Flip LEDs and Light Emitting Devices

Abstract

The present application discloses a flip-chip light-emitting diode and a light-emitting device. The flip-chip light-emitting diode includes a substrate and a semiconductor light-emitting unit located on the substrate. A semiconductor island structure is located on the substrate and has a gap between it and the semiconductor light-emitting unit. When the flip-chip light-emitting diode is powered on, the semiconductor island structure does not emit light. The present application provides a semiconductor island structure, which has a gap between it and the semiconductor light-emitting unit and is not used for conductive light emission by the flip-chip light-emitting diode. The region where the semiconductor island structure is located serves as the active area of ​​a ejector pin. When the ejector pin acts on this region, it can prevent the ejector pin from puncturing or breaking the protective layer of the semiconductor light-emitting unit, thereby preventing leakage failure of the flip-chip light-emitting diode and improving the reliability of the flip-chip light-emitting diode.

Description

Technical Field

[0001] This application relates to the field of semiconductor-related technologies, and in particular to a flip-chip light-emitting diode and a light-emitting device. Background Technology

[0002] Flip-chip LEDs are widely used in various fields, such as lighting and backlighting, due to their high luminous efficiency, energy saving, environmental friendliness, and long lifespan. When packaging existing flip-chip LEDs, a push pin is used to lift and bond the diode to a specific area on its front side. The push pin's application area is often the central region of the flip-chip's front side. The front side of a flip-chip LED includes an epitaxial structure, a transparent conductive layer, electrodes, and a protective layer and pads to protect these components. The protective layer is typically made of silicon oxide or a distributed Bragg reflector formed by a combination of silicon oxide and titanium oxide. Due to the brittleness of the protective layer, when the push pin is applied to the front side of the flip-chip LED, it can easily pierce or break through the protective layer, exposing the underlying epitaxial structure, transparent conductive layer, or electrodes. This can lead to leakage current failure and affect the reliability of the flip-chip LED. Summary of the Invention

[0003] The purpose of this application is to provide a flip-chip light-emitting diode (LED) with a semiconductor island structure spaced apart from the semiconductor light-emitting unit. The area where the semiconductor island structure is located serves as the working area of ​​the ejector pin, which can prevent the ejector pin from piercing or breaking through the protective layer of the semiconductor light-emitting unit and avoid leakage failure of the flip-chip LED, thereby improving the reliability of the flip-chip LED.

[0004] Another objective is to provide a light-emitting device comprising the aforementioned flip-chip light-emitting diode.

[0005] In a first aspect, this application provides a flip-chip light-emitting diode, comprising:

[0006] Substrate;

[0007] At least one semiconductor light-emitting unit is located on the substrate;

[0008] The semiconductor island structure is located on the substrate and has a gap between it and the semiconductor light-emitting unit; the semiconductor island structure does not emit light when the flip-chip light-emitting diode is energized.

[0009] In one possible implementation, the semiconductor island structure is located in the central region of the flip-chip light-emitting diode.

[0010] In one possible implementation, the width of the upper surface of the semiconductor island structure is at least 30 μm.

[0011] In one possible implementation, the upper surface of the semiconductor island structure is circular or polygonal in shape.

[0012] In one possible implementation, the height of the semiconductor island structure is less than or equal to the height of the semiconductor light-emitting unit.

[0013] In one possible implementation, the flip-chip light-emitting diode also includes a metal block located above the semiconductor island structure.

[0014] In one possible implementation, the metal block is in direct contact with the upper surface of the semiconductor island structure.

[0015] In one possible implementation, the thickness of the metal block is between 0.5 and 10 μm.

[0016] In one possible implementation, the flip-chip light-emitting diode further includes a protective layer that covers at least the upper surface and sidewalls of the semiconductor island structure.

[0017] In one possible implementation, the protective layer is located between the metal block and the semiconductor island structure, or the protective layer is located above the metal block.

[0018] In one possible implementation, the flip-chip LED further includes a first pad and a second pad;

[0019] The area covered by the protective layer also includes the upper surface and sidewalls of the semiconductor light-emitting unit; the semiconductor light-emitting unit includes a first semiconductor layer, an active layer, and a second semiconductor layer;

[0020] The first pad is located on the protective layer and is electrically connected to the first semiconductor layer in the semiconductor light-emitting unit through the protective layer. The second pad is located on the protective layer and is electrically connected to the second semiconductor layer in the semiconductor light-emitting unit through the protective layer.

[0021] In one possible implementation, neither the first pad nor the second pad is above the metal block.

[0022] In one possible implementation, the number of semiconductor light-emitting units is one.

[0023] In one possible implementation, the semiconductor light-emitting unit surrounds the periphery of the semiconductor island structure.

[0024] In one possible implementation, there are multiple semiconductor light-emitting units, and the multiple semiconductor light-emitting units are arranged at intervals; the number of semiconductor light-emitting units is either odd or even.

[0025] In one possible implementation, the semiconductor island structure is located between adjacent semiconductor light-emitting units.

[0026] In one possible implementation, the semiconductor island structure is located between adjacent semiconductor light-emitting units in the central region of the flip-chip light-emitting diode.

[0027] In one possible implementation, adjacent semiconductor light-emitting units are electrically connected.

[0028] In one possible implementation, the width of the gap between the semiconductor island structure and the semiconductor light-emitting unit increases from bottom to top.

[0029] Secondly, this application provides a light-emitting device, which includes the aforementioned flip-chip light-emitting diode.

[0030] Compared with the prior art, this application has at least the following beneficial effects:

[0031] A semiconductor island structure is formed in the central region of the flip-chip LED. There is a gap between the semiconductor island structure and the semiconductor light-emitting unit, and it is not used for the conduction and light emission of the flip-chip LED. The region where the semiconductor island structure is located serves as the working area of ​​the ejector pin. When the ejector pin acts on the above-mentioned region, the crack that the ejector pin pierces or breaks through the protective layer only extends to the upper surface or sidewall of the semiconductor island structure. To a certain extent, this can prevent the crack from directly transmitting to the protective layer at the semiconductor light-emitting unit, thereby avoiding leakage failure of the flip-chip LED due to the protective layer at the semiconductor light-emitting unit being pierced or broken, and improving the reliability of the flip-chip LED. Attached Figure Description

[0032] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0033] Figure 1 This is a top view of a flip-chip light-emitting diode according to an embodiment of this application;

[0034] Figure 2 An embodiment of this application is shown. Figure 1 Schematic diagram of AA section;

[0035] Figure 3 An embodiment of this application is shown. Figure 1 Schematic diagram of AA section;

[0036] Figure 4 An embodiment of this application is shown. Figure 1 Schematic diagram of AA section;

[0037] Figure 5 This is a top view of a flip-chip light-emitting diode according to an embodiment of this application;

[0038] Figure 6 An embodiment of this application is shown. Figure 5 Schematic diagram of AA section;

[0039] Figure 7 An embodiment of this application is shown. Figure 5 Schematic diagram of AA section;

[0040] Figure 8 An embodiment of this application is shown. Figure 5 Schematic diagram of AA section;

[0041] Figure 9 An embodiment of this application is shown. Figure 5 Schematic diagram of the BB cross section;

[0042] Figures 10-12 This is a schematic diagram of cross-section AA of a flip-chip light-emitting diode at different manufacturing stages, according to an embodiment of this application.

[0043] Illustration:

[0044] 100 Substrate; 200 Semiconductor stacked layer; 201 First semiconductor layer; 202 Active layer; 203 Second semiconductor layer; 210 Semiconductor light-emitting unit; 220 Semiconductor island structure; 230 Trench; 240 Isolation trench; 300 Current blocking layer; 400 Transparent conductive layer; 500 First electrode; 510 Second electrode; 520 Interconnect electrode; 600 Protective layer; 700 First pad; 710 Second pad; 800 Metal block. Detailed Implementation

[0045] The following specific embodiments illustrate the implementation of this application. Those skilled in the art can easily understand other advantages and effects of this application from the content disclosed in this specification. This application can also be implemented or operated through other different specific embodiments, and various details in this application can also be modified or changed based on different viewpoints and applications without departing from the spirit of this application.

[0046] In the description of this application, it should be noted that the terms "upper," "lower," "left," and "right," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this application is in use. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. In addition, the terms "first" and "second," etc., are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0047] According to one aspect of this application, a flip-chip light-emitting diode is provided. See also Figures 1-9 The flip-chip light-emitting diode includes a substrate 100, a semiconductor light-emitting unit 210 formed on the substrate 100, and a semiconductor island structure 220. A gap exists between the semiconductor island structure 220 and the semiconductor light-emitting unit 210. When the flip-chip light-emitting diode is energized, the semiconductor island structure 220 does not emit light. Preferably, the semiconductor island structure 220 is disposed in the central region of the flip-chip light-emitting diode, where the central region refers to the central region in its top view.

[0048] The protective layer 600 covers the upper surface and sidewalls of the semiconductor light-emitting unit 210, the upper surface and sidewalls of the semiconductor island structure 220, and the gap between the semiconductor island structure 220 and the semiconductor light-emitting unit 210.

[0049] The front side of the flip-chip LED faces the same direction as the upper surface of the substrate 100. This means that a semiconductor island structure 220 is disposed in the central region of the front side of the flip-chip LED, and this semiconductor island structure 220 is independently disposed from the semiconductor light-emitting unit 210. The area where the semiconductor island structure 220 is located serves as the working area of ​​the ejector pin. When the ejector pin acts on this area, the crack pierced or broken through the protective layer 600 by the ejector pin is generated on the upper surface of the semiconductor island structure 220 or extends further to the sidewalls of the semiconductor island structure 220. The gap between the semiconductor light-emitting unit 210 and the semiconductor island structure 220 can, to some extent, prevent the crack from propagating to the protective layer 600 at the semiconductor light-emitting unit 210, thereby avoiding leakage failure of the flip-chip LED due to the piercing or breaking of the protective layer 600 at the semiconductor light-emitting unit 210, and improving the reliability of the flip-chip LED. Furthermore, when the flip-chip LED is energized, the semiconductor island structure 220 does not conduct electricity or emit light.

[0050] The following explanation uses a flip-chip LED as an example:

[0051] Example 1

[0052] This application provides a flip-chip light-emitting diode. Figure 1This is a top view of the flip-chip LED. Figures 2-4 for Figure 1 A schematic diagram of the AA section.

[0053] The flip-chip light-emitting diode (LED) includes a substrate 100, a semiconductor light-emitting unit 210 formed on the substrate 100, and a semiconductor island structure 220. The semiconductor island structure 220 is disposed in the central region of the flip-chip LED, and the semiconductor light-emitting unit 210 is ring-shaped and surrounds the periphery of the semiconductor island structure 220. The semiconductor island structure 220 and the semiconductor light-emitting unit 210 are independently located on the substrate 100, and there is a gap between them; no semiconductor layer or conductive layer connects them. When the flip-chip LED is energized, the semiconductor island structure 220 does not emit light. Here, the central region of the flip-chip LED refers to the central region in its top view.

[0054] The protective layer 600 covers the upper surface and sidewalls of the semiconductor light-emitting unit 210, the upper surface and sidewalls of the semiconductor island structure 220, and the gap between the semiconductor island structure 220 and the semiconductor light-emitting unit 210.

[0055] The first pad 700 and the second pad 710 are both located on the protective layer 600 and are electrically connected to the semiconductor light-emitting unit 210 through the protective layer 600.

[0056] When a flip-chip LED is mounted onto an application substrate, the first pad 700 and the second pad 710 can be connected to the electrodes on the application substrate via reflow soldering or hot pressing processes. A tin-containing connection layer, such as solder paste, can exist between the first pad 700, the second pad 710, and the electrodes on the application substrate. The presence of a tin-containing connection layer on either the first pad 700 or the second pad 710 avoids the need for solder paste.

[0057] The first pad 700 and the second pad 710 may include an adhesive layer, a reflective layer, a barrier layer, and a gold layer. The adhesive layer is a titanium or chromium layer; the reflective layer is an aluminum layer; and the barrier layer is a nickel layer, or a repeated stack of nickel and platinum layers. The barrier layer is used to prevent the tin-containing interconnect layer from penetrating into the interior of the flip-chip LED. Preferably, the first pad 700 and the second pad 710 further include a thick tin layer located on the gold layer.

[0058] from Figure 1 As shown in the top view of the flip-chip LED, the semiconductor island structure 220 is located between the first pad 700 and the second pad 710. From... Figure 2 As shown in the AA cross-sectional schematic diagram of the flip-chip light-emitting diode, neither the first pad 700 nor the second pad 710 is located above the semiconductor island structure 220.

[0059] When the transfer device's ejector pin acts on a flip-chip LED supported by a flexible material such as a blue film to transfer it to another device or substrate, such as an application substrate, the ejector pin acts on the surface above the semiconductor island structure 220 between the first pad 700 and the second pad 710, that is, on the surface of the protective layer 600. The area where the semiconductor island structure 220 is located serves as the area of ​​action of the ejector pin. When the ejector pin acts on this area, the crack pierced or broken through the protective layer 600 by the ejector pin is generated on the upper surface of the semiconductor island structure 220 or extends further to its sidewalls. The gap between the semiconductor light-emitting unit 210 and the semiconductor island structure 220 can, to some extent, prevent the crack from propagating to the protective layer 600 at the semiconductor light-emitting unit 210, thereby avoiding leakage failure of the flip-chip LED due to the protective layer 600 at the semiconductor light-emitting unit 210 being pierced or broken, and improving the reliability of the flip-chip LED. Furthermore, when the flip-chip LED is energized, the semiconductor island structure 220 does not conduct electricity or emit light.

[0060] Preferably, the width of the gap between the semiconductor island structure 220 and the semiconductor light-emitting unit 210 is... W 1 The gap increases from bottom to top. The width of the gap at the bottom... W 1 Greater than or equal to 3μm.

[0061] In one embodiment, the material composition and thickness of the stacked material layers of the semiconductor island structure 220 are consistent with those of the semiconductor light-emitting unit 210. The thickness of the semiconductor light-emitting unit 210 is 3~10μm.

[0062] See Figures 2-4 The semiconductor light-emitting unit 210 includes a first semiconductor stacked layer, and the semiconductor island structure 220 includes a second semiconductor stacked layer. The height of the semiconductor island structure 220 is less than or equal to the height of the semiconductor light-emitting unit 210, and preferably less than or equal to the height of the first semiconductor stacked layer. Both the first and second semiconductor stacked layers include a first semiconductor layer 201, an active layer 202, and a second semiconductor layer 203. The first semiconductor layer 201 is an N-type semiconductor layer, the active layer 202 is a multilayer quantum well layer that can provide blue, green, or red light radiation, as well as ultraviolet or infrared radiation, and the second semiconductor layer 203 is a P-type semiconductor layer. The N-type semiconductor layer, the multilayer quantum well layer, and the P-type semiconductor layer are only the basic building blocks of the first semiconductor stacked layer. Based on this, the first semiconductor stacked layer may also include other functional structural layers that optimize the performance of the flip-chip light-emitting diode.

[0063] To obtain the semiconductor light-emitting unit 210 and the semiconductor island structure 220, a semiconductor stacked layer 200 can be first obtained on the substrate 100. Then, the semiconductor stacked layer 200 is etched from the surface of the semiconductor stacked layer 200 to the surface of the substrate 100 using a vertical etching process to form the independent semiconductor light-emitting unit 210 and the semiconductor island structure 220. Preferably, further etching a portion of the semiconductor material layer on the semiconductor island structure 220 can make the height of the semiconductor island structure 220 smaller than the height of the semiconductor light-emitting unit 210.

[0064] The upper surface of the semiconductor island structure 220 has a shape including, but not limited to, a circle or a polygon, and the width of the upper surface of the semiconductor island structure 220 is at least 30 μm. Preferably, the width of the upper surface of the semiconductor island structure 220 is implemented according to the current ejector pin size, and the width of the upper surface of the semiconductor island structure 220 is at least 50 μm. In this embodiment, both the upper and lower surfaces of the semiconductor island structure 220 are circular, and the diameter of the upper surface of the semiconductor island structure 220 is smaller than the diameter of the lower surface of the semiconductor island structure 220.

[0065] In one embodiment, the flip-chip light-emitting diode may further include a metal block 800, which is located above the semiconductor island structure 220. The metal block 800 has a certain degree of ductility, which can buffer the force of the ejector pin to a certain extent. The thickness of the metal block 800 is between 0.5 and 10 μm, and the thickness of the metal block 800 is preferably 1 to 3 μm. In this embodiment, the material used to prepare the metal block 800 includes, but is not limited to, any combination of Au, Ti, Al, Cr, Pt, TiW alloy, or Ni.

[0066] See Figure 3 The metal block 800 is in direct contact with the upper surface of the semiconductor island structure 220, and the protective layer 600 is located above the metal block 800. Specifically, the metal block 800 covers the upper surface of the semiconductor island structure 220, or the metal block 800 covers the upper surface and at least part of the sidewalls of the semiconductor island structure 220.

[0067] Or see Figure 4 The metal block 800 is located on the upper surface of the protective layer 600 and above the semiconductor island structure 220, meaning the protective layer 600 is located between the metal block 800 and the semiconductor island structure 220. Preferably, the material and thickness of the metal block 800 are the same as those of the first pad 700 and the second pad 710. The metal block 800 is located between the first pad 700 and the second pad 710, maintaining a certain distance from them. The width of the metal block 800 is less than or equal to the width of the semiconductor island structure 220.

[0068] It should be noted that the design of the semiconductor island structure 220 can prevent the protective layer 600 at the semiconductor light-emitting unit 210 from cracking to a certain extent, and the metal block 800 is not necessary.

[0069] In one embodiment, the substrate 100 is a transparent substrate, such as a sapphire substrate. The upper surface of the substrate 100 may have a sapphire pattern, or the upper surface of the substrate 100 may have a pattern of a heterogeneous material, such as silicon oxide. The height of the pattern may be 1-3 μm, and the width may be 1-4 μm. The substrate 100 also includes an upper surface, a lower surface, and side surfaces, and light radiated by the active layer 202 can be emitted from the side surfaces and the upper surface of the substrate 100. The thickness of the substrate 100 is preferably 60 μm or more, for example, 80 μm, 120 μm, 150 μm, or 250 μm.

[0070] In one implementation, see Figures 1-4 The first semiconductor stack has a mesa that exposes a portion of the first semiconductor layer 201, and the first electrode 500 is formed on the mesa.

[0071] The semiconductor light-emitting unit 210 further includes a transparent conductive layer 400 located on the second semiconductor layer 203, which includes, but is not limited to, an indium tin oxide layer. The transparent conductive layer 400 includes an opening that exposes a portion of the second semiconductor layer 203. A second electrode 510 is formed on the transparent conductive layer 400 and contacts the second semiconductor layer 203 through the opening.

[0072] The second electrode 510 includes a block portion and at least one strip portion extending from the block portion. The second electrode 510 includes a portion of the block portion or a portion of the strip portion that contacts the second semiconductor layer 203 through an opening in the transparent conductive layer 400 to improve the adhesion of the second electrode 510.

[0073] The width of the opening below the strip-shaped portion in the second electrode 510 is greater than the width of the strip-shaped portion in the second electrode 510. The width of the opening below the block-shaped portion in the second electrode 510 is less than the width of the block-shaped portion in the second electrode 510, so that the edge of the block-shaped portion is located on the upper surface of the transparent conductive layer 400.

[0074] The first electrode 500 and the second electrode 510 may include an adhesive layer, a reflective layer and a blocking layer, wherein the adhesive layer is a chromium layer or a titanium layer, the reflective layer is an aluminum layer, and the blocking layer is a repeating stack of titanium and platinum layers.

[0075] The protective layer 600 has through holes located above the first electrode 500 and the second electrode 510, respectively. The first pad 700 and the second pad 710 are located on the protective layer 600 and are connected to the first electrode 500 and the second electrode 510 through the aforementioned through holes, respectively. Neither the first pad 700 nor the second pad 710 is located above the metal block 800.

[0076] The protective layer 600 includes, but is not limited to, a distributed Bragg reflector or a single-layer insulating layer. In this embodiment, the material of the protective layer 600 is at least two of different materials such as SiO2, TiO2, ZnO2, ZrO2, and Cu2O3. Specifically, it is a distributed Bragg reflector made by using techniques such as electron beam evaporation or ion beam sputtering to alternately stack the two materials into multiple layers.

[0077] Example 2

[0078] This application provides a flip-chip light-emitting diode, specifically a high-voltage flip-chip light-emitting diode. Figure 5 This is a top view of the flip-chip LED. Figures 6-8 for Figure 5 Schematic diagram of section AA, Figure 9 for Figure 5 A schematic diagram of the BB cross section.

[0079] The flip-chip light-emitting diode includes a substrate 100, a plurality of semiconductor light-emitting units 210 formed on the substrate 100, and a semiconductor island structure 220. The plurality of semiconductor light-emitting units 210 are arranged in a predetermined direction and spaced apart, with adjacent semiconductor light-emitting units 210 electrically connected. The semiconductor island structure 220 is located between adjacent semiconductor light-emitting units 210 in the central region of the flip-chip light-emitting diode, and has a gap between it and its adjacent semiconductor light-emitting units 210. Here, the central region of the flip-chip light-emitting diode refers to the central region in its top view. The number of semiconductor light-emitting units 210 can be odd or even, preferably even.

[0080] The protective layer 600 covers the upper surface and sidewalls of each semiconductor light-emitting unit 210, the upper surface and sidewalls of the semiconductor island structure 220, and the gap between the semiconductor island structure 220 and the semiconductor light-emitting unit 210.

[0081] The first pad 700 is located on the protective layer 600 and passes through the protective layer 600 to be electrically connected to the semiconductor light-emitting unit 210 at the beginning. The second pad 710 is located on the protective layer 600 and passes through the protective layer 600 to be electrically connected to the semiconductor light-emitting unit 210 at the end.

[0082] Preferably, the width of the gap between the semiconductor island structure 220 and the adjacent semiconductor light-emitting unit 210 is... W1 The gap increases from bottom to top. The width of the gap at the bottom... W 1 Greater than or equal to 3μm.

[0083] In one embodiment, the material composition and thickness of the stacked material layers of the semiconductor island structure 220 are consistent with those of the semiconductor light-emitting unit 210. The thickness of the semiconductor light-emitting unit 210 is 3~10μm.

[0084] See Figures 6-8 Each semiconductor light-emitting unit 210 includes a first semiconductor stacked layer, and the semiconductor island structure 220 includes a second semiconductor stacked layer. The height of the semiconductor island structure 220 is less than or equal to the height of the semiconductor light-emitting unit 210, and preferably less than or equal to the height of the first semiconductor stacked layer. Both the first and second semiconductor stacked layers include a first semiconductor layer 201, an active layer 202, and a second semiconductor layer 203; the first semiconductor layer 201 is an N-type semiconductor layer, the active layer 202 is a multilayer quantum well layer that can provide blue, green, or red light radiation, as well as ultraviolet or infrared radiation, and the second semiconductor layer 203 is a P-type semiconductor layer. The N-type semiconductor layer, the multilayer quantum well layer, and the P-type semiconductor layer are only the basic building blocks of the first semiconductor stacked layer. Based on this, the first semiconductor stacked layer may also include other functional structural layers that optimize the performance of the flip-chip light-emitting diode.

[0085] To obtain multiple semiconductor light-emitting units 210 and semiconductor island structures 220, a semiconductor stacked layer 200 can be first obtained on the substrate 100. Then, a vertical etching process is used to etch the semiconductor stacked layer 200 from the surface of the semiconductor stacked layer 200 to the surface of the substrate 100 to form multiple semiconductor light-emitting units 210 and semiconductor island structures 220. Preferably, further etching a portion of the semiconductor material layer on the semiconductor island structure 220 can make the height of the semiconductor island structure 220 smaller than the height of the semiconductor light-emitting units 210.

[0086] The upper surface of the semiconductor island structure 220 has a shape including, but not limited to, a circle or a polygon, and the width of the upper surface of the semiconductor island structure 220 is at least 30 μm. Preferably, the width of the upper surface of the semiconductor island structure 220 is implemented according to the current ejector pin size, and the width of the upper surface of the semiconductor island structure 220 is at least 50 μm. In this embodiment, both the upper and lower surfaces of the semiconductor island structure 220 are circular, and the diameter of the upper surface of the semiconductor island structure 220 is smaller than the diameter of the lower surface of the semiconductor island structure 220.

[0087] In one embodiment, the flip-chip light-emitting diode may further include a metal block 800, which is located above the semiconductor island structure 220. The metal block 800 has a certain degree of ductility, which can buffer the force of the ejector pin to a certain extent. The thickness of the metal block 800 is between 0.5 and 10 μm, and the thickness of the metal block 800 is preferably 1 to 3 μm. In this embodiment, the material used to prepare the metal block 800 includes, but is not limited to, any combination of Au, Ti, Al, Cr, Pt, TiW alloy, or Ni.

[0088] See Figure 7 The metal block 800 is in direct contact with the upper surface of the semiconductor island structure 220, and the protective layer 600 is located above the metal block 800. Specifically, the metal block 800 covers the upper surface of the semiconductor island structure 220, or the metal block 800 covers the upper surface and at least part of the sidewalls of the semiconductor island structure 220.

[0089] Or see Figure 8 The metal block 800 is located on the upper surface of the protective layer 600 and above the semiconductor island structure 220, meaning the protective layer 600 is located between the metal block 800 and the semiconductor island structure 220. Preferably, the material and thickness of the metal block 800 are the same as those of the first pad 700 and the second pad 710. The metal block 800 is located between the first pad 700 and the second pad 710, maintaining a certain distance from them. The width of the metal block 800 is less than or equal to the width of the semiconductor island structure 220.

[0090] It should be noted that the design of the semiconductor island structure 220 can prevent the protective layer 600 at the semiconductor light-emitting unit 210 from cracking to a certain extent, and the metal block 800 is not necessary.

[0091] In one implementation, see Figure 9 The flip-chip light-emitting diode also includes a current blocking layer 300. In each pair of adjacent semiconductor light-emitting units 210, the current blocking layer 300 extends from the second semiconductor layer 203 in the left semiconductor light-emitting unit 210 to the first semiconductor layer 201 in the right semiconductor light-emitting unit 210. The material of the current blocking layer 300 may be one or more of silicon oxide, silicon nitride, silicon carbide, or silicon oxynitride.

[0092] The first semiconductor light-emitting unit 210 at the first end is provided with a first electrode 500, which is electrically connected to the first semiconductor layer 201 in the semiconductor light-emitting unit 210.

[0093] The semiconductor light-emitting unit 210 at the tail end is provided with a second electrode 510. In the semiconductor light-emitting unit 210 at the tail end, a transparent conductive layer 400 is formed on the second semiconductor layer 203. The transparent conductive layer 400 includes, but is not limited to, an indium tin oxide layer. The transparent conductive layer 400 includes an opening, and the opening exposes a portion of the second semiconductor layer 203. The second electrode 510 passes through the opening and contacts the second semiconductor layer 203.

[0094] The second electrode 510 includes a block portion and at least one strip portion extending from the block portion. The second electrode 510 includes a portion of the block portion or a portion of the strip portion that contacts the second semiconductor layer 203 through an opening in the transparent conductive layer 400 to improve the adhesion of the second electrode 510.

[0095] The width of the opening below the strip-shaped portion in the second electrode 510 is greater than the width of the strip-shaped portion in the second electrode 510. The width of the opening below the block-shaped portion in the second electrode 510 is less than the width of the block-shaped portion in the second electrode 510, so that the edge of the block-shaped portion is located on the upper surface of the transparent conductive layer 400.

[0096] Two adjacent semiconductor light-emitting units 210 are electrically connected by interconnecting electrodes 520. Specifically, in each pair of adjacent semiconductor light-emitting units 210, the left semiconductor light-emitting unit 210 includes the aforementioned transparent conductive layer 400, which is located on the current blocking layer 300 above the second semiconductor layer 203. The interconnecting electrode 520 extends from the transparent conductive layer 400 in the left semiconductor light-emitting unit 210 to the first semiconductor layer 201 in the right semiconductor light-emitting unit 210.

[0097] The first electrode 500, the second electrode 510, and the interconnect electrode 520 may include an adhesive layer, a reflective layer, and a barrier layer, wherein the adhesive layer is a chromium layer or a titanium layer, the reflective layer is an aluminum layer, and the barrier layer is a repeating stack of titanium and platinum layers.

[0098] The protective layer 600 is provided with through holes located above the first electrode 500 and the second electrode 510, respectively. The first pad 700 and the second pad 710 are located on the protective layer 600 and are connected to the first electrode 500 and the second electrode 510 through the aforementioned through holes, respectively.

[0099] The protective layer 600 includes, but is not limited to, a distributed Bragg reflector or a single-layer insulating layer. In this embodiment, the material of the protective layer 600 is at least two of different materials such as SiO2, TiO2, ZnO2, ZrO2, and Cu2O3. Specifically, it is a distributed Bragg reflector made by using techniques such as electron beam evaporation or ion beam sputtering to alternately stack the two materials into multiple layers.

[0100] Example 3

[0101] This application provides a method for fabricating a flip-chip light-emitting diode, specifically providing a method for fabricating a flip-chip light-emitting diode. Figure 1 The method for fabricating a flip-chip light-emitting diode (LED) is shown. This method includes the following steps:

[0102] S1, see also Figure 10 A substrate 100 is provided, and a semiconductor stack layer 200 is formed on the substrate 100.

[0103] The semiconductor stacked layer 200 includes a first semiconductor layer 201, an active layer 202, and a second semiconductor layer 203; the first semiconductor layer 201 is an N-type semiconductor layer, the active layer 202 is a multilayer quantum well layer, and the second semiconductor layer 203 is a P-type semiconductor layer. In this embodiment, the substrate 100 is a patterned sapphire substrate or a flat sapphire substrate.

[0104] S2, see also Figure 11 The semiconductor stack 200 is etched to form a trench 230 that penetrates the semiconductor stack 200. The trench 230 is annular and divides the semiconductor stack 200 into independent semiconductor light-emitting units 210 and semiconductor island structures 220. The semiconductor light-emitting units 210 surround the periphery of the semiconductor island structures 220.

[0105] The width of trench 230 is the width of the gap between semiconductor island structure 220 and semiconductor light-emitting unit 210. W 1 , W 1 Increasing from bottom to top.

[0106] The upper surface of the semiconductor island structure 220 is circular or polygonal, and its width is at least 30 μm. Preferably, the width of the upper surface of the semiconductor island structure 220 is implemented according to the current ejector pin size, and its width is at least 50 μm. In this embodiment, both the upper and lower surfaces of the semiconductor island structure 220 are circular, and the diameter of the upper surface of the semiconductor island structure 220 is smaller than the diameter of the lower surface of the semiconductor island structure 220.

[0107] S3, see also Figure 12 A protective layer 600 is formed at the semiconductor light-emitting unit 210, the semiconductor island structure 220 and the trench 230. The protective layer 600 includes, but is not limited to, a distributed Bragg reflector or a single insulating layer.

[0108] Specifically, the semiconductor light-emitting unit 210 includes a first semiconductor stacked layer, on which a transparent conductive layer 400 is formed. The transparent conductive layer 400 includes an opening that exposes a portion of the second semiconductor layer 203. The material of the transparent conductive layer 400 is generally a conductive material with transparent properties, and can be specifically selected as indium tin oxide.

[0109] The first semiconductor stack has a mesa that exposes a portion of the first semiconductor layer 201, on which a first electrode 500 is formed; a second electrode 510 is formed on the transparent conductive layer 400, and the second electrode 510 contacts the second semiconductor layer 203 through an opening.

[0110] The second electrode 510 includes a block portion and at least one strip portion extending from the block portion. The second electrode 510 includes a portion of the block portion or a portion of the strip portion that contacts the second semiconductor layer 203 through an opening in the transparent conductive layer 400 to improve the adhesion of the second electrode 510.

[0111] The width of the opening below the strip-shaped portion in the second electrode 510 is greater than the width of the strip-shaped portion in the second electrode 510. The width of the opening below the block-shaped portion in the second electrode 510 is less than the width of the block-shaped portion in the second electrode 510, so that the edge of the block-shaped portion is located on the upper surface of the transparent conductive layer 400.

[0112] The protective layer 600 is etched and through holes are formed above the first electrode 500 and the second electrode 510, respectively. The through holes are used to form a first pad 700 corresponding to the first electrode 500 and a second pad 710 corresponding to the second electrode 510.

[0113] S4. Form a first pad 700 and a second pad 710 electrically connected to the semiconductor light-emitting unit 210. This step yields... Figure 2 The flip-chip LED shown.

[0114] In one embodiment, the method further includes: simultaneously forming the first electrode 500 and the second electrode 510, forming a metal block 800 on the semiconductor island structure 220; the metal block 800 covers the upper surface of the semiconductor island structure 220, or the metal block 800 covers the upper surface and at least part of the sidewalls of the semiconductor island structure 220. The thickness of the metal block 800 is between 0.5 and 10 μm, preferably 1 to 3 μm. In this embodiment, the material used to prepare the metal block 800 can be the same as that used for the first electrode 500 and the second electrode 510. This step can obtain... Figure 3 The flip-chip LED shown.

[0115] In one embodiment, the method further includes forming a metal block 800 on the upper surface of the protective layer 600 above the semiconductor island structure 220, while simultaneously forming the first pad 700 and the second pad 710. The thickness of the metal block 800 is between 0.5 and 10 μm, preferably 1 to 3 μm. In this embodiment, the material used to prepare the metal block 800 can be the same as that used for the first pad 700 and the second pad 710. This step can obtain... Figure 4 The flip-chip LED shown.

[0116] Example 4

[0117] This application provides a method for fabricating a flip diode, specifically providing a method for fabricating a flip diode. Figure 5 The method for fabricating a flip-chip light-emitting diode (LED) is shown. This method includes the following steps:

[0118] S10. A substrate 100 is provided, and a plurality of semiconductor light-emitting units 210 arranged in a predetermined direction and spaced apart are formed on the substrate 100. Adjacent semiconductor light-emitting units 210 are electrically connected. A semiconductor island structure 220 is formed between adjacent semiconductor light-emitting units 210 in the central region of the flip-chip light-emitting diode, and a gap exists between the semiconductor island structure 220 and its adjacent semiconductor light-emitting unit 210. The number of semiconductor light-emitting units 210 is either odd or even, and the number of semiconductor light-emitting units 210 is preferably even. The semiconductor island structure 220 is located in the central region of the flip-chip light-emitting diode so as to make the light-emitting area of ​​each semiconductor light-emitting unit 210 as close as possible.

[0119] Specifically, a semiconductor stack layer 200 is formed on the substrate 100. The semiconductor stack layer 200 includes a first semiconductor layer 201, an active layer 202, and a second semiconductor layer 203. The first semiconductor layer 201 is an N-type semiconductor layer, the active layer 202 is a multilayer quantum well layer, and the second semiconductor layer 203 is a P-type semiconductor layer. The semiconductor stack layer 200 is etched to form a plurality of first semiconductor stack layers for forming semiconductor light-emitting units 210. Adjacent first semiconductor stack layers are separated by isolation trenches 240, and semiconductor island structures 220 are formed within the isolation trenches 240 in the central region of the substrate 100.

[0120] The width of the gap between the semiconductor island structure 220 and the adjacent semiconductor light-emitting unit 210 W 1The shape increases from bottom to top. The upper surface of the semiconductor island structure 220 is circular or polygonal, and the width of the upper surface of the semiconductor island structure 220 is at least 30 μm. Preferably, the width of the upper surface of the semiconductor island structure 220 is implemented according to the current ejector pin size, and the width of the upper surface of the semiconductor island structure 220 is at least 50 μm. In this embodiment, both the upper and lower surfaces of the semiconductor island structure 220 are circular, and the diameter of the upper surface of the semiconductor island structure 220 is smaller than the diameter of the lower surface of the semiconductor island structure 220.

[0121] In each pair of adjacent semiconductor light-emitting units 210, a current blocking layer 300 extends from the second semiconductor layer 203 on the left to the first semiconductor layer 201 on the right via an isolation trench 240. The material of the current blocking layer 300 may be one or more of silicon oxide, silicon nitride, silicon carbide, or silicon oxynitride.

[0122] In the semiconductor light-emitting unit 210 at the tail end, a transparent conductive layer 400 is formed on the second semiconductor layer 203. The material of the conductive layer 400 is generally a conductive material with transparent properties, and can be specifically selected as indium tin oxide. In each pair of adjacent semiconductor light-emitting units 210, the left semiconductor light-emitting unit 210 also includes the above-mentioned transparent conductive layer 400, which is located on the current blocking layer 300 above the second semiconductor layer 203.

[0123] A first electrode 500 is formed on the first semiconductor layer 201 in the first semiconductor light-emitting unit 210 at the first end.

[0124] A second electrode 510 is formed on the transparent conductive layer 400 in the semiconductor light-emitting unit 210 at the tail end, and the second electrode 510 passes through the opening and contacts the second semiconductor layer 203.

[0125] The second electrode 510 includes a block portion and at least one strip portion extending from the block portion. The second electrode 510 includes a portion of the block portion or a portion of the strip portion that contacts the second semiconductor layer 203 through an opening in the transparent conductive layer 400 to improve the adhesion of the second electrode 510.

[0126] The width of the opening below the strip-shaped portion in the second electrode 510 is greater than the width of the strip-shaped portion in the second electrode 510. The width of the opening below the block-shaped portion in the second electrode 510 is less than the width of the block-shaped portion in the second electrode 510, so that the edge of the block-shaped portion is located on the upper surface of the transparent conductive layer 400.

[0127] Interconnect electrodes 520 are formed for connecting adjacent semiconductor light-emitting units 210. In each pair of adjacent semiconductor light-emitting units 210, the interconnect electrodes 520 extend from the transparent conductive layer 400 in the left semiconductor light-emitting unit 210 to the first semiconductor layer 201 in the right semiconductor light-emitting unit 210.

[0128] S20. A protective layer 600 is formed at multiple semiconductor light-emitting units 210, semiconductor island structure 220 and isolation trench 240. The protective layer 600 includes, but is not limited to, a distributed Bragg reflector or a single insulating layer.

[0129] The protective layer 600 is etched and through holes are formed above the first electrode 500 and the second electrode 510, respectively. The through holes are used to form a first pad 700 corresponding to the first electrode 500 and a second pad 710 corresponding to the second electrode 510.

[0130] S30: A first pad 700 electrically connected to the first-end semiconductor light-emitting unit 210 and a second pad 710 electrically connected to the last-end semiconductor light-emitting unit 210 are formed. This step yields... Figure 6 The flip-chip LED shown.

[0131] In one embodiment, the method further includes: simultaneously forming a first electrode 500, a second electrode 510, and an interconnect electrode 520, forming a metal block 800 on the semiconductor island structure 220; the metal block 800 covers the upper surface of the semiconductor island structure 220, or the metal block 800 covers the upper surface and at least part of the sidewalls of the semiconductor island structure 220. The thickness of the metal block 800 is between 0.5 and 10 μm, preferably 1 to 3 μm. In this embodiment, the material used to prepare the metal block 800 can be the same as that used for the first electrode 500, the second electrode 510, or the interconnect electrode 520. This step can obtain... Figure 7 The flip-chip LED shown.

[0132] In one embodiment, the method further includes forming a metal block 800 on the upper surface of the protective layer 600 above the semiconductor island structure 220, while simultaneously forming the first pad 700 and the second pad 710. The thickness of the metal block 800 is between 0.5 and 10 μm, preferably 1 to 3 μm. In this embodiment, the material used to prepare the metal block 800 can be the same as that used for the first pad 700 and the second pad 710. This step can obtain... Figure 4 The flip-chip LED shown.

[0133] According to one aspect of this application, a light-emitting device is provided. This light-emitting device can be a lighting device, a backlight device, or a display device, such as a lamp, television, mobile phone, panel, or an RGB display screen. The light-emitting device includes flip-chip light-emitting diodes as described in the above embodiments. These flip-chip light-emitting diodes are integrated and mounted on an application substrate or packaging substrate in quantities of hundreds, thousands, or tens of thousands to form a light-emitting light source portion.

[0134] As can be seen from the above technical solution, this application forms a semiconductor island structure 220 in the central region of the flip-chip light-emitting diode. There is a gap between the semiconductor island structure 220 and the semiconductor light-emitting unit 210, and it is not used for the conductive light-emitting process of the flip-chip light-emitting diode. The region where the semiconductor island structure 220 is located serves as the working region of the ejector pin. When the ejector pin acts on the above region, the crack that the ejector pin pierces or breaks through the protective layer 600 only extends to the upper surface or sidewall of the semiconductor island structure 220. To a certain extent, this can prevent the crack from being directly transmitted to the protective layer 600 at the semiconductor light-emitting unit 210, thereby avoiding leakage failure of the flip-chip light-emitting diode due to the protective layer 600 at the semiconductor light-emitting unit 210 being pierced or broken, and improving the reliability of the flip-chip light-emitting diode.

[0135] The above description is only a preferred embodiment of this application. It should be noted that for those skilled in the art, several improvements and substitutions can be made without departing from the technical principles of this application, and these improvements and substitutions should also be considered within the scope of protection of this application.

Claims

1. A flip-chip light-emitting diode, characterized in that, include: Substrate; At least one semiconductor light-emitting unit is located on the substrate; A semiconductor island structure, having an upper surface and sidewalls, is located independently of the semiconductor light-emitting unit on the substrate. When the flip-chip light-emitting diode is energized, the semiconductor island structure does not emit light, and the semiconductor island structure is located in the central region of the flip-chip light-emitting diode. A protective layer that at least covers the upper surface and sidewalls of the semiconductor island structure.

2. The flip-chip light-emitting diode according to claim 1, characterized in that, The width of the upper surface of the semiconductor island structure is at least 30 μm.

3. The flip-chip light-emitting diode according to claim 1, characterized in that, The upper surface of the semiconductor island structure is circular or polygonal in shape.

4. The flip-chip light-emitting diode according to claim 1, characterized in that, The height of the semiconductor island structure is less than or equal to the height of the semiconductor light-emitting unit.

5. The flip-chip light-emitting diode according to claim 1, characterized in that, It also includes a metal block located above the semiconductor island structure.

6. The flip-chip light-emitting diode according to claim 5, characterized in that, The metal block is in direct contact with the upper surface of the semiconductor island structure.

7. The flip-chip light-emitting diode according to claim 5, characterized in that, The thickness of the metal block is between 0.5 and 10 μm.

8. The flip-chip light-emitting diode according to claim 5, characterized in that, The metal block is located on the upper surface of the protective layer; or, the metal block is disposed on the upper surface of the semiconductor island structure and is covered by the protective layer.

9. The flip-chip light-emitting diode according to claim 1, characterized in that, It also includes the first pad and the second pad; The area covered by the protective layer also includes the upper surface and sidewalls of the semiconductor light-emitting unit; the semiconductor light-emitting unit includes a first semiconductor layer, an active layer, and a second semiconductor layer; The first pad is located on the protective layer and is electrically connected to the first semiconductor layer in the semiconductor light-emitting unit through the protective layer; the second pad is located on the protective layer and is electrically connected to the second semiconductor layer in the semiconductor light-emitting unit through the protective layer; the protective layer is a distributed Bragg mirror or a single-layer insulating layer.

10. The flip-chip light-emitting diode according to claim 9, characterized in that, Neither the first pad nor the second pad is above the semiconductor island structure.

11. The flip-chip light-emitting diode according to claim 1, characterized in that, The number of semiconductor light-emitting units is 1.

12. The flip-chip light-emitting diode according to claim 11, characterized in that, The semiconductor light-emitting unit surrounds the periphery of the semiconductor island structure.

13. The flip-chip light-emitting diode according to claim 1, characterized in that, The number of semiconductor light-emitting units is multiple, and the multiple semiconductor light-emitting units are arranged at intervals; the number of semiconductor light-emitting units is either odd or even.

14. The flip-chip light-emitting diode according to claim 13, characterized in that, The semiconductor island structure is located between adjacent semiconductor light-emitting units.

15. The flip-chip light-emitting diode according to claim 14, characterized in that, The adjacent semiconductor light-emitting units are electrically connected.

16. The flip-chip light-emitting diode according to claim 1, characterized in that, There is a gap between the semiconductor island structure and the semiconductor light-emitting unit, and the width of the gap between the semiconductor island structure and the semiconductor light-emitting unit increases from bottom to top.

17. A flip-chip light-emitting diode, characterized in that, include: Substrate; Two semiconductor light-emitting units are located on the substrate; The semiconductor island structure has an upper surface and sidewalls, and is located independently of the two semiconductor light-emitting units on the substrate. When the flip-chip light-emitting diode is energized, the semiconductor island structure does not emit light. The semiconductor island structure is located between the two semiconductor light-emitting units and is located in the central region of the flip-chip light-emitting diode.

18. The flip-chip light-emitting diode according to claim 17, characterized in that, It also includes a protective layer that at least covers the upper surface and sidewalls of the semiconductor island structure.

19. The flip-chip light-emitting diode according to claim 17, characterized in that, The width of the upper surface of the semiconductor island structure is at least 30 μm.

20. The flip-chip light-emitting diode according to claim 17, characterized in that, The upper surface of the semiconductor island structure is circular or polygonal in shape.

21. The flip-chip light-emitting diode according to claim 17, characterized in that, The height of the semiconductor island structure is less than or equal to the height of the semiconductor light-emitting unit, and the thickness of the semiconductor light-emitting unit is 3 to 10 μm.

22. The flip-chip light-emitting diode according to claim 17, characterized in that, It also includes a metal block located above the semiconductor island structure, the thickness of which is between 0.5 and 10 μm.

23. The flip-chip light-emitting diode according to claim 22, characterized in that, The metal block is in direct contact with the upper surface of the semiconductor island structure.

24. The flip-chip light-emitting diode according to claim 17, characterized in that, It also includes a protective layer and a metal block, the protective layer covering at least the upper surface and sidewalls of the semiconductor island structure, and the metal block located on the upper surface of the protective layer.

25. The flip-chip light-emitting diode according to claim 17, characterized in that, It also includes a protective layer and a metal block, the metal block being disposed on the upper surface of the semiconductor island structure and covered by the protective layer.

26. The flip-chip light-emitting diode according to claim 24 or 25, characterized in that, It also includes the first pad and the second pad; The area covered by the protective layer also includes the upper surface and sidewalls of the semiconductor light-emitting unit; the semiconductor light-emitting unit includes a first semiconductor layer, an active layer, and a second semiconductor layer; The first pad is located on the protective layer and is electrically connected to the first semiconductor layer in the semiconductor light-emitting unit through the protective layer. The second pad is located on the protective layer and is electrically connected to the second semiconductor layer in the semiconductor light-emitting unit through the protective layer.

27. The flip-chip light-emitting diode according to claim 26, characterized in that, Neither the first pad nor the second pad is above the semiconductor island structure.

28. The flip-chip light-emitting diode according to claim 17, characterized in that, There is a gap between the semiconductor island structure and the semiconductor light-emitting unit. The width of the gap between the semiconductor island structure and the semiconductor light-emitting unit increases from bottom to top. The diameter of the upper surface of the semiconductor island structure is smaller than the diameter of the lower surface of the semiconductor island structure.

29. The flip-chip light-emitting diode according to claim 17, characterized in that, There is a gap between the two semiconductor light-emitting units, and the gap also surrounds the semiconductor island structure. The width W1 of the gap between the semiconductor island structure and the semiconductor light-emitting unit at the bottom is greater than or equal to 3μm.

30. The flip-chip light-emitting diode according to claim 17, characterized in that, It also includes interconnect electrodes that connect the two light-emitting units. From the top view of the flip-chip light-emitting diode, the interconnect electrodes are not located on the semiconductor island structure.

31. A flip-chip light-emitting diode, characterized in that, include: Substrate; Two semiconductor light-emitting units are located on the substrate; The semiconductor island structure has an upper surface and sidewalls, and is located independently of the two semiconductor light-emitting units on the substrate. The semiconductor island structure is located in the central region of the flip-chip light-emitting diode. When the flip-chip light-emitting diode is energized, the semiconductor island structure does not emit light. From a top view of the flip-chip light-emitting diode, it includes two interconnect electrodes, and the two interconnect electrodes are located on both sides of the semiconductor island structure.

32. The flip-chip light-emitting diode according to claim 31, characterized in that, It also includes a protective layer that at least covers the upper surface and sidewalls of the semiconductor island structure.

33. The flip-chip light-emitting diode according to claim 32, characterized in that, The width of the upper surface of the semiconductor island structure is at least 30 μm, or at least 50 μm.

34. The flip-chip light-emitting diode according to claim 32, characterized in that, The upper surface of the semiconductor island structure is circular or polygonal in shape.

35. The flip-chip light-emitting diode according to claim 32, characterized in that, The height of the semiconductor island structure is less than or equal to the height of the semiconductor light-emitting unit, and the thickness of the semiconductor light-emitting unit is 3 to 10 μm.

36. The flip-chip light-emitting diode according to claim 32, characterized in that, It also includes a metal block located above the semiconductor island structure, the thickness of which is between 0.5 and 10 μm.

37. The flip-chip light-emitting diode according to claim 36, characterized in that, The metal block is in direct contact with the upper surface of the semiconductor island structure.

38. The flip-chip light-emitting diode according to claim 32, characterized in that, It also includes a protective layer and a metal block, the protective layer covering at least the upper surface and sidewalls of the semiconductor island structure, and the metal block located on the upper surface of the protective layer.

39. The flip-chip light-emitting diode according to claim 32, characterized in that, It also includes a protective layer and a metal block, the metal block being disposed on the upper surface of the semiconductor island structure and covered by the protective layer.

40. The flip-chip light-emitting diode according to claim 38 or 39, characterized in that, It also includes the first pad and the second pad; The area covered by the protective layer also includes the upper surface and sidewalls of the semiconductor light-emitting unit; the semiconductor light-emitting unit includes a first semiconductor layer, an active layer, and a second semiconductor layer; The first pad is located on the protective layer and is electrically connected to the first semiconductor layer in the semiconductor light-emitting unit through the protective layer. The second pad is located on the protective layer and is electrically connected to the second semiconductor layer in the semiconductor light-emitting unit through the protective layer. Neither the first pad nor the second pad is above the semiconductor island structure.

41. The flip-chip light-emitting diode according to claim 32, characterized in that, There is a gap between the semiconductor island structure and the semiconductor light-emitting unit. The width of the gap between the semiconductor island structure and the semiconductor light-emitting unit increases from bottom to top. The diameter of the upper surface of the semiconductor island structure is smaller than the diameter of the lower surface of the semiconductor island structure. The width W1 of the gap between the semiconductor island structure and the semiconductor light-emitting unit at the bottom is greater than or equal to 3 μm.

42. The flip-chip light-emitting diode according to claim 32, characterized in that, There is a gap between the two semiconductor light-emitting units, and the gap also surrounds the semiconductor island structure.

43. A light-emitting device, characterized in that, Includes the flip-chip light-emitting diode as described in any one of claims 1 to 42.

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