Method and apparatus for configuring a measurement map

Abstract

The application provides a measurement graph configuration method and device. A target detection mark is selected from an initial measurement position according to a preset rule to obtain a measurement graph. The determined measurement graph can meet the comprehensiveness of measurement and reduce the amount of measurement.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a method and apparatus for configuring a measurement pattern. Background Technology

[0002] To measure the overlay accuracy of different layers on a wafer, a full map measurement pattern can be designed. This pattern is used to measure all detection marks within all exposed areas on the wafer. However, measuring the entire map consumes a significant amount of measurement equipment time, leading to reduced throughput. Alternatively, a subset of detection marks can be randomly selected from different candidate measurement locations within multiple exposed areas on the wafer surface to form the measurement pattern. However, the selected measurement locations cannot cover all multiple exposed areas, affecting the comprehensiveness of the overlay accuracy measurement.

[0003] Therefore, how to determine a measurement map that satisfies the comprehensiveness of the measurement while reducing the amount of measurement is a technical problem that urgently needs to be solved in this field. Summary of the Invention

[0004] This application provides a method and apparatus for configuring a measurement pattern, used to determine the measurement pattern used when measuring the overlay accuracy of a wafer, so that the measurement pattern can both meet the requirements of comprehensive measurement and reduce the amount of measurement.

[0005] A first aspect of this application provides a method for configuring a measurement map, comprising: providing a wafer to be inspected; obtaining a first inspection result based on a first preset number of initial inspection marks on the wafer to be inspected; setting a second preset number of the initial inspection marks as target inspection marks using a preset rule, wherein the second preset number is less than the first preset number; obtaining a second inspection result based on the target inspection marks, such that the second inspection result matches the first inspection result; and setting a measurement map based on the target inspection marks.

[0006] In one embodiment, the wafer to be inspected includes a plurality of repeating exposure units; the initial detection mark is located within the exposure unit, and the positions of the initial detection marks in different exposure units correspond one-to-one.

[0007] In one embodiment, the preset rule includes: the sum of the number of target detection marks located at the same position in different exposure units is the same; or, the sum of the number of target detection marks located at any two positions in different exposure units differs by a first number threshold.

[0008] In one embodiment, the preset rule further includes: in the exposure units where the target detection mark exists, the sum of the number of target detection marks in any two exposure units is the same; or, in the exposure units where the target detection mark exists, the sum of the number of target detection marks in any two exposure units differs from a second quantity threshold.

[0009] In one embodiment, the preset rule further includes: the target detection markers include the two initial detection markers that are the longest distance apart within the exposure unit.

[0010] In one embodiment, the preset rule further includes: the target detection markers include the three initial detection markers that form the largest triangle area in the exposure unit.

[0011] In one embodiment, the step of obtaining a second detection result based on the target detection marker, such that the second detection result matches the first detection result, further includes: when the second detection result does not match the first detection result, resetting the number and / or position of the target detection marker according to the preset rule.

[0012] In one embodiment, providing a wafer to be tested and obtaining a first test result based on a first preset number of initial test marks on the wafer to be tested includes: obtaining a first test result based on all the initial test marks on the wafer to be tested.

[0013] In one embodiment, obtaining a second detection result based on the target detection mark, such that the second detection result matches the first detection result, includes: obtaining a second detection result based on the target detection mark, such that the second detection result differs from the first detection result by 0 to 1 nm.

[0014] A second aspect of this application provides a measurement pattern configuration apparatus, which can be used to execute the measurement pattern configuration method provided in the first aspect of this application. The apparatus includes: a first detection result acquisition module, configured to provide a wafer to be inspected and acquire a first detection result based on a first preset number of initial detection marks on the wafer to be inspected; a determination module, configured to set a second preset number of the initial detection marks as target detection marks using preset rules, wherein the second preset number is less than the first preset number; a second detection result acquisition module, configured to acquire a second detection result based on the target detection marks; a matching module, configured to match the second detection result with the first detection result; and a setting module, configured to set the measurement pattern based on the target detection marks.

[0015] In one embodiment, the wafer to be inspected includes a plurality of repeating exposure units; the initial detection mark is located within the exposure unit, and the positions of the initial detection marks in different exposure units correspond one-to-one.

[0016] In one embodiment, the preset rule includes: the sum of the number of target detection marks located at the same position in different exposure units is the same; or, the sum of the number of target detection marks located at any two positions in different exposure units differs by a first number threshold.

[0017] In one embodiment, the preset rule further includes: the sum of the number of target detection marks in any two exposure units is the same; or, the sum of the number of target detection marks in any two exposure units differs from a second quantity threshold.

[0018] In one embodiment, the preset rule further includes: the target detection markers include the two initial detection markers that are the longest distance apart within the exposure unit.

[0019] In one embodiment, the preset rule further includes: the target detection markers include the three initial detection markers that form the largest triangle area in the exposure unit.

[0020] In one embodiment, the determining module is further configured to, when the matching module determines that the second detection result does not match the first detection result, reset the number and / or position of the target detection markers according to the preset rules.

[0021] In one embodiment, the first detection result acquisition module is specifically used to acquire a first detection result based on all the initial detection marks on the wafer to be inspected.

[0022] In one embodiment, the matching module is specifically configured to make the second detection result differ from the first detection result by 0 to 1 nm.

[0023] The measurement pattern configuration method and apparatus provided in this application select target detection marks from the initial measurement position according to preset rules to obtain the measurement pattern. Compared with the full-pattern measurement pattern, the number of detection marks is less, which can reduce the amount of measurement required when measuring the overlay accuracy of wafers and improve the measurement efficiency of overlay accuracy. At the same time, since the selected target detection marks can be arranged relatively evenly and dispersedly on the wafer, they can better represent the measurement results of the full-pattern measurement pattern. The measurement pattern used for measuring the overlay accuracy of wafers determined in this application can satisfy the comprehensiveness of measurement while reducing the amount of measurement and increasing the capacity of measurement equipment. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 A flowchart illustrating a method for configuring a measurement map according to an embodiment of this application;

[0026] Figure 2 A measurement map of a first preset number of initial detection markers provided in an embodiment of this application;

[0027] Figure 3 A schematic diagram illustrating a preset rule provided in an embodiment of this application;

[0028] Figure 4 A schematic diagram of a preset rule provided in yet another embodiment of this application;

[0029] Figure 5 A schematic diagram illustrating a preset rule provided for another embodiment of this application;

[0030] Figure 6 A schematic diagram of a measurement diagram provided in an embodiment of this application;

[0031] Figure 7 This is a schematic diagram of a measurement diagram provided for another embodiment of this application. Detailed Implementation

[0032] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0033] The terms "first," "second," "third," "fourth," etc. (if present) in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented, for example, in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0034] This application provides a method and apparatus for configuring a measurement pattern, used to determine the measurement pattern used when measuring the overlay accuracy of a wafer. This ensures the measurement pattern satisfies both the comprehensiveness of the measurement and reduces the number of measurements, thereby increasing the productivity of the measurement equipment. The technical solution of this application is described in detail below with specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments.

[0035] Figure 1 A flowchart of a method for configuring a measurement map according to an embodiment of this application is shown below. Figure 1 The configuration method of the measurement map shown includes:

[0036] S101: Provide a wafer to be inspected, and obtain a first inspection result based on a first preset number of initial inspection marks on the wafer to be inspected.

[0037] Example, Figure 2 This is a measurement diagram of a first preset number of initial detection marks provided in an embodiment of this application. To perform comprehensive and accurate detection of the overlay accuracy of the wafer 10 to be inspected, all initial detection marks 201 on the wafer 10 to be inspected can be selected for measurement. For example, in Figure 2 In the measurement diagram shown, the wafer 10 to be inspected includes multiple repeating exposure units 20. The positions of the initial detection marks formed in each exposure unit 20 are identical, with a total of 16 initial detection marks set at its four vertices, the top midpoint, the bottom midpoint, and the center. For example, 16 initial detection marks can be designed on the photomask, corresponding to the 16 initial detection marks on the exposure unit 20. The wafer to be inspected is exposed using the photomask pattern, forming multiple repeating exposure units 20 on the wafer to be inspected, and the positions of the 16 initial detection marks in different exposure units 20 are identical.

[0038] The first preset number of initial detection marks may include initial detection marks 201 located on the wafer 10 under test by the exposure unit 20 located at the edge region of the wafer 10 under test, and all initial detection marks 201 located in the exposure unit 20 located in the inner region of the wafer 10 under test. The exposure unit 20 located at the edge region of the wafer 10 under test can be understood as an exposure unit intersecting with the edge of the wafer 10 under test, and only a part of the exposure unit 20 located at the edge region of the wafer 10 under test is located on the wafer 10 under test; the exposure unit 20 located in the inner region of the wafer 10 under test can be understood as the entire area of ​​the exposure unit 20 located on the wafer 10 under test.

[0039] In other examples, the first preset number of initial detection marks 201 may include only all the initial detection marks 201 located in the exposure unit 20 located in the inner region of the wafer to be inspected 10.

[0040] For example, a measuring machine can be used to measure the overlay accuracy based on a measurement map of a first preset number of initial detection marks, and obtain a first detection result. The first detection result can be used as matching information for subsequently determined measurement maps.

[0041] S102: Set a second preset number of initial detection markers as target detection markers using preset rules, wherein the second preset number is less than the first preset number.

[0042] For example, in S102, it can be obtained from, as Figure 2 In the initial detection markers of the full-map measurement map shown, a portion of the initial detection markers are selected as target detection markers using preset rules, and subsequent detection is performed using a smaller number of initial detection markers.

[0043] In some embodiments, the preset rules provided in this application include at least one or more of the following four rules (Rule 1-Rule 4). When the preset rules include multiple rules simultaneously, it should be understood that multiple rules are satisfied at the same time. The four rules are described below:

[0044] Rule 1: The sum of the number of target measurement marks at the same position in different exposure units is the same, or; the sum of the number of target detection marks at any two positions in different exposure units differs by a first quantity threshold.

[0045] Example, Figure 3This is a schematic diagram of a preset rule provided in an embodiment of this application. Among the multiple exposure units 20 corresponding to the wafer 10 to be inspected, five initial detection marks at initial detection positions are selected as target detection marks, located in exposure units 20 labeled ①, ②, ③, and ④, respectively. The five initial detection positions are located at the upper left corner A, upper right corner B, lower right corner C, lower left corner D, and center position E of the exposure unit 20. The sum of the number of target measurement marks located at the same position within different exposure units can be understood as the number of target detection marks located at the same position within the exposure unit. For example... Figure 3 As shown, the target detection marker at position A within different exposure units 20 is only found in exposure unit 20 labeled ①, therefore the sum of the target detection markers at position A within different exposure units 20 is 1; the target detection marker at position B within different exposure units 20 is only found in exposure unit 20 labeled ②, therefore the sum of the target detection markers at position B within different exposure units 20 is 1; the target detection marker at position C within different exposure units 20 is only found in exposure unit 20 labeled ③, therefore the sum of the target detection markers at position C within different exposure units 20 is 1; the target detection marker at position D within different exposure units 20 is only found in exposure unit 20 labeled ③, therefore the sum of the target detection markers at position D within different exposure units 20 is 1; the target detection marker at position E within different exposure units 20 is only found in exposure unit 20 labeled ④, therefore the sum of the target detection markers at position E within different exposure units 20 is 1. The sum of the number of target measurement marks located at position A in different exposure units, the sum of the number of target measurement marks located at position B in different exposure units, the sum of the number of target measurement marks located at position C in different exposure units, the sum of the number of target measurement marks located at position D in different exposure units, and the sum of the number of target measurement marks located at position E in different exposure units are all 1.

[0046] For example, when the initial detection mark A in the upper left corner of the exposure unit labeled ① is determined to be the target detection mark, the count A0 corresponding to the initial detection mark A is incremented by 1. When the initial detection mark B in the upper right corner of the exposure unit labeled ② is determined to be the target detection mark, the count B0 corresponding to the initial detection mark B is incremented by 1, and so on. After determining the second preset number of initial detection marks as target detection marks in all multiple exposure units, the sum of the number of target detection marks at each position can be obtained, denoted as A0, B0, C0, D0, and E0. Therefore, in order to obtain a more balanced measurement map, rule one requires that the sum of the number of each position A0, B0, C0, D0, and E0 be equal, for example, all of them being 10; or, it requires that the difference between the sum of the number of each position A0, B0, C0, D0, and E0 is less than a first quantity threshold. For example, the maximum difference between A0=10, B0=12, C0=10, D0=10, and E0=11 is 2, which is less than the first quantity threshold 3.

[0047] In some embodiments, the first rule can be characterized by a first weight. For example, when the difference between the sum of the quantities of different positions A0, B0, C0, D0 and E0 is greater than or equal to a first quantity threshold, the first weight is 0. Then, the selected initial detection mark is adjusted as the target detection mark according to rule one until the difference between A0, B0, C0, D0 and E0 is less than the first quantity threshold, and the first weight is 1. Then, it is determined that the selected target detection mark satisfies rule one.

[0048] Rule 2: In an exposure unit containing target detection markers, the number of target detection markers determined in each exposure unit should be the same or similar, such that the sum of the number of target detection markers in any two exposure units is the same, or that the sum of the number of target detection markers in any two exposure units differs from the second quantity threshold.

[0049] Similarly Figure 3The example shown illustrates this. When determining a second preset number of initial detection markers as target detection markers from multiple exposure units 20, the exposure unit labeled ① uses the one initial detection marker in its upper left corner as the target detection marker, and the number of exposure units labeled ① is recorded as ①-1. The exposure unit labeled ③ uses the two initial detection markers in its lower left and lower right corners as target detection markers, and the number of exposure units labeled ③ is recorded as ③-2, and so on. After determining all the second preset number of initial detection markers used as target detection markers in all multiple exposure units, the number of target detection markers in each exposure unit can be obtained: 1, 1, 2, 1... According to rule two, the number of target detection markers in each of the above exposure units must be the same, for example, all must be 1, or the number of target detection markers in each of the above exposure units must be similar, with the difference between the maximum value 2 and the minimum value 1 being less than the second quantity threshold 2.

[0050] In some embodiments, the second weight can be used to characterize the above rule two. For example, when it is determined that the number of target detection marks in multiple exposure units is not completely the same and the difference is greater than or equal to the second quantity threshold, the weight obtained is 0. Then, the selected initial detection mark is adjusted as the target detection mark according to rule two until the number of target detection marks in multiple exposure units is the same or the difference is less than the second quantity threshold, the weight obtained is 1, and then it is determined that the selected target detection mark satisfies rule two.

[0051] Rule 3: Target detection markers include the two initial detection markers with the longest distance within the exposure unit.

[0052] by Figure 4 As an example, Figure 4 This is a schematic diagram illustrating a preset rule provided in another embodiment of this application, wherein... Figure 4 Taking any exposure unit as an example, if the number of target detection markers selected in this exposure unit is greater than 2, then the target detection markers should be selected from the two initial detection markers with the longest distance. For example, suppose... Figure 4 Each exposure unit contains 5 initial detection markers (AEs). Figure 4 The left side of the diagram shows that if the initial detection markers D and E are used as target detection markers, and their distance is L1, then... Figure 4 The right side shows that if the initial detection markers B and D are used as target detection markers, their distance is L2 (since the exposure unit is rectangular, the distance between the initial detection markers A and C is also L2). It can be seen that... Figure 4 The two initial detection marks on the right side of the middle are the ones with the largest distance within the exposure unit. Therefore, when the exposure unit includes at least two target detection marks, the target detection marks should include the two initial detection marks B and D (or A and C) with the largest distance.

[0053] Rule 4: The target detection markers include the three initial detection markers in the exposure unit that form the triangle with the largest area.

[0054] by Figure 5 As an example, Figure 5 A schematic diagram of a preset rule provided for another embodiment of this application, wherein, Figure 5 Taking any exposure unit as an example, if the number of target detection markers selected in this exposure unit is greater than 3, then the target detection markers should be selected from the three initial detection markers that form the largest triangle area. For example, suppose... Figure 5 Each exposure unit contains 5 initial detection markers (AEs). Figure 5 The left side of the diagram shows that if the initial detection markers A, D, and E are used as target detection markers, the area of ​​the triangle is less than [a certain value]. Figure 5 The right side of the diagram shows that if the initial detection markers A, C, and D are taken as the area of ​​the triangle representing the target detection markers, it can be seen that... Figure 5 The three initial detection marks on the right side of the exposure unit have the largest area that can form a triangle. Therefore, when the exposure unit includes at least 3 target detection marks, the target detection marks should include the three initial detection marks A, C and D that have the largest area that can form a triangle.

[0055] Figure 6 This is a schematic diagram of the measurement pattern provided in the embodiments of this application, which shows some of the exposure units. It can be seen that each exposure unit includes a similar number of target detection marks. At the same time, the number of target measurement marks at the same position in multiple exposure units is the same or similar, and includes the two target measurement marks with the largest distance. This makes the determined target detection marks not concentrated in a certain area of ​​the wafer or exposure unit, but as uniform and dispersed as possible, so as to more comprehensively determine the overlay accuracy of the wafer to be tested.

[0056] S103: Based on the target detection mark obtained in S102, obtain the second detection result of the wafer to be detected, so that the second detection result matches the first detection result.

[0057] In some embodiments, the detection results include parameters such as the average value of the overlay accuracy of all target detection marks, the variance of the overlay accuracy of all target detection marks, or the sum of the average value and three times the variance (M3S) of the overlay accuracy of all target detection marks. Overlay accuracy may include offset values ​​in the X or Y direction. For example, the first detection result obtained in S101 based on the initial detection marks includes: average value in the X direction: 0.02, average value in the Y direction: 0.05, variance in the X direction: 1.5, variance in the Y direction: 1.5, M3S parameter in the X direction: 4.52, and M3S parameter in the Y direction: 4.55. The second detection result obtained in S103 based on the target detection marks includes: mean value in the X direction: 0.02, mean value in the Y direction: 0.02, variance in the X direction: 1.3, variance in the Y direction: 1.4, M3S parameter in the X direction: 3.92, and M3S parameter in the Y direction: 4.22.

[0058] After obtaining the first and second detection results, if the absolute difference of the value of each parameter between the first and second detection results is within the range of 0-1 nm, then the first and second detection results are considered to match, and subsequent steps can be executed. However, if the absolute difference of any parameter between the second and second detection results is greater than 1 nm, then the first and second detection results are considered to be mismatched, and step S102 needs to be re-executed to re-obtain the target detection marker. During the re-execution of S102, the number and / or position of the target detection marker can be reset, for example, adjusting the number of target detection units from 200 to 300, and then the target detection marker can be determined again based on the execution of S102.

[0059] In other examples, if any one or more parameters between the first and second detection results match, it can also be determined that the first and second detection results match, and subsequent steps can be performed. For example, if the absolute difference of the M3S between the first and second detection results is within the range of 0-1 nm, it is determined that the first and second detection results match, and subsequent steps can be performed.

[0060] S104: Set the measurement map according to the target detection marker.

[0061] For example, if the second detection result obtained from the target detection mark determined in S103 matches the first detection result obtained from the full-view measurement map in S101, it indicates that when using the target detection mark to perform overlay accuracy inspection on the wafer to be inspected, a measurement result similar to that when performing overlay accuracy inspection on the full-view measurement map can be achieved. Therefore, the target detection mark determined in S102 can be used as the measurement map when performing overlay accuracy inspection on subsequent wafers.

[0062] The measurement pattern set in the embodiments of this application is based on target detection marks. Compared with a full-map measurement pattern, it has fewer detection marks, which reduces the amount of measurement required when measuring the overlay accuracy of a wafer and improves the measurement efficiency of overlay accuracy. Furthermore, since the selected target detection marks are more uniformly and dispersedly distributed within the wafer or exposure unit, the overlay accuracy of the wafer can be measured more comprehensively at the same time. Therefore, the measurement pattern used in the embodiments of this application for measuring the overlay accuracy of a wafer satisfies both the comprehensiveness of the measurement and the reduction of quantity measurement, thereby improving the measurement efficiency of overlay accuracy.

[0063] In some embodiments, Figure 7 This is a schematic diagram of a measurement diagram provided in another embodiment of this application. Figure 7 The diagram shows a measurement map composed of target detection markers obtained by the measurement map configuration method provided in the embodiments of this application. It can be seen that... Figure 7 The measurement diagram shown and Figure 2 Compared to the measurement diagram shown, it can reduce the amount of measurement required when inspecting the overlay accuracy of wafers, improve the measurement efficiency of overlay accuracy, and also measure the overlay accuracy of wafers more comprehensively at the same time.

[0064] In the foregoing embodiments, the configuration method of the measurement map provided in this application has been described. To implement the functions of the methods provided in the embodiments of this application, these functions can be implemented by an electronic device of the executing entity. For example, it can include a hardware structure and / or software modules, implementing the functions in the form of a hardware structure, a software module, or a hardware structure plus a software module. Whether a particular function is implemented in the form of a hardware structure, a software module, or a hardware structure plus a software module depends on the specific application and design constraints of the technical solution.

[0065] This application embodiment also provides a measurement pattern configuration device, comprising: a first detection result acquisition module, a determination module, a second detection result acquisition module, a matching module, and a setting module. The first detection result acquisition module is used to provide a wafer to be inspected and acquire a first detection result based on a first preset number of initial detection marks on the wafer. The determination module is used to set a second preset number of the initial detection marks as target detection marks using preset rules, wherein the second preset number is less than the first preset number. The second detection result acquisition module is used to acquire a second detection result based on the target detection marks. The matching module is used to match the second detection result with the first detection result. The setting module is used to set a measurement pattern based on the target detection marks. The specific principles and implementation methods of the above steps performed by each module in the measurement pattern configuration device can be referred to the measurement pattern configuration method in the foregoing embodiments of this application, and will not be repeated here.

[0066] It should be noted that the division of the various modules in the above device is merely a logical functional division. In actual implementation, they can be fully or partially integrated into a single physical entity, or they can be physically separated. These modules can be implemented entirely in software via processing element calls; they can be fully implemented in hardware; or some modules can be implemented by processing element calls to software, while others are implemented in hardware. They can be separate processing elements, integrated into a chip within the device, or stored as program code in the device's memory, invoked and executed by a processing element. The implementation of other modules is similar. Furthermore, these modules can be fully or partially integrated together, or implemented independently. The processing element described here can be an integrated circuit with signal processing capabilities. In the implementation process, each step of the above method or each of the above modules can be completed through integrated logic circuits in the hardware of the processor element or through software instructions.

[0067] For example, these modules can be one or more integrated circuits configured to implement the above methods, such as one or more application-specific integrated circuits (ASICs), one or more digital signal processors (DSPs), or one or more field-programmable gate arrays (FPGAs). As another example, when a module is implemented using processing element scheduler code, the processing element can be a general-purpose processor, such as a central processing unit (CPU) or other processor capable of calling program code. Furthermore, these modules can be integrated together to implement a system-on-a-chip (SOC).

[0068] In the above embodiments, implementation can be achieved entirely or partially through software, hardware, firmware, or any combination thereof. When implemented using software, it can be implemented entirely or partially in the form of a computer program product. The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, all or part of the processes or functions described in the embodiments of this application are generated. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions can be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another. For example, the computer instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center via wired (e.g., coaxial cable, fiber optic, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) means. The computer-readable storage medium can be any available medium that a computer can access or a data storage device such as a server or data center that integrates one or more available media. The available medium can be a magnetic medium (e.g., floppy disk, hard disk, magnetic tape), an optical medium (e.g., DVD), or a semiconductor medium (e.g., solid-state disk (SSD)).

[0069] This application also provides an electronic device, including: a processor and a memory; wherein the memory stores a computer program, and when the processor executes the computer program, the processor can be used to execute a configuration method for a measurement map as described in any of the foregoing embodiments of this application.

[0070] This application also provides a computer-readable storage medium storing a computer program, which, when executed, can be used to perform a method for configuring a measurement map as described in any of the foregoing embodiments of this application.

[0071] This application also provides a chip for executing instructions, the chip being used to execute a measurement pattern configuration method executed by an electronic device as described in any of the foregoing embodiments of this application.

[0072] Those skilled in the art will understand that all or part of the steps of the above-described method embodiments can be implemented by hardware related to program instructions. The aforementioned program can be stored in a computer-readable storage medium. When executed, the program performs the steps of the above-described method embodiments; and the aforementioned storage medium includes various media capable of storing program code, such as ROM, RAM, magnetic disks, or optical disks.

[0073] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A method of configuring a measurement map, characterized by, The method comprises the following steps: providing a wafer to be detected, and obtaining a first detection result according to a first preset number of initial detection marks on the wafer to be detected; setting a second preset number of the initial detection marks as target detection marks according to a preset rule, the second preset number being less than the first preset number; obtaining a second detection result according to the target detection marks, so that the second detection result matches the first detection result; setting a measurement map according to the target detection marks; wherein the step of obtaining the second detection result according to the target detection marks, so that the second detection result matches the first detection result, further comprises: when the second detection result does not match the first detection result, resetting the number and / or position of the target detection marks according to the preset rule.

2. The configuration method according to claim 1, wherein: the wafer to be detected comprises a plurality of repeated exposure units; the initial detection marks are located in the exposure units, and the positions of the initial detection marks in different exposure units correspond to each other.

3. The configuration method of claim 2, wherein, the preset rule comprises: the sum of the number of the target detection marks at the same position in different exposure units is the same; or, the sum of the number of the target detection marks at any two positions in different exposure units differs by a first number threshold.

4. The configuration method of claim 3, wherein, the preset rule further comprises: in the exposure units where the target detection marks exist, the sum of the number of the target detection marks in any two exposure units is the same; or, in the exposure units where the target detection marks exist, the sum of the number of the target detection marks in any two exposure units differs by a second number threshold.

5. The configuration method according to claim 3 or 4, characterized in that, the preset rule further comprises: the target detection marks comprise the two initial detection marks farthest apart in the exposure unit.

6. The configuration method of claim 5, wherein, the preset rule further comprises: the target detection marks comprise the three initial detection marks forming the largest triangular area in the exposure unit.

7. The configuration method according to claim 1, wherein: the step of providing a wafer to be detected, and obtaining a first detection result according to a first preset number of initial detection marks on the wafer to be detected, comprises: obtaining a first detection result according to all the initial detection marks on the wafer to be detected.

8. The configuration method according to claim 1, wherein: the step of obtaining a second detection result according to the target detection marks, so that the second detection result matches the first detection result, comprises: obtaining a second detection result according to the target detection marks, so that the second detection result differs from the first detection result by 0-1 nm.

9. A measuring chart configuration apparatus characterized by comprising: The method comprises the following steps: a first detection result obtaining module is configured to provide a wafer to be detected, and obtain a first detection result according to a first preset number of initial detection marks on the wafer to be detected; a determination module is configured to set a second preset number of the initial detection marks as target detection marks according to a preset rule, the second preset number being less than the first preset number; a second detection result obtaining module is configured to obtain a second detection result according to the target detection marks; a matching module, configured to match the second detection result with the first detection result; a setting module, configured to set a measurement graph according to the target detection mark; wherein the determining module is further configured to reset the number and / or position of the target detection mark according to the preset rule when the matching module determines that the second detection result does not match the first detection result.

10. The configuration apparatus of claim 9, wherein, the wafer to be detected comprises a plurality of repeated exposure units; the initial detection marks are located in the exposure units, and the positions of the initial detection marks in different exposure units correspond to each other.

11. The configuration apparatus according to claim 10, wherein the preset rule comprises: the sum of the number of the target detection marks at the same position in different exposure units is the same; or, the sum of the number of the target detection marks at any two positions in different exposure units differs by a first number threshold.

12. The configuration apparatus according to claim 11, characterized by the preset rule further comprises: the sum of the number of the target detection marks in any two exposure units is the same; or, the sum of the number of the target detection marks in any two exposure units differs by a second number threshold.

13. The configuration device according to claim 11 or 12, characterized in that, the preset rule further comprises: the target detection mark comprises two initial detection marks in the exposure unit farthest apart.

14. The configuration apparatus according to claim 13, characterized by the preset rule further comprises: the target detection mark comprises three initial detection marks in the exposure unit forming the largest triangular area.

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