High-efficiency heat dissipation optical module TEC device and use method

Abstract

The application discloses a high-efficiency heat-dissipation optical module TEC device and a use method thereof, and relates to an optical module. The high-efficiency heat-dissipation optical module TEC device comprises a TEC assembly assembled in the optical module, and the TEC assembly comprises an upper ceramic cover plate, a lower ceramic cover plate and one or more than one copper plate, a P-type semiconductor, an N-type semiconductor and an N+ type semiconductor. In the application, the composition structure of the TEC assembly is optimized, and the TEC assembly as a whole behaves as refrigeration, so that the problem of additional heat dissipation of the TEC assembly does not need to be considered, the traditional refrigeration mode is broken, the heat dissipation efficiency of the optical module is improved, and the cost required for heat dissipation is saved.

Description

Technical Field

[0001] This invention relates to the field of optical module technology, and more specifically to a high-efficiency heat dissipation optical module TEC device and its usage method. Background Technology

[0002] Currently, heat dissipation of optical modules remains a key consideration in the development of optical communication, especially for high-speed optical modules which generate enormous amounts of heat, necessitating solutions that prioritize efficient heat dissipation and low cost. Optical module heat dissipation typically relies on TEC (thermal energy storage device). TEC is a solid-state cooling technology based on the Peltier effect of thermoelectric materials: when two different conductors form a circuit, if a direct current is applied to the circuit, one node will release heat while the other node will cool; when the current direction is reversed, the heat flow direction is also reversed.

[0003] In existing technologies, traditional optical modules (TECs) are generally composed of a dozen to several dozen chips. However, the cooling capacity of a single thermoelectric material chip is limited, and even if dozens of chips are combined, the overall heat dissipation efficiency of the TEC will still be affected. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide an optical module TEC device and its usage method that improves heat dissipation efficiency and saves heat dissipation costs by optimizing the composition of TEC.

[0005] To solve the above-mentioned technical problems, the present invention adopts the following technical solution: a high-efficiency heat dissipation optical module TEC device, which relates to an optical module, including a TEC assembly assembled in the optical module, the TEC assembly including an upper ceramic cover plate, a lower ceramic cover plate, and one or more copper plates, P-type semiconductors, N-type semiconductors and N+ type semiconductors;

[0006] Multiple P-type semiconductors and multiple N-type semiconductors are staggered and evenly spaced to form an S-shaped circuit. A copper plate is horizontally placed on top of the P-type semiconductors and N-type semiconductors to form a semiconductor group. An N+ type semiconductor is horizontally placed between two adjacent semiconductor groups. An upper ceramic cover plate is horizontally placed on top of the multiple copper plates, and a lower ceramic cover plate is horizontally placed at the bottom of the multiple N+ type semiconductors.

[0007] Furthermore, in the S-type circuit, an N-type semiconductor is disposed between two adjacent P-type semiconductors, and a P-type semiconductor is disposed between two adjacent N-type semiconductors.

[0008] Furthermore, in the S-type circuit, the end facing the current input direction of the power supply terminal is set as the N-type semiconductor.

[0009] Furthermore, the semiconductor group has multiple semiconductors arranged in a rectangular array in the S-shaped circuit. The semiconductor group includes the copper plate and P-type semiconductors and N-type semiconductors fixed at intervals on the bottom surface of the copper plate. The N+ type semiconductor is horizontally connected between the bottom of the P-type semiconductor / N-type semiconductor and the N-type semiconductor / P-type semiconductor of two adjacent semiconductor groups.

[0010] Furthermore, the N+ type semiconductor includes a straight-plate general-purpose component and an L-shaped electrode component. There are multiple general-purpose components, which are used to horizontally connect two adjacent semiconductor groups in the horizontal direction or in the vertical direction. There are at least two electrode components, which are used to connect the P-type semiconductor or N-type semiconductor in each semiconductor group located at the beginning and end of the S-type circuit to the power supply terminal.

[0011] Furthermore, one end of the lower ceramic cover plate extends outward beyond the upper ceramic cover plate, and the two electrode components are mirror-attached to this end of the lower ceramic cover plate and are respectively connected to the positive and negative poles of the power supply.

[0012] Furthermore, the N+ type semiconductor is an N-type semiconductor containing a high concentration of phosphorus, and the electrons in the N+ type semiconductor are in a higher energy level state, which means they are more likely to lose electrons.

[0013] Furthermore, the energy level relationship among the four metals—copper plate, P-type semiconductor, N-type semiconductor, and N+ type semiconductor—is as follows: P-type semiconductor < copper plate < N-type semiconductor < N+ type semiconductor.

[0014] A method of using a high-efficiency heat dissipation optical module TEC device, comprising the high-efficiency heat dissipation optical module TEC device, the method comprising the following steps:

[0015] S1: Based on the principle that the direction of electron flow is opposite to the direction of current flow, when the current is input into the S-shaped circuit in a clockwise direction, the electrons are input into the S-shaped circuit in a counterclockwise direction. The direction of electron movement is as follows: N+ type semiconductor → P type semiconductor → copper plate → N type semiconductor → N+ semiconductor → ... → N+ semiconductor, and so on in a cycle.

[0016] S2: Based on the thermal effect of electron movement between metals at different energy levels: electrons need to absorb heat to move from a lower energy level metal to a higher energy level metal, and electrons release heat to move from a higher energy level metal to a lower energy level metal. Therefore, the heat release / absorption sequence of electrons in the S-shaped circuit is as follows: heat release → heat absorption → heat absorption → heat absorption → heat release → ... → heat absorption, cycling in this order. This is equivalent to the upper ceramic cover plate exhibiting heat absorption and cooling as a whole, while the lower ceramic cover plate exhibits alternating heat absorption and heat release, neither cooling nor heating. In summary, this is equivalent to the TEC assembly exhibiting cooling as a whole.

[0017] The beneficial effects of this invention are reflected in:

[0018] In this invention, an N-type semiconductor containing a high concentration of phosphorus is used to replace the copper metal in the ceramic cover plate of the traditional TEC. Based on the thermal effect generated by the movement of electrons between metals of different energy levels, the arrangement and combination of metals of different energy levels are designed to optimize the composition structure of the TEC assembly. This is equivalent to the TEC assembly as a whole performing cooling, eliminating the need to consider the additional heat dissipation problem of the TEC assembly. This breaks the traditional cooling method, improves the heat dissipation efficiency of the optical module, and saves the cost required for heat dissipation. Attached Figure Description

[0019] Figure 1 This is an assembly diagram of a TEC assembly and an optical module according to an embodiment of the present invention.

[0020] Figure 2 This is an isometric view of the overall structure of a TEC assembly according to an embodiment of the present invention.

[0021] Figure 3 This is a TEC assembly after removing the upper ceramic cover plate according to an embodiment of the present invention.

[0022] Figure 4 This is a schematic diagram of the TEC assembly disassembled according to an embodiment of the present invention.

[0023] Figure 5 This is a circuit loop according to an embodiment of the present invention.

[0024] Figure 6 This is an equivalent circuit schematic diagram of an embodiment of the present invention.

[0025] Figure 7 This is a simplified diagram of the equivalent circuit principle of an embodiment of the present invention.

[0026] The components in the attached diagram are labeled as follows: 1. Optical module; 2. TEC assembly; 3. Upper ceramic cover plate; 4. Copper plate; 5. P-type semiconductor; 6. N-type semiconductor; 7. N+ type semiconductor; 701. General purpose component; 702. Electrode component; 8. Lower ceramic cover plate. Detailed Implementation

[0027] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. It should be noted that if the embodiments of the present invention involve directional indicators (such as up, down, left, right, front, back, etc.), the directional indicators are only used to explain the relative positional relationship and movement of the components in a specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indicators will also change accordingly.

[0028] See Figures 1-7 .

[0029] This invention provides a high-efficiency heat dissipation optical module TEC device, which relates to an optical module 1 and includes a TEC assembly 2 assembled in the optical module 1. The TEC assembly 2 includes an upper ceramic cover plate 3, a lower ceramic cover plate 8, and one or more copper plates 4, a P-type semiconductor 5, an N-type semiconductor 6, and an N+ type semiconductor 7.

[0030] Multiple P-type semiconductors 5 and multiple N-type semiconductors 6 are staggered and evenly spaced to form an S-shaped circuit. A copper plate 4 is horizontally disposed on top of the P-type semiconductors 5 and N-type semiconductors 6 to form a semiconductor group. An N+ type semiconductor 7 is horizontally disposed between two adjacent semiconductor groups. An upper ceramic cover plate 3 is horizontally disposed on top of multiple copper plates 4, and a lower ceramic cover plate 8 is horizontally disposed on the bottom of multiple N+ type semiconductors 7.

[0031] In this invention, an N-type semiconductor containing a high concentration of phosphorus is used to replace the copper metal in the ceramic cover plate of the traditional TEC. Based on the thermal effect generated by the movement of electrons between metals of different energy levels, the arrangement and combination of metals of different energy levels are designed to optimize the composition structure of the TEC assembly. This is equivalent to the TEC assembly as a whole performing cooling, eliminating the need to consider the additional heat dissipation problem of the TEC assembly. This breaks the traditional cooling method, improves the heat dissipation efficiency of the optical module, and saves the cost required for heat dissipation.

[0032] In one embodiment, in the S-shaped circuit, an N-type semiconductor 6 is disposed between two adjacent P-type semiconductors 5, and a P-type semiconductor 5 is disposed between two adjacent N-type semiconductors 6. This design ensures that when electrons travel along the S-shaped circuit, they have the ability to jump between different energy levels between two connected metal junctions, thus ensuring that heat absorption or heating occurs.

[0033] In one embodiment, the end of the S-shaped circuit facing the current input direction of the power supply is set as the N-type semiconductor 6. This design is based on the principle that the direction of electron flow is opposite to the direction of current flow. Therefore, when current is input into the S-shaped circuit clockwise, electrons are input into the S-shaped circuit counterclockwise, and vice versa. Placing the N-type semiconductor 6 at the end facing the current input direction ensures that the P-type semiconductor 5 is positioned at the end facing the electron flow direction. This ensures that electrons circulate sequentially in the order of N+ semiconductor 7 → P-type semiconductor 5 → copper plate 4 → N-type semiconductor 6 → N+ semiconductor 7 → ... → N+ semiconductor 7, ultimately ensuring that the overall heat absorption process outweighs the heat release process.

[0034] In one embodiment, the semiconductor group has multiple semiconductors arranged in a rectangular array in the S-shaped circuit. The semiconductor group includes the copper plate 4 and P-type semiconductors 5 and N-type semiconductors 6 fixed at intervals on the bottom surface of the copper plate 4. The N+ type semiconductor 7 is horizontally connected between the bottom of the P-type semiconductor 5 / N-type semiconductor 6 and the N-type semiconductor 6 / P-type semiconductor 5 of two adjacent semiconductor groups. Based on the thermal effect of electron movement between metals at different energy levels, this design allows for the following: when electrons move from the N+ semiconductor 7 to the P-type semiconductor 5, heat is released; when electrons move from the P-type semiconductor 5 to the copper plate 4, heat is absorbed; when electrons move from the copper plate 4 to the N-type semiconductor 6, heat is absorbed; and when electrons move from the N-type semiconductor 6 to the N+ semiconductor 7, heat is absorbed. This completes the electron movement and heat absorption / release process within one semiconductor group. Essentially, the upper ceramic cover plate 3 exhibits heat absorption and cooling, while the lower ceramic cover plate 8 exhibits alternating heat absorption and release, neither cooling nor heating.

[0035] In one embodiment, the N+ type semiconductor 7 includes a straight-plate general-purpose component 701 and an L-shaped electrode component 702. Multiple general-purpose components 701 are used to horizontally connect two adjacent semiconductor groups, respectively. At least two electrode components 702 are used to connect the P-type semiconductor 5 or N-type semiconductor 6 in each semiconductor group located at the beginning and end of the S-shaped loop to a power supply terminal. This design, with its arrangement of multiple N+ type semiconductors 7 of different shapes, ensures the establishment of the S-shaped loop and optimizes the composition of the TEC assembly 2.

[0036] In one embodiment, one end of the lower ceramic cover plate 8 extends outward beyond the upper ceramic cover plate 3, and the two electrode elements 702 are respectively mirror-attached to this end of the lower ceramic cover plate 8 and respectively connected to the positive and negative poles of the power supply. This design facilitates the connection of the TEC assembly 2 to the power supply and the flow of current, enabling it to effectively utilize the thermal effect generated by electron movement between metals of different energy levels to absorb / release heat.

[0037] In one embodiment, the N+ type semiconductor 7 is the N-type semiconductor 6 containing a high concentration of phosphorus. Electrons in the N+ type semiconductor 7 are in a higher energy level, meaning they are more likely to lose electrons. This design achieves the goal of having a higher metal energy level than the P-type semiconductor 5, the copper plate 4, and the N-type semiconductor 6.

[0038] In one embodiment, the energy level relationship among the four metals—copper plate 4, P-type semiconductor 5, N-type semiconductor 6, and N+ type semiconductor 7—is as follows: P-type semiconductor 5 < copper plate 4 < N-type semiconductor 6 < N+ type semiconductor 7. This design, based on the thermal effect generated by the movement of electrons between metals at different energy levels, optimizes the composition of the TEC assembly 2, effectively making the TEC assembly 2 function as a cooling system. This improves the heat dissipation efficiency of the optical module 1 and saves on heat dissipation costs.

[0039] A method of using a high-efficiency heat dissipation optical module TEC device, comprising the high-efficiency heat dissipation optical module TEC device, the method comprising the following steps:

[0040] S1: Based on the principle that the direction of electron flow is opposite to the direction of current flow, when the current is input into the S-shaped circuit in a clockwise direction, the electrons are input into the S-shaped circuit in a counterclockwise direction. The direction of electron movement is as follows: N+ semiconductor 7 → P-type semiconductor 5 → copper plate 4 → N-type semiconductor 6 → N+ semiconductor 7 → ... → N+ semiconductor 7, and so on in a cyclical manner.

[0041] S2: Based on the thermal effect law of electron movement between metals at different energy levels: electrons need to absorb heat to move from a metal with a lower energy level to a metal with a higher energy level, and electrons release heat to move from a metal with a higher energy level to a metal with a lower energy level. Therefore, the heat release / absorption sequence of electrons in the S-shaped circuit is as follows: heat release → heat absorption → heat absorption → heat absorption → heat release → ... → heat absorption, cycling in this order. This is equivalent to the upper ceramic cover plate 3 exhibiting heat absorption and cooling as a whole, while the lower ceramic cover plate 8 exhibits alternating heat absorption and heat release, neither cooling nor heating. In summary, this is equivalent to the TEC assembly 2 exhibiting cooling as a whole.

[0042] It should be understood that the examples and embodiments described herein are for illustrative purposes only and are not intended to limit the invention. Those skilled in the art can make various modifications or changes based on them. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the invention should be included within the protection scope of the invention.

Claims

1. A high-efficiency heat dissipation optical module TEC device, relating to an optical module (1), characterized in that: The TEC assembly (2) is assembled in the optical module (1), and the TEC assembly (2) includes an upper ceramic cover plate (3), a lower ceramic cover plate (8), and one or more copper plates (4), a P-type semiconductor (5), an N-type semiconductor (6), and an N+ type semiconductor (7). Multiple P-type semiconductors (5) and multiple N-type semiconductors (6) are staggered and evenly spaced to form an S-shaped circuit. The copper plate (4) is horizontally positioned on top of the P-type semiconductors (5) and N-type semiconductors (6) to form a semiconductor group. The N+ type semiconductor (7) is horizontally positioned between two adjacent semiconductor groups. The upper ceramic cover plate (3) is horizontally positioned on top of the multiple copper plates (4), and the lower ceramic cover plate (8) is horizontally positioned at the bottom of the multiple N+ type semiconductors (7). In the S-type circuit, the end facing the current input direction of the power supply is set as the N-type semiconductor (6). The energy level relationship among the copper plate (4), P-type semiconductor (5), N-type semiconductor (6) and N+ type semiconductor (7) is as follows: P-type semiconductor (5) < copper plate (4) < N-type semiconductor (6) < N+ type semiconductor (7).

2. The high-efficiency heat dissipation optical module TEC device as described in claim 1, characterized in that: In the S-type circuit, an N-type semiconductor (6) is provided between two adjacent P-type semiconductors (5), and a P-type semiconductor (5) is provided between two adjacent N-type semiconductors (6).

3. The high-efficiency heat dissipation optical module TEC device as described in claim 1, characterized in that: The semiconductor group has multiple semiconductors arranged in a rectangular array in the S-shaped circuit. The semiconductor group includes the copper plate (4) and the P-type semiconductor (5) and N-type semiconductor (6) fixed at intervals on the bottom surface of the copper plate (4). The N+ type semiconductor (7) is horizontally connected between the bottom of the P-type semiconductor (5) / N-type semiconductor (6) and the N-type semiconductor (6) / P-type semiconductor (5) of two adjacent semiconductor groups.

4. The high-efficiency heat dissipation optical module TEC device as described in claim 1, characterized in that: The N+ type semiconductor (7) includes a straight plate-shaped general component (701) and an L-shaped electrode component (702). The general component (701) has multiple components, which are used to connect two adjacent semiconductor groups horizontally or vertically. The electrode component (702) has at least two components, which are used to connect the P-type semiconductor (5) or N-type semiconductor (6) in each semiconductor group located at the beginning and end of the S-type circuit to the power supply terminal.

5. The high-efficiency heat dissipation optical module TEC device as described in claim 4, characterized in that: One end of the lower ceramic cover plate (8) extends outward beyond the upper ceramic cover plate (3), and the two electrode components (702) are respectively mirror-fitted to this end of the lower ceramic cover plate (8) and respectively connected to the positive and negative poles of the power supply.

6. The high-efficiency heat dissipation optical module TEC device as described in claim 1, characterized in that: The N+ type semiconductor (7) is the N-type semiconductor (6) containing a high concentration of phosphorus. The electrons in the N+ type semiconductor (7) are in a higher energy level, which means they are more likely to lose electrons.

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