Self-heating effect measurement method based on spice model, simulation system
By using a SPICE model-based method for measuring the self-heating effect, a measurement structure for field-effect transistors (FETs) was established, current-voltage curves were generated, and self-heating effect parameters were determined. This solved the problem of high-precision measurement and simulation of the self-heating effect of FETs and improved the accuracy of device performance prediction.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SIRIUS CORE SEMICON (CHENGDU) CO LTD
- Filing Date
- 2022-05-23
- Publication Date
- 2026-07-03
AI Technical Summary
Existing technologies struggle to accurately measure and simulate the self-heating effect of field-effect transistors, which impacts device performance, especially in small-sized devices.
Based on the SPICE model, the first and second measurement structures of the reference field-effect transistor are established to generate current-voltage curves. The curves are compared to obtain the self-heating effect parameters, and the exponential formula parameters are determined and written into the simulation circuit model card to form a self-heating effect model.
This technology enables high-precision measurement and simulation of the self-heating effect parameters of field-effect transistors, improving the accuracy of performance prediction for devices in practical applications.
Smart Images
Figure CN115526136B_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of semiconductor simulation technology, and in particular relates to a method and simulation system for measuring self-heating effect based on the SPICE model. Background Technology
[0002] The impedance of a field-effect transistor (FET) in the current conduction path generates excess heat, known as the self-heating effect (SHE). The self-heating effect reduces the switching speed of the FET and may even cause leakage defects. In particular, as the process technology evolves, the heat dissipation space of small-sized devices becomes smaller, and the SHE becomes more and more obvious.
[0003] Since SHE affects device performance, it is urgent to design a high-precision temperature simulation model of the device self-heating effect in order to obtain the self-heating effect parameters of the field-effect transistor in practical applications. Summary of the Invention
[0004] The purpose of this invention is to provide a method and simulation system for measuring the self-heating effect based on the SPICE model, aiming to provide a high-precision temperature simulation model of the self-heating effect of devices, so as to obtain the self-heating effect parameters of field-effect transistors in practical applications.
[0005] This application also provides a method for measuring the self-heating effect based on the SPICE model, the method comprising:
[0006] The first and second measurement structures are established based on a reference field-effect transistor;
[0007] A first current-voltage curve and a second current-voltage curve are generated under the first measurement structure and the second measurement structure, respectively.
[0008] Generate corresponding self-heating effect parameters based on the first current-voltage curve and the second current-voltage curve;
[0009] The parameters of the exponential formula applied to the self-heating effect model are determined based on the self-heating effect parameters.
[0010] Write the parameters of the exponential formula into the simulation circuit simulator model card.
[0011] In one embodiment, establishing the first and second measurement structures based on a reference field-effect transistor includes:
[0012] An RC impedance structure is provided at the source, drain, and gate of the reference field-effect transistor;
[0013] Select any one of the source, drain, and gate of the reference field-effect transistor as the test endpoint to establish a first measurement structure and a second measurement structure; wherein the test endpoint in the first measurement structure has no self-heating effect, and the test endpoint in the second measurement structure has a self-heating effect.
[0014] In one embodiment, establishing the first and second measurement structures based on a reference field-effect transistor includes:
[0015] The first measurement structure is established based on the condition that the gate of the reference field-effect transistor has no self-heating effect;
[0016] The second measurement structure is established based on the condition that the gate of the reference field-effect transistor has a self-heating effect.
[0017] In one embodiment, establishing the first and second measurement structures based on a reference field-effect transistor includes:
[0018] The first measurement structure is established based on the condition that the drain of the reference field-effect transistor has no self-heating effect.
[0019] The second measurement structure is established based on the condition that the drain of the reference field-effect transistor has a self-heating effect.
[0020] In one embodiment, establishing the first and second measurement structures based on a reference field-effect transistor includes:
[0021] The first measurement structure is established based on the condition that the source of the reference field-effect transistor has no self-heating effect;
[0022] The second measurement structure is established based on the condition that the source of the reference field-effect transistor has a self-heating effect.
[0023] In one embodiment, generating a first current-voltage curve and a second current-voltage curve under the first measurement structure and the second measurement structure, respectively, includes:
[0024] The first and second measurement structures are driven at the same frequency, and the first current-voltage curve and the second current-voltage curve of the first and second measurement structures under the same frequency driving are detected respectively.
[0025] In one embodiment, generating the corresponding self-heating effect parameters based on the first current-voltage curve and the second current-voltage curve includes:
[0026] The first current-voltage curve and the second current-voltage curve are compared, and a corresponding self-heating effect parameter is generated based on the comparison result; wherein, the self-heating effect parameter is used to determine the effect of the self-heating effect on the performance of the reference field-effect transistor.
[0027] In one embodiment, the self-heating effect measurement method further includes:
[0028] Obtain the current and voltage parameters of the field-effect transistor under test;
[0029] The current and voltage parameters are written into the simulation circuit simulator model card to obtain the temperature model parameters of the field-effect transistor under test.
[0030] A second aspect of this application also provides a simulation system, the simulation system comprising:
[0031] The model building module is used to build the first and second measurement structures based on the reference field-effect transistor.
[0032] The test module is used to generate a first current-voltage curve and a second current-voltage curve under the first measurement structure and the second measurement structure, respectively.
[0033] The test comparison module is used to generate corresponding self-heating effect parameters based on the first current-voltage curve and the second current-voltage curve.
[0034] The calculation module is used to determine the exponential formula parameters applied to the self-heating effect model based on the self-heating effect parameters;
[0035] The model import module is used to write the parameters of the exponential formula into the simulation circuit simulator model card.
[0036] In one embodiment, the simulation system further includes:
[0037] The temperature detection module is used to acquire the current and voltage parameters of the field-effect transistor under test, and write the current and voltage parameters into the simulation circuit simulator model card to obtain the temperature model parameters of the field-effect transistor under test.
[0038] This application provides a method and simulation system for measuring the self-heating effect based on a SPICE model. First, a first measurement structure and a second measurement structure are established based on a reference field-effect transistor (FET). A first current-voltage curve and a second current-voltage curve are generated under the first and second measurement structures, respectively. Then, corresponding self-heating effect parameters are generated based on the first and second current-voltage curves. The self-heating effect parameters are used to determine the exponential formula parameters applied to the reference FET. The exponential formula parameters are written into a model card, thereby simulating the self-heating effect of the FET based on the SPICE model, thus obtaining the self-heating effect parameters of the FET in practical applications. Attached Figure Description
[0039] Figure 1 A schematic flowchart of a self-heating effect measurement method provided for one embodiment of this application;
[0040] Figure 2 A flowchart illustrating step S10 as provided in one embodiment of this application;
[0041] Figure 3 A schematic diagram of a reference field-effect transistor provided for one embodiment of this application;
[0042] Figure 4a , Figure 4b A schematic diagram of a measurement structure provided for one embodiment of this application;
[0043] Figure 5a , Figure 5b A schematic diagram of a measurement structure provided for one embodiment of this application;
[0044] Figure 6 A schematic flowchart of a self-heating effect measurement method provided for another embodiment of this application;
[0045] Figure 7 A schematic diagram of a simulation system provided for one embodiment of this application;
[0046] Figure 8 A schematic diagram of a simulation system provided for one embodiment of this application. Detailed Implementation
[0047] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.
[0048] This application also provides a method for measuring the self-heating effect based on the SPICE model, see [link to relevant documentation]. Figure 1As shown, the self-heating effect measurement method includes steps S10 to S50.
[0049] In step S10, a first measurement structure and a second measurement structure are established based on a reference field-effect transistor.
[0050] In this embodiment, by establishing a simulated device structure and testing its electrical curves (e.g., voltage and current curves), the effect of self-heating on the electrical properties of the device is confirmed by comparing the two sets of electrical curves.
[0051] Specifically, a first measurement structure and a second measurement structure are set up based on the same reference field-effect transistor for comparison. In the two sets of measurement structures, the test endpoints of one set of measurement structures have a self-heating effect, while the test endpoints of the other set of measurement structures do not have a self-heating effect. Apart from the test endpoints, the other structures in the two sets of measurement structures are completely identical. The electrical curves of the test endpoints are obtained under the same test conditions (e.g., test voltage, test current, etc.). The impact of the self-heating effect on the device performance is deduced based on the difference in the electrical curves of the test endpoints.
[0052] In one embodiment, see Figure 2 As shown, in step S10, establishing the first measurement structure and the second measurement structure based on the reference field-effect transistor may include steps S111 and S112.
[0053] In step S111, RC impedance structures are respectively provided at the source, drain, and gate of the reference field-effect transistor to participate in... Figure 3 As shown, RC impedances that vary with temperature are provided at all three terminals (source S, drain D, and gate G) of the reference field-effect transistor 104. For example, RC impedance 101 is provided at the gate G, RC impedance 102 is provided at the source S, and RC impedance 103 is provided at the drain D. The self-heating effect at the substrate end of the reference field-effect transistor 104 is relatively small and can be ignored.
[0054] In practical applications, when current is turned on, the ambient temperature at the terminals of the field-effect transistor rises. Due to the self-heating effect, the RC impedance increases and the electrical performance curve deteriorates.
[0055] In step S112, any one of the source, drain, and gate of the reference field-effect transistor is selected as the test endpoint to establish a first measurement structure and a second measurement structure; wherein, the test endpoint in the first measurement structure has no self-heating effect, and the test endpoint in the second measurement structure has a self-heating effect.
[0056] In this embodiment, any one of the source, drain, and gate of the reference field-effect transistor is selected as the test endpoint. In a specific setting, the test endpoint of the first measurement structure is set to have no self-heating effect, and the test endpoint of the second measurement structure is set to have a self-heating effect. The first measurement structure is used as a control group, and the difference in the electrical curves of the two test structures is tested to determine the impact of the test endpoint of the field-effect transistor on the device performance when heat dissipation is not possible.
[0057] In a specific application embodiment, in step S10, the first measurement structure can be established by taking the absence of self-heating effect of the gate of the reference field-effect transistor as a condition; and the second measurement structure can be established by taking the presence of self-heating effect of the gate of the reference field-effect transistor as a condition.
[0058] See Figure 4a As shown, a sufficiently large space can be provided in the gate region of the reference field-effect transistor to create a condition without self-heating effect, thereby establishing the first measurement structure. For example, combined with... Figure 4a As shown, the space around the polysilicon gate is large enough to allow the gate end to dissipate heat completely, or the temperature during operation is lower than the preset temperature value. In this case, the self-heating effect of the device can be ignored.
[0059] As a control group structure, the second measurement structure needs to possess a self-heating effect, for example, by combining Figure 4b As shown, the gate polycrystalline silicon is surrounded by a carbon nanotube structure (CNT structure), so the device cannot dissipate heat completely during operation, and the gate end has a self-heating effect.
[0060] In a specific application embodiment, in step S10, the first measurement structure can be established by taking the condition that the drain of the reference field-effect transistor has no self-heating effect as the condition; and the second measurement structure can be established by taking the condition that the drain of the reference field-effect transistor has a self-heating effect as the condition.
[0061] See Figure 5a As shown, a sufficiently large space can be provided in the drain region of the reference field-effect transistor to create a condition without self-heating effect, thereby establishing the first measurement structure. For example, combined with... Figure 5a As shown, the space around the drains of the two devices is large enough to allow the drains to dissipate heat completely, or the temperature is lower than the preset temperature during operation. In this case, the self-heating effect of the devices can be ignored.
[0062] As a control group structure, the second measurement structure needs to possess a self-heating effect, for example, by combining Figure 5b As shown, the space between the two drains is limited, so the device cannot dissipate heat completely during operation, and the drains have a self-heating effect.
[0063] In a specific application embodiment, in step S10, the first measurement structure can be established by taking the absence of self-heating effect at the source of the reference field-effect transistor as a condition; and the second measurement structure can be established by taking the presence of self-heating effect at the source of the reference field-effect transistor as a condition.
[0064] In practical applications, Figure 5a By reversing the power supply and ground terminals, it can serve as the first measurement structure with no self-heating effect at the source. Figure 5b The power supply terminal and ground terminal shown in the figure are reversed, which can be used as a second measurement structure with a self-heating effect of the source electrode.
[0065] In step S20, a first current-voltage curve and a second current-voltage curve are generated under the first measurement structure and the second measurement structure, respectively.
[0066] In this embodiment, under the same test endpoint, after the input current is applied based on the first measurement structure, the first current-voltage curve of the test endpoint of the test device is obtained, and the second current-voltage curve of the test endpoint of the test device is obtained after the same current is applied based on the second measurement structure.
[0067] In a specific application embodiment, in step S20, the first measurement structure and the second measurement structure can be driven at the same frequency, and the first current-voltage curve and the second current-voltage curve of the first measurement structure and the second measurement structure under the same frequency driving can be detected respectively.
[0068] Specifically, the first and second measurement structures are driven at the same driving frequency, and based on the same driving frequency, the first current-voltage curve of the first measurement structure and the second current-voltage curve of the second measurement structure are obtained.
[0069] In some embodiments, the first and second measurement structures can be driven at multiple driving frequencies, and the multiple driving frequencies can be set at equal arithmetic or proportional intervals.
[0070] In step S30, corresponding self-heating effect parameters are generated based on the first current-voltage curve and the second current-voltage curve.
[0071] In this embodiment, the effect of self-heating on the performance of the field-effect transistor can be confirmed by comparing the first current-voltage curve and the second current-voltage curve, and the corresponding self-heating effect parameters are generated based on this performance effect.
[0072] In one embodiment, in step S30, the self-heating effect parameter can be generated based on the comparison result by comparing the first current-voltage curve and the second current-voltage curve; the self-heating effect parameter characterizes the effect of the self-heating effect on the performance of the reference field-effect transistor.
[0073] In this embodiment, the first measurement structure is used as the reference test device, the first current-voltage curve is used as the reference current-voltage curve (IV curve), and the second current-voltage curve is used as the self-heating effect test IV curve. The self-heating effect test IV curve is compared with the reference IV curve to obtain the self-heating effect parameters as the model parameters of the self-heating effect to establish the self-heating effect model. The self-heating effect parameters characterize the effect of the self-heating effect on the performance of the reference field-effect transistor.
[0074] In step S40, the exponential formula parameters applied to the self-heating effect model are determined based on the self-heating effect parameters.
[0075] In this embodiment, the self-heating effect parameter can be used to evaluate the impact of the self-heating effect on the device performance. Therefore, the self-heating effect parameter characterizes the effect of the self-heating effect on the performance of the reference field-effect transistor. Then, based on the self-heating effect parameter, the exponential formula parameter applied to the self-heating effect model is determined. The self-heating effect model can be a preset relationship between electrical parameters and the self-heating effect parameter. For example, it can be based on an exponential relationship commonly used in the industry to evaluate the self-heating effect of devices. This exponential relationship is formed by the exponential formula parameter determined by the self-heating effect parameter.
[0076] In step S50, the exponential formula parameters are written into the simulation circuit simulator model card.
[0077] In this embodiment, the exponential formula parameters are written into the simulation circuit simulator model card, and the simulation circuit simulator model card forms a self-heating effect model of the field-effect transistor based on the exponential formula parameters.
[0078] Self-heating effect (SHE) is a significant phenomenon affecting device performance. For example, due to the limited heat dissipation space in small-sized FETs, the excess heat generated by the impedance in the current conduction path of the FET due to SHE cannot be dissipated in time, thus reducing operating speed and increasing device leakage current. This invention aims to collect electrical test curves (e.g., IV curves) of different devices to inversely deduce temperature model parameters, thereby establishing an SHE model in the model card of the Simulation Program Integrated Circuit Emphasis (SPICE) simulator.
[0079] In one embodiment, see Figure 6 As shown, the self-heating effect measurement method in this embodiment further includes steps S61 and S62.
[0080] In step S61, the current and voltage parameters of the field-effect transistor under test are obtained.
[0081] In step S62, the current and voltage parameters are written into the simulation circuit simulator model card to obtain the temperature model parameters of the field-effect transistor under test.
[0082] In this embodiment, the current and voltage parameters of the field-effect transistor under test are obtained by testing the current-voltage curve of the field-effect transistor under test. The current and voltage parameters are then written into the simulation circuit simulator model card to obtain the temperature model parameters of the field-effect transistor under test, thereby achieving the purpose of inferring the temperature model parameters from the current and voltage parameters.
[0083] This application also provides a simulation system based on a SPICE model, see [link to relevant documentation]. Figure 7 As shown, the simulation system includes: a model building module 610, a testing module 620, a testing comparison module 630, a calculation module 640, and a model import module 650.
[0084] The model building module 610 is used to build a first measurement structure and a second measurement structure based on a reference field-effect transistor.
[0085] By establishing a simulated device structure and testing its electrical curves (e.g., voltage-current curves), the influence of the self-heating effect on the device's electrical properties is confirmed through comparison of the two sets of electrical curves.
[0086] Specifically, a first measurement structure and a second measurement structure are set up based on the same reference field-effect transistor for comparison. In the two sets of measurement structures, the test endpoints of one set of measurement structures have a self-heating effect, while the test endpoints of the other set of measurement structures do not have a self-heating effect. Apart from the test endpoints, the other structures in the two sets of measurement structures are completely identical. The electrical curves of the test endpoints are obtained under the same test conditions (e.g., test voltage, test current, etc.). The impact of the self-heating effect on the device performance is deduced based on the difference in the electrical curves of the test endpoints.
[0087] The test module 620 is used to generate a first current-voltage curve and a second current-voltage curve under the first measurement structure and the second measurement structure, respectively.
[0088] In this embodiment, the test module 620 obtains the first current-voltage curve of the test endpoint of the test device after the input current is applied to the first measurement structure under the same test endpoint, and the second current-voltage curve of the test endpoint of the test device after the same current is applied to the second measurement structure.
[0089] Specifically, the test module 620 can drive the first measurement structure and the second measurement structure at the same driving frequency, and obtain the first current-voltage curve of the first measurement structure and the second current-voltage curve of the second measurement structure based on the same driving frequency.
[0090] In some embodiments, the first and second measurement structures can be driven at multiple driving frequencies, and the multiple driving frequencies can be set at equal arithmetic or proportional intervals.
[0091] The test comparison module 630 is used to generate corresponding self-heating effect parameters based on the first current-voltage curve and the second current-voltage curve.
[0092] In this embodiment, the effect of self-heating on the performance of the field-effect transistor can be confirmed by comparing the first current-voltage curve and the second current-voltage curve through the test comparison module 630, and the corresponding self-heating effect parameters are generated based on the performance effect.
[0093] In this embodiment, the test comparison module 630 uses the first measurement structure as the reference test device, the first current-voltage curve as the reference current-voltage curve (IV curve), and the second current-voltage curve as the self-heating effect test IV curve. The self-heating effect test IV curve is compared with the reference IV curve to obtain the self-heating effect parameters as model parameters of the self-heating effect to establish a self-heating effect model. The self-heating effect parameters characterize the effect of the self-heating effect on the performance of the reference field-effect transistor.
[0094] The calculation module 640 is used to determine the exponential formula parameters applied to the self-heating effect model based on the self-heating effect parameters.
[0095] In this embodiment, the self-heating effect parameter can be used to evaluate the impact of the self-heating effect on the device performance. Therefore, the self-heating effect parameter characterizes the effect of the self-heating effect on the performance of the reference field-effect transistor. Then, the calculation module 640 determines the exponential formula parameter applied to the self-heating effect model based on the self-heating effect parameter. The self-heating effect model can be a preset relationship between electrical parameters and the self-heating effect parameter. For example, it can be formed by the user based on the exponential relationship commonly used in the industry to evaluate the self-heating effect of devices. This exponential relationship is formed by the exponential formula parameter determined by the self-heating effect parameter.
[0096] The model import module 650 is used to write the parameters of the exponential formula into the simulation circuit simulator model card.
[0097] In this embodiment, the model import module 650 writes the exponential formula parameters into the simulation circuit simulator model card, and the simulation circuit simulator model card forms a self-heating effect model of the field-effect transistor based on the exponential formula parameters.
[0098] Self-heating effect (SHE) is a significant phenomenon affecting device performance. For example, due to the limited heat dissipation space in small-sized FETs, the excess heat generated by the impedance in the current conduction path of the FET due to SHE cannot be dissipated in time, thus reducing operating speed and increasing device leakage current. This invention aims to collect electrical test curves (e.g., IV curves) of different devices to inversely deduce temperature model parameters, thereby establishing an SHE model in the model card of the Simulation Program Integrated Circuit Emphasis (SPICE) simulator.
[0099] In one embodiment, see Figure 8 As shown, the simulation system also includes a temperature detection module 660.
[0100] The temperature detection module 660 is used to acquire the current and voltage parameters of the field-effect transistor under test, and write the current and voltage parameters into the simulation circuit simulator model card to obtain the temperature model parameters of the field-effect transistor under test.
[0101] In this embodiment, the current-voltage curve of the field-effect transistor under test is tested by the temperature detection module 660 to obtain the current-voltage parameters of the field-effect transistor under test. The current-voltage parameters are then written into the simulation circuit simulator model card to obtain the temperature model parameters of the field-effect transistor under test, thereby achieving the purpose of inferring the temperature model parameters from the current-voltage parameters.
[0102] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional units and modules is merely an example. In practical applications, the above functions can be assigned to different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiments can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit. Furthermore, the specific names of the functional units and modules are only for easy differentiation and are not intended to limit the scope of protection of this application. The specific working process of the units and modules in the above system can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.
[0103] In the above embodiments, the descriptions of each embodiment have different focuses. For parts that are not described in detail or recorded in a certain embodiment, please refer to the relevant descriptions of other embodiments.
[0104] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.
[0105] In the embodiments provided in this application, it should be understood that the disclosed apparatus / terminal devices and methods can be implemented in other ways. For example, the apparatus / terminal device embodiments described above are merely illustrative. For instance, the division of modules or units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between devices or units may be electrical, mechanical, or other forms.
[0106] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.
[0107] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.
[0108] If an integrated module / unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, all or part of the processes in the methods of the above embodiments can also be implemented by a computer program instructing related hardware. The computer program can be stored in a computer-readable storage medium, and when executed by a processor, it can implement the steps of the various method embodiments described above. The computer program includes computer program code, which can be in the form of source code, object code, executable files, or certain intermediate forms. The computer-readable medium can include: any entity or device capable of carrying computer program code, recording media, USB flash drives, portable hard drives, magnetic disks, optical disks, computer memory, read-only memory (ROM), random access memory (RAM), electrical carrier signals, telecommunication signals, and software distribution media, etc. It should be noted that the content included in the computer-readable medium can be appropriately added or removed according to the requirements of legislation and patent practice in the jurisdiction. For example, in some jurisdictions, according to legislation and patent practice, the computer-readable medium does not include electrical carrier signals and telecommunication signals.
[0109] The above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.
Claims
1. A method for measuring self-heating effect based on SPICE model, characterized in that, The self-heating effect measurement method includes: The first and second measurement structures are established based on a reference field-effect transistor; A first current-voltage curve and a second current-voltage curve are generated under the first measurement structure and the second measurement structure, respectively. Generate corresponding self-heating effect parameters based on the first current-voltage curve and the second current-voltage curve; The parameters of the exponential formula applied to the self-heating effect model are determined based on the self-heating effect parameters. Write the parameters of the exponential formula into the simulation circuit simulator model card; Obtain the current and voltage parameters of the field-effect transistor under test; Write the current and voltage parameters into the simulation circuit simulator model card to obtain the temperature model parameters of the field-effect transistor under test. The establishment of the first and second measurement structures based on the reference field-effect transistor includes: Select any one of the source, drain, and gate of the reference field-effect transistor as the test endpoint to establish a first measurement structure and a second measurement structure; wherein the test endpoint in the first measurement structure has no self-heating effect, and the test endpoint in the second measurement structure has a self-heating effect.
2. The self-heating effect measurement method as described in claim 1, characterized in that, The establishment of the first and second measurement structures based on the reference field-effect transistor further includes: An RC impedance structure is provided at the source, drain, and gate of the reference field-effect transistor.
3. The self-heating effect measurement method according to claim 1, wherein The establishment of the first and second measurement structures based on the reference field-effect transistor includes: The first measurement structure is established based on the condition that the gate of the reference field-effect transistor has no self-heating effect; The second measurement structure is established based on the condition that the gate of the reference field-effect transistor has a self-heating effect.
4. The self-heating effect measurement method according to claim 1, wherein The establishment of the first and second measurement structures based on the reference field-effect transistor includes: The first measurement structure is established based on the condition that the drain of the reference field-effect transistor has no self-heating effect. The second measurement structure is established based on the condition that the drain of the reference field-effect transistor has a self-heating effect.
5. The self-heating effect measurement method according to claim 1, wherein The establishment of the first and second measurement structures based on the reference field-effect transistor includes: The first measurement structure is established based on the condition that the source of the reference field-effect transistor has no self-heating effect; The second measurement structure is established based on the condition that the source of the reference field-effect transistor has a self-heating effect.
6. A self-heating effect measuring method according to any one of claims 1 to 5, characterized in that, Generating a first current-voltage curve and a second current-voltage curve under the first measurement structure and the second measurement structure, respectively, including: The first and second measurement structures are driven at the same frequency, and the first current-voltage curve and the second current-voltage curve of the first and second measurement structures under the same frequency driving are detected respectively.
7. The method for measuring the self-heating effect as described in claim 1, characterized in that, The generation of corresponding self-heating effect parameters based on the first current-voltage curve and the second current-voltage curve includes: The first current-voltage curve and the second current-voltage curve are compared, and a corresponding self-heating effect parameter is generated based on the comparison result; wherein, the self-heating effect parameter is used to determine the effect of the self-heating effect on the performance of the reference field-effect transistor.
8. An emulation system, comprising: The simulation system includes: The model building module is used to build a first measurement structure and a second measurement structure based on a reference field-effect transistor; wherein, any one of the source, drain and gate of the reference field-effect transistor is selected as the test endpoint to build the first measurement structure and the second measurement structure, the test endpoint in the first measurement structure has no self-heating effect, and the test endpoint in the second measurement structure has a self-heating effect. The test module is used to generate a first current-voltage curve and a second current-voltage curve under the first measurement structure and the second measurement structure, respectively. The test comparison module is used to generate corresponding self-heating effect parameters based on the first current-voltage curve and the second current-voltage curve. The calculation module is used to determine the exponential formula parameters applied to the self-heating effect model based on the self-heating effect parameters; The model import module is used to write the parameters of the exponential formula into the simulation circuit simulator model card; The temperature detection module is used to acquire the current and voltage parameters of the field-effect transistor under test, and write the current and voltage parameters into the simulation circuit simulator model card to obtain the temperature model parameters of the field-effect transistor under test.