In-situ temperature mapping for EPI chamber
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- APPLIED MATERIALS INC
- Filing Date
- 2021-08-17
- Publication Date
- 2026-06-05
Smart Images
Figure CN115552580B_ABST
Abstract
Description
background Technical Field
[0002] This disclosure relates to apparatus and methods for mapping temperatures in a processing chamber. In particular, the present invention relates to apparatus and methods for in-situ temperature mapping of a substrate in an epitaxial processing chamber. Background Technology
[0004] Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated devices and microdevices. Various semiconductor processing systems and / or chambers are used to perform various operations / methods in forming these devices on the semiconductor substrate. One method of processing a substrate involves etching a material onto the upper surface of the substrate. Another method involves depositing a material, such as a semiconductor material or a conductive material, onto the upper surface of the substrate.
[0005] Epitaxy is an example of a deposition process in which films of various materials are deposited on the surface of a substrate within a processing chamber. Epitaxy processes can produce such high-quality films on a substrate within a processing chamber under certain processing conditions (e.g., temperature, pressure, and precursor flow rate). Any variation in processing parameters (e.g., temperature, pressure, and precursor flow rate) can lead to variations in film thickness and distribution. During deposition, non-uniform gas flow, heat flow / transfer, or dopant gas concentration throughout the substrate surface can adversely cause the resulting silicon epitaxial layer to have different film properties at different locations. For example, the sheet resistance measured at the edge of the silicon epitaxial layer may differ from that measured at the center because the heat or processing precursor gas may not be uniformly distributed throughout the substrate surface. In some cases, the fluctuations in sheet resistance at different locations on the substrate surface can be quite large, which can adversely affect device performance reliability and even impair yield.
[0006] To monitor various processing conditions, sensors are used to determine the temperature of specific chamber components. Each sensor measures a specific location and therefore a single component. Therefore, during processing, multiple sensors are needed to measure components beyond a single chamber component, in addition to the substrate. All the sensors are combined to provide feedback for the proper processing of the substrate.
[0007] Therefore, there is a need for devices and methods to monitor and control the temperature of the substrate to ensure uniformity and to identify potential problems related to the wafer heating mechanism or wafer placement before the deposition step begins. Summary of the Invention
[0008] This invention provides a method and apparatus for processing a semiconductor substrate in an epitaxial chamber, the method and apparatus being configured to map a temperature profile for both the substrate and internal chamber components. In one embodiment, the semiconductor processing chamber has a body having a ceiling and a lower portion defining an internal space. A substrate support is disposed within the internal space. A mounting plate is externally coupled to the ceiling. A moving assembly is coupled to the mounting plate. A sensor is coupled to the moving assembly and is movable relative to the ceiling. The sensor is configured to detect temperature locations within the internal space.
[0009] In another embodiment, a sensor assembly for an epitaxial processing chamber is disclosed. The sensor assembly includes a sensor coupled to a movable assembly mounted outside the epitaxial processing chamber. The sensor is configured to detect temperature at a location disposed within the interior space of the epitaxial processing chamber, wherein the movable assembly is operable to direct the sensor to the location within the interior space for temperature sensing.
[0010] In another embodiment, a method for mapping the temperature of a substrate in a processing chamber is disclosed. The method begins by placing a substrate on a substrate support assembly within a processing chamber, wherein the processing chamber has a ceiling disposed above the substrate support assembly. A sensor is used to detect the temperature of the substrate, the sensor being disposed above the ceiling of the processing chamber. The sensor is movable relative to the ceiling, thereby traversing the substrate with multiple temperature readings. The multiple temperature readings are used to generate a temperature map of the substrate. Attached Figure Description
[0011] To gain a more detailed understanding of the above-described features of the present invention, a more specific description of the briefly summarized disclosure can be obtained by referring to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate only typical embodiments of the disclosure and should not be considered as limiting the scope of the disclosure, as the invention allows for other equivalent embodiments.
[0012] Figure 1 A cross-sectional view of one embodiment of the epitaxial processing chamber is schematically illustrated.
[0013] Figure 2A It is a schematic diagram with the following features: Figure 1 A side view of the mounting plate of one embodiment of the articulating sensor assembly in the epitaxial processing chamber.
[0014] Figure 2B This is a schematic diagram showing the arrangement along the path set at... Figure 1 A top view of the sensor's observation path on the top surface of the substrate in the epitaxial processing chamber.
[0015] Figure 3A It is a schematic diagram with the following features: Figure 1 A side view of the mounting plate of another embodiment of the hinged sensor assembly of the epitaxial processing chamber.
[0016] Figure 3B It is a schematic diagram for use Figure 3A Side view of the sensor's rotating bracket.
[0017] Figure 4 It is a schematic diagram. Figure 1 A top view of the window in the mounting plate on the ceiling of the extended processing chamber.
[0018] Figure 5 It is a method for mapping the temperature of a substrate in a processing chamber.
[0019] For ease of understanding, the same reference numerals are used as much as possible to represent common elements in the figures. It is anticipated that elements and features of one embodiment may be advantageously incorporated into other embodiments without further description.
[0020] However, it should be noted that the accompanying drawings only illustrate exemplary embodiments of the invention and should not be considered as limiting the scope of the invention, as the invention may allow for other equivalent embodiments. Detailed Implementation
[0021] For film deposition, such as in epitaxial chambers, substrate support assemblies are often used to support the substrate and heat it during processing. The substrate is heated by absorbing radiation from lamps located outside the epitaxial chamber. The substrate support assembly and the substrate are rotated to minimize temperature non-uniformity caused by direct radiation from the lamps. Ideally, the rotation makes the temperature distribution axisymmetric. As discussed below, an articulated sensor is disclosed to provide real-time operational feedback on processing parameters of the processing chamber. For example, the sensor measures the temperature of the substrate at several locations to help maintain optimal processing conditions and identify potential problems that, if left uncorrected, could lead to an asymmetric thermal profile on the substrate. For example, the temperature sensor can detect temperature disparities on the substrate indicating that the substrate is outside the pocket (i.e., not properly positioned and centered on the substrate support assembly). Furthermore, the temperature sensor can be used to confirm the integrity of the processing temperature across the entire substrate surface and other components of the epitaxial chamber.
[0022] By using an articulated sensor, at least two methods for measuring temperature distribution throughout a substrate become possible. In one example, a radial scanning pyrometer is used as the sensor. This pyrometer analyzes a wavelength (e.g., 2.4 μm) at which Si is opaque and quartz is transparent, and moves on a linear, arcing, or rotating stage. This wafer pyrometer can be guided (e.g., articulated) to scan along a radius extending from the chamber body and terminating at the center of the substrate. The IR signal of the scan obtained by the wafer pyrometer, relative to the rotational speed of the substrate support assembly, is recorded as a function of the radius. The radial scanning pyrometer can be additionally used to tune chamber parameters to enable real-time thermal uniformity monitoring / control, or to enable continuous run-to-run control using feedback of a mapping of the measured temperature location relative to a desired temperature for the same location within the processing chamber. The device is also suitable for establishing references for chamber setups and for chamber-to-chamber matching. In some implementations, one or more sensors (e.g., thermometers or thermal cameras) may be mounted on a linear or curved motion control console spanning the top of the processing chamber. Such sensors are suitable for monitoring the temperature at the outermost edges of the chamber and substrate, which is not feasible using current large-spot pyrometers.
[0023] The signals collected from the sensors are recorded as a function of polar coordinates on the processing plane. The processing plane may include a preheating ring, the edge of the substrate support assembly, and the substrate or even the chamber liner. Depending on the desired resolution (e.g., n = 49 sampling points (e.g., positions)) and the rotational speed (ω) of the substrate support assembly, the stage speed (Vs) can be adjusted to collect the required number of data points during “m” complete substrate rotations scanning the radius of the processing plane. If needed or desired, the measurement can be repeated, and the data can be averaged. If an equidistant temperature distribution on the substrate in the radial direction is desired, a variable speed on a straight (or curved) stage can be used. Alternatively, a variable rotational speed of the substrate support assembly can provide similar results for determining the equidistant temperature distribution of the substrate.
[0024] The mapping of substrate temperature can be an axisymmetric mapping in a two-dimensional (2D) plane or in a three-dimensional (3D) plane.
[0025] The sensor is mounted to a stage. In one example, the sensor is fixedly mounted to the stage. In another example, the sensor is gimbaled and / or rotatably mounted to the stage. The stage may allow additional movement of the sensor. For example, the sensor is mounted to a stage with linear travel. In another example, the sensor is mounted to a stage that rotates to target different points across the processing plane. In yet another example, a combination of linear and rotational movements of the stage with the sensor mounted can be implemented to increase the detection range within the chamber.
[0026] Figure 1 A cross-sectional view of one embodiment of an epitaxial processing chamber 100 according to an embodiment of the present invention is illustrated schematically. In one embodiment, the epitaxial processing chamber 100 suitable for benefiting from the present invention is an EPI (Epidermal Processing) system for near-atmospheric chemical vapor deposition (CVD). This system is available from Applied Materials, Inc., Santa Clara, California. The epitaxial processing chamber 100 shown schematically herein is one embodiment and is not intended to limit all possible embodiments. It is contemplated that other substrate processing chambers, including chambers from other manufacturers, may be used according to the embodiments described herein.
[0027] The epitaxial chamber 100 includes a chamber body 101, a support system 104, and a chamber controller 106. The chamber body 101 includes an upper reflector module 102 and a lower lamp module 103. The upper reflector module 102 includes a region within the chamber body 101 located between a ceiling 116 and a substrate support assembly 132 disposed within the chamber body 101. The ceiling 116 may be formed of transparent quartz or other suitable material. In one example, the ceiling 116 may be an upper dome. The epitaxial chamber 100 additionally includes a hinged sensor assembly 200. The hinged sensor assembly 200 is coupled to the epitaxial chamber 100. In one example, the hinged sensor assembly 200 is coupled to a mounting plate 190 attached to the ceiling 116. The mounting plate 190 may additionally be a reflector. The mounting plate 190 reflects energy back to the substrate and may have openings only where the hinged sensor assembly 200 needs a line of sight to the processing space. Alternatively, the hinged sensor assembly 200 may be directly attached to the ceiling 116.
[0028] The lower lamp module 103 includes a region within the chamber body 101 located between a lower portion 130 and a substrate support assembly 132. In one example, the lower portion 130 may be a lower dome. The deposition process typically occurs on the upper surface of a substrate 125 supported on the substrate support assembly 132 and exposed to the upper reflector module 102. The substrate 125 is supported by support pins 121 disposed below the substrate 125 and extending from the substrate support assembly 132.
[0029] The upper liner 118 is disposed within the upper reflector module 102 and is adapted to prevent unwanted deposits from forming on the chamber components. Within the upper reflector module 102, the upper liner 118 is positioned adjacent to the ring 123. (The purpose of the ring 123 is explained.)
[0030] The epitaxial chamber 100 includes multiple heat sources, such as lamps 135, which are adapted to provide heat to components located within the epitaxial chamber 100. For example, lamps 135 may be adapted to provide heat to substrate 125 and ring 123. The lower portion 130 may be formed of an optically transparent material such as quartz to allow thermal radiation to pass through it.
[0031] The chamber body 101 also includes an external inlet port 198 formed through the sidewalls of the chamber body 101 and a central inlet port 152 formed in the central region of the upper dome, to which a central gas line 154 is coupled. An external gas line (not shown) and an internal gas line 111 may be coupled to the external inlet port 198 and the central inlet port 152, respectively, to deliver gas supplied from the gas plate module 107. An exhaust port 127 may be coupled to the chamber body 101 to maintain the epitaxial chamber 100 within a desired regulated pressure range as needed. The external inlet port 198 may be adapted to provide gas (including doped gas, reactive gas, non-reactive gas, inert gas, or any suitable gas) through which it enters the upper reflector module 102 of the chamber body 101. A lamp 135 induces the thermal decomposition of the gas onto the substrate 125, which is configured to form an epitaxial layer on the substrate 125.
[0032] The substrate support assembly 132 is positioned within the lower lamp module 103 of the chamber body 101. The substrate support assembly 132 is illustrated as supporting the substrate 125 in a processing position. The substrate support assembly 132 includes a plurality of support pins 121 and a plurality of lifting rods 133. The lifting rods 133 are vertically movable and adapted to contact the underside of the substrate 125 to raise the substrate 125 from the processing position (as shown) to the substrate transport position. Components of the substrate support assembly 132 may be made of quartz, silicon carbide, silicon carbide-coated graphite, or other suitable materials.
[0033] A ring 123 is removably disposed on a lower liner 140, which is coupled to the chamber body 101. The ring 123 is disposed around the interior space of the chamber body 101 and surrounds the substrate 125 when the substrate 125 is in the processing position. The ring 123 may be formed of a thermally stable material, such as silicon carbide, quartz, or graphite coated with silicon carbide. The ring 123, combined with the substrate 125 in this position, separates the space of the upper reflector module 102 from the lower lamp module 103. When the substrate 125 is positioned flush with the ring 123, the ring 123 guides gas flow through the upper reflector module 102. By controlling the flow of processing gas when providing processing gas to the epitaxial chamber 100, the separated space of the upper reflector module 102 enhances deposition uniformity.
[0034] Support system 104 includes components for performing and monitoring predetermined processes, such as epitaxial film growth in epitaxial chamber 100. Support system 104 includes one or more of the following: a gas plate module 107, gas distribution conduits, a power supply, and process control instruments. Chamber controller 106 is coupled to support system 104 and is adapted to control epitaxial chamber 100 and support system 104. Chamber controller 106 includes a central processing unit (CPU), memory, and support circuitry. Instructions residing in chamber controller 106 can be executed to control the operation of epitaxial chamber 100. Epitaxial chamber 100 is adapted to perform one or more film formation or deposition processes. For example, silicon epitaxial growth can be performed within epitaxial chamber 100. It is contemplated that other processes can be performed within epitaxial chamber 100.
[0035] During film deposition in the epitaxial chamber 100, the substrate 125 is heated. The substrate 125 is heated by absorbing radiation from the lamp 135. The substrate support assembly 132 and the substrate 125 are rotated to minimize temperature non-uniformity caused by direct radiation from the lamp 135.
[0036] The articulated sensor assembly 200 utilizes temperature sensing to provide real-time operational feedback for processing parameters within the epitaxial chamber 100. The articulated sensor assembly 200 has one or more sensors 201, 202 configured to provide temperature information, which can be moved to detect the orientation of temperature at selected locations within the epitaxial chamber 100. For example, the articulated sensor assembly 200 can be operated to move one or more sensors 201, 202 to an orientation capable of sensing the temperature of one or more of the following: upper liner 118, ring 123, lower portion 130, ceiling 116, substrate 125, substrate support assembly 132, or other internal chamber components. In one example, sensor 201 measures the temperature of substrate 125 to help maintain optimal processing conditions and identify potential problems that may cause asymmetric heat distribution on substrate 125. For example, sensor 201 can detect when substrate 125 is not properly positioned on substrate support assembly 132 and confirm the integrity of the processing temperature across the entire surface of substrate 125. The articulated sensor assembly 200 can be configured to move and / or rotate the sensor 201 in a linear manner.
[0037] Figure 2A It is a schematic diagram with applicable Figure 1 A side view of the mounting plate 190 of one embodiment of the hinged sensor assembly 200 in the epitaxial processing chamber 100. A reflector 292 is attached to the mounting plate 190 and is symbolically shown as the boundary region surrounding the upper reflector module 102. In some instances, the mounting plate 190 is the reflector and the reflector 292 is part of the mounting plate 190. Similarly, when the substrate support assembly 132 can be as... Figure 2A The solid or as shown Figure 1 When shown as hollow, the substrate support assembly 132 is illustrated as a solid body. The operation of the hinged sensor assembly 200 is not limited by the construction of the epitaxial processing chamber 100 or other processing chambers.
[0038] The articulated sensor assembly 200 includes a pedestal 290 to which a sensor 201 is attached. The pedestal 290 is mounted on a linear track 210. The linear track 210 can be a rail or other suitable mechanism to ensure linear movement of the pedestal 290 attached to the linear track 210. A movement assembly 260 can control the position of the pedestal along the linear track 210. The movement assembly 260 can be a linear motor, servo motor, stepper motor, cylinder, hydraulic cylinder, or other type of actuator suitable for generating movement of the pedestal 290 along the linear track 210. In this way, the movement of the pedestal 290 can be precisely limited to the length and orientation of the linear track 210. Therefore, the sensor 201, mounted in the pedestal 290, moves relative to the mounting plate 190 and the ceiling 116. The linear track 210 may have a length 284 sufficient to move the pedestal 290 from the center 280 of the epitaxial processing chamber 100 to the reflector 292.
[0039] A window 294 is formed in a reflector above mounting plate 190 and / or ceiling 116. (To be continued...) Figure 4 , Figure 4 This is a schematic top view of a window 294 in the mounting plate 190 of the epitaxial processing chamber 100. The sensor 201 is configured to move with the stage 290 while simultaneously maintaining alignment with the window 294, such that the sensor 201 can detect the temperature within the epitaxial processing chamber 100 while moving with the stage 290. The window 294 may be formed of quartz or other materials transparent to the sensing signal from the sensor 201.
[0040] Sensor 201 is configured to detect the temperature at a selected location within the interior space of the epitaxial processing chamber 100. Sensor 201 may be a pyrometer, a camera, or other suitable device for measuring temperature. In one example, sensor 201 is a camera operating at a wavelength between about 8 μm and about 14 μm. In another example, sensor 201 is a pyrometer operating at, for example, a wavelength of 2.4 μm, at which wavelength the quartz material in window 294 is transparent, i.e., a wavelength less than about 4 μm. The wavelength of sensor 201 may be modified or changed to measure the temperature of ceiling 116 below window 294. Sensor 201 may be fixed to pedestal 290 such that the orientation of sensor 201 relative to mounting plate 190 does not change as sensor 201 moves along linear track 210. Sensor 201 emits a sensing beam 250, which is guided through window 294 into epitaxial processing chamber 100. The sensing beam 250 can be moved from the center 282 of the epitaxial processing chamber 100 to the outer limit, i.e., the reflector 292, for measuring parameters of the epitaxial processing chamber 100 or the substrate 125 disposed within the epitaxial processing chamber 100.
[0041] Figure 2BThis is a schematic top view illustrating a view path 240 along the top surface 225 of a substrate 125 disposed in an epitaxial processing chamber 100, with sensor 201. The view path 240 is generated by a sensing beam 250 emitted by sensor 201 traversing the top surface 225 of substrate 125. Substrate 125 is rotated at an angular velocity (ω) by rotation 232 of substrate support assembly 132. The combination of rotation 232 of substrate support assembly 132 and linear velocity 211 of sensor 201 along linear track 210 can be adjusted when forming various view paths 240. For example, sensor 201 may extend along a first radius 284, projecting beam 250 onto a first sampling position 241. The combination of rotation 232 and linear velocity 211, along with the sampling interval, forms the view path 240. For example, the first sampling position 241, the second sampling position 242, the third sampling position 243, the fourth sampling position 244, the fifth sampling position 245, the sixth sampling position 246, and the seventh sampling position 247 are all combined to form the observation path 240. It should be understood that if equal distances in the radial direction are required, the linear velocity 211 can be set to zero, i.e., no movement, while rotation 232 is performed. In this manner, an asymmetric mapping or a realistic 3D map can be generated, illustrating the temperature of the substrate 125.
[0042] It should also be understood that, in the absence of a substrate, beam 250 can be focused onto substrate support assembly 132 to determine the temperature of substrate support assembly 132. Similarly, when determining the temperature of lower dome 114 or other chamber components, beam 250 can be focused across substrate support assembly 132. It can also be shown that by sampling at equal intervals in the radial direction along the outer periphery of substrate 125, it can be determined whether substrate 125 is outside the cavity of substrate support assembly 132. For example, the temperature distribution along the outer edge of substrate 125 can show cold or hot arcs, where substrate support assembly 132 is actually being sampled by beam 250 rather than the intended substrate 125.
[0043] Figure 3A It is a schematic diagram with features that can be used Figure 1 A side view of the mounting plate 190 of another embodiment of the hinged sensor assembly 200 of the epitaxial processing chamber 100. The epitaxial processing chamber 100 is related to the above. Figure 1 and Figure 2A The substance under discussion is similar. The articulated sensor assembly 200 has a sensor 201 attached to the base 300.
[0044] Figure 3BThis is a schematic side view of a pedestal 300 coupled to sensor 201. The pedestal 300 may be fixed, i.e., immovable, or have a rotating support 310. The pedestal 300 has a base 312 and an upright support 314. Sensor 201 may be fixed or may be movably attached to the upright support 314. For example, sensor 201 may be attached to the upright support 314 via a pivot 370 extending through the upright support 314. The pivot 370 may be fixedly attached to sensor 201 such that rotation of the pivot 370 rotates sensor 201, which in turn orients sensor 201 to allow temperature information to be obtained from different locations within the epitaxial processing chamber 100. Alternatively, the pivot 370 may extend freely through sensor 201, allowing sensor 201 to rotate about the pivot 370 and independently of the rotation of the pivot 370. For example, pivot 370 may be a smooth rod to fit through an oversized whole in sensor 201, for example, sensor 201 may move independently of the smooth rod.
[0045] Sensor 201 can be moved about one or more axes of rotation. For example, sensor 201 can rotate along a centerline 380 orthogonal to mounting plate 190 (as shown by arrow 372). Alternatively, sensor 201 can rotate along a pivot 370 extending parallel to mounting plate 190 (as shown by arrow 374). One or more moving components 260 can provide rotation as illustrated by arrows 372 and / or 374 for guiding the bundle 350 of sensor 201 to different selected locations within the epitaxial processing chamber 100.
[0046] In one example, sensor 201 rotates about pivot 370 while pedestal 300 remains stationary. Rotation of sensor 201 about pivot 370 is controlled by a moving assembly 260. Moving assembly 260 may be a cylinder, motor, or other actuator suitable for moving pivot 370 and sensor 201 together, or for moving sensor 201 about pivot 370. Base 312 may have slots or other features to prevent interruption of beam 350 when it is guided into epitaxial processing chamber 100. In another example, base 312 may be formed of a quartz material that is transparent to beam 350. Thus, as sensor 201 rotates about pivot 370, beam 350 is controllably guided from center 280 to reflector 292. When the substrate support assembly 132 rotates the substrate 125, the beam 350, which rotates about the pivot through an angle 386, linearly traverses a length 384 along the substrate 125, allowing temperature information throughout the entire substrate 125 to be obtained using a single sensor 201. This configuration allows for similar... Figure 2B The bundle paths shown and described.
[0047] In another example, sensor 201 is fixed about pivot 370, while pedestal 300 is rotatable by means of rotating support 310. Let's turn back to... Figure 4 , Figure 4 schematically illustrated Figure 1 A window 295 is located in the mounting plate 190 of the epitaxial processing chamber 100. The window 295 is curved to match the rotation of the sensor 201 on the rotating bracket 310. A moving assembly 260 may be part of the rotating bracket 310, or alternatively mounted to the mounting plate 190 or the pedestal 300 to rotate the rotating bracket 310. The rotating bracket 310 is movable through rotations of approximately 180 degrees to approximately 360 degrees. The rotational movement of the sensor 201, combined with the rotation of the substrate support assembly 132, causes a path across the entire surface of the scanning substrate 125 to orient the beam for mapping the substrate temperature. In extreme cases, rotation of the sensor 201 (i.e., close to 180 degrees and 0 degrees) can move the sensor beam 350 away from the substrate 125 for measuring the temperature of chamber components (e.g., the lower portion 130 of the epitaxial chamber 100, etc.).
[0048] In another example, sensor 201 can rotate about pivot 370 and is also rotated by rotating support 310. This rotation of both axes allows the beam 350 to be guided in a manner that increases the location where temperature can be sensed by sensor 201. Therefore, processing conditions within the epitaxial chamber environment can be monitored and maintained more closely. By controlling the movement of beam 350 and substrate support assembly 132, a comprehensive mapping of the temperature along the top of substrate support assembly 132 and substrate 125 can be obtained. This comprehensive mapping enables more precise control of the epitaxial process.
[0049] In yet another example, sensor 201 is rotatable about pivot 370, rotated by rotating bracket 310, and travels linearly along linear track 210. This arrangement allows sensor 201 to reach and detect the temperature of virtually all surfaces within the interior space of the epitaxial chamber 100, such as upper liner 118, ring 123, lower portion 130, ceiling 116, substrate 125, substrate support assembly 132, or other internal chamber components.
[0050] Figure 5 This is a flowchart of a method 500 for mapping the temperature of a substrate in a processing chamber. Method 500 begins at operation 510, where a substrate is placed on a substrate support assembly within an epitaxial processing chamber. The epitaxial processing chamber has an upper dome that encloses the internal space and is positioned above the substrate support assembly. In one example, the epitaxial processing chamber is as described with respect to the figures above.
[0051] In operation 520, a hinged sensor positioned above the upper dome of the processing chamber is used to detect the temperature of the substrate. In one example, the sensor is a pyrometer. In another example, the sensor is a camera.
[0052] In operation 530, the sensor moves relative to the upper dome to obtain multiple temperature readings across the substrate surface. The sensor can move linearly along a linear track coupled to the cover. Alternatively or additionally, the sensor is coupled to a pedestal that supports the sensor for rotation and / or linear movement, and this pedestal is coupled to the cover. In other alternatives or additions to the previous examples, the sensor can rotate about a pivot on the pedestal supporting the sensor.
[0053] In operation 540, multiple temperature readings are used to generate a temperature map of the substrate. This temperature map is a temperature map of the substrate disposed within the epitaxial processing chamber. The temperature map may additionally or alternatively be a temperature map of chamber components used to monitor the health of the epitaxial processing chamber. The temperature map may display processing skew. The temperature map may additionally provide an indication of error conditions, such as the substrate not being properly positioned on the substrate support assembly. The temperature map may include calculated and / or measured temperature locations. In one example, a computer with a processor and memory may run a software routine that takes measured temperature locations as input and interpolates between these locations to provide calculated temperatures to form the temperature map. The temperature map may be compared to an acceptable temperature range at one or more locations on the temperature map. Messages may be sent in response to determining that the temperature map has sampled or calculated temperatures at one or more locations outside the acceptable range.
[0054] The 3D maps constructed using the disclosed invention can be further combined with supervised or unsupervised machine learning algorithms, some of which automatically identify error scenarios and notify the user. For example, a set of scenarios where the substrate extends beyond the base cavity can be mapped, and this set of scenarios can be used to train the algorithm. In another instance, abnormal temperatures of other components in the chamber (e.g., base, preheating ring, upper or lower dome) can also be identified by artificial intelligence and machine learning algorithms, trained with deliberately designed errors, such as issues related to lamps, dome coatings, cracks, or base coating degradation. Each of these training sets can be used to enhance the algorithm to intelligently identify problems and immediately notify the user or automatically schedule relevant inspections and / or maintenance procedures during the next planned maintenance period, depending on the severity of the problem.
[0055] Advantageously, in the above example, sensor 201 is movable relative to ceiling 116 and is capable of accurately monitoring processing conditions (e.g., temperature deviations) and potential error conditions (e.g., substrate 125 not being properly positioned on substrate support assembly 132). Thus, a single sensor can replace multiple sensors while providing greater benefit and understanding of processing conditions that reduce defects on the substrate.
[0056] While the foregoing description pertains to embodiments of the present invention, other and further embodiments of the present invention may be devised without departing from the basic scope of the present invention, and the scope of the present invention is determined by the appended claims.
Claims
1. A semiconductor processing chamber, comprising: The main body has a ceiling and a lower portion that define the interior space; A substrate support member, wherein the substrate support member is disposed in the internal space; A movable component, located above the ceiling and outside the interior space; and A sensor, coupled to the movable component and rotatable relative to the ceiling, is configured to detect the temperature location within the interior space.
2. The semiconductor processing chamber of claim 1, wherein the sensor is configured to detect the temperature of the lower portion of the body and the substrate support through a window above the ceiling.
3. The semiconductor processing chamber of claim 2, wherein the moving component further comprises: Mounting plate, which couples the movable component to the ceiling; A linear track, the linear track being coupled to the mounting plate; and A rotating platform configured to travel along the track, wherein the sensor is mounted to the rotating platform and the rotating platform is configured to rotate the sensor relative to the ceiling.
4. The semiconductor processing chamber of claim 3, wherein the substrate support is configured to rotate, and the moving component is configured to move the sensor, and wherein the sensor has a helical readout path for the temperature position along the substrate support.
5. The semiconductor processing chamber of claim 4, wherein the stage is configured to rotate.
6. The semiconductor processing chamber of claim 3, wherein the sensor is a pyrometer.
7. The semiconductor processing chamber of claim 2, wherein the moving component further comprises: Mounting plate, which couples the movable component to the ceiling; A rotating platform, which is attached to the mounting plate; and A gimbal is attached to the rotating platform, and the sensor is mounted on the gimbal, wherein the rotating platform and the gimbal provide the sensor with two degrees of rotation.
8. The semiconductor processing chamber of claim 7, wherein the sensor is rotatable to detect a first temperature of the lower portion of the body and a second temperature of the substrate support.
9. The semiconductor processing chamber of claim 8, wherein the sensor is a pyrometer.
10. A sensor assembly for an epitaxial processing chamber, the sensor assembly comprising: A movable component, the movable component being coupled to a mounting plate disposed outside the epitaxial processing chamber; and A sensor, coupled to the movable component, is configured to detect a temperature location within the interior space of the epitaxial processing chamber, wherein the sensor is rotatable relative to the epitaxial processing chamber in generating a temperature map of the interior space of the epitaxial processing chamber.
11. The sensor assembly of claim 10, wherein the moving component further comprises: A rotating platform, which is attached to the mounting plate; and A gimbal is attached to the rotating platform, and the sensor is mounted on the gimbal, wherein the rotating platform and the gimbal provide the sensor with two degrees of rotation.
12. The sensor assembly of claim 11, wherein the sensor is a pyrometer.
13. The sensor assembly of claim 11, wherein the moving component further comprises: A linear track that couples the mounting plate to the rotary table, wherein the rotary table is configured to travel along the track and the sensor is mounted to the rotary table.
14. A method for mapping the temperature of a substrate in a processing chamber, the method comprising the steps of: A substrate is placed on a substrate support assembly within a processing chamber, wherein the processing chamber has a ceiling disposed above the substrate support assembly; A sensor is used to detect the temperature of the substrate, the sensor being positioned above the ceiling of the processing chamber; The sensor is moved about an axis relative to the ceiling to sense the substrate with multiple temperature readings; and The multiple temperature readings are used to generate a temperature map of the substrate.
15. The method of claim 14, wherein the step of moving the sensor relative to the ceiling further comprises the following steps: The sensor is moved along a linear track, which is coupled to a rotating platform and the ceiling.
16. The method of claim 14, wherein the step of moving the sensor relative to the ceiling further comprises the following steps: A rotating platform that supports the sensor is rotatably coupled to the ceiling.
17. The method of claim 14, wherein the step of moving the sensor relative to the ceiling further comprises the following steps: The rotating platform moves linearly along a linear track coupled to the ceiling; The rotating platform supporting the sensor is rotated, wherein the rotating platform is coupled to the linear track; and The sensor is pivoted relative to the rotating platform supporting it.
18. The method of claim 14, further comprising the following steps: Compare the calculated and measured temperature locations in the temperature map with a map of acceptable temperatures; and A message is sent when it is determined that the temperature map has samples outside the acceptable range or at calculated locations.
19. The method of claim 14, further comprising the following steps: The temperature map is used in machine learning algorithms to identify error scenarios; and Arrange relevant events based on identified errors.