A simple, efficient and high-energy ion beam emission device

Abstract

The present invention discloses a simple, efficient and high-energy ion beam emission device, which relates to the technical field of ion beam emission devices and includes an ion beam generation component, an ion beam transmission component and an ion beam extraction component; the ion beam transmission component is located between the ion beam generation component and the ion beam transmission component; the ion beam generation component includes a ceramic sleeve and a metal cathode; the inner wall of the ceramic sleeve is connected to the outer wall of the metal cathode through an engaging structure. The metal cathode and the ceramic are in full contact through the engaging structure, without carbon coating, greatly improving the output of plasma and enhancing the efficiency; the acceleration electrode adopts a V-shaped structure, and the uniformity change of the ion beam current density in the radial direction is not more than 5%, while significantly expanding the plasma in the width direction and increasing the beam spot size by more than 1 time, greatly improving the uniformity and transverse width; the extraction efficiency is greatly improved by a pulsed strong magnetic field. The maximum beam current of the overall ion beam device can be 100 mA, the maximum energy can be 100 keV, and the stable working duration is not less than 100 h.

Description

Technical Field

[0001] The present invention relates to the technical field of ion beam emission devices, and particularly to a simple, efficient and high-energy ion beam emission device. Background Art

[0002] In recent years, due to the development of semiconductor physics, interface physics and thin film technology in electronic information, ion beam technology has become a research hot technology in related fields. Ion implantation is a process of introducing an ion beam accelerated to a certain energy into the surface layer of a solid material to change the physical and chemical properties of the surface layer. To achieve ion implantation, the formation, acceleration and guidance of the ion beam must be completed. Ion beam technology includes ion generation, ion transport and guidance, ion acceleration and ion implantation. Ion beam technology was first developed as a doping technology for semiconductor materials and has the advantages of high speed, low power consumption, good stability and high yield in the preparation of semiconductor devices and integrated circuits. Ion beam technology also has important application value in the surface modification of metals, strengthening the metal surface and improving surface hardness, wear resistance and corrosion resistance. Ion beam technology is also widely used in fields such as changing the refractive index of optical materials, increasing the critical temperature of superconducting materials, surface catalysis, changing the magnetization intensity of magnetic materials, increasing the movement speed of magnetic bubbles and simulating radiation damage. Summary of the Invention

[0003] To solve the above technical problems, the present invention provides a simple, efficient and high-energy ion beam emission device to solve the technical problems of high energy consumption, poor continuous working stability, small beam current, narrow width, etc. of existing metal ion beam emission devices.

[0004] To achieve the above object, the present invention provides the following solutions:

[0005] The present invention provides a simple, efficient and high-energy ion beam emission device, including an ion beam generation component, an ion beam transmission component and an ion beam transport component; the ion beam transmission component is located between the ion beam generation component and the ion beam transport component; the ion beam generation component includes a ceramic sleeve and a metal cathode; the inner wall of the ceramic sleeve is connected to the outer wall of the metal cathode through an engagement structure.

[0006] Optionally, the engagement structure includes internal teeth provided on the inner wall of the ceramic sleeve and external teeth provided on the outer wall of the metal cathode, and the internal teeth and the external teeth have the same size.

[0007] Optionally, the tooth height of the internal teeth and the external teeth is 0.1-0.8 mm, and the tooth width is 0.1-0.6 mm.

[0008] Optionally, the engagement structure includes 10-200 of the internal teeth or the external teeth.

[0009] Optionally, the ion beam transmission assembly includes a trigger electrode, an expansion cup, and a pulsed magnetic field; the trigger electrode is sleeved on the outer wall of the ion beam emission end of the ion beam generation assembly, the expansion cup is located between the trigger electrode and the pulsed magnetic field, and the pulsed magnetic field is located on the side close to the ion beam transmission assembly.

[0010] Optionally, the trigger voltage of the trigger electrode is 6 - 10 kV, the trigger frequency is 1 - 50 Hz, the maximum trigger current is not less than 800 A, and the ion beam current formed by each trigger is not less than 2 mA.

[0011] Optionally, the expansion cup is made of a magnetically conductive material with a relative magnetic permeability of not less than 200 H / m.

[0012] Optionally, the pulsed magnetic field current is 10 - 100 A, the magnetic field strength is 1 - 100 mT, and the frequency is 1 - 100 Hz; the trigger electrode and the pulsed magnetic field have the same frequency.

[0013] Optionally, the ion beam acceleration assembly includes a first electrode and an acceleration electrode; the acceleration electrode has a V-shaped structure; the first electrode is located at one end close to the pulsed magnetic field, and the acceleration electrode is located at one end far from the pulsed magnetic field.

[0014] Optionally, the voltage between the expansion cup and the first electrode is 100 - 1000 V.

[0015] Optionally, the acceleration voltage of the acceleration electrode is 10 - 50 kV, the change in the acceleration voltage does not exceed 5%, the intermediate spacing between the acceleration electrode and the first electrode is 3 mm, which decreases sequentially along the radial direction, and the outermost spacing is 1 mm.

[0016] The present invention has achieved the following technical effects compared with the prior art:

[0017] 1. The metal cathode and the ceramic are in full contact through the meshing structure, without carbon coating, the resistance is 1 - 2 MΩ, the specific surface area is increased by not less than 80%, the amount of plasma during triggering is increased by 10 - 50%, and the purity of the formed metal ion beam is increased by more than 10%, greatly improving the output of plasma and the efficiency;

[0018] 2. The acceleration electrode has a V-shaped structure, the uniformity change of the ion beam current in the radial direction is not more than 5%, and at the same time, the plasma expands significantly in the width direction, the beam spot size increases by more than 1 time, the beam spot size is (100 - 200 mm) × (300 - 800 mm), and the extraction efficiency of the acceleration electrode is greater than 40%, greatly improving the uniformity and the lateral width;

[0019] 3. The extraction efficiency is significantly improved by pulsed high magnetic fields. The maximum beam current of the overall ion beam device can be 100 mA, the maximum energy can be 100 keV, and the stable operating duration is not less than 100 h. Description of the Drawings

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required in the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0021] Figure 1 It is a schematic lateral sectional view of the metal cathode and the ceramic sleeve in the simple, efficient and high-energy ion beam emission device of the present invention;

[0022] Figure 2 It is a schematic transverse sectional view of the metal cathode and the ceramic sleeve in the simple, efficient and high-energy ion beam emission device of the present invention;

[0023] Figure 3 It is a schematic structural view of the ion beam transmission component in the simple, efficient and high-energy ion beam emission device of the present invention;

[0024] Figure 4 It is a schematic structural view of the ion beam acceleration component in the simple, efficient and high-energy ion beam emission device of the present invention;

[0025] Figure 5 It is a flow chart of the simple, efficient and high-energy ion beam emission device of the present invention;

[0026] Figure 6 It is the relationship between the arc voltage and the current between the expansion cup and the first electrode in the simple, efficient and high-energy ion beam emission device of the present invention;

[0027] Figure 7 It is the relationship between the arc voltage and the pulsed ion beam current between the expansion cup and the first electrode in the simple, efficient and high-energy ion beam emission device of the present invention.

[0028] Description of the reference numerals: 101, metal cathode; 102, ceramic sleeve; 202, pulsed magnetic field; 203, expansion cup; 204, trigger electrode; 207, plasma; 301, acceleration electrode; 303, first electrode. Detailed Embodiments

[0029] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0030] As Figures 1 to 7 shown, this embodiment provides a simple, efficient and high-energy ion beam emission device, including an ion beam generation component, an ion beam transmission component and an ion beam transmission component; the ion beam transmission component is located between the ion beam generation component and the ion beam transmission component; the ion beam generation component includes a ceramic sleeve 102 and a metal cathode 101; the inner wall of the ceramic sleeve 102 is connected to the outer wall of the metal cathode 101 through an engaging structure.

[0031] In this specific embodiment, the engaging structure includes internal teeth provided on the inner wall of the ceramic sleeve 102 and external teeth provided on the outer wall of the metal cathode 101, and the internal teeth and the external teeth have the same size. More specifically, the tooth height of the internal teeth and the external teeth is 0.5 mm, and the tooth width is 0.3 mm. There are 100 internal teeth and external teeth in the engaging structure.

[0032] The ion beam acceleration component includes a first electrode 303 and an acceleration electrode 301; the acceleration electrode 301 is of a V-shaped structure; the first electrode 303 is located at one end close to the pulsed magnetic field 202, and the acceleration electrode 301 is located at one end far from the pulsed magnetic field 202. The voltage between the expansion cup 203 and the first electrode 303 is 100 - 1000 V. The acceleration voltage of the acceleration electrode 301 is 10 - 50 kV, and the change in the acceleration voltage does not exceed 5%. The intermediate distance between the acceleration electrode 301 and the first electrode 303 is 3 mm, which decreases sequentially along the radial direction, and the outermost edge distance is 1 mm.

[0033] The ion beam acceleration component includes a first electrode 303 and an acceleration electrode 301; the acceleration electrode 301 is of a V-shaped structure; the first electrode 303 is located at the end close to the pulsed magnetic field 202, and the acceleration electrode 301 is located at the end far from the pulsed magnetic field 202. The voltage between the expansion cup 203 and the first electrode 303 is 100 - 1000 V. The acceleration voltage of the acceleration electrode 301 is 10 - 50 kV, and the change in the acceleration voltage does not exceed 5%. The intermediate distance between the acceleration electrode 301 and the first electrode 303 is 3 mm, which decreases sequentially along the radial direction, and the outermost edge distance is 1 mm.

[0034] The specific process of the simple, efficient and high-energy ion beam emission device in the present invention is as follows:

[0035] An arc discharge occurs between the S01 metal cathode 101 and the trigger electrode 204 to form a plasma 207.

[0036] S02 The plasma 207 diffuses into the expansion cup 203.

[0037] S03 The plasma 207 in the expansion cup 203 is guided to the first electrode 303 by the pulsed magnetic field 202.

[0038] S04 The plasma 207 in the first electrode 303 is accelerated by the acceleration electrode 301.

[0039] S05 An ion beam is extracted.

[0040] The metal plasma 207 formation region includes the metal cathode 101, the anode, and the trigger electrode. The circuit between the metal cathode 101 and the anode is called the main arc circuit. The main arc voltage is applied between the metal cathode 101 and the anode. Before the trigger discharge, the metal cathode 101 and the anode are isolated by a vacuum channel, and the main arc circuit does not form a loop, so arc ignition cannot occur. The trigger electrode 204 is very close to the metal cathode 101. A trigger voltage of 6 - 10 kV is applied to the trigger electrode 204. When the trigger signal arrives, the ceramic sleeve 102 between the trigger electrode 204 and the metal cathode 101 is broken down, generating a vacuum spark discharge, thereby generating cathode material plasma 207 on the surface of the metal cathode 101. The bonding between the metal cathode 101 and the ceramic sleeve 102 directly affects the number of ion beams generated each time. The traditional method is to coat carbon to make the resistance between the cathode and the trigger electrode 204 1 - 2 MΩ. The present invention realizes the bonding between the cathode and the ceramic sleeve 102 through a corrugated meshing structure, greatly increasing its specific surface area and the number of ions formed each time the trigger is applied.

[0041] After the ion beam is generated, it diffuses into the expansion cup 203. An arc voltage of 100 - 1000 V is applied between the expansion cup and the first electrode 303; at the same time, a strong pulsed magnetic field 202 is applied between the expansion cup 203 and the first electrode 303 to confine the ion beam, improve its transmission efficiency, and reduce losses, with the loss not exceeding 15%. The current of the pulsed magnetic field 202 is 10 - 100 A, the magnetic field strength is 1 - 100 mT, and the frequency is 1 - 100 Hz, which is the same as the trigger frequency. The strong pulsed magnetic field 202 is at the same potential as the first electrode 303. When at different potentials, it seriously affects the magnetic field efficiency, and at the same time, the working stability of the magnetic field is weakened.

[0042] After the ion beam passes through the expansion cup 203 to the first electrode 303, a high voltage is set on the second electrode, with the voltage being 10 - 50 kV, and the distance between the acceleration electrode 301 and the first electrode 303 is 1 - 3 mm. The number of plasma 207 passing through the first electrode 303 is greater than 60%; then it is accelerated and extracted through 301, and the extraction efficiency is greater than 40%.

[0043] It should be noted that for those skilled in the art, it is obvious that the present invention is not limited to the details of the above exemplary embodiments, and the present invention can be implemented in other specific forms without departing from the spirit or basic characteristics of the present invention. Therefore, from any point of view, the embodiments should be regarded as exemplary and non-limiting. The scope of the present invention is defined by the appended claims rather than the above description. Therefore, all changes falling within the meaning and scope of the equivalent elements of the claims are intended to be embraced within the present invention, and any reference signs in the claims should not be regarded as limiting the claims involved.

[0044] Specific examples are used in this specification to illustrate the principles and implementation manners of the present invention. The description of the above embodiments is only for helping to understand the method and its core idea of the present invention; at the same time, for those of ordinary skill in the art, according to the idea of the present invention, there will be changes in the specific implementation manners and application scopes. In summary, the content of this specification should not be construed as a limitation to the present invention.

Claims

1. A simple, efficient and high-energy ion beam emission device, characterized in that, It includes an ion beam generation component, an ion beam transmission component, and an ion beam extraction component; the ion beam transmission component is located between the ion beam generation component and the ion beam extraction component; the ion beam generation component includes a ceramic sleeve and a metal cathode; the inner wall of the ceramic sleeve is connected to the outer wall of the metal cathode through an engagement structure; The engagement structure includes internal teeth provided on the inner wall of the ceramic sleeve and external teeth provided on the outer wall of the metal cathode, and the internal teeth and the external teeth have the same size; The ion beam transmission component includes a trigger electrode, an expansion cup, and a pulsed magnetic field; the trigger electrode is sleeved on the outer wall of the ion beam emission end of the ion beam generation component, the expansion cup is located between the trigger electrode and the pulsed magnetic field, and the pulsed magnetic field is located on the side close to the ion beam transmission component; The trigger voltage of the trigger electrode is 6 - 10 kV, the trigger frequency is 1 - 50 Hz, the maximum trigger current is not less than 800 A, and the ion beam current formed by each trigger is not less than 2 mA; The current of the pulsed magnetic field is 10 - 100 A, the magnetic field strength is 1 - 100 mT, and the frequency is 1 - 100 Hz; the trigger electrode and the pulsed magnetic field have the same frequency; The ion beam acceleration component includes a first electrode and an acceleration electrode; the acceleration electrode is of a V-shaped structure; the first electrode is located at one end close to the pulsed magnetic field, and the acceleration electrode is located at one end far from the pulsed magnetic field; The acceleration voltage of the acceleration electrode is 10 - 50 kV, the change in the acceleration voltage does not exceed 5%, the intermediate distance between the acceleration electrode and the first electrode is 3 mm, which decreases sequentially along the radial direction, the outermost edge distance is 1 mm, the beam spot size is 300 - 600 mm, the emittance of the extracted ion beam is 4 - 200π mm·mRad, and the energy spread of the ions is less than 10%.

2. The simple, efficient and high-energy ion beam emission device according to claim 1, characterized in that The tooth height of the internal teeth and the external teeth is 0.1 - 0.8 mm, and the tooth width is 0.1 - 0.6 mm; no carbon coating treatment is required, and the resistance between the ceramic sleeve and the metal cathode is 1 - 2 MΩ.

3. The simple, efficient and high-energy ion beam emission device according to claim 1 or 2, characterized in that, The engagement structure includes 10 - 200 of the internal teeth or the external teeth, the specific surface area of the metal cathode is increased by more than 20%, and the number of ions formed by each trigger is increased by more than 15%.

4. The simple, efficient and high-energy ion beam emission device according to claim 1, characterized in that, The expansion cup is made of a magnetically conductive material, and the relative magnetic permeability is not less than 200 H / m.

5. The simple, efficient and high-energy ion beam emission device according to claim 1, characterized in that The voltage between the expansion cup and the first electrode is 100 - 1000 V.

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