Image Simulation Method and System for Injecting Measured Image Data into a Resistance Array

Abstract

The present invention provides an image simulation method for injecting measured image data into a resistor array, comprising: obtaining resistor array response characteristic information and extracting valid data from the measured image data; converting the valid data according to the resistor array field of view and resolution; after performing non-linear mapping on the gray level distribution of the measured data according to the resistor array response characteristic information, injecting the converted valid data into the resistor array; a product to be tested collects the converted valid data in the resistor array and conducts a simulation test. The present invention injects measured image data into a resistor array target simulation system to test the performance of an infrared guidance system, and can reproduce the entire process of an outdoor test in a laboratory, enabling the product under test to find problems and conduct tests, and helping technicians to find and locate problems occurring in the product under test.

Claims

1. An image simulation method for injecting measured image data into a resistor array, characterized in that, it includes: Step S1: Obtain the resistor array response characteristic information and extract the valid data from the measured image data; Step S2: Convert the valid data according to the resistor array field of view and resolution; Step S3: After performing non-linear mapping on the gray distribution of the converted valid data according to the resistor array response characteristic information, inject the mapped valid data into the resistor array; Step S4: The product to be tested collects the mapped valid data in the resistor array and conducts a simulation test; The said Step S3 includes: Step S3.1: Collect the image sequence T' in the measured data in the external field list (i, j), query the minimum gray value in the image sequence, and the calculation formula is as follows: T′ min = min(T list ′(i, j) | i = 1, 2,... k; j = 1, 2,... l Among them, T' min represents the minimum gray value in the measured data image sequence, list is the serial number of the image sequence, and T' list (i, j) represents the gray value of the i-th row and the j-th column in the list-th sequence image; k and l respectively represent the horizontal pixel size and the vertical pixel size of the simulation data of the resistor array target simulation system; Step S3.2: Query the input image sequence M of the mapped resistor array list The minimum value M of (i, j) min , and the calculation formula is as follows: Among them, M min represents the minimum value of the input image sequence of the mapped resistor array, and T min represents the minimum value of the product response; M list (i, j) represents the input value of the resistor array corresponding to the i-th row and the j-th column in the image of the list-th serial number; Step S3.3: Calculate the difference between each pixel value in each image of the image sequence in the actually measured data collected in the external field and T′ min The calculation formula is as follows: ΔT′ list (i,j) = T′ list (i,j) - T′ min where, ΔT′ list (i, j) represents the difference between each pixel value in each image of the image sequence in the actually measured data collected by the external field and T′ min ; Step S3.4: Let ΔM list (i,j) = ΔT′ list (i,j), and map according to the following calculation formula to obtain the input image sequence of the resistor array as: where, ΔM list (i, j) is the difference between each pixel value in each image of the input image sequence of the resistor array and M min ; Step S3.5: Judge whether each pixel value in the image sequence with a resolution of k×l in the converted image data in the measured data collected in the external field has been traversed. If so, the mapping is completed; if not, trigger Step S3.

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2. The image simulation method for injecting measured image data into a resistor array according to claim 1, characterized in that, the resistor array response characteristic information includes a resistor array response characteristic model; the resistor array response characteristic model divides the resistor array response area into a background area and a target area; the resistor array response characteristic model divides four quadrants in the background area, calibrates the background area respectively, and forms a calibrated area; the resistor array response characteristic model lights resistor array pixels of different sizes in the calibrated area, each size traverses and lights the energy that the product to be tested can intercept, collects the energy response data of the product to be tested, and obtains the response curve M=f[T] corresponding one-to-one between the resistor array input in the background area and the target area and the output of the product to be tested, where M is the resistor array value, T is the product response value, and f[] is the response curve.

3. The image simulation method for injecting measured image data into a resistor array according to claim 1, characterized in that, Step S2 includes: Step S2.1: Obtain the resolution of the measured data collected in the external field, extract the resolution and field of view angle of the valid data, the number of pixels and field of view angle of the resistor array; Step S2.2: Convert the resolution of the valid data, and the calculation formula is as follows: where x and y respectively represent the horizontal pixel size and vertical pixel size of the converted valid data, s and t respectively represent the horizontal pixel size and vertical pixel size of the extracted valid data, a and b respectively represent the horizontal opening angle size and vertical opening angle size of the sensor imaging field of view angle of the measured data, m and n respectively represent the horizontal pixel size and vertical pixel size of the measured data, k and l respectively represent the horizontal pixel size and vertical pixel size of the resistor array target simulation system simulation data, c and d respectively represent the horizontal opening angle size and vertical opening angle size of the resistor array target simulator system field of view angle; Step S2.3: Judge whether the resolution of the valid data is consistent with the resolution of the resistor array target simulation system simulation data. If x>k or y>l, intercept the valid data with a resolution of k×l; if x<k or y<l, the insufficient image area needs to be filled with 0, and finally ensure that the image resolution of the valid data is k×l.

4. The image simulation method for injecting measured image data into a resistor array according to claim 1, characterized in that, After completing the simulation test, compare the statistical characteristics of the simulation data and the measured data to see if the similarity of the statistical mean and statistical variance of the two image sequences is less than 80%. If it is satisfied, the injection simulation is completed; if not, further subdivide the background area and the target area in the resistor array response characteristic model, and recalibrate the resistor array response characteristic curve.

5. An image simulation system for injecting measured image data into a resistor array, characterized in that, it includes: Module M1: Obtain the resistor array response characteristic information and extract the valid data from the measured image data; Module M2: Convert the valid data according to the resistor array field of view and resolution; Module M3: After performing a non-linear mapping on the gray distribution of the converted valid data according to the resistor array response characteristic information, inject the mapped valid data into the resistor array; Module M4: The product to be tested collects the mapped valid data in the resistor array and performs a simulation test; The module M3 includes: Module M3.1: Collect the image sequence T′ in the actually measured data in the field list (i,j), query the minimum gray value in the image sequence, and the calculation formula is as follows: T′ min = min(T′ list (i, j) | i = 1, 2,... k; j = 1, 2,... l where, T' min represents the minimum gray value in the measured data image sequence, list is the serial number of the image sequence, and T' list (i, j) represents the gray value of the i-th row and the j-th column in the list-th sequence image; k and l respectively represent the horizontal pixel size and the vertical pixel size of the simulation data of the resistor array target simulation system; Module M3.2: Query the input image sequence M of the mapped resistor array list The minimum value of M at (i, j) min , and the calculation formula is as follows: Among them, M min represents the minimum value of the input image sequence of the resistor array after mapping, and T min represents the minimum value of the product response; M list (i, j) represents the input value of the resistor array corresponding to the i-th row and the j-th column in the list-th image; Module M3.3: Calculate the difference between each pixel value in each image of the image sequence in the actually measured data collected in the external field and T′ min The calculation formula is as follows: ΔT′ list (i,j) = T′ list (i,j) - T′ min where, ΔT′ list (i,j) represents the difference between each pixel value in each image of the image sequence in the measured data collected by the external field and T′ min ; Module M3.4: Let ΔM list (i,j) = ΔT′ list (i,j), and perform mapping according to the following calculation formula to obtain the input image sequence of the resistor array as: Among them, ΔM list (i,j) is the difference between each pixel value and M in each image of the input image sequence of the resistor array min ; Module M3.5: Determine whether each pixel value in the image sequence with a converted image data resolution of k×l in the measured data collected in the external field has been traversed. If so, the mapping is completed; if not, trigger module M3.

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6. The image simulation system for injecting measured image data into a resistor array according to claim 5, characterized in that, the resistor array response characteristic information includes a resistor array response characteristic model; the resistor array response characteristic model divides the resistor array response area into a background area and a target area; the resistor array response characteristic model divides four quadrants in the background area, and calibrates the background area respectively to form a calibrated area; the resistor array response characteristic model lights resistor array pixels of different sizes in the calibrated area, and each size traverses and lights the energy that can be intercepted by the product to be tested, collects the energy response data of the product to be tested, and obtains the response curve M=f[T] corresponding one-to-one between the resistor array input in the background area and the target area and the output of the product to be tested, where M is the resistor array value, T is the product response value, and f[] is the response curve.

7. The image simulation system for injecting measured image data into a resistor array according to claim 5, characterized in that, Module M2 includes: Module M2.1: Obtain the resolution of the measured data collected in the external field, the resolution and field of view angle after extracting the valid data, the number of pixels and the field of view angle of the resistor array; Module M2.2: Convert the resolution of the valid data, and the calculation formula is as follows: where x and y respectively represent the horizontal pixel size and vertical pixel size of the converted valid data, s and t respectively represent the horizontal pixel size and vertical pixel size of the extracted valid data, a and b respectively represent the horizontal opening angle size and vertical opening angle size of the sensor imaging field of view angle of the measured data, m and n respectively represent the horizontal pixel size and vertical pixel size of the measured data, k and l respectively represent the horizontal pixel size and vertical pixel size of the simulation data of the resistor array target simulation system, and c and d respectively represent the horizontal opening angle size and vertical opening angle size of the field of view angle of the resistor array target simulator system; Module M2.3: Determine whether the resolution of the valid data is consistent with the resolution of the simulation data of the target analog system of the resistor array. If x > k or y > l, intercept the valid data with a resolution of k × l; if x < k or y < l, the insufficient image area needs to be filled with 0s to ultimately ensure that the image resolution of the valid data is k × l.

8. The image simulation system for injecting measured image data into a resistor array according to claim 5, wherein, after completing the simulation test, compare the statistical characteristics of the simulation data and the measured data to see if the similarity of the statistical means and statistical variances of the two image sequences is less than 80%. If it is satisfied, the injection simulation is completed; if not, further subdivide the background area and the target area in the resistor array response characteristic model and recalibrate the resistor array response characteristic curve.

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