A quantum device, a method of manufacturing the same, and an electronic device

Abstract

The application discloses a quantum device and an electronic device and a preparation method thereof, and belongs to the field of quantum information. The quantum device comprises a quantum chip, a signal transmission element formed on the quantum chip, and a connecting part electrically connected with the signal transmission element; a packaging substrate, a lead-out part formed on the packaging substrate, and a lead-out signal line for electrically connecting with a signal connector, the lead-out signal line being electrically connected with the lead-out part; and a ball grid array electrically connecting the corresponding connecting part and the lead-out part. The ball grid array electrically connects the connecting part and the lead-out part corresponding to the signal transmission attribute, thereby realizing the electrical connection between the quantum chip and the transmission line, and further leading out the connecting part to the external signal connector. In the application, the ball grid array does not generate a complex field effect, and the electrical connection of the corresponding connecting part and the lead-out part by the ball grid array can avoid the interference caused by the bonded aluminum wire.

Description

Technical Field

[0001] This application belongs to the field of quantum information, especially the field of quantum computing technology. In particular, this application relates to a quantum device and its preparation method and an electronic device. Background Technology

[0002] Quantum chips carrying qubits require a stable operating environment. Therefore, to reduce the impact of the external environment on quantum chips, they are typically packaged first and then operated at low temperatures. During packaging, the signal ports of the quantum chip need to be electrically connected to a transmission line located outside the quantum chip. This transmission line is used to bring out the signal ports to realize signal input and output. Therefore, the electrical connection performance between the signal ports and this transmission line directly affects signal transmission, and thus affects the operation of the quantum chip.

[0003] In existing technologies, aluminum wire bonding is typically used to electrically connect signal ports to the aforementioned transmission lines. However, as the number of qubits increases, the number of signal ports on the quantum chip also increases. The method of connecting signal ports and transmission lines with aluminum wire bonding results in a multiple increase in the number of aluminum wires. Each aluminum wire introduces impedance and inductive reactance, thereby introducing complex field effects. These complex field effects cause unpredictable interference to the transmitted signals on the quantum chip. Invention Content

[0004] The purpose of this application is to provide a quantum device, a method for fabricating the same, and an electronic device to solve the problem in the prior art where aluminum wires connecting quantum chips to external transmission lines introduce complex field effects, causing unpredictable interference to the transmitted signals on the quantum chip.

[0005] One embodiment of this application provides a quantum device, comprising:

[0006] A quantum chip, wherein a signal transmission element is formed on the quantum chip, and a connection portion electrically connected to the signal transmission element is formed thereon;

[0007] A packaging substrate having leads formed thereon and lead signal lines for electrical connection to a signal connector, the lead signal lines being electrically connected to the leads; and

[0008] A ball grid array that electrically connects the corresponding connecting portion and the lead-out portion.

[0009] In the quantum device described above, the surface of the connection portion that contacts the ball grid array is higher than the surface of the quantum chip.

[0010] In the quantum device described above, the surface of the connection portion that contacts the ball grid array is a flat plane or an arc-shaped convex surface.

[0011] In the quantum device described above, the signal transmission element is located on a first surface of the quantum chip, the connection portion is located on a second surface of the quantum chip opposite to the first surface, and a through hole is formed between the first surface and the second surface, wherein a superconducting metal for electrically connecting the connection portion and the signal transmission element is formed in the through hole.

[0012] In the quantum device described above, the perforation extends through the connection portion.

[0013] In the quantum device described above, the connecting part is titanium nitride.

[0014] The quantum device described above, wherein the quantum chip comprises:

[0015] A first substrate, on which a first portion of the signal transmission element is formed, and a coupled quantum bit and a readout resonant cavity are formed, wherein the first portion is coupled to the quantum bit or the readout resonant cavity;

[0016] A second substrate, on which a second portion of the signal transmission element is formed;

[0017] A superconducting element that electrically connects the first portion to the second portion.

[0018] In the quantum device described above, the superconducting element is indium.

[0019] In the quantum device described above, the second substrate is flip-chip bonded to the packaging substrate, and the first substrate is flip-chip bonded to the second substrate.

[0020] In the quantum device described above, there are multiple packaging substrates, which are stacked together, and the lead-out portion of each packaging substrate is electrically connected to the corresponding connection portion.

[0021] Another embodiment of this application provides a method for fabricating a quantum device, comprising:

[0022] A quantum chip is provided, wherein a signal transmission element and a connection portion electrically connected to the signal transmission element are formed on the quantum chip;

[0023] A packaging substrate is provided, wherein leads are formed on the packaging substrate, and lead signal lines for connection to a signal connector are formed thereon, the lead signal lines being electrically connected to the leads; and

[0024] A ball grid array is formed to electrically connect the connecting portion and the corresponding lead-out portion.

[0025] A third embodiment of this application provides an electronic device, comprising:

[0026] A package assembly; a signal connector mounted in the package assembly; and a quantum device as described above, the quantum device being located within the package assembly, and the lead-out signal line being electrically connected to the signal connector.

[0027] Compared with the prior art, the quantum device provided in this application includes a quantum chip, a packaging substrate, and a ball grid array. The quantum chip has a signal transmission element and a connection portion electrically connected to the signal transmission element. The packaging substrate has a lead-out portion and a lead-out signal line for electrical connection with a signal connector. The lead-out signal line is electrically connected to the lead-out portion. The ball grid array electrically connects the connection portion and the lead-out portion corresponding to the signal transmission attributes, thereby realizing the electrical connection between the quantum chip and the lead-out signal line. Then, the connection portion is led out and electrically connected to an external signal connector. In this application, the ball grid array does not generate complex field effects. By using the ball grid array to electrically connect the corresponding connection portion and the lead-out portion, the field effect interference introduced by the bonding aluminum wire can be avoided. Attached Figure Description

[0028] Figure 1 (a) is a schematic diagram of the structure of a quantum chip in the prior art. Figure 1 (b) is a schematic diagram of the transmission line leading out of the signal port and the bonding connection to the quantum chip;

[0029] Figure 2 This is a schematic diagram of the structure of the packaging substrate 2 according to an embodiment of this application.

[0030] Figure 3 This is a schematic diagram of the structure of a quantum device according to an embodiment of this application;

[0031] Figure 4 This is a schematic diagram of the structure of a quantum device according to another embodiment of this application;

[0032] Figure 5 This is a schematic diagram of the structure of the first substrate 17 and the second substrate 18 of a quantum chip according to an embodiment of this application;

[0033] Figure 6 This is a schematic flowchart illustrating the steps of a method for fabricating a quantum device in one embodiment of this application.

[0034] Explanation of reference numerals in the attached figures:

[0035] 1-Quantum chip, 10-Quantum bit, 11-Read resonant cavity, 12-XY transmission line, 13-Z transmission line, 14-Read transmission line, 15-Connection part, 16-Perforation;

[0036] 17-First substrate, 18-Second substrate, 121-First part XY transmission line, 122-Second part XY transmission line, 131-First part Z transmission line, 132-Second part Z transmission line, 141-First part read transmission line, 142-Second part read transmission line;

[0037] 2-Packaging substrate, 21-Leadout section, 22-Leadout signal line, 23-Connector connector;

[0038] 3-Ball grid array. Detailed Implementation

[0039] The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0040] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the various embodiments of this application will be described in detail below with reference to the accompanying drawings. However, those skilled in the art will understand that many technical details have been provided in the various embodiments of this application to help readers better understand this application. However, the technical solutions claimed in this application can be implemented even without these technical details and various changes and modifications based on the following embodiments. The division of the various embodiments below is for the convenience of description and should not constitute any limitation on the specific implementation of this application. The various embodiments can be combined with and referenced by each other without contradiction.

[0041] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0042] Additionally, it should be understood that when a layer (or film), region, pattern, or structure is referred to as being "on" a substrate, layer (or film), region, and / or pattern, it can be located directly on another layer or substrate, and / or intercalation layers may also be present. Furthermore, it should be understood that when a layer is referred to as being "under" another layer, it can be located directly under that layer, and / or one or more intercalation layers may also be present. Additionally, references to "on" and "under" the layers may be made based on the accompanying drawings.

[0043] Figure 1 (a) is a schematic diagram of the structure of a quantum chip in the prior art. Figure 1 (b) is a schematic diagram of the transmission line leading out of the signal port and the bonding connection to the quantum chip.

[0044] Quantum computing is a novel computing paradigm that manipulates quantum information units to perform calculations according to the laws of quantum mechanics. One of the most fundamental principles upon which quantum computing is based is the superposition principle, which allows quantum information units to exist in a superposition of multiple possible states. This gives quantum information processing greater potential efficiency compared to classical information processing. A quantum chip is the processor in a quantum computer that performs quantum calculations; the qubit structure contained within the quantum chip serves as the processor's processing unit.

[0045] The quantum chip 1 integrates multiple one-to-one corresponding and mutually coupled qubits 10 and readout resonant cavities 11. The end of each readout resonant cavity 11 furthest from its corresponding qubit is connected to a readout transmission line 14 integrated on the quantum chip. The readout transmission line 14 is used to receive probe signals and transmit feedback signals for the probe signals. Each qubit 10 is coupled to an XY transmission line 12 and a Z transmission line 13. The XY transmission line 12 receives quantum state modulation signals, and the Z transmission line 13 receives magnetic flux modulation signals. The magnetic flux modulation signals include bias voltage signals and / or pulse bias modulation signals, both of which can modulate the frequency of the qubit. The readout transmission line 14 receives readout probe signals and transmits readout feedback signals. Specifically, a frequency-increasing pulse signal, commonly referred to as a readout probe signal, is applied through the readout transmission line 14. The readout probe signal is typically a microwave signal with a frequency of 4-8 GHz. The quantum state of the qubit is determined by analyzing the readout feedback signal output from the readout transmission line 14.

[0046] XY transmission line 12, Z transmission line 13, and read transmission line 14 have signal ports for inputting signals from external transmission lines and / or outputting signals from the quantum chip to external transmission lines, schematically, as shown. Figure 1 The connecting part 15 in the middle should be noted that... Figure 1(b) The structures of other functional components besides the connecting part 15 are not shown. When the transmission line is electrically connected to the signal port on the quantum chip 1 via bonding aluminum wires, the aluminum wires increase the inductance in the signal transmission path, affecting signal transmission. As the number of qubits increases, the number of signal ports on the quantum chip 1 also increases. The number of aluminum wires in the structure of the aluminum wire bonding connecting the transmission line and the quantum chip increases exponentially. Each aluminum wire introduces impedance and inductive reactance, thereby introducing complex field effects. These complex field effects cause unpredictable interference to the transmitted signal on the quantum chip 1, resulting in a significant deviation between the actual signal transmission mode of the quantum chip and the expected signal transmission mode.

[0047] The embodiments of this application propose a quantum device, a method for fabricating a quantum device, and an electronic device to solve the problem in the prior art that the method of connecting a quantum chip and an external transmission line with aluminum wire introduces complex field effects, causing unpredictable interference to the signal transmission on the quantum chip.

[0048] Figure 2 This is a schematic diagram of the structure of the packaging substrate 2 according to an embodiment of this application. Figure 3 This is a schematic diagram of the structure of a quantum device according to an embodiment of this application.

[0049] Combination Figure 2 and Figure 3 As shown in the embodiments of this application, a quantum device includes:

[0050] A quantum chip 1 is provided, on which signal transmission elements are formed and connection portions 15 electrically connected to the signal transmission elements. For example, the quantum chip 1 is a superconducting quantum chip, and the signal transmission elements include at least one of the following: XY transmission lines 12 coupled to qubits 10 on the superconducting quantum chip, Z transmission lines 13 coupled to qubits 10 on the superconducting quantum chip, and readout transmission lines 14 coupled to readout resonant cavities 11 on the superconducting quantum chip. The connection portions 15 are metal patterns formed on the quantum chip by coating or deposition. Each XY transmission line 12, each Z transmission line 13, and each readout transmission line 14 is electrically connected to the corresponding connection portion 15.

[0051] A packaging substrate 2 has leads 21 formed thereon and lead signal lines 22 for electrical connection with a signal connector. The lead signal lines 22 are electrically connected to the leads 21. In this embodiment, the packaging substrate 2 may be a PCB (Printed Circuit Board); and

[0052] The ball grid array 3 electrically connects the corresponding connection portion 15 and the lead-out portion 21. It is understood that in quantum devices including superconducting quantum chips, the ball grid array 3 may include multiple tin balls formed using superconducting materials such as tin, that is, multiple tin balls are used to electrically connect the corresponding connection portion 15 and the lead-out portion 21.

[0053] Compared with the prior art, in the quantum device provided in this application embodiment, the ball grid array 3 electrically connects the connection part 15 and the lead-out part 21 corresponding to the signal transmission attributes, thereby realizing the electrical connection between the quantum chip 1 and the lead-out signal line 22, and then leading the connection part 15 to the external signal connector through the lead-out signal line 22. Figure 1 (The signal connector connected to connector 23 is not shown.) Compared to the aluminum wire connection in the prior art, the ball grid array 3 in this embodiment does not generate complex field effects. By electrically connecting the corresponding connection part 15 and the lead-out part 21 using the ball grid array 3, the complex field effects introduced by the bonding aluminum wire can be avoided, that is, the interference of complex field effects on the signal transmission of the quantum chip is avoided. It should be noted that the corresponding signal transmission attribute means that the signals transmitted by the connection part 15 and the lead-out part 21 electrically connected by the ball grid array 3 are the same for the quantum chip. For example, if the connection part 15 is used to receive the quantum state control signal, the lead-out part 21, which corresponds to the signal transmission attribute of the connection part 15, is used to transmit the quantum state control signal.

[0054] Figure 4 This is a schematic diagram of the structure of a quantum device according to another embodiment of this application, wherein, Figure 4 The structures of other functional components besides the connecting part 15 and the through hole 16 are not shown.

[0055] Combination Figure 3 and Figure 4 As shown, in some embodiments of this application, the surface of the connecting portion 15 that contacts the ball grid array 3 is higher than the surface of the quantum chip 1. That is, the surface of the connecting portion 15 on the side away from the quantum chip 1 protrudes outward relative to the surface of the quantum chip 1 where the connecting portion 15 is located. This is to avoid the problem of soldering voids that would occur if the surface of the connecting portion 15 that contacts the ball grid array 3 is concave. Specifically, in the case of a concave surface, air is not easily expelled when soldering with solder balls or the like, which can then accumulate and form soldering voids. In one specific embodiment, the surface of the connecting portion 15 that contacts the ball grid array 3 is a flat plane or an arc-shaped convex surface.

[0056] Combination Figure 4 As shown, in some other embodiments of this application, the signal transmission element is located on the first surface of the quantum chip 1 (see...). Figure 4The upper surface of the quantum chip), the connection portion 15 is located on the second surface of the quantum chip 1 opposite to the first surface (see the upper surface of the quantum chip 1). Figure 4 The lower surface of the quantum chip has a through-hole 16 formed between the first surface and the second surface. A superconducting metal for electrically connecting the connection portion 15 and the signal transmission element is formed within the through-hole 16. This means that the patterns of the connection portion 15 and other functional elements such as the signal transmission element on the quantum chip 1 are located on different surfaces of the quantum chip. In this structure, the welding structure of the ball grid array 3 has a relatively small impact on the signal transmission element and other functional elements on the quantum chip 1. For example, the superconducting metal within the through-hole 16 can be a superconducting metal layer attached to the inner wall of the through-hole 16, or it can be a superconducting metal pillar that completely fills the through-hole 16.

[0057] For example, the perforation 16 penetrates the connection portion 15, and the superconducting metal is a superconducting metal layer attached to the inner wall of the perforation 16. The superconducting metal layer inside the perforation 16 forms an air exhaust channel, which helps to exhaust air during soldering, such as solder balls, and avoids soldering voids caused by air accumulating at the soldering contact surface between the solder ball and the connection portion 15 and being unable to be exhausted.

[0058] For example, the connecting part 15 is made of titanium nitride. For instance, the connecting part 15 is a titanium nitride pad formed on the surface of the quantum chip 1. Titanium nitride is easy to adhere and can be electrically connected to solder balls in the BGA process without the need for an intermediate metal.

[0059] Figure 5 This is a schematic diagram of the structure of the first substrate 17 and the second substrate 18 of a quantum chip according to an embodiment of this application.

[0060] Combination Figure 5 As shown, in some embodiments of this application, the quantum chip 1 includes:

[0061] A first substrate 17 is formed on the first substrate 17, and a first portion of the signal transmission element, a quantum bit 10 and a readout resonant cavity 11 are coupled and connected thereto. The first portion is coupled and connected to the quantum bit 10 or the readout resonant cavity 11. In this embodiment of the application, the first portion of the signal transmission element may be, for example, a first portion XY transmission line 121, a first portion Z transmission line 131, and a first portion readout transmission line 141.

[0062] A second substrate 18 is on which a second portion of the signal transmission element is formed. In this embodiment, the second portion of the signal transmission element may, for example, be: a second portion XY transmission line 122, a second portion Z transmission line 132, and a second portion readout transmission line 142; and

[0063] A superconducting element electrically connects the first portion and the second portion. For example, the superconducting element electrically connects the first portion XY transmission line 121 and the second portion XY transmission line 122, the superconducting element electrically connects the first portion Z transmission line 131 and the second portion Z transmission line 132, and the superconducting element electrically connects the first portion readout transmission line 141 and the second portion readout transmission line 142.

[0064] To avoid the space occupied by the intricate wiring on the quantum chip affecting the expansion of the number of qubits, some embodiments of this application divide the signal transmission element into different parts and place them on different substrates. When the first part of the signal transmission element is connected to the second part of the signal transmission element, a complete patterned structure of the signal transmission element is formed. This structural arrangement allows more space on the substrate used to fabricate the qubit patterned structure, thereby facilitating the expansion of the number of qubits. In specific implementations, the superconducting element can be a structure formed of any superconducting material; for example, the superconducting element is an indium pillar.

[0065] In some embodiments of this application, the second substrate 18 is flip-chip bonded to the packaging substrate 2, and the first substrate 17 is flip-chip bonded to the second substrate 18. When the patterned structures of the connector 15 and the quantum bit 1 are located on different substrates, the signal transmission element can be led out to the packaging substrate 2 by using solder balls through flip-chip bonding.

[0066] In some embodiments of this application, there are multiple packaging substrates 2, which are stacked together, and the lead-out portion 21 of each packaging substrate 2 is electrically connected to the corresponding connection portion 15. Considering that when the number of qubits is large, the number of signal connectors required for packaging is large, and the connectors (e.g., SMA connectors or SMP connectors) are usually large in size and occupy a certain space, the lead-out portions 21 of multiple packaging substrates 2 are electrically connected to the corresponding connection portions 15, which facilitates the distribution of external signal connectors on multiple packaging substrates 2 and their connection to the connectors 23.

[0067] Figure 6 This is a schematic flowchart illustrating a method for fabricating a quantum device in one embodiment of this application.

[0068] Combination Figure 6 As shown in the embodiments of this application, a method for fabricating a quantum device includes:

[0069] A quantum chip 1 is provided, wherein a signal transmission element and a connection portion 15 electrically connected to the signal transmission element are formed on the quantum chip 1; exemplaryly, the quantum chip 1 is a superconducting quantum chip, and the signal transmission element includes at least one of the following: an XY transmission line 12 coupled to a quantum bit 10 on the superconducting quantum chip, a Z transmission line 13 coupled to a quantum bit 10 on the superconducting quantum chip, and a readout transmission line 14 coupled to a readout resonant cavity 11 on the superconducting quantum chip;

[0070] A packaging substrate 2 is provided, on which lead-out portions 21 and lead-out signal lines 22 for connection with a signal connector are formed. The lead-out signal lines 22 are electrically connected to the lead-out portions 21. In this embodiment, the packaging substrate 2 may be a PCB (Printed Circuit Board); and

[0071] A ball grid array 3 is formed to electrically connect the connection portion 15 and the corresponding lead-out portion 21. It is understood that in quantum devices including superconducting quantum chips, the ball grid array 3 may include multiple tin balls formed using superconducting materials such as tin, that is, multiple tin balls are used to electrically connect the corresponding connection portion 15 and the lead-out portion 21.

[0072] In one embodiment of this application, the quantum chip 1 is flip-chip mounted on the packaging substrate 2, and the connection portion 15 and the corresponding lead-out portion 21 are electrically connected by the formed ball grid array 3.

[0073] In another embodiment of this application, the quantum chip 1 is mounted on the packaging substrate 2, and the connection portion 15 and the corresponding lead-out portion 21 are electrically connected by a formed ball grid array 3. Specifically, the signal transmission element is formed on a first surface of the quantum chip 1, and the connection portion 15 is formed on a second surface of the quantum chip 1 opposite to the first surface. Then, a through-hole 16 is formed between the first surface and the second surface, and a superconducting metal for electrically connecting the connection portion 15 and the signal transmission element is formed within the through-hole 16. Exemplarily, the superconducting metal located within the through-hole 16 can be a superconducting metal layer attached to the inner wall of the through-hole 16, or it can be a superconducting metal pillar that completely fills the through-hole 16. In one example, the through-hole 16 penetrates the connection portion 15, and the superconducting metal is a superconducting metal layer attached to the inner wall of the through-hole 16. The superconducting metal layer within the through-hole 16 forms an air exhaust channel, which helps to exhaust air during soldering, such as solder balls, and avoids soldering voids caused by air accumulating at the soldering contact surface between the solder ball and the connection portion 15 and being unable to escape. In another example, the connection portion 15 is made of titanium nitride. For example, the connection portion 15 is a titanium nitride pad formed on the surface of the quantum chip 1. Titanium nitride is easy to adhere and can be electrically connected to solder balls in the BGA process without the need for an intermediate metal.

[0074] In some embodiments of this application, to facilitate the expansion of the number of qubits, the provided quantum chip 1 includes:

[0075] A first substrate 17 is formed on the first substrate 17, and a first portion of the signal transmission element, as well as a coupled quantum bit 10 and a readout resonant cavity 11 are formed on the first substrate 17. The first portion is coupled to the quantum bit 10 or the readout resonant cavity 11. In this embodiment of the application, the first portion of the signal transmission element may be, for example, a first portion XY transmission line 121, a first portion Z transmission line 131, and a first portion readout transmission line 141.

[0076] A second substrate 18 is on which a second portion of the signal transmission element is formed. In this embodiment, the second portion of the signal transmission element may, for example, be: a second portion XY transmission line 122, a second portion Z transmission line 132, and a second portion readout transmission line 142; and

[0077] A superconducting element electrically connects the first portion and the second portion. For example, the superconducting element electrically connects the first portion XY transmission line 121 to the second portion XY transmission line 122, the superconducting element electrically connects the first portion Z transmission line 131 to the second portion Z transmission line 132, and the superconducting element electrically connects the first portion readout transmission line 141 to the second portion readout transmission line 142.

[0078] Compared with the prior art, the quantum device prepared by the preparation method in the embodiments of this application electrically connects the connection part 15 and the lead-out part 21 corresponding to the signal transmission attributes using the ball grid array 3, thereby realizing the electrical connection between the quantum chip 1 and the lead-out signal line 22, and then leading the connection part 15 to the external signal connector. Since the ball grid array 3 does not generate complex field effects, the electrical connection of the corresponding connection part 15 and the lead-out part 21 using the ball grid array 3 during the packaging of the quantum chip 1 can avoid the interference introduced by the bonding aluminum wire.

[0079] This application also provides an electronic device, including: a packaging assembly; a signal connector mounted on the packaging assembly; and the quantum device described in the above embodiments, wherein the quantum device is located within the packaging assembly, and the lead-out signal line 22 is electrically connected to the signal connector. For example, the lead-out signal line 22 is electrically connected to the signal connector via a connector joint 23. For example, the packaging assembly may be a packaging box or other structural components that can isolate the quantum device from the external environment.

[0080] The above description, based on the embodiments shown in the drawings, details the structure, features, and effects of this application. The above description is only a preferred embodiment of this application, but this application does not limit the scope of implementation to what is shown in the drawings. Any changes made in accordance with the concept of this application, or modifications to equivalent embodiments, that do not exceed the spirit covered by the specification and drawings, should be within the protection scope of this application.

Claims

1. A quantum device, characterized in that, include: A quantum chip, wherein a signal transmission element is formed on the quantum chip, and a connection portion electrically connected to the signal transmission element is formed thereon; A packaging substrate having leads formed thereon and lead signal lines for electrical connection with a signal connector, the lead signal lines being electrically connected to the leads; as well as A ball grid array, wherein the ball grid array electrically connects the corresponding connecting portion and the lead-out portion; The surface of the connecting portion that contacts the ball grid array is higher than the surface of the quantum chip; The signal transmission element is located on the first surface of the quantum chip, the connection portion is located on the second surface of the quantum chip opposite to the first surface, and a through hole is formed between the first surface and the second surface, and a superconducting metal for electrically connecting the connection portion and the signal transmission element is formed in the through hole; The perforation extends through the connecting portion.

2. The quantum device according to claim 1, characterized in that, The surface of the connecting part that contacts the ball grid array is a flat plane or an arc-shaped convex surface.

3. The quantum device according to claim 1, characterized in that, The connecting part is made of titanium nitride.

4. The quantum device according to claim 1, characterized in that, The quantum chip includes: A first substrate on which a first portion of the signal transmission element is formed, and a coupled quantum bit and a readout resonant cavity are formed, wherein the first portion is coupled to the quantum bit or the readout resonant cavity. A second substrate, on which a second portion of the signal transmission element is formed; A superconducting element that electrically connects the first portion to the second portion.

5. The quantum device according to claim 4, characterized in that, The superconducting element is indium.

6. The quantum device according to claim 4, characterized in that: The second substrate is flip-chip bonded to the packaging substrate, and the first substrate is flip-chip bonded to the second substrate.

7. The quantum device according to claim 1, characterized in that, There are multiple packaging substrates, which are stacked together, and the lead-out portion of each packaging substrate is electrically connected to the corresponding connection portion.

8. A method for fabricating a quantum device, characterized in that, include: A quantum chip is provided, wherein a signal transmission element and a connection portion electrically connected to the signal transmission element are formed on the quantum chip; A packaging substrate is provided, wherein a lead-out portion is formed on the packaging substrate and a lead-out signal line for connection with a signal connector is formed thereon, and the lead-out signal line is electrically connected to the lead-out portion; as well as A ball grid array is formed to electrically connect the connecting portion and the corresponding lead-out portion; The surface of the connecting portion that contacts the ball grid array is higher than the surface of the quantum chip; The signal transmission element is located on the first surface of the quantum chip, the connection portion is located on the second surface of the quantum chip opposite to the first surface, and a through hole is formed between the first surface and the second surface, and a superconducting metal for electrically connecting the connection portion and the signal transmission element is formed in the through hole; The perforation extends through the connecting portion.

9. An electronic device, characterized in that, include: Encapsulated components; A signal connector, which is mounted on the packaging assembly; as well as The quantum device according to any one of claims 1-7, wherein the quantum device is located within the packaging assembly, and the lead-out signal line is electrically connected to the signal connector.

Images