reflective effect, durability and optical performance of the anti-reflective glass by setting the thickness of each silicon nitride layer and silicon oxide layer in the above range.

[0020] In a second aspect, the present application provides a preparation method of the anti-reflective glass according to the first aspect, and the preparation method comprises the following steps:

[0021] After the substrate layer and the silicon target are pretreated, the substrate layer is subjected to first nitriding reaction sputtering, first oxidation reaction sputtering, second nitriding reaction sputtering and second oxidation reaction sputtering using the silicon target in sequence to obtain the anti-reflective glass.

[0022] The method of the present application coats the film layer material with different high and low refractive indexes on the surface of the substrate layer to achieve mutual interference of light, increase the light transmittance of the glass and achieve the purpose of anti-reflection. The process can ensure high light transmittance in the visible light part, meet the low reflectivity requirement, greatly reduce the light transmittance in the ultraviolet spectrum and effectively prevent the damage of ultraviolet light to the eyes, so that the scene is clearer.

[0023] Preferably, the pretreatment of the substrate layer comprises cleaning and drying treatment of the substrate layer.

[0024] The cleaning of the substrate layer in advance can remove impurities such as dust and oil stains.

[0025] Preferably, the pretreatment of the silicon target comprises pre-sputtering treatment of the silicon target.

[0026] The target is subjected to short pre-sputtering in the present application to remove oxides and impurities on the surface of the target and ensure the film coating quality.

[0027] Preferably, the carrier gas of the first nitriding reaction sputtering comprises argon.

[0028] Preferably, the flow rate of the carrier gas for the first nitridation sputtering is 400-500 sccm, for example 400, 420, 450, 480 or 500 sccm, and the like, not limited to the listed values, and other values not listed within the range are also applicable.

[0029] Preferably, the reaction gas for the first nitridation sputtering includes nitrogen.

[0030] Preferably, the flow rate of the reaction gas for the first nitridation sputtering is 600-700 sccm, for example 600, 620, 650, 680 or 700 sccm, and the like, not limited to the listed values, and other values not listed within the range are also applicable.

[0031] Preferably, 1 double-rotating sputtering cathode is used in the first nitridation sputtering process.

[0032] Preferably, the power of the double-rotating sputtering cathode used in the first nitridation sputtering process is 35-45 kW, for example 35, 38, 40, 42 or 45 kW, and the like, not limited to the listed values, and other values not listed within the range are also applicable.

[0033] Preferably, the carrier gas for the first oxidation sputtering includes argon.

[0034] Preferably, the flow rate of the carrier gas for the first oxidation sputtering is 550-650 sccm, for example 550, 580, 600, 620 or 650 sccm, and the like, not limited to the listed values, and other values not listed within the range are also applicable.

[0035] Preferably, the reaction gas for the first oxidation sputtering includes oxygen.

[0036] Preferably, the flow rate of the reaction gas for the first oxidation sputtering is 450-550 sccm, for example 450, 480, 500, 520 or 550 sccm, and the like, not limited to the listed values, and other values not listed within the range are also applicable.

[0037] Preferably, 2 double-rotating sputtering cathodes are used in the first oxidation sputtering process.

[0038] Preferably, the power of a single dual-rotatable sputter cathode during the first oxidation reaction sputtering is 30 kW to 40 kW, such as 30 kW, 32 kW, 35 kW, 38 kW, or 40 kW, and the like, not only limited to the listed values, other values not listed in the range of values are also applicable.

[0039] Preferably, the carrier gas of the first nitridation reaction sputtering includes argon.

[0040] Preferably, the flow rate of the carrier gas of the second nitridation reaction sputtering is 400 sccm to 500 sccm, such as 400 sccm, 420 sccm, 450 sccm, 480 sccm, or 500 sccm, and the like, not only limited to the listed values, other values not listed in the range of values are also applicable.

[0041] Preferably, the reaction gas of the second nitridation reaction sputtering includes nitrogen.

[0042] Preferably, the flow rate of the reaction gas of the second nitridation reaction sputtering is 600 sccm to 700 sccm, such as 600 sccm, 620 sccm, 650 sccm, 680 sccm, or 700 sccm, and the like, not only limited to the listed values, other values not listed in the range of values are also applicable.

[0043] Preferably, 2 dual-rotatable sputter cathodes are used during the second nitridation reaction sputtering.

[0044] Preferably, the power of a single dual-rotatable sputter cathode during the second nitridation reaction sputtering is 50 kW to 70 kW, such as 50 kW, 55 kW, 60 kW, 65 kW, or 70 kW, and the like, not only limited to the listed values, other values not listed in the range of values are also applicable.

[0045] Preferably, the carrier gas of the second oxidation reaction sputtering includes argon.

[0046] Preferably, the flow rate of the carrier gas of the second oxidation reaction sputtering is 550 sccm to 650 sccm, such as 550 sccm, 580 sccm, 600 sccm, 620 sccm, or 650 sccm, and the like, not only limited to the listed values, other values not listed in the range of values are also applicable.

[0047] Preferably, the reaction gas of the second oxidation reaction sputtering includes oxygen.

[0048] Preferably, the flow rate of the sputtering reaction gas in the second nitridation reaction is 450sccm-550sccm, for example, 450sccm, 480sccm, 500sccm, 520sccm or 550sccm, etc., not only limited to the listed values, other values not listed in the range are also applicable.

[0049] Preferably, 6 double-rotating sputtering cathodes are used in the second oxidation reaction sputtering process.

[0050] Preferably, the power of a single double-rotating sputtering cathode in the second oxidation reaction sputtering process is 45kW-55kW, for example, 45kW, 48kW, 50kW, 52kW or 55kW, etc., not only limited to the listed values, other values not listed in the range are also applicable.

[0051] In a third aspect, the application provides an application of the anti-reflective glass as described in the first aspect, the anti-reflective glass is used for glass cover plate.

[0052] The anti-reflective glass can reduce screen reflection and improve contrast ratio when used as a glass cover plate of a display.

[0053] Compared with the prior art, the application has the following beneficial effects:

[0054] (1) The application can ensure the mutual interference of the film layers by alternately arranging the silicon nitride layer and the silicon oxide layer, reduce the reflection of specific wavelengths, reduce the stress of the film layer, avoid the cracking of the film layer, and improve the structural stability.

[0055] (2) The anti-reflective glass has an anti-reflective rate of more than 3.08%, a reflectivity of less than 4.92%, a light transmittance of more than 94.53%, and a film adhesion of 4N / mm 2 The above. BRIEF DESCRIPTION OF DRAWINGS

[0056] Figure 1 is the reflectivity diagram of the anti-reflective glass according to the application example 1.

[0057] Figure 2 is the anti-reflective light transmittance diagram of the anti-reflective glass according to the application example 1. DETAILED DESCRIPTION

[0058] The technical solutions of the application will be further described through specific embodiments. Those skilled in the art should understand that the embodiments are only used to help understand the application and should not be regarded as specific limitations on the application.

[0059] In the preparation process of the anti-reflective glass in the embodiments and the comparative examples, the following pretreatment is performed in advance:

[0060] The float glass with a thickness of 5 mm is cleaned, dried, and impurities such as dust and oil stains are removed. The cleaned glass is carefully loaded into a vacuum chamber of a coating device, and a vacuum system is started to draw the chamber to a required high vacuum state. A silicon target is installed and prepared, and the silicon target is briefly pre-sputtered to remove oxides and impurities on the surface of the target, so as to ensure the coating quality.

[0061] Embodiment 1

[0062] The embodiment provides an anti-reflective glass, which is prepared by the following method.

[0063] The magnetron sputtering power is turned on to perform sputtering on one side of the float glass. Argon is used as a carrier gas at a flow rate of 450 sccm, and nitrogen is used as a reaction gas at a flow rate of 650 sccm. One double-rotating sputtering cathode is used in the sputtering process at a power of 40 kW, to form a first silicon nitride layer with a thickness of 20 nm. Argon is used as a carrier gas at a flow rate of 600 sccm, and oxygen is used as a reaction gas at a flow rate of 500 sccm. Two double-rotating sputtering cathodes are used in the sputtering process at a power of 35 kW for each double-rotating sputtering cathode, to form a first silicon oxide layer with a thickness of 45 nm. Argon is used as a carrier gas at a flow rate of 450 sccm, and nitrogen is used as a reaction gas at a flow rate of 650 sccm. Two double-rotating sputtering cathodes are used in the sputtering process at a power of 55 kW for each double-rotating sputtering cathode, to form a second silicon nitride layer with a thickness of 50 nm. Argon is used as a carrier gas at a flow rate of 600 sccm, and oxygen is used as a reaction gas at a flow rate of 500 sccm. Six double-rotating sputtering cathodes are used in the sputtering process at a power of 50 kW for each double-rotating sputtering cathode, to form a second silicon oxide layer with a thickness of 115 nm, to obtain the anti-reflective glass.

[0064] The reflectivity diagram of the anti-reflective glass is as shown in Figure 1 The anti-reflective transmittance diagram of the anti-reflective glass is as shown in Figure 2

[0065] Embodiment 2

[0066] The embodiment provides an anti-reflective glass, which is prepared by the following method.

[0067] ​The both sides of the float glass are sputtered by opening the magnetron sputtering power supply, argon is used as the carrier gas with a flow rate of 400sccm, nitrogen is used as the reaction gas with a flow rate of 600sccm, one double-rotating sputtering cathode is used in the sputtering process with a power of 35kW, and a first silicon nitride layer with a thickness of 20nm is formed. Argon is used as the carrier gas with a flow rate of 550sccm, oxygen is used as the reaction gas with a flow rate of 450sccm, two double-rotating sputtering cathodes are used in the sputtering process, the power of a single double-rotating sputtering cathode is 30kW, and a first silicon oxide layer with a thickness of 50nm is formed. Argon is used as the carrier gas with a flow rate of 400sccm, nitrogen is used as the reaction gas with a flow rate of 600sccm, two double-rotating sputtering cathodes are used in the sputtering process, the power of a single double-rotating sputtering cathode is 50kW, and a second silicon nitride layer with a thickness of 45nm is formed. Argon is used as the carrier gas with a flow rate of 550sccm, oxygen is used as the reaction gas with a flow rate of 450sccm, six double-rotating sputtering cathodes are used in the sputtering process, the power of a single double-rotating sputtering cathode is 45kW, and a second silicon oxide layer with a thickness of 120nm is formed, thereby obtaining the anti-reflective glass.

[0068] Example 3

[0069] The difference between this example and Example 1 is that the thickness of the first silicon nitride layer is 5nm, and other conditions and parameters are completely the same as those of Example 1.

[0070] Example 4

[0071] The difference between this example and Example 1 is that the thickness of the first silicon nitride layer is 30nm, and other conditions and parameters are completely the same as those of Example 1.

[0072] Example 5

[0073] The difference between this example and Example 1 is that the thickness of the first silicon oxide layer is 30nm, and other conditions and parameters are completely the same as those of Example 1.

[0074] Example 6

[0075] The difference between this example and Example 1 is that the thickness of the first silicon oxide layer is 70nm, and other conditions and parameters are completely the same as those of Example 1.

[0076] Example 7

[0077] The difference between this example and Example 1 is that the thickness of the second silicon nitride layer is 40nm, and other conditions and parameters are completely the same as those of Example 1.

[0078] Example 8

[0079] The difference between this example and Example 1 is that the thickness of the second silicon nitride layer is 60nm, and other conditions and parameters are completely the same as those of Example 1.

[0080] Example 9

[0081] The difference between this example and Example 1 is only that the thickness of the second silicon oxide layer is 80 nm, and other conditions and parameters are completely the same as those of Example 1.

[0082] Example 10

[0083] The difference between this example and Example 1 is only that the thickness of the second silicon oxide layer is 150 nm, and other conditions and parameters are completely the same as those of Example 1.

[0084] Comparative Example 1

[0085] The difference between this comparative example and Example 1 is only that the first silicon nitride layer is not provided, and other conditions and parameters are completely the same as those of Example 1.

[0086] Comparative Example 2

[0087] The difference between this comparative example and Example 1 is only that the first silicon oxide layer is not provided, and other conditions and parameters are completely the same as those of Example 1.

[0088] Comparative Example 3

[0089] The difference between this comparative example and Example 1 is only that the second silicon nitride layer is not provided, and other conditions and parameters are completely the same as those of Example 1.

[0090] Comparative Example 4

[0091] The difference between this comparative example and Example 1 is only that the second silicon oxide layer is not provided, and other conditions and parameters are completely the same as those of Example 1.

[0092] Performance test:

[0093] The reflectivity, transmittance and film adhesion of the anti-reflective glass prepared according to the examples and comparative examples are tested, and the test results are shown in Table 1:

[0094] Table 1

[0095]

[0096]

[0097] As can be seen from Table 1, according to Examples 1-2, the anti-reflective glass described in the present application has an anti-reflectivity of 3.08% or more, a reflectivity of 4.92% or less, a transmittance of 94.53% or more, and a film adhesion of 4 N / mm 2 or more.

[0098] From the comparison of Example 1 and Examples 3-4, it can be seen that the thickness of the first silicon nitride layer in the anti-reflective glass according to the present application affects the performance of the anti-reflective glass. When the thickness of the first silicon nitride layer is controlled to be 10-25 nm, the anti-reflective glass has better performance. If the thickness of the first silicon nitride layer is too thin, the light transmittance will decrease and the reflectance will increase. If the thickness of the first silicon nitride layer is too thick, the light transmittance will also decrease and the reflectance will increase.

[0099] From the comparison of Example 1 and Examples 5-6, it can be seen that the thickness of the first silicon oxide layer in the anti-reflective glass according to the present application affects the performance of the anti-reflective glass. When the thickness of the first silicon oxide layer is controlled to be 40-60 nm, the anti-reflective glass has better performance. If the thickness of the first silicon oxide layer is too thin, the light transmittance will decrease and the reflectance will increase. If the thickness of the first silicon oxide layer is too thick, the light transmittance will also decrease and the reflectance will increase.

[0100] From the comparison of Example 1 and Examples 7-8, it can be seen that the thickness of the second silicon nitride layer in the anti-reflective glass according to the present application affects the performance of the anti-reflective glass. When the thickness of the second silicon nitride layer is controlled to be 40-60 nm, the anti-reflective glass has better performance. If the thickness of the second silicon nitride layer is too thin, the light transmittance will decrease and the reflectance will increase. If the thickness of the second silicon nitride layer is too thick, the light transmittance will also decrease and the reflectance will increase.

[0101] From the comparison of Example 1 and Examples 9-10, it can be seen that the thickness of the second silicon oxide layer in the anti-reflective glass according to the present application affects the performance of the anti-reflective glass. When the thickness of the second silicon oxide layer is controlled to be 100-130 nm, the anti-reflective glass has better performance. If the thickness of the second silicon oxide layer is too thin, the light transmittance will decrease and the reflectance will increase. If the thickness of the second silicon oxide layer is too thick, the light transmittance will also decrease and the reflectance will increase.

[0102] From the comparison of Example 1 and Comparative Example 1, it can be seen that the first silicon nitride layer in the anti-reflective glass according to the present application mainly changes the light propagation path and reflection characteristics. When light is incident from the glass surface, the high-refractive silicon nitride film layer will reflect a part of the light, and the reflected light will interfere with the reflected light from the glass surface. According to the interference principle, the high-refractive film layer with appropriate thickness can cause a phase difference between the reflected lights, so as to offset each other, reduce the intensity of the reflected light, and improve the light transmittance of the glass. The first silicon nitride layer is directly attached to the glass surface, and its dense structure can enhance the bonding force between the film system and the glass (reduce the risk of falling), and at the same time block the diffusion of sodium ions (Na + ) in the glass to the film layer (avoid affecting the optical performance of the film layer). The first silicon nitride layer directly contacts the glass substrate (n≈1.52) as a "bottom high-refractive transition layer", and its main function is to match the refractive index difference between the glass and the upper film system.

[0103] The direct reflectance of glass to air is about 8%, and the first silicon nitride layer can reduce the base reflectance by precisely designing the thickness (usually 1 / 4 wavelength of the target wavelength, i.e. λ / 4n) to form destructive interference between the reflected light at the glass-film interface and the reflected light of the subsequent film layer.

[0104] As can be seen from the comparison between Example 1 and Comparative Example 2, the first silicon oxide layer in the anti-reflective glass of the present application works based on the interference principle of light, and is arranged outside or alternately with the high-refractive-index film layer. The large refractive index difference between the low-refractive-index silicon oxide film layer and the adjacent high-refractive-index silicon nitride film layer can cause significant reflection and refraction of light at the film layer interface. By reasonably designing the thickness and sequence of the film layers, the light reflected by the low-refractive-index film layer can interfere destructively with other reflected light, further reducing the reflectance and enhancing the anti-reflective effect. At the same time, the low-refractive-index film layer can also protect the high-refractive-index film layer, improving the overall wear resistance and chemical stability of the film layer.

[0105] As can be seen from the comparison between Example 1 and Comparative Example 3, the second silicon nitride layer in the anti-reflective glass of the present application mainly functions to change the propagation path and reflection characteristics of light. When light is incident from the glass surface, a portion of the light will be reflected by the high-refractive-index film layer, and this reflected light will interfere with the reflected light from other film layers or the glass surface. According to the interference principle, a high-refractive-index film layer with an appropriate thickness can cause a phase difference between the reflected lights, thereby canceling each other out, reducing the intensity of the reflected light, and improving the light transmission of the glass. The second silicon nitride layer is arranged in the middle of the film system, which on the one hand improves the overall wear resistance of the film system (reduces scratches during daily use) by its high hardness, and on the other hand can isolate the water vapor and pollutants (such as acid rain and dust) in the external environment from eroding the underlying film, thereby prolonging the service life of the film system.

[0106] From the comparison between Example 1 and Comparative Example 4, it can be seen that the second silica layer in the anti-reflective glass according to the present application functions based on the interference principle of light, and is arranged outside or alternately with the high refractive index film layer. The low refractive index film layer and the adjacent high refractive index film layer form a large refractive index difference, which can cause obvious reflection and refraction of light at the interface of the film layers. By reasonably designing the thickness and sequence of the film layers, the light reflected by the low refractive index film layer interferes destructively with other reflected light, further reducing the reflectivity and enhancing the anti-reflective effect. At the same time, the low refractive index film layer can also protect the high refractive index film layer, and improve the overall wear resistance and chemical stability of the film layer. The second silica layer as the outermost layer has excellent chemical stability (acid-resistant, alkali-resistant, oxidation-resistant) and relatively high hardness (Mohs hardness 6-7), which can protect the internal silicon nitride layer from friction and scratching, and prevent oxidation failure of metal ions (if the film system contains metal layers). SiO2 is in direct contact with air (refractive index ≈ 1.0), and its low refractive index characteristics can minimize the reflection at the air-film layer interface (according to the Fresnel formula, the smaller the refractive index difference between two media, the lower the reflectivity), which is the key outer layer to achieve surface anti-reflection.

[0107] The applicant declares that the above description is only a specific embodiment of the present application, but the protection scope of the present application is not limited thereto. It should be understood by those skilled in the art that any changes or replacements within the technical scope disclosed by the present application can be easily conceived by those skilled in the art, and all such changes or replacements fall within the protection scope and disclosure scope of the present application.

Claims

1. An antireflective glass, characterized by, The anti-reflective glass comprises a substrate layer and a composite coating layer arranged on at least one side surface of the substrate layer, and the composite coating layer comprises a first silicon nitride layer, a first silicon oxide layer, a second silicon nitride layer and a second silicon oxide layer arranged in sequence. The first silicon nitride layer of the composite coating layer is connected with the substrate layer.

2. The reduced reflection glass according to claim 1, wherein The substrate layer comprises a float glass. Preferably, the thickness of the substrate layer is 0.1mm-12mm.

3. The antireflective glass according to claim 1 or 2, wherein The thickness of the first silicon nitride layer is 10nm-25nm. Preferably, the thickness of the first silicon oxide layer is 40nm-60nm. Preferably, the thickness of the second silicon nitride layer is 20nm-40nm. Preferably, the thickness of the second silicon oxide layer is 100nm-130nm.

4. A method of producing the antireflection glass according to any one of claims 1 to 3, characterized by, The preparation method comprises the following steps: After the substrate layer and the silicon target are pretreated respectively, the substrate layer is subjected to first nitriding reaction sputtering, first oxidation reaction sputtering, second nitriding reaction sputtering and second oxidation reaction sputtering in sequence using the silicon target, so as to obtain the anti-reflective glass.

5. The production method according to claim 4, wherein The pretreatment of the substrate layer comprises cleaning and drying treatment of the substrate layer. Preferably, the pretreatment of the silicon target comprises pre-sputtering treatment of the silicon target.

6. The production method according to claim 4 or 5, characterized by, The carrier gas of the first nitriding reaction sputtering comprises argon. Preferably, the flow rate of the carrier gas of the first nitriding reaction sputtering is 400sccm-500sccm. Preferably, the reaction gas of the first nitriding reaction sputtering comprises nitrogen. Preferably, the flow rate of the reaction gas of the first nitriding reaction sputtering is 600sccm-700sccm. Preferably, 1 double-rotating sputtering cathode is used in the first nitriding reaction sputtering. Preferably, the power of the double-rotating sputtering cathode in the first nitriding reaction sputtering is 35kW-45kW.

7. The production method according to any one of claims 4 to 6, wherein The carrier gas of the first oxidation reaction sputtering comprises argon. Preferably, the flow rate of the carrier gas of the first oxidation reaction sputtering is 550sccm-650sccm. Preferably, the reaction gas of the first oxidation reaction sputtering comprises oxygen. Preferably, the flow rate of the reaction gas of the first nitriding reaction sputtering is 450sccm-550sccm. Preferably, 2 double-rotating sputtering cathodes are used in the first oxidation reaction sputtering. Preferably, the power of a single double-rotating sputtering cathode in the first oxidation reaction sputtering is 30kW-40kW.

8. The production method according to any one of claims 4 to 7, wherein The carrier gas of the first nitriding reaction sputtering comprises argon. Preferably, the flow rate of the carrier gas of the second nitriding reaction sputtering is 400sccm-500sccm. Preferably, the reaction gas of the second nitriding reaction sputtering comprises nitrogen. Preferably, the flow rate of the reaction gas of the second nitriding reaction sputtering is 600sccm-700sccm. Preferably, 2 double-rotating sputtering cathodes are used in the second nitriding reaction sputtering. Preferably, the power of a single double-rotating sputtering cathode in the second nitriding reaction sputtering is 80kW-90kW.

9. The production method according to any one of claims 4 to 8, wherein The carrier gas of the second oxidation reaction sputtering comprises argon. Preferably, the flow rate of the carrier gas for the second oxidation reaction sputtering is 550sccm-650sccm; Preferably, the reaction gas for the second oxidation reaction sputtering comprises oxygen; Preferably, the flow rate of the reaction gas for the second nitridation reaction sputtering is 450sccm-550sccm; Preferably, 6 double-rotary sputtering cathodes are used in the process of the second oxidation reaction sputtering; Preferably, the power of a single double-rotary sputtering cathode in the process of the second oxidation reaction sputtering is 45kW-55kW.

10. Use of an antireflective glass according to any one of claims 1 to 3, characterized in that The anti-reflective glass is used for glass cover plate.

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